JPH11168244A - Uranium semiconductor element, its device, and generation facility - Google Patents

Abstract

PROBLEM TO BE SOLVED: To use, for example, a radioactive waste as a heat source, by adding a pentavalent impurity such as antimony, bismuth, and phosphor to metal uranium for forming it in (n) type. SOLUTION: A semiconductor device 1A is constituted by joining or bringing a pair of upper and lower, flat-plate or film y electrodes 3a and 3b to or into contact with a flat-plate or film y uranium semiconductor element 2A that is formed on an n-type semiconductor by adding a pentavalent impurity such as antimony, bismuth, or phosphor to metal uranium and joining or bringing a pair of upper and lower pyrogenic conduction electric insulators 4a and 4b to or into contact with the electrodes 3a and 3b. Then, for example, when heat is inputted from the outer surface of the insulator 4a, the heat is inputted to the element 2A via the insulator 4a. The heat input is performed efficiently and at the same time the temperature of the upper surface side of the element 2A increases while that of the lower surface side decreases, thus generating a temperature difference. As a result, electricity is generated in the element 2A and is outputted from electric wires 6a and 6b of the electrodes 3a and 3b toward outside.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a uranium-based semiconductor element comprising uranium metal, uranium oxide, or a uranium compound, a device thereof, and a power generation facility.

[0002]

2. Description of the Related Art In general, some semiconductors have a property that electricity is generated when a temperature difference occurs between both ends thereof. One of means for converting heat into electricity by utilizing this property is known. It is possible to use this kind of semiconductor.

[0003]

Generally, nuclear power plants generate a lot of spent radioactive materials such as spent fuels, and these spent radioactive materials emit radiation such as gamma rays simultaneously with heat. Therefore, when applying the above-mentioned conversion from heat to electricity by a semiconductor to a nuclear power generation facility, it is necessary to manage while shielding this gamma ray, and it is suitable to use radioactive waste as a heat source. It is necessary to develop a special semiconductor element or its device.

That is, in a precision electronic control semiconductor device, for example, when irradiated with alpha rays from uranium, the material of the semiconductor is changed, which is not appropriate. However, heat transfer for converting heat to electricity is not suitable. In the field of semiconductors, uranium can be used because it is not precision control of electrons.

The present invention has been made in view of such circumstances, and an object of the present invention is to provide a uranium-based semiconductor element for thermoelectric conversion capable of using radioactive waste or the like as a heat source, a device thereof, and a power generation facility. To provide.

[0006]

According to a first aspect of the present invention, there is provided a uranium-based semiconductor device formed of n-type by adding a pentavalent impurity such as antimony, bismuth, or phosphorus to metallic uranium. And

A uranium-based semiconductor device according to a second aspect of the present invention is characterized in that it is formed of p-type by adding trivalent impurities such as thallium, indium or aluminum to uranium metal.

A uranium-based semiconductor device according to a third aspect of the present invention is characterized in that a uranium compound such as uranium sulfide, uranium nitride or uranium silicide is added with a pentavalent or trivalent metal or an impurity of the compound. Features.

According to the first to third aspects of the present invention, the metal uranium or the uranium compound is formed in the n-type semiconductor element which receives the supply of extra electrons from the pentavalent impurity, or the uranium metal or the uranium compound is converted from the trivalent impurity. Although formed in a p-type semiconductor element to which holes are supplied, since the amount of electrons or holes contributing to electric conduction is large, the conversion efficiency from heat to electricity is high.

[0010] In addition, since uranium metal or a uranium compound has a very large mass, it is characterized in that it has a high ability to shield gamma rays. For this reason, if metal uranium or a uranium compound is used, power can be obtained from the uranium-based semiconductor element without separately providing a gamma ray shielding material.

A uranium-based semiconductor device according to a fourth aspect of the present invention is characterized in that the uranium metal according to the first or second aspect or the uranium compound according to the third aspect is enriched uranium.

A uranium-based semiconductor device according to a fifth aspect of the present invention is characterized in that the metal uranium according to the first or second aspect or the uranium compound according to the third aspect is obtained by mixing plutonium.

According to the fourth and fifth aspects of the present invention, since the metal uranium or the uranium compound is enriched uranium or contains a mixed or mixed crystal of plutonium, the uranium-based semiconductor element itself is used as a heating element. Can be.
For this reason, since a large temperature difference can be provided in the semiconductor element itself, the conversion efficiency from heat to electricity can be improved.

A uranium-based semiconductor device according to a sixth aspect of the present invention is an n-type semiconductor obtained by adding a pentavalent impurity such as antimony, bismuth or phosphorus to an amorphous material obtained by hydrogenating, fluorinating or oxygenating metal uranium. It is characterized by being formed.

A uranium-based semiconductor device according to a seventh aspect of the present invention is a p-type uranium element obtained by adding a trivalent impurity such as thallium, indium or aluminum to an amorphous substance obtained by hydrogenating, fluorinating or oxygenating metallic uranium. It is characterized by being formed.

According to the sixth and seventh aspects of the present invention, the amorphous, which is obtained by hydrogenating, fluorinating or oxygenating metallic uranium, can easily take in trivalent or pentavalent impurities. Can be easily controlled to an optimal amount, and an optimal semiconductor element can be manufactured.

According to an eighth aspect of the present invention, there is provided a uranium-based semiconductor device, wherein the metal uranium according to the first, second, fourth, fifth, sixth and seventh aspects is replaced with uranium oxide.

According to the eighth aspect of the present invention, uranium oxide has a low thermal conductivity, so that a large temperature difference can be obtained, and therefore, the conversion efficiency from heat to electricity is high. However, uranium oxide has low electrical conductivity, and therefore has low efficiency in converting heat to electricity. Therefore, by contriving to increase the electrical conductivity of the uranium oxide semiconductor device, the conversion efficiency from heat to electricity can be increased.

