JPH11204640A - Manufacture of semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide the manufacturing method of a semiconductor device, wherein film thickness and film width of each wiring are varied without executing a photolithographic process. SOLUTION: This method has a process (1) for patterning wirings 9a, 9b to a semiconductor board 1, a process (2) for applying a silicon oxide film 10 on the wirings 9a, 9b, a process (3) for applying an organic insulation film 11 on the silicon oxide film 10, a process (4) for exposing the silicon oxide film 11 on the wiring 9b in an isolated region of a wiring by etching back the organic insulation film 11, a process (5) for exposing the wiring 9b in a region, which is isolated by selectively etching the silicon oxide film 11 of an exposed part, and a process (6) for forming a conductive film 7b made of aluminum on the wiring 9b of an exposed part. The processes are carried out in due order from (1) to (6).

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a method for manufacturing a semiconductor device, and more particularly, to a method for manufacturing a semiconductor device having a multilayer wiring.

[0002]

2. Description of the Related Art A conventional method for manufacturing a semiconductor device having a multilayer wiring is disclosed, for example, in Japanese Patent Application Laid-Open No. 8-293551. FIG. 15 is a cross-sectional view showing the structure of the semiconductor device disclosed in the above publication.

[0005] As shown in FIG. 15, a semiconductor substrate 101 having an element isolation region 102 selectively has a thickness of about 800 nm.
Is formed, and a contact hole 103 is selectively formed in the interlayer insulating film 104 corresponding to the element region.

[0004] A barrier metal 200 is formed in the contact hole 103 on the first interlayer insulating film 104 and in the contact hole 103.
7a is buried.

[0005] The barrier metal 200 is composed of, for example, titanium 105a having a thickness of 60 nm and titanium nitride 106a having a thickness of 100 nm in this order from the bottom. First wirings 109a and 109b are selectively formed in a region including the barrier metal 200 and the contact hole 103.

Here, the first wiring 109a corresponds to a wiring (hereinafter, referred to as a critical path) for controlling the operation speed of the whole circuit in terms of circuit operation, and the barrier metal 200 is arranged in order from the bottom. It has a laminated structure made of aluminum 108a having a thickness of about 800 nm. The second wiring 109b corresponds to a wiring other than the critical path, and includes, in order from the bottom, a barrier metal 200, aluminum 108b having a thickness of about 400 nm, and about 50 nm.
It has a laminated structure made of titanium nitride 106b having a thickness of nm. As described above, the thickness of the first wiring 109a corresponding to the critical path is formed to be thicker than the second wiring 109b corresponding to the other wiring.

Further, a second interlayer insulating film 111 is formed so as to cover the first wirings 109a and 109b, and this interlayer insulating film 111 is provided for selectively electrically conducting to the first wiring layer 109a. A via hole 110 is opened.
In the via hole 110, aluminum 108a is buried. On the second interlayer insulating film 111 including the via hole 110, a second wiring 112 is formed.
Note that the thickness of the second interlayer insulating film 111 is set to about 800 nm on the first wiring 109a of the critical path.

[0008] The second wiring 112 is 600 n
It is made of aluminum 108d having a thickness of m and titanium nitride 106c having a thickness of 50 nm. Second wiring 11
A cover film 113 is formed to cover the entire surface including the upper surface 2.

Next, a conventional method for manufacturing a semiconductor device will be described with reference to FIGS. First, as shown in FIG. 16, an element isolation region 102 is formed in a semiconductor substrate 101 by a selective oxidation method using a normal silicon nitride film as a mask during oxidation, and a required element is formed in a partitioned element region. I do. Then, a first interlayer insulating film 104 is formed flat on the semiconductor substrate 101, and a contact hole 103 is formed at a required position by a photolithography process and reactive ion etching.

The first interlayer insulating film 104 is, for example,
After forming a silicon oxide film to a thickness of 150 nm by normal pressure CVD, normal pressure C using TEOS and ozone (O ₃ ) as source gases is used.
After the BPSG is formed to a thickness of about 1 μm by the VD method, the total thickness of the first interlayer insulating film 104 becomes about 800 n.
m.

