JPH1050717A - Substrate heating apparatus - Google Patents
Substrate heating apparatusInfo
- Publication number
- JPH1050717A JPH1050717A JP20000996A JP20000996A JPH1050717A JP H1050717 A JPH1050717 A JP H1050717A JP 20000996 A JP20000996 A JP 20000996A JP 20000996 A JP20000996 A JP 20000996A JP H1050717 A JPH1050717 A JP H1050717A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- heating
- temperature
- heater
- holding plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、製造工程中におけ
る基板処理のために液晶パネル基板または半導体基板を
加熱するもので、特に基板全体をほぼ均一な温度に加熱
することができる基板加熱装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for heating a liquid crystal panel substrate or a semiconductor substrate for processing a substrate during a manufacturing process, and more particularly to a substrate heating apparatus capable of heating the entire substrate to a substantially uniform temperature. Things.
【0002】[0002]
【従来の技術】液晶パネル基板または半導体基板を加熱
する場合、図11に示すように、基板51を抵抗線ヒー
ター53が埋め込まれた平板状の基板保持板52上に載
置し、基板51の下面を加熱する基板加熱装置が用いら
れている。2. Description of the Related Art When heating a liquid crystal panel substrate or a semiconductor substrate, as shown in FIG. 11, a substrate 51 is placed on a flat substrate holding plate 52 in which a resistance wire heater 53 is embedded. A substrate heating device for heating the lower surface is used.
【0003】基板51上へ種々の薄膜を形成する際に、
均一な膜質及び膜厚を得るためには、基板51の加熱温
度は重要なパラメーターの一つであるため、温度センサ
ー55から基板51の温度を電力制御装置54にフィー
ドバックし、加熱温度を制御している。When forming various thin films on the substrate 51,
In order to obtain uniform film quality and film thickness, the heating temperature of the substrate 51 is one of the important parameters. Therefore, the temperature of the substrate 51 is fed back from the temperature sensor 55 to the power control device 54 to control the heating temperature. ing.
【0004】[0004]
【発明が解決しようとする課題】しかしながら、前述し
た基板加熱装置では、基板の周縁部からの放熱が大きい
ため、基板の周縁部の温度が中央部の温度よりも低くな
ってしまう。したがって、基板全体を均一な温度に加熱
するためには、抵抗線ヒーターの配線パターン及び埋め
込み方法等を工夫する必要があり、装置の設計及び製作
が困難なものとなる。However, in the above-described substrate heating apparatus, since the heat radiation from the peripheral portion of the substrate is large, the temperature of the peripheral portion of the substrate becomes lower than the temperature of the central portion. Therefore, in order to heat the entire substrate to a uniform temperature, it is necessary to devise the wiring pattern and the embedding method of the resistance wire heater, and it becomes difficult to design and manufacture the device.
【0005】また、基板全体を均一な温度に加熱するた
めに、抵抗線ヒーターの配線パターン及び埋め込み方法
等を工夫した場合であっても、基板の周縁部からの放熱
を避けることはできないため、基板の周縁部の温度が中
央部の温度よりも低くなり、基板面内での温度のばらつ
きが生じる。Further, even if the wiring pattern and the embedding method of the resistance wire heater are devised in order to heat the entire substrate to a uniform temperature, heat radiation from the peripheral edge of the substrate cannot be avoided. The temperature of the peripheral portion of the substrate becomes lower than the temperature of the central portion, causing temperature variations within the substrate surface.
【0006】この基板面内での温度のばらつきが大きい
場合、基板上に形成された半導体膜及び絶縁膜等の薄膜
の膜質、膜厚、エッチングレート、組成比及び基板への
付着強度等が基板面内で異なり、後工程での不具合の発
生及び品質ばらつき等の原因となる。さらに、基板が大
型化することに伴い、基板面内での温度のばらつきも大
きくなる。When the temperature variation in the substrate surface is large, the quality, thickness, etching rate, composition ratio, adhesion strength to the substrate, etc. of the thin films such as the semiconductor film and the insulating film formed on the substrate are determined. It is different in the plane, and causes a defect in a post-process and a variation in quality. Further, as the size of the substrate increases, the temperature variation within the substrate surface also increases.
【0007】本発明は、以上のような従来の問題点に鑑
みなされたものであって、装置の設計及び製作が容易で
あり、基板全体をほぼ均一な温度に加熱することができ
る基板加熱装置を提供することを目的としている。SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned conventional problems, and is a substrate heating apparatus which can easily design and manufacture the apparatus and can heat the entire substrate to a substantially uniform temperature. It is intended to provide.
【0008】[0008]
【課題を解決するための手段】前述した目的を達成する
ために、本発明の請求項1記載の基板加熱装置は、薄板
状の基板を加熱する基板加熱装置において、前記基板の
下面及び端面を加熱することを特徴としている。According to a first aspect of the present invention, there is provided a substrate heating apparatus for heating a thin plate-like substrate. It is characterized by heating.
