JPH104053A - Surface position detector and manufacture of device thereby - Google Patents

Abstract

PROBLEM TO BE SOLVED: To realize a surface position detector which is capable of very accurately detecting the position data of a work surface by a method wherein a prescribed pattern is projected onto the surface of a wafer, and a pupil observation means is provided in a part of an image reforming means which reforms the image of the pattern projected onto the work on a prescribed surface by obliquely projecting a light beam on the surface of a work, and it is judged taking advantage of signals obtained through the pupil observation means that signals obtained by a photodetector are good or not. SOLUTION: When a wafer 5 is moved in the direction of a light axis AX, a pattern image is laterally moved on a photodetector surface 18a. It is judged by a signal processing circuit 20 taking advantage of signals obtained from a two-dimensional sensor 19 whether the position of the pattern image or AF signals are good or not, and the focal point of the wafer 5 is detected by use of the prescribed AF signals. On the other hand, when the slope of the wafer 5 is measured, a reflected light from the wafer 5 has an optical axis which deviates from the light flux center of the pupil plane 17 of a photodetecting surface, and a light intensity distribution on a pupil plane 25 is asymmetrical about a stop center. The two-dimensional sensor 19 outputs signals to an operational circuit 20, and the operational circuit 20 judges whether AF signals are good or not by a detector 18 basing on the signals outputted from the sensor 19.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surface position detecting apparatus and a device manufacturing method using the same, and more particularly to a projection lens for projecting a fine electronic circuit pattern such as an IC or LSI formed on a reticle (mask) surface. (Projection optical system) When the wafer is projected onto a wafer surface and exposed, surface position information such as the surface position and inclination of the wafer surface in the optical axis direction of the projection lens is detected. It is suitable for manufacturing a highly integrated device by locating it on the image plane.

[0002]

2. Description of the Related Art Conventionally, in a reduction projection type exposure apparatus for manufacturing semiconductor elements, a circuit pattern of a reticle as a first object is projected and exposed on a wafer as a second object by a projection lens system. At this time, prior to the projection exposure, the position of the wafer surface in the optical axis direction is detected using a surface position detection device (autofocus device, AF device) so that the wafer surface is positioned at the best image forming surface of the projection lens. I have to.

Conventionally, a surface position detecting device irradiates an oblique direction with incident light on a semiconductor wafer surface provided at a position where a mask pattern is transferred by a projection lens, and reflects the light obliquely from the semiconductor wafer surface. An oblique incidence type surface position detection device that detects reflected light and detects the surface position is often used.

FIG. 5 is a schematic view of a conventional surface position detecting device. FIG. 7 shows a pattern on a reticle 71 surface projected by a projection lens 7.
2 shows a case where the present invention is applied to an exposure apparatus that performs projection exposure on the surface of the wafer 73.

In FIG. 1, illumination light (AF light) emitted from an optical fiber 75 illuminates a pattern forming plate 77 via a condenser lens 76. The illumination light transmitted through the pattern provided on the pattern forming plate 77 passes through a lens 78, a mirror 79, and an irradiation objective lens 80, and projects an image of the pattern on an exposure surface of the wafer 73. At this time, the image of the pattern provided on the pattern forming plate 77 is projected and formed on the exposure surface of the wafer 73 obliquely with respect to the optical axis AX of the projection lens 72. The illumination light reflected by the wafer 73 is
The light enters a light receiving surface of a light receiver 84 via a light receiving system having a condensing objective lens 81, a mirror 82, and an imaging lens 83. At this time, an image of a pattern on a pattern forming plate 77 is formed on a light receiving surface 85 of the light receiver 84. It has been re-imaged.

In the figure, when the wafer 73 moves in the vertical direction (the direction of the optical axis AX), the image of the pattern moves right and left on the light receiving surface 84, and the position of the pattern is calculated by the arithmetic circuit 86.
Thus, the surface position of the wafer 73 in the optical axis AX direction is detected.

[0007]

In recent exposure apparatuses, the back focus of the projection optical system is shortened due to the increase in NA (numerical aperture) accompanying the high resolution of the projection optical system, and the auto focus (hereinafter referred to as AF) detection is performed. The system uses a small space between the projection optical system and the wafer to perform focus detection. Further, it is general that the incident angle of the light beam on the wafer is more than 80 ° in order to minimize the penetration of the detection light into the inside of the resist. These spatial constraints and A
To ensure the depth of focus of the F detection system itself, the NA of the AF detection system is at most about 0.035.

