JPH1073982A - Electrifying device and electrophotographic device using it - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an electrifying device and an electrophotographic device which charge efficiently and uniformly the surface of a photoreceptor to higher voltage even if the photoreceptor passes through the electrifying device for shorter time due to decreasing size and high-speed processing of the electrophotographic device, by improving electrophotographic material property and mechanical durability totally. SOLUTION: The electrifying device 102 charges a photoreceptor 101 for an image forming device, consists of a charging wire 104 arranged in almost parallel to the photoreceptor 101, two conductive shields 121 which have an opening at the position facing the photoreceptor, encloses the charging wire 104, and is almost parallel to it, and material surrounding them. The opening is shielding that is slit-type opening between two shield plates. In this case, charging current flowing from the charging wire to the photoreceptor varies in the direction of the bus of the photoreceptor 101.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a corona discharge type charger and an electrophotographic apparatus using the same. More specifically, the present invention relates to an electrophotographic apparatus using an amorphous silicon-based photoconductor (hereinafter abbreviated as a-Si photoconductor), and more particularly, to an a-Si photoconductor.
The present invention relates to an electrophotographic image forming method and apparatus capable of reducing image density unevenness caused by potential unevenness latent in a Si photoreceptor and providing a high quality copy image.

[0002]

2. Description of the Related Art Conventionally, an a-Si photoreceptor has a high surface hardness, exhibits high sensitivity to long wavelength light such as a semiconductor laser (770 nm to 800 nm), and shows little deterioration due to repeated use. High-speed copier and L
It has been awarded as an electrophotographic photosensitive member such as a BP (laser beam printer).

FIG. 4 is a schematic diagram showing an image forming process of a copying machine using an a-Si photosensitive member. A main charger 402 and an electrostatic latent image are provided around a photosensitive member 401 rotating in the direction of arrow R1. Image forming portion 403, developing device 405, transfer paper supply system 4
06, transfer charger 407 (a), separation charger 407
(B), cleaner 409, transport system 410, light source 41
1 and so on are provided. As the main band electricity 402,
Corona chargers having excellent uniform charging properties are widely used. Hereinafter, the image forming process will be described with reference to an example. The photoconductor 401 is uniformly charged by the main charger 402 to which a high voltage of +6 to 8 kV is applied, and is guided from the electrostatic latent image forming portion to be projected. An electrostatic latent image is formed, and a negative polarity toner is supplied from the developing device 405 to the latent image to form a toner image. On the other hand, the transfer material P supplied in the direction of the photoconductor through the transfer paper supply system 406 receives toner from the back in the gap between the transfer charger 407 (a) to which a high voltage of +7 to 8 kV is applied and the photoconductor 401. A positive electric field of opposite polarity is applied, whereby the negative polarity toner image on the surface of the photoconductor is transferred to the transfer material P. 12-14kVp-p, 300-60
Separation charger 407 to which high-voltage AC voltage of 0 Hz is applied
By (b), the transfer material P reaches the fixing device (not shown) through the transfer paper transport system 410, and the toner image is fixed and discharged out of the device.

In electrophotography, a photoconductive material for forming a photosensitive layer in a photoreceptor has a high sensitivity, a high SN ratio [photocurrent (Ip) / dark current (Id)], and a high spectral characteristic of an electromagnetic wave to be irradiated. Having a suitable absorption spectrum, fast light response, and having a desired dark resistance value,
Characteristics such as being harmless to the human body during use are required. In particular, in the case of a photoconductor for an image forming apparatus that is incorporated in an image forming apparatus used in an office as an office machine, the above-described non-pollution during use is important. Hydrogenated amorphous silicon (hereinafter abbreviated as "a-Si: H") is a photoconductive material exhibiting such excellent properties. For example, Japanese Patent Publication No. 60-35059 discloses an image forming apparatus. The application as a photoreceptor is described.

[0005] A photoreceptor for an image forming apparatus using a-Si: H is generally prepared by heating a conductive support to 50 ° C. to 400 ° C. and depositing the conductive support on the support by a vacuum deposition method, a sputtering method, or the like.
A photoconductive layer made of a-Si is formed by a film forming method such as an ion plating method, a thermal CVD method, a photo CVD method, and a plasma CVD method. Among them, the plasma CVD method, that is,
A method in which a source gas is decomposed by direct current, high frequency, or microwave glow discharge to form an a-Si deposited film on a support has been put to practical use as a suitable method.

In Japanese Patent Application Laid-Open No. 54-83746, a conductive support and a-Si containing a halogen atom as a constituent element (hereinafter referred to as “a-Si: X”) are disclosed.
2. Description of the Related Art A photoconductor for an image forming apparatus including a photoconductive layer has been proposed. In this publication, one halogen atom is added to a-Si.
By containing from 40 to 40 atomic%, heat resistance is high,
Good electrical as photoconductive layer of photoreceptor for image forming device,
It is said that optical characteristics can be obtained.

Japanese Patent Application Laid-Open No. 57-11556 discloses that a photoconductive member having a photoconductive layer composed of an a-Si deposited film has an electrical property such as dark resistance, photosensitivity, and photoresponsiveness. In order to improve the use environment characteristics such as optical and photoconductive properties and moisture resistance, as well as the stability over time, silicon atoms and carbon atoms are formed on a photoconductive layer composed of an amorphous material containing silicon atoms as a base material. A technique for providing a surface layer made of a non-photoconductive amorphous material containing is described.

Further, Japanese Patent Application Laid-Open No. Sho 60-67951 describes a technique relating to a photoconductor in which a light-transmitting insulating overcoat layer containing amorphous silicon, carbon, oxygen and fluorine is laminated. 62-168161
Japanese Patent Application Laid-Open Publication No. H11-163,887 describes a technique using an amorphous material containing silicon atoms, carbon atoms, and 41 to 70 atomic% of hydrogen atoms as constituent elements as a surface layer.

Furthermore, in JP-A-57-158650, hydrogen containing 10 to 40 atomic%, 0.2 absorption coefficient ratio of the absorption peak of 2100 cm ^-1 and 2000 cm ^-1 in the infrared absorption spectrum It is described that a photosensitive member for an image forming apparatus having high sensitivity and high resistance can be obtained by using a-Si: H of 1.7 for the photoconductive layer.

On the other hand, Japanese Patent Application Laid-Open No. 60-95551 discloses that in order to improve the image quality of an amorphous silicon photoreceptor, the temperature near the surface of the photoreceptor is maintained at 30 to 40.degree. By performing such an image forming process, there is disclosed a technique for preventing a reduction in surface resistance due to the adsorption of moisture on the surface of a photoreceptor and an image deletion caused thereby.

[0011] These techniques have improved the electrical, optical, photoconductive properties and operating environment properties of the photoreceptor for an image forming apparatus, and accordingly the image quality.

Means for providing a heat source on the inner surface of the photoreceptor in order to prevent or remove the high-humidity image flow on the photoreceptor is well known, and a planar or rod-shaped electric heater is disposed on the inner surface of the cylindrical photoreceptor. Are common.

For example, Japanese Utility Model Publication No. 1-32055 discloses a method of always heating with a heater in order to prevent image deletion. These heaters usually have a capacity of 15
W to 80 W, which is not necessarily a large amount of power, but is often always energized even at night, and the power consumption per day is 5 times the power consumption of the entire image forming apparatus.
~ 15%.

As a developing method, monochrome, color, etc.
Various systems such as one-component development and two-component brush development have been devised or adopted depending on the needs. Generally, it is considered that the two-component brush development is superior to the one-component development in image reproduction characteristics, but each method has its own characteristics.

The characteristics of the main developing methods are as follows.

(A) BMT method / FEED method (one-component / insulation / magnetism / contact) In particular, the FEED method can provide almost the same image characteristics as two-component brush development.

(B) Touch-down method (one-component, insulating, non-magnetic, contact) Fogging due to contact development is a problem.

(C) Jumping method (one-component, insulating, magnetic, non-contact) Since there is no contact, there is little problem of fogging and flaws.

(D) Projection method (one-component, insulating, non-magnetic, non-contact) Due to non-contact, there is little problem of fogging and flaws, and since it is non-magnetic, colorization is possible.

(E) Magnedynamic method (one component, conductivity, magnetism, contact) Induction charging by a latent image electric field, brush development. Both positive and negative latent images can be developed, but transfer is difficult.

(F) IMB method (two-component, insulating, non-magnetic, contact) Due to the insulating carrier, charges of opposite polarity after development are accumulated. The solid part has poor reproducibility, but the fine line has good reproducibility.

(G) CMB method (two-component, insulating, non-magnetic, contact) Due to the conductive carrier, no charge of the opposite polarity is accumulated after development. The solid portion has good reproducibility, but the reproducibility of a low-density thin line is poor.

[0023]

With the versatility of electrophotographic apparatuses and the saving of space in offices and the like, there has been a demand for space saving, multifunction, and high copy speed. Therefore, it is required to increase the speed, reduce the size, and increase the number of functions in terms of design, and there are some problems to be solved.

From the viewpoint of energy saving, the use of the drum heater is stopped or the current value of the charger is reduced,
It is necessary to reduce the power consumption of the entire electrophotographic apparatus.

In order to increase the speed, even when the width of the charging device is the same, the time required for the photosensitive member to pass through the charging device is shortened.
Uniform charging becomes difficult. As a means for uniformly charging a photoreceptor, a corona discharge type charging method in which a charging wire is provided on a drum surface of a charger has been known. In this case, when the process speed was low or the charging device had a sufficient width, sufficient charge could be obtained on the photoconductor.

Also, a method of making the potential in the vicinity of the charger uniform by using a grid in which several to about 20 wires are stretched between the charging wire and the photoreceptor is adopted. When the charging speed is not sufficient or when the process speed is high, the charging potential is limited by the grid, and it becomes difficult to charge the photosensitive member surface to a high potential. Even when the grid was used, the unevenness was reduced as compared with the case without the grid. However, when the photosensitive member having large unevenness was used, the unevenness could not be sufficiently reduced.

On the other hand, when the current of the charging wire is increased, a high potential is applied on the photoreceptor. However, by increasing the current, a high electric field is generated in the charger, and leakage and the like are liable to occur. When these leaks occur, the high voltage of the charger discharges to the surface of the photoreceptor, and image defects may occur. Also, when the current value is large, the power consumption increases, and the current value cannot be increased from the viewpoint of energy saving.

In order to reduce the size and increase the number of functions, the number of units arranged on the photoconductor increases, the width of the charger is limited, and the time required for the photoconductor to pass through the charger decreases. , It became difficult to uniformly charge.

Further, even if the problem of the above-mentioned unevenness is solved, if the temperature dependence of the photosensitive member characteristics is large, it is considered that the actual photosensitive member is 1-342.
It is not possible to stop the temperature control of the photoconductor by the heater as described in Japanese Patent Application Laid-Open No. 05-2005.

