JPH1072286A - Device for forming diamond-like carbon thin film - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a device capable of forming diamond thin film having good adhesion to a substrate, high hardness and excellent flatness. SOLUTION: This device is provided with a gas ion source 10 having a thermoelectron emission means 12 and an accelerating electrode 15 for accelerating ions toward a substrate 3, a first bias means 20 for applying a voltage to between the substrate 3 and the accelerating electrode 15 and a second bias means 21 for applying a voltage to between the thermoelectron emission means 12 and the accelerating electrode 15, wherein each of the first and second bias means 20 and 21 is capable of applying the voltage as a function of time.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to an apparatus for forming a diamond-like carbon thin film,
In particular, the present invention relates to a diamond-like carbon thin film forming apparatus using a gas ion source.

[0002]

2. Description of the Related Art Conventionally, molds, tools, sliding members,
A diamond-like carbon (DLC) thin film has been used as a hard coating film for protecting the surface of a recording medium or the like of a magnetic disk device. FIG. 33 is a cross-sectional view of a conventional DLC thin film forming apparatus using microwave plasma disclosed in JP-A-63-185893. In the figure, reference numeral 1 denotes a vacuum chamber for keeping the inside vacuum, 1
Reference numeral 01 denotes a substrate holder for holding the substrate 3 in the vacuum chamber 1;
Is a heater provided on the substrate holder to heat the substrate 3, 103 and 104 are reaction gas inlets for introducing a reaction gas into the vacuum chamber 1, and 102 are for applying microwaves to the vacuum chamber 1. Is an electromagnet for generating a magnetic field in the vacuum chamber 1.

Next, the operation will be described. The substrate 3 is held by the substrate holder 101 in the vacuum chamber 1. Next, the substrate 6 is heated to 300 to 900 ° C. by the heater 6 and the degree of vacuum in the vacuum chamber 1 is reduced to 10 ⁻³ to 10 ⁻⁵ Torr.
To hold. Subsequently, the reaction gas inlets 103 and 104
Supply a reaction gas such as CH ₄ and C ₂ H ₂ into the vacuum chamber 1, apply a magnetic field to the vacuum chamber 1 by the electromagnet 105, and apply a microwave having an output of 300 to 600 W from the waveguide 102. Then, microwave plasma is generated in the vacuum chamber 1, and the excited carbon reaches the substrate 3, thereby forming a DLC thin film on the substrate 3.

[0004]

SUMMARY OF THE INVENTION As described above, diamond-like carbon (D
LC) In the thin film forming apparatus, when the temperature of the base material during the formation of the thin film is lowered in order to prevent thermal deformation and deterioration of the base material, there is a problem that the film quality is deteriorated and the adhesive strength of the film is lowered. . In addition, there is a problem that the surface of the thin film is roughened due to discharge due to charge-up during formation of the DLC thin film which is an insulator. The present invention has been made in order to solve the above problems, and to provide a DLC thin film forming apparatus capable of forming a DLC thin film having good adhesion to a substrate, high hardness, and good flatness. With the goal.

[0005]

A DLC thin film forming apparatus according to the present invention includes a gas ion source having a thermoelectron emitting means and an accelerating electrode for accelerating ions toward a substrate on which a DLC film is formed. And a first bias means capable of applying a voltage to the substrate as a function of time with respect to the acceleration electrode, and a second bias means capable of applying a voltage as a function of time to the thermionic emission means with respect to the acceleration electrode. It is a thing.

Further, the voltage applied to the substrate by the first bias means is a direct current or a time-varying negative voltage. The voltage applied to the base material by the first bias means is a voltage that alternates between positive and negative.

The voltage applied to the thermionic emission means by the second bias means is a direct current or a time-varying positive voltage. The voltage applied to the thermionic emission means by the second bias means is a voltage that alternates between positive and negative.

Further, the voltage alternating between positive and negative has a negative time longer than the positive time. Further, the voltage alternating between positive and negative has a positive time longer than a negative time.

The voltage applied to the substrate by the first bias means and the voltage applied to the thermionic emission means by the second bias means are synchronized with each other.

In addition, a biasing means for applying a voltage to the thermionic emission means as a function of time with respect to the accelerating electrode is provided, and the potential of the substrate is set to the same potential as the accelerating electrode.

