JPH1129612A - High polymeric compound introduced with functional group having unshared electron pair in terminal, its production and positive-type resist material using the same high polymeric compound - Google Patents

High polymeric compound introduced with functional group having unshared electron pair in terminal, its production and positive-type resist material using the same high polymeric compound

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Publication number
JPH1129612A
JPH1129612A JP18687297A JP18687297A JPH1129612A JP H1129612 A JPH1129612 A JP H1129612A JP 18687297 A JP18687297 A JP 18687297A JP 18687297 A JP18687297 A JP 18687297A JP H1129612 A JPH1129612 A JP H1129612A
Authority
JP
Japan
Prior art keywords
compound
polymer
terminal
electron pair
unshared electron
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP18687297A
Other languages
Japanese (ja)
Other versions
JP3536194B2 (en
Inventor
Masao Kato
政雄 加藤
Yukio Nagasaki
幸夫 長崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Science and Technology Agency
Original Assignee
Research Development Corp of Japan
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Priority to JP18687297A priority Critical patent/JP3536194B2/en
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Publication of JP3536194B2 publication Critical patent/JP3536194B2/en
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Expired - Fee Related legal-status Critical Current

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Abstract

PROBLEM TO BE SOLVED: To obtain the new subject compound useful as positive type resist materials for visible light, ultraviolet light, electron beam and X ray. SOLUTION: The subject compound is a compound expressed by formula I [R is an initiator fragment; R1 is H, an organosilyl, etc.; R2 to R4 are each H, a 1-10C alkyl, etc.; X is a substituent having unshared electron pair such as 0, N, S, etc.; (n) is 5-10000], e.g. a compound of formula II. The compound of formula I is obtained by ionically polymerizing a vinyl monomer (e.g. α- methylstyrene, etc.), in the presence of 0.001-1 times molar of an organometal- based initiator (e.g. butyllithium, sodiumnaphthalene, etc.), then, adding or condensing a ketone, an imine, carbon disulfide, a halomethyl ether, a halomethyl sulfide preferably in the presence of 0.5-100 times based on the amount of the monomer of an inert solvent (e.g. tetrahydrofuran, etc.), at -100-0 deg.C for 10 minutes -100 hours to introduce functional groups each having an unshared electron pair through one carbon atom to the terminal quaternary carbon in the main chain of the polymer.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、ビニルモノマーを
有機金属系開始剤の存在下でイオン重合した後、ケト
ン、イミン、2硫化炭素、ハロメチルエーテル、ハロメ
チルスルフィドを付加或いは縮合させたポリマー主鎖の
末端4級炭素に炭素原子1つを介して非共有電子対を有
する官能基を導入した新規な高分子化合物、その製造方
法及び該化合物を用いたポジ型レジスト材料に関するも
のである。
The present invention relates to a polymer obtained by ion-polymerizing a vinyl monomer in the presence of an organometallic initiator and then adding or condensing a ketone, imine, carbon disulfide, halomethyl ether, or halomethyl sulfide. The present invention relates to a novel polymer compound in which a functional group having an unshared electron pair is introduced into the terminal quaternary carbon of the main chain via one carbon atom, a method for producing the same, and a positive resist material using the compound.

【0002】[0002]

