JPH1036816A - Chemical machine polishing particle and chemical machine polishing method - Google Patents
Chemical machine polishing particle and chemical machine polishing methodInfo
- Publication number
- JPH1036816A JPH1036816A JP8199193A JP19919396A JPH1036816A JP H1036816 A JPH1036816 A JP H1036816A JP 8199193 A JP8199193 A JP 8199193A JP 19919396 A JP19919396 A JP 19919396A JP H1036816 A JPH1036816 A JP H1036816A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- chemical mechanical
- mechanical polishing
- slurry
- polishing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は化学的機械研磨粒子
および化学的機械研磨方法に関し、さらに詳しくは、半
導体装置基板上に形成された層間絶縁膜等の研磨に供せ
られるスラリに含有する化学的機械研磨粒子および化学
的機械研磨方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a chemical mechanical polishing particle and a chemical mechanical polishing method, and more particularly, to a chemical mechanical polishing particle contained in a slurry used for polishing an interlayer insulating film or the like formed on a semiconductor device substrate. Mechanical polishing particles and a chemical mechanical polishing method.
【０００２】[0002]
【従来の技術】デバイスの高密度化に伴う配線技術は、
益々微細化、多層化の方向に進んでおり、半導体集積回
路の製造工程において、所謂多層配線技術は益々重要な
ものとなりつつある。しかしながら、微細化および多層
化の進展は層間絶縁膜の段差が大且つ急峻となる新たな
問題点を生じさせており、層間絶縁膜上に形成される配
線の加工精度や信頼性を低下させる虞がある。この為、
Ａｌ配線の段差被覆性の大幅な改善ができない現在、層
間絶縁膜の平坦性を向上させる必要がある。また、層間
絶縁膜の平坦性の向上はリソグラフィーの短波長化に伴
う焦点深度マージンの低下と言う観点からも重要であ
り、限界となりつつある解像度を確保する必要がある。
現在までに開発された絶縁膜の形成技術及び平坦化技術
を「表１」に示す。2. Description of the Related Art Wiring technology accompanying high density devices has
In the process of manufacturing a semiconductor integrated circuit, so-called multilayer wiring technology is becoming more and more important in the direction of miniaturization and multilayering. However, the progress of miniaturization and multi-layering has caused a new problem that the step of the interlayer insulating film becomes large and steep, which may reduce the processing accuracy and reliability of wiring formed on the interlayer insulating film. There is. Because of this,
At present, it is not possible to significantly improve the step coverage of the Al wiring, and it is necessary to improve the flatness of the interlayer insulating film. Further, the improvement of the flatness of the interlayer insulating film is important from the viewpoint of a decrease in the depth of focus margin accompanying the shortening of the wavelength of lithography, and it is necessary to secure the resolution which is becoming the limit.
Table 1 shows the insulating film formation technology and the planarization technology developed to date.
【０００３】[0003]
【表１】 [Table 1]
【０００４】「表１」に示した何れのものにおいても、
微細化および多層化に適用した場合では配線間隔が広い
場合の平坦化の不足や層間膜での「す」の発生による配
線間の接続不良等が重要な問題になっている。これ等を
改善する手段としてウェハのミラーポリッシュに用いら
れていた化学的機械研磨法を応用して層間絶縁膜等をグ
ローバル平坦化する技術が実行、または検討されてお
り、層間絶縁膜等を完全平坦化できるものとして有望視
されている。[0004] In any of those shown in Table 1,
When applied to miniaturization and multi-layering, insufficient problems such as insufficient flattening when wiring intervals are wide and poor connection between wirings due to generation of "spot" in an interlayer film have become important problems. As a means to improve this, a technology to globally planarize the interlayer insulating film etc. by applying the chemical mechanical polishing method used for mirror polishing of wafers has been implemented or studied. Promising as a material that can be flattened.