[0011]

BEST MODE FOR CARRYING OUT THE INVENTION

Embodiment 1 FIG. FIG. 1 is a cross-sectional view of a diamond-like carbon (DLC) thin film forming apparatus according to a first embodiment of the present invention. In the drawing, reference numeral 1 denotes a vacuum chamber for holding the inside of the vacuum chamber, 2 denotes an exhaust system for evacuating the vacuum chamber 1, and 3 denotes a substrate such as a cemented carbide on which a DLC thin film is formed on the surface. It is held in the vacuum chamber 1 by a holder which is not used. Reference numeral 10 denotes a gas ion source which is provided to face the substrate 3 and generates dissociated carbon and carbon ions, and dissociated hydrogen and hydrogen ions, and 11 internally stores carbon (C) which is a raw material of a DLC thin film. A reaction gas introduction chamber into which a hydrocarbon-based reaction gas containing gas is introduced. The reaction gas introduction chamber is capable of discharging ions and the like, and has an orifice (not shown) so as to increase the flow path resistance and to apply a pressure difference between the reaction chamber and the vacuum chamber 1. ) Is provided in the portion 16 facing the base material 3.

Reference numeral 12 denotes a thermionic emission means provided in the reaction gas introduction chamber 11, and 13 comprises a thin metal wire arranged in parallel in the reaction gas introduction chamber 11. The provided thermoelectron extraction electrode 14 is connected to the reaction gas introduction chamber 11 and a reaction gas introduction pipe for introducing a reaction gas into the reaction gas introduction chamber 11.
An acceleration electrode 15 is provided outside the reaction gas introduction chamber 11 and accelerates ions toward the base material 3. The reaction gas introduction chamber 11, thermionic emission means 12, thermionic extraction electrode 13,
The reaction gas introduction pipe 14 and the acceleration electrode 15 constitute the gas ion source 10.

Reference numeral 20 denotes first bias means for applying a voltage to the base material 3 as a function of time with respect to the acceleration electrode 15.
1 is a second bias means capable of applying a voltage as a function of time to the thermionic emission means 12 to the acceleration electrode 15;
Is a DC power supply for biasing the potential of the thermoelectron extraction electrode 13 in the positive direction with respect to the thermoelectron emission means 12, and 23 is an AC power supply for operating the thermoelectron emission means 12. One end of the acceleration electrode 15 and one end of the first and second bias means 20 and 21 are grounded.

Next, the operation will be described. First, after the inside of the vacuum chamber 1 is evacuated to a degree of vacuum of about 1 × 10 ⁻⁶ Torr by the exhaust system 2, the base material temperature is adjusted to 100 ° C. to 250 ° C. by a base temperature adjusting mechanism (not shown), and the A hydrocarbon-based gas, which is a reactive gas, is introduced from the gas introduction pipe 14 into the reaction gas introduction chamber 11, and the gas is extracted from the thermoelectron extraction electrode 13.
And ejected toward thermionic emission means 12 to reduce the degree of vacuum in the reaction gas introduction chamber 11 to 1 × 10 ⁻² to 1 × 10 ⁻¹ Torr.
Adjust to r. Then, power is supplied from the AC power supply 23 to the thermoelectron emission means 12 and the thermoelectron emission means 12 is heated to about 2000 ° C., so that thermoelectrons can be supplied. Next, a voltage of about 50 to 800 V is applied from the DC power supply 22,
The potential of the thermoelectron extraction electrode 13 is biased in a positive direction with respect to the thermoelectron emission means 12, and the potential of the thermoelectron emission means 12 is 1 to 1.
About 3 A of electrons are emitted toward the thermoelectron extraction electrode 13 as shown by the arrow in the figure. The hydrocarbon-based gas in the reaction gas introduction chamber 11 is excited, dissociated, and ionized by the irradiation of the electrons and the contact with the heated thermionic emission means 12.

