JPH11276848A - Gas treatment apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a gas treatment apparatus capable of heightening the electric field intensity between a ground electrode and a high voltage electrode. SOLUTION: This gas treatment apparatus comprises an electric discharge plasma treatment part 2 constituted of a flat type high voltage electrode 32, a flat ground electrode 33 installed at a prescribed gap from the flat type high voltage electrode 32, a ceramic plate 31 positioned between the high voltage electrode 32 and the ground electrode 33, a discharge space 38 sandwiched in between the high voltage electrode 32 and the ground electrode 33, and an adsorbent 39 which is installed in the discharge space 38 and can adsorb nitrogen oxide but not oxygen.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] The present invention relates to the concentration of nitrogen oxides contained in gas discharged from automobiles, power plants, boilers, incinerators, biomass, biodegradation activated sludge, etc., as well as houses, buildings and garages. The present invention relates to a gas processing apparatus for reducing the concentration of nitrogen oxides contained in a gas filling a space such as an underground parking lot or a laboratory.

[0002]

2. Description of the Related Art Conventionally, in order to reduce the concentration of nitrogen oxides contained in gas emitted from automobiles, combustion control, catalytic decomposition, adsorption and recovery, water washing, ammonia addition, biodegradation, discharge plasma treatment, etc. Has been studied and commercialized.

FIG. 24 shows, for example, Document 1: “IEEJ, A, Vol. 117, No. 10, (1997), p. 1034-1.
FIG. 039 is a perspective view showing a configuration of a discharge electrode in a conventional gas processing apparatus using a discharge plasma process disclosed in “039”. 24, reference numeral 201 denotes a discharge electrode arranged in an acrylic discharge chamber (not shown); 202, a flat ground electrode; and 203, a wire-like electrode arranged at a predetermined distance from the ground electrode 202. High voltage electrode.

As described above, in the conventional gas processing apparatus, the discharge electrode 201 is formed by arranging the high voltage electrode 203 at a predetermined distance from the ground electrode 202. In this conventional gas processing apparatus, the distance between the ground electrode 202 and the high voltage electrode 203 is set to 12.5 mm.

Next, the operation will be described. When a conventional gas processing apparatus disclosed in Document 1 is used to process nitrogen oxides contained in a processing gas that is a gas containing nitrogen oxides as a discharge plasma processing target, first, a high-voltage electrode is used. A corona discharge is generated between the ground electrode 202 and the high-voltage electrode 203 by applying a DC high voltage to 203. Then, during this corona discharge, a natural gas is flown. This allows
The nitrogen oxide contained in the processing gas is processed. Reference 1
During the corona discharge, for example, an N ₂ -diluted NO gas is flowing as a processing gas.

In such a discharge plasma treatment, nitrogen molecules are dissociated into two nitrogen atoms by corona discharge, and the nitrogen atoms react with nitrogen oxides, so that the nitrogen oxides return to nitrogen molecules and oxygen molecules. Is the operating principle.

[0007]

The conventional gas processing apparatus is configured as described above, and includes a ground electrode 202 and a high-voltage electrode 2.
03 was set to 12.5 mm, the electric field strength between the ground electrode 202 and the high-voltage electrode 203 could not be increased. Therefore, corona discharge became insufficient, and nitrogen molecules could not be efficiently dissociated into nitrogen atoms. As a result, there has been a problem that the amount of nitrogen oxides that become nitrogen molecules and oxygen molecules decreases, and it is difficult to reduce the concentration of nitrogen oxides contained in the processing gas.

In order to solve such a problem, a conventional gas processing apparatus uses a ground electrode 202 and a high-voltage electrode 20.
In the case where the distance between the ground electrode 202 and the high-voltage electrode 203 is increased, the problem that the flow rate of the processing gas must be newly reduced and the possibility that an abnormal discharge occurs between the ground electrode 202 and the high-voltage electrode 203 increase. Occurs.

Further, since the conventional gas processing apparatus is configured as described above, it is effective for processing nitrogen oxides contained in a processing gas containing no oxygen, but is a practical processing gas. There is a problem that the treatment of nitrogen oxides contained in an air-based treatment gas containing oxygen such as exhaust gas from automobiles is not effective. This is because if the process gas contains oxygen, nitrogen molecules cause a discharge chemical reaction with the oxygen molecules to generate new nitrogen oxides, such as nitrogen oxides originally contained in the process gas. nitrogen oxides newly generated by the discharge reaction of nitrogen molecules and oxygen molecules undergo oxygen discharge chemical reaction to produce a large mass number nitrogen oxides such as _{N 2 O 5, N 2 O} 5 Reacts with water to form nitric acid.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-described problems, and has as its object to provide a gas processing apparatus capable of increasing the electric field strength between a ground electrode and a high-voltage electrode.

Another object of the present invention is to provide a gas processing apparatus which is also effective for processing nitrogen oxides contained in a processing gas containing oxygen.

[0012]

According to the present invention, there is provided a gas processing apparatus comprising: a planar high-voltage electrode; a planar ground electrode disposed at a predetermined distance from the high-voltage electrode; A discharge having a dielectric located between the ground electrode, a discharge space sandwiched between the high-voltage electrode and the ground electrode, and an adsorbent disposed in the discharge space, which adsorbs nitrogen oxides and does not adsorb oxygen. It has a plasma processing unit.

In the gas processing apparatus according to the present invention, the distance between the high-voltage electrode and the ground electrode is 1 mm or less.

In the gas processing apparatus according to the present invention, the dielectric is formed in a film shape on the surface of the high voltage electrode on the ground electrode side.

[0015] In the gas processing apparatus according to the present invention, the discharge plasma processing section includes a plurality of discharge spaces in a direction perpendicular to the high voltage electrode or the ground electrode.

The gas processing apparatus according to the present invention is an ozone producing apparatus for supplying ozone to a processing gas flow path for introducing a processing gas, which is a gas containing nitrogen oxides, as a discharge plasma processing target into a discharge plasma processing section. It is equipped with a device.

[0017] In the gas treatment apparatus according to the present invention, the ozone production apparatus uses oxygen contained in the processing gas, which is not adsorbed by the adsorbent when the nitrogen oxide is adsorbed on the adsorbent, as an oxygen source. .

The gas processing apparatus according to the present invention includes a reducing gas producing apparatus for supplying a reducing gas to the discharge plasma processing section.

The gas processing apparatus according to the present invention is provided with a nitrogen producing apparatus and an oxygen producing apparatus for supplying oxygen to the ozone producing apparatus and supplying nitrogen discharged during the production of oxygen to the discharge plasma processing section.

The gas processing apparatus according to the present invention includes a first discharge plasma processing section and a second discharge plasma processing section, and the second discharge plasma processing section performs discharge plasma processing in the first discharge plasma processing section. Is adsorbed by the adsorbent, and the nitrogen oxides are adsorbed by the adsorbent of the first discharge plasma processing section during the discharge plasma processing in the second discharge plasma processing section.

In the gas processing apparatus according to the present invention, the nitrogen oxides adsorbed by the adsorbent of the first discharge plasma processing section or all of the nitrogen oxides adsorbed by the adsorbent of the first discharge plasma processing section are completely saturated. A first sensor for detecting a processing end time, which is a processing time, and a saturation time when the adsorbent of the second discharge plasma processing section is saturated or adsorbed by the adsorbent of the second discharge plasma processing section. A second sensor for detecting a processing end point when all of the nitrogen oxides have been processed, from discharge plasma processing in the first discharge plasma processing section to discharge plasma processing in the second discharge plasma processing section. Switching is performed when the first sensor detects the processing end point or when the second sensor detects the saturation point, and the discharge process in the second discharge plasma processing unit is performed. Switching from Zuma process to discharge plasma treatment in the first discharge plasma treatment, is performed when or if the first sensor when the second sensor detects the processing end time is detected saturation point.

A gas processing apparatus according to the present invention includes a processing gas storage section storing a processing gas which is a gas containing nitrogen oxides as a discharge plasma processing target, and a component separation section for separating the processing gas into components. Part, the carrier gas storage part that stores the carrier gas that pushes the processing gas stored in the processing gas storage part into the component separation part, and the nitrogen oxides of those separated by the component separation part that are subjected to discharge plasma processing. And a discharge plasma processing unit.

The gas processing apparatus according to the present invention includes a sensor for detecting nitrogen oxides discharged from the discharge plasma processing section, and performs the discharge plasma processing of the nitrogen oxides while the sensor detects the nitrogen oxides. What you do.

[0024] In the gas processing apparatus according to the present invention, the discharge plasma processing section includes a flat high-voltage electrode, a flat ground electrode arranged at a predetermined distance from the high-voltage electrode, and a high-voltage electrode. It has a dielectric material located between the ground electrode and a discharge space interposed between the high-voltage electrode and the ground electrode.

According to the gas processing apparatus of the present invention, there is provided a flat high-voltage electrode, a flat ground electrode arranged at a predetermined distance from the high-voltage electrode, and a gap between the high-voltage electrode and the ground electrode. A discharge plasma processing unit having a dielectric positioned therein and a discharge space sandwiched between a high-voltage electrode and a ground electrode is provided, and the discharge space of a processing gas that is a gas containing nitrogen oxides as a discharge plasma processing target is provided. The transit time is less than 1 millisecond.

