JPH1070220A - Power amplification module - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a power amplification module having attained high performance by releasing heat generated by a power amplifier to the external side in a higher efficiency. SOLUTION: This module 10 is provided with a package 20 formed by coupling an almost flat base plate 30 and a cap 40 as an almost box type metal package cap. On the base plate 30, an almost flat type insulating substrate 50 and this substrate is covered with the cap 40. The insulating substrate 50 is provided with a couple of through holes 52a, 52b and almost flat type two heat spreaders 60a, 60b are provided on the base plate 30 exposed from these through holes 52a, 52b. On the surfaces of these heat spreaders 60a, 60b, the semiconductor devices 70a, 70b sealed by the resin, etc., are provided and soldered, respectively.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a power amplification module, and more particularly to a power amplification module for mounting a semiconductor device packaged with resin, ceramic, or the like.

[0002]

2. Description of the Related Art In recent years, with the demand for miniaturization and high functionality of electronic equipment, electronic components incorporated in electronic equipment have been further miniaturized and enhanced in function. A small electronic circuit board is formed by arranging extremely small active elements, passive elements, and the like on an insulating substrate and connecting them with each other by a circuit pattern formed on the insulating substrate. Further, as this electronic circuit board, for example, a so-called power amplification module has been widely used as a modularized electronic component incorporated in a package or the like.

A conventional example of such a modularized electronic component will be described with reference to FIG. As shown in an exploded perspective view of FIG. 10A, an active element 1 such as a transistor and a chip-shaped passive element 2 such as a resistor and a capacitor are formed on a circuit pattern (not shown) formed on an insulating substrate 80. To form an electronic circuit. Here, active elements that generate heat during operation are directly fixed on the insulating substrate.

Further, a plurality of metal lead pins 83a to 83d are fixed to the side end of the insulating substrate 80.

On the other hand, the lead pins 83a and the like
It is composed of a hook-shaped fixing portion 84 for holding the side end of the “0” and a foot portion 85 bent downward from the insulating substrate 80, and is manufactured by integrally molding these. The fixing portion 84 is electrically connected to a predetermined portion of the circuit pattern. The reason why the legs 85 bent below the insulating substrate 80 are formed is that, when the module is finally mounted on a substrate of various electronic devices, the fixing portion 84 is formed. This is for providing a gap so that the bottom surface of the electronic device does not contact the substrate (not shown) of the electronic device, thereby preventing a short circuit with a circuit pattern formed on the substrate of the electronic device.

Further, on the bottom surface of the insulating substrate 80, FIG.
A base plate 3 as shown in FIG. The base 3 is bent at both ends so that the foot 85 of the lead pins 83a to 83d is bent.
Step portions 4 and 5 having the same height as are formed. As described above, when finally mounting the modularized electronic components on the boards of various electronic devices, the heights of the feet 85 of the lead pins 83a to 83d and the steps 4, 5 of the base 3 are equal. doing. Next, the box-shaped package lid 6 is fitted from above the wiring board 80, thereby finally forming a modularized electronic component.

[0007]

The conventional power amplifier module as described above has an active element that generates a large amount of heat due to high output characteristics. However, since the insulating substrate is usually made of alumina or glass epoxy resin and has only a relatively small thermal conductivity, it is necessary to efficiently radiate the heat generated from the output stage transistor as an active element to the outside. Was difficult. Therefore, there has been a problem that the operating speed and life of various electronic devices are reduced.

In the module electronic component having such a structure, since the steps 4, 5 of the base 3 are formed by bending, the base 3 always has a uniform height.
And the following problems were caused.

That is, if the heights of the steps 4 and 5 of the base 3 are not equal, play may occur when this power amplification module is arranged on a substrate of an electronic device. When a heat radiating plate (not shown) is interposed between the bottom surface of the base 3 and the substrate of the electronic device in order to improve the heat radiating effect, the adhesion of the heat radiating plate becomes poor due to the occurrence of the above-mentioned play. However, there has been a problem that a sufficient heat radiation effect cannot be obtained.

As such a module, productivity,
In many cases, a semiconductor device sealed with a mold that is superior in reliability is used. However, it has been difficult for a power amplifier module equipped with this type of semiconductor device to satisfy, in particular, deterioration of high-frequency characteristics and heat radiation.

SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and is intended to provide a power amplification module having a packaged semiconductor device, which efficiently radiates heat generated from the packaged semiconductor device to the outside. It is an object of the present invention to provide a power amplification module having a structure that can be used.

