JPH1097990A - Aligner - Google Patents
AlignerInfo
- Publication number
- JPH1097990A JPH1097990A JP9273678A JP27367897A JPH1097990A JP H1097990 A JPH1097990 A JP H1097990A JP 9273678 A JP9273678 A JP 9273678A JP 27367897 A JP27367897 A JP 27367897A JP H1097990 A JPH1097990 A JP H1097990A
- Authority
- JP
- Japan
- Prior art keywords
- container
- inert gas
- exposure
- light source
- end wall
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
Landscapes
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Toxicology (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、雰囲気ガスを活性
化しやすい遠紫外線もしくはエキシマレーザ光を露光光
として利用して基板を露光する露光装置に関するもので
ある。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an exposure apparatus for exposing a substrate by using far ultraviolet rays or excimer laser light, which easily activates an atmosphere gas, as exposure light.
【０００２】[0002]
【従来の技術】半導体装置製造用の露光装置において、
遠紫外線やエキシマレーザ光を露光用の照明光とするも
のは知られている。一般に、強力な遠紫外線やエキシマ
レーザ光は雰囲気ガスを活性化しやすいので、これらの
露光装置では、光源レンズ系や投影レンズ系等の光学系
の周囲の雰囲気ガスの酸素や有機物等が露光光によって
活性化され、その化学反応によって該光学系の光学素子
の表面が汚染されることがある。そこで、このような露
光装置では、光学系を収納する容器の空気を窒素ガス等
の不活性ガスで置換することにより各光学素子の汚染を
防ぐことが、例えば特開平２−２１０８１３号公報で提
案されている。2. Description of the Related Art In an exposure apparatus for manufacturing a semiconductor device,
It is known to use far ultraviolet light or excimer laser light as illumination light for exposure. In general, strong deep ultraviolet rays or excimer laser light easily activates the atmosphere gas, and in these exposure apparatuses, oxygen and organic substances in the atmosphere gas around the optical system such as the light source lens system and the projection lens system are exposed to the exposure light. When activated, the chemical reaction may contaminate the surface of the optical element of the optical system. Therefore, in such an exposure apparatus, it is proposed in Japanese Patent Application Laid-Open No. H2-210813 to prevent contamination of each optical element by replacing the air in a container housing the optical system with an inert gas such as nitrogen gas. Have been.
【０００３】[0003]
【発明が解決しようとする課題】しかしながら、従来で
は、光学系を収容する容器への不活性ガスの供給につい
ての充分な配慮がなされておらず、露光光が通過しても
問題のない程度まで容器内の酸素や不純物を除去するた
めに不活性ガスを大量に消費していた。However, in the prior art, sufficient consideration has not been given to the supply of the inert gas to the container housing the optical system, and the supply of the inert gas to the extent that the exposure light does not cause any problem. A large amount of inert gas was consumed to remove oxygen and impurities in the container.
【０００４】本発明は、このような従来技術の未解決の
課題に鑑みなされたものであり、その目的は、少量の不
活性ガスによって光学素子の汚染を防止可能な露光装置
を提供することにある。SUMMARY OF THE INVENTION The present invention has been made in view of such an unsolved problem in the prior art, and an object of the present invention is to provide an exposure apparatus capable of preventing optical elements from being contaminated by a small amount of inert gas. is there.
【０００５】[0005]
【課題を解決するための手段】上記の目的を達成するた
めに、本発明は、遠紫外線もしくはエキシマレーザ光
（レーザ光Ｌ1 ，Ｌ2 ）を光源（光源１）からの露光光
として利用して基板（ウエハ４）を露光する露光装置に
おいて、前記光源から前記基板に至る露光光路中に配置
される光学素子（レンズ２ａ，２ｂ）の少なくとも一方
の面側を不活性ガス（窒素ガス）雰囲気とするための容
器（容器２ｄ）と、前記容器の前記光源側の端壁近傍か
ら前記容器内に不活性ガスを給気する不活性ガス給気ラ
イン（給気ライン８ａ）と、前記容器の前記基板側の端
壁近傍から前記容器内の不活性ガスを排気する不活性ガ
ス排気ライン（排気ライン８ｈ）を有することを特徴と
している。To achieve the above object of the Invention The present invention utilizes deep ultraviolet or excimer laser light (laser light L 1, L 2) as the exposure light from a light source (light source 1) In an exposure apparatus for exposing a substrate (wafer 4), at least one surface side of an optical element (lens 2a, 2b) disposed in an exposure optical path from the light source to the substrate has an inert gas (nitrogen gas) atmosphere. (Container 2d), an inert gas supply line (supply line 8a) for supplying an inert gas into the container from near the end wall on the light source side of the container, An inert gas exhaust line (exhaust line 8h) for exhausting the inert gas in the container from the vicinity of the end wall on the substrate side is provided.
