JPH11112096A - Semiconductor laser device, and optical communication system using the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To get a low-threshold current and a high slope efficiency property, covering a wide temperature range, by making an active layer include a layer whose lattice conforms to that of a GaAs substrate and which has specified components. SOLUTION: A buffer layer 2, a clad layer 3, a light shut-in layer 4, an active layer 5, a light shut-in layer 6, a clad layer 7, and a contact layer 8 are made in order on an n-type GaAs substrate 1. The active layer 5 is made, including an InNx ASy P1-x-y (0<x<1, 0<=y<1) layer whose lattice conforms to that of a GaAs substrate 1, and has such well structure that a pair of GaAs barrier layers 11 catch an InNAsP well layer 12. The oscillatory wavelength of the laser is set with the composition ratio and the thickness of the InNAsP well layer 12. The band offset between the GaAs barrier layer 11 and the side of the conductive band of the InNAsP well layer 12 can be made large, and the deterioration of properties is prevented, performing the shut in of electrons to the rise of ambient temperature.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor laser device suitable for a light source for optical communication and an optical communication system using the same.

[0002]

2. Description of the Related Art Conventionally, an InP substrate has been used as a substrate in a semiconductor laser device used as a light source for optical communication, and an InGaAsP mixed crystal has been used as a material for an active layer. This is because the InGaAsP mixed crystal has band gap energies in the 1.3 μm band and the 1.55 μm band which are low loss bands of the optical fiber.

FIG. 1 shows a conventional example of a semiconductor laser device for optical communication.
0 is shown.

The semiconductor laser device shown in FIG. 10 is an n-type InP
The substrate includes a substrate 101 and a mesa-shaped laminated structure provided on the substrate 101. This mesa-like laminated structure has an n-type In
It includes a GaAsP light confinement layer 102, an InGaAsP active layer 103, and a p-type InP cladding layer 104. A p-type InP current block layer 105 and an n-type InP current block layer 106 are buried on both sides of the mesa-shaped laminated structure. The p-type InP buried layers 107 and p
A type InGaAsP contact layer 108 is provided. On the p-type InGaAsP contact layer 108,
An insulating film 109 having a stripe-shaped opening is deposited, and an An / Zn electrode 110 and a Ti / Au electrode 111 are provided thereon. Au on the back surface of the substrate 101
/ Sn electrode 112 is provided.

[0005]

SUMMARY OF THE INVENTION As shown in FIG.
The nGaAsP / InP-based semiconductor laser device has a problem that the threshold current and the luminous efficiency greatly change with the change of the ambient temperature. For this reason, countermeasures such as keeping the temperature of the semiconductor laser device constant by using a Peltier element or the like have been taken. However, this has been one of the factors that increase the price of the laser module.

The reason why the characteristics of an InGaAsP / InP-based semiconductor laser device change greatly with changes in ambient temperature is that the band offset (ΔEc) on the conduction band side is very small. This will be described with reference to FIGS.

FIGS. 11A and 11B show a case where the active layer has a quantum well structure including a barrier layer and a well layer. When ΔEc of the barrier layer and the well layer is as small as about 100 meV, as shown in FIG. 11A, electrons are sufficiently confined in the well layer which is a light emitting region at a low temperature, but when the ambient temperature rises, FIG. As shown in (b), electrons easily overflow from the well layer which is a light emitting region due to thermal energy, and do not contribute to light emission. Therefore, as shown in FIG. 11C, the threshold current increases, and the slope efficiency decreases.

In an InGaAsP / InP-based semiconductor laser device, ΔEc is about 100 meV and AlGaAs
ΔEc is 200 to 200 / GaAs semiconductor laser device
Although it is 300 meV, it is very small.

The present invention has been made in view of the above problems, and has as its main object to provide a semiconductor laser device having a low threshold current and a high slope efficiency over a wide temperature range, and an optical communication system including the same. Is to provide.

[0010]

In order to achieve the above object, the present invention provides a GaAs substrate, a GaP substrate, or a GaAs substrate.
InN lattice-matched to i board _{x As y P 1-xy (} 0 <x <
1, 0 ≦ y <1) layer is used for the active layer, thereby oscillating in the wavelength band for optical communication and ΔEc of 200 me
V or more is realized.

According to a first aspect of the present invention, there is provided a semiconductor laser device comprising: a GaAs substrate;
A semiconductor laser device comprising a laminated structure formed on a substrate, the laminated structure includes an active layer for light emission, the active layer, InN _x As _y that is lattice matched to the GaAs substrate P _1-xy (0 <x <1, 0 ≦ y <1) layers are included.

[0012] Thereby, for long-distance optical communication using a GaAs substrate (band gap energy is 1.1 to 1.6).
(μm band) semiconductor laser can be realized. This is GaA
InN lattice-matched to s substrate _{x As y P 1-xy (} 0 <x <
This is because the band gap energy of the 1,0 ≦ y <1) layer is reduced due to the bowing effect and exhibits an optimum value for laser oscillation in the 1.1 to 1.6 μm band. _{Further, InN x As y P 1-} xy (0 by Boeing effect <x <1,0 ≦ y
<1) Since the decrease in the conduction band level of the layer is more remarkable than the decrease in the valence band level, ΔEc can be increased to 200 meV or more in the laminated structure. As a result, even if the energy of carriers increases due to an increase in environmental temperature or the temperature of the semiconductor laser device itself, an increase in the number of carriers overflowing from the active layer is suppressed, and performance with excellent temperature characteristics is exhibited.

According to a second aspect, in the first aspect, the active layer has a quantum well structure composed of a well layer and a barrier layer, and the well layer is formed of the InN.
It is preferably formed from _{x As y P 1-xy (} 0 <x <1,0 ≦ y <1) layer.

Thus, carriers in the well layer behave as quantum mechanical waves, and laser emission can be achieved with a smaller injection current.

According to a third aspect of the present invention, in the second aspect, the barrier layer is made of AlGaInP, AlGaAs.
It may be formed of any material selected from the group consisting of s, GaAs, InGaAsP, and InGaP.

According to a fourth aspect of the present invention, in the first aspect, the laminated structure is located above the active layer, and has a cladding layer of the same conductivity type as the substrate located below the active layer. The semiconductor device may further include a conductive type clad layer and a contact layer different from the substrate, and an electrode that is in contact with the contact layer in a stripe-shaped region may be disposed on the contact layer.

As a result, the injection current is confined in the stripe-shaped region, and the lateral confinement of the carrier is realized.

According to a fifth aspect of the present invention, in the fourth aspect, in the laminated structure, a portion including the cladding layer and the contact layer having a conductivity type different from that of the substrate is processed into a ridge shape. Is also good.

As a result, the effective refractive index changes in the lateral direction between the ridge portion and the portions on both sides of the ridge portion, thereby realizing lateral confinement of light.

According to a sixth aspect of the present invention, in the first aspect, the laminated structure is located above the active layer, and a cladding layer of the same conductivity type as the substrate located below the active layer. The substrate further includes a cladding layer of a conductivity type different from that of the substrate, wherein the cladding layer of a conductivity type different from the substrate has a ridge portion, and on both sides of the ridge portion, the same as the substrate. A conduction type current block layer is disposed, and a conduction type buried layer different from the substrate is disposed on the current block layer.

As a result, confinement of carriers and light is realized, and the reactive current is reduced by the function of the current blocking layer.

According to a seventh aspect, in the fourth aspect, the cladding layer is made of GaAs, AlGa.
It may be formed of any material selected from the group consisting of As, InGaP, and InGaAsP.

According to an eighth aspect of the present invention, in the sixth aspect, the cladding layer, the current blocking layer and the buried layer are formed of GaAs, AlGaAs, InGaP,
It may be formed from any material selected from the group consisting of nGaAsP.

According to a ninth aspect of the present invention, in the first aspect, the laminated structure is located above the active layer and the same conductive type clad layer as the substrate located below the active layer. The substrate comprises a cladding layer of a different conductivity type, and is disposed above the cladding layer of a different conductivity type from the substrate, a current blocking layer of the same conductivity type as the substrate, The semiconductor device may further include a buried layer of a conductivity type different from that of the substrate disposed above, and a part of the buried layer may be in contact with a cladding layer of a conductivity type different from the substrate in the stripe-shaped region.

As a result, the confinement of carriers and light is realized, and the reactive current is reduced by the function of the current blocking layer.

As described in claim 10, claim 9
In the above, the cladding layer, the current blocking layer, and the buried layer are made of GaAs, AlGaAs, InGaP.
And InGaAsP may be formed of any material selected from the group consisting of InGaAsP and InGaAsP.

[0027] As described in claim 11, claim 1
In, the laminated structure comprises a cladding layer of the same conductivity type as the substrate located below the active layer, a cladding layer and a contact layer of a conduction type different from the substrate located above the active layer A portion including the GaAs substrate, a portion including the cladding layer and the active layer, is processed into a mesa, and both sides of the mesa are different from the substrate in a conductivity type first current blocking layer and the substrate. And a second current blocking layer of the same conductivity type as
A buried layer of a conductivity type different from that of the substrate may be disposed above the current blocking layer.

As a result, the two current blocking layers of different conductivity types narrow the injection current into the mesa, efficiently realize the confinement of carriers and light, and reduce the reactive current.

As set forth in claim 12, claim 1
1, the cladding layer, the current blocking layer and the burying layer are made of GaAs, AlGaAs, InGa.
It may be formed of any material selected from the group consisting of P and InGaAsP.

[0030] As described in claim 13, claim 1
In the laminated structure, a semiconductor multilayer mirror of the same conductivity type as the substrate located below the active layer, and a semiconductor multilayer mirror of a different conductivity type from the substrate located above the active layer The pair of semiconductor stacked structures may constitute a vertical resonator, and the laser light generated in the resonator may be extracted in a direction perpendicular to the substrate.

As a result, a surface-emitting type semiconductor laser that emits laser light in a wavelength band suitable for optical communication is realized.

