JPH11162384A - Scanning electron microscope - Google Patents
Scanning electron microscopeInfo
- Publication number
- JPH11162384A JPH11162384A JP9326311A JP32631197A JPH11162384A JP H11162384 A JPH11162384 A JP H11162384A JP 9326311 A JP9326311 A JP 9326311A JP 32631197 A JP32631197 A JP 32631197A JP H11162384 A JPH11162384 A JP H11162384A
- Authority
- JP
- Japan
- Prior art keywords
- deflection
- secondary signal
- electron microscope
- scanning electron
- electron beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は電子線装置に係り、
特にサブミクロンオーダー（１μｍ以下）のコンタクト
ホールやラインパターンを有する試料を高分解能で観察
するのに好適な走査電子顕微鏡に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electron beam apparatus,
In particular, the present invention relates to a scanning electron microscope suitable for observing a sample having a contact hole or a line pattern on the order of submicrons (1 μm or less) at a high resolution.
【０００２】[0002]
【従来の技術】走査電子顕微鏡は、電子源から放出され
た電子線を試料上で走査して２次的に得られる二次電子
および反射電子（まとめて二次信号電子という）を検出
し、この二次信号を電子線の走査と同期して走査される
ブラウン管の輝度変調入力とすることで走査像（ＳＥＭ
像）を得ている。特開平９−１７１７９１号公報で述べ
られているように、試料を高分解能で観察する手段とし
て、対物レンズを通過する際の一次電子のエネルギーを
高くするブースティング及び対物レンズと試料間の減速
電界で低エネルギーに戻して試料に照射するリーターデ
ィングと呼ばれる方式が提案されている。2. Description of the Related Art A scanning electron microscope scans an electron beam emitted from an electron source on a sample and detects secondary electrons and reflected electrons (collectively referred to as secondary signal electrons) which are obtained secondarily. By using this secondary signal as a luminance modulation input of a cathode ray tube which is scanned in synchronization with the scanning of the electron beam, a scanned image (SEM
Image). As described in JP-A-9-171791, as means for observing a sample with high resolution, boosting for increasing the energy of primary electrons when passing through an objective lens and deceleration electric field between the objective lens and the sample are used. A method called reading, in which the sample is returned to low energy to irradiate the sample, has been proposed.
【０００３】このような方式では、試料から発生した二
次信号電子は対物レンズと試料間の電界で加速されて対
物レンズ上部に引き上げられるため、対物レンズ上部で
二次信号電子を検出することになる。この場合、二次信
号電子は光軸近傍を進行するため、一次電子に影響を与
えずに二次信号電子を検出するには、二次信号電子を光
軸から偏向する必要がある。ウィーンフィルター型の直
交電磁界を対物レンズと偏向コイルの間の光軸上に配置
することで、二次信号電子を光軸から偏向し、一次電子
に悪影響を及ぼさずに効率よく二次信号電子を検出可能
とした。In such a method, secondary signal electrons generated from the sample are accelerated by an electric field between the objective lens and the sample and are lifted to the upper part of the objective lens. Therefore, the secondary signal electrons are detected at the upper part of the objective lens. Become. In this case, since the secondary signal electrons travel near the optical axis, it is necessary to deflect the secondary signal electrons from the optical axis in order to detect the secondary signal electrons without affecting the primary electrons. By arranging a Wien filter type orthogonal electromagnetic field on the optical axis between the objective lens and the deflection coil, secondary signal electrons are deflected from the optical axis, and the secondary signal electrons are efficiently removed without affecting the primary electrons. Can be detected.
【０００４】[0004]
【発明が解決しようとする課題】ところが、上記の直交
電磁界を対物レンズと偏向コイルの間の光軸上に配置す
る従来技術では、光学系が長くなり、装置が大型化する
問題点があった。また、リーターディングやブースティ
ングの採用により、対物レンズ周辺に電界が発生するた
め、対物レンズと偏向コイルの間に検出器などを挿入す
ることが困難になりつつある。However, in the prior art in which the orthogonal electromagnetic field is arranged on the optical axis between the objective lens and the deflecting coil, there is a problem that the optical system becomes longer and the device becomes larger. Was. In addition, since an electric field is generated around the objective lens due to the adoption of reading and boosting, it is becoming difficult to insert a detector or the like between the objective lens and the deflection coil.
【０００５】そこで、本発明の目的は、光学系が短く装
置がコンパクト化できる走査電子顕微鏡を提供すること
にある。Accordingly, an object of the present invention is to provide a scanning electron microscope that has a short optical system and can be made compact.
【０００６】本発明の他の目的は、一次電子線に悪影響
を及ぼさずに二次信号電子を検出できる、高分解能かつ
高感度の観察が可能な走査電子顕微鏡を提供することに
ある。It is another object of the present invention to provide a scanning electron microscope capable of detecting secondary signal electrons without adversely affecting a primary electron beam and enabling observation with high resolution and high sensitivity.
