JPH11163447A - Pulsed gas laser oscillator and laser anneal device using the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain a pulsed gas laser oscillator and a laser anneal device using it for generating desired pulse waveform, without lowering the efficiency of laser oscillation. SOLUTION: In this pulse laser oscillator, peaking capacitors 7a, 7b and 7c are respectively connected to a main discharge electrode 10 in parallel in plural steps through reactors 8a, 8b and 8c having different inductances, and an inductance related to the connection of a power supply connection part 33 for connecting a pulse compression circuit unit 17 and peaking capacitors 7a, 7b and 7c is made variable, thereby arbitrarily changing the pulse waveform of laser light intensity without lowering the efficiency of laser oscillation, which has been difficult in the conventional system. Furthermore, the pulse laser oscillator is used in a laser anneal device, resulting in the emission of laser light having a large pulse width suitable for annealing to an object to be processed.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a pulsed gas laser oscillation device and a laser annealing device using the same.

[0002]

2. Description of the Related Art In a process of manufacturing a liquid crystal display device or a semiconductor, a technology for lowering the temperature of a process is being developed.

As one of the techniques, a method of performing a thermal annealing process for crystallization of an amorphous substance and for improving the grain size of the crystalline substance in order to improve the film quality of the thin film has been advanced. Since ordinary thermal annealing treatment reaches a high temperature of about 600 ° C. or more, it is often necessary to use an expensive quartz substrate or the like having a high melting point as a substrate material.

However, a laser annealing apparatus which has recently become popular has generally used an excimer laser. This is because the use of an excimer laser makes it possible to perform annealing at a high output and a low temperature process of about 450 ° C. That is, when an excimer laser is used, the material can be crystallized by irradiating the substrate with laser light, instantaneously melting and solidifying the material.

However, since the excimer laser ignites and oscillates a uniform discharge in a high-pressure gas (2 to 6 atm) containing a halogen gas, which is a negative gas, it is difficult to maintain the discharge. Therefore, in reality, the laser pulse waveform of a normal excimer laser only has a full width at half maximum of about 10 to 50 ns.

It has been reported that a special spiker sustainer circuit and a large apparatus for X-ray preionization can realize a pulse width of about 200 ns. Not in.

[0007]

However, depending on the conditions of the annealing process, there are cases in which the shape and pulse width of the laser pulse to be irradiated are required to be those which cannot be realized by the conventional excimer laser. .

In other words, in the annealing process that requires the growth of the crystal grain size, it is preferable that the time from the melting of the material to the solidification be longer to some extent, so that the pulse width of the laser beam can be increased. It is required that the pulse shape be changed according to the condition of the object to be processed. For example, Jpn. J. Appl. Phys. Vol. 34
(1995) pp 1759-1764 discloses a technique for increasing the pulse width by superposing light from a plurality of laser devices.

However, in this case, for example, in order to ensure uniform heating of a large-area semiconductor substrate used in a liquid crystal display device, laser irradiation is performed at a high repetition rate while a laser is irradiated onto the semiconductor substrate. Heating by scanning light is also required.

FIG. 10 shows an equivalent circuit of a pulse laser oscillation device used in the conventional annealing process.
The charging resistor 2, the main capacitor 4, and the floating inductance 6 are connected in series to the high-voltage power supply 1. A high voltage switch element 3 such as a thyratron, a charging reactor 5 such as a coil, a series circuit of a preliminary ionizing electrode 9, a peaking capacitor 7 and a floating inductance 7, and a main discharge electrode 10 are connected in parallel with the high voltage power supply 1. ing. The preliminary ionization electrode 9 and the main discharge electrode 10
Are disposed in a gas chamber (not shown) in which a high-pressure gas of about 2 to 6 atm containing a halogen gas as a negative gas is sealed.

With these structures, for example, when the high voltage switching element 3 is short-circuited while the main capacitor 4 is charged by the high voltage of 26 KV supplied from the high voltage power supply 1, the potential difference between the high voltage switching element 3 and the pre-ionization electrode 9 Are conducted due to insulation breakdown, and the electric charge charged in the main capacitor 4 moves to the peaking capacitor 7.