【０００６】また、前記露光光路に沿って前記容器の前
記基板側の端壁と前記不活性ガス排気ラインの前記容器
からの排気口の間には、前記容器内にその両面が不活性
ガス雰囲気となるように収容されている光学素子（レン
ズ２ａ）が位置しないように、前記不活性ガス排気ライ
ンの前記容器からの排気口を前記容器に対して配置する
とよいし、前記露光光路に沿って前記容器の前記光源側
の端壁と前記不活性ガス給気ラインの前記容器への吸気
口の間にも、容器内にその両面が不活性ガス雰囲気とな
るように収容されている光学素子が位置しないように、
前記不活性ガス給気ラインの前記容器への吸気口を前記
容器に対して配置するとさらによい。Further, between the end wall of the container on the substrate side and the exhaust port of the inert gas exhaust line from the container along the exposure light path, both surfaces of the container are in an inert gas atmosphere. An exhaust port from the container of the inert gas exhaust line may be arranged with respect to the container so that the optical element (lens 2a) housed so as not to be positioned, and may be arranged along the exposure optical path. Also between the end wall on the light source side of the container and the inlet of the inert gas supply line to the container, an optical element housed in the container such that both surfaces thereof are in an inert gas atmosphere. Not to be located
It is further preferable that an inlet of the inert gas supply line to the container is arranged with respect to the container.
【０００７】また、前記前記不活性ガス給気ラインに
は、前記容器に吸気される不活性ガスの流量を制御する
ための可変弁（可変弁８ｃ）が設けられたり、前記露光
光路に沿って前記不活性ガス給気ラインの前記容器への
吸気口と前記不活性ガス排気ラインの前記容器からの排
気口の間には、前記容器内の酸素濃度を検出する酸素濃
度検出器（センサ８ｆ）が配置されたりしてもよい。The inert gas supply line is provided with a variable valve (variable valve 8c) for controlling the flow rate of the inert gas sucked into the container, or along the exposure optical path. An oxygen concentration detector (sensor 8f) for detecting the oxygen concentration in the container is provided between the inlet of the inert gas supply line to the container and the outlet of the inert gas exhaust line from the container. May be arranged.
【０００８】[0008]
【作用】本発明の露光装置では、不活性ガスは容器の光
源側端壁近傍から容器の基板側端壁近傍に向けて容器内
を流れることになる。このため、本発明の露光装置によ
れば、より効率的に光学素子の各面を不活性ガス雰囲気
に置くことができ、不活性ガスの消費量を低減すること
ができる。In the exposure apparatus of the present invention, the inert gas flows in the container from the vicinity of the light source side end wall of the container to the vicinity of the substrate side end wall of the container. Therefore, according to the exposure apparatus of the present invention, each surface of the optical element can be more efficiently placed in the inert gas atmosphere, and the consumption of the inert gas can be reduced.
【０００９】[0009]
【発明の実施の形態】本発明の実施例を図面に基づいて
説明する。Embodiments of the present invention will be described with reference to the drawings.
【００１０】図１は、第１実施例を説明する説明図であ
って、本実施例の露光装置Ｅ1 は一般にステッパと呼ば
れる縮小投影型の半導体露光装置である。この装置は、
エキシマレーザからなる光源１と、光源１から発せられ
た照明光（露光光）であるレーザ光Ｌ1 を所定の形状の
光束に成形する光学系である光源レンズ系２と、光源レ
ンズ系２によって所定の形状に成形されたレーザ光Ｌ1
で照明されたレチクル３上のパターンを基板であるウエ
ハ４に結像させる投影レンズ系５を有する。光源１はそ
のレーザ出力を制御するレーザ制御装置６を有し、レー
ザ制御装置６は制御手段であるコントローラ７によって
制御される。[0010] Figure 1 is an explanatory diagram for explaining a first embodiment, the exposure device E 1 of the present embodiment is generally reduction projection semiconductor exposure apparatus called a stepper. This device is
A light source 1 consisting of an excimer laser, a source lens system 2 is an optical system for the laser beam L 1 is illumination light emitted from the light source 1 (exposure light) is molded on the light beam having a predetermined shape, the source lens system 2 Laser light L 1 formed into a predetermined shape
And a projection lens system 5 for forming an image of the pattern on the reticle 3 illuminated by the above on a wafer 4 as a substrate. The light source 1 has a laser control device 6 for controlling the laser output, and the laser control device 6 is controlled by a controller 7 as control means.
