JPH11103098A - Thermoelectric conversion material - Google Patents

Thermoelectric conversion material

Info

Publication number
JPH11103098A
JPH11103098A JP9263603A JP26360397A JPH11103098A JP H11103098 A JPH11103098 A JP H11103098A JP 9263603 A JP9263603 A JP 9263603A JP 26360397 A JP26360397 A JP 26360397A JP H11103098 A JPH11103098 A JP H11103098A
Authority
JP
Japan
Prior art keywords
thermoelectric
thermoelectric conversion
temperature
substance
powder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9263603A
Other languages
Japanese (ja)
Other versions
JP3476343B2 (en
Inventor
Hirotaka Inagaki
浩貴 稲垣
Seiichi Suenaga
誠一 末永
Keizo Shimamura
慶三 島村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP26360397A priority Critical patent/JP3476343B2/en
Publication of JPH11103098A publication Critical patent/JPH11103098A/en
Application granted granted Critical
Publication of JP3476343B2 publication Critical patent/JP3476343B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To provide material exhibiting excellent thermoelectric characteristics in a wide temperature range up to about 100-1000 K. SOLUTION: At least one kind of element of 0.001-60 at.% which is selected out of B, C, N and O is added to material (M(1-2x) M'x M"x )A (0<x<=0.5) constituted of M constituted of at least one kind of element selected out of Co, Rf and Ir, M' constituted of at least one kind of element selected out of Fe, Ru and Os, M" constituted of at least one kind of element selected out of Ni, Pd and Pt, and A constituted of at least one kind of element selected out of P, As and Sb.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明に属する技術分野】本発明は、熱電素子に利用さ
れる熱電変換材料に関するものである。
The present invention relates to a thermoelectric conversion material used for a thermoelectric element.

【0002】[0002]

【従来の技術】熱電変換材料の高効率化はこの技術の実
用化が始まったころからの課題であり、近年長い低迷期
を脱して比較的組織だった研究開発が行われるようにな
った。このような状況が生まれた原因の一つとしてはエ
ネルギー・環境問題への関心の高まりである。熱電発電
技術は特に未利用の熱エネルギーの有効利用技術として
応用することが強く望まれており、また、逆変換である
熱電冷却技術は文字通りのフロンフリー冷却・冷凍技術
として、電子デバイスの冷却やIC製造プロセスにおける
温度調整システムばかりでなく冷蔵庫や空調機への応用
が期待されている。
2. Description of the Related Art Efficiency of thermoelectric conversion materials has been a problem since the practical use of this technology began, and in recent years, after a long sluggish period, relatively organized research and development has been performed. One of the causes of this situation is the growing interest in energy and environmental issues. It is strongly desired that thermoelectric power generation technology be applied particularly as an effective utilization technology of unused thermal energy.In addition, thermoelectric cooling technology, which is an inverse conversion, is a literally chlorofluorocarbon-free cooling / refrigeration technology for cooling electronic devices. It is expected to be applied not only to temperature control systems in IC manufacturing processes but also to refrigerators and air conditioners.

【0003】熱電変換材料の変換効率は、各々の材料の
物性値を反映する熱電性能指数Zで決まる。Z=α2 /
ρκ(αはゼーベック係数,ρは電気抵抗率,κは熱伝
導率,μは移動度,μL は全熱伝導率の格子振動による
熱伝導成分。尚、Zはm13/2 μ/κL (m1 は電子ま
たは正孔の有効質量)に比例する)で表される熱電性能
指数が大きい材料ほど、優れた熱電変換効率が得られ
る。すなわち、熱を通しにくく(熱伝導率が小さく)、
電気を良く通し(比抵抗が小さい)、熱起電力が大きい
(セーベック係数が大きい)材料が高効率材料となる。
また、このときの発電変換効率η[%]はZを用いてη
=[ΔT/{(4/Z)+2Th −(ΔT/2)}]×
100[%](ΔTは高温部と低温部の温度差,Zは材
料の熱電性能指数,Th は高温部の絶対温度)のように
表せる。α、ρおよびκは温度により変化することか
ら、もちろんZも温度依存性を持ち、材料によって最大
値をとる温度も異なる。したがって、熱電変換材料の高
効率化を進めるにあたって、使用温度範囲全般において
Zが大きいことが重要であり、さらに、ΔTを大きくで
きる材料ほど有利となる。
[0003] The conversion efficiency of a thermoelectric conversion material is determined by a thermoelectric performance index Z that reflects the physical properties of each material. Z = α2 /
ρκ (α is the Seebeck coefficient, ρ is the electrical resistivity, κ is the thermal conductivity, μ is the mobility, μL is the heat conduction component due to lattice vibration of the total thermal conductivity. Z is m1 3/2 μ / κL ( The material having a larger thermoelectric figure of merit (m1 is proportional to the effective mass of electrons or holes)) has better thermoelectric conversion efficiency. In other words, it is difficult to conduct heat (low thermal conductivity),
A material that conducts electricity well (has a low specific resistance) and has a large thermoelectromotive force (has a large Savebeck coefficient) is a highly efficient material.
At this time, the power generation conversion efficiency η [%] is calculated by using Z as η
= [ΔT / {(4 / Z) + 2T h - (ΔT / 2)}] ×
100 [%] (ΔT the temperature difference between the high temperature part and the low temperature part, Z is the thermoelectric figure of merit of the material, the T h the absolute temperature of the high temperature portion) expressed as. Since α, ρ, and κ change with temperature, Z naturally has temperature dependence, and the temperature at which the maximum value is obtained differs depending on the material. Therefore, in order to improve the efficiency of the thermoelectric conversion material, it is important that Z is large over the entire operating temperature range, and the material that can increase ΔT is more advantageous.