【0009】請求項2記載の基板加熱装置は、薄板状の
基板を加熱する基板加熱装置において、前記基板の下面
及び上面の周縁部を加熱することを特徴としている。According to a second aspect of the present invention, in the substrate heating apparatus for heating a thin plate-shaped substrate, the lower edge and the upper edge of the substrate are heated.
【0010】請求項3記載の基板加熱装置は、薄板状の
基板を加熱する基板加熱装置において、前記基板の下
面、端面及び上面の周縁部を加熱することを特徴として
いる。According to a third aspect of the present invention, there is provided a substrate heating apparatus for heating a thin substrate, wherein the lower surface, the end surface, and the peripheral portion of the upper surface of the substrate are heated.
【0011】本発明の基板加熱装置によれば、薄板状の
基板を加熱する基板加熱装置において、前記基板の下面
及び端面を加熱することより、基板の周縁部からの放熱
を防ぐことができ、基板全体をほぼ均一な温度に加熱
し、基板面内での温度のばらつきを小さくすることがで
きる。According to the substrate heating apparatus of the present invention, in the substrate heating apparatus for heating a thin substrate, heat can be prevented from being released from the peripheral edge of the substrate by heating the lower surface and the end surface of the substrate. By heating the entire substrate to a substantially uniform temperature, it is possible to reduce temperature variations in the substrate surface.
【0012】さらに、基板の下面と端面とで、温度セン
サー及び電力制御装置を別々に設けることにより、基板
の周縁部の加熱温度と中央部の加熱温度とを別々に制御
することができ、基板全体をほぼ均一な温度に加熱し、
基板面内での温度のばらつきを一段と小さくすることが
できる。Further, by separately providing the temperature sensor and the power control device on the lower surface and the end surface of the substrate, the heating temperature of the peripheral portion of the substrate and the heating temperature of the central portion can be controlled separately. Heat the whole to almost uniform temperature,
Variations in temperature in the plane of the substrate can be further reduced.
【0013】また、薄板状の基板を加熱する基板加熱装
置において、前記基板の下面及び上面の周縁部を加熱す
ることにより、基板の周縁部からの放熱を防ぐことがで
き、基板全体をほぼ均一な温度に加熱し、基板面内での
温度のばらつきを小さくすることができる。Further, in a substrate heating apparatus for heating a thin substrate, heat can be prevented from being radiated from the peripheral portion of the substrate by heating the peripheral portions of the lower surface and the upper surface of the substrate, so that the entire substrate can be made substantially uniform. Heating to an appropriate temperature, and the temperature variation in the substrate surface can be reduced.
【0014】さらに、基板の下面と上面の周縁部とで、
温度センサー及び電力制御装置を別々に設けることによ
り、基板の周縁部の加熱温度と中央部の加熱温度とを別
々に制御することができ、基板全体をほぼ均一な温度に
加熱し、基板面内での温度のばらつきを一段と小さくす
ることができる。Further, the lower surface of the substrate and the peripheral portion of the upper surface,
By separately providing the temperature sensor and the power control device, the heating temperature of the peripheral portion of the substrate and the heating temperature of the central portion can be separately controlled, and the entire substrate can be heated to a substantially uniform temperature, and the temperature within the substrate surface can be increased. Temperature fluctuations can be further reduced.
【0015】さらに、基板の上面の周縁部を加熱するた
めの基板保持板で基板を押さえ付けることにより、基板
と基板保持板とを密接させることができるため、基板全
体をほぼ均一な温度に加熱し、基板面内での温度のばら
つきをより一層小さくすることができる。Further, by pressing the substrate with a substrate holding plate for heating the peripheral portion of the upper surface of the substrate, the substrate and the substrate holding plate can be brought into close contact with each other, so that the entire substrate is heated to a substantially uniform temperature. However, it is possible to further reduce the temperature variation in the substrate surface.
【0016】また、薄板状の基板を加熱する基板加熱装
置において、前記基板の下面、端面及び上面の周縁部を
加熱することにより、基板の周縁部からの放熱を一段と
防ぐことができ、基板全体をほぼ均一な温度に加熱し、
基板面内での温度のばらつきを一段と小さくすることが
できる。Further, in the substrate heating apparatus for heating a thin substrate, by heating the lower surface, the end surface and the peripheral portion of the upper surface of the substrate, heat radiation from the peripheral portion of the substrate can be further prevented, and the entire substrate can be prevented. Is heated to a substantially uniform temperature,
Variations in temperature in the plane of the substrate can be further reduced.
【0017】さらに、基板の下面と端面及び上面の周縁
部とで、温度センサー及び電力制御装置を別々に設ける
ことにより、基板の周縁部の加熱温度と中央部の加熱温
度とを別々に制御することができ、基板全体をほぼ均一
な温度に加熱し、基板面内での温度のばらつきを一段と
小さくすることができる。Further, by separately providing a temperature sensor and a power control device on the lower surface of the substrate, the end surface and the peripheral portion of the upper surface, the heating temperature of the peripheral portion of the substrate and the heating temperature of the central portion are separately controlled. Thus, the entire substrate can be heated to a substantially uniform temperature, and the temperature variation in the substrate surface can be further reduced.