[0012]

SUMMARY OF THE INVENTION In order to solve the above-mentioned problems, a power amplifier module according to the present invention has a circuit pattern formed on a main surface thereof, and has at least one through hole penetrating the main surface and the back surface. , A metal base plate on which the insulating substrate is mounted, mounted on the base plate, and exposed from the punched hole provided on the insulating substrate, and the upper surface thereof is provided on a main surface of the insulating substrate. A packaged semiconductor device having at least one heat spreader substantially level with a surface and electrical terminals extending substantially horizontally from a bottom surface of the package, mounted on a top surface of the at least one heat spreader; At least one semiconductor that electrically connects the circuit pattern on the substrate and the electric terminal to form a power amplifier circuit; And a device, the base plate and the at least one heat spreader,
The insulating substrate is formed of a material having a higher thermal conductivity than the constituent material.

With the configuration described above, when the power amplifier module operates as a power amplifier, heat generated from the packaged semiconductor device is radiated to the outside with high efficiency via the heat spreader and the base plate, and Various circuit elements constituting the amplifier circuit operate stably without being exposed to high temperatures.

In the above structure, at least one heat spreader is made of Cu or C having high thermal conductivity.
By using uW, the heat radiation effect can be further enhanced.

Further, in the above structure, the heat dissipation effect can be further enhanced by using a Cu or FeNi alloy having a high thermal conductivity as a constituent material of the base plate.

Further, the operation of the power amplification module can be further stabilized by accommodating the insulating substrate therein and providing a package lid fitted to the base plate.

[0017] Further, the semiconductor device further comprises a plurality of lead terminals fixed to an end of the insulating substrate and having legs bent to the bottom side of the insulating substrate. A substrate on which a base plate and a power amplification module are mounted by making the amount by which the insulating substrate floats due to the bending of the legs equal to the thickness of the base plate so that the base plate and the power amplifying module are not in contact with each other. And the heat generated in the packaged semiconductor device flows through the heat spreader and the base plate to the substrate on which the power amplification module is mounted, and a high heat radiation effect can be obtained.

[0018]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of a power amplification module according to the present invention will be described with reference to the accompanying drawings. In each of the drawings, the same reference numerals indicate the same or corresponding portions, and redundant description will be omitted.

FIG. 1 is a perspective view showing a power amplifying module according to an embodiment of the present invention, FIG. 2 is a cross-sectional view of the power amplifying module taken along an XY plane intersecting an upper part of a lid of FIG. 1, and FIG. , Including a longitudinally extending center line of FIG.
FIG. 4 is a cross-sectional view of the power amplification module along an XZ plane in FIG. 1.

The power amplification module 10 according to the present embodiment
The package 20 includes a substantially flat base plate 30 and a substantially square box-shaped metal package lid cap 40 joined thereto. On the base plate 30, a substantially flat insulating substrate 50 is provided. Circuit patterns 51a, 51b, 5
1c, 51d, 51e and 51f are formed. or,
This insulating substrate 50 is covered with a cap 40. Two cutout holes 52a and 52b are formed in the insulating substrate 50, and two substantially flat heat spreaders 60a and 60b are respectively formed on the base plate 30 exposed from the cutout holes 52a and 52b. is set up. On each surface of these heat spreaders 60a and 60b,
Semiconductor devices 70a, 70 packaged with resin or the like
b is fixedly installed by an adhesive or soldering.
The packaged semiconductor devices 70a, 70b
Has terminals 75a, 75b, and 75c that extend horizontally from the bottom surface and whose lower surface substantially matches the bottom surface of the packaged semiconductor device, as shown in FIG. The terminals 75a, 75b, 75c are respectively
The circuit pattern 51a formed on the insulating substrate 50 is connected by solder. Here, since the height of the upper surface of the heat spreader 60 matches the height of the upper surface of the insulating substrate 50, the packaged semiconductor devices 70a, 70
The height of the lower surface of the terminal extending from 0b matches the height of the upper surface of the insulating substrate 50. Therefore, electrical connection by solder or the like to the circuit pattern on the insulating substrate and the terminal of the packaged semiconductor device can be easily and reliably performed.