[0026]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the present invention will be described below. Embodiment 1 FIG. FIG. 1 is a configuration diagram showing a gas processing apparatus according to Embodiment 1 of the present invention. FIG. 2 is a configuration diagram showing a discharge plasma processing unit in the gas processing apparatus according to Embodiment 1 of the present invention. FIG. 3 is an exploded perspective view showing a configuration of a discharge electrode in the gas processing apparatus according to Embodiment 1 of the present invention. FIG. 4 is a perspective view showing a state in which an adsorbent is arranged on a ground electrode constituting a discharge electrode. 1 to 4, reference numeral 1 denotes a gas treatment device,
Is a discharge plasma processing section, 3 is a processing gas flow path for introducing a processing gas into the discharge plasma processing section 2, and 4 is a processing gas flow path 3 for sucking processing gas from outside the gas processing apparatus 1. A first pump 5 provided, an ozonizer (ozone producing apparatus) 5, an ozone flow path 6 for introducing ozone produced by the ozonizer 5 into the processing gas flow path 4,
Reference numeral 7 denotes a common flow path through which oxygen and the gas after the discharge plasma processing are discharged from the discharge plasma processing unit 2, and reference numeral 8 denotes oxygen for introducing the oxygen discharged from the discharge plasma processing unit 2 into the ozonizer 5 as an oxygen source. The flow path 9 is provided with a second pump provided in the middle of the oxygen flow path 8 for sucking oxygen flowing through the oxygen flow path 8, and the flow path 9 is provided with a gas after discharge plasma processing discharged from the discharge plasma processing unit 2. A processed gas channel 11 for discharging the gas to the outside of the gas processing apparatus 1 is provided in the middle of the processed gas channel 10 for sucking the gas after the discharge plasma processing flowing through the processed gas channel 10. A third pump 12 is a three-way cock for connecting the common flow path 7 to the oxygen flow path 8 or the processed gas flow path 10, and 13 is a three-way cock for flowing nitrogen oxide concentration or nitrogen oxide flowing through the common flow path 7. Discharge plasm A sensor for detecting the concentration of the resulting component is treated.

In the discharge plasma processing section 2, reference numeral 21 denotes a metal discharge chamber, 22 denotes a discharge electrode disposed in the discharge chamber 21, 23 denotes a metal cylindrical support for supporting the discharge electrode 22, and 24 denotes an AC high voltage. A power supply, 25 a high voltage terminal, 26 a gas inlet provided in the discharge chamber 21 for introducing a processing gas into the discharge chamber 21,
Reference numeral 27 denotes the gas in the discharge chamber 21 and the discharge chamber 2
1 is a gas discharge port provided in the discharge chamber 21 for discharging outside. One terminal of the AC high voltage power supply 24 is connected to a high voltage electrode via a high voltage terminal 25, and the other terminal is connected to the discharge chamber 21 and grounded.

In the discharge electrode 22, 31 has a diameter 22c.
A circular ceramic plate (dielectric) having a thickness of about 1 m and a thickness of about 1 mm, and a high voltage 32 having a circular thin film shape having a diameter of about 20 cm formed by depositing gold on the surface of the ceramic plate 31 opposite to the ground electrode. The electrode 33 has an outer diameter of about 20 cm arranged at a predetermined distance from the high-voltage electrode 32,
An annular flat plate-like ground electrode having an inner diameter of about 3 cm is formed integrally with the ground electrode 33 on the outer periphery of the ground electrode 33 to dispose the ground electrode 33 at a predetermined distance from the high-voltage electrode 32. An outer wall portion 35 is an inner wall portion formed integrally with the ground electrode 33 on the inner periphery of the ground electrode 33 to dispose the ground electrode 33 at a predetermined distance from the high voltage electrode 32, and a gas passage portion 36 is provided. The first gas passage groove 37 provided in the outer wall portion 34, which allows passage of gas, is capable of passing gas.
The second gas passage groove 38 provided in the inner wall portion 35 is a discharge space surrounded by the ceramic plate 31, the ground electrode 33, the outer wall portion 34, and the inner wall portion 35.

Reference numeral 39 denotes an outer wall portion 34 and an inner wall portion 35
Is an adsorbent that adsorbs nitrogen oxides and does not adsorb oxygen, which is disposed on the ground electrode 33 partitioned by. Adsorbent 3
Examples of 9 include Molecular Sieve 13X (trade name), silica gel, activated carbon, and porous glass. The arrows shown in FIGS. 2 and 4 indicate the direction in which the gas flows.

FIG. 5 shows the converted electric field intensity E / n (= V / dn) obtained by dividing the electric field intensity E (discharge voltage V divided by the distance d between the opposed electrodes) by the gas density n on the horizontal axis. And the vertical axis represents the nitrogen atom production amount N per liter of nitrogen.
FIG. 4 is a characteristic diagram showing the relationship between the reduced electric field strength and the amount of generated nitrogen atoms, as shown in FIG. FIG. 6 shows the relationship between the product of the gas density and the distance between the electrodes and the discharge voltage, with the horizontal axis representing the product of the gas density n and the distance d between the opposing electrodes, and the vertical axis representing the discharge voltage V. FIG.

As shown in FIG. 6, nd is 2 × 10 ¹⁸ cm.
^{When −2 is} greater than ⁻² , the converted electric field intensity E / n is obtained even when nd changes, as indicated by the slope of the straight line connecting the origin and the point a.
(= V / nd) is constant. Therefore, as can be understood from FIG. 5, the nitrogen atom generation amount N is constant. On the other hand, as shown in FIG. 6, when nd is smaller than 2 × 10 ¹⁸ cm ⁻² , the origin and points a, b,
As shown by the slope of the straight line that connects c, the converted electric field strength E / n (= V / nd) increases. Therefore, as can be understood from FIG. 5, the amount of generated nitrogen atoms N increases as nd decreases.

The gas processing apparatus 1 according to the first embodiment generally operates under the conditions where the temperature is in the range of room temperature to several tens of degrees Celsius and the pressure is atmospheric pressure. Under this condition, nd ≦ 2 × 10 ¹⁸ cm ⁻² is satisfied when d ≦ 1 mm.
In the gas processing apparatus 1 according to the above, the distance between the high-voltage electrode 32 and the ground electrode 33 is set to 1 mm or less. As a result, the amount of generated nitrogen atoms during the discharge plasma treatment increases, and the amount of nitrogen oxides that become nitrogen molecules and oxygen molecules increases. Since the distance between the high-voltage electrode 32 and the ground electrode 33 is 1 mm or less, an adsorbent 39 that fits between these electrodes is used.

Next, the operation will be described. Here, a case where an air-based processing gas is used as the processing gas will be described.

When processing the nitrogen oxides contained in the processing gas using the gas processing apparatus 1 according to the first embodiment, first, the processing gas is introduced into the discharge plasma processing unit 2 through the processing gas flow path 3. . At this time, the ozone produced by the ozonizer 5 is introduced into the processing gas passage 3 through the ozone passage 6 using oxygen introduced through the oxygen passage 8 as an oxygen source. When ozone is introduced into the processing gas channel 3,
When the processing gas contains nitrogen monoxide, which is a nitrogen oxide, the nitrogen monoxide is oxidized to nitrogen dioxide, which is a nitrogen oxide that is easily adsorbed by the adsorbent 39. When a processing gas is introduced into the discharge plasma processing unit 2, the processing gas passes through the first gas passage groove 36 and enters the discharge space 38. Of the processing gas entering the discharge space 38, nitrogen oxides and nitrogen are adsorbed by the adsorbent 39 disposed in the discharge space 38, and oxygen passes through the second gas passage groove 37 without being adsorbed by the adsorbent 39. Then, it exits from the discharge space 38 and is discharged from the discharge plasma processing unit 2 through the inside of the cylindrical column 23. Thus, nitrogen oxides and oxygen contained in the processing gas are separated. Oxygen discharged from the discharge plasma processing section 2 flows through an oxygen flow path 8 connected by a common flow path 7 and a three-way cock 12, and is used as an oxygen source of the ozonizer 5.

Thereafter, an AC high voltage is applied to the high voltage electrode 32 at a saturation point when the adsorbent 39 is saturated with nitrogen oxides.
For example, an AC voltage having a zero-peak value of 6 kV or more is applied to stop the introduction of the processing gas into the discharge plasma processing unit 2. For example, the point in time when the sensor 13 detects nitrogen oxides contained in the processing gas is defined as the saturation point. Sensor 1
When 3 detects the saturation point, the three-way cock 12 connects the common flow path 7 to the processed gas flow path 10 and stops the first pump 4 according to the instruction of the controller provided in the sensor 13. . When an AC high voltage is applied to the high voltage electrode 32, corona discharge occurs between the ground electrode 33 and the high voltage electrode 32, and nitrogen oxides and nitrogen adsorbed on the adsorbent 39 are desorbed by the discharge heat. The desorbed nitrogen oxide is subjected to a discharge plasma treatment in a nitrogen atmosphere. The gas after the discharge plasma treatment is supplied to the second gas passage groove 3.
7 and out of the discharge space 38, the cylindrical support 2
3, and discharged from the discharge plasma processing unit 2 through the inside of
The gas flows through the processed gas flow path 10 connected by the common flow path 7 and the three-way cock 12, and is discharged to the outside of the gas processing apparatus 1.

Thereafter, at the end of the process, when the nitrogen oxides adsorbed on the adsorbent 39 have all been processed, the application of the AC high voltage to the high voltage electrode 32 is stopped and the processing gas flow path 3
Through the process gas is introduced into the discharge plasma processing unit 2.
For example, a point in time when the sensor 13 detects that the concentration of oxygen obtained by performing the discharge plasma processing on the nitrogen oxides contained in the processing gas has started to decrease is defined as a processing end point.
When the sensor 13 detects the end point of the process, the three-way cock 12 connects the common flow path 7 to the oxygen flow path 8 and instructs the first pump 4 according to an instruction of a controller provided in the sensor 13. .

As described above, according to the first embodiment, the planar high-voltage electrode 32, the planar ground electrode 33 arranged at a predetermined distance from the high-voltage electrode 32,
A ceramic plate 31 located between the high-voltage electrode 32 and the ground electrode 33; a discharge space 38 sandwiched between the high-voltage electrode 32 and the ground electrode 33; Since the discharge plasma processing unit 2 having the adsorbent 39 that does not adsorb oxygen is provided, the nitrogen oxides contained in the processing gas are adsorbed by the adsorbent 39, so that the nitrogen oxides and oxygen are separated. An effect is also obtained that is effective for the treatment of nitrogen oxides contained in the separated processing gas containing oxygen. Further, when the adsorbent 39 is saturated with the nitrogen oxide, the nitrogen oxide is subjected to the discharge plasma treatment, so that the discharge plasma treatment becomes intermittent, and the effect of saving power can be obtained.

