JPH10308561A - Gallium nitride compound semiconductor light-emitting device and its manufacture - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a gallium nitride compound semiconductor light-emitting device which has a good re-growth interface, and has an internal current blocking layer having excellent electric characteristics and optical characteristics and high reliability. SOLUTION: A Mg-doped or N-type In0.95 Ga0.05 N re-evaporation layer 60 is grown on a Mg-doped Al0.1 Ga0.9 N clad layer 6. Then, at the second crystal growth step, a portion not covered with an N-type or high-resistance Al0.05 Ga0.95 N internal current blocking layer 7, of the Mg-doped or N-type In0.95 Ga0.05 N re-evaporation layer 60, that is, the re-evaporation layer 60, is evaporated in a N2 atmosphere with a substrate temperature not lower than 400 deg.C, and a clean surface 17 of the Mg-doped Al0.1 Ga0.9 N clad layer 6 is thus exposed.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a gallium nitride-based compound semiconductor light emitting device and a method of manufacturing the same, and more particularly, to a gallium nitride-based compound semiconductor laser capable of emitting light in the blue to ultraviolet region. The present invention relates to a gallium-based compound semiconductor light emitting device and a method for manufacturing the same.

[0002]

2. Description of the Related Art InGaAlP having an internal current blocking layer
Japanese Patent Application Laid-Open Publication No.
There is one disclosed in Japanese Patent No. 89568. FIG.
The sectional structure of this InGaAlP-based compound semiconductor light emitting device is shown. The structure will be described below together with a schematic manufacturing process.

In an MOCVD apparatus, an N-type GaAs substrate 2
N-type GaAs buffer layer 201 and N-type InGa
AlP cladding layer 202, InGaAlP active layer 20
3, P-type InGaAlP first cladding layer 204, N-type I
nGaAlP internal current blocking layer 207, P-type InGaAl
The P second cladding layer 206 and the P-type InGaP contact layer 209 are stacked.

[0004] Next, the N-type G having the above-mentioned laminated structure is formed.
The aAs substrate 200, that is, the wafer is taken out of the MOCVD apparatus and is subjected to a heat treatment to obtain an N-type InGaAl.
A part (both sides) of the P internal current blocking layer 207 is changed to a P-type conductivity type 205.

The reference numeral 208 in the drawing denotes a P-type InGaP
A contact layer, 209 is a P-type electrode, and 211 is an N-type electrode.

[0006]

As a semiconductor light emitting device having an internal current blocking layer, the above-mentioned InGa
In addition to the AlP-based compound semiconductor light-emitting device, for example, a gallium nitride-based compound semiconductor light-emitting device is known, and the device structure and manufacturing method of such an InGaAlP-based compound semiconductor light-emitting device will be applied to a gallium nitride-based compound semiconductor light-emitting device. If so, there are the following problems.

When the gallium nitride-based compound semiconductor layer is etched by wet etching or dry etching, the surface of the underlying layer exposed by the etching is exposed to the air, so that the exposed surface is oxidized or Problems such as the attachment of contaminants to the exposed surface occur.

For this reason, if a regrowth layer is laminated on the exposed surface, a good regrowth interface cannot be obtained.

In addition, in the dry etching method,
Problems such as damage to the etching surface or mixing of etching gas species occur. For this reason, if a regrowth layer is laminated on the exposed surface, a good regrowth interface cannot be obtained even in this regard.

Therefore, in the gallium nitride-based compound semiconductor light emitting device to which the above structure is applied, the electrical characteristics are deteriorated due to the increase in resistance due to the carrier depletion at the regrowth interface, or the crystallinity of the regrown layer is deteriorated. There is a problem that optical characteristics are deteriorated due to the above.

Under these circumstances, a gallium nitride-based compound semiconductor light emitting device having a good regrowth interface, excellent electrical and optical characteristics, and having a highly reliable internal current blocking layer has been inevitably realized. It is currently being requested.

SUMMARY OF THE INVENTION The present invention has been made in view of the above situation, and has a good regrowth interface, excellent electrical and optical characteristics, and a highly reliable internal current blocking layer. An object of the present invention is to provide a gallium-based compound semiconductor light emitting device and a method for manufacturing the same.

[0013]

The gallium nitride based compound semiconductor light emitting device of the present invention is a gallium nitride based compound semiconductor light emitting device comprising a substrate and a laminated structure provided on the substrate. A body, an active layer, a pair of cladding layers sandwiching the active layer, a re-evaporation layer formed partially on the clad layer of the pair of clad layers remote from the substrate; Having an internal current blocking layer formed thereon, wherein the reevaporation layer has a function of cleaning the surface of the clad layer of the pair of clad layers that is farthest from the substrate, whereby The above object is achieved.

Preferably, the reevaporation layer is In _z Ga _{1 -z}
N (0 <z ≦ 1), and the active layer is In _y Ga _1-y N (0 ≦
y ≦ 1: y = 0 when x = 0), the cladding layer is made of Al
_x Ga _1-x N (0 ≦ x <1) and the internal current blocking layer
It is assumed that l _w Ga _1-w N (0 ≦ w ≦ 1).

Preferably, an evaporation preventing layer is provided between the reevaporation layer and the internal current blocking layer.

Preferably, the reevaporation layer is In _z
Ga _1-z N (0 <z ≦ 1), wherein the active layer is In _y Ga _1-y
N (0 ≦ y ≦ 1: y ≠ 0 when x = 0), the cladding layer is Al _x Ga _1-x N (0 ≦ x <1), and the evaporation preventing layer is Al _{w ′} Ga _{1-w ′} N (0 ≦ w ′ ≦ 1) and the current blocking layer are Al _w Ga _1-w N (0 ≦ w ≦ 1).

Preferably, a surface protection layer is provided on the internal current blocking layer.