When the tetravalent uranium of the uranium oxide is replaced by a pentavalent metal, one extra electron is added, and this electron enhances electric conduction. As a result, the conversion efficiency from heat to electricity is improved.

When the tetravalent uranium of the uranium oxide is replaced by a trivalent metal, one electron is deficient, which becomes a hole and has the same action as a positively charged particle. Conduction increases. As a result, the conversion efficiency from heat to electricity is improved.

In the case of a semiconductor element in which an impurity is added to an amorphous substance obtained by hydrogenating or fluorinating uranium oxide, the amorphous element obtained by hydrogenating or fluorinating uranium oxide can easily incorporate impurities for forming a semiconductor element. Therefore, the amount of impurity addition can be easily controlled to an optimum amount. As a result, the conversion efficiency from heat to electricity can be improved.

Further, the surface of the particles of the uranium oxide semiconductor element or the amorphous semiconductor element obtained by hydrogenating or fluorinating uranium oxide is coated with a film of a material having a high melting point and high electric conductivity such as graphite, tungsten, and renewal oxide, In the case of a uranium-based semiconductor obtained by mixing a plurality of types having different particle diameters and integrally forming the same by pressure molding or the like, electricity generated by the uranium oxide semiconductor element has a high melting point and a high melting point such as graphite, tungsten, and renewal oxide. It can easily pass through a coating film of an electrically conductive substance. In addition, electricity generated on the high temperature side can easily reach the low-temperature end electrode through the coating film of a material having high electrical conductivity. For this reason, electricity can be easily taken out from the electrode to the outside.

Further, in this uranium oxide semiconductor device, by mixing a plurality of types having different particle diameters, the packing density of these particles can be increased, so that the amount of generated electric power can be increased, and at the same time, the amount of generated gamma rays can be increased. The shielding effect can be improved. Further, since the semiconductor particles are formed by integral molding such as compression molding, the semiconductor element can be mass-produced at low cost.

Further, uranium oxide has a low thermal conductivity, can obtain a large temperature difference, and can improve the conversion efficiency from heat to electricity.

According to a ninth aspect of the present invention, there is provided a uranium-based semiconductor device comprising a plurality of uranium-based semiconductor elements having a higher oxygen content than uranium dioxide.
The surface of the particles of the uranium oxide semiconductor of 01 to 2.1 is formed by the method of 2.
001 to 2.1 are characterized by being coated with a film of a substance having higher electric conductivity and lower heat conductivity than that of the uranium oxide semiconductor, and integrally forming a plurality of kinds of coated particles having different particle diameters.

According to the ninth aspect of the present invention, this semiconductor device is constituted by a p-type oxygen-excess uranium dioxide semiconductor having a higher proportion of oxygen than uranium dioxide, and has almost no metal impurities. Good performance and can be used in high temperature environment.

The electricity generated on the high-temperature side of the semiconductor element easily passes through a coating film of a material having a high melting point, high density and high electrical conductivity, such as tungsten or renewal oxide, and the electricity generated on the high-temperature side is The low-temperature side electrode can be easily reached through the coating film of the high electrical conductivity material. For this reason, electricity can be easily taken out from the electrode to the outside.

Further, since the semiconductor element can have a high packing density by mixing a plurality of kinds having different particle diameters, it is possible to increase the amount of generated power and at the same time to improve the gamma ray shielding effect. When the semiconductor element is formed by integral molding such as compression molding, mass production can be performed at low cost. As a result of these,
The conversion efficiency from heat to electricity can be improved at low cost.

A uranium-based semiconductor device according to a tenth aspect of the present invention provides a uranium-based semiconductor device in which the surface of a plurality of particles of 1.999 to 1.9 uranium oxide semiconductors having a lower proportion of oxygen than uranium dioxide is reduced to 1.999 to 1.9. It is characterized by being coated with a film of a substance having higher electric conductivity and lower thermal conductivity than a uranium oxide semiconductor, and integrally forming a plurality of kinds of coated particles having different particle diameters.

According to the tenth aspect of the present invention, in this semiconductor device, the ratio of oxygen to uranium is from 1.999 to 1.9.
0 n-type oxygen-deficient uranium oxide semiconductor,
Since there is almost no metal impurity, the same high-temperature stability and good use in a high-temperature environment can be obtained, and almost the same functions and effects as the semiconductor device of the ninth aspect can be obtained.

The uranium-based semiconductor device according to the eleventh aspect of the present invention has a weight ratio of silicon, iron, and uranium of 1: 0.99-0.
It is characterized by adding a pentavalent or trivalent metal impurity to an oxygenated amorphous semiconductor having a ratio of 992 to 0.1 to 0.008.

According to the eleventh aspect of the present invention, the ratio of silicon to iron and manganese is 1: 0.99 to 0.992: 0.1 to 0.99.
A p-type or n-type impurity semiconductor obtained by adding an impurity of a pentavalent or trivalent metal to an oxygenated amorphous semiconductor of 0.008 has a very high conversion efficiency from heat to electricity.

Further, since the uranium atom radius is larger than the manganese atom radius, electrons outside the uranium atom can exist in a wider range than electrons outside the manganese atom. This increases the electrical conductivity. If the electric conductivity increases, electrons or holes generated on the high temperature side can quickly reach the electrode on the low temperature side, so that the conversion efficiency from heat to electricity increases.

According to a twelfth aspect of the present invention, there is provided a uranium-based semiconductor device according to any one of the first to eleventh aspects, wherein the surface of the particles of the plurality of uranium-based semiconductor devices is formed of a material having high electrical conductivity and low thermal conductivity. And a plurality of types of coated particles having different particle diameters are integrally formed.