At this time, the base material 3 and thermionic emission means 1
2 is applied with a bias voltage. The voltage V1 (t) applied to the substrate 3 by the first bias means 20 and the voltage V2 (t) applied to the thermionic emission means 12 by the second bias means with reference to the potential of the acceleration electrode 15. FIGS. 2 to 5 show such examples. For both V1 (t) and V2 (t), the voltage is within ± several kV, and the frequency is several tens Hz to several tens kHz.
And When V2 (t) is positive, ions (positive charges) can be extracted from the reaction gas introduction chamber 11, and when it is negative, electrons can be extracted. Therefore, by controlling the magnitude of the positive and negative bias voltages and the ratio of the time for applying the positive and negative voltages, the kinetic energy and ion amount of carbon ions and hydrogen ions related to film formation, or the charge-up on the substrate 3 Kinetic energy of electrons and the amount of electrons for neutralizing the electrons can be efficiently controlled. Here, the charge-up will be described. D
Since LC is an insulator, a charge-up phenomenon occurs in which ions become positively charged during film formation. When the charges accumulate, discharge occurs, and the film surface is roughened. To suppress this, electrons are supplied to neutralize the charge and improve the flatness of the film.

Furthermore, the kinetic energy and the amount of ions and electrons extracted from the gas ion source 10 incident on the substrate 3 can be efficiently controlled by V1 (t). That is,
When V1 (t) is negative, ions can be imparted with energy to enter the substrate 3, and when positive, electrons can be supplied when positive. By controlling the ratio of the time during which the positive and negative voltages are applied, the kinetic energies of carbon ions, hydrogen ions, and electrons and their amounts can be controlled. Also, V1
By synchronizing between (t) and V2 (t) and controlling (V1 (t) -V2 (t)) in total, the kinetic energies of carbon ions, hydrogen ions and electrons and their amounts can be reduced. Can be controlled.

In the case of FIG. 2, V1 (t) and V2 (t) are synchronized with each other to extract a large amount of ions from the gas ion source 10 and to make the energy level suitable for forming a thin film when incident on the substrate 3. This shows a case where control is performed. First, in order to extract a large amount of ions from the reaction gas introduction chamber 11 in the excited ionization state, V2 (t) is set to a large bias voltage in the positive direction as shown in FIG. A large amount of ions can be extracted in proportion. At the same time, the ions are decelerated by biasing V1 (t) in the positive direction as shown in FIG. 2 (a), and the total, that is, (V1 (t) -V2 (t)) is as shown in FIG.
As shown in (c), the kinetic energy of the ions extracted from the gas ion source 10 is controlled to an appropriate level and the ions are incident on the substrate 3. Note that while V2 (t) is negative, electrons are extracted from the gas ion source 10 and (V1 (t)
-V2 (t)) to enter the substrate 3.

FIG. 3 shows that the kinetic energy of ions is reduced in the case of forming a mixing layer by injection into the substrate 3 or in the case of ion sputtering in order to increase the adhesion of the thin film to the substrate 3. This shows a case where a large energy level is set. In order to extract a large amount of ions from the reaction gas introduction chamber 11, V2 (t) is set to a large bias voltage in the positive direction as shown in FIG. At the same time, by setting V1 (t) to a negative bias voltage as shown in FIG. 11A, energy is further applied to the ions, and (V1 (t) -V2 As shown in (t)), a large kinetic energy is applied to the ions to control them to an energy level at which ion sputtering is possible, and the ions are incident on the substrate 3.

FIG. 4 shows a case in which V1 (t) and V2 (t) are alternate voltages, but they are synchronized to have the same magnitude and are set to zero as a total. In this case, V2 (t) alternates between positive and negative, and ions and electrons are respectively extracted from the gas ion source 10. However, the ions are decelerated by V1 (t) and ions and electrons are present in the reaction gas introduction chamber 11. Due to the kinetic energy, the light enters the base material 3. FIG. 5 is similar to FIG. 4 except that (V1 (t) -V2
(T)) is a constant negative voltage,
Energy is given to the ions.

Although FIGS. 2 to 5 show a rectangular wave and a sine wave, other waveforms such as a triangular wave may be used. FIG. 6 shows the results of Raman analysis of the DLC thin film obtained as described above.
As shown in the figure, the main peak is around 1550 cm ⁻¹ ,
An asymmetric Raman band having a shoulder band near 0 cm ^-1 was observed, showing a typical spectrum of DLC, which indicates that a high-quality DLC thin film was formed. For comparison, the spectra of the graphite thin film are shown.