【００１１】光源レンズ系２は、レーザ光Ｌ1 の露光光
路に沿って光源１側から順に並べられ、レーザ光Ｌ1 を
所定の光束に成形するためのレンズ２ａ，２ｂを有し、
これらは少なくとも一方のレンズ面が容器２ｄ内のガス
雰囲気側となるように容器２ｄに収容され、容器２ｄは
露光光路に沿って光源１に対向する側の端壁に窓２ｅ有
している。また、容器２ｄはレチクル３（ウエハ４）に
対向する側の端壁でレンズ２ｂを保持し、レンズ２ｂは
レチクル３に向ってレーザ光Ｌ1 を放出する第２の窓を
兼ねている。[0011] light source lens system 2 has ordered from the light source 1 side along the exposure optical path of the laser beam L 1, the lens 2a for shaping a laser beam L 1 in predetermined light beam, the 2b,
These are accommodated in the container 2d such that at least one lens surface is on the gas atmosphere side in the container 2d, and the container 2d has a window 2e on the end wall facing the light source 1 along the exposure optical path. The container 2d holds the lens 2b in the end wall of the side facing the reticle 3 (wafer 4), lens 2b also serves as a second window that emits laser light L 1 toward the reticle 3.
【００１２】容器２ｄの内部空間２ｆに不活性ガスであ
る窒素ガスを供給する窒素ガス供給装置８は、図示しな
い窒素ガス供給源から容器２ｄの内部空間２ｆに窒素ガ
スを供給する給気ライン８ａと、該給気ライン８ａに直
列に設けられた開閉弁である第１の電磁弁８ｂおよび可
変弁８ｃと、容器２ｄの内部空間２ｆから雰囲気ガスを
排出する排気ライン８ｈと、これに設けられた第２の電
磁弁８ｇと、容器２ｄの内部空問２ｆの酸素濃度を検出
するセンサ８ｆを有している。A nitrogen gas supply device 8 for supplying nitrogen gas, which is an inert gas, to the internal space 2f of the container 2d includes an air supply line 8a for supplying nitrogen gas from a nitrogen gas supply source (not shown) to the internal space 2f of the container 2d. A first solenoid valve 8b and a variable valve 8c, which are on-off valves provided in series with the air supply line 8a, and an exhaust line 8h for discharging atmospheric gas from the internal space 2f of the container 2d. A second electromagnetic valve 8g and a sensor 8f for detecting the oxygen concentration in the internal space 2f of the container 2d.
【００１３】給気ライン８ａはレーザ光Ｌ1 の露光光路
に沿って容器２ｄの光源側端壁とレンズ２ａの間から容
器２ｄ内に窒素ガスを供給し、排気ライン８ｈはレーザ
光Ｌ1 の露光光路に沿って容器２ｄのレチクル側端壁と
レンズ２ａの間から容器２ｄ内の窒素ガスを排気してい
る。このため、窒素ガスは容器２２ｄ内をレーザ光Ｌ2
の露光光路に沿って上流側（光源１側）から下流側（レ
チクル３側）に流れ、レンズ２ａの周囲を充分な窒素雰
囲気に維持する。[0013] air supply line 8a is a nitrogen gas is supplied from between the light source side end wall and the lens 2a of the container 2d into the container 2d along the exposure optical path of the laser beam L 1, the exhaust line. 8h of the laser beam L 1 The nitrogen gas in the container 2d is exhausted from between the reticle-side end wall of the container 2d and the lens 2a along the exposure light path. For this reason, the nitrogen gas passes through the inside of the container 22d with the laser beam L 2.
Flows from the upstream side (the light source 1 side) to the downstream side (the reticle 3 side) along the exposure light path, and the periphery of the lens 2a is maintained in a sufficient nitrogen atmosphere.
【００１４】図１から明らかなように、容器２ｄ内に完
全に収納されているレンズ（容器２ｄ内に完全に収納さ
れているレンズはレンズ２ａのみである）は、容器２ｄ
に対する給気ライン８ａの給気口より光源側にはなく、
容器２ｄに対する排気ライン８ｈの排気口よりレチクル
側にもない。また、センサ８ｆは露光光路に沿って給気
ライン８ａの容器２ｄへの吸気口と排気ライン８ｈの容
器２ｄからの排気口の間に配置されている。As is apparent from FIG. 1, the lens completely housed in the container 2d (the only lens completely housed in the container 2d) is the lens 2d.