According to the twelfth aspect of the present invention, the application of heat or heat to the uranium-based semiconductor element is hindered by a substance having high electrical conductivity and low thermal conductivity, so that a large temperature difference occurs. As a result, electricity is generated in the semiconductor element itself, and the electricity easily conducts a substance having high electrical conductivity and low thermal conductivity such as an oxide renewal, so that the electricity can be extracted with high efficiency and ease.

Further, since the uranium-based semiconductor element is formed by mixing a plurality of types having different particle diameters, the packing density of these particles can be increased. For this reason, it is possible to increase the amount of power generated by the semiconductor element and at the same time to improve the gamma ray shielding effect.

Further, since the semiconductor element can be formed by integral molding such as compression molding of the semiconductor element, the molding can be easily mass-produced and the production cost can be reduced.

A uranium-based semiconductor device according to a thirteenth aspect of the present invention is obtained by dispersing and mixing the uranium-based semiconductor device according to any one of the first to eleventh aspects in a substance having high electrical conductivity and low thermal conductivity. It is characterized by the following.

According to the thirteenth aspect of the present invention, the application of heat or heat to the uranium-based semiconductor element is hindered from being conducted by a substance having high electrical conductivity and low thermal conductivity, so that a large temperature difference occurs. As a result, electricity is generated in the semiconductor element itself, but the electricity easily conducts a substance having high electrical conductivity and low thermal conductivity such as an oxide renewal, so that the electricity can be extracted with high efficiency and ease.

A uranium-based semiconductor device according to a fourteenth aspect of the present invention is a semiconductor device formed by dispersing and mixing a high-conductivity, low-conductivity non-fission material with a high-conductivity, low-thermal-conductivity material. Is added as an impurity.

According to the fourteenth aspect of the present invention, since the atomic radius of uranium added as an impurity is larger than the atomic radius of the lighter atom, the electrons outside the uranium atom are larger than the electrons outside the lighter atom. Can also be present in a wide range. For this reason, the electric conductivity increases. If the electron conductivity increases, electrons or holes generated on the high-temperature side can quickly reach the electrode on the low-temperature side, so that the conversion efficiency from heat to electricity increases.

According to a fifteenth aspect of the present invention, there is provided a uranium-based semiconductor device according to any one of the first to fourteenth aspects, and a pair of electrodes on one surface and the other surface of the uranium-based semiconductor device. And a low thermal conductive electrical insulator that covers an end surface of the uranium-based semiconductor element, the electrode, and the high thermal conductive electrical insulator that are orthogonal to the laminating direction. It is characterized by.

According to the semiconductor device of the fifteenth aspect, since heat is applied to the uranium-based semiconductor element through the high heat conductive electric insulating layer and the electrode, the input thermal efficiency can be improved. When the semiconductor element is irradiated with gamma rays from radioactive waste, the gamma rays collide with uranium and are converted into heat.
When the heat generation and the heat give rise to a temperature difference between one surface and the other surface of the semiconductor element, electricity is generated in the semiconductor element.

According to a sixteenth aspect of the present invention, there is provided a semiconductor device comprising: a plurality of uranium-based semiconductor elements according to any one of the first to fourteenth aspects; and a plurality of electrodes alternately stacked with the uranium-based semiconductor elements. A low thermal conductive electrical insulator covering an end face orthogonal to the laminating direction of the uranium-based semiconductor element and the electrode, and both end faces of these low thermal conductive electrical insulators and outer faces of a pair of electrodes located on both end face sides. And a high heat conductive electrical insulator joined or contacted.

According to the sixteenth aspect of the invention, in addition to the functions and effects of the fourteenth aspect, since there are a plurality of uranium-based semiconductor elements, the amount of heat and the amount of electricity can be increased accordingly.

According to a seventeenth aspect of the present invention, there is provided a semiconductor device according to any one of the first to fourteenth aspects, wherein the uranium-based semiconductor element or the powder compact of an amorphous semiconductor thereof is compacted with a powder having a high melting point and high electric conductivity. The other end surface of the electrode other than the wire lead-out portion is contacted with a high thermal conductive electrical insulator made of a powder compact of a substance having high electrical insulation and good thermal conductivity.
These voids are filled with an electrically insulating powder of silicon oxide or alumina, and these are integrally formed by compression molding or thereafter sintered and annealed.

According to the seventeenth aspect of the present invention, the uranium-based semiconductor element, the electrode,
Since the low and high heat conductive electric insulators are formed of powder compacts and are integrally formed by compression molding, or thereafter, are sintered and annealed to be integrally formed, mass production can be performed at low cost.

In general, when different materials are brought into contact with each other, the electrical resistance increases and the electrical conductivity decreases, the thermal conductivity from the heat source to the electrode and from the electrode to the semiconductor decreases, and the electric and thermal However, according to the present invention, the semiconductor elements are integrally formed by filling the gaps between the constituent members with an electrically insulating powder such as alumina and performing sintering annealing. The contact between the members becomes denser, and the above-mentioned disadvantages can be reduced.

A semiconductor device according to an eighteenth aspect of the present invention provides a plurality of uranium-based semiconductor elements according to any one of the first to fourteenth aspects, and a plurality of low heat conduction layers alternately stacked with the uranium-based semiconductor elements. A high electrical conductor, a high thermal conductive electrical insulator laminated through a pair of electrodes on the outer surfaces of a pair of uranium-based semiconductor elements located at both ends in the stacking direction of the low thermal conductive high-electrical conductor and the uranium-based semiconductor element, ,
It is characterized by comprising a low thermal conductive electrical insulator covering an end face orthogonal to the laminating direction of the high thermal conductive electrical insulator, the uranium-based semiconductor element, and the low thermal conductive high electrical conductor.

