JPH1116826A - Method and device for alignment - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain a good alignment accuracy and a high through put at the same time. SOLUTION: Multiple aligned objects which are formed on multiple substrates according to a predetermined arrangement are to be aligned sequentially in a given reference position. The position of the objects S1, S2,... to be aligned on one substrate is measured sequentially, and as for the relationship between the measured position and a designed position, a parameter for conversion is determined so that the whole difference of the all measured positions may be minimum. Several objects S9, S21, S24 and S27 to be aligned are selected and a parameter for conversion is determined so that the error may be minimum when described with the specified parameter. The designed position of each aligned object is converted according to the relationship with the determined parameter, and the position of each aligned object is determined. The aligned objects are positioned sequentially.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus which requires precise alignment means, for example, a reduction projection type exposure apparatus for projecting and exposing an electronic circuit pattern onto a semiconductor substrate, etc. The present invention relates to an alignment method and apparatus, and a device manufacturing method which can use them.

[0002]

2. Description of the Related Art In recent years, the degree of integration of semiconductors represented by DRAMs has become remarkably high, and the pattern dimensions formed on semiconductor elements have been on the order of submicrons with the increase in integration. From such a background, in a semiconductor exposure apparatus, technical development for improving the alignment accuracy between a mask and a wafer has been actively performed. A so-called stepper of a reduced projection type is widely used as a semiconductor exposure apparatus.

FIG. 8A is a schematic view showing an example of a reduction projection type semiconductor exposure apparatus. As shown in FIG. 1, an exposure light beam emitted from an exposure illumination system mounts an electronic circuit pattern formed on a reticle R on a stage 11 that can move two-dimensionally via a projection optical system 1. The wafer W is projected and exposed. S in the figure is a positioning optical system for detecting a position in the x direction. In addition, a similar positioning optical system (not shown) is mounted to detect the position in the y direction. Prior to exposure, relative positioning between the reticle R and the wafer W is performed according to the following procedure.

The wafer W is moved by a wafer transfer device (not shown).
Is mounted on the XY stage 11, the CPU 9 moves the stage so that the alignment mark Mlx formed on the first measurement shot S1 shown in FIG. A command is sent to the driving device 10 to drive the XY stage 11. Here, the luminous flux emitted from the alignment illuminating device 2 that irradiates the non-exposure light passes through the beam splitter 3, the reticle R, and the projection optical system 1, and the alignment mark Mlx (hereinafter, also referred to as a wafer mark). Lighting). Wafer mark Mlx
As shown in FIG. 8 (b), it is obtained by arranging a plurality of rectangular patterns of the same shape with a fixed pitch lambda _p.

The light beam reflected from the wafer mark Mlx is
The beam WM reaches the beam splitter 3 again via the projection optical system 1 and the reticle R, is reflected there, and is reflected on the imaging surface of the imaging device 5 via the imaging optical system 4 to form an image WM of the wafer mark Mlx.
To form Image WM of mark M1x in imaging device 5
Are converted into a two-dimensional digital signal sequence by the A / D converter 6. 8A is an integrating device, and as shown in FIG. 8B, the wafer mark image WM 'converted into a digital signal by the A / D converter 6 is shown.
, A moving average process in the Y direction shown in FIG. 8B is performed in the window, and the two-dimensional image signal is converted into a one-dimensional digital signal sequence S.
(X).

[0008] Reference numeral 8 in FIG. 8 denotes a position detecting device, which is a one-dimensional digital signal sequence S (x) output from the integrating device 7.
, A pattern match is performed using a template pattern stored in advance, and the address position of S (x) having the highest degree of matching with the template pattern is determined by the CPU.
9 is output. Since this output signal is a mark position based on the imaging surface of the imaging device 5, the CPU 9
The position a _x1 of the wafer mark Mlx with respect to the reticle R is obtained by calculation from the relative position of the image pickup device 5 and the reticle R obtained in advance by a method (not shown). As described above, the displacement amount in the x direction of the first measurement shot S1 is measured.

