JPH11152600A - Plating apparatus for wafer - Google Patents
Plating apparatus for waferInfo
- Publication number
- JPH11152600A JPH11152600A JP33510397A JP33510397A JPH11152600A JP H11152600 A JPH11152600 A JP H11152600A JP 33510397 A JP33510397 A JP 33510397A JP 33510397 A JP33510397 A JP 33510397A JP H11152600 A JPH11152600 A JP H11152600A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- dielectric
- anode
- plating
- plating apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Electroplating Methods And Accessories (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明はウエハ表面にメッキ
を行なう際に印加する電場の調整が効果的に行なえるウ
エハのメッキ装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wafer plating apparatus capable of effectively adjusting an electric field applied when plating a wafer surface.
【0002】[0002]
【従来の技術】従来、ウエハの表面に電解メッキを施す
ウエハのメッキ装置は、図7に示すように、電解メッキ
液120中に、ウエハ100と、ウエハ100表面に対
向するように設置される平板状のアノード110とを浸
漬し、ウエハ100とアノード110間に通電すること
でウエハ100表面にメッキを行なうように構成されて
いる。2. Description of the Related Art Conventionally, as shown in FIG. 7, a wafer plating apparatus for performing electrolytic plating on the surface of a wafer is installed in an electrolytic plating solution 120 so as to face the wafer 100 and the surface of the wafer 100. The plate-shaped anode 110 is immersed, and a current is applied between the wafer 100 and the anode 110 to perform plating on the surface of the wafer 100.
【0003】[0003]
【発明が解決しようとする課題】しかしながらこのメッ
キ装置においてはその構造上、ウエハ100にメッキを
行なうために電界を印加した場合、図8に示すようにウ
エハ100の外周部ほど電位勾配が高く、従ってウエハ
100の中心部よりも外周部に向かうほどメッキの膜厚
が厚くなる傾向にあった。However, in this plating apparatus, when an electric field is applied to perform plating on the wafer 100 due to its structure, as shown in FIG. Therefore, the thickness of the plated film tends to be larger toward the outer peripheral portion than the central portion of the wafer 100.
【0004】これを避けてウエハ100表面に均一にメ
ッキを施すためには、ウエハ100表面近傍の各部の電
位ができるだけ均一になるように調整する必要がある
が、このため従来はウエハ100とアノード110間に
遮蔽板を設置したり、アノード110の大きさを調整し
たりするなどの方法が取られていた。In order to avoid this and uniformly plate the surface of the wafer 100, it is necessary to adjust the potential of each part near the surface of the wafer 100 to be as uniform as possible. Methods such as installing a shielding plate between the 110 and adjusting the size of the anode 110 have been adopted.
【0005】しかしながらこれらの方法では電位分布の
細かな調整が困難である。特にウエハ100の径が大き
くなればなるほどその中心部と外周部の電位の差が大き
くなるので、ウエハ100表面全体の広い範囲にわたっ
て電位分布を均一にしてメッキを均一に形成することは
困難になる。However, these methods make it difficult to finely adjust the potential distribution. In particular, as the diameter of the wafer 100 increases, the difference in potential between the central portion and the outer peripheral portion increases, so that it is difficult to make the potential distribution uniform over a wide range of the entire surface of the wafer 100 to form a uniform plating. .
【0006】本発明は上述の点に鑑みてなされたもので
ありその目的は、ウエハ上にメッキを行なう場合に印加
する電位分布が細く調整できてウエハ表面に容易に均一
な厚みのメッキを形成することができるウエハのメッキ
装置を提供することにある。SUMMARY OF THE INVENTION The present invention has been made in view of the above points, and an object of the present invention is to make it possible to finely adjust a potential distribution applied when plating on a wafer and easily form a plating of uniform thickness on the wafer surface. It is an object of the present invention to provide a wafer plating apparatus that can perform the plating.