Next, titanium 105a, titanium nitride 10
The barrier metal 200 is formed by forming 6a by sputtering, and tungsten is grown by vapor phase epitaxy on the entire surface, and the contact hole 103 is filled with tungsten 107a by etching back.

Next, first wirings 109a and 109b are formed by forming a film of aluminum 108b and titanium nitride 106b to a thickness of 400 nm and 500 nm, respectively, by a sputtering method, and performing patterning by a photolithography process and reactive ion etching. However, the first wiring 109a is a wiring corresponding to a critical path, and the second wiring 109b is a wiring corresponding to a part other than the critical path.

Next, as shown in FIG. 17, a second interlayer insulating film 111a for covering the first interlayer insulating film 104 and the first wirings 109a and 109b is formed flat, and photolithography is performed. By the process and the reactive ion etching using CF ₄ as a source gas, the first wiring 109a corresponding to the critical path among the first wirings is formed.
The upper first interlayer insulating film 111a is selectively removed by etching to form a groove 114. At the same time, the lower half 115a of the via hole is opened at a necessary place on the first wiring 109b other than the critical path. At this time, the groove 114 and the lower half 115a of the via hole are formed deeply until they penetrate the titanium nitride 106b on the first wirings 109a and 109b.

Next, as shown in FIG. 18, the trenches 11 are formed by chemical vapor deposition of aluminum 108c using tetramethylaluminum (TMA) or the like as a source gas.
4 and the lower half 115a of the via hole are performed by chemical vapor polishing (CMP) until the lower half 115a of the via hole is filled.
Aluminum 108c is left only inside 5a. Further, after a second interlayer insulating film 111b is entirely formed thereon, the via hole 1 connected to the critical path is formed.
16 and an upper half 11 connected to a lower half of the via hole
5b is opened by a photolithography process and reactive ion etching.

Next, as shown in FIG. 19, aluminum 108d is formed to a thickness of about 1 μm by the CVD method, and is filled except for the inside of the via hole 116 and the upper half 115b.

Then, antireflection titanium nitride 106c in a photolithography process is formed by sputtering, and patterning is performed only in a desired region by a photolithography process and reactive ion etching to form a second wiring 112. You.

Finally, a cover film 113 is formed, and FIG.
Is completed.

According to the conventional method for manufacturing a semiconductor device, the thickness of the first wiring 109a corresponding to the critical path is made thicker than the thickness of the second wiring 109b corresponding to other than the critical path. The wiring resistance of the path is reduced, the wiring delay time of the critical path is reduced, and the operation speed of the entire circuit can be increased. As a result, the degree of integration can be improved without increasing the wiring width of the wiring corresponding to the critical path.

[0019]

However, in the conventional method of manufacturing a semiconductor device, the first method corresponding to the critical path
Since a photolithography step is added once to make a difference between the film thickness of the wiring 109a of FIG. 1 and the film thickness of the second wiring 109b corresponding to a portion other than the critical path, the manufacturing time becomes longer and the manufacturing cost becomes longer. There was a problem that it would be expensive. This problem becomes significant as the number of wiring layers increases.

The present invention has been made to solve the above problems, and provides a method of manufacturing a semiconductor device in which the thickness and width of each wiring can be made different without performing a photolithography step. The purpose is to do.

[0021]

The method of manufacturing a semiconductor device according to the present invention comprises: (1) a step of patterning a wiring on a semiconductor substrate; (2) a step of coating a silicon oxide film on the wiring; and (3). A step of applying an organic insulating film on the silicon oxide film, (4) a step of exposing the silicon oxide film on the wiring in an isolated region of the wiring by etching back the organic insulating film, and (5) (1) a step of selectively etching an exposed portion of the silicon oxide film to expose a wiring in an isolated region; and (6) a step of forming a conductive film on the exposed portion of the wiring. To (6).

According to the present invention, when an organic insulating film is applied on a silicon oxide film coated on a wiring, the organic insulating film adheres thickly in a dense area of the wiring and in an isolated area of the wiring. Adheres thinly. Then, by etching back the organic insulating film, the silicon oxide film on the wiring in the isolated region of the wiring is exposed and selectively etched to form a conductive film on the exposed wiring in the erected portion. . Therefore, without performing a photolithography process, the film thickness of the wiring can be changed in a self-aligned manner so that the wiring is thin in a dense region and thick in an isolated region.