Next, the CPU 9 executes the first measurement shot S
The XY stage 11 is driven such that the y-direction measurement mark M1y falls within the field of view of the y-direction positioning optical system. Here, the displacement amount a _y1 in the y direction is measured in the same procedure as in the x direction measurement. This completes the measurement in S1.

Next, the CPU 9 executes the second measurement shot S
The XY stage 11 is moved to 2 and the amount of displacement in the x and y directions is measured in the same procedure as the first. Similarly, measurement is performed for a predetermined number of measurement shots n (n = 4 in FIG. 9), and the positional deviation measurement value a for each measurement shot is calculated.
_xi , a _yi (i = 1, 2,..., n) are stored.

The CPU 9 performs relative positioning of the wafer W with respect to the reticle R on the basis of the positional deviation amount in each measurement shot obtained in this manner as follows.

The CPU 9 determines the designed mark position d _i = [d _xi , d _yi ] ^T at each measurement shot by the actual mark position a _i = [a _xi , obtained by wafer mark measurement.
a _yi ] When trying to superimpose on ^T by correction conversion,
Correction position g including residual error e _i = [e _xi , e _yi ] ^T of correction
_i = [g _xi , g _yi ] ^T = [a _xi + _exi , _axi + _exi ]
The relationship between ^T and d _i

[0011]

(Equation 1) And the sum of squares of the correction residual e _i

[0012]

(Equation 2) Are calculated so that is minimized.
Next, the CPU 9 drives the XY stage based on the predetermined conversion parameters defined by A and S, and performs the step-and-repeat position such that the error between the measured mark position and the designed mark position is minimized. While doing the alignment
All the shots formed on the wafer are exposed. Where A and S are

[0013]

(Equation 3) Where α _x and α _y indicate the elongation of the wafer in the x and y directions, respectively, and θ _x and θ _y indicate the x-axis and y-axis rotation components of the shot array, respectively. S represents a parallel shift of the entire wafer. According to this method, the positional shift is not measured for all the exposure shots, and the alignment is performed using a limited number of sample shots. Therefore, there is an advantage that the throughput of the apparatus is improved.

However, in the actual semiconductor manufacturing process, the measurement error of the shot due to deformation of the measurement mark or the like varies from lot to lot. For this reason, when a sample shot fixed in advance is used, in the alignment of a process wafer having a large measurement error of the shot, the correction accuracy is reduced due to the shortage of the number of sample shots, and the position of the process wafer having a small measurement error of the lot is generated. In the matching, there is a disadvantage that the number of fixed sample shots is too large as compared with the number of sample shots for satisfying the required accuracy, thereby lowering the throughput.

[0015]

SUMMARY OF THE INVENTION An object of the present invention is to select a plurality of measurement objects from a plurality of alignment objects formed on a substrate to be processed and measure their positions. In an alignment method, an apparatus, and a device manufacturing method for performing alignment of an entire substrate, it is possible to perform high-accuracy alignment without lowering the throughput of the apparatus in accordance with the measurement accuracy of each measurement object on the substrate. is there.

[0016]

In order to solve this problem, an alignment method according to the present invention comprises a plurality of alignment objects (formed at each shot position) formed in advance on a plurality of substrates according to a predetermined arrangement. A first step of sequentially measuring the position of each alignment target formed on one substrate, and the measurement position and the relationship between the position on their design, the square of the overall error (residual e _i in the total measurement position based on the residual (e _i) for each measurement position when described by a predetermined transformation parameter sum)
A second step of determining the conversion parameters (B, Θ, S) such that is minimized, based on the determined conversion parameters and the residual corresponding thereto and according to a predetermined logic, A third step of selecting some of the object arrangement positions (positions in the shot arrangement lattice);
One of the alignment targets formed on another substrate at the selected arrangement position (sample shot)
And the relationship between these measured positions and their designed positions is described by a predetermined conversion parameter such that the conversion parameter (B ₂ , Θ ₂ , S ₂ ), and a sixth step of converting the design position of each alignment object according to the relationship based on the determined conversion parameters to determine the position of each alignment object. And a seventh step of moving the other substrate so that the determined positions of the respective alignment objects are sequentially located at the reference position.

