JPH10313265A - Microwave transmission and reception module - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve the transmission efficiency of an RF signal and to make the whole module small by reducing the output loss by providing an FET circuit connected to the line between a high-power amplifier and a 2nd four-terminal network, and controlling the voltage applied to the FET constituting the FET circuit and controlling the potential at the output terminal of the high-power amplifier. SOLUTION: A phase unit 2 which controls the phase of the RF signal is connected to an RF terminal 1 and a switch 3 which switches the transmission line for the RF signal is connected to the phase unit 2. A driver amplifier 4 is connected to the switch 3 and a transmission system amplifier 15 is connected to the driver amplifier 4. To the transmission system amplifier 15, a hybrid 9 as a 1st four-terminal network and a hybrid 10 as the 2nd four-terminal network are connected, and high-power amplifiers 11 and 12 are provided on the line between the both. Further, FET circuits 16 and 17 as voltage control means are connected to the lines between the high-power amplifiers 11 and 12 and hybrid 10.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a microwave transmitting / receiving module used for a microwave band phased array antenna or the like.

[0002]

2. Description of the Related Art FIG. 11 and FIG.
t / Receive ModuleTechnology
y for X-Band Active Array
Radar DAVID N.R. McQuiddy et al. (Proceedingsof the IEEE V
OL. 79. No3. FIG. 2 is a diagram showing a circuit configuration of a conventional microwave transmitting / receiving module and an arrangement relationship of each device described in MICCH 1991).

In FIG. 11, an RF signal terminal 1 for inputting / outputting an RF signal transmitted / received by the microwave transceiver module of the present invention has a phase shifter (PS: Phase Shifter) for controlling the phase of the RF signal.
r) 2 is connected, and a switch (SW: SWitc) for switching the transmission line of the RF signal is connected to the phase shifter 2.
h) 3 is connected. The switch 3 includes a driver amplifier (DA) 4 for amplifying the RF signal input from the RF signal terminal 1.
And an amplifier 5 for further amplifying the RF signal amplified by the driver amplifier 4 is connected to the driver amplifier 4.

[0004] A three-terminal circulator (CIR: CIR cullator) 6 is connected to the amplifier 5. The circulator 6 has an antenna terminal 7 for connecting to an antenna (not shown) and a low-noise amplifier 8. Is connected. In addition, a low noise amplifier (LNA: Low)
The other end of the noise amplifier 8 is connected to the switch 3.

The amplifier 5 has a structure in which high-power amplifiers 11 and 12 are provided on lines connecting hybrids (HYBs) 9 and 10 which are four-terminal networks, respectively. The hybrids 9 and 10 are circuits capable of equally dividing the output of a high-frequency signal input from one terminal to each of a pair of opposite terminals and outputting the pair as a pair of high-frequency signals having a phase difference of 90 ° from each other. It is.

[0006] Among the terminals of the hybrid 9, the terminals not connected to the high power amplifiers 11 and 12 and the driver amplifier 4 are grounded.
Of the terminals of the hybrid 10 not connected to the terminals 1 and 12, the terminals not connected to the circulator 6 are also grounded. The high power amplifiers 11 and 12 are amplifiers using FETs provided with sources.

All the devices described above are MIC (MIC)
rowave Integrated Circuit
t) They are connected by a line 13 and housed in a package 10 as shown in FIG. Switch 3
In the MIC line 13 between the MIC 6 and the circulator 6, the line provided with the driver amplifier 4 and the amplifier 5 is referred to as a transmission line 13a, and the line provided with the low noise amplifier 8 is referred to as a reception line 13b.

In such a microwave transmitting / receiving module, the switch 3 and the circulator 6 are controlled so as to make the transmission line 13a conductive when transmitting the RF signal, but make the receiving line 13b conductive when receiving the RF signal. Is controlled as follows.

Therefore, when transmitting an RF signal, R
The RF signal input from the F signal terminal 1 is phase-controlled by the phase shifter 2, amplified by the driver amplifier 4 from the switch 3 through the transmission line 13 a, and further amplified by the amplifier 5 to high power. The RF signal input to the hybrid 9 of the amplifier 5 is converted into a pair of RF signals having a phase difference of 90 ° and input to the high power amplifiers 11 and 12, respectively. The pair of RF signals amplified by the high power amplifiers 11 and 12 are respectively input to the hybrid 10, phase-converted and combined in the hybrid 10, and output to a terminal connected to the circulator 6. Further, the RF signal input to circulator 6 is output to antenna terminal 7.

On the other hand, when receiving the RF signal, the RF signal input from the antenna terminal 7 is
After being amplified by the low noise amplifier 8 through the receiving line 13b, the phase is controlled by the phase shifter 2 through the switch 3,
The signal is output from the RF signal terminal 1.