Therefore, a conductive support, a photoconductive layer made of a non-single-crystal material containing hydrogen atoms (or a hydrogen atom and a halogen atom) based on silicon atoms, and exhibiting photoconductivity, and holding electric charge. a photosensitive layer having a surface layer having a function, the photoconductive layer contains 10 to 30 atomic% of _{hydrogen, Si-H 2 / Si-} H is 0.2 to 0.5
In at least a portion where light is incident, the characteristic energy of the exponential function tail obtained from the sub-bandgap optical absorption spectrum is 50 to 60 meV, and the localized state density at 0.45 to 0.95 eV below the conduction band edge is 1 × 1
By using a photoreceptor having a surface layer having an electric resistance value of 1 × 10 ¹⁰ to 1 × 10 ¹⁵ Ωcm which is not less than 0 ^{14 and} less than 1 × 10 ¹⁶ cm ⁻³ , the temperature dependency of the characteristics is greatly improved. Thus, the temperature control of the photoconductor can be stopped. But,
In such a photoreceptor, it is more difficult to reduce the unevenness in the manufacturing process than in the related art, and the increase in the speed and the reduction in the size of the charger worked in a direction to further increase the unevenness.

Therefore, when designing an image forming apparatus or an electrophotographic image forming method, the electrophotographic physical properties, mechanical durability and the like of the photoreceptor for the image forming apparatus are comprehensively set so as to solve the above-mentioned problems. To improve from a global perspective,
There is a need to further improve the charging device and the image forming apparatus, which have good charging efficiency and uniformly charge.

The present invention has been made in view of the above-mentioned problems, and it is possible to improve the electrophotographic properties, mechanical durability, etc., even if the time required for the photosensitive member to pass through the charger is shortened. Another object of the present invention is to provide a charger capable of efficiently and uniformly obtaining a high charge on the surface of a photoreceptor, and an electrophotographic apparatus using the same.

[0033]

SUMMARY OF THE INVENTION The present invention relates to a charger for charging a photoreceptor for an image forming apparatus, comprising: a charging wire disposed substantially parallel to the photoreceptor; A slit-shaped member having an opening, surrounding the charging wire and comprising a conductive two shield plate substantially parallel to the charging wire and a member surrounding the periphery thereof, wherein the opening is formed between the two shield plates; The present invention relates to a charging device including a shield device as an opening, wherein a charging current flowing from the charging wire to a photoconductor changes along a generatrix direction of the photoconductor.

In order to configure the charging current to vary along the direction of the generatrix of the photoconductor, it is necessary to change at least one shield effective distance of the shield plate along the direction of the generatrix of the photoconductor. Can be. However, the shield effective distance of the shield plate means a distance that effectively functions as a shield plate in a direction toward the photoreceptor from a perpendicular foot lowered on the shield plate from a certain point of the charging wire.

In the charging device of the present invention, when a voltage is applied to the charging wire, a charging electric field is generated between the charging wire and the shield plate, and a charging current flows from the charging wire to the photosensitive member to charge the surface of the photosensitive member. This charger is effective to be applied to a photoreceptor having uneven charging in the generatrix direction, and applies a charging current flowing from the charging wire to the photoreceptor in the generatrix direction (the direction along the charging wire, which is cylindrical). (In the case of a drum photoreceptor, it is the axial direction of the cylinder.) The unevenness accompanying the photoreceptor can be canceled so that the surface of the photoreceptor can be charged evenly.

In the charger of the present invention, a charging current flows from the charging wire to the photosensitive member, and a discharge current (corona current) also flows to the shield plate. Therefore, the charging current can be controlled by changing the effective shield distance of the shield plate.

As one means, it is possible to change the effective distance of the shield by changing the distance to the opening end of at least one shield plate, and to reduce the uneven charging of the photoconductor by changing the effective distance along the generatrix. Can be. Here, the distance from the opening end of the shield plate to the end of the opening in the direction toward the photoreceptor from the leg of the perpendicular drawn from the point of the charging wire onto the shield plate.

The shield plate can be composed of a combination of at least two conductive plates each including a fixed portion and a movable portion. According to this charger, the distance to the end of the opening can be adjusted according to the unevenness. Therefore, the distance to the end of the opening can be changed by moving the movable portion.

In the present invention, the distance (L) between the fixed part and the movable part at the connection point is expressed by the following equation (1): 2/10 × d ≦ L ≦ 8/10 × d (where the distance between the fixed part and the movable part is Distance to connection point (L)
Is the distance from the foot of the perpendicular drawn down on the shield plate from a certain point of the charging wire to the end of the fixed part in the direction of the photoconductor, and d is the distance between the charging wire and the photoconductor. It is particularly preferable to satisfy the condition (1) because a particularly uniform charge can be obtained without causing a leak.

As a means for changing the shield effective distance, a movable insulator that covers the inner surface of the shield plate can be achieved. The charging current changes by adjusting the exposure of the shield plate by moving the insulator.

The photosensitive member for an image forming apparatus to which the above charger is applied includes a conductive support and a light composed of a non-single-crystal material containing silicon atoms as bases and containing hydrogen atoms (or hydrogen atoms and halogen atoms). 2. Description of the Related Art An image forming apparatus comprising a photoconductive layer exhibiting conductivity and a photosensitive layer having a surface layer having a function of retaining charges made of a non-single-crystal material containing hydrogen atoms and / or halogen atoms based on silicon atoms A photoconductor, wherein the photoconductive layer comprises 1
Si—H ₂ / Si—H containing 0-30 atomic% hydrogen
Is 0.2 to 0.5, and the characteristic energy of the exponential function tail obtained from the sub-bandgap light absorption spectrum is at least 50 to 60 me at least at the part where light is incident.
V, and the localized state density at 0.45 to 0.95 eV below the conduction band edge is 1 × 10 ¹⁴ or more and less than 1 × 10 ¹⁶ cm ⁻³ ,
It is preferable that the surface layer has an electric resistance of 1 × 10 ¹⁰ to 1 × ¹⁵ Ωcm.

The charger of the present invention is suitably used for an electrophotographic apparatus.

[0043]

BRIEF DESCRIPTION OF THE DRAWINGS FIG.

FIG. 1A shows the photoreceptor 101 and the charger 102 constituting the electrophotographic apparatus. The photoreceptor 101 has a cylindrical shape, and rotates in a direction indicated by an arrow at a process speed of Ps [mm / s]. The charger 102 includes a housing and a charging wire 104 inside. The housing is composed of two shield plates 1 on an insulating member.
20 facing each other. The charging wire 104 is connected to a high voltage power supply, and the opposing shield plate 120 is dropped to the ground potential. When a high voltage is applied to the charging wire 104, a corona discharge occurs inside the housing, and the photosensitive member 101
The surface potential rises.

FIG. 1B shows a shield plate of the present invention, in which the distance to the end of the opening is changed along the generatrix direction of the photosensitive member. Is a shield plate without moving parts,
Is a shield plate composed of a fixed part and a movable part. The shield plate including the fixed portion and the movable portion is preferable because it can be changed according to the photoconductor.

For example, by using a shield plate having a fixed part and a movable part as shown in FIG. 1 as at least one shield plate, it is possible to adjust the unevenness of the charged potential.

In the shield plate, the movable portion is a single plate.
The right side moves around the left end as a fulcrum,
In the state where the movable portion is pulled out most (illustrated state), the distance to the end of the opening increases toward the right side, and when the movable portion is pushed most, the distance to the end of the opening decreases toward the right side. The shield plate having this configuration can be applied to a photosensitive member having a tendency to have a charging ability such that the charging potential increases or decreases from the left end to the right end along the generatrix direction of the photosensitive member.

In the shield plate, the movable portion is composed of two plates, and the left portion and the right portion move independently of each other with the center as a fulcrum. In the state (state), the distance to the opening end is larger as going to the right or left side as compared to the center, and in the state where the movable part is pushed most, the distance to the opening end is smaller as going to the right or left side. The shield plate having this configuration can be applied to a photosensitive member having a tendency to have a charging ability such that the charging potential increases or decreases from the center to the left end or the right end along the generatrix direction of the photosensitive member.

By increasing the number of movable parts as described above, it is possible to cope with a photosensitive member having a small uneven charging ability.

The movable distance of the movable part is about 0.6 d, preferably about 0.4 d, and is preferably adjusted by moving the movable part at the center of the range of L. For example, the right end can move by this distance.

For a photosensitive member in which the distribution of charging ability unevenness is known in advance, it is possible to use a shield plate having no movable portion processed in accordance with the uneven shape, or a shield plate having a fixed portion and a movable portion. After confirming the reduction, the shape may be made of one shield plate, and a shield plate having no movable portion may be used.

FIG. 5 shows a detailed view of the shield plate.
The shield plate is formed by combining the conductive plates of the fixed part 521 and the movable part 522. The charging wire faces the fixed part, and a distance L (L2 in the figure) between the fixed part and the connection part of the movable part is 2/10 × d or more from the opposite part of the charging wire. It is in a portion of 10 × d or less.

That is, if the length L (L2 in the figure) to the connecting portion with the movable portion becomes too large, the effect of reducing unevenness with respect to the change of the movable portion becomes small, so that 8/10 × d. On the other hand, if the distance L is not sufficient, a leak occurs in the charger and uniform corona discharge becomes difficult, so that it is preferably 2/10 × d or more. It should be noted that this is not a problem when the shield plate is made of a thin plate material,
More specifically, it is particularly preferable that the distance L1 between the fixed portion 521 and the inner surface edge of the plate shown in the drawing be 2/10 × d or more.

Further, when the connection portion has a projection or the like, a leak occurs in the projection portion and stable discharge cannot be performed. For example, as shown in the figure, it is preferable to smoothly connect the fixed portion end faces of the connecting portions without forming an acute angle portion on the inner surface.

The connection between the fixed part and the movable part may be made by any connection method that does not cause protrusions inside. For example, a groove or a fixed part may be provided outside the fixed part 521. The movable part can be freely moved and fixed.

The distance (d) from the charging wire to the surface of the photoreceptor is usually about 5 to 15 mm.

In the above description, the charging wire is 1
Although the book was used, as shown in FIG. 5B), two or more charging wires may be stretched in parallel depending on conditions or the like, so that unevenness can be further reduced.

FIG. 6 is a detailed view showing a case where a movable insulator is disposed inside the shield plate instead of providing a movable portion on the shield plate. The shield plate includes a fixed portion 621 formed of a conductive plate and a movable insulating portion 6 formed of an insulating plate.
22 are combined.

In this case, as in the case of the shield plate including the fixed portion and the movable portion, the number of movable insulators can be one or more. For example, when one insulator is used, one end is fixed, and the other end is moved, thereby changing the exposed portion of the shield plate to change the shield effective distance. Such a charger can be applied to a photosensitive member having a tendency to have a charging ability such that the charging potential increases or decreases from the left end to the right end along the generatrix direction of the photosensitive member.

Further, a plurality of insulators can be used for a photosensitive member having different tendency of uneven charging ability, and the same can be applied in the same manner as described above.

Further, as shown in FIG.
Stretching the book or more charging wires in parallel has the effect of further reducing unevenness.

The preferred amorphous silicon photosensitive member used in the present invention will be described below.

The present inventors have focused on the behavior of carriers in the photoconductive layer of the amorphous silicon photoreceptor, and have intensively studied the relationship between the distribution of localized states in the band gap, the temperature dependence of the charging ability, and the optical memory. As a result, a photoconductor having a photoconductive layer composed of a non-single-crystal material containing a silicon atom as a base and a hydrogen atom (or a hydrogen atom and a halogen atom) is designed to specify the layer structure. The produced photoreceptor not only shows remarkably excellent properties in practical use, but also surpasses conventional photoreceptors in every respect, and has excellent properties especially as a photoreceptor for an image forming apparatus. Was.

