JPH11230737A - Appearance inspection device for semiconductor substrate - Google Patents

Abstract

PROBLEM TO BE SOLVED: To accurately inspect the dispersion of the height of a solder ball by holding a sensor head at a fixed position at all times to a semiconductor substrate which is a measurement object. SOLUTION: In this appearance inspection device of a semiconductor substrate provided with a detection part 1 on a scanning stage 5 for scanning the semiconductor substrate 10 by the detection part 1, while moving the scanning stage 5 in a scanning direction at a fixed speed and detecting the appearance shape of the semiconductor substrate 10, plural freely extendable and contractible supporting means 6a-6f and an extension/contraction driving means 61 for extending and contracting the supporting means 6a-6f are provided and the detection part 1 is supported on the scanning stage 5 through the supporting means 6a-6f.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention has a detection section on a coarse movement stage which moves in the scanning direction, and scans the semiconductor substrate by the detection section while moving the coarse movement stage in the scanning direction. The present invention relates to a semiconductor substrate appearance inspection device for inspecting a shape.

[0002]

2. Description of the Related Art Conventionally, there has been known a semiconductor substrate appearance inspection apparatus for performing an appearance inspection of a semiconductor substrate. In the appearance inspection of the semiconductor substrate, for example, as shown in FIG. 5, the height of a plurality of solder balls 111 bonded to the back surface 110A of the semiconductor substrate (measurement target) 110 (the height from the back surface 110A to the top of the solder ball 111). ) Is measured, and the appearance of the semiconductor substrate 110 is inspected from the variation of the measurement result.

A semiconductor substrate 110 is set in an opening 112A of a top plate 112 with a back surface 110A facing down.
A sensor head (detection unit) 101 is provided below the semiconductor substrate 110.
1 is moved in parallel in the front-rear direction (the left-right direction in FIG. 5) so as to face the rear surface 110A, and the semiconductor substrate 1 is moved by a plurality of eddy current displacement meters 101a provided in the sensor head 101.
The solder balls 111 adhered to the back surface 110A of the substrate 10 are sequentially scanned. Thereby, the distance between the sensor head 101 and the top of the solder ball 111 is measured, and the height of the solder ball 111 is measured relatively.

[0004] The sensor head 101 is fixed on a sensor base 102, and furthermore, the sensor base 102
Is fixed on the scanning stage 105, so that the movement of the sensor head 101 in the front-back direction
Is performed by rotating the ball screw 109 by the servo motor 108 to move the device table 113 in the front-rear direction. Also, in FIG.
14 is a side plate, and 115 is a base plate.

[0005]

However, in the above-described conventional semiconductor substrate appearance inspection apparatus, the sensor head 101 is integrally fixed to the scanning stage 105. Scan surface) is always constant. Therefore, the semiconductor substrate 1
If the sensor 10 is not arranged in parallel with the scanning surface at the time of setting, the distance between the sensor head 101 and the back surface 110A of the semiconductor substrate 110 changes depending on the position in the front-rear direction. Therefore, the sensor head 101 and the solder ball 1
An error also occurs in the measurement of the distance between the solder ball 111 and the apex of the solder ball 111, and there is a problem that the variation in the height of the solder ball 111 cannot be accurately inspected.

Further, if the measurement is started, the semiconductor substrate 110
Even if are set in parallel, the semiconductor substrate 110 and the scanning surface may be displaced during the measurement, and the conventional semiconductor substrate appearance inspection apparatus has a means for correcting the displacement in such a case. Without solder balls 111
There is also a problem that it is not possible to inspect variations in height.

SUMMARY OF THE INVENTION The present invention has been made in view of the above-described problems, and by constantly holding a sensor head at a fixed position with respect to a semiconductor substrate to be measured, the variation in the height of solder balls can be accurately reduced. An object of the present invention is to provide a semiconductor substrate appearance inspection device capable of inspecting.