【0007】[0007]
【課題を解決するための手段】上記問題点を解決するた
め本発明は、電解メッキ液中に、ウエハと、ウエハから
所定距離離間してウエハ面に対向するように設置される
アノードとを浸漬し、ウエハとアノード間に通電するこ
とでウエハ表面にメッキを行なうウエハのメッキ装置に
おいて、前記アノードのウエハに対向する側の表面上又
はアノードとウエハ間に誘電体を設置し、該誘電体は前
記ウエハと同心円状にその中心部よりも外周部の方が遮
蔽効果が大きくなるように部分によって遮蔽効果の異な
る構造に形成した。前記誘電体を、板状であってその厚
みが中心部ほど薄く、外周部に向かうほど厚くなるよう
に構成した。或いは前記誘電体を、メッシュ状の板又は
パンチングプレートであって、その開口の大きさが中心
部ほど大きく、外周部に向かうほど小さくなるように構
成した。SUMMARY OF THE INVENTION In order to solve the above-mentioned problems, the present invention provides a method of immersing a wafer and an anode, which is placed at a predetermined distance from the wafer and opposed to the wafer surface, in an electrolytic plating solution. Then, in a wafer plating apparatus that performs plating on the wafer surface by energizing between the wafer and the anode, a dielectric is placed on the surface of the anode facing the wafer or between the anode and the wafer, and the dielectric is The wafer is formed so as to have a different shielding effect depending on the portion so that the outer peripheral portion has a greater shielding effect than the central portion in a concentric circle with the wafer. The dielectric was formed in a plate shape such that its thickness became thinner toward the center and thicker toward the outer periphery. Alternatively, the dielectric is a mesh plate or a punching plate, and the size of the opening is larger toward the center and smaller toward the outer periphery.
【0008】[0008]
【発明の実施の形態】以下、本発明の実施形態を図面に
基づいて詳細に説明する。図1は本発明の一実施形態に
用いるメッキ装置の全体概略図である。同図に示すよう
にこのメッキ装置は、メッキ槽10の電解メッキ液20
中に、ウエハ100とアノード30とを両者の対向面が
平行になるように所定距離離間して浸漬し、さらにアノ
ード30のウエハ100に対向する側の表面に誘電体4
0を取り付けて構成されている。以下各構成部品につい
て説明する。Embodiments of the present invention will be described below in detail with reference to the drawings. FIG. 1 is an overall schematic view of a plating apparatus used in an embodiment of the present invention. As shown in the figure, the plating apparatus is provided with an electrolytic plating solution 20 in a plating tank 10.
The wafer 100 and the anode 30 are immersed therein at a predetermined distance from each other so that the opposing surfaces thereof are parallel to each other.
0 is attached. Hereinafter, each component will be described.
【0009】メッキ槽10はその外周にオーバーフロー
槽13を設け、メッキ槽10とオーバーフロー槽13間
をポンプ15,恒温ユニット17,フィルター19を取
り付けた配管21で接続して構成されている。The plating tank 10 is provided with an overflow tank 13 on the outer periphery thereof, and the plating tank 10 and the overflow tank 13 are connected by a pipe 21 to which a pump 15, a constant temperature unit 17, and a filter 19 are attached.
【0010】ウエハ100は略円板状であって、その外
周をウエハ保持部材101で保持することでその一方の
表面を電解メッキ液20中に露出せしめるように構成さ
れている。The wafer 100 has a substantially disk shape, and is configured such that one surface thereof is exposed in the electrolytic plating solution 20 by holding the outer periphery of the wafer 100 with a wafer holding member 101.
【0011】アノード30は前記ウエハ100と略同一
寸法の円板状に形成されている。The anode 30 is formed in a disk shape having substantially the same dimensions as the wafer 100.
【0012】ここで図2は誘電体40を示す図であり、
同図(a)は平面図、同図(b)は側断面図である。同
図に示すように誘電体40は前記ウエハ100と略同一
寸法の円板状に形成されており、且つ該誘電体40はそ
の厚みが中心部ほど薄く、外周部に向かうほど厚くなる
ように同心円状に階段状にその厚みを異ならせて構成さ
れている。FIG. 2 is a view showing the dielectric 40.