As set forth in claim 14, claim 1
In 3, the at least one of the pair of semiconductor multilayer mirrors may have a stacked structure of AlAs and GaAs.

As a result, the high-reflectivity multilayer mirror can be replaced with Ga
It is possible to grow on an As substrate, and a high performance surface emitting laser can be provided.

As set forth in claim 15, claim 1
In 3, the at least one of the pair of semiconductor multilayer mirrors may have a stacked structure of AlGaAs and GaAs.

According to another aspect of the present invention, there is provided a semiconductor laser device including a GaP substrate and a laminated structure formed on the GaP substrate, wherein the laminated structure is Includes an active layer for light emission, wherein the active layer has an I.sub.
_{nN x As y P 1-xy} (0 <x <1,0 ≦ y <1) containing the layer.

Thus, for long-distance optical communication using a GaP substrate (band gap energy of 1.1 to 1.6 μm).
m band) semiconductor laser is realized. _{This, InN x As y P 1-} xy (0 lattice-matched to GaP substrate <x <1, 0 ≦
This is because the band gap energy of the y <1) layer is reduced due to the bowing effect and exhibits an optimum value for laser oscillation in the 1.1 to 1.6 μm band. Further, InN by bowing effect _x As _y P _1-xy order (0 <x <1,0 ≦ y <1) layer decrease in the conduction band level marked than the decrease of the valence band level of said laminated structure in At 200 m
It can be increased to eV or more. The lattice constant of GaP is smaller than the lattice constant of GaAs, making it possible to use a material having a higher band gap energy. InN _{x x}
If a layer formed of As _y P _1-xy (0 <x <1, 0 ≦ y <1) is interposed, ΔEc can be further increased.

As described in claim 17, claim 1
6, the active layer has a quantum well structure composed of a well layer and a barrier layer, and the well layer is
nN _x As _y P _1-xy which is preferably formed from a (0 <x <1,0 ≦ y <1) layer.

As a result, carriers in the well layer behave as quantum mechanical waves, and laser emission can be achieved with a smaller injection current.

As described in claim 18, claim 1
7, the barrier layer is made of GaN _{x ' Asy '} P _1-x'-y '
(0 <x ′ <1, 0 ≦ y ′ <1).

As described in claim 19, claim 1
6, the laminated structure includes a cladding layer of the same conductivity type as the substrate located below the active layer, and a cladding layer and a contact layer of a conduction type different from the substrate located above the active layer. Further, an electrode may be disposed on the contact layer, the electrode being in contact with the contact layer in a stripe-shaped region.

As a result, the injected current is confined in the stripe region, and the lateral confinement of carriers is realized.

As set forth in claim 20, claim 1
In 9, the portion including the cladding layer and the contact layer of a conductivity type different from that of the substrate in the laminated structure may be processed into a ridge shape.

As a result, the effective refractive index changes in the horizontal direction between the ridge portion and the portions on both sides of the ridge portion, and the light is confined in the horizontal direction.

As described in claim 21, claim 1 is
In 6, the stacked structure further includes a cladding layer of the same conductivity type as the substrate located below the active layer, and a cladding layer of a different conductivity type from the substrate located above the active layer. The cladding layer of a conductivity type different from the substrate has a ridge-like portion, and a current block layer of the same conductivity type as the substrate is disposed on both sides of the ridge-like portion. A buried layer of a conductivity type different from that of the substrate may be disposed thereon.

As a result, the confinement of carriers and light is realized, and the reactive current is reduced by the function of the current blocking layer.

As set forth in claim 22, claim 1
In 9 to 20, the cladding layer may be formed of GaP.

As described in claim 23, claim 2
In 1, the cladding layer, the current blocking layer and the buried layer may be formed of GaP.

As set forth in claim 24, claim 1
6, the laminated structure includes a cladding layer of the same conductivity type as that of the substrate located below the active layer, and a cladding layer of a conductivity type different from that of the substrate located above the active layer. A current blocking layer of the same conductivity type as the substrate, which is disposed above a cladding layer of a conductivity type different from the substrate, and a buried layer of a conductivity type different from the substrate disposed above the current blocking layer. A part of the buried layer may be in contact with the conductive type cladding layer different from the substrate in the stripe-shaped region.

As described in claim 25, claim 2
In 4, the cladding layer, the current blocking layer, and the buried layer may be formed of GaP.

As set forth in claim 26, claim 1
6, the laminated structure includes a cladding layer of the same conductivity type as the substrate located below the active layer, and a cladding layer and a contact layer of a conduction type different from the substrate located above the active layer. A lamination structure including the GaP substrate, the cladding layer, and the active layer is processed into a mesa shape, and both sides of the mesa are the same as the first current blocking layer of a conductivity type different from the substrate and the substrate. A buried layer of a conductivity type different from the substrate may be disposed on the second current blocking layer, the buried layer being embedded with the second current blocking layer of the conductivity type.

As a result, the two current blocking layers of different conductivity types narrow the injection current into the mesa, efficiently realize the confinement of carriers and light, and reduce the reactive current.

As set forth in claim 27, claim 2
In 6, the cladding layer, the current blocking layer, and the buried layer may be formed of GaP.

According to still another aspect of the present invention, there is provided a semiconductor laser device comprising: an Si substrate;
A semiconductor laser device comprising a laminated structure formed on a substrate, the laminated structure includes an active layer for light emission, the active layer, InN _x As _y lattice-matched to the Si substrate P _1-xy (0 <x <1, 0 ≦ y <1) layers are included.

Thus, for long-distance optical communication using a Si substrate (band gap energy of 1.1 to 1.6 μm
Band) semiconductor laser can be realized. _{This, InN x As y P 1-} xy (0 lattice-matched to Si substrate <x <1,0 ≦ y
<1) This is because the band gap energy of the layer is reduced due to the bowing effect and exhibits an optimum value for laser oscillation in the 1.1 to 1.6 μm band. Further, InN by bowing effect _x As _y P _1-xy order (0 <x <1,0 ≦ y <1) layer decrease in the conduction band level marked than the decrease of the valence band level of said laminated structure in , The ΔEc is 200me
V or more. As a result, even if the energy of carriers increases due to an increase in environmental temperature or the temperature of the semiconductor laser device itself, an increase in the number of carriers overflowing from the active layer is suppressed, and performance with excellent temperature characteristics is exhibited.

In particular, by using the Si substrate,
A semiconductor laser device can be integrated on a single substrate together with a semiconductor integrated circuit element such as a transistor.

As described in claim 29, claim 2
8, the active layer has a quantum well structure composed of a well layer and a barrier layer, and the well layer is
It is preferable _{nN x As y P 1-xy} (0 <x <1,0 ≦ y <1) is a layer. As a result, carriers in the well layer behave as quantum mechanical waves, and laser emission can be achieved with a smaller injection current.

The band gap energy of the barrier layer needs to be smaller than that of the cladding layer. An optical communication system according to the present invention includes the semiconductor laser device according to any one of claims 1 to 29.

Another semiconductor laser device according to the present invention is GaAs
A semiconductor laser device comprising an s substrate and a laminated structure formed on the GaAs substrate, wherein the laminated structure comprises:
An active layer for emitting light, wherein the active layer includes In
N _x As _y P _1-xy includes a (0 <x <1,0 ≦ y <1) layer, a transistor for injecting current into said active layer is integrated on the GaAs substrate.

Another semiconductor laser device of the present invention is a semiconductor laser device having a Si substrate and a laminated structure formed on the Si substrate, wherein the laminated structure includes an active layer for emitting light. and de, the active layer, InN _x As _y
P _1-xy (0 <x <1, 0 ≦ y <1) layer, and a transistor for injecting a current into the active layer is formed of the S _1-xy (0 <x <1, 0 ≦ y <1) layer.
integrated on an i-substrate.

Still another semiconductor laser device of the present invention
A semiconductor laser device comprising an i-substrate and a laminated structure formed on the Si substrate, wherein the laminated structure includes an active layer for emitting light, and the active layer is formed of InN _x
As _y P _1-xy includes a (0 <x <1,0 ≦ y <1) layer, the recess for supporting an optical fiber receiving laser light emitted from said active layer on said Si substrate Is provided.

[0061] At least a part of the optical fiber may be supported by the groove of the Si substrate.

It is preferable that a transistor for injecting a current into the active layer is integrated on the Si substrate.

The method of manufacturing a semiconductor laser device according to the present invention
Forming the _{InN x As y P 1-xy} (0 <x <1,0 ≦ y <1) layer laminated structure comprising a semiconductor substrate, and patterning the layered structure, the laser cavity and a reflective surface And forming a transistor on the semiconductor substrate.

[0064] The method may further include forming a concave portion in the semiconductor substrate for supporting an optical fiber for receiving the laser light emitted from the active layer.

[0065] The method may further include a step of arranging at least a part of the optical fiber in the concave portion of the semiconductor substrate.

[0066]

FIG. 9A shows the relationship between the band gap energy and the lattice constant of a group III-V compound semiconductor. InN _x P _1-x (0 <
x <1) (hereinafter may be simply referred to as “InNP”) can be used to change the lattice constant of InNP by appropriately selecting the composition ratio of N (nitrogen) and P (phosphorus) contained therein. It is possible to match the lattice constants of GaAs, GaP and Si.

However, as N is added to InP, the band gap energy of the obtained ternary mixed crystal becomes
Since it is expected to linearly increase so as to approach the band gap energy of InN, the band gap energy (oscillation wavelength: 1.1 to 1.6 μm) suitable for optical communication
It has been thought that it will deviate from obi). Therefore, I
When nGaAsP or InPAs is used as the active layer material of the semiconductor laser, an InP substrate is used, and a substrate made of a material having a lattice constant smaller than the lattice constant of InP has not been adopted.