FIG. 6 is an explanatory diagram showing a reflection state of a light beam incident on the wafer 73 of FIG. In the figure, 35 is a resist, 36 is a process step, and 37 is a silicon substrate (wafer). The dotted line (31'-33 ') of the reflected light is A
An optical path when F light irradiates a flat portion on the surface of the resist 35, and 31 ″ to 33 ″ are optical paths when irradiating an inclined portion of the wafer 37. Such a local inclination of the surface of the resist 35 is as large as 1 to 2 ° at a large position. Then, in the light receiving system having a small NA as described above, light emitted from the light receiving system (actually by the stop) comes out as shown by the optical path 31 ″. Not only does the light amount on the light receiving surface decrease, but the waveform becomes asymmetric, which is a major cause of erroneous detection. There is a problem that the focus control signal is generated with the measurement error included without being able to determine.

According to the present invention, when surface position information of an object surface is detected by an oblique incidence method, a predetermined pattern is projected onto the object surface from an oblique direction, and a pattern formed on the object surface is projected from an oblique direction onto a predetermined surface. A pupil observation means is provided in a part of the re-imaging means for re-imaging the image on the object, and a signal obtained from the pupil observation means is used to judge the quality of a signal obtained by the light receiving device to obtain a surface shape of the object surface. It is an object of the present invention to provide a surface position detection device capable of easily and easily detecting surface position information without being projected, and a method of manufacturing a device using the same.

[0010]

According to the present invention, there is provided a surface position detecting apparatus comprising: (1-1) an object surface provided near an imaging plane of a projection optical system, which is oblique to an optical axis of the projection optical system; A measurement pattern is projected by a projection system, an image of the measurement pattern formed on the object surface is re-imaged on a light receiving surface by a re-imaging system, and an arithmetic circuit is used by using a signal from the light receiving device. When detecting the position information of the object plane in the optical axis direction, the re-imaging system is provided with pupil observation means for detecting the light intensity distribution on the pupil plane, and the arithmetic circuit is obtained by the pupil observation means. The signal obtained by the photodetector is selected based on the received signal.

In particular, (1-1-1) the object surface is made to coincide with the image surface of the projection optical system by a driving means based on a signal from the arithmetic circuit.

(1-1-2) A plurality of measurement patterns are projected on the object plane by the projection system, and the arithmetic circuit obtains pass / fail of a plurality of signals obtained from the light receiver by the pupil observation means. The position information at a plurality of positions on the object plane is determined by judging from the signals received and selecting the plurality of signals. And so on.

The scanning exposure apparatus according to the present invention comprises: (2-1) a pattern on a first object plane is projected onto a second object plane placed on a movable stage by a projection optical system; In a scanning type exposure apparatus that performs projection exposure while scanning the movable stage in synchronization with a speed ratio corresponding to a photographing magnification of the projection optical system, the projection is performed on a second object plane provided near an imaging plane of the projection optical system. The measurement pattern is projected from the oblique direction with respect to the optical axis of the optical system by the projection system, and the image of the measurement pattern formed on the second object surface is re-imaged on the light receiving surface by the re-imaging system. Pupil observation for detecting the light intensity distribution of the pupil plane in the re-imaging system when detecting the position information in the optical axis direction of the second object plane by the arithmetic circuit using the signal from the light receiver Means, and the arithmetic circuit obtains a signal obtained by the light receiver based on a signal obtained by the pupil observation means. It is characterized by selecting the signals to be output.

In particular, (2-1-1) the second object plane is made coincident with the image plane of the projection optical system by driving means based on a signal from the arithmetic circuit.

(2-1-2) A plurality of measurement patterns are projected on the second object plane by the projection system, and the arithmetic circuit determines whether or not a plurality of signals obtained from the light receiver are good or not by the pupil observation means. Determining from the signals obtained in step (a) and selecting the plurality of signals to obtain position information at a plurality of positions on the second object plane. And so on.

The method of manufacturing a device according to the present invention is directed to a method of manufacturing a device, comprising the steps of: The device is manufactured through a step of exposing a surface.

