JPH10335336A - Solder bump structure and manufacture thereof - Google Patents

Solder bump structure and manufacture thereof

Info

Publication number
JPH10335336A
JPH10335336A JP14372897A JP14372897A JPH10335336A JP H10335336 A JPH10335336 A JP H10335336A JP 14372897 A JP14372897 A JP 14372897A JP 14372897 A JP14372897 A JP 14372897A JP H10335336 A JPH10335336 A JP H10335336A
Authority
JP
Japan
Prior art keywords
solder bump
resin material
solder
semiconductor device
reinforcing resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14372897A
Other languages
Japanese (ja)
Other versions
JP3067693B2 (en
Inventor
Masayuki Kaneko
真之 金子
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP14372897A priority Critical patent/JP3067693B2/en
Publication of JPH10335336A publication Critical patent/JPH10335336A/en
Application granted granted Critical
Publication of JP3067693B2 publication Critical patent/JP3067693B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73203Bump and layer connectors
    • H01L2224/73204Bump and layer connectors the bump connector being embedded into the layer connector
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/341Surface mounted components
    • H05K3/3431Leadless components
    • H05K3/3436Leadless components having an array of bottom contacts, e.g. pad grid array or ball grid array components

Landscapes

  • Wire Bonding (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide solder bump structures and manufacture thereof whereby no crack occurs at solder bumps, even when a thermal stress occurs and the structures can be easily be separated from a substrate after mounting. SOLUTION: A semiconductor device 5 composed of a semiconductor chip, etc., has a wiring pattern 22 on its main surface 21, solder bumps 4 disposed on terminals of the pattern 22, and a reinforcing resin material 7 which is disposed on the main surface 21 of the device 5 between solder bumps 25 and bonded to approximately the lower semispherical part 24 of each solder bump. On at least a part of approximately the upper semi-spherical part 23 of each solder bump other resin 3 having no affinity with the resin material 7, remains.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、半導体装置に於て
使用されるはんだバンプ構造体及びその製造方法に関す
るものであり、殊には、BGA型半導体装置のはんだバ
ンプの補強構造に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solder bump structure used in a semiconductor device and a method of manufacturing the same, and more particularly to a solder bump reinforcing structure of a BGA type semiconductor device. .

【0002】[0002]

【従来の技術】従来、BGA型CSP(チップ・サイズ
・パッケージ)、フリップチップ等の微少なはんだバン
プ部を外部電極とする半導体装置では、長期間にわたっ
て使用すると、当該はんだバンプ部の基部にクラックが
生じることがあった。このように当該はんだバンプ部の
基部にクラックが生じるのは、半導体装置の熱膨張率と
実装する半導体基板の熱膨張率とが大きく異なることが
原因であると考えられる。
2. Description of the Related Art Conventionally, in a semiconductor device using a small solder bump portion such as a BGA type CSP (chip size package) or a flip chip as an external electrode, if used for a long period of time, a crack is formed at the base of the solder bump portion. Sometimes occurred. The reason why cracks are formed at the base of the solder bumps in this way is considered to be due to a large difference between the thermal expansion coefficient of the semiconductor device and the thermal expansion coefficient of the semiconductor substrate to be mounted.

【0003】[0003]

【発明が解決しようとする課題】上述のような不具合
は、図2に示すように、適宜のチップを含む半導体装置
5と実装基板11との間に補強樹脂10を充填し、これ
らの相対的な変位を阻止することによって、ある程度は
解消できる。しかしながら、図2に示す様に、半導体装
置5を補強用の熱硬化性樹脂10によって実装基板11
に接着してしまうと、後工程で半導体装置5あるいは実
装基板11に不良が検出された場合には、両者を分離さ
せる事が不可能であるので、当該不良品を交換して、別
の製品を搭載させることができないという問題点があっ
た。従って、歩留りが低下する原因となっていた。
As shown in FIG. 2, the above-described problem is caused by filling the reinforcing resin 10 between the semiconductor device 5 including an appropriate chip and the mounting substrate 11, and by using a resin. To some extent, it can be eliminated by preventing a large displacement. However, as shown in FIG. 2, the semiconductor device 5 is mounted on a mounting substrate 11 with a thermosetting resin 10 for reinforcement.
If a defect is detected in the semiconductor device 5 or the mounting substrate 11 in a later step, it is impossible to separate them, so that the defective product is replaced with another product. There is a problem that it cannot be mounted. Therefore, the yield has been reduced.