The method of manufacturing a semiconductor device according to the present invention also includes:
(1) a step of patterning a first wiring on a semiconductor substrate via an insulating film; (2) a step of coating a first silicon oxide film on the first wiring; and (3) a first silicon A step of applying an organic insulating film on the oxide film, and (4) a step of exposing the first silicon oxide film on the wiring in an isolated region of the wiring by etching back the organic insulating film; 5) a step of selectively etching the exposed portion of the first silicon oxide film to expose a wiring in an isolated region; (6) a step of forming a conductive film on the exposed portion of the wiring; (9) a step of forming a second silicon oxide film on the organic insulating film; (8) a step of selectively forming via holes by opening the second silicon oxide film and the organic insulating film; The first wiring is formed on the second silicon oxide film via a via hole. Includes a step of forming a second wiring that gas connecting, and is characterized in that which is performed in order from (1) (9).

The silicon oxide film on the wiring may be tapered.

Another method of manufacturing a semiconductor device according to the present invention is as follows.
(1) a step of patterning wiring on a semiconductor substrate;
(2) a step of coating a silicon oxide film having a tapered portion on the wiring, (3) a step of applying an organic insulating film on the silicon oxide film, and (4) etching back of the organic insulating film. Exposing the silicon oxide film on the wiring in the isolated area of the wiring and the silicon oxide film on the wiring in the dense area of the wiring; and (5) selectively etching the silicon oxide film in the exposed part. And (6) a step of forming a conductive film on the exposed portion of the wiring, and the steps are performed in the order of (1) to (6). is there.

According to the present invention, when the organic insulating film is applied on the silicon oxide film coated on the wiring, the organic insulating film adheres thickly in the dense area of the wiring and in the isolated area of the wiring. Adheres thinly. Then, by etching back the organic insulating film, the silicon oxide film on the wiring in the isolated area of the wiring and the silicon oxide film on the wiring in the dense area of the wiring are exposed and selectively etched. Then, a conductive film is formed on the exposed wiring. At this time,
Since the silicon oxide film covering the wiring is tapered, the exposed width of the wiring in the isolated area of the wiring is wider than the exposed width of the wiring in the dense area. Therefore, without performing a photolithography process,
The film width of the wiring can be changed so that it is narrow in a dense area of the wiring and wide in an isolated area.

Another method for manufacturing a semiconductor device according to the present invention also includes:
(1) a step of patterning a first wiring on a semiconductor substrate via an insulating film; (2) a step of coating a first silicon oxide film having a tapered portion on the first wiring; (3)
A step of applying an organic insulating film on the first silicon oxide film, and (4) etching back the organic insulating film to form the first silicon oxide film and the wiring on the wiring in an isolated region of the wiring. (5) a step of exposing the first silicon oxide film on the wiring in the dense area, and (5) a step of selectively etching the exposed first silicon oxide film on the wiring to expose the wiring. 6) a step of forming a conductive film on the exposed wiring, (7) a step of forming a second silicon oxide film on the organic insulating film, and (8) a second silicon oxide film and an organic film. Selectively forming a via hole by opening the insulating film; and (9) forming a via hole on the second silicon oxide film.
The second electrically connected to the first wiring via the via hole
And a step of forming the wiring described in (1) to (9).

The silicon oxide film in the step (2) is preferably formed by a bias ECR method.

The organic insulating film is made of BCB, organic SO
It is preferable to include a substance selected from the group consisting of G, valylene-F, valylene-N, amorphous carbon, and fluorinated amorphous carbon.

[0030]

Embodiments of the present invention will be described below with reference to the drawings. 1 to 7 show the first embodiment of the present invention.
FIG. 14 is a process chart showing a method for manufacturing a semiconductor device according to the embodiment.

First, as shown in FIG. 1, an element isolation region 2 is formed on a semiconductor substrate 1 by a selective oxidation method using a normal silicon nitride film as a mask at the time of oxidation. Is formed. Then, the first interlayer insulating film 3 is formed flat on the semiconductor substrate 1, and a contact hole 4 is formed at a required position by a photolithography process and reactive ion etching.