At this time, since the preliminary ionization discharge is ignited in the gap between the preliminary ionization electrodes 9, the peaking capacitor 7
When the charge voltage exceeds the discharge start voltage between the main discharge electrodes 10, the main discharge is ignited and laser light is oscillated.

FIG. 11A is a waveform diagram showing a discharge waveform flowing between the main discharge electrodes 10 after the high voltage switching element 3 is short-circuited. FIG. 11B is a waveform diagram showing the waveform of the pulsed laser light intensity actually oscillated. As shown, the laser beam has two peaks, and the full width at half maximum of the larger first peak is 20 ns.

However, the full width at half maximum of the pulse waveform of the laser light obtained by this type of laser oscillation device is 10 to 10 as described above.
Since it is about 50 ns and it is difficult to change the pulse shape, it has not been able to sufficiently meet the demand. (Although the full width at half maximum is 75 ns, operation at 1 Hz has been reported, but repeated operation is not possible.)

Further, the value of the reactor is reduced to a typical value of 15 nH.
A report in which the pulse waveform of the laser beam was lengthened by delaying the rise of the discharge current by increasing the discharge current from the following (Preliminary Proceedings of the Fall Society of 1986 28P-E-1)
Although there is 1), the oscillation efficiency is considerably reduced.

The spiker-sustainer circuit described above is complicated (for example, disclosed in Japanese Patent Application Laid-Open No. 5-283777) and has the disadvantage that two switching elements must be used. A large-sized apparatus for X-ray preliminary ionization using X-rays is not practical because it is expensive and has problems such as a large installation area and a limitation on repetition.

Under these circumstances, there is an increasing demand for a conventional apparatus that can increase the pulse width of a laser beam or change the pulse shape according to process conditions.

The present invention has been made in view of the above circumstances, and has as its object the purpose of growing and expanding the crystal grain size,
A pulse gas laser oscillation device that can change the pulse shape of laser light according to the conditions of the object to be processed, such as crystallizing amorphous silicon on a semiconductor substrate into polysilicon with good electron mobility, and its pulse laser oscillation An object of the present invention is to provide a laser annealing apparatus using the apparatus.

[0019]

According to the present invention, there is provided a container in which an excitation gas is filled, a pair of main discharge electrodes provided at predetermined positions in the container, and a pair of main discharge electrodes. A plurality of pairs of pre-ionized electrodes, a pulse power supply unit for generating power to be supplied between the electrodes, and peaking connected in parallel to the pair of main discharge electrodes for storing power from the power supply unit. A pulse laser oscillation device comprising: a capacitor; a power supply connection unit for electrically connecting the pulse power supply unit and the peaking capacitor; and an optical resonator for amplifying light excited between the main discharge electrodes. The capacitor has a configuration in which a plurality of capacitors are connected in parallel to the main discharge electrode via a reactor having a different inductance value, and the power supply connection portion is connected to this connection. In pulsed gas laser oscillator, wherein the inductance value is variable structure.

Further, according to the present invention, by setting each capacitance value of the peaking capacitor, each inductance value of the reactor, and the inductance value of the power supply connection portion, the intensity of light oscillated from the optical resonator is set. A pulse gas laser oscillation device characterized in that a time change is controlled.

According to the present invention, the preliminary ionization electrode is connected in series to one of the plurality of stages of the capacitor and the reactor constituting the peaking capacitor, and is connected to the preliminary ionization electrode. Wherein the capacitance value of the capacitor and the inductance value of the reactor are both minimum relative to the other stages.

Further, according to the present invention, the power supply connection section has a plurality of high voltage introduction terminals and a plurality of ground terminals, and the number of connection of each terminal and the shape of a connection component are changed. The pulse gas laser oscillation device according to claim 1, wherein

Further, according to the present invention, the pulse power supply section has a switching circuit and a magnetic pulse compression circuit, and the magnetic pulse compression circuit changes the total saturation magnetic flux amount by a magnetic switch using a plurality of supersaturation reactors. The pulse gas laser oscillation device is characterized in that it can be connected to the container in which the excitation gas is sealed and is connected only to the terminal of the power supply connection portion.