【０００７】本発明の他の目的は、リターディングやブ
ースティング方式に適した高分解能かつコンパクトな走
査電子顕微鏡を提供することにある。Another object of the present invention is to provide a high-resolution and compact scanning electron microscope suitable for retarding and boosting methods.
【０００８】[0008]
【課題を解決するための手段】本発明の特徴は、電子源
から放出された一次電子線を偏向コイルにより試料上で
走査し、上記試料からの二次信号電子を偏向電磁界によ
り光軸外に偏向して検出し、像観察する走査電子顕微鏡
において、上記一次電子線の偏向磁界と上記二次信号電
子の偏向電磁界が空間的に重畳して形成されていること
にある。A feature of the present invention is that a primary electron beam emitted from an electron source is scanned on a sample by a deflection coil, and secondary signal electrons from the sample are off-axis by a deflection electromagnetic field. In a scanning electron microscope for detecting an image by deflecting it and observing an image, a deflecting magnetic field of the primary electron beam and a deflecting electromagnetic field of the secondary signal electron are formed so as to be spatially overlapped.
【０００９】本発明の他の特徴によれば、電子源から放
出された一次電子線を偏向コイルにより試料上で走査
し、上記試料からの二次信号電子を偏向電磁界により光
軸外に偏向して検出し、像観察する走査電子顕微鏡にお
いて、上記一次電子線用偏向コイルの内周部に、上記二
次信号電子の偏向電界を発生する偏向電極を有すること
にある。According to another feature of the present invention, a primary electron beam emitted from an electron source is scanned on a sample by a deflection coil, and secondary signal electrons from the sample are deflected off the optical axis by a deflection electromagnetic field. In a scanning electron microscope for detecting, detecting, and observing an image, a deflection electrode for generating a deflection electric field of the secondary signal electrons is provided on an inner peripheral portion of the deflection coil for the primary electron beam.
【００１０】本発明によれば、一次電子線の偏向磁界と
二次信号電子の偏向電磁界が空間的に重畳して形成され
ているため、走査電子顕微鏡の光学系を短くし、装置を
コンパクト化できる。According to the present invention, since the deflecting magnetic field of the primary electron beam and the deflecting electromagnetic field of the secondary signal electrons are spatially superposed, the optical system of the scanning electron microscope can be shortened and the apparatus can be made compact. Can be
【００１１】また、一次電子線と二次信号電子を空間的
に重畳しても、一次電子に悪影響を及ぼさずに二次信号
電子を光軸から偏向して、検出できるので、高分解能か
つ高感度の観察が可能である。Further, even if the primary electron beam and the secondary signal electrons are spatially superimposed, the secondary signal electrons can be deflected from the optical axis and detected without adversely affecting the primary electrons. Observation of sensitivity is possible.
【００１２】さらに、本発明によれば、偏向コイルの内
周部に偏向電極を挿入するため、特に、リターディング
やブースティング方式のような電子線の加減速領域を含
む高精度の測長ＳＥＭに対して、簡単かつ安価に組み込
むことができる。Further, according to the present invention, since the deflection electrode is inserted into the inner peripheral portion of the deflection coil, a high-precision length measuring SEM including an electron beam acceleration / deceleration region such as a retarding or boosting method is used. Can be easily and inexpensively incorporated.
【００１３】すなわち、一次電子線を偏向する二段の偏
向コイルとウィーンフィルター型の直交電磁界を空間的
に重畳して配置するため、二次信号電子を光軸から偏向
できるウィーンフィルター型の直交電磁界を備えた走査
電子顕微鏡を提供することができる。この種の走査電子
顕微鏡では、対物レンズと試料との間にリーターディン
グやブースティングの電界及び対物レンズ磁界がかけて
あるので、試料から放出された二次信号電子は収束され
ると共に上方に引き出される。二次信号電子が偏向コイ
ル内に入射すると、二次信号電子に対してはウィーンフ
ィルター型の直交電磁界は偏向力が相殺されないため、
光軸から偏向され、光軸周辺に配置された検出器で検出
される。 このように、本発明によれば、リターディン
グやブースティング方式に適した高分解能かつコンパク
トな走査電子顕微鏡を提供することができる。That is, since a two-stage deflection coil for deflecting a primary electron beam and a Wien filter type orthogonal electromagnetic field are spatially superposed and arranged, a Wien filter type orthogonal filter capable of deflecting secondary signal electrons from the optical axis. A scanning electron microscope having an electromagnetic field can be provided. In this type of scanning electron microscope, an electric field for reading and boosting and a magnetic field for the objective lens are applied between the objective lens and the sample, so that the secondary signal electrons emitted from the sample are converged and drawn upward. It is. When the secondary signal electrons enter the deflecting coil, the Wien filter-type orthogonal electromagnetic field does not cancel the deflection force against the secondary signal electrons.
