JPH11112340A - Dual pll synthesizer, high frequency module and manufacture of board for high frequency module - Google Patents

Abstract

PROBLEM TO BE SOLVED: To make a dual PLL synthesizer small in size and low in cost. SOLUTION: Two frequency synthesizers 1a and 1b for changing over the channel of a high frequency signal to be outputted are provided. Attenuators 2a and 2b, amplifiers 3a and 3b, attenuators 4a and 4b, amplifiers 5a and 5b and a switch circuit 7 are connected to the post-stages of the frequency synthesizers 1a and 1b. A channel switch circuit 9 changes over the turning on/off of the amplifiers 3a and 3b and the amplifiers 5a and 5b and the switch circuit 7. Large isolation is secured between the frequency synthesizers 1a and 1b and the switch circuit 7 of the post-stage by the attenuators 2a and 2b and the amplifiers 3a, 3b, 5a and 5b, and isolation between two systems is achieved.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a dual PLL synthesizer which is used, for example, as a local oscillator or a carrier oscillator of a transmitter / receiver of a PHS base station, and which can switch an oscillation frequency channel at high speed. The present invention also relates to a high-frequency module having a structure in which a substrate on which a high-frequency circuit such as a dual PLL synthesizer is mounted is mounted on a motherboard, and a method of manufacturing a substrate used for the high-frequency module.

[0002]

2. Description of the Related Art A conventional dual PLL synthesizer generally has a circuit configuration as shown in FIG.
Two PLL circuits 101a and 101b are used for switching channels A and B in order to switch the channel of the high frequency signal in the GHz band at high speed.
It is provided for use. Isolation amplifiers 102a and 102b and amplifiers 103a and 103b are connected to output stages of the PLL circuits 101a and 101b, respectively.
The output signals a and b are alternately switched by the switch circuit 104 and output to the output terminal.

The switching between channels A and B is performed by a switching circuit 105 based on a channel switching signal α introduced from outside. That is, VC1 and VC1 voltages are alternately output from the switching circuit 105 based on the channel switching signal α, and the amplifier 1 responds accordingly.
03a and 03b and switching of the switch circuit 104 are performed. As a result, the high-frequency signals output from the PLL circuits 101a and 101b are alternately output based on the channel switching signal α.

As shown in FIG. 10, the switch circuit 104 comprises a capacitor C, a diode D, and a 1 / 4.lambda. Strip line SL. The circuit itself is symmetrical so that the impedance seen from the output terminal out at the time of switching is constant. Has been. The circuit on the channel A side shown in FIG.
When the voltage of C1 is applied, the output signal of the amplifier 103a input from the input terminal in1 is output to the output terminal out, while the VC2 circuit shown in FIG.
Is applied, the output signal of the amplifier 103b input from the input terminal in2 is output to the output terminal out.

The circuit components of such a dual PLL synthesizer are mounted on both sides of a board mounted on a motherboard. The components of the high-frequency circuit mounted on the surface of the substrate are shielded by a shield case so as to cover them from above. This shield case is attached to the motherboard. Since it is necessary to shield the components of the high-frequency circuit mounted on the back surface of the substrate, the back surface of the motherboard is covered with a lower cover, which is used as a shield plate. The lower cover is also attached to the motherboard. A module having such a structure is commercially available as a dual PLL synthesizer module.

[0006]

However, in the case of the above conventional example, the capacity of the dual PLL synthesizer module is limited to about 30 ml, and it is very difficult to further reduce the size and cost. is there. Factors that hinder downsizing and cost reduction of the dual PLL synthesizer module are as follows.

First, an isolation amplifier 10
2a and 2b are housed in a package and have large dimensions and are expensive. Further, the switch circuit 105 is housed in a shield case, and the dimensions as parts are large.
The circuit itself is complicated and expensive, for example, a strip line SL of 4λ is formed in a high dielectric material. Since the isolation amplifiers 102a and 102b and the switch circuit 104 have large dimensions as components, the size of the substrate is also large.

Second, in order to transfer a signal from a circuit on a motherboard to a dual PLL synthesizer on a board, a coaxial cable is generally used, and a dedicated connector having a characteristic impedance of 50Ω is provided on the board and the board. Since it is necessary to mount on a motherboard, the cost of parts is increased, and the size of a board or the like is increased.

Third, the dual PLL synthesizer 2
Although 80 dB or more is required for the isolation between the systems, the isolation amplifiers 102a and 102b and the switch circuit 105 alone are not enough. Therefore, the circuit block for the channel A and the circuit block for the channel B are physically mounted on the board. Insufficient isolation is compensated for by increasing the shielding effect between the two circuit blocks, for example, by arranging them apart from each other. However, both circuit blocks have at least two
Since it is necessary to separate them by about 0 mm, the size of the substrate is increased by this amount. In addition, isolation amplifier 1
The current consumption of the devices 02a and 02b is relatively large, and accordingly, a power supply having a large capacity is required.

Fourth, since the circuit components of the dual PLL synthesizer are mounted on both sides of the board, the thickness increases, and the PLL synthesizer module increases accordingly. In addition, when the shield case is mounted on the motherboard, it is necessary to form a through hole on the motherboard for inserting the shield case mounting feet, and to form a land therearound. Since this land is located near the edge of the motherboard, the motherboard becomes large.

Fifth, it is necessary to attach the shield case and the lower cover to the motherboard, and this attaching work is troublesome, so that the manufacturing cost increases.

The present invention has been made in view of the above background, and an object of the present invention is to provide a dual PLL synthesizer, a high-frequency module, and a method of manufacturing a high-frequency module substrate which can be reduced in size and cost. To provide.

[0013]

In order to solve the above problem, a dual PLL synthesizer according to the present invention has two PLL circuits for channels A and B in order to switch the channel of a high-frequency signal to be output at high speed. And a high-frequency signal generated by the PLL circuit is alternately switched based on a channel switching signal and output, and is connected to the output side of the PLL circuit. A with a small capacitance coupled to achieve isolation
And B attenuators, amplifiers for channels A and B respectively connected to the output side of the attenuator, a switch circuit for switching and outputting signals respectively output from the amplifiers, and a channel switching signal for channel A. When the channel B amplifier is turned on, the channel A amplifier is turned on from off and the switch circuit is operated so that the output signal of the amplifier is selected. A channel switching circuit for operating the switch circuit so that an output signal of the amplifier is selected.

In such a configuration, when the channel switching signal indicates channel A, the high-frequency signal output from the channel A PLL circuit is sequentially passed through the channel A attenuator, the channel A amplifier, and the switch circuit. On the other hand, when indicating channel B, the high-frequency signal output from the channel B PLL circuit is sequentially output through the channel B attenuator, the channel B amplifier, and the switch circuit.

