JPH11121674A - Method and equipment for plating semiconductor lead frame - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide with a simple structure a technology for plating a lead frame for mounting a semiconductor uniform in thickness and for coping immediately especially to the semiconductor mounting lead frames of various standards. SOLUTION: A pair of cathodes 8 having a prescribed parallel interval are arranged vertically in a second tank 3. In a method and equipment, the lead frame is plated by conducting a lead frame 19 inserted between the cathodes as an anode and the cathodes. The edge periphery of the immersed part of the lead frame 19 arranged between the cathodes 8 is surrounded by partition plates 5, 6 and 7 and a liquid conduction region 24 is formed. The lateral position of the partition plate 7 and the depth of the partition plate can be adjusted.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plating method and apparatus for plating a lead frame on which a semiconductor is mounted with a uniform thickness, and more particularly to a lead frame for mounting semiconductors of various sizes with a simple structure. The present invention relates to a plating method and an apparatus that can immediately respond to the problems.

[0002]

2. Description of the Related Art Conventionally, in this type of plating apparatus,
A positive electrode having a larger area than a lead frame to be plated is arranged in a plating tank, and a lead frame connected to a negative electrode is immersed in the plating tank so as to face the positive electrode to perform plating. When such an arrangement structure is adopted, there is a characteristic that a current distribution state is concentrated on an end portion of the lead frame at the time of energization, so that the plating film thickness at the end portion of the lead frame is correspondingly increased. For this reason, conventionally, for example, Japanese Unexamined Patent Application Publication No. 5-315
As in the prior art described in Japanese Patent Publication No. 505-505, in order to allow a current to flow uniformly between the positive electrode and the lead frame, an individually corresponding type having openings corresponding to lead frames of various sizes and shapes. Are disposed between the lead frame and the positive electrode.

[0003]

However, as in the prior art, a shielding plate having an opening corresponding to the lead frame is provided in order to allow a current to flow uniformly between the positive electrode and the lead frame. The structure in which the lead frame is disposed between the lead frame and the positive electrode has a problem that a shield plate having openings corresponding to lead frames of various sizes must be prepared as described above. Also, it takes extra labor and time to prepare and set,
That is affecting productivity. In addition, there is a problem that it is necessary to cope with the frame size of a semiconductor device whose performance and functions have been diversified in recent years, and that management for coping with high-mix low-volume production has become complicated.

SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and an object of the present invention is to provide a lead frame on which a semiconductor is mounted with a plating having a uniform thickness, which is particularly simple. It is an object of the present invention to provide a plating method and a plating apparatus capable of immediately responding to a semiconductor mounting lead frame of various standards with a simple structure.

[0005]

According to a first aspect of the present invention, there is provided a method for plating a semiconductor lead frame, comprising the steps of: placing a pair of positive electrodes perpendicular to a plating position with a constant parallel interval; The lead frame mounted with a semiconductor is immersed in a plating solution so as to be inserted between the positive electrodes, and the lead frame is plated on the lead frame by applying a current between the positive electrode and the lead frame as a negative electrode. In the method of plating a semiconductor lead frame that is to be treated, the horizontal partition plate horizontally arranged in contact with the lower side of the gap between the positive electrodes or the lower end of the gap is brought into contact with the entire length of the lower edge of the lead frame, and up to the upper edge of the lead frame. By filling the plating solution, the lead area in the liquid formed in the space sandwiched between the positive electrode surface and the lead frame surface facing the positive electrode surface can be read. It decided to plating in height and a state of defining the substantially same frame.

In the method of plating a semiconductor lead frame according to the second aspect, the horizontal partition plate according to the first aspect has a large number of through holes, and a vertical wall is provided below the periphery of the horizontal partition plate so as to extend around the horizontal partition plate. By arranging a closed space below the partition plate, and by pumping the plating solution into the closed space, the plating process is performed in a state where the plating solution flows into the energized region in the solution only through the through hole. .

According to a third aspect of the present invention, there is provided a method for plating a semiconductor lead frame according to the first or second aspect, wherein each of the positive electrodes is disposed in a side gap or along a side gap. By arranging vertically arranged vertical partition plates in contact with the entire length of both side edges of the lead frame, plating is performed in a state where the vertical cross section of the submerged electric current region is defined to be substantially the same as the negative electrode surface of the lead frame. It was decided to process.