Further, the device manufacturing method of the present invention is characterized in that an object to be aligned on a substrate is sequentially aligned by such a method, and the object is sequentially exposed.

Further, the alignment method of the present invention is an alignment apparatus for sequentially aligning a plurality of alignment objects formed in advance on a plurality of substrates in accordance with a predetermined arrangement to predetermined reference positions, respectively. First position measuring means (CPU 9, alignment optical system S, stage driving device 10, etc.) for sequentially measuring the position of each alignment target formed on one substrate; First, the conversion parameter is determined such that the overall error of all measurement positions based on the residual for each measurement position when the relationship with the design position is described by a predetermined conversion parameter is minimized. Parameter determining means (CPU 9), based on the determined conversion parameter and the corresponding residual, and in accordance with a predetermined logic, the number of the alignment positions of each alignment object. Selection means for selecting whether (CPU9)
And second position measuring means (CPU9, positioning optical system S, stage driving device) for sequentially measuring the positions of the positioning objects at the selected arrangement position among the positioning objects formed on another substrate. 10) and a second parameter determination means (2) for determining the relationship between these measurement positions and their design positions so as to minimize the error when the conversion parameters are described using predetermined conversion parameters. CP
U9) and a position determining means (CP) for converting the design position of each alignment object according to the relationship based on the determined conversion parameter to determine the position of each alignment object.
U9) and substrate moving means (CPU 9, stage driving device 10) for moving the other substrates so that the determined positions of the respective alignment objects are sequentially located at the reference position.
Etc.). Here, the description in parentheses indicates the corresponding element in the embodiment.

That is, according to the present invention, an accurate conversion parameter with the least error is obtained on the first substrate, and the position is measured to determine the conversion parameter on another substrate based on the conversion parameter and the residual. By selecting the alignment position (sample shot) of the alignment target to be performed, the selection of the alignment position is made the optimum position and the number thereof, whereby the conversion parameter is determined by the necessary and minimum position measurement on another substrate. In this way, accuracy and throughput can be achieved at the same time.

[0020]

DESCRIPTION OF THE PREFERRED EMBODIMENTS In a preferred embodiment of the present invention, the position of an object to be aligned can be measured by measuring the amount of deviation from its designed position.

Further, as the predetermined logic for selecting some of the arrangement positions of the alignment objects, the logic for preferentially selecting the arrangement position of the alignment objects at the measurement position where the residual is small. Etc. can be used. As the residuals, each residual is weighted by a ratio (R / r) of a distance r from a substrate center of a measurement position related to the residual to a predetermined radius R from the substrate center, For each of the residuals, a weight can be used in which the arrangement position is selected so that the arrangement position is not biased.

When determining a conversion parameter for another substrate, if the difference between the conversion parameter and the conversion parameter determined by the first substrate does not satisfy a predetermined condition, the residual or weighting is performed. Further, the array position of the alignment target at the measurement position where the residual is small is further added and selected, the conversion parameter is determined again, and the array position selected until the predetermined condition is satisfied or the selected array position becomes a predetermined number. Until then, this additional selection and the process of determining the conversion parameters again may be repeated. Hereinafter, embodiments of the present invention will be described more specifically through examples.

[0023]

FIG. 1 is a schematic view showing an exposure apparatus having a positioning apparatus according to a first embodiment of the present invention. In this figure, the functions of the positioning optical system S, the A / D converter 6, the integrating device 7, and the position detecting device 8 are the same as those of the conventional example, and therefore detailed description is omitted here. A storage device 12 is added to the configuration of the conventional example shown in FIG. FIGS. 4 and 5 are flowcharts showing an exposure procedure by this apparatus.

