JPH11183111A - Method for measuring change in film thickness and its device - Google Patents

Method for measuring change in film thickness and its device

Info

Publication number
JPH11183111A
JPH11183111A JP35496697A JP35496697A JPH11183111A JP H11183111 A JPH11183111 A JP H11183111A JP 35496697 A JP35496697 A JP 35496697A JP 35496697 A JP35496697 A JP 35496697A JP H11183111 A JPH11183111 A JP H11183111A
Authority
JP
Japan
Prior art keywords
film thickness
measuring
measurement
eddy current
current sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP35496697A
Other languages
Japanese (ja)
Inventor
Katsushi Ishikawa
勝士 石川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP35496697A priority Critical patent/JPH11183111A/en
Publication of JPH11183111A publication Critical patent/JPH11183111A/en
Pending legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To enable the speedy and accurate simultaneous measurement of film thickness and variations in film thickness without individually measuring the substrate surface and film forming surface of a body to be measured by measuring film thickness by an eddy current sensor and calculating changes in film thickness on the basis of the measurement results of a contact-type displacement measuring device which scans simultaneously with the eddy current sensor. SOLUTION: An object to be measured W is placed at a predetermined location on a measuring table 2 on a base 1 and is fixed by a fixing means. Next, the location of a part to be measured of the object W is matched to the location of a measuring terminal 8. With this state maintained, a contact-type displacement detector 5 is lowered by a vertically driving machine provided for a stand 3. The measuring terminal 8 of an eddy current sensor 7 integrally installed to the displacement detector 5 comes into contact with the surface of a film to be measured W2 of the object W. Next, the measuring table 2 is moved by a predetermined amount and is set in an X-direction. The scanning of the table 2 is started by an instruction from a control part 10, and measurement data from the eddy current sensor 7 and the displacement detector 5 is inputted to a measurement data processing part 11. In other words, the amount of displacement of the detector 5 is related to the data of the sensor 7.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、導電体表面に形成
された非導電膜の膜厚、膜厚変化及び膜厚むらを測定す
る方法とその装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method and an apparatus for measuring the thickness of a non-conductive film formed on the surface of a conductor, the change in the thickness and the unevenness of the thickness.

【0002】[0002]

【従来の技術】金属体の表面に非導電膜がコーティング
等で形成された部品は、例えば、電子複写機のローラ等
をはじめ多くの電子機器で広く用いられている。
2. Description of the Related Art A component in which a nonconductive film is formed on a surface of a metal body by coating or the like is widely used in many electronic devices such as a roller of an electronic copying machine.

【0003】これらの膜厚や膜厚むらは、部品の機能と
密接な関係があるので機能に応じてそれぞれ所定の管理
が行われている。
[0003] Since these film thicknesses and film thickness unevenness are closely related to the function of the component, predetermined management is performed for each function.

【0004】例えば、コーティングされた膜厚と膜厚む
らを測定する方法としては、渦電流センサや接触式変位
検出器や寸法測定器が用いられている。
For example, an eddy current sensor, a contact type displacement detector, and a dimension measuring device are used as a method of measuring the thickness of the coated film and the unevenness of the film thickness.

【0005】つまり、渦電流センサを使用する場合は、
被測定物の膜の表面に渦電流センサの測定端子を接触さ
せて、その位置から下地である基材面までに距離を膜厚
として測定する。膜厚むらの測定は被測定体の各位置の
膜厚の測定結果から判断する。
That is, when using an eddy current sensor,
The measurement terminal of the eddy current sensor is brought into contact with the surface of the film of the object to be measured, and the distance from the position to the surface of the base material as the base is measured as the film thickness. The measurement of the film thickness unevenness is determined from the measurement result of the film thickness at each position of the measured object.

【0006】接触式変位検出器を使用する場合は、ま
づ、定盤か移動テーブルの上に膜付け前の下地面の状態
の被測定物を載置し、被測定物を動かしたときの変位を
測定する。次に、下地面に膜付け後同様の方法で膜の表
面の変化を測定する。この2つの測定結果から下地面の
形状に対する膜厚の変化を求めることで膜厚むらを測定
している。
When a contact type displacement detector is used, first, when an object to be measured in a state of a lower ground surface before film coating is placed on a surface plate or a moving table and the object to be measured is moved. Measure the displacement. Next, a change in the surface of the film is measured in the same manner after the film is formed on the base surface. The film thickness unevenness is measured by obtaining a change in the film thickness with respect to the shape of the base surface from the two measurement results.