That is, the photoreceptor for an image forming apparatus used in the present invention comprises a conductive support and a photosensitive layer having a photoconductive layer made of a non-single-crystal material having silicon atoms as a base material. conductive layer comprises 10 to 30 atomic% of _{hydrogen, Si-H 2 / Si-} H is 0.2 to 0.5, in the incident portion of at least the light obtained from the sub-bandgap light absorption spectrum index The characteristic energy of the function tail is 50 to 60 meV and the bottom of the conduction band is 0.1 meV.
Localized density of states at 45 to 0.95 eV is 1 × 10 ¹⁴
It is preferably about 1 × 10 ¹⁶ cm ⁻³ .

The photoreceptor for an image forming apparatus designed to have such a configuration solves the problems of temperature dependency of charging ability and optical memory, and has excellent electrical, optical and photoconductive properties. , Image quality, durability and use environment characteristics.

Generally, in the band gap of a-Si: H, the tail (tail) level based on the structural disorder of the Si—Si bond and the dangling bond of Si
And other deep levels due to structural defects. It is known that these levels function as trapping and recombination centers for electrons and holes, and cause deterioration of device characteristics.

As a method for measuring the state of the localized level in the band gap, generally, deep level spectroscopy, isothermal capacity transient spectroscopy, photothermal deflection spectroscopy, constant photocurrent method and the like are used. . Above all, constant photocurrent method [Constant Photo
current Method: Hereinafter abbreviated as “CPM”] is a
This is useful as a method for simply measuring a subgap light absorption spectrum based on the localized level of -Si: H.

The present inventors have proposed a characteristic energy (hereinafter abbreviated as “Eu”) of an exponential function tail (hereinafter referred to as “Eu”) and a localized density of states (hereinafter referred to as “Eu”) obtained from an optical absorption spectrum measured by CPM. As a result of examining the correlation between the photoconductor characteristics and the photoconductor characteristics under various conditions, it was found that Eu and DOS are closely related to the temperature characteristics of the a-Si photoconductor and the optical memory.

The reason why the charging ability is reduced when the photosensitive member is heated by a drum heater or the like is that a thermally excited carrier (hereinafter, referred to as a thermally excited carrier) is attracted by an electric field at the time of charging and localization of a band tail. It travels to the surface while repeating capture and emission to a level or a deep localized level in the band gap, thereby canceling the surface charge. At this time, for the thermally excited carriers that reach the surface while passing through the charger, there is almost no effect on the decrease in charging ability,
The thermally excited carriers captured at the deep level reach the surface after passing through the charger and are observed as a temperature characteristic because the surface charge is canceled. In addition, thermally excited carriers that are thermally excited after passing through the charger also cancel the surface charge and cause a reduction in charging ability. Therefore, it is necessary to suppress the generation of thermally excited carriers in the operating temperature region of the photoconductor and to improve the traveling properties of the thermally excited carriers in order to improve the temperature characteristics.

Further, the optical memory is generated by the photo carriers generated by the blank exposure or the image exposure being trapped at the localized level in the band gap and remaining in the photoconductive layer. That is, of the photocarriers generated in a certain copying process, the photocarriers remaining in the photoconductive layer are swept out by the electric field due to the surface charge at the next charging or thereafter, and the potential of the light-irradiated portion becomes another. , Which results in shading on the image. Therefore, it is necessary to improve the traveling property of the photocarrier so that the photocarrier travels in one copying process without remaining in the photoconductive layer.

Therefore, by controlling Eu and the DOS within a specific energy range as in the case of the above-described photoreceptor, the generation of thermally excited carriers is suppressed, and the thermally excited carriers and photocarriers are captured at localized levels. Since the ratio can be reduced, the traveling properties of the carriers (hereinafter, referred to as charge carriers) are significantly improved. As a result, the temperature characteristics of the photoconductor in the operating temperature range are dramatically improved, and at the same time, the occurrence of optical memory can be suppressed, so that the stability of the photoconductor in the usage environment is improved and the halftone is sharp. And a high-quality image with high resolution can be stably obtained.

Hereinafter, the photosensitive member of the present invention will be described in detail with reference to the drawings.

FIG. 11 is a schematic configuration diagram for explaining the layer configuration of the photosensitive member for an image forming apparatus of the present invention.

A photoconductor 1100 for an image forming apparatus shown in FIG. 11A is provided on a support 1101 for a photoconductor.
A photosensitive layer 1102 is provided. The photosensitive layer 1102 is composed of a-Si: H, X and has photoconductivity.
103.

FIG. 11B is a schematic structural view for explaining another layer of the photoreceptor for an image forming apparatus of the present invention.
A photoconductor 1100 for an image forming apparatus shown in FIG.
A photosensitive layer 110 is provided on a support 1101 for a photosensitive member.
2 are provided. The photosensitive layer 1102 is made of a-Si:
A photoconductive layer 1103 made of H and X and having photoconductivity;
And an amorphous silicon-based surface layer 1104.

FIG. 11C is a schematic structural view for explaining another layer constitution of the photoreceptor for an image forming apparatus of the present invention. Photoconductor 1100 for an image forming apparatus shown in FIG.
Is a photosensitive layer 1 on a support 1101 for a photosensitive member.
102 are provided. The photosensitive layer 1102 is a-S
i: Photoconductive layer 1103 made of H and X and having photoconductivity
, An amorphous silicon-based surface layer 1104, and an amorphous silicon-based charge injection blocking layer 1105.

FIG. 11D is a schematic configuration diagram for explaining still another layer configuration of the photoreceptor for an image forming apparatus of the present invention. Photoconductor 1 for image forming apparatus shown in FIG.
In 100, a photosensitive layer 1102 is provided on a support 1101 for a photosensitive member. The photosensitive layer 1102 includes a charge generation layer 1106 made of a-Si: H, X and a charge transport layer 1107 constituting the photoconductive layer 1103, and an amorphous silicon-based surface layer 1104.

The support used in the present invention is preferably a conductive support. As the material of the conductive support, Al, Cr, Mo, Au, In, Nb, Te,
Examples include metals such as V, Ti, Pt, Pd, and Fe, and alloys thereof, such as stainless steel. In addition, at least the surface on the side on which the photosensitive layer is formed of an electrically insulating material such as a film or sheet of a synthetic resin such as polyester, polyethylene, polycarbonate, cellulose acetate, polypropylene, polyvinyl chloride, polystyrene, or polyamide, or glass or ceramic is electrically conductive. The processed one can also be used.

The support 1101 used in the present invention
May be a cylindrical or plate-like endless belt having a smooth surface or an uneven surface, and the thickness thereof is appropriately determined so as to form a desired photoreceptor 1100 for an image forming apparatus. When the flexibility of the photoconductor 1100 for the forming apparatus is required, the thickness can be reduced as much as possible within a range where the function as the support 1101 can be sufficiently exhibited. However, the support 1101 is usually preferably 10 μm or more from the viewpoints of production, handling, mechanical strength and the like.

In particular, when performing image recording using coherent light such as laser light, the number of charged carriers must be reduced in order to more effectively eliminate image defects caused by so-called interference fringe patterns appearing in a visible image. Irregularities may be provided on the surface of the support 1101 within a substantially non-existent range. Support 110
The unevenness provided on the surface of No. 1 is disclosed in JP-A-60-16815.
No. 6, No. 60-178457, No. 60-22
It is prepared by a known method described in, for example, Japanese Patent No. 5854.

As another method for more effectively eliminating image defects due to interference fringe patterns when coherent light such as laser light is used, the support 1101 is supported within a range where charging carriers are not substantially reduced. The surface may be provided with an uneven shape by a plurality of spherical trace depressions. That is, the surface of the support 1101 has irregularities smaller than the resolution required for the photoconductor 1100 for an image forming apparatus, and the irregularities are caused by a plurality of spherical trace depressions. Unevenness due to a plurality of spherical trace depressions provided on the surface of the support 1101 is disclosed in
It is prepared by a known method described in Japanese Patent Application Laid-Open No. 1-2231561.

Further, as still another method for more effectively eliminating image defects due to interference fringe patterns when using coherent light such as laser light, light is applied to the inside of the photosensitive layer 1102 or below the layer 1102. An interference prevention layer or region such as an absorption layer may be provided.

The photoconductive layer preferably used in the present invention is made of a non-single-crystal material containing silicon atoms as a base and containing hydrogen atoms (or hydrogen atoms and halogen atoms) as described above, and has a content of 10 to 30 atomic%. Containing hydrogen, Si-H
₂ / Si—H is 0.2 to 0.5, and the characteristic energy of the exponential function tail obtained from the sub-bandgap light absorption spectrum is 50 at least in the part where light is incident.
６０60 meV and 0.45 to 0.95 eV below the conduction band edge
Is 1 × 10 ¹⁴ or more and 1 × 10 ¹⁶ cm
Consists of less than ^-3 materials.

The photoconductive layer 1103 is formed on the support 1101
After forming an undercoat layer (not shown) on the support, or on an as-needed basis, the numerical conditions of the film forming parameters are appropriately set so that desired characteristics can be obtained by a vacuum deposited film forming method. Is created. Specifically, for example, a glow discharge method (an AC discharge CVD method such as a low-frequency CVD method, a high-frequency CVD method or a microwave CVD method, or a DC discharge CVD method), a sputtering method, a vacuum deposition method, an ion plating method, It can be formed by various thin film deposition methods such as a photo CVD method and a thermal CVD method. These thin film deposition methods are appropriately selected and adopted depending on factors such as manufacturing conditions, the degree of load under capital investment, the manufacturing scale, and the characteristics required for a photoconductor for an image forming apparatus to be manufactured.
The glow discharge method, particularly the high-frequency glow discharge method using a power supply frequency in the RF band or the VHF band, is preferable because it is relatively easy to control the conditions for manufacturing a photosensitive member for an image forming apparatus having desired characteristics. is there.

In order to form the photoconductive layer 1103 by the glow discharge method, basically, a source gas for supplying Si that can supply silicon atoms (Si) and a source gas for supplying H that can supply hydrogen atoms (H) are used. Is introduced in a desired gas state into a reaction vessel in which the inside can be reduced in pressure, and a glow discharge is generated in the reaction vessel. A-S on a predetermined support 1101 previously set at a predetermined position.
i: A layer composed of H and X may be formed.

The photoconductive layer 1103 needs to contain hydrogen atoms (or hydrogen atoms and halogen atoms), which compensates for dangling bonds of silicon atoms and improves the layer quality. In particular, it is indispensable for improving photoconductivity and charge retention characteristics. Therefore, the content of hydrogen atoms is preferably 10 to 30 atom%, more preferably 15 to 25 atom%, based on the sum of silicon atoms and hydrogen atoms (or the amount of halogen atoms added).
Atomic% is desirable.

The substances that can be used as the Si supply gas used in the present invention include SiH ₄ , Si ₂ H ₆ , Si ₃
Silicon hydrides (silanes) in a gas state such as H ₈ , Si ₄ H ₁₀ or the like, which can be gasified, are effectively used, and further, ease of handling at the time of forming a layer, good Si supply efficiency, etc. In view of the above, SiH ₄ and Si ₂ H ₆ are preferred.