【従来技術】従来より高分子化合物の末端に不飽和基を
導入する方法はマクロモノマー合成法として広く試みら
れてきた(山下雄也編著、マクロモノマーの化学と工
業、アイピーシー出版部、1987年)しかしながらそ
れらの多くはブロックポリマーやグラフトポリマーの前
駆体として合成されてきているのが現状である。したが
って、マクロモノマーとして得られているポリマーの多
くは光や電子線などによって重合反応を示す。本発明者
らは光や電子線等の照射によって効率的に反応活性を示
し、生じた活性種が生長鎖と同様な構造を有することに
より解重合せしめ、効率的に解重合するポジ型レジスト
を目指し、検討を重ねた。一般にビニルモノマーのカチ
オン重合反応では連鎖移動反応(プロトン移動)により
一部構造式(C)に示すポリマーが生成しているもの
の、定量的にこれら不飽和末端を導入する方法として
は、本発明者らの出願である特願平6−228039号
(特開平8−92312号公報)に記載の製造方法によ
って高収率で定量的に末端に2−フェニルアリル末端構
造を導入することに成功した例があるだけである。特に
繰り返し骨格にα−メチルスチレンを有するポリマーは
電子線照射等により効率的に末端から解重合が進行し、
効率的なポジ型電子線レジストを供給する。ポリ(α−
メチルスチレン)を主鎖骨格とするレジストはそのポリ
マー自身の摂動性の低さから、極めて高い解像性能を有
するものの、2−フェニルアリル末端にたいする電子線
の感受性は必ずしも高いものではなかった。
2. Description of the Related Art Conventionally, a method of introducing an unsaturated group into a terminal of a polymer compound has been widely attempted as a method for synthesizing a macromonomer (edited by Yuya Yamashita, Chemistry and Industry of Macromonomer, IPC Publishing, 1987). However, at present, most of them have been synthesized as precursors of block polymers and graft polymers. Therefore, most of the polymers obtained as macromonomers show a polymerization reaction by light or electron beam. The present inventors have shown a positive resist that efficiently exhibits a reaction activity by irradiation with light or an electron beam, depolymerizes the resulting active species by having the same structure as a growing chain, and efficiently depolymerizes. Aimed and studied repeatedly. In general, in the cationic polymerization reaction of a vinyl monomer, a polymer represented by the structural formula (C) is partially generated by a chain transfer reaction (proton transfer). Example in which the 2-phenylallyl terminal structure was successfully introduced into the terminal quantitatively in high yield by the production method described in Japanese Patent Application No. 6-228039 (Japanese Patent Application Laid-Open No. 8-92312). There is only. In particular, a polymer having α-methylstyrene in the repeating skeleton efficiently undergoes depolymerization from the end by electron beam irradiation or the like,
Provide efficient positive electron beam resist. Poly (α-
A resist having (methylstyrene) as the main chain skeleton has extremely high resolution performance due to the low perturbation of the polymer itself, but the sensitivity of the electron beam to the 2-phenylallyl terminal is not always high.

【0003】[0003]

【化5】 Embedded image

【0004】[0004]

【発明が解決しようとする課題】そこで、本発明者ら
は、電子線などに対する感受性を改善すべく、α−メチ
ルスチレンなどのビニルモノマーを有機金属開始剤を用
いて重合して得られるポリマーの末端の電子線感受性を
向上させる技術について鋭意検討を重ねた結果、ポリマ
ー主鎖の末端4級炭素に炭素原子1つを介して非共有電
子対を有する官能基を導入することにより、高効率で電
子線などにより分解できる高分子化合物が得られること
を発見し、本発明を完成したもので、本発明の目的は、
電子線などの感受性を改善した構造式(A)を有する高
分子化合物、その製造方法及び構造式(A)の化合物を
用いた電子線などのレジスト材料を提供することであ
る。
Accordingly, the present inventors have developed a polymer obtained by polymerizing a vinyl monomer such as α-methylstyrene using an organometallic initiator in order to improve the sensitivity to an electron beam or the like. As a result of intensive studies on the technology for improving the electron beam sensitivity at the terminal, the introduction of a functional group having an unshared electron pair via one carbon atom into the terminal quaternary carbon of the polymer main chain provides high efficiency. It has been discovered that a polymer compound that can be decomposed by an electron beam or the like can be obtained, and the present invention has been completed.
An object of the present invention is to provide a polymer compound having the structural formula (A) having improved sensitivity to an electron beam, a method for producing the same, and a resist material such as an electron beam using the compound of the structural formula (A).