Next, as shown in FIG. 4, the base plate 30 is in close contact with the bottom surface of the insulating substrate 50 so as not to contact with the fixing portions 57a of the lead pins. Further, the thickness W of the base plate 30 is substantially equal to the amount by which the insulating substrate 50 floats due to the bending of the legs 56a to 56d of the lead pins 55a to 55d. Further, the lead pin 55
A gap 87 is formed between each of the fixing portions 57a to 57d a to 55d and the base plate 30 to prevent an electrical short circuit.

The insulating substrate 50 and the base plate 30
As shown in Table 1, a combination of materials having linear expansion coefficients close to each other is used.

[0023]

[Table 1]

Further, the base plate 30 is made of a material having a higher thermal conductivity than the insulating substrate, for example, Cu or FeN.
It is formed of an i-alloy or the like. The base plate 30
A substrate support portion 31 that supports and installs the back surface of the insulating substrate 50 on the substantially rectangular main surface, and four cap support portions 32a that extend to both ends in the longitudinal direction of the substrate support portion 31 and support the cap 40; 32b, 32c and 32d.

The outer ends of the cap support portions 32b and 32d in the short direction are cut out in a substantially rectangular shape. In addition, the outer ends in the longitudinal direction of the base plate 30 in the cap support portions 32a to 32d are cut out in a substantially semicircular shape.

The space between the two cap supports 32a and 32b arranged in the lateral direction of the substrate support 31 and the space between the two cap supports 32a and 32b are bent in the normal direction. Two substrate holding portions 33a, 33 that engage with and hold the two base plate engaging portions of the insulating substrate 50
b is provided. These substrate holding portions 33a, 33
On the outer surface in the longitudinal direction of b, cap fitting portions 34a and 34b are formed to protrude outward, and these fit into the base plate fitting portion of the cap.

Next, as shown in FIG.
A metal envelope having a hollow interior joined to the base plate 30, and a material having a higher thermal conductivity than the substrate body of the insulating substrate 50, such as Cu or FeN.
It is formed of an i-alloy or the like. The cap 40 has a substrate covering portion 41 and a pin insertion portion 42 which is formed by cutting out one side plate in the short direction of the substrate covering portion 41 and through which lead pins 55a to 55d are inserted and exposed. further,
Two base plate fitting portions 43 for inserting and holding the two cap fitting portions 34a and 34b of the base plate 30 are inserted into two longitudinal side plates of the substrate covering portion 41.
a, 43b are formed.

Next, as shown in FIG. 7, the insulating substrate 50 has, for example, five electronic device components 54a to 54e mounted on the upper surface thereof. They are electrically connected to the circuit pattern 51a and the like. In addition, lead pins 55a to 55d which are partially fixed on the front surface and the rear surface of the insulating substrate, extend in the short direction, and protrude outside from the pin insertion portion 42 of the cap 40 are provided on side portions.

The insulating substrate 50 is made of an inorganic material such as alumina or glass, or a glass cloth epoxy resin laminated material containing PPO (2,5-dyphenyloxaxole; 2,5-diphenyloxazole) or the like. The insulating substrate 50 is formed with two punched holes 52a and 52b which are formed by penetrating between the front surface and the back surface. Also, the insulating substrate 5
0, two base plate engaging portions 53a, 5 which are cut and machined in a substantially rectangular parallelepiped shape and are engaged with and sandwiched by two substrate sandwiching portions of the base plate 30.
3b is formed.

The lead pins 55a to 55d are
No. 0 is a metal clip-type lead pin that sandwiches the front and back surfaces at the same time, and is made of, for example, phosphor bronze. These lead pins 55a to 55d are provided with hook-shaped fixing portions 57a to 57d for holding the side ends of the insulating substrate 50.
And the feet 56a to 5b bent downward from the insulating substrate 50.
6d is integrally formed with the fixing portion 8
4 is electrically connected to a predetermined portion such as a circuit pattern 51a formed on the insulating substrate 50. The circuit pattern 51a and the like on the insulating substrate 50 are wired with a metal foil, and are formed of, for example, Cu.

Next, as shown in FIG. 8, the heat spreader 60a is a metal semiconductor device mounting table fixed on the base plate 30 exposed in the cutout hole of the insulating substrate. The upper surface is configured to have the same height as the upper surface of the insulating substrate 50 when installed, so that the height matches the thickness of the insulating substrate 50. Note that the heat spreader 60b is also a heat spreader 60a.
It is configured similarly to. Heat spreader 60a, 6
Ob is fixed on the base plate 30 with a heat-resistant adhesive. Also, the heat spreaders 60a, 60b
Is a material having a higher thermal conductivity than the insulating substrate 50,
For example, it is formed of Cu or CuW.