According to the eighteenth aspect of the present invention, when the base material of the uranium-based semiconductor element is metallic uranium, the metallic uranium has good thermal conductivity, so that it is difficult for a large temperature difference to occur with metallic uranium alone. Since a low thermal conductive and high electrical conductor is interposed between the semiconductor elements, a temperature difference occurs between the inclusions. Therefore, a temperature difference occurs even in a metal uranium semiconductor having good thermal conductivity, and the heat-to-electricity conversion efficiency is improved.

On the other hand, when the base material of the uranium-based semiconductor element is uranium oxide, this uranium oxide has poor electric conductivity, but the electricity generated here is a substance which easily conducts electricity interposed between the semiconductor elements. To the electrode through a low thermal and high electrical conductor. Therefore, since the electric conduction is improved, the conversion efficiency from heat to electricity is improved.

According to a nineteenth aspect of the present invention, there is provided a semiconductor device according to any one of the first to fourteenth aspects, and a plurality of low thermal conductive layers alternately stacked with the uranium-based semiconductor elements. A high electrical conductor, a high thermal conductive electrical insulator laminated on the outer surfaces of a pair of uranium-based semiconductor elements located at both ends in the stacking direction of the low thermal conductive high electrical conductor and the uranium-based semiconductor element, and a uranium-based semiconductor element An electrode joined to one end surface of the electrode and the low heat conductive high electric conductor orthogonal to the laminating direction, the outer surface of the electrode and one end surface of a pair of the high heat conductive electric insulator, and the high heat conductive electric insulator and the uranium-based semiconductor A low thermal conductive electrical insulator covering each one end surface of the element and the low thermal conductive high electrical conductor perpendicular to the laminating direction.

According to the nineteenth aspect, claim 1 is
In addition to the effects of the invention of FIG. 8, only one electrode is required,
Cost can be reduced.

According to a twentieth aspect of the present invention, a uranium-based semiconductor element or an amorphous semiconductor thereof, a low thermal conductive electrical insulator, a low thermal conductive high electrical conductor, and a high thermal conductive electrical insulator are each formed by a compacted powder compact. In addition, these compacted powder compacts are sintered and annealed to be integrally molded.

According to the twentieth aspect of the present invention, since the semiconductor device is formed by integrally forming the constituent members formed of the compressed powder compact, the semiconductor device can be mass-produced at low cost.

In general, when different substances are brought into contact with each other, the electric resistance increases and the electric conduction deteriorates.
The heat conduction from the heat source to the electrode, the heat conduction from the electrode to the semiconductor deteriorates, and electricity or heat leaks from the gap, which has the disadvantage of deteriorating the performance. However, according to the present invention, the gap between the constituent members is made of alumina or the like. By integrally molding the semiconductor element by filling it with the electric insulating powder and subjecting it to sintering and annealing, the contact between the members becomes denser and the above-mentioned disadvantages can be reduced.

A semiconductor device according to a twenty-first aspect of the present invention is characterized in that the low thermal conductive high electrical conductor is replaced with a low thermal conductive low electrical conductor.

According to the twenty-first aspect of the present invention, since a material having low thermal conductivity and low electrical conductivity is interposed between a plurality of uranium-based semiconductor elements, the base material of the semiconductor element has thermal conductivity and electrical conductivity. Even with metallic uranium having a good temperature, a temperature difference is generated between these semiconductor elements to generate electricity.

The generated electricity is directly conducted to the electrodes without passing through the above-mentioned inclusion having low electric conductivity. As a result, the electric conductivity is improved, so that the thermoelectric conversion efficiency can be improved. In addition, since the quality of the electrical conductivity of these inclusions does not matter, a low heat conductive material can be widely used.

A semiconductor device according to a twenty-second aspect of the present invention is characterized in that the high thermal conductive electrical insulator is made of beryllia.

According to the twenty-second aspect of the invention, beryllia can be used as a high thermal conductive electrical insulator.

A semiconductor device according to a twenty-third aspect of the present invention is characterized in that the low thermal conductive electrical insulator is made of alumina.

According to the twenty-third aspect of the present invention, alumina can be used as the low thermal conductive electrical insulator.

A semiconductor device according to a twenty-fourth aspect of the present invention is characterized in that the low thermal conductive high electrical insulator is made of tungsten or renewable oxide.

According to the twenty-fourth aspect of the present invention, tungsten or oxidized renewable material can be used as the low heat conductive high electric conductor.

A semiconductor device according to a twenty-fifth aspect of the present invention is characterized in that a conductive wire is electrically connected to the electrode.

According to the twenty-fifth aspect of the present invention, electricity generated in the uranium-based semiconductor element can be easily taken out to the outside by the conductor of the electrode.

According to a twenty-sixth aspect of the present invention, there is provided a power generation facility, comprising: the semiconductor device according to any one of the fifteenth to twenty-fifth aspects; a radioactive waste as a heat source of the semiconductor device;
It is characterized by having.

According to the power generation equipment of the twenty-sixth aspect, the uranium-based semiconductor element of the semiconductor device receives heat from radioactive waste and is irradiated with gamma rays. Then, gamma rays collide with uranium of the uranium-based semiconductor element and are converted into heat, and the uranium-based semiconductor element generates heat, generates a temperature difference, and generates electricity. This electricity is extracted to the outside via the conductor of the electrode. That is, the radioactive waste can be effectively used for power generation.

The high / low thermal conductivity and the high / low electrical conductivity are based on the thermal conductivity and electrical conductivity of uranium or uranium oxide.

[0071]

BRIEF DESCRIPTION OF THE DRAWINGS FIG.
This will be described with reference to FIG. In these figures, the same or corresponding parts are denoted by the same reference characters.

FIG. 1 is a longitudinal sectional view of a semiconductor device 1A according to the first embodiment of the present invention. This semiconductor device 1A has a flat or film-shaped uranium-based semiconductor element 2A formed by adding a pentavalent impurity such as antimony, bismuth or phosphorus to metallic uranium to form an n-type semiconductor. Or a pair of upper and lower electrodes 3a and 3b in the form of a film are joined or brought into contact with each other.
A pair of upper and lower high heat conductive electrical insulators 4a and 4b such as beryllia or the like are joined or brought into contact with the upper and lower surfaces in FIGS.