In this apparatus, when the first wafer W of the first lot is mounted on the XY stage 11 by a wafer transfer device (not shown), the CP
U9 indicates that the alignment mark Mlx formed on the first measurement shot S1 shown in FIG.
A command is sent to the stage driving device 10 to drive the XY stage 11 so that the XY stage 11 is located within the visual field range of the XY stage 11.
At this time, the luminous flux emitted from the alignment illuminating means 2 for irradiating the non-exposure light passes through the beam splitter 3, the reticle R, and the projection optical system 1, and the alignment mark M
lx is illuminated. The alignment mark Mlx is shown in FIG.
This is a grid mark as shown in FIG. Next, A / D
The conversion device 6, the integration device 7, and the position detection device 8 are provided with a reticle R and a mark Mlx in the same manner as described in the conventional example.
Is calculated relative to the position. Next, the CPU 9
The XY stage 11 is driven so that the alignment mark Mly in the y direction falls within the field of view of the alignment optical system S, and the relative displacement between the reticle R and the mark Mly is calculated in the same manner as Mlx. (Step S3, S
4).

Next, the CPU 9 moves the XY stage 11 so that the x-direction measurement mark M2x of the second measurement shot S2 falls within the field of view of the positioning optical system S, and thereafter, in the same manner as the measurement shot S1, FIG. 2 (a) on the wafer W
Each measurement shot S2 formed as shown in FIG.
S3... S32, the displacement in the x direction and y
The direction shift amount is measured (steps S3 to S5).

Next, the CPU 9 designs the mark positions d _i = [d of the marks M1x, M1y.
_[xi , d _yi ] ^T is to be superimposed on the actual mark position a _i = [a _xi , a _yi ] ^T obtained by the above-described wafer mark measurement by correction conversion, and the residual error e _i =
Corrected position g _i = [g _xi , including [e _xi , e _yi ] ^{T
_{g yi] T = [a xi}} + e xi, the relationship of a _xi + e _xi] ^T and d _i

[0027]

(Equation 4) [Mathematical formula-see original document] The conversion parameters B, Θ, S that minimize the sum of squares of the correction residual e _i are expressed as

[0028]

(Equation 5) Is calculated under the condition that V becomes the minimum (step S6). Here, i = 1, 2,..., 32, B, Θ,
S is

[0029]

(Equation 6) It is. Here, β _x and β _y are the x direction of the wafer and y
Elongation in the direction, θ _x and θ _y are the x-axis and y
This represents the rotation component of the shaft. S represents a parallel shift of the entire wafer. These conversion parameters represent a magnification component, a rotation component, and a parallel displacement component as error factors of the displacement of the pattern formed on the wafer W1 from the ideal position.

Next, the CPU 9 determines the conversion parameter β
_{x, β y, θ x,} θ y, s x, s y a reference to the correction amount _{βref x, βref y, θref x} , θref
_y , sref _x , sref _y, and shallow difference E = (e ₁ , e
_2, ..., e ₃₂₎ stores in the storage device 12 (step S6). This conversion parameter corresponds to a linear component of the shot array formed on the wafer W because the conversion equation (4) is a linear equation. In addition, since the correction amount is calculated by measuring all shots, the reference correction amount estimates the linear component of the shot array with the highest accuracy.

Next, the CPU 9 drives the XY stage 11 in a step-and-repeat manner in accordance with the grid obtained by converting the designed shot array grid with the obtained conversion parameters, and sequentially exposes each shot of the wafer W (step S7). When the exposure of the shot is completed, the wafer W is stored in a wafer storage carrier (not shown) by the wafer transfer device (step S9).

Next, the CPU 9 calculates a measured value A =
(A ₁ , a ₂ ,..., A ₃₂ ) and the reference correction amount β
_{ref x, βref y, θref x} , θref y, sr
ef _x , sref _y and the residual E = (e ₁ , e ₂ ,..., e
₃₂ ), a sample shot is selected as follows (step S8). That is, as shown in FIG. 5, first, four shots are selected in order from the shot with the smallest residual | e _i | (steps S81 and S82). A conversion parameter is calculated from the measured values of the four shots (step 84). Β _xs , β _ys , θ _xs
, Θ _ys , s _xs , s _ys , βref _x , β
ref _y , θref _x , θref _y , sref _x , sr
The absolute value of the difference from ef _y is a predetermined value Δβ _x ,
Compare with Δβ _y , Δθ _x , Δθ _y , Δs _x , Δs _y (steps S85, S86), and

[0033]

