JPH1050717A - Substrate heating apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a structure heating apparatus easy in design and fabrication of the apparatus and capable of heating the entire substrate at approximately a uniform temp. SOLUTION: A substrate is laid on a substrate lower face holding plate 2, the end faces of the substrate are held with substrate end face holding plates 12. A substrate lower face heater 3 is buried in the plate 2 and fed with a power from a substrate lower end face power controller 4 to heat the substrate. A substrate lower face temp. sensor 5 is connected to the controller 4 to control the heating temp. according to the fed back substrate temp. Substrate end face heaters 13 are buried in the plates 12 and fed with a power from a substrate end face power controller 14 to heat the substrate 1. Substrate end face temp. sensors 15 are connected to the controller 14 to control the heating temp. according to the fed back substrate temp.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for heating a liquid crystal panel substrate or a semiconductor substrate for processing a substrate during a manufacturing process, and more particularly to a substrate heating apparatus capable of heating the entire substrate to a substantially uniform temperature. Things.

[0002]

2. Description of the Related Art When heating a liquid crystal panel substrate or a semiconductor substrate, as shown in FIG. 11, a substrate 51 is placed on a flat substrate holding plate 52 in which a resistance wire heater 53 is embedded. A substrate heating device for heating the lower surface is used.

When forming various thin films on the substrate 51,
In order to obtain uniform film quality and film thickness, the heating temperature of the substrate 51 is one of the important parameters. Therefore, the temperature of the substrate 51 is fed back from the temperature sensor 55 to the power control device 54 to control the heating temperature. ing.

[0004]

However, in the above-described substrate heating apparatus, since the heat radiation from the peripheral portion of the substrate is large, the temperature of the peripheral portion of the substrate becomes lower than the temperature of the central portion. Therefore, in order to heat the entire substrate to a uniform temperature, it is necessary to devise the wiring pattern and the embedding method of the resistance wire heater, and it becomes difficult to design and manufacture the device.

Further, even if the wiring pattern and the embedding method of the resistance wire heater are devised in order to heat the entire substrate to a uniform temperature, heat radiation from the peripheral edge of the substrate cannot be avoided. The temperature of the peripheral portion of the substrate becomes lower than the temperature of the central portion, causing temperature variations within the substrate surface.

When the temperature variation in the substrate surface is large, the quality, thickness, etching rate, composition ratio, adhesion strength to the substrate, etc. of the thin films such as the semiconductor film and the insulating film formed on the substrate are determined. It is different in the plane, and causes a defect in a post-process and a variation in quality. Further, as the size of the substrate increases, the temperature variation within the substrate surface also increases.

SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned conventional problems, and is a substrate heating apparatus which can easily design and manufacture the apparatus and can heat the entire substrate to a substantially uniform temperature. It is intended to provide.

[0008]

According to a first aspect of the present invention, there is provided a substrate heating apparatus for heating a thin plate-like substrate. It is characterized by heating.

According to a second aspect of the present invention, in the substrate heating apparatus for heating a thin plate-shaped substrate, the lower edge and the upper edge of the substrate are heated.

According to a third aspect of the present invention, there is provided a substrate heating apparatus for heating a thin substrate, wherein the lower surface, the end surface, and the peripheral portion of the upper surface of the substrate are heated.

According to the substrate heating apparatus of the present invention, in the substrate heating apparatus for heating a thin substrate, heat can be prevented from being released from the peripheral edge of the substrate by heating the lower surface and the end surface of the substrate. By heating the entire substrate to a substantially uniform temperature, it is possible to reduce temperature variations in the substrate surface.

Further, by separately providing the temperature sensor and the power control device on the lower surface and the end surface of the substrate, the heating temperature of the peripheral portion of the substrate and the heating temperature of the central portion can be controlled separately. Heat the whole to almost uniform temperature,
Variations in temperature in the plane of the substrate can be further reduced.

Further, in a substrate heating apparatus for heating a thin substrate, heat can be prevented from being radiated from the peripheral portion of the substrate by heating the peripheral portions of the lower surface and the upper surface of the substrate, so that the entire substrate can be made substantially uniform. Heating to an appropriate temperature, and the temperature variation in the substrate surface can be reduced.