Preferably, the surface protective layer is provided on the clad layer remote from the substrate so as to cover the reevaporation layer and the internal current blocking layer.

Preferably, the reevaporation layer is In _z
Ga _1-z N (0 <z ≦ 1), wherein the active layer is In _y Ga _1-y
N (0 ≦ y ≦ 1: y ≠ 0 when x = 0), the cladding layer is Al _x Ga _1-x N (0 ≦ x <1), and the internal current blocking layer is Al _w Ga _1-w N (0 ≦ w ≦ 1) and the surface protective layer is made of Al _{x ′} Ga _{1−x ′} N (0 ≦ x ′ <1).

Preferably, the substrate is a first conductivity type substrate, and the laminated structure is formed on the first conductivity type buffer layer and the first conductivity type buffer layer. A first conductive type clad layer, an active layer formed on the first conductive type clad layer, a second conductive type clad layer formed on the active layer, and a second conductive type clad A second conductivity type or first conductivity type reevaporation layer formed on the layer, a first conductivity type or high resistance internal current blocking layer formed on the reevaporation layer, and the internal current blocking layer. And a second conductivity type contact layer formed so as to cover it.

Preferably, the substrate is a non-conductive substrate, and the laminated structure includes a first buffer layer formed on the substrate, and a first conductive layer formed on the first buffer layer. A second buffer layer, a first conductive type clad layer formed on the second buffer layer, an active layer formed on the first conductive type clad layer, and formed on the active layer. A second conductivity type cladding layer, a first conductivity type or a second conductivity type re-evaporation layer formed on the second conductivity type cladding layer,
An internal current blocking layer of the first conductivity type or high resistance formed on the reevaporation layer and a contact layer of the second conductivity type formed so as to cover the internal current blocking layer.

Preferably, a first conductivity type or high resistance evaporation preventing layer is provided between the reevaporation layer and the internal current blocking layer.

Preferably, a second conductivity type surface protection layer is provided on the internal current blocking layer.

Preferably, the temperature of the evaporation substrate of the reevaporation layer is 550 ° C. or higher, preferably 550 ° C. to 800 ° C.
So that

Preferably, the temperature of the evaporation substrate of the reevaporation layer is 400 ° C. to 800 ° C., preferably 400 ° C. to 800 ° C.
650 ° C.

Preferably, the growth temperature of the evaporation preventing layer is 400 ° C. or more, preferably 400 ° C. to 550 ° C.

Preferably, the evaporation preventing layer and the current blocking layer are grown while the temperature is raised to 400 ° C. to 1200 ° C.

Preferably, the growth temperature of the surface protective layer is set to 400 ° C. to 650 ° C.

Preferably, an N-type or P-type electrode is provided on the laminated structure, and a bonding electrode is provided thereon, and the bonding electrode is provided at the center of the internal current blocking layer. It is configured to be located directly above.

Further, the method of manufacturing a gallium nitride-based compound semiconductor light emitting device of the present invention is characterized in that an N-type GaN buffer layer and an N-type Al _x Ga ₁ -xN (0 ≦ x <1) first cladding are formed on an N-type substrate. Forming a layer, and forming In _y on the first cladding layer.
Forming a Ga _1-y N (0 ≦ y ≦ 1: y ≠ 0 when x = 0) active layer; and forming a P-type Al _x Ga _1-x N on the active layer.
(0 ≦ x <1) forming a second cladding layer, and forming a P-type or N-type In _z Ga _{1 -zN} (0 <z
≦ 1) forming a re-evaporation layer, forming an N-type or high-resistance Al _w Ga _1-w N (0 ≦ w ≦ 1) internal current blocking layer on the re-evaporation layer, Re-evaporating the evaporation layer to expose the surface of the second cladding layer;
forming an aN contact layer, thereby achieving the above object.

Further, the method for manufacturing a gallium nitride based compound semiconductor light emitting device of the present invention is characterized in that a P-type GaN buffer layer and a P-type Al _x Ga ₁ -xN (0 ≦ x <1) first cladding are formed on a P-type substrate. Forming a layer, and forming In _y on the first cladding layer.
Forming a Ga _1-y N (0 ≦ y ≦ 1: y ≠ 0 when x = 0) active layer, and forming an N-type Al _x Ga _1-x N on the active layer;
(0 ≦ x <1) a step of forming a second cladding layer, and an N-type or P-type In _z Ga _{1 -zN} (0 <z
≦ 1) forming a re-evaporation layer, forming a P-type or high-resistance Al _w Ga _1-w N (0 ≦ w ≦ 1) internal current blocking layer on the re-evaporation layer, Re-evaporating the evaporation layer to expose the surface of the second cladding layer;
forming an aN contact layer, thereby achieving the above object.

[0032] A method of manufacturing a gallium nitride-based compound semiconductor light-emitting device of the present invention, Al _d Ga in the non-conductive type on a substrate
Forming a _1-d N (0 ≦ d ≦ 1) first buffer layer, an N-type GaN second buffer layer, and an N-type Al _x Ga _1-x N (0 ≦ x <1) first cladding layer; On the first cladding layer, I
forming an n _y Ga _1-y N (0 ≦ y ≦ 1: y ≠ 0 when x = 0) active layer, and forming a P-type Al _x Ga _1-x N on the active layer
(0 ≦ x <1) forming a second cladding layer, and forming a P-type or N-type In _z Ga _{1 -zN} (0 <z
≦ 1) forming a re-evaporation layer, forming an N-type or high-resistance Al _w Ga _1-w N (0 ≦ w ≦ 1) internal current blocking layer on the re-evaporation layer, Re-evaporating the evaporation layer to expose the surface of the second cladding layer;
Forming an N-contact layer, thereby achieving the above object.