[0011]

However, the conventional microwave transmitting / receiving module uses a circulator as a means for switching the transmission line between when transmitting and receiving the RF signal. There is a problem that the output loss as a wave transmitting / receiving module increases and the transmitting / receiving efficiency decreases.

In addition, such a microwave transmitting / receiving module has a plurality of modules arranged side by side for use in a phased array antenna. The pitch at which the modules are arranged is determined by the element arrangement of the antenna. Since the pitch is proportional to the wavelength used, it is necessary to reduce the width of the module as the frequency increases. However, the conventional configuration has a problem that when a device element such as a low-noise amplifier is housed in a package, the package has a very elongated shape.

Further, while it is necessary to arrange the amplifier 5 near the antenna terminal 7, the RF signal terminal 1 for supplying the RF signal is on the opposite side to the antenna signal terminal 7, so that the transmission line in the module is long. Therefore, the wiring impedance to the amplifier 5 increases. However, since a large current flows through the amplifier 5, the voltage drop in the amplifier 5 becomes large, and the output efficiency of the amplifier 5 decreases, and the voltage fluctuation during the pulse operation increases. Furthermore, when a microwave transmitting / receiving module is joined to multiple elements, a synthesizer and a distributor are required.
There has been a problem that the output loss of the entire module increases and the dimensions of the entire module also increase.

SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide a microwave transmitting / receiving module in which the output loss in the module is reduced to improve the RF signal transmission efficiency and the entire module is downsized.

[0015]

According to a microwave transmitting / receiving module of the present invention, one terminal is grounded, and a high frequency signal input from a high frequency signal terminal is converted into a pair of high frequency signals having a predetermined phase difference. A first four-terminal network that outputs from a pair of output terminals, a pair of high-power amplifiers respectively connected to the pair of output terminals, and amplifies a pair of high-frequency signals respectively output from the pair of output terminals;
A pair of voltage control means for controlling the potentials at the output terminals of the pair of high power amplifiers, a pair of terminals connected to each of the pair of output terminals of the high power amplifier, and a reception line and an antenna terminal, respectively. Having a pair of terminals, converting a pair of high-frequency signals input from a pair of terminals connected to the high-power amplifier into a high-frequency signal having a predetermined phase difference, and sending an output to the antenna terminal. The high-frequency signal input from the antenna terminal is converted into a pair of high-frequency signals having a predetermined phase difference, and then turned back at a pair of terminals connected to the output terminal of the high power amplifier to form a high-frequency signal having a predetermined phase difference again. And a second four-terminal network for transmitting the converted and combined output to the receiving line.

Further, the voltage control means is an FET circuit connected to a line between the high power amplifier and the second four-terminal network, and controls a voltage applied to the FET constituting the FET circuit. Controlling the potential of the output terminal of the high power amplifier.

The high-power amplifier further includes a stub circuit provided between the line connecting the high-power amplifier and the second four-terminal network and the FET circuit for matching the impedance of the FET circuit. It is characterized by having.

The voltage control means is a bias control circuit for controlling the bias of the high power amplifier, and controls the potential of the output terminal of the high power amplifier by controlling the operation of the FET of the high power amplifier. Features.

Further, the first four-terminal network, the second four-terminal network, the pair of high power amplifiers, the voltage control means, and the charging capacitor for supplying power to the high power amplifier are made of metal. And the other equipment is housed in a multilayer ceramic package, and the charging capacitor is arranged near the transmission system amplifier.

Further, the receiving line is constituted by a coaxial cable.

Further, a plurality of the charging capacitors are dispersed in a power supply line of a high power amplifier.

The charging capacitor is arranged on a substrate, and the substrate and the metal package and the multilayer ceramic package are opposed to each other with the charging capacitor and the metal package and the elements provided in the multilayer ceramic package facing each other. In this manner, the end face of the substrate and the end face of the metal package are joined.

Further, a phase shifter for converting the phase of the RF signal during transmission and reception of the RF signal, a FET element for amplifying the RF signal near the phase shifter, and an RF element for transmitting and receiving the RF signal M for distributing and combining signals
MIC (Monolitic Microwave)
(Integrated Circuit) distributor and MMIC combiner.

[0024]

BEST MODE FOR CARRYING OUT THE INVENTION

Embodiment 1 FIG. FIG. 1 is a circuit configuration diagram of the microwave transmitting / receiving module according to Embodiment 1 of the present invention. In the figure, an RF signal terminal 1 is connected to a phase shifter 2 for controlling the phase of an RF signal.
A switch 3 for switching a signal transmission line is connected. A driver amplifier 4 is connected to the switch 3, and a transmission system amplifier 15 is connected to the driver amplifier 4.

The transmission system amplifier 15 connects the hybrid 9 as the first four-terminal network and the hybrid 10 as the second four-terminal network, and connects the high power amplifier 1 to the line between them.
1 and 12, respectively, and further a high power amplifier 11
FET circuits 16 and 17 as voltage control means are connected to a line between the hybrid 12 and the hybrid 10, respectively.