【0007】寸法測定器を使用する場合は、同一位置に
ついて下地面の状態と膜付け後の寸法を複数位置で測定
し、膜付け前後の寸法変化を求めることで膜厚むらを測
定している。
When a dimension measuring device is used, the state of the base surface and the dimensions after film formation are measured at a plurality of positions at the same position, and the film thickness unevenness is measured by obtaining a dimensional change before and after the film formation. .

【0008】また、被測定物の変位の測定は、図5に示
すように非接触式の変位検出器が用いられる場合もあ
る。すなわち図5において、基台1″の上に設けられ所
定方向へ移動自在な測定テーブル2″に被測定物W″を
載置し、基台1″に所定間隔で立設した2本のスタンド
20、21には、一方に非接触変位計22が設けられ、
他方には渦電流センサ8″と反射板23がばね15を介
してアーム4″に懸架されている。なお、反射板23は
非接触センサ22の下方に位置するように配置されてい
る。
In some cases, a non-contact type displacement detector is used to measure the displacement of the object to be measured, as shown in FIG. That is, in FIG. 5, the object to be measured W "is placed on a measurement table 2" which is provided on a base 1 "and is movable in a predetermined direction, and two stands which stand on the base 1" at predetermined intervals. Non-contact displacement gauges 22 are provided on one of 20, 21.
On the other hand, an eddy current sensor 8 "and a reflector 23 are suspended on an arm 4" via a spring 15. Note that the reflection plate 23 is disposed so as to be located below the non-contact sensor 22.

【0009】[0009]

【発明が解決しようとする課題】上述のような各測定方
法によると、コーティング膜の膜厚むらの測定では、膜
の下地面と膜厚との関係が同時に測定できない。従っ
て、通常これらの関係を求めるには、膜の下地面の状態
と膜付け後の状態とをそれぞれ測定して双方の測定結果
を照合することによって求めている場合が多い。この場
合は、膜の下地面の測定位置と膜付け後の測定位置を正
確に合せることが困難ななため正しい値を得ることが難
しい。
According to the above-described measuring methods, in the measurement of the film thickness unevenness of the coating film, the relationship between the under ground of the film and the film thickness cannot be measured simultaneously. Therefore, in many cases, these relationships are usually obtained by measuring the state of the ground under the film and the state after the film is applied, and comparing the measured results. In this case, it is difficult to accurately match the measurement position on the ground under the film with the measurement position after the film is applied, so that it is difficult to obtain a correct value.

【0010】また、測定を膜厚前後で行う必要があるこ
とや、それぞれの測定に応じて異なった測定器を使用す
る場合も有るので、測定時間や測定コストがかかり好ま
しくない。
In addition, since it is necessary to perform the measurement before and after the film thickness, and different measuring instruments may be used for each measurement, the measurement time and the measurement cost are not preferable.

【0011】非接触式の変位検出器を用いた場合は、接
触式変位検出器に比べて測定範囲が狭く、更に、被測定
物Wが曲率面の場合は測定装置が複雑になる。
When a non-contact type displacement detector is used, the measurement range is narrower than that of a contact type displacement detector, and when the workpiece W has a curved surface, the measuring device becomes complicated.

【0012】本発明はそれらの事情に基づいてなされて
もので、被測定体の下地面と成膜面とを別々に測定する
ことなく同時に測定することで、迅速で正確な膜厚と膜
厚むらの測定方法と装置を提供するものである。
Since the present invention has been made based on these circumstances, it is possible to measure the lower ground surface and the film-forming surface of an object to be measured at the same time without separately measuring them, thereby achieving a quick and accurate film thickness and film thickness. An object of the present invention is to provide a method and an apparatus for measuring unevenness.

【0013】[0013]

【課題を解決するための手段】本発明によれば、導電体
の表面に形成された非導電膜の膜厚変化の測定方法にお
いて、膜厚は渦電流センサで測定し、膜厚変化は前記渦
電流センサと同時に走査される接触式変位測定器の測定
結果に基づいて算出することを特徴とする膜厚変化の測
定方法にある。
According to the present invention, there is provided a method for measuring a change in film thickness of a non-conductive film formed on a surface of a conductor, wherein the film thickness is measured by an eddy current sensor, and the change in film thickness is measured by the eddy current sensor. There is provided a method for measuring a change in film thickness, characterized in that it is calculated based on a measurement result of a contact type displacement measuring device scanned simultaneously with an eddy current sensor.