[0008]

According to a first aspect of the present invention, there is provided an apparatus for inspecting the appearance of a semiconductor substrate, comprising: a detecting section on a scanning stage; In a semiconductor substrate appearance inspection apparatus that scans a semiconductor substrate with the detection unit and detects an external shape of the semiconductor substrate while moving the semiconductor device at a constant speed, a plurality of expandable and contractible support units and an expansion and contraction drive that expands and contracts the support units Means for supporting the detection unit on the scanning stage via the support means.

According to a second aspect of the present invention, there is provided an apparatus for inspecting the appearance of a semiconductor substrate according to the present invention, comprising: detecting means for detecting an attitude of the detecting section with respect to the scanning stage; and control for setting a target attitude of the detecting section with respect to the coarse moving stage. The control means controls the expansion / contraction drive means so that the attitude of the detection unit detected by the detection means is equal to the target attitude.

[0010]

Embodiments of the present invention will be described below with reference to the drawings. 1 to 4 show a semiconductor substrate appearance inspection apparatus as one embodiment of the present invention.
Is a schematic side view showing the configuration, FIG. 2 is a schematic view for explaining a geometrical positional relationship of the sensor stage with respect to the scanning stage, and FIG. 3 is a schematic view showing an arrangement of a capacitance type displacement meter on a sensor holder. FIG. 4 is a functional block diagram showing the configuration of the semiconductor substrate appearance inspection apparatus.

First, the structure of the semiconductor substrate appearance inspection apparatus will be described. As shown in FIG. 1, the semiconductor substrate 10 has a rear surface 1 similar to a conventional semiconductor substrate appearance inspection apparatus.
The sensor head (detection unit) 1 is disposed below the opening 12A of the top plate 12 with 0A as the lower side. A plurality of eddy current type displacement meters 1a are provided on the sensor head 1 in the moving direction of the sensor head 1 (FIG.
Are arranged in two rows in a zigzag pattern at right angles to the right and left directions (in the thickness direction of the paper), and by moving the sensor head 1 in parallel with the back surface 10A of the semiconductor substrate (measurement target) 10, the semiconductor substrate 10 The plurality of solder balls 11 bonded to the back surface 10A are sequentially scanned to detect the distance to the top of the solder ball 11. The distance to the solder ball 11 detected by the eddy current displacement meter 1a is amplified by an eddy current displacement meter amplifier 22 and input to a controller 23, as shown in FIG.

The sensor head 1 is mounted on a scanning stage (coarse movement stage) 5 similarly to a conventional semiconductor substrate appearance inspection apparatus, and moves the scanning stage 5 in the front-rear direction (left-right direction in FIG. 1). As a result, the semiconductor substrate 10 can be moved integrally, so that the semiconductor substrate 10 can be scanned in the front-back direction. Further, the sensor head 1 is fixed on a sensor base (fine movement stage) 2, but this sensor base 2 is not directly fixed to the scanning stage 5 as in the related art, but is mounted on the scanning stage 5 (FIG. 1). 6) (supporting means) 6a to 6f. In addition,
Except for one, each of the links 6a to 6f is schematically represented by an alternate long and short dash line indicating its central axis.

Each of the links 6a to 6f has a built-in piezoelectric element (expansion / contraction driving means) 61 pre-pressed by a compression spring 62. When the voltage input to the piezoelectric element 61 is increased, the spring force of the compression spring 62 is increased. , The piezoelectric element 61 is extended, the piston 63 is pushed up, and the links 6a to 6f are extended. Conversely, when the voltage is reduced, the piezoelectric element 61 is contracted by the spring force of the compression spring 62, the piston 63 is lowered, and the links 6a to 6f are also contracted. Since the amount of expansion and contraction of the piezoelectric element 61 is determined by the magnitude of the applied voltage, it is possible to adjust the links 6a to 6f to an arbitrary length by applying a voltage of an appropriate magnitude. The input of the voltage to the piezoelectric element 61 is adjusted by the controller (control means) 23 through the piezoelectric element drive amplifier 21.

The links 6a to 6f have rotatable elastic hinges 64 at both ends thereof, and are connected to the sensor base 2 and the scanning stage 5 by the elastic hinges 64. 5 can be set at an arbitrary angle. Therefore, by cooperatively expanding and contracting the links 6a to 6f, it becomes possible to cause the sensor base 2 to move the scanning stage 5 in three translational degrees and three rotational degrees of freedom.