【0018】さらに、基板の端面及び上面の周縁部を加
熱するための基板保持板で基板を押さえ付けることによ
り、基板と基板保持板とを密接させることができるた
め、基板全体をほぼ均一な温度に加熱し、基板面内での
温度のばらつきをより一層小さくすることができる。Further, the substrate and the substrate holding plate can be brought into close contact with each other by pressing the substrate with the substrate holding plate for heating the peripheral surface of the end surface and the upper surface of the substrate. , The temperature variation in the substrate surface can be further reduced.
【0019】[0019]
【発明の実施の形態】本発明の実施の形態について、図
1乃至図11を用いて説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described with reference to FIGS.
【0020】(実施の形態1)図1乃至図4を用いて、
本発明の実施の形態1について説明する。図1は本発明
の実施の形態1に係わる基板加熱装置を示す概念図、図
2は基板温度の測定点を示す説明図、図3は図2のA−
A線における実施の形態1での基板面内の温度ばらつき
を示す説明図、図4は図2のB−B線における実施の形
態1での基板面内の温度ばらつきを示す説明図である。(Embodiment 1) Referring to FIGS. 1 to 4,
Embodiment 1 of the present invention will be described. FIG. 1 is a conceptual diagram showing a substrate heating apparatus according to Embodiment 1 of the present invention, FIG. 2 is an explanatory diagram showing measurement points of the substrate temperature, and FIG.
FIG. 4 is an explanatory diagram showing a temperature variation in the substrate surface in the first embodiment along the line A, and FIG. 4 is an explanatory diagram showing a temperature variation in the substrate surface in the first embodiment along the line BB in FIG.
【0021】図1に示すように、液晶パネル基板である
基板1を例えばアルミニウムからなる基板下面保持板2
上に載置し、基板1の端面を例えばアルミニウムからな
る基板端面保持板12で保持する。As shown in FIG. 1, a substrate 1 which is a liquid crystal panel substrate is replaced with a substrate lower surface holding plate 2 made of, for example, aluminum.
The substrate 1 is placed on the substrate, and the end surface of the substrate 1 is held by a substrate end surface holding plate 12 made of, for example, aluminum.
【0022】基板下面保持板2には、抵抗線ヒーターで
ある基板下面用ヒーター3が基板下面保持板2と電気的
に絶縁状態で埋め込まれ、基板下面用ヒーター3は、基
板下面用電力制御装置4と電気的に接続され、基板下面
用電力制御装置4から電力を供給されて基板1を加熱す
る。基板下面用電力制御装置4には、クロメルアルメル
熱電対からなる基板下面用温度センサー5が電気的に接
続され、フィードバックされる基板1の温度によって基
板下面用ヒーター3に供給する電力を制御し、基板1の
加熱温度を制御する。A substrate lower surface heater 3, which is a resistance wire heater, is embedded in the substrate lower surface holding plate 2 in an electrically insulated state from the substrate lower surface holding plate 2, and the substrate lower surface heater 3 is a power control device for the substrate lower surface. The substrate 1 is electrically connected to the substrate 1 and is supplied with electric power from the substrate lower surface power controller 4 to heat the substrate 1. The substrate lower surface power controller 4 is electrically connected to a substrate lower surface temperature sensor 5 composed of a chromel alumel thermocouple, and controls the power supplied to the substrate lower surface heater 3 according to the temperature of the substrate 1 fed back. The heating temperature of the substrate 1 is controlled.
【0023】基板端面保持板12には、抵抗線ヒーター
である基板端面用ヒーター13が基板端面保持板12と
電気的に絶縁状態で埋め込まれ、基板端面用ヒーター1
3は、基板端面用電力制御装置14と電気的に接続さ
れ、基板端面用電力制御装置14から電力を供給されて
基板1を加熱する。基板端面用電力制御装置14には、
クロメルアルメル熱電対からなる基板端面用温度センサ
ー15が電気的に接続され、フィードバックされる基板
1の温度によって基板端面用ヒーター13に供給する電
力を制御し、基板1の加熱温度を制御する。A substrate end surface heater 13 which is a resistance wire heater is embedded in the substrate end surface holding plate 12 while being electrically insulated from the substrate end surface holding plate 12.
The substrate 3 is electrically connected to the power control device 14 for the substrate end surface, and is supplied with power from the power control device 14 for the substrate end surface to heat the substrate 1. The power control device 14 for the substrate end face includes:
A substrate end surface temperature sensor 15 composed of a chromel alumel thermocouple is electrically connected, and the power supplied to the substrate end surface heater 13 is controlled based on the temperature of the substrate 1 that is fed back to control the substrate 1 heating temperature.