Both the channel A and B attenuators and the channel A and B amplifiers make the channels A and B
Large isolation is ensured between the B PLL circuit and the subsequent switch circuit, and isolation between the two systems is achieved.

Although the high-frequency signals output from the PLL circuits for channels A and B are attenuated by the attenuators for channels A and B, the subsequent channels A and B are attenuated.
And the deterioration of the C / N ratio due to signal attenuation is suppressed.

According to another dual PLL synthesizer of the present invention, a switch circuit for alternately switching and outputting a high frequency signal of channels A and B is connected to a channel connected between an input terminal and an output terminal for channels A and B, respectively. The A and B pin diodes are connected in series with the channel A and B pin diodes for impedance matching with an external circuit, and the channel A and B strip lines are formed in the inner layer of the circuit board. And a bias voltage is applied to the channel A and B pin diodes in order to alternately turn on and off the channel A and B pin diodes.

With this configuration, channel A
When the bias voltage for turning on the pin diode for channel A is applied to the diode, the high frequency signal of channel A input from the input terminal for channel A passes through the pin diode for channel A and the strip line for channel A, and the output terminal While output from channel B
When the bias voltage for turning on the pin diode for channel B is applied to the diode, the high frequency signal of channel B input from the input terminal for channel B passes through the pin diode for channel B and the strip line for channel B, and the output terminal Output from

Since the switch circuit is a symmetrical circuit and has the property that the series resistance of the pin diode changes by about 1Ω to 1KΩ, the source impedance seen from the output terminal at the time of channel switching is always constant. By setting the physical pattern length of the strip lines for channels A and B, impedance matching with an external circuit is achieved. Further, isolation between the two systems is achieved by the off resistance of the pin diodes for channels A and B.

In another dual PLL synthesizer of the present invention, a circuit block for channel A and a circuit block for channel B are physically separated from each other and are arranged on a multilayer substrate, and are wired between both circuit blocks. It is characterized in that a pattern of a power supply line and / or a signal line to be formed is formed on an inner layer, and an earth pattern for shielding the pattern is formed on at least the upper and lower layers.

In the case of such a configuration, channel A
The circuit block for channel B and the circuit block for channel B are physically separated from each other on the multilayer substrate, and the pattern of the power supply line and / or signal line to be routed between both circuit blocks is formed by the ground pattern. Because of the heavy shielding, the shielding effect between the channel A circuit block and the channel B circuit block is enhanced.

More preferably, the physical pattern length of the power supply line and / or signal line is 1/8 to electrical length.
It is desirable to set it to ４λ (λ: wavelength of a high-frequency signal). In this case, since the impedance between the connection points becomes high impedance, the shielding effect between the circuit block for channel A and the circuit block for channel B is further enhanced.

According to another dual PLL synthesizer of the present invention, a circuit block for channel A and a circuit block for channel B are physically separated on a circuit board, and a shared circuit is provided between the two circuit blocks. While the blocks are arranged, at least the circuit block for the channel A, the circuit block for the channel B, and the shared circuit block are covered with a shield case having a partition for partitioning the circuit block from each other. It is characterized by having.

In the case of such a configuration, channel A
The circuit block for channel A and the circuit block for channel B are physically separated and shielded, and the circuit block for channel A, the circuit block for channel B, and the common circuit block are partitioned using a shield case. The shielding effect between the circuit block for channel A and the circuit block for channel B is enhanced by a synergistic effect with the point of shielding.

The high frequency module of the present invention has a dual P
A substrate on which a high-frequency circuit such as an LL synthesizer is mounted has a basic configuration in which the substrate is mounted on a motherboard, and an electrode of an end face through hole formed by cutting out a side surface of the substrate and a land formed on the motherboard are provided. Wherein the substrate is surface-mounted and mounted on the motherboard by soldering.

In such a configuration, the board and the motherboard are mechanically joined by the solder provided between the electrodes of the end surface through holes and the lands formed on the motherboard.

More preferably, a power supply line and / or a signal line formed on the substrate is connected to an electrode of the end surface through-hole, and a space between the high-frequency circuit and the circuit of the mother board is formed by the end surface through-hole. It is desirable to be electrically connected via the electrodes.

In this case, not only the board and the mother board are mechanically joined by the solder between the electrode of the through hole on the end face and the land formed on the mother board, but also the high-frequency circuit on the board side. And the circuit of the motherboard are electrically connected.

Another high-frequency module according to the present invention has a shield case for covering and shielding components of a high-frequency circuit mounted on the substrate from above, and a foot for mounting the shield case is provided on the end face. The shield case is mounted on the motherboard by the soldering.

With this configuration, with the mounting foot of the shield case inserted into the through hole at the end face of the substrate, the electrode between the through hole at the end face and the land formed on the motherboard are soldered. When the board is mounted on the motherboard, the shield case is also mounted on the motherboard.

In another high-frequency module according to the present invention, a pattern of a power supply line and / or a signal line of the high-frequency circuit is formed on an inner layer of a multilayer substrate, and at least upper and lower layers thereof are provided for shielding the pattern. It is characterized in that it has a configuration in which an earth pattern is formed.

With such a configuration, the pattern of the power supply line and / or the signal line of the high-frequency circuit is double shielded by the ground pattern, and the shielding effect is enhanced. Since the total area of the ground pattern as a whole increases and the ground is strengthened, the characteristic impedance of the entire circuit mounted on the multilayer board is reduced. Further, since the ground pattern is formed on the multilayer substrate, the multilayer substrate itself functions as a shield plate for shielding components of the high-frequency circuit from the back side.

More preferably, it is desirable that the pattern formed in the inner layer of the multilayer substrate is connected to the electrode of the through hole at the end face. In this case, a sufficient adhesive strength between the electrode of the end surface through hole and the base material of the multilayer substrate is obtained.

In another high-frequency module according to the present invention, a pattern of a power supply line and / or a signal line formed in each layer on a multilayer substrate is electrically connected to each other through an electrode of the end face through hole. An electrode of a through hole for electrically connecting the patterns is formed near the end face through hole.

According to such a configuration, even when the electrode of the end face through hole is peeled off, the vicinity of the end face through hole on the pattern of the power supply line and / or the signal line formed in each layer on the multi-layer substrate. The electrical connection between the patterns of the power supply line and / or the signal line is maintained through the electrode of the through hole formed in the power line.

Another high-frequency module according to the present invention is characterized in that the end surface through-hole is formed in an elongated cross section.

In such a configuration, the area of the electrode formed in the end face through-hole is larger than when the end face through hole has a circular cross section, and the electrode between the end face through hole and the base material of the substrate becomes larger. The adhesive strength between them will increase.