As a pretreatment for forming a DLC thin film,
The surface of the substrate 3 may be cleaned. In that case, for example, argon gas suitable for ion cleaning is introduced from the reaction gas pipe 14 into the reaction gas introduction chamber 11,
The degree of vacuum in the reaction gas introduction chamber 11 is changed from 1 × 10 ^-2 to 1 × 10
^-1 Torr. Then, the thermoelectron emission means 12 is operated to irradiate electrons toward the thermoelectron extraction electrode 13, thereby ionizing the gas. The second bias means 21 causes the reaction gas introduction chamber 11 in the excited ionization state to enter the reaction gas introduction chamber 11. From the first bias means 20
The kinetic energy of the ions incident on the substrate 3,
Control the amount. At this time, the first and second bias means 2
By setting the total voltage (V1 (t) -V2 (t)) of 0 and 21 to about -0.5 to -3 kV, the cleaning process can be performed effectively. By the above-described cleaning treatment, impurities such as moisture, oil components, and surface oxides on the surface of the substrate 3 can be removed, and the adhesion between the substrate 3 and the DLC thin film is improved.

Embodiment 2 FIG. FIG. 7 shows a voltage waveform of V1 (t) applied to the substrate 3 by the first bias means 20 during DLC film formation in the second embodiment. The description of the same parts as those in FIG. 1, such as the configuration of the apparatus, is omitted. V
1 (t) is a DC, half-wave rectified or full-wave rectified negative voltage, which gives energy to ions to obtain a DLC thin film having good adhesion and high hardness. At this time, V2 (t) is a voltage for extracting ions or electrons from the gas ion source 10, for example, as shown in FIGS.
The voltage shown in any of (c) is used. Also, V1
When both (t) and V2 (t) are not direct current and are voltages that vary with time, it is preferable to synchronize them.

Embodiment 3 FIG. FIG. 9 shows V1 applied to the substrate 3 by the first bias means 20 during DLC film formation.
The voltage waveform of (t) is shown. The description of the same parts as in the case of FIG. 1 is omitted. FIG. 3A shows a sine wave, and FIGS.
(D) shows a waveform biased to the negative side.
In (a) and (b), the voltage alternates between positive and negative, and (c),
In (d), the negative voltage changes with time t.
Energy is given to the ions extracted from the gas ion source 10 when the voltage is negative and to electrons when the voltage is positive. FIG. 10 shows a case where a rectangular wave is used in place of the sine wave of FIG. 9, and has the same effect as that of FIG. In addition,
In these cases, V2 (t) may be, for example, a voltage as shown in FIG. 8B or 8C as a voltage for extracting ions or electrons from the gas ion source 10.

Embodiment 4 FIG. 11 shows a voltage waveform of V1 (t) during DLC film formation. The description of the same parts as in the case of FIG. 1 is omitted. Both the positive half-wave and the negative half-wave of V1 (t) have a sine wave half-wave shape, but the negative period is longer than the positive period. Therefore, it mainly gives energy to ions and also has an effect as a measure against charge-up. FIG. 12 shows a case where a rectangular wave is used instead of the sine wave of FIG. 11, and the same effect as in the case of FIG. 11 is obtained. 11 (a) and 11 (b) and FIG.
In the cases (a) and (b), V2 (t) is a voltage for extracting ions or electrons from the gas ion source 10, and is, for example, any of FIGS. 8 (b) and (c) or FIGS. 13 (a) and 13 (b). 11 (c) and (d)
In the case of FIGS. 12C and 12D, for example, the voltage shown in FIG. 14A or 14B may be used as V2 (t).

Embodiment 5 FIG. FIG. 15 shows a voltage waveform of V1 (t) during DLC film formation. Description of the same parts as in FIG. 1 is omitted. Both the positive half-wave and the negative half-wave of V1 (t) have a sine-wave half-wave shape, but, contrary to FIG. 11, the positive period is longer than the negative period. Therefore, since electrons can be mainly supplied to the base material 3, a sufficient charge-up countermeasure can be taken, and energy can be given to the ions. FIG. 16 shows a case where a rectangular wave is used instead of the sine wave of FIG.
The same effect as in the case of No. 5 is obtained. In addition, FIG.
In the case of (b) and FIGS. 16 (a) and (b), V2 (t)
As a voltage for extracting ions or electrons from the gas ion source 10, for example, a voltage shown in any of FIGS. 17A to 17D is used, and FIGS. 15C, 15D, and 16C are used. , (D), V2 (t) is, for example, as shown in FIG.
The voltage shown in (a) or (b) may be used. Also,
FIGS. 7 to 18 show sine or rectangular waveforms, but other waveforms such as a triangular waveform may be used.