As shown in FIG.
Is connected to an antenna terminal 7 for connecting to an antenna (not shown), and a low-noise amplifier 8 provided on a line for transmitting an RF signal received via the antenna terminal 7 to the RF signal terminal 1. The other end of the low noise amplifier 8 is connected to the switch 3. These devices are all connected by the MIC line 13.

The hybrids 9 and 10 equally divide the output of a high-frequency signal input from one terminal to each of a pair of terminals on the opposite side, and output the same as a pair of high-frequency signals having a phase difference of 90 ° from each other. It is a circuit that can be. The phase conversion at that time is performed by, for example, the driver amplifier 4
The RF signal input to the hybrid 9 from the side is output to the terminal on the high power amplifier 10 side (that is, in the direction of going straight) without performing phase conversion, but is output to the terminal on the high power amplifier 11 side (ie, , To the terminal adjacent to the terminal in the direction of going straight) to output as an RF signal having a phase of -90 °.

Note that, of the terminals of the hybrid 9 not connected to the high power amplifiers 11 and 12, the terminal not connected to the driver amplifier 4 is grounded.
Of the terminals of the hybrid 10 not connected to the high power amplifiers 11 and 12, the terminals not connected to the antenna terminal 7 are also grounded.

The high power amplifiers 11 and 12 are amplifiers using FETs whose sources are grounded. The FET circuits 16 and 17 are FETs whose sources are grounded and whose drains are connected to lines connecting the high power amplifiers 11 and 12 and the hybrid 10.

In such a microwave transmitting / receiving module, when transmitting an RF signal, the RF signal input from the RF signal terminal 1 is phase-controlled by the phase shifter 2 and then transmitted from the switch 3 to the driver amplifier 4 side. Is done. The RF signal amplified by the driver amplifier 4 is further input to the hybrid 9 of the amplifier 5, and a pair of R signals having a phase of 90 °
F signal, and further converted to a high power amplifier 1
It is amplified by 1 and 12.

When transmitting the RF signal, the gate voltage of the high power amplifiers 11 and 12 is -Vg (V) (saturated drain current (drain current when the gate voltage is 0 V)).
, The drain voltage is maintained at about 7 to 10 (V), and the FET circuits 16 and 17 are pinched off.
The drain and source are non-conductive.

As described above, at the time of transmission, the FET circuits 16, 1
Since the drain and the source do not conduct by pinch-off of 7, the RF signals amplified by the high-power amplifiers 11 and 12 are transmitted from the high-power amplifiers 11 and 12 and input to the hybrid 10, and are again input to the hybrid 10 respectively.
Are provided and combined and sent to the antenna terminal 7. At this time, no RF signal is output to the terminal of the hybrid 10 connected to the low noise amplifier 8.

On the other hand, at the time of reception, the RF signal input from the antenna terminal 7 is input to the hybrid 10. In the hybrid 10, a phase difference of 90 ° is provided and the power is divided into two and applied to the output side of the high power amplifiers 11 and 12. However, at this time, the high power amplifiers 11, 12
Means that the gate voltage is -Vp (V) (-Vp: pinch-off gate voltage (a gate voltage at which the drain current becomes 0) and about -4 to -5 (V)), and the drain voltage is 7 to 10
(V), and the FET circuits 16 and 1
7, since the drain and the grounded source are conducted by setting the gate voltage to 0 (V), the reflection coefficient に お け る in the FET circuits 16 and 17 becomes Γ = 1, and the RF signal is transmitted to the FET circuits 16 and 17. Hybrid 1 at the source
It is totally reflected to the 0 side.

The signals totally reflected on the side of the hybrid 10 at the sources of the FET circuits 16 and 17 are input to the hybrid 10, provided with a phase difference of 90 ° again, synthesized, and connected to the low noise amplifier 8. Is output only to the connected terminal. At this time, the antenna terminal 7
The two RF signals input from the terminals of the hybrid 10 connected to the high-power amplifiers 11 and 12 are also transmitted to the terminal connected to the high-power amplifiers 11 and 12, however, since these RF signals have a phase difference of 180 ° from each other, Since these signals cancel each other out when they are combined, no RF signal is output to the antenna terminal 7. Then, the RF that has been low-noise amplified by the low-noise amplifier 8
The signal is input to the phase shifter 2 via the switch 3 and subjected to phase control, and then output from the RF signal terminal 1.

As described above, according to the microwave transmitting / receiving module according to Embodiment 1 of the present invention, the FE
By controlling the drain voltage and the gate voltage of the T circuits 16 and 17, the transmission line can be switched between the transmission and reception of the RF signal without using a circulator having a large output loss. Signal transmission efficiency can be improved.