The method for manufacturing a substrate for a high-frequency module according to the present invention is a method for manufacturing a substrate used for a high-frequency module, wherein a hole is formed at a position where an end face through hole is to be formed with respect to a substrate raw material. The inner peripheral surface of the hole is plated, and the peripheral portion of the hole in the substrate raw material is formed by punching using a mold or an NC having a sharp blade to form the end face through hole in the substrate. The substrate is cut along with the uncut side surface of the substrate along the uncut side surface of the substrate, and the substrate is folded along the V cut. It is characterized by being manufactured.

According to such a method, a mold or NC
At the time of punching using, a large stress is applied around the portion where the end face through hole is to be formed in the substrate raw material, but since the end face through hole has a long cross section,
The substrate can withstand this stress well. Further, since one side of the substrate is also cut by punching using a mold or NC having a sharp blade, a very sharp cut surface can be obtained.

When a rectangular substrate is manufactured, the substrate is inserted after cutting the side surface of the substrate on which the through-hole is formed by punching using a mold having a sharp blade or NC. It is desirable to cut the portion beyond the V-cut line at the same time.

In this case, if the substrate material is folded along the V cut, unnecessary portions can be easily removed from the substrate material.

[0042]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of a dual PLL synthesizer, a high-frequency module, and a method for manufacturing a high-frequency module substrate according to the present invention will be described with reference to the drawings.

FIG. 1 is a circuit configuration diagram of a dual PLL synthesizer, FIG. 2 is a circuit diagram of a switch circuit of the dual PLL synthesizer, and FIG. 3 is a diagram illustrating a state where a shield case is set on a multilayer board on which the dual PLL synthesizer is mounted. 4 is a plan view and a side view of the shield case with the cover removed, FIG. 4 is a schematic diagram for explaining the internal structure of the multilayer board, FIG. 5 is a bottom view of the multilayer board, and FIG. FIG. 7 is a partial perspective view of an end face through hole for a ground electrode showing a state of being surface-mounted on a motherboard, FIG. 7 is a partial perspective view of a multilayer board seen from the end face through hole for a signal electrode, and FIG. FIG. 7 is a diagram for explaining a method of manufacturing a multilayer substrate, and is a front view of a substrate raw material.

The dual PLL synthesizer described here is a high-frequency circuit used as a local oscillator or a carrier oscillator of a transceiver in a PHS base station, a PHS-compatible office cordless master unit, a premises base station, and is 1651.2 MHz here. It is possible to switch the channel of the high-frequency signal of up to 1658.4 MHz at a very high speed. This oscillation output is -9 dBm min,
The channel separation is 300 KHz, the lock-up time is within 600 μsec, and the channel switching time is within 20 μsec.

The circuit components of the dual PLL synthesizer are mounted on the surface of the multilayer board 30 shown in FIG. 3, and the mounted components are covered and shielded by a shield case 40 of a lower open metal box. However, FIG. 3 shows a state where the cover of the shield case 40 is removed.

The circuit configuration of the dual PLL synthesizer will be described with reference to FIG. The dual PLL synthesizer includes two frequency synthesizers 1a, 1a, and 1a for switching a high-frequency signal channel to be output at high speed.
b (corresponding to a PLL circuit) is provided for channels A and B. Attenuators 2a, 2b, amplifiers 3a, 3a are provided at each output stage of frequency synthesizers 1a, 1b.
b, attenuators 4a and 4b, and amplifiers 5a and 5b are sequentially connected to each other.

Each output signal of the amplifiers 5a and 5b is output to the switch circuit 7. The output stage of the switch circuit 7 includes an amplifier 81, a bandpass filter 82, a distributor 83
Are sequentially connected. Each output signal of the distributor 83 is output to a mixing circuit or the like in a transceiver (not shown).

In the figure, reference numeral 10 denotes a frequency synthesizer 1a, 1b
Is a power supply for a synthesizer that generates a power supply voltage to be supplied to the power supply. In the figure, reference numeral 20 denotes a switch power supply for generating a power supply voltage to be supplied to each subsequent circuit of the attenuators 2a and 2b. That is, the power supply voltage generated by the switch power supply 20 is supplied to each of the amplifier 81, the band-pass filter 82, and the distributor 83, while the amplifiers 3a, 3b, 5a, 5b, Each is supplied to the switch circuit 7.

The reason why the power supply 10 for the synthesizer is separated from the power supply 20 for the switch is to prevent the noise of the power supply 20 for the switch from flowing around.

The channel switching circuit 9 operates on the basis of a channel switching signal α (a digital signal for switching between channels A and B) introduced from a control circuit in the transceiver (not shown).
b. Bias switches 91a, 91
b comprises a transistor circuit which is turned on / off in response to the channel switching signal α.

That is, when the channel switching signal α indicates the channel A, the bias switch 91a is turned on, the voltage VC1 is output from the bias switch 91a, and the high frequency SW of the amplifiers 3a, 5a and the switch circuit 7 is output.
It is led to the circuit 71a. At this time, the bias switch 9
1b is off, and the voltage V
C1 is not output.

On the contrary, when the channel switching signal α indicates the channel B, the bias switch 9
1b is turned on, and the voltage V
C1 is output and guided to the amplifiers 3b, 5b and the high-frequency SW circuit 71b of the switch circuit 7. At this time, the bias switch 91a is turned off, and the bias switch 91a
Does not output the voltage VC1.

In short, the channel switching circuit 9 outputs the voltage VC1 at the timing indicated by the channel switching signal α.
Are output alternately.

When the voltage VC1 output from the bias switch 91a is supplied to the amplifiers 3a and 5a, both the amplifiers 3a and 5a are turned on, and the high-frequency signal output from the frequency synthesizer 1a is transmitted to the attenuator 2a and the amplifier 3a. The signal is output to the switch circuit 7 via the attenuator 4a and the amplifier 5a sequentially. At this time, since the voltage VC1 is not output from the bias switch 91b, the amplifiers 3b and 5b are both off, and the high-frequency signal output from the frequency synthesizer 1b is output from the attenuator 2b.
, But is cut off by the amplifier 3b and the subsequent attenuator 4b and amplifier 5b,
Is not output to

On the other hand, when the voltage VC1 output from the bias switch 91b is supplied to the amplifiers 3b and 5b, all the amplifiers 3b and 5b are turned on, and the high-frequency signal output from the frequency synthesizer 1b is converted to the attenuator 2b. , An amplifier 3b, an attenuator 4b, and an amplifier 5b. At this time, since the voltage VC1 is not output from the bias switch 91a, the amplifiers 3a and 5a are both off, and the high-frequency signal output from the frequency synthesizer 1a passes through the attenuator 2a, but the amplifier 3a and the attenuator in the subsequent stage 4a, is cut off by the amplifier 5a and is not output to the switch circuit 7.