The first interlayer insulating film 3 is formed, for example, by forming a silicon oxide film to a thickness of 150 nm by a normal pressure CVD method,
BPSG by normal pressure CVD using EOS (tetraethoxyoxysilane) and ozone (O ₃ ) as source gases
(Boron phospho silicate glass) about 1μ
After the formation of the first interlayer insulating film 3, the entire thickness of the first interlayer insulating film 3 is about 800 nm.

Next, a barrier metal 5 is formed on the first interlayer insulating film 3 by sputtering, tungsten is entirely grown by vapor phase epitaxy, and etch back is performed to leave tungsten 6 in the contact hole 4. To fill.

Next, aluminum 7a, titanium nitride 8
a is formed by sputtering with a thickness of 400 nm and 50 nm, respectively, and is patterned to form first layer wirings 9a and 9b. Here, the first layer wiring 9a corresponds to a wiring in a dense area of wiring, and the first layer wiring 9b corresponds to a wiring in an isolated area where wiring is sparse.

Next, as shown in FIG. 2, a bias ECR (Electron Cyclotron) is performed while irradiating Ar ions.
Resonance) First layer wiring 9 by plasma CVD
A first silicon oxide film 10 made of SiO ₂ , SiOF or the like and having a tapered portion 10a is formed on
m.

Next, an organic insulating film 11 such as an organic SOG (spin-on glass) is formed on the first silicon oxide film 10.
Is formed by a spin coating method, and annealing is performed. The organic insulating film 11 is thickly attached to the dense area of the wiring pattern, that is, the area of the first layer wiring 9a, and is thinly attached to the isolated area of the wiring pattern, that is, the area of the first layer wiring 9b. The organic insulating film 11 is made of, for example, BCB (benzocyclobutene), valylene-F,
Variylene-N, amorphous carbon, or fluorinated amorphous carbon may be used.

Next, as shown in FIG. 3, the organic insulating film 11 is etched back by anisotropic reactive ion etching, and the first insulating film 11 on the first layer wiring 9b in the isolated region is formed.
The upper portion of the silicon oxide film 10 is exposed.

Then, as shown in FIG. 4, the exposed first silicon oxide film 1 on the first layer wiring 9b in the isolated region
0 is removed by reactive ion etching with selectivity to the organic insulating film 11. The etching condition at this time is, for example, using a mixed gas of CF ₄ and CHF ₃ ,
Atmospheric pressure is about 1 Torr and RF power is about 100W.

Next, as shown in FIG. 5, selective CVD using, for example, tetramethyl aluminum (TMA) as a raw material.
Method, aluminum 7 is selectively formed on first layer wiring 9b.
b is formed. The aluminum 7b is prevented from protruding to the upper surface of the remaining first silicon oxide film 10.

Next, as shown in FIG. 6, a second silicon oxide film 12 is formed by a plasma CVD method, and the total film thickness on the wiring is reduced by chemical mechanical polishing to flatten the film globally. Polish to 800 nm.

Next, as shown in FIG.
3 is selectively opened, titanium 14 is formed to a thickness of about 30 nm by a sputtering method, and aluminum 7c is continuously sputtered at a high temperature of about 450 ° C. to bury aluminum 7c in via hole 13.

Next, titanium nitride 8b as an anti-reflection film is formed to a thickness of about 50 nm by a sputtering method at the time of a photolithography step in patterning the wiring, and a desired region is formed by the photolithography step and reactive ion etching. Only titanium nitride 8b, aluminum 7
c, leaving the titanium 14 to form the second layer wiring 15. When the aluminum 7c is sputtered at a high temperature of about 450 ° C., the aluminum 7c reacts with the titanium 14 to form TiA.
l ₃ layer is formed.

Finally, a cover film 16 is formed on the entire surface to complete the semiconductor device.