Embodiment 2 FIG. 2 is a diagram schematically showing a circuit configuration of a microwave transmitting / receiving module according to Embodiment 2 of the present invention. In the figure, a high power amplifier 1
Except that bias control devices 20 and 21 are directly connected to high power amplifiers 11 and 12 as voltage control means for controlling voltages applied to drains and gates of FETs constituting FETs 1 and 12, The configuration is the same as that of the first embodiment.

The bias control circuits 20 and 21 include a switching element and a resistance dividing circuit using a semiconductor, or
This device is configured by a D / A converter and controls voltage applied to the gates and drains of the FETs of the high power amplifiers 11 and 12. The bias control devices 20 and 21 connect the drain to V so that the high power amplifiers 11 and 12 amplify the RF signal when transmitting the RF signal.
d (V) (7 to 10 V), and the drain current of the gate is set to a saturated drain current (a voltage −Vg (V) that is の of the drain current when the gate voltage is 0 (V)). Voltage.

During reception, in order to totally reflect the RF signals transmitted from the hybrid 10 to the high power amplifiers 11 and 12 without being input to the high power amplifiers 11 and 12, the drains have 0 to 10 levels. In addition to applying the voltage of (V), a voltage is applied to the gate such that the FET becomes a saturated drain current from the voltage at which the FET is pinched off, and the output terminals 11 a and 12 of the high power amplifiers 11 and 12 are applied.
The reflection coefficient に お け る at a is set so that Γ = 1.

As described above, since the voltages applied to the gates and drains of the FETs of the high power amplifier are controlled by the bias controllers 20 and 21, the transmission of the RF signal is performed similarly to the operation in the first embodiment. In some cases, the RF signal input from the RF signal terminal 1 is output to the antenna terminal 7, and the RF signal input via the antenna terminal 7 is output to the hybrid 10 connected to the low noise amplifier 8 when receiving the RF signal. , And amplified by the low noise amplifier 8 before being sent to the RF signal terminal 1.

Therefore, according to the microwave transmitting and receiving module according to the second embodiment of the present invention, the bias control devices 20 and 21 control the drain voltage and the gate voltage of the FETs of the high power amplifiers 11 and 12, and Since the transmission line can be switched between transmission and reception, it is not necessary to use a circulator having a large output loss, and the signal transmission efficiency of the microwave transceiver module can be improved.

Embodiment 3 FIG. 3 is a diagram schematically showing a circuit configuration of a microwave transmitting / receiving module according to Embodiment 3 of the present invention. Referring to FIG.
The high power amplifiers 30 and 31 constituting the stub circuit 3
The configuration other than the configuration in which the FETs 36 and 37 are connected to the stub circuits 34 and 35 and the FET circuits 36 and 37 are the same as the configuration of the first embodiment including the operation. In addition,
The stub circuits 34 and 35 are lines for performing impedance matching of the whole of the high-power amplifiers 30 and 31, the hybrids 9 and 10, and the FET circuits 36 and 37 at the time of receiving the RF signal. Is set to １ ／ wavelength.

When the high power amplifiers 30 and 31 include such stub circuits 34 and 35, the FET circuits 36 and 3
When the drain and source of the FET circuits 36 and 37 are conducting with the gate voltage of the FET 7 being 0 V, the high power amplifier 3
Point 3 in the track connecting 0, 31 and hybrid 10
The combined impedance of the stub circuits 34 and 35 and the FET circuits 36 and 37 as viewed from 8 and 39 becomes infinite. Conversely, when the drains and sources of the FET circuits 36 and 37 are insulated with the gate voltages of the FET circuits 36 and 37 being pinch-off voltages, the stub circuits 34 and 35 and the FET circuits 36 and 37 are connected from the points 38 and 39. The combined impedance is 0Ω.

Therefore, when transmitting the RF signal, if the gate voltages of the FET circuits 30 and 31 are set to 0 V, the points 38 and 39 are set.
Stub circuits 34 and 35 and FET circuit 36
37 is infinite, the RF signals amplified by the high power amplifiers 30 and 31 are transmitted to the hybrid 10 as they are, and when the RF signals are received, the gate voltages of the FET circuits 30 and 31 are changed. As the pinch-off voltage, the combined impedance of the stub circuits 34 and 35 and the FET circuits 36 and 37 as viewed from the points 38 and 39 becomes 0Ω, so that the stub circuit 3
The reflection coefficient た of the combination of the FET circuits 4 and 35 and the FET circuits 36 and 37 is Γ = 1, and the RF signal is totally reflected toward the hybrid 10 at points 38 and 39.

As described above, similarly to the operation in the first embodiment, when transmitting an RF signal, the RF signal input from the RF signal terminal 1 is output to the antenna terminal 7 and
At the time of receiving the RF signal, the RF signal input through the antenna terminal 7 is output from the terminal of the hybrid 10 connected to the low noise amplifier 8, amplified by the low noise amplifier 8, and then output to the RF signal terminal 1. Can be sent.