【０００５】図５は、化学的機械研磨装置の概略側面図
である。化学的機械研磨装置は、研磨布４が固着され外
部からの駆動力により図中の矢印方向に回転する研磨プ
レート３、被加工物であるウェハ等の基板６を保持する
とともに研磨布４に基板６を付勢圧接させ、図中の矢印
方向に回転するキャリア５、化学的機械研磨粒子を含有
するスラリ２を供給するスラリ供給系７から概略構成さ
れている。研磨プレート３の回転中心付近には、スラリ
供給系７に取り付けられたノズル先端のスラリ供給口１
からスラリ２が滴下され、滴下されたスラリ２は研磨プ
レート３の回転による遠心力により研磨布４上に拡散さ
れる。そして、研磨プレート３とキャリア５とをいずれ
も回転させるとともに、基板６と研磨布４とのスラリ２
を介した摺擦運動により基板６を研磨するものである。
この時、絶縁膜をエッチングする意味でＫＯＨ等を添加
し、塩基性雰囲気で行われる。FIG. 5 is a schematic side view of a chemical mechanical polishing apparatus. The chemical mechanical polishing apparatus holds a polishing plate 3 fixed to a polishing plate 3 and a substrate 6 such as a wafer, which is a workpiece, which rotates in the direction of an arrow in FIG. 6, a carrier 5 rotating in the direction of the arrow in the drawing, and a slurry supply system 7 for supplying a slurry 2 containing chemical mechanical polishing particles. In the vicinity of the rotation center of the polishing plate 3, a slurry supply port 1 at the tip of a nozzle attached to a slurry supply system 7 is provided.
Is dropped from the slurry 2, and the dropped slurry 2 is spread on the polishing cloth 4 by centrifugal force generated by the rotation of the polishing plate 3. Then, both the polishing plate 3 and the carrier 5 are rotated, and the slurry 2 of the substrate 6 and the polishing cloth 4 is rotated.
The substrate 6 is polished by a rubbing motion via the substrate.
At this time, KOH or the like is added for the purpose of etching the insulating film, and the etching is performed in a basic atmosphere.
【０００６】化学的機械研磨された基板６は、基板６表
面からスラリ２等を十分洗浄して除去させる工程を経て
平坦化が終了する。この基板６表面からスラリ２等を除
去する工程手順は、先ず化学的機械研磨装置においてス
ラリ２の荒落としを行い、次に基板６を図示を省略する
が別の洗浄装置に移動させ、基板６表面に付着したスラ
リ２を完全に除去するとともに、化学的機械研磨時の汚
染物を除去する。ところで、この化学的機械研磨装置か
ら洗浄装置に基板６を移動させる工程では、基板６に付
着したスラリ２が固着するのを防止する手段が採られて
おり、水溶液の入ったカセットに基板６を浸漬させた状
態で運ぶか、所謂ドライイン−ドライアウトと言われて
いるウエット雰囲気で化学的機械研磨装置と洗浄装置間
を連接する装置を設けて行うものがある。The substrate 6 that has been chemically and mechanically polished is subjected to a step of sufficiently cleaning and removing the slurry 2 and the like from the surface of the substrate 6 to complete the planarization. The procedure for removing the slurry 2 and the like from the surface of the substrate 6 is as follows. First, the slurry 2 is roughly removed in a chemical mechanical polishing apparatus, and then the substrate 6 is moved to another cleaning apparatus (not shown). The slurry 2 adhering to the surface is completely removed, and contaminants during chemical mechanical polishing are removed. By the way, in the step of moving the substrate 6 from the chemical mechanical polishing apparatus to the cleaning apparatus, a means for preventing the slurry 2 attached to the substrate 6 from sticking is employed, and the substrate 6 is placed in a cassette containing an aqueous solution. There is a method in which the apparatus is carried in a state of being immersed or provided with an apparatus for connecting a chemical mechanical polishing apparatus and a cleaning apparatus in a wet atmosphere called so-called dry-in / dry-out.
【０００７】しかしながら、水溶液の入ったカセットに
基板６を浸漬させた状態で運ぶのは大変な作業であり、
ドライイン−ドライアウト装置を設けたものでは化学的
機械研磨装置と洗浄装置とのタクトタイムが異なる為、
装置間のバランスが悪いという問題があった。However, transporting the substrate 6 while immersing the substrate 6 in a cassette containing an aqueous solution is a serious operation.
In the case where the dry-in / dry-out device is provided, the tact time between the chemical mechanical polishing device and the cleaning device is different,
There is a problem that the balance between the devices is poor.