The movement of the sensor base 2 having three degrees of freedom of translation and three degrees of rotation will be described in detail with reference to FIG. As shown in FIG. 2, a coordinate system 0 _B -xyz is set using the scanning stage 5 as an xy plane, and the sensor base 2 is defined as x ′.
y takes a 'coordinate system 0 _E -x'y'z as a plane', the translational displacement and rotational displacement of the coordinate system 0 _E -x'y'z 'with respect to the coordinate system _{0 B -xyz (X 0, Y} 0, Z ₀ , θ _x ,
θ _y , θ _z ). However, the traveling direction of the scanning stage 5 is the y-axis.

At this time, the coordinate system 0_E−x′y′z ′
Point (X ', Y', Z ') is in coordinate system 0 _BOn -xyz,
It is expressed as follows.

[0017]

(Equation 1)

Where n_x, N_y, N_zIs x on the x 'axis,
the direction cosine for the y and z axes, o_x, O _y, O_zIs the y 'axis
The direction cosine of the x, y, and z axes, a_x, A_y, A_zIs
The direction cosine of the z 'axis with respect to the x, y, and z axes.
Are all θ_x, Θ_y, Θ_zCan be represented as a function of
You. Here, the coordinate system 0_BThe fixed point B (X_B, Y
_B, Z_B) And the coordinate system 0_EFixed point at −x′y′z ′
E (X_E', Y_E', Z_E'), The point E
(X _E', Y_E', Z_E') To coordinate system 0_B-Xyz
Coordinates (X_E, Y_E, Z_E) Is as shown in equation (1).
To X₀, Y₀, Z₀, Θ_x, Θ_y, Θ_zTable as a function of
If the distance from point B to point E is L, then L = | (X_E, Y_E, Z_E)^T− (X_B, Y_B, Z_B)
^T|, The distance L is also X₀, Y₀, Z₀, Θ_x, Θ_y,
θ_zCan be represented by

Therefore, the connection points between the links 6a to 6f, the sensor base 2 and the scanning stage 5 are respectively designated by E _i.
(X _i ′, Y _i ′, Z _i ′) (i = 1, 2,...,
6), B _i (X _i , Y _i , Z _i ) (i = 1, 2,...)
, 6), and if these coordinates are known, the relative displacement (X ₀ ,
By giving Y ₀ , Z ₀ , θ _x , θ _y , θ _z ), the length L _i (i = 1, 2,..., 6) of each of the links 6 a to 6 f is obtained.
Can be requested.

Next, the relative displacements (X ₀ , Y ₀ , Z ₀ ,
The following describes how θ _x , θ _y , θ _z ) are measured by measuring the translation and rotational displacement of the target 3 provided at the lower part of the sensor base 2 as follows. It is supposed to do it. As shown in FIG. 3, the target 3 has a coordinate system 0 _{E of the} sensor base 2.
A measurement plane 3A parallel to the x'y 'plane of -x'y'z',
It is a member having a measurement surface 3B parallel to the y'z 'plane and a measurement surface 3C parallel to the z'x' plane. As shown in FIG. 1, its vertical center axis coincides with the z 'axis. So that it is fixed below the sensor base 2.

On the other hand, a sensor holder 4 is provided on the scanning stage 5. This sensor holder 4 has six capacitive displacement meters (detection means) 7a, 7b, 7c, 7d,
7e and 7f are provided. As shown in FIG. 3, the capacitance type displacement meter 7a is disposed in parallel with the x axis, and the capacitance type displacement meters 7b and 7c are respectively provided in parallel with the y axis. In addition, they are arranged so as to be arranged on a plane parallel to the xy plane.
Further, the capacitance type displacement meters 7d, 7e, 7f are respectively z
The capacitance type displacement meters 7d and 7e are arranged on a plane parallel to the yz plane, and the capacitance type displacement meters 7d and 7f are arranged on a plane parallel to the zx plane. It is arranged as follows.