As described above, according to the microwave transmitting / receiving module of Embodiment 3 of the present invention,
When transmitting or receiving a signal, the FET circuits 36, 37
However, even if the pinch-off state or the state in which the drain and the source are short-circuited cannot be respectively performed, the entire circuit including the stub circuits 34 and 35 and the FET circuits 36 and 37, which are the matching circuits, is in a non-conductive state or Since the conductive state can be achieved, it is not necessary to use a circulator having a large output loss, and the signal transmission efficiency of the microwave transceiver module can be improved.

Embodiment 4 FIG. FIG. 4 is a diagram schematically showing a circuit configuration of a microwave transceiver module according to Embodiment 4 of the present invention. In the figure, the circuit configuration and operation are the same as those of the microwave transmission / reception module according to the first embodiment, but the package accommodating the module is divided into two parts, and is composed of a metal package 40 and a multilayer ceramic package 41. Note that the multilayer ceramic package 41 is a package including a line (inner layer pattern) wired between a plurality of ceramic layers, and is a useful package for reducing the size of a module.

The metal package 40 having high heat dissipation has
A transmission system amplifier 15 (hybrid 9, 10; high power amplifiers 11, 12 and FET circuits 16, 17), which is a device having high heat generation, and an energy bank capacitor 42 as a charging capacitor are housed. The multilayer ceramic package 41 contains the phase shifter 2, the switch 3, the driver amplifier 4, and the low noise amplifier 8, which are devices having low heat generation. As shown in the figure, a capacitor 42 serving as a charging capacitor is installed near the transmission system amplifier 15.

As described above, the heat dissipation of the module can be improved by housing the transmission system amplifier 15 having a large amount of heat, such as the high power amplifiers 11 and 12, in the metal package 40.
If a low-noise amplifier 8, a driver amplifier 4, a phase shifter 2, and a switch 3 having relatively low heat generation are accommodated, power supply and control signals and the like are passed through lines (inner layer patterns) wired between layers of the multilayer ceramic package 40. Therefore, a small and small module can be obtained. An energy bank capacitor 42 is arranged near the high power amplifiers 11 and 12, and the high power amplifier 1
Voltage fluctuations during the operations 1 and 12 can be suppressed.

As described above, according to the microwave transmitting / receiving module according to Embodiment 4 of the present invention, the transmission line is switched between when transmitting and receiving an RF signal without using a circulator having a large output loss. In addition, the high heat-generating device and the low heat-generating device can be housed in separate packages, so that the package can be reduced in size and width, and the voltage during operation of the high power amplifiers 11 and 12 can be reduced. By suppressing the fluctuation, the signal transmission efficiency of the microwave transmitting / receiving module can be improved.

Embodiment 5 FIG. 5 is a diagram showing a circuit configuration of a microwave transmitting / receiving module according to Embodiment 5 of the present invention. In the figure, a line connecting the hybrid 10 and the low noise amplifier 8 includes a coaxial line 50 having a small diameter.
Further, the coaxial line 50 is provided outside the metal package 40 and the multilayer ceramic package 41. The configuration other than the provision of the coaxial line 50 is similar to that of the fourth embodiment, including the operation.

As described above, by using a line having a small output loss in signal transmission as a line for receiving an RF signal,
In a microwave transceiver module capable of transmitting and receiving an RF signal without using a circulator having a large output loss, it is possible to further improve the transmission efficiency at the time of receiving the RF signal and to further reduce the size (width) of the package. it can.

Embodiment 6 FIG. FIG. 6 is a diagram showing a circuit configuration of a microwave transmitting / receiving module according to Embodiment 6 of the present invention. In the figure, a power supply terminal 60 for supplying power to the high power amplifiers 11 and 12 via a capacitor 62 serving as a charging capacitor and a high power amplifier 11,
12 except that capacitors 62 serving as energy banks are dispersedly arranged on a power supply line 61 connecting the power supply line 12 and the power supply line 12.
This is equivalent to the configuration and operation of the first embodiment.

The capacitors 62 having different capacities (C1,
C2, C3) It is composed of a plurality of capacitors, and R
The inductance component 63 of the power supply line 61 corresponds to the pulse operation condition at the time of transmitting and receiving the F signal.
Each of the capacitances (C1, C2, C3, C4,
C2, C3) have been determined.

In such a microwave transmitting / receiving module, since the power applied from the power supply terminal 60 is supplied to the high power amplifiers 11 and 12 via the power supply line 61 and the capacitor 62, the power is generated by the pulse operation. Can be suppressed, and the pulse oscillation R
Even when the F signal is used, the signal transmission efficiency of the microwave transceiver module can be improved without using a circulator having a large output loss. In addition, since the power supply line 61 can be shortened by arranging the capacitor 62 near the high power amplifiers 11 and 12, the inductance component in the power supply line 61 is reduced accordingly, and the capacitance of the capacitor 62 is reduced. Can be reduced, and as a result, the entire module can be reduced in size.