The switch circuit 7 includes a high-frequency SW circuit 71a,
71b, etc., and bias switches 91a, 91b.
b according to the voltage VC1 output alternately from the
The output signals a and 5b are alternately switched and output. Specifically, the circuit configuration is as shown in FIG.

A capacitor C1a and a strip line S are connected to an input terminal in1 to which an output signal of the amplifier 5a is input.
While the La and pin diodes PDa are sequentially connected, the input terminal i to which the output signal of the amplifier 5b is input
n2 includes a capacitor C1b and a strip line SL
b and pin diodes PDb are sequentially connected. pin diode PDa, pin diode PDb
Are connected to each other and are connected to an output terminal out via a capacitor C, while being grounded via a resistor R.

The anode of pin diode PDa is connected to the output side of bias switch 91a via inductor La, and the bias switch side of inductor La is grounded via capacitor C2a. On the other hand, the anode of the pin diode PDb is connected to the output side of the bias switch 91b via the inductor Lb, and the bias switch side of the inductor Lb is grounded via the capacitor C2b.

When the voltage VC1 is output from the bias switch 91a, the voltage VC1 is supplied to the pi through the inductor La.
The bias voltage is applied to the anode of the n-diode PDa. Then, the pin diode PDa is turned on, and the output signal of the amplifier 5a is guided to the output terminal out via the capacitor C1a, the strip line SLa, the pin diode PDa, and the capacitor C sequentially.

On the contrary, the bias switch 91b
When the voltage VC1 is output from the, the voltage is applied as a bias voltage to the anode of the pin diode PDb via the inductor Lb. Then, the pin diode PDb is turned on, and the output signal of the amplifier 5b is output from the output terminal out via the capacitor C1b, the strip line SLb, the pin diode PDb, and the capacitor C sequentially.
It is led to.

The strip lines SLa and SLb are formed in an inner layer of the multilayer substrate 30. Stripline SL
Unlike the conventional example, a and SLb are not １ ／ λ strip lines, and their physical pattern lengths are set to values necessary for impedance matching with an external circuit. That is, the strip lines SLa and SLa are connected so that impedance matching between the amplifier 5a and the amplifier 81 and between the amplifier 5b and the amplifier 81 can be achieved.
The physical pattern length of b has been determined.

The strip lines SLa, SLb
Differs from the conventional example only in that impedance matching between the actually configured amplifiers is performed, so that the output does not necessarily have to be 50Ω matching.

The switch circuit 7 includes a high-frequency SW circuit 71a
Since the high-frequency SW circuit 71b and the high-frequency SW circuit 71b are the same circuit, they are symmetrical circuits. Further, the pin diode has a property that its series resistance changes to about 1 Ω to 1 kΩ when switching on and off. For this reason, when the output signals of the amplifiers 5a and 5b are switched, the source impedance seen from the amplifier 81 at the subsequent stage of the switch circuit 7 is always constant.

As described above, the amplifier 81, the band-pass filter 82, and the distributor 83 shown in FIG. 1 are sequentially connected to the output terminal out of the switch circuit 7. Therefore, when the channel switching signal α indicates the channel A, the high frequency signal of the channel A output from the frequency synthesizer 1a passes through the switch circuit 7, passes through the amplifier 81, the band-pass filter 82, and the distributor 83 sequentially. Output as outputs 1 and 2. On the other hand, when the channel switching signal α indicates the channel B, the high-frequency signal of the channel B output from the frequency synthesizer 1b passes through the switch circuit 7 and sequentially passes through the amplifier 81, the band-pass filter 82, and the distributor 83. Output 1,
Output as 2.

The band-pass filter 82 is provided for suppressing the image frequency and reducing the harmonics, while the distributor 83 is provided for the isolation between the outputs.

Unlike the case of the conventional example, the isolation amplifier is not used, and the area of the multilayer substrate 30 is smaller than that of the conventional example. Isolation is ensured.

First, the attenuators 2a, 2b, 4
Here, π-type (or T-type) resistance pads to which a small capacitance of about 0.5 pF is coupled are used as a and b.
When a simple π-type (or T-type) resistance pad is used, the isolation is limited to 20 dB. However, a capacitor is connected in series to the input side of the π-type (or T-type) resistance pad, and the resistance is about 0.5 pF. By coupling the minute capacitance, the isolation is greatly improved. In particular,
An isolation of 30 dB or more is secured between the frequency synthesizers 1a and 1b and the switch circuit 7.

As a result, the attenuators 2a, 2b, 4
With only a and 4b, the degree of isolation obtained by the isolation amplifier is realized. However, the high-frequency signal of the frequency synthesizer 1a or the like is
The C / N is attenuated by a, 2b, etc., and the C / N is degraded. However, since the amplifiers 2a, 5a, etc. are connected at the subsequent stage, the C / N is not significantly degraded to a particular problem. Further, since the isolation amplifier can be omitted, the current consumption can be reduced as compared with the case of the conventional example.

Secondly, the pin diodes PDa and PDa of the switch circuit 7 ensure the isolation of about 15 dB.

Third, by turning on / off the two-stage amplifier circuits of the amplifiers 2a and 5a, an ON / OFF of 40 dB or more is achieved.
An OFF ratio is obtained, and a total isolation (ON / OFF ratio) of 80 dB or more is secured. However, the two-stage amplifier circuit is a pin diode PD
This is because the isolation is insufficient with only a, so that, for example, a plurality of pin diodes PDa are connected in series. It doesn't matter.

Fourth, the arrangement of circuit components mounted on the multilayer substrate 30, the structure of the multilayer substrate 30, and the shield case 4
By making various design changes to 0, the electromagnetic isolation between the two systems, that is, the shielding effect is enhanced by integrating these, and the isolation between the two systems is improved.

First, the arrangement of circuit components of the dual PLL synthesizer mounted on the multilayer board 30 is as shown in FIG. That is, the circuit block BL1 for the channel A (the frequency synthesizer 1a, the amplifier 3
a, the amplifier 5a, etc.) and the circuit block BL3 for the channel B (the frequency synthesizer 1b, the amplifier 3b, the amplifier 5b, etc.) are physically separated from each other, and the shared circuit block BL2 ( The power supply 10 for the synthesizer, the power supply 20 for the switch, the high-frequency SW circuits 71a and 71b, the amplifier 81, the band-pass filter 82, the distributor 83 and the like are arranged.

With such an arrangement, there is a physical separation between the frequency synthesizer 1a and the frequency synthesizer 1a, and between the amplifiers 5a and 5b and the pin diodes PDa and b of the high-frequency SW circuits 71a and 71b. The electromagnetic isolation between the two systems is increased.

