JPH11202100A - Optical device using synchrotron emitted light, x-ray microscope using such device and x-ray exposure system - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an optical device where synchrotron emitted light is used to always obtain a highly strong X-ray beam in an irradiated section by detecting a relatively variable angle between a light-emitting point in a light source of synchrotron emitted light and the optical device and correcting the angle. SOLUTION: An X-ray beam 4 radiated from a light source 3 of a synchrotron emitted light is reflected by a condensing mirror 5 and is condensed in the position of a sample 7. After the beam 4 passes through the sample 7, an image is formed in an X-ray detector 9 by a Schwarzschild projection optics system 8. The X-ray beam 4 that passes through a hole in the center of the condensing mirror 5 is incident on an X-ray angle detector 6 to measure the angle with an angle displacement arithmetic circuit 10. The angle of the X-ray beam 4 can be corrected by driving a surface plate 13 with a stage drive mechanism 12 of a stage 11.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to an optical apparatus using synchrotron radiation as a light source, an X-ray microscope using the optical apparatus, and an X-ray exposure apparatus.

[0002]

2. Description of the Related Art As one example of an optical device using a conventional synchrotron radiation light source, there is an X-ray microscope as shown in FIG. In a conventional X-ray microscope, an X-ray beam 94 emitted from a synchrotron radiation light source 93 is condensed on a sample 97 by a condensing mirror 95, and then the sample 97
The sample 97 is observed by irradiating the X-ray beam 94 having passed through the X-ray detector 99 with a Schwarzschild projection optical system 98 as an enlarged projection optical system to form an image.

[0003] The synchrotron radiation light source 93 is a light source utilizing an electron beam accelerated to a high energy and radiating from an electron orbit 91 in a circular orbit in a magnetic field generated by a bending electromagnet. Electrons that accelerate at high speed emit electromagnetic waves, but their energy is sharply concentrated in the traveling direction of the electrons. Therefore, from the electron orbit 91 that draws a circular orbit, electromagnetic waves having sheet-like directivity concentrated on the orbital plane are emitted. When observed from one point in the plane of the electron orbit, it appears that the X-ray beam 94, which is an electromagnetic wave, is emitted from a point where the tangent line of the electron orbit 91 passes through the observation point. The point is called a light emitting point 92.

[0004] The first of the condenser mirror 95 having a spheroidal shape
Is set such that the tangent of the electron trajectory at the first focus position intersects with the center of the reflection surface of the condensing mirror 95. A sample 97 to be observed is arranged.

An electromagnetic wave radiated from an electron beam, that is, an X-ray beam 94 is reflected by a condenser mirror 95, condensed and transmitted at a position of a sample 97, and is subjected to a Schwarzschild projection optical system 98.
Is imaged on the X-ray detector 99. The Schwarzschild projection optical system 98 is an enlarged projection optical system composed of two reflecting mirrors on which a multilayer film is formed. As the X-ray detector 99, an imaging sensor such as an X-ray film, a CCD, and an imaging plate is used.

[0006]

However, in the above-mentioned conventional optical device, as shown in FIG. 14, the variation of the electron beam acceleration energy, the variation of the direction and strength of the magnetic field of the bending electromagnet, and the like cause the electron trajectory 91 to change. The position may fluctuate. Usually, the synchrotron radiation light source 93 and the sample observation unit 101 are separated from each other by several meters or more, and the relative positions of the two may fluctuate due to temperature fluctuations of a building in which the apparatus is installed. With these, the converging mirror 9
5 is shifted to the electron trajectory 91b shifted from the normal electron trajectory 91a, the light emitting point 92 is shifted, and the X-ray beam 94 emitted from the shifted electron trajectory 91b
Also deviates from the position of the sample 97. For this reason, there is a problem that the intensity of the X-ray beam 94 irradiating the sample 97 decreases, and the sample 97 cannot be observed with high accuracy.

Therefore, the present invention provides a method for producing a synchrotron radiation light source, which is capable of reducing the relative position between the light emitting point and the optical device.
High intensity or uniform intensity X
It is an object of the present invention to provide an optical device that uses synchrotron radiation to obtain a line beam.

[0008]

According to another aspect of the present invention, there is provided an optical apparatus having an optical system for guiding synchrotron radiation emitted from a light source to an object to be irradiated. Is disposed at a position where the synchrotron radiation emitted from is incident, based on a detection means for detecting the angle of incidence, based on the detection result by the detection means,
Correcting means for correcting the incident angle by moving either the light source or the optical system.