Next, the effects of the first embodiment of the present invention will be described. For example, in the chip configuration shown in FIG. 8, the wirings 20a in the cell are arranged relatively densely, and the wiring length is as short as 1 mm or less. The wiring 20b connecting the cells is relatively sparsely arranged, and the wiring length is as long as 1 mm or more. When the wiring length is short, reducing the wiring capacitance effectively works to reduce the wiring delay. On the other hand, when the wiring length is long, reducing the wiring resistance effectively works to reduce the wiring delay.

In the first embodiment, the film thickness of the first layer wiring 9b in the region where the wiring is isolated is thicker than that of the first layer wiring 9a in the region where the wiring is dense, so that the wiring resistance can be reduced. Can be.

In the first embodiment, by applying the organic insulating film 11, the region where the film thickness is increased and the wiring resistance is reduced is limited to an isolated region where wiring is sparse in a self-aligned manner. Therefore, an increase in capacitance between adjacent wirings due to an increase in the film thickness of the wirings can be suppressed to a very small value, so that wiring delay can be effectively reduced.

Further, since the film thickness of the first layer wiring 9a in the region where the wirings are dense can be reduced, the capacitance between adjacent wirings which occupies most of the wiring capacitance can be reduced, and the wiring delay can be greatly reduced.

FIG. 9A is a graph showing the relationship between the number of wiring layers and the number of manufacturing steps in the manufacturing method of the present invention and the conventional manufacturing method. FIG. 9B is a graph showing the relationship between the present invention and the conventional manufacturing method. 6 is a graph showing a frequency distribution of wiring delay time in a semiconductor device manufactured by the method.

As can be seen from FIG. 9B, the method of the present invention is not so different from the conventional method in which the wiring thickness is optimized for the critical path with respect to the wiring length dependency of the circuit operation speed. . Further, as can be seen from FIG. 9A, the method of the present invention is
The number of steps can be reduced as compared with the conventional method, and this effect becomes remarkable as the number of wiring layers increases.

Next, a second embodiment of the present invention will be described with reference to the drawings. 10 to 14 are process diagrams showing a method for manufacturing a semiconductor device according to the second embodiment of the present invention.

In the second embodiment, first, as shown in FIG. 10, after forming first layer wirings 9a and 9b, a first silicon oxide film 10 having a tapered portion 10a is formed by bias ECR plasma CVD. (Bias ECR silicon oxide film) is formed to a thickness of about 300 nm, and an organic insulating film 11 such as organic SOG is formed by a spin coating method and annealed. Up to this step, the process is the same as in the first embodiment (see FIG. 2).

Next, as shown in FIG. 11, the organic insulating film 11 is etched back, and the first layer wiring 9b in the isolated area of the wiring and the first layer wiring 9 in the dense area of the wiring are etched back.
Exposing both the first silicon oxide films 10 on a.

Next, as shown in FIG. 12, the exposed first silicon oxide film 10 on the first layer wiring 9b in the isolated area of the wiring and the first silicon oxide film 10 on the first layer wiring 9a in the dense area of the wiring are formed. Of the silicon oxide film 10 is removed by reactive ion etching having selectivity with respect to the organic insulating film 11. At this time, the conditions of the reactive ion etching are, for example, using a mixed gas of CF ₄ and CHF ₃ and a pressure of about 0.1.
Torr, high frequency power about 100W. At this time, the silicon oxide film 11 covering the wires 9a and 9b
Is tapered, so that the first of the isolated areas of the wiring
The width of the first silicon oxide film 10 on the layer wiring 9b where the first silicon oxide film 10 is removed by etching is equal to the width of the first layer wiring 9a in the dense area of the wiring.
The width is larger than the width of the upper first silicon oxide film 10 removed by etching.

Next, as shown in FIG. 13, a selective CV using, for example, tetramethyl aluminum (TMA) as a raw material.
By the method D, aluminum 7b is selectively formed on the first layer wiring 9a in the region where the wiring is dense and on the first layer wiring 9b in the region where the wiring is isolated. At this time, the film thickness of the aluminum 7b in the region where the wiring is dense is formed smaller than the film thickness of the aluminum 7b in the region where the wiring is isolated.

Next, as shown in FIG. 14, a second silicon oxide film (plasma oxide film) 12 is formed, and in order to make it globally flat, the total film thickness on the wiring is reduced by chemical mechanical polishing. Polishing is performed to about 800 nm, and the via hole 13 is selectively opened.