(Equation 7) Holds, the addition of the sample shots is stopped, and the four shots are stored in the storage device 12 as sample shots (steps S83 to S87). If Expression (7) does not hold, the shots with the smallest error are added to the sample shots one by one in ascending order of the error (step S88), and the conversion parameter is calculated from the measured value of the sample shot each time it is added. (Step S84), and whether the above equation (7) holds (step S85, S
86) or the number of sample shots is a predetermined maximum value S
Until the value reaches _max (step S83), the addition of shots and the calculation of conversion parameters are repeated. Thereafter, the final number and position of the sample shots are stored in the storage device 12 (step S87). For example, when selecting a sample shot from a wafer having an error as shown in FIG. 2B, shots having small residuals are sequentially selected, and the shots shown in FIGS. 3A, 3B and 3C are selected. ) Correction parameters β _xs , θ
_{In order for xs} and _Sxs to fall within a predetermined range, as shown in those figures, 7 shots S shown in FIG.
2, S7... S27 are required. With such a selection algorithm, the correction parameters can be obtained with almost the same accuracy as when the correction parameters are obtained by measuring all shots. Although only the X direction has been described here for simplicity, the same applies to the Y direction. In addition, predetermined values Δβ _x , Δβ _y , Δ
By setting θ _x , Δθ _y , ΔS _x , and ΔS _y appropriately in accordance with the accuracy required for the wafer to be aligned, desired accuracy is achieved while maintaining high throughput with the minimum number of shots required. You can do it.

Next, the CPU 9 places the wafer W to be processed next by the wafer transfer device on the XY stage 11 (steps S1, S2). The CPU 9 reads the sample shot position obtained from the first wafer from the storage device 12, sequentially measures the alignment marks of the sample shots in the same manner as described above, and shifts the x direction in each shot. And the deviation amount in the y direction a _2i = [a _2xi , a
_2yi ] ^T is obtained (steps S10 to S12). next,
The CPU 9 steps and repeats the XY stage 11 according to the shot arrangement calculated by obtaining the conversion parameters B ₂ , Θ ₂ , and S ₂ in the same manner as in the case of the first wafer W, and exposes all the shots ( Steps S13 to S1
4).

Measurement, step & repeat, and exposure are performed on the third and subsequent wafers in the same procedure as on the second wafer W until the processing on all wafers in the same lot is completed (steps S1, S2, S10 to S16). C
The PU 9 stores the number of wafers of one lot in advance, and when the wafer lot changes, the mark positions of all the shots are measured for the first wafer and converted as in the case of the first lot. Calculation and storage of parameters and residuals are performed, and the same procedure as that for the second wafer is repeated for the remaining wafers of the same lot.

If there is no difference in the tendency of the shot measurement error between lots, the sample shot stored in the first lot can be recalled and used when measuring the next lot. The measurement of all shots for the first image can be omitted, and the throughput is improved.

[0037]

[Other Embodiments] In the above-described embodiment, the errors in the measured values of the shots formed on the first wafer W of the lot are arranged in ascending order, and sample shots are sequentially selected (step S).
82, S88) is, instead of using the error itself, as shown in step S82 ', S88' of FIG. 6, the weighting from the distance r _i and the wafer center from the wafer center of the candidate shots a ratio of a distance R Error amount

[0038]

(Equation 8) May be used for selecting a sample shot.
At this time, when the measurement accuracy of the sample shot is deteriorated in the outer peripheral portion of the wafer, there is an effect of excluding the outer peripheral shot. Also, when correcting a magnification and rotation using a shot of the wafer central portion, but deterioration of the correction accuracy as r _i is smaller, the correction to the exclusion of shots of the central portion by weighted by R / r _i It also has the effect of preventing accuracy degradation.