Further, the lower surface of the substrate and the peripheral portion of the upper surface,
By separately providing the temperature sensor and the power control device, the heating temperature of the peripheral portion of the substrate and the heating temperature of the central portion can be separately controlled, and the entire substrate can be heated to a substantially uniform temperature, and the temperature within the substrate surface can be increased. Temperature fluctuations can be further reduced.

Further, by pressing the substrate with a substrate holding plate for heating the peripheral portion of the upper surface of the substrate, the substrate and the substrate holding plate can be brought into close contact with each other, so that the entire substrate is heated to a substantially uniform temperature. However, it is possible to further reduce the temperature variation in the substrate surface.

Further, in the substrate heating apparatus for heating a thin substrate, by heating the lower surface, the end surface and the peripheral portion of the upper surface of the substrate, heat radiation from the peripheral portion of the substrate can be further prevented, and the entire substrate can be prevented. Is heated to a substantially uniform temperature,
Variations in temperature in the plane of the substrate can be further reduced.

Further, by separately providing a temperature sensor and a power control device on the lower surface of the substrate, the end surface and the peripheral portion of the upper surface, the heating temperature of the peripheral portion of the substrate and the heating temperature of the central portion are separately controlled. Thus, the entire substrate can be heated to a substantially uniform temperature, and the temperature variation in the substrate surface can be further reduced.

Further, the substrate and the substrate holding plate can be brought into close contact with each other by pressing the substrate with the substrate holding plate for heating the peripheral surface of the end surface and the upper surface of the substrate. , The temperature variation in the substrate surface can be further reduced.

[0019]

DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described with reference to FIGS.

(Embodiment 1) Referring to FIGS. 1 to 4,
Embodiment 1 of the present invention will be described. FIG. 1 is a conceptual diagram showing a substrate heating apparatus according to Embodiment 1 of the present invention, FIG. 2 is an explanatory diagram showing measurement points of the substrate temperature, and FIG.
FIG. 4 is an explanatory diagram showing a temperature variation in the substrate surface in the first embodiment along the line A, and FIG. 4 is an explanatory diagram showing a temperature variation in the substrate surface in the first embodiment along the line BB in FIG.

As shown in FIG. 1, a substrate 1 which is a liquid crystal panel substrate is replaced with a substrate lower surface holding plate 2 made of, for example, aluminum.
The substrate 1 is placed on the substrate, and the end surface of the substrate 1 is held by a substrate end surface holding plate 12 made of, for example, aluminum.

A substrate lower surface heater 3, which is a resistance wire heater, is embedded in the substrate lower surface holding plate 2 in an electrically insulated state from the substrate lower surface holding plate 2, and the substrate lower surface heater 3 is a power control device for the substrate lower surface. The substrate 1 is electrically connected to the substrate 1 and is supplied with electric power from the substrate lower surface power controller 4 to heat the substrate 1. The substrate lower surface power controller 4 is electrically connected to a substrate lower surface temperature sensor 5 composed of a chromel alumel thermocouple, and controls the power supplied to the substrate lower surface heater 3 according to the temperature of the substrate 1 fed back. The heating temperature of the substrate 1 is controlled.

A substrate end surface heater 13 which is a resistance wire heater is embedded in the substrate end surface holding plate 12 while being electrically insulated from the substrate end surface holding plate 12.
The substrate 3 is electrically connected to the power control device 14 for the substrate end surface, and is supplied with power from the power control device 14 for the substrate end surface to heat the substrate 1. The power control device 14 for the substrate end face includes:
A substrate end surface temperature sensor 15 composed of a chromel alumel thermocouple is electrically connected, and the power supplied to the substrate end surface heater 13 is controlled based on the temperature of the substrate 1 that is fed back to control the substrate 1 heating temperature.