The light is deflected from the optical axis and detected by a detector arranged around the optical axis. As described above, according to the present invention, it is possible to provide a high-resolution and compact scanning electron microscope suitable for the retarding or boosting method.
【００１４】[0014]
【発明の実施の形態】図１、図２により本発明の走査形
電子顕微鏡の一実施例を説明する。図１は本発明の走査
形電子顕微鏡の一実施例の縦断面図面であり、図２は、
図１のＡ−Ａ‘断面を示す図である。陰極１と第一陽極
２に印加される電圧Ｖ１により陰極１（電子銃）から放
射された一次電子線４は、第二陽極３に印加される電圧
Ｖａｃｃによって加速されて後段のレンズ系に進行す
る。この一次電子線４は、対物レンズ６により試料７に
微小スポットとして集束され、二段の偏向コイル８で試
料上を二次元的に走査される。1 and 2, an embodiment of the scanning electron microscope of the present invention will be described. FIG. 1 is a longitudinal sectional view of one embodiment of the scanning electron microscope of the present invention, and FIG.
FIG. 2 is a diagram illustrating a cross section taken along line AA ′ of FIG. 1. The primary electron beam 4 emitted from the cathode 1 (electron gun) by the voltage V1 applied to the cathode 1 and the first anode 2 is accelerated by the voltage Vacc applied to the second anode 3, and proceeds to the subsequent lens system. I do. The primary electron beam 4 is focused as a minute spot on the sample 7 by the objective lens 6 and is two-dimensionally scanned over the sample by the two-stage deflection coil 8.
【００１５】試料７と対物レンズ６の間には、リターデ
ィング電圧Ｖr及びブースティング電圧Ｖbにより二次信
号電子９を電子銃１側に引き出す電界が生成されてい
る。引き出された二次信号電子９が偏向コイル８内に入
射すると、ウィーンフィルター型の直交電磁界は二次信
号電子９に対しては偏向力が相殺されないため、光軸外
に偏向され、光軸周辺に配置されたマイクロチャンネル
プレート１１で検出される。An electric field for extracting the secondary signal electrons 9 to the electron gun 1 is generated between the sample 7 and the objective lens 6 by the retarding voltage Vr and the boosting voltage Vb. When the extracted secondary signal electrons 9 enter the deflection coil 8, the Wien filter type orthogonal electromagnetic field is deflected off the optical axis because the deflection force does not cancel the secondary signal electrons 9, and is deflected off the optical axis. It is detected by the microchannel plate 11 arranged on the periphery.
【００１６】偏向コイル８の内周部には、一対の半円弧
状の偏向電極１０（１０ａ，１０ｂ）が挿入されてい
る。A pair of semicircular deflection electrodes 10 (10a, 10b) are inserted into the inner periphery of the deflection coil 8.
【００１７】偏向コイル８内に重畳する直交電磁界（Ｅ
×Ｂ）の電界Ｅ及び磁界Ｂは次のように決定する。ま
ず、一次電子線４に対して直交電磁界（Ｅ×Ｂ）の偏向
力が相殺する条件は、次式（１）で表わされる。The orthogonal electromagnetic field (E
× B) The electric field E and the magnetic field B are determined as follows. First, the condition that the deflection force of the orthogonal electromagnetic field (E × B) cancels the primary electron beam 4 is expressed by the following equation (1).
【００１８】 Ｅ＋√(２ｅ／ｍ Ｖacc)Ｂ＝０ ……（１） 但し、ｅ／ｍは電子の比電荷である。E + √ (2e / m Vacc) B = 0 (1) where e / m is the specific charge of the electron.
【００１９】偏向電極１０の長さをＤとすると、二次信
号電子９の偏向角度θはリターディング電圧Ｖrに依存
して０．５ＥＤ／Ｖacc〜ＥＤ／Ｖaccの範囲で変化す
る。偏向後の二次電子４がマイクロチャンネルプレート
の有感領域に入射するように偏向電界Ｅを決定する。こ
の際、極低倍率での観察を除けば、一次電子線４の偏向
磁界は直交電磁界（Ｅ×Ｂ）の磁界に比べて１桁以上小
さいため、二次信号電子９の偏向角度θへの影響は無視
して良い。Assuming that the length of the deflection electrode 10 is D, the deflection angle θ of the secondary signal electrons 9 changes in the range of 0.5 ED / Vacc to ED / Vacc depending on the retarding voltage Vr. The deflection electric field E is determined so that the secondary electrons 4 after the deflection enter the sensitive region of the microchannel plate. At this time, except for observation at an extremely low magnification, the deflection magnetic field of the primary electron beam 4 is smaller than the magnetic field of the orthogonal electromagnetic field (E × B) by one digit or more. The effect of can be ignored.