[0017]

DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is a schematic view of a main part of a first embodiment of the present invention. In FIG. 1, reference numeral 1 denotes an original to be projected, that is, a reticle (first object), which is mounted on a reticle stage 2 and is aligned and held with respect to a main body by a positioning mechanism (not shown). An exposure illumination system 3 illuminates the reticle 1. Reference numeral 4 denotes a projection optical system, which projects and forms a pattern of the reticle 1 on the wafer 5. The wafer 5 is held by suction on a wafer chuck 6. The wafer chuck 6 has an X perpendicular to the optical axis of the projection optical system 4.
It is held on an XY stage 7 that moves on the Y plane.

The XY stage 7 is mounted on a Z-tilt stage 8 which is movable in the optical axis direction of the projection optical system 4 (Z direction 1) and can be tilted. Each element 7, 8 constitutes one element of a drive system for focusing the wafer 5 and the reticle 1. The driving of the stage 6 in the X direction is controlled by a laser interferometer (not shown) and mounted on a part of the stage 6 (not shown). Although not shown, a similar configuration is adopted in the Y direction, and precise drive control in the XY plane is performed.

A printing apparatus (projection exposure apparatus) having such a basic configuration is additionally provided with a surface position detecting device composed of elements 9 to 25.

Next, the components 9 to 25 of the surface position detecting device according to the present embodiment will be described. Irradiation light (AF having a wavelength of about 500 nm to 1200 nm which does not have photosensitivity to the resist applied to the wafer 5 emitted from the optical fiber 9).
Light) illuminates a pattern forming plate 11 on which a predetermined pattern is formed via a condenser lens 10. The illumination light transmitted through the pattern forming plate 11 is
The light is projected onto the exposure surface of the wafer 5 through the illumination objective 3 and the illumination objective lens 14. Here, the elements 11 to 14 constitute one element of the projection system. On the exposure surface of the wafer 5, the pattern forming plate 1
The image of the pattern on 1 (pattern image) is projected and formed obliquely to the optical axis AX.

The illumination light reflected by the wafer 5 is condensed by a converging objective lens 15 and passes through a diaphragm 25, after which the lens system 1
The light is condensed at 7 and split into two light beams by a half mirror 16. The light beam reflected by the half mirror 16 is guided by a pupil imaging lens 24 onto a two-dimensional sensor (two-dimensional CCD) 19 arranged on a plane conjugate with the diaphragm 25. The light intensity distribution of the pupil plane (25) is formed on the two-dimensional sensor 19 surface. The output signal from the two-dimensional sensor 19 is input to the signal processing circuit 20.

On the other hand, the light beam that has passed through the half mirror 16 re-images the pattern image formed on the surface of the wafer 5 on the light receiving surface 18a of the light receiver 18 (that is, the pattern on the pattern forming plate 11). Pattern forming plate 1 obtained by light receiver 18
The image of the pattern on 1 is an AF signal including positional information of the wafer 5 in the optical axis AX direction. Each element 15, 16,
17 and 18 constitute one element of the re-imaging system (light receiving system), and the respective elements 25, 16, 24 and 19 constitute one element of the pupil observation means.

Now, when the wafer 5 moves up and down in the direction of the optical axis AX, the pattern image on the light receiving surface 18a moves right and left on the light receiving surface 18a. In the present embodiment, the signal processing circuit 20 determines the quality of the AF signal using the position information of the pattern image, that is, a signal from a two-dimensional sensor 19 to be described later, based on the AF signal. 5 (position information in the optical axis AX direction).

FIG. 2 shows the light intensity distribution on the two-dimensional sensor 19 when, for example, the horizontal axis indicates the focus detection direction (the direction of the optical axis AX). When measuring a flat portion of the wafer 5, the detection light detected by the two-dimensional sensor 19 has an intensity distribution symmetric about the optical axis of the light receiving system (15).
At this time, in the pupil observation system, the intensity distribution is symmetrical with respect to the center of the stop 17 (image) as shown in FIG. R is aperture 17
Is the radius of

On the other hand, when measuring the inclined portion of the wafer 5,
As described above, since the reflected light from the wafer 5 is deviated from the center of the light beam and the optical axis on the pupil plane (17) of the light receiving system, the pupil plane (2
The light intensity distribution in 5) is asymmetric with respect to the center of the stop as shown in FIG. The two-dimensional sensor 19 outputs a signal to the arithmetic circuit 20. The arithmetic circuit 20 determines the quality of the AF signal obtained by the light receiver 18 based on the signal.