According to a fourth aspect of the present invention, in the apparatus for plating a semiconductor lead frame, a pair of positive electrodes are vertically arranged at a plating position with a constant parallel interval, and a lead frame on which a semiconductor is mounted is placed between the positive electrodes. In a plating apparatus for a semiconductor lead frame, the lead frame is immersed in a plating solution so as to be inserted, and the lead frame is subjected to plating by energizing the lead frame as a negative electrode and the positive electrode. A horizontal partition plate which can be abutted on the entire length of the lower edge of the frame and is horizontally arranged below the gap between the positive electrodes or in contact with the lower end of the gap; and an upper edge of the lead frame which is arranged along the lower edge of the horizontal partition plate And a plating solution supplied to the substrate.

According to a fifth aspect of the present invention, there is provided a plating apparatus for a semiconductor lead frame, wherein a large number of through holes are formed in the horizontal partition plate according to the fourth aspect, and the vertical partition wall surrounds the horizontal partition plate so as to be below the horizontal partition plate. A closed space is defined in the second space, and a supply path for a plating solution communicating with the closed space is provided.

According to a sixth aspect of the present invention, there is provided the plating apparatus for a semiconductor lead frame according to the fourth or fifth aspect, wherein the positive electrode is disposed in a side gap or along the side gap between the positive electrodes. The vertical partition plates are provided vertically along the entire length of both side edges of the lead frame disposed on the horizontal partition plate.

According to a seventh aspect of the present invention, in the lead frame plating apparatus according to any one of the fourth to sixth aspects, a large number of through holes are formed in the vertical partition plate. The configuration was adopted.

According to an eighth aspect of the present invention, in the plating apparatus for a semiconductor lead frame according to the sixth or seventh aspect, an upper edge height of the vertical partition plate is defined as an upper edge height of the lead frame. The configuration was such that they were formed at substantially the same height.

According to a ninth aspect of the present invention, in the plating apparatus for a lead frame according to any one of the sixth to eighth aspects, at least one of the vertical partition plates is horizontally connected to the lead frame. The configuration is such that it can be moved laterally in the arrangement direction.

According to a tenth aspect of the present invention, in the plating apparatus of a lead frame according to any one of the sixth to ninth aspects, the vertical partition plate is detachably provided at a plating position. Configuration.

According to an eleventh aspect of the present invention, in the apparatus for plating a lead frame according to any one of the fourth to tenth aspects, the horizontal partition plate is formed to be vertically movable. And

According to a twelfth aspect of the present invention, in the plating apparatus for a lead frame according to any one of the fourth to eleventh aspects, the horizontal partition plate is detachably provided at a plating position. Configuration.

[0017]

In the method for plating a semiconductor lead frame according to the first aspect of the present invention, the current flowing region in the liquid is defined to be substantially the same as the height of the lead frame. Even if a positive electrode larger than the size is used, plating with a uniform film thickness is performed in the vertical direction of the lead frame. In this case, even when the upper surface of the liquid is wavy due to the inflow of the plating solution or the like, the upper and lower edges can be made substantially the same by adjusting the upper edge of the lead frame to the valley.

In the method for plating a semiconductor lead frame according to the second aspect, the plating solution is supplied from the closed space to the current-carrying region in the solution, so that the supplied plating solution is efficiently brought into contact with the lead frame in a stirring state. A plating process with a uniform film thickness is performed on the lead frame.

In the method for plating a semiconductor lead frame according to the third aspect, the apparent area of the positive electrode with respect to the lead frame is made substantially the same so that the current during plating is prevented from being concentrated on the entire periphery of the lead frame. A plating process with a uniform film thickness is performed on the entire surface of the frame.

In the plating apparatus for a semiconductor lead frame according to the fourth aspect of the present invention, the current flowing area in the liquid is defined to be substantially the same as the height of the lead frame. Even if a larger positive electrode is used, the lead frame is plated with a uniform film thickness.