Then, hydrogen atoms are structurally introduced into the formed photoconductive layer 1103 so that the introduction ratio of hydrogen atoms can be more easily controlled, and the film characteristics that achieve the object of the present invention can be obtained. Therefore, it is necessary to form a layer by mixing a desired amount of a gas of H ₂ and / or He or a silicon compound containing a hydrogen atom with these gases. Further, each gas is not limited to a single species, and a plurality of species may be mixed at a predetermined mixture ratio.

The halogen source used in the present invention
For example, halogen is effective as a source gas for supplying
Gas, halide, interhalogen compound containing halogen
Gas or silane derivative substituted with halogen, etc.
Or gaseous halogen compounds are preferably mentioned.
You. In addition, silicon atoms and halogen atoms are composed.
Gaseous or gasifiable halogen source
Silicon hydride compounds containing
Can be. Halogen that can be suitably used in the present invention
As the compound, specifically, fluorine gas (F_Two ), Br
F, ClF, ClF _Three , BrF_Three , BrF_Five , IF_Three ,
IF₇ And the like. C
A silicon compound containing a halogen atom, a so-called halogen atom
As the substituted silane derivative, specifically, for example,
SiF_Four , Si_Two F₆ Is preferred.
Can be mentioned.

In order to control the amount of hydrogen atoms (or hydrogen atoms and halogen atoms) contained in the photoconductive layer 1103, for example, the temperature of the support 1101 and hydrogen atoms (or hydrogen and halogen atoms) are contained. What is necessary is just to control the amount of the raw material used for the introduction into the reaction vessel, the discharge power and the like.

In the present invention, it is preferable that the photoconductive layer 1103 contains atoms for controlling conductivity as necessary. The atoms that control the conductivity are the photoconductive layer 1103.
It may be contained in a uniformly distributed state therein, or there may be a part contained in a non-uniform distribution state in the layer thickness direction.

Examples of the atoms for controlling the conductivity include so-called impurities in the field of semiconductors.
An atom belonging to Group IIIb of the Periodic Table giving p-type conduction characteristics (hereinafter abbreviated as “IIIb group atom”) or an atom belonging to Group Vb of the Periodic Table giving n-type conduction characteristics (hereinafter “V
abbreviated as “group b atom”).

Specific examples of Group IIIb atoms include boron (B), aluminum (Al), gallium (Ga), indium (In), and thallium (Tl). It is suitable. Group Vb atoms include:
Specifically, phosphorus (P), arsenic (As), antimony (S
b), bismuth (Bi) and the like, and P and As are particularly preferable.

The content of atoms for controlling the conductivity contained in the photoconductive layer 1103 is preferably 1 × 10 ^-2 to
1 × 10 ⁴ atomic ppm, more preferably 5 × 10 ^{-2 to} 5
× 10 ³ atomic ppm, optimally 1 × 10 ^-1 to 1 × 10 ³
Atomic ppm.

In order to structurally introduce an atom for controlling conductivity, for example, a group IIIb atom or a group Vb atom, a source material for introducing a group IIIb atom or a V
A raw material for introducing a group b atom in a gaseous state into a reaction vessel,
It may be introduced together with another gas for forming the photoconductive layer 1103. As a raw material for introducing a Group IIIb atom or a raw material for introducing a Group Vb atom, it is preferable to employ a material which is gaseous at ordinary temperature and normal pressure or which can be easily gasified at least under layer forming conditions. desirable.

As the raw material for introducing group IIIb atoms, specifically, for introducing boron atoms, B ₂ H
_{6, B 4 H 10, B} 5 H 9, B 5 H 11, B 6 H 10, B 6 H
_12, B ₆ H ₁₄ borohydride such as, BF _3, BCl _3, BB
and boron halide such as r ₃ . In addition, Al
Cl ₃ , GaCl ₃ , Ga (CH ₃ ) ₃ , InCl ₃ ,
TlCl _{3 and the} like can also be mentioned.

[0097] being effectively used as a raw material for the Vb atoms introduced as the for introducing phosphorus atoms, PH _3, P
Phosphorus hydride such as ₂ H ₄ , PH ₄ I, PF ₃ , PF ₅ , PC
and phosphorus halides such as l ₃ , PCl ₅ , PBr ₃ , PBr ₅ and PI ₃ . In addition, AsH ₃ , AsF ₃ ,
AsCl ₃ , AsBr ₃ , AsF ₅ , SbH ₃ , SbF
_{3, SbF 5, SbCl 3,} SbCl 5, BiH 3, B
iCl ₃ , BiBr _{3 and the} like can also be mentioned as effective starting materials for introducing a group Vb atom.

Further, these raw materials for introducing atoms for controlling conductivity may be diluted with H ₂ and / or He if necessary.

Further, in the present invention, the photoconductive layer 110
It is also effective that 3 contains a carbon atom and / or an oxygen atom and / or a nitrogen atom. The content of carbon atoms and / or oxygen atoms and / or nitrogen atoms is preferably 1 × 10 ⁻⁵ to 10 at%, more preferably 1 × 1 to 10% by weight based on the sum of silicon atoms, carbon atoms, oxygen atoms and nitrogen atoms.
0 ^-4 to 8 atomic%, optimally 1 × 10 ^{-3 to} 5 atomic% is desirable. The carbon atoms and / or oxygen atoms and / or nitrogen atoms may be evenly and uniformly contained in the photoconductive layer, or may have an uneven distribution such that the content changes in the thickness direction of the photoconductive layer. May be provided.

In the present invention, the thickness of the photoconductive layer 1103 can be set in consideration of desired electrophotographic characteristics and economical effects, but is preferably 20 to 50 μm, more preferably 23 to 45 μm, and most preferably 23 to 45 μm. Is 25 to 40 μm.

In order to achieve the object of the present invention and to form the photoconductive layer 1103 having desired film properties, the mixing ratio of the gas for supplying Si and the diluent gas, the gas pressure in the reaction vessel, the discharge power, It is necessary to appropriately set the temperature of the support.

[0102] The flow rate of H ₂ and / or He used as a dilution gas is properly selected within an optimum range in accordance with the layer design, H with respect to Si-feeding gas ₂ and / or H
It is desirable to control e in a range of usually 3 to 30 times, preferably 4 to 15 times, and most preferably 5 to 10 times.

Similarly, the optimum range of the gas pressure in the reaction vessel is appropriately selected according to the layer design.
0 ^{-4 to} 10 Torr, preferably 5 × 10 ^{-4 to} 5 Torr
r, and most preferably, 1 × 10 ^{−3 to} 1 Torr.

Similarly, the optimum range of the discharge power is also appropriately selected according to the layer design. The flow rate of the gas for supplying Si (unit: sccm (flow rate of gas per minute in standard state (cc))) Is usually 2 to 7 times (W / sccm), preferably 2.5 times
~ 6 times (W / sccm), optimally 3-5 times (W / sccm)
cm).

Further, the temperature of the support 1101 is appropriately selected in an optimum range according to the layer design, but is preferably 200 to 350 ° C., more preferably 230 to 330 ° C.
Most preferably, the temperature is set to 250 to 310 ° C.

In the present invention, the preferable ranges of the temperature of the support and the gas pressure for forming the photoconductive layer include the above-mentioned ranges, but the conditions are not usually determined independently and separately. It is desirable to determine optimal values based on mutual and organic relationships to form a light-receiving member having desired properties. In the present invention, the photoconductive layer 110 formed on the support 1101 as described above is used.
3 and an amorphous silicon-based surface layer 11
04 is preferably formed. The surface layer 1104 has a free surface 1110 and is provided mainly for improving moisture resistance, continuous repeated use characteristics, electric pressure resistance, use environment characteristics, and durability.

Further, in this configuration, since each of the amorphous materials forming the photoconductive layer 1103 and the surface layer 1104 forming the photosensitive layer 1102 has a common component of silicon atoms, the lamination interface Has ensured sufficient chemical stability.

The surface layer 1104 is not particularly limited as long as it is an amorphous silicon-based material. For example, amorphous silicon (H) and / or halogen atom (X) which further contains carbon atoms and amorphous silicon (H) is used. The following "a
-SiC: H, X "), amorphous silicon containing a hydrogen atom (H) and / or a halogen atom (X) and further containing an oxygen atom (hereinafter referred to as" a-SiO:
H, X), amorphous silicon containing a hydrogen atom (H) and / or a halogen atom (X), and further containing a nitrogen atom (hereinafter referred to as “a-SiN: H, X”); Amorphous silicon containing a hydrogen atom (H) and / or a halogen atom (X) and further containing at least one of a carbon atom, an oxygen atom, and a nitrogen atom (hereinafter referred to as “a-SiCON: H, X”) Etc. can be used.

Among these, a-SiC: H, X, and a-SiCON containing at least carbon atom:
Those containing a-SiC as a main component, such as H and X, are preferable.

In the present invention, in order to effectively achieve the object, the surface layer 1104 is formed by a vacuum deposition film forming method by appropriately setting numerical conditions of film forming parameters so as to obtain desired characteristics. . Specifically, for example, a glow discharge method (an AC discharge CVD method such as a low-frequency CVD method, a high-frequency CVD method or a microwave CVD method, or a DC discharge CVD method), a sputtering method, a vacuum deposition method, an ion plating method, It can be formed by various thin film deposition methods such as a photo CVD method and a thermal CVD method.
These thin film deposition methods are appropriately selected and adopted depending on factors such as manufacturing conditions, the degree of load under capital investment, the manufacturing scale, and the characteristics desired for the photoconductor for an image forming apparatus to be manufactured. It is preferable to use the same deposition method as that for the photoconductive layer from the viewpoint of productivity.

[0111] For example, a-Si
In order to form the surface layer 1104 made of C: H, X, a raw material gas for supplying Si that can supply silicon atoms (Si) and a raw material for supplying C that can supply carbon atoms (C) are basically used. A gas and a source gas for supplying H that can supply hydrogen atoms (H) or / and a source gas for supplying X that can supply halogen atoms (X) are mixed with a desired gas in a reaction vessel that can reduce the pressure inside. Glow discharge is generated in the reaction vessel, and a-SiC is formed on a support 1101 on which a photoconductive layer 1103 previously placed at a predetermined position is formed.
What is necessary is just to form the layer which consists of H and X.

When the surface layer is composed mainly of a-SiC, the amount of carbon is preferably in the range of 30% to 90% with respect to the sum of silicon atoms and carbon atoms.

In the present invention, it is necessary for the surface layer 1104 to contain hydrogen atoms and / or halogen (preferably fluorine) atoms, which compensate for the dangling bonds of silicon atoms and improve the layer quality. In particular, it is indispensable to improve photoconductivity and charge retention characteristics. In general, the hydrogen content is desirably 30 to 70 atomic%, preferably 35 to 65 atomic%, and most preferably 40 to 60 atomic%, based on the total amount of the constituent atoms. The content of halogen atoms is usually 0.01 to 15 atomic%, preferably 0.1 to 10 atomic%, and most preferably 0.6 to 10 atomic%.
Desirably, it is 4 atomic%.

A photoreceptor having a hydrogen and / or halogen atom content within this range is much better than the conventional one. That is, it is known that defects (mainly, dangling bonds of silicon atoms and carbon atoms) existing in the surface layer adversely affect the characteristics of the photoconductor for an image forming apparatus. The adverse effects include, for example, deterioration of charging characteristics due to injection of electric charges from the free surface to the photoconductive layer, fluctuations in charging characteristics due to a change in the surface structure under the use environment, for example, high humidity, and also during corona charging. Charges are injected into the surface layer by the photoconductive layer at the time of light irradiation, and charges are trapped in defects in the surface layer, thereby causing an afterimage phenomenon at the time of repeated use.