【００２０】直交電磁界を偏向コイル８に重畳する方法
は、一次電子線４の偏向コイル８内周部に挿入された一
対の偏向電極１０に電圧Ｖｅを印加することによって行
なう。また、磁界については、偏向コイル電源１２から
一次電子線４の偏向電流Ｉ１と二次信号電子９の偏向電
流Ｉ２を合計した電流Ｉを供給することによって実現す
る。The method of superimposing the orthogonal electromagnetic field on the deflection coil 8 is performed by applying a voltage Ve to a pair of deflection electrodes 10 inserted into the inner periphery of the deflection coil 8 of the primary electron beam 4. The magnetic field is realized by supplying the deflection coil power supply 12 with a current I which is the sum of the deflection current I1 of the primary electron beam 4 and the deflection current I2 of the secondary signal electrons 9.
【００２１】この電流Ｉは、次のようにして決定され
る。まず偏向電流Ｉ１は、試料の倍率で決まる値であ
る。マイクロチャンネルプレート１１における偏向量を
ΔＳとすると、この偏向量ΔＳに必要な偏向電界Ｅの強
度がきまる。そして、この偏向電界Ｅを得るために、一
対の偏向電極１０に印加する電圧Ｖｅが決まる。次に、
偏向電界Ｅによる偏向力を相殺するために必要な磁界Ｂ
を、式（１）によって求める。そして、この磁界Ｂを発
生させるに必要な偏向電流Ｉ２を求める。このようにし
て決定された、一次電子線４の偏向電流Ｉ１と二次信号
電子９の偏向電流Ｉ２を合計した電流Ｉが偏向コイル電
源１２から偏向コイル８に供給される。This current I is determined as follows. First, the deflection current I1 is a value determined by the magnification of the sample. Assuming that the amount of deflection in the microchannel plate 11 is ΔS, the intensity of the deflection electric field E required for the amount of deflection ΔS is determined. Then, in order to obtain the deflection electric field E, the voltage Ve applied to the pair of deflection electrodes 10 is determined. next,
Magnetic field B required to cancel the deflection force due to deflection electric field E
Is obtained by Expression (1). Then, a deflection current I2 required to generate the magnetic field B is obtained. The current I obtained by summing the deflection current I1 of the primary electron beam 4 and the deflection current I2 of the secondary signal electrons 9 determined in this way is supplied from the deflection coil power supply 12 to the deflection coil 8.
【００２２】本実施例では、一次電子線４と二次信号電
子９の偏向のために、従来からある偏向コイル８を利用
し、偏向コイルの内周部に偏向電極を挿入するため、偏
向コイル部をコンパクトかつ安価に作成できる。特に、
リターディングやブースティング方式のような電子線の
加減速領域を含む高精度の測長ＳＥＭに対して、簡単か
つ安価に組み込むことができる。In this embodiment, a conventional deflection coil 8 is used to deflect the primary electron beam 4 and the secondary signal electrons 9 and a deflection electrode is inserted into the inner periphery of the deflection coil. The unit can be made compact and inexpensive. Especially,
It can be easily and inexpensively incorporated into a high-precision length measuring SEM including an electron beam acceleration / deceleration region such as a retarding or boosting method.
【００２３】図３には本発明の走査電子顕微鏡の偏向コ
イル部の構造の第２の実施例の縦断面を示し、図４には
図３のＢ−Ｂ断面図を示している。この実施例では、一
次電子線の偏向コイル８の外周部に二次信号電子９の偏
向コイル８aを設置する。一次電子線の偏向コイル８の
内側には、誘導電流の影響をなくするための導電性パイ
プ２２が配置され、この導電性パイプ２２の内周面に碍
子２０を介して一対の偏向電極１０が保持されている。
偏向コイル８には従来通り一次電子線４の偏向電流を電
源１２から供給し、偏向コイル８aに二次信号電子９を
偏向するための電流を電源１３から供給する。偏向コイ
ル８は光軸方向に二段かつ光軸周りに２対設置し、一次
電子線４を二次元的に走査する。偏向コイル８aに関し
ても偏向コイル８と相似的に二段かつ２対設置し、電界
Ｅと磁界Ｂが正確に直交するための調整を可能としてい
る。FIG. 3 shows a longitudinal section of a second embodiment of the structure of the deflection coil portion of the scanning electron microscope of the present invention, and FIG. 4 shows a sectional view taken along line BB of FIG. In this embodiment, a deflection coil 8a for the secondary signal electrons 9 is provided on the outer periphery of the deflection coil 8 for the primary electron beam. A conductive pipe 22 for eliminating the influence of the induced current is arranged inside the deflection coil 8 for the primary electron beam, and a pair of deflection electrodes 10 is provided on the inner peripheral surface of the conductive pipe 22 via an insulator 20. Is held.