Embodiment 6 FIG. FIG. 19 is a sectional view of a DLC thin film forming apparatus according to the sixth embodiment. Compared to FIG.
The first bias means (20) is not provided, and the potential of the substrate 3 is the same as that of the acceleration electrode 15. Others are the same as those in FIG. 1 and the description is omitted. In this embodiment, when forming a DLC thin film,
The energy of ions and electrons incident on the base material 3 is the second
, The operation is simplified and the device is simplified.

Embodiment 7 FIG. 20 shows that the thermoelectron emission means 12 is provided by the second bias means 21 during the DLC film formation.
5 shows a voltage waveform of V2 (t) applied to the oscilloscope. Description of the same parts as in FIG. 1 is omitted. V2 (t) is a DC, half-wave rectified or full-wave rectified positive voltage that can efficiently extract ions from the gas ion source and provide energy to the ions. In these cases, V1 (t) is a voltage that gives energy to ions, for example, as shown in FIGS.
A voltage having one of the waveforms of (c) is used.

Embodiment 8 FIG. 22 shows a voltage waveform of V2 (t) during DLC film formation. The description of the same parts as in the case of FIG. 1 is omitted. FIG. 3A shows a sine wave, and FIGS.
(D) shows a waveform which is biased to the positive side.
In (a) and (b), the voltage alternates between positive and negative, and (c),
In (d), the positive voltage changes with time t.
Ions are extracted from the gas ion source 10 during a positive voltage period, and electrons are extracted during a negative voltage period. FIG. 23 shows a case where a rectangular wave is used in place of the sine wave of FIG. 22, and has the same effect as that of FIG. In these cases, V1
(T) is a voltage that gives energy to ions or electrons, for example, the voltage shown in FIG. 24 (a) or (b).

Embodiment 9 FIG. 25 shows a voltage waveform of V2 (t) during DLC film formation. Description of the same parts as in FIG. 1 is omitted. Although both the positive half-wave and the negative half-wave of V2 (t) have a sine-wave half-wave shape, the positive period is longer than the negative period. Therefore, energy can be mainly given to the ions to extract them from the gas ion source 10 and also supply electrons. FIG. 26 shows a case where a rectangular wave is used instead of the sine wave of FIG. 25, and has the same effect as the case of FIG. In the case of FIGS. 25A and 25B and FIGS. 26A and 26B, V1 (t) is a voltage that gives energy to ions or electrons, for example, as shown in FIG.
1 (b), (c) or any of the voltages shown in FIGS. 27 (a), (b), and in the case of FIGS. 25 (c), (d) and FIGS. 26 (c), (d) , V1 (t) may use the voltages shown in FIG. 28 (a) or (b), for example.

Embodiment 10 FIG. 29 shows a voltage waveform of V2 (t) during DLC film formation. The description of the same parts as in FIG. 1 is omitted. Although both the positive half-wave and the negative half-wave of V2 (t) have a sine-wave half-wave shape, the negative period is longer than the positive period, contrary to FIG. Accordingly, the gas ion source 10 can mainly supply electrons to sufficiently take charge-up countermeasures, and of course can supply ions. FIG. 30 shows a case where a rectangular wave is used instead of the sine wave of FIG. 29, and the same effect as in the case of FIG. 29 is obtained.

FIGS. 29A and 29B and FIG.
In the cases (a) and (b), V1 (t) is a voltage that gives energy to ions or electrons, for example, as shown in FIG.
(A), (b) or any of the voltages shown in FIGS. 31 (a) and (b), and in the case of FIGS. 29 (c) and (d) and FIGS. 30 (c) and (d), V1 (t) may use the voltage shown in FIG. 32A or 32B, for example. 20 to 31 show sinusoidal or rectangular waveforms, other waveforms such as triangular waveforms may be used.

[0032]

As described above, in the DLC thin film forming apparatus according to the present invention, the first bias means for applying a voltage to the base material with respect to the accelerating electrode and the second bias means for applying a voltage to the thermionic electron emitting means are provided. And bias means, each of which can apply a voltage as a function of time.
By controlling the voltage by the second bias means,
Since energy can be given to ions, or electrons can be supplied to the substrate as a measure against charge-up, and their degree can be controlled, a high-quality DLC thin film with good adhesion, high hardness and good flatness can be obtained. There is an effect that can be formed.