【0004】従来から知られている熱電変換材料にはB
2 Te3 化合物,PbTe化合物,Si−Ge化合
物,Fe−Si化合物等があるが、いずれの材料も無次
元性能指数ZTが1を超えることはない。唯一、Bi2
Te3 化合物だけが200〜400K程度の温度範囲で
ZT=1に極めて近い値を示す。しかしながら、優れた
性能を持つBi2 Te3 化合物も高温で不安定になりや
すいという問題を抱えており、573K以下で使用され
るのが通例となっているため、専ら発電用としてよりも
電子冷却用として用いられている。熱電変換材料がガス
タービン等の廃熱利用発電等に実際に利用されるために
は1000K付近までの耐熱性が要求される。従来から
知られている材料では、Fe−Ni化合物がこの温度域
でも比較的安定で良好な性能を示すが、それでも878
KでZT=0.2程度であり、得られる電力はごく僅か
である。したがって、より多くの電力を得るためには、
100〜1000K程度の比較的高温までの広い温度範
囲において、優れた性能を示す発電用熱電変換材料が必
要であり、そのような材料開発が望まれている。
Conventionally known thermoelectric conversion materials include B
There are an i 2 Te 3 compound, a PbTe compound, a Si—Ge compound, an Fe—Si compound and the like, but none of the materials has a dimensionless figure of merit ZT exceeding 1. Only Bi 2
Only the Te 3 compound shows a value very close to ZT = 1 in a temperature range of about 200 to 400K. However, Bi 2 Te 3 compounds having excellent performance also have a problem that they tend to be unstable at high temperatures, and since they are generally used at 573K or lower, they are generally used for electronic cooling rather than for power generation. It is used for In order for the thermoelectric conversion material to be actually used for power generation using waste heat such as a gas turbine, heat resistance up to around 1000K is required. In the conventionally known materials, the Fe—Ni compound is relatively stable and shows good performance even in this temperature range, but it is still 878
K is about ZT = 0.2, and the obtained power is very small. So to get more power,
A thermoelectric conversion material for power generation that exhibits excellent performance in a wide temperature range up to a relatively high temperature of about 100 to 1000 K is required, and development of such a material is desired.

【0005】最近、スクッテルダイト構造を持つXY3
化合物(X=Co,Rh,Ir;Y=P,As,Sb)
が新しい熱電変換材料として注目されている。XY3
合物の中でもCoSb3 ,RhSb3 ,IrSb3 アン
チモナイドは特有のバンド構造とキャリア輸送特性を持
つ半導体であり、優れた熱電特性を有する。このCoS
b3 系化合物において、現在最も優れた熱電特性を示す
物質はCoSb3 にTe,AsおよびIrをわずかに添
加したCo0.97Ir0.03Sb2.81Te0.04As0.15であ
り、650〜750KにおいてZT=0.6程度の優れ
た特性を示すが、この温度範囲以外では急激に特性が悪
くなる。ところが、例えばガスタービンなどの廃熱を利
用した発電プラントにおいて、LNGを冷却媒体、ケー
シング等から得られる熱源を高温媒体とした場合、20
0〜900Kの温度差が得られ、この廃熱を有効に電気
に変換しようとするとこの全温度範囲で優れた熱電特性
を示す材料が必要になる。したがって、既存の材料ある
いは先に述べたこれまでのCoSb3 系化合物よりも広
い温度範囲で優れた特性を持つ材料の開発が望まれる。
このような材料が発見されれば、これまでにない発電用
熱電変換材料として実用化されることが予想され、工業
的価値も大きい。
Recently, XY 3 having a skutterudite structure
Compound (X = Co, Rh, Ir; Y = P, As, Sb)
Are attracting attention as new thermoelectric conversion materials. Among the XY 3 compounds, CoSb 3 , RhSb 3 , and IrSb 3 antimonides are semiconductors having specific band structures and carrier transport characteristics, and have excellent thermoelectric characteristics. This CoS
Among the b3 type compounds, the substance exhibiting the most excellent thermoelectric properties at present is Co 0.97 Ir 0.03 Sb 2.81 Te 0.04 As 0.15 obtained by slightly adding Te, As and Ir to CoSb 3 , and ZT = 0.6 at 650 to 750K. Although the characteristics are excellent to some extent, the characteristics rapidly deteriorate outside the temperature range. However, for example, in a power plant utilizing waste heat such as a gas turbine, when LNG is used as a cooling medium and a heat source obtained from a casing or the like is used as a high-temperature medium,
A temperature difference of 0 to 900 K is obtained, and in order to effectively convert this waste heat into electricity, a material that exhibits excellent thermoelectric properties in this entire temperature range is required. Therefore, it is desired to develop an existing material or a material having better characteristics in a wider temperature range than the above-mentioned conventional CoSb 3 -based compound.
If such a material is discovered, it is expected that it will be put to practical use as a thermoelectric conversion material for power generation, and its industrial value is great.

【0006】[0006]

【発明が解決しようとする課題】上述したように、Bi
2 Te3 化合物は573K付近で優れた特性を示すもの
の、高温で非常に不安定なことから、主に電子冷却用と
して使用されており、耐熱性が要求される発電用として
は使用できない。Fe−Si化合物等の優れた耐熱性を
示す熱電変換材料も多数発見されているが、いずれの材
料においても、その熱電特性はBi2 Te3 化合物に比
べて著しく悪い。したがって、より多くの電力を得るた
めには、低温から比較的高温までの広い温度範囲におい
て優れた熱電特性を示す熱電変換材料が必要とされる。
最近、CoSb3 系化合物がこのような問題を解決でき
る物質として興味が持たれているが、熱電特性としては
650〜700KにおいてZT=0.6と適用範囲は狭
い。したがって、より広い範囲で安定して優れた特性が
得られる材料開発が必要である。
SUMMARY OF THE INVENTION As described above, Bi
The 2Te 3 compound exhibits excellent properties at around 573K, but is very unstable at high temperatures, so it is mainly used for electronic cooling and cannot be used for power generation requiring heat resistance. Many thermoelectric conversion materials exhibiting excellent heat resistance, such as Fe-Si compounds, have been found, but the thermoelectric properties of any of these materials are significantly worse than those of Bi 2 Te 3 compounds. Therefore, in order to obtain more electric power, a thermoelectric conversion material exhibiting excellent thermoelectric properties in a wide temperature range from a low temperature to a relatively high temperature is required.
Recently, a CoSb 3 -based compound has been attracting interest as a material capable of solving such a problem, but its thermoelectric properties are narrow at 650 to 700K and ZT = 0.6. Therefore, it is necessary to develop a material that can obtain excellent characteristics stably over a wider range.

【0007】本発明は、このような問題を解決するため
になされたものであり、100Kから1000K程度の
非常に広い温度域で、特に700K以上の高温で優れた
熱電特性を示す熱電変換材料を提供する。
The present invention has been made to solve such a problem, and a thermoelectric conversion material exhibiting excellent thermoelectric properties in a very wide temperature range of about 100K to 1000K, particularly at a high temperature of 700K or more. provide.