Is not on the light source side than the air supply port of the air supply line 8a for
It is not on the reticle side of the exhaust port of the exhaust line 8h for the container 2d. The sensor 8f is disposed along the exposure optical path between the inlet of the supply line 8a to the container 2d and the outlet of the exhaust line 8h from the container 2d.
【００１５】第１の電磁弁８ｂおよび可変弁８ｃは、光
源１の駆動開始と同時に開かれて容器２ｄの内部空間２
ｆに所定の大流量値の窒素ガスを供給し、センサ８ｆに
よって検出される酸素濃度が所定の値に減少したとき、
可変弁８ｃが切換えられて窒素ガスの供給量を所定の小
流量値（定常値）に減少させる。なお、光源１の駆動開
始と同時に、第２の電磁弁８ｇを開き、排気ライン８ｈ
から容器２ｄの内部空間２ｆの空気を排出すれば、窒素
ガスによる置換をより一層迅速に行うことができる。The first solenoid valve 8b and the variable valve 8c are opened simultaneously with the start of driving of the light source 1 to open the internal space 2 of the container 2d.
When a predetermined large flow rate of nitrogen gas is supplied to f and the oxygen concentration detected by the sensor 8f decreases to a predetermined value,
The variable valve 8c is switched to reduce the supply amount of the nitrogen gas to a predetermined small flow value (steady value). At the same time as the driving of the light source 1 is started, the second solenoid valve 8g is opened, and the exhaust line 8h is opened.
If the air in the internal space 2f of the container 2d is exhausted from the container, the replacement with the nitrogen gas can be performed more quickly.
【００１６】なお、可変弁８ｃはレーザ制御装置６の出
力によって光源１が駆動されると同時にコントローラ７
の出力信号によって開かれ、コントローラ７に設定され
たプログラムである窒素供給プログラムによって所定時
間を経た後に閉じられるものでもよい。本実施例では、
容器２ｄの密封状態に応じて可変弁８ｃを数段階に切換
えることによって補充用の窒素ガスの流量を変化させる
ことができる。Note that the variable valve 8c is controlled by the controller 7 at the same time that the light source 1 is driven by the output of the laser controller 6.
, And may be closed after a predetermined time by a nitrogen supply program which is a program set in the controller 7. In this embodiment,
By switching the variable valve 8c in several stages according to the sealed state of the container 2d, the flow rate of the replenishing nitrogen gas can be changed.
【００１７】[0017]
【発明の効果】本発明によれば、紫外線もしくはエキシ
マレーザ光を光源からの露光光として利用して基板を露
光する露光装置において、容器内の雰囲気を少量の不活
性ガスによって維持することができ、光学素子の汚染を
防止するための不活性ガスを大量に消費することがな
い。According to the present invention, in an exposure apparatus for exposing a substrate using ultraviolet light or excimer laser light as exposure light from a light source, the atmosphere in the container can be maintained by a small amount of inert gas. In addition, a large amount of inert gas for preventing contamination of the optical element is not consumed.
【図１】第１実施例を説明する説明図である。FIG. 1 is an explanatory diagram illustrating a first embodiment.
Ｌ1 レーザ光 １ 光源 ２ 光源レンズ系 ２ｄ 容器 ３ レチクル ４ ウエハ ５ 投影レンズ系 ６ レーザ制御装置 ７ コントローラ ８ 窒素ガス供給装置 ８ａ 給気ライン ８ｂ 第１の電磁弁 ８ｇ 第２の電磁弁 ８ｄ バイパスライン ８ｃ 可変弁 ８ｆ センサ ８ｈ 排気ラインL 1 laser light 1 light source 2 light source lens system 2d container 3 reticle 4 wafer 5 projection lens system 6 laser controller 7 controller 8 nitrogen gas supply device 8a air supply line 8b first electromagnetic valve 8g second electromagnetic valve 8d bypass line 8c Variable valve 8f Sensor 8h Exhaust line
Claims (5)
源からの露光光として利用して基板を露光する露光装置
において、前記光源から前記基板に至る露光光路中に配
置される光学素子の少なくとも一方の面側を不活性ガス
雰囲気とするための容器と、前記容器の前記光源側の端
壁近傍から前記容器内に不活性ガスを給気する不活性ガ
ス給気ラインと、前記容器の前記基板側の端壁近傍から
前記容器内の不活性ガスを排気する不活性ガス排気ライ
ンを有することを特徴とする露光装置。1. An exposure apparatus for exposing a substrate using far ultraviolet light or excimer laser light as exposure light from a light source, wherein at least one surface of an optical element disposed in an exposure optical path from the light source to the substrate. A container for providing an inert gas atmosphere on the side, an inert gas supply line for supplying an inert gas into the container from near the end wall on the light source side of the container, and a substrate side of the container. An exposure apparatus comprising: an inert gas exhaust line that exhausts an inert gas in the container from near an end wall.