【0005】[0005]

【課題を解決するための手段】請求項1に係る発明の要
旨は、下記の構造式(A)で表される、ポリマー主鎖の
末端4級炭素に炭素原子1つを介して非共有電子対を有
する官能基を導入した高分子化合物であり、請求項3に
係る発明は、構造式(A)を持つポリマーの製造方法で
あり、請求項3に係る発明は構造式(A)を持つポリマ
ーを用いた電子線などのレジスト材料である。本発明の
化合物(A)は、ブチルリチュウムやナトリウウムナフ
タレンのような有機金属を開始剤としたビニルモノマー
のアニオン重合で得られたリビングアニオン末端にケト
ン、イミン、2硫化炭素、ハロメチルエーテル、ハロメ
チルスルフィド等を付加或いは縮合して末端を修飾する
ことにより合成される。この合成過程の末端の修飾過程
を有機リチュウム開始剤として用い、修飾剤をアセトン
とした場合を化学式で示すと、ポリマーの末端炭素にリ
チュウムを有するポリマーをアセトンで修飾する反応は
次のとおりである。
The gist of the invention according to claim 1 is that the terminal quaternary carbon of the polymer main chain represented by the following structural formula (A) has a lone electron via one carbon atom. The invention according to claim 3 is a method for producing a polymer having a structural formula (A), and the invention according to claim 3 is a polymer compound having a structural group (A). It is a resist material such as an electron beam using a polymer. The compound (A) of the present invention comprises a ketone, an imine, carbon disulfide, a halomethyl ether, a living anion terminal obtained by anionic polymerization of a vinyl monomer using an organic metal such as butyllithium or sodium naphthalene as an initiator. It is synthesized by adding or condensing halomethyl sulfide or the like to modify the terminal. When the modification process of the terminal of this synthesis process is used as an organic lithium initiator and acetone is used as a modifier, the reaction for modifying a polymer having lithium at the terminal carbon of the polymer with acetone is as follows. .

【0006】[0006]

【化6】 Embedded image

【0007】この反応に使用されるモノマー類は、リビ
ング的にアニオン重合するモノマーならば何れも可能で
あるが、特にα−メチルスチレン類(有機シリル基、有
機シロキシ基で置換していてもよい)が好ましい。その
他のモノマーとしてはスチレン、イソプレン、ブタジェ
ン等の共役炭化水素モノマーやエチレン、アクリル酸エ
ステル、ジアルキルアクリルアミド、ビニルケトンなど
の共役極性モノマー類を挙げることができる。
As the monomers used in this reaction, any monomers can be used as long as they are capable of anionic polymerization in a living manner. In particular, α-methylstyrenes (which may be substituted with an organic silyl group or an organic siloxy group). Is preferred. Other monomers include conjugated hydrocarbon monomers such as styrene, isoprene and butadiene, and conjugated polar monomers such as ethylene, acrylate, dialkylacrylamide and vinyl ketone.

【0008】この反応に使用され有機金属系開始剤はメ
チルリチュウム、ブチルリチュウムなどの有機リチュウ
ム、ナトリウムナフタレン、カリウムナフタレン、クミ
ルナフタレン、クミルカリウムなどの有機ナトリウウム
や有機カリウム、リチュウムジイソプロピルアミドやカ
リウムジイソプロピルアミドなどの有機金属アミド類な
どが用いられる。また、α−メチルスチレンリビングオ
リゴマーなども使用できる。これらの開始剤の使用量
は、モノマーに対するモル比で0.00001ないし1
00倍モルで使用可能であり、0.001倍ないし1倍
モルがより好ましい。
The organometallic initiators used in this reaction are organic lithium such as methyllithium and butyllithium, organic sodium and organic potassium such as sodium naphthalene, potassium naphthalene, cumylnaphthalene and cumylpotassium, lithium diisopropylamide and potassium diisopropylamide. And the like are used. Also, α-methylstyrene living oligomers and the like can be used. These initiators are used in a molar ratio of 0.00001 to 1 relative to the monomer.
It can be used in a molar amount of 00 times, and more preferably 0.001 to 1 times.