【0024】このような基板加熱装置により、基板1と
して400×500×1.1mmのガラスを用い、基板
1が400℃となるように加熱を行い、図2に示すよう
に、基板1の中心から50mm間隔で基板1の温度を測
定し、その結果を図3及び図4に示す。図2乃至図4に
おけるa〜oは、基板1の温度の測定点を示している。
また、図3及び図4には、実施の形態1と同様に、同じ
サイズの基板1を従来の基板加熱装置を用いて加熱した
場合についての結果も示してある。Using such a substrate heating apparatus, glass of 400 × 500 × 1.1 mm is used as the substrate 1, and the substrate 1 is heated to 400 ° C., and as shown in FIG. The temperature of the substrate 1 was measured at an interval of 50 mm from, and the results are shown in FIGS. A to o in FIGS. 2 to 4 indicate measurement points of the temperature of the substrate 1.
FIGS. 3 and 4 also show the results when the substrate 1 of the same size is heated using a conventional substrate heating device, as in the first embodiment.
【0025】図3及び図4に示すように、本発明の基板
加熱装置を用いれば、基板1面内での温度のばらつきを
小さくすることができる。As shown in FIGS. 3 and 4, the use of the substrate heating apparatus of the present invention makes it possible to reduce the temperature variation within the surface of the substrate 1.
【0026】尚、本発明の基板加熱装置においては、基
板下面用ヒーター3及び基板端面用ヒーター13は、例
えばハロゲンランプを用いた赤外線加熱方式であっても
かまわない。In the substrate heating apparatus of the present invention, the heater 3 for the lower surface of the substrate and the heater 13 for the end surface of the substrate may be of an infrared heating type using, for example, a halogen lamp.
【0027】(実施の形態2)図2及び図5乃至図7を
用いて、本発明の実施の形態2について説明する。図5
は本発明の実施の形態2に係わる基板加熱装置を示す概
念図、図6は図2のA−A線における実施の形態2での
基板面内の温度ばらつきを示す説明図、図7は図2のB
−B線における実施の形態2での基板面内の温度ばらつ
きを示す説明図である。(Embodiment 2) Embodiment 2 of the present invention will be described with reference to FIG. 2 and FIGS. FIG.
FIG. 6 is a conceptual diagram showing a substrate heating apparatus according to a second embodiment of the present invention, FIG. 6 is an explanatory diagram showing a temperature variation in the substrate surface along the line AA in FIG. 2 in the second embodiment, and FIG. 2 B
FIG. 11 is an explanatory diagram illustrating temperature variations in the substrate surface in the second embodiment along line −B.
【0028】図5に示すように、液晶パネル基板である
基板1を例えばアルミニウムからなる基板下面保持板2
上に載置し、基板1の上面の周縁部を例えばアルミニウ
ムからなる基板上面周縁部保持板22で保持する。As shown in FIG. 5, a substrate 1 which is a liquid crystal panel substrate is replaced with a substrate lower surface holding plate 2 made of, for example, aluminum.
The substrate 1 is placed on the upper surface, and the peripheral edge of the upper surface of the substrate 1 is held by a substrate upper edge retaining plate 22 made of, for example, aluminum.
【0029】基板上面周縁部保持板22で基板1を基板
下面保持板2に押さえ付けることにより、基板1と基板
下面保持板2とを密接させることができるため、加熱効
率が良くなるとともに、基板1全体をほぼ均一に加熱す
ることができる。When the substrate 1 is pressed against the substrate lower surface holding plate 2 by the substrate upper surface peripheral portion holding plate 22, the substrate 1 and the substrate lower surface holding plate 2 can be brought into close contact with each other. 1 can be heated substantially uniformly.
【0030】基板下面保持板2には、抵抗線ヒーターで
ある基板下面用ヒーター3が基板下面保持板2と電気的
に絶縁状態で埋め込まれ、基板下面用ヒーター3は、基
板下面用電力制御装置4と電気的に接続され、基板下面
用電力制御装置4から電力を供給されて基板1を加熱す
る。基板下面用電力制御装置4には、クロメルアルメル
熱電対からなる基板下面用温度センサー5が電気的に接
続され、フィードバックされる基板1の温度によって基
板下面用ヒーター3に供給する電力を制御し、基板1の
加熱温度を制御する。A substrate lower surface heater 3 which is a resistance wire heater is embedded in the substrate lower surface holding plate 2 in an electrically insulated state from the substrate lower surface holding plate 2, and the substrate lower surface heater 3 is a power control device for the substrate lower surface. The substrate 1 is electrically connected to the substrate 1 and is supplied with electric power from the substrate lower surface power controller 4 to heat the substrate 1. The substrate lower surface power controller 4 is electrically connected to a substrate lower surface temperature sensor 5 composed of a chromel alumel thermocouple, and controls the power supplied to the substrate lower surface heater 3 according to the temperature of the substrate 1 fed back. The heating temperature of the substrate 1 is controlled.