Next, titanium 14 is formed to a thickness of about 30 nm by a sputtering method, and aluminum 7c is continuously sputtered at a high temperature of about 450 ° C. to bury aluminum 7c in via hole 13.

Next, a titanium nitride 8b as an antireflection film in a photolithography step for patterning wiring is formed to a thickness of about 50 nm by a sputtering method, and a desired region is formed by a photolithography step and reactive ion etching. Only titanium nitride 8b, aluminum 7
c, leaving the titanium 14 to form the second layer wiring 15.
When the aluminum 7c is sputtered at a high temperature of about 450 ° C., the aluminum 7c reacts with the titanium 14 to form Ti 7
An Al ₃ layer is formed.

Finally, a cover film 16 is formed on the entire surface to complete a semiconductor device.

The second embodiment is different from the first embodiment in that aluminum 7b for increasing the wiring film thickness is formed by a selective CVD method even in a region where wirings are densely formed. . Select CV among wirings in dense area
Since the upper half formed by the method D has a narrow width,
The increase in the capacitance between adjacent wirings is small, and the wiring resistance can be reduced. For the wiring in the isolated region, the width of the upper half is almost the same as that of the lower half, so that the effect of reducing the wiring resistance is great.

Further, since the thickness of the wiring in the dense area and the thickness of the wiring in the isolated area are substantially equal, the depth of the via hole can be made constant, and the control of the etching time becomes easy. If the etching time is adjusted to the deeper via hole when the depth of the via hole is uneven, overetching is applied to the shallow via hole, and precipitates such as alumina are likely to be generated at the bottom of the via hole, increasing the via resistance. This was a key figure that caused conduction failure. But the second
In the embodiment, since the depth of the via hole can be made constant, such a cause of the defect can be eliminated.

The present invention is not limited to the above embodiment, and various changes can be made within the scope of the technical matters described in the claims. For example, the shape of the tapered portion 10a is not limited to the illustrated one, and may be another shape.

[0062]

According to the method of manufacturing a semiconductor device of the present invention, it is possible to limit the region in a self-aligned manner and make a difference in the film thickness and film width of the wiring without performing a photolithography step. The manufacturing time is shortened accordingly, and the manufacturing cost can be reduced. This effect becomes significant as the number of wiring layers increases.

[Brief description of the drawings]

FIG. 1 is a process chart showing a method for manufacturing a semiconductor device according to a first embodiment of the present invention.

FIG. 2 is a process chart showing a method for manufacturing a semiconductor device according to the first embodiment of the present invention.

FIG. 3 is a process chart showing a method for manufacturing a semiconductor device according to the first embodiment of the present invention.

FIG. 4 is a process chart showing a method of manufacturing the semiconductor device according to the first embodiment of the present invention.

FIG. 5 is a process chart showing a method of manufacturing the semiconductor device according to the first embodiment of the present invention.

FIG. 6 is a process chart showing a method for manufacturing the semiconductor device according to the first embodiment of the present invention.

FIG. 7 is a process chart showing a method of manufacturing the semiconductor device according to the first embodiment of the present invention.

FIG. 8 is an explanatory diagram showing a chip configuration for describing an effect of the semiconductor device manufacturing method according to the first embodiment of the present invention;

FIG. 9A is a graph showing the relationship between the number of wiring layers and the number of manufacturing steps in the manufacturing method of the present invention and the conventional manufacturing method, and FIG. 6 is a graph showing a frequency distribution of wiring delay time in a semiconductor device subjected to the invention.

FIG. 10 is a process chart showing a method for manufacturing a semiconductor device according to a second embodiment of the present invention.

FIG. 11 is a process chart showing a method for manufacturing a semiconductor device according to a second embodiment of the present invention.

FIG. 12 is a process chart showing a method for manufacturing a semiconductor device according to a second embodiment of the present invention.

FIG. 13 is a process chart illustrating a method for manufacturing a semiconductor device according to a second embodiment of the present invention.

FIG. 14 is a process chart illustrating a method for manufacturing a semiconductor device according to a second embodiment of the present invention.