In the plating apparatus for a semiconductor lead frame according to the fifth aspect, the plating solution is supplied from the closed space to the energized region in the solution, and the plating solution supplied to the periphery of the lead frame is brought into a stirring state to efficiently contact the lead frame. Then, a plating process with a uniform film thickness is performed on the lead frame.

In the apparatus for plating a semiconductor lead frame according to a sixth aspect of the present invention, the apparent area of the positive electrode with respect to the lead frame is substantially matched to further prevent the current during plating from being concentrated on the entire periphery of the lead frame. Then, a plating process with a uniform film thickness is performed on the entire surface of the lead frame.

In the plating apparatus for a semiconductor lead frame according to a seventh aspect of the present invention, the plating solution is supplied from the closed space to the current flowing area in the liquid to overflow from the upper edge side of the lead frame and / or to the outside also from the vertical partition plate side. By discharging, the supplied plating solution is brought into a more agitated state and efficiently brought into contact with the lead frame, and the lead frame is subjected to a plating process with a uniform film thickness.

In the plating apparatus for a semiconductor lead frame according to the present invention, the plating solution is supplied from the closed space into the submerged energization region and overflows from the upper edge side of the lead frame and also from the vertical partition plate side to the outside. The supplied plating solution is further agitated to efficiently contact the lead frame, and the lead frame is plated with a uniform film thickness.

In the plating apparatus for a semiconductor lead frame according to the ninth aspect, by moving the vertical partition wall plate along the side edge of the set lead frame, it is ensured that the submerged energized area corresponding to various lead frame sizes is formed. Since it can be formed, a plating process with a uniform film thickness is performed on lead frames of various sizes with a set of partition plates.

In the semiconductor lead frame plating apparatus according to the tenth aspect, a setup change such as replacement with a vertical partition plate suitable for a specific lead frame is made possible, and the use range of the apparatus is expanded.

In the plating apparatus for a semiconductor lead frame according to the eleventh aspect, the partition plate disposed below the gap between the positive electrodes can be adjusted to an optimum immersion depth of the lead frame, so that lead frames of various sizes are provided. Accordingly, the current during plating is prevented from being concentrated on the upper and lower edges, and a plating process with a uniform film thickness is performed on lead frames of various sizes.

In the apparatus for plating a semiconductor lead frame according to the twelfth aspect, a changeover such as replacement with a horizontal partition plate or a vertical partition plate suitable for a specific lead frame is made possible, and the range of use of the device is expanded.

[0029]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the present invention will be described below with reference to FIGS. FIG. 1 and FIG.
1 is a front sectional view and a side sectional view showing a plating apparatus for a semiconductor lead frame according to an embodiment of the present invention. In this embodiment, a method of setting the long side of the lead frame in the horizontal direction and the short side thereof in the vertical direction will be described. In the drawing, reference numeral 1 denotes a first tank which constitutes the outside of the plating tank, and rods 2 whose outer peripheral surfaces are used for sliding are protruded from central portions of both side surfaces.

Reference numeral 3 denotes a second tank which constitutes the inside of the plating tank. A space 11 is provided around the first tank 1 and an overflow line 13 for the plating solution 12 is provided.
Is disposed inside the first tank 1 such that the upper end thereof is lower than the upper end of the first tank 1. At the inner bottom of the second tank, a vertical partition wall 14 formed in the shape of a rectangular tube, which also serves as a guide for a partition plate elevating unit 4 to be described later, protrudes. This rectangular vertical partition wall 14 is slidable around the distal end portions 18 of the horizontal partition plate 6 and the fixed vertical partition plates 5 and 5 so as to temporarily receive the plating solution supplied from a pump (not shown). It is provided to surround. With this configuration, a closed space 24 is formed below the horizontal partition plate 6.
Reference numeral 15 denotes an inlet for the plating solution 12, and the closed space 24
And the pump communicate with each other. Reference numeral 16 denotes an overflow line 1 for the plating solution 12 introduced into the second tank.
3 is a discharge port for returning the plating solution flowing out from 3 to the pump side. The white arrows in the figure indicate the flow direction of the plating solution.