Although the sixth embodiment has been described with reference to the case where there are three capacitors, the power supply line 61
The same effect can be obtained even if the number of capacitors 62 is changed according to the inductance component 63.

Embodiment 7 FIG. 7 and 8 schematically show a configuration of a microwave transmitting / receiving module according to Embodiment 7 of the present invention. FIG. 9 is a diagram showing a side surface of the microwave transmitting / receiving module according to Embodiment 7 of the present invention.

The microwave transmitting / receiving module shown in FIG. 7 has the same configuration as that according to the fourth embodiment, but as shown in FIG.
A plurality of capacitors 70, which are charging capacitors for supplying the electric power, are disposed on the flexible wiring board 71. The flexible wiring board 71 includes the capacitor 7
This is an effective substrate for disposing 0s at high density. Note that a power supply terminal 73 for supplying power to the capacitor 70 is provided on the flexible wiring board 71.

As shown in FIG. 9, a junction 72a at the end of a wiring 72 connecting a plurality of capacitors 70 is joined to a junction 72b connected to the transmission system amplifier 15 in the metal package 40, and The wave transmission / reception module has a structure in which a flexible package 71 on which a capacitor 70 is provided is superposed on a metal package 40 for housing each device and a multilayer ceramic package 41. As described above, in the microwave transmitting / receiving module according to the seventh embodiment, the energy bank capacitors 70 are dispersedly arranged on the flexible printed circuit board 71, and the transmission system amplifier 1
The power is supplied in the vicinity of the power supply 5.

Therefore, the power applied from the power supply terminal 73 is smoothed through the flexible wiring board 71 and the capacitor 70 for the energy bank, and is applied to the transmission system amplifier 15. With such a configuration, more capacitors 70 can be arranged in less places, and the power supply voltage supplied to the transmission system amplifier 15 can be stabilized. As a result, the transmission line can be switched between transmission and reception of the RF signal without using a circulator having a large output loss, and the signal transmission efficiency of the microwave transceiver module can be improved.

Embodiment 8 FIG. FIG. 10 is a diagram showing a configuration of a microwave transmitting / receiving module according to Embodiment 8 of the present invention. The figure shows a configuration in which four microwave transceiver modules are integrated. In the figure, a switch 3 is directly connected to an RF signal terminal 1, and a switch MMIC (Monolithic Microwave) for a transmission system for making a module monolithic is connected to the switch 3.
e Integrated Circuit) An active distributor 80 and a receiving system MMIC active combiner 81 are connected. Note that the configuration and operation of each module shown in the figure conform to the first embodiment.

As shown, the MMIC active distributor 80 and the MMIC active combiner 81 are connected to the driver amplifier 4 and the low noise amplifier 8, respectively. The MMIC active distributor 80 includes a transmission system matching circuit 82 connected to the switch 3 and four FET elements 83 a and 8 whose gates are connected to the transmission system matching circuit 82.
3b, 83c and 83d, and phase shifters 84a to 84d connected to the drains of the FET elements 83a to 83d, respectively.

Also, the MMIC active combiner 81
A receiving system matching circuit 85 connected to the switch 3; four FET elements 86a, 86b, 86c, 86d having drains connected to the receiving system matching circuit 85;
To phase shifters 87a to 87d connected to the gates of
87d. Note that the FET elements 83a to 83a to
The sources of 83d and 86a-86d are grounded. These devices are all contained in one package (not shown).

In such a microwave transmission / reception module, when transmitting an RF signal, the signal input from the RF signal terminal 1 is supplied to the MMIC active distributor 80 by the switch 3. In the MMIC active distributor 80, the RF signal is matched by the transmission system matching circuit 82, amplified by the FET elements 83a to 83d, and the phase is controlled by the phase shifters 84a to 84d. Note that the RF signals output from the phase shifters 84a to 84d are transmitted in the same manner as in the first embodiment, and transmitted to the respective antenna terminals 88a to 88d.

When receiving the RF signal, the RF signal output from the low noise amplifier 8 is input to the MMIC-based active combiner 81. In the MMIC active combiner 81, the respective signals are controlled in phase by the phase shifters 87a to 87d, then amplified by the FET elements 86a to 86d and matched by the receiving system matching circuit 85, and
The signal is sent to the signal terminal 1.

As described above, by using the distributor and the combiner for monolithicizing each of the transmission system line and the reception system line, the matching impedance between each FET element and each phase shifter can be arbitrarily set. In addition to being able to select, a circuit having low loss and excellent reflection characteristics can be miniaturized. As a result, the transmission line can be switched between transmission and reception of the RF signal without using a circulator having a large output loss, and the signal transmission efficiency of the microwave transceiver module can be improved.