Using such a substrate heating apparatus, glass of 400 × 500 × 1.1 mm is used as the substrate 1, and the substrate 1 is heated to 400 ° C., and as shown in FIG. The temperature of the substrate 1 was measured at an interval of 50 mm from, and the results are shown in FIGS. A to o in FIGS. 2 to 4 indicate measurement points of the temperature of the substrate 1.
FIGS. 3 and 4 also show the results when the substrate 1 of the same size is heated using a conventional substrate heating device, as in the first embodiment.

As shown in FIGS. 3 and 4, the use of the substrate heating apparatus of the present invention makes it possible to reduce the temperature variation within the surface of the substrate 1.

In the substrate heating apparatus of the present invention, the heater 3 for the lower surface of the substrate and the heater 13 for the end surface of the substrate may be of an infrared heating type using, for example, a halogen lamp.

(Embodiment 2) Embodiment 2 of the present invention will be described with reference to FIG. 2 and FIGS. FIG.
FIG. 6 is a conceptual diagram showing a substrate heating apparatus according to a second embodiment of the present invention, FIG. 6 is an explanatory diagram showing a temperature variation in the substrate surface along the line AA in FIG. 2 in the second embodiment, and FIG. 2 B
FIG. 11 is an explanatory diagram illustrating temperature variations in the substrate surface in the second embodiment along line −B.

As shown in FIG. 5, a substrate 1 which is a liquid crystal panel substrate is replaced with a substrate lower surface holding plate 2 made of, for example, aluminum.
The substrate 1 is placed on the upper surface, and the peripheral edge of the upper surface of the substrate 1 is held by a substrate upper edge retaining plate 22 made of, for example, aluminum.

When the substrate 1 is pressed against the substrate lower surface holding plate 2 by the substrate upper surface peripheral portion holding plate 22, the substrate 1 and the substrate lower surface holding plate 2 can be brought into close contact with each other. 1 can be heated substantially uniformly.

A substrate lower surface heater 3 which is a resistance wire heater is embedded in the substrate lower surface holding plate 2 in an electrically insulated state from the substrate lower surface holding plate 2, and the substrate lower surface heater 3 is a power control device for the substrate lower surface. The substrate 1 is electrically connected to the substrate 1 and is supplied with electric power from the substrate lower surface power controller 4 to heat the substrate 1. The substrate lower surface power controller 4 is electrically connected to a substrate lower surface temperature sensor 5 composed of a chromel alumel thermocouple, and controls the power supplied to the substrate lower surface heater 3 according to the temperature of the substrate 1 fed back. The heating temperature of the substrate 1 is controlled.

A heater 23 for the upper edge of the substrate, which is a resistance wire heater, is embedded in the upper edge holder 22 of the substrate in a state of being electrically insulated from the upper edge holder 22 of the substrate. Is electrically connected to the power control device 24 for the peripheral portion of the upper surface of the substrate, and is supplied with power from the power control device 24 for the peripheral portion of the upper surface of the substrate to heat the substrate 1. The substrate upper surface peripheral portion power control device 24 is electrically connected to a substrate upper surface peripheral portion temperature sensor 25 composed of a chromel alumel thermocouple, and is fed back to the substrate 1.
The power supplied to the substrate top peripheral edge heater 23 is controlled by the temperature of the substrate 1 to control the heating temperature of the substrate 1.

With such a substrate heating device, glass of 400 × 500 × 1.1 mm is used as the substrate 1 and the substrate 1 is heated to 400 ° C., and as shown in FIG. The temperature of the substrate 1 was measured at intervals of 50 mm from, and the results are shown in FIGS. 6 and 7. 6 to 7 indicate measurement points of the temperature of the substrate 1.
FIGS. 6 and 7 also show the results when the substrate 1 of the same size is heated using a conventional substrate heating device, as in the second embodiment.

As shown in FIGS. 6 and 7, the use of the substrate heating apparatus of the present invention makes it possible to further reduce the temperature variation within the surface of the substrate 1 as compared with the first embodiment.

In the substrate heating apparatus of the present invention, the heater 3 for the lower surface of the substrate and the heater 23 for the peripheral portion of the upper surface of the substrate are provided.
May be, for example, an infrared heating system using a halogen lamp.