【０００８】[0008]
【発明が解決しようとする課題】本発明の課題は上述し
た従来技術の諸問題を解決することであり、基板洗浄時
における除去効果を向上させる化学的機械研磨粒子およ
び化学的機械研磨方法を提供することである。SUMMARY OF THE INVENTION An object of the present invention is to solve the above-mentioned problems of the prior art, and to provide a chemical mechanical polishing particle and a chemical mechanical polishing method for improving the removal effect at the time of cleaning a substrate. It is to be.
【０００９】[0009]
【課題を解決するための手段】化学的機械研磨粒子は研
磨時には必要な構成要素であるが、その後の洗浄工程に
おいては除去しにくいものとなる。そこで、本発明者は
鋭意熟考して化学的機械研磨粒子を昇華性を有するもの
とすることを思いつくに到った。即ち、本発明の化学的
機械研磨粒子では、化学的機械研磨粒子が昇華性を有す
る金属カルコゲン化合物であることを特徴とする。ま
た、化学的機械研磨方法では、化学的機械研磨粒子が昇
華性を有する金属カルコゲン化合物であり、層間絶縁膜
等の化学的機械研磨後に基板を加熱させ、基板表面から
化学的機械研磨粒子を昇華させる工程を有することを特
徴とする。そして、化学的機械研磨粒子である金属カル
コゲン化合物としては、ＳｅＦ4 あるいはＴｅＦ4 が望
ましい。Means for Solving the Problems Chemical mechanical polishing particles are necessary components during polishing, but are difficult to remove in a subsequent cleaning step. Therefore, the present inventors have come up with the idea that the chemical mechanical polishing particles have sublimability. That is, the chemical mechanical polishing particles of the present invention are characterized in that the chemical mechanical polishing particles are a metal chalcogen compound having sublimability. In the chemical mechanical polishing method, the chemical mechanical polishing particles are a metal chalcogen compound having a sublimation property, and the substrate is heated after the chemical mechanical polishing of the interlayer insulating film and the like, and the chemical mechanical polishing particles are sublimated from the substrate surface. And a step of causing As the metal chalcogen compound which is a chemical mechanical polishing particle, SeF 4 or TeF 4 is desirable.
【００１０】上述した手段による作用としては、化学的
機械研磨後に基板を加熱すれば化学的機械研磨粒子を基
板表面から昇華させることができる。従って、従来のよ
うにスクラバーやスプレー洗浄により物理的にスラリの
荒落としをする工程が省け、化学的な洗浄のみによる化
学的機械研磨の汚染物除去ができることである。As an effect of the above-mentioned means, if the substrate is heated after the chemical mechanical polishing, the chemical mechanical polishing particles can be sublimated from the substrate surface. Therefore, the step of physically removing the slurry by scrubber or spray cleaning as in the prior art can be omitted, and contaminants can be removed by chemical mechanical polishing only by chemical cleaning.
【００１１】[0011]
【実施例】以下、本発明の具体的な実施例について図１
ないし図４を参照して説明する。なお、化学的機械研磨
装置の概略構成については、従来の技術において図５の
概略側面図を参照して説明した事例と同様であるので省
略する。FIG. 1 shows a specific embodiment of the present invention.
This will be described with reference to FIG. Note that the schematic configuration of the chemical mechanical polishing apparatus is the same as the case described with reference to the schematic side view of FIG.
【００１２】実施例１ 本実施例は、Ａｌ配線層間の層間絶縁膜を平坦化するも
のの一例であり、これを図１および図２を参照して説明
する。図１（ａ）ないし（ｂ）は、基板６の化学的機械
研磨工程を説明する概略断面図であり、図２（ａ）ない
し（ｃ）は、基板６を加熱させ化学的機械研磨粒子を昇
華させる工程を説明する概略断面図である。Embodiment 1 This embodiment is an example of flattening an interlayer insulating film between Al wiring layers, which will be described with reference to FIGS. 1 and 2. FIG. FIGS. 1A and 1B are schematic cross-sectional views for explaining a chemical mechanical polishing step of the substrate 6, and FIGS. 2A to 2C show a case where the substrate 6 is heated to remove the chemical mechanical polishing particles. It is a schematic sectional drawing explaining the process of sublimation.