The present inventor adds N to InP,
Alternatively, it has been found that as P is added to InN, the band gap energy decreases (Boeing phenomenon), as shown in FIG. Therefore, the lattice constant is changed to Ga
Even when N is added so as to match As, GaP, and Si, the bandgap energy is smaller than that of InP and InN, and is in the 1.1 to 1.6 μm band used for optical communication.

Since the bowing effect of the band gap energy found by the present inventors mainly occurs in the conduction band,
A very large ΔEc of 00 meV or more can be realized. This will be described with reference to FIG. FIG. 9B shows the band structure of InP and InNP. As shown in FIG. 9B, 70% or less of N is added to InP.
Is added to form InNP, the bandgap energy (Eg (InNP)) of InNP becomes smaller than the bandgap energy (Eg (InP)) of InP. Further, the energy (Ev) on the valence band side hardly changes, and the energy (Ec) on the conduction band side is reduced by adding N. Such an InNP layer is formed of GaAs.
s, GaP or AlGaAs layer, 200
A large ΔEc of meV or more can be realized. In particular, when a GaAs substrate is used, an AlGaAs layer that cannot be grown on an InP substrate can be grown, and these layers can be used as a cladding layer or a barrier layer. As a result, it is possible to realize a configuration more suitable for confining carriers than when using an InP substrate.

[0070] Incidentally, InP, an InN and InAs mixed crystal _{InN x As y P 1-xy} (0 <x <1,0 <y <
1) (hereinafter simply referred to as “InNAsP”)
Similar to nNP, it is possible to make GaAs, GaP and Si have the same lattice constant, and it is also possible to make band gap energy show a value in the 1.1 to 1.6 μm band. InNAsP can control both the lattice constant and the band gap energy in a wider range than in the case of InNP by appropriately selecting the ratio of P, N and As.

[0071] In the present specification, together with the "InNP,""InNAsP", InN _x As _y P
_1-xy (0 <x <1, 0 ≦ y <1). less than,
An embodiment of the present invention will be described with reference to the accompanying drawings.

(First Embodiment) FIG. 1A is a front view of a semiconductor laser device according to a first embodiment of the present invention. The oscillation wavelength of this semiconductor laser device is 1.3 μm.
m.

This semiconductor laser device has an n-type GaAs substrate 1 and a laminated structure provided on the n-type GaAs substrate 1. This laminated structure has an n-type GaAs buffer layer (thickness 1 μm) 2, an n-type Al _0.5 Ga _0.5 As clad layer (thickness 1.5 μm) 3, an n-type GaAs optical confinement layer (thickness 100 nm) 4, an active layer 5, p-type GaAs optical confinement layer (thickness: 100 nm) 6, p-type Al _0.5 Ga _0.5 As
Cladding layer (central thickness 2.0 μm) 7, p-type GaAs
The s contact layer (thickness: 1 μm) 8 is included in this order from the n-type GaAs substrate 1 side. In this embodiment,
By removing a part of the cladding layer 7 by etching, a stripe-shaped ridge structure for adjusting a transverse mode of laser light is formed. The top of the laminated structure,
More specifically, an SiO ₂ insulating film 4 is formed on the p-type cladding layer 7.
9 is deposited, and the p-side electrode 9 is disposed thereon.
The p-side electrode 9 is in contact with the contact layer 8 via a stripe-shaped opening provided in the SiO ₂ insulating film 49. n
An n-side electrode 10 is formed on the back surface of the type GaAs substrate 1.

FIG. 1B is an enlarged view of the active layer 5. The active layer 5 has a quantum well structure in which a pair of GaAs barrier layers 11 sandwich an InNAsP well layer 12. InNAs so that the laser oscillation wavelength is near 1.3 μm.
The composition ratio and the layer thickness of the P well layer 12 are set. Further, the InNAsP well layer 11 has-
A lattice strain of 1.5% to + 1.5% is applied.

By adopting such a configuration, G
The band offset (ΔEc) on the conduction band side of the aAs barrier layer 11 and the InNAsP well layer 12 is 200 meV or more, and the band offset (ΔEv) on the valence band side is 10 meV.
It can be set to 0 meV or less. Therefore, electrons are sufficiently confined with respect to an increase in ambient temperature, and characteristics are not deteriorated.

In this embodiment, the well layer 12 is made of InNAsP
Is used, but the same effect can be obtained even if this is InNP. The number of wells in the active layer 5 is one, but may be two or more (using multiple quantum wells).

The barrier layer 11 and the light confinement layer 4 or 6
Is made of GaAs, but instead of In,
GaAsP, InGaP, AlGaAs and AlGa
Any of InP may be used. Light confinement layer 4
Or 6 is made of one kind of material,
aAsP, InGaP, AlGaAs and AlGaI
It may be formed from two or more materials having different band gap energies from nP. AlGaAs is used for the material of the cladding layer 3 or 7, but InGaAsP, InGaP or AlG lattice-matched to GaAs.
Any of aInP may be used.

Further, the oscillation wavelength of this embodiment is 1.3 μm
Although it is a band, the band may be a 1.55 μm band or any other band.

The present embodiment is a Fabry-Perot laser, but the present invention is applied to a distributed feedback semiconductor laser device (DFB laser) in which a diffraction grating is formed near an active layer (for example, a substrate near the active layer). Is also good.

FIG. 2A is a front view of a semiconductor laser device according to a second embodiment of the present invention. The oscillation wavelength of this semiconductor laser device is 1.3.
It is near μm.

This semiconductor laser device has an n-type GaAs substrate 1 and a laminated structure provided on the n-type GaAs substrate 1. This laminated structure includes an n-type GaAs buffer layer (thickness 1 μm) 2, an n-type Al _0.5 Ga _0.5 As clad layer (thickness 1.5 μm) 3, an n-type GaAs optical confinement layer (thickness 100 nm) 4, an active layer 5, p-type GaAs optical confinement layer (thickness: 100 nm) 6, p-type Al _0.5 Ga _0.5 As
The cladding layer (thickness: 0.15 μm) 7 is included in this order from the side of the substrate 1.

On the p-type cladding layer 7, n-type Al _0.6 Ga
_{The 0.4} As current blocking layer 13 is laminated, and a part of the current blocking layer 13 is removed by etching at the center to form a striped opening. On top of the current block layer 13, p-type Al _0.5 Ga _0.5 As
A buried layer (2.0 μm thick) 14 and a p-type GaAs contact layer (1 μm thick) 8 are stacked. The buried layer 14 and the clad layer 7 are in contact with each other in a stripe-shaped region extending in the resonator direction at the center, and current flows vertically through this portion. The width of the stripe region is 2.5 μm. The p-side electrode 9 is in contact with the contact layer 8, and an n-side electrode 10 is formed on the back surface of the n-type GaAs substrate 1.

FIG. 2B is an enlarged view of the active layer 5. The active layer 5 has a quantum well structure formed of a pair of GaAs barrier layers 11 and InNAsP well layers 12,
The composition ratio and the layer thickness of the InNAsP well layer 12 are set so that the oscillation wavelength is around 1.3 μm. InN
Lattice strain of -1.5% to + 1.5% with respect to GaAs is applied to the AsP well layer 11.

By adopting such a configuration, G
The band offset (ΔEc) on the conduction band side of the aAs barrier layer 11 and the InNAsP well layer 12 is 200 meV or more, and the band offset (ΔEv) on the valence band side is 100.
It can be set to meV or less, electrons are sufficiently confined with respect to an increase in ambient temperature, and characteristics are not deteriorated.

Further, since it has a real refraction waveguide structure, stable single transverse mode oscillation can be realized. Further, in this embodiment, InNAsP is used as the material of the well layer 11, but the same effect can be obtained even if this is InNP.

The number of wells is one, but may be two or more. Although GaAs is used for the material of the barrier layer and the optical confinement layer, InGaAsP and InG
Any of aP, AlGaAs and AlGaInP may be used.

Although the light confinement layer is formed of one kind of material, InGaAsP, InGaP, AlG
It may be formed of two or more materials having different band gap energies from aAs and AlGaInP. Although AlGaAs is used for the cladding layer, InGaAsP and InGa which are lattice-matched to GaAs are used.
Any of P and AlGaInP may be used.

Further, the oscillation wavelength of this embodiment is 1.3 μm
Although it is a band, the band may be a 1.55 μm band or any other band.

In this embodiment, a Fabry-Perot laser is used, but a distributed feedback semiconductor laser device (DFB laser) having a diffraction grating formed near the active layer (for example, a substrate near the active layer) may be used.

(Third Embodiment) FIG. 3A is a front view of a semiconductor laser device according to a third embodiment of the present invention. The oscillation wavelength of this semiconductor laser device is 1.3 μm.
m.

This semiconductor laser device has an n-type GaAs substrate 1 and a laminated structure provided on the n-type GaAs substrate 1. This laminated structure includes an n-type GaAs buffer layer (not shown, 1 μm in thickness), an n-type In _0.5 Ga _0.5 P cladding layer (1.5 μm) 15, an n-type GaAs optical confinement layer (100 nm in thickness) 4, and an active layer. 5, p-type GaAs light confinement layer (thickness 100 nm) 6, p-type In _0.5 Ga _0.5 P
The cladding layer (thickness: 0.2 μm) 16 is included in this order from the n-type GaAs substrate 1 side. The multilayer film including the n-type cladding layer 3, the n-type optical confinement layer 4, the active layer 5, the p-type optical confinement layer 6, and the p-type cladding layer 16 is etched to extend in a stripe shape along the resonator direction. Mesa is formed.

On both sides of this mesa, p-type In _0.5 Ga _0.5
A P current block layer 17 and an n-type In _0.5 Ga _0.5 P current block layer 18 are stacked. On the current block layer 18 and the p-type cladding layer 16, p-type In _0.5 Ga _0.5 P
A buried layer (2.0 μm thick) 19 and a p-type GaAs contact layer (1 μm thick) 8 are stacked. Current flows vertically through the mesa. The width of this mesa is 1.5 μm
It is. The p-side electrode 9 is in contact with the contact layer 8,
On the back surface of the n-type GaAs substrate 1, an n-side electrode 10 is formed.