【0014】また本発明によれば、導電体の表面に形成
された非導電膜の膜厚変化の測定方法において、膜厚は
渦電流センサで測定し、膜厚変化はこの渦電流センサと
共通の測定端子を用いて作動する接触式変位測定器の測
定結果に基づいて算出することを特徴とする膜厚変化の
測定方法にある。
According to the present invention, in the method for measuring the change in the thickness of the non-conductive film formed on the surface of the conductor, the thickness is measured by an eddy current sensor, and the change in the thickness is common to the eddy current sensor. And measuring the change in film thickness, based on a measurement result of a contact displacement measuring device that operates using the measurement terminal.

【0015】また本発明によれば、前記非導電膜はアル
ミローラの表面にコーティングされたテフロン膜である
ことを特徴とする膜厚変化の測定方法にある。また本発
明によれば、導電体の表面に非導電膜が形成された被測
定体を載置する測定テーブルと、この測定テーブルと相
対的に走査自在に設けられた測定部とを具備した膜厚変
化測定装置において、前記測定部は前記非導電膜の表面
に接触して膜厚を測定する渦電流センサとこの渦電流セ
ンサが膜厚を測定している間の渦電流センサの変位量を
検出する接触式変位検出器とを有することを特徴とする
膜厚変化の測定装置にある。
According to the present invention, there is provided a method for measuring a change in film thickness, wherein the non-conductive film is a Teflon film coated on the surface of an aluminum roller. Further, according to the present invention, there is provided a film having a measurement table on which a measurement object having a non-conductive film formed on a surface of a conductor is placed, and a measurement unit provided to be scannable relative to the measurement table. In the thickness change measuring device, the measuring unit measures an amount of displacement of the eddy current sensor while the eddy current sensor measures the film thickness by contacting the surface of the non-conductive film and measures the film thickness. And a contact-type displacement detector for detecting the change in film thickness.

【0016】また本発明によれば、 前記渦電流センサ
と前記変位検出器は共通の測定端子を用いて作動し、変
位検出器が有するばねによって測定端子に圧力を付与し
ていることを特徴とする膜厚変化の測定装置にある。
According to the present invention, the eddy current sensor and the displacement detector operate using a common measurement terminal, and a pressure is applied to the measurement terminal by a spring of the displacement detector. Measuring device for measuring the change in film thickness.

【0017】[0017]

【発明の実施の形態】以下本発明の実施の形態を図面を
参照して説明する。
Embodiments of the present invention will be described below with reference to the drawings.

【0018】図1は本発明の実施の形態を示す膜厚及び
膜厚むらの測定装置の斜視図で、図2は本発明の実施の
形態を示す膜厚及び膜厚むら測定装置の動作を示す説明
図である。
FIG. 1 is a perspective view of a film thickness and film thickness unevenness measuring apparatus according to an embodiment of the present invention, and FIG. 2 is a diagram showing the operation of the film thickness and film thickness unevenness measuring apparatus according to the embodiment of the present invention. FIG.

【0019】被測定物Wは導電体たる金属で形成された
下地体W1の表面に被測定膜W2である非導電性の薄膜
が形成されている。この被測定物Wは基台1に設けられ
たに測定テーブル2の上の所定位置に載置され固定され
ている。測定テーブル2は基台1に対して図示しない駆
動装置によって水平方向にスライド自在に設けられてい
る。
The test object W has a non-conductive thin film as a test film W2 formed on the surface of a base body W1 formed of a metal as a conductor. The object to be measured W is placed and fixed at a predetermined position on a measurement table 2 provided on the base 1. The measurement table 2 is slidably provided in the horizontal direction with respect to the base 1 by a driving device (not shown).

【0020】また、基台1の一端にはスタンド3が立設
されている。このスタンド3には直角方向に延びたアー
ム4が設けられている。このアーム4は先端部に接触式
変位検出器5を保持している。
A stand 3 is provided at one end of the base 1. The stand 3 is provided with an arm 4 extending in a right angle direction. This arm 4 holds a contact type displacement detector 5 at the tip.