【0009】この反応で用いられる末端修飾剤はアセト
ン、メチルエチルケトン、アセトフェノン等のケトン
類、ベンザルアニリン等のイミン類、2硫化炭素、クロ
ロメチルメチルエーテル、ブロモメチルメチルエーテ
ル、クロロメチルフェニルスルフィド、N,O−ビス
(トリメチルシリル)アセトアミド、2−ブロモテトラ
ヒドロフランなどのハロゲン化物などを挙げることがで
きる。これら末端修飾剤の生成ポリマーに対するモル比
は0.01ないし100倍モルで使用可能であり、1倍
モルないし10倍モルがより好ましい。
The terminal modifier used in this reaction includes ketones such as acetone, methyl ethyl ketone and acetophenone, imines such as benzalaniline, carbon disulfide, chloromethyl methyl ether, bromomethyl methyl ether, chloromethyl phenyl sulfide, N , O-bis (trimethylsilyl) acetamide, halides such as 2-bromotetrahydrofuran, and the like. The molar ratio of these terminal modifiers to the resulting polymer can be from 0.01 to 100 moles, preferably from 1 mole to 10 moles.

【0010】本発明の反応は、不活性溶媒の存在下で行
なうこともできる。溶媒としてはジエチルエーテル、ジ
オキサン、テトラヒドロフラン、ジメトキシエタン、ジ
グライム等のエーテル類、ペンタン、ヘキサン、シクロ
ヘキサン、オクタン等の脂肪族炭化水素、ベンゼン、ト
ルエン等の芳香族炭化水素ジメチルスルホキシド、N,
N−ジメチルホルムアミド、ヘキサメチルホスホリック
トリアミド、等の非プロトン性極性溶媒、反応条件下で
アルカリ金属アミド触媒と反応しない液体を用いること
ができる。この中でテトラヒドロフラン等のエーテル類
位、ベンゼン等の芳香族炭化水素類およびヘキサン等の
脂肪族炭化水素が好ましい。
[0010] The reaction of the present invention can also be carried out in the presence of an inert solvent. Examples of the solvent include ethers such as diethyl ether, dioxane, tetrahydrofuran, dimethoxyethane and diglyme; aliphatic hydrocarbons such as pentane, hexane, cyclohexane and octane; aromatic hydrocarbons such as benzene and toluene; dimethyl sulfoxide;
An aprotic polar solvent such as N-dimethylformamide and hexamethylphosphoric triamide, and a liquid that does not react with the alkali metal amide catalyst under the reaction conditions can be used. Of these, preferred are ethers such as tetrahydrofuran, aromatic hydrocarbons such as benzene, and aliphatic hydrocarbons such as hexane.

【0011】用いる溶媒の量は体積でモノマーの0.1
ないし1000倍量が好ましく、より好ましくは0.5
ないし100倍量である。溶媒の相対量が多くなると反
応は一般に遅くなる。本発明において反応を行う温度に
ついては特に制限はないが、−150℃ないし150℃
が好ましく、より好ましくは−100℃ないし0℃であ
る。また反応時間に制限はないが1分ないし1000時
間が好ましく、更に好ましくは10分ないし100時間
である。反応条件、目的物によって反応速度が異なるの
で、ガスクロマトグラフィーや液体クロマトグラフィー
等で原料や生成物の定量を行い反応の終了を決定するこ
とが望ましい。
The amount of solvent used is 0.1% by volume of the monomer.
To 1000 times the amount, more preferably 0.5 times
Or 100 times the amount. The reaction generally slows down as the relative amount of solvent increases. The temperature at which the reaction is carried out in the present invention is not particularly limited, but is -150 ° C to 150 ° C.
And more preferably -100 ° C to 0 ° C. The reaction time is not limited, but is preferably 1 minute to 1000 hours, more preferably 10 minutes to 100 hours. Since the reaction rate varies depending on the reaction conditions and the target substance, it is desirable to determine the end of the reaction by quantifying the raw materials and products by gas chromatography, liquid chromatography, or the like.

【0012】本発明で得られる化合物(A)の高分子化
合物は、末端に紫外光、電子線などに感受性の高い官能
基を持つため、紫外光、電子線等により効率よく解重合
する。その解重合の過程は次のとおりである。
Since the high molecular compound of the compound (A) obtained in the present invention has a functional group which is highly sensitive to ultraviolet light, electron beam and the like at the terminal, it is efficiently depolymerized by ultraviolet light and electron beam. The depolymerization process is as follows.