The capacitance type displacement meters 7a to 7a
The target 3 is arranged in a space surrounded by 7f. However, target 3 and sensor holder 4
Is in a non-contact state, and the target 3 is the sensor holder 4
It can be freely translated and rotated without being restrained by the robot. At this time, the relative displacement of each measurement surface 3A, 3B, 3C of the target 3 with respect to the sensor holder 4 is detected by the capacitance type displacement meters 7a to 7f, amplified by the capacitance type displacement meter amplifier 20, and then amplified by the controller 23. To be entered. The controller 23 calculates the relative displacement of the sensor base 2 with respect to the scanning stage 5 based on the displacement of each of the measurement surfaces 3A, 3B, 3C.

[0023] That is, displacement in the x-axis direction of the measuring surface B by detecting the displacement d _a capacitive displacement gauge 7a is detected, the electrostatic capacity type displacement gauge 7b, the detection displacement d _b of 7c, the d _c The displacement of the measurement surface C in the y-axis direction and the rotation around the z-axis are detected. In addition, the capacitance type displacement meter 7
d, 7e, detected displacement _d d of 7f, d _e, displacement in the z-axis direction of the measuring surface 3A by d _f is detected, the electrostatic capacity type displacement gauge 7d, the detection displacement _d d of 7e, the d _e x about the axis rotation is detected, the rotation of the y-axis is adapted to be detected by the electrostatic capacitance type displacement gauge 7d, 7f of the detected displacement d _d, d _f.

For example, the distance between the capacitance type displacement meters 7b and 7c is _lbc , and the distance between the capacitance type displacement meters 7d and 7e is l.
_de , and the distance between the capacitance type displacement gauges 7d, 7f is l _df , the rotation angle φ _{x of} the target 3 around the x, y, z axes,
phi _y, phi _z are respectively φ _x = tan ^-1 _{[(d e -d d) / l} de ] φ _y = tan ^-1 _{[(d d -d f) / l} df ] φ _z = tan ^-1 [(D _c -d _b ) / l _bc ], and these rotation angles φ _x , φ _y , φ _z are the rotational displacements θ _x , of the sensor base 2 with respect to the scanning stage 5.
coincides with θ _y and θ _z . Similarly, translational displacement X ₀ to the scanning stage 5 of the sensor base 2, Y _0, Z ₀ also, the detected displacement _{d a, d b, d c} , d d, d e, d f and the rotational angle φ
_x, φ _y, it can be geometrically calculated by the phi _z.

As described above, the relative displacement (X ₀ , Y ₀ , Z ₀ , θ _x ,
θ _y , θ _z ) can be measured. As shown in FIG. 4, the controller 23 feeds back the calculated relative displacement of the sensor base 2 with respect to the scanning stage 5 to the expansion and contraction adjustment of the links 6a to 6f. That is, the target relative displacement is compared with the relative displacement calculated from the detection results of the capacitance type displacement meters 7a to 7f, and a control signal corresponding to the difference is output to the piezoelectric element drive amplifier 21. I have. The piezoelectric element drive amplifier 21 adjusts the amount of voltage applied to the piezoelectric element 61 of each of the links 6a to 6f in accordance with a control signal from the controller 23, and adjusts each of the links 6a to 6f to achieve the target relative displacement.
The length of f is adjusted to expand and contract.

On the other hand, as shown in FIG.
Is engaged with the ball screw 9 extending in the y-axis direction on the device table 13 and moves on the device table 13 in the y-axis direction by driving the servo motor 8 to rotate the ball screw 9. It has become. The servo motor 8 is driven by the controller 2 through the servo amplifier 24.
3 is performed by a control signal.
In FIG. 1, reference numeral 14 denotes a side plate, and 15 denotes a base plate.