【0031】基板上面周縁部保持板22には、抵抗線ヒ
ーターである基板上面周縁部用ヒーター23が基板上面
周縁部保持板22と電気的に絶縁状態で埋め込まれ、基
板上面周縁部用ヒーター23は、基板上面周縁部用電力
制御装置24と電気的に接続され、基板上面周縁部用電
力制御装置24から電力を供給されて基板1を加熱す
る。基板上面周縁部用電力制御装置24には、クロメル
アルメル熱電対からなる基板上面周縁部用温度センサー
25が電気的に接続され、フィードバックされる基板1
の温度によって基板上面周縁部用ヒーター23に供給す
る電力を制御し、基板1の加熱温度を制御する。A heater 23 for the upper edge of the substrate, which is a resistance wire heater, is embedded in the upper edge holder 22 of the substrate in a state of being electrically insulated from the upper edge holder 22 of the substrate. Is electrically connected to the power control device 24 for the peripheral portion of the upper surface of the substrate, and is supplied with power from the power control device 24 for the peripheral portion of the upper surface of the substrate to heat the substrate 1. The substrate upper surface peripheral portion power control device 24 is electrically connected to a substrate upper surface peripheral portion temperature sensor 25 composed of a chromel alumel thermocouple, and is fed back to the substrate 1.
The power supplied to the substrate top peripheral edge heater 23 is controlled by the temperature of the substrate 1 to control the heating temperature of the substrate 1.
【0032】このような基板加熱装置により、基板1と
して400×500×1.1mmのガラスを用い、基板
1が400℃となるように加熱を行い、図2に示すよう
に、基板1の中心から50mm間隔で基板1の温度を測
定し、その結果を図6及び図7に示す。図6及び図7に
おけるa〜oは、基板1の温度の測定点を示している。
また、図6及び図7には、実施の形態2と同様に、同じ
サイズの基板1を従来の基板加熱装置を用いて加熱した
場合についての結果も示してある。With such a substrate heating device, glass of 400 × 500 × 1.1 mm is used as the substrate 1 and the substrate 1 is heated to 400 ° C., and as shown in FIG. The temperature of the substrate 1 was measured at intervals of 50 mm from, and the results are shown in FIGS. 6 and 7. 6 to 7 indicate measurement points of the temperature of the substrate 1.
FIGS. 6 and 7 also show the results when the substrate 1 of the same size is heated using a conventional substrate heating device, as in the second embodiment.
【0033】図6及び図7に示すように、本発明の基板
加熱装置を用いれば、基板1面内での温度のばらつきを
実施の形態1よりもさらに小さくすることができる。As shown in FIGS. 6 and 7, the use of the substrate heating apparatus of the present invention makes it possible to further reduce the temperature variation within the surface of the substrate 1 as compared with the first embodiment.
【0034】尚、本発明の基板加熱装置においては、基
板下面用ヒーター3及び基板上面周縁部用ヒーター23
は、例えばハロゲンランプを用いた赤外線加熱方式であ
ってもかまわない。In the substrate heating apparatus of the present invention, the heater 3 for the lower surface of the substrate and the heater 23 for the peripheral portion of the upper surface of the substrate are provided.
May be, for example, an infrared heating system using a halogen lamp.
【0035】(実施の形態3)図2及び図8乃至図10
を用いて、本発明の実施の形態3について説明する。図
8は本発明の実施の形態3に係わる基板加熱装置を示す
概念図、図9は図2のA−A線における実施の形態3で
の基板面内の温度ばらつきを示す説明図、図10は図2
のB−B線における実施の形態3での基板面内の温度ば
らつきを示す説明図である。(Embodiment 3) FIGS. 2 and 8 to 10
The third embodiment of the present invention will be described with reference to FIG. FIG. 8 is a conceptual diagram showing a substrate heating apparatus according to the third embodiment of the present invention, FIG. 9 is an explanatory diagram showing temperature variations in the substrate surface along the line AA in FIG. Figure 2
FIG. 13 is an explanatory diagram showing temperature variations in the substrate surface in the third embodiment along line BB of FIG.
【0036】図8に示すように、液晶パネル基板である
基板1を例えばアルミニウムからなる基板下面保持板2
上に載置し、基板1の端面及び上面の周縁部を例えばア
ルミニウムからなる基板周縁部保持板32で保持する。As shown in FIG. 8, a substrate 1 which is a liquid crystal panel substrate is replaced with a substrate lower surface holding plate 2 made of, for example, aluminum.
The substrate 1 is placed on the upper surface, and the edges of the end surface and the upper surface of the substrate 1 are held by a substrate edge holding plate 32 made of, for example, aluminum.