As an example, the position of the center of gravity of the light quantity distribution in FIG. 2 is calculated. At this time, it is checked in advance where the optical axis center of the light receiving system corresponds to the two-dimensional sensor 19. (It is determined by projecting the image of the aperture 25 onto the two-dimensional sensor 19.) If the coordinates of the luminous flux barycenter obtained by the calculation are within a predetermined range from the optical axis center of the two-dimensional sensor 19 surface,
The AF signal can be determined to be a highly reliable signal (good signal), and if the luminous flux barycenter coordinates are out of the predetermined range, it is predicted that a part of the luminous flux is removed from the optical system. , The AF signal can be determined as a defective signal.

In the present embodiment, for example, a focus detection system capable of multi-point measurement capable of obtaining AF signals at a plurality of positions on a wafer surface (for example, Japanese Patent Laid-Open No. 6-283403).
No.), this method is used to select and process only information on a plurality of highly reliable measurement points.
As a result, a highly reliable focus signal is obtained and the AF accuracy is improved.

The driving means 21 uses the signal from the arithmetic circuit 20 to drive the Z-tilt stage 8 by the driving signal 23.
Is moved in the optical axis AX direction to position the wafer 5 on the best image plane of the projection optical system 4.

In the present embodiment, the AF optical path is divided by the half mirror 16 and the stop 2 is
5 is formed on the two-dimensional sensor 19, but the CDD
The optical path may be divided anywhere as long as 19 can be arranged at the pupil position.

Next, as a projection exposure apparatus shown in FIG. 1, a light beam from the exposure illumination system 3 is shaped into a slit-like light beam by illumination means to illuminate a pattern on the reticle 1 surface, and the pattern on the reticle 1 surface is projected. The optical system 4 synchronizes the reticle and the movable stage on the surface of the wafer 5 placed on the movable stage with scanning means in the short direction of the slit light beam at a speed ratio corresponding to the photographing magnification of the projection optical system 4. A case where a step-and-scan type scanning exposure apparatus that performs projection exposure (scan exposure) while scanning by using a scanning exposure apparatus is described.

In the case of scan exposure, from the viewpoint of throughput, real-time A where focus measurement is performed at the time of exposure is performed.
F is advantageous. However, since it is difficult to measure a process wafer without error by an optical method, prescanning is often performed in advance to perform offset removal.

FIG. 3 is an explanatory diagram showing how a focus signal (AF signal) is output from a region where a slope is mixed on the wafer surface. The dotted line shows the surface shape of the resist, and the solid line shows the focus measurement value. A to E indicate focused sampling positions on the wafer surface. Since the sampling positions A, B, D, and E measure a flat portion of the wafer 5, the focus signal reflects an actual step. However, at the sampling position C, a part of the light beam is shaded by the inclination of the resist, and the signal output does not reflect the shape of the step. In the conventional AF detection method, in such a case, the signal processing is performed on the assumption that the background has such a level difference, so that an error Zf-Zr occurs at the sampling position C.

On the other hand, in the present method, the height information Zf can be determined to be erroneous detection from the processing result of the pupil observation system, and thus the height information Zf is not adopted as a focus signal.

In the present embodiment, this is achieved by complementing the target value signal at the sampling position C with the focus measurement values at the preceding and following sampling points.

In FIG. 3, the target value signal Zc is generated by averaging the focus measurement value at the sampling position C and the outputs from the sampling positions B and D. In this case, a dedicated DSP (digital signal processor) may be built in the arithmetic circuit 20 to perform curve fitting. As a result, it is possible to generate a focus control signal that accurately reflects the actual step shape.

Next, a case where real-time AF is to be performed using this method will be described. When measuring multiple points in the exposure slit, a defective signal is excluded from the measured AF signals at a plurality of points, and a focus control signal is created from an average value of the remaining AF signals. If the optical system cannot be integrated and only a limited number of points can be measured in the exposure slit, the following prefocus method is used.

Next, the method will be described with reference to FIGS. FIG. 4 shows a step as shown in FIG.
5 shows a timing chart from signal determination when measuring at step S1 to stage control.