【0008】[0008]

【課題を解決するための手段】本発明は、Co,Rhお
よびIrから選ばれる少なくとも1種類の元素からなる
Mと、Fe,RuおよびOsから選ばれる少なくとも1
種類の元素からなるM' と、Ni,PdおよびPtから
選ばれる少なくとも1種類の元素からなるM''と、P,
AsおよびSbから選ばれる少なくとも1種類の元素か
らなるAから構成される物質(M(1-2x)M 'x M''x
3 (0 <x ≦0.5 )に、B,C,NおよびOから選ば
れる少なくとも1 種類の元素を0.001 〜60at.%添加
した熱電変換材料である。
According to the present invention, at least one element selected from the group consisting of M, at least one element selected from Co, Rh, and Ir, and at least one element selected from Fe, Ru, and Os is provided.
M ′ comprising at least one element selected from Ni, Pd and Pt;
As and at least one substance consisting of composed A from elements selected from Sb (M (1-2x) M ' x M''x)
A 3 (0 <x ≦ 0.5) is provided with at least one element selected from the group consisting of B, C, N and O in an amount of 0.001 to 60 at. % Thermoelectric conversion material.

【0009】CoSb3 相は、1043K以下において
安定でCoSb2 相とSb相からの包晶反応によって形
成され、CoAs3 に代表されるIm3 型の結晶構造を
持つ。この構造は、スクッテルダイト構造と呼ばれ、単
位格子内に8 個のCo原子と24個のSb原子の計32個の
原子から構成される立方格子である。このとき、Sb原
子は特異な結晶状態にあり、単位格子中に4個のSb原
子から形成されるアンチモンリングを6 個形成する。単
位格子は8個の小格子で形成されるが、このアンチモン
リングが形成される小格子は6個であり、残りの2個に
は形成されない。すなわち、単位格子中にアンチモンリ
ングの存在しない2個のボイドが含まれることになる。
The CoSb 3 phase is stable at 1043 K or less, is formed by a peritectic reaction between the CoSb 2 phase and the Sb phase, and has an Im 3 type crystal structure represented by CoAs 3 . This structure is called a skutterudite structure, and is a cubic lattice composed of a total of 32 atoms of 8 Co atoms and 24 Sb atoms in a unit cell. At this time, the Sb atoms are in a unique crystal state, and form six antimony rings formed of four Sb atoms in the unit cell. The unit lattice is formed by eight small lattices, but the antimony ring is formed by six small lattices, and the remaining two lattices are not formed. That is, two voids in which no antimony ring exists are included in the unit cell.

【0010】ところで、B,C,NおよびOのような軽
元素は一般的に侵入型元素として知られ、化合物中の格
子の隙間を埋めるように位置する。CoSb3 相におい
ても例外ではなく、これらの軽元素は格子の隙間を埋め
るように侵入する。したがって、スクッテルダイト構造
特有のアンチモンリングの存在しない2個のボイドにも
これらの元素は侵入し、ボイドの存在しない密な構造が
作られる。このような構造を持つ物質では、ボイド中に
充填された軽元素の存在によりフォノン散乱が抑制さ
れ、熱伝導率を大幅に減少させることができる。それに
加えて、本来のこの構造が持つ移動度が大きい利点を利
用することから、性能指数を大幅に向上させることがで
きる。
By the way, light elements such as B, C, N and O are generally known as interstitial elements and are located so as to fill gaps in lattices in the compound. Even in the CoSb 3 phase, these light elements penetrate so as to fill the lattice gap. Therefore, these elements also penetrate into two voids where there is no antimony ring specific to the skutterudite structure, and a dense structure without voids is created. In a substance having such a structure, phonon scattering is suppressed due to the presence of the light element filled in the void, and the thermal conductivity can be significantly reduced. In addition, since the original advantage of this structure having a large mobility is utilized, the figure of merit can be significantly improved.

【0011】本発明における熱電材料は、このような
B,C,NおよびOから選ばれる少なくとも1種類の元
素を添加したCoSb3 系物質において、VIII族元素で
あるCo,Rh,Irを周期律表の両隣の原子であるF
e,Ru,OsとNi,Pd,Ptで置き換えることを
特徴としている。このような元素の置き換えを行っても
その物質の基本的な構造は置換しない物質と同様であ
る。例えばCoSb3 において、CoをFe0.5 Ni
0.5 と完全に置き換えた場合、格子常数,融点等に僅か
な変化が生ずるがその物質の基本的な構造はCoSb3
と変わらない。しかし、この置き換えを行うことによ
り、物質中のフォノン散乱が効果的に抑制され、置換し
ていない物質に比して熱伝導率が大幅に低下するととも
に、100 〜1000 Kの広い温度範囲において安定して高い
ゼーベック係数が得られる。同様にVb族原子であるP,
As,Sbをその両隣の原子であるSi,Ge,Snと
S,Se,Teで置き換えても、同様の効果が期待でき
る。このような効果を利用することにより、これまで問
題であったCoSb3 系熱電材料の高温側での熱電特性
を格段に向上させ、広い温度範囲での使用が可能とな
る。
[0011] Thermoelectric material of the invention, such B, C, in the CoSb 3 based material prepared by adding at least one element selected from N and O, Co is a Group VIII element, Rh, periodic and Ir F which is the atom on both sides of the table
e, Ru, Os and Ni, Pd, Pt. Even if such an element is replaced, the basic structure of the substance is the same as that of a substance that is not replaced. For example, in CoSb3, Co is Fe 0.5 Ni
When completely replaced with 0.5 , slight changes occur in the lattice constant, melting point, etc., but the basic structure of the substance is CoSb 3
And does not change. However, by performing this replacement, phonon scattering in the material is effectively suppressed, and the thermal conductivity is significantly reduced as compared with the material that is not replaced, and stable over a wide temperature range of 100 to 1000 K. As a result, a high Seebeck coefficient is obtained. Similarly, P, which is a Vb group atom,
The same effect can be expected by replacing As and Sb with Si, Ge, and Sn, which are both adjacent atoms, with S, Se, and Te. By utilizing such an effect, the thermoelectric properties of the CoSb 3 -based thermoelectric material, which has been a problem so far, on the high temperature side can be remarkably improved, and it can be used in a wide temperature range.

【0012】また、これまでのCoSb3 系熱電材料は
原料に高純度材を用いないと良い特性が得られないとい
った問題を有していたが、本発明の材料では純度による
影響はそれほど問題にならず、99.9%程度の原材料
純度があればよいため、大幅なコストダウンが可能とな
る。
Although the conventional CoSb 3 -based thermoelectric material has a problem that good characteristics cannot be obtained unless a high-purity material is used as a raw material, the influence of purity on the material of the present invention is not so significant. Instead, the raw material purity only needs to be about 99.9%, so that the cost can be significantly reduced.