FIG. 3B is an enlarged view of the active layer 5. The active layer 5 includes a GaAs barrier layer 11 and an InNAsP well layer 1.
2 and the composition ratio and the layer thickness of the InNAsP well layer 12 are set so that the oscillation wavelength is around 1.3 μm. The InNAsP well layer 11 has G
Lattice strain of -1.5% to + 1.5% is applied to aAs.

By adopting such a configuration, G
The band offset (ΔEc) on the conduction band side of the aAs barrier layer 11 and the InNAsP well layer 12 is 200 meV or more, and the band offset (ΔEv) on the valence band side is 10 meV.
It can be set to 0 meV or less, the electrons are sufficiently confined to the rise of the ambient temperature, and the characteristics do not deteriorate. Further, since it has a real refraction waveguide structure, stable single transverse mode oscillation can be realized. Further, since the current flows only in the active layer 5 in the mesa, a current component that does not contribute to oscillation can be greatly reduced, and low threshold current characteristics can be realized.

In this embodiment, the material of the well layer is InNA
Although sP is used, a similar effect can be obtained even if this is InNP. Although the number of wells is one, it may be two or more. Although GaAs is used for the material of the barrier layer and the optical confinement layer, InGa
It may be formed from AsP. The light confinement layer is formed of one type of material, but may be formed of two or more types of InGaAsP materials having different composition ratios. Further, although InGaP is used for the cladding layer, it may be formed of InGaAsP lattice-matched to GaAs and having a band gap energy larger than that of the barrier layer.

In this embodiment, the oscillation wavelength is 1.3 μm.
The band is the m band, but it may be the 1.55 μm band or any other band. In this embodiment, the Fabry-Perot laser is used. However, a distributed feedback semiconductor laser device (DFB laser) in which a diffraction grating is formed near the active layer (for example, a substrate near the active layer) may be used.

(Fourth Embodiment) FIG. 4A is a view of a semiconductor laser device (vertical cavity surface emitting laser) according to a fourth embodiment of the present invention as viewed from above, and FIG. () Is a cross-sectional view at the center. The oscillation wavelength of the semiconductor laser device of the present invention is around 1.3 μm.

This semiconductor laser device has an n-type GaAs substrate 1 and a laminated structure provided on the n-type GaAs substrate 1. This laminated structure includes an n-type GaAs buffer layer (1 μm in thickness) 2, an n-type semiconductor multilayer mirror 20,
n-type GaAs optical confinement layer (thickness 100 nm) 4, active layer 5, p-type GaAs optical confinement layer (thickness 100 nm)
6, a p-type semiconductor multilayer reflector 21 and a p-type GaAs contact layer (thickness: 1 μm) 8 are included in this order from the n-type GaAs substrate 1 side.

P-type semiconductor multilayer mirror 21 and p-type G
The aAs contact layer 8 is formed into a circular mesa by etching, and the diameter of the mesa is 50 μm.

A current confinement structure composed of an AlAs region 22 and an Al oxide film region 23 is provided between the p-type GaAs light confinement layer 6 and the p-type semiconductor multilayer film reflecting mirror 21. This current confinement layer structure has an A
It is divided into an lAs region 22 and an electrically insulating Al oxide film region 23 surrounding the AlAs region 22. Current is injected into the active layer 5 only through the AlAs region 22. The Al oxide film region 23 is formed by selectively oxidizing a peripheral region of the AlAs layer.

The n-type semiconductor multilayer mirror 20 has a structure in which AlAs layers and GaAs layers are alternately stacked by 28 layers. The p-type semiconductor multilayer reflector 21 is made of Al
_It has a structure in which 30 layers of _0.67 Ga _0.37 As and GaAs are alternately laminated. The thickness of each layer is 1.3 μm
Therefore, the entire reflectance is maximized.

The p-side electrode 9 is in contact with the contact layer 8, and an n-side electrode 10 is formed on the back surface of the n-type GaAs substrate 1. N-type GaAs corresponding to the lower part of the circular mesa
The n-side electrode 10 is not formed on the back surface of the substrate 1, and has a structure in which laser light is extracted from the n-type GaAs substrate 1.

An enlarged view of the active layer 5 is shown in FIG. The active layer 5 includes a GaAs barrier layer 11 and an InNAsP well layer 12.
The composition ratio and the layer thickness of the InNAsP well layer 12 are set so that the oscillation wavelength is around 1.3 μm. In addition, Ga is added to the InNAsP well layer 11.
Lattice strain of -1.5% to + 1.5% is applied to As.

By adopting such a configuration, G
The band offset (ΔEc) on the conduction band side of the aAs barrier layer 11 and the InNAsP well layer 12 is 200 meV or more, and the band offset (ΔEv) on the valence band side is 100.
It can be set to meV or less, electrons are sufficiently confined with respect to an increase in ambient temperature, and characteristics are not deteriorated. Further, it is possible to use an Al (Ga) As / GaAs multilayer film which can obtain a very high reflectance as a semiconductor multilayer film reflecting mirror, and it is possible to realize low threshold characteristics. When an InP substrate is used as in the prior art, Al (Ga) As /
Since a GaAs multilayer film cannot be grown on an InP substrate, A
It was necessary to attach the l (Ga) As / GaAs multilayer mirror to the InP substrate. However, according to the present embodiment,
Since a GaAs substrate is used, a surface emitting semiconductor laser device having a multilayer mirror with high reflectivity can be provided at low cost.

In this embodiment, the well layer 5 is made of InN.
Although an AsP layer is used, a similar effect can be obtained by using an InNP layer. Although the number of wells is one, it may be two or more. Although GaAs is used for the material of the barrier layer and the optical confinement layer, InGaAs is used.
sP, InGaP, AlGaAs and AlGaInP
Any of these may be used. Although the light confinement layer is formed of one kind of material, InGaAsP,
It may be formed from two or more kinds of materials having different band gap energies from nGaP, AlGaAs and AlGaInP.

Further, in this embodiment, the oscillation wavelength is 1.3 μm.
Although the band is the m band, the band may be the 1.55 μm band or other.

(Fifth Embodiment) FIG. 5A is a front view of a semiconductor laser device according to a fifth embodiment of the present invention. The oscillation wavelength of the semiconductor laser device of the present invention is around 1.3 μm.

This semiconductor laser device has an n-type GaP substrate 25 and a laminated structure provided on the n-type GaP substrate 25. This laminated structure has an n-type GaP cladding layer (1.5 μm thick) 26, an n-type GaN _{x ′} Asy _′ P
_{1-x′-y ′} (0 <x ′ <1, 0 ≦ y ′ <1) (hereinafter simply referred to as “GaNAsP”) light confinement layer 27, active layer 28, n-type GNAsP light confinement layer 29, p-type GaP
Cladding layer (central thickness 2.0 μm) 30, p-type Ga
The P contact layer (thickness: 1 μm) 31 is included in this order from the n-type GaP substrate 25 side.

In this embodiment, a striped ridge structure for adjusting the transverse mode of laser light is formed by removing a part of the cladding layer 30 by etching. An SiO ₂ insulating film 49 is deposited on the upper part of the laminated structure, more specifically, on the p-type cladding layer 30, and the p-side electrode 9 is disposed thereon. The p-side electrode 9 is made of SiO ₂
The contact layer 8 is in contact with the contact layer 8 through a stripe-shaped opening provided in the insulating film 49. On the back surface of the n-type GaAs substrate 1, an n-side electrode 10 is formed.

An enlarged view of the active layer 28 is shown in FIG.
The active layer 28 is formed of the GaNAsP barrier layer 32 and the InNAsP well layer 12, and the composition ratio and the layer thickness of the InNAsP well layer 12 are set such that the oscillation wavelength is near 1.3 μm. In addition, the InNAsP well layer 11
Has a lattice strain of -1.5% to + 1.5% with respect to GaP.

By employing such a configuration, G
The band offset (ΔEc) on the conduction band side of the aNAsP barrier layer 32 and the InNAsP well layer 12 can be set to 500 meV or more, and can be made larger than that of a structure using a GaAs substrate. Is sufficiently performed, and the characteristics are not deteriorated.

In the present embodiment, the well layer 12 has In
Although the NAsP layer is used, the same effect can be obtained even if this is an InNP layer. Although the number of wells is one, it may be two or more. The light confinement layer is made of one kind of material,
It may be formed from two or more materials having different composition ratios in sP.

Further, in this embodiment, the oscillation wavelength is 1.3 μm.
Although the band is the m band, the band may be the 1.55 μm band or other. Although the present embodiment is a Fabry-Perot laser, a distributed feedback semiconductor laser device (DFB) in which a diffraction grating is formed near an active layer (for example, a substrate near the active layer).
(Laser).

(Sixth Embodiment) FIG. 6A is a front view of a semiconductor laser device according to a sixth embodiment of the present invention. The semiconductor laser device of the present invention has an oscillation wavelength of 1.
It is around 3 μm.

This semiconductor laser device has an n-type GaP substrate 25 and a laminated structure formed on the n-type GaP substrate 25. This laminated structure has an n-type GaP cladding layer (thickness 1.5 μm) 26, an n-type GaAsP light confinement layer 27, an active layer 28, an n-type GaAsP light confinement layer 29, and a p-type GaP cladding layer (thickness 0.15 μm). ) 30
From the substrate side in this order. An n-type GaP current blocking layer 33 is laminated on the p-type cladding layer 30, and a part of the current blocking layer 33 is removed by etching at the center. Further, a p-type GaP buried layer (2.0 μm thick) is formed on the current block layer 33.
34, a p-type GaP contact layer (thickness: 1 μm) 31 is laminated. At the center, the buried layer 34 and the cladding layer 30 are in direct contact in a striped region extending along the resonator direction, and current flows vertically through this portion. The width of this stripe region is 2.5 μm. The p-side electrode 9 is in contact with the contact layer 29,
On the back surface of the n-type GaP substrate 23, an n-side electrode 10 is formed.

