JPH11111725A - Device and method for treating substrate - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a substrate-treating device which has a relatively simple structure and can treat substrates at a high throughput and a substrate-treating method which can be suitably spplied to the device. SOLUTION: A substrate-treating device is provided with a reaction tube 60, a water-supporting base 10, an upper resistance heating heater 70, and a lower resistance heating heater 80. The wafer-supporting base 10 is provided with a lower wafer-supporting base 30 and an upper wafer supporting base 20. Wafers 50 are horizontally mounted on the lower and upper wafer supporting bases 30 and 20 one often another, and circular openings (23 and 33) which are slightly larger than the wafers 50 are respectively formed through the upper and lower wafer supporting bases 20 and 30. The wafer 50 mounted on the upper wafer supporting base 20 is heated directly with the upper resistance heating hater 70, and the wafer 50 mounted on the lower wafer supporting base 30 is heated directly with the lower resistance heating heater 80 via the opening (33).

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate processing apparatus and a substrate processing method, and more particularly, to a substrate processing apparatus and a substrate processing method for manufacturing an electronic component. The present invention relates to an apparatus and a method for performing heat treatment.

[0002]

2. Description of the Related Art As a method of heating a wafer,
There are a resistance heating method using a heater and a lamp heating method using a halogen lamp. In the method using a heater, 10
A batch type vertical furnace for heating zero or more wafers simultaneously is generally known. On the other hand, in a lamp heating method using a halogen lamp, wafers are heated one by one. FIG. 10 shows a lamp heating method using a lamp. In the lamp heating method, the halogen lamp 5 housed in the lamp unit 580 is used.
70 heats the wafer 550 placed on the wafer stage 510 in the processing chamber 560. However, the lamp heating requires a wafer rotation mechanism 590 to make the temperature distribution in the plane of the wafer 550 uniform. Therefore, the lamp heating method is mechanically complicated. Further, an improvement in throughput has been required for single-sheet processing.

[0003]

SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide a substrate processing apparatus having a relatively simple structure and a high throughput, and a substrate processing method suitably applicable to such an apparatus. It is in.

[0004]

In order to improve the throughput, the present inventors have studied a method in which two wafers are stacked one on top of the other and heated at the same time. In the heating method, since the wafer rotating mechanism 590 is required on the lower side of the wafer, the wafer 550 cannot be heated from the lower surface. Therefore, two wafers are vertically stacked and simultaneously heated with good uniformity. It turned out to be impossible.

In order to solve the problem that two wafers cannot be simultaneously heated with good uniformity by using the lamp heating method, the present inventors have proposed the use of two wafers by using a resistance heater. Have been devised which can simultaneously and uniformly heat them.

That is, according to claim 1, there is provided a substrate support having an upper substrate support and a lower substrate support which are vertically stacked, wherein the upper substrate support and the lower substrate support are stacked. The substrate, each of which can mount the substrate substantially horizontally, and wherein the lower substrate support has a first opening that exposes the entire substrate when the lower substrate support is viewed from below. A support, an upper resistance heater provided above the upper substrate support and opposed to the upper substrate support, and provided below the lower substrate support and opposed to the lower substrate support. A lower resistance heater,
There is provided a substrate processing apparatus comprising:

With this configuration, the substrate mounted on the upper substrate support is separately heated by the upper resistance heater, and the substrate mounted on the lower substrate support is separately heated by the lower resistance heater. Therefore, the substrate mounted on the upper substrate support and the substrate mounted on the lower substrate support can be simultaneously heated, and the processing efficiency and throughput are improved.

[0008] The substrate mounted on the upper substrate support is directly heated by the upper resistance heater, so that the substrate is uniformly heated. Also, since the lower substrate support has the first opening exposing the entire substrate, the entire substrate mounted on the lower substrate support is directly heated by the lower resistance heater, As a result, the entire substrate is uniformly heated by the lower resistance heater, the upper resistance heater heats the substrate mounted on the upper substrate support, and the lower resistance heater heats the lower substrate. The heat treatment of the substrate mounted on the support base can be performed under substantially the same conditions, and the heat treatment between the substrate mounted on the upper substrate support base and the substrate mounted on the lower substrate support base can be performed. Are equalized.