Further, according to the present invention, a container in which the excitation gas is sealed, a pair of main discharge electrodes provided at predetermined positions in the container, and a plurality of main discharge electrodes arranged with respect to the main discharge electrodes. A pair of preliminary ionizing electrodes, a pulse power supply unit for generating power to be supplied between the electrodes, a peaking capacitor connected in parallel to the pair of main discharge electrodes for storing power from the power supply unit, and the pulse A pulse laser oscillation device including a power supply unit for electrically connecting a power supply unit and a peaking capacitor, and an optical resonator for amplifying light excited between the main discharge electrodes; A laser annealing apparatus having an irradiation unit for irradiating the object to be processed stored in the chamber with the pulsed light, wherein the peaking capacitors are different from each other. Pulse gas laser oscillation, wherein a plurality of stages are connected in parallel to the main discharge electrode via a reactor having a value, and the power supply connection section has a variable inductance value relating to this connection. In the device.

Further, according to the present invention, by setting each capacitance value of the peaking capacitor, each inductance value of the reactor, and the inductance value of the power supply connection portion, the intensity of light oscillated from the resonator changes with time. Is controlled in the laser annealing apparatus.

Further, according to the present invention, the preliminary ionizing electrode is connected in series to one of the plurality of stages of the capacitor and the reactor constituting the peaking capacitor, and is connected to the preliminary ionizing electrode. The laser annealing apparatus is characterized in that both the capacitance value of the capacitor and the inductance value of the reactor are minimum with respect to other stages.

Further, according to the present invention, the power supply connection section has a plurality of high voltage introduction terminals and a plurality of ground terminals, and changes the number of connected terminals and the shape of the connected parts. In the device.

Further, according to the present invention, the pulse power supply section has a switching circuit and a magnetic pulse compression circuit, and the magnetic pulse compression circuit changes the total saturation magnetic flux amount by a magnetic switch using a plurality of supersaturated reactors. The laser annealing apparatus is characterized in that it is possible to connect the container with the excited gas and only the terminal of the power supply connection section.

[0029]

Embodiments of the present invention will be described below with reference to the drawings.

FIG. 1 is a circuit diagram showing an equivalent circuit of a pulse laser oscillation device. A switching circuit unit 18 is connected to the high-voltage power supply 1, and the switching circuit unit 18
Is connected to a pulse compression circuit unit 17. Further, the laser tube 16 is connected to the pulse compression circuit unit 17 via a connection terminal 33.

The switching circuit unit 18 comprises a high voltage switching element 3 connected in parallel to the high voltage power supply 1 and a charging resistor 2, a main capacitor 4 and a floating inductance 6 connected in series to the high voltage power supply 1. Have been.

The pulse compression circuit unit 17 comprises a pulse compression capacitor 15 and a charging reactor 5 connected in parallel to the high-voltage power supply 1, and a supersaturated reactor 14 connected in series to the high-voltage power supply 1. .

The connection terminal 33 is composed of a high-voltage introduction terminal 12 and a ground terminal 13, and both terminals 12, 13 are connected to a circuit on the other side by a copper plate. The high-voltage introduction terminals 12 are arranged in a line while maintaining a predetermined insulation value, and the connection terminals 33 are arranged so as to surround the periphery thereof. The number of copper plates connecting the terminals 12 and 13 is arbitrarily selected according to desired inductance. Also, this connection terminal 3
Reference numeral 3 is designed to easily open and close a cover (not shown) so that work can be easily performed from the outside.