【0004】また、特開平8−236654号公報で開
示された方法では、はんだバンプ間にペースト状の樹脂
を流し込み、しかる後熱処理することにより樹脂層を形
成するか、あるいはペースト状の樹脂中にはんだバンプ
を浸漬し、しかる後熱処理して樹脂層を形成後、前記バ
ンプが出現するまで研磨加工すると言う方法が提案され
ている。
In the method disclosed in Japanese Patent Application Laid-Open No. Hei 8-236654, a paste-like resin is poured between solder bumps and then heat-treated to form a resin layer, or the paste-like resin is mixed in the paste-like resin. A method has been proposed in which a solder bump is immersed, then heat-treated to form a resin layer, and then polished until the bump appears.

【0005】しかしながら、かかる従来の方法に於いて
は、はんだバンプサイズが小さく、ピッチも狭い場合、
はんだバンプ間に樹脂を流し込むと、はんだバンプ上面
にも樹脂が被覆し、実装不良を起こしてしまうという問
題点があり、また、バンプが出現するまで研磨加工する
には加工精度が要求され、工数もかかるといった問題が
あった。
However, in the conventional method, when the solder bump size is small and the pitch is small,
If resin is poured between the solder bumps, there is a problem that the resin also covers the upper surface of the solder bumps, causing a mounting failure. In addition, processing accuracy is required to perform polishing until the bumps appear, There was a problem that it also took.

【0006】本発明の目的は、はんだバンプを外部電極
とする半導体装置において、熱応力が生じてもはんだバ
ンプ部に於て、クラックが発生せず、実装後も、当該基
板若しくはチップ等の半導体装置に異常が検出された場
合には、簡単に両者を分離させ、例えばチップを基板か
ら外すことができる様なはんだバンプ部はんだバンプ構
造体を提供し、又はんだバンプ構造体の製造方法を提供
するものである。
SUMMARY OF THE INVENTION It is an object of the present invention to provide a semiconductor device in which a solder bump is used as an external electrode. When an abnormality is detected in the device, the two can be easily separated from each other, and for example, a solder bump portion so that a chip can be removed from a substrate is provided, or a method of manufacturing a solder bump structure is provided. Is what you do.

【0007】[0007]

【課題を解決するための手段】本発明は上記した目的を
達成する為、以下に示す様な基本的な技術構成を採用す
るものである。即ち、本発明の第1の態様としては、半
導体装置の主表面上に設けられた配線パターンの端子部
上に配備された複数個のはんだバンプ群と、当該はんだ
バンプ間で、当該半導体装置の主表面に配置されると共
に、当該各はんだバンプの略下半球部のみと接合されて
いる補強用樹脂材料とから構成され、且つ当該各はんだ
バンプの略上半球部の少なくとも一部には、当該補強用
樹脂材料とは親和性のない他の樹脂が残存しているバン
プ構造体であり、又本発明に係る第2の態様としては、
はんだバンプを外部電極とする半導体装置において使用
されるはんだバンプ構造体の製造方法であって、当該製
造方法は、下面が平坦な柔軟材料の下面に、はんだバン
プ部に固着される補強用樹脂材料と親和性のないマスク
用樹脂材料を転写させる工程と、前記はんだバンプ部の
上面に、前記柔軟材料のゴム材の下面を押し当て前記マ
スク用樹脂材料を前記はんだバンプ部上半球面に転写塗
布する工程と、前記はんだバンプ部間にはんだバンプ部
に固着される補強用樹脂材料を所定量供給する工程と、
前記はんだバンプ部面を下面が平坦な押圧材で加圧し、
当該補強用樹脂材料を当該各はんだバンプ部の略下半球
部のみに接合固着させる工程、とを含むことをはんだバ
ンプ構造体の製造方法である。
In order to achieve the above-mentioned object, the present invention employs the following basic technical structure. That is, as a first aspect of the present invention, a plurality of solder bump groups provided on a terminal portion of a wiring pattern provided on a main surface of a semiconductor device, and between the solder bumps, Along with being disposed on the main surface, is formed of a reinforcing resin material joined to only the substantially lower hemisphere of each solder bump, and at least a portion of the substantially upper hemisphere of each solder bump includes the The reinforcing resin material is a bump structure in which other resin having no affinity remains, and as a second aspect according to the present invention,
A method of manufacturing a solder bump structure used in a semiconductor device having a solder bump as an external electrode, the manufacturing method comprising: a reinforcing resin material fixed to a solder bump portion on a lower surface of a flexible material having a flat lower surface. Transferring a resin material for a mask having no affinity with the solder bump portion, pressing the lower surface of a rubber material of the flexible material against the upper surface of the solder bump portion, and transferring and applying the resin material for a mask to the upper hemispheric surface of the solder bump portion. And a step of supplying a predetermined amount of a reinforcing resin material fixed to the solder bumps between the solder bumps,
Pressing the solder bump portion surface with a pressing material having a flat lower surface,
Bonding and fixing the reinforcing resin material only to the substantially lower hemisphere portion of each of the solder bump portions.