【００１３】シリコン等で構成された基板６上に、酸化
シリコン等で構成された第一の層間絶縁膜６ａ、第一の
層間絶縁膜６ａ上にＡｌ配線層６ｂを形成し、さらに第
一の層間絶縁膜６ａおよびＡｌ配線層６ｂ上に酸化シリ
コン等で構成された第二の層間絶縁膜６ｃを形成したも
のを用意し、下記条件で第二の層間絶縁膜６ｃの化学的
機械研磨を行った。A first interlayer insulating film 6a made of silicon oxide or the like is formed on a substrate 6 made of silicon or the like, and an Al wiring layer 6b is formed on the first interlayer insulating film 6a. A second interlayer insulating film 6c made of silicon oxide or the like is formed on the interlayer insulating film 6a and the Al wiring layer 6b, and the second interlayer insulating film 6c is subjected to chemical mechanical polishing under the following conditions. Was.
【００１４】 研磨プレート回転数 ５０ｒｐｍ キャリア回転数 １７ｒｐｍ 研磨圧力 ８ｐｓｉ 研磨布温度 ３０〜４０℃ スラリ流量 ２２５ｍｌ／ｍｉｎ ここでは塩基性の雰囲気で化学的機械研磨を行う為、Ｓ
ｅＦ4 粒子２ａを含有するスラリ２をＫＯＨ／水／アル
コールに懸濁させたものを用いた。Polishing plate rotation speed 50 rpm Carrier rotation speed 17 rpm Polishing pressure 8 psi Polishing cloth temperature 30-40 ° C. Slurry flow rate 225 ml / min In this case, chemical mechanical polishing is performed in a basic atmosphere.
The slurry 2 containing the eF 4 particles 2a suspended in KOH / water / alcohol was used.
【００１５】第二の層間絶縁膜６ｃが平坦化された基板
６表面には、図２（ａ）に示したように、スラリ２が付
着している。そして、この基板６を加熱し、同図（ｂ）
に示したようにＳｅＦ4 粒子２ａを昇華させる。次に、
基板６表面に残留するスラリ２と汚染物をスピン洗浄器
により、洗浄液ＳＣ−１での洗浄後に洗浄液希フッ酸で
の洗浄を経て、最後に純水でリンスする。このようにし
て得られた基板６の表面は、同図（ｃ）に示したように
スラリが問題のないレベルで除去されており、スラリ２
による汚染は見られなかった。As shown in FIG. 2A, the slurry 2 is adhered to the surface of the substrate 6 where the second interlayer insulating film 6c has been flattened. Then, the substrate 6 is heated, and FIG.
As shown in (1), the SeF 4 particles 2a are sublimated. next,
The slurry 2 and contaminants remaining on the surface of the substrate 6 are rinsed with a cleaning liquid SC-1 after cleaning with a cleaning liquid diluted hydrofluoric acid by a spin cleaning device, and finally rinsed with pure water. The surface of the substrate 6 obtained in this way has a slurry free of any problem as shown in FIG.
No contamination was found.
【００１６】実施例２ 本実施例は、Ａｌ配線層間の金属膜を平坦化するものの
一例であり、これを図３および図４を参照して説明す
る。図３（ａ）ないし（ｂ）は、基板６の化学的機械研
磨工程を説明する概略断面図であり、図４（ａ）ないし
（ｃ）は、基板６を加熱させ化学的機械研磨粒子を昇華
させる工程を説明する概略断面図である。Embodiment 2 This embodiment is an example of flattening a metal film between Al wiring layers, which will be described with reference to FIGS. 3 and 4. FIG. FIGS. 3A and 3B are schematic cross-sectional views for explaining the chemical mechanical polishing step of the substrate 6, and FIGS. 4A to 4C illustrate the steps of heating the substrate 6 to remove the chemical mechanical polishing particles. It is a schematic sectional drawing explaining the process of sublimation.