FIG. 1A is a plan view, and FIG. 1B is a side sectional view. As shown in the figure, the dielectric 40 is formed in a disk shape having substantially the same dimensions as the wafer 100, and the thickness of the dielectric 40 is reduced toward the center and increased toward the outer periphery. It is configured so that its thickness is varied concentrically and stepwise.
【0013】この誘電体40の材質としては塩化ビニー
ルを用いているが、それ以外の誘電体材料、例えば耐熱
塩化ビニル,ポリプロピレン,ポリエーテルサルフォ
ン,ポリエーテルエーテルケトン,ポリカーボネート,
ポリエチレン,ポリスチレン,ポリフッ化ビニリデン、
フッ素樹脂等、種々のものを使用してもよい。As a material of the dielectric 40, vinyl chloride is used, but other dielectric materials such as heat-resistant vinyl chloride, polypropylene, polyether sulfone, polyether ether ketone, polycarbonate,
Polyethylene, polystyrene, polyvinylidene fluoride,
Various materials such as a fluororesin may be used.
【0014】次にこのメッキ装置の動作を説明すると、
まずポンプ15を駆動することで恒温ユニット17とフ
ィルター19を通った電解メッキ液20はメッキ槽10
内にその下部から供給されて、オーバーフロー槽13に
オーバーフローし循環する。Next, the operation of the plating apparatus will be described.
First, by driving the pump 15, the electrolytic plating solution 20 passed through the constant temperature unit 17 and the filter 19 is supplied to the plating tank 10.
Is supplied from the lower part thereof, overflows to the overflow tank 13 and circulates.
【0015】このとき同時にウエハ100とアノード3
0間に通電を行なってウエハ100表面にメッキを行な
う。At this time, the wafer 100 and the anode 3 are simultaneously
Electricity is applied during zero to perform plating on the surface of the wafer 100.
【0016】ここで図3はメッキ時におけるウエハ10
0とアノード30周辺の電場の状態を示す等電位線図で
ある。同図に示すように、本実施形態においては、アノ
ード30表面に取り付けた誘電体40の厚みを、中心部
ほど薄く外周部に向かうほど厚くなるように同心円状に
階段状に異ならせたので、即ちウエハ100と同心円状
にその中心部よりも外周部の方が遮蔽効果が大きくなる
ようにその厚みを異ならせたので、電位が高くなりやす
いウエハ100外周部から電位が低くなりやすいウエハ
100中心部への均等な電位分配ができた。従ってウエ
ハ100各部のメッキ膜厚を細かく調整できて均一化す
ることができた。FIG. 3 shows the wafer 10 during plating.
FIG. 3 is an equipotential diagram showing a state of an electric field around 0 and an anode 30. As shown in the figure, in the present embodiment, the thickness of the dielectric 40 attached to the surface of the anode 30 is concentrically varied stepwise so as to be thinner toward the center and thicker toward the outer periphery. That is, since the thickness of the outer peripheral portion is made different from that of the central portion of the wafer 100 concentrically so that the shielding effect is greater than that of the central portion of the wafer 100, the potential of the wafer 100 becomes lower from the outer peripheral portion of the wafer 100 where the potential tends to increase. A uniform potential distribution to the parts was achieved. Therefore, the plating film thickness of each part of the wafer 100 could be finely adjusted and made uniform.
【0017】図4,図5,図6は何れも本発明に用いる
他の構造の誘電体40−2,3,4を示す図であり、そ
れぞれ図(a)は平面図、図(b)は側断面図である。FIGS. 4, 5, and 6 are diagrams showing dielectrics 40-2, 3, and 4 having other structures used in the present invention. FIG. 4A is a plan view, and FIG. Is a side sectional view.
【0018】即ち図4,図5,図6に示す誘電体40−
2,3,4もウエハ100と略同一寸法の円板状に形成
されている。That is, the dielectric 40- shown in FIGS.
The wafers 2, 3, and 4 are also formed in a disk shape having substantially the same dimensions as the wafer 100.