Further, by applying a negative voltage to the base material by the first bias means, energy is given to the ions, and a DLC thin film having good adhesion and high hardness can be obtained. In addition, by setting the voltage of the first bias means to a voltage that alternates between positive and negative, energy can be given to ions, or electrons can be supplied to the substrate to neutralize charge-up.

Further, by applying a positive charge to the thermionic emission means by the second bias means, energy can be given to the ions and the ions can be efficiently extracted from the gas ion source. Further, by setting the voltage of the second bias means to a voltage that alternates between positive and negative, energy can be given to ions, and electrons can be supplied from a gas ion source.

Further, by making the negative time of the positive / negative alternating voltage by the first bias means longer than the positive time, energy can be mainly given to ions,
Conversely, by increasing the positive time, mainly electrons can be supplied to the substrate. Also, by making the positive time of the positive / negative alternating voltage by the second bias means longer than the negative time, energy can be mainly given to the ions, and conversely, by making the negative time longer, the electrons can be mainly produced. Can be supplied from the ion source.

Further, by synchronizing the voltages of the first and second bias means with each other, it is possible to control both voltages as a total voltage, and it is possible to control the energy applied to the ions and the amount of electrons supplied to the substrate. Further, by setting the potential of the substrate to the same potential as the accelerating potential, the apparatus can be relatively simplified.

[Brief description of the drawings]

FIG. 1 is a sectional view of a DLC thin film forming apparatus according to a first embodiment of the present invention.

FIG. 2 shows first and second embodiments according to the first embodiment of the present invention.
FIG. 6 is a waveform diagram showing a voltage by the bias means of FIG.

FIG. 3 shows first and second embodiments according to the first embodiment of the present invention.
FIG. 6 is a waveform diagram showing a voltage by the bias means of FIG.

FIG. 4 shows first and second embodiments according to the first embodiment of the present invention.
FIG. 6 is a waveform diagram showing a voltage by the bias means of FIG.

FIG. 5 shows first and second embodiments according to the first embodiment of the present invention.
FIG. 6 is a waveform diagram showing a voltage by the bias means of FIG.

FIG. 6 is a Raman spectrum diagram showing the results of Raman analysis of a thin film.

FIG. 7 is a waveform chart showing a voltage by a first bias unit according to the second embodiment of the present invention.

FIG. 8 is a waveform chart showing a voltage by a second bias means according to the second embodiment of the present invention.

FIG. 9 is a waveform chart showing a voltage by a first bias unit according to the third embodiment of the present invention.

FIG. 10 is a waveform chart showing a voltage by a first bias unit according to the third embodiment of the present invention.

FIG. 11 is a waveform diagram showing a voltage by a first bias unit according to a fourth embodiment of the present invention.

FIG. 12 is a waveform diagram showing a voltage by a first bias unit according to the fourth embodiment of the present invention.

FIG. 13 is a waveform diagram showing a voltage by a second bias means according to the fourth embodiment of the present invention.

FIG. 14 is a waveform diagram showing a voltage by a second bias unit according to the fourth embodiment of the present invention.

FIG. 15 is a waveform chart showing a voltage by a first bias unit according to the fifth embodiment of the present invention.

FIG. 16 is a waveform diagram showing a voltage by a first bias unit according to the fifth embodiment of the present invention.

FIG. 17 is a waveform chart showing a voltage by a second bias means according to the fifth embodiment of the present invention.

FIG. 18 is a waveform chart showing a voltage by a second bias means according to the fifth embodiment of the present invention.

FIG. 19 is a sectional view of a DLC thin film forming apparatus according to a sixth embodiment of the present invention.

FIG. 20 is a waveform chart showing a voltage by a second bias unit according to the seventh embodiment of the present invention.

FIG. 21 is a waveform chart showing a voltage by a first bias unit according to the seventh embodiment of the present invention.

FIG. 22 is a waveform chart showing a voltage by a second bias means according to the eighth embodiment of the present invention.

FIG. 23 is a waveform chart showing a voltage by a second bias means according to the eighth embodiment of the present invention.

FIG. 24 is a waveform chart showing a voltage by a first bias unit according to the eighth embodiment of the present invention.

FIG. 25 is a waveform chart showing a voltage by the second bias means in the ninth embodiment of the present invention.