(Embodiment 3) FIGS. 2 and 8 to 10
The third embodiment of the present invention will be described with reference to FIG. FIG. 8 is a conceptual diagram showing a substrate heating apparatus according to the third embodiment of the present invention, FIG. 9 is an explanatory diagram showing temperature variations in the substrate surface along the line AA in FIG. Figure 2
FIG. 13 is an explanatory diagram showing temperature variations in the substrate surface in the third embodiment along line BB of FIG.

As shown in FIG. 8, a substrate 1 which is a liquid crystal panel substrate is replaced with a substrate lower surface holding plate 2 made of, for example, aluminum.
The substrate 1 is placed on the upper surface, and the edges of the end surface and the upper surface of the substrate 1 are held by a substrate edge holding plate 32 made of, for example, aluminum.

By pressing the substrate 1 against the substrate lower surface holding plate 2 by the substrate peripheral portion holding plate 32, the substrate 1 and the substrate lower surface holding plate 2 can be brought into close contact with each other. The whole can be heated almost uniformly.

A substrate lower surface heater 3, which is a resistance wire heater, is embedded in the substrate lower surface holding plate 2 in an electrically insulated state from the substrate lower surface holding plate 2, and the substrate lower surface heater 3 is a power control device for the substrate lower surface. The substrate 1 is electrically connected to the substrate 1 and is supplied with electric power from the substrate lower surface power controller 4 to heat the substrate 1. The substrate lower surface power controller 4 is electrically connected to a substrate lower surface temperature sensor 5 composed of a chromel alumel thermocouple, and controls the power supplied to the substrate lower surface heater 3 according to the temperature of the substrate 1 fed back. The heating temperature of the substrate 1 is controlled.

A substrate peripheral heater 33 as a resistance wire heater is embedded in the substrate peripheral holding plate 32 in an electrically insulated state from the substrate peripheral holding plate 32. The substrate 1 is heated by being electrically connected to the power control unit 34 and supplied with power from the power control unit 34. The substrate peripheral power controller 34 is electrically connected to a substrate peripheral temperature sensor 35 composed of a chromel alumel thermocouple, and supplies power supplied to the substrate peripheral heater 33 according to the temperature of the substrate 1 that is fed back. Controlling the heating temperature of the substrate 1.

With such a substrate heating device, glass of 400 × 500 × 1.1 mm is used as the substrate 1 and the substrate 1 is heated to 400 ° C., and as shown in FIG. The temperature of the substrate 1 was measured at intervals of 50 mm from. The results are shown in FIG. 9 and FIG. 9 and 1
0 to 0 indicate measurement points of the temperature of the substrate 1. FIGS. 9 and 10 also show the results when the substrate 1 of the same size is heated using a conventional substrate heating device, as in the third embodiment.

As shown in FIGS. 9 and 10, the use of the substrate heating apparatus of the present invention makes it possible to further reduce the temperature variation within the surface of the substrate 1 as compared with the first and second embodiments. .

In the substrate heating apparatus of the present invention, the heater 3 for the lower surface of the substrate and the heater 33 for the peripheral portion of the substrate
For example, an infrared heating method using a halogen lamp may be used.

[0043]

As described above, according to the substrate heating apparatus of the present invention, in the substrate heating apparatus for heating a thin substrate, the lower surface and the end surface of the substrate are heated.
Since the temperature variation in the substrate surface can be reduced, even when the substrate is enlarged, the film quality, thickness, etching rate, and the like of the thin films such as the semiconductor film and the insulating film formed on the substrate are reduced. The composition ratio, the adhesion strength to the substrate, and the like can be made uniform, and the occurrence of defects and quality variations in the subsequent steps can be prevented.

Further, by separately providing the temperature sensor and the power control device on the lower surface and the end surface of the substrate, it is possible to further reduce the variation in temperature in the substrate surface.