An enlarged view of the active layer 28 is shown in FIG.

The active layer 28 is composed of the GaNAsP barrier layer 32 and the I
The InNAsP well layer 12 is formed from the nNAsP well layer 12, and the composition ratio and the layer thickness of the InNAsP well layer 12 are set so that the oscillation wavelength is around 1.3 μm. Also, InNAs
In the P well layer 11, from -1.5% to +1.
5% lattice strain is applied.

By adopting such a configuration, G
The band offset (ΔEc) on the conduction band side of the aNAsP barrier layer 32 and the InNAsP well layer 12 can be set to 500 meV or more, and can be made larger than that of a structure using a GaAs substrate. Is sufficiently performed, and the characteristics are not deteriorated. Further, current constriction can be effectively realized, and a low threshold current can be achieved.

In this embodiment, the well layer is formed of InNAs.
Although P is used, a similar effect can be obtained even if this is InNP. Although the number of wells is one, it may be two or more. Further, the light confinement layer is formed of one kind of material, but may be formed of two or more kinds of materials having different composition ratios of GNAsP.

Further, in this embodiment, the oscillation wavelength is 1.3 μm.
The band is the m band, but it may be the 1.55 μm band or any other band. In this embodiment, the Fabry-Perot laser is used. However, a distributed feedback semiconductor laser device (DFB laser) in which a diffraction grating is formed near the active layer (for example, a substrate near the active layer) may be used.

(Seventh Embodiment) FIG. 7A is a front view of a semiconductor laser device according to a seventh embodiment of the present invention. The oscillation wavelength of the semiconductor laser device of the present invention is 1.
It is around 3 μm.

This semiconductor laser device has an n-type GaP substrate 25 and a laminated structure formed on the n-type GaP substrate 25. In this laminated structure, an n-type GaP cladding layer (thickness: 1.5 μm) 26, an n-type GaAsP light confinement layer 27, an active layer 28, a p-type GaAsP light confinement layer 29, and a p-type GaP cladding layer 30 Include in this order from the side. The laminated structure including the n-type cladding layer 26, the n-type optical confinement layer 27, the active layer 28, the p-type optical confinement layer 29, and the p-type cladding layer 30 is processed into a mesa extending in a stripe direction in the resonator direction by etching. ing. On both sides of the mesa, a p-type GaP current blocking layer 35
And an n-type GaP current block layer 36. A p-type GaP buried layer (2.0 μm thick) 37 and a p-type GaP
A contact layer (thickness: 1 μm) 31 is laminated. Current flows vertically through the mesa. The width of this mesa is 1.
5 μm. The p-side electrode 9 is in contact with the contact layer 29, and an n-side electrode 10 is formed on the back surface of the n-type GaP substrate 25.

An enlarged view of the active layer 28 is shown in FIG.
The active layer 28 is formed of the GaNAsP barrier layer 32 and the InNAsP well layer 12, and the composition ratio and the layer thickness of the InNAsP well layer 12 are set such that the oscillation wavelength is near 1.3 μm. In addition, the InNAsP well layer 11
Has a lattice strain of -1.5% to + 1.5% with respect to GaP.

By adopting such a configuration, G
The band offset (ΔEc) on the conduction band side of the aNAsP barrier layer 32 and the InNAsP well layer 12 can be set to 500 meV or more, and can be made larger than that of a structure using a GaAs substrate. Is sufficiently performed, and the characteristics are not deteriorated. Further, since it has a real refraction waveguide structure, stable single transverse mode oscillation can be realized. Further, since the current flows only in the active layer 28 in the mesa structure, a current component that does not contribute to oscillation can be greatly reduced, and low threshold current characteristics can be realized.

In this embodiment, the well layer is made of InNAs.
Although P is used, a similar effect can be obtained even if this is InNP. Although the number of wells is one, it may be two or more. Further, the light confinement layer is formed of one kind of material, but may be formed of two or more kinds of materials having different composition ratios of GNAsP.

Further, in this embodiment, the oscillation wavelength is 1.3 μm.
The band is the m band, but it may be the 1.55 μm band or any other band. In this embodiment, the Fabry-Perot laser is used. However, a distributed feedback semiconductor laser device (DFB laser) in which a diffraction grating is formed near the active layer (for example, a substrate near the active layer) may be used.

(Eighth Embodiment) FIG. 8A is a front view of a semiconductor laser device according to an eighth embodiment of the present invention. The oscillation wavelength of the semiconductor laser device of the present invention is 1.
It is around 3 μm.

This semiconductor laser device has an n-type Si substrate 3
8 and a laminated structure formed on an n-type Si substrate 38. This laminated structure includes an n-type GaNP cladding layer (thickness: 1.5 μm) 39, an n-type InGaNP light confinement layer 40, an active layer 41, and a p-type InGaNP light confinement layer 4
2. The p-type GaNP cladding layer 43 is included in this order from the substrate side. The laminated structure including the n-type cladding layer 39, the n-type optical confinement layer 40, the active layer 41, the p-type optical confinement layer 42, and the p-type cladding layer 43 is processed into a mesa extending in a stripe shape along the resonator direction by etching. Have been. On both sides of the mesa, a p-type GaNP current block layer 44 and an n-type GaNP current block layer 45 are stacked. Further, on the current block layer 45 and the p-type cladding layer 43, a p-type GaNP buried layer (2.0 μm thick) 46, p-type
A GaP type contact layer (thickness: 0.3 μm) 31 is laminated. Current flows vertically through the mesa. The width of this mesa is 1.5 μm. The p-side electrode 9 is in contact with the contact layer 31, and the n-side electrode 10 is formed on the back surface of the n-type Si substrate 38.

An enlarged view of the active layer 41 is shown in FIG.
The active layer 41 is formed of the InGaNP barrier layer 47 and the InNAsP well layer 12, and the composition ratio and the layer thickness of the InNAsP well layer 12 are set so that the oscillation wavelength is around 1.3 μm. In addition, the InNAsP well layer 11
Has a lattice strain of -1.5% to + 1.5% with respect to GaP.

By adopting such a configuration, I
The band offset (ΔEc) on the conduction band side of the nGaNP barrier layer 47 and the InNAsP well layer 12 can be set to 500 meV or more, and can be made larger than the structure using the GaAs substrate. Is sufficiently performed, and the characteristics are not deteriorated. Further, since it has a real refraction waveguide structure, stable single transverse mode oscillation can be realized. Further, since the current flows only in the active layer 41 in the mesa structure, a current component that does not contribute to oscillation can be greatly reduced, and low threshold current characteristics can be realized. Further, since Si is used for the substrate, the cost for the substrate can be significantly reduced as compared with the case where a compound semiconductor substrate is used. Further, integration with other electronic devices is easy.

In this embodiment, the well layer is formed of InNAs.
Although P is used, a similar effect can be obtained even if this is InNP. Although the number of wells is one, it may be two or more. Further, the light confinement layer is formed of one kind of material, but may be formed of two or more kinds of InGaNP materials having different composition ratios.

Further, in this embodiment, the oscillation wavelength is 1.3 μm.
The band is the m band, but it may be the 1.55 μm band or any other band. In this embodiment, a Fabry-Perot laser is used. However, a distributed feedback semiconductor laser device (DFB laser) having a diffraction grating formed near an active layer (for example, a substrate near the active layer) may be used.

(Ninth Embodiment) FIG. 12A is a sectional perspective view of a semiconductor laser device according to a ninth embodiment of the present invention. The semiconductor laser device of this embodiment is a distributed feedback semiconductor laser device (DFB laser), and its oscillation wavelength is around 1.3 μm.

This semiconductor laser device has an n-type GaAs substrate 1 and a laminated structure provided on the n-type GaAs substrate 1. This laminated structure has an n-type GaAs buffer layer (thickness 1 μm) 2, an n-type In _0.5 Ga _0.5 P clad layer (thickness 1.5 μm) 15, an n-type GaAs optical confinement layer (thickness 100 nm) 4, an active layer 5, a p-type GaAs optical confinement layer (thickness: 100 nm) 6, and a p-type In _0.5 Ga _0.5 P clad layer (thickness: 0.2 μm) 16 are included in this order from the n-type GaAs substrate 1 side. n-type In _0.5 Ga
_0.5 P clad layer 15, n-type GaAs light confinement layer 4,
Active layer 5, p-type GaAs optical confinement layer 6, p-type In _0.5
The portion of the multilayer structure including the Ga _0.5 P cladding layer 16 forms a mesa extending in a stripe shape in the resonator direction. On both sides of the mesa, a p-type In _0.5 Ga _0.5 P current blocking layer 1
7 and an n-type In _0.5 Ga _0.5 P current block layer 18 are stacked. Current block layer 18 and p-type cladding layer 1
6, a p-type In _0.5 Ga _0.5 P buried layer (2.0 μm thick) 19 and a p-type GaAs contact layer (thickness 1
μm) 8 are stacked. Current flows vertically through the mesa. The width of this mesa is 1.5 μm. The p-side electrode 9 is in contact with the contact layer 8, and an n-side electrode 10 is formed on the back surface of the n-type GaAs substrate 1.

Further, in this embodiment, the n-type In _0.5 Ga _0.5
After depositing the P cladding layer 15 and before depositing the n-type GaAs optical confinement layer 4, the diffraction grating 49 is formed by etching. The diffraction grating 49 functions to stably oscillate the laser in a single axis mode.

FIG. 12B is an enlarged view of the active layer 5.
The active layer 5 includes a pair of GaAs barrier layers 11 formed of InNAsP.
It has a configuration to sandwich the well layer 12. The InNAsP well layer 12 is set so that the oscillation wavelength is around 1.3 μm.
And the layer thickness are set. Also, InNA
The sP well layer 11 has a range of -1.5% to +
1.5% lattice strain is applied.