Numeral 4 denotes the above-mentioned partition plate raising and lowering portion. The horizontal connecting portions 17 provided at both ends of the horizontal connecting portions 17 are slidably mounted on the rods 2, respectively.
7, the fixed-side vertical partition plate 5 is suspended from the tank arrangement side such that the distal end portions 18 are slidably inserted into the insides of the guide plates 14. Reference numeral 6 denotes a horizontal partition plate fixed between the fixed side vertical partition plates 5, and an overflow line 1 of the second tank is provided above the horizontal partition plate.
The lead frame 19 can be accommodated in a horizontally long and vertical state below the position 3.

Numeral 7 denotes a laterally moving vertical partitioning plate provided only on one side of the fixed vertical partitioning plate 5, and a partitioning plate horizontal moving portion 20 slidably disposed on the horizontal connecting portion 17.
It is hanging at the tip of. In addition, the partition plate horizontal moving unit 2
0 has an elongated hole 21 extending in the long side (horizontally arranged) direction of the lead frame 19, and is held by the bolt 22 on the horizontal connecting portion 17. The fixed-side vertical partition plate 5, the horizontal partition plate 6, and the horizontal-movement-side vertical partition plate 7 are each formed to have substantially the same width by an insulator, are arranged in the same order, and are provided with a large number of through holes 23. I have.

Reference numeral 8 denotes a pair of positive electrodes, which are provided in a mesh case so as to accommodate a metal material for plating, for example, solder balls. The fixed-side vertical partition plate 5, the horizontal partition plate 6, and the horizontal-movement-side vertical partition plate are provided. 7 are fixed to the second tank so as to be in contact with the respective edges. Reference numeral 9 denotes a negative electrode, which is formed in a triple grip shape which can be simultaneously opened and closed.

Next, the operation of the present embodiment will be described. Each partition plate is set at a predetermined position in advance according to the lead frame size. First, the partition plate lifting / lowering unit 4 is raised and lowered, and the distance from the overflow line 13 to the horizontal partition plate 6 is adjusted to the short side dimension of the lead frame 19 to be plated this time. Alternatively, the depth dimension is adjusted by adjusting the amount of liquid to be supplied. When the plating solution is wavy due to agitation, the upper edge of the lead frame may be aligned with the valley of the wave. Next, by moving the partition plate horizontal moving section 20 toward the center of the first tank 1, the horizontal moving side vertical partition plate 7 is adjusted to the long side dimension of the lead frame 19. As a result, between the lead frame and the positive electrode, a submerged energized region 25 limited to the positive electrode surface having the same size as the lead frame size is created. After this setting, the lead frame 19 is inserted.

In the state described above, the lead frame 19 is moved in the submerged portion so that the vertical partition plate 7 on the lateral movement side abutting on one side edge.
And a fixed-side vertical partition plate 5 provided on the other side edge, and a horizontal partition plate 6 abutted on the lower edge.
An extra wide part of the positive electrode 8 is electrically isolated. By supplying the plating solution into the closed space 24 in this state, the plating solution is supplied into the current-carrying region 25 through the through hole 23 of the horizontal partition plate 6, and the fresh plating solution directly contacts the lead frame surface. And is efficiently plated. In addition, since the upper edge of the lead frame 19 is substantially at the same level as the liquid level, even if the positive electrode has a wider portion than that, the liquid level is limited. Therefore, when a DC current is supplied between the positive electrode 8 and the negative electrode 9, the current flowing region 25 in the liquid is limited to the lead frame size, and the current sneak from the extra positive electrode portion is prevented, and the current density as a whole is reduced. Are equalized. Therefore, plating with a uniform film thickness can be applied to the entire surface of the lead frame.