【0008】[0008]

【発明の実施の形態】本発明に係るはんだバンプ構造体
は、上記した様な技術構成を有していることから、当該
半導体実装装置上に設けられた、はんだバンプ部の球状
部の上半分には、当該補強用の樹脂が存在する事がな
く、一方当該はんだバンプ部の球状部の下半分には、当
該補強用樹脂が、従来と同様に強固に接着固定されてい
るものであるから、係る半導体装置を所定の半導体基板
に実装した後に、熱応力が発生しても当該はんだバンプ
部の下方部分には、クラック等が発生する事がなく、一
方、当該はんだバンプ部のの球状部の上半分には、当該
補強用の樹脂が存在していないので、当該半導体装置と
実装基板とを必要によっては容易に分離させる事が可能
となる。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The solder bump structure according to the present invention has the above-mentioned technical configuration, and therefore, the upper half of the spherical portion of the solder bump portion provided on the semiconductor mounting device. Has no reinforcing resin, while the lower half of the spherical portion of the solder bump has the reinforcing resin firmly bonded and fixed as in the prior art. Even when thermal stress occurs after mounting the semiconductor device on a predetermined semiconductor substrate, cracks and the like do not occur in the lower portion of the solder bump portion, while the spherical portion of the solder bump portion does not. Since the reinforcing resin does not exist in the upper half, the semiconductor device and the mounting substrate can be easily separated if necessary.

【0009】又、本発明に於いては、補強用樹脂材料と
親和性のないマスク用樹脂材料をゴム材等によりはんだ
バンプの上半球面に転写塗布することにより、補強用樹
脂材料を供給後、ゴム材等で加圧し、半導体装置の最外
周のはんだバンプの外側まで補強用樹脂材料を押し広げ
た時に、はんだバンプの上面に補強用樹脂材料がかぶる
ことなく、はんだバンプ基部のみに補強用樹脂材料を塗
布することができる。
Further, in the present invention, a masking resin material having no affinity with the reinforcing resin material is transferred and applied to the upper hemisphere of the solder bump with a rubber material or the like, so that the reinforcing resin material is supplied. When the reinforcing resin material is spread out to the outside of the solder bump on the outermost periphery of the semiconductor device by applying pressure with a rubber material, the reinforcing resin material does not cover the upper surface of the solder bump, but only on the base of the solder bump. A resin material can be applied.

【0010】[0010]

【実施例】以下に、本発明に係るはんだバンプ構造体及
びはんだバンプ構造体の製造方法に付いてその一具体例
の構成を図面を参照しながら詳細に説明する。図1
(D)は、本発明に係るはんだバンプ部20の一具体例
に於ける構造の概略を示す断面図であり、図中、適宜の
半導体チップ等から構成されている半導体装置5の主表
面21上に設けられた配線パターン22の端子部上に配
備された複数個のはんだバンプ部群4、4’、4”・・
・・・と、当該はんだバンプ間25で、当該半導体装置
5の主表面21に配置されると共に、当該各はんだバン
プの略下半球部24のみと接合されている補強用樹脂材
料7とから構成され、且つ当該各はんだバンプ部群4、
4’、4”・・・・・の略上半球部23の少なくとも一
部には、当該補強用樹脂材料7とは親和性のない他の樹
脂3が残存しているはんだバンプ構造体20が示されて
いる。
BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a perspective view of a solder bump structure and a method of manufacturing the same according to the present invention. FIG.
(D) is a cross-sectional view schematically showing the structure of a specific example of the solder bump portion 20 according to the present invention. A plurality of solder bump groups 4, 4 ', 4 ",... Arranged on the terminals of the wiring pattern 22 provided thereon.
.. And the reinforcing resin material 7 which is arranged on the main surface 21 of the semiconductor device 5 between the solder bumps 25 and is joined only to the substantially lower hemisphere portion 24 of each solder bump. And the respective solder bump portion groups 4,
A solder bump structure 20 in which another resin 3 having no affinity for the reinforcing resin material 7 remains on at least a part of the substantially upper hemispherical portion 23 of 4 ′, 4 ″. It is shown.