【0013】[0013]

【化7】 Embedded image

【0014】すなわち、構造式(A)の高分子化合物は
紫外線、電子線により照射部分は全てモノマーに解重合
して可溶性になるので新規な高感度ポジ型レジスト材料
として使用できる。したがって、上記化合物(A)を用
いてレジスト膜を形成するには、上記化合物(A)を溶
媒に溶解させ、スピナー等で薄膜形成させることによっ
て得られる。その際使用する溶媒としては、ジエチルエ
ーテル、ジオキサン、テトラヒドルフラン、ジメトキシ
エタン、ジグライム等のエーテル類、ペンタン、ヘキサ
ン、シクロヘキサン、オクタン等の脂肪族炭化水素、ベ
ンゼン、トルエン等の芳香族炭化水素、ジメチルスルホ
キシド、N,N−ジメチルホルムアミド、ヘキサメルホ
スホリックトリアミド等の非プロトン性極性溶媒等の化
合物(A)を溶解せしめる液体を用いることができる。
溶媒の濃度は体積で化合物(A)の0.1ないし100
0倍が好ましく、より好ましくは1ないし20倍量であ
る。溶媒の相対量が多くなると一般に膜は薄くなる。
That is, the polymer compound of the structural formula (A) can be used as a novel high-sensitivity positive resist material because all the portions irradiated with ultraviolet rays and electron beams are depolymerized into monomers and become soluble. Therefore, formation of a resist film using the above compound (A) can be obtained by dissolving the above compound (A) in a solvent and forming a thin film with a spinner or the like. As the solvent used at that time, ethers such as diethyl ether, dioxane, tetrahydrofuran, dimethoxyethane, diglyme, pentane, hexane, cyclohexane, aliphatic hydrocarbons such as octane, benzene, aromatic hydrocarbons such as toluene, A liquid capable of dissolving the compound (A) such as an aprotic polar solvent such as dimethyl sulfoxide, N, N-dimethylformamide, and hexamerphosphoric triamide can be used.
The concentration of the solvent is 0.1 to 100 by volume of the compound (A).
It is preferably 0 times, more preferably 1 to 20 times. As the relative amount of solvent increases, the membrane generally becomes thinner.

【0015】得られた膜は可視光や紫外光、電子線、X
線などの照射により容易に解重合し、パターンを形成す
る。現像に用いる溶媒は水、メタノール、エタノール、
プロパノールなどのアルコール類、メチルエチルケトン
等のケトン類、ベンゼンやトルエン等の炭化水素類など
が用いられる。また、真空下で電子線、X線等を照射す
る場合は、現像剤を用いなくてもパターンが得られる。
The obtained film is made of visible light, ultraviolet light, electron beam, X-ray,
It is easily depolymerized by irradiation with a line or the like to form a pattern. Solvents used for development are water, methanol, ethanol,
Alcohols such as propanol, ketones such as methyl ethyl ketone, and hydrocarbons such as benzene and toluene are used. When irradiating electron beams, X-rays or the like under vacuum, a pattern can be obtained without using a developer.

【0016】[0016]

【実施例】以下、実施例により本発明を更に説明する
が、これらの実施例は本発明の範囲を何ら限定するもの
ではない。 実施例1 構造式(D)のサンプル1の合成
The present invention will be further described below with reference to examples, but these examples do not limit the scope of the present invention in any way. Example 1 Synthesis of Sample 1 of Structural Formula (D)

【0017】[0017]

【化8】 Embedded image

【0018】反応容器内をアルゴン置換し、−78℃
下、テトラヒドロフラン8.2ml、sec−ブチルリ
チュウムのヘキサン溶液0.34ml及びα−メチルス
チレン1.3mlを加え30分間重合させる。この溶媒
にアセトン2mlを加え、さらに3分間反応させた。こ
の溶媒を大過剰のメタノールに添加し、ポリマーを得
た。ポリマーは定量的に得られた。ゲルパーミエーショ
ンクロマトグラフィー(GPC)から求めた分子量及び
分子量分布はそれぞれ5000及び1.08であった。
The inside of the reaction vessel was purged with argon, and was cooled to -78 ° C.
Below, 8.2 ml of tetrahydrofuran, 0.34 ml of a hexane solution of sec-butyllithium and 1.3 ml of α-methylstyrene are added, and polymerization is carried out for 30 minutes. 2 ml of acetone was added to this solvent, and the mixture was further reacted for 3 minutes. This solvent was added to a large excess of methanol to obtain a polymer. The polymer was obtained quantitatively. The molecular weight and molecular weight distribution determined by gel permeation chromatography (GPC) were 5000 and 1.08, respectively.