【００１７】シリコン等で構成された基板６上に、酸化
シリコン等で構成された第一の層間絶縁膜６ａ、第一の
層間絶縁膜６ａ上にＡｌ配線層６ｂを形成し、第一の層
間絶縁膜６ａおよびＡｌ配線層６ｂ上に酸化シリコン等
で構成された第二の層間絶縁膜６ｃを形成し、Ａｌ配線
層６ｂ上の第二の層間絶縁膜６ｃを除去して開口部６ｄ
を形成し、ブランケットタングステン６ｅを第二の層間
絶縁膜６ｃ上に形成するとともに開口部６ｄにも充填し
たものを用意し、下記条件で第二の層間絶縁膜６ｃの化
学的機械研磨を行った。A first interlayer insulating film 6a made of silicon oxide or the like is formed on a substrate 6 made of silicon or the like, and an Al wiring layer 6b is formed on the first interlayer insulating film 6a. A second interlayer insulating film 6c made of silicon oxide or the like is formed on the insulating film 6a and the Al wiring layer 6b, and the second interlayer insulating film 6c on the Al wiring layer 6b is removed to form an opening 6d.
A blanket tungsten 6e was formed on the second interlayer insulating film 6c and filled in the opening 6d, and the second interlayer insulating film 6c was subjected to chemical mechanical polishing under the following conditions. .
【００１８】 研磨プレート回転数 ５０ｒｐｍ キャリア回転数 １７ｒｐｍ 研磨圧力 １０ｐｓｉ 研磨布温度 ３０〜４０℃ スラリ流量 ２２５ｍｌ／ｍｉｎ ここでは酸性の雰囲気で化学的機械研磨を行う為、Ｔｅ
Ｆ4 粒子２ｂを含有するスラリ２を希フッ酸／水／アル
コールに懸濁させたものを用いた。Polishing plate rotation speed 50 rpm Carrier rotation speed 17 rpm Polishing pressure 10 psi Polishing cloth temperature 30-40 ° C. Slurry flow rate 225 ml / min Here, chemical mechanical polishing is performed in an acidic atmosphere, so that Te is used.
The slurry 2 containing the F 4 particles 2b suspended in diluted hydrofluoric acid / water / alcohol was used.
【００１９】ブランケットタングステン６ｅが平坦化さ
れた基板６表面には、図４（ａ）に示したように、スラ
リ２が付着している。そして、基板６を加熱し、ＴｅＦ
4 粒子２ｂを昇華させる。次に、基板６表面に残留する
スラリ２と汚染物をスピン洗浄器により、洗浄液ＳＣ−
１での洗浄後に洗浄液希フッ酸での洗浄を経て、最後に
純水でリンスした。このようにして得られた基板６の表
面は、同図（ｃ）に示したようにスラリが問題のないレ
ベルで除去されており、スラリ２による汚染は見られな
かった。As shown in FIG. 4A, the slurry 2 is adhered to the surface of the substrate 6 where the blanket tungsten 6e is flattened. Then, the substrate 6 is heated and TeF
The four particles 2b are sublimated. Next, the slurry 2 and contaminants remaining on the surface of the substrate 6 are cleaned by a spin cleaning device using a cleaning solution SC-.
After the washing with No. 1, washing with diluted hydrofluoric acid was performed, and finally, the substrate was rinsed with pure water. On the surface of the substrate 6 thus obtained, the slurry was removed at a level that did not cause any problem as shown in FIG.
【００２０】本発明は上記した実施例１及び実施例２に
示した事例に限定されるものでなく、本発明の主旨を逸
脱しない範囲内での構造や条件は適宜変更可能なもので
ある。The present invention is not limited to the examples shown in the first and second embodiments described above, and the structure and conditions can be changed as appropriate without departing from the gist of the present invention.
【００２１】[0021]
【発明の効果】本発明の化学的機械研磨粒子および化学
的機械研磨方法によれば、従来技術では隘路となってい
た基板表面からスラリの除去を簡便に行うことができる
とともに、除去する為の洗浄装置費用の低減と洗浄プロ
セスにおける工数の低減を図ることができる。According to the chemical mechanical polishing particles and the chemical mechanical polishing method of the present invention, the slurry can be easily removed from the substrate surface, which has been a bottleneck in the prior art, and the slurry for removing the slurry can be easily removed. It is possible to reduce the cost of the cleaning apparatus and the number of steps in the cleaning process.