Then, these uranium-based semiconductor elements 2A,
A pair of flat or film-like low heat conductive insulators 5 made of alumina or the like are provided on the left and right end surfaces and the front and rear end surfaces of the pair of electrodes 3a, 3b and the pair of high heat conductive electric insulators 4a, 4b.
a and 5b are respectively joined to cover them.
Also, a pair of electric wires 6a, 6b are connected to the pair of electrodes 3a, 3b.
And the ends of the electric wires 6a, 6b are extended outside through the high thermal conductive insulators 4a, 4b.

Therefore, one of the pair of high thermal conductive electrical insulators 4a and 4b of this semiconductor device 1A, for example, 4a
When heat is input from the outer surface of the uranium-based semiconductor element 2A via the upper high thermal conductive electrical insulator 4a, the heat is input from the upper surface in the drawing. The heat input is performed with high efficiency because the high thermal conductive electric insulator 4a has high thermal conductivity, and the upper surface side of the uranium-based semiconductor element 2A has a high temperature, while the lower surface side has a low temperature, resulting in a temperature difference. . For this reason, electricity is generated in the uranium-based semiconductor element 2A and the electrode 3
a and 3b are output to the outside from the electric wires 6a and 6b. The uranium-based semiconductor element 2A, a pair of electrodes 3a,
3b, the end faces of the pair of high thermal conductive electrical insulators 4a, 4b are covered with the pair of low thermal conductive electrical insulators 5a, 5b, so that heat and electricity are prevented from leaking to the outside and the thermoelectric conversion efficiency is improved. Can be improved.

Therefore, the semiconductor device 1A thus configured is housed in a container (not shown) containing, for example, radioactive waste, and one of the high heat conductive electrical insulators, for example, 4b, of the semiconductor device 1A. When the outer surface is brought into contact with or joined to the inner surface of the container, the contact or joined surface side becomes the low-temperature side, and the outer surface side of the other high heat conductive electrical insulator 4a facing the radioactive waste forms heat from the radioactive waste. As a result, the temperature becomes high, and the gamma rays from the radioactive waste collide with the uranium of the uranium-based semiconductor element 2A and are converted into heat.

In this way, a temperature difference is generated between both surfaces of the uranium-based semiconductor element 2A, and electricity is generated. Further, since gamma rays emitted from radioactive waste collide with the uranium-based semiconductor element 2A and are converted into heat, it is possible to reduce the adverse effect on the human body to the outside and also convert this amount of heat into electricity. Therefore, the thermoelectric conversion efficiency can be improved.

FIG. 2 is a longitudinal sectional view of a self-heating type semiconductor device 1B according to a second embodiment of the present invention. The semiconductor device 1B includes a semiconductor in which impurities such as antimony are added to a mixture of metal uranium and plutonium, or a plurality of uranium-based semiconductor elements 2B that are uranium compound semiconductors.
For example, two of the uranium-based semiconductor elements 2B are arranged side by side, and an electrode 3c is interposed in a gap between the uranium-based semiconductor elements 2B.
d and 3e are respectively joined.

A pair of low thermal conductive insulators 5a and 5b such as alumina are joined and contacted with the electrodes 3c to 3e and the upper and lower surfaces of the uranium-based semiconductor element 2B in the drawing. Low thermal conductive electrical insulator 5a,
5b, high thermal conductive insulators 4a, 4b, such as beryllia, are provided on both left and right end surfaces in FIG.
Are joined or contacted over the entire circumference to cover them, and the electric wires 6c and 6d are electrically connected to the inner electrode 3c and one of the outer electrodes, for example, 3e.

Therefore, when the plurality of semiconductor devices 1B configured as described above are accommodated in a container accommodating a coolant (not shown) in a circulating manner, the uranium-based semiconductor element 2B mixes plutonium with metallic uranium. Therefore, while the uranium-based semiconductor element 2B itself generates heat, the outer surface portions of the high thermal conductive electrical insulators 4a and 4b of the semiconductor device 1B in contact with the flowing coolant become low-temperature portions to be cooled, while the central portion thereof is Since it is difficult to be cooled by the coolant, the temperature becomes high. As a result, a large temperature difference occurs in each uranium-based semiconductor element 2B, and electricity is generated, and this electricity is output to the outside through the electrodes 3c and 3e and the electric wires 6c and 6d, respectively.

FIG. 3 is a longitudinal sectional view of a self-heating type semiconductor device 1C according to a third embodiment of the present invention. This self-heating type semiconductor device 1C is obtained by replacing each uranium-based semiconductor element 2B of the semiconductor device 1B shown in FIG. 2 with each uranium-based semiconductor element 2C obtained by adding an impurity such as antimony or thallium to metallic uranium of enriched uranium. There is a feature, and other configurations are the same as those of the semiconductor device 1B shown in FIG.

That is, since each uranium-based semiconductor element 2C is enriched with metallic uranium, these uranium-based semiconductor elements 2C themselves generate heat and have high thermoelectric conversion efficiency, but do not contain plutonium that emits strong alpha rays. Easy to manufacture.

FIG. 4 is a longitudinal sectional view of a semiconductor device 1D according to a fourth embodiment of the present invention. This semiconductor device 1D is characterized in that the uranium-based semiconductor element 2A of the semiconductor device 1A shown in FIG. 1 is replaced with a uranium-based semiconductor element 2D, and the other configuration is the same as that of the semiconductor device 1A.