In this embodiment, when a defective signal is generated, an algorithm for calculating a signal at a defective measurement point from signals at sampling positions before and after the defective signal is applied. At this time, what time is required from the measurement (C1) of the sampling position C to the focus control (C4) of the sampling position C is illustrated in this time chart. First, the time required to determine whether the signal is good / bad and the time required for signal processing are T
Spend one.

Since the output from the pupil observation means is output from a two-dimensional sensor different from the AF signal, it is processed in parallel.

If the sampling position C2 is determined to be a defective signal, the next sampling position D is generated to generate a correction signal.
Wait for the output of 2. The time is represented by TD / V where TD is the sampling interval and V is the stage speed.

Next, it takes time T2 to generate the correction signal C3 from the signals at the sampling positions B2 and D2, and further sends a target value signal to the control system.
If it is 3, the stage control (C4) starts from the time of measurement (C1).
Total time required until D / V + T1 + T2 + T3
Becomes

As can be seen from the above, when the defective signal is to be complemented from the signal at ± n points, n.times.
The AF measurement point is arranged at a position D + (T1 + T2 + T3) .V before.

By using the above method, focus detection is performed with high accuracy without reducing the throughput by pre-scanning.

The present invention relates to an exposure apparatus of a type other than the apparatus shown in FIG. 1, for example, an apparatus for projecting a pattern image by a projection mirror system, or an apparatus for projecting a pattern image by a projection optical system composed of lenses and mirrors. And so on.

The present invention also relates to an electron beam exposure apparatus and an X-ray exposure apparatus for drawing a circuit pattern or projecting a circuit pattern using, for example, an electron beam and an electron lens, other than an optical exposure apparatus. The same can be applied to. In addition, the present invention can be similarly applied to optical apparatuses other than the exposure apparatus that require surface position detection.

Next, an embodiment of a method for manufacturing a semiconductor device using the above-described surface position detecting device or scanning exposure apparatus will be described.

FIG. 7 is a flowchart for manufacturing a semiconductor device (a semiconductor chip such as an IC or an LSI, or a liquid crystal panel or a CCD).

Step 1 (circuit design) in this embodiment
Now, the circuit design of the semiconductor device will be performed. Step 2
In (mask production), a mask on which a designed circuit pattern is formed is produced.

On the other hand, in step 3 (wafer manufacture), a wafer is manufactured using a material such as silicon. Step 4
The (wafer process) is called a pre-process, and an actual circuit is formed on the wafer by lithography using the prepared mask and wafer.

The next step 5 (assembly) is called a post-process, and is a process of forming a semiconductor chip using the wafer produced in step 4, and includes an assembly process (dicing and bonding) and a packaging process (chip encapsulation). And the like.

In step 6 (inspection), inspections such as an operation confirmation test and a durability test of the semiconductor device manufactured in step 5 are performed. Through these steps, a semiconductor device is completed and shipped (step 7).

FIG. 8 is a detailed flowchart of the wafer process in step 4 described above. First, in step 11 (oxidation), the surface of the wafer is oxidized. Step 12 (C
In VD), an insulating film is formed on the wafer surface.

In step 13 (electrode formation), electrodes are formed on the wafer by vapor deposition. In step 14 (ion implantation), ions are implanted into the wafer. Step 15
In (resist processing), a photosensitive agent is applied to the wafer. Step 16 (exposure) uses the above-described exposure apparatus to print and expose the circuit pattern of the mask onto the wafer.

In step 17 (development), the exposed wafer is developed. In step 18 (etching), portions other than the developed resist are removed. In step 19 (resist stripping), the resist that has become unnecessary after the etching is removed. By repeating these steps, multiple circuit patterns are formed on the wafer.

By using the manufacturing method of this embodiment, a highly integrated semiconductor device can be easily manufactured.

[0056]

According to the present invention, as described above, when detecting the surface position information of the object surface by the oblique incidence method, a predetermined pattern is projected on the object surface from an oblique direction and formed on the object surface. Pupil observation means is provided in a part of the re-imaging means for re-imaging the formed pattern on a predetermined surface from an oblique direction, and the quality of a signal obtained by a light receiver is determined using a signal from the pupil observation means. Accordingly, it is possible to achieve a surface position detection device capable of easily and accurately detecting surface position information without being projected onto the surface shape of the object surface, and a device manufacturing method using the same.

