JPH11154756A - Electronic component, its manufacture, and capacitance type sensor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent electrical short-circuiting by providing a taper part at the edge part of a conductor film when alternately laminating an insulation film and the conductor film on an insulation substrate. SOLUTION: A diaphragm part 11 is formed on a silicon substrate 10 of a sensor chip, and a fixed electrode 21, a fixed electrode leading pattern 22, and a movable electrode pad 23 are formed on a glass substrate 20 that is an insulation substrate. Then, an insulation film 25 and a conductor film 24 are laminated on the fixed electrode leading pattern 22, and a taper part is provided at the edge part of the fixed electrode leading pattern 22, thus positively insulating and covering the edge part of the fixed electrode leading pattern 22 by the insulation film 25. A capacitance-type sensor obtained in this manner does not cause generation of electrical short-circuiting and hence is highly reliable. Also, a quality rate in a manufacturing process can be drastically improved. Also, by manufacturing a thin-film filter or the like by the method, similar effect can be obtained.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electronic component having a laminated structure using a thin film, a method of manufacturing the same, and a capacitance sensor.

[0002]

2. Description of the Related Art Electronic components having a laminated structure using a thin film include a thin film filter, a thin film inductor, a thin film capacitor, and a capacitance type sensor. A conventional technique according to the present invention will be described using a capacitance type pressure sensor (pressure sensor) which is a capacitance type sensor as an example.

FIG. 3 shows a conventional pressure sensor. FIG.
FIG. 3A is a perspective view of the pressure sensor with a cap removed to expose the inside, and FIG. 3B is a cross-sectional view of the pressure sensor.

FIG. 4 is a view showing the structure of the sensor chip of the pressure sensor shown in FIG. 3, and FIG. 4 (a) is an exploded perspective view of the sensor chip, and FIGS. 4 (b) and 4 (c). 4) are AA sectional view, BB sectional view, and FIG.
FIG. 4D is an enlarged explanatory view of a portion D in FIG.

FIG. 4A shows a sensor chip of the pressure sensor.
As shown in FIG. 1, a diaphragm portion 11 functioning as a movable electrode that is deformed in response to pressure is formed on a silicon substrate 10, and a fixed electrode 21 is formed on a glass substrate 20 that is an insulating substrate. The silicon substrate 10 and the glass substrate 20 are partially heated at a temperature of 3 so that the fixed electrode 21 and the diaphragm 11 as the movable electrode face each other.
The anodic bonding is performed at 50 ° C. to 450 ° C., whereby the cavity 12
[FIG. 3B] is formed.

The sensor chip 30 composed of the silicon substrate 10 and the glass substrate 20 is provided with a fixed electrode lead-out lateral hole 13 through which the fixed electrode 21 formed by the lift-off method or the etching method is connected to the fixed electrode. It is electrically drawn out of the cavity portion 12 through the fixed electrode extraction pattern 22 formed at the same time by the same method. The diaphragm portion 11 includes a movable electrode pad 23 provided on a glass substrate 20 via the silicon substrate 10.
And electrically extracted outside the cavity 12 [FIG. 4 (a)].

Further, the diaphragm 11 and the fixed electrode 2
As shown in FIG. 4 (a), in order to suppress the parasitic capacitance that changes due to the detected pressure that wraps around from the peripheral portion 1 and the parasitic capacitance that does not change due to the detected pressure generated by the fixed electrode extraction pattern 22 and the like. The conductor film 24 is provided so as to cover the periphery of the electrode 21, the fixed electrode lead pattern 22, and the fixed electrode lead pattern 22.

Further, as shown in FIGS. 4 (b) and 4 (c), in order to electrically insulate the fixed electrode lead pattern 22 and the conductive film 24, the fixed electrode lead pattern 22 and the conductive film 2
4, an insulating film 25 is formed on the fixed electrode 21 and on the entire lower surface of the conductor film 24.

Then, as shown in FIG. 3, the sensor chip 30 is bonded on a pedestal 40 as a base member.
The pedestal 40 is provided with lead terminals 44, 45, 46, and the lead terminals 44, 45, 46 and the glass substrate 2.
, Fixed electrode 21 (via fixed electrode pattern 22), movable electrode pad 23, and conductive film 24
Are electrically connected by lead wires 33, 34, 35.