Further, the method of manufacturing a gallium nitride-based compound semiconductor light emitting device of the present invention comprises the steps of: forming an Al _d Ga on a non-conductive substrate;
Forming a _1-d N (0 ≦ d ≦ 1) first buffer layer, a P-type GaN second buffer layer, and a P-type Al _x Ga _1-x N (0 ≦ x <1) first cladding layer; On the first cladding layer, I
forming an n _y Ga _1-y N (0 ≦ y ≦ 1: y ≠ 0 when x = 0) active layer, and forming an N-type Al _x Ga _1-x N on the active layer;
(0 ≦ x <1) a step of forming a second cladding layer, and an N-type or P-type In _z Ga _{1 -zN} (0 <z
≦ 1) forming a re-evaporation layer, forming an N-type or high-resistance Al _w Ga _1-w N (0 ≦ w ≦ 1) internal current blocking layer on the re-evaporation layer, Re-evaporating the evaporation layer to expose the surface of the second cladding layer;
forming an aN contact layer, thereby achieving the above object.

Further, the method of manufacturing a gallium nitride-based compound semiconductor light emitting device of the present invention is characterized in that an N-type GaN buffer layer and an N-type Al _x Ga ₁ -xN (0 ≦ x <1) first clad are formed on an N-type substrate. Forming a layer, and forming In _y on the first cladding layer.
Forming a Ga _1-y N (0 ≦ y ≦ 1: y ≠ 0 when x = 0) active layer; and forming a P-type Al _x Ga _1-x N on the active layer.
(0 ≦ x <1) forming a second cladding layer, and forming a P-type or N-type In _z Ga _{1 -zN} (0 <z
≦ 1) forming a re-evaporation layer, and forming an N-type or high-resistance Al _{w ′} Ga _{1-w ′} N (0 <w ′ <1) evaporation prevention layer on the re-evaporation layer; Forming an N-type or high-resistance Al _w Ga _1-w N (0 ≦ w ≦ 1) internal current blocking layer on the evaporation preventing layer; and re-evaporating the reevaporation layer to form a second clad layer. A step of exposing the surface and thereafter a P-type Al _{x '} Ga
Forming a _1-x′N (0 ≦ x ′ <1) contact layer, thereby achieving the above object.

Further, the method of manufacturing a gallium nitride-based compound semiconductor light emitting device of the present invention is characterized in that a P-type GaN buffer layer and a P-type Al _x Ga ₁ -xN (0 ≦ x <1) first clad are formed on a P-type substrate. Forming a layer, and forming In _y on the first cladding layer.
Forming a Ga _1-y N (0 ≦ y ≦ 1: y ≠ 0 when x = 0) active layer, and forming an N-type Al _x Ga _1-x N on the active layer;
(0 ≦ x <1) a step of forming a second cladding layer, and an N-type or P-type In _z Ga _{1 -zN} (0 <z
≦ 1) a step of forming a re-evaporation layer, and a step of forming a P-type or high-resistance Al _{w ′} Ga _{1-w ′} N (0 <w ′ <1) evaporation prevention layer on the re-evaporation layer; Forming a P-type or high-resistance Al _w Ga _1-w N (0 ≦ w ≦ 1) internal current blocking layer on the evaporation preventing layer, re-evaporating the reevaporation layer, and forming the second cladding layer Exposing the surface of P-type Al _{x ′} Ga
Forming a _1-x′N (0 ≦ x ′ <1) contact layer, thereby achieving the above object.

[0036] A method of manufacturing a gallium nitride-based compound semiconductor light-emitting device of the present invention, Al _d Ga in the non-conductive type on a substrate
Forming a _1-d N (0 ≦ d ≦ 1) first buffer layer, an N-type GaN second buffer layer, and an N-type Al _x Ga _1-x N (0 ≦ x <1) first cladding layer; On the first cladding layer, I
forming an n _y Ga _1-y N (0 ≦ y ≦ 1: y ≠ 0 when x = 0) active layer, and forming a P-type Al _x Ga _1-x N on the active layer
(0 ≦ x <1) forming a second cladding layer, and forming a P-type or N-type In _z Ga _{1 -zN} (0 <z
≦ 1) forming a re-evaporation layer, and forming an N-type or high-resistance Al _{w ′} Ga _{1-w ′} N (0 <w ′ <1) evaporation prevention layer on the re-evaporation layer; Forming an N-type or high-resistance Al _w Ga _1-w N (0 ≦ w ≦ 1) internal current blocking layer on the evaporation preventing layer; re-evaporating the reevaporation layer to form the second cladding layer; Exposing the surface of P-type Al _{x ′} Ga
Forming a _1-x′N (0 ≦ x ′ <1) contact layer, thereby achieving the above object.

Further, the method of manufacturing a gallium nitride-based compound semiconductor light emitting device of the present invention comprises the steps of: forming an Al _d Ga on a non-conductive substrate;
Forming a _1-d N (0 ≦ d ≦ 1) first buffer layer, a P-type GaN second buffer layer, and a P-type Al _x Ga _1-x N (0 ≦ x <1) first cladding layer; On the first cladding layer, I
forming an n _y Ga _1-y N (0 ≦ y ≦ 1: y ≠ 0 when x = 0) active layer, and forming an N-type Al _x Ga _1-x N on the active layer;
(0 ≦ x <1) a step of forming a second cladding layer, and an N-type or P-type In _z Ga _{1 -zN} (0 <z
≦ 1) forming a re-evaporation layer, and forming an N-type or high-resistance Al _{w ′} Ga _{1-w ′} N (0 <w ′ <1) evaporation prevention layer on the re-evaporation layer; Forming an N-type or high-low Al _w Ga _1-w N (0 ≦ w ≦ 1) internal current blocking layer on the evaporation preventing layer; re-evaporating the reevaporation layer to form the second cladding layer; And exposing the surface of N-type Al _{x '} Ga
Forming a _1-x′N (0 ≦ x ′ <1) contact layer, thereby achieving the above object.