A deflection current of the primary electron beam 4 is supplied from a power supply 12 to the deflection coil 8 as in the conventional art, and a current for deflecting the secondary signal electrons 9 is supplied from a power supply 13 to the deflection coil 8a. The deflection coils 8 are provided in two stages in the optical axis direction and two pairs around the optical axis, and scan the primary electron beam 4 two-dimensionally. The deflection coil 8a is also provided in two stages and two pairs in a similar manner to the deflection coil 8, so that the electric field E and the magnetic field B can be adjusted so as to be orthogonal at right angles.
【００２４】本実施例では、従来からある偏向コイル８
に追加して偏向コイル８aを巻くだけで偏向コイル部が
作成できる。また、コイル電流をそれぞれ独立に供給で
きるので電源も従来品をそのまま利用できる。なお、偏
向コイル８と８aの内外の配置を逆転した構成でもよ
い。In this embodiment, a conventional deflection coil 8 is used.
In addition to the above, the deflection coil section can be created only by winding the deflection coil 8a. In addition, since the coil currents can be supplied independently of each other, a conventional power supply can be used as it is. Note that a configuration in which the arrangement of the deflection coils 8 and 8a inside and outside is reversed may be adopted.
【００２５】図５には本発明の走査電子顕微鏡の偏向コ
イル部の構造の第３の実施例を示している。第２の実施
例との相違点は、偏向コイル８bが一段、２対となって
いる点である。偏向コイル８とは独立に偏向コイル８b
を作成する場合には、部品点数が少なく安価となる。FIG. 5 shows a third embodiment of the structure of the deflection coil unit of the scanning electron microscope according to the present invention. The difference from the second embodiment is that the deflection coils 8b are arranged in one step and two pairs. Deflection coil 8b independent of deflection coil 8
In the case of creating the, the number of parts is small and the cost is low.
【００２６】図６には本発明の走査電子顕微鏡の偏向コ
イル部の構造の第４の実施例を示している。偏向コイル
８cは、内周部と外周部に複数個に分離している。直交
電磁界の一次電子線４への影響を最小化するためには、
光軸に沿って電界Ｅと磁界Ｂの分布形状が一致する必要
がある。本実施例のように偏向コイル８cを内周部と外
周部に分割した構成とし、電源１３からそれぞれの偏向
コイルに電流を供給することで磁界Ｂの分布形状を調整
可能となる。従って、本実施例は、特に高分解能化に有
効である。FIG. 6 shows a fourth embodiment of the structure of the deflection coil unit of the scanning electron microscope according to the present invention. The deflection coil 8c is divided into a plurality of inner and outer peripheral portions. To minimize the influence of the orthogonal electromagnetic field on the primary electron beam 4,
The distribution shapes of the electric field E and the magnetic field B need to match along the optical axis. As in the present embodiment, the deflection coil 8c is divided into an inner peripheral portion and an outer peripheral portion, and the distribution of the magnetic field B can be adjusted by supplying a current from the power supply 13 to each of the deflection coils. Therefore, the present embodiment is particularly effective for increasing the resolution.
【００２７】図７には本発明の走査電子顕微鏡の偏向コ
イル部の構造の第５の実施例を示している。偏向コイル
８dは、二段偏向コイル８の下段のみに配置している。
偏向電極１０aも同様に下段のみに挿入した構成とする
ことで、二次信号電子の偏向量を大きなものにでき、か
つ、コンパクトな構造を実現している。FIG. 7 shows a fifth embodiment of the structure of the deflection coil section of the scanning electron microscope according to the present invention. The deflection coil 8d is arranged only at the lower stage of the two-stage deflection coil 8.
Similarly, by arranging the deflection electrode 10a only in the lower stage, the deflection amount of the secondary signal electrons can be increased and a compact structure is realized.
【００２８】図８には本発明の走査電子顕微鏡の偏向電
極として、八極偏向器を採用した実施例を示している。
電源１４から八極の電極１０ｂに独立に電圧を印加する
ことで、偏向電界の方向を任意に制御できる。ここで、
電極間の距離をＬとし、図に示したように電源１４から
各電極に、例えば直流電圧＋Ｖ〜０〜−Ｖを印加する
と、直流電圧と電界Ｅの関係は次のようになる。 Ｅｘ≒２Ｖ／L， Ｅｙ＝０FIG. 8 shows an embodiment in which an octupole deflector is employed as the deflection electrode of the scanning electron microscope of the present invention.