Further, according to the first embodiment, since the distance between the high voltage electrode 32 and the ground electrode 33 is set to 1 mm or less, the electric field strength between the ground electrode 33 and the high voltage electrode 32 increases. In addition, the effect of increasing the amount of nitrogen atoms generated during the discharge plasma treatment and increasing the amount of nitrogen oxides to become nitrogen molecules and oxygen molecules is obtained. In addition, the high voltage electrode 3
The AC voltage applied to 2 becomes about 6 kV in zero-peak value, and an effect of saving power can be obtained.

Further, according to the first embodiment, the ozone produced by the ozonizer 5 is supplied to the processing gas flow path 3 for introducing the processing gas into the discharge plasma processing section 2. Contains nitrogen oxides, which are nitrogen oxides, the nitrogen oxides are oxidized to nitrogen oxides, which are nitrogen oxides that are easily adsorbed by the adsorbent 39, and the effect of increasing the discharge plasma treatment amount is obtained. .

According to the first embodiment, the ozonizer 5 uses the oxygen contained in the processing gas, which is not adsorbed by the adsorbent 39 when the nitrogen oxide is adsorbed by the adsorbent 39, as an oxygen source. Therefore, the effect that the oxygen contained in the processing gas can be effectively used can be obtained.

Embodiment 2 The gas processing apparatus according to the second embodiment is different from the gas processing apparatus according to the first embodiment in the configuration of the discharge electrode. Hereinafter, the configuration of the discharge electrode in the gas processing apparatus according to the second embodiment will be described.

FIG. 7 is an exploded perspective view showing a configuration of a discharge electrode in a discharge plasma processing section constituting a gas processing apparatus according to Embodiment 2 of the present invention. FIG. 8 is a sectional view showing a state in which a dielectric film is coated on the surface of the high-voltage electrode constituting the discharge electrode on the ground electrode side. 7 and 8, 41 is a discharge electrode, 42 is 20 cm in diameter.
The high-voltage electrode 43 has a thickness of about 100 μm and is formed by spraying or sputtering alumina on the surface of the high-voltage electrode 42 on the ground electrode 33 side.

As described above, according to the second embodiment, the same effects as in the first embodiment can be obtained.

According to the second embodiment, the dielectric film 43 formed by spraying or sputtering alumina on the surface of the high-voltage electrode 42 on the side of the ground electrode 33 is used as a dielectric. The effect is that the thickness of the dielectric is smaller than in the case of the first embodiment, the voltage drop due to the dielectric is smaller, and the electric field strength of the discharge space 38 is higher than in the first embodiment.

Embodiment 3 In the gas processing apparatus according to the third embodiment, the configuration of the discharge plasma processing unit is the same as that of the first embodiment.
Is different from the gas processing device according to the above. Hereinafter, the configuration of the discharge plasma processing unit in the gas processing apparatus according to the third embodiment will be described.

FIG. 9 is a configuration diagram showing a discharge plasma processing section in a gas processing apparatus according to Embodiment 3 of the present invention. FIG. 10 is a perspective view showing a state in which a dielectric film is coated on both surfaces of a high voltage electrode constituting a discharge electrode. 9 and 10, reference numeral 51 denotes a discharge plasma processing unit, and reference numeral 52 denotes a discharge electrode.

In the discharge electrode 52, 53 is the outer diameter 2
An annular flat high voltage electrode having a diameter of about 2 cm and an inner diameter of about 3 cm, a first dielectric film 54 a having a thickness of about 100 μm formed by spraying or sputtering alumina on the upper surface of the high voltage electrode 53. (Dielectric), 5
Reference numeral 4b denotes a thickness 1 formed by spraying or sputtering alumina on the lower surface of the high-voltage electrode 53.
A second dielectric film (dielectric) having a thickness of about 00 μm, and a first ground electrode 55 a having a diameter of about 20 cm and arranged above the high voltage electrode 53 at a predetermined distance from the high voltage electrode 53. (Ground electrode) 55b is a ring-shaped plate-like second ground electrode having an outer diameter of about 20 cm and an inner diameter of about 3 cm which is arranged below the high voltage electrode 53 at a predetermined distance from the high voltage electrode 53. The ground electrode 56a is formed integrally with the first ground electrode 55a on the outer periphery of the first ground electrode 55a in order to arrange the first ground electrode 55a at a predetermined distance from the high voltage electrode 53. The first outer wall portion 57a faces the inner periphery of the second ground electrode 55b in the first ground electrode 55a in order to arrange the first ground electrode 55a at a predetermined interval from the high voltage electrode 53. In position with the first ground electrode 55a. The first inner wall portion formed, the 5
6b is a second ground electrode formed integrally with the second ground electrode 55b on the outer periphery of the second ground electrode 55b in order to arrange the second ground electrode 55b at a predetermined distance from the high voltage electrode 53.
The outer wall portion 57b is formed integrally with the second ground electrode 55b on the inner periphery of the ground electrode 55b in order to arrange the second ground electrode 55b at a predetermined distance from the high voltage electrode 53. 2, an inner wall portion 58a is a first dielectric film 54a,
The first ground electrode 55a, the first outer wall portion 56a, and the first
A first discharge space (discharge space) 58b surrounded by an inner wall portion 57a of the second dielectric film 54b, a second ground electrode 55b, a second outer wall portion 56b, and a second inner wall portion 5
7b is a second discharge space (discharge space) surrounded by 7b. Although not shown, the first and second outer wall portions 56a,
56b and the first and second inner wall portions 57a and 57b
A gas passage groove through which gas can pass is provided.

Numeral 59a adsorbs nitrogen oxides and does not adsorb oxygen molecules disposed on the first dielectric film 54a defined by the first outer wall 56a and the first inner wall 57a. The first adsorbent (adsorbent) 59b adsorbs nitrogen oxide disposed on the second ground electrode 55b defined by the second outer wall portion 56b and the second inner wall portion 57b, and absorbs oxygen. Is a second adsorbent (adsorbent) that does not adsorb. Note that the arrow shown in FIG. 9 indicates the direction in which the gas flows.

Next, the operation will be described. Here, a case where an air-based processing gas is used as the processing gas will be described.

When processing the nitrogen oxides contained in the processing gas using the gas processing apparatus according to the third embodiment, first, the discharge plasma processing section 5 is passed through the processing gas flow path.
1 is introduced with a processing gas. When a processing gas is introduced into the discharge plasma processing unit 51, the processing gas is supplied to the first outer wall 56.
a through the gas passage groove provided in the first discharge space 5.
8a, passes through a gas passage groove provided in the second outer wall portion 56b, and enters the second discharge space 58b. Of the processing gas that has entered the first discharge space 58a, nitrogen oxides and nitrogen are adsorbed by the first adsorbent 59a disposed in the first discharge space 58a, and oxygen is adsorbed by the first adsorbent 59a. Instead, the gas passes through the gas passage groove provided in the first inner wall portion 57a, exits from the first discharge space 58a, passes through the inside of the cylindrical column 23, and is discharged from the discharge plasma processing portion 51. . On the other hand, of the processing gas that has entered the second discharge space 58b, nitrogen oxides and nitrogen are adsorbed by the second adsorbent 59b disposed in the first discharge space 58b, and oxygen is removed by the second adsorbent 59b.
Without being adsorbed by the adsorbent 59b of the second discharge space 58b through the gas passage groove provided in the second inner wall portion 57b.
From the discharge plasma processing unit 51 through the inside of the cylindrical support 23.

Thereafter, an AC high voltage is applied to the high voltage electrode 53 at the time when the first and second adsorbents 59a and 59b are saturated with the nitrogen oxide, and the processing gas is supplied to the discharge plasma processing section 51. Stop introducing.

Thereafter, at the end of the processing, ie, when the nitrogen oxides adsorbed on the first and second adsorbents 59a and 59b have all been processed, the application of the AC high voltage to the high voltage electrode 53 is stopped. A processing gas is introduced into the discharge plasma processing unit 51 through the gas flow path.

As described above, according to the third embodiment, the same effects as in the first embodiment can be obtained.

According to the third embodiment, two discharge spaces, namely, the high voltage electrode 53 and the first ground electrode 5
5a, and a second discharge space 58b sandwiched between the high-voltage electrode 53 and the second ground electrode 55b, so that the discharge plasma during the discharge plasma processing is provided. The effect of increasing the processing amount can be obtained.

Embodiment 4 In the gas processing apparatus according to the fourth embodiment, the configuration of the discharge plasma processing unit is the same as that of the first embodiment.
Is different from the gas processing device according to the above. Hereinafter, the configuration of the discharge plasma processing unit in the gas processing apparatus according to the fourth embodiment will be described.

FIG. 11 is a configuration diagram showing a discharge plasma processing section constituting a gas processing apparatus according to Embodiment 3 of the present invention. In FIG. 11, reference numeral 61 denotes a discharge plasma processing unit;
Reference numeral 62 denotes a metal discharge chamber, 63 denotes a discharge electrode disposed in the discharge chamber 62, and 72 denotes an insulating columnar support for supporting the discharge electrode 63.

In the discharge electrode 63, 64 is a ground electrode formed integrally with the discharge chamber 62, 65 is an opening provided at the center of the ground electrode 64 and having a diameter of about 3 cm, 6.
Reference numeral 6a denotes a circular first ceramic plate (dielectric) having a diameter of about 22 cm and a thickness of about 1 mm disposed above the ground electrode 64, and 67a denotes a surface of the first ceramic plate 66a opposite to the ground electrode 64. A first high-voltage electrode (high-voltage electrode) 66 b having a diameter of about 20 cm and a thickness of about 1 mm disposed below the ground electrode 64 and having a circular thin film shape having a diameter of about 20 cm formed by vapor deposition of gold. The circular second ceramic plate (ceramic plate) 67b is a circular thin film-shaped second film having a diameter of about 20 cm formed by depositing gold on the surface of the second ceramic plate 66b opposite to the ground electrode 64. High voltage electrode (high voltage electrode), 68a is ground electrode 6
4 is formed at a predetermined distance from the first high-voltage electrode 67a, and is formed integrally with the ground electrode 64 so as to form a circle having a diameter of about 20 cm on the upper surface of the ground electrode 64.
The outer wall 69 of the first high-voltage electrode 6
7a to be arranged at a predetermined distance from the ground electrode 6
4 so as to draw a circle having a diameter of about 3 cm on the upper surface thereof.
The inner wall portion 68b formed integrally with the ground electrode 6
4 is formed integrally with the ground electrode 64 so as to draw a circle having a diameter of about 20 cm on the lower surface of the ground electrode 64 in order to dispose a predetermined distance from the second high-voltage electrode 67b.
, A first discharge space (discharge space) surrounded by the ground electrode 64, the first ceramic plate 66a, the first outer wall portion 68a, and the inner wall portion 69; 70b, a ground electrode 64; This is a second discharge space (discharge space) surrounded by the second ceramic plate 66b and the second outer wall portion 68b. Although not shown, the first and second outer wall portions 68
a, 68b, and an inner wall portion 69 are provided with gas passage grooves through which gas can pass.