【0013】[0013]

【発明の実施の形態】以下、本発明を実施するための形
態について説明する。本発明の熱電変換材料は、Co,
RhおよびIrから選ばれる少なくとも1種類の元素か
らなるMと、Fe,RuおよびOsから選ばれる少なく
とも1種類の元素からなるM' と、Ni,PdおよびPtか
ら選ばれる少なくとも1種類の元素からなるM''と、
P,AsおよびSbから選ばれる少なくとも1種類の元
素からなるAから構成される物質(M(1-2x)M 'x M''
x )A3 (0 <x ≦0.5 )に、B,C,NおよびOから
選ばれる少なくとも1種類の元素を0.001 〜60at.%
添加することを特徴としている。
Embodiments of the present invention will be described below. The thermoelectric conversion material of the present invention comprises Co,
M consisting of at least one element selected from Rh and Ir, M 'consisting of at least one element selected from Fe, Ru and Os, and at least one element selected from Ni, Pd and Pt M ''
A substance composed of A consisting of at least one element selected from P, As and Sb (M (1-2x) M ' x M''
x ) At least one element selected from B, C, N and O is added to A 3 (0 <x ≦ 0.5) in an amount of 0.001 to 60 at. %
It is characterized by being added.

【0014】この熱電変換材料は、例えば焼結法,アー
ク溶解法あるいは傾斜凝固法によって形成することがで
きるが、予備熱処理を加えて固相反応させた粉末に高温
焼結法を用いるのが簡便で適当な手法である。
This thermoelectric conversion material can be formed by, for example, a sintering method, an arc melting method or a gradient solidification method. However, it is convenient to use a high-temperature sintering method for a powder which has been subjected to a preliminary heat treatment and subjected to a solid phase reaction. Is an appropriate method.

【0015】以下に具体的な方法を記す。原料の純度は
99.9以上であることが望ましい。また、作製した試料の
(M(1-2x)M 'x M''x )とAの比は正確に1:3とな
る方が好ましく、この組成比から10%以上ずれると特性
が著しく低下する。正確に1:3の組成物を得るために
は、蒸気圧が高く試料作製段階での損失量が多いA元素
を若干過剰に混合するとよい。
A specific method will be described below. Raw material purity
Desirably, it is 99.9 or more. Further, (M (1-2x) M ' x M''x) and A ratio of samples prepared exactly 1: preferably those causing 3 significantly characteristics when this composition ratio deviates more than 10% reduction I do. In order to obtain an exactly 1: 3 composition, it is advisable to mix the element A, which has a high vapor pressure and a large amount of loss in the sample preparation stage, in a slightly excessive amount.

【0016】所定量秤量した各粉末を、Vミキサー、瑪
瑙乳鉢等を用いた混合、あるいはボールミル等を用いた
メカニカルアロイング等の手法により十分攪拌した後、
アルミナ管に混合粉末を詰め、さらに石英管中に真空封
入する。このとき、試料の酸化を防ぐために石英管中の
真空度を1 ×10-3Pa以上の高真空にすることが好まし
い。封入した石英管をその物質の融点以下の温度で熱処
理し、固相反応させる。この熱処理としては873 〜1123
Kで1〜100 時間で十分である。固相反応して凝集した
反応物を瑪瑙乳鉢で粉砕し、再度粉末状にした後、ホッ
トプレスによりその物質の融点以下の温度で焼結する。
このときの焼結条件としては、プレス圧力10〜100 MP
a,873K〜1123K、0.1〜100時間で十分
であり、この条件で理論密度の99 %以上の密度を持つ物
質が得られる。また、この熱処理は石英管中雰囲気を真
空ではなく、ArやHe等の不活性ガス雰囲気とすると
蒸気圧の高いA元素の蒸発を抑制することができ、目的
とする組成の物質が得易くなる。
A predetermined amount of the weighed powders is sufficiently stirred by a method such as mixing using a V mixer, an agate mortar or the like, or mechanical alloying using a ball mill or the like.
The mixed powder is packed in an alumina tube, and further vacuum-sealed in a quartz tube. At this time, in order to prevent oxidation of the sample, it is preferable to set the degree of vacuum in the quartz tube to a high vacuum of 1 × 10 −3 Pa or more. The sealed quartz tube is heat-treated at a temperature equal to or lower than the melting point of the substance to cause a solid-phase reaction. This heat treatment is 873 ~ 1123
For K, 1 to 100 hours is sufficient. The reaction product agglomerated by the solid phase reaction is pulverized in an agate mortar, powdered again, and then sintered by hot pressing at a temperature lower than the melting point of the substance.
The sintering conditions at this time were a press pressure of 10 to 100 MP
a, 873K to 1123K, 0.1 to 100 hours is sufficient. Under these conditions, a substance having a density of 99% or more of the theoretical density can be obtained. In this heat treatment, when the atmosphere in the quartz tube is not a vacuum but an inert gas atmosphere such as Ar or He, the evaporation of element A having a high vapor pressure can be suppressed, and a substance having a desired composition can be easily obtained. .

【0017】BやCを添加する際には、その粉末を単純
に添加すれば良いが、NやOの添加は困難である。よっ
て、NやOの添加はN,O無添加物質を作製した後に、
窒素分圧あるいは酸素分圧10Pa以下の雰囲気中で熱
処理を加えることによって行う。あるいは、原料粉に窒
化物や酸化物を使用しても同様にNやOを含有させるこ
とができる。
When adding B or C, the powder may be simply added, but it is difficult to add N or O. Therefore, the addition of N or O is performed after the N, O-free substance is prepared.
The heat treatment is performed in an atmosphere having a nitrogen partial pressure or an oxygen partial pressure of 10 Pa or less. Alternatively, N or O can be similarly contained even when a nitride or an oxide is used for the raw material powder.

【0018】このようにしてB,C,NおよびOから選
ばれる少なくとも1種類の元素を0.001 〜60at.%添
加することができる。添加量が多いと起電力が低下する
問題が生じ、少ないと比抵抗や熱伝導率が大きくなる傾
向がある。そのため0.1 〜20at.%の範囲にすること
がより望ましい。
As described above, at least one element selected from B, C, N and O is used in an amount of 0.001 to 60 at. % Can be added. If the amount of addition is large, there arises a problem that the electromotive force is reduced. If the amount is small, specific resistance and thermal conductivity tend to increase. Therefore, 0.1 to 20 at. % Is more desirable.