In the optical device of the present invention configured as described above, the synchrotron radiation emitted from the light source is incident on the detection means, and the angle of incidence is detected. Then, based on the detection result by the detection means, the correction means, so that the intensity of the synchrotron radiation emitted to the irradiation object is maximized,
The angle of incidence on the detection means is corrected. As a result, the intensity of the synchrotron radiation emitted to the object is maximized.

The detecting means includes a slit plate provided with a slit through which the synchrotron radiation passes, and a light having at least one-dimensional position detection function disposed at a position irradiated with the synchrotron radiation passing through the slit. And a sensor.

Alternatively, a slit plate provided with a slit through which the synchrotron radiation passes is provided, and a slit plate provided at a position irradiated with the synchrotron radiation passing through the slit.
It may be configured with a divided optical sensor.

[0012] Alternatively, two slit plates provided at intervals in a direction in which the synchrotron radiation travels and each provided with a slit through which the synchrotron radiation passes, and a synchrotron radiation passing through the slit plate May be configured by a first optical sensor disposed at a position where the light is irradiated, and a second optical sensor disposed at a position irradiated with the synchrotron radiation without passing through the slit plate. .

In addition, two blind collimators provided at intervals in the direction in which the synchrotron radiation travels and each provided with a slit through which the synchrotron radiation passes, and synchrotron radiation passing through the blind collimator In some cases, the first optical sensor is arranged at a position where the light is irradiated, and the second optical sensor is arranged at a position where the synchrotron radiation is irradiated without passing through the slit plate.

The correcting means calculates an incident angle correction angle based on an input from the optical sensor, and drives the optical system based on the calculation result by an amount corresponding to the incident angle correction angle. The correction may be performed by a configuration having a driving mechanism.

Alternatively, an arithmetic unit for calculating the correction angle of the incident angle based on the input from the optical sensor, and a reflecting mirror for changing the traveling direction of the synchrotron radiation based on the calculation result may be used as the correction angle for the incident angle. The correction is performed by a configuration having a driving mechanism that drives by a corresponding amount. Alternatively, a configuration including an arithmetic device that calculates a correction angle of an incident angle based on an input from an optical sensor, and an electromagnet that moves an electron trajectory of a light source by an amount corresponding to the correction angle of the incident angle based on the calculation result. May be used for correction.

The X-ray microscope according to the present invention is an X-ray microscope for irradiating a sample with synchrotron radiation and detecting the synchrotron radiation transmitted through the sample to observe the sample. A light source that emits synchrotron radiation; an optical device according to any one of the above aspects of the present invention; and a detection unit that detects the synchrotron radiation transmitted through the sample.

An X-ray exposure apparatus according to the present invention is an X-ray exposure apparatus that irradiates a mask with synchrotron radiation and transfers the pattern of the mask onto a wafer, wherein the light source radiates the synchrotron radiation. An X-ray exposure apparatus comprising the optical device according to any one of the above aspects of the present invention.

[0018]

Embodiments of the present invention will now be described with reference to the drawings.

(First Embodiment) FIG. 1 is a schematic configuration diagram of an X-ray microscope according to a first embodiment.

The synchrotron radiation light source 3 converts the accelerated electron beam into an electron orbit 1 in a magnetic field generated by a bending electromagnet.
When advancing while drawing a circular orbit as shown in the figure, an electromagnetic wave including X-rays is emitted in the traveling direction of the electron beam, and since the electron beam draws a circular orbit, a sheet-like X corresponding to the orbital surface of the circular orbit. It emits a line beam 4.

An X-ray beam 4 emitted from a synchrotron radiation light source 3 is condensed on a sample 7 by a condensing mirror 5 and thereafter the X-ray beam 4 transmitted through the sample 7 is converted into a Schwarzschild, which is an enlarged projection optical system. The X-ray detector 9 is irradiated by the projection optical system 8. The condenser mirror 5, the sample 7, the Schwarzschild projection optical system 8, and the X-ray detector 9 are installed on a surface plate 13. The surface plate 13 is installed on the stage 11 driven by the stage drive mechanism 12, and the surface plate 13 is driven by driving the stage 11.
The condenser mirror 5 has a spheroidal shape, and the first
Is located on the electron trajectory 1 such that the tangent of the electron trajectory 1 at the first focus position intersects the center of the reflection surface of the condenser mirror 5, and is further observed at the second focus position. The target sample 7 is located.