The uranium-based semiconductor element 2D is formed by coating the outer surface of a plurality of particles 7 of a semiconductor or a uranium compound semiconductor obtained by adding an impurity such as antimony or thallium to metallic uranium with a coating 8 of a low heat conductive high electric conductor such as renewal oxide. The coated semiconductor particles respectively coated with the above are mixed and pressed, or sintered and annealed to be integrally formed into a flat plate or a film, or a pair of upper and lower electrodes 3a, 3b and a low heat conductive electric insulator 5 are formed.
The space surrounded by a and 5b is used as a container, and the container is filled with vibration. In addition, the particle diameter of the plurality of coated semiconductor particles is set to, for example, three or more types to improve the density of the unit space.

Accordingly, when heat is applied from radioactive waste or the like to only one of the upper and lower surfaces of the semiconductor device 1D in the drawing, for example, only the high thermal conductive electrical insulator 4a in the upper portion of FIG. Is a high temperature part, and a lower part is a low temperature part, so that a temperature difference occurs. For this reason, electricity is generated in the semiconductor particles 7, and the electricity reaches the electrodes 3a and 3b through the coating 8 having good electric conductivity, so that the electric conductivity can be improved. Further, since the coating 8 has a property of low thermal conductivity, the amount of heat input to each semiconductor particle 7 leaking to the outside can be reduced, and the thermoelectric conversion efficiency can be improved.

Further, since the particle size of the coated semiconductor particles 7 is set to a plurality of types, the packing density thereof can be improved. Therefore, it is possible to increase both the amount of generated electricity and the gamma ray shielding effect. It should be noted that even if these semiconductor particles 7 are made of a uranium oxide having poor electric and thermal conductivity as a semiconductor, substantially the same effect as that of metal uranium can be obtained.

FIG. 5 is a longitudinal sectional view of a semiconductor device 1E according to a fifth embodiment of the present invention. In this semiconductor device 1E, the outer surfaces of the plurality of semiconductor particles 7 of the semiconductor device 1D shown in FIG. Is characterized in that the uranium-based semiconductor element 2E is formed by dispersing and mixing.

Therefore, when heat is applied from only one of the pair of high heat conductive electric insulators 4a and 4b, for example, only the side 4a, the semiconductor particles 7 on the high heat conductive electric insulator 4a side become a high temperature part, while the other high heat conductive electric insulator 4a and 4b become high temperature parts. The temperature of the semiconductor particles 7 on the side of the conductive electric insulator 4b becomes low and a temperature difference occurs, so that electricity is generated in the semiconductor particles 7. The electricity generated by these semiconductor particles 7 is converted into a low thermal conductive high electrical conductor 9 having high electrical conductivity.
Through the electrodes 3a and 3b, thereby improving the electrical conductivity. In addition, since the low heat conductive high electric conductor 9 has a low thermal conductivity, it is possible to reduce the leakage of heat generated by the semiconductor particles 7 to the outside. For this reason, the thermoelectric conversion efficiency can be improved.

Further, since the gap between the semiconductor particles 7 is densely filled with the low thermal conductive and high electrical conductor 9, the electrical conductivity and the gamma ray shielding performance can be improved. Further, as in the fourth embodiment, a plurality of fine semiconductor particles 7
Are not respectively covered with the low heat conductive high electric conductor 9,
The manufacture of this semiconductor device 1E is easy.

Even when the semiconductor particles 7 are formed of a uranium oxide semiconductor having both poor electrical and thermal conductivity, the same effect as that of metallic uranium can be obtained.

FIG. 6 is a longitudinal sectional view of a semiconductor device 1F according to a sixth embodiment of the present invention. In this semiconductor device 1F, the uranium-based semiconductor element 2A of the semiconductor device 1A shown in FIG. 1 is replaced with a plurality of thin plate-shaped or film-shaped uranium-based semiconductor elements 2F and a plurality of thin plate-shaped or film-shaped low thermal conductivity elements made of oxide renewal or the like. It is characterized in that it is replaced with a laminated body 11 in which electric conductors 10 are alternately laminated.

Each uranium-based semiconductor element 2F is formed by adding a pentavalent or trivalent impurity such as antimony or thallium to metal uranium to form an n-type or p-type semiconductor thin film. Has a high thermal conductivity, so that a large temperature difference does not occur only with metallic uranium. However, since a low thermal conductive high electrical conductor 10 having low thermal conductivity is interposed between these uranium-based semiconductor elements 2F, A temperature difference can be generated between these low heat conductive high electric conductors 10.

Therefore, the pair of high thermal conductive electrical insulators 4
When heat is applied from a radioactive waste or the like (not shown) only to one of the sides 4a and 4b, for example, the high heat conductive electrical insulator 4a
The uranium-based semiconductor element 2F on the side of the other high thermal conductive electrical insulator 4b while the uranium-based semiconductor element 2F on the side
Becomes a low temperature part and a temperature difference is generated, so that electricity is generated in each uranium-based semiconductor element 2F.

Alternatively, a pair of high thermal conductive electrical insulators 4
When heat is applied from both sides of a and 4b, a high temperature portion is formed on both sides and a low temperature portion is formed between the two portions, and a temperature difference is generated, and electricity is generated in each uranium-based semiconductor element 2F.

The electricity generated in this way is converted into each of the low heat conductive high electric conductors 10 having high electric conductivity and each uranium-based semiconductor element 2.
It flows to each electrode 3a, 3b via F, and is output to the outside from the electric wires 6a, 6b.

Since the low thermal conductive high electrical conductor 10 having low thermal conductivity is interposed between the uranium-based semiconductor elements 2F, a large temperature can be generated and the thermoelectric conversion efficiency can be improved. it can. In addition, since the low heat conductive high electric conductor 10 has high electric conductivity, electricity generated in each uranium-based semiconductor element 2F is efficiently transmitted to each electrode 3a, 3b through the low heat conductive high electric conductor 10. Can be done.