【0019】また、x の値を増加させるとゼーベック係
数のピークが高温側に移動するため、使用する温度範囲
によって、x 値を変化させると良い。すなわち、高温仕
様とするにはx 値を増加させれば良い。例えば、300 〜
600 K程度で使用する時にはxの値を0.01〜0.1 に,60
0 〜900 K程度で使用する時にはxの値を0.15〜0.2で
使用すればよい。但し、Xが少ないかったり、多すぎた
りすると、熱電変換効率が低下するため、xの値は0.01
〜0.2 の範囲内に設定することが望ましい。
When the value of x is increased, the peak of the Seebeck coefficient moves to the higher temperature side. Therefore, it is preferable to change the value of x according to the temperature range to be used. That is, in order to obtain a high temperature specification, the x value may be increased. For example, 300 ~
When using at about 600 K, set the value of x to 0.01 to 0.1,
When used at about 0 to 900K, the value of x may be used at 0.15 to 0.2. However, if X is too small or too large, the thermoelectric conversion efficiency is reduced.
It is desirable to set within the range of ~ 0.2.

【0020】また、本願発明において、M’とM’’の
比率はxで同一であるが、厳密に同一である必要はな
く、具体的には10%程度の差であればその量に違いが
あっても許容される。
In the present invention, the ratio between M ′ and M ″ is the same as x, but does not have to be strictly the same. Specifically, if the difference is about 10%, the amount may differ. Is acceptable.

【0021】また、同一試料内で低温側から高温側に向
かってx 値を増加させるような傾斜型の試料を作製すれ
ば、さらに広い温度域で優れた特性を持つ材料が得られ
る。以上、本発明によれば、100 〜1000Kの広い温度域
で優れた熱電特性を示す熱電変換材料が作製でき、かつ
大幅な低コスト化が達成される。
Further, if an inclined sample is manufactured in which the x value increases from the low temperature side to the high temperature side in the same sample, a material having excellent characteristics in a wider temperature range can be obtained. As described above, according to the present invention, a thermoelectric conversion material exhibiting excellent thermoelectric properties in a wide temperature range of 100 to 1000 K can be manufactured, and a significant cost reduction can be achieved.

【0022】[0022]

【実施例】次に、本発明の具体的な実施例について説明
する。 実施例1 純度99.9 %,粒径325 メッシュ以下のFe粉末,Co粉
末,Ni粉末とSb粉末と純度99 %,粒径325 メッシュ
以下のB粉末を原子当量比で2:16:2:60:20の割合
で混合した。
Next, specific examples of the present invention will be described. Example 1 Fe powder, Co powder having a purity of 99.9% and a particle size of 325 mesh or less, and B powder having a purity of 99% and a particle size of 325 mesh or less with an atomic equivalent ratio of 2: 16: 2: 60: 20 were mixed.

【0023】得られた混合物をVミキサーを用いて十分
攪拌した後、混合粉末をアルミナ管に詰め、さらに石英
管中に真空封入した。このときの真空度は1 ×10-6Paで
あった。封入した石英管を873Kで24時間予備熱処理し、
固相反応させた。固相反応して凝集した反応物を瑪瑙乳
鉢を用いて粉砕し再度粉末状にした後、ホットプレスに
よりその物質の融点以下の温度で焼結した。このときの
焼結条件としては、1×10-6Paの真空中でプレス圧
力40MPa,873K、1時間とした。作製した試料の
密度を測定したところ、理論密度の99% 以上の密度を持
つ物質が得られた。この焼結体を断面積2cm2 ,高さ
1cmの円柱状に加工した後、低温側を40K に固定し高
温側を徐々に加熱し、温度差を与え開放端電圧と内部抵
抗を測定した。
After the obtained mixture was sufficiently stirred using a V mixer, the mixed powder was filled in an alumina tube and further sealed in a quartz tube under vacuum. The degree of vacuum at this time was 1 × 10 −6 Pa. The sealed quartz tube is pre-heated at 873K for 24 hours,
A solid phase reaction was performed. The reaction product agglomerated by the solid-phase reaction was pulverized using an agate mortar to obtain a powder again, and then sintered by a hot press at a temperature lower than the melting point of the substance. The sintering conditions at this time were a pressure of 40 MPa, 873 K, and 1 hour in a vacuum of 1 × 10 −6 Pa. When the density of the manufactured sample was measured, a substance having a density of 99% or more of the theoretical density was obtained. After processing this sintered body into a columnar shape having a cross-sectional area of 2 cm 2 and a height of 1 cm, the low-temperature side was fixed at 40 K and the high-temperature side was gradually heated to give a temperature difference, and the open-end voltage and the internal resistance were measured.

【0024】測定した値からその物質のゼーベック係数
αと比抵抗ρを測定したところ350Kにおいてα=25
0[mV/K]、ρ=0.0015[Wcm]、700
Kにおいてα=280[mV/K]、ρ=0.0010
[Wcm] であった。40K〜1000Kまでを1 回の測定
とし、30回の測定を繰り返したが、その特性に変化は見
られなかった。また、1000 Kにおいて1 時間保持した後
に同様の測定を行っても特性に変化は見られなかった。
以上の結果から、作製した試料の350 Kにおけるパワー
因子は4.167×10-5W/cmK2 、700Kにお
けるパワー因子は7.840×10-5W/cmK2 とな
り、十分実用的な値となった。
The Seebeck coefficient α and the specific resistance ρ of the substance were measured from the measured values.
0 [mV / K], ρ = 0.015 [Wcm], 700
In K, α = 280 [mV / K], ρ = 0.0010
[Wcm]. One measurement was performed from 40K to 1000K, and the measurement was repeated 30 times, but no change was observed in the characteristics. In addition, even if the same measurement was performed after holding at 1000 K for 1 hour, no change was observed in the characteristics.
From the above results, the power factor at 350 K of the manufactured sample was 4.167 × 10 −5 W / cmK 2 , and the power factor at 700 K was 7.840 × 10 −5 W / cmK 2 , which was a sufficiently practical value. became.