A first adsorbent 71a adsorbs nitrogen oxides and adsorbs no oxygen molecules disposed on the ground electrode 64 defined by the first outer wall 68a and the inner wall 69. ), 71b is a second adsorbent (adsorbent) that adsorbs nitrogen oxides and does not adsorb oxygen molecules disposed on the second ceramic plate 66b partitioned by the second outer wall portion 68b.

Next, the operation will be described. Here, a case where an air-based processing gas is used as the processing gas will be described.

When processing the nitrogen oxides contained in the processing gas using the gas processing apparatus according to the fourth embodiment, first, the discharge plasma processing section 6 is processed through the processing gas flow path.
1 is introduced with a processing gas. When a processing gas is introduced into the discharge plasma processing unit 61, the processing gas is supplied to the first outer wall 68.
a through the gas passage groove provided in the first discharge space 7.
Enter 0a. Of the processing gas that has entered the first discharge space 70a, nitrogen oxides and nitrogen are adsorbed by the first adsorbent 71a disposed in the first discharge space 70a, and oxygen is adsorbed by the first adsorbent 71a. Instead, the gas exits the first discharge space 70a through the gas passage groove provided in the inner wall portion 69, and is discharged from the discharge plasma processing portion 61 through the opening 65 and the second outer wall portion 68b. Is done. First adsorbent 71
After a is saturated with nitrogen oxides, the discharge plasma processing unit 61
When the processing gas is introduced into the second discharge space 70b, the processing gas passes through the gas passage groove and the opening 65 provided in the first outer wall portion 68a. Second discharge space 70b
Of the processing gas that has entered, the nitrogen oxides and nitrogen are adsorbed by the second adsorbent 71b disposed in the second discharge space 70b, and the oxygen is not adsorbed by the second adsorbent 71b but is adsorbed by the second adsorbent 71b. After passing through the gas passage groove provided in the outer side wall portion 68b, the second
From the discharge space 70b of the discharge plasma processing unit 6
Emitted from 1.

Thereafter, at the time when the first and second adsorbents 71a and 71b are saturated with nitrogen oxides, an AC high voltage is applied to the first and second high-voltage electrodes 67a and 67b to discharge. The introduction of the processing gas into the plasma processing unit 61 is stopped.

Thereafter, the first and second high-voltage electrodes 67a are terminated at the end of the treatment when all the nitrogen oxides adsorbed on the first and second adsorbents 71a and 71b are treated.
And the application of the AC high voltage to the discharge plasma processing section 61 is stopped through the processing gas flow path.

As described above, according to the fourth embodiment, the same effects as in the first embodiment can be obtained.

According to the fourth embodiment, the first discharge space 70a sandwiched between two discharge spaces, that is, the first high voltage electrode 67a and the ground electrode 64, and the second high voltage electrode Since the second discharge space 70b is interposed between the second electrode 67a and the ground electrode 64, the effect of increasing the discharge plasma processing amount during the discharge plasma processing can be obtained.

Embodiment 5 The gas processing apparatus according to the fifth embodiment is different from the gas processing apparatus according to the first embodiment in that the oxygen source of the ozonizer is taken in from outside the gas processing apparatus. Hereinafter, a gas processing apparatus according to the fifth embodiment will be described.

FIG. 12 is a configuration diagram showing a gas processing apparatus according to Embodiment 5 of the present invention. In FIG. 12, 81
Is a gas processing apparatus, 82 is an oxygen source flow path for introducing air into the ozonizer 5 as an oxygen source, and 83 is provided in the middle of the oxygen source flow path 82 for sucking air from outside the gas processing apparatus 81. A fourth pump 84 is an oxygen discharge passage for discharging oxygen discharged from the discharge plasma processing unit 2 to the outside of the gas processing device 81, and 85 is an oxygen discharge passage for sucking oxygen flowing through the oxygen discharge passage 84. Discharge channel 84
A fifth pump 86 provided in the middle is a three-way cock for connecting the common flow path 7 to the oxygen discharge flow path 84 or the processed gas flow path 10.

Gas processing apparatus 81 according to Embodiment 5
Then, the ozone produced by the ozonizer 5 is introduced into the processing gas channel 3 through the ozone channel 6 using the air introduced through the oxygen source channel 82 as the oxygen source.

In the gas processing apparatus 81 according to the fifth embodiment, the oxygen discharged from the discharge plasma processing section 2 flows through the common flow path 7 and the oxygen discharge flow path 84 connected by the three-way cock 86, It is discharged outside the device 81.

As described above, according to the fifth embodiment, the same effects as in the first embodiment can be obtained except that the oxygen contained in the processing gas can be effectively used.

Embodiment 6 FIG. The gas processing apparatus according to the sixth embodiment is different from the gas processing apparatus according to the fifth embodiment in that oxygen produced by the oxygen production apparatus is used as an oxygen source for the ozonizer. Hereinafter, a gas processing apparatus according to the sixth embodiment will be described.

FIG. 13 is a configuration diagram showing a gas processing apparatus according to Embodiment 6 of the present invention. In FIG. 13, 91
Is a gas processing device, 92 is an oxygen production device, 93 is an oxygen source flow path for introducing oxygen produced by the oxygen production device 92 as an oxygen source into the ozonizer 5, and 94 is an air source for introducing air into the oxygen production device 92. An air flow path 95 is provided with an air flow path 9 for sucking air from outside the gas processing device 91.
A sixth pump provided in the middle of 4.

Gas processing apparatus 91 according to Embodiment 6
Then, ozone produced by the ozonizer 5 is introduced into the processing gas flow path 3 through the ozone flow path 6 using oxygen produced by the oxygen production apparatus 92 as an oxygen raw material.

In the gas processing apparatus 91 according to the sixth embodiment, similarly to the gas processing apparatus 81 according to the fifth embodiment, oxygen discharged from the discharge plasma processing section 2 is supplied to the common flow path 7 and the three-way cock 86. The gas flows through the connected oxygen discharge channel 84 and is discharged to the outside of the gas processing device 81.

As described above, according to the sixth embodiment, the same effects as in the first embodiment can be obtained except that the oxygen contained in the processing gas can be effectively used.

Embodiment 7 The gas processing apparatus according to the seventh embodiment is different from the gas processing apparatus according to the sixth embodiment in that nitrogen discharged from the oxygen production apparatus is supplied to a discharge plasma processing unit. Hereinafter, a gas processing apparatus according to the seventh embodiment will be described.

FIG. 14 is a configuration diagram showing a gas processing apparatus according to Embodiment 7 of the present invention. In FIG. 14, 10
1 is a gas processing apparatus, 102 is an oxygen production apparatus for discharging nitrogen during oxygen production (reducing gas production apparatus, reducing gas production apparatus and combined oxygen production apparatus), and 103 is an oxygen production apparatus 102
Is a nitrogen flow path for introducing nitrogen discharged from the discharge plasma processing unit 2. As the oxygen production apparatus 102, for example, PSA (Pressure Swing Ads)
There is an oxygen production apparatus.

The gas processing apparatus 10 according to the seventh embodiment
In 1, the ozone produced by the ozonizer 5 is introduced into the processing gas flow path 3 through the ozone flow path 6 using the oxygen produced by the oxygen production apparatus 102 as an oxygen source, and the nitrogen discharged from the oxygen production apparatus 102 is converted to nitrogen. The gas is introduced into the discharge plasma processing unit 2 through the channel 103.

In the gas processing apparatus 101 according to the seventh embodiment, oxygen discharged from the discharge plasma processing section 2 is supplied to the common flow path 7 and the three-way cock 86 in the same manner as the gas processing apparatus 81 according to the fifth embodiment. The gas flows through the connected oxygen discharge channel 84 and is discharged to the outside of the gas processing device 81.

As described above, according to the seventh embodiment, the same effects as those of the first embodiment can be obtained except that the oxygen contained in the processing gas can be effectively used.

According to the seventh embodiment, since nitrogen as a reducing gas is supplied to the discharge plasma processing section 2, the amount of generated nitrogen atoms during the discharge plasma processing increases, and Has the effect of increasing the amount of nitrogen and oxygen molecules. Similar effects can be obtained by using hydrogen, methane, ethylene, and ammonia in addition to nitrogen as the reducing gas.

Further, according to the seventh embodiment, since nitrogen discharged during oxygen production by the oxygen production apparatus 103 is supplied to the discharge plasma processing section 2, nitrogen is supplied to the discharge plasma processing section 2. The effect that the equipment can be simplified is obtained.

Embodiment 8 FIG. The gas processing apparatus according to the eighth embodiment is different from the gas processing apparatus according to the first embodiment in that it has two discharge plasma processing units. Hereinafter, a gas processing apparatus according to the eighth embodiment will be described.

FIG. 15 is a configuration diagram showing a gas processing apparatus according to Embodiment 8 of the present invention. In FIG.
Reference numeral 1 denotes a gas processing apparatus, 112a denotes a first discharge plasma processing unit, and 112b denotes a second discharge plasma processing unit. Reference numeral 113 denotes a common processing gas flow path for introducing a processing gas into the first and second discharge plasma processing units 112a and 112b, and reference numeral 113a denotes a processing gas supplied to the first discharge plasma processing unit 1a.
A first processing gas flow path for introducing into the 12a, 113b
Is a second processing gas flow path for introducing a processing gas into the second discharge plasma processing unit 112b, and 114 is in the middle of the common processing gas flow path 111 for sucking processing gas from outside the gas processing apparatus 111. It is a first pump provided.