【0037】基板周縁部保持板32で基板1を基板下面
保持板2に押さえ付けることにより、基板1と基板下面
保持板2とを密接させることができるため、加熱効率が
良くなるとともに、基板1全体をほぼ均一に加熱するこ
とができる。By pressing the substrate 1 against the substrate lower surface holding plate 2 by the substrate peripheral portion holding plate 32, the substrate 1 and the substrate lower surface holding plate 2 can be brought into close contact with each other. The whole can be heated almost uniformly.
【0038】基板下面保持板2には、抵抗線ヒーターで
ある基板下面用ヒーター3が基板下面保持板2と電気的
に絶縁状態で埋め込まれ、基板下面用ヒーター3は、基
板下面用電力制御装置4と電気的に接続され、基板下面
用電力制御装置4から電力を供給されて基板1を加熱す
る。基板下面用電力制御装置4には、クロメルアルメル
熱電対からなる基板下面用温度センサー5が電気的に接
続され、フィードバックされる基板1の温度によって基
板下面用ヒーター3に供給する電力を制御し、基板1の
加熱温度を制御する。A substrate lower surface heater 3, which is a resistance wire heater, is embedded in the substrate lower surface holding plate 2 in an electrically insulated state from the substrate lower surface holding plate 2, and the substrate lower surface heater 3 is a power control device for the substrate lower surface. The substrate 1 is electrically connected to the substrate 1 and is supplied with electric power from the substrate lower surface power controller 4 to heat the substrate 1. The substrate lower surface power controller 4 is electrically connected to a substrate lower surface temperature sensor 5 composed of a chromel alumel thermocouple, and controls the power supplied to the substrate lower surface heater 3 according to the temperature of the substrate 1 fed back. The heating temperature of the substrate 1 is controlled.
【0039】基板周縁部保持板32には、抵抗線ヒータ
ーである基板周縁部用ヒーター33が基板周縁部保持板
32と電気的に絶縁状態で埋め込まれ、基板周縁部用ヒ
ーター33は、基板周縁部用電力制御装置34と電気的
に接続され、基板周縁部用電力制御装置34から電力を
供給されて基板1を加熱する。基板周縁部用電力制御装
置34には、クロメルアルメル熱電対からなる基板周縁
部用温度センサー35が電気的に接続され、フィードバ
ックされる基板1の温度によって基板周縁部用ヒーター
33に供給する電力を制御し、基板1の加熱温度を制御
する。A substrate peripheral heater 33 as a resistance wire heater is embedded in the substrate peripheral holding plate 32 in an electrically insulated state from the substrate peripheral holding plate 32. The substrate 1 is heated by being electrically connected to the power control unit 34 and supplied with power from the power control unit 34. The substrate peripheral power controller 34 is electrically connected to a substrate peripheral temperature sensor 35 composed of a chromel alumel thermocouple, and supplies power supplied to the substrate peripheral heater 33 according to the temperature of the substrate 1 that is fed back. Controlling the heating temperature of the substrate 1.
【0040】このような基板加熱装置により、基板1と
して400×500×1.1mmのガラスを用い、基板
1が400℃となるように加熱を行い、図2に示すよう
に、基板1の中心から50mm間隔で基板1の温度を測
定し、その結果を図9及び図10に示す。図9及び図1
0におけるa〜oは、基板1の温度の測定点を示してい
る。また、図9及び図10には、実施の形態3と同様
に、同じサイズの基板1を従来の基板加熱装置を用いて
加熱した場合についての結果も示してある。With such a substrate heating device, glass of 400 × 500 × 1.1 mm is used as the substrate 1 and the substrate 1 is heated to 400 ° C., and as shown in FIG. The temperature of the substrate 1 was measured at intervals of 50 mm from. The results are shown in FIG. 9 and FIG. 9 and 1
0 to 0 indicate measurement points of the temperature of the substrate 1. FIGS. 9 and 10 also show the results when the substrate 1 of the same size is heated using a conventional substrate heating device, as in the third embodiment.
【0041】図9及び図10に示すように、本発明の基
板加熱装置を用いれば、基板1面内での温度のばらつき
を実施の形態1及び実施の形態2よりもさらに小さくす
ることができる。As shown in FIGS. 9 and 10, the use of the substrate heating apparatus of the present invention makes it possible to further reduce the temperature variation within the surface of the substrate 1 as compared with the first and second embodiments. .
【0042】尚、本発明の基板加熱装置においては、基
板下面用ヒーター3及び基板周縁部用ヒーター33は、
例えばハロゲンランプを用いた赤外線加熱方式であって
もかまわない。In the substrate heating apparatus of the present invention, the heater 3 for the lower surface of the substrate and the heater 33 for the peripheral portion of the substrate
For example, an infrared heating method using a halogen lamp may be used.