Further, since the heating is performed by the resistance heater, it is not necessary to provide a rotating mechanism for uniformly heating the substrate, and the structure of the apparatus is simplified accordingly.

According to a second aspect of the present invention, there is provided the substrate processing apparatus according to the first aspect, wherein each of the upper substrate support and the lower substrate support mounts one of the substrates. Provided.

According to a third aspect of the present invention, the upper substrate support has a second opening for exposing the entire substrate when the upper substrate support is viewed from below. A substrate processing apparatus according to claim 1 or 2 is provided.

In this manner, if the second opening for exposing the entire substrate is also provided in the upper substrate support, the gap between the substrate mounted on the upper substrate support and the substrate mounted on the lower substrate support can be reduced. Is further equalized.

According to a fourth aspect of the present invention, there is provided the substrate processing apparatus according to any one of the first to third aspects, wherein the substrate is a semiconductor wafer.

According to a fifth aspect of the present invention, the substrate is a semiconductor wafer, and the first opening is substantially circular and slightly larger than the semiconductor wafer. Item 3. A substrate processing apparatus according to item 1 or 2.

According to claim 6, the substrate is a semiconductor wafer, and each of the first and second openings is substantially circular and slightly larger than the semiconductor wafer. A substrate processing apparatus according to claim 3 is provided.

According to a seventh aspect of the present invention, the substrate processing apparatus further includes a reaction tube, the substrate support is provided in the reaction tube, and the upper resistance heater and the lower resistance heater are connected to the reaction tube. The substrate processing apparatus according to any one of claims 1 to 6, wherein the substrate processing apparatus is provided outside a tube.

With this configuration, the heat treatment can be performed in a state where the inside of the reaction tube is in a predetermined gas atmosphere.

According to the present invention, the upper surface of the upper substrate support is substantially horizontal, the upper surface of the lower substrate support is substantially horizontal, and the upper substrate supports the substrate. The upper main surface of the substrate can be mounted such that the upper main surface is substantially in the same plane as the upper surface of the upper substrate support, and the lower substrate support mounts the substrate on the upper main surface of the substrate. 8. The substrate according to claim 7, wherein the substrate can be mounted so as to be substantially in the same plane as the upper surface of the lower substrate support, and the gas can flow in the reaction tube in a substantially horizontal direction. A processing device is provided.

With this arrangement, the gas flow on the substrate becomes uniform, and the in-plane uniformity of the heat treatment of the substrate is improved.

According to the ninth aspect, the two substrates are vertically stacked and spaced apart from each other between the upper resistance heater and the lower resistance heater.
A substrate processing method, wherein the entire upper substrate is directly heated by the upper resistance heater, and the entire lower substrate is directly heated by the lower resistance heater to process the substrate. Provided.

This makes it possible to simultaneously heat the upper substrate and the lower substrate, thereby improving processing efficiency and throughput. Further, the upper substrate and the lower substrate can be heat-treated under substantially the same conditions, and the heat treatment between the upper substrate and the lower substrate can be equalized. In addition, since the heating is performed directly by the resistance heater, the uniformity of the heat treatment in the substrate is improved in both the upper substrate and the lower substrate.

According to a tenth aspect of the present invention, there is provided a substrate processing method according to the ninth aspect, wherein the substrate is processed using the substrate processing apparatus according to any one of the first to eighth aspects. Provided.

According to the eleventh aspect, the substrate is a semiconductor wafer.
0 is provided.

[0024]

Next, embodiments of the present invention will be described with reference to the drawings.