Since the semiconductor substrate appearance inspection apparatus according to one embodiment of the present invention is configured as described above, the semiconductor substrate appearance inspection is performed according to the following procedure. First, after the semiconductor substrate 10 is set in the opening 12A of the top plate 12 with the back surface 10A facing down, prior to starting the inspection, the plurality of eddy current displacement meters 1a provided in the sensor head 1 are set. The distance from the solder ball 11 is measured by three predetermined eddy current displacement meters 1a. However, it is assumed that the three eddy current type displacement meters 1a which are determined in advance are not on a straight line.

The distance from the solder ball 11 measured by the eddy current type displacement meter 1a is amplified by the eddy current type displacement meter amplifier 22 and output to the controller 23.
The attitude of the sensor head 1 is adjusted so that the output values of the two eddy current displacement meters 1a become equal to each other. This posture adjustment is performed by adjusting the voltage value applied to the piezoelectric element 61 of each of the links 6a to 6f from the controller 23 through the piezoelectric element drive amplifier 21 to adjust the length of each of the links 6a to 6f.

While the attitude of the sensor head 1 is being adjusted,
The target 3 fixed to the sensor base 2 also changes its position and orientation relative to the sensor holder 4 fixed on the scanning stage 5.
Are detected by the six capacitive displacement gauges 7a to 7f built in, and are amplified by the capacitive displacement amplifier 20 and input to the controller 23.

The above-mentioned three eddy current type displacement meters 1a
At the time when the output values coincide with each other, the attitude adjustment of the sensor head 1 is completed.
Record each output value of f. The controller 23
The relative displacement (X ₀ , Y) of the sensor base 2 with respect to the scanning stage 5 based on the output values of the capacitance displacement meters 7 a to 7 f
₀ , Z ₀ , θ _x , θ _y , θ _z ), and this relative displacement is referred to as “reference displacement”, and the plane created by the sensor head 1 at this time is referred to as “reference plane”. In addition, each link 6 at this time
The length of a to 6f, that is, the length determined from the voltage value applied from the controller 23 to the piezoelectric element 61 of each link 6a to 6f through the piezoelectric element driving amplifier 21 is defined as a “reference length”.

When the setting of the “reference plane” is completed, the inspection starts. In this inspection, the scanning stage 5 is moved at a constant speed V in the y-axis direction, and the eddy current type displacement meter 1a provided for the sensor head 1 is used to move the solder ball 1 from the sensor head 1.
This is done by measuring the distance to 1. The movement of the scanning stage 5 in the y-axis direction is achieved by driving the servomotor 8 from the controller 23 through the servo amplifier 24 and rotating the ball screw 9 with which the scanning stage 5 meshes.

During the inspection, the sensor head 1
Sensor base 2 so that is always on the "reference plane"
Is performed. Here, the relative displacement of the sensor base 2 with respect to the "reference displacement" and the links 6a to 6f
Is represented by vectors ΔP, ΔL as follows: ΔP = (ΔX ₀ , ΔY ₀ , ΔZ ₀ , Δθ _x , Δθ _y , Δ
θ _z ) ^T ΔL = (ΔL ₁ , ΔL ₂ , ΔL ₃ , ΔL ₄ , ΔL ₅ , Δ
L ₆ ) ^T ΔP and ΔL have a one-to-one relationship, that is, each link 6a-6
When the length of f is determined, the relative displacement of the sensor base 2 with respect to the "reference displacement" is uniquely determined. Therefore, using a 6 × 6 matrix J representing a change in position and orientation with respect to a change in link length, the following expression is used. Can be represented.

ΔP = JΔL (2) From the equation (2), the request of the sensor base 2 for the “reference displacement” In order to realize the position and posture of
It is understood that the length of a to 6f should satisfy the following expression.
Here, J ⁻¹ is an inverse matrix of J. ΔL = J ⁻¹ ΔP (3) Relative of the sensor base 2 to the target “reference displacement” from equation (3) Displacements (ΔX ₀ , ΔY ₀ , ΔZ ₀ , Δθ _x ,
[Delta] [theta] _y, given the [Delta] [theta] _z), the target length of each link 6a~6f accordingly _{L i (i = 1,2, ···} ,
6) is determined. By voltage stretchable adjust the adjustment to each link 6a~6f the giving and the piezoelectric element 61 of each link 6a~6f corresponding to the target length L _i, the target "reference displacement" sensor with respect to the base 2 Is achieved.