However, when the hydrogen content in the surface layer is 30
By controlling the atomic percentage or more, the number of defects in the surface layer is greatly reduced, and as a result, the electrical characteristics and high-speed continuous usability are dramatically improved as compared with the related art.

On the other hand, when the hydrogen content in the surface layer is 71 atomic% or more, the hardness of the surface layer is reduced, so that it may not be able to withstand repeated use. Therefore,
Controlling the hydrogen content in the surface layer within the above range is one of the very important factors in obtaining extremely excellent electrophotographic properties. The hydrogen content in the surface layer can be controlled by the flow rate of the H ₂ gas, the temperature of the support, the discharge power, the gas pressure, and the like.

Further, by controlling the content of halogen atoms in the surface layer to a range of 0.01 atomic% or more, it is possible to more effectively achieve the bond between silicon atoms and carbon atoms in the surface layer. Becomes Further, the halogen atoms in the surface layer also have a function of effectively preventing the bond between silicon atoms and carbon atoms from being broken due to damage such as corona.

On the other hand, when the halogen atom content in the surface layer is 1
When the content exceeds 5 atomic%, the effect of generating the bond between the silicon atom and the carbon atom in the surface layer and the effect of preventing the breaking of the bond between the silicon atom and the carbon atom are hardly recognized. Furthermore, since the excess halogen atoms hinder the mobility of carriers in the surface layer, the residual potential and the optical memory appear remarkably. Therefore, controlling the halogen content in the surface layer within the above range is one of the important factors in obtaining desired electrophotographic characteristics. Halogen content in the surface layer, the hydrogen content as well as H ₂ gas flow rate, support temperature,
It can be controlled by the discharge power, gas pressure and the like.

The substance which can be a gas for supplying silicon (Si) used in forming the surface layer is SiH
₄ , gaseous silicon hydrides (silanes) such as Si ₂ H ₆ , Si ₃ H ₈ , and Si ₄ H ₁₀ , or gasifiable silicon hydrides are effectively used. SiH ₄ , S in terms of easiness and high Si supply efficiency
i ₂ H ₆ is mentioned as a preferable example. In addition, these source gases for supplying Si may be replaced with H ₂ , He,
It may be used after being diluted with a gas such as Ar or Ne.

Examples of the substance that can serve as a carbon supply gas include:
CH_Four , C_Two H₆ , C_Three H₈ , C_FourH_TenEtc. gas state
Or gasifiable hydrocarbons are used effectively
And the ease of handling when forming the layer, S
i CH in terms of supply efficiency _Four , C_Two H₆ Is preferred
Are listed. In addition, these raw materials for supplying C
H gas as needed_Two , He, Ar, Ne and other gases
You may use it after diluting.

Substances that can be nitrogen or oxygen supply gas include NH ₃ , NO, N ₂ O, NO ₂ , H ₂ O, O
Compounds in the gaseous state or gasifiable compounds such as ₂ , CO, CO ₂ , and N ₂ can be effectively used. Further, these nitrogen and oxygen supply source gases may be diluted with a gas such as H ₂ , He, Ar, Ne or the like as necessary.

In order to further facilitate the control of the introduction ratio of hydrogen atoms introduced into the surface layer 1104 to be formed, a hydrogen gas or a silicon compound gas containing a hydrogen atom is also added to these gases in a desired amount. It is preferable to form a layer by mixing. Further, each gas is not limited to a single species, and a plurality of species may be mixed at a predetermined mixture ratio.

As the source gas for supplying a halogen atom, a gaseous or gasifiable halogen compound such as a halogen gas, a halide, an interhalogen compound containing a halogen, a silane derivative substituted with a halogen, and the like are preferably mentioned. . Further, a gaseous or gasifiable silicon hydride compound containing a halogen atom, which contains a silicon atom and a halogen atom as constituent elements, can also be mentioned as an effective compound.

Examples of the halogen compound that can be suitably used in the present invention include fluorine gas (F ₂ ), Br
F, ClF, ClF ₃ , BrF ₃ , BrF ₅ , IF ₃ ,
And a halogen compound between IF ₇ or the like. As a silicon compound containing a halogen atom, that is, a silane derivative substituted with a so-called halogen atom, specifically, for example, silicon fluoride such as SiF ₄ or Si ₂ F ₆ can be preferably mentioned.

In order to control the amount of hydrogen atoms and / or halogen atoms contained in the surface layer 1104, for example, the temperature of the support 1101, the raw material used to contain hydrogen atoms and / or halogen atoms, etc. The amount to be introduced into the reaction vessel, the discharge power and the like may be controlled.

The carbon atoms and / or oxygen atoms and / or nitrogen atoms may be uniformly contained in the surface layer, or may be non-uniform such that the content changes in the thickness direction of the surface layer. There may be a portion having a distribution.

Further, in the present invention, the surface layer 1104
Preferably contains an atom for controlling conductivity as necessary. The atoms that control conductivity are deposited on the surface layer 110.
4 may be contained in a uniformly distributed state, or there may be a part contained in a non-uniform state in the layer thickness direction.

Examples of the atoms for controlling the conductivity include so-called impurities in the field of semiconductors, and include a group IIIb atom in the periodic table giving p-type conduction characteristics or a group IIIb atom in the periodic table giving n-type conduction characteristics. Group Vb atoms can be used.

Examples of Group IIIb atoms include boron (B), aluminum (Al), gallium (Ga), indium (In), and thallium (Tl). In particular, B, Al, and Ga are preferred. It is suitable. Group Vb atoms include:
Specifically, phosphorus (P), arsenic (As), antimony (S
b), bismuth (Bi) and the like, and P and As are particularly preferable.

Control of conductivity contained in surface layer 1104
The content of the atoms to be^-3~ 1
× 10^Three Atomic ppm, more preferably 1 × 10^-2~ 5x
10 ^Two Atomic ppm, optimally 1 × 10^-1~ 1 × 10^Two original
Parts per million. Atoms controlling conductivity, for example IIIb
To structurally introduce a group V atom or a group Vb atom,
In forming the layer, a raw material for introducing a group IIIb atom or
Raw material for introducing group Vb atoms in a gaseous state in a reaction vessel
In addition, the gas is introduced together with another gas for forming the surface layer 1104.
You just need to enter. Raw material for introducing Group IIIb atoms
Or a source material for introducing a group Vb atom.
Gaseous at room temperature and pressure, or at least
It is desirable to adopt one that can be easily gasified under the circumstances.
No. As such a raw material for introducing a group IIIb atom,
Specifically, for boron atom introduction, B_Two H₆ , B_Four 
H_Ten, B_Five H₉ , B_Five H₁₁, B₆ H_Ten, B₆ H₁₂, B₆ 
H₁₄Borohydride, BF_Three , BCl_Three , BBr_Three Etc.
Boron halide and the like. In addition, AlCl_Three ,
GaCl_Three , Ga (CH_Three )_Three , InCl_Three , TlCl
_Three And the like.

As a raw material for introducing a group Vb atom, those which can be effectively used include those of PH ₃ , P
Phosphorus hydride such as ₂ H ₄ , PH ₄ I, PF ₃ , PF ₅ , PC
and phosphorus halides such as l ₃ , PCl ₅ , PBr ₃ , PBr ₅ and PI ₃ . In addition, AsH ₃ , AsF ₃ ,
AsCl ₃ , AsBr ₃ , AsF ₅ , SbH ₃ , SbF
_{3, SbF 5, SbCl 3,} SbCl 5, BiH 3, B
iCl ₃ , BiBr _{3 and the} like can also be mentioned as effective starting materials for introducing a group Vb atom.

Further, these raw materials for introducing atoms for controlling conductivity may be diluted with a gas such as H ₂ , He, Ar, Ne or the like, if necessary.

The thickness of the surface layer 1104 is usually 0.1 mm.
It is desirably 0.1 to 1 μm, preferably 0.05 to 2 μm, and most preferably 0.1 to 1 μm. If the thickness is less than 0.01 μm, the surface layer is lost due to abrasion or the like during use of the photoreceptor, and if it exceeds 3 μm, the electrophotographic characteristics such as an increase in residual potential are reduced.

The surface layer 1104 is carefully formed so as to obtain the required characteristics as desired. That is, Si, C and / or N and / or O, H and / or
Or, the surface layer containing halogen as a component, structurally takes a form from crystalline to amorphous depending on the formation conditions, and electrical properties include properties from conductivity to semiconductivity, insulation, Since each property between the photoconductive property and the non-photoconductive property is shown, in the present invention,
The formation conditions are strictly selected so that a compound having desired properties according to the purpose is formed.

For example, in order to provide the surface layer 1104 mainly for the purpose of improving the pressure resistance, the surface layer 1104 is formed as a non-single-crystal material having a remarkable electric insulating property in a use environment.

In the case where the surface layer 1104 is provided for the purpose of mainly improving the continuous repetitive use characteristics and the use environment characteristics, the above-mentioned degree of electrical insulation is relaxed to some extent, and the sensitivity to irradiation light is increased to some extent. Is formed as a non-single-crystal material having

Further, in the charging mechanism according to the present invention, in order to prevent the image flow due to the low resistance of the surface layer, or to prevent the influence of the residual potential, etc. When making, the resistance value is 1
It is preferable to appropriately control so as to be × 10 ¹⁰ to 1 × ¹⁵ Ωcm.

In order to form the surface layer 1104 having characteristics capable of achieving the object of the present invention, the temperature of the support
It is necessary to appropriately set the gas pressure in the reaction vessel.

The temperature (Ts) of the support 1101 is appropriately selected in an optimum range according to the layer design, but is preferably 200 to 350 ° C., more preferably 230 to 330 ° C.
Optimally, the temperature is desirably 250 to 300 ° C.

The gas pressure in the reaction vessel was similarly designed in layers.
Therefore, the optimal range is selected as appropriate,
Or 1 × 10^-Four-10 Torr, more preferably 5 ×
10 ^-Four~ 5 Torr, optimally 1 × 10^-3~ 1 Torr
It is preferred that

In the present invention, the above-mentioned ranges may be mentioned as the preferable numerical ranges of the temperature of the support and the gas pressure for forming the surface layer. However, the conditions are not usually determined separately and independently. It is desirable to determine the optimum value based on mutual and organic relationships to form a photoreceptor having characteristics.

Further, in the present invention, it is also possible to provide a blocking layer (lower surface layer) having a lower content of carbon atoms, oxygen atoms and nitrogen atoms than the surface layer between the photoconductive layer and the surface layer. It is effective to further improve the characteristics of.

A region may be provided between the surface layer 1104 and the photoconductive layer 1103 in which the content of carbon atoms and / or oxygen atoms and / or nitrogen atoms changes so as to decrease toward the photoconductive layer 1103. Good. Thereby, the adhesion between the surface layer and the photoconductive layer can be improved, and the influence of interference due to light reflection at the interface can be further reduced.