FIG. 1 is a cross-sectional view for explaining a semiconductor wafer processing apparatus according to the first and second embodiments of the present invention, and FIG. 2 is a sectional view showing the first and second embodiments of the present invention. FIG. 3 is a longitudinal sectional view for explaining a semiconductor wafer processing apparatus according to an embodiment, and FIG. 3 is an exploded perspective view for explaining a wafer support used in the semiconductor wafer processing apparatus according to the first embodiment of the present invention. FIG. 4 is a perspective view for explaining a wafer support used in the semiconductor wafer processing apparatus according to the first embodiment of the present invention, and FIG. 5 is a first and a second embodiment of the present invention. FIG. 6 is a perspective view illustrating a connecting member used in a wafer support of the semiconductor wafer processing apparatus according to the first embodiment. FIG. 6 is a perspective view illustrating the resistance of the semiconductor wafer processing apparatus according to the first and second embodiments of the present invention. A perspective view for explaining the heater FIG. 7 is a plan view for explaining a way transfer arm used in the semiconductor wafer processing apparatuses according to the first and second embodiments of the present invention, and FIG. 8 is a second view of the second embodiment of the present invention. FIG. 9 is a perspective view illustrating a semiconductor wafer processing apparatus according to an embodiment, and FIG. 9 is a perspective view illustrating a semiconductor wafer processing apparatus for comparison.

Referring to FIG. 1 and FIG. 2, a substrate processing apparatus 1 according to first and second embodiments of the present invention
0 and a transfer chamber 200. Processing room 100
Are a quartz reaction tube 60, a wafer support 10 provided in the reaction tube 60, an upper heater 70 and a lower heater 80 provided above and below the reaction tube 60, and an upper heater 70 and a lower heater 80, respectively. And a heat insulating material 90 provided to cover the reaction tube 60, and flanges 110 and 120 provided on the left and right sides of the reaction tube 60.

The reaction tube 60 has a rectangular parallelepiped shape, and left and right flanges 63 and 64 are attached to the flanges 110 and 120, respectively. The flange 110 is provided with a gas supply port 112 and an exhaust port 114.
0 is provided with a gas supply port 122 and an exhaust port 124. The upper surface 65 and the lower surface 66 of the reaction tube 60 are disposed substantially horizontally. The gas flows in the reaction tube 60 in the left-right direction on the paper substantially parallel to the upper surface 65 and the lower surface 66 of the reaction tube 60.

A transfer chamber 200 is attached to the reaction chamber 100 via a flange 110. A transfer robot (not shown) for transferring a wafer is provided in the transfer chamber 200, and the transfer robot
0 is provided with 300 wafer transfer arms,
The wafer 50 is transferred in the direction of the arrow 210.

The two wafers 50 are stacked vertically separated from each other by the wafer support table 10, and the upper and lower surfaces thereof are horizontally arranged.

As shown in FIGS. 3 and 4, the wafer support 10 according to the first embodiment of the present invention includes a base 40, a lower wafer support 30, and an upper wafer support 20, which are provided with the same. The layers are sequentially stacked from the lower side to the upper side. The base 40, the lower wafer support 30 and the upper wafer support 20 are made of quartz, alumina or the like.

The base 40 has a substantially rectangular shape in plan view, and includes four frame members 4 respectively arranged on four sides of the rectangle.
1 to 44 are provided. Insides of the four frame members 41 to 44 are rectangular openings 45. This opening is larger than the openings 23 and 33 described later. Front frame member 4
1 are provided on both sides with pins 402 and 403, respectively.
Pins 401 and 404 are provided on both sides of the rear frame member 42, respectively. Holes 301 to 304 are provided at four corners of the lower wafer support 30, holes 201 to 204 are provided at four corners of the upper wafer support 20, respectively. Pins 403 are inserted into holes 302 and 203
Then, the pins 404 are inserted into the holes 304 and 204, respectively, and the base 40, the lower wafer support 30 and the upper wafer support 20 are laminated and integrated.

The structure of the upper wafer support 20 will be described by taking the upper wafer support 20 as an example. Since the upper wafer support 20 and the lower wafer support 30 have the same structure, they correspond to the components of the upper wafer support 20. For each component of the lower wafer support 30, the upper wafer support 20
Are given in parentheses immediately after the reference numerals denoting the respective constituent elements, and their description is omitted.