【0019】そして図4に示す誘電体40−2の場合は
誘電体材料からなる円板であってその厚みが中心部ほど
薄く、同心円状に外周部に向かうほど厚くなるようにそ
の表面に球面状の凹部41を設けて構成されている。The dielectric 40-2 shown in FIG. 4 is a disk made of a dielectric material and has a spherical surface on its surface so that its thickness is thinner toward the center and thicker concentrically toward the outer periphery. It is constituted by providing a concave portion 41 of a shape.
【0020】また図5に示す誘電体40−3の場合は誘
電体材料からなる円板に多数の円形の開口43を設けて
いわゆるパンチングプレートにしているが、その際開口
43の大きさを中心部ほど大きく、同心円状に外周部に
向かうほど小さくなるように構成している。In the case of the dielectric 40-3 shown in FIG. 5, a large number of circular openings 43 are provided in a circular plate made of a dielectric material to form a so-called punching plate. The larger the portion, the smaller the size concentrically toward the outer periphery.
【0021】また図6に示す誘電体40−4の場合は誘
電体材料からなる線材をメッシュ状の板に編んで構成さ
れており、その際メッシュの開口45の大きさを中心部
ほど大きく、同心円状に外周部に向かうほど小さくなる
ように形成している。In the case of the dielectric 40-4 shown in FIG. 6, a wire made of a dielectric material is knitted into a mesh-like plate. In this case, the size of the opening 45 of the mesh becomes larger toward the center. It is formed concentrically so as to become smaller toward the outer periphery.
【0022】これら誘電体40−2,3,4の場合も前
記誘電体40と同様に、対向するウエハ100と同心円
状にその中心部よりも外周部の方が遮蔽効果が大きくな
るように部分によって遮蔽効果が異なる構造に形成され
ているので、ウエハ100各部の電位を均等にでき、ウ
エハ100各部のメッキ膜厚を細かく調整できて均一化
することができる。In the case of these dielectrics 40-2, 3, and 4, as in the case of the dielectric 40, the outer periphery is concentric with the opposed wafer 100 so that the outer peripheral portion has a greater shielding effect than the central portion. Thus, since the shielding effect is formed differently, the potential of each part of the wafer 100 can be made uniform, and the plating film thickness of each part of the wafer 100 can be finely adjusted and made uniform.
【0023】なお前記各誘電体40,40−2,3,4
は必ずしもアノード30表面に密着するように取り付け
る必要はなく、アノード30表面から離してウエハ10
0とアノード30の間に設置するようにしても良い。The above dielectrics 40, 40-2, 3, 4
Is not necessarily required to be attached to the surface of the anode 30 so that the wafer 10 is separated from the surface of the anode 30.
It may be arranged between 0 and the anode 30.
【0024】[0024]
【発明の効果】以上詳細に説明したように本発明によれ
ば、アノードの表面上又はアノードとウエハの間に、部
分によって遮蔽効果が異なる構造の誘電体を設置したの
で、中心部から外周部にわたって誘電体による遮蔽効果
を徐々に変えることができ、電場を細かく調整してウエ
ハ全面にわたって電位分布を均一にすることができ、結
果としてメッキ膜厚を均一にすることができるという優
れた効果を有する。As described above in detail, according to the present invention, a dielectric having a structure in which the shielding effect is different depending on the portion is provided on the surface of the anode or between the anode and the wafer. Over the entire surface of the wafer by finely adjusting the electric field, resulting in a uniform plating film thickness. Have.
【図1】本発明の一実施形態に用いるウエハのメッキ装
置の全体概略図である。FIG. 1 is an overall schematic view of a wafer plating apparatus used in an embodiment of the present invention.
【図2】誘電体40を示す図であり、同図(a)は平面
図、同図(b)は側断面図である。FIGS. 2A and 2B are views showing a dielectric 40, wherein FIG. 2A is a plan view and FIG. 2B is a side sectional view.
【図3】ウエハ100とアノード30周辺の電場の状態
を示す等電位線図である。3 is an equipotential diagram showing a state of an electric field around a wafer 100 and an anode 30. FIG.