[0066]

According to the microwave transmitting / receiving module of the present invention, one terminal is grounded, a high-frequency signal input from a high-frequency signal terminal is converted into a pair of high-frequency signals having a predetermined phase difference, and a pair of output signals is output. A first four-terminal network output from the terminals, a pair of high-power amplifiers respectively connected to the pair of output terminals, for amplifying a pair of high-frequency signals respectively output from the pair of output terminals, and a pair of high-power amplifiers A pair of voltage control means for controlling the potential of the output terminal of the amplifier,
It has a pair of terminals connected to each of a pair of output terminals of the high power amplifier, and a pair of terminals connected to the receiving line and the antenna terminal, respectively, and from the pair of terminals connected to the high power amplifier, respectively. A pair of high-frequency signals having a predetermined phase difference are converted from the input pair of high-frequency signals into high-frequency signals having a predetermined phase difference, and the combined output is transmitted to the antenna terminal. And a second four-terminal network that returns the signal to a pair of terminals connected to the output terminal of the high power amplifier, converts the signal back to a high-frequency signal having a predetermined phase difference, and sends the combined output to the receiving line. It is characterized by having
Since the transmission line can be switched between when transmitting and receiving a high-frequency signal without using a circulator having a large output loss, by reducing the output loss during transmission,
The signal transmission efficiency of the microwave transmission / reception module can be improved.

The voltage control means is an FET circuit connected to a line between the high power amplifier and the second four-terminal network, and controls a voltage applied to the FETs constituting the FET circuit. Control the potential of the output terminal of the high power amplifier, thereby enabling the potential control of the output terminal of the high power amplifier with a simple configuration and improving the signal transmission efficiency of the microwave transceiver module. Can be.

The high power amplifier further includes a stub circuit provided between the line connecting the high power amplifier and the second four-terminal network and the FET circuit for matching the impedance of the FET circuit. The microwave transmission / reception module is characterized in that even if the FET circuit alone cannot achieve impedance matching with the high-power amplifier and the second four-terminal network, impedance matching can be reliably achieved with a simple structure. Signal transmission efficiency can be improved.

The voltage control means is a bias control circuit for controlling the bias of the high power amplifier, and controls the potential of the output terminal of the high power amplifier by controlling the operation of the FET of the high power amplifier. With this feature, the potential at the output terminal of the high power amplifier can be reliably controlled with a simple structure, and the signal transmission efficiency of the microwave transceiver module is improved by reducing the output loss during transmission of high-frequency signals. Can be done.

Further, the first four-terminal network, the second four-terminal network, the pair of high power amplifiers, the voltage control means, and the charging capacitor for supplying power to the high power amplifier are made of metal. In addition to being housed in a package, other equipment is housed in a multilayer ceramic package, and a charging capacitor is placed near the transmission system amplifier. By storing the device having low heat generation in a package useful for downsizing the module, the signal transmission efficiency of the microwave transceiver module can be improved and the module can be downsized.

Further, since the receiving line is constituted by a coaxial cable, the noise figure can be improved, and the signal transmission efficiency at the time of receiving a high-frequency signal can be further improved. .

Further, since a plurality of the charging capacitors are dispersed in the power supply line of the high power amplifier, voltage fluctuations caused by the pulse operation can be suppressed, and the RF signal that oscillates the pulse can be transmitted. Even in the case of using the circulator, it is not necessary to use a circulator having a large output loss, and the signal transmission efficiency of the microwave transceiver module can be improved. Furthermore, by disposing the charging capacitor near the high power amplifier, the power supply line can be shortened. As a result, the inductance component in the power supply line is reduced accordingly, so that the capacitance of the charging capacitor can be reduced. The whole module can be reduced in size.

Further, the charging capacitor is disposed on the substrate, and the substrate and the metal package and the multilayer ceramic package are opposed to each other with the charging capacitor and the elements provided in the metal package and the multilayer ceramic package facing each other. In this way, the end face of the substrate and the end face of the metal package are joined,
The size of the module can be reduced, and the charging capacitors can be arranged at a high density.

Further, a phase shifter for converting the phase of the RF signal when transmitting and receiving the RF signal, an FET element for amplifying the RF signal near the phase shifter, and an RF element for transmitting and receiving the RF signal M for distributing and combining signals
MIC (Monolitic Microwave)
Since the integrated circuit includes a distributor and an MMIC combiner, the FET
The matching impedance between the element and the phase shifter can be arbitrarily selected, the loss can be reduced, and the circuit having excellent reflection characteristics can be miniaturized.

[Brief description of the drawings]

FIG. 1 is a circuit configuration diagram of a microwave transceiver module according to Embodiment 1 of the present invention.

FIG. 2 is a diagram schematically illustrating a circuit configuration of a microwave transceiver module according to Embodiment 2 of the present invention;

FIG. 3 is a diagram schematically showing a circuit offensive of a microwave transmitting / receiving module according to Embodiment 3 of the present invention.

FIG. 4 is a diagram schematically showing a circuit configuration of a microwave transceiver module according to Embodiment 4 of the present invention.