In the photoreceptor for an image forming apparatus used in the present invention, a charge injection blocking layer which functions to prevent charge injection from the conductive support side is provided between the conductive support and the photoconductive layer. Is even more effective. That is, the charge injection blocking layer has a function of preventing charge from being injected from the support side to the photoconductive layer side when the photosensitive layer is subjected to a charging treatment of a fixed polarity on its free surface. Such a function is not exhibited when it is subjected to a charging treatment, that is, it has a polarity dependency. In order to provide such a function, the charge injection blocking layer contains a relatively large number of atoms for controlling conductivity as compared with the photoconductive layer.

The atoms for controlling the conductivity contained in the layer may be distributed evenly and uniformly in the layer, or may be uniformly distributed in the thickness direction of the layer, Some portions may be contained in a state of being uniformly distributed. When the distribution concentration is non-uniform, it is preferable that the compound be contained so as to be distributed more on the support side.

However, in any case, it is necessary that the metal is uniformly contained in a uniform distribution in the in-plane direction parallel to the surface of the support from the viewpoint of making the characteristics in the in-plane direction uniform. .

As the atoms for controlling the conductivity contained in the charge injection blocking layer, there can be mentioned so-called impurities in the field of semiconductors, and the Group IIIb atoms of the periodic table giving the p-type conductivity or the n-type conductivity. Of the periodic table that gives
Group b atoms can be used.

As the Group IIIb atom, specifically, B
(Boron), Al (aluminum), Ga (gallium), In (indium), Ta (thallium), and the like, and B, Al, and Ga are particularly preferable. Specific examples of group Vb atoms include P (phosphorus), As (arsenic), and Sb.
(Antimony), Bi (bismuth) and the like.
As is preferred.

The content of atoms for controlling conductivity contained in the charge injection blocking layer is appropriately determined as desired so that the object of the present invention can be effectively achieved.
It is preferably 10 to 1 × 10 ⁴ atomic ppm, more preferably 50 to 5 × 10 ³ atomic ppm, and most preferably 1 × 10 ² to 1 ppm.
It is desirably set to × 10 ³ atomic ppm.

Further, by including at least one of carbon atoms, nitrogen atoms and oxygen atoms in the charge injection blocking layer, the adhesion to other layers provided in direct contact with the charge injection blocking layer is improved. Can be done.

The carbon atoms, nitrogen atoms or oxygen atoms contained in the layer may be uniformly distributed in the layer, or may be contained evenly in the thickness direction of the layer. Some portions may be contained in a non-uniformly distributed state. However, in any case, it is necessary to be uniformly contained in the in-plane direction parallel to the surface of the support from the viewpoint of making the characteristics uniform in the in-plane direction.

The content of carbon atoms and / or nitrogen atoms and / or oxygen atoms contained in the entire region of the charge injection blocking layer in the present invention is appropriately determined so that the object of the present invention can be effectively achieved. In the case of one kind, the amount is preferably used, and in the case of two or more kinds, the total is preferably 1 × 10 ⁻³ to 50 at%, more preferably 5 × 10 ^−3.
-3 to 30 at%, optimally 1 × 10 ^-2 to 10 at% is desirable.

The hydrogen atoms and / or halogen atoms contained in the charge injection blocking layer in the present invention have the effect of compensating for dangling bonds present in the layer and improving the film quality.
The content of hydrogen atoms or halogen atoms or the sum of hydrogen atoms and halogen atoms in the charge injection blocking layer is preferably 1
It is desirable that the content be 5 to 50 atomic%, more preferably 5 to 40 atomic%, most preferably 10 to 30 atomic%.

The thickness of the charge injection blocking layer is preferably from 0.1 to 5 in consideration of desired electrophotographic characteristics and economic effects.
μm, more preferably 0.3-4 μm, optimally 0.5
It is desirable that the thickness be about 3 μm.

In the present invention, to form the charge injection blocking layer, a vacuum deposition method similar to the above-described method of forming the photoconductive layer is employed.

To form the charge injection blocking layer 105 having characteristics capable of achieving the object of the present invention, the photoconductive layer 1103
Similarly to the above, it is necessary to appropriately set the mixing ratio between the gas for supplying Si and the diluent gas, the gas pressure in the reaction vessel, the discharge power, and the temperature of the support 1101.

The flow rate of the diluent gas H ₂ and / or He is appropriately selected in accordance with the layer design, but the H ₂ and / or He is usually 1 to 20 times the Si supply gas. Preferably 3 to 15 times, optimally 5 to 1
It is desirable to control to a range of 0 times.

Similarly, the optimum range of the gas pressure in the reaction vessel is appropriately selected according to the layer design.
0 ^{-4 to} 10 Torr, preferably 5 × 10 ^{-4 to} 5 Torr
r, and most preferably, 1 × 10 ^{−3 to} 1 Torr.

Similarly, the optimum range of the discharge power is appropriately selected in accordance with the layer design. However, the discharge power relative to the flow rate of the gas for supplying Si is usually 1 to 7 times, preferably 2 to 6 times. Is preferably set in a range of 3 to 5 times.

Further, the temperature of the support 1101 is appropriately selected in an optimum range according to the layer design. In the ordinary case, the temperature is preferably 200 to 350 ° C., more preferably 23 ° C.
The temperature is desirably 0 to 330 ° C, optimally 250 to 300 ° C.

In the present invention, desirable ranges of the mixing ratio of the diluent gas, the gas pressure, the discharge power, and the temperature of the support for forming the charge injection blocking layer include the above-mentioned ranges. Is usually not independently determined separately, but it is desirable to determine an optimum value of each layer forming factor based on mutual and organic relations to form a surface layer having desired properties.

In addition, in the photosensitive member for an image forming apparatus used in the present invention, the support 110 of the photosensitive layer 1102
On one side, at least aluminum atom, silicon atom,
It is desirable to have a layer region containing hydrogen atoms and / or halogen atoms in a non-uniform distribution in the layer thickness direction.

The support 11 of the photosensitive member for an image forming apparatus
01 and photoconductive layer 1103 or charge injection blocking layer 110
For the purpose of further improving the adhesiveness between the first and second substrates, for example, Si ₃ N ₄ , SiO ₂ , SiO, or silicon atoms are used as a base, and hydrogen atoms and / or halogen atoms, and carbon atoms and / or oxygen An adhesion layer formed of an amorphous material containing atoms and / or nitrogen atoms may be provided. Further, as described above, a light absorbing layer for preventing the generation of an interference pattern due to light reflected from the support may be provided.

Next, an apparatus for forming a photosensitive layer and a film forming method will be described in detail.

FIG. 2 is a schematic diagram showing an example of an apparatus for manufacturing a photosensitive member for an image forming apparatus by a high-frequency plasma CVD method (hereinafter abbreviated as “RF-PCVD”) using an RF band as a power supply frequency. . The configuration of the manufacturing apparatus shown in FIG. 2 is as follows.

This apparatus is roughly classified into a deposition apparatus 210
0, a source gas supply device 2200, and an exhaust device (not shown) for reducing the pressure inside the reaction vessel 2111. A cylindrical support 2112 and a heater 211 for heating the support are provided in a reaction vessel 2111 in the deposition apparatus 2100.
3. A source gas introduction pipe 2114 is installed, and a high frequency matching box 2115 is connected.

The raw material gas supply device 2200 includes SiH ₄ ,
Cylinders 2221 to 2226 and valves 2231 to 22 for source gases such as GeH ₄ , H ₂ , CH ₄ , B ₂ H ₆ , and PH _3.
36, 2224 to 2246, 2251 to 2256, and mass flow controllers 2211 to 2216. A cylinder for each source gas is connected to a gas introduction pipe 2114 in a reaction vessel 2111 via a valve 2260.

The formation of a deposited film using this apparatus can be performed, for example, as follows.

First, the cylindrical support 2112 is set in the reaction vessel 2111, and the inside of the reaction vessel 2111 is evacuated by an exhaust device (not shown) such as a (vacuum pump). Subsequently, the cylindrical support 21 is heated by the support heating heater 2113.
The temperature of No. 12 is controlled to a predetermined temperature of 200 ° C. to 350 ° C.

The source gas for forming the deposited film is supplied to the reaction vessel 211.
In order to make the gas flow into the valve 1, the gas cylinder valves 2231 to 2231
236, confirming that the leak valve 2117 of the reaction vessel is closed, and checking the inflow valves 2241 to 224
6. Outflow valves 2251-2256, auxiliary valve 226
Make sure that the main valve 2 is open.
118 to open the reaction vessel 2111 and the gas pipe 2116
Exhaust the inside.

Next, the reading of the vacuum gauge 2119 is about 5 × 10 ^−6.
When reaching Torr, the auxiliary valve 2260 and the outflow valves 2251 to 2256 are closed.

After that, each gas is introduced from the gas cylinders 2221-2226 by opening the valves 2231-2236.
Each gas pressure is adjusted to 2kg by pressure regulators 2261 to 2266.
/ Cm ² . Next, the inflow valves 2241 to 224
6 is gradually opened, and each gas is introduced into the mass flow controllers 2211 to 2216.

After preparation for film formation is completed as described above, each layer is formed by the following procedure.

When the cylindrical support 2112 reaches a predetermined temperature, necessary ones of the outflow valves 2251 to 2256 and the auxiliary valve 2260 are gradually opened, and a predetermined gas is supplied from the gas cylinders 2221 to 2226 to the gas introduction pipe 21.
Introduced into the reaction vessel 2111 via. Next, each source gas is adjusted by the mass flow controllers 2211 to 2216 so as to have a predetermined flow rate. At this time, the main valve 2 is monitored while watching the vacuum gauge 2119 so that the pressure in the reaction vessel 2111 becomes a predetermined pressure of 1 Torr or less.
Adjust the 118 opening. When the internal pressure is stabilized, an RF power source (not shown) having a frequency of 13.56 MHz is set to a desired power, and RF power is introduced into the reaction vessel 3111 through the high-frequency matching box 2115 to generate glow discharge. The raw material gas introduced into the reaction vessel is decomposed by the discharge energy, and the cylindrical support 21
The deposited film mainly containing predetermined silicon is formed on the substrate 12. After the desired thickness is formed, R
The supply of the F power is stopped, the outflow valve is closed, the flow of gas into the reaction vessel is stopped, and the formation of the deposited film is completed.

By repeating the same operation a plurality of times, a light receiving layer having a desired multilayer structure is formed.

When forming each layer, all the outflow valves other than the necessary gas are closed. Further, each gas flows into the reaction vessel 2111 and the outflow valves 2251 to
An operation of closing the outflow valves 2251 to 2256, opening the auxiliary valve 2260, and further fully opening the main valve 2118 to temporarily exhaust the system to a high vacuum in order to avoid remaining in the pipe from the 2256 to the reaction vessel 2111. Perform as necessary.

In order to make the film formation uniform, it is also effective to rotate the support 2112 at a predetermined speed by a driving device (not shown) during the layer formation.

Further, the above-mentioned gas types and valve operations can be appropriately changed according to the conditions for forming each layer.

Next, a description will be given of a method of manufacturing an image forming application photosensitive member formed by a high frequency plasma CVD method (hereinafter abbreviated as "VFH-PCVD") using a VHF band frequency as a power supply.

The part of the deposition apparatus 2100 shown in FIG. 2 is replaced with the deposition apparatus 3100 shown in FIG.
By connecting to 0, a photoconductor manufacturing apparatus for an image forming apparatus by a VHF-PCVD method can be obtained.