【0021】この接触式変位検出器5は、上部に検出器
本体部5aが設けられ、下部に固定治具6が直線案内構
造で案内され、かつ、所定の張力に調整されたばね15
で懸架されている。従って、固定治具6は10mm程度
のストロークで上下方向へのみ変位が可能な構造を形成
している。
The contact type displacement detector 5 has a detector main body 5a provided at an upper part, a fixing jig 6 guided at a lower part by a linear guide structure, and a spring 15 adjusted to a predetermined tension.
Suspended by. Therefore, the fixing jig 6 has a structure that can be displaced only in the vertical direction with a stroke of about 10 mm.

【0022】固定治具6はアルミニウ等の軽量材料製で
一端に渦電流センサ7の測定端子8を保持し、この渦電
流センサ7の測定端子8は固定治具6から下方に垂直に
延在している。これにより測定端子8は常に所定の測定
圧を被測定物Wに付与する。
The fixing jig 6 is made of a lightweight material such as aluminum, and has a measurement terminal 8 of the eddy current sensor 7 at one end. The measurement terminal 8 of the eddy current sensor 7 extends vertically downward from the fixing jig 6. doing. As a result, the measurement terminal 8 always applies a predetermined measurement pressure to the measured object W.

【0023】接触式変位検出器5と渦電流センサ7は制
御装置9に接続している。この制御装置9は、装置全体
を制御する制御部10と、接触式変位検出器5と渦電流
センサ7とのそれぞれの測定データの相互関係を照合す
る測定データ処理部11とから構成されている。
The contact type displacement detector 5 and the eddy current sensor 7 are connected to a control device 9. The control device 9 includes a control unit 10 that controls the entire device, and a measurement data processing unit 11 that checks a mutual relationship between respective measurement data of the contact displacement detector 5 and the eddy current sensor 7. .

【0024】測定データ処理部11は接触式変位検出器
5と渦電流センサ7からの測定データを同期させて取り
込む機能と、取り込んだ測定データから接触式変位検出
器5の位置データを基準として、これに対する渦電流セ
ンサ7の測定データを対応させる機能を有している。
The measurement data processing unit 11 has a function of synchronizing and acquiring measurement data from the contact type displacement detector 5 and the eddy current sensor 7, and a function based on the position data of the contact type displacement detector 5 based on the acquired measurement data. It has a function to correspond the measurement data of the eddy current sensor 7 to this.

【0025】すなわち、測定端子8を被測定膜W2の表
面を走査することにより得た測定データを基に、被測定
膜W2の表面の形状に対する膜厚の変化を計算すること
で膜厚むらを算出している。
That is, based on the measurement data obtained by scanning the surface of the film to be measured W2 with the measuring terminal 8, the change in the film thickness with respect to the shape of the surface of the film to be measured W2 is calculated, so that the film thickness unevenness is obtained. It has been calculated.

【0026】以下に、上記装置の作用を説明する。The operation of the above device will be described below.

【0027】まず、被測定物Wを基台1上の測定テーブ
ル2の所定位置に載置して図示しないマグネットチャッ
ク等の固定手段によって固定する。次に、被測定物Wの
被測定部と測定端子8の位置を一致させる。この一致方
法はY方向についてはスタンド3に係合したアーム4を
所定角度回動させて所定位置に設定する。また、X方向
については基台1上の測定テーブル2を所定量移動させ
て所定位置に設定する。この状態で、接触式変位検出器
5をスタンド3に設けられた図示しない垂直方向駆動機
構により静かに下降させる。この下降により接触式変位
検出器5に一体に装着されている渦電流センサ7の測定
端子8が被測定体の被測定膜W2の表面に接触する。次
に、X方向については基台1上の測定テーブル2を所定
量移動させて所定位置に設定し、測定開始位置の位置決
めを行う。
First, the object to be measured W is placed at a predetermined position on the measurement table 2 on the base 1 and fixed by fixing means such as a magnet chuck (not shown). Next, the position of the part to be measured of the object to be measured W and the position of the measuring terminal 8 are matched. In this matching method, the arm 4 engaged with the stand 3 is rotated by a predetermined angle in the Y direction and set to a predetermined position. In the X direction, the measurement table 2 on the base 1 is moved by a predetermined amount and set at a predetermined position. In this state, the contact type displacement detector 5 is gently lowered by a vertical driving mechanism (not shown) provided on the stand 3. Due to this lowering, the measurement terminal 8 of the eddy current sensor 7 integrally mounted on the contact type displacement detector 5 comes into contact with the surface of the measurement target film W2 of the measurement target. Next, in the X direction, the measurement table 2 on the base 1 is moved by a predetermined amount and set to a predetermined position, and the measurement start position is positioned.