Atmospheric pressure introducing holes 31, 43 are formed in the glass substrate 20 and the pedestal 40, respectively, and these two atmospheric pressure introducing holes 31, 43 are connected. Cavity part 12 and area 4 inside cap outside sensor chip
7 is sealed with a sealant 32 to draw out the fixed electrode lead-out lateral hole 13. Then, the pedestal 40 and the cap 41 as a cover member provided with the measured pressure introduction hole 42 are sealed by a hermetic seal, and the pressure sensor is completed.

[0011]

As in the case of a capacitance-type sensor described using a conventional pressure sensor as an example, a fixed electrode, which is an electrode pattern on an insulating substrate (glass substrate), and a fixed electrode lead-out pattern are usually lifted off. In the case of a so-called metal electrode structure formed by the etching method or the etching method, as shown in FIG.
0, or the burrs are formed near the surface, and an insulating film 25 is formed thereon.
And an insulating film 25 at the end of the fixed electrode extraction pattern 22.
In some cases, incomplete coverage may occur.

As a result, an electrical short may occur between the fixed electrode lead pattern or the fixed electrode and the conductive film. The electric short-circuit occurs more frequently in the heat application step at the time of anodic bonding of the silicon substrate and the insulating substrate after lamination of the respective films, which has the disadvantage that the function of the pressure sensor is impaired and the yield of the sensor chip is reduced. Was.

SUMMARY OF THE INVENTION It is an object of the present invention to provide an electronic component which does not cause an electrical short, that is, has high reliability and a high yield rate in a manufacturing process, a method of manufacturing the same, and a capacitance sensor. It is in.

[0014]

SUMMARY OF THE INVENTION The present invention is an electronic component comprising an insulating substrate and an insulating film alternately laminated on an insulating substrate, wherein the electronic component has a tapered portion at an end of the conductive film. .

Further, according to the present invention, the angle (reverse) of the angle which becomes the angle of the tapered portion provided at the end of the conductive film and the insulating film at the end of the masking pattern for forming the conductive film and the insulating film.
The method of manufacturing an electronic component according to the above, wherein the electronic component has a tapered portion at an end of the conductive film with a taper.

Further, the present invention has a movable electrode formed on a silicon substrate, and a fixed electrode formed on an insulating substrate and electrically extracted to the outside by a fixed electrode extraction putter. A fixed electrode lead pattern is covered with a conductor film for suppressing generation of parasitic capacitance via an insulating film, and the fixed electrode and the movable electrode are configured to face each other. Electrodes and
An electrostatic capacitance type sensor having a tapered portion at an end of the fixed electrode extraction pattern.

[0017]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Among electronic components having a laminated structure using a thin film (such as a thin film filter, a thin film inductor, a thin film capacitor, and a capacitance type sensor), a capacitance type sensor is used. An embodiment of the present invention will be described with reference to the drawings, taking a pressure sensor (pressure sensor) as an example.

Since the configuration of the pressure sensor of the present invention is the same as that of the prior art, the description is omitted, and only the sensor chip which is the point of the present invention will be described.

FIG. 1 is a view showing the structure of a sensor chip of a pressure sensor according to the present invention. FIG. 1 (a) is an exploded perspective view, and FIGS. 1 (b) and 1 (c) are figures. 1 (a) is a cross-sectional view taken along the line AA and FIG.
It is explanatory drawing which expanded the D section of (b).

As shown in FIG. 1A, a diaphragm portion 11 is formed on a silicon substrate 10 of a sensor chip, and a fixed electrode 21 is formed on a glass substrate 20 which is an insulating substrate.
, Fixed electrode extraction pattern 22 and movable electrode pad 2
3 are formed.

1 (b), 1 (c) and 1
As shown in (d), an insulating film 25 and a conductor film 24 are laminated on the fixed electrode lead pattern 22, and a tapered portion is provided at an end of the fixed electrode lead pattern 22.
Thus, the end of the fixed electrode lead-out pattern 22 is surely insulated and covered with the insulating film 25.

FIG. 2 shows a process of forming the fixed electrode lead-out pattern 22 (or the fixed electrode 21) on the glass substrate. FIG. 2 shows a method of forming the fixed electrode 21 and the fixed electrode lead-out pattern 22 by using the lift-off method. A pattern for forming the fixed electrode 21 and the fixed electrode lead-out pattern 22 was patterned on the glass substrate 20 with a photoresist 26.