The upper wafer support 20 (lower wafer support 30) is rectangular in plan view, and includes a wafer support plate 21 (31) and an auxiliary plate 22 (32). Wafer support plate 21 (31) and auxiliary plate 22 (32)
Is provided with an opening 23 (33). Opening 2
3 (33) is a circle having a diameter slightly larger than the diameter of the wafer 50, so that when the wafer 50 is mounted, the upper wafer support 20 (the lower wafer support 3) is mounted.
0) from below, the entire wafer 50
It will be exposed by (33). The wafer support plate 21 (32) is provided with four claws 24 (34) projecting into the openings 23 (33). Four claws 24
(34) is arranged so as to support the peripheral portion of the wafer 50 at intervals of 90 degrees. Hold the wafer 50 in the claw 24 (3
4) When mounted on the upper surface, the claws 24 (34) are provided so that the upper surface of the wafer 50, the upper surface of the wafer support plate 21 (31), and the upper surface of the auxiliary plate 22 (32) are in the same plane. .

The wafer 50 is transferred to the wafer support 10 while being mounted on two linear mounting arms 310 provided at the tip of the wafer transfer arm 300 as shown in FIGS. Is then transferred to the upper wafer support 20 or the lower wafer support 30,
Conversely, the wafer is transferred from the upper wafer support table 20 or the lower wafer support table 30 onto the mounting arms 310 and 310 and is carried out. At this time, the upper wafer support 20
(Lower wafer support 30) and wafer transfer arm 30
In order to enable the transfer of the wafer 50 between 0 and 0, the notch 27 (in the upper wafer support 20 (lower wafer support 30)) for inserting and moving the mounting arm 310 up and down. 37) and a gap 26 (36). The notch 27 is provided in the wafer support plate 21, and a gap 26 (36) is formed between the wafer support plate 21 and the auxiliary plate 22.

Although the support of the wafer 50 and the transfer of the wafer 50 can be performed without providing the auxiliary plate 22 (32), the gas flows substantially parallel to the upper surface of the wafer 50.
2 (32) is provided to make the gas flow on the upper surface of the wafer 50 more uniform. The auxiliary plate 22 (32) is 2
The wafer supporting plate 21 is connected by the two connecting members 25, 25.
(31). The connecting member 25 has a structure as shown in FIG. 5, and a space 251 is provided at the center thereof, and the mounting arm 310 of the wafer transfer arm 300 is provided.
Can pass through the space 251, and the mounting arm 3
Interference between the connector 10 and the connecting member 251 is prevented.

The heating of the wafer 50 is performed by the upper heater 70 or the lower heater 80.
0 is divided into five in the horizontal direction as shown in FIG.
The sub heaters 71 to 75 and the sub heaters 81 to 85 are provided, respectively. The wafer 50 is configured to be located in the central sub-heater 75 (85) in plan view. Sub heaters 71 to 75 (sub heaters 81 to 85)
So that the wafers 5 can be controlled independently of each other.
This facilitates uniform temperature distribution in the zero plane. In addition,
The upper heater 70 and the lower heater 80 are resistance heaters. Further, the gas during the heat treatment flows in the left and right directions parallel to the paper surface as indicated by the arrows.

The wafer 50 has a wafer transfer arm 300
In the state of being mounted on the mounting arm 310, the opening 2 of the upper wafer support 20 is moved by the wafer transfer arm 300.
3 and then mounted on the pawl 24 by lowering the wafer transfer arm 300 downward. The wafer 50 is similarly mounted on the lower wafer support 30.

The wafers 50 mounted one by one on the upper wafer support 20 and the lower wafer support 30 are heated by the upper heater 70 and the lower heater 80, respectively. At this time, the source gas is caused to flow in the reaction tube 60 in a substantially horizontal direction. Specifically, first, the flange 1
The raw material gas flows into the reaction tube 60 from the gas supply port 112 through the opening 61 of the reaction tube 60 and is discharged from the exhaust port 124 of the flange 120 through the opening 62 of the reaction tube 60. The raw material gas flows into the reaction tube 60 from the gas supply port 122 through the opening 62 of the reaction tube 60 and is discharged from the exhaust port 114 of the opening 61 flange 110 of the reaction tube 60 to process the flow of the raw material gas (eg, film formation) Switch during processing).