3 and 4 show the results of a comparison test of plating performance between the conventional apparatus and the apparatus according to the present embodiment. In each case, the vertical axis indicates the plating film thickness, and the horizontal axis indicates the measurement position. ing. FIG. 3A shows a lead frame used for the test. In the figure, 50 is a lead frame on which a semiconductor is mounted, and 51 is an outer lead portion to which plating is actually performed. The marks in each graph indicate the film thickness at the intersection of the vertical and horizontal lines in the lead frame diagram. FIG. 3 (b) shows the test results obtained by the conventional apparatus. As shown in the graph, at 1 on the abscissa, series 1 is significantly thicker, and at the other portions, the film thicknesses of series 1 and series 3 are different. The difference is significant. That is,
From this result, it can be seen that current sneak into the upper edge of the lead frame occurs. On the other hand, in the test results by the apparatus of the present embodiment shown in FIG. 4, the film thickness is entirely constant and a range of ± 2 μm is obtained (about ± 4 μm in the conventional apparatus).

5 and 6 show other test results (measurement positions are symmetrical). FIG. 5 shows the result of the conventional apparatus, and FIG. 6 shows the result of the apparatus of the present embodiment. is there. According to FIG. 5, the film thickness at the left and right ends is large, and the film thickness is totally disturbed (there is a difference of 8 μm at the maximum). On the other hand, in FIG. 6, that is, in the apparatus of the present embodiment, a uniform film thickness is obtained as a whole (there is a difference of 2 μm at the maximum).

As described above, according to the apparatus for plating a semiconductor lead frame of the present embodiment, the positive electrode 8 which is wider than the lead frame 19 in the submerged portion is provided with the partition plate 5 surrounding the lead frame 19. Since they are isolated from each other by 6 and 7, it is possible to prevent current during plating from being concentrated on the edge of the lead frame 19, and to perform plating with a uniform film thickness on the entire surface of the lead frame 19.

Further, the lower edge and both side edges of the lead frame 19 inserted between the positive electrodes 8 are separated from excess portions of the positive electrode 8 by the partition plates 5, 6, and 7, and the upper edge of the lead frame 19 is By matching to the overflow line 13, its upper edge is also isolated. Therefore, the lead frame 19
The surface of the wider positive electrode 8 facing the lead frame 19 can have substantially the same area as the lead frame 19. In this case, by adjusting the horizontal position of the laterally moving side vertical partition plate 7 arranged on the side edge of the lead frame 19, it is possible to cope with lead frames of various sizes. Therefore, labor and time required for the preparation and setting are saved, and the productivity can be increased accordingly. In addition, it is possible to immediately cope with the frame size of a semiconductor device whose performance and functions have been diversified in recent years, and it is possible to extremely simplify management for coping with high-mix low-volume production.

Around the edge of the lead frame 19, the partition plates 5,
Even if the lead frame 19 is surrounded by disposing the lead wires 6 and 7, the plating solution 12 can be made to flow better from the outside of the partition plate through the through holes 23, and the plating efficiency and quality can be maintained well.

Although the embodiment of the present invention has been described above, the specific configuration of the present invention is not limited to this embodiment, and a design change or the like may be made without departing from the gist of the present invention. If so, they are included in the present invention.

For example, a drive control means can be provided so that the movement and position setting of the horizontal and vertical partition plates can be automatically adjusted. In this case, more efficient work can be performed. Furthermore, by doing so, you only need to enter the external dimensions (height, width, thickness, etc.) of the lead frame.
It is also possible to carry out a plating process immediately, and automation and labor saving which were impossible in the past can be realized as long as an individual shielding plate is required.

In addition, a plurality of types of partition plates which are formed in a substantially U-shape only by combining the fixed-side vertical partition plates 5 and 5 and the horizontal partition plate 6 in accordance with a specific lead frame size are prepared. Alternatively, the set may be replaced when the setup is changed. In this case, it is suitable for mass production of small varieties.

[0044]

As described above, the first aspect of the present invention is as follows.
In the described method of plating a semiconductor lead frame,
Since the above-described method was employed, the submerged energized area was defined to be substantially the same as the height of the lead frame, so that by blocking the current flowing around the edge of the lead frame, positive electrodes corresponding to various lead frame sizes were used. Even so, an effect that a plating process with a uniform film thickness can be performed on the lead frame can be obtained.

In the method for plating a semiconductor lead frame according to the second aspect of the present invention, since the above method is employed, the plating solution is supplied from the closed space to the current-carrying region in the solution.
The effect is obtained that the supplied plating solution is brought into a stirring state and efficiently brought into contact with the lead frame, so that the lead frame can be plated with a uniform film thickness.