【0043】[0043]
【発明の効果】以上の説明のように、本発明の基板加熱
装置によれば、薄板状の基板を加熱する基板加熱装置に
おいて、前記基板の下面及び端面を加熱することより、
基板面内での温度のばらつきを小さくすることができる
ため、基板が大型化した場合であっても、基板上に形成
された半導体膜及び絶縁膜等の薄膜の膜質、膜厚、エッ
チングレート、組成比及び基板への付着強度等を均一に
し、後工程での不具合の発生及び品質ばらつき等を防止
することができる。As described above, according to the substrate heating apparatus of the present invention, in the substrate heating apparatus for heating a thin substrate, the lower surface and the end surface of the substrate are heated.
Since the temperature variation in the substrate surface can be reduced, even when the substrate is enlarged, the film quality, thickness, etching rate, and the like of the thin films such as the semiconductor film and the insulating film formed on the substrate are reduced. The composition ratio, the adhesion strength to the substrate, and the like can be made uniform, and the occurrence of defects and quality variations in the subsequent steps can be prevented.
【0044】さらに、基板の下面と端面とで、温度セン
サー及び電力制御装置を別々に設けることにより、基板
面内での温度のばらつきを一段と小さくすることができ
る。Further, by separately providing the temperature sensor and the power control device on the lower surface and the end surface of the substrate, it is possible to further reduce the variation in temperature in the substrate surface.
【0045】また、薄板状の基板を加熱する基板加熱装
置において、前記基板の下面及び上面の周縁部を加熱す
ることにより、基板面内での温度のばらつきを小さくす
ることができるため、基板が大型化した場合であって
も、基板上に形成された半導体膜及び絶縁膜等の薄膜の
膜質、膜厚、エッチングレート、組成比及び基板への付
着強度等を均一にし、後工程での不具合の発生及び品質
ばらつき等を防止することができる。Further, in a substrate heating apparatus for heating a thin plate-shaped substrate, by heating the lower edge and the peripheral edge of the upper surface of the substrate, it is possible to reduce the variation in temperature within the substrate surface. Even when the size is increased, the quality, thickness, etching rate, composition ratio, adhesion strength to the substrate, etc. of the thin films such as the semiconductor film and the insulating film formed on the substrate are made uniform, and defects in the subsequent process are caused. Generation and quality variation can be prevented.
【0046】さらに、基板の下面と上面の周縁部とで、
温度センサー及び電力制御装置を別々に設けることによ
り、基板面内での温度のばらつきを一段と小さくするこ
とができる。Further, the lower surface of the substrate and the peripheral edge of the upper surface are:
By separately providing the temperature sensor and the power control device, it is possible to further reduce the variation in temperature in the substrate surface.
【0047】さらに、基板の上面の周縁部を加熱するた
めの基板保持板で基板を押さえ付けることにより、基板
面内での温度のばらつきをより一層小さくすることがで
きる。Further, by pressing the substrate with a substrate holding plate for heating the peripheral portion of the upper surface of the substrate, the temperature variation in the substrate surface can be further reduced.
【0048】また、薄板状の基板を加熱する基板加熱装
置において、前記基板の下面、端面及び上面の周縁部を
加熱することにより、基板面内での温度のばらつきを一
段と小さくすることができるため、基板が大型化した場
合であっても、基板上に形成された半導体膜及び絶縁膜
等の薄膜の膜質、膜厚、エッチングレート、組成比及び
基板への付着強度等を均一にし、後工程での不具合の発
生及び品質ばらつき等を防止することができる。Further, in a substrate heating apparatus for heating a thin plate-like substrate, by heating the lower surface, the end surface and the peripheral edge of the upper surface of the substrate, it is possible to further reduce the temperature variation in the substrate surface. Even if the size of the substrate is increased, the quality of the thin films such as the semiconductor film and the insulating film formed on the substrate, the film thickness, the etching rate, the composition ratio, the adhesion strength to the substrate, etc. are made uniform, and the post-process is performed. In this way, it is possible to prevent the occurrence of defects and quality variations.
【0049】さらに、基板の下面と端面及び上面の周縁
部とで、温度センサー及び電力制御装置を別々に設ける
ことにより、基板面内での温度のばらつきを一段と小さ
くすることができる。Further, by separately providing the temperature sensor and the power control device on the lower surface of the substrate, the end surface, and the peripheral portion of the upper surface, it is possible to further reduce the variation in temperature in the substrate surface.
【0050】さらに、基板の端面及び上面の周縁部を加
熱するための基板保持板で基板を押さえ付けることによ
り、基板面内での温度のばらつきをより一層小さくする
ことができる。Further, the temperature variation in the substrate surface can be further reduced by pressing the substrate with a substrate holding plate for heating the peripheral surface of the end surface and the upper surface of the substrate.
【図1】本発明の実施の形態1に係わる基板加熱装置を
示す概念図である。FIG. 1 is a conceptual diagram showing a substrate heating device according to a first embodiment of the present invention.
【図2】基板温度の測定点を示す説明図である。FIG. 2 is an explanatory diagram showing measurement points of a substrate temperature.