When the processing such as film formation is completed, the wafer 50 mounted on the claw 24 of the upper wafer support 20 is
Arm 310 of the wafer transfer arm 300 below the
Then, the wafer 50 is mounted on the mounting arm 310 by lifting the mounting arm 310 upward, and then the wafer 50 is unloaded from the processing chamber 100 by returning the wafer transfer arm 300 to the left side. The wafer 50 mounted on the lower wafer support 30 is also unloaded.

In the present embodiment, the wafer 50 mounted on the upper wafer support 20 is an upper heater 70,
Since the wafers 50 mounted on the lower wafer support 30 are separately heated by the lower heater, the wafers 50 mounted on the upper wafer support 20
And wafer 5 mounted on lower wafer support 30
0 can be simultaneously heat-treated, and processing efficiency and throughput are improved.

Since the lower wafer support 30 is provided with the opening 33 exposing the entire wafer 50, the entire wafer 50 mounted on the lower wafer support 30 is directly heated by the lower heater 80. become. On the other hand, the wafer 50 mounted on the upper wafer support 20 is directly heated by the upper heater 70. As a result, the wafer 50 mounted on the upper wafer support 20
Is uniformly heated by the upper heater 70, and the wafer 50 mounted on the lower wafer support 30 is uniformly heated by the lower heater 80 throughout. Further, the heating of the wafer 50 mounted on the upper wafer support 20 by the upper heater 70 and the heating of the wafer 50 mounted on the lower wafer support 30 by the lower heater 80 can be performed under substantially the same conditions. The upper wafer support 20
The heating process between the wafer 50 mounted on the wafer and the wafer 50 mounted on the lower wafer support 30 is equalized, and the film forming process and the like are also equalized. Further, in the present embodiment, the upper wafer support table 20 is also provided with the opening 23 that exposes the entire wafer 50, so that the wafer 50 mounted on the upper wafer support table 20 is more uniformly heated by the upper heater 70. In addition, the heat treatment between the wafer 50 mounted on the upper wafer support 20 and the wafer 50 mounted on the lower wafer support 30 is further equalized.

Further, the upper heater 70 and the lower heater 80
Is a resistance heater, so that it is not necessary to provide a rotating mechanism or the like for uniformly heating the wafer 50, and the configuration of the apparatus is simplified accordingly.

As shown in FIG. 8, in the second embodiment of the present invention, the lower wafer support 30 is the same as that in the first embodiment, but the upper wafer support 2 is used.
20 is not provided with the opening 33 provided in the upper wafer support table 20 of the first embodiment, but only the mounting arm 310 (see FIGS. 1 and 7) of the wafer transfer arm 300 is connected to the upper wafer support table. Only the linear cutout 222 is provided so as not to interfere with the above. Even with such a structure, the wafer 50 mounted on the upper wafer support 20 is directly heated by the upper heater 70 because there is no obstacle between the upper heater 70 and the wafer 50. Also,
Wafer 50 mounted on lower wafer support 30
Since the entire wafer 50 is exposed through the opening 33 on the lower wafer support 30, the lower heater 80
Directly heated from. Therefore, the heating process of the wafer 50 mounted on the upper wafer support table 220 by the upper heater 70 and the heating process of the wafer 50 mounted on the lower wafer support table 30 by the lower heater 80 can be performed under substantially the same conditions. The upper wafer support 22
0 and the lower wafer support 30
The heating process between the wafer and the wafer 50 mounted thereon is equalized, and the film forming process and the like are also equalized. However, as in the first embodiment, the wafer 50 is also
The opening 23 exposing the entirety and the lower wafer support 3
It is better to provide the same opening 33 as the opening 33
The heat treatment between the wafers 50 mounted on the upper and lower wafer supports, respectively, is further equalized than when the upper wafer support 220 is used as in the embodiment.