【0011】つまり、本発明に係るはんだバンプ構造体
20に於いては、当該はんだバンプ部群4、4’、4”
・・・・・は、適宜のチップからなる半導体装置5の配
線パターンが設けられている主面21の当該配線端子に
搭載されており、その球状体をしているはんだバンプ部
の略下半分の球面部に、当該はんだバンプ部4を該半導
体装置5の表面に固定的に保持する補強用の樹脂が図1
(D)に示す様に、支持部を構成する様に配置された構
成を取り、一方、当該はんだバンプ部4の球状体の上半
分の球面部には、当該補強用の樹脂が存在せず、その少
なくとも一部に僅かに当該補強用の樹脂とは親和性のな
い樹脂(マスク用の樹脂)が残存した状態を呈している
ので、当該半導体装置5をフェイスダウン方式により適
宜の半導体基板11に実装搭載させた場合でも、当該は
んだバンプ部4の上半分の球面23は、上記補強用の樹
脂を介さずに、上記半導体基板に設けられた配線部の端
子部と接続する事が出来る。
That is, in the solder bump structure 20 according to the present invention, the solder bump portion groups 4, 4 ', 4 "
... Are mounted on the wiring terminals of the main surface 21 on which the wiring pattern of the semiconductor device 5 composed of an appropriate chip is provided, and are substantially lower half of the spherical solder bump portion. In FIG. 1, a reinforcing resin for fixedly holding the solder bump portion 4 on the surface of the semiconductor device 5 is provided on the spherical portion of FIG.
As shown in (D), a configuration is adopted in which the support resin is arranged, while the reinforcing resin does not exist on the upper half spherical portion of the spherical body of the solder bump portion 4. Since the resin (mask resin) that has a slight affinity with the reinforcing resin remains in at least a part thereof, the semiconductor device 5 is mounted on the appropriate semiconductor substrate 11 by a face-down method. Even when mounted on the semiconductor substrate, the spherical surface 23 of the upper half of the solder bump portion 4 can be connected to the terminal portion of the wiring portion provided on the semiconductor substrate without the intervention of the reinforcing resin.

【0012】従って、仮に当該半導体装置5が製品不良
であった場合には、当該はんだバンプ部を構成するはん
だの融点以上の温度に再加熱することにより、当該半導
体装置5と半導体基板11とを容易に分離させる事が可
能となる。本発明に於て使用される当該補強用樹脂は特
に特定されるものではなく、従来一般的に使用されてい
る熱可塑性樹脂、熱硬化性樹脂等が使用でき、又当該補
強用樹脂に親和性の無い樹脂としても、特に限定される
ものではなく、上記補強用樹脂と一般的に見て親和性の
ない素材を使用すれば良い。
Therefore, if the semiconductor device 5 is defective, the semiconductor device 5 and the semiconductor substrate 11 are re-heated to a temperature higher than the melting point of the solder constituting the solder bump portion. It can be easily separated. The reinforcing resin used in the present invention is not particularly specified, and a thermoplastic resin, a thermosetting resin, and the like generally used conventionally can be used. The resin having no resin is not particularly limited, and a material generally having no affinity with the above-mentioned reinforcing resin may be used.