【0025】実施例2 純度99.9% 、 粒径325 メッシュ以下のRu粉末,Rh粉
末,Pd粉末とAs粉末と純度99.99 %,粒径325 メッ
シュ以下のC粉末を原子当量比で5:10:5:60:20の
割合で混合した。Vミキサーを用いて十分攪拌した後、
混合粉末をアルミナ管に詰め、さらに石英管中に真空封
入した。このときの真空度は1×10-6Paであった。
封入した石英管を873 Kで24時間予備熱処理し、固相反
応させた。固相反応して凝集した反応物を瑪瑙乳鉢を用
いて粉砕し再度粉末状にした後、ホットプレスによりそ
の物質の融点以下の温度で焼結した。このときの焼結条
件としては、1×10-6Paの真空中でプレス圧力40M
Pa,873 K、1時間とした。作製した試料の密度を測
定したところ、理論密度の99% 以上の密度を持つ物質が
得られた。この焼結体を断面積2cm2 ,高さ1cmの
円柱状に加工した後、低温側を40Kに固定し高温側を徐
々に加熱し、温度差を与え開放端電圧と内部抵抗を測定
した。測定した値からその物質のゼーベック係数αと比
抵抗ρを測定したところ350 Kにおいてα=180[m
V/K],ρ=0.0014[Wcm]、700Kにおいて
α=230[mV/K],ρ=0.0009=[Wc
m]であった。40K〜1000K までを1回の測定とし、30
回の測定を繰り返したが、その特性に変化は見られなか
った。また、1000Kにおいて1時間保持した後に同様の
測定を行っても特性に変化は見られなかった。以上の結
果から、作製した試料の350 Kにおけるパワー因子は
2.314×10-5W/cmK2 、700 Kにおけるパワ
ー因子は5.878×10-5W/cmK2 となり、十分
実用的な値となった。
Example 2 Ru powder, Rh powder, Pd powder and As powder having a purity of 99.9% and a particle size of 325 mesh or less and a C powder having a purity of 99.99% and a particle size of 325 mesh or less are 5: 10: 5 in atomic equivalent ratio. : 60: 20. After sufficiently stirring using a V mixer,
The mixed powder was packed in an alumina tube, and further vacuum-sealed in a quartz tube. At this time, the degree of vacuum was 1.times.10@-6 Pa.
The sealed quartz tube was subjected to a preliminary heat treatment at 873 K for 24 hours to cause a solid phase reaction. The reaction product agglomerated by the solid-phase reaction was pulverized using an agate mortar to obtain a powder again, and then sintered by a hot press at a temperature lower than the melting point of the substance. The sintering conditions at this time were as follows: a pressure of 40 M in a vacuum of 1 × 10 −6 Pa.
Pa, 873 K, 1 hour. When the density of the manufactured sample was measured, a substance having a density of 99% or more of the theoretical density was obtained. After processing this sintered body into a columnar shape having a cross-sectional area of 2 cm 2 and a height of 1 cm, the low-temperature side was fixed at 40 K and the high-temperature side was gradually heated to give a temperature difference, and the open-end voltage and the internal resistance were measured. When the Seebeck coefficient α and the specific resistance ρ of the substance were measured from the measured values, at 350 K, α = 180 [m
V / K], ρ = 0.0014 [Wcm], α = 230 [mV / K] at 700K, ρ = 0.0009 = [Wc
m]. One measurement from 40K to 1000K, 30
The measurement was repeated a number of times, but no change was observed in the characteristics. In addition, even if the same measurement was performed after holding at 1000 K for 1 hour, no change was observed in the characteristics. From the above results, the power factor at 350 K of the manufactured sample was 2.314 × 10 −5 W / cmK 2 , and the power factor at 700 K was 5.878 × 10 −5 W / cmK 2 , which was a sufficiently practical value. It became.

【0026】実施例3 純度99.9%,粒径325 メッシュ以下のOs粉末,Ir粉
末,Pt粉末,Sb粉末と純度99 %,粒径325 メッシュ以
下のB 粉末を原子当量比で20:10:40:10:20の割合で
混合した。Vミキサーを用いて十分攪拌した後、混合粉
末をアルミナ管に詰め、さらに石英管中に真空封入し
た。このときの真空度は1×10-6Paであった。封入
した石英管を873 Kで24時間予備熱処理し、固相反応さ
せた。固相反応して凝集した反応物を瑪瑙乳鉢を用いて
粉砕し再度粉末状にした後、ホットプレスによりその物
質の融点以下の温度で焼結した。このときの焼結条件と
しては、1×10-6Paの真空中でプレス圧力40MP
a,873 K、1時間とした。作製した試料の密度を測定
したところ、理論密度の99%以上の密度を持つ物質が得
られた。この焼結体を断面積2cm2 ,高さ1cmの円
柱状に加工した後、低温側を40Kに固定し高温側を徐々
に加熱し、温度差を与え開放端電圧と内部抵抗を測定し
た。測定した値からその物質のゼーベック係数αと非抵
抗ρを測定したところ350 Kにおいてα=270[mV
/K],ρ=0.0016[Wcm]、700 Kにおいて
α=300[mV/K]、ρ=0.0012[Wcm]
であった。40K〜1000Kまでを1回の測定とし、30回の
測定を繰り返したが、その特性に変化は見られなかっ
た。また、1000Kにおいて1時間保持した後に同様の測
定を行っても特性に変化は見られなかった。以上の結果
から、作製した試料の350 Kにおけるパワー因子は4.
5563×10-5W/cmK2 、700 Kにおけるパワー
因子は7.500×10-5W/cmK2 となり、十分実
用的な値となった。 実施例4 図1は本実施例の熱電モジュールの概略平面図、図2は
その断面図である。
Example 3 Os powder, Ir powder, Pt powder and Sb powder having a purity of 99.9% and a particle size of 325 mesh or less and a B powder having a purity of 99% and a particle size of 325 mesh or less were mixed in an atomic equivalent ratio of 20:10:40. : 10:20. After sufficiently stirring using a V mixer, the mixed powder was packed in an alumina tube, and further sealed in a quartz tube under vacuum. At this time, the degree of vacuum was 1.times.10@-6 Pa. The sealed quartz tube was subjected to a preliminary heat treatment at 873 K for 24 hours to cause a solid phase reaction. The reaction product agglomerated by the solid-phase reaction was pulverized using an agate mortar to obtain a powder again, and then sintered by a hot press at a temperature lower than the melting point of the substance. The sintering conditions at this time were as follows: a pressure of 40 MPa in a vacuum of 1 × 10 −6 Pa.
a, 873 K, 1 hour. When the density of the prepared sample was measured, a substance having a density of 99% or more of the theoretical density was obtained. After processing this sintered body into a columnar shape having a cross-sectional area of 2 cm 2 and a height of 1 cm, the low-temperature side was fixed at 40 K and the high-temperature side was gradually heated to give a temperature difference, and the open-end voltage and the internal resistance were measured. When the Seebeck coefficient α and the non-resistance ρ of the substance were measured from the measured values, at 350 K, α = 270 [mV
/ K], ρ = 0.0016 [Wcm], at 700 K, α = 300 [mV / K], ρ = 0.0012 [Wcm]
Met. One measurement was performed from 40K to 1000K, and the measurement was repeated 30 times, but no change was observed in the characteristics. In addition, even if the same measurement was performed after holding at 1000 K for 1 hour, no change was observed in the characteristics. From the above results, the power factor at 350 K of the manufactured sample was 4.
The power factor at 5563 × 10 −5 W / cmK 2 and 700 K was 7.500 × 10 −5 W / cmK 2 , which was a sufficiently practical value. Embodiment 4 FIG. 1 is a schematic plan view of a thermoelectric module of the present embodiment, and FIG. 2 is a sectional view thereof.