A circuit is provided in the laser tube 16 in parallel with the high-voltage power supply 1. In this circuit, reactors 8a, 8b, 8c... 8n connected in series to peaking capacitors 7a, 7b, 7c... 7n are connected in series to n stages (n is an integer of 2 or more) or a preliminary ionization electrode 9. For example, a three-stage peaking capacitor 7a, 7b, 7c and a reactor 8a, 8b, 8c connected thereto are connected, and a preliminary ionization electrode 9 is connected in series. A main discharge electrode 10 is arranged electrically in parallel with the preionization electrode 9 and at a position facing the same. The preionization electrode 9 and the main discharge electrode 10 are housed in a gas container 11 in which a gas medium is sealed.

The capacitance Cm of the main capacitor 4, the capacitance Cc of the pulse compression capacitor 15, and the capacitances of the peaking capacitors 7a, 7b, 7c are denoted as C1, C2, C3, and the inductance values of the reactors 8a, 8b, 8c. Are set so that the following relationship is satisfied when is set to L1, L2, and L3.

Cm = Cc = C1 + C2 + C3 5C1 = C2 = C3 L1 <L2 <L3 As long as these relationships are satisfied, the number of stages of the peaking capacitors 7a, 7b, 7c and the respective capacitances and the peaking are adjusted in accordance with a desired pulse waveform. Capacitors 7a, 7
Reactors 8a, 8 connected in series to b, 7c
The inductance values and connection inductance values of b and 8c are set.

The operation of these arrangements will be described. When a current flows from the high-voltage power supply 1 to a loop circuit composed of the charging resistor 2 → the main capacitor 4 → the floating inductance 6 → the supersaturated reactor 14 a → the charging reactor 5, a high current is generated. The main capacitor 4 is charged with a high voltage of, for example, 26 KV generated by the voltage power supply 1.

In this state, when the high voltage switching element 3 is turned on by inputting a trigger pulse, the electric charge charged in the main capacitor 4 is changed to the main capacitor 4 → the high voltage switching element 3 → the pulse compression capacitor 15 →
The circuit shifts to the pulse compression capacitor 15 in the circuit of the floating inductance 6. The supersaturated reactor 14a is magnetically saturated at the timing when the voltage of the pulse compression capacitor 15 becomes maximum, and the pulse compression capacitor 15 → ground terminal 13 →
Peaking capacitor 7c / peaking capacitor 7b
→ Reactor 8c / Reactor 8b → High voltage introduction terminal 12
→ The charging of the peaking capacitor 7c and the peaking capacitor 7b is started in the circuit of the supersaturated reactor 14a. Thereby, when the voltage rises between the preionization electrodes 9 and becomes equal to or higher than the breakdown voltage, charging of the peaking capacitor 7a also starts. At this time, the preionization discharge is ignited between the preionization electrodes 9. The high-voltage introduction terminal 12 and the ground terminal 13 are connected to the pulse compression circuit unit 17 of the power supply unit and the laser tube 1.
6 shows an inductance component of the connection terminal 33 of FIG.

Each peaking capacitor 7a, 7b, 7c
Are 8a: 1 in connection with the main discharge electrode 10, respectively.
Reactors 8a, 8b, 8c of 5nH, 8b: 45Hn, and 8c: 90nH are inserted. When the charging voltage of the peaking capacitors 7a, 7b, 7c exceeds the discharge starting voltage between the main discharge electrodes 10, the main discharge is fired. At this time, as shown in FIG. 2, a current mainly flows from the reactor 8a having the smallest inductance through the main discharge electrode 10. The current Ib from the reactor 8b has a larger inductance than the current Ia from the reactor 8a and reaches the peak with a time delay and flows through the main discharge electrode 10. The same applies to the current Ic from the reactor 8c.

As a result, as shown in FIG. 3, a discharge current having a larger cycle than that of the conventional (dotted line) flows, so that the full width at half maximum becomes 100 ns as compared with the conventional 20 ns as shown in FIG. The pulse width of light increases.