【0028】次に、制御部10からの指令により測定テ
ーブル2が所定速度で走査を開始する。この走査により
逐次渦電流センサ7と接触式変位検出器5から測定デー
タが測定データ処理部11に入力される。
Next, the measurement table 2 starts scanning at a predetermined speed in response to a command from the control unit 10. By this scanning, measurement data is sequentially input from the eddy current sensor 7 and the contact type displacement detector 5 to the measurement data processing unit 11.

【0029】その際、渦電流センサ7は、測定端子8が
接触式変位検出器5からの測定圧を付与して精密に膜の
表面を追従するので、常に膜厚を正確に測定することが
出来る。
At this time, in the eddy current sensor 7, since the measuring terminal 8 applies the measurement pressure from the contact type displacement detector 5 and follows the film surface precisely, the film thickness can always be measured accurately. I can do it.

【0030】また、接触式変位検出器5は測定端子8が
渦電流センサ7の測定端子8と兼用しているので、常に
膜厚表面を所定の測定圧で追従し、膜の表面の正確な変
位量を測定する。
Since the contact type displacement detector 5 has the measurement terminal 8 also serving as the measurement terminal 8 of the eddy current sensor 7, the contact type displacement detector 5 always follows the film thickness surface with a predetermined measurement pressure, so that the film surface can be accurately measured. Measure the displacement.

【0031】測定データ処理部11に入力された接触式
変位検出器5と渦電流センサ7からの測定データは、接
触式変位検出器5の位置データを基準としてそれぞれの
位置の膜厚は渦電流センサ7から得られ、また、接触式
変位検出器5からの変位量の測定データを渦電流センサ
7からのデータと照合・対応させることによって、下地
面の形状と膜厚の関係を求めることが出来る。
The measurement data input from the contact type displacement detector 5 and the eddy current sensor 7 input to the measurement data processing unit 11 is based on the position data of the contact type displacement detector 5 as a reference. The relationship between the shape of the ground surface and the film thickness can be obtained by comparing and correlating the measurement data of the displacement amount obtained from the sensor 7 and the displacement amount from the contact displacement detector 5 with the data from the eddy current sensor 7. I can do it.

【0032】つまり、図3(a)〜(d)で示すよう
に、渦電流センサ7からは膜厚の測定により図3(b)
のデータ(A)得られ、また、接触式変位検出器5から
は図3(c)のデータ(B)が得られる。従って、図3
(d)のようにこの2つのデータ(B−A)を重ね合せ
ることにより膜厚むらを正確に検出することが出来る。
That is, as shown in FIGS. 3 (a) to 3 (d), the eddy current sensor 7 measures
The data (A) of FIG. 3 is obtained, and the data (B) of FIG. Therefore, FIG.
By overlaying these two data (BA) as in (d), the film thickness unevenness can be accurately detected.

【0033】従って、以上のような膜厚及び膜厚むらの
測定装置による測定方法を行えば、一度の測定で正確か
つ迅速に膜厚と膜厚むらを同時に得ることが出来る。
Therefore, by performing the above-described measuring method using the film thickness and film thickness nonuniformity measuring device, it is possible to obtain the film thickness and the film thickness nonuniformity simultaneously and accurately with a single measurement.

【0034】次に、図4に基づいて本発明の他の実施の
形態を説明する。
Next, another embodiment of the present invention will be described with reference to FIG.

【0035】上述の実施の形態では、被測定物Wが平面
の下地体W2の表面上に形成された被測定膜W2で、そ
の膜厚を測定したが、ここでは他の実施の形態として被
測定物Wが円筒状の場合について説明する。すなわち、
この実施の形態では被測定膜W2は円筒状の下地体W
2′の表面上に円筒状に形成されている。
In the above-described embodiment, the thickness of the object to be measured W is measured with the film to be measured W2 formed on the surface of the planar base body W2. The case where the measurement object W is cylindrical will be described. That is,
In this embodiment, the film to be measured W2 is a cylindrical substrate W
It is formed in a cylindrical shape on the surface of 2 '.