【0027】次に、本発明の熱電変換材料を熱電モジュ
ールとして応用した時の実施例を図1、2を用いて説明
する。p 型熱電変換材料2として実施例1で作製した焼
結体を用い、同様の方法で得られた20Co−60Sb−20
B(at.%)焼結体をn型熱電変換材料2として用い
以下の方法で熱電モジュールを作製した。
Next, an embodiment in which the thermoelectric conversion material of the present invention is applied to a thermoelectric module will be described with reference to FIGS. Using the sintered body prepared in Example 1 as the p-type thermoelectric conversion material 2, 20Co-60Sb-20 obtained by the same method.
Using a B (at.%) Sintered body as the n-type thermoelectric conversion material 2, a thermoelectric module was manufactured by the following method.

【0028】2枚のアルミナ基板に図1に示すような配
線パターンとなるように銀ペーストを印刷した後、1m
m×1mm×1.8mmに切断したp型およびn型熱電
変換材料を図1のように配置し、銀ペーストを乾燥させ
てp型およびn型熱電変換材料を固着させた。図2はこ
のようにして作製した基体にリード線を取り付けて完成
した熱電モジュールの断面図である。以上のように作製
した熱電モジュール(素子数:42対,モジュール大きさ
18.5mm×21.5mm,厚さ2mm)の発電性能は、アル
ミナ基板間の温度差(室温付近)が3°Cのときに約60
mVの出力であった。この値は、発電モジュールとして
十分要求を満たすものであり、冷却用の熱電モジュール
としての性能も十分に有していることを示唆する結果で
もある。
After printing a silver paste on two alumina substrates so as to form a wiring pattern as shown in FIG.
The p-type and n-type thermoelectric conversion materials cut to m × 1 mm × 1.8 mm were arranged as shown in FIG. 1, and the silver paste was dried to fix the p-type and n-type thermoelectric conversion materials. FIG. 2 is a cross-sectional view of a thermoelectric module completed by attaching a lead wire to the substrate thus manufactured. Thermoelectric module fabricated as described above (42 elements, module size
The power generation performance of 18.5 mm x 21.5 mm, thickness of 2 mm) is about 60 when the temperature difference between alumina substrates (around room temperature) is 3 ° C.
The output was mV. This value sufficiently satisfies the requirements as a power generation module, and is also a result suggesting that the module has sufficient performance as a thermoelectric module for cooling.

【0029】冷却素子としての評価は、アルミニウム製
のヒートシンクを発熱面に取り付けて、温度30℃,湿度
90%の環境下で、素子に1Vの電圧を印加して行った。
このとき、冷却側の表面は数十秒で約−5°Cまで低下
すると同時に結露が始まり、その後、ほぼ一定の温度を
保った。この結果は、本熱電モジュールが冷却素子とし
ての性能も十分に備えていることを示唆するものであ
り、この条件で100 時間保持した場合においても、素子
の劣化は認められず、耐久性にも優れることを確認し
た。
The evaluation as a cooling element was performed by mounting an aluminum heat sink on the heat generating surface,
The test was performed by applying a voltage of 1 V to the device under an environment of 90%.
At this time, the surface on the cooling side dropped to about −5 ° C. in several tens of seconds, and at the same time dew condensation started, and thereafter, the temperature was kept almost constant. This result suggests that the thermoelectric module also has sufficient performance as a cooling element. We confirmed that it was excellent.

【0030】[0030]

【発明の効果】以上説明したように、本発明の熱電変換
材料は低温から比較的高温までの広い範囲において安定
して優れた熱電特性を示し、冷却用素子だけでなく廃熱
利用発電用にも利用できる高性能材料であり、かつ低コ
スト化が達成できるため、工業的価値は極めて大きい。
As described above, the thermoelectric conversion material of the present invention exhibits excellent thermoelectric characteristics stably over a wide range from low temperature to relatively high temperature, and can be used not only for cooling elements but also for power generation using waste heat. Is a high-performance material that can also be used, and can achieve low cost, so that its industrial value is extremely large.

【図面の簡単な説明】[Brief description of the drawings]

【図1】銀ペーストを印刷したアルミナ基板にp 型およ
びn 型熱電変換材料を配置した概略を示す図である。
FIG. 1 is a view schematically showing a p-type and n-type thermoelectric conversion material arranged on an alumina substrate on which a silver paste is printed.

【図2】完成した熱電モジュールの概略を示す図であ
る。
FIG. 2 is a view schematically showing a completed thermoelectric module.