Further, the method of manufacturing a gallium nitride-based compound semiconductor light emitting device of the present invention is characterized in that an N-type GaN buffer layer and an N-type Al _x Ga ₁ -xN (0 ≦ x <1) first cladding are formed on an N-type substrate. Forming a layer, and forming In _y on the first cladding layer.
Forming a Ga _1-y N (0 ≦ y ≦ 1: y ≠ 0 when x = 0) active layer; and forming a P-type Al _x Ga _1-x N on the active layer.
(0 ≦ x <1) forming a second cladding layer, and forming a P-type or N-type In _z Ga _{1 -zN} (0 <z
≦ 1) forming a reevaporation layer, forming an N-type or high-resistance Al _w Ga _{1 -wN} (0 ≦ w ≦ 1) internal current blocking layer on the reevaporation layer, Forming a current blocking layer in a convex shape, re-evaporating the reevaporation layer to expose the surface of the second cladding layer, and forming a P-type Al _{x ′} Ga _{1-x ′} N (0
≦ x ′ <1) a step of forming a surface protective layer, and
Forming a GaN type contact layer, thereby achieving the above object.

Further, the method of manufacturing a gallium nitride-based compound semiconductor light emitting device of the present invention comprises the steps of: providing a P-type GaN buffer layer and a P-type Al _x Ga ₁ -xN (0 ≦ x <1) first cladding on a P-type substrate; Forming a layer, and forming In _y on the first cladding layer.
Forming a Ga _1-y N (0 ≦ y ≦ 1: y ≠ 0 when x = 0) active layer, and forming an N-type Al _x Ga _1-x N on the active layer;
(0 ≦ x <1) a step of forming a second cladding layer, and an N-type or P-type In _z Ga _{1 -zN} (0 <z
≦ 1) forming a re-evaporation layer, forming a P-type or high-resistance Al _w Ga _1-w N (0 ≦ w ≦ 1) internal current blocking layer on the re-evaporation layer, Forming a current blocking layer in a convex shape, re-evaporating the reevaporation layer to expose the surface of the second cladding layer, and forming an N-type Al _{x ′} Ga _{1-x ′} N (0
≦ x ′ <1) a step of forming a surface protective layer, and
Forming a GaN type contact layer, thereby achieving the above object.

[0040] A method of manufacturing a gallium nitride-based compound semiconductor light-emitting device of the present invention, Al _d Ga in the non-conductive type on a substrate
Forming a _1-d N (0 ≦ d ≦ 1) first buffer layer, an N-type GaN second buffer layer, and an N-type Al _x Ga _1-x N (0 ≦ x <1) first cladding layer; On the first cladding layer, I
forming an n _y Ga _1-y N (0 ≦ y ≦ 1: y ≠ 0 when x = 0) active layer, and forming a P-type Al _x Ga _1-x N on the active layer
(0 ≦ x <1) forming a second cladding layer, and forming a P-type or N-type In _z Ga _{1 -zN} (0 <z
≦ 1) forming a reevaporation layer, forming an N-type or high-resistance Al _w Ga _{1 -wN} (0 ≦ w ≦ 1) internal current blocking layer on the reevaporation layer, Forming a current blocking layer in a convex shape, re-evaporating the reevaporation layer to expose the surface of the second cladding layer, and forming a P-type Al _{x ′} Ga _{1-x ′} N (0
≦ x ′ <1) a step of forming a surface protective layer, and
Forming a GaN type contact layer, thereby achieving the above object.

Further, the method of manufacturing a gallium nitride-based compound semiconductor light emitting device of the present invention provides a method of manufacturing an Al _d Ga on a non-conductive substrate.
Forming a _1-d N (0 ≦ d ≦ 1) first buffer layer, a P-type GaN second buffer layer, and a P-type Al _x Ga _1-x N (0 ≦ x <1) first cladding layer; On the first cladding layer, I
forming an n _y Ga _1-y N (0 ≦ y ≦ 1: y ≠ 0 when x = 0) active layer, and forming an N-type Al _x Ga _1-x N on the active layer;
(0 ≦ x <1) a step of forming a second cladding layer, and an N-type or P-type In _z Ga _{1 -zN} (0 <z
≦ 1) forming a reevaporation layer, forming an N-type or high-resistance Al _w Ga _{1 -wN} (0 ≦ w ≦ 1) internal current blocking layer on the reevaporation layer, Forming a current blocking layer in a convex shape, re-evaporating the reevaporation layer to expose the surface of the second cladding layer, and forming an N-type Al _{x ′} Ga _{1-x ′} N (0
≦ x ′ <1) a step of forming a surface protective layer, and
Forming a GaN type contact layer, thereby achieving the above object.

The operation of the present invention will be described below.

Etching is performed by wet etching or dry etching to form an InzGa1-zN evaporation layer (Z ≠).
If the process is performed up to 0), problems such as oxidation of the exposed surface, adhesion of contaminants, damage to the etched surface, mixing of etching gas species, etc. occur in the InzGa1-zN evaporation layer (Z ≠ 0).

In the present invention, however, a re-evaporation layer is provided,
For example, the re-evaporated layer is removed in an N ₂ atmosphere in a MOCVD apparatus. Therefore, the surface of the clean second clad layer can be exposed, and the exposed surface is not oxidized, and there is no problem such as attachment of contaminants. Therefore, a good regrowth interface can be obtained even if a regrowth layer is laminated on the exposed surface of the second clad layer.

Here, the InzGa1-zN evaporation layer (Z ≠
Since the substrate temperature required for the re-evaporation of 0) can be at a sufficiently low substrate temperature, the second clad layer and the internal current blocking layer can be easily re-evaporated without being affected by the temperature in the re-evaporation temperature region. As a result of removing the evaporation layer, a clean second clad layer surface can be easily exposed.

