JPH1081965A - Plasma controlling method and device therefor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To always stabilize plasma by controlling the reaction between sputtering atoms and a reactive gas in a short time. SOLUTION: The potential difference is given to the space between a target 3 and a wafer 10 arranged so as to oppose each other at positions far by prescribed intervals in a vessel 2 fed with an inert gas to generate plasma, furthermore, in the case the reacting state between sputtering atoms dispersed into the plasma in the vessel 2 fed with the prescribed reactive gas and the reactive gas is controlled, the luminous intensities with prescribed wavelengths of light to be generated by the luminescence of the sputtering atoms are detected by at least two or more kinds, the average value of the luminous intensities is calculated, and based on the calculated result, the quantity of the reactive gas to be fed is controlled. In this way, even in the case either luminous intensity remarkably fluctuates by external disturbances, the width of the fluctuation is small since the average value is satisfied, therefore the increse and decrease of the quantity of the reactive gas to be fed is also small, so that the reacting state is controlled in a short time to stabilize the plasma.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[Table of Contents] The present invention will be described in the following order. BACKGROUND OF THE INVENTION Problems to be Solved by the Invention (FIGS. 4 to 6) Means for Solving the Problems Embodiments of the Invention (FIGS. 1 to 3) Effects of the Invention

[0002]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma control method and apparatus, and more particularly, to a plasma control method and apparatus for controlling a reaction state between sputtering atoms in plasma generated in a sputter apparatus and a reaction gas. It is suitable.

[0003]

2. Description of the Related Art Conventionally, in spatter devices, usually 10 ^-7
A target made of a disk-shaped metal lump (in this case, a silicon lump) and a wafer to be processed are placed parallel to each other at a predetermined distance in a vacuum chamber evacuated to a high vacuum on a [Torr] stage. And an inert gas of Ar is supplied into the vacuum chamber, and a potential difference of about 1000 [V] is applied between the target and the wafer using the target as a cathode and the wafer as an anode.

Accordingly, the sputter device generates plasma between the target and the wafer, and collides the ionized Ar atoms in the vacuum chamber with the target to cause Si atoms to fly out of the target surface, and then to react with O ₂ or the like. By supplying gas, an SiO ₂ film is formed on the wafer surface.

[0005]

By the way, in the sputter device having such a structure, when a reaction gas of O ₂ is supplied to the plasma as shown in FIG. 4, the reaction speed between the sputtering atoms Si and O ₂ is reduced. There is a nonlinear relationship with the supply amount of the O ₂ gas. That is, in the spatter device, the reaction speed between Si and O ₂ becomes slow if the supply amount of O ₂ gas is increased. In practice, in the sputter device, the supply amount is set to a value such that a chemical reaction between Si and O ₂ occurs at a speed “V” indicated by, for example, “A”, which is the fastest reaction speed at which a SiO ₂ film having a desired thickness can be formed. The O ₂ gas of “F” is supplied to form a SiO ₂ film having a desired thickness.

Here, the emission intensity of Si atoms when only Ar gas is supplied to generate plasma and the emission intensity of Si atoms present in plasma when O ₂ gas is supplied to the plasma are described. The difference will be described with reference to FIGS. As shown in FIG. 5, the emission intensity of Si atoms when the plasma is generated only by the inert gas Ar is present it has a peak P ₁ and P ₂ for each wavelength.

[0007] However, the emission intensity of the Si atoms when supplying O ₂ gas plasma generated by an inert gas of Ar as shown in FIG. 6, SiO ₂ Si O ₂ and is chemically react Si present in the plasma
Since the number of atoms is reduced, peaks P ₃ and P ₄ (P ₁ → P ₃ , P ₂ → P
₄ ) Have to exist.

In practice, in a sputter device, when O ₂ gas having a supply amount “F” indicated by “A” is supplied to plasma, Si
Because O ₂ and is considered to be a SiO ₂ film of the chemical reaction to the desired thickness using a reaction rate "V" and either one of the values below GaTsuta peak P ₃ or P ₄ of the light emitting intensity S
The supply amount of the O ₂ gas is controlled as one target value in the emission intensity of the i atom.