By adopting such a configuration, G
The band offset (ΔEc) on the conduction band side of the aAs barrier layer 11 and the InNAsP well layer 12 is 200 meV or more, and the band offset (ΔEv) on the valence band side is 100.
It can be less than meV. Therefore, electrons are sufficiently confined with respect to an increase in ambient temperature, and characteristics are not deteriorated.

In this embodiment, the well layer 12 is made of InNAsP
Is used, but the same effect can be obtained even if this is InNP. The number of wells in the active layer 5 is one, but may be two or more.

The barrier layer 11 and the light confinement layer 4 or 6
Is made of GaAs, but instead of In,
It may be GaAsP. The optical confinement layer 4 or 6 is formed of one type of material, but may be formed of two or more types of InGaAsP materials having different composition ratios. Although AlGaAs is used as the material of the cladding layer 3 or 7, InGaAsP having lattice matching with GaAs and having a large band gap energy may be used.

Although the oscillation wavelength of the present embodiment is in the 1.3 μm band, it may be in the 1.55 μm band or any other range.

(Tenth Embodiment) FIG. 13 shows the configuration of an optical communication system using the semiconductor laser device according to the first to ninth embodiments as a light source.

This system comprises a semiconductor laser device 51 according to the present invention, an electric signal generator 54 for applying an electric signal to the semiconductor laser device 51 and modulating the intensity thereof, and a laser beam (signal Light) 56
, A lens 55 for condensing laser light 56 emitted from the semiconductor laser device 51 onto the optical fiber 52, and a light for detecting the signal light propagating through the optical fiber 52 and converting it into an electric signal And a detector 53. With such a configuration, audio signals, video signals, and / or data can be transmitted via optical fibers.

According to the present embodiment, since the semiconductor laser device used as the signal light source realizes a low threshold current and a high slope efficiency characteristic over a wide temperature range, a high-quality signal which is hardly affected by the ambient temperature. Transmission is realized.

The lens is not always an essential component.

(Eleventh Embodiment) FIG. 14 shows a semiconductor laser device according to an eleventh embodiment of the present invention. The semiconductor laser device of this embodiment includes a laser unit 202 and a transistor unit 203 integrated on the same semiconductor substrate.
And

[0146] The laser unit 202 has a laminated structure formed on a semi-insulating GaAs substrate 201, the laminated _{structure, InN x As y P 1-} xy (0 <x <1,0 ≦ y
<1) The layer is included as an active layer. As a specific structure, any structure of the semiconductor laser device of the above-described embodiment may be adopted. Laser oscillation wavelength is 1.1 ~
The band is 1.6 μm.

To control the current to be injected into the laser section 202, a transistor section 203 is formed on the GaAs substrate 201 at a position away from the laser section 202. Each of the laser unit 202 and the transistor unit 203 includes a semiconductor layer grown on a GaAs substrate 201 as a component, and the laser unit 202 and the transistor unit 203 are joined to the GaAs substrate 201 at an atomic level. .

FIG. 17 shows an example of a cross-sectional configuration of the transistor portion 203. The transistor portion 203
As can be seen from FIG. 17, the semiconductor device includes a plurality of semiconductor layers and electrodes formed on a substrate 501 (the substrate 201 in FIG. 14). More specifically, an n-GaAs layer 502 and an i-GaAs layer 503 are formed on a substrate 501, and an Al gate electrode 505 is formed on a channel region of the i-GaAs layer 503. i-GaAs layer 50
An n ⁺ -GaAs layer 50 is formed on the source / drain region
4, an Au / Ge / Ni-Au electrode 506 and an Au electrode 507 are formed.

Referring again to FIG. Laser unit 202
The light extraction surface 204 is coated with a low reflection film.
The other surface 205 of the laser unit 202 is coated with a high reflection film. At a position facing the surface 205 on the GaAs substrate 201, a monitoring diode 211 that receives the monitor light emitted from the surface 205 of the laser unit 202 is arranged.

On the upper surface of the GaAs substrate 201, the electrode 206 connected to the laser unit 202 and the transistor unit 20
3 are provided with electrodes 207 and 208. The laser unit 202 and the transistor unit 203 are interconnected by an electrode 210 via a capacitor 209.

In operation, a direct current is supplied to the electrode 206. The current supplied from the electrode 207 to the transistor section 203 is modulated by the transistor section 203. The modulated current is supplied to the laser unit 202 via the capacitor 209. The modulation by the transistor unit 203 is performed by the gate electrode (the Al electrode 50 in FIG.
This is performed by the alternating current supplied to the electrode 208 connected to 5).

Conventionally, a GaAs transistor is formed.
A separately manufactured laser unit was mounted on the substrate using solder or the like. Therefore, in the conventional device, it was necessary to connect the transistor portion and the laser portion using a lead wire such as an Au wire. The lengths of the lead wires tend to fluctuate, and the slight variations in the length of the leads drastically changed the high frequency characteristics of the laser.

According to the present invention, it is possible to form a laser section 202 for outputting a long wavelength band laser beam on a GaAs substrate 201 by crystal growth. Therefore, the electrode 210 connecting the transistor unit 203 and the laser unit 202 can be formed by a thin film patterning process. Therefore, variations in the length and width of the electrode can be made very small, and the above-mentioned problem can be solved.

In this embodiment, GaAs is used as the substrate material.
Was used, but may be Si. Further, the monitor diode 211 may be formed on the substrate 201 by a crystal growth method. It is not necessary to coat the laser unit 202 with a low-reflection film or a high-reflection film.

(Twelfth Embodiment) FIG. 14 shows a semiconductor laser device according to a twelfth embodiment of the present invention. The semiconductor laser device according to the present embodiment includes a laser unit 302 and a transistor unit 303 integrated on the same semiconductor substrate.
And

[0156] The laser unit 302 has a laminated structure formed on a semi-insulating GaAs substrate 301, the laminated _{structure, InN x As y P 1-} xy (0 <x <1,0 ≦ y
<1) The layer is included as an active layer. As a specific structure, any structure of the semiconductor laser device of the above-described embodiment may be adopted. Laser oscillation wavelength is 1.1 ~
The band is 1.6 μm.

In order to control the current injected into the laser section 302, a transistor section 303 is formed on the GaAs substrate 301 at a position away from the laser section 302. Each of the laser unit 202 and the transistor unit 303 includes a semiconductor layer grown on a GaAs substrate 301 as a component, and the laser unit 302 and the transistor unit 303 are joined to the GaAs substrate 301 at an atomic level. .

The light extraction surface 304 of the laser unit 302 is coated with a low reflection film. Other surface 3 of laser unit 302
05 is coated with a highly reflective film. GaAs substrate 3
01 at a position facing the surface 305,
A monitoring diode 211 for receiving the monitor light emitted from the surface 305 is disposed.

On the upper surface of the GaAs substrate 301, an electrode 306 connected to the laser unit 302 and a transistor unit 30
3 are provided with electrodes 307 and 308. The laser unit 302 and the transistor unit 303 are interconnected by an electrode 310 via a capacitor 309.

In operation, a direct current is supplied to the electrode 306. The current supplied from the electrode 307 to the transistor portion 303 is modulated by the transistor portion 303. The modulated current is supplied to the laser unit 302 via the capacitor 309. The modulation by the transistor unit 303 is performed by the gate electrode of the transistor unit 303 (the Al electrode 50 in FIG. 17).
This is performed by an alternating current supplied to the electrode 308 connected to 5).

A V-shaped groove 311 is formed on the surface of the Si substrate 301 near the light extraction surface 304 of the laser unit 302, and the V-shaped groove 311 supports and fixes an optical fiber 312. Laser light emitted from the laser unit 302 is directly taken into the optical fiber 312.

In the conventional configuration, a laser section for outputting a laser beam in a long wavelength band could not be formed on a Si substrate by crystal growth. With the conventional configuration, it was impossible to make the positional accuracy between the groove and the laser portion less than 1 μm, and the efficiency of taking laser light into the optical fiber installed in the V-shaped groove was low.

According to the present invention, since the laser portion 302 can be formed on the Si substrate 301 by crystal growth, after the laser portion 302 is formed, the V-shaped groove 311 is formed by a process using a mask pattern. it can. For this reason, it is possible to make the positioning accuracy of the V-shaped groove 311 and the laser unit 302 1 μm or less.
The efficiency with which the laser light is introduced into the optical fiber 312 installed in the optical fiber 3 can be greatly improved.

Incidentally, a GaAs substrate may be used instead of the Si substrate. The monitor diode may be formed on the substrate by crystal growth.

(Thirteenth Embodiment) A method of manufacturing a semiconductor laser device will be described with reference to FIGS.

First, as shown in FIG.
The PE _{method, InN x As y P 1-} xy (0 <x <1,
A multilayer film 402 including a layer of 0 ≦ y <1) as an active layer is crystal-grown on a semi-insulating GaAs substrate 401. The oscillation wavelength is set to be in the 1.1 to 1.6 μm band.

Next, using a known lithography technique and etching technique, the multilayer film 402 is patterned as shown in FIG. 16B, thereby forming a laser portion 403 having a resonator structure.

Next, as shown in FIG. 16C, a transistor section 404 is formed. One example of a cross section of the transistor portion 404 is shown in FIG. N-GaAs of FIG.
s layer 502, i-GaAs layer 503 and n ⁺ -GaAs
The s layer 504 is formed by an ordinary MOVPE method or MBE method. These GaAs layers may be patterned after being deposited on the entire surface of the substrate 401, or may be selectively grown on a specific region of the substrate 401.

Next, after depositing a thin film having electrical conductivity, electrodes 405, 405, 406 and 407 and a capacitor 409 are formed by using a lithography technique and an etching technique. The electrode 406 is the transistor part 4
The electrode 407 serves to supply a DC current to the transistor portion 404. The electrode 408 is connected between the transistor section 404 and the laser section 4.
Carry current to 03.