FIG. 7 is a longitudinal sectional view of a semiconductor device 1G according to the seventh embodiment of the present invention. In this semiconductor device 1G, a pair of upper and lower electrodes 3a and 3b in the figure of the semiconductor device 1F shown in FIG. 6 are omitted, and the outer surfaces (upper and lower surfaces in FIG. 7) of the low thermal conductive high electric conductors 10 at the upper and lower ends. While the high heat conductive electric insulators 4a and 4b are directly joined or contacted with each other, one electrode 3f is connected to one end face of a laminated body 11 of each uranium-based semiconductor element 2F and each low heat conductive high electric conductor 10 (in FIG. 7). It is characterized in that the number of electrodes 3f is reduced to one by being densely interposed between the left end surface (the left end surface) and the low heat conductive electric insulator 5a at the left end in the figure. The electrode 3f is made of a low heat conductive high electric conductor such as an oxide renewal, and a pair of electric wires 6e and 6f are connected to both ends thereof.

Therefore, the electricity generated in each uranium-based semiconductor element 2F is directly conducted to one electrode 3f without passing through each of the low heat conduction and high electric conductors 10, so that the electric conduction efficiency can be improved. it can. Also, if the electrode 3f is 1
Since the number is individual, the cost can be reduced.

FIG. 8 is a longitudinal sectional view of a semiconductor device 1H according to an eighth embodiment of the present invention. This semiconductor device 1
H denotes each of the low heat conductive high electric conductors 10 of the semiconductor device 1G shown in FIG.
The feature is that each is replaced.

Accordingly, the electricity generated in each of the uranium-based semiconductor elements 2F is low because the low-thermal-conductivity and low-electrical conductors 12 that are in contact with both surfaces of the uranium-based semiconductor elements 2F have low electric conductivity. It is directly conducted to the electrode 3f without passing through the body 12. For this reason, the electric conduction efficiency can be improved.

FIG. 9 is a longitudinal sectional view of a semiconductor device 1I according to a ninth embodiment of the present invention. This semiconductor device 1
I is obtained by adding the uranium-based semiconductor element 2F of the semiconductor device 1G shown in FIG. 7 or the semiconductor device 1H shown in FIG. 8 to n-type or p-type by adding pentavalent or trivalent impurities such as antimony or thallium to uranium oxide. Flat or thin film semiconductor element 2G
Is characterized in that a laminated body 14 with the low heat conductive and high electric conductor 10 is configured by substituting the above.

Since the uranium oxide of each uranium-based semiconductor element 2G has low thermal conductivity, a large temperature difference can be obtained.
The conversion efficiency from heat to electricity can be improved.

On the other hand, this uranium oxide generally has low electric conductivity, and therefore has a low thermoelectric conversion efficiency. However, the electricity generated in each of these uranium-based semiconductor elements 2G is generated by the low heat conductive high electric conductor 10 in contact with both surfaces thereof. Without directly passing through the electrode 3f
, The thermoelectric conversion efficiency can be compensated.

The uranium-based semiconductor elements 2F, 2G
May be replaced with the following uranium-based semiconductor elements.

[0104]

[Outside 1]

The high / low thermal conductivity and the high / low electrical conductivity are based on the thermal conductivity and electrical conductivity of uranium or uranium oxide.

[0106]

As described above, according to the present invention, since uranium, which is a heavy metal, is used as both a semiconductor and a radiation shield, heat from radioactive wastes can be effectively and inexpensively converted into electricity. .

[Brief description of the drawings]

FIG. 1 is a longitudinal sectional view of a semiconductor device according to a first embodiment of the present invention.

FIG. 2 is a longitudinal sectional view of a semiconductor device according to a second embodiment of the present invention.

FIG. 3 is a longitudinal sectional view of a semiconductor device according to a third embodiment of the present invention.

FIG. 4 is a longitudinal sectional view of a semiconductor device according to a fourth embodiment of the present invention.

FIG. 5 is a longitudinal sectional view of a semiconductor device according to a fifth embodiment of the present invention.

FIG. 6 is a longitudinal sectional view of a semiconductor device according to a sixth embodiment of the present invention.

FIG. 7 is a longitudinal sectional view of a semiconductor device according to a sixth embodiment of the present invention.

FIG. 8 is a longitudinal sectional view of a semiconductor device according to an eighth embodiment of the present invention.

FIG. 9 is a longitudinal sectional view of a semiconductor device according to a ninth embodiment of the present invention.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1A-1I Semiconductor device 2A-2G Uranium semiconductor element 3a-3F Electrode 4a, 4b High thermal conductive electrical insulator 5a, 5b Low thermal conductive electrical insulator 6a-6d Electric wire 7 Semiconductor particles which add antimony impurity to metallic uranium 8 Coating 9,10 Low thermal conductivity High electrical conductor 11,13,14 Laminate

Claims (26)