【図3】図2のA−A線における実施の形態1での基板
面内の温度ばらつきを示す説明図である。FIG. 3 is an explanatory diagram showing a temperature variation in a substrate surface in the first embodiment along line AA in FIG. 2;
【図4】図2のB−B線における実施の形態1での基板
面内の温度ばらつきを示す説明図である。FIG. 4 is an explanatory diagram showing a temperature variation in a substrate surface in the first embodiment along line BB in FIG. 2;
【図5】本発明の実施の形態2に係わる基板加熱装置を
示す概念図である。FIG. 5 is a conceptual diagram showing a substrate heating device according to a second embodiment of the present invention.
【図6】図2のA−A線における実施の形態2での基板
面内の温度ばらつきを示す説明図である。FIG. 6 is an explanatory diagram showing a temperature variation in a substrate surface in the second embodiment along line AA in FIG. 2;
【図7】図2のB−B線における実施の形態2での基板
面内の温度ばらつきを示す説明図である。FIG. 7 is an explanatory diagram showing a temperature variation in a substrate surface in the second embodiment along line BB in FIG. 2;
【図8】本発明の実施の形態3に係わる基板加熱装置を
示す概念図である。FIG. 8 is a conceptual diagram showing a substrate heating device according to a third embodiment of the present invention.
【図9】図2のA−A線における実施の形態3での基板
面内の温度ばらつきを示す説明図である。FIG. 9 is an explanatory diagram showing a temperature variation in a substrate surface in the third embodiment along line AA in FIG. 2;
【図10】図2のB−B線における実施の形態3での基
板面内の温度ばらつきを示す説明図である。FIG. 10 is an explanatory diagram showing a temperature variation in a substrate surface in the third embodiment along line BB in FIG. 2;
【図11】従来の基板加熱装置を示す概念図である。FIG. 11 is a conceptual diagram showing a conventional substrate heating device.
1 基板 2 基板下面保持板 3 基板下面用ヒーター 4 基板下面用電力制御装置 5 基板下面用温度センサー 12 基板端面保持板 13 基板端面用ヒーター 14 基板端面用電力制御装置 15 基板端面用温度センサー 22 基板上面周縁部保持板 23 基板上面周縁部用ヒーター 24 基板上面周縁部用電力制御装置 25 基板上面周縁部用温度センサー 32 基板周縁部保持板 33 基板周縁部用ヒーター 34 基板周縁部用電力制御装置 35 基板周縁部用温度センサー 51 基板 52 基板保持板 53 抵抗線ヒーター 54 電力制御装置 55 温度センサー DESCRIPTION OF SYMBOLS 1 Substrate 2 Substrate lower surface holding plate 3 Heater for lower surface of substrate 4 Power control device for lower surface of substrate 5 Temperature sensor for lower surface of substrate 12 Heater for lower surface of substrate 13 Heater for lower surface of substrate 14 Power control device for lower surface of substrate 15 Temperature sensor for lower surface of substrate 22 Substrate Upper surface peripheral portion holding plate 23 Heater for substrate upper surface peripheral portion 24 Power control device for substrate upper surface peripheral portion 25 Temperature sensor for substrate upper surface peripheral portion 32 Board peripheral portion holding plate 33 Heater for substrate peripheral portion 34 Power control device for substrate peripheral portion 35 Temperature sensor for substrate peripheral part 51 Substrate 52 Substrate holding plate 53 Resistance wire heater 54 Power control device 55 Temperature sensor
Claims (3)
おいて、前記基板の下面及び端面を加熱することを特徴
とする基板加熱装置。1. A substrate heating device for heating a thin substrate, wherein the lower surface and the end surface of the substrate are heated.
おいて、前記基板の下面及び上面の周縁部を加熱するこ
とを特徴とする基板加熱装置。2. A substrate heating apparatus for heating a thin plate-shaped substrate, wherein a lower edge and a peripheral edge of an upper surface of the substrate are heated.
おいて、前記基板の下面、端面及び上面の周縁部を加熱
することを特徴とする基板加熱装置。3. A substrate heating apparatus for heating a thin substrate, wherein the lower surface, the end surface, and the peripheral portion of the upper surface of the substrate are heated.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20000996A JPH1050717A (en) | 1996-07-30 | 1996-07-30 | Substrate heating apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20000996A JPH1050717A (en) | 1996-07-30 | 1996-07-30 | Substrate heating apparatus |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH1050717A true JPH1050717A (en) | 1998-02-20 |
Family
ID=16417283
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP20000996A Pending JPH1050717A (en) | 1996-07-30 | 1996-07-30 | Substrate heating apparatus |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH1050717A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007059262A (en) * | 2005-08-25 | 2007-03-08 | Hitachi High-Technologies Corp | Manufacturing apparatus of semiconductor substrate |
-
1996
- 1996-07-30 JP JP20000996A patent/JPH1050717A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007059262A (en) * | 2005-08-25 | 2007-03-08 | Hitachi High-Technologies Corp | Manufacturing apparatus of semiconductor substrate |
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