However, in the sputter device, since the value of the peak P ₃ (or peak P ₄ ) of the emission intensity of Si atoms existing in the plasma is set as one target value, the supply amount of the O ₂ gas is controlled. The peak of the emission intensity of Si atoms present in the actual plasma fluctuates greatly due to noise, impurities, and the like, and glow discharge temporarily turns into an arc discharge that shines strongly due to dust and the like in the vacuum chamber ( When the peak of the emission intensity of the Si atoms present in the actual plasma fluctuates significantly due to arcing, the peak value greatly deviates from the target value.

As described above, in the sputter device, when the peak value of the emission intensity of the Si atoms present in the actual plasma greatly deviates from the target value, the supply amount of the O ₂ gas also changes greatly. _Even the reaction state with ₂ greatly changes. In this case, the sputter device uses Si
In order to make the emission intensity of the atoms close to the target value, the amount of supply of the O ₂ gas must be increased or decreased, and there is a problem that it takes much time to stabilize the reaction state.

The present invention has been made in view of the above points, and it is an object of the present invention to propose a plasma control method and apparatus capable of controlling the reaction state between sputtering atoms and a reactant gas in a short time to constantly stabilize the plasma. Is what you do.

[0012]

SUMMARY OF THE INVENTION In order to solve the above-mentioned problems, the present invention provides a method of manufacturing a semiconductor device, comprising the steps of: When the reaction state between the sputtering gas and the reaction gas dispersed in the plasma in the container in which the predetermined reaction gas is supplied in the container while controlling the plasma by applying the At least two types of emission intensities at predetermined wavelengths of light generated by the above are detected, an average value of the emission intensities at predetermined wavelengths detected by two or more types is calculated, and the supply amount of the reaction gas is controlled based on the calculation result. Therefore, even when one of the light emission intensities fluctuates greatly due to disturbance, the average value is taken, so that the range of fluctuation is small, and Since only a small also increase or decrease the supply amount of the reaction gas plasma by controlling the reaction state between short time Supatsutaringu atoms and the reaction gas can be stabilized.

A plasma is generated by applying a potential difference between a target and a wafer, which are arranged opposite to each other at a predetermined distance in a vessel to which an inert gas is supplied, and generates a predetermined reaction gas in the vessel. When controlling the reaction state between the sputtering gas and the reactive gas dispersed in the plasma in the container to which the gas is supplied, at least two types of emission intensities of a predetermined wavelength of light generated by the emission of the sputtering atom are taken in. Calculating the electron temperature of the plasma based on the ratio of the emission intensities of the predetermined wavelengths taken in by two or more types, and controlling the voltage value for giving a potential difference based on the calculation result, always keeps the electron temperature of the plasma. Can be stabilized.

[0014]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below in detail with reference to the drawings.

In FIG. 1, reference numeral 1 denotes a sputter device as a plasma control device as a whole. A target 3 as a cathode is provided in a vacuum chamber 2 and a substrate holder 4 as an anode is provided at a position facing the target 3. . Further, the sputter device 1 is provided with a gas supply pipe 5 for supplying an inert gas of Ar and a reactive gas of O _{2 in} a space between the target 3 and the substrate holder 4. Further, the sputter device 1 is configured such that a mechanical pump 6 and a turbo molecular pump 7 are provided outside the vacuum chamber 2 so that the inside of the vacuum chamber 2 can be evacuated and set to a predetermined sputter pressure.

Here, the target 3 is electrically connected to a cathode power supply 8 and is applied at a predetermined voltage during operation. Further, the substrate holder 4 is attached via a bearing 9 provided on a housing portion of the vacuum chamber 2 so as to be slidable in a direction indicated by an arrow X,
The vacuum chamber 2 itself is grounded. further,
On the surface of the substrate holder 4, a wafer 10 as a processing target is attached at a predetermined position facing the target 3. Accordingly, in the sputter device 1, the target 3 operates as a cathode at the time of sputter, and the housing of the substrate holder 4 and the vacuum chamber 2 operate as an anode to generate plasma between the target 3 and the wafer 10. I have.

In the sputter device 1, a concave mirror 11 is provided at a predetermined position in the vacuum chamber 2, and an arm 12 is attached to a housing portion of the vacuum chamber 2, and a CCD camera 13 is fixed on the arm 12. Is held. As a result, the sputter device 1 emits the light generated by the target atoms (Si atoms) dispersed in the plasma generated between the target 3 and the wafer 10 to the concave mirror 11.
And is captured by the CCD camera 13 as an image.