The device structure capable of re-evaporating the re-evaporation layer at a low temperature makes it possible to manufacture an internal current blocking type gallium nitride-based compound semiconductor light emitting device or a semiconductor laser, thereby providing a highly reliable gallium nitride. A compound semiconductor light emitting device can be realized.

When the internal current blocking layer is directly laminated on the reevaporation layer at a high temperature, for example, 1050 ° C., the underlying InGa
It is difficult to control the thickness and composition of the N-based re-evaporation layer.
According to the configuration in which, for example, an AlGaN-based evaporation preventing layer is formed on the nGaN-based re-evaporation layer, the above problem is solved.

Here, the conditions for laminating the AlGaN-based evaporation preventing layer are such that the substrate temperature is 400 ° C. or higher, preferably 400 to 55 ° C.
Laminate in a temperature range of 0 ° C.
The evaporation preventing layer and the internal current blocking layer may be laminated while raising the temperature to -1050 ° C.

Further, according to the configuration in which the surface protective layer is provided,
For example, when the layers are stacked at 1050 ° C., impurities, Ga, and N are released from the surface of the cladding layer. However, these are prevented by covering with a surface protective layer formed at a low temperature. Therefore, according to this configuration, a better regrowth interface can be reliably obtained.

Further, according to the configuration in which the bonding electrode is disposed just above the center of the current blocking layer, light from the active layer is not blocked, so that the external luminous efficiency can be improved.

[0051]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the present invention will be specifically described below with reference to the drawings. Note that the gallium nitride-based semiconductor referred to in the present invention is Ga _c Al _e In _1-ce N (0 <c
≦ 1, 0 ≦ e <1, 0 <c + e ≦ 1). In addition, the gallium nitride-based compound semiconductor light emitting device according to the present invention refers to a semiconductor laser or a light emitting diode.

(Embodiment 1) FIGS. 1 and 2 show a gallium nitride based compound semiconductor light emitting device according to Embodiment 1 of the present invention.
The gallium nitride-based compound semiconductor light emitting device of the first embodiment is manufactured by using an organic metal compound vapor deposition method (hereinafter referred to as MOCVD method), and an N-type SiC substrate is used as a substrate.
Ammonia NH ₃ as a group V material, trimethylgallium (TMG), trimethylaluminum (TMA), trimethylindium (TMI) as a group III material, biscyclopentadienylmagnesium (Cp ₂ Mg) as a P-type impurity and N-type impurity Monosilane (Si
H ₄ ) and H ₂ and N ₂ as carrier gases.

It should be noted that a group V raw material other than the substrate, a group III raw material,
The same P-type impurity, N-type impurity and carrier gas are used in Embodiments 2 to 12 described later.

FIG. 1 shows the device structure of the gallium nitride-based compound semiconductor light emitting device of the first embodiment. This gallium nitride-based compound semiconductor light emitting device is manufactured through the manufacturing process shown in FIGS. Hereinafter, the first embodiment
The structure of the gallium nitride-based compound semiconductor light-emitting device will be described together with the manufacturing process.

First, in order to perform the first crystal growth, an N-type SiC substrate (wafer) 1 is introduced on a susceptor of an MOCVD apparatus, and the substrate temperature is increased to about 1200 ° C. to perform a surface treatment. Next, the substrate temperature of the N-type SiC substrate 1 is set to 50.
The temperature is lowered to about 0 ° C. to 650 ° C., and an N-type AlGaN buffer layer 2 is grown on the N-type SiC substrate 1 to about 10 nm to 100 nm.

Subsequently, the substrate temperature is raised to about 1050 ° C., and an N-type GaN layer 3 is grown on the N-type AlGaN buffer layer 2 by about 0.5 μm to 4 μm. Subsequently, an N-type Al _0.1 Ga _0.9 N cladding layer 4 is formed thereon to a thickness of _0.1 μm to _0.1 μm.
Grow about 3 μm.

Next, the substrate temperature is lowered to about 800 ° C. to 850 ° C., and a non-doped In _0.15 Ga _0.85 N active layer 5 is formed on the N-type Al _0.1 Ga _0.9 N cladding layer 4 by 3 nm to 80 nm.
Let it grow. Next, the substrate temperature is raised to about 1050 ° C., and a Mg-doped Al _0.1 Ga _0.9 N cladding layer 6 is formed on the non-doped In _0.15 Ga _0.85 N active layer 5 in a thickness of _0.1 μm to _0.1 μm.
Grow about 3 μm. Subsequently, a Mg-doped or N-type In _0.95 Ga _0.05 N re-evaporation layer 60 is formed thereon to a thickness of 10 nm or more.
Grow 100 nm. Next, an N-type or high-resistance Al _0.05 Ga _0.95 N internal current blocking layer 7 is grown thereon by 0.5 μm (see FIG. 3A).

Next, once the wafer is taken out of the growth chamber, a resist mask 100 (or SiOx or _Sx) is formed on the N type or high resistance Al _0.05 Ga _0.95 N internal current blocking layer 7.
An insulating film made of iN _x ) is formed, and an N-type or high-resistance Al _0.05 Ga _0.95
A part of the resist mask 100 on the N internal current blocking layer 7 is formed, for example, in a circular shape (see FIG. 2B).

In the first embodiment, a part of the resist mask 100 is formed in a circular shape. However, the resist mask 100 may be formed in an arbitrary shape other than a circular shape.
The same applies to any of the embodiments described later.

Next, the wafer is subjected to wet-etching or dry-etching to form an Mg-doped or N-type In _0.95
Etching 16 is performed until the surface of the Ga _0.05 N re-evaporation layer 60 is exposed, and the resist mask 100 is removed with a hydrofluoric acid-based etchant or an organic solvent (see FIG. 3C).