At this time, as shown in FIG. 2A, a positive type photoresist corresponding to the image inversion is used, the exposure amount and the development time are controlled, and the end of the photoresist pattern 26 which is a masking pattern is attached to the end. An (inverted) taper of an angle serving as a capture angle of a taper portion provided at an end portion of the film and the insulating film was provided.

Next, a fixed electrode 21 and a fixed electrode lead-out pattern 22 were formed by sputtering or vapor deposition [FIG.
(B)]. Next, the resist is removed, and the fixed electrode 2 is removed.
1. A fixed electrode lead-out pattern 22 was formed [FIG.
(C)]. In the above-described process, the cross-sectional shape of the resist was made to be an inversely tapered shape, so that the fixed electrode 21 and the end of the fixed electrode lead-out pattern 22 were provided with burrs-free tapered portions.

The capacitance type sensor of the present invention obtained as described above has no electrical short-circuit, ie, has high reliability, and has a greatly improved non-defective rate in the manufacturing process (97%). ).

Further, according to the present invention, when a thin film filter, a thin film inductor, and a thin film capacitor, which are electronic components having a laminated structure using a thin film, are manufactured, similar effects are obtained. Further, even if the present invention is applied to a capacitance type acceleration sensor which is a capacitance type sensor, the effect is not changed in principle.

[0027]

According to the present invention, it is possible to obtain an electronic component having a high non-defective product rate without causing an electrical short, a method of manufacturing the same, and a capacitance sensor.

[Brief description of the drawings]

FIG. 1 is a view showing the structure of a sensor chip of a pressure sensor according to the present invention. FIG. 1 (a) is an exploded perspective view, FIG. 1 (b), FIG.
(C) is a cross-sectional view taken along line AA of FIG.
FIG. 1D is an enlarged explanatory view of a portion D in FIG. 1B.

FIG. 2 is an explanatory view showing a process for producing a fixed electrode lead pattern (fixed electrode) on a glass substrate. FIG. 2 (a), FIG.
2 (b) and FIG. 2 (c) show the process order.

3A and 3B are views showing a pressure sensor, FIG. 3A is a perspective view of the pressure sensor, and FIG. 3B is a cross-sectional view of the pressure sensor.

FIG. 4 is a view showing a structure of a sensor chip of the pressure sensor;
FIG. 4A is an exploded perspective view of the sensor chip, and FIG.
4 (b) and FIG. 4 (c) are AA cross-sectional view and BB cross-sectional view of FIG. 4 (a), respectively, and FIG. 4 (d) is an enlarged explanatory view of a D part of FIG. 4 (b). .

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 10 Silicon substrate 11 Diaphragm part (movable electrode) 12 Cavity part 13 (For extraction of fixed electrode) Side hole 20 Glass substrate 21 Fixed electrode 22 Fixed electrode extraction pattern 23 Movable electrode pad 24 Conductive film 25 Insulating film 26 (For lift-off) Photoresist Pattern 30 Sensor chip 31 Atmospheric pressure introducing hole 32 Sealant 33, 34, 35 Lead wire 40 Pedestal 41 Cap 42 Measured pressure introducing hole 43 Atmospheric pressure introducing hole 44, 45, 46 Lead terminal 47 Area in gap

Claims (3)

[Claims] An electronic component comprising an insulating substrate and an insulating film alternately laminated on an insulating substrate, wherein the electronic component has a tapered portion at an end of the conductive film. 2. An end portion of a masking pattern for forming a conductive film and an insulating film is tapered at an angle serving as an angle of capture of a tapered portion provided at an end portion of the conductive film and the insulating film. 2. The device according to claim 1, further comprising a tapered portion.
A method for producing the electronic component described in the above. 3. A movable electrode formed on a silicon substrate,
A fixed electrode formed on an insulating substrate and electrically extracted to the outside by a fixed electrode lead pattern, wherein the fixed electrode and the fixed electrode lead pattern suppress generation of parasitic capacitance via an insulating film Wherein the fixed electrode and the movable electrode are opposed to each other, wherein the capacitance type sensor has a tapered portion at an end of the fixed electrode and the fixed electrode lead pattern. Capacitance type sensor.