The direction of the deflection electric field can be arbitrarily controlled by independently applying a voltage from the power source 14 to the octupole electrode 10b. here,
When the distance between the electrodes is L and a DC voltage of + V to 0 to -V is applied from the power supply 14 to each electrode as shown in the drawing, the relationship between the DC voltage and the electric field E is as follows. Ex ≒ 2V / L, Ey = 0
【００２９】これにより、偏向電極の位置ずれ等による
偏向電界の分布形状のずれを調整することができる。従
って、本実施例では、直交電磁界の磁界Ｂの方向は固定
とすることができる。Thus, it is possible to adjust the deviation of the distribution shape of the deflection electric field due to the displacement of the deflection electrode and the like. Therefore, in the present embodiment, the direction of the magnetic field B of the orthogonal electromagnetic field can be fixed.
【００３０】図９には本発明の走査電子顕微鏡の二次電
子検出器として、マイクロチャンネルプレートに代えて
直交電磁場（Ｅ×Ｂ）二次電子検出器を採用した例であ
る。光軸から偏向された二次信号電子９は、変換電極１
１ｄに衝突し、新たに二次電子９ａを生成する。変換電
極１１ｄの前面には、偏向電極１１ｂ、１１ｃによる偏
向電界が生成されており、二次電子９ａは二次電子検出
器１１ａに取り込まれる。なお、図中には明記していな
いが、偏向電極１１ｂ、１１ｃによる偏向電界が一次電
子線４に影響しないように直交する磁界が印加してあ
る。FIG. 9 shows an example in which an orthogonal electromagnetic field (E × B) secondary electron detector is employed in place of the microchannel plate as the secondary electron detector of the scanning electron microscope of the present invention. The secondary signal electrons 9 deflected from the optical axis are transmitted to the conversion electrode 1.
Collision with 1d generates a new secondary electron 9a. On the front surface of the conversion electrode 11d, a deflection electric field is generated by the deflection electrodes 11b and 11c, and the secondary electrons 9a are taken into the secondary electron detector 11a. Although not explicitly shown in the figure, orthogonal magnetic fields are applied so that the deflection electric field generated by the deflection electrodes 11b and 11c does not affect the primary electron beam 4.
【００３１】[0031]
【発明の効果】本発明の走査電子顕微鏡は、一次電子線
と二次信号電子を空間的に重畳した一つの領域で偏向し
ているので、光学系が短く装置がコンパクト化できる。
また、一次電子線と二次信号電子を空間的に重畳してい
ても、一次電子に悪影響を及ぼさずに二次信号電子を光
軸から偏向して、検出できるので、高分解能かつ高感度
の観察が可能である。According to the scanning electron microscope of the present invention, since the primary electron beam and the secondary signal electrons are deflected in one spatially superposed area, the optical system is short and the apparatus can be made compact.
Also, even if the primary electron beam and the secondary signal electrons are spatially superimposed, the secondary signal electrons can be deflected from the optical axis and detected without affecting the primary electrons, so that high resolution and high sensitivity can be achieved. Observation is possible.
【００３２】さらに、偏向コイルの内周部に偏向電極を
挿入するため、特に、リターディングやブースティング
方式のような電子線の加減速領域を含む高精度の測長Ｓ
ＥＭに対して、簡単かつ安価に組み込むことができる。Further, since a deflection electrode is inserted into the inner peripheral portion of the deflection coil, a high-precision length measurement S including an electron beam acceleration / deceleration area such as a retarding or boosting method is used.
It can be easily and inexpensively incorporated into EM.
【図１】本発明の一実施例になる走査電子顕微鏡の縦断
面図。FIG. 1 is a longitudinal sectional view of a scanning electron microscope according to one embodiment of the present invention.
【図２】図１の走査電子顕微鏡の偏向コイル部を示すＡ
−Ａ'断面図。FIG. 2A shows a deflection coil unit of the scanning electron microscope of FIG.
-A 'sectional drawing.
【図３】本発明の第２の実施例となる走査電子顕微鏡の
偏向コイル部の縦断面図。FIG. 3 is a longitudinal sectional view of a deflection coil unit of a scanning electron microscope according to a second embodiment of the present invention.
【図４】図３の実施例のＢ−Ｂ‘断面図。FIG. 4 is a sectional view taken along the line BB of the embodiment of FIG. 3;
【図５】本発明の第３の実施例となる偏向コイル部の縦
断面図。FIG. 5 is a longitudinal sectional view of a deflection coil unit according to a third embodiment of the present invention.
【図６】本発明の第４の実施例となる偏向コイル部の縦
断面図。FIG. 6 is a longitudinal sectional view of a deflection coil unit according to a fourth embodiment of the present invention.
【図７】本発明の第５の実施例となる偏向コイル部の縦
断面図。FIG. 7 is a longitudinal sectional view of a deflection coil unit according to a fifth embodiment of the present invention.