【0013】次に、本発明に於けるはんだバンプ構造体
の製造方法の一例を、図1(A)から図1(D)を参照
して詳細に説明する。即ち、本発明のはんだバンプ構造
体の製造方法は、先ず、はんだバンプ4を外部電極とす
る半導体装置5のはんだバンプ面を上面とし、補強用樹
脂材料7と親和性のないマスク用樹脂材料3をはんだバ
ンプ上面に塗布するため、マスク用樹脂材料3を回転可
能で平坦な円盤上に供給し、中心から外周端までスキー
ジをあて、円盤面とスキージの隙間を一定とし、円盤を
回転させ、円盤上にマスク用樹脂材料3を一定厚に延ば
す。次に円盤上のマスク用樹脂材料3に下面が平坦なゴ
ム材2を接触させ、ゴム材2下面にマスク用樹脂材料3
を転写させる。
Next, an example of a method for manufacturing a solder bump structure according to the present invention will be described in detail with reference to FIGS. 1 (A) to 1 (D). That is, in the method of manufacturing a solder bump structure according to the present invention, first, the solder bump surface of the semiconductor device 5 having the solder bumps 4 as external electrodes is set to the upper surface, and the masking resin material 3 having no affinity with the reinforcing resin material 7 is used. Is applied to the upper surface of the solder bumps, the masking resin material 3 is supplied on a rotatable flat disk, a squeegee is applied from the center to the outer peripheral edge, the gap between the disk surface and the squeegee is fixed, and the disk is rotated. The mask resin material 3 is spread to a certain thickness on the disk. Next, the rubber material 2 having a flat lower surface is brought into contact with the mask resin material 3 on the disk, and the mask resin material 3
Is transferred.

【0014】かくして構成した転写用のマスク用樹脂材
料3の膜を、図1(A)に示す様に、そのゴム材2の下
面を半導体装置5のはんだバンプ群4の面に押し当て、
マスク用樹脂材料3をはんだバンプ4の上半球面に転写
させる。そして、一旦マスク用樹脂材料3を加熱乾燥さ
せ、はんだバンプ4の上半球面にマスク用樹脂材料3の
膜を形成する。
The lower surface of the rubber material 2 is pressed against the surface of the solder bump group 4 of the semiconductor device 5, as shown in FIG.
The mask resin material 3 is transferred to the upper hemisphere of the solder bump 4. Then, the masking resin material 3 is once dried by heating to form a film of the masking resin material 3 on the upper hemisphere of the solder bump 4.

【0015】次いで、図1(B)に示す様に、半導体装
置5のはんだバンプ4面に補強用樹脂材料7をディスペ
ンサ6により供給し、図1(C)に示す様に、その上か
ら下面が平坦な別のゴム材9を適宜の加圧用ヘッド8を
使用して加圧し、補強用樹脂材料7を半導体装置5の最
外周のはんだバンプ4の位置まで押し広げると共に、各
はんだバンプ部4群の間の空間部25を完全に当該補強
用樹脂材料で埋めつくすものである。
Next, as shown in FIG. 1B, a reinforcing resin material 7 is supplied to the solder bump 4 surface of the semiconductor device 5 by a dispenser 6, and as shown in FIG. Another flat rubber material 9 is pressed using an appropriate pressing head 8 to spread the reinforcing resin material 7 to the position of the outermost solder bumps 4 of the semiconductor device 5, The space 25 between the groups is completely filled with the reinforcing resin material.

【0016】然しながら、本発明に於いては、当該はん
だバンプ部4の上半球部23に予め設けられた当該補強
用樹脂材料7と親和性のない材料が設けられているの
で、当該補強用樹脂材料7と該はんだバンプ部4の上半
球部23とは相互に接着される事がなく、従って、図1
(D)に示す様に、最後に補強用樹脂材料7を加熱し硬
化させ、当該補強用樹脂材料7を収縮させる事によっ
て、当該はんだバンプ4の下半球部24である基部に当
該補強用樹脂材料7が強固に樹脂膜からなる支持部を構
成する様に接着固定され、バンプ部4の上半球部23に
は、当該補強用樹脂材料7が排除されて、該補強用樹脂
材料7と親和性のない材料が、少なくとも一部に残留す
る様な状態を呈している。
However, in the present invention, since the material having no affinity with the reinforcing resin material 7 provided beforehand in the upper hemispherical portion 23 of the solder bump portion 4 is provided, the reinforcing resin material is not used. The material 7 and the upper hemispherical portion 23 of the solder bump portion 4 are not bonded to each other, and accordingly, FIG.
As shown in (D), finally, the reinforcing resin material 7 is heated and cured, and the reinforcing resin material 7 is contracted, so that the reinforcing resin material 7 is attached to the base, which is the lower hemispherical portion 24 of the solder bump 4. The material 7 is firmly adhered and fixed so as to form a support portion made of a resin film. The reinforcing resin material 7 is removed from the upper hemisphere portion 23 of the bump portion 4 and has an affinity with the reinforcing resin material 7. It has a state in which a material having no properties remains at least partially.