FIG. 5 is a diagram schematically showing a circuit configuration of a microwave transmitting / receiving module according to Embodiment 5 of the present invention.

FIG. 6 is a diagram schematically showing a circuit configuration of a microwave transmitting / receiving module according to Embodiment 6 of the present invention.

FIG. 7 is a diagram schematically showing a circuit configuration of a microwave transmitting / receiving module according to Embodiment 7 of the present invention.

FIG. 8 is a diagram schematically showing a circuit configuration of a microwave transmitting / receiving module according to Embodiment 7 of the present invention.

FIG. 9 is a diagram schematically showing a circuit configuration of a microwave transmitting / receiving module according to Embodiment 7 of the present invention.

FIG. 10 is a diagram schematically showing a circuit configuration of a microwave transmitting / receiving module according to Embodiment 8 of the present invention.

FIG. 11 is a diagram schematically showing a circuit configuration of a conventional microwave transmitting / receiving module.

FIG. 12 is a side view schematically showing a configuration of a conventional microwave transmitting / receiving module.

[Explanation of symbols]

9 hybrid (first four-terminal network), 10 hybrid (second four-terminal network), 11, 12, 30, 31 high power amplifier, 15, 38 transmission system amplifier, 16, 17,
36, 37 FET circuit (voltage control means), 20, 21
Bias control circuit (voltage control means), 34, 35 stub circuit, 40 metal package (metal package), 41 multilayer ceramic package, 42, 62,
70 capacitor (charging capacitor), 50 coaxial line, 71 flexible wiring board (board), 80 MM
IC active distributor, 81 MMIC active combiner.

Claims (9)

[Claims] A first terminal having one terminal grounded, converting a high-frequency signal input from the high-frequency signal terminal into a pair of high-frequency signals having a predetermined phase difference, and outputting from the pair of output terminals; A network, a pair of high-power amplifiers respectively connected to the pair of output terminals, and amplifying a pair of high-frequency signals respectively output from the pair of output terminals; and a potential at an output terminal of the pair of high-power amplifiers. And a pair of terminals connected to each of a pair of output terminals of the high power amplifier, and a pair of terminals respectively connected to a receiving line and an antenna terminal. When a pair of high-frequency signals input from a pair of terminals connected to the high-power amplifier is converted into a high-frequency signal having a predetermined phase difference and the combined output is sent to the antenna terminal. To
The high-frequency signal input from the antenna terminal is converted into a pair of high-frequency signals having a predetermined phase difference, and then turned back at a pair of terminals connected to the output terminal of the high-power amplifier, and then again returned to have a predetermined phase difference. And a second four-terminal network for transmitting the combined output to the receiving line. 2. The method according to claim 1, wherein the voltage control means includes a FET connected to a line between the high power amplifier and the second four-terminal network.
2. The microwave transmitting / receiving module according to claim 1, wherein the microwave transmitting / receiving module is a circuit, and controls a potential applied to an output terminal of the high power amplifier by controlling a voltage applied to an FET constituting the FET circuit. 3. The high-power amplifier is provided between a line connecting the high-power amplifier and the second four-terminal network and the FET circuit, and adapted to match the impedance of the FET circuit. The microwave transceiver module according to claim 2, further comprising a stub circuit. 4. The voltage control means is a bias control circuit for controlling a bias of the high power amplifier, and controls a potential of an output terminal of the high power amplifier by controlling an operation of an FET of the high power amplifier. The microwave transmission / reception module according to claim 1, wherein: 5. A charging capacitor for supplying power to said first four-terminal network, said second four-terminal network, said pair of high power amplifiers, said voltage control means and said high power amplifier, is made of metal. 5. The package according to claim 1, wherein the charging capacitor is disposed near the transmission system amplifier while the other devices are stored in a multilayer ceramic package. The microwave transmitting / receiving module as described in the above. 6. The microwave transmitting / receiving module according to claim 5, wherein the receiving line is formed of a coaxial cable. 7. The microwave transmitting / receiving module according to claim 5, wherein a plurality of the charging capacitors are dispersed in a power supply line of the high power amplifier. 8. The charging capacitor is disposed on a substrate, and the substrate, the metal package, and the multilayer ceramic package are provided on the charging capacitor, the metal package, and the multilayer ceramic package. The microwave transmitting / receiving module according to any one of claims 5 to 7, wherein an end face of the substrate and an end face of the metal package are joined so that the elements are opposed to each other. 9. A phase shifter for converting the phase of the RF signal when transmitting and receiving the RF signal, an FET element for amplifying the RF signal near the phase shifter, and transmitting and receiving the RF signal. MMIC (Monolithic Microwa) that distributes and combines the RF signal at the time of reception
The microwave transmitting / receiving module according to any one of claims 1 to 8, further comprising: a (Integrated Circuit) distributor and an MMIC combiner.