【図８】本発明の第６の実施例となる偏向電極の縦断面
図。FIG. 8 is a longitudinal sectional view of a deflection electrode according to a sixth embodiment of the present invention.
【図９】本発明の第７の実施例になる走査電子顕微鏡の
縦断面図。FIG. 9 is a longitudinal sectional view of a scanning electron microscope according to a seventh embodiment of the present invention.
１…陰極、２…第一陽極、３…第二陽極、４…一次電子
線、５…集束レンズ、６…対物レンズ、７…試料、８、
８ａ、８ｂ、８ｃ、８ｄ…偏向コイル、９…二次信号電
子、１０、１０ａ、１０ｂ…偏向電極、１１…マイクロ
チャンネルプレート、１１ａ、１１ｂ、１１ｃ、１１ｄ
…ＥＸＢ二次電子検出器、１２、１３…偏向コイル電
源、１４…偏向電極電源、２０…碍子、２１…導電性パ
イプDESCRIPTION OF SYMBOLS 1 ... Cathode, 2 ... First anode, 3 ... Second anode, 4 ... Primary electron beam, 5 ... Focusing lens, 6 ... Objective lens, 7 ... Sample, 8,
8a, 8b, 8c, 8d: deflection coil, 9: secondary signal electron, 10, 10a, 10b: deflection electrode, 11: microchannel plate, 11a, 11b, 11c, 11d
... EXB secondary electron detector, 12, 13 ... deflection coil power supply, 14 ... deflection electrode power supply, 20 ... insulator, 21 ... conductive pipe
Claims (14)
イルにより試料上で走査し、上記試料からの二次信号電
子を偏向電磁界により光軸外に偏向して検出し、像観察
する走査電子顕微鏡において、上記一次電子線の偏向磁
界と上記二次信号電子の偏向電磁界が空間的に重畳して
形成されていることを特徴とする走査電子顕微鏡。A primary electron beam emitted from an electron source is scanned on a sample by a deflection coil, and secondary signal electrons from the sample are deflected off the optical axis by a deflection electromagnetic field, detected, and observed. In the scanning electron microscope, a deflection magnetic field of the primary electron beam and a deflection electromagnetic field of the secondary signal electron are formed so as to be spatially overlapped with each other.
イルにより試料上で走査し、上記試料からの二次信号電
子を偏向電磁界により光軸外に偏向して検出し、像観察
する走査電子顕微鏡において、上記一次電子線用偏向コ
イルの内周部に、上記二次信号電子の偏向電界を発生す
る偏向電極を有することを特徴とする走査電子顕微鏡。2. A primary electron beam emitted from an electron source is scanned on a sample by a deflection coil, and secondary signal electrons from the sample are deflected off the optical axis by a deflection electromagnetic field, detected, and observed. A scanning electron microscope, wherein a deflection electrode for generating a deflection electric field of the secondary signal electrons is provided in an inner peripheral portion of the primary electron beam deflection coil.
イルにより試料上で走査し、上記試料からの二次信号電
子を偏向電磁界により光軸外に偏向して検出し、像観察
する走査電子顕微鏡であって、対物レンズと上記試料の
間に、該対物レンズを通過する際の上記一次電子線のエ
ネルギーを高くするブースティング及び上記対物レンズ
と上記試料間の減速電界で低エネルギーに戻して上記試
料に照射するリーターディングを備えたものにおいて、
上記一次電子線の偏向磁界と上記二次信号電子の偏向電
磁界が空間的に重畳して形成されていることを特徴とす
る走査電子顕微鏡。3. A primary electron beam emitted from an electron source is scanned on a sample by a deflection coil, and secondary signal electrons from the sample are deflected off the optical axis by a deflection electromagnetic field, detected, and observed. A scanning electron microscope, comprising: between an objective lens and the sample, low energy due to boosting that increases the energy of the primary electron beam when passing through the objective lens and deceleration electric field between the objective lens and the sample. In the one provided with a reading for returning and irradiating the sample,
A scanning electron microscope, wherein a deflection magnetic field of the primary electron beam and a deflection electromagnetic field of the secondary signal electrons are formed so as to overlap spatially.
査電子顕微鏡において、上記二次信号電子に対する偏向
電界と偏向磁界が、上記一次電子線に対しては相殺して
偏向力を生じない値に設定されていることを特徴とする
走査電子顕微鏡。4. The scanning electron microscope according to claim 1, wherein the deflection electric field and the deflection magnetic field for the secondary signal electrons cancel out on the primary electron beam to generate a deflection force. A scanning electron microscope characterized in that the value is set to no value.