The X-ray beam 4 radiated from the synchrotron radiation light source 3 is reflected by the condenser mirror 5, condensed at the position of the sample 7, transmitted through the sample 7, and formed into two layers formed of a multilayer film. An image is formed on the X-ray detector 9 by the Schwarzschild projection optical system 8 composed of the reflecting mirrors. As the X-ray detector 9, an imaging type detector such as an X-ray film, a CCD, and an imaging plate is used.

A hole is formed in the center of the condenser mirror 5, and an X-ray angle detector 6 for detecting an incident angle of the incident X-ray beam is provided at a position where the X-ray beam 4 passing therethrough is incident. Is arranged. Further, the X-ray microscope according to the present embodiment is provided with an angle shift operation circuit 10 that outputs a signal for controlling the stage drive mechanism 12 based on the detection result of the X-ray angle detector 6.

Hereinafter, the X-ray angle detector 6 will be described.

The X-ray angle detector 6 comprises a slit plate 14 as shown in FIG. 2 and a one-dimensional position detecting type X-ray detector 16. The slit plate 14 is a 0.1 mm-thick copper plate having a slit 15 having a width of 1 mm and a length of 10 mm. The one-dimensional position detection type X-ray detector 16 is a resistance division type one-dimensional position detection photodiode, so-called. PSD
Is used. In order to avoid irradiation damage to the photodiode, a nickel foil having a thickness of about 50 μm is provided as a filter on the incident surface of the photodiode to reduce the intensity of X-rays incident on the photodiode. In the present embodiment, the slit plate 14 and the one-dimensional position detecting X-ray detector 16
Is set so that the longitudinal direction of the slit 15 in the slit plate 14 is orthogonal to the synchrotron electron orbit plane, and the one-dimensional position detecting X-ray detector 1
Numeral 6 is installed so that its position detection axis coincides with the synchrotron electron orbit plane.

The X-ray beam 4 emitted from the synchrotron radiation light source 3 passes through the slit 15 and enters the one-dimensional position detection type X-ray detector 16. The one-dimensional position detection type X-ray detector 16 outputs two signals corresponding to the incident position. By calculating the intensity ratio of these two signals, the incident position of the X-ray beam 4 can be determined. That is, assuming that the two signals are output S ₁ and output S ₂ respectively, x = k (S ₁ −S ₂ ) /
The incident position x of the X-ray beam is determined from (S ₁ + S ₂ ). Here, k is a calibration coefficient, for example, a value of about 1 mm.

If the angle of the X-ray beam 4 incident on the X-ray angle detector 6 fluctuates, for example, by 1 mrad, the position at which the X-ray beam 4 is incident on the one-dimensional position detection type X-ray detector 16 is 0.2 mm. fluctuate. At this time, (S ₁ -S ₂ ) / (S ₁
+ S ₂ ) varies by 0.2. That is, (S ₁ -S ₂ ) /
When (S ₁ + S ₂ ) fluctuates by 0.2, the fluctuation of the angle of the X-ray beam 4 is 1 mrad, and the angle of the X-ray beam 4 can be easily grasped from this relationship.

The X-ray angle detector 6 is connected to a switch as shown in FIG.
Consist of a lit plate 14 and a two-piece X-ray detector 17
Is also possible. The X-ray beam 4 that has passed through the slit 15
Two areas on the two-segment X-ray detector 17 are irradiated and
Two outputs S depending on the firing position ₁, Output S_TwoIs output.
When the ratio of these two signals is obtained, the two-split X-ray detector 17
The incident position of the X-ray beam 4 upward can be seen. Therefore,
Slit plate 14 and one-dimensional position detection type X-ray detector 16
Of the angle of the X-ray beam 4
Fluctuations can be easily detected. Note that FIG.
X-ray angle detector 6 composed of X-ray detector 17 and two-segment X-ray detector 17
Output S from₁, Output S_TwoShows the signal ratio of the output.