Further, inside the shield case 40, a partition 41 for partitioning the circuit block BL1 for the channel A, the circuit block BL3 for the channel B, and the shared circuit block BL2 from each other, and the frequency synthesizer 1
A partition 42 for partitioning the amplifiers a, 1b and the amplifiers 3a, 3b from each other, and a partition 43 for partitioning the amplifiers 3a, 3b and the amplifiers 5a, 5b from each other are provided. The frequency synthesizers 1a and 1b are PLLIC
And voltage-controlled oscillators. Each voltage-controlled oscillator is housed in a shield case.

When such a shield case 40 is used, especially between the frequency synthesizers 1a and 1b, the amplifiers 5a and 5b and the high-frequency SW circuit 71
As a result, the space between each of the pin diodes PDa and b is shielded by the partition 41, so that the electromagnetic isolation between the two systems is further increased.

The structure of the multilayer substrate 30 is as shown in FIG. Here, a multilayer substrate 30 having four layers is used. A land or the like for mounting a circuit component is formed on one layer, which is the uppermost layer of the multilayer substrate 30, and an earth pattern 31 is formed on the second layer, and an earth pattern 32 is formed on the lowermost four layers. Have been. Here, the ground patterns 31 and 32 are ground planes to enhance the shielding effect.

The three layers of the multilayer substrate 30 include the circuit block B
Not only signal lines for wiring the insides of L1, 2, and 3 but also signal lines and power supply lines extending between the circuit blocks BL1, 2, and 3 are formed. FIG. 4 schematically shows a power supply line 34 connected between power supply terminals of the amplifiers 5a and 5b mounted on one layer. The power supply line 34 and the like are surrounded by a ground pattern 33. Such a pattern of the power supply line 34 and the like is double shielded by the ground patterns 31 and 32 formed in the upper and lower layers, ie, two layers and four layers.

That is, the signal lines and power supply lines extending between the circuit blocks BL1, BL2 and BL3 are
As a result of being not only formed in the layers but also double-shielded by the ground patterns 31 and 32 of the two layers and the four layers, the electromagnetic isolation between the two systems is enhanced.

In addition, a power supply line, for example, a power supply line 34, which is wired between the circuit blocks BL1 and BL3, has a physical length of 1/8 to 1/4 λ including a signal line. The pattern length is set.

As a result, the impedance between the two connection points becomes high impedance, and the circuit blocks BL1 and B
Electromagnetic isolation with L3 is further enhanced, and a very high shielding effect is obtained as a whole. As a result of the ground being strengthened by the ground patterns 31 and 32, the characteristic impedance of the entire mounted circuit is suppressed to be low, and it is naturally less likely to be affected by external noise.
In addition, the ground patterns 31, 32, 33, and the like function as heat sinks, and a secondary effect of suppressing a temperature rise of the dual PLL synthesizer can be obtained.

The dual PLL synthesizer having the above configuration is actually mounted on the motherboard 60 (see FIG. 6) by surface mounting, and the whole is called a dual PLL synthesizer module.

Hereinafter, a dual PLL synthesizer module will be described as an embodiment of the high-frequency module of the present invention.

In order to mount the multilayer board 30 on which the dual PLL synthesizer is mounted on the motherboard 60, two types of end face through holes 35 and 36 are formed on each side face of the multilayer board 30 as shown in FIG. Have been.

The end surface through hole 35 is formed by cutting out the side surface of the multilayer substrate 30 and forming a cross section in the shape of a horizontally long hole. As shown in FIG.
51 are formed and used for the ground electrode.

On the other hand, the end face through-hole 36 is formed by cutting out the side surface of the multilayer substrate 30 as shown in FIG. 5 and forming a cross section in a vertically long hole shape, as shown in FIG. Is formed with a land electrode 362 and is used as a signal electrode (partly including a power supply).
The left end through hole 36 in FIG. 5 is for input, and the right end through hole 36 for output is in FIG.

The cross-sections of the end surface through-hole 35 and the end surface through-hole 36 are not circular but elongated, mainly because the base material (insulating layer of the substrate) of the multilayer substrate 30 and the electrodes 351 and 361 with lands are formed. The reason for this is to increase the bonding strength by increasing the bonding area so that the electrodes 351 and 361 with lands are not easily separated.

In order to further increase the adhesive strength of the electrode with land 351, the ground pattern 37 formed on one layer of the multilayer substrate 30, similarly to the ground patterns 31, 33, 32 formed on two, three, and four layers Are brought into contact with the land-attached electrodes 351 of the end face through holes 35, respectively. That is, the ground patterns 36, 31, 33, and 32 of each layer are electrically connected via the electrodes 351 with lands of the end surface through holes 35.

On the other hand, similarly to the above, the signal lines formed on the three layers of the multi-layer substrate 30 are brought into contact with the land-attached electrodes 361, and the land-attached electrodes 351,
The adhesive strength of No. 1 is increased. Also in this case, the signal lines 371 formed in one layer and the signal lines formed in three layers or the like are electrically connected via the electrodes 351 with lands.

However, as shown in FIG. 5, since the end face through hole 36 is smaller than the end face through hole 35, the end face through hole 36 has a smaller adhesive strength than the end face through hole 35. Therefore, even if the land-attached electrode 351 is partially peeled off, the signal flow on the signal line is ensured at least on the signal line 371 and near the end face through hole 36 as shown in FIG. A normal through-hole electrode 3712 is formed. As described above, the electrical connection between the inner layer and the outer layer of the multilayer substrate 30 is ensured on the signal line, thereby improving the reliability of the dual PLL synthesizer module regarding the electrical connection.

On the other hand, on the surface of the motherboard 60, FIG.
A land pattern 61 and the like are formed as shown in FIG.
The land pattern 61 is an earth pattern, but other than this, a signal pattern and the like are also formed. An electrical connector is provided on the back surface of the motherboard 60. The electrical connector and the landed electrode 3 of the end face through hole 35 are provided.
Motherboard 6 to electrically connect the
A predetermined land pattern is formed on the surface of the zero.

The mother board 60 and the multi-layer board 3 as described above
0, and for example, the multilayer board 30 is attached to the motherboard 6 by reflow soldering using cream solder.
0 and surface-mounted. End face through hole 3
Since the solder rises at 5, 36, the multilayer board 30 and the motherboard 60 are securely joined.

At this time, the shield case 40 is attached together. The shield case 40 is a multilayer substrate 30
6, and the lower end thereof has the same pitch as the end face through hole 35, as shown in FIG.
4 are formed.