In particular, if the surface position detecting device is applied to an exposure device for semiconductor manufacturing, erroneous detection of the focal position can be reduced and the wafer can be exposed with the best focus, so that the yield can be improved and the throughput of the exposure device can be improved. Can be improved.

[Brief description of the drawings]

FIG. 1 is a perspective view of a main part of a first embodiment of a surface position detecting device of the present invention.

FIG. 2 is an explanatory diagram of a light intensity distribution on a pupil plane of a pupil observation unit in FIG. 1;

FIG. 3 is an explanatory diagram of signal processing by the arithmetic circuit of FIG. 1;

FIG. 4 is a timing chart of the operation of the first embodiment of FIG. 1;

FIG. 5 is a schematic diagram of a conventional surface position detecting device.

FIG. 6 is an explanatory diagram of an optical path when measuring an inclined portion of a wafer.

FIG. 7 is a flowchart of a device manufacturing method according to the present invention.

FIG. 8 is a flowchart of a device manufacturing method of the present invention.

[Explanation of symbols]

 Reference Signs List 1 reticle 2 reticle scan stage 3 illumination system 4 projection optical system 5 wafer 6 wafer chuck 7 X, Y stage 8 Z, tilt stage 9 fiber 10 condensing lens 11 pattern forming plate 13 mirror 14 irradiation objective lens 15 condensing objective lens 16 Half mirror 18 Light receiver 19 Two-dimensional sensor 20 Arithmetic circuit 21 Driving means

Claims (8)

[Claims] 1. A measurement pattern projected on an object plane provided in the vicinity of an imaging plane of a projection optical system from an oblique direction with respect to an optical axis of the projection optical system by a projection system, and the measurement pattern formed on the object plane. The image of the pattern for re-imaging on the receiver surface by the re-imaging system,
A pupil observation means for detecting a light intensity distribution on a pupil plane is provided in the re-imaging system when position information in the optical axis direction of the object plane is detected by an arithmetic circuit using a signal from the light receiver. And the arithmetic circuit selects a signal obtained by the light receiving device based on a signal obtained by the pupil observation means. 2. The surface position detecting device according to claim 1, wherein said object surface is made to coincide with an image surface of said projection optical system by a driving means based on a signal from said arithmetic circuit. 3. A plurality of measurement patterns are projected from the projection system onto the object plane, and the arithmetic circuit determines pass / fail of a plurality of signals obtained from the photodetector based on signals obtained by the pupil observation means. 3. The surface position detecting device according to claim 1, wherein the plurality of signals are selected to obtain position information at a plurality of positions on the object surface. 4. A pattern on a first object plane is placed on a movable stage by a projection optical system, and the first object and the movable stage are scanned on a second object plane by a scanning means so as to correspond to a photographing magnification of the projection optical system. In a scanning type exposure apparatus that performs projection exposure while scanning in synchronization with a set speed ratio, a projection is performed from a direction oblique to an optical axis of the projection optical system onto a second object plane provided near an imaging plane of the projection optical system. A measurement pattern is projected by a system, an image of the measurement pattern formed on the second object surface is re-imaged on a light receiving surface by a re-imaging system, and calculation is performed using a signal from the light receiving device. A pupil observation means for detecting a light intensity distribution on a pupil plane in the re-imaging system when detecting position information of the second object plane in the optical axis direction by a circuit; That the signal obtained by the receiver is selected based on the signal obtained in A scanning exposure apparatus. 5. A scanning exposure apparatus according to claim 4, wherein said second object plane is made to coincide with an image plane of said projection optical system by a driving means based on a signal from said arithmetic circuit. 6. A plurality of measurement patterns are projected from the projection system onto the second object plane, and the arithmetic circuit determines whether or not a plurality of signals obtained from the photodetector is good based on signals obtained by the pupil observation means. 6. The scanning exposure apparatus according to claim 4, wherein the plurality of signals are determined and the plurality of signals are discarded to obtain position information at a plurality of positions on the second object plane. 7. After aligning a reticle and a wafer using the surface position detecting device according to claim 1, a pattern on the reticle surface is projected and exposed on the wafer surface. Thereafter, the device is manufactured through a development processing step on the wafer. 8. After the reticle and the wafer are aligned using the scanning exposure apparatus according to claim 4, the pattern on the reticle surface is projected and exposed on the wafer surface. Thereafter, the device is manufactured through a development processing step on the wafer.