【符号の説明】[Explanation of symbols]

1・・・アルミナ基板 2・・・p型熱電変換材料 3・・・n型熱電変換材料 4・・・銀ペースト(表側) 5・・・銀ペースト(裏側) 6・・・リード線 DESCRIPTION OF SYMBOLS 1 ... Alumina substrate 2 ... P-type thermoelectric conversion material 3 ... N-type thermoelectric conversion material 4 ... Silver paste (front side) 5 ... Silver paste (back side) 6 ... Lead wire

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】Co,RhおよびIrから選ばれる少なく
とも1 種類の元素からなるMと、Fe,RuおよびOsか
ら選ばれる少なくとも1 種類の元素からなるM'と、N
i,PdおよびPtから選ばれる少なくとも1 種類の元素か
らなるM''と、P,AsおよびSbから選ばれる少なく
とも1種類の元素からなるAから構成される物質(M
(1-2x)M' x M''x )A3 (0<x ≦0.5 )に、B、
C、NおよびOから選ばれる少なくとも1種類の元素を
0.001 〜60at.%添加することを特徴とする熱電変換
材料。
1. M comprising at least one element selected from Co, Rh and Ir; M 'comprising at least one element selected from Fe, Ru and Os;
A substance (M) composed of M ″ composed of at least one element selected from i, Pd and Pt and A composed of at least one element selected from P, As and Sb
(1-2x) M ′ x M ″ x ) A 3 (0 <x ≦ 0.5), B,
At least one element selected from C, N and O
0.001 to 60 at. % Thermoelectric conversion material.
JP26360397A 1997-09-29 1997-09-29 Thermoelectric conversion material Expired - Fee Related JP3476343B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP26360397A JP3476343B2 (en) 1997-09-29 1997-09-29 Thermoelectric conversion material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP26360397A JP3476343B2 (en) 1997-09-29 1997-09-29 Thermoelectric conversion material

Publications (2)

Publication Number Publication Date
JPH11103098A true JPH11103098A (en) 1999-04-13
JP3476343B2 JP3476343B2 (en) 2003-12-10

Family

ID=17391845

Family Applications (1)

Application Number Title Priority Date Filing Date
JP26360397A Expired - Fee Related JP3476343B2 (en) 1997-09-29 1997-09-29 Thermoelectric conversion material

Country Status (1)

Country Link
JP (1) JP3476343B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1289026A2 (en) * 2001-08-31 2003-03-05 Basf Aktiengesellschaft Thermoelectric active materials and Generators and Peltier devices comprising them
CN100385695C (en) * 2003-04-22 2008-04-30 松下电器产业株式会社 Thermoelectric conversion material, thermoelectric conversion element using the material, and electric power generation method and cooling method using the element
JP2013195123A (en) * 2012-03-16 2013-09-30 Furuya Kinzoku:Kk Iridium-iridium rhodium thermo-couple
JP5749437B2 (en) * 2008-01-23 2015-07-15 古河機械金属株式会社 Thermoelectric conversion material and thermoelectric conversion module
JP2016066795A (en) * 2014-09-22 2016-04-28 国立研究開発法人物質・材料研究機構 Silicon- and tellurium-doped skutterudite thermoelectric conversion semiconductor, method for manufacturing the same, and thermoelectric power-generation element arranged by use thereof

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1289026A2 (en) * 2001-08-31 2003-03-05 Basf Aktiengesellschaft Thermoelectric active materials and Generators and Peltier devices comprising them
EP1289026A3 (en) * 2001-08-31 2004-04-21 Basf Aktiengesellschaft Thermoelectric active materials and Generators and Peltier devices comprising them
CN100385695C (en) * 2003-04-22 2008-04-30 松下电器产业株式会社 Thermoelectric conversion material, thermoelectric conversion element using the material, and electric power generation method and cooling method using the element
JP5749437B2 (en) * 2008-01-23 2015-07-15 古河機械金属株式会社 Thermoelectric conversion material and thermoelectric conversion module
US10508324B2 (en) 2008-01-23 2019-12-17 Furukawa Co., Ltd. Thermoelectric conversion material and thermoelectric conversion module
JP2013195123A (en) * 2012-03-16 2013-09-30 Furuya Kinzoku:Kk Iridium-iridium rhodium thermo-couple
JP2016066795A (en) * 2014-09-22 2016-04-28 国立研究開発法人物質・材料研究機構 Silicon- and tellurium-doped skutterudite thermoelectric conversion semiconductor, method for manufacturing the same, and thermoelectric power-generation element arranged by use thereof

Also Published As

Publication number Publication date
JP3476343B2 (en) 2003-12-10

Similar Documents

Publication Publication Date Title
US8716589B2 (en) Doped lead tellurides for thermoelectric applications
US6069312A (en) Thermoelectric materials with filled skutterudite structure for thermoelectric devices
US6169245B1 (en) Thermoelectric materials ternary penta telluride and selenide compounds
US7462217B2 (en) Method of preparation for the high performance thermoelectric material indium-cobalt-antimony
JP5636419B2 (en) Self-organized thermoelectric material
KR101663183B1 (en) Thermoelectric materials, and thermoelectric module and thermoelectric device comprising same
KR20110004362A (en) Doped tin tellurides for thermoelectric applications
CN101101954A (en) A cadmium-stibium-based p type thermal electrical material and its making method
JP2004119648A (en) p-TYPE THERMOELECTRIC CONVERSION MATERIAL AND THERMOELECTRIC CONVERSION ELEMENT USING IT
Zhu et al. Composition-dependent thermoelectric properties of PbTe doped with Bi2Te3
JP3476343B2 (en) Thermoelectric conversion material
JP2008147261A (en) P-type thermoelectric material, and its manufacturing method
Singsoog et al. Effecting the thermoelectric properties of p-MnSi1. 75 and n-Mg1. 98Ag0. 02Si module on power generation
TWI417248B (en) Thermoelectric material, method for fabricating the same, and thermoelectric module employing the same
JPWO2018123899A1 (en) Thermoelectric conversion material and thermoelectric conversion element
CN101118946B (en) Barium zinc antimony based p type thermoelectric material and method for making same
US20030153248A1 (en) Process for preparing p-type thermoelectric material
Dalafave Thermoelectric properties of Re6GaxSeyTe15− y (0≤ x≤ 2; 0≤ y≤ 7.5)
Tsubota et al. Thermoelectric Properties of Chevrel-Type Sulfides AMo6S8 (A= Fe, Ni, Ag, Zn, Sn, Pb, Cu)
JP3477019B2 (en) Thermoelectric conversion material and method for producing the same
JPH11186615A (en) Semiconductor thermo-electrical material
JP4070109B2 (en) Method for producing thermoelectric conversion material comprising Ln2S3 powder sintered body
JP4208983B2 (en) Manufacturing method of semiconductor thermoelectric material
JP2002274831A (en) Clathrate compound and high-efficiency thermoelectric material as well as method of manufacturing for the same and thermoelectric module using the high- efficiency thermoelectric material
JP3877060B2 (en) Lanthanum sulfide sintered body for thermoelectric conversion material and method for producing the same

Legal Events

Date Code Title Description
FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20070926

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20080926

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20080926

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20090926

Year of fee payment: 6

LAPS Cancellation because of no payment of annual fees