【0019】実施例2 構造式(E)のサンプル2の合成Example 2 Synthesis of Sample 2 of Structural Formula (E)

【0020】[0020]

【化9】 Embedded image

【0021】アセトンの代わりにベンザルアニリン1g
のテトラヒドロフラン(THF)溶液3mlを用いるこ
と以外、実施例1と全く同様の条件でポリマーを合成し
た。ゲルパーミエーションクロマトグラフィー(GP
C)から求めた分子量及び分子量分布はそれぞれ500
0及び1.08であった。
1 g of benzalaniline instead of acetone
A polymer was synthesized under exactly the same conditions as in Example 1, except that 3 ml of a tetrahydrofuran (THF) solution was used. Gel permeation chromatography (GP
The molecular weight and the molecular weight distribution obtained from C) were 500
0 and 1.08.

【0022】前記サンプル1、2のレジストとしての特
性 実施例3 実施例1で得られたサンプル1の10%トルエン溶液を
スピンコートして0.5μmに製膜し、走査電子顕微鏡
にて20Kevで電子線照射を行った。40%メタノー
ル含有メチルエチルケトンで現像し、感度特性曲線(図
1)を求めたところ、50%残存膜厚時における電子線
照射強度は35μC/cm2、その傾き(γ)は4.0
であった。
Characteristics of Samples 1 and 2 as Resist Example 3 A 10% toluene solution of Sample 1 obtained in Example 1 was spin-coated to form a film having a thickness of 0.5 μm, and the film was formed with a scanning electron microscope at 20 Kev. Electron beam irradiation was performed. Developing with methyl ethyl ketone containing 40% methanol and determining the sensitivity characteristic curve (FIG. 1), the electron beam irradiation intensity at the time of 50% residual film thickness was 35 μC / cm 2, and the slope (γ) was 4.0.
Met.

【0023】実施例4 実施例2で得られたサンプル2を用いたこと以外実施例
3と全く同様に電子線描画特性を検討した。図2の感度
特性曲線より、50%残存膜厚時における電子線照射強
度は3μC/cm2、その傾き(γ)は4.0であっ
た。
Example 4 An electron beam writing characteristic was examined in exactly the same manner as in Example 3 except that the sample 2 obtained in Example 2 was used. From the sensitivity characteristic curve of FIG. 2, the electron beam irradiation intensity at the time of 50% residual film thickness was 3 μC / cm 2, and the slope (γ) thereof was 4.0.

【0024】[0024]

【発明の効果】主鎖に4級炭素を有するビニルポリマー
は天井温度が低く、光や電子線に対して分解性を示すこ
とが知られているが、同時に架橋反応が併発し、必ずし
もポジ型レジストとして高い性能を示していない。ここ
で本発明のように定量的に炭素原子1つを介してポリマ
ー主鎖の末端4級炭素に非共有電子対を有する官能基を
導入することによって、高効率で電子線に対して応答
し、その末端から定量的に分解が進行する系が達成でき
る。さらに、ポリ(α−メチルスチレン)の様にガラス
転移点が高く、分子の摂動が抑制される系でなおかつ分
子量分布が低いため、そのような系においては解像度が
極めて高く、高次の微細加工技術を必要とする半導体分
野で有用な材料となる。
The vinyl polymer having a quaternary carbon in the main chain is known to have a low ceiling temperature and to be decomposable to light and electron beams. It does not show high performance as a resist. Here, by introducing a functional group having an unshared electron pair into the terminal quaternary carbon of the polymer main chain quantitatively through one carbon atom as in the present invention, the electron beam responds to the electron beam with high efficiency. A system in which decomposition progresses quantitatively from the terminal can be achieved. Furthermore, since poly (α-methylstyrene) has a high glass transition point and suppresses molecular perturbation and has a low molecular weight distribution, such a system has extremely high resolution and high-order fine processing. It is a useful material in the semiconductor field that requires technology.