At this time, the shape of the pulse waveform can be changed by increasing or decreasing the inductance relating to the connection between the pulse compression circuit unit 17 and the laser tube 16. FIG. 5 shows a typical pulse waveform shape, in which the full width at half maximum becomes 100 ns which is the maximum (b), whereas the pulse waveform as shown in FIG. Conversely, when the inductance related to the connection is increased, a pulse waveform as shown in (c) can be obtained.

Next, a method of changing the inductance for connection will be described with reference to FIGS. 6 (a) and 6 (b). FIG. 6A is a side view of the laser device, and FIG. 6B is a perspective view from above. 6A and FIG.
(B) shows only the laser tube 16, the pulse compression circuit unit 17, and the switching circuit unit 18. Thus, the inductance relating to a desired connection is obtained by changing the number of connections between the high-voltage introduction terminal 12 and the ground terminal 13 using a copper plate.

That is, when the inductance for connection is small as shown in FIG. 5A, all the terminals 12a, 12b, 13a and 13b shown in FIG. 6B are connected by a copper plate. In the case of FIG. 5B, all of the high-voltage introduction terminals 12a and 12b and the four ground terminals 13a were connected by copper plates. As shown in FIG. 5C, when the inductance related to the connection is large, only one of the high voltage introduction terminals 12a and 13 of the ground terminal are used.
a were connected with a copper plate. Since these combinations are arranged as data, an inductance relating to a desired connection can be obtained by arbitrarily selecting and using the data as needed.

In the configuration of FIG. 1, three stages of peaking capacitors 7a, 7b, 7c are provided, but four or more stages may be provided, and the capacitance value is also C2 = C3 =... Cn.
It is not limited to. The number of peaking capacitors 7a, 7b, 7c, the respective capacitance values, the peaking capacitors 7a, 7b, 7 according to the required pulse waveform shape
By combining the inductance values of each of the reactors 8a, 8b, 8c connected in series with c, an inductance value relating to the connection can be obtained.

That is, according to the present invention, the two settings of the peaking capacitors 7a, 7b, 7c of the laser tube 16 and the setting of the various conditions of the reactors 8a, 8b, 8c connected in series thereto and the setting of the connection terminal 33 are respectively adjusted. By doing so, a desired optical pulse waveform can be obtained. In addition,
Various conditions of the laser tube 16 are set at the design stage, and the adjustment of the connection terminal 33 can be easily adjusted from the outside even after the device is operated, so that it can be adjusted as needed to obtain an optimal light pulse waveform.

As a method of increasing the inductance related to the connection, in addition to the method of reducing the number of connection terminals 33, the same applies by changing the connection component from a copper plate to a high-voltage line (variable length) made of copper or the like. The effect is obtained.

Also, instead of changing the number of connection terminals 33, changing the total saturation inductance of the supersaturated reactor 14 by a pulse compression circuit as shown in FIG. 7 can obtain the same variable effect of the optical pulse waveform. In this case, since the components of the supersaturated reactors connected in series have different values, the total reactor is changed by arbitrarily changing the combination, so that a desired value is easily obtained.

FIG. 8 is a configuration diagram showing the configuration of a laser annealing apparatus including the laser oscillation apparatus shown in FIG.

Next, a laser annealing apparatus using the above-described pulse laser oscillation device will be described. FIG. 8 is a block diagram of a laser annealing apparatus according to one embodiment of the present invention. The mirror 24, the beam attenuator 25, and the beam homogenizer 26 are sequentially annealed on the optical axis of the pulse laser oscillation apparatus including the excimer laser tube 16. Chamber 2
9 are arranged. The annealing chamber 29 is connected to the annealing chamber 2 through the quartz window 28 from the light input direction.
A tray 31 on which the semiconductor substrate 30 is placed and a tray driving device 32 for driving the tray 31 are provided in the housing 9.

With these configurations, the excimer tube 16
Is reflected by the mirror 24 and the optical axis is bent by 90 degrees, attenuated by the beam attenuator 25 with a predetermined attenuation rate, and shaped into a linear laser beam by the beam homogenizer 26. The laser beam is applied to the semiconductor substrate 30 on the tray 31 via the quartz window 28. The tray 31 is a tray driving device 32
, And the entire surface of the semiconductor substrate 30 is sequentially irradiated.