Reference numeral 115 denotes an ozonizer (ozone producing apparatus), and reference numeral 116 denotes an ozone flow path for introducing ozone produced by the ozonizer 115 into the common processing gas flow path 113.

Reference numeral 117a denotes a first common flow path through which oxygen discharged from the first discharge plasma processing section 112a and a gas after the discharge plasma processing flow, and 117b denotes a first common flow path discharged from the second discharge plasma processing section 112b. This is a second common flow path through which oxygen and gas after discharge plasma processing flow.

Reference numeral 118 denotes a common oxygen flow path for introducing oxygen discharged from the first and second discharge plasma processing units 112a and 112b into the ozonizer 115 as an oxygen source, and 118a denotes a first discharge plasma processing unit. Ozonizer 115 using oxygen discharged from 112a as an oxygen raw material.
A first oxygen flow path 118b for introducing oxygen into the ozonizer 115 is a second oxygen flow path for introducing oxygen discharged from the second discharge plasma processing unit 112b to the ozonizer 115 as an oxygen source. A second pump provided in the middle of the common oxygen flow path 118 for sucking oxygen flowing through the passage 118.

Reference numeral 120 denotes a common processed gas flow path for discharging the gas after discharge plasma processing discharged from the first and second discharge plasma processing units 112a and 112b to the outside of the gas processing apparatus 111. Is a first gas for discharging the gas after the discharge plasma processing discharged from the first discharge plasma processing unit 112a to the outside of the gas processing apparatus 111.
Is a second processed gas flow path for discharging the gas after discharge plasma processing discharged from the second discharge plasma processing unit 112b to the outside of the gas processing apparatus 111; The third pump is provided in the middle of the common processed gas flow path 120 to suck the gas after the discharge plasma processing flowing through the common processed gas flow path 120.

Reference numeral 122 denotes a first three-way cock (switching means) for connecting the common processing gas channel 113 to the first processing gas channel 113a or the second processing gas channel 113b. A second three-way cock for connecting the common flow channel 117a to the first oxygen flow channel 118a or the first processed gas flow channel 120a, and the second three-way cock 124 connects the second common flow channel 117b to the second oxygen flow channel 118b or a third three-way cock for connecting to the second processed gas flow path 120b, 125 connects the common oxygen flow path 118 to the first oxygen flow path 11
This is a fourth three-way cock for connecting to 8a or the second oxygen flow path 118b.

Further, 126a is the first common flow channel 117a.
The first sensor 126b for detecting the concentration of nitrogen oxide or the concentration of a component obtained by performing discharge plasma treatment on the nitrogen oxide flows through the second common channel 117b.
This is a second sensor for detecting the concentration of nitrogen oxide or the concentration of a component obtained by performing discharge plasma treatment on nitrogen oxide. First, second sensor 126a, as 126b, the one that measures only the concentration of nitrogen oxides, for example, there is a NO _X sensor chemical luminescence method, discharge plasma treatment the concentration and nitrogen oxides of nitrogen oxides For example, an infrared absorption spectrophotometer or an ultraviolet absorption photometer is used to detect the concentration of the component obtained by the above method.

Next, the operation will be described. Here, a case where an air-based processing gas is used as the processing gas will be described.

When processing the nitrogen oxides contained in the processing gas by using the gas processing apparatus according to the eighth embodiment, first, the common processing gas passage 113 and the first three-way cock 122 1 processing gas channel 113a
Through the process gas is introduced into the first discharge plasma processing unit 112a. At this time, ozone produced by the ozonizer 115 is introduced into the common processing gas channel 113 through the ozone channel 116 using oxygen introduced through the common oxygen channel 118 as an oxygen source. When the processing gas is introduced into the first discharge plasma processing unit 112a, the nitrogen oxides and nitrogen are adsorbed by the adsorbent, and the oxygen discharged from the first discharge plasma processing unit 112a without being adsorbed by the adsorbent becomes the first gas. Flows through a common oxygen flow path 117 a, a first oxygen flow path connected by a second three-way cock 123, and a common oxygen flow path 118 connected by a fourth three-way cock 125.
Used as 15 oxygen sources.

Thereafter, the first discharge plasma processing section 112
The discharge plasma processing in the first discharge plasma processing unit 112a is started at the saturation point when the adsorbent a is saturated, and the processing gas is introduced into the second discharge plasma processing unit 112b. For example, the time when the nitrogen oxide contained in the processing gas is detected by the first sensor 126a is defined as the time when the adsorbent of the first discharge plasma processing unit 112a is saturated.
The first sensor 126a is connected to the first discharge plasma processing unit 11
When the saturation point of the adsorbent 2a is detected, the first sensor 1
According to the instruction of the controller provided in 26a,
The first three-way cock 122 allows the common processing gas flow path 113
Is connected to the second processing gas channel 113b, the first common channel 117a is connected to the first processed gas channel 120a by the second three-way cock 123, and the third three-way cock 1
24, the second common flow channel 117b becomes the second oxygen flow channel 1
The common oxygen flow path 118 is connected to the second oxygen flow path 118b by a fourth three-way cock 125. The gas after the discharge plasma processing in the first discharge plasma processing unit 112a is supplied to the first common flow path 117a and the second common flow path 117a.
Flows through the first processed gas channel 120a and the common processed gas channel 120 connected by the three-way cock 123, and is discharged to the outside of the gas processing device 111.

Thereafter, the second discharge plasma processing section 112
at the saturation point when the adsorbent b is saturated or at the first point
The discharge plasma processing in the first discharge plasma processing section 112a is stopped at the end of processing when all the nitrogen oxides adsorbed by the adsorbent of the discharge plasma processing section are processed, and the processing gas is discharged to the first discharge plasma processing section 112a. Plasma processing unit 112a
And the second discharge plasma processing unit 112
The discharge plasma processing at b is started. For example, the nitrogen oxide contained in the processing gas is converted into the second sensor 126b.
Is detected by the second discharge plasma processing unit 112
The first sensor 126a detects that the concentration of oxygen obtained by performing the discharge plasma treatment on the nitrogen oxides contained in the processing gas has started to decrease, as the saturation time of the adsorbent b. And The second sensor 126b detects the saturation point of the adsorbent of the second discharge plasma processing unit 112b, or the first sensor 126a processes the nitrogen oxides adsorbed by the adsorbent of the first discharge plasma processing unit. When the end point is detected, the controller provided in the first sensor 126a or the second sensor 126b
The common three-way cock 122 connects the common processing gas channel 113 to the first processing gas channel 113a in accordance with instructions from a controller provided in the second three-way cock 1.
23, the first common flow channel 117a becomes the first oxygen flow channel 1
18a, and the second three-way cock 124
Is connected to the second processed gas flow path 120b, and the fourth three-way cock 125 connects the common oxygen flow path 118 to the first oxygen flow path 118a. The gas after the discharge plasma processing in the second discharge processing unit 112b is supplied to the second common flow path 117b and the second three-way cock 123.
Flows through the second processed gas flow path 120b and the common processed gas flow path 120 connected to each other, and is discharged outside the gas processing apparatus 111. In FIG. 15, the flow path through which the gas flows in this state is indicated by a thick line.

Thereafter, the first discharge plasma processing section 112
a at the time of saturation when the adsorbent of a
The discharge plasma processing in the second discharge plasma processing section 112b is stopped at the end of the processing when all the nitrogen oxides adsorbed by the adsorbent of the discharge plasma processing section are processed, and the processing gas is discharged to the second discharge plasma processing section 112b. Plasma processing unit 112b
And the first discharge plasma processing unit 112
The discharge plasma processing in a is started.

FIG. 16 shows the time t on the horizontal axis and the first time on the vertical axis.
Nitrogen oxide concentration C detected by the sensor 126a
FIG. 4 is a characteristic diagram showing a temporal change of a nitrogen oxide concentration, which is shown by taking a line; As shown in FIG. 16, nitrogen oxides are detected by the first sensor 126a at the time t1, and the time t1 is the saturation point of the adsorbent in the first discharge plasma processing unit 112a. FIG. 16 shows the first discharge plasma processing unit 1
This shows a case where the processing gas is continuously introduced into the first discharge plasma processing unit 126a even after the adsorbent 12a is saturated, and C0 is included in the processing gas before being introduced into the first discharge plasma processing unit 112a. Concentration of nitrogen oxides.

As described above, according to the eighth embodiment, the same effects as in the first embodiment can be obtained.

According to the eighth embodiment, the nitrogen oxide is adsorbed on the adsorbent of the second discharge plasma processing section 112b during the discharge plasma processing in the first discharge plasma processing section 112a, and the second discharge Plasma processing unit 112b
Since the nitrogen oxides are adsorbed on the adsorbent of the first discharge plasma processing section 112a during the discharge plasma processing in the above, the effect of continuously processing the nitrogen oxides contained in the processing gas is obtained.

According to the eighth embodiment, the first sensor 126a controls the switching from the discharge plasma processing in the first discharge plasma processing section 112a to the discharge plasma processing in the second discharge plasma processing section 112b. The detection is performed when the processing end time is detected or when the second sensor 126b detects the saturation time, and the discharge plasma processing in the second discharge plasma processing unit 112b is changed to the discharge plasma processing in the first discharge plasma processing unit 112a. Since the switching is performed when the second sensor 126 detects the processing end point or when the first sensor detects the saturation point, the first discharge plasma processing unit 112a switches from the discharge plasma processing to the second discharge plasma. Processing unit 112
The effect that the switching to the discharge plasma processing in b or the switching from the discharge plasma processing in the second discharge plasma processing unit 112b to the discharge plasma processing in the first discharge plasma processing unit 112a can be efficiently performed is obtained.