【0017】本発明に於いては、該マスク用樹脂材料を
転写する為に使用される材料は、ゴム材に限られるもの
ではなく、当該マスク用樹脂材料を吸着する事が出来、
且つ所定の押圧力を受けた場合に、所定の凹み状態を形
成しながら当該はんだバンプ部4の表面に接触しうる様
な弾発性と柔軟性を有する材料であれば、如何なるもの
でも使用可能である。
In the present invention, the material used to transfer the mask resin material is not limited to a rubber material, but can adsorb the mask resin material.
Any material can be used as long as the material has elasticity and flexibility so that it can come into contact with the surface of the solder bump portion 4 while forming a predetermined concave state when receiving a predetermined pressing force. It is.

【0018】同様に、当該補強用樹脂材料7を該半導体
装置5の表面から当該はんだバンプ部4間の空間部に押
し込む際に使用されるゴム材も、これに特定されるもの
ではなく、適度の弾性と柔軟性を有するものであれば使
用可能である。即ち、本発明に係るはんだバンプ構造体
の製造方法は、例えば、下面が平坦な柔軟材料の下面
に、はんだバンプ部に固着される補強用樹脂材料と親和
性のないマスク用樹脂材料を転写させる工程と、前記は
んだバンプ部の上面に、前記柔軟材料のゴム材の下面を
押し当て前記マスク用樹脂材料を前記はんだバンプ部上
半球面に転写塗布する工程と、前記はんだバンプ部間に
はんだバンプ部に固着される補強用樹脂材料を所定量供
給する工程と、前記はんだバンプ部面を下面が平坦な押
圧材で加圧し、当該補強用樹脂材料を当該各はんだバン
プ部の略下半球部のみに接合固着させる工程、とから構
成されるものである。
Similarly, the rubber material used when the reinforcing resin material 7 is pushed from the surface of the semiconductor device 5 into the space between the solder bumps 4 is not limited to this, but is appropriately specified. Any material having the above elasticity and flexibility can be used. That is, in the method of manufacturing a solder bump structure according to the present invention, for example, a mask resin material having no affinity with the reinforcing resin material fixed to the solder bump portion is transferred to the lower surface of a flexible material having a flat lower surface. A step of pressing the lower surface of the rubber material of the flexible material against the upper surface of the solder bump portion to transfer and apply the resin material for a mask to the upper semi-spherical surface of the solder bump portion; Supplying a predetermined amount of a reinforcing resin material fixed to the portion, and pressing the surface of the solder bump portion with a pressing material having a flat lower surface, and applying the reinforcing resin material only to a substantially lower hemisphere portion of each solder bump portion. And a step of bonding and fixing the same.

【0019】更に、本発明に係るはんだバンプ構造体の
製造方法に於けるより詳細な具体例としては、例えば、
はんだバンプを外部電極とする半導体装置において、下
面が平坦なゴム材の下面に補強用樹脂材料と親和性のな
いマスク用樹脂材料を転写させる工程と、前記はんだバ
ンプ面を上面とし、前記ゴム材を前記はんだバンプに押
し当て前記マスク用樹脂材料を前記はんだバンプ上半球
面に転写塗布する工程と、前記マスク用樹脂材料を加熱
し乾燥させる工程と、前記はんだバンプ面に補強用樹脂
材料を所定量供給する工程と、前記はんだバンプ面を下
面が平坦なゴム材により加圧し、補強用樹脂材料を半導
体装置の最外周のはんだバンプの外側まで押し広げる工
程と、前記補強用樹脂材料を加熱硬化させる工程とから
構成されているものである。
Further, more specific examples of the method for manufacturing a solder bump structure according to the present invention include, for example,
In a semiconductor device having a solder bump as an external electrode, a step of transferring a masking resin material having no affinity with a reinforcing resin material to a lower surface of a rubber material having a flat lower surface, Pressing the resin material onto the solder bumps to transfer and apply the resin material for mask to the upper hemispherical surface of the solder bumps; heating and drying the resin material for mask; and applying a reinforcing resin material to the solder bump surface. A step of supplying a fixed amount, a step of pressing the solder bump surface with a rubber material having a flat lower surface, and a step of spreading the reinforcing resin material to outside the outermost solder bumps of the semiconductor device; and heating and curing the reinforcing resin material And a step of performing