査電子顕微鏡において、上記一次電子線の偏向コイル
に、該一次電子線の偏向用電流と二次信号電子の偏向用
電流を重畳した電流を流すことを特徴とする走査電子顕
微鏡。5. The scanning electron microscope according to claim 1, wherein a deflection current for the primary electron beam and a deflection current for the secondary signal electrons are superimposed on the deflection coil for the primary electron beam. Scanning electron microscope characterized by passing a controlled current.
査電子顕微鏡において、上記一次電子線の偏向コイルの
内周部あるいは外周部に、上記二次信号電子の偏向コイ
ルを設置したことを特徴とする走査電子顕微鏡。6. The scanning electron microscope according to claim 1, wherein the deflection coil for the secondary signal electrons is provided on the inner circumference or the outer circumference of the deflection coil for the primary electron beam. A scanning electron microscope characterized by the above.
て、上記二次信号電子の偏向コイルを、上記一次電子線
の偏向コイルと相似的に二段に分離して設置したことを
特徴とする走査電子顕微鏡。7. The scanning electron microscope according to claim 6, wherein the deflection coil for the secondary signal electrons is provided in two stages similar to the deflection coil for the primary electron beam. Scanning electron microscope.
て、上記二次信号電子の偏向コイルは、上記一次電子線
の二段の偏向コイルを包括して設置した一段の偏向コイ
ルであることを特徴とする走査電子顕微鏡。8. The scanning electron microscope according to claim 6, wherein the deflection coil for the secondary signal electrons is a single-stage deflection coil including the two-stage deflection coils for the primary electron beam. Scanning electron microscope.
て、上記二次信号電子の偏向コイルは、内周部と外周部
に複数個に分離して構成したことを特徴とする走査電子
顕微鏡。9. The scanning electron microscope according to claim 6, wherein said secondary signal electron deflection coil is divided into a plurality of inner and outer peripheral portions.
走査電子顕微鏡において、上記一次電子線の二段偏向コ
イルの下段または上段のみに重畳して、上記二次信号電
子の偏向コイル及び偏向電極を設置したことを特徴とす
る走査電子顕微鏡。10. The scanning electron microscope according to claim 1, wherein the primary electron beam is superimposed on only a lower or upper stage of a two-stage deflection coil, and the secondary signal electron deflection coil and A scanning electron microscope comprising a deflection electrode.
て、上記二次信号電子の偏向電界を発生する偏向電極は
８極子偏向器であることを特徴とする走査電子顕微鏡。11. The scanning electron microscope according to claim 2, wherein the deflection electrode for generating the deflection electric field of the secondary signal electrons is an octupole deflector.
走査電子顕微鏡において、上記一次電子線および二次信
号電子の偏向器より上記電子銃側かつ光軸の周囲にマイ
クロチャンネルプレート形の検出器を配置したことを特
徴とする走査電子顕微鏡。12. The scanning electron microscope according to claim 1, wherein a micro-channel plate type is provided on the electron gun side and around the optical axis with respect to the deflector for the primary electron beam and the secondary signal electron. A scanning electron microscope comprising a detector.
走査電子顕微鏡において、上記一次電子線４の偏向コイ
ル８が導電性円筒の外周部に保持され、該導電性円筒の
内周部に上記一対の偏向電極が保持されていることを特
徴とする走査電子顕微鏡。13. The scanning electron microscope according to claim 1, wherein the deflection coil 8 of the primary electron beam 4 is held on the outer periphery of the conductive cylinder, and the inner periphery of the conductive cylinder. Wherein the pair of deflection electrodes is held.
走査電子顕微鏡において、上記一次電子線および二次信
号電子の偏向器より上記電子銃側かつ光軸の周囲に、上
記二次信号電子を二次電子に変換する電極と検出器およ
び上記二次子電子を検出器側に偏向する直交電磁界を発
生するコイル及び電極を配置したことを特徴とする走査
電子顕微鏡。14. The scanning electron microscope according to claim 1, wherein the secondary signal is provided on the electron gun side and around the optical axis from the deflector for the primary electron beam and the secondary signal electron. A scanning electron microscope comprising an electrode and a detector for converting electrons into secondary electrons, and a coil and an electrode for generating an orthogonal electromagnetic field for deflecting the secondary electrons toward the detector.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32631197A JP3356270B2 (en) | 1997-11-27 | 1997-11-27 | Scanning electron microscope |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32631197A JP3356270B2 (en) | 1997-11-27 | 1997-11-27 | Scanning electron microscope |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH11162384A true JPH11162384A (en) | 1999-06-18 |
| JP3356270B2 JP3356270B2 (en) | 2002-12-16 |
Family
ID=18186354
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP32631197A Expired - Fee Related JP3356270B2 (en) | 1997-11-27 | 1997-11-27 | Scanning electron microscope |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3356270B2 (en) |
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