Next, an angle correction method according to this embodiment will be described. In the present embodiment, since the condenser mirror 5, the X-ray angle detector 6, the sample 7, the Schwarzschild projection optical system 8, and the X-ray detector 9 are installed on the surface plate 13,
The angle correction is performed by driving the surface plate 13 by the stage drive mechanism 12 of the stage 11. That is, first, the output of the X-ray angle detector 6 at the angle at which the intensity of the X-ray beam 4 is maximized is stored in the angle shift calculation circuit 10. At the time of sample observation, the surface plate 13 is moved so that the output of the X-ray angle detector 6 becomes the same value as the output of the X-ray angle detector 6 when the intensity of the X-ray beam 4 stored previously is the maximum. Let
Correct the angle. By maintaining this state, the intensity of the X-ray beam 4 applied to the sample 7 always keeps the maximum value.

(Second Embodiment) FIG. 5 shows a schematic configuration diagram of an X-ray microscope according to a second embodiment.

In this embodiment, the X-ray beam 34 is emitted from the light emitting point 32 of the synchrotron radiation light source 33 in the same manner as in the first embodiment. The X-ray beam 34 emitted from the synchrotron radiation light source 33 is firstly transmitted to a plane mirror 5 movably provided by a plane mirror driving mechanism 51.
After being reflected at 0, the light is further reflected by the condenser mirror 35 and condensed on the sample 37. An X-ray angle detector 3 is located beside the condenser mirror 35.
6 is provided, whereby the angle of the X-ray beam 34 is detected. As the X-ray angle detector 36, two slit plates (light source side slit plates 44a, X
A line detector side slit plate 44b) and two scintillation type X-ray detectors 52 are used. Light source side slit plate 44
a, each of the X-ray detector side slit plates 44b has a width of 1 m
m, thickness 0.2 m having a slit 45 with a length of 10 mm
m stainless steel plate is used. The slit plate 44a on the light source side and the slit plate 44b on the X-ray detector side are arranged at intervals in the traveling direction of the X-ray beam 34a, and the interval between them is 100 mm. The slits 45 of the light source side slit plate 44a and the X-ray detector side slit plate 44b are each opened in a direction in which the longitudinal direction is orthogonal to the electron orbit plane of the synchrotron. Further, the slit 45 of the X-ray detector side slit plate 44b is connected to the light source side slit plate 44a.
0.5 m in the direction perpendicular to the traveling direction of the X-ray beam 34 in the plane of the synchrotron electron orbit.
m offset. One of the two scintillation-type X-ray detectors 52 is installed immediately after the X-ray detector-side slit plate 44b, and the other is shielded by the light source-side slit plate 44a and the X-ray detector-side slit plate 44b. It is arranged at a position to receive the X-ray beam 34b without being received.

The X-ray beam 34a emitted from the synchrotron radiation light source 33 first passes through the slit plate 44a on the light source side, further passes through the slit plate 44b on the X-ray detector side, and passes through the slit plate 44b on the X-ray detector side. The light enters the scintillation type X-ray detector 52 disposed immediately after. At this time, it outputs the signals S ₁ that is proportional to the amount of incident. The amount of the X-ray beam 34a incident on the scintillation type X-ray detector 52 is a function of the angle of the X-ray beam 34a emitted from the synchrotron radiation light source 33 if the intensity of the synchrotron radiation light source 33 is constant. is there. Light source side slit plate 4
The output signal S ₂ of the scintillation type X-ray detector 52 arranged at a position receiving the X-ray beam 34 b without being blocked by the 4 a and the X-ray detector side slit plate 44 b is proportional to the intensity of the synchrotron radiation light source 33. Therefore, as shown in FIG. 7, S ₁ / S ₂ is an X-ray beam 34 (X-ray beams 34a, X
It is a function of the angle of the line beam 34b).

In this embodiment, the distance between the light source side slit plate 44a having a width of 1 mm and the X-ray detector side slit plate 44b is one.
00 mm, for example, the angle of the X-ray beam 34 is 1 mr
If ad changes, S ₁ / S ₂ changes by 10%. That is, when S ₁ / S ₂ fluctuates by 10%, the fluctuation of the angle of the X-ray beam 34 is 1 mrad, and the angle can be easily grasped from this relationship.

Next, a method of angle correction in the present embodiment will be described. In the present embodiment, the plane mirror 50 is provided with a plane mirror driving mechanism 51, and the angle is corrected by driving the plane mirror 50. That is, first, the X-ray angle detector 3 at the angle at which the intensity of the X-ray beam 34 is maximized
The output of No. 6 is stored in the angle shift calculation circuit 40. At the time of sample observation, the plane mirror 50 is driven so that the output of the X-ray angle detector 36 has the same value as the output of the X-ray angle detector 36 when the intensity of the X-ray beam 34 stored previously is the maximum. This corrects the angle. By maintaining this state, the intensity of the X-ray beam 34 applied to the sample 37 always keeps the maximum value.