FIG. 15 is a cross-sectional view showing a structure of a conventional semiconductor device.

FIG. 16 is a process chart showing a conventional method for manufacturing a semiconductor device.

FIG. 17 is a process chart showing a conventional method for manufacturing a semiconductor device.

FIG. 18 is a process chart showing a conventional method for manufacturing a semiconductor device.

FIG. 19 is a process chart showing a conventional method for manufacturing a semiconductor device.

[Explanation of symbols]

 1: semiconductor substrate 2: element isolation region 3: first interlayer insulating film 4: contact hole 5: barrier metal 6: tungsten 7a, 7b, 7c: aluminum 8a: 8b titanium nitride 9a, 9b: first layer wiring 10: First silicon oxide film 10a: Tapered portion 11: Organic insulating film 12: Second silicon oxide film 13: Via hole 14: Titanium 15: Second layer wiring 16: Cover film

Claims (7)

[Claims] 1. A step of patterning a wiring on a semiconductor substrate, a step of coating a silicon oxide film on the wiring, and a step of coating an organic insulating film on the silicon oxide film. And (4) exposing the silicon oxide film on the wiring in an isolated region of the wiring by etching back the organic insulating film; and (5)
A step of selectively etching the silicon oxide film in the exposed part to expose the wiring in the isolated area; and (6) a step of forming a conductive film on the wiring in the exposed part. A method for manufacturing a semiconductor device, comprising: performing the steps in the order of (1) to (6). 2. The method according to claim 1, further comprising:
(2) covering the first wiring with a first silicon oxide film; and (3) covering the first wiring with a first silicon oxide film.
Applying an organic insulating film on the first silicon oxide film; and (4) etching the organic insulating film back to remove the first silicon on the wiring in an isolated region of the wiring. Exposing an oxide film; (5) selectively etching the exposed portion of the first silicon oxide film to expose the wiring in the isolated region; and (6) exposing the exposed portion. Forming a conductive film on the wiring, (7) forming a second silicon oxide film on the organic insulating film, and (8) forming the second silicon oxide film and the organic insulating film. Forming a via hole to selectively form a via hole, and (9) forming a second wiring on the second silicon oxide film, the second wiring being electrically connected to the first wiring via the via hole. And (b) comprising the steps of (1) to (9). A method for manufacturing a semiconductor device, which is performed in order. 3. The method according to claim 1, wherein the silicon oxide film on the wiring is tapered. 4. A step of patterning a wiring on a semiconductor substrate, a step of coating a silicon oxide film having a tapered portion on the wiring, and a step of organic insulating on the silicon oxide film. And (4) etching back the organic insulating film to form a silicon oxide film on the isolated area of the wiring and the silicon oxide film on the dense area of the wiring. Exposing the silicon oxide film; (5) selectively etching the silicon oxide film in the exposed portion to expose the wiring; and (6) exposing the wiring in the exposed portion. Forming a conductive film on the semiconductor device, wherein the method is performed in the order of (1) to (6). 5. The method according to claim 1, wherein:
(2) a step of coating a first silicon oxide film having a tapered portion on the first wiring, and (3) an organic insulating film on the first silicon oxide film. And (4) etching back the organic-based insulating film to form the first silicon oxide film on the isolated area of the wiring and the dense area of the wiring. Exposing the first silicon oxide film on the wiring; and (5) selectively etching the first silicon oxide film in the exposed portion,
Exposing the wiring, (6) forming a conductive film on the exposed portion of the wiring, and (7) forming a second silicon oxide film on the organic insulating film.
(8) a step of selectively forming a via hole by opening the second silicon oxide film and the organic insulating film; and (9) forming the first hole on the second silicon oxide film via the via hole. Forming a second wiring that is electrically connected to the wiring of (1), wherein the method is performed in the order of (1) to (9). 6. The method of manufacturing a semiconductor device according to claim 1, wherein the silicon oxide film in the step (2) is formed by a bias ECR method. 7. The organic insulating film is made of BCB, organic SO.
7. The method of manufacturing a semiconductor device according to claim 1, further comprising a substance selected from the group consisting of G, valylene-F, valylene-N, amorphous carbon, and fluorinated amorphous carbon. .