An evaluation value representing the degree of shot variation may be employed as a weight for the error. In other words, since the measurement positions on the wafer are generally required to be evenly distributed over the entire surface of the wafer for calculation accuracy, when a new sample shot is selected, the shot that is farthest from the previously selected sample shot is determined. The choice is given priority. Specifically, as shown in steps S91 to S94 in FIG.
The already selected shot S _i , (coordinates (d _i =
The distance | d _i −d _k | between [d _xi , d _yi ] ^T ) and a candidate shot S _k other than the sample shot, (coordinates (d _k = [d _xk , d _yk ] ^T )) is S _k and all Calculated between sample shots, distance MIN from closest sample shot
(| D _i −d _k |) and the residual of the candidate shot S _k

[0040]

(Equation 9) _Is the error amount e _wk of S _k . Then, e _wk is obtained for all the candidate shots, and the shot with the smallest | e _wk | is selected as the sample shot. By doing so, it is possible to arrange sample shots evenly in a lot in which an error is locally reduced in a part of the wafer, without deteriorating the magnification and rotation correction accuracy. High-precision positioning can be performed.

Next, a description will be given of an example of manufacturing a device that can use such an exposure apparatus. FIG. 10 shows a micro device (a semiconductor chip such as an IC or an LSI, a liquid crystal panel,
2 shows a flow of manufacturing a CD, a thin-film magnetic head, a micromachine, and the like. In step 31 (circuit design), the circuit of the semiconductor device is designed. Step 32 (mask production)
Then, a mask on which the designed circuit pattern is formed is manufactured. On the other hand, in step 33 (wafer manufacture), a wafer is manufactured using a material such as silicon. Step 34 (wafer process) is referred to as a preprocess, and an actual circuit is formed on the wafer by lithography using the prepared mask and wafer. Next step 35 (assembly)
Is a post-process, which is a process of forming a semiconductor chip using the wafer produced in step 34, and includes processes such as an assembly process (dicing and bonding) and a packaging process (chip encapsulation). Step 36
In (inspection), inspections such as an operation confirmation test and a durability test of the semiconductor device manufactured in step 35 are performed.
Through these steps, a semiconductor device is completed and shipped (step 37).

FIG. 11 shows a detailed flow of the wafer process. Step 41 (oxidation) oxidizes the wafer's surface. In step 42 (CVD), an insulating film is formed on the wafer surface. In step 43 (electrode formation), electrodes are formed on the wafer by vapor deposition. In step 44 (ion implantation), ions are implanted into the wafer. Step 4
In 5 (resist processing), a photosensitive agent is applied to the wafer. Step 46 (exposure) uses the above-described exposure apparatus to print and expose the circuit pattern of the mask onto the wafer. In step 47 (developing), the exposed wafer is developed. In step 48 (etching), portions other than the developed resist image are removed. In step 49 (resist removal),
After the etching, the unnecessary resist is removed.
By repeating these steps, multiple circuit patterns are formed on the wafer.

By using the manufacturing method of this embodiment, it is possible to manufacture a highly integrated semiconductor device, which has been conventionally difficult to manufacture, at low cost.

[0044]

As described above, according to the present invention, 1
Based on the conversion parameters and the residual, obtain the accurate conversion parameter with the least error on the first substrate, and based on the conversion parameters, determine the arrangement position of the alignment target whose position is to be measured to determine the conversion parameter on another substrate (Sample shot)
By selecting, the arrangement position can be selected at an optimum position and number. And according to this choice,
The conversion parameters can be determined by necessary and minimum position measurement on another substrate, thereby achieving both accuracy and throughput.

[Brief description of the drawings]

FIG. 1 is a schematic view of a main part of a first embodiment according to the present invention.

FIG. 2 is a view showing a shot position of a wafer in the apparatus of FIG. 1;

FIG. 3 is a diagram illustrating a state in which a sample shot is selected based on a conversion parameter in the apparatus of FIG. 1;

FIG. 4 is an overall flowchart showing the operation of the apparatus of FIG. 1;

FIG. 5 is a flowchart of shot selection in FIG. 4;

FIG. 6 is a flowchart of shot selection according to the second embodiment of the present invention.

FIG. 7 is a flowchart of shot selection according to a third embodiment of the present invention.

FIG. 8 is a schematic view of a main part of a conventional example.

FIG. 9 is a diagram showing sample shot positions in a conventional example.

10 is a flowchart showing a flow of manufacturing a micro device that can be manufactured by the apparatus of FIG.