【図面の簡単な説明】[Brief description of the drawings]

【図1】実施例1で得られた重合体の電子線感度特性曲
FIG. 1 is an electron beam sensitivity characteristic curve of a polymer obtained in Example 1.

【図2】実施例2で得られた重合体の電子線感度特性曲
FIG. 2 is an electron beam sensitivity characteristic curve of the polymer obtained in Example 2.

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】 下記の構造式(A)で表されるポリマー
主鎖の末端4級炭素に炭素原子1つを介して非共有電子
対を有する官能基を導入した末端官能基を有する高分子
化合物。 【化1】 [式中、Rは任意の開始剤断片を示す。R1、は水素ま
たは有機シリル基、有機シロキシ基、R2、R3及びR4
は水素または炭素数1から10のアルキル基、アリール
基、アラルキル基を表す。XはO、N、Sのような非共
有電子対をを有する置換基を示す。nは5〜10000
の整数を表す。]
1. A polymer having a terminal functional group in which a functional group having an unshared electron pair is introduced into a terminal quaternary carbon of a polymer main chain represented by the following structural formula (A) through one carbon atom. Compound. Embedded image [Wherein R represents any initiator fragment. R 1 is hydrogen or an organic silyl group, an organic siloxy group, R 2 , R 3 and R 4
Represents hydrogen, an alkyl group having 1 to 10 carbon atoms, an aryl group, or an aralkyl group. X represents a substituent having an unshared electron pair such as O, N, and S. n is 5 to 10,000
Represents an integer. ]
【請求項2】 下記の構造式(B)で表されるポリ(α
−メチルスチレン)骨格を有する請求項1に記載の高分
子化合物。 【化2】 [式中、R、R2、R3、R4、X及びnは上述と同
じ。]
2. Poly (α) represented by the following structural formula (B)
The polymer compound according to claim 1, which has a (-methylstyrene) skeleton. Embedded image [Wherein, R, R 2 , R 3 , R 4 , X and n are the same as described above. ]
【請求項3】 ビニルモノマーを有機金属系開始剤の存
在下でイオン重合した後、ケトン、イミン、2硫化炭
素、ハロメチルエーテル、ハロメチルスルフィドを付加
或いは縮合させポリマー主鎖の末端4級炭素に炭素原子
1つを介して非共有電子対を有する官能基を導入したこ
とを特徴とする化学式(A)で表される高分子化合物の
製造方法。 【化3】 [式中、R、R1、R2、R3、R4、X及びnは上述と同
じ。]
3. A method for ionic polymerization of a vinyl monomer in the presence of an organometallic initiator, followed by addition or condensation of a ketone, imine, carbon disulfide, halomethyl ether, or halomethyl sulfide to form a terminal quaternary carbon of the polymer main chain. A method for producing a polymer compound represented by the chemical formula (A), wherein a functional group having an unshared electron pair is introduced via one carbon atom into the compound. Embedded image [Wherein, R, R 1 , R 2 , R 3 , R 4 , X and n are the same as described above. ]
【請求項4】化学式(A)で表される化合物を用いた可
視光、紫外光、電子線、X線用ポジ型レジスト材料。 【化4】 [式中、R、R1、R2、R3、R4、X及びnは上述と同
じ。]
4. A positive resist material for visible light, ultraviolet light, electron beam and X-ray using the compound represented by the chemical formula (A). Embedded image [Wherein, R, R 1 , R 2 , R 3 , R 4 , X and n are the same as described above. ]
JP18687297A 1997-07-11 1997-07-11 Polymer compound having a functional group having an unshared electron pair at its terminal, method for producing the same, and positive resist material using the polymer compound Expired - Fee Related JP3536194B2 (en)

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JP3536194B2 JP3536194B2 (en) 2004-06-07

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US8377627B2 (en) 2007-08-13 2013-02-19 Jsr Corporation Compound and radiation-sensitive composition

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
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US8173348B2 (en) 2006-06-27 2012-05-08 Jsr Corporation Method of forming pattern and composition for forming of organic thin-film for use therein
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