FIG. 9 is a perspective view for explaining a semiconductor wafer processing apparatus for comparison. In this case, both the upper wafer support 220 and the lower wafer support 230 are mounted on the mounting arm 31 of the wafer transfer arm 300.
0 (see FIGS. 1 and 7) is the upper wafer support table 220,
Only the linear cutouts 222 and 232 are provided so as not to interfere with the lower wafer support table 230, respectively. In such a structure, the wafer 50 mounted on the upper wafer support 220 is directly heated by the upper heater 70 because there is no obstacle between the upper heater 70 and the wafer 50. However, the wafer 50 mounted on the lower wafer support 230 is mainly heated by the lower heater 80 (the upper heater 70).
After that, since the upper wafer 50 has a shape that blocks heat, it is mainly heated by the lower heater 80.)
However, a lower wafer support 230 is interposed between the lower heater 80 and the wafer 50. Therefore, in this case, the portion A (the portion where the lower wafer support is present below the wafer 50) and the portion B (on the cutout 232 and the lower wafer support is present below the wafer 50) are not included. (The part directly heated by the lower heater 80), the wafer 50 is heated unevenly, the heat treatment becomes uneven, and as a result, the film thickness becomes uneven. Further, such non-uniform heating needs to be more strictly controlled in accordance with high integration of integrated circuits. In addition, it is difficult to perform the heating of the wafer 50 mounted on the upper wafer support 220 by the upper heater 70 and the heating of the wafer 50 mounted on the lower wafer support 230 by the lower heater 80 under the same conditions. Thus, the heating process between the wafer 50 mounted on the upper wafer support 220 and the wafer 50 mounted on the lower wafer support 30 becomes uneven, and the film forming process and the like become uneven.

As described above, the opening 23 of the upper wafer support 20 and the opening 3 of the lower wafer support 30
3 is preferably hollowed out in a substantially wafer-shaped circle, but it goes without saying that it may be hollowed out in a shape larger than the wafer diameter, for example, a polygonal shape.

In the above description, a semiconductor wafer has been described as an example. However, the present invention can be suitably applied to a glass substrate for manufacturing a liquid crystal display element as well as a semiconductor wafer.

[0047]

According to the substrate processing apparatus of the present invention, the substrate mounted on the upper substrate support is an upper resistance heater.
Since the substrates mounted on the lower substrate support are separately heated by the lower resistance heaters, the substrates mounted on the upper substrate support and the substrates mounted on the lower substrate support are removed. At the same time, heat treatment can be performed, and processing efficiency and throughput are improved.

Since the substrate mounted on the upper substrate support is directly heated by the upper resistance heater, the substrate is uniformly heated. Also, since the lower substrate support has the first opening exposing the entire substrate, the entire substrate mounted on the lower substrate support is directly heated by the lower resistance heater, As a result, the entire substrate is uniformly heated by the lower resistance heater, the upper resistance heater heats the substrate mounted on the upper substrate support, and the lower resistance heater heats the lower substrate. The heat treatment of the substrate mounted on the support base can be performed under substantially the same conditions, and the heat treatment between the substrate mounted on the upper substrate support base and the substrate mounted on the lower substrate support base can be performed. Are equalized.

Further, since the heating is performed by the resistance heater, it is not necessary to provide a rotating mechanism for uniformly heating the substrate, and the structure of the apparatus is simplified accordingly.

In the substrate processing method of the present invention,
The upper substrate and the lower substrate can be heat-treated at the same time, so that processing efficiency and throughput are improved. Further, the upper substrate and the lower substrate can be heat-treated under substantially the same conditions, and the heat treatment between the upper substrate and the lower substrate can be equalized. In addition, since the heating is performed directly by the resistance heater, the uniformity of the heat treatment in the substrate is improved in both the upper substrate and the lower substrate.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view illustrating a semiconductor wafer processing apparatus according to first and second embodiments of the present invention.

FIG. 2 is a longitudinal sectional view for explaining a semiconductor wafer processing apparatus according to first and second embodiments of the present invention.

FIG. 3 is an exploded perspective view for explaining a wafer support used in the semiconductor wafer processing apparatus according to the first embodiment of the present invention.

FIG. 4 is a perspective view illustrating a wafer support used in the semiconductor wafer processing apparatus according to the first embodiment of the present invention.

FIG. 5 is a perspective view for explaining a connecting member used in a wafer support of the semiconductor wafer processing apparatus according to the first and second embodiments of the present invention.

FIG. 6 is a perspective view illustrating a resistance heater of the semiconductor wafer processing apparatus according to the first and second embodiments of the present invention.