【0020】[0020]

【発明の効果】本発明では、上記した様な技術構成を採
用しているので、補強用樹脂材料と親和性のないマスク
用樹脂材料をゴム材等の柔軟性材料を使用してはんだバ
ンプの上半球面に転写塗布することにより、補強用樹脂
材料を供給後、当該ゴム材等の柔軟性材料で加圧し、半
導体装置の最外周のはんだバンプの外側まで補強用樹脂
材料を押し広げた時に、はんだバンプの上面に補強用樹
脂材料がかぶることなく、はんだバンプ基部のみに補強
用樹脂材料を塗布することができるという効果がある。
According to the present invention, since the above-mentioned technical structure is employed, a resin material for a mask having no affinity with a reinforcing resin material is formed by using a flexible material such as a rubber material to form a solder bump. After supplying the reinforcing resin material by transfer coating on the upper hemisphere, pressurize with a flexible material such as the rubber material and spread the reinforcing resin material to the outside of the outermost solder bump of the semiconductor device. In addition, there is an effect that the reinforcing resin material can be applied only to the base of the solder bump without covering the upper surface of the solder bump with the reinforcing resin material.

【図面の簡単な説明】[Brief description of the drawings]

【図1】図1(A)〜図1(D)は本発明に係るはんだ
バンプ構造体の製造方法の一具体例の手順を示す説明図
である。
FIGS. 1A to 1D are explanatory views showing the procedure of a specific example of a method for manufacturing a solder bump structure according to the present invention.

【図2】図2は、従来に於ける半導体装置と半導体基板
との実装状態を説明する図である。
FIG. 2 is a diagram for explaining a conventional mounting state of a semiconductor device and a semiconductor substrate.

【符号の説明】[Explanation of symbols]

1…転写用ヘッド 2…ゴム材 3…マスク用樹脂材料 4…はんだバンプ 5…半導体装置 6…ディスペンサ 7…補強用樹脂材料 8…加圧用ヘッド 9…ゴム材 10…樹脂 11…実装基板 20…はんだバンプ構造体 21…半導体装置の主面 22…半導体装置の配線パターン 23…はんだバンプ部の上半球部 24…はんだバンプ部の下半球部 25…はんだバンプ部間の空間部 REFERENCE SIGNS LIST 1 transfer head 2 rubber material 3 mask resin material 4 solder bump 5 semiconductor device 6 dispenser 7 reinforcing resin material 8 pressurizing head 9 rubber material 10 resin 11 mounting substrate 20 Solder bump structure 21: Main surface of semiconductor device 22: Wiring pattern of semiconductor device 23: Upper hemisphere of solder bump 24: Lower hemisphere of solder bump 25: Space between solder bumps