(Third Embodiment) FIG. 8A is a plan view of an X-ray exposure apparatus according to a third embodiment, and FIG. 8B is a side view.

In the present embodiment, the X-ray beam 64 is emitted from the synchrotron radiation light source 63 in the same manner as in the first embodiment. Synchrotron radiation light source 63
The X-ray beam 64 emitted from the mirror is first reflected by a toroidal mirror 83, and then further reflected by a cylindrical mirror 84.
And passes through the beryllium window 85 to expose the circuit pattern of the mask 86 to the wafer 87. An X-ray angle detector 66 is provided beside the toroidal mirror 83, and detects the angle of the X-ray beam 64. The X-ray angle detector 66 includes two collimators (light source side collimator 74a and X-ray side collimator 7) as shown in FIG.
3b) and two ionization chamber type X-ray detectors 90 are used. In the present embodiment, a 0.1 mm thick stainless steel plate having a plurality of slits 75 each having a pitch of 4 mm and a width of 2 mm and a length of 10 mm is used for the light source side collimator 74a and the X-ray side collimator 73b. Light source-side blind collimator 74a and X-ray detector-side blind collimator 74
b is set in the traveling direction of the X-ray beam 64a, and the interval between them is 500 mm. Also, the light source side blind collimator 7
4a and slit 75 of X-ray side blind collimator 73b
Is installed in a direction whose longitudinal direction is orthogonal to the synchrotron electron orbit plane. Further, the slit of the X-ray detector-side blind collimator 74b is connected to the light source-side blind collimator 74a.
X-ray beam 6 in the plane of the synchrotron electron orbit
It is installed with a 1 mm offset in the direction orthogonal to 4a. One of the two ionization chamber type X-ray detectors 90 is X
It is installed immediately after the ray detector side blind collimator 74b,
The other is arranged at a position for receiving the X-ray beam 64b without being blocked by the blind collimator.

The X-ray beam 64a emitted from the synchrotron radiation light source 63 is first converted to a light source side blind collimator 7.
4a, and further to the X-ray detector-side blind collimator 7
4b, and is incident on an ionization chamber type X-ray detector 90 installed immediately after the X-ray detector-side blind collimator 74b.
At this time, it outputs the signals S ₁ that is proportional to the amount of incident. If the intensity of the synchrotron radiation light source 63 is constant, the amount of the X-ray beam 64a incident on the ionization chamber type X-ray detector 90 installed immediately after the X-ray detector side blind collimator 74b is:
It is a function of the angle of the X-ray beam 64a emitted from the synchrotron radiation light source 63. An ionization chamber type X arranged at a position for receiving an X-ray beam 64b which does not pass through the light source side intermittent collimator 74a and the X-ray side intermittent collimator 73b.
Since the output signal S ₂ of the linear detector 90 is proportional to the intensity of the synchrotron radiation light source 63, S ₁ as shown in FIG. 10
/ S ₂ is a function of the angle of the X-ray beam.

In this embodiment, since the distance between the light source side slit plate 44a having a width of 2 mm and the X-ray detector side collimator 74b is 500 mm, for example, the angle of the X-ray beam 64 is 1 mm.
When mrad fluctuates, S ₁ / S ₂ fluctuates by 10%. That is, when S ₁ / S ₂ fluctuates by 10%, the X-ray beam 6
The change in the angle of No. 4 is 1 mrad, and the angle can be easily grasped from this relationship.

Next, a method of angle correction in the present embodiment will be described. In the present embodiment, the angle of the X-ray beam 64 is corrected by moving the electron trajectory 61 of the synchrotron radiation light source 63. That is, the electron trajectory 61 of the synchrotron radiation light source 63, which is an illumination optical system, is moved by the electron trajectory correction electromagnet 88, and a test exposure is performed first.
An arrangement in which the exposure intensity shows a uniform and high value in the exposure area of the wafer 87 is obtained, and the output of the X-ray angle detector 66 at this time is stored in the displacement calculation circuit 89. At the time of exposure, the exciting force of the electron trajectory correction electromagnet 88 is adjusted to correct the position of the electron trajectory 61 so that the output of the X-ray angle detector 66 becomes the same value as the value stored at the time of the test exposure.