This apparatus is broadly composed of a reaction vessel 3111 having a vacuum-tight structure, a source gas supply apparatus 2200, and an exhaust device (not shown) for reducing the pressure inside the reaction vessel. Inside the reaction vessel 3111, a cylindrical support 3112, a heater 3113 for heating the support, a raw material gas introduction pipe (not shown), and an electrode 3115 are provided, and a high frequency matching box 3116 is further connected to the electrode. The inside of the reaction vessel 3111 is connected to a diffusion pump (not shown) through an exhaust pipe 3121.

The raw material gas supply device 2200 includes SiH ₄ ,
Gas cylinders 2221 to 2226 and valves 2231 to 22 for source gases such as GeH ₄ , H ₂ , CH ₄ , B ₂ H ₆ , and PH _3.
36, 2224 to 2246, 2251 to 2256, and mass flow controllers 2211 to 2216, and a cylinder for each source gas is connected to a gas introduction pipe (not shown) in the reaction vessel 3111 via a valve 2260. The space 3130 surrounded by the cylindrical support 3112 forms a discharge space.

The formation of a deposited film in this apparatus by the VHF-PCVD method can be performed as follows.

First, a cylindrical support 3112 is set in a reaction vessel 3111, and
The reactor 112 is rotated, and the inside of the reaction vessel 3111 is evacuated via an exhaust pipe 3121 by an unillustrated exhaust device (for example, a vacuum pump), and the pressure inside the reaction vessel 3111 is reduced to 1 × 10 ⁻⁷ To.
Adjust to rr or less. Subsequently, the heater for heating the support 3
113 heats and holds the temperature of the cylindrical support 3112 at a predetermined temperature of 200 ° C. to 350 ° C.

The source gas for forming the deposited film is supplied to the reaction vessel 311.
In order to make the gas flow into the valve 1, the gas cylinder valves 2231 to 2231
236, make sure that the leak valve (not shown) of the reaction vessel is closed,
46, outflow valves 2251 to 2256, auxiliary valve 22
After confirming that 60 is open, first, the main valve (not shown) is opened to exhaust the inside of the reaction vessel 3111 and the gas pipe (not shown).

Next, the reading of a vacuum gauge (not shown) was about 5 × 10
^{When the} pressure reaches ^-6 Torr, the auxiliary valve 2260 and the outflow valves 2251 to 2256 are closed.

Thereafter, each gas is introduced from the gas cylinders 2221 to 2226 by opening the valves 2231 to 2236.
Each gas pressure is adjusted to 2kg by pressure regulators 2261 to 2266.
/ Cm ² . Next, the inflow valves 2241 to 224
6 is gradually opened, and each gas is introduced into the mass flow controllers 2211 to 2216.

After the preparation for film formation is completed as described above, each layer is formed on the cylindrical support 3115 as follows.

When the temperature of the cylindrical support 3112 reaches a predetermined temperature, necessary ones of the outflow valves 2251 to 2256 and the auxiliary valve 2260 are gradually opened, and a predetermined gas is supplied from the gas cylinders 2221 to 2226 to the gas introduction pipe (not shown). Discharge space 3130 in the reaction vessel 3111
To be introduced. Next, the mass flow controllers 2211 to 2211
According to 2216), each source gas is adjusted so as to have a predetermined flow rate. At this time, the pressure in the discharge space 3130 is 1 T
Vacuum gauge (not shown) so as to maintain a predetermined pressure of orr or less
And adjust the opening of the main valve (not shown).

When the pressure is stabilized, for example, the frequency 5
A VHF power supply (not shown) of 00 MHz is set to a desired power, and a discharge space 3 is set through a matching box 3116.
VHF power is introduced into 130 to cause glow discharge. Thus, in the discharge space 3130 surrounded by the support 3112, the introduced source gas is excited by the discharge energy and dissociated, and a predetermined deposited film is formed on the cylindrical support 3112. At this time, in order to achieve uniform layer formation, the support rotating motor 3120 provides:
Rotate at the desired rotational speed.

After the desired film thickness is formed, the supply of VHF power is stopped, the outflow valve is closed to stop the gas from flowing into the reaction vessel, and the formation of the deposited film is completed.

By repeating the same operation a plurality of times, a desired photosensitive layer having a multilayer structure is formed.

When forming each layer, all the outflow valves other than the necessary gas are closed. In addition, each gas flows into the reaction vessel 3111 and the outflow valves 2251 to
In order to avoid remaining in the piping from 2256 to the reaction vessel 3111, the outflow valves 2251 to 2256 are closed, the auxiliary valve 2260 is opened, and the main valve (not shown) is fully opened to once make the inside of the system a high vacuum. Perform the exhausting operation as needed.

It goes without saying that the above-mentioned gas types and valve operations are changed according to the conditions for forming each layer.

In any of the methods, the temperature of the support during the formation of the deposited film is in particular 200 ° C. to 350 ° C., preferably 230 ° C. to 330 ° C., more preferably 250 ° C. or less.
The temperature is preferably from 300C to 300C.

The heater for heating the support may be a heating element having a vacuum specification, and more specifically, an electric resistance heating element such as a winding heater of a sheath-shaped heater, a plate-shaped heater, a ceramic heater, a halogen lamp, and an infrared ray. Examples of the heating element include a heat radiation lamp heating element such as a lamp, and a heating element using a heat exchange unit as a heating medium such as a liquid or a gas. As the surface material of the heating means, metals such as stainless steel, nickel, aluminum, and copper, ceramics, heat-resistant polymer resins, and the like can be used.

In addition, a method is also used in which a vessel dedicated to heating is provided in addition to the reaction vessel, and after heating, the support is transferred into the reaction vessel in a vacuum.

Further, the pressure in the discharge space in the VHF-PCVD method is preferably 1 mTorr or more and 500 mTo
rr or less, more preferably 3 mTorr or more and 300 mT
orr, most preferably 5 mTorr to 100 m
It is desirable to set it to Torr or less.

In the VHF-PCVD method, the size and shape of the electrodes provided in the discharge space may be any as long as they do not disturb the discharge.
A cylindrical shape of 0 cm or less is preferred. At this time, the length of the electrode can be arbitrarily set as long as the electric field is uniformly applied to the support.

The electrode may be made of any material as long as its surface becomes conductive. For example, stainless steel, A
1, Cr, Mo, Au, In, Nb, Te, V, Ti,
Metals such as Pt, Pb, and Fe, alloys thereof, and glass, ceramics, plastics, and the like, whose surfaces are subjected to conductive treatment, are usually used.

By using the means and actions for solving the problems described above singly or in combination, it is possible to obtain excellent effects.

[0202]

EXAMPLES The effects of the present invention will be specifically described below with reference to examples. Note that the present invention is not limited to these examples.

REFERENCE EXAMPLE A charge injection device layer, a photoconductive layer, and a surface layer were formed on a mirror-finished aluminum cylinder having a diameter of 108 mm by using an RF-PCVD manufacturing apparatus shown in FIG. A photoreceptor was made. The conditions for forming the charge injection element layer and the surface layer are shown in Table 1 in the following examples.
Are the same as those described in the above, but the conditions for forming the photoconductive layer are S
It was produced by changing the mixing ratio of iH ₄ and H ₂ and the discharge power.

The prepared photoreceptor was set in an image forming apparatus (NP6060 manufactured by Canon Inc. was modified for testing), and the temperature dependency (temperature characteristics) of the charging ability, the optical memory, the image deletion, and the halftone density unevenness of the image ( (Gasatsuki) was evaluated.

The temperature characteristic is such that the temperature of the photoreceptor is changed from room temperature to about 4 degrees.
The charging ability was measured by changing the temperature up to 5 ° C., and the change in charging ability per 1 ° C. temperature was measured, and 2 V / deg or less was determined to be acceptable. Optical memory, image deletion and image roughness were determined by visual inspection of the image, 1: very good, 2:
Good 3: no problem in practical use 4: slightly difficult in practical use 4
Ranked into stages.

On the other hand, a glass substrate (Corning 7059) and a Si wafer were placed on a cylindrical sample holder, and a film thickness of about 1 μm was formed on each of them under the conditions for forming a photoconductive layer.
m-a-Si films were deposited. An Al skewer electrode is deposited on the deposited film on the glass substrate, and the characteristic energy (Eu) of the tail of the exponential function and the localized level density (DOS) are measured by CPM. The deposited film on the Si wafer is FTIR. (Fourier transform infrared absorption spectrum) shows hydrogen content and Si-H
_{The 2} / Si-H ratio was determined.

FIG. 7 shows the relationship between Eu and temperature characteristics at this time.
In, Figure 8 the relation between DOS and optical memory, the relationship between the DOS and the image flow in FIG 9 shows the relationship between Si-H ₂ / Si-H and coarseness in FIG. All samples had a hydrogen content between 10 and 30 atomic%.

It is clear from FIGS. 7 to 10 that the range of Eu is 50 to 60 meV, and the range of DOS is 1 × 10 ^{14 to} 1 ×.
Less than 10 ¹⁶ cm ^-3 , and a Si-H ₂ / Si-H ratio of 0.2 to
It has been found that setting the value to 0.5 is preferable for obtaining good electrophotographic characteristics.

[Example 1] [0209] Based on the knowledge obtained from the above reference example, Table 1 was applied to a mirror-finished aluminum cylinder having a diameter of 108 mm using the RF-PCVD manufacturing apparatus shown in FIG. A photoreceptor comprising a charge injection element layer, a photoconductive layer, and a surface layer was prepared under the following conditions.

[0210]

[Table 1] The obtained photoreceptor had the following characteristics. (1) Photoconductive layer Hydrogen content: 20 atomic% SiH ₂ / SiH ratio: 0.3 Characteristic energy of exponential function tail: 55 meV Localized state density: 2 × 10 ¹⁵ cm ⁻³ (2) Surface layer electric resistance : 5 × 10 ¹³ Ωcm The prepared photoreceptor was used as an image forming apparatus (NP606, manufactured by Canon Inc.).
0 is modified for testing), the primary current value is adjusted so that the potential at the center position becomes 400 V using a conventional charger (without grid) in which the shape of the shield plate does not change. Potential unevenness was measured.

Next, in place of the charger in which the shape of the shield plate does not change, a charger with a grid (the shape of the shield plate does not change) and the charger having a variable shield plate shape of the present invention are used. The value was evaluated. The shape of the shield plate of the charger of the present invention is as shown in FIG. 1b), the distance (d) between the charging wire and the photoconductor is 9 mm, and the fixed portion of the shield plate is the connection between the fixed portion and the movable portion. The one having a distance (L) to the position in the range of 3 mm to 5 mm (L at the center is 5 mm and L at the end is 3 mm), and the movable part used was one that can move 4 mm at both ends. Table 2 shows the results
Shown in In the table, when a charger with "gridless shield plate and no variable" was used, the portion of the photoconductor in which the potential unevenness shown in the left column occurred was "gridless shield plate and no variable".
And the non-uniformity shown when using the charger of "Variable shield plate without grid (the present invention)".

Although the unevenness tends to be reduced by inserting the grid, it can be seen that the unevenness is particularly improved when the charger of the present invention is used. In particular, the effect of the present invention became remarkable as unevenness increased.

[0213]

[Table 2] Example 2 Using the image forming apparatus created in Example 1,
The stability of the charger was investigated. The charger used is the one shown in Fig. 5-a) (the whole is movable), the distance between the charging wire and the photoconductor is 9mm, and it is movable from the position facing the charging wire on the fixed part of the shield plate. The distance L1 from the inner surface of the fixed portion of the connection portion with the portion to the end of the flat portion was changed. The results are shown in Table 3.