Further, in a substrate heating apparatus for heating a thin plate-shaped substrate, by heating the lower edge and the peripheral edge of the upper surface of the substrate, it is possible to reduce the variation in temperature within the substrate surface. Even when the size is increased, the quality, thickness, etching rate, composition ratio, adhesion strength to the substrate, etc. of the thin films such as the semiconductor film and the insulating film formed on the substrate are made uniform, and defects in the subsequent process are caused. Generation and quality variation can be prevented.

Further, the lower surface of the substrate and the peripheral edge of the upper surface are:
By separately providing the temperature sensor and the power control device, it is possible to further reduce the variation in temperature in the substrate surface.

Further, by pressing the substrate with a substrate holding plate for heating the peripheral portion of the upper surface of the substrate, the temperature variation in the substrate surface can be further reduced.

Further, in a substrate heating apparatus for heating a thin plate-like substrate, by heating the lower surface, the end surface and the peripheral edge of the upper surface of the substrate, it is possible to further reduce the temperature variation in the substrate surface. Even if the size of the substrate is increased, the quality of the thin films such as the semiconductor film and the insulating film formed on the substrate, the film thickness, the etching rate, the composition ratio, the adhesion strength to the substrate, etc. are made uniform, and the post-process is performed. In this way, it is possible to prevent the occurrence of defects and quality variations.

Further, by separately providing the temperature sensor and the power control device on the lower surface of the substrate, the end surface, and the peripheral portion of the upper surface, it is possible to further reduce the variation in temperature in the substrate surface.

Further, the temperature variation in the substrate surface can be further reduced by pressing the substrate with a substrate holding plate for heating the peripheral surface of the end surface and the upper surface of the substrate.

[Brief description of the drawings]

FIG. 1 is a conceptual diagram showing a substrate heating device according to a first embodiment of the present invention.

FIG. 2 is an explanatory diagram showing measurement points of a substrate temperature.

FIG. 3 is an explanatory diagram showing a temperature variation in a substrate surface in the first embodiment along line AA in FIG. 2;

FIG. 4 is an explanatory diagram showing a temperature variation in a substrate surface in the first embodiment along line BB in FIG. 2;

FIG. 5 is a conceptual diagram showing a substrate heating device according to a second embodiment of the present invention.

FIG. 6 is an explanatory diagram showing a temperature variation in a substrate surface in the second embodiment along line AA in FIG. 2;

FIG. 7 is an explanatory diagram showing a temperature variation in a substrate surface in the second embodiment along line BB in FIG. 2;

FIG. 8 is a conceptual diagram showing a substrate heating device according to a third embodiment of the present invention.

FIG. 9 is an explanatory diagram showing a temperature variation in a substrate surface in the third embodiment along line AA in FIG. 2;

FIG. 10 is an explanatory diagram showing a temperature variation in a substrate surface in the third embodiment along line BB in FIG. 2;

FIG. 11 is a conceptual diagram showing a conventional substrate heating device.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Substrate 2 Substrate lower surface holding plate 3 Heater for lower surface of substrate 4 Power control device for lower surface of substrate 5 Temperature sensor for lower surface of substrate 12 Heater for lower surface of substrate 13 Heater for lower surface of substrate 14 Power control device for lower surface of substrate 15 Temperature sensor for lower surface of substrate 22 Substrate Upper surface peripheral portion holding plate 23 Heater for substrate upper surface peripheral portion 24 Power control device for substrate upper surface peripheral portion 25 Temperature sensor for substrate upper surface peripheral portion 32 Board peripheral portion holding plate 33 Heater for substrate peripheral portion 34 Power control device for substrate peripheral portion 35 Temperature sensor for substrate peripheral part 51 Substrate 52 Substrate holding plate 53 Resistance wire heater 54 Power control device 55 Temperature sensor

Claims (3)

[Claims] 1. A substrate heating device for heating a thin substrate, wherein the lower surface and the end surface of the substrate are heated. 2. A substrate heating apparatus for heating a thin plate-shaped substrate, wherein a lower edge and a peripheral edge of an upper surface of the substrate are heated. 3. A substrate heating apparatus for heating a thin substrate, wherein the lower surface, the end surface, and the peripheral portion of the upper surface of the substrate are heated.