【0036】基本的構成は上述の実施の形態と同様であ
るので、同様部分についての説明は省略する。ただ、上
述の実施の形態の場合は被測定膜Wが平面であるため位
置の検出を直線で検出したが、この実施の形態では被測
定膜W2′が円筒状であるため、円筒体を回転させて回
転毎の位置検出で、膜厚と変位量を同時に測定する。
Since the basic configuration is the same as that of the above-described embodiment, the description of the same parts will be omitted. However, in the above-described embodiment, the position of the film to be measured is detected by a straight line because the film to be measured W is flat, but in this embodiment, since the film to be measured W2 'is cylindrical, the cylindrical body is rotated. Then, the film thickness and the displacement amount are simultaneously measured by the position detection for each rotation.

【0037】すなわち、基台1′の上に設けられた測定
テーブル2′は円盤状で回転軸を中心に回転自在に形成
されている。また、この回転軸の半径方向に沿って移動
自在な測定端子8′を有する渦電流センサ7を保持した
接触式変位検出器5′が立設したスタンド3′に設けら
れている。このスタンド3′はXYテーブル12の上に
載置され、測定端子8′の作動方向が常に測定テーブル
2′の回転中心に対して向かうように調整されている。
That is, the measurement table 2 'provided on the base 1' is formed in a disk shape and is rotatable around a rotation axis. A contact type displacement detector 5 'holding an eddy current sensor 7 having a measuring terminal 8' movable along the radial direction of the rotating shaft is provided on an upright stand 3 '. The stand 3 'is placed on the XY table 12, and the operating direction of the measuring terminal 8' is adjusted so as to always face the rotation center of the measuring table 2 '.

【0038】この装置により円筒状の被測定膜W2′に
ついて測定する場合、まづ、測定テーブル2′の回転中
心に、被測定物Wである円筒体の回転中心を精密に一致
させる。円筒体の回転中心は、すなわち円筒体を構成す
る導電体の回転中心である。
When measuring a cylindrical film W2 'to be measured by this device, first, the center of rotation of the cylindrical body as the object W to be measured is made to exactly coincide with the center of rotation of the measuring table 2'. The center of rotation of the cylindrical body is the center of rotation of the conductor forming the cylindrical body.

【0039】次に、スタンド3′を載置しているXYテ
ーブル12を静かに作動させて測定端子8′が被測定膜
W2′に接触するように調整する。この状態で測定テー
ブル2′を静かに回転させて測定開始位置に設定する。
以後は上述の実施の形態と同様に制御部10からの指令
により測定を開始し、それぞれの測定データを測定デー
タ所処理部11に入力して膜厚と膜厚むらの測定結果を
得る。
Next, the XY table 12 on which the stand 3 'is placed is gently operated to adjust the measurement terminal 8' so as to contact the film W2 'to be measured. In this state, the measurement table 2 'is gently rotated to set the measurement start position.
Thereafter, the measurement is started by a command from the control unit 10 as in the above-described embodiment, and each measurement data is input to the measurement data processing unit 11 to obtain the measurement results of the film thickness and the film thickness unevenness.

【0040】これらの実施の形態では、測定端子8とば
ね15が同方向に別部位に設けられているが、同一位置
に同軸に設けることにより測定端子8´とばね15´を
支持している固定治具6の歪みが測定結果に影響を及ぼ
さないものとなっている。
In these embodiments, the measuring terminal 8 and the spring 15 are provided at different positions in the same direction, but are provided coaxially at the same position to support the measuring terminal 8 'and the spring 15'. The distortion of the fixing jig 6 does not affect the measurement result.

【0041】[0041]

【発明の効果】以上に述べたように、本発明によれば被
測定物の膜厚を測定する渦電流センサと膜厚の変位量を
測定する接触式変位測定器を同時に走査して、膜厚デー
タと膜厚の変位量データとを同時に測定位置毎に得られ
るようにした。
As described above, according to the present invention, the eddy current sensor for measuring the film thickness of the object to be measured and the contact type displacement measuring device for measuring the amount of displacement of the film thickness are simultaneously scanned to obtain the film. The thickness data and the displacement data of the film thickness are simultaneously obtained for each measurement position.