That is, the end surface through hole 3 of the multilayer substrate 30
5, the mounting feet 44 of the shield case 40 are inserted. In this state, the motherboard 60 and the multilayer board 30 are aligned, and the multilayer board 30 is mounted on the motherboard 60 by reflow soldering or the like. , Solder rises in the end surface through holes 35 and 36, and the multilayer substrate 3
0 and the motherboard 60 are joined, and the mounting feet 44 of the shield case 40 are also connected to the end face through holes 3.
5 land electrodes 351.

As described above, not only the multi-layer board 30 but also the shield case 40 is mounted on the motherboard 60 by one soldering, so that the assembling work becomes very simple.

In addition, the motherboard 60 such as the multilayer board 30
When the mounting on the motherboard 60 is completed, any special electrical wiring is performed since the land electrodes 351 and 361 on the multilayer substrate 30 and the electrical connectors on the motherboard 60 are electrically connected through the land patterns on the motherboard 60. No need.

In the case of the conventional example, for the output signal of the dual PLL synthesizer, the signal is transferred between the multilayer board 30 and the motherboard 60 using a coaxial cable or the like. This eliminates the need to connect a coaxial cable or the like to a dedicated connector.

The fact that there is no need to use a dedicated connector or the like means that signals can be transferred without changing the characteristic impedance of the signal line, and the land electrodes 351 and 361 on the multilayer substrate 30 and the mother board 60 In a state where high frequency matching is achieved with the land pattern, insertion loss (insert loss) can be minimized.

In the case of the conventional example, the lower cover is indispensable to shield the dual PLL synthesizer. However, here, the lowermost ground pattern 32 of the multilayer substrate 30 is used as a ground plane. Since the characteristics equivalent to the shield can be realized on the substrate 30 itself, the lower cover is not required. Accordingly, the work of attaching the lower cover has become unnecessary.

Therefore, as compared with the case of the conventional example, not only the electrical characteristics of the dual PLL synthesizer are improved as described above, but also the assembly work of the dual PLL synthesizer module is greatly simplified, and accordingly, Manufacturing costs have dropped significantly. In addition, the isolation amplifier, the dedicated connector, the lower panel, and the like are omitted, and it is not necessary to make a hole for mounting the shield case 40 on the mother boat 30, and only the land pattern is formed. The cost of a dual PLL synthesizer module has been greatly reduced.

In addition, it is not necessary to mount an isolation amplifier, a dedicated connector, etc. on the multilayer substrate 30. The strip lines SLa, b of the switch circuit 7 are formed in the inner layer of the multilayer substrate 30, and the switch circuit 7 is The point that the circuit block BL1 for the channel A and the circuit block BL2 for the channel B are physically close to each other by the degree that the isolation between the two systems is improved and the shielding effect is enhanced, because they are integrated on the substrate 30. In this regard, the shared circuit block BL3 is replaced with the circuit block BL1 for channel A and the circuit block BL for channel B.
The dual PLL synthesizer module itself is extremely compact due to the point that it is placed between the dual PLL synthesizer module and the point that the circuit components are mounted on one side of the multilayer board 30 and the thickness of the module itself is thinner than that of both sides. Was done.

More specifically, in the case of the conventional example, the capacity was limited to about 30 ml, but the capacity can be reduced to 17 ml.

Next, a method of manufacturing the multi-layer substrate 30 used in such a dual PLL synthesizer module will be described with reference to FIG.

First, a substrate raw material 1 capable of taking a total of four square multilayer substrates 30 is prepared. First, holes are formed at positions where the end face through holes 35 and 36 are to be formed in the substrate raw material 1 using NC or the like for forming through holes. Due to the size of the end face through hole 36, it is sufficient to make only one hole per hole. However, since the end face through hole 35 is horizontally long and large, three holes are made per one here. Before and after this, another through hole (not shown) is opened in the substrate raw material 1 using the same NC or the like. Thereby, end face through holes 35 and 36 are formed on each side surface of each multilayer substrate 30.

Thereafter, the inner peripheral surface of the hole formed in the substrate raw material 1 is plated. As a result, land electrodes 351 and 361 are formed in the end surface through holes 35 and 36 of each multilayer substrate 30, respectively.

Then, in the figure of the substrate raw material 1, 11, 12, 1
The parts 3 and 14 are cut by punching using a mold having a sharp blade or NC. At this time, the multilayer substrate 30
Are cut at the same time.

Since holes are formed in the portions 11, 12, 13, 14 and the like by punching using a mold having a sharp blade or NC, the cut surfaces of the two side surfaces of the multilayer substrate 30 are very sharp. Yes, and therefore does not require a polishing step or the like. In addition, since the end surface through holes 35 and 36 are not circular in cross section but in a long hole shape, the through hole cut portion of the multilayer substrate 30 can sufficiently withstand the stress when cutting with a mold or the like.

Then, on the surface of the substrate raw material 1, the multilayer substrate 3
A total of four V-cuts 16 are inserted along the 0 uncut side surface. Then, when the substrate raw material 1 is folded along the V cut 16, four multilayer substrates 30 are obtained from the substrate raw material 1.

Since the two side surfaces of the multilayer substrate 30 have already been cut by punching using a mold or NC, only the direction shown in the figure is sufficient for the location where the V cut 16 is to be inserted. Of the parts 11 and 12 to be drilled,
The reason why the portions 11 and 121 exceed the line of the V-cut 16 is to prevent unnecessary portions from remaining on the multilayer substrate 30 when the original substrate 1 is folded along the V-cut 16. .

Since the multilayer substrate 30 can be efficiently produced by such a method, the manufacturing cost can be reduced, and in this regard, the cost of the dual PLL synthesizer module can be reduced.

The dual PLL synthesizer of the present invention does not necessarily need to be mounted on a motherboard, and may take a form in which circuit components are mounted on a single-layer board. Further, the high-frequency module of the present invention is not necessarily limited to the dual PLL synthesizer module, and it is naturally applicable to a module equipped with another high-frequency circuit.

[0111]

As described above, in the case of the dual PLL synthesizer according to claim 1 of the present invention, isolation between two systems is achieved without using an isolation amplifier. Since the attenuator itself is smaller and less expensive than the isolation amplifier, the cost of parts is reduced by the amount of the isolation amplifier, and the substrate is reduced. In addition, since the isolation amplifier is omitted, current consumption is reduced, and accordingly, a power supply having a large capacity is not required. As a result, the size and cost of the dual PLL synthesizer can be reduced.

According to the dual PLL synthesizer according to the second aspect of the present invention, unlike the conventional example,
A switch circuit that alternately switches and outputs high-frequency signals of channels A and B does not use a λλ strip line, but instead uses a strip line for channels A and B and forms it on an inner layer of a circuit board. Since the isolation between the two systems is achieved by the pin diodes for the channels A and B, the circuit becomes a small and very simple circuit, and can be integrated with the circuit board. As a result, the size and cost of the dual PLL synthesizer can be reduced.