In the method for plating a semiconductor lead frame according to the third aspect of the present invention, since the above method is adopted, the apparent area of the positive electrode with respect to the lead frame is made substantially the same, so that the entire periphery of the lead frame can be plated. Is prevented from being concentrated, and the plating process having a uniform film thickness can be performed on the entire surface of the lead frame.

According to the fourth aspect of the present invention, in the plating apparatus for a semiconductor lead frame, the above-described configuration defines the current flowing area in the liquid substantially equal to the height of the lead frame. By blocking, even if positive electrodes corresponding to lead frames of various sizes are used, an effect is obtained that plating processing of a uniform thickness can be performed on the lead frame.

According to the semiconductor lead frame plating apparatus of the present invention, the plating liquid is supplied from the closed space into the current flowing area in the liquid and overflows from the upper edge side of the lead frame, thereby supplying the plating liquid. Keep the plating solution in contact with the lead frame efficiently,
The effect of being able to perform a plating process with a uniform film thickness on the lead frame is obtained.

According to the sixth aspect of the present invention, in the semiconductor lead frame plating apparatus, the apparent area of the positive electrode with respect to the lead frame is made substantially the same so that the entire peripheral edge of the lead frame can be plated. It is possible to prevent the current from concentrating, and to achieve an effect of performing a plating process with a uniform film thickness on the entire surface of the lead frame.

According to the semiconductor lead frame plating apparatus of the present invention, the plating liquid is supplied from the closed space to the submerged energizing region to overflow from the upper edge side of the lead frame, and / or By discharging the plating solution to the outside from the side of the vertical partition plate, the supplied plating solution is brought into a more agitated state and efficiently brought into contact with the lead frame, so that the plating process can be performed with a uniform film thickness on the lead frame.

In the apparatus for plating a semiconductor lead frame according to the present invention, the plating liquid is supplied from the closed space to the energized region in the liquid, so that the plating liquid is supplied from the upper edge side of the lead frame and from the vertical partition plate side. By overflowing the plating solution to the outside as well, it is possible to obtain an effect that the supplied plating solution is further stirred and brought into efficient contact with the lead frame, so that a plating process with a uniform film thickness can be performed on the lead frame.

According to the semiconductor lead frame plating apparatus of the ninth aspect, since the above configuration is adopted, the vertical partition plate can be moved along the side edge of the set lead frame to cope with various lead frame sizes. Since the submerged energized region can be reliably formed, it is possible to obtain an effect that a set of partition plates can perform a plating process of a uniform thickness on lead frames of various sizes.

In the semiconductor lead frame plating apparatus according to the tenth aspect, since the above-described configuration is adopted, a setup change such as replacement with a vertical partition plate suitable for a specific lead frame can be performed, and a use range of the apparatus can be expanded. The effect is obtained.

In the semiconductor lead frame plating apparatus according to the eleventh aspect, the partition plate disposed below the gap between the positive electrodes can be adjusted to the optimum immersion depth of the lead frame. Therefore, it is possible to prevent the current at the time of plating from being concentrated on the upper and lower edges corresponding to various sizes of lead frames, and to perform a plating process of uniform film thickness on various sizes of lead frames. The effect is obtained.

According to the twelfth aspect of the present invention, the semiconductor lead frame plating apparatus is configured as described above, so that a setup change such as replacement with a horizontal partition plate or a vertical partition plate suitable for a specific lead frame can be performed. Can be expanded. Also, in this case,
In particular, effects such as being suitable for mass production of small varieties are obtained.

[Brief description of the drawings]

FIG. 1 is a front sectional view showing a plating apparatus for a semiconductor lead frame according to an embodiment of the present invention.

FIG. 2 is a side sectional view showing a plating apparatus for a semiconductor lead frame according to the first embodiment;

FIG. 3 is a graph showing test results obtained by a conventional device.

FIG. 4 is a graph showing test results obtained by the apparatus according to the embodiment.

FIG. 5 is a graph showing another test result by the conventional device.