【0042】従って、それらの測定データを比較照合す
ることにより、下地面の変動データと膜表面の変動デー
タとを把握することが出来、一度の測定で迅速・正確に
膜厚と膜厚むらを測定することが出来る。
Therefore, by comparing and comparing the measured data, it is possible to grasp the fluctuation data of the base surface and the fluctuation data of the film surface, and to quickly and accurately measure the film thickness and the film thickness unevenness in one measurement. Can be measured.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の一実施の形態を示す装置全体の概要
図。
FIG. 1 is a schematic diagram of an entire apparatus according to an embodiment of the present invention.

【図2】本発明の一実施の形態の装置の動作を説明する
説明図。
FIG. 2 is an explanatory diagram illustrating an operation of the device according to the embodiment of the present invention.

【図3】(a)本発明の実施の形態の測定原理の要部を
示す概要図。(b)本発明の実施の形態による渦電流セ
ンサからの出力データを示すグラフ。(c)本発明の実
施の形態による接触式変位検出器からの出力データを示
すグラフ。(d)本発明の実施の形態による渦電流セン
サからの出力データと接触式変位検出器からの出力デー
タを合成したグラフ。
FIG. 3A is a schematic diagram showing a main part of a measurement principle according to an embodiment of the present invention. (B) A graph showing output data from the eddy current sensor according to the embodiment of the present invention. (C) A graph showing output data from the contact displacement detector according to the embodiment of the present invention. (D) A graph combining output data from the eddy current sensor and output data from the contact displacement detector according to the embodiment of the present invention.

【図4】本発明の他の実施の形態を示す装置全体の概要
図。
FIG. 4 is a schematic diagram of the entire apparatus showing another embodiment of the present invention.

【図5】変位検出器に非接触センサを用いた概要図。FIG. 5 is a schematic diagram using a non-contact sensor as a displacement detector.

【符号の説明】[Explanation of symbols]

1、1′…基台、2、2′…測定テーブル、3、3′…
スタンド、5、5′…接触式変位検出器、7、7′…渦
電流センサ、8、8′…測定端子、9…制御装置、11
…測定データ処理部、15…ばね、W、W′…被測定
物、W1、W1′…下地体、W2、W2′…被測定膜
1, 1 '... base, 2', measurement table, 3, 3 '...
Stand, 5, 5 '... contact type displacement detector, 7, 7' ... eddy current sensor, 8, 8 '... measuring terminal, 9 ... control device, 11
... Measurement data processing unit, 15 ... Spring, W, W '... Measurement object, W1, W1' ... Substrate, W2, W2 '... Measurement film

Claims (5)