The packaged semiconductor device 70a
Has at least one terminal exposed on the entire back surface,
The electrode and the heat spreader 60a are electrically connected and mechanically fixed. In addition, lead pins 75a-75 protruding from the side of the semiconductor device 70a.
c is electrically connected to the electronic circuit pattern of the insulating substrate 50 by soldering or the like. The packaged semiconductor device 70b has the same configuration as the packaged semiconductor device 70a, and is fixed on the surface of the heat spreader 60b.

Next, the operation of the power amplification module 10 according to the present embodiment will be described.

The semiconductor devices 70a and 70b
5a to 75c, which are electrically connected to the electronic circuit pattern of the substrate main body 51, and are connected to the electronic device components 54a to 54e.
And a power amplifier circuit together with the lead pins 55a to 55d. In such a power amplifier circuit, especially when it is used in the output stage, the semiconductor device 7
0a and 70b generate a large amount of heat.

The two heat spreaders 60 a and 60 b fixed in contact with the base plate 30, the cap 40 and the base plate 30, which constitute the package 20,
The insulating substrate 50 is formed of a material having a higher thermal conductivity than that of the constituent material. As a result, heat generated from the semiconductor devices 70a and 70b is successively transmitted through the heat spreaders 60a and 60b, the base plate 30, and the cap 40, and is released to the outside of the package 20 with high efficiency.

Therefore, the electronic devices 54a to 54e
Operates stably without being exposed to a high temperature without being affected by heat generated from the semiconductor devices 70a and 70b, and does not cause a decrease in operating speed or life due to a rise in temperature.

Next, the power amplification module 1 of this embodiment
The measurement of the heat radiation characteristic for the experimental example in which 0 is created will be described.

The power amplification module of this experimental example was prepared based on the specifications shown in Table 2 below.

Table 2 Insulating substrate: material PPO, thickness 0.6 mm, coefficient of linear expansion 20 ppm / K, relative dielectric constant 10.4 Heat spreader: material Cu, thickness 0.6 mm, thermal conductivity 3.9 W / cm · K, linear expansion coefficient 17 ppm / K Base plate: material Cu, thickness 0.6 mm, thermal conductivity 3.9 W / cm · K, linear expansion coefficient 17 ppm / K The results of repeatedly measuring the thermal resistance were as follows.

Measured value of thermal resistance: 14.7 to 16.6 K / W Thermal resistance θ [K / W] of such a power amplification module
Is defined as follows: Here, ΔT is the difference between the channel temperature of the semiconductor device and the ambient temperature of the package, Q is the power consumption [W] of the power amplification module, and there is a relationship of θ = ΔT / Q.

Here, when the packaged semiconductor device is an FET, the channel temperature of the FET must normally be kept at 130 ° C. or lower in order to operate the FET normally. The ambient temperature at which this FET is used is required to be up to 80 ° C. Therefore, in order to operate normally, the temperature rise of the channel of the FET must be suppressed to 50 ° C. or less.

In the heat radiation characteristics of the power amplification module of the present experimental example, as is apparent from FIG. 9, the temperature rise of the channel of the FET can be kept at 50 ° C. or less for the power consumption of 3 W or less. , The above conditions can be satisfied.

Note that the present invention is not limited to the above-described embodiment, and various modifications can be made. For example, in the above-described embodiment, the constituent material of the heat spreader is Cu or CuW, and the constituent material of the package is Cu or an FeNi alloy. However, as the constituent material of the heat spreader and the package, various other materials may be used as long as they have higher thermal conductivity than the constituent material of the insulating substrate.

In the above embodiment, the packaged semiconductor device is configured as an FET. However, as the semiconductor device, various other electronic devices may be applied as long as the semiconductor device functions as a power amplifier by being electrically connected to the electronic circuit pattern on the insulating substrate.

Further, in the above-described embodiment, 2
A plurality of punched holes are formed in the insulating substrate. However, the number of the cutout holes formed in the insulating substrate may be only one, or may be many, and the positions for forming the holes may be formed at any positions on the insulating substrate.

In the above-described embodiment, a so-called single-in-line type packaged semiconductor device in which lead pins are provided on one side end of an insulating substrate has been described. However, the present invention provides lead pins on both sides of a wiring board. The present invention can be similarly applied to the provided dual-inline type packaged semiconductor device. Further, the present invention is not limited to the power amplification module, but can be applied to various wide-ranging electronic components.