More specifically, the above-mentioned etching step
For example, BCl ₃ / Ar or CC in reactive ion etching (RIE) or reactive ion beam etching using electron cyclotron resonance (ECR-RlBE)
Mg-doped or N-type In using a gas such as l ₂ F ₂ / Ar
Etching 16 is performed until the surface of the _0.95 Ga _0.05 N re-evaporation layer 60 is exposed. This etching step is performed in the same manner in each of the embodiments described later, but a specific example will be described here as a representative, and the description will be omitted in the following embodiments.

Next, the wafer is again introduced onto the susceptor of the MOCVD apparatus, and the second crystal growth is performed.

In this growth step, first, a substrate temperature of about 40
Mg-doped or N-type In _{0.95 in} an N ₂ atmosphere at 0 ° C. or more
The Ga _0.05 N re-evaporation layer 60, that is, the portion of the re-evaporation layer 60 that is not covered by the N-type or high-resistance Al _0.05 Ga _0.95 N internal current blocking layer 7 is evaporated to remove pure Mg-doped A.
The surface of the l _0.1 Ga _0.9 N cladding layer 6 is exposed 17 (see FIG. 4D).

Next, the substrate temperature is raised to about 1050 ° C., and the Mg-doped or N-type In _0.95 Ga _0.05 N re-evaporation layer 6 is formed.
A Mg-doped GaN contact layer 8 is formed on the Mg-doped Al _0.1 Ga _0.9 N cladding layer 6 so as to cover the 0 and N-type or high-resistance Al _0.05 Ga _0.95 N internal current blocking layer 7 by _0.5 μm.
It is grown by about m to 1 μm (see FIG. 3E).

Next, the wafer is taken out of the MOCVD apparatus and heat-treated at 800 ° C. in an N ₂ atmosphere.
Change the g-doped layer to P-type. Then, a P-type electrode 9 is formed on the P-type GaN contact layer 8. Also, N
An N-type electrode 11 is formed on the bottom surface of the type SiC substrate 1 (see FIG. 1F).

Next, a bonding electrode (Au) 10 having a thickness of 500 nm to 800 nm is formed at a desired position of the P-type electrode 9.
(See FIG. 3G).

Here, it is preferable that the bonding electrode 10 is formed just above the center of the current blocking layer 7. That is, in this case, the light emission from the active layer 5 can be improved without blocking the light. About such an arrangement position, it is the same also about Embodiment 2-Embodiment 12 mentioned later. Therefore, any of the embodiments described below can achieve the same effect.

Through the above manufacturing process, an internal current blocking type gallium nitride-based compound semiconductor light emitting device of the first embodiment having the device structure shown in FIG. 1 is manufactured.

According to the gallium nitride-based compound semiconductor light emitting device of the first embodiment, the Mg-doped or N-type In _0.95 Ga _0.05 N reevaporation layer 60 is removed by evaporation in an N ₂ atmosphere in a MOCVD apparatus. Therefore, the surface of the clean Mg-doped Al _0.1 Ga _0.9 N clad layer 6 can be exposed. Therefore, since there is no occurrence of oxidation and adhesion of contaminants on the exposed surface, the Mg-doped GaN contact layer 8, that is, the regrowth layer can be laminated on the surface of the Mg-doped Al _0.1 Ga _0.9 N clad layer 6. A regrowth interface is obtained.

Here, Mg-doped or N-type In _0.95 Ga
_0.05 for the substrate temperature required to re-evaporation of N re-evaporation layer 60 may be at a sufficiently low substrate temperature, Mg-doped Al _0.1
Ga _0.9 N cladding layer 6 and N-type or high-resistance Al _0.05 G
Since the a _0.95 N internal current blocking layer 7 can easily remove the re-evaporation layer without being affected by temperature in this re-evaporation temperature region, clean Mg-doped Al _0.1 Ga _0.9 N
The surface of the clad layer 6 can be easily exposed.

As described above, according to the gallium nitride-based compound semiconductor light emitting device of the first embodiment, a good regrowth layer having few crystal defects can be obtained. It was confirmed that the luminance can be improved about twice as compared with the conventional gallium nitride-based compound semiconductor light emitting device.

As described above, according to the gallium nitride-based compound semiconductor light-emitting device of the first embodiment, the gallium nitride-based compound semiconductor light-emitting device has a high-quality regrowth interface, has excellent electrical characteristics and external luminous efficiency, and has high reliability. A compound semiconductor light emitting device can be realized.

(Embodiment 2) FIG. 3 shows a gallium nitride based compound semiconductor light emitting device according to Embodiment 2 of the present invention. The gallium nitride-based compound semiconductor light emitting device of the second embodiment uses a P-type SiC substrate as a substrate. FIG. 3 (a)
The manufacturing process will be described based on (g).

First, in order to perform the first crystal growth, a P-type SiC substrate 1p is introduced on a susceptor of a MOCVD apparatus, and the substrate temperature is increased to about 1200 ° C. to perform a surface treatment. Next, the substrate temperature of the P-type SiC substrate 1p is set to 500 ° C.
The temperature was lowered to about 650 ° C., and Mg was placed on the P-type SiC substrate 1p.
The doped AlGaN buffer layer 22 has a thickness of 10 nm to 100 n.
grow about m. Subsequently, the substrate temperature was raised to about 1050 ° C., and M was added on the Mg-doped AlGaN buffer layer 22.
The g-doped GaN layer 33 is grown to about 0.5 μm to 4 μm. Next, an Mg-doped A1 _0.1 Ga _0.9 N cladding layer 44 is grown thereon by about _0.1 μm to 0.3 μm.