As described above, the detection means and the correction means of the incident angle of the X-ray beam have been described from the first embodiment to the third embodiment, but these means may be any combination other than the above. . The combination is a means that can be used for both an X-ray microscope and an X-ray exposure apparatus.

Next, an embodiment of a device manufacturing method using the above-described exposure apparatus or exposure method will be described. FIG. 11 shows a micro device (a semiconductor chip such as an IC or an LSI,
2 shows a flow of manufacturing a liquid crystal panel, a CCD, a thin-film magnetic head, a micromachine, and the like. In step 1 (circuit design), a device pattern is designed. Step 2 is a process for making a mask on the basis of the designed pattern. On the other hand, in step 3 (wafer manufacture), a wafer is manufactured using a material such as silicon or glass. Step 4
The (wafer process) is called a pre-process, and an actual circuit is formed on the wafer by lithography using the prepared mask and wafer. The next step 5 (assembly) is called a post-process, and is a process of forming a semiconductor chip using the wafer produced in step 4, and includes processes such as an assembly process (dicing and bonding) and a packaging process (chip encapsulation). including. Step 6
In (inspection), inspections such as an operation confirmation test and a durability test of the semiconductor device manufactured in step 5 are performed. Through these steps, a semiconductor device is completed and shipped (step 7). FIG. 12 shows a detailed flow of the wafer process. Step 11 (oxidation) oxidizes the wafer's surface. In step 12 (CVD), a green film is formed on the wafer surface. Step 13 (electrode formation)
Then, electrodes are formed on the wafer by vapor deposition. In step 14 (ion implantation), ions are implanted into the wafer.
In step 15 (resist processing), a resist is applied to the wafer. Step 16 (exposure) uses the above-described exposure apparatus or exposure method to align and print the circuit pattern of the mask on a plurality of shot areas of the wafer. Step 17 (development) develops the exposed wafer. In step 18 (etching), portions other than the developed resist image are removed. In step 19 (resist stripping), unnecessary resist after etching is removed. By repeating these steps, multiple circuit patterns are formed on the wafer. By using the production method of the present embodiment, it is possible to produce a large-sized device, which was conventionally difficult to produce, at low cost.

[0042]

As described above, according to the present invention,
By detecting the angle of the X-ray beam emitted from the synchrotron radiation light source and correcting the angle, it is possible to always obtain a high-intensity X-ray beam. Observations, and X
In a line exposure apparatus, highly accurate pattern transfer can always be performed on a wafer.

[Brief description of the drawings]

FIG. 1 is a schematic configuration diagram of an X-ray microscope according to a first embodiment.

FIG. 2 shows a configuration of an example of an X-ray angle detector of the X-ray microscope shown in FIG.

FIG. 3 is a diagram showing a configuration of another example of the X-ray angle detector of the X-ray microscope shown in FIG.

FIG. 4 is a graph showing an output of the X-ray angle detector having the configuration shown in FIG.

FIG. 5 is a schematic configuration diagram of an X-ray microscope according to a second embodiment.

6 is a diagram showing a configuration of an example of an X-ray angle detector of the X-ray microscope shown in FIG.

FIG. 7 is a graph showing an output of an X-ray angle detector having the configuration shown in FIG. 6;

FIG. 8 is a schematic configuration diagram of an X-ray exposure apparatus according to a third embodiment.

9 is a diagram showing a configuration of an example of an X-ray angle detector of the X-ray microscope shown in FIG.

FIG. 10 is a graph showing an output of the X-ray angle detector having the configuration shown in FIG. 9;

FIG. 11 is a diagram illustrating a flow of manufacturing a micro device.

FIG. 12 is a diagram illustrating a detailed flow of a wafer process.

FIG. 13 shows X using a conventional synchrotron radiation light source.
It is a figure explaining a line microscope.

FIG. 14 shows X using a conventional synchrotron radiation light source.
It is a figure explaining a problem in a line microscope.