【図4】他の構造の誘電体40−2を示す図であり、同
図(a)は平面図、同図(b)は側断面図である。4A and 4B are diagrams showing a dielectric body 40-2 having another structure, wherein FIG. 4A is a plan view and FIG. 4B is a side sectional view.
【図5】他の構造の誘電体40−3を示す図であり、同
図(a)は平面図、同図(b)は側断面図である。5A and 5B are diagrams showing a dielectric 40-3 having another structure, wherein FIG. 5A is a plan view and FIG. 5B is a side sectional view.
【図6】他の構造の誘電体40−4を示す図であり、同
図(a)は平面図、同図(b)は側断面図である。6A and 6B are diagrams showing a dielectric 40-4 having another structure, wherein FIG. 6A is a plan view and FIG. 6B is a side sectional view.
【図7】従来のウエハのメッキ装置の全体概略図であ
る。FIG. 7 is an overall schematic view of a conventional wafer plating apparatus.
【図8】ウエハ100とアノード110周辺の電場の状
態を示す等電位線図である。FIG. 8 is an equipotential diagram showing a state of an electric field around the wafer 100 and the anode 110.
10 メッキ槽 20 電解メッキ液 30 アノード 40 誘電体 40−2 誘電体 40−3 誘電体 40−4 誘電体 43 開口 45 開口 100 ウエハ DESCRIPTION OF SYMBOLS 10 Plating tank 20 Electrolytic plating solution 30 Anode 40 Dielectric 40-2 Dielectric 40-3 Dielectric 40-4 Dielectric 43 Opening 45 Opening 100 Wafer
Claims (3)
ら所定距離離間してウエハ面に対向するように設置され
るアノードとを浸漬し、ウエハとアノード間に通電する
ことでウエハ表面にメッキを行なうウエハのメッキ装置
において、前記アノードのウエハに対向する側の表面上
又はアノードとウエハ間に誘電体を設置し、該誘電体は
前記ウエハと同心円状にその中心部よりも外周部の方が
遮蔽効果が大きくなるように部分によって遮蔽効果の異
なる構造に形成されていることを特徴とするウエハのメ
ッキ装置。1. A wafer and an anode provided at a predetermined distance from the wafer and opposed to the wafer surface are immersed in an electrolytic plating solution, and a current is applied between the wafer and the anode to plate the wafer surface. In the wafer plating apparatus, a dielectric is provided on the surface of the anode facing the wafer or between the anode and the wafer, and the dielectric is arranged concentrically with the wafer toward an outer peripheral portion than a central portion thereof. Is formed in a structure having different shielding effects depending on portions so as to increase the shielding effect.
中心部ほど薄く、外周部に向かうほど厚くなるように構
成されていることを特徴とする請求項1記載のウエハの
メッキ装置。2. A wafer plating apparatus according to claim 1, wherein said dielectric has a plate shape, and is configured such that its thickness becomes thinner toward a central portion and becomes thicker toward an outer peripheral portion. .
ングプレートであって、その開口の大きさが中心部ほど
大きく、外周部に向かうほど小さくなるように構成され
ていることを特徴とする請求項1記載のウエハのメッキ
装置。3. The dielectric according to claim 1, wherein the dielectric is a mesh plate or a punching plate, and the size of the opening is larger toward the center and smaller toward the outer periphery. Item 2. A wafer plating apparatus according to Item 1.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP33510397A JP3836588B2 (en) | 1997-11-19 | 1997-11-19 | Wafer plating equipment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP33510397A JP3836588B2 (en) | 1997-11-19 | 1997-11-19 | Wafer plating equipment |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH11152600A true JPH11152600A (en) | 1999-06-08 |
JP3836588B2 JP3836588B2 (en) | 2006-10-25 |
Family
ID=18284814
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP33510397A Expired - Lifetime JP3836588B2 (en) | 1997-11-19 | 1997-11-19 | Wafer plating equipment |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP3836588B2 (en) |
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