In order for the sensor head 1 to always be located on the “reference plane”, the relative displacement ΔP of the sensor base 2 with respect to the “reference displacement” needs to satisfy the following equation. ΔP = (0,0,0,0,0,0) ^T (4) That is, the displacement of the sensor base 2 with respect to the scanning stage 5 is always the “reference displacement”. So that the sensor base 2
Is performed. Therefore, (3)
According to the equations (4) and (4), the extension and contraction are adjusted so that the length of each of the links 6a to 6f always matches the "reference length".

The length of each of the links 6a to 6f is adjusted by adjusting the voltage value applied to the piezoelectric element 61 incorporated in each of the links 6a to 6f by the controller 23 through the piezoelectric element driving amplifier 21. Performed by That is, the controller 23 is calculated from the relative displacement ΔP to be satisfied for the sensor head 1 shown in the equation (4) to always be located on the “reference plane” and the detection results of the capacitance type displacement meters 7a to 7f. The actual relative displacement is compared, and a control signal corresponding to the difference is output to the piezoelectric element drive amplifier 21. The piezoelectric element drive amplifier 21 adjusts the amount of voltage applied to the piezoelectric element 61 of each of the links 6a to 6f in accordance with a control signal from the controller 23, and adjusts the length of each of the links 6a to 6f to achieve a target relative displacement. I do.

In this manner, scanning is performed while holding the sensor head 1 on the "reference plane", and the eddy current type displacement meter 1a provided in the sensor head 1 is used to scan the solder balls 11.
The distance between the sensor head 1 is measured. At this time, the output change of the eddy current type displacement meter 1a input to the controller 23 through the eddy current type displacement meter amplifier 22 is a "reference plane".
Is recorded as a relative change with respect to. Therefore,
By comparing the maximum value and the minimum value of the output change, the height difference of the solder ball 11 as a reference for determining the quality of the external appearance in the external appearance inspection is determined.

As described above, according to the present semiconductor substrate appearance inspection apparatus, the sensor base 2 can adjust the length of each of the links 6a to 6f so as to expand and contract the length of each of the links 6a to 6f within a certain range with respect to the scanning stage 5. Therefore, even when the semiconductor substrate 10 is not arranged parallel to the scanning surface during setting, the sensor head 1 can be parallelized with the semiconductor substrate 10 by adjusting the length of each of the links 6a to 6f. Can be set to

A plane parallel to the semiconductor substrate 10 on which the sensor head 1 is located at this time is set as a "reference plane" so that the sensor head 1 is always held on the "reference plane" during scanning. Since the length of each of the links 6a to 6f is adjusted, the height of the solder ball 11 is accurately measured as unevenness with respect to the "reference plane" regardless of the vibration caused by the scanning of the scanning stage 5. Can be.

The actual position and orientation of the sensor head 1 can be detected by detecting the position and orientation of the target 3 fixed to the lower portion of the sensor base 2 by using the capacitive displacement meters 7a to 7f. Feedback to the expansion / contraction control of each of the links 6a to 6f can be performed through the control unit 23, and accurate control of holding the sensor head 1 on the “reference plane” can be performed.

Further, if the semiconductor substrate 10 is displaced during the measurement, the "reference plane" is also displaced. In this case, the "reference plane" is again determined at the position where the displacement has occurred by the above-described procedure. Is set, the deviation can be corrected, and the inspection can be continued without interruption. It should be noted that the present invention is not limited to the above-described embodiment, and can be implemented with various modifications without departing from the spirit of the present invention.

For example, if the number of links supporting the sensor base 2 is three or more, the sensor base 2 can be supported, and by changing the length of each link, the sensor base 2 can be supported.
Of the scanning stage 5 with respect to the scanning stage 5 can be changed. However, as can be seen from Equations (2) and (3), when the number of links is 3 to 5, X ₀ , Y ₀ , Z ₀ , θ _x ,
θ _y and θ _z are dependent and cannot be set to any position and orientation. Further, an arbitrary position and orientation can be set with the number of links of seven or more, but the number of links exceeding six is dependent on other links. Therefore, the six links shown in the present embodiment are the minimum number of links that can set the sensor base 2 at an arbitrary position and orientation with respect to the scanning stage 5.