FIG. 26 is a waveform chart showing a voltage by the second bias means according to the ninth embodiment of the present invention.

FIG. 27 is a waveform diagram showing a voltage by a first bias unit according to the ninth embodiment of the present invention.

FIG. 28 is a waveform chart showing a voltage by the first bias means in the ninth embodiment of the present invention.

FIG. 29 is a waveform chart showing a voltage by the second bias means in the tenth embodiment of the present invention.

FIG. 30 is a waveform chart showing a voltage by a second bias unit according to the tenth embodiment of the present invention.

FIG. 31 is a waveform diagram showing a voltage by a first bias unit according to the tenth embodiment of the present invention.

FIG. 32 is a waveform diagram showing a voltage by a first bias unit according to the tenth embodiment of the present invention.

FIG. 33 is a sectional view of a conventional DLC thin film forming apparatus.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 Vacuum tank, 3 base materials, 10 gas ion source, 11 reaction gas introduction chamber, 12 thermoelectron emission means, 13 thermoelectron extraction electrode, 15 acceleration electrode, 20 first bias means, 21 second bias means.

Claims (9)

[Claims] 1. A thin film forming apparatus for forming a diamond-like carbon thin film on a substrate, comprising: a vacuum chamber containing the substrate while maintaining the inside at a predetermined degree of vacuum; A gas ion source for generating dissociated carbon and carbon ions, and dissociated hydrogen and hydrogen ions, wherein the gas ion source is provided with an orifice toward the base material and a reaction in which gas is introduced. A gas introduction chamber, a thermionic emission means provided in the reaction gas introduction chamber to emit thermoelectrons, a thermionic extraction electrode for extracting thermoelectrons from the thermion emission means, and a thermoelectron extraction electrode provided outside the reaction gas introduction chamber A first bias means comprising an accelerating electrode for accelerating the ions toward the base material, and capable of applying a voltage to the base material as a function of time with respect to the accelerating electrode; And a second bias means for applying a voltage to the thermionic electron emission means as a function of time. 2. The diamond-like carbon thin film according to claim 1, wherein a voltage applied to the base material by the first bias means with respect to the acceleration electrode is a direct current or a time-varying negative voltage. Forming equipment. 3. The diamond-like carbon thin film forming apparatus according to claim 1, wherein the voltage applied to the base material by the first bias means with respect to the acceleration electrode is a voltage alternating between positive and negative. . 4. The diamond-like diamond according to claim 1, wherein the voltage applied to the thermionic emission means with respect to the acceleration electrode by the second bias means is a direct current or a positive voltage which changes with time. Carbon thin film forming equipment. 5. The diamond-like carbon thin film according to claim 1, wherein the voltage applied to the thermionic emission means with respect to the acceleration electrode by the second bias means is a voltage alternating between positive and negative. Forming equipment. 6. The diamond-like carbon thin film forming apparatus according to claim 3, wherein the voltage alternating between positive and negative has a negative time longer than the positive time. 7. The diamond-like carbon thin film forming apparatus according to claim 3, wherein the positive and negative alternating voltages have a positive time longer than a negative time. 8. The voltage applied to the substrate by the first bias means with respect to the acceleration electrode and the voltage applied to the thermoelectron emission means with respect to the acceleration electrode by the second bias means are synchronized with each other. 2. The diamond-like carbon thin film forming apparatus according to claim 1, wherein the applied voltage is a predetermined voltage. 9. A thin film forming apparatus for forming a diamond-like carbon thin film on a substrate, comprising: a vacuum chamber containing the substrate while maintaining the inside at a predetermined degree of vacuum; A gas ion source for generating dissociated carbon and carbon ions, and dissociated hydrogen and hydrogen ions, wherein the gas ion source is provided with an orifice toward the base material and a reaction in which gas is introduced. A gas introduction chamber, a thermionic emission means provided in the reaction gas introduction chamber to emit thermoelectrons, a thermionic extraction electrode for extracting thermoelectrons from the thermion emission means, and a thermoelectron extraction electrode provided outside the reaction gas introduction chamber And an accelerating electrode for accelerating the ions toward the base material, and comprising bias means capable of applying a voltage as a function of time to the thermoelectron emitting means with respect to the accelerating electrode. An apparatus for forming a diamond-like carbon thin film, wherein the potential of the base material is the same as that of the acceleration electrode.