A discharge plasma apparatus having two discharge plasma processing units is configured to take in the oxygen source of the ozonizer from the outside of the gas processing apparatus (see FIG. 17) as shown in the fifth embodiment. The same effect can be obtained. 17, reference numeral 131 denotes a gas processing apparatus; 132, an oxygen source flow path for introducing air into the ozonizer 115 using air as an oxygen source; and 133, an oxygen source flow path 132 for sucking air from outside the gas processing apparatus 131. A fourth pump 124 provided in the middle is a common oxygen discharge channel for discharging oxygen discharged from the first and second discharge plasma processing units 112a and 112b to the outside of the gas processing apparatus 131, and 134a is A first oxygen discharge flow path 134b for discharging oxygen discharged from the first discharge plasma processing unit 112a to the outside of the gas processing device 131, a gas 134b is used for discharging oxygen discharged from the second discharge plasma processing unit 112b. A second oxygen discharge channel for discharging to the outside of the processing device 131,
135 is a fifth pump provided in the middle of the common oxygen discharge channel 134 for sucking oxygen flowing through the common oxygen discharge channel 134, and 136 is a first oxygen discharge channel 117a provided in the first oxygen discharge channel 117a. A second three-way cock 137 for connection to the passage 134a or to the first treated gas passage 120a.
Connects the second common flow path 117b to the second oxygen discharge flow path 134.
b or a third three-way cock 138 for connecting to the second processed gas flow path 120b connects the common oxygen flow path 134 to the first oxygen discharge flow path 134a or the second oxygen discharge flow path 134b. Is a fourth three-way cock.

In this case, the ozone produced by the ozonizer 115 is introduced into the common processing gas channel 113 through the ozone channel 116 using the air introduced through the oxygen source channel 132 as the oxygen source.

In this case, the oxygen discharged from the first discharge plasma processing section 112a is supplied to the first common flow path 117.
a, flows through the first oxygen discharge flow path 134a connected by the second three-way cock 136, and the common oxygen discharge flow path 134 connected by the fourth cock 138;
1 and discharged to the outside of the second discharge plasma processing unit 112.
b discharged from the second common flow channel 117b,
Flows through the second oxygen discharge flow path 134b connected by the three-way cock 137 and the common oxygen discharge flow path 134 connected by the fourth cock 138, and is discharged to the outside of the gas treatment device 131.

Further, as shown in Embodiment 6, a discharge plasma apparatus having two discharge plasma processing sections is configured so that oxygen produced by an oxygen production apparatus is used as an oxygen source for an ozonizer (FIG. 18). See also), the same effect can be obtained. In FIG. 18, 141 is a gas processing device,
2 is an oxygen production apparatus, 143 is an oxygen source flow path for introducing oxygen discharged from the oxygen production apparatus 142 to the ozonizer 115 as an oxygen source, 144 is an air flow path for introducing air to the oxygen production apparatus 142, 145 is an air flow path 1 for sucking air from outside the gas processing device 141.
A sixth pump provided in the middle of 44.

In this case, the ozone produced by the ozonizer 115 is introduced into the common processing gas channel 113 through the ozone channel 116 by using the oxygen produced by the oxygen producing device 142 as the oxygen source.

In this case, similarly to the gas processing apparatus 131 shown in FIG. 17, the first discharge plasma processing section 112a
The oxygen discharged from the tub flows through a first common flow path 117a, a first oxygen discharge flow path 134a connected by a second three-way cock 136, and a common oxygen discharge flow path 134 connected by a fourth cock 138. The oxygen discharged to the outside of the gas processing apparatus 141 and discharged from the second discharge plasma processing unit 112b is supplied to the second common flow path 117b and the second oxygen discharge flow path connected by the third three-way cock 137. 134
b, flows through the common oxygen discharge channel 134 connected by the fourth cock 138, and is discharged to the outside of the gas processing device 141.

Further, a discharge plasma apparatus provided with two discharge plasma processing sections is configured to introduce nitrogen gas discharged from the oxygen production apparatus into the discharge plasma processing section, as shown in Embodiment 6. The same effect can be obtained by using FIG. In FIG. 19, reference numeral 151 denotes a gas processing device, 152 denotes an oxygen production device that discharges nitrogen during oxygen production (reducing gas production device, regenerative gas production device / oxygen production device), and 153 denotes an oxygen production device 152. Nitrogen is supplied to the first and second discharge plasma processing units 112a, 112
153a is a first nitrogen flow path for introducing nitrogen discharged from the oxygen production apparatus 152 to the first discharge plasma processing unit 112a,
3b is a second nitrogen flow path for introducing nitrogen discharged from the oxygen production apparatus 152 into the second discharge plasma processing section 112b, and 154 is a common nitrogen flow path 153 for the first nitrogen flow path 153a or the second nitrogen flow path. A fifth three-way cock for connecting to the second oxygen discharge channel 153b.

In this case, the ozone produced by the ozonizer 115 is introduced into the common processing gas channel 113 through the ozone channel 116 using the oxygen produced by the oxygen producing apparatus 152 as an oxygen source, and the first discharge plasma processing section 1
At the time of the discharge plasma processing of 12a, nitrogen discharged from the oxygen production apparatus 152 is introduced into the first discharge plasma processing unit 112a through the first nitrogen flow path 153a connected by the common nitrogen flow path 153 and the fifth three-way cock 154. Then, during the discharge plasma processing of the second discharge plasma processing unit 112b, the nitrogen discharged from the oxygen production apparatus 152 passes through the second nitrogen flow path 153b connected by the common nitrogen flow path 153 and the fifth three-way cock 154. 1 into the discharge plasma processing unit 112a.

In this case, similarly to the gas processing apparatus 131 shown in FIG. 17, the first discharge plasma processing section 112a
The oxygen discharged from the tub flows through a first common flow path 117a, a first oxygen discharge flow path 134a connected by a second three-way cock 136, and a common oxygen discharge flow path 134 connected by a fourth cock 138. The oxygen discharged to the outside of the gas processing device 151 and discharged from the second discharge plasma processing unit 112b is supplied to the second common flow path 117b and the second oxygen discharge flow path connected by the third three-way cock 137. 134
b, flows through the common oxygen discharge channel 134 connected by the fourth cock 138, and is discharged to the outside of the gas processing device 151.

Embodiment 9 FIG. FIG. 20 is a configuration diagram showing a gas processing apparatus according to Embodiment 9 of the present invention. FIG.
, 161 is a gas processing device, 162 is a discharge plasma processing unit, 163 is a processing gas tank (processing gas storage unit) storing processing gas collected from outside the gas processing device 161, 164 is a carrier gas tank (carrier gas tank) (Storage unit), 165 is an adsorption tower (component separation unit) for separating the processing gas into each component, 166 is a carrier gas flow path for introducing a carrier gas into the processing gas tank 164, and 167 is a carrier gas and processing gas A mixed gas flow path for introducing the mixed gas into the adsorption tower 165; a separation processing gas flow path for introducing the carrier gas and the processing gas separated into each component into the discharge plasma processing unit 162;
Reference numeral 169 denotes a discharge channel for discharging the gas discharged from the discharge plasma processing unit 162 to the outside of the gas processing device 161, and 170 denotes the concentration of each component contained in the processing gas flowing in the discharge channel 169. Sensor. Examples of the sensor 170 include an infrared absorption photometer and an ultraviolet absorption photometer.

The discharge plasma processing section in the gas processing apparatus according to the ninth embodiment is obtained by removing the adsorbent 39 from the discharge plasma processing section shown in FIG.

Next, the operation will be described. Here, a case where an air-based processing gas is used as the processing gas will be described.

When processing nitrogen oxides contained in the processing gas using the gas processing apparatus 161 according to the ninth embodiment, first, a carrier gas is introduced into the processing gas tank 163 through the carrier gas flow path 166. When a carrier gas is introduced into the processing gas tank 163, the processing gas is pushed out by the carrier gas, and a mixed gas of the processing gas and the carrier gas flows through the mixed gas flow path 167 to the adsorption tower 165.
And the processing gas is separated into each component in the adsorption tower 165. The components separated in the adsorption tower 165 sequentially exit from the adsorption tower 165 together with the carrier gas, and are introduced into the discharge plasma processing unit 162.

After that, nitrogen oxides among those separated in the adsorption tower 165 are subjected to discharge plasma treatment. For example,
If it is empirically known that the second and fourth components exiting the adsorption tower 165 are nitrogen oxides, this discharge plasma treatment is performed by using two of the components contained in the processing gas. This is performed while the fourth and fourth components exiting the adsorption tower 165 are detected by the sensor 170, that is, while the nitrogen oxides are detected by the sensor 170.

FIG. 21A shows the time t on the horizontal axis, and the concentration C of the component contained in the processing gas detected by the sensor 170 on the vertical axis, and FIG. FIG. 21 shows the presence / absence of the detection of the components contained in the gas.
(C) shows the presence or absence of detection of nitrogen oxides contained in the processing gas. When it is empirically known that the second and fourth components coming out of the adsorption tower 165 are nitrogen oxides, as shown in FIG. Among the components included in the discharge plasma processing unit 162, the second and fourth components that exit from the adsorption tower 165 are between t1 and t2 and between t3 and t4, Done.

As described above, according to the ninth embodiment, the processing gas tank 1 storing the processing gas that is the gas containing nitrogen oxides as the target of discharge plasma processing.
63, a separation tower 165 for separating the processing gas into components,
A carrier gas tank 164 storing a carrier gas for pushing out a processing gas stored in a processing gas tank 163 to a separation tower 165, and a discharge plasma processing unit for performing a discharge plasma processing of nitrogen oxides among those separated in the separation tower 165. Since 162 is provided, nitrogen oxides and oxygen are separated from each other, and an effect is obtained that is effective also in processing nitrogen oxides contained in the processing gas containing oxygen. In addition, among those separated by the separation tower 165, nitrogen oxide is subjected to discharge plasma treatment, and the discharge plasma treatment is intermittent, so that an effect of saving power can be obtained.

Further, according to the ninth embodiment, the separation tower 16
Since the discharge plasma treatment of the nitrogen oxides separated in step 5 is performed while the sensor 170 detects the nitrogen oxides separated in the separation tower 165, the discharge plasma treatment of the nitrogen oxides can be performed efficiently. The effect that can be obtained is obtained.