FIG. 7 is a plan view for explaining a way transfer arm used in the semiconductor wafer processing apparatuses according to the first and second embodiments of the present invention.

FIG. 8 is a perspective view illustrating a semiconductor wafer processing apparatus according to a second embodiment of the present invention.

FIG. 9 is a perspective view illustrating a semiconductor wafer processing apparatus for comparison.

FIG. 10 is a cross-sectional view illustrating a conventional semiconductor wafer processing apparatus.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Semiconductor wafer processing apparatus 10 ... Wafer support stand 20, 220 ... Upper wafer support stand 21, 31 ... Wafer support plate 22, 32 ... Auxiliary plate 23, 33, 45 ... Opening 24, 34 ... Pawl 25, 35 ... Connecting member 26, 36: gap 27, 37, 222, 232: notch 29, 39: space 30, 230: lower wafer support 50: wafer 60: reaction tube 70: upper heater 80: lower heater 90: heat insulator 100 ... Processing chambers 112 and 122 Gas supply ports 114 and 124 Exhaust port 200 Transfer chamber 210 Wafer loading / unloading direction 300 Wafer transfer arm 310 Mounting arm

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Yasuhiro Inokuchi 3-14-20 Higashinakano, Nakano-ku, Tokyo Kokusai Electric Co., Ltd. Inside (72) Inventor Hisashi Nomura 3-14-20 Higashinakano, Nakano-ku, Tokyo International Electric Co., Ltd. (72) Inventor Tetsuaki Inada 3-14-20 Higashinakano, Nakano-ku, Tokyo International Electric Co., Ltd.

Claims (11)

[Claims] 1. A substrate support having an upper substrate support and a lower substrate support stacked vertically, wherein each of the upper substrate support and the lower substrate support holds a substrate substantially horizontally. Wherein the lower substrate support has a first opening that exposes the entire substrate when the lower substrate support is viewed from below, and the upper substrate An upper resistance heater provided above the support base so as to face the upper substrate support base; and a lower resistance heater provided below the lower substrate support base and opposite the lower substrate support base. A substrate processing apparatus, comprising: 2. The substrate processing apparatus according to claim 1, wherein each of said upper substrate support and said lower substrate support mounts one of said substrates. 3. The apparatus according to claim 1, wherein the upper substrate support has a second opening for exposing the entire substrate when the upper substrate support is viewed from below.
The substrate processing apparatus according to any one of the preceding claims. 4. A substrate processing apparatus according to claim 1, wherein said substrate is a semiconductor wafer. 5. The substrate according to claim 1, wherein said substrate is a semiconductor wafer, and said first opening is substantially circular and slightly larger than said semiconductor wafer. Processing equipment. 6. The semiconductor wafer of claim 3, wherein each of said first and second openings is substantially circular and slightly larger than said semiconductor wafer. The substrate processing apparatus according to any one of the preceding claims. 7. The substrate processing apparatus further includes a reaction tube, the substrate support is provided in the reaction tube, and the upper resistance heater and the lower resistance heater are provided outside the reaction tube. The substrate processing apparatus according to claim 1, wherein: 8. An upper substrate supporting base is substantially horizontal, an upper surface of the lower substrate supporting base is substantially horizontal, and the upper substrate supporting base connects the substrate to an upper main surface of the substrate. The lower substrate support can be mounted so as to be substantially in the same plane as the upper surface of the upper substrate support, and the upper main surface of the substrate has the upper main surface of the lower substrate support. The substrate processing apparatus according to claim 7, wherein the substrate processing apparatus can be mounted so as to be substantially in the same plane as the upper surface, and can flow gas in the reaction tube in a substantially horizontal direction. 9. In a state where two substrates are vertically stacked and separated from each other between an upper resistance heater and a lower resistance heater, the entire upper substrate is connected to the upper resistance heater. A substrate processing method, wherein the substrate is directly heated by a heater, and the entire lower substrate is directly heated by the lower resistance heater to process the substrate. 10. A substrate processing method according to claim 9, wherein the processing of the substrate is performed using the substrate processing apparatus according to any one of claims 1 to 8. 11. The substrate processing method according to claim 9, wherein said substrate is a semiconductor wafer.