FIG. 11 is a flowchart showing a detailed flow of a wafer process in FIG. 10;

[Explanation of symbols]

1: Projection optical system, 2: Positioning illumination device, 3: Beam splitter, 4: Image forming optical system, 5: Imaging device, 6: A /
D conversion device, 7: integration device, 8: position detection device, 9: C
PU, 10: Stage drive, 11: XY stage,
12: Storage device, S1, S2...: Shot, M1
y, M1x, M2y, M2x...: alignment marks (wafer marks), W: wafer.

Claims (8)

[Claims] An alignment method for sequentially aligning a plurality of alignment objects formed in advance on a plurality of substrates in accordance with a predetermined arrangement to predetermined reference positions, wherein the alignment objects are formed on one substrate. A first step of sequentially measuring the positions of the respective alignment objects, and the relationship between the measured positions and their designed positions is represented by a residual for each measured position when described by a predetermined conversion parameter. A second step of determining the conversion parameter such that the overall error of all the measurement positions based on the position is minimized; and determining each position based on the determined conversion parameter and the residual corresponding thereto and according to a predetermined logic. A third step of selecting some of the alignment positions of the alignment objects, and sequentially determining the positions of the alignment objects at the selected alignment position among the alignment objects formed on other substrates. A fourth step of measuring, the relationship between the position on these measurement positions and their design,
A fifth step of determining the conversion parameter so as to minimize an error when described by a predetermined conversion parameter; and converting a design position of each alignment target object in accordance with the relationship based on the determined conversion parameter. And a seventh step of moving the other substrate so that the determined positions of the respective alignment objects are sequentially located at the reference position. A positioning method. 2. The alignment method according to claim 1, wherein the position of the object to be aligned is measured by measuring an amount of deviation from a designed position. 3. The logic according to claim 1, wherein the predetermined logic in the third step is a logic for preferentially selecting an arrangement position of an alignment target at a measurement position where the residual is small.
Or the alignment method according to 2. 4. In the third step, for each residual, a ratio (R / r) of a distance r from a substrate center of a measurement position related to the residual to a predetermined radius R from the substrate center. The alignment method according to any one of claims 1 to 3, wherein weighting is performed. 5. The method according to claim 1, wherein in the third step, weighting is performed on each of the residuals so that the arrangement position is selected so as not to be biased in position. Or the alignment method according to item 1. 6. When the difference between the conversion parameter determined in the second step and the conversion parameter determined in the fifth step does not satisfy a predetermined condition, the residual or the weighted residual is small. The arrangement position of the alignment object at the measurement position is further added and selected, and the fifth step is performed again, and the addition is performed until the predetermined condition is satisfied or the selected arrangement position reaches a predetermined number. Choice and Fifth
The alignment method according to any one of claims 1 to 5, wherein the steps are repeated. 7. The method according to claim 1, wherein
A device manufacturing method, comprising sequentially aligning an object to be aligned on a substrate and sequentially exposing the object. 8. An alignment apparatus for sequentially aligning a plurality of alignment objects formed in advance on each of a plurality of substrates in accordance with a predetermined arrangement to predetermined reference positions, the alignment apparatus being formed on a single substrate. A first position measuring means for sequentially measuring the position of each alignment target, and a relationship between the measured positions and their designed positions, which are described by predetermined conversion parameters. First parameter determining means for determining the conversion parameter such that the overall error of all measurement positions based on the residual is minimized, and a predetermined parameter based on the determined conversion parameter and the residual corresponding thereto. According to the logic of
Selecting means for selecting some of the alignment positions of the alignment objects; and sequentially measuring the positions of the alignment objects at the selected alignment position among the alignment objects formed on another substrate. The second position measuring means, and the relationship between these measured positions and their designed positions,
A second parameter determining means for determining the conversion parameter so as to minimize an error when described by a predetermined conversion parameter; and a design position of each alignment object according to the relationship based on the determined conversion parameter. Position determining means for converting the position of each of the alignment objects by converting the position of each of the alignment objects, and the substrate moving means for moving the other substrates so that the determined positions of the respective alignment objects are sequentially located at the reference position. And a positioning device.