【特許請求の範囲】[Claims] 【請求項1】 導電体の表面に形成された非導電膜の膜
厚変化の測定方法において、膜厚は渦電流センサで測定
し、膜厚変化は前記渦電流センサと同時に走査される接
触式変位測定器の測定結果に基づいて算出することを特
徴とする膜厚変化の測定方法。
1. A method for measuring a change in film thickness of a non-conductive film formed on a surface of a conductor, wherein the film thickness is measured by an eddy current sensor, and the change in film thickness is scanned simultaneously with the eddy current sensor. A method for measuring a change in film thickness, which is calculated based on a measurement result of a displacement measuring device.
【請求項2】 導電体の表面に形成された非導電膜の膜
厚変化の測定方法において、膜厚は渦電流センサで測定
し、膜厚変化はこの渦電流センサと共通の測定端子を用
いて作動する接触式変位測定器の測定結果に基づいて算
出することを特徴とする膜厚変化の測定方法。
2. A method for measuring a change in film thickness of a non-conductive film formed on a surface of a conductor, wherein the film thickness is measured with an eddy current sensor, and the change in film thickness is measured using a common measurement terminal with the eddy current sensor. A method for measuring a change in film thickness, characterized in that it is calculated on the basis of a measurement result of a contact displacement measuring device that operates by a manual operation.
【請求項3】 前記非導電膜はアルミローラの表面にコ
ーティングされたテフロン膜であることを特徴とする請
求項1記載の膜厚変化の測定方法。
3. The method according to claim 1, wherein the non-conductive film is a Teflon film coated on a surface of an aluminum roller.
【請求項4】 導電体の表面に非導電膜が形成された被
測定体を載置する測定テーブルと、この測定テーブルと
相対的に走査自在に設けられた測定部とを具備した膜厚
変化測定装置において、前記測定部は前記非導電膜の表
面に接触して膜厚を測定する渦電流センサとこの渦電流
センサが膜厚を測定している間の渦電流センサの変位量
を検出する接触式変位検出器とを有することを特徴とす
る膜厚変化の測定装置。
4. A film thickness change comprising a measurement table on which an object to be measured having a non-conductive film formed on a surface of a conductor is placed, and a measurement section provided to be scannable relative to the measurement table. In the measuring device, the measuring unit detects an amount of displacement of the eddy current sensor while the eddy current sensor measures the film thickness by contacting the surface of the non-conductive film and measures the film thickness. An apparatus for measuring a change in film thickness, comprising: a contact-type displacement detector.
【請求項5】 前記渦電流センサと前記変位検出器は共
通の測定端子を用いて作動し、変位検出器が有するばね
によって測定端子に圧力を付与していることを特徴とす
る請求項4記載の膜厚変化の測定装置。
5. The apparatus according to claim 4, wherein the eddy current sensor and the displacement detector operate using a common measurement terminal, and apply pressure to the measurement terminal by a spring included in the displacement detector. Measurement device for film thickness change.
JP35496697A 1997-12-24 1997-12-24 Method for measuring change in film thickness and its device Pending JPH11183111A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP35496697A JPH11183111A (en) 1997-12-24 1997-12-24 Method for measuring change in film thickness and its device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP35496697A JPH11183111A (en) 1997-12-24 1997-12-24 Method for measuring change in film thickness and its device

Publications (1)

Publication Number Publication Date
JPH11183111A true JPH11183111A (en) 1999-07-09

Family

ID=18441084

Family Applications (1)

Application Number Title Priority Date Filing Date
JP35496697A Pending JPH11183111A (en) 1997-12-24 1997-12-24 Method for measuring change in film thickness and its device

Country Status (1)

Country Link
JP (1) JPH11183111A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002141339A (en) * 2000-11-07 2002-05-17 Ulvac Japan Ltd Vacuum processor and vacuum processing method
CN102607387A (en) * 2011-12-20 2012-07-25 南京叁迪焊接设备有限公司 System for quantitatively measuring detecting hole and detecting surface of welding hole of white automobile body
CN103033123A (en) * 2012-12-12 2013-04-10 北京必创科技有限公司 Displacement measurement device
CN103175458A (en) * 2011-12-20 2013-06-26 旺宏电子股份有限公司 Measuring device and method for measuring film thickness
CN103615964A (en) * 2013-11-25 2014-03-05 王贵 Environment-controllable automatic thickness measuring device of thin liquid film
CN103791806A (en) * 2014-02-25 2014-05-14 福建宁德核电有限公司 Rapid adjustment and installation mechanism for eddy current displacement sensor
CN105241413A (en) * 2015-09-22 2016-01-13 苏州工业园区职业技术学院 Multi-angle film thickness detection device

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002141339A (en) * 2000-11-07 2002-05-17 Ulvac Japan Ltd Vacuum processor and vacuum processing method
JP4642212B2 (en) * 2000-11-07 2011-03-02 株式会社アルバック Vacuum processing apparatus and vacuum processing method
CN102607387A (en) * 2011-12-20 2012-07-25 南京叁迪焊接设备有限公司 System for quantitatively measuring detecting hole and detecting surface of welding hole of white automobile body
CN103175458A (en) * 2011-12-20 2013-06-26 旺宏电子股份有限公司 Measuring device and method for measuring film thickness
CN103033123A (en) * 2012-12-12 2013-04-10 北京必创科技有限公司 Displacement measurement device
CN103615964A (en) * 2013-11-25 2014-03-05 王贵 Environment-controllable automatic thickness measuring device of thin liquid film
CN103791806A (en) * 2014-02-25 2014-05-14 福建宁德核电有限公司 Rapid adjustment and installation mechanism for eddy current displacement sensor
CN105241413A (en) * 2015-09-22 2016-01-13 苏州工业园区职业技术学院 Multi-angle film thickness detection device

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