Next, the substrate temperature is lowered to about 800 ° C. to 850 ° C., and the Mg-doped Al _0.1 Ga _0.9 N cladding layer 44 is cooled.
A non-doped In _0.15 Ga _0.85 N active layer 5 is formed on the
Grow to 80 nm. Next, the substrate temperature was raised to about 1050 ° C., and an N-type Al _0.1 Ga _0.9 N clad layer 66 was formed on the non-doped In _0.15 Ga _0.85 N active layer 5 to a thickness of 0.1 μm or more.
After growing about 0.3 μm, a Mg-doped or N-type In _0.95 Ga _0.05 N re-evaporation layer 61 is formed thereon to a thickness of 10 nm or more.
Grow 100 nm. Next, Mg-doped or N-type In
_{On the 0.95} Ga _0.05 N re-evaporation layer 61, an Mg-doped or high-resistance Al _0.05 Ga _0.95 N internal current blocking layer 77 is grown to a thickness of 0.5 μm (see FIG. 3A).

Next, once the wafer is taken out of the growth chamber, a resist mask 100 (or SiO _{x) is formed} on the Mg-doped or high-resistance Al _0.05 Ga _0.95 N internal current blocking layer 77.
Or an insulating film made of SiN _x ), and Mg-doped or high-resistance Al
A part of the resist mask 100 on the _0.05 Ga _0.95 N internal current blocking layer 77 is formed, for example, in a circular shape (see FIG. 3B).

Next, this wafer is subjected to wet-etching or dry-etching to be doped with Mg or N-type In.
Etching 16 is performed until the surface of the _0.95 Ga _0.05 N re-evaporation layer 61 is exposed, and then the resist mask 100 is removed with a hydrofluoric acid-based etchant or an organic solvent (see FIG. 3C).

Next, the wafer is introduced again onto the susceptor of the MOCVD apparatus, and the second crystal growth is performed.

In this growth step, first, a substrate temperature of about 40
0 ℃ above, in an N ₂ atmosphere, Mg-doped or N-type In
_{The 0.95} Ga _0.05 N re-evaporation layer 61 is evaporated to expose the surface of the clean Mg-doped Al _0.1 Ga _0.9 N cladding layer 66 17
(See FIG. 3D).

Next, the substrate temperature is raised to about 1050 ° C., and the Mg-doped or N-type In _0.95 Ga _0.05 N re-evaporation layer 6 is formed.
1 and Mg-doped Al _0.1 Ga _0.9N so as to cover the internal current blocking layer 77 of Al-doped or high-resistance Al _0.05 Ga _0.95 N.
An N-type GaN contact layer 88 is formed on the cladding layer 66 in a 0.1.
It grows up to about 5 μm to 1 μm (see FIG. 3E).

Next, the wafer is taken out of the MOCVD apparatus and heat-treated at 800 ° C. in an N ₂ atmosphere.
Change the g-doped layer to P-type. Then, the N-type electrode 11 is formed on the N-type GaN contact layer 88. Further, a P-type electrode 9 is formed on the bottom surface of the P-type SiC substrate 1p (see FIG. 3F).

Next, a bonding electrode (Au) 10 having a thickness of 500 nm to 800 n is formed at a desired position on the N-type electrode 11.
m (see FIG. 3G). Through the above manufacturing process, the internal current blocking type gallium nitride based compound semiconductor light emitting device of Embodiment 2 is manufactured.

Also in the second embodiment, the Mg-doped or N-type In _0.95 Ga _0.05 N re-evaporation layer 61 is removed by evaporation, and the surface of the clean Mg-doped Al _0.1 Ga _0.9 N clad layer 66 is exposed. Therefore, similarly to Embodiment 1, a highly reliable gallium nitride-based compound semiconductor light-emitting device having a high-quality regrowth interface, having excellent electrical characteristics and external luminous efficiency, and having high reliability can be realized.

(Embodiment 3) FIGS. 4 and 5 show a gallium nitride based compound semiconductor light emitting device according to Embodiment 3 of the present invention.
The gallium nitride-based compound semiconductor light emitting device of the third embodiment uses a sapphire substrate
A part of the aN layer 3 is exposed by etching, and an N-type electrode 11 is formed on the exposed surface. FIG. 5A to FIG.
The details of the manufacturing process will be described based on (g).

First, in order to perform the first crystal growth, the sapphire substrate 1 ′ is introduced onto a susceptor of the MOCVD apparatus, and the temperature is raised to about 1200 ° C. to perform a surface treatment. Next, the substrate temperature of the sapphire substrate 1 ′ is set to 400 ° C.
The temperature was lowered to about 650 ° C, and Al was placed on the sapphire substrate 1 '.
_0.05 Ga _0.95 N buffer layer 2 ′ is 20 nm to 100 nm
Let it grow.

Next, the substrate temperature was raised to about 1050 ° C., and N-type GaN was deposited on the Al _0.05 Ga _0.95 N buffer layer 2 ′.
A layer 3 is grown to a thickness of about _0.5 nm to 4 nm, and an N-type Al _0.1 Ga _0.9 N cladding layer 4 is further formed thereon to a thickness of _0.1 nm to 4 nm.
Grow about 0.3 nm.

Next, the substrate temperature is lowered to about 800 ° C. to 850 ° C., and a non-doped In _0.15 Ga _0.85 N active layer 5 is formed on the N-type Al _0.1 Ga _0.9 N cladding layer 4 to a thickness of 3 nm to 80 nm.
Let it grow. Next, the substrate temperature is raised to about 1050 ° C., and a Mg-doped Al _0.1 Ga _0.9 N cladding layer 6 is formed on the non-doped In _0.15 Ga _0.85 N active layer 5 in a thickness of _0.1 μm to _0.1 μm.
Then, a Mg-doped or N-type In _0.95 Ga _0.05 N re-evaporation layer 60 is formed thereon to a thickness of 10 nm to 10 μm.
Grow 0 nm. Next, Mg-doped or N-type In _0.95
N-type or high-resistance Al _0.05 G on the Ga _0.05 N re-evaporation layer 60
a _0.95 N internal current blocking layer 7 is grown to a thickness of 0.5 μm (see FIG. 3A).