【図１】 本発明の実施例１を示し、（ａ）〜（ｂ）は
基板の化学的機械研磨工程を説明する概略断面図であ
る。FIG. 1 shows Example 1 of the present invention, and (a) and (b) are schematic cross-sectional views illustrating a chemical mechanical polishing step of a substrate.
【図２】 本発明の実施例１を示し、（ａ）〜（ｃ）は
基板を加熱させ化学的機械研磨粒子を昇華させる工程を
説明する概略断面図である。FIG. 2 shows Example 1 of the present invention, and (a) to (c) are schematic cross-sectional views illustrating a process of heating a substrate to sublimate chemical mechanical polishing particles.
【図３】 本発明の実施例２を示し、（ａ）〜（ｂ）は
基板の化学的機械研磨工程を説明する概略断面図であ
る。FIG. 3 shows Example 2 of the present invention, and (a) and (b) are schematic cross-sectional views illustrating a chemical mechanical polishing step of a substrate.
【図４】 本発明の実施例２を示し、（ａ）〜（ｃ）は
基板を加熱させ化学的機械研磨粒子を昇華させる工程を
説明する概略断面図である。FIG. 4 shows Example 2 of the present invention, and (a) to (c) are schematic cross-sectional views illustrating steps of heating a substrate to sublimate chemical mechanical polishing particles.
【図５】 化学的機械研磨装置の概略側面図である。FIG. 5 is a schematic side view of a chemical mechanical polishing apparatus.
１…スラリ供給口、２…スラリ、２ａ…ＳｅＦ4 粒子、
２ｂ…ＴｅＦ4 粒子、３…研磨プレート、４…研磨布、
５…キャリア、６…基板、６ａ…第一の層間絶縁膜、６
ｂ…Ａｌ配線層、６ｃ…第二の層間絶縁膜、６ｄ…開口
部、６ｅ…ブランケットタングステン、７…スラリ供給
系1 ... slurry supply port, 2 ... slurry, 2a ... SeF 4 particles,
2b: TeF 4 particles, 3: polishing plate, 4: polishing cloth,
5 Carrier, 6 Substrate, 6a First interlayer insulating film, 6
b: Al wiring layer, 6c: second interlayer insulating film, 6d: opening, 6e: blanket tungsten, 7: slurry supply system
Claims (6)
れるスラリに含有する化学的機械研磨粒子であって、 前記化学的機械研磨粒子が、昇華性を有する金属カルコ
ゲン化合物であることを特徴とする化学的機械研磨粒
子。1. A chemical mechanical polishing particle contained in a slurry used for polishing a thin film formed on a substrate, wherein the chemical mechanical polishing particle is a metal chalcogen compound having sublimability. Characterized by chemical mechanical polishing particles.
であることを特徴とする請求項１に記載の化学的機械研
磨粒子。2. The method according to claim 1, wherein the metal chalcogen compound is SeF 4
The chemical mechanical polishing particles according to claim 1, wherein
であることを特徴とする請求項１に記載の化学的機械研
磨粒子。3. The method according to claim 2, wherein the metal chalcogen compound is TeF 4
The chemical mechanical polishing particles according to claim 1, wherein
研磨粒子を含有するスラリで研磨される工程を有する化
学的機械研磨方法であって、 前記化学的機械研磨粒子が、昇華性を有する金属カルコ
ゲン化合物であり、 前記薄膜の研磨後に前記基板を加熱させ、 前記基板表面から前記化学的機械研磨粒子を昇華させる
工程を有することを特徴とする化学的機械研磨方法。4. A chemical mechanical polishing method comprising a step of polishing a thin film formed on a substrate with a slurry containing chemical mechanical polishing particles, wherein the chemical mechanical polishing particles have a sublimability. A metal chalcogen compound having the step of heating the substrate after polishing the thin film, and sublimating the chemical mechanical polishing particles from the surface of the substrate.