In the case of the dual PLL synthesizer according to claim 3 of the present invention, the shielding effect between the circuit block for channel A and the circuit block for channel B is enhanced, so that the shielding effect is enhanced. By this amount, it is not necessary to physically separate the two circuit blocks from each other on the substrate by a large amount, and accordingly, the substrate can be reduced in size. As a result, the size and cost of the dual PLL synthesizer can be reduced.

In the case of the dual PLL synthesizer according to claim 4 of the present invention, compared with the case of claim 3,
Since the shield effect between the circuit block for channel A and the circuit block for channel B is further enhanced, the size and cost of the dual PLL synthesizer can be further reduced.

In the case of the dual PLL synthesizer according to the fifth aspect of the present invention, a common circuit block is arranged between the circuit block for channel A and the circuit block for channel B on the circuit board, and the shield case is used. Since each circuit block is shielded by partitioning, not only a sufficiently high shielding effect can be obtained between the circuit block for channel A and the circuit block for channel B, but also the mounting components can be arranged well. In that respect, the circuit board can be made smaller.
As a result, the size and cost of the dual PLL synthesizer can be reduced.

In the case of the high-frequency module according to claim 6 of the present invention, after the substrate is surface-mounted on the motherboard, the electrodes of the through-holes formed on the side surfaces of the substrate and the electrodes formed on the motherboard are formed. By soldering between the land and the board, the board and the motherboard are mechanically joined, so when mounting the board on the motherboard, it is possible to use reflow soldering etc. using cream solder , The installation work becomes very simple. As a result, not only the manufacturing cost is reduced, but also a special component for mounting the substrate on the motherboard is not required, so that the cost of the high-frequency module can be reduced.

In addition, since the circuit components of the high-frequency circuit are mounted on the upper surface of the substrate, the thickness is reduced as compared with the case of the conventional example of double-sided mounting. The size can be reduced.

In the case of the high-frequency module according to claim 7 of the present invention, the board and the motherboard are mechanically joined by the solder between the electrodes of the end surface through holes and the lands formed on the motherboard. not only,
Since the high-frequency circuit on the substrate and the circuit on the motherboard are electrically connected, a special component for electrically connecting the high-frequency circuit on the substrate and the circuit on the motherboard is not required.

In particular, it is not necessary to use a coaxial cable to transfer signals between the two circuits, and accordingly, it becomes unnecessary to mount a dedicated connector having a characteristic impedance of 50Ω on the substrate and the motherboard. .
Therefore, the cost of parts can be reduced, and the size of the substrate and the like can be reduced. As a result, the size and cost of the high-frequency module can be reduced.

Further, the fact that there is no need to use a coaxial cable means that signals can be transferred between the two circuits without changing the characteristic impedance of the signal line. When the characteristic impedance is 5
It becomes possible to minimize the insertion loss (insertion loss) of the dedicated connector having 0Ω.

In the case of the high-frequency module according to the eighth aspect of the present invention, with the mounting foot of the shield case inserted in the through hole of the end face of the substrate, the gap between the electrode of the through hole and the land formed on the mother board is provided. When the board is mounted on the motherboard by soldering, the shield plate is also mounted on the motherboard at the same time, so the work of mounting the shield plate becomes very simple, the manufacturing cost is low, and the high frequency module is Cost can be reduced.

Further, unlike the case of the conventional example, it is not necessary to form a through hole on the motherboard for inserting the mounting foot of the shield case or to form a land around the through hole. Since the land located near the edge of the motherboard is not required, the size of the motherboard can be reduced, and the size of the high-frequency module can be reduced.

According to the high-frequency module of the ninth aspect of the present invention, not only the shielding effect of the power supply line and / or the signal line pattern of the high-frequency circuit is enhanced, but also the total area of the ground pattern as a whole is increased, and the ground is reduced. Since the configuration is strengthened and the characteristic impedance of the entire circuit mounted on the substrate is reduced, the circuit is less susceptible to external noise. Further, the ground pattern also plays a role as a heat sink, but since the total area of the ground pattern as a whole increases, the temperature rise of the module can be effectively suppressed.

Further, since a ground pattern is formed on the multilayer substrate, and the multilayer substrate itself functions as a shield case for shielding the components of the high-frequency circuit from the back side thereof, the conventional example is used. Unlike the case, the lower cover is not required. Since the operation of attaching the lower cover can be omitted, the manufacturing cost is reduced, and the cost of the high-frequency module can be reduced.

In the case of the high frequency module according to the tenth aspect of the present invention, the structure is such that the adhesive strength between the electrode of the end face through-hole and the base material of the multilayer substrate is sufficiently obtained. Is not easily peeled off, and not only is the board and motherboard securely bonded,
The electrical connection between the high-frequency circuit on the substrate side and the circuit on the motherboard is ensured, and the reliability of the module is improved.

In the case of the high frequency module according to the eleventh aspect of the present invention, even when the electrode of the through hole at the end face is peeled off, the pattern of the power supply line and / or the signal line formed on each layer on the multi-layer substrate can be reduced. Through the electrode of the through hole formed near the end face through hole,
Since the electric connection between the patterns of the power supply line and / or the signal line over each layer is maintained,
The electrical connection between the patterns of the power supply line and / or the signal line over each layer is ensured, and the reliability of the module is improved.

In the case of the high-frequency module according to the twelfth aspect of the present invention, the area of the electrode formed in the end face through hole is larger than when the end face through hole has a semicircular cross section, and the electrode of the end face through hole is formed. It is configured so that the adhesive strength between the substrate and the base material of the substrate increases, so that the electrodes of the end face through holes are not easily peeled off, and not only is the board and the motherboard securely joined, The electrical connection between the high-frequency circuit on the board side and the circuit on the motherboard is ensured, and the reliability of the module is improved.

According to the method of manufacturing a substrate for a high-frequency module according to the thirteenth aspect of the present invention, since a plurality of substrates can be manufactured simultaneously from a substrate raw material without producing defective products, Lower costs. Also,
One side or the like of the substrate is cut by punching using a die or NC having a sharp blade, so that the cut surface becomes a very sharp surface, and a polishing step thereafter becomes unnecessary. Also in this respect, the manufacturing cost is reduced. as a result,
The cost of the high-frequency module can be reduced.

In the method for manufacturing a high-frequency module substrate according to the fourteenth aspect of the present invention, if the substrate material is folded along the V-cut, unnecessary portions can be easily removed from the substrate material. Therefore, the manufacturing cost is reduced, and as a result, the cost of the high-frequency module can be reduced.