In this case, the substrate holder 4 is disposed so as to block between the target 3 and the CCD camera 13.
Thus, the lens surface of the CCD camera 13 is prevented from being sputtered. The CCD camera 13 is driven by a CCD driver circuit 14, and the microcomputer 15 controls the timing of capturing plasma emission.

In this CCD camera 13, two types of wavelength selective transmission films (λ ₁ and λ ₂ ) are attached on each pixel so as to divide the light receiving surface into two parts from the center to the left and right as shown in FIG. Light generated by the emission of Si atoms dispersed therein is taken in by the left and right light receiving surfaces 13A and 13B for each wavelength. Here, not all the pixels on the light receiving surfaces 13A and 13B of the CCD camera 13 take in the light due to the light emission of the Si atoms, and there should be pixels that have taken in the light and pixels that have not. is there.
Accordance connexion, microcomputer 15 is the light receiving surface 13A and the average value of each pixel of the captured emission intensity across the spectral line intensities P _3, the spectral line intensity average value for each pixel of the captured emission intensity across the light-receiving surface 13B P _It is calculated as ₄ .

FIG. 3 shows a sectional structure of a pixel portion of the image pickup device in the CCD camera 13. CCD camera 1
Reference numeral 3 denotes a general structure in which a polysilicon electrode or an Al electrode is provided on a semiconductor substrate via an SiO ₂ insulating film, and a light transmitting film 2 is provided via a protective film 24 on the Al electrode.
5. On-chip lens 26, the on-chip lens 26
Light emitted by the plasma transmitted through the wavelength selective transmission films 27 and 28 having two layers thereon is received by a light receiving element 29 formed on a semiconductor substrate.

By the way, the micro computer 15
Calculate the spectral line intensity P ₅ (FIG. 6) which is the average value of the peaks P ₃ and P ₄ of the spectral line intensity at which a SiO ₂ film having a desired reaction speed and a desired thickness can be formed. In addition, the electron temperature calculated based on the ratio between the two spectral line intensities P ₃ and P ₄ is stored in advance as a target temperature. Thus, the spatter device 1 has the spectral line intensity P
The supply amount of the O ₂ gas can be controlled with ₅ as the target intensity, and the applied voltage can be controlled with the electron temperature calculated based on the ratio of the spectral line intensities P ₃ and P ₄ as the target temperature.

Next, a method of calculating the electron temperature of the plasma will be described below. The spectral line intensity of the plasma emission is the quantum transition probability A _nm that produces radiation at a given frequency,
It is determined by the product of the number of atoms N _n in the corresponding excited state and hν _n . Where ν _n is the frequency of the light. If the plasma is in thermal equilibrium, the number N _n of n-th energy level excited by the atoms follows the laws of statistical mechanics N
_n is

(Equation 1) Becomes

Here, N ₀ is an atomic density [cm ⁻³ ], and ε
_{Let n} be the nth level of excitation energy and g _n be ε _n
Let Z (T) be the sum of the states of the atom in question at the electron temperature T,
(T) is given by

(Equation 2) Can be expressed as Here, A _nm is the transition probability at the time of falling from the n-th level to the m-th level, ν _n is the frequency of the spectral line, and h is the Planck constant 6.62619 × 10 ⁻²⁷ [er
If g · s] and the intensity I _n of spectral lines, the following equation

(Equation 3) Can be expressed as

In the equation (3), A _nm , g _n , Z
(T) is T is determined from the I _n Knowing. Then, taking the logarithm of equation (3), k = 1.8062 × 10 ^-14 [erg / °
K] and ε _n is expressed in units of [eV], so that 1 [eV] =
Using 1.60218 × 10 ^-12 [erg], the following equation

(Equation 4) Get. Here, λ _n = c / ν _n and v _n = c / λ _n . The second term on the right side of the equation (4) is a constant term when T and _Nn are constant. Thus between the T and I _n be that there is a one-to-one relationship, T is obtained by knowing I _n. Here, c is the speed of light, and c = 2.997725 × 10 ⁻³ [m / s].