Further, according to the ninth embodiment, the discharge plasma processing section includes a flat high-voltage electrode, a flat ground electrode arranged at a predetermined distance from the high-voltage electrode, and
Since it has a dielectric positioned between the high-voltage electrode and the ground electrode and a discharge space sandwiched between the high-voltage electrode and the ground electrode, the electric field strength between the ground electrode and the high-voltage electrode And the amount of generated nitrogen atoms during the discharge plasma treatment is increased, and the effect of increasing the amount of nitrogen oxides to become nitrogen molecules and oxygen molecules is obtained.

Embodiment 10 FIG. FIG. 22 is an exploded perspective view showing a configuration of a discharge electrode in a gas processing apparatus according to Embodiment 10 of the present invention. FIG. 23 is a sectional view showing a configuration of a discharge electrode in a gas processing apparatus according to Embodiment 10 of the present invention. 22 and 23, 1
81 is a discharge electrode, 182 is an annular flat ceramic plate (dielectric) having an outer diameter of 7 cm or more and an inner diameter of about 3 cm,
Reference numeral 183 denotes a ring-shaped thin film high-voltage electrode having an outer diameter of about 7 cm and an inner diameter of about 3 cm formed by depositing gold on the surface of the ceramic plate 182 opposite to the ground electrode.
Numeral 84 denotes a cylindrical ground electrode having an outer diameter of about 7 cm and an inner diameter of about 3 cm arranged at a predetermined distance from the high-voltage electrode 183, and 185 a ground electrode 184.
3 and the ground electrode 18
A spacer 186 having a thickness of 1 mm arranged at a predetermined interval on the upper surface of the column 4 and comprising a column and a ring-shaped flat plate provided on the top thereof, formed integrally with the ground electrode 184; Is the high voltage electrode 183 and the ground electrode 184
And a discharge space between the two.

The discharge area of the discharge plasma processing unit in the gas processing apparatus according to the tenth embodiment is 1/10 of the discharge area of the discharge gas processing unit in the gas processing apparatus according to the ninth embodiment.

The total discharge power input per unit gas amount is kept constant, and the nitrogen oxide concentration is 200 ppm.
Is supplied at a constant flow rate to the discharge plasma processing unit in the gas processing apparatus according to the tenth embodiment and the discharge gas processing unit in the gas processing apparatus according to the ninth embodiment to perform discharge plasma processing. Was.

In the discharge plasma processing in the discharge plasma processing section of the gas processing apparatus according to the tenth embodiment, the passage time of the reference gas in the discharge space (discharge space residence time), that is, the time during which the reference gas receives discharge is 1 millisecond. And the concentration of the generated N ₂ O was 22 ppm.

In the discharge plasma processing in the discharge plasma processing unit in the gas processing apparatus according to the tenth embodiment, the passage time of the reference gas through the discharge space (discharge space residence time), that is, the time during which the reference gas receives discharge, is reduced. 10 ms, and the concentration of the generated N ₂ O was 33 ppm.

As described above, the longer the residence time in the discharge space, the higher the concentration of the generated N ₂ O is. The longer the residence time in the discharge space, the more nitrogen atoms are dissociated by the corona discharge after the nitrogen molecules are dissociated. Receiving high discharge energy, N
_It is thought to contribute to the generation of ₂ O.

As described above, according to the tenth embodiment, assuming that the passage time of the processing gas, which is the gas containing nitrogen oxides as the object of discharge plasma processing, in the discharge space is 1 millisecond or less, N ₂ The effect that the generation of O can be suppressed low can be obtained.

[0124]

As described above, according to the present invention, the gas processing apparatus comprises: a flat high-voltage electrode; a flat ground electrode disposed at a predetermined distance from the high-voltage electrode; A dielectric positioned between the voltage electrode and the ground electrode, a discharge space sandwiched between the high-voltage electrode and the ground electrode, and an adsorbent that adsorbs nitrogen oxides and does not adsorb oxygen disposed in the discharge space. Is configured to include a discharge plasma processing section having a nitrogen gas, the nitrogen oxides contained in the processing gas are adsorbed by the adsorbent, whereby nitrogen oxides and oxygen are separated, and the processing gas containing oxygen is separated. Has an effect which is effective also in the treatment of nitrogen oxides contained in the steel. Further, when the adsorbent is saturated with the nitrogen oxide, the nitrogen oxide is subjected to the discharge plasma treatment, so that the discharge plasma treatment is intermittent and the power can be saved.

According to the present invention, the distance between the high-voltage electrode and the ground electrode is set to 1 mm or less, so that the electric field strength between the ground electrode and the high-voltage electrode increases, and This has the effect of increasing the amount of generated nitrogen atoms and increasing the amount of nitrogen oxides to become nitrogen molecules and oxygen molecules. Further, the AC voltage applied to the high-voltage electrode is about 6 kV at a zero-peak value, which has the effect of saving power.

According to the present invention, since the dielectric is formed in the form of a film on the surface of the high voltage electrode on the ground electrode side, the voltage drop due to the dielectric is reduced, and the electric field strength of the discharge space is increased. Has an effect

According to the present invention, since the discharge plasma processing section is configured to include a plurality of discharge spaces in a direction perpendicular to the high voltage electrode or the ground electrode, the effect of increasing the discharge plasma processing amount at the time of discharge plasma processing is obtained. is there.

According to the present invention, there is provided an ozone producing apparatus for supplying ozone to a processing gas flow path for introducing a processing gas which is a gas containing nitrogen oxides as a discharge plasma processing target into a discharge plasma processing section. When the processing gas contains nitrogen monoxide, which is a nitrogen oxide, the nitric oxide is oxidized to nitrogen dioxide, which is a nitrogen oxide that is easily adsorbed by the adsorbent. Has the effect of increasing.

According to the present invention, the ozone producing apparatus is configured so that oxygen contained in the processing gas, which is not adsorbed by the adsorbent when the nitrogen oxide is adsorbed on the adsorbent, is used as the oxygen source. There is an effect that oxygen contained in the processing gas can be effectively used.

According to the present invention, since the reducing gas producing apparatus for supplying the reducing gas to the discharge plasma processing section is provided, the amount of generated nitrogen atoms during the discharge plasma processing increases, and the nitrogen oxides are reduced. This has the effect of increasing the amount of nitrogen and oxygen molecules.

According to the present invention, the apparatus is provided with a nitrogen producing apparatus and an oxygen producing apparatus for supplying oxygen to the ozone producing apparatus and supplying nitrogen discharged during the production of oxygen to the discharge plasma processing section. There is an effect that the equipment to be supplied to the discharge plasma processing unit can be simplified.

According to the present invention, the first discharge plasma processing section and the second discharge plasma processing section are provided, and the adsorbent of the second discharge plasma processing section is used during the discharge plasma processing in the first discharge plasma processing section. Nitrogen gas is adsorbed on the first discharge plasma processing unit, and the nitrogen oxide is adsorbed on the adsorbent of the first discharge plasma processing unit during the discharge plasma processing in the second discharge plasma processing unit. There is an effect that nitrogen oxides can be continuously treated.

According to the present invention, all the nitrogen oxides adsorbed on the adsorbent of the first discharge plasma processing section or at the saturation point when the adsorbent of the first discharge plasma processing section is saturated are processed. A first sensor for detecting a processing end time point, which is a time point, and a nitrogen oxidation adsorbed on the adsorbent of the second discharge plasma processing section or at a saturation time when the adsorbent of the second discharge plasma processing section is saturated. A second sensor for detecting a processing end time when all the objects have been processed, and switching from discharge plasma processing in the first discharge plasma processing unit to discharge plasma processing in the second discharge plasma processing unit. Is performed when the first sensor detects the processing end time point or when the second sensor detects the saturation time point, and performs the discharge plasma processing in the second discharge plasma processing unit. Since the switching to the discharge plasma processing in the first discharge plasma processing section is performed when the second sensor detects the processing end point or when the first sensor detects the saturation point, Switching from discharge plasma processing in the discharge plasma processing section to discharge plasma processing in the second discharge plasma processing section or from discharge plasma processing in the second discharge plasma processing section to discharge plasma processing in the first discharge plasma processing section There is an effect that switching can be performed efficiently.

According to the present invention, a processing gas storage section storing a processing gas which is a gas containing nitrogen oxides as a discharge plasma processing object, a component separating section for separating the processing gas into components, A carrier gas storage unit that stores the carrier gas that pushes the processing gas stored in the processing gas storage unit to the component separation unit, and a discharge plasma that performs a discharge plasma treatment on nitrogen oxides among those separated by the component separation unit. With the configuration including the processing section, nitrogen oxides and oxygen are separated, and there is an effect that the processing is effective also for the processing of nitrogen oxides contained in the processing gas containing oxygen. Also,
Of the components separated by the component separation section, nitrogen oxides are subjected to discharge plasma processing, and the discharge plasma processing is intermittent, so that power can be saved.

According to the present invention, a sensor for detecting nitrogen oxides discharged from the discharge plasma processing section is provided, and the discharge plasma processing of nitrogen oxides is performed while the sensor detects nitrogen oxides. Therefore, there is an effect that discharge plasma treatment of nitrogen oxides can be efficiently performed.

According to the present invention, the discharge plasma processing section includes a flat high-voltage electrode, a flat ground electrode arranged at a predetermined distance from the high-voltage electrode, and a high-voltage electrode and a ground electrode. And a discharge space sandwiched between the high-voltage electrode and the ground electrode, so that the electric field strength between the ground electrode and the high-voltage electrode is increased, and the discharge plasma processing is performed. This has the effect of increasing the amount of nitrogen atoms generated at the time, and increasing the amount of nitrogen oxides to become nitrogen molecules and oxygen molecules.

According to the present invention, the planar high-voltage electrode, the planar ground electrode arranged at a predetermined distance from the high-voltage electrode, and the dielectric located between the high-voltage electrode and the ground electrode Body, and a discharge plasma processing unit having a discharge space sandwiched between a high-voltage electrode and a ground electrode, and a passage time of the processing gas, which is a gas containing nitrogen oxides, as a discharge plasma processing target in the discharge space. Since the configuration is made to be 1 millisecond or less, there is an effect that generation of N ₂ O can be suppressed low.