For example, the full width at half maximum shown in FIG.
FIG. 9 shows a characteristic example of the crystal grain size obtained when the laser light of s is oscillated from the pulsed laser oscillator and the laser output is adjusted to change the energy density. The solid line α indicates the full width at half maximum of 100 ns. The dashed line β shows the case where the full width at half maximum is 20 ns as in the conventional case, and the crystal grain size grew by laser irradiation with a high energy density of 400 mJ / cm 2 or more by increasing the full width at half maximum. Since such a relationship changes depending on the condition (film quality, film pressure, and the like) of the object to be processed, it is important to change the width and shape of the laser pulse waveform according to the object to be processed.

[0052]

According to the present invention, in a pulse laser oscillation device, a peaking capacitor section is connected in plural stages to a main discharge electrode pair in parallel via reactors having different inductance values, and a pulse power supply section and a peaking capacitor are connected. Since the inductance relating to the connection of the power supply connection unit that connects the units is made variable, it is possible to arbitrarily change the pulse waveform of the laser light intensity, which has been difficult until now, without lowering the laser oscillation efficiency. Was.

Further, by using this pulse laser oscillation device for a laser annealing device, it becomes possible to irradiate a laser beam having a long pulse width suitable for annealing to a workpiece.

Further, the shape of the pulse waveform can be adjusted in accordance with the conditions such as the film quality and the film pressure of the object to be processed. It has become possible to form polysilicon having a certain degree.

[Brief description of the drawings]

FIG. 1 is a circuit diagram illustrating a circuit configuration of a pulse laser oscillation device according to an embodiment of the present invention.

FIG. 2 is a graph showing a state of a current flowing through a main discharge electrode 10 according to an inductance during discharging in the embodiment of the present invention.

FIG. 3 is a graph showing a comparison between an embodiment of the present invention and a conventional technique with respect to a state of a current flowing through a main discharge electrode 10.

FIG. 4 is a graph showing a comparison between the full width at half maximum of the light intensity of the laser pulse waveform according to the embodiment of the present invention and the conventional technique.

FIG. 5A is a graph in the case where the inductance related to connection is reduced by the light intensity of the laser pulse waveform. (B) A graph in the case where the inductance related to the connection is set to a medium level with the light intensity of the laser pulse waveform. (C) A graph when the inductance related to the connection is increased by the light intensity of the laser pulse waveform.

FIG. 6A is a side view showing a structure of a connection terminal portion in the embodiment of the present invention. (B) A plan view showing a structure of a connection terminal portion in the embodiment of the present invention.

FIG. 7 is a circuit diagram showing a modification of the pulse compression circuit unit in the embodiment of the present invention.

FIG. 8 is a configuration diagram showing a configuration of a laser annealing apparatus according to the embodiment of the present invention.

FIG. 9 is a graph showing annealing characteristics of the laser annealing apparatus of the present invention.

FIG. 10 is a circuit diagram showing a circuit configuration of a general laser oscillation device.

FIG. 11A is a graph showing discharge current characteristics of a general laser oscillation device. (B) A graph showing a laser pulse waveform of a general laser oscillation device.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... High voltage power supply, 3 ... High voltage switching element, 4 ... Main capacitor, 5 ... Charactering reactor, 6 ... Floating inductance, 7a, 7b, 7c ... Peaking capacitor, 8
a, 8b, 8c: reactor, 9: preliminary ionization electrode pair, 1
0: Main discharge electrode pair, 11: Gas container, 12: High voltage introduction terminal, 13: Ground terminal, 14: Supersaturated reactor, 16 ...
Laser tube, 17 ... pulse compression circuit unit, 18
... switching circuit unit, 24 ... mirror, 25 ... beam attenuator, 26 ... beam homogenizer, 29 ...
Annealing chamber

Claims (10)