FIG. 6 is a graph showing another test result by the device of the present embodiment.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 1st tank (plating tank) 3 2nd tank (plating tank) 4 Partition plate raising / lowering part 5 Fixed side vertical partition plate 6 Horizontal partition plate 7 Lateral moving side vertical partition plate 8 Positive electrode 9 Negative electrode 13 Plating solution overflow line DESCRIPTION OF SYMBOLS 19 Lead frame 20 Partition part horizontal movement part 23 Through-hole 24 Closed space 25 Electric conduction area in liquid

Claims (12)

[Claims] 1. A pair of positive electrodes are vertically arranged at a plating position with a certain parallel interval, and a lead frame mounting a semiconductor is immersed in a plating solution so as to be inserted between the positive electrodes. In a method of plating a semiconductor lead frame, the lead frame is plated as a negative electrode by applying a current between the positive electrode and the positive electrode. The horizontally arranged horizontal partition plate is brought into contact with the entire length of the lower edge of the lead frame, and is filled with the plating solution up to the upper edge of the lead frame, so that the positive electrode surface and the lead frame surface facing the positive electrode surface are sandwiched. A plating method for a semiconductor lead frame, wherein a plating process is performed in a state where a current-carrying region formed in the space is defined to be substantially equal to the height of the lead frame. . 2. The horizontal partition plate has a large number of through holes,
A vertical wall is provided below the periphery of the horizontal partition plate, and a closed space is disposed below the horizontal partition plate, and the plating solution is pumped into the closed space, so that the plating solution is supplied only through the through hole. 2. The method for plating a semiconductor lead frame according to claim 1, wherein a plating process is performed in a state where the plating is performed while flowing into the submerged energization region. 3. A vertical partition plate vertically arranged in or on both sides of the positive electrode and in contact with the entire length of both sides of the lead frame, whereby the submerged electricity area is formed. 3. The plating method for a semiconductor lead frame according to claim 1, wherein the plating is performed in a state where the vertical section is defined to be substantially the same as the surface of the negative electrode formed by the lead frame. 4. A pair of positive electrodes are vertically arranged at a plating position with a certain parallel interval, and a lead frame mounting a semiconductor is immersed in a plating solution so as to be inserted between the positive electrodes. In a semiconductor lead frame plating apparatus in which the lead frame is subjected to plating by energizing the lead frame as a negative electrode and the positive electrode, the lead frame can be brought into contact with the entire length of the lower edge of the lead frame. A horizontal partition plate horizontally arranged in contact with the lower part of the gap between the positive electrodes or in contact with the lower end of the gap, and a plating solution supplied to the upper edge of the lead frame arranged along the lower edge of the horizontal partition plate. A plating apparatus for a semiconductor lead frame, characterized in that: 5. A plating system in which a number of through holes are formed in the horizontal partition plate, a vertical partition wall surrounds the horizontal partition plate to define a closed space below the horizontal partition plate, and plating communicates with the closed space. 5. The plating apparatus for a semiconductor lead frame according to claim 4, wherein a liquid supply path is provided. 6. A vertical partition plate, which is disposed in or along the side gap between the positive electrodes and vertically suspended along the entire length of both sides of the lead frame disposed on the horizontal partition plate. The plating apparatus for a semiconductor lead frame according to claim 4, wherein the plating apparatus includes a plating apparatus. 7. The semiconductor lead frame plating apparatus according to claim 6, wherein a number of through holes are opened in said vertical partition plate. 8. The semiconductor lead frame plating apparatus according to claim 6, wherein an upper edge height of said vertical partition plate is formed to be substantially the same as an upper edge height of said lead frame. . 9. The semiconductor lead frame according to claim 6, wherein at least one of said vertical partition plates is formed so as to be laterally movable in a horizontal direction of the lead frame. Plating equipment. 10. The plating apparatus for a semiconductor lead frame according to claim 6, wherein said vertical partition plate is detachably provided at a plating position. 11. The plating apparatus for a semiconductor lead frame according to claim 4, wherein said horizontal partition plate is formed to be vertically movable. 12. The plate according to claim 4, wherein said horizontal partition plate is detachably provided at a plating position.
The plating apparatus for a semiconductor lead frame according to any one of the above items.