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】 半導体装置の主表面上に設けられた配線
パターンの端子部上に配備された複数個のはんだバンプ
群と、当該はんだバンプ間で、当該半導体装置の主表面
に配置されると共に、当該各はんだバンプの略下半球部
のみと接合されている補強用樹脂材料とから構成され、
且つ当該各はんだバンプの略上半球部の少なくとも一部
には、当該補強用樹脂材料とは親和性のない他の樹脂が
残存している事を特徴とするはんだバンプ構造体。
A plurality of solder bumps provided on a terminal portion of a wiring pattern provided on a main surface of the semiconductor device; and a plurality of solder bump groups arranged on the main surface of the semiconductor device between the solder bumps. A reinforcing resin material joined to only the lower hemisphere portion of each solder bump,
A solder bump structure, characterized in that at least a part of the upper hemispherical portion of each of the solder bumps has another resin having no affinity with the reinforcing resin material remaining.
【請求項2】 当該はんだバンプ部は、当該半導体基板
に実装されるチップの接続端子と接合せしめられるもの
である事を特徴とする請求項1記載のはんだバンプ構造
体。
2. The solder bump structure according to claim 1, wherein said solder bump portion is joined to a connection terminal of a chip mounted on said semiconductor substrate.
【請求項3】 はんだバンプを外部電極とする半導体装
置において使用されるはんだバンプ構造体の製造方法で
あって、当該製造方法は、 下面が平坦な柔軟材料の下面に、はんだバンプ部に固着
される補強用樹脂材料と親和性のないマスク用樹脂材料
を転写させる工程と、 前記はんだバンプ部の上面に、前記柔軟材料のゴム材の
下面を押し当て前記マスク用樹脂材料を前記はんだバン
プ部上半球面に転写塗布する工程と、 前記はんだバンプ部間にはんだバンプ部に固着される補
強用樹脂材料を所定量供給する工程と、 前記はんだバンプ部面を下面が平坦な押圧材で加圧し、
当該補強用樹脂材料を当該各はんだバンプ部の略下半球
部のみに接合固着させる工程、 とを含むことを特徴とするはんだバンプ構造体の製造方
法。
3. A method of manufacturing a solder bump structure used in a semiconductor device using a solder bump as an external electrode, the manufacturing method comprising: fixing a solder bump portion to a lower surface of a flexible material having a flat lower surface. Transferring a masking resin material having no affinity with the reinforcing resin material, and pressing the lower surface of the rubber material of the flexible material against the upper surface of the solder bump portion, and applying the masking resin material on the solder bump portion. Transferring and applying a predetermined amount of a reinforcing resin material fixed to the solder bump portion between the solder bump portion, and pressing the solder bump portion surface with a pressing material having a flat lower surface,
Bonding and fixing the reinforcing resin material only to the substantially lower hemispherical portion of each of the solder bump portions.
【請求項4】 はんだバンプを外部電極とする半導体装
置において、 下面が平坦なゴム材の下面に補強用樹脂材料と親和性の
ないマスク用樹脂材料を転写させる工程と、 前記はんだバンプ面を上面とし、前記ゴム材を前記はん
だバンプに押し当て前記マスク用樹脂材料を前記はんだ
バンプ上半球面に転写塗布する工程と、 前記マスク用樹脂材料を加熱し乾燥させる工程と、 前記はんだバンプ面に補強用樹脂材料を所定量供給する
工程と、 前記はんだバンプ面を下面が平坦なゴム材により加圧
し、補強用樹脂材料を半導体装置の最外周のはんだバン
プの外側まで押し広げる工程と、 前記補強用樹脂材料を加熱硬化させる工程とを含むこと
を特徴とする請求項3記載のはんだバンプ構造体の製造
方法。
4. A semiconductor device using a solder bump as an external electrode, a step of transferring a masking resin material having no affinity with a reinforcing resin material onto a lower surface of a rubber material having a flat lower surface; Pressing the rubber material against the solder bumps to transfer and apply the resin material for mask to the upper hemisphere of the solder bumps; heating and drying the resin material for masks; reinforcing the solder bump surface A step of supplying a predetermined amount of resin material for use, a step of pressing the solder bump surface with a rubber material having a flat lower surface, and spreading a reinforcing resin material to outside the outermost solder bumps of the semiconductor device; 4. The method for manufacturing a solder bump structure according to claim 3, further comprising a step of heating and curing the resin material.
JP14372897A 1997-06-02 1997-06-02 Solder bump structure and method of manufacturing solder bump structure Expired - Lifetime JP3067693B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14372897A JP3067693B2 (en) 1997-06-02 1997-06-02 Solder bump structure and method of manufacturing solder bump structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14372897A JP3067693B2 (en) 1997-06-02 1997-06-02 Solder bump structure and method of manufacturing solder bump structure

Publications (2)

Publication Number Publication Date
JPH10335336A true JPH10335336A (en) 1998-12-18
JP3067693B2 JP3067693B2 (en) 2000-07-17

Family

ID=15345630

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Status (1)

Country Link
JP (1) JP3067693B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6905915B2 (en) 2002-02-18 2005-06-14 Seiko Epson Corporation Semiconductor device and method of manufacturing the same, and electronic instrument
US8450859B2 (en) 2008-10-27 2013-05-28 Panasonic Corporation Semiconductor device mounted structure and its manufacturing method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6905915B2 (en) 2002-02-18 2005-06-14 Seiko Epson Corporation Semiconductor device and method of manufacturing the same, and electronic instrument
US8450859B2 (en) 2008-10-27 2013-05-28 Panasonic Corporation Semiconductor device mounted structure and its manufacturing method

Also Published As

Publication number Publication date
JP3067693B2 (en) 2000-07-17

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