[Claims] 1. A uranium-based semiconductor device formed by adding a pentavalent impurity such as antimony, bismuth or phosphorus to metal uranium to form an n-type. 2. A uranium-based semiconductor element formed by adding a trivalent impurity such as thallium, indium or aluminum to uranium metal to form a p-type. 3. A uranium-based semiconductor device comprising a uranium compound such as uranium sulfide, uranium nitride, or uranium silicide added with a pentavalent or trivalent metal or an impurity of the compound. 4. A uranium-based semiconductor device wherein the metal uranium according to claim 1 or 2 or the uranium compound according to claim 3 is enriched uranium. 5. A uranium-based semiconductor device, wherein the uranium metal according to claim 1 or 2 or the uranium compound according to claim 3 is obtained by mixing plutonium. 6. A uranium-based material formed by adding a pentavalent impurity such as antimony, bismuth or phosphorus to an amorphous material obtained by hydrogenating, fluorinating or oxygenating metallic uranium to form an n-type. Semiconductor element. 7. A uranium-based metal formed by adding trivalent impurities such as thallium, indium, or aluminum to amorphous obtained by hydrogenating, fluorinating, or oxygenating metal uranium to form a p-type. Semiconductor element. 8. A uranium-based semiconductor device, wherein the metal uranium according to claim 1, 2, 4, 5, 6, 7 is replaced with uranium oxide. 9. The surface of a plurality of particles of 2.00 to 2.1 uranium oxide semiconductors having a higher oxygen content than uranium dioxide has higher electric conductivity and higher electric conductivity than the 2.00 to 2.1 uranium oxide semiconductors. A uranium-based semiconductor device characterized by being coated with a film of a material having low thermal conductivity and integrally forming a plurality of types of coated particles having different particle sizes. 10. The surface of a plurality of particles of 1.999 to 1.9 uranium oxide semiconductor having a lower proportion of oxygen than uranium dioxide has higher electric conductivity and higher electric conductivity than that of said 1.999 to 1.9 uranium oxide semiconductor. A uranium-based semiconductor element formed by integrally forming a plurality of types of coated particles having different particle diameters, which are coated with a film of a material having low thermal conductivity. 11. The weight ratio of silicon to iron to uranium is 1: 0.1.
A uranium-based semiconductor device characterized by adding a pentavalent or trivalent metal impurity to an oxygenated amorphous semiconductor having a ratio of 99 to 0.992 to 0.1 to 0.008. 12. A plurality of uranium-based semiconductor elements according to claim 1, wherein the particle surfaces of the plurality of uranium-based semiconductor elements are coated with a film of a substance having high electrical conductivity and low thermal conductivity, and these have different particle sizes. A uranium-based semiconductor device characterized by being integrally formed with the coated particles of the above. 13. A uranium-based semiconductor device comprising the uranium-based semiconductor device according to claim 1 dispersed and mixed in a material having high electrical conductivity and low thermal conductivity. 14. A semiconductor formed by dispersing and mixing a substance having high electrical conductivity and low thermal conductivity into a semiconductor made of a non-fission substance having high density and low electrical conductivity, and adding uranium as an impurity to the semiconductor. Uranium-based semiconductor device. 15. A uranium-based semiconductor device according to claim 1, and a high thermal conductive electrical insulation laminated on one surface and the other surface of the uranium-based semiconductor device via a pair of electrodes, respectively. Body, these uranium-based semiconductor elements,
A low thermal conductive electrical insulator covering an end face of the electrode and the high thermal conductive electrical insulator perpendicular to the laminating direction. 16. A plurality of uranium-based semiconductor elements according to claim 1, a plurality of electrodes alternately stacked with these uranium-based semiconductor elements, and a plurality of uranium-based semiconductor elements and electrodes. A low thermal conductive electrical insulator covering an end surface orthogonal to the laminating direction of the high thermal conductive electrical insulator joined or contacted to both end surfaces of the low thermal conductive electrical insulator and an outer surface of a pair of electrodes located on both end surface sides thereof And a body. 17. A uranium-based semiconductor element or an amorphous semiconductor powder compact thereof according to any one of claims 1 to 14, which is joined or brought into contact with an electrode made of a high melting point and high electric conductivity powder compact. The other end surface of the electrode other than the wire lead-out portion is brought into contact with a high heat conductive electric insulator made of a powder compact of a material having a high electric insulation and a good heat conductivity, and these gaps are made of silicon oxide or alumina. A semiconductor device characterized by being filled with an electrically insulating powder of the above and then subjected to integral compression molding or subsequent sinter annealing. 18. A plurality of uranium-based semiconductor elements according to claim 1, a plurality of low-thermal-conductivity high-electric conductors alternately stacked with these uranium-based semiconductor elements; A high heat conductive electrical insulator laminated via a pair of electrodes on outer surfaces of a pair of uranium semiconductor devices located at both ends in the stacking direction of the high electrical conductor and the uranium semiconductor device; A semiconductor device comprising: a low thermal conductive electrical insulator covering an end surface of a series semiconductor element and a low thermal conductive high electrical conductor perpendicular to a laminating direction. 19. A plurality of uranium-based semiconductor devices according to any one of claims 1 to 14, a plurality of low-thermal-conductivity high-electrical conductors alternately stacked with these uranium-based semiconductor devices, and a low-thermal conductivity. A high thermal conductive electrical insulator laminated on the outer surfaces of a pair of uranium based semiconductor elements located at both ends in the stacking direction of the high electrical conductor and the uranium based semiconductor element; An electrode joined to one end face orthogonal to the laminating direction, and an outer face of the electrode and one end face of each of the pair of high heat conductive electric insulators, and these high heat conductive electric insulators, a uranium-based semiconductor element, and a low heat conductive high electric conductor; And a low thermal conductive electrical insulator covering each one end face orthogonal to the laminating direction of the semiconductor device. 20. A uranium-based semiconductor element or an amorphous semiconductor thereof, an electrode low thermal conductive electrical insulator, a low thermal conductive high electrical conductor and a high thermal conductive electrical insulator are each formed by a compressed powder compact, and these compacted powder compacts are formed. The semiconductor device according to claim 18, wherein the semiconductor device is formed integrally by sintering and annealing. 21. The semiconductor device according to claim 18, wherein the low heat conductive high electric conductor is replaced by a low heat conductive low electric conductor. 22. The semiconductor device according to claim 15, wherein the high thermal conductive electrical insulator is made of beryllia. 23. The semiconductor device according to claim 15, wherein the low thermal conductive electrical insulator is made of alumina. 24. The semiconductor device according to claim 19, wherein the low heat conductive high electric conductor is made of tungsten or oxide renewal. 25. The semiconductor device according to claim 15, wherein a conductive wire is electrically connected to the electrode. 26. A power generation facility, comprising: the semiconductor device according to claim 15; and radioactive waste that is a heat source of the semiconductor device.