であることを特徴とする請求項４に記載の化学的機械研
磨方法。5. The method according to claim 1, wherein the metal chalcogen compound is SeF 4
The chemical mechanical polishing method according to claim 4, wherein
であることを特徴とする請求項４に記載の化学的機械研
磨方法。6. The method according to claim 1, wherein the metal chalcogen compound is TeF 4
The chemical mechanical polishing method according to claim 4, wherein
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8199193A JPH1036816A (en) | 1996-07-29 | 1996-07-29 | Chemical machine polishing particle and chemical machine polishing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8199193A JPH1036816A (en) | 1996-07-29 | 1996-07-29 | Chemical machine polishing particle and chemical machine polishing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH1036816A true JPH1036816A (en) | 1998-02-10 |
Family
ID=16403700
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8199193A Pending JPH1036816A (en) | 1996-07-29 | 1996-07-29 | Chemical machine polishing particle and chemical machine polishing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH1036816A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014042068A (en) * | 2001-06-08 | 2014-03-06 | Cree Inc | HIGH SURFACE QUALITY GaN WAFER, AND METHOD OF MANUFACTURING THE SAME |
-
1996
- 1996-07-29 JP JP8199193A patent/JPH1036816A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014042068A (en) * | 2001-06-08 | 2014-03-06 | Cree Inc | HIGH SURFACE QUALITY GaN WAFER, AND METHOD OF MANUFACTURING THE SAME |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6797074B2 (en) | Wafer edge cleaning method and apparatus | |
| US5320706A (en) | Removing slurry residue from semiconductor wafer planarization | |
| US6821902B2 (en) | Electroless plating liquid and semiconductor device | |
| US7749908B2 (en) | Edge removal of silicon-on-insulator transfer wafer | |
| JPH09260326A (en) | Cleaning of surface semiconductor wafer for removing particles | |
| US5702563A (en) | Reduced chemical-mechanical polishing particulate contamination | |
| US5830280A (en) | Washing liquid for post-polishing and polishing-cleaning method in semiconductor process | |
| JP3114156B2 (en) | Cleaning method and apparatus | |
| JPH08279483A (en) | Method and equipment for removing particulate contamination thing from semiconductor wafer | |
| US5767016A (en) | Method of forming a wiring layer on a semiconductor by polishing with treated slurry | |
| US6468135B1 (en) | Method and apparatus for multiphase chemical mechanical polishing | |
| EP1388164A2 (en) | Apparatus and method for substrate preparation implementing a surface tension reducing process | |
| JP2001135605A (en) | Manufacturing method of semiconductor device | |
| EP1145287A1 (en) | Method and apparatus for cleaning a semiconductor wafer | |
| US9941109B2 (en) | Surface treatment in a chemical mechanical process | |
| US6634930B1 (en) | Method and apparatus for preventing metal corrosion during chemical mechanical polishing | |
| JPH09139368A (en) | Chemically and mechanically polishing method | |
| JPH1036816A (en) | Chemical machine polishing particle and chemical machine polishing method | |
| US6919267B2 (en) | Method for forming wiring structure | |
| US5736463A (en) | Method and apparatus for chemical/mechanical polishing | |
| JPH09148285A (en) | Chemical-mechanical polishing particles and manufacture of semiconductor device | |
| US20030186553A1 (en) | Process and device for cleaning a semiconductor wafer | |
| US20030134576A1 (en) | Method for polishing copper on a workpiece surface | |
| JP2010278448A (en) | Polishing platen rinse for controlled passivation of silicon/polysilicon surfaces | |
| US6875087B2 (en) | Method for chemical mechanical planarization (CMP) and chemical mechanical cleaning (CMC) of a work piece |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Year of fee payment: 6 Free format text: PAYMENT UNTIL: 20090404 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Year of fee payment: 7 Free format text: PAYMENT UNTIL: 20100404 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Year of fee payment: 7 Free format text: PAYMENT UNTIL: 20100404 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110404 Year of fee payment: 8 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Year of fee payment: 9 Free format text: PAYMENT UNTIL: 20120404 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Year of fee payment: 9 Free format text: PAYMENT UNTIL: 20120404 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Year of fee payment: 10 Free format text: PAYMENT UNTIL: 20130404 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Year of fee payment: 10 Free format text: PAYMENT UNTIL: 20130404 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Year of fee payment: 11 Free format text: PAYMENT UNTIL: 20140404 |