[0025] Alternatively, knowing the intensity I _n1, I _n2 of the two spectral lines, the following equation from equation (4)

(Equation 5) Is obtained. Here, ε _n1 , ε _n2 ; A _n1m1 g _n1 ; A _n2m2
g _n2 ; ν _n1 ν _n2 is a value specific to a pair of spectral lines of the atom of interest. Accordance connexion are adapted to be prompted to electron temperature T by measuring the intensity of the pair of spectral lines I _n1 (P ₃₎ and I _n2 (P _4).

In practice, the spatter device 1 emits light generated by the emission of Si atoms in the plasma actually generated by CC.
2 for each wavelength on the light receiving surfaces 13A and 13B of the D camera 13.
The spectral line intensities P ₃ and P ₄ are calculated by fetching the types and averaging them for each pixel. Then, the spatter device 1 calculates the average value of the spectral line intensities P ₃ and P ₄ of the Si atoms by the micro computer 15 and determines whether the calculated result is higher or lower than the target intensity.
When the average value of the spectral line intensity is higher than the target intensity, the voltage control unit 17 controls the gas supply valve 1.
8, the supply amount of the O ₂ gas is increased, and when the average value of the spectral line intensity is lower than the target intensity, the voltage control unit 17 is opened.
Thus, the gas supply valve 18 is closed to reduce the supply amount of the O ₂ gas.

The spatter device 1 is a CCD camera 13
At least two types of S captured by the light receiving surfaces 13A and 13B
The comparing unit 19 compares whether the electron temperature calculated based on the ratio of the spectral line intensities P ₃ and P ₄ of the i atom is higher or lower than the target temperature, and when the electron temperature is higher than the target temperature, the voltage is higher. The applied voltage is reduced by the control unit 20, and when the electron temperature is lower than the target temperature, the applied voltage is increased by the voltage control unit 20.

In the above configuration, the spatter device 1
By forming two types of wavelength selective transmission films (λ ₁ , λ ₂ ) on the light receiving surfaces 13A and 13B of the CD camera 13, the spattering atoms (dispersed in the plasma generated in the chamber 2) are formed. It is possible to take in two types of light for each wavelength within the range of a predetermined region by light emission of (Si atom).

The spatter device 1 is a CCD camera 13
By you take the average value in pixel units captures light receiving surface 13A and 13B, it is possible to suppress the variation of the spectral line intensities P ₃ and P ₄ due to the variation in each pixel.

As described above, the spatter device 1 uses the spectral line intensity P ₃ which is the average of the spectral line intensities P ₃ and P _4.
By setting ₅ as the target intensity, the spectral line is more affected by disturbances such as impurities compared to the conventional case where either the value of the spectral line intensity P ₃ or P ₄ is set as the target intensity. Even when the intensities P ₃ and P ₄ fluctuate, the deviation from the original target intensity is not greatly reduced. As a result, the increase or decrease in the supply amount of the O ₂ gas is reduced and the reaction state of the plasma is stabilized in a short time. be able to.

Further, the spatter device 1 is a CCD camera 1
The light receiving surfaces 13A and 13B of No. 3 take in the light and take an average value for each pixel, so that the fluctuation of the spectral line intensities P ₃ and P ₄ due to the variation for each pixel can be suppressed, and thus the spectral line intensity P it is possible to suppress variation in target temperature calculated based on the ₃ and the intensity ratio of P _4.

According to the above configuration, the spatter device 1 emits light due to the emission of plasma (Si atoms) to the CCD camera 13.
The spectral line intensities P ₃ and P ₄ calculated by fetching each wavelength through two types of wavelength selective transmission films (λ ₁ , λ ₂ ) attached to the light receiving surfaces 13A and 13B, and averaging each pixel. Is calculated, the average value is obtained even if one of the spectral line intensities P ₃ or P ₄ fluctuates due to arcing or the like, so that it does not greatly fluctuate from the target value. It is possible to stabilize the reaction state of the plasma in a short time by reducing the increase and decrease of the supply amount of the O ₂ gas by the voltage control unit 17.

The sputter device 1 emits light of plasma (Si atoms) to the light receiving surfaces 13A and 13A of the CCD camera 13.
B, two types of wavelength selective transmission films (λ ₁ , λ
₂ ) The electron temperature of the plasma is calculated by calculating the electron temperature of the plasma based on the two types of spectral line intensity ratios and controlling the applied voltage based on the result of comparison with the target value. Can be stabilized.