[0047]

According to the present invention as described above,
When the power amplifying module operates as a power amplifier, heat generated from the semiconductor device is transmitted to the heat spreader and the package without conducting to the insulating substrate, so that the heat is efficiently released to the outside of the package,
Various electronic devices constituting the power amplifying circuit have an effect of maintaining a constant temperature and operating stably.
In addition, when the power amplification module is installed on the substrate of various electronic devices, the base plate of the same thickness as the height of the lead pin is in close contact with the bottom of the wiring board, which solves problems such as insufficient heat dissipation. It has the effect that it can be done.

[Brief description of the drawings]

FIG. 1 is a perspective view showing a power amplification module according to an embodiment of the present invention.

FIG. 2 is a cross-sectional view of the power amplification module taken along an XY plane crossing an upper part of the package lid of FIG.

FIG. 3 is a cross-sectional view of the power amplification module taken along a YZ plane including a center line extending in a longitudinal direction of FIG. 1;

FIG. 4 is a cross-sectional view of the power amplification module along the XZ plane in FIG.

FIG. 5 is a perspective view showing a base plate in the power amplification module of FIG. 1;

FIG. 6 is a perspective view showing a package lid in the power amplification module of FIG. 1;

FIG. 7 is a perspective view showing an insulating substrate in the power amplification module of FIG. 1;

FIG. 8 is a perspective view showing a heat spreader and a semiconductor device in the power amplification module of FIG.

FIG. 9 is a diagram showing characteristics of thermal resistance-channel temperature change corresponding to various power consumptions for evaluating thermal resistance of one experimental example in the power amplification module according to the present invention.

FIG. 10 is a perspective view showing a conventional module electronic component.

[Explanation of symbols]

10: power amplification module, 20: package, 30 ...
Base plate, 31 ... substrate support, 32a-32d ...
Cap support portion, 33a, 33b ... substrate holding portion, 34
a, 34b: cap fitting portion, 40: cap, 41:
Substrate covering part, 42: Pin penetrating part, 43: Base plate fitting part, 50: Insulating substrate, 51a, 51b, 51c, 5
1d: circuit pattern, 52a, 52b: punched hole, 5
3a, 53b: base plate engaging portions, 54a to 54e
... Electronic device parts, 55a to 55d ... Lead pins, 5
6a, 56b: foot, 57a, 57b: fixed part, 60
a, 60b: heat spreader; 70a, 70b: packaged semiconductor devices; 75a to 75c: lead pins.

 ────────────────────────────────────────────────── ─── Continuing on the front page (72) Inventor Tatsuya Hashicho 1 Taya-cho, Sakae-ku, Yokohama-shi, Kanagawa Prefecture Sumitomo Electric Industries, Ltd. Yokohama Works

Claims (5)

[Claims] An insulating substrate having a circuit pattern formed on a main surface thereof and having at least one punched hole penetrating the main surface and the back surface; A base plate in contact with the lower surface of the substrate; and at least one base plate mounted on the base plate and exposed from the cutout hole provided in the insulating substrate, the upper surface of which is at substantially the same height as the main surface of the insulating substrate. A heat spreader; a packaged semiconductor device having electrical terminals extending substantially horizontally from the bottom surface of the package, mounted on an upper surface of the at least one heat spreader, and having the circuit pattern and the electrical terminals on the insulating substrate; And at least one semiconductor device that is electrically connected to form a power amplification circuit, wherein the base plate Fine said at least one heat spreader, the power amplifier module are formed of a material having a thermal conductivity greater than the material of the insulating substrate. 2. The power amplification module according to claim 1, wherein a constituent material of the at least one heat spreader is Cu or CuW. 3. The base plate is made of Cu
The power amplification module according to claim 1, wherein the power amplification module is an FeNi alloy. 4. The power amplification module according to claim 1, further comprising a lid that houses the insulating substrate therein and is fitted to the base plate. 5. The semiconductor device according to claim 1, further comprising a plurality of lead terminals fixed to an end of the insulating substrate, the plurality of lead terminals having feet bent to the bottom side of the insulating substrate, wherein the base plate contacts the lead terminals. 2. The power amplification module according to claim 1, wherein an amount by which the insulating substrate is lifted due to bending of the foot portion is substantially equal to a thickness of the base plate so as not to adhere to the insulating substrate.