[Explanation of symbols]

1, 31, 61, 91 Electron orbits 2, 32, 62, 92 Emission points 3, 33, 63, 93 Synchrotron radiation light source 4, 34, 34a, 34b, 64, 64a, 64b, 9
4 X-ray beam 5, 35, 95 Focusing mirror 6, 36, 66, 96 X-ray angle detector 7, 37, 97 Sample 8, 38, 98 Schwarzschild projection optical system 9, 39, 99 X-ray detector 10 , 40 Angle shift operation circuit 11 Stage 12 Stage drive mechanism 13 Surface plate 14 Slit plate 15, 45, 75 Slit 16 One-dimensional position detection type X-ray detector 17 Two-division type X-ray detector 44a Light source side slit plate 44b X-ray Detector side slit plate 50 Planar mirror 51 Planar mirror driving mechanism 52 Scintillation type X-ray detector 74a Light source side collimator 74b X-ray detector side collimator 83 Toroidal mirror 84 Cylindrical mirror 85 Beryllium window 86 Mask 87 Wafer 88 Electronic orbit correcting electromagnet 89 Position shift calculation circuit 90 Ionization chamber type X-ray detector 91a Positive Electron orbit 101 sample observation section shift of the electron trajectories 91b

Claims (10)

[Claims] 1. An optical device having an optical system for guiding synchrotron radiation emitted from a light source to an object to be irradiated, wherein the optical device is arranged at a position where the synchrotron radiation emitted from the light source is incident, and is incident on the optical device. An optical system comprising: a detecting unit that detects an angle; and a correcting unit that corrects the incident angle by moving either the light source or the optical system based on a detection result of the detecting unit. apparatus. 2. The apparatus according to claim 1, wherein the detecting unit includes a slit plate provided with a slit through which the synchrotron radiation passes, and at least a one-dimensional position disposed at a position irradiated with the synchrotron radiation passing through the slit. The optical device according to claim 1, further comprising an optical sensor having a detection function. 3. The detecting means comprises: a slit plate provided with a slit through which the synchrotron radiation passes, and a two-division optical sensor arranged at a position where the synchrotron radiation passing through the slit is irradiated. The optical device according to claim 1, comprising: 4. The detecting means comprises two slit plates which are arranged at intervals in a direction in which the synchrotron radiation travels, and each of which has a slit through which the synchrotron radiation passes. A first optical sensor disposed at a position irradiated with the synchrotron radiation light having passed through two slit plates, and disposed at a position irradiated with the synchrotron radiation light without passing through the two slit plates. The optical device according to claim 1, further comprising a second optical sensor. 5. The apparatus according to claim 1, wherein the detecting means is disposed at intervals in a direction in which the synchrotron radiation travels, and each of the blind collimators is provided with a slit through which the synchrotron radiation passes. A first optical sensor disposed at a position to be irradiated with the synchrotron radiation light passing through the two blind collimators; and a first optical sensor disposed at a position to be irradiated by the synchrotron radiation light without passing through the two blind collimators. The optical device according to claim 1, further comprising a second optical sensor. 6. A correcting device for correcting the incident angle, a calculating device for calculating a correction angle of the incident angle based on an input from the detecting device, and the optical system based on a calculation result of the calculating device. 4. The optical device according to claim 1, further comprising: a driving mechanism configured to drive by an amount corresponding to the correction angle of the incident angle. 7. A correction device for correcting the incident angle, a calculating device for calculating a correction angle of the incident angle based on an input from the detecting device, and a synchrotron radiation based on a calculation result of the calculating device. The optical device according to claim 1, further comprising a driving mechanism that drives a reflecting mirror that changes a traveling direction of light by an amount corresponding to the correction angle of the incident angle. 8. A correcting device for correcting the incident angle, a calculating device for calculating a correction angle of the incident angle based on an input from the detecting device, and an electron trajectory of a light source based on a calculation result of the calculating device. The electromagnet according to claim 1, further comprising: an electromagnet that moves the light beam by an amount corresponding to the correction angle of the incident angle. 9. irradiating a sample with synchrotron radiation,
An X-ray microscope for observing the sample by detecting the synchrotron radiation transmitted through the sample, a light source that emits the synchrotron radiation, The light source according to any one of claims 1 to 8. An X-ray microscope comprising: the optical device according to (1); and a detecting unit configured to detect the synchrotron radiation transmitted through the sample. 10. An X-ray exposure apparatus that irradiates a mask with synchrotron radiation and transfers the pattern of the mask onto a wafer, wherein the light source radiates the synchrotron radiation. An X-ray exposure apparatus comprising: the optical device according to claim 1.