[0034] In the aforementioned embodiment, it has dealt with the case where the spectral line intensities P ₅ is the average of the two spectral lines intensity P ₃ and P ₄ as stored in advance as a target value, the present invention However, the present invention is not limited thereto, and an average value of three or more spectral line intensities may be calculated and set as the target temperature. In this case, even if the spectral line intensity fluctuates at a certain wavelength due to arcing or the like, the average temperature of three or more spectral line intensities is used as the target temperature.

In the above-described embodiment, two types of wavelength selective transmission films (λ ₁ and λ ₂ ) are attached on each pixel so that the light receiving surface of the CCD camera 13 is divided into two parts from the center to the left and right. Although the description has been given of the case where the light by the light emission of the Si atoms present therein is taken in by the left and right light receiving surfaces 13A and 13B for each wavelength, the present invention is not limited to this, and the light receiving surface of one CCD camera A selective transmission film (λ ₁ ) is attached, and a wavelength selective transmission film (λ ₂ ) is attached to the light receiving surface of another CCD camera so that light by the emission of Si atoms present in the plasma is taken in for each wavelength. Is also good. In this case, the same effect as in the above-described embodiment can be obtained.

Further, in the above-described embodiment, the case where the present invention is applied to the spatter device 1 has been described. However, the present invention is not limited to this, and the point is that the present invention is applied to a case where the reaction gas is supplied into the vacuum chamber 2. If a film can be formed on the surface of the wafer 10 by applying a predetermined potential difference between the disposed target 3 and the wafer 10 disposed to face the target 3 to generate plasma, a magnetron-type sputter device The present invention may be applied to other various types of plasma generating devices.

[0037]

As described above, according to the present invention, a plasma is generated by applying a potential difference between a target and a wafer which are arranged opposite to each other at a predetermined distance in a container to which an inert gas is supplied. When controlling the reaction state between the sputtering atoms and the reaction gas dispersed in the plasma in the container in which the predetermined reaction gas is supplied into the container while controlling the reaction gas, the light generated by the emission of the sputtering atoms By detecting at least two types of emission intensities of the predetermined wavelength, calculating an average value of the emission intensities of the predetermined wavelengths detected by the two or more types, and controlling the supply amount of the reaction gas based on the calculation result, one of the two is obtained. Even when the luminescence intensity fluctuates greatly due to disturbance, the average value is taken, so that the range of fluctuation is small, and thus the fluctuation of the supply amount of the reaction gas is small. Ku plasma short time by controlling the reaction state between Supatsutaringu atoms and the reaction gas so requires only a can be stabilized.

A plasma is generated by applying a potential difference between a target and a wafer, which are disposed opposite to each other at a predetermined distance in a container to which the inert gas is supplied, and generates a predetermined reaction gas in the container. When controlling the reaction state between the sputtering gas and the reactive gas dispersed in the plasma in the container to which the gas is supplied, at least two types of emission intensities of a predetermined wavelength of light generated by the emission of the sputtering atom are taken in. Calculating the electron temperature of the plasma based on the ratio of the emission intensities of the predetermined wavelengths taken in by two or more types, and controlling the voltage value for giving a potential difference based on the calculation result, always keeps the electron temperature of the plasma. Can be stabilized.

[Brief description of the drawings]

FIG. 1 is a schematic perspective view showing an embodiment of a spatter device using a plasma control device according to the present invention.

FIG. 2 is a schematic diagram illustrating a light receiving surface of a CCD according to the present invention.

FIG. 3 is a schematic cross-sectional view showing a structure of a pixel portion in the CCD camera according to the present invention.

FIG. 4 is a graph showing the relationship between O ₂ gas and reaction speed.

FIG. 5 is a graph (1) showing the emission intensity of Si when only Ar gas is supplied.

FIG. 6 is a graph (2) showing the emission intensity of Si when Ar gas and O ₂ gas are supplied.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Sputter device, 2 ... Vacuum chamber, 3 ... Target, 4 ... Substrate holder, 5 ... Supply pipe, 6 ... Mechanical pump, 7 ... Turbo molecular pump, 8 ... Cathode power supply, 9 ... ... bearing, 10 ... wafer, 11 ... concave mirror, 12 ... arm, 13 ... CCD camera, 14 ...
CCD driver circuit, 15: Microcomputer,
16, 19 ... comparator, 17, 20 ... voltage controller, 2
4 ... Protective film, 25 ... Light transmitting film, 26 ... On-chip lens, 27, 28 ... Wavelength selective transmitting film, 29 ... Light receiving element.