[0214]

[Table 3] As is evident from Table 3, when L1 was 2/10 × d or more, no problem such as leakage occurred, and the result was good.

Example 3 Using the photosensitive member and the image forming apparatus prepared in Example 1, the unevenness of the photosensitive member was measured using the charger used in Example 2. In this case, the value of the unevenness is 1 from the value of the unevenness measured by the conventional charger without the variable shield plate.
Evaluation was made on a three-point scale, in which a sample of less than / 2 was A, a sample of less than 2/3 was B, and a sample of 2/3 or more was C. The results are shown in Table 4.

[0216]

[Table 4] From Table 4, when L2 is small, due to instability of discharge,
The effect of potential unevenness improvement was hard to appear. Also. When L2 was large, the uneven shape could not be improved even if the movable part was changed. This is considered to be due to the fact that, since the movable portion is far from the wire, the charging current cannot be changed efficiently, resulting in poor responsiveness.

Therefore, from Examples 2 and 3, 2/10 × d ≦ L1 <L2 ≦ 8/10 × d to stabilize the charger and improve the potential unevenness. It has been confirmed that it is desirable to satisfy the condition (1).

[Embodiment 4] Using the image forming apparatus used in Embodiment 1, the evaluation of the potential and the evaluation of the image were performed on the photoreceptor of Embodiment 2. The process speed was 300 mm / s, and the diameter of the photoconductor was 108 mm. Fig.1-b)
A variable shield plate as shown in FIG. The charger width is 25mm, the distance between the charging wire and the drum is 10mm,
The distance (L) between the fixed part of the shield plate and the connection part of the movable part was 4 mm (constant in the axial direction), and the movable part of the shield plate was adjustable within a range of 5 mm to 9 mm from the distance to the opening end. . Under this condition, the potential unevenness was measured by the image forming apparatus, and the movable portion of the shield plate was adjusted so that the potential unevenness was minimized. As a result, a sufficient charging potential was obtained, and the unevenness was good for both the potential and the image.

[Embodiment 5] Using the image forming apparatus used in Embodiment 1, the evaluation of the potential and the evaluation of the image were performed on the photoreceptor of Embodiment 2. The process speed was 400 mm / s, the width of the charger was 30 mm, and the diameter of the photoreceptor was 80 mm. As the charger, a variable shield plate as shown in FIG. 1-b) was used. The width of the charger is 25 mm, the distance between the charging wire and the drum is 10 mm, the distance (L) between the fixed part of the shield plate and the connecting part of the movable part is 6 mm (constant in the axial direction), and the movable part of the shield plate is at the opening end. Distance from 7mm to 9mm
Adjustable in the range described above was used. Under this condition, the potential unevenness was measured by the image forming apparatus, and the movable portion of the shield plate was adjusted so that the potential unevenness was minimized. As a result, a sufficient charging potential was obtained, and the unevenness was good for both the potential and the image.

[Embodiment 6] The charger used in Embodiment 1 was taken out, replaced with one shield plate having the same shape and no movable portion, and the same evaluation as in Embodiment 4 was performed. The potential was obtained, and the unevenness was good for both the potential and the image.

[Embodiment 7] Using the image forming apparatus used in Embodiment 1, the evaluation of the potential and the evaluation of the image were performed on the photoreceptor of Embodiment 2. The process speed was 500 mm / s, the charger width was 30 mm, and the diameter of the photoconductor was 80 mm. As shown in FIG. 6B, the charger was provided with an insulator capable of changing its shape inside the shield plate. The potential unevenness was measured by the image forming apparatus, and the shield plate was adjusted so that the potential unevenness was minimized. As a result, a sufficient charging potential was obtained, and the unevenness was good for both the potential and the image.

[0222]

According to the present invention, with the demand for higher speed, miniaturization, and multi-function of the electrophotographic apparatus, the photoreceptor moves inside the charger by reducing the size of the charger and increasing the process speed. A charger capable of efficiently and uniformly obtaining a high charge on the surface of a photoreceptor while comprehensively improving electrophotographic physical properties, mechanical durability, and the like even when the passage time is short, and an electronic device using the same. A photographic device can be provided. In addition, even when a photosensitive member having particularly large unevenness is used, the occurrence of potential unevenness can be suppressed, and a good image can be obtained.

[Brief description of the drawings]

FIG. 1a is a schematic configuration diagram for explaining the configuration of a charger and a photoreceptor of the present invention. b) is a view showing a shield plate constituting the charger of the present invention.

FIG. 2 is an example of an apparatus for forming a photoreceptor for an image forming apparatus used in the present invention, and is a schematic explanatory view of an apparatus for manufacturing a photoreceptor for an image forming apparatus by a glow discharge method using a high frequency in an RF band. It is.

FIG. 3 is an example of an apparatus for forming a photoreceptor for an image forming apparatus used in the present invention, and is a schematic explanatory view of an apparatus for manufacturing a photoreceptor for an image forming apparatus by a glow discharge method using VHF band high frequency. It is.

FIG. 4 is an explanatory diagram showing an image forming process of a copying machine using an a-Si photosensitive member.

FIG. 5 is a schematic configuration diagram for explaining an arrangement of the charger of the present invention, and shows a positional relationship among a charger, a charging wire, a shield plate (fixed portion, movable portion), and a photoconductor. a) It is explanatory drawing in the case of one charging wire. b) It is explanatory drawing at the time of using two charging wires.

FIG. 6 is a schematic configuration diagram for explaining the arrangement of the charger of the present invention, showing the positional relationship among the charger, a charging wire, a shield plate, a movable insulator, and a photosensitive member. a) It is explanatory drawing in the case of one charging wire. b) It is explanatory drawing at the time of using two charging wires.

FIG. 7 shows the characteristic energy (E) of the Urbach tail of the photoconductive layer in the photoconductor for an image forming apparatus used in the present invention.
It is a figure which shows the relationship between u) and a temperature characteristic.

FIG. 8 is a diagram showing the relationship between the local density of state (DOS) of the photoconductive layer and the optical memory in the photoreceptor for an image forming apparatus used in the present invention.

FIG. 9 is a view showing the relationship between the local density of state (DOS) of the photoconductive layer and the image deletion in the photosensitive member for an image forming apparatus used in the present invention.

FIG. 10 is a graph showing a relationship between an absorption peak intensity ratio of a Si—H ₂ bond of a photoconductive layer and halftone density unevenness (roughness) in a photoconductor for an image forming apparatus used in the present invention.

FIG. 11 is a schematic configuration diagram illustrating a layer configuration of a photoconductor for an image forming apparatus used in the present invention.

[Explanation of symbols]

 101, 401, 501, 601 a-Si photosensitive member 102, 402, 502, 602 Main charger 104, 504, 604 Charging wire 120 Shield plate 121, 521, 621 Shield plate fixing part 122, 522 Shield plate movable part 403 Static Electrostatic latent image forming portion 405 Developing device 406 Transfer paper supply system 407a) Transfer charger 407b) Separation charger 409 Cleaner 410 Transport system 411 Static elimination light source 622 Insulating member 1100 Photoconductor 1101 Support 1102 Photosensitive layer 1103 Photoconductive layer 1104 Surface layer 1105 Charge injection blocking layer 1106 Charge generation layer 1107 Charge transport layer 1110 Free surface 2100,3100 Deposition device 2111,3111 Reaction vessel 2112,3112 Cylindrical support 2113,3113 Support heating heater 2114 Source gas Inlet pipes 2115, 3116 Matching box 2116 Source gas pipe 2117 Reaction vessel leak valve 2118 Main exhaust valve 2119 Vacuum gauge 2200 Source gas supply device 2211-2216 Mass flow controller 2221-2236 Source gas cylinder 2231-2236 Source gas cylinder valve 2224-2246 Gas inflow valve 2251 to 2256 Gas outflow valve 2261 to 2266 Pressure regulator 3115 Electrode 3120 Support rotating motor 3121 Exhaust pipe 3130 Discharge space

Claims (8)

[Claims] 1. A charging device for charging a photoconductor for an image forming apparatus, comprising: a charging wire disposed substantially parallel to the photoconductor; and an opening at a position facing the photoconductor. A conductive 2 that surrounds the wire and is substantially parallel to the charged wire;
And a shield member comprising a plurality of shield plates and a member surrounding the periphery, wherein the opening is a slit-shaped opening formed between the two shield plates, and a charging current flowing from the charging wire to the photosensitive member. Is configured to change along the generatrix direction of the photoconductor. 2. The charger according to claim 1, wherein an effective shield distance of at least one of the shield plates is changed along a generatrix direction of the photoconductor. (However, the shield effective distance of the shield plate means a distance that effectively functions as a shield plate in a direction toward the photoconductor from a leg of a perpendicular line dropped on the shield plate from a certain point of the charging wire.) 3. The shield effective distance is changed along the generatrix direction of the photoconductor by changing the distance to at least one edge of the opening of the shield plate along the generatrix direction of the photoconductor. 3. The charger according to claim 2, wherein:
(However, the distance from the opening end of the shield plate to the end of the opening in the direction toward the photoreceptor is from the point of the perpendicular wire dropped on the shield plate from a certain point of the charging wire.) 4. A method according to claim 1, wherein at least one of said shield plates is constituted by a combination of at least two conductive plates each comprising a fixed portion and a movable portion, and said movable portion is moved to move to said opening end. 3. The charging device according to claim 2, wherein the value of can be changed along the generatrix direction of the photoconductor. 5. The distance (L) between a connection point of the fixed part and the movable part satisfies (Equation 1) 2/10 × d ≦ L ≦ 8/10 × d. The charger described.
(However, the distance (L) from the fixed part to the connecting part of the movable part
Is the distance from the foot of the perpendicular drawn down on the shield plate from a certain point of the charging wire to the end of the fixed part in the direction of the photoconductor, and d is the distance between the charging wire and the photoconductor. ) 6. A movable insulator covering said surface is disposed on at least one inner surface of said shield plate, and by moving said insulator, said shield effective distance is increased along a generatrix direction of said photosensitive member. 3. The charger according to claim 2, which can be changed. 7. The photoconductor for an image forming apparatus, comprising: a conductive support; and a photoconductive light comprising a non-single-crystal material containing a silicon atom as a host and a hydrogen atom (or a hydrogen atom and a halogen atom). A photosensitive member for an image forming apparatus, comprising: a conductive layer; and a photosensitive layer having a surface layer having a function of retaining charges made of a non-single-crystal material containing hydrogen atoms and / or halogen atoms based on silicon atoms. Wherein the photoconductive layer contains 10 to 30 atomic% of hydrogen;
H ₂ / Si—H is 0.2 to 0.5, and the characteristic energy of the exponential function tail obtained from the sub-bandgap light absorption spectrum is at least 5 at the light incident portion.
0-60 meV, and 0.45-0.95e below the conduction band edge
Localized density of states at V is 1 × 10 ¹⁴ or more and 1 × 10 ¹⁶ c
m ⁻³ , and the electric resistance value of the surface layer is 1 × 10 ¹⁰ to 1 ×
The charging device according to claim 1, wherein the charging device has a resistivity of ¹⁵ Ωcm. 8. An electrophotographic apparatus using the charger according to claim 1.