[Claims] 1. A container in which an excitation gas is sealed, a pair of main discharge electrodes provided to face a predetermined position in the container, and a plurality of pairs of preliminary ionization electrodes arranged with respect to the main discharge electrodes. A pulse power supply for generating power to be supplied between the electrodes; a peaking capacitor connected in parallel to the pair of main discharge electrodes for storing power from the power supply; and the pulse power supply and the peaking capacitor. A pulse laser oscillation device comprising: a power supply connection portion for electrically connecting the main discharge electrode; and an optical resonator for amplifying light excited between the main discharge electrodes, wherein the peaking capacitors each have a reactor having a different inductance value. And a plurality of stages are connected in parallel to the main discharge electrode via the power supply connection portion, and the power supply connection portion has a variable inductance value related to this connection. Pulsed gas laser oscillator, wherein the door. 2. A time-dependent change in the intensity of light oscillated from the optical resonator is set by setting each capacitance value of the peaking capacitor, each inductance value of the reactor, and an inductance value of the power supply connection part. The pulse gas laser oscillation device according to claim 1, wherein: 3. The pre-ionization electrode is connected in series to one of a plurality of stages of a capacitor and a reactor constituting the peaking capacitor, and a capacitance value of the capacitor connected to the pre-ionization electrode. 2. The pulse gas laser oscillation device according to claim 1, wherein the inductance values of the reactor and the reactor are both minimum relative to other stages. 4. The power supply connection section according to claim 1, wherein the power supply connection section has a plurality of high voltage introduction terminals and a plurality of ground terminals, and the number of connection of each terminal and the shape of a connection component are changed. A pulse gas laser oscillation device as described in the above. 5. The pulse power supply section has a switching circuit and a magnetic pulse compression circuit, and the magnetic pulse compression circuit can change the total saturation magnetic flux amount by a magnetic switch using a plurality of supersaturated reactors. 2. The pulse gas laser oscillation device according to claim 1, wherein the container in which the excitation gas is sealed is connected only to the terminal of the power supply connection portion. 6. A container filled with an excitation gas, a pair of main discharge electrodes provided to face a predetermined position in the container, and a plurality of pairs of preliminary ionization electrodes arranged with respect to the main discharge electrodes. A pulse power supply for generating power to be supplied between the electrodes; a peaking capacitor connected in parallel to the pair of main discharge electrodes for storing power from the power supply; and the pulse power supply and the peaking capacitor. A pulse laser oscillation device including a power supply unit for electrically connecting the laser light source and an optical resonator for amplifying light excited between the main discharge electrodes, and a pulse light output from the pulse gas laser oscillation device in a chamber. A laser annealing apparatus having irradiation means for irradiating an object to be processed stored in a reactor, wherein each of the peaking capacitors has a different inductance value. Through a plurality of stages connected to each other in parallel with the main discharge electrodes, and the power connections are pulsed gas laser oscillator, wherein the inductance value of this connection is variable structure. 7. A method of controlling a time change of the intensity of light oscillated from the resonator by setting each capacitance value of the peaking capacitor, each inductance value of the reactor, and the inductance value of the power supply connection part. 7. The laser annealing apparatus according to claim 6, wherein: 8. The pre-ionization electrode is connected in series to one of a plurality of stages of a capacitor and a reactor constituting the peaking capacitor, and a capacitance value of a capacitor connected to the pre-ionization electrode is provided. 7. The laser annealing apparatus according to claim 6, wherein the inductance values of the reactor and the reactor are both minimum with respect to the other stages. 9. The laser annealing according to claim 6, wherein the power supply connection section has a plurality of high voltage introduction terminals and a plurality of ground terminals, and changes the number of connected terminals and the shape of the connected parts. apparatus. 10. The pulse power supply section has a switching circuit and a magnetic pulse compression circuit, and the magnetic pulse compression circuit can change the total saturation magnetic flux amount by a magnetic switch using a plurality of supersaturated reactors. ,And,
7. The laser annealing apparatus according to claim 6, wherein the container in which the excitation gas is sealed is connected only by the terminal of the power supply connection part.