Although the semiconductor substrate appearance inspection apparatus of the present invention mainly targets a semiconductor substrate as a measurement object, the semiconductor substrate is not limited to a measurement target, and can be used to measure other irregularities and shapes on the outer surface. It is possible to apply to various things that require.

[0043]

As described above in detail, according to the semiconductor substrate appearance inspection apparatus of the first aspect,
By adjusting the length of each support member, it is possible to take any position and orientation within a certain range with respect to the scanning stage, so that even if the semiconductor substrate is not arranged in parallel with the scanning surface, By adjusting the length of the member through expansion and contraction driving means, the detection unit can be adjusted in parallel with the semiconductor substrate, thereby preventing the occurrence of a detection error due to a shift between the detection unit and the semiconductor substrate. Can be.

Further, according to the semiconductor substrate appearance inspection apparatus of the present invention, the actual position and orientation taken by the detection section with respect to the scanning stage can be detected by the detection means, and each of the support parts can be detected by the control means. Since it is possible to feed back to expansion / contraction drive means for controlling expansion / contraction of the member, at the start of scanning, the detection unit is set in parallel with the semiconductor substrate, and at this time, the plane on which the detection unit is located is set as the target posture.
Irrespective of the movement of the scanning stage, the detection section and the semiconductor substrate can be kept accurately parallel, and the external shape of the semiconductor substrate can be detected accurately.

[Brief description of the drawings]

FIG. 1 is a schematic side view showing a configuration of a semiconductor substrate appearance inspection apparatus as one embodiment of the present invention.

FIG. 2 is a schematic diagram for explaining a geometrical positional relationship of a sensor stage with respect to a scanning stage according to the semiconductor substrate appearance inspection apparatus as one embodiment of the present invention.

FIG. 3 is a schematic diagram showing an arrangement of a capacitance type displacement meter on a sensor holder according to a semiconductor substrate appearance inspection apparatus as one embodiment of the present invention.

FIG. 4 is a functional block diagram showing a configuration of a semiconductor substrate appearance inspection apparatus as one embodiment of the present invention.

FIG. 5 is a schematic side view showing a configuration of a conventional semiconductor substrate appearance inspection apparatus.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Sensor head (detection part) 1a Eddy current displacement meter 2 Sensor base (fine movement stage) 3 Target 4 Sensor holder 5 Scanning stage (coarse movement stage) 6a-6f Link (supporting means) 7a-7f Capacitance displacement meter (Detection means) 8 Servo motor 9 Ball screw 10 Semiconductor substrate (measurement object) 11 Solder ball 20 Capacitance type displacement meter amplifier 21 Piezoelectric element drive amplifier 22 Eddy current type displacement meter amplifier 23 Controller (control means) 24 Servo amplifier 61 Piezoelectric element (Expansion / contraction drive means) 62 Compression spring 63 Piston 64 Elastic hinge

Claims (2)

[Claims] 1. A semiconductor substrate appearance inspection apparatus having a detection unit on a scanning stage, and scanning the semiconductor substrate by the detection unit while moving the scanning stage in the scanning direction to inspect the appearance shape of the semiconductor substrate. The semiconductor substrate according to claim 1, further comprising: a plurality of expandable and contractible support means; and an expansion and contraction drive means for expanding and contracting the support means, wherein the detection unit is supported on the scanning stage via the support means. Appearance inspection device. 2. A detecting means for detecting an attitude of the detecting section with respect to the scanning stage, and a controlling means for setting a target attitude of the detecting section with respect to the scanning stage, wherein the controlling means detects the attitude by the detecting means. 2. The semiconductor substrate appearance inspection apparatus according to claim 1, wherein the expansion / contraction drive unit is controlled so that the detected attitude of the detection unit becomes equal to the target attitude.