[Brief description of the drawings]

FIG. 1 is a configuration diagram showing a gas processing apparatus according to Embodiment 1 of the present invention.

FIG. 2 is a configuration diagram showing a discharge plasma processing unit in the gas processing apparatus according to Embodiment 1 of the present invention.

FIG. 3 is an exploded perspective view showing a configuration of a discharge electrode in the gas processing apparatus according to Embodiment 1 of the present invention.

FIG. 4 is a perspective view showing a state in which an adsorbent is arranged on a ground electrode constituting a discharge electrode.

FIG. 5 is a characteristic diagram showing a relationship between a reduced electric field intensity and an amount of generated nitrogen atoms.

FIG. 6 is a characteristic diagram showing a relationship between a product of a gas density and a distance between electrodes and a discharge voltage.

FIG. 7 is an exploded perspective view showing a configuration of a discharge electrode in a discharge plasma processing unit included in a gas processing apparatus according to Embodiment 2 of the present invention.

FIG. 8 is a cross-sectional view showing a state in which a dielectric film is coated on the surface of the high-voltage electrode constituting the discharge electrode on the ground electrode side.

FIG. 9 is a configuration diagram showing a discharge plasma processing unit in a gas processing apparatus according to Embodiment 3 of the present invention.

FIG. 10 is a perspective view showing a state in which a dielectric film is coated on both surfaces of a high-voltage electrode constituting a discharge electrode.

FIG. 11 is a configuration diagram showing a discharge plasma processing unit included in a gas processing apparatus according to Embodiment 4 of the present invention.

FIG. 12 is a configuration diagram showing a gas processing apparatus according to Embodiment 5 of the present invention.

FIG. 13 is a configuration diagram showing a gas processing apparatus according to Embodiment 6 of the present invention.

FIG. 14 is a configuration diagram showing a gas processing apparatus according to Embodiment 7 of the present invention.

FIG. 15 is a configuration diagram showing a gas processing apparatus according to Embodiment 8 of the present invention.

FIG. 16 is a characteristic diagram showing a time change of a nitrogen oxide concentration.

FIG. 17 is a configuration diagram illustrating a first modification of the gas processing apparatus according to the eighth embodiment of the present invention.

FIG. 18 is a configuration diagram showing a second modification of the gas processing apparatus according to the eighth embodiment of the present invention.

FIG. 19 is a configuration diagram showing a third modification of the gas processing apparatus according to the eighth embodiment of the present invention.

FIG. 20 is a configuration diagram showing a gas processing apparatus according to Embodiment 9 of the present invention.

FIG. 21A is a characteristic diagram showing time t on the horizontal axis and concentration C of a component contained in the processing gas detected by the sensor on the vertical axis, and FIG. It is a characteristic diagram showing the presence or absence of detection of components contained in the gas,
(C) is a characteristic diagram showing the presence or absence of detection of nitrogen oxides contained in the processing gas.

FIG. 22 is an exploded perspective view showing a configuration of a discharge electrode in a gas processing apparatus according to Embodiment 10 of the present invention.

FIG. 23 is a sectional view showing a configuration of a discharge electrode in a gas processing apparatus according to Embodiment 10 of the present invention.

FIG. 24 is a perspective view showing a configuration of a discharge electrode in a conventional gas processing apparatus.

[Explanation of symbols]

1,81,91,101,111,131,141,1
51,161 gas treatment device, 2,51,61,162
Discharge plasma processing section, 3 processing gas flow path, 5,115
Ozonizer (ozone production device), 31,182 Ceramic plate (dielectric), 32,42,53,183 High voltage electrode, 33,64,184 Ground electrode, 38,18
7 discharge space, 39 adsorbent, 43 dielectric film (dielectric), 54a first dielectric film (dielectric), 54b second dielectric film (dielectric), 55a first ground electrode (ground electrode) ), 55b Second ground electrode (ground electrode), 58
a, 70a First discharge space (discharge space), 58b, 7
0b Second discharge space (discharge space), 59a, 71a
First adsorbent (adsorbent), 59b, 71b Second adsorbent (adsorbent), 66a First ceramic plate (dielectric), 66b Second ceramic plate (dielectric), 67a
A first high-voltage electrode (high-voltage electrode), 67b a second high-voltage electrode (high-voltage electrode), 102,152 oxygen generator (nitrogen generator, nitrogen generator and oxygen generator);
112a first discharge plasma processing unit, 112b second
Discharge plasma processing unit, 113 common processing gas flow path (processing gas flow path), 122 first three-way cock (switching means), 126a first sensor, 126b second sensor, 163 processing gas tank (processing gas storage unit) ), 16
4 Carrier gas tank (carrier gas storage), 16
5 Adsorption tower (component separation unit), 170 sensors.

Continuation of the front page (51) Int.Cl. ⁶ Identification code FI C01B 13/10 B01D 53/34 129A 21/02 (72) Inventor Seiji Noda 2-3-2 Marunouchi 2-chome, Chiyoda-ku, Tokyo Mitsubishi Electric Corporation (72) Inventor Arcady Gul 2-3-2 Marunouchi, Chiyoda-ku, Tokyo Mitsubishi Electric Corporation

Claims (14)

[Claims] A planar high-voltage electrode; a planar ground electrode disposed at a predetermined distance from the high-voltage electrode;
A dielectric located between the high voltage electrode and the ground electrode;
A gas processing apparatus including a discharge plasma processing unit having a discharge space interposed between the high-voltage electrode and the ground electrode, and an adsorbent disposed in the discharge space that adsorbs nitrogen oxides and does not adsorb oxygen. . 2. The distance between a high voltage electrode and a ground electrode is 1 m.
2. The gas processing apparatus according to claim 1, wherein m is equal to or less than m. 3. The gas processing apparatus according to claim 1, wherein the dielectric is formed in a film shape on the surface of the high voltage electrode on the ground electrode side. 4. The gas processing apparatus according to claim 1, wherein the discharge plasma processing section has a plurality of discharge spaces in a direction perpendicular to the high voltage electrode or the ground electrode. 5. An ozone producing apparatus for supplying ozone to a processing gas flow path for introducing a processing gas which is a gas containing nitrogen oxides as a discharge plasma processing target into a discharge plasma processing section. The gas processing apparatus according to claim 1, wherein 6. The ozone producing apparatus uses oxygen contained in the processing gas, which is not adsorbed by the adsorbent when the nitrogen oxide is adsorbed on the adsorbent, as an oxygen raw material. 6. The gas processing apparatus according to 5. 7. The gas processing apparatus according to claim 1, further comprising a reducing gas producing apparatus for supplying a reducing gas to the discharge plasma processing section. 8. An ozone producing apparatus for supplying ozone to a processing gas flow path for supplying a processing gas which is a gas containing nitrogen oxides as a discharge plasma processing target to a discharge plasma processing section, and the ozone producing apparatus. 2. The gas processing apparatus according to claim 1, further comprising a nitrogen production apparatus and an oxygen production apparatus that supplies oxygen to the discharge plasma processing unit and supplies nitrogen discharged during oxygen production to the discharge plasma processing unit. 9. A flat high-voltage electrode, a flat ground electrode disposed at a predetermined distance from the high-voltage electrode,
A dielectric located between the high voltage electrode and the ground electrode;
A first discharge plasma processing unit including a discharge space interposed between the high-voltage electrode and the ground electrode, and a first discharge plasma treatment unit having a discharge space and an adsorbent that adsorbs nitrogen oxides and does not adsorb oxygen. A discharge plasma processing unit, wherein the first discharge plasma processing unit adsorbs nitrogen oxide on an adsorbent of the second discharge plasma processing unit during the discharge plasma processing, and the second discharge plasma processing unit Wherein the nitrogen oxides are adsorbed on the adsorbent of the first discharge plasma processing section at the time of the discharge plasma processing. 10. A process at a saturation point when the adsorbent in the first discharge plasma processing section is saturated or a point in time when all the nitrogen oxides adsorbed by the adsorbent in the first discharge plasma processing section have been processed. The first sensor for detecting the end point and the nitrogen oxides adsorbed by the adsorbent of the second discharge plasma processing section are all processed at the saturation point when the adsorbent of the second discharge plasma processing section is saturated or A second sensor for detecting a processing end time point, which is a time point when the discharge plasma processing in the first discharge plasma processing unit is switched to the discharge plasma processing in the second discharge plasma processing unit. This is performed when the first sensor detects the processing end point or when the second sensor detects the saturation point, and performs the discharge plasma processing in the second discharge plasma processing unit. Switching to discharge plasma processing in the first discharge plasma processing unit is performed when the second sensor detects a processing end time or when the first sensor detects a saturation time. The gas processing apparatus according to claim 9, wherein 11. A processing gas storage unit for storing a processing gas which is a gas containing nitrogen oxides as a discharge plasma processing target, a component separation unit for separating the processing gas into components, and a processing gas storage unit. A carrier gas storage section in which a carrier gas is pushed to push out the processing gas stored in the component separation section to the component separation section, and a discharge plasma processing in which nitrogen oxides are discharged plasma-processed from those separated in the component separation section. Gas processing device provided with a part. 12. A sensor for detecting nitrogen oxides discharged from a discharge plasma processing unit, wherein the discharge plasma processing of nitrogen oxides is performed while the sensor detects nitrogen oxides. The gas processing apparatus according to claim 11, wherein 13. A discharge plasma processing section comprising: a planar high-voltage electrode; a planar ground electrode disposed at a predetermined distance from the high-voltage electrode; and a high-voltage electrode and the ground electrode. The gas processing apparatus according to claim 11, further comprising: a dielectric positioned between the high-voltage electrode and the ground electrode; and a discharge space interposed between the high-voltage electrode and the ground electrode. 14. A planar high-voltage electrode, a planar ground electrode disposed at a predetermined distance from the high-voltage electrode, and a dielectric material located between the high-voltage electrode and the ground electrode. And a discharge plasma processing section having a discharge space sandwiched between the high-voltage electrode and the ground electrode, wherein a processing gas that is a gas containing nitrogen oxides as a target of discharge plasma processing passes through the discharge space. A gas processing device, wherein the time is 1 millisecond or less.