板側の端壁と前記不活性ガス排気ラインの前記容器から
の排気口の間には、前記容器内にその両面が不活性ガス
雰囲気となるように収容されている光学素子が位置しな
いように、前記不活性ガス排気ラインの前記容器からの
排気口を前記容器に対して配置したことを特徴とする請
求項１記載の露光装置。2. Between the end wall of the container on the substrate side and an exhaust port of the inert gas exhaust line from the container along the exposure light path, both surfaces of the container are in an inert gas atmosphere. 2. The exposure apparatus according to claim 1, wherein an exhaust port from the container of the inert gas exhaust line is arranged with respect to the container such that the optical element accommodated in the container is not positioned.
源側の端壁と前記不活性ガス給気ラインの前記容器への
吸気口の間には、前記容器内にその両面が不活性ガス雰
囲気となるように収容されている光学素子が位置しない
ように、前記不活性ガス給気ラインの前記容器への吸気
口を前記容器に対して配置したことを特徴とする請求項
２記載の露光装置。3. Between the end wall on the light source side of the container and the inlet of the inert gas supply line to the container along the exposure optical path, both surfaces of the container are inert gas. 3. The exposure according to claim 2, wherein an intake port of the inert gas supply line to the container is arranged with respect to the container such that the optical element housed in the atmosphere is not positioned. apparatus.
記容器に吸気される不活性ガスの流量を制御するための
可変弁が設けられていることを特徴とする請求項１記載
の露光装置。4. The exposure according to claim 1, wherein a variable valve for controlling a flow rate of the inert gas sucked into the container is provided in the inert gas supply line. apparatus.
気ラインの前記容器への吸気口と前記不活性ガス排気ラ
インの前記容器からの排気口の間には、前記容器内の酸
素濃度を検出する酸素濃度検出器が配置されていること
を特徴とする請求項１記載の露光装置。5. An oxygen concentration in the container along an exposure optical path between an inlet of the inert gas supply line to the container and an outlet of the inert gas exhaust line from the container. 2. An exposure apparatus according to claim 1, further comprising an oxygen concentration detector for detecting the temperature.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9273678A JPH1097990A (en) | 1997-09-19 | 1997-09-19 | Aligner |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9273678A JPH1097990A (en) | 1997-09-19 | 1997-09-19 | Aligner |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP05023564A Division JP3084332B2 (en) | 1993-01-19 | 1993-01-19 | Exposure equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH1097990A true JPH1097990A (en) | 1998-04-14 |
Family
ID=17531036
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9273678A Pending JPH1097990A (en) | 1997-09-19 | 1997-09-19 | Aligner |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH1097990A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000031780A1 (en) * | 1998-11-19 | 2000-06-02 | Nikon Corporation | Optical device, exposure system, and laser beam source, and gas feed method, exposure method, and device manufacturing method |
| WO2001006548A1 (en) * | 1999-07-16 | 2001-01-25 | Nikon Corporation | Exposure method and system |
| KR100572250B1 (en) * | 2002-08-30 | 2006-04-19 | 에이에스엠엘 네델란즈 비.브이. | Lithographic apparatus, device manufacturing method and device manufactured thereby |
-
1997
- 1997-09-19 JP JP9273678A patent/JPH1097990A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000031780A1 (en) * | 1998-11-19 | 2000-06-02 | Nikon Corporation | Optical device, exposure system, and laser beam source, and gas feed method, exposure method, and device manufacturing method |
| WO2001006548A1 (en) * | 1999-07-16 | 2001-01-25 | Nikon Corporation | Exposure method and system |
| US6970228B1 (en) | 1999-07-16 | 2005-11-29 | Nikon Corporation | Exposure method and system |
| KR100572250B1 (en) * | 2002-08-30 | 2006-04-19 | 에이에스엠엘 네델란즈 비.브이. | Lithographic apparatus, device manufacturing method and device manufactured thereby |
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