Claims (8)

[Claims] A plasma is generated by applying a potential difference between a target and a wafer which are arranged opposite to each other at a predetermined distance in a container to which an inert gas is supplied, and generates a plasma in the container. A plasma control method for controlling a reaction state between sputtering atoms dispersed in the plasma in the vessel to which the reaction gas is supplied and the reaction gas, wherein a predetermined wavelength of light generated by emission of the sputtering atoms is provided. A first step of detecting at least two types of light emission intensities of the above, and calculating an average value of the two or more types of detected light emission intensities of the predetermined wavelength, and controlling the supply amount of the reaction gas based on the calculation result. 2. A plasma control method comprising the following two steps. 2. In the first step, the emission intensity of the predetermined wavelength is taken into a solid-state imaging device via a wavelength selective transmission film corresponding to each of the predetermined wavelengths, and the emission intensity is stored in a pixel unit of the solid-state imaging device. The plasma control method according to claim 1, wherein averaging is performed. 3. A plasma is generated by applying a potential difference between a target and a wafer arranged opposite to each other at a predetermined distance in a container to which an inert gas is supplied, and a plasma is generated in the container. A plasma control method for controlling a reaction state between sputtering atoms dispersed in the plasma in the vessel to which the reaction gas is supplied and the reaction gas, wherein a predetermined wavelength of light generated by emission of the sputtering atoms is provided. A first step of detecting at least two or more types of light emission intensities, and calculating the electron temperature of the plasma based on the ratio of the two or more types of detected light emission intensities of the predetermined wavelength, and calculating the potential difference based on the calculation result. A second step of controlling a voltage value to be applied. 4. In the first step, the luminescence intensity of the predetermined wavelength is taken into a solid-state imaging device via a wavelength selective transmission film corresponding to the predetermined wavelength, and the luminescence intensity is stored in a pixel unit of the solid-state imaging device. The plasma control method according to claim 3, wherein the averaging is performed. 5. A plasma is generated by applying a potential difference between a target and a wafer disposed opposite to each other at a predetermined distance in a container to which an inert gas is supplied, and generating a plasma in the container. A plasma control device for controlling a reaction state between the sputtering gas and the sputtering gas dispersed in the plasma in the container to which the reaction gas has been supplied, wherein a predetermined wavelength of light generated by light emission of the sputtering gas is provided. A solid-state imaging device that captures at least two or more types of emission intensities, a control unit that calculates an average value of the emission intensities of the predetermined wavelength detected by two or more types, and controls the supply amount of the reaction gas based on the calculation result. A plasma control device comprising: 6. The solid-state imaging device according to claim 1, wherein the control unit captures the emission intensity of the predetermined wavelength into a solid-state imaging device via a wavelength-selective transmission film corresponding to the predetermined wavelength, and averages the emission intensity for each pixel of the solid-state imaging device. The plasma control device according to claim 5, wherein the plasma control device is used. 7. A plasma is generated by applying a potential difference between a target and a wafer disposed opposite to each other at a predetermined distance in a container to which an inert gas is supplied, and generating a plasma in the container. A plasma control device for controlling a reaction state between the sputtering gas and the sputtering gas dispersed in the plasma in the container to which the reaction gas has been supplied, wherein a predetermined wavelength of light generated by light emission of the sputtering gas is provided. A solid-state imaging device that captures at least two types of emission intensities of the above, and calculating the electron temperature of the plasma based on the ratio of the emission intensities of the predetermined wavelength detected by two or more types, and giving the potential difference based on the calculation result. Control means for controlling a voltage value of the plasma. 8. The solid-state imaging device according to claim 1, wherein the control unit captures the emission intensity of the predetermined wavelength into a solid-state imaging device via a wavelength-selective transmission film corresponding to each of the predetermined wavelengths, and averages the emission intensity in pixel units of the solid-state imaging device The plasma control apparatus according to claim 7, wherein the plasma control apparatus is used.