According to this manufacturing method, after the formation of the laser section 403 requiring a processing step performed at a relatively high temperature, the transistor section requiring a processing step performed at a relatively low temperature such as ion implantation is performed. 404 is formed. Therefore, thermal diffusion of the implanted ions is suppressed, and performance degradation of the transistor portion 404 is prevented.

[0171] It should be noted, InN _x As _y by MOVPE method
When forming a P _1-xy (0 <x <1, 0 ≦ y <1) layer,
Source gases of In, N, As and P are supplied into the reaction tube together with hydrogen or nitrogen functioning as a carrier gas. As source gases of In, N, As, and P, trimethylindium, dimethylhydrazine, tert-butylarsine, and tert-butylphosphine can be used, respectively. The substrate temperature is, for example, 600
℃ can be grown InN _x As _y P _1-xy crystal layer on the substrate as a. Note that arsine may be used as the As material, and phosphine may be used as the P material. As the N raw material, monomethylhydrazine or tert-butylhydrazine may be used.

[0172]

As described above, claims 1 to 15 are provided.
According to the invention, in a semiconductor laser device comprising a laminated structure formed on a GaAs substrate wherein the GaAs substrate, the active layer to be included in the multilayer structure, InN _x As _y P ₁ lattice-matched to GaAs substrate _-xy (0 <x <1, 0 ≦ y
<1) A layer is provided. The _{InN x As y P 1-xy} (0
<X <1, 0 ≦ y <1) The band gap energy of the layer decreases due to the bowing effect, and shows an optimum value for laser oscillation in the 1.1 to 1.6 μm band. Therefore, a semiconductor laser having a long wavelength band suitable for a light source for optical communication can be provided while using a GaAs substrate. In addition, I due to the Boeing effect
Since _{nN x As y P 1-xy} (0 <x <1,0 ≦ y <1) layer decrease in the conduction band level marked than the decrease of the valence band level, in the laminated structure, more 200meV the ΔEc Even if the carrier energy increases due to an increase in the environmental temperature or the temperature of the semiconductor laser device itself, the increase in the number of carriers overflowing from the active layer is suppressed, and as a result, the performance with excellent temperature characteristics Is provided.

According to the sixteenth to twenty-seventh aspects of the present invention, in a semiconductor laser device having a GaP substrate and a laminated structure formed on the GaP substrate, the active layer in the laminated structure includes a GaP substrate. InN _x As _y which is lattice-matched
A P _1-xy (0 <x <1, 0 ≦ y <1) layer is provided. As a result, a semiconductor laser device using a GaP substrate and exhibiting excellent performance in temperature characteristics is provided.

Further, according to the inventions of claims 28 and 29, in a semiconductor laser device comprising a Si substrate and a laminated structure formed on the Si substrate, the active layer in the laminated structure includes InN _x As _y P which is lattice-matched
_1-xy (0 <x <1, 0 ≦ y <1) layers are provided. As a result, a semiconductor laser device that exhibits excellent performance in temperature characteristics using a Si substrate is provided. Further, by using the Si substrate, the semiconductor laser device and its driving circuit and the like can be integrated on a single substrate together with the semiconductor integrated circuit elements such as transistors.

According to the thirtieth aspect of the present invention, since a semiconductor laser device having excellent temperature characteristics is used as a light source,
It is possible to transmit a high-quality signal that is hardly affected by the environmental temperature.

As described above, the semiconductor laser device according to the present invention can realize a low threshold current and a high slope efficiency over a wide temperature range, and the optical communication system according to the present invention can provide an excellent signal. Realize transmission.

[Brief description of the drawings]

FIG. 1A is a diagram illustrating a semiconductor laser device according to a first embodiment of the present invention, and FIG. 1B is a diagram illustrating a configuration of an active layer thereof.

FIG. 2A is a diagram illustrating a semiconductor laser device according to a second embodiment of the present invention, and FIG. 2B is a diagram illustrating a configuration of an active layer thereof.

FIG. 3A is a diagram illustrating a semiconductor laser device according to a third embodiment of the present invention, and FIG. 3B is a diagram illustrating a configuration of an active layer thereof.

4A is a plan view showing a semiconductor laser device (vertical cavity surface emitting laser) according to a fourth embodiment of the present invention, FIG. 4B is a cross-sectional view thereof, and FIG. FIG. 3 is a diagram illustrating a configuration of an active layer.

FIG. 5A is a diagram illustrating a semiconductor laser device according to a fifth embodiment of the present invention, and FIG. 5B is a diagram illustrating a configuration of an active layer thereof.

FIG. 6A is a diagram illustrating a semiconductor laser device according to a sixth embodiment of the present invention, and FIG. 6B is a diagram illustrating a configuration of an active layer thereof.

FIG. 7A is a diagram illustrating a semiconductor laser device according to a seventh embodiment of the present invention, and FIG. 7B is a diagram illustrating a configuration of an active layer thereof.

FIG. 8A is a diagram illustrating a semiconductor laser device according to an eighth embodiment of the present invention, and FIG. 8B is a diagram illustrating a configuration of an active layer thereof.

9A is a diagram showing the relationship between the band gap energy and the lattice constant of a semiconductor material used for the active layer of the semiconductor laser device according to the present invention, and FIG. 9B shows the band structure of InP and InNP. FIG.

FIG. 10 is a sectional perspective view showing a conventional semiconductor laser device.

11A and 11B are diagrams showing problems of the conventional semiconductor laser device, in which FIG. 11A is a band gap energy diagram at a low temperature operation, FIG. 11B is a band gap energy diagram at a high temperature operation, and FIG. 4 is a graph showing temperature dependence of optical characteristics.

12A is a diagram illustrating a semiconductor laser device (distributed feedback semiconductor laser) according to a ninth embodiment of the present invention, and FIG. 12B is a diagram illustrating a configuration of an active layer thereof.

FIG. 13 is a diagram showing a configuration of an optical communication system according to the present invention.

FIG. 14 is a perspective view showing a semiconductor laser device according to an eleventh embodiment of the present invention.

FIG. 15 is a perspective view showing a semiconductor laser device according to a twelfth embodiment of the present invention.

FIGS. 16A to 16D are perspective views illustrating a method for manufacturing a semiconductor laser device according to a thirteenth embodiment of the present invention.

FIG. 17 is a cross-sectional view showing a transistor section in the semiconductor laser device.

[Explanation of symbols]

Reference Signs List 1 n-type GaAs substrate 2 n-type GaAs buffer layer 3 n-type Al _0.5 Ga _0.5 As cladding layer 4 n-type GaAs light confinement layer 5 active layer 6 p-type GaAs light confinement layer 7 p-type Al _0.5 Ga _0.5 As cladding layer 8 p Type GaAs contact layer 9 p-side electrode 10 n-side electrode 11 GaAs barrier layer 12 InNAsP well layer 13 n-type Al _0.6 Ga _0.4 As current block layer 14 p-type Al _0.5 Ga _0.5 As buried layer 15 n-type In _0.5 Ga _0.5 P clad Layer 17 p-type In _0.5 Ga _0.5 P current blocking layer 18 n-type In _0.5 Ga _0.5 P current blocking layer 20 n-type semiconductor multilayer reflector 21 p-type semiconductor multilayer reflector 22 AlAs region 23 Al oxide region 25 n-type GaP Substrate 26 n-type GaP cladding layer 27 n-type GaAsP light confinement layer 28 active layer 29 n-type GaN sP light confinement layer 30 p-type GaP cladding layer 31 p-type GaP contact layer 32 GaN AsP barrier layer 33 n-type GaP current blocking layer 34 p-type GaP buried layer 35 p-type GaP current blocking layer 36 n-type GaP current blocking layer 37 n-type GaP buried layer 38 n-type Si substrate 39 n-type GaNP cladding layer 40 n-type InGaNP light confinement layer 41 active layer 42 p-type InGaNP light confinement layer 43 p-type GaNP cladding layer 44 p-type GaNP current block layer 45 n-type GaNP current block layer 46 p-type GaNP buried layer 47 InGaNP barrier layer 48 SiO ₂ insulating film 49 diffraction grating 51 semiconductor laser device 52 optical fiber 53 light detector 54 an electric signal generator 55 lens 56 the laser beam 101 n-type InP substrate 102 n-type InGaAsP Confinement layer 103 InGaAsP active layer 104 p-type InP cladding layer 105 p-type InP current blocking layer 106 n-type InP current blocking layer 107 p-type InP buried layer 108 p-type InGaAsP contact layer 109 insulating film 110 AN / ZN electrode 111 Ti / Au Electrode 112 Au / SN electrode 201 GaAs substrate 202 laser part 203 transistor part 204 light extraction surface 205 surface for extracting monitor light 206 electrode 207 electrode 208 electrode 209 capacitor 210 electrode 211 monitor diode 301 Si substrate 302 laser part 303 transistor part 304 light extraction Surface 305 Surface for extracting monitor light 306 Electrode 307 Electrode 308 Electrode 309 Capacitor 310 Electrode 311 V-shaped groove 312 Optical fiber 313 Nitride diode 401 GaAs substrate 402 Laser multilayer structure 403 Laser unit 404 Transistor unit 405 Electrode 406 Electrode 407 Electrode 408 Electrode 409 Capacitor

Claims (38)