[Brief description of the drawings]

FIG. 1 is a diagram for explaining an embodiment of a method for manufacturing a dual PLL synthesizer, a high-frequency module, and a substrate for a high-frequency module according to the present invention;
FIG. 3 is a circuit configuration diagram of the synthesizer.

FIG. 2 is a circuit diagram of a switch circuit of the dual PLL synthesizer.

FIG. 3 is a plan view and a side view showing a state in which a shield case is set on a multilayer substrate on which a dual PLL synthesizer is mounted, with a cover of the shield case removed;

FIG. 4 is a schematic diagram for explaining an internal structure of a multilayer substrate.

FIG. 5 is a bottom view of the multilayer substrate.

FIG. 6 is a partial perspective view showing a state in which a multilayer substrate is surface-mounted on a motherboard as viewed from an end surface through hole for an earth electrode.

FIG. 7 is a partial perspective view of the multilayer substrate as viewed from a through hole at an end surface for a signal electrode.

FIG. 8 is a diagram for explaining a method of manufacturing a multilayer substrate, and is a front view of a substrate raw material.

FIG. 9 is a diagram for explaining a conventional dual PLL synthesizer, and is a circuit configuration diagram of the dual PLL synthesizer.

FIG. 10 is a circuit diagram of a switch circuit of the dual PLL synthesizer.

[Explanation of symbols]

 1a, 1b Frequency synthesizer 2a, 2b, 4a, 4b Attenuator 3a, 3b, 4a, 5b Amplifier 7 Switch circuit 9 Channel switching circuit 30 Multilayer board 40 Shield case

Claims (14)

[Claims] 1. Two PLL circuits are provided for channels A and B in order to switch a channel of a high-frequency signal to be output at high speed, and a high-frequency signal generated by each of the PLL circuits is converted based on a channel switching signal. A PLL attenuator for channels A and B, each connected to the output side of the PLL circuit and coupled with a microcapacitor for achieving isolation between two systems, comprising: An amplifier for channels A and B respectively connected to the output side of the attenuator, a switch circuit for switching and outputting signals respectively output from the amplifiers, and an amplifier for channel A when the channel switching signal indicates channel A Is turned on from off and the output signal of the amplifier is selected. A channel switching circuit that activates the channel B amplifier from off to on while indicating channel B while operating the switch circuit so as to select the output signal of the amplifier. And a dual PLL synthesizer. 2. Two PLL circuits are provided for channels A and B in order to switch the channel of a high-frequency signal to be output at a high speed, and the high-frequency signals generated by the PLL circuits are converted based on the channel switching signal. In a dual PLL synthesizer that alternately switches and outputs signals, a switch circuit that alternately switches and outputs high-frequency signals of channels A and B includes a channel A connected between an input terminal for channels A and B and an output terminal. , B pin diodes, and strip lines for channels A and B which are respectively connected in series with the channel A and B pin diodes for impedance matching with an external circuit and are formed in the inner layer of the circuit board. The pin diodes for channels A and B are turned on and off alternately. Channels A and B to switch
A dual PLL synthesizer characterized in that a bias voltage is applied to a pin diode for use. 3. Two PLL circuits are provided for channels A and B in order to switch the channel of the high-frequency signal to be output at a high speed, and the high-frequency signals respectively generated by the PLL circuits are converted based on the channel switching signal. In a dual PLL synthesizer that alternately switches and outputs signals, a circuit block for channel A and a circuit block for channel B are physically separated from each other and are arranged on a multilayer substrate, and should be wired between both circuit blocks. A dual PLL, wherein a pattern of a power supply line and / or a signal line is formed on an inner layer, and an earth pattern for shielding the pattern is formed on at least upper and lower layers thereof.
Synthesizer. 4. The dual PLL synthesizer according to claim 3, wherein a physical pattern length of the power supply line and / or the signal line is ８ to λλ in electrical length. 5. Two PLL circuits are provided for channels A and B in order to switch a channel of a high-frequency signal to be output at a high speed, and the high-frequency signals generated by the PLL circuits are converted based on the channel switching signal. And a circuit block for channel A and a circuit block for channel B are physically separated from each other on a circuit board, and a shared circuit block is provided between both circuit blocks. And a shield case having a partition for partitioning at least the circuit block for the channel A, the circuit block for the channel B, and the shared circuit block. A dual PLL synthesizer, characterized in that: 6. A high-frequency module in which a board on which a high-frequency circuit such as a dual PLL synthesizer is mounted is mounted on a motherboard. A high-frequency module, wherein the substrate is surface-mounted on the motherboard by soldering to a land. 7. A power supply line formed on the substrate and / or
Alternatively, a signal line is connected to an electrode of the end face through-hole, and the high-frequency circuit and the circuit of the motherboard are electrically connected via the electrode of the end face through hole. The high-frequency module as described. 8. A high-frequency module having a shield case for covering and shielding components of a high-frequency circuit mounted on the board from above, wherein mounting feet of the shield case are inserted into the end face through holes. ,
The high-frequency module according to claim 6, wherein the shield case is mounted on the motherboard by the soldering. 9. A structure in which a pattern of a power supply line and / or a signal line of the high-frequency circuit is formed on an inner layer of a multilayer substrate, and at least upper and lower layers thereof are formed with an earth pattern for shielding the pattern. 9. The high frequency module according to claim 6, wherein: 10. The high-frequency module according to claim 9, wherein a pattern formed on an inner layer of said multilayer substrate is connected to an electrode of said end face through hole. 11. A pattern of a power supply line and / or a signal line formed in each layer on a multilayer substrate is electrically connected to each other through an electrode of said end face through-hole, and in the vicinity of said end face through hole on said pattern. 11. The high-frequency module according to claim 6, further comprising a through-hole electrode for electrically connecting the patterns. 12. The high-frequency module according to claim 6, wherein said end face through-hole is formed in an elongated hole shape in cross section. 13. A method of manufacturing a substrate used in a high-frequency module according to claim 12, wherein after forming a hole at a position where an end face through hole is to be formed with respect to the substrate raw material,
By plating the inner peripheral surface of the hole and punching using a mold or an NC having a sharp blade, the peripheral portion of the hole in the substrate raw material is formed with the end surface through hole in the substrate. The substrate is cut along with the uncut side surface of the substrate along the uncut side surface of the substrate, and the substrate is folded along the V cut. A method for manufacturing a substrate for a high-frequency module, characterized by being manufactured. 14. A method of manufacturing a substrate for a high-frequency module according to claim 13, wherein a square substrate is manufactured by punching using a die having a sharp blade or NC. A method for manufacturing a substrate for a high-frequency module, characterized in that, when cutting the side surface of the side, a portion that goes beyond a V-cut line to be inserted thereafter is also cut.