[Claims] 1. A semiconductor laser device comprising a GaAs substrate and a laminated structure formed on the GaAs substrate, wherein the laminated structure includes an active layer for emitting light, wherein the active layer comprises: InN lattice-matched to the GaAs substrate
_{x As y P 1-xy (} 0 <x <1,0 ≦ y <1) semiconductor laser device comprising a layer. Wherein said active layer has a quantum well structure composed of well layers and barrier layers, the well layer is the _{InN x As y P 1-xy} (0 <x <1,0
2. The semiconductor laser device according to claim 1, wherein the semiconductor laser device is formed from a layer of .ltoreq.y <1). 3. The barrier layer is made of AlGaInP, AlG
3. The semiconductor laser device according to claim 2, wherein the semiconductor laser device is formed of any material selected from the group consisting of aAs, GaAs, InGaAsP, and InGaP. 4. The laminated structure comprises a cladding layer of the same conductivity type as the substrate located below the active layer, and a cladding layer and a contact layer of a conduction type different from the substrate located above the active layer. 2. The semiconductor laser device according to claim 1, further comprising: an electrode in contact with said contact layer in a striped region on said contact layer. 3. 5. The semiconductor laser device according to claim 4, wherein a portion of the stacked structure including the cladding layer and the contact layer having a conductivity type different from that of the substrate is processed into a ridge shape. 6. The laminated structure further includes a cladding layer of the same conductivity type as the substrate located below the active layer, and a cladding layer of a conductivity type different from the substrate located above the active layer. A conductive type clad layer different from the substrate has a ridge-shaped portion, and a current block layer of the same conductive type as the substrate is disposed on both sides of the ridge-shaped portion; 2. The semiconductor laser device according to claim 1, wherein a buried layer of a conductivity type different from that of the substrate is arranged on the layer. 7. The method according to claim 1, wherein the cladding layer is made of GaAs or AlGaAs.
7. A semiconductor device formed of any material selected from the group consisting of s, InGaP, and InGaAsP.
3. The semiconductor laser device according to claim 1. 8. The method according to claim 1, wherein the cladding layer, the current blocking layer and the buried layer are made of GaAs, AlGaAs, InGaP.
7. The semiconductor laser device according to claim 6, wherein the semiconductor laser device is formed of any material selected from the group consisting of InGaAsP and InGaAsP. 9. The stacked structure includes a cladding layer of the same conductivity type as the substrate located below the active layer, and a cladding layer of a different conductivity type from the substrate located above the active layer. A current blocking layer of the same conductivity type as the substrate, which is disposed above a cladding layer of a conductivity type different from the substrate; and a conduction type different from the substrate disposed above the current blocking layer. 2. The semiconductor laser device according to claim 1, further comprising: a buried layer, wherein a part of the buried layer is in contact with a conductive type clad layer different from the substrate in the stripe-shaped region. 10. The semiconductor device according to claim 1, wherein the cladding layer, the current blocking layer, and the buried layer are formed of GaAs, AlGaAs, In.
10. The semiconductor laser device according to claim 9, wherein the semiconductor laser device is formed from any material selected from the group consisting of GaP and InGaAsP. 11. The laminated structure includes a cladding layer of the same conductivity type as the substrate located below the active layer, and a cladding layer and a contact layer of a conduction type different from the substrate located above the active layer. A part including the GaAs substrate, a part including the cladding layer and the active layer, is processed into a mesa, and both sides of the mesa are different from the substrate in a conduction type first current blocking layer. 2. The semiconductor laser device according to claim 1, wherein the semiconductor laser device is embedded with a second current blocking layer of the same conductivity type as that of the substrate and a buried layer of a conductivity type different from that of the substrate is disposed above the second current blocking layer. 12. The method according to claim 12, wherein the cladding layer, the current blocking layer, and the buried layer are made of GaAs, AlGaAs, In.
The semiconductor laser device according to claim 11, wherein the semiconductor laser device is formed of any material selected from the group consisting of GaP and InGaAsP. 13. The semiconductor multilayer mirror of the same conductivity type as the substrate located below the active layer and the semiconductor multilayer film of a different conductivity type from the substrate located above the active layer. 2. The semiconductor laser according to claim 1, further comprising a mirror, wherein the pair of semiconductor laminated structures constitute a vertical resonator, and laser light generated in the resonator is extracted in a direction perpendicular to the substrate. 3. apparatus. 14. The semiconductor laser device according to claim 13, wherein at least one of said pair of semiconductor multilayer mirrors has a stacked structure of AlAs and GaAs. 15. The semiconductor laser device according to claim 13, wherein at least one of said pair of semiconductor multilayer mirrors has a stacked structure of AlGaAs and GaAs. 16. A semiconductor laser device comprising a GaP substrate and a laminated structure formed on the GaP substrate, wherein the laminated structure includes an active layer for emitting light, wherein the active layer comprises: InN _x lattice-matched to the GaP substrate
A semiconductor laser device including an As _y P _1-xy (0 <x <1, 0 ≦ y <1) layer. 17. The active layer has a quantum well structure composed of well layers and barrier layers, the well layer is the _{InN x As y P 1-xy} (0 <x <1,0
17. The semiconductor laser device according to claim 16, wherein the semiconductor laser device is formed of a? Y <1) layer. 18. The GaN _{x ′} Asy _′ P
18. The semiconductor laser device according to claim 17, wherein the semiconductor laser device is formed of _1-x'-y '(0 <x'<1, 0≤y '<1). 19. The laminated structure, wherein the cladding layer of the same conductivity type as the substrate located below the active layer, and a cladding layer and a contact layer of a conduction type different from the substrate located above the active layer 17. The semiconductor laser device according to claim 16, further comprising: an electrode in contact with said contact layer in a striped region on said contact layer. 20. The semiconductor laser device according to claim 19, wherein a portion of the laminated structure including the cladding layer and the contact layer having a conductivity type different from that of the substrate is processed into a ridge shape. 21. The laminated structure further includes a cladding layer of the same conductivity type as the substrate located below the active layer and a cladding layer of a conductivity type different from the substrate located above the active layer. A conductive type clad layer different from the substrate has a ridge-shaped portion, and a current block layer of the same conductive type as the substrate is disposed on both sides of the ridge-shaped portion; 17. The semiconductor laser device according to claim 16, wherein a buried layer of a conductivity type different from that of the substrate is disposed on the layer. 22. The semiconductor laser device according to claim 19, wherein said cladding layer is formed of GaP. 23. The semiconductor laser device according to claim 21, wherein said cladding layer, current blocking layer and said buried layer are formed of GaP. 24. The laminated structure further includes a cladding layer of the same conductivity type as the substrate located below the active layer and a cladding layer of a conductivity type different from the substrate located above the active layer. A current blocking layer of the same conductivity type as the substrate, disposed above a cladding layer of a conductivity type different from the substrate; and a conductive layer different from the substrate disposed on the current blocking layer. 17. The semiconductor laser device according to claim 16, further comprising: a buried layer of a type, wherein a part of the buried layer is in contact with a cladding layer of a conductivity type different from the substrate in the stripe-shaped region. 25. The semiconductor laser device according to claim 24, wherein said cladding layer, said current blocking layer and said buried layer are formed of GaP. 26. The laminated structure according to claim 26, wherein the cladding layer of the same conductivity type as the substrate located below the active layer, and a cladding layer and a contact layer of a conduction type different from the substrate located above the active layer. A portion including the GaP substrate, a portion including the cladding layer and the active layer, is processed into a mesa shape, and a first current block of a conduction type in which both sides of the mesa are different from the substrate. 17. The semiconductor laser according to claim 16, wherein the semiconductor laser is embedded with a layer and a second current blocking layer of the same conductivity type as the substrate, and a buried layer of a conductivity type different from that of the substrate is disposed above the second current blocking layer. apparatus. 27. The semiconductor laser device according to claim 26, wherein said cladding layer, said current blocking layer and said buried layer are formed of GaP. 28. A semiconductor laser device comprising a Si substrate and a laminated structure formed on the Si substrate, wherein the laminated structure includes an active layer for emitting light, wherein the active layer comprises: InN _x A lattice-matched to the Si substrate
A semiconductor laser device including a s _y P _1-xy (0 <x <1, 0 ≦ y <1) layer. 29. The active layer has a quantum well structure composed of well layers and barrier layers, the well layer is the _{InN x As y P 1-xy} (0 <x <1,0
29. The semiconductor laser device according to claim 28, wherein the semiconductor laser device is formed from ≤y <1) layers. 30. An optical communication system including the semiconductor laser device according to claim 1 as a light source. 31. A semiconductor laser device comprising a GaAs substrate and a laminated structure formed on the GaAs substrate, wherein the laminated structure includes an active layer for emitting light, wherein the active layer comprises: _{InN x As y P 1-xy} (0 <x <1,0 ≦
and a transistor for injecting a current into the active layer is integrated on the GaAs substrate. 32. A semiconductor laser device comprising a Si substrate and a laminated structure formed on the Si substrate, wherein the laminated structure includes an active layer for emitting light, wherein the active layer comprises: _{InN x As y P 1-xy} (0 <x <1,0 ≦
and a transistor for injecting a current into the active layer is integrated on the Si substrate. 33. A semiconductor laser device comprising a Si substrate and a laminated structure formed on the Si substrate, wherein the laminated structure includes an active layer for emitting light, _{InN x As y P 1-xy} (0 <x <1,0 ≦
A semiconductor laser device comprising: a y <1) layer; and a concave portion for supporting an optical fiber that receives a laser beam emitted from the active layer is provided on the Si substrate. 34. The semiconductor laser device according to claim 33, wherein at least a part of said optical fiber is supported by said groove of said Si substrate. 35. The semiconductor laser device according to claim 34, wherein a transistor for injecting a current into said active layer is integrated on said Si substrate. 36. _{InN x As y P 1-xy} (0 <x <1,0
≦ y <1) a step of forming a laminated structure including a layer on a semiconductor substrate; a step of patterning the laminated structure to form a laser resonator and a reflection surface; and a step of forming a transistor on the semiconductor substrate. A method for manufacturing a semiconductor laser device, comprising: 37. The method of manufacturing a semiconductor laser device according to claim 36, further comprising a step of forming a recess in the semiconductor substrate for supporting an optical fiber that receives a laser beam emitted from the active layer. 38. The method according to claim 37, further comprising the step of arranging at least a part of the optical fiber in the recess of the semiconductor substrate.