Next, the wafer is once taken out of the growth chamber, and a resist mask 100 (or SiO _x or S _x) is formed on the N-type or high-resistance Al _0.05 Ga _0.95 N internal current blocking layer 7.
an insulating film made of iN _x ), and subsequently, using an ordinary photolithography technique, an N-type or high-resistance Al _0.05
Resist mask 10 on Ga _0.95 N internal current blocking layer 7
A part of 0 is formed into, for example, a circular shape (see FIG. 3B).

Next, this wafer is subjected to wet-etching or dry-etching to obtain Mg-doped Al _0.1 Ga.
Etching until _0.9 N clad layer 6 surface is exposed 16
Then, the resist mask 100 is removed with a hydrofluoric acid-based etchant or an organic solvent (see FIG. 3C).

Next, the wafer is again introduced onto the susceptor of the MOCVD apparatus, and the second crystal growth is performed.

In this growth step, first, a substrate temperature of about 40
0 ℃ above, in an N ₂ atmosphere, Mg-doped or N-type In
_{The 0.95} Ga _0.05 N re-evaporation layer 60 is evaporated to expose 17 the surface of the clean Mg-doped Al _0.1 Ga _0.9 N clad layer 6 (see FIG. 4D).

Next, the substrate temperature is raised to about 1050 ° C., and the Mg-doped or N-type In _0.95 Ga _0.05 N re-evaporation layer 6 is formed.
A 0.5 nm Mg-doped GaN contact layer 8 is formed on the Mg-doped Al _0.1 Ga _0.9 N cladding layer 6 so as to cover the 0 and N-type or high-resistance Al _0.05 Ga _0.95 N internal current blocking layer 7.
It grows up to about 1 nm (see FIG. 3E).

Next, the wafer is taken out of the MOCVD apparatus and heat-treated at 800 ° C. in an N ₂ atmosphere.
Change the g-doped layer to P-type. Next, in order to perform N-type electrode attachment, etching 20 is performed until the surface of the N-type GaN layer 3 is exposed (see FIG. 6F).

Next, the P-type GaN contact layer 8 is
Forming electrode 9 is formed, and N-type electrode 11 is formed on the exposed surface of N-type GaN layer 3. Subsequently, a bonding electrode (Au) 10 having a thickness of 500 nm to 800 nm is formed at a desired position of the P-type electrode 9 (see FIG. 3G).
Through the above manufacturing process, the internal current blocking type gallium nitride-based compound semiconductor light emitting device of the third embodiment is manufactured.

Also in the third embodiment, the Mg-doped or N-type In _0.95 Ga _0.05 N re-evaporation layer 60 is removed by evaporation to expose the surface of the clean Mg-doped Al _0.1 Ga _0.9 N clad layer 6. Embodiment 1
And as in Embodiment 2, having a high quality regrowth interface,
A highly reliable gallium nitride-based compound semiconductor light emitting device having excellent electrical characteristics and external luminous efficiency can be realized.

(Embodiment 4) FIG. 6 shows a gallium nitride based compound semiconductor light emitting device according to Embodiment 4 of the present invention. The gallium nitride-based compound semiconductor light emitting device of the fourth embodiment uses a sapphire substrate
A part of the layer 33 is exposed by etching, and the P-type electrode 9 is formed on the exposed surface. FIG. 6A to FIG.
The manufacturing process will be described based on (g).

First, in order to perform the first crystal growth, the sapphire substrate 1 ′ is introduced onto a susceptor of an MOCVD apparatus, and the temperature is raised to about 1200 ° C. to perform a surface treatment. Next, the substrate temperature of the sapphire substrate 1 ′ is set to 400 ° C.
The temperature was lowered to about 650 ° C, and Al was placed on the sapphire substrate 1 '.
_0.05 Ga _0.95 N buffer layer 2 ′ is 20 nm to 100 nm
Let it grow.

Next, the substrate temperature is raised to about 1050 ° C., and a Mg-doped GaN layer 33 is grown on the Al _0.05 Ga _0.95 N buffer layer 2 ′ by about 0.5 μm to 4 μm. Al _0.1 Ga _0.9 N clad layer 4
4 is grown about 0.1 μm to 0.3 μm. Next, the substrate temperature is decreased to about 800 ° C. to 850 ° C., Mg-doped Al _0.1 Ga _0.9 N doped In on the cladding layer 44
_{A 0.15} Ga _0.85 N active layer 5 is grown to a thickness of 3 nm to 80 nm.

Next, the substrate temperature was raised to about 1050 ° C., and N-type A was added on the non-doped In _0.15 Ga _0.85 N active layer 5.
l _0.1 Ga _0.9 N cladding layer 66 is _0.1 μm to 0.3 μm
m, and then a Mg-doped or N-type In _0.95 Ga _0.05 N re-evaporation layer 61 having a thickness of 10 nm to 100 n.
m. Next, Mg-doped or N-type In _0.95 Ga
_0.05 Mg-doped or high-resistance Al _0.05 on N re-evaporation layer 61
A Ga _0.95 N internal current blocking layer 77 is grown to a thickness of 0.5 μm (see FIG. 3A).

Next, once the wafer is taken out of the growth chamber, the resist mask 100 (or SiO _{x) is formed} on the Mg-doped or high-resistance Al _0.05 Ga _0.95 N internal current blocking layer 77.
Or an insulating film made of SiN _x ), and then, using a normal photolithography technique, a part of the resist mask 100 on the Mg-doped or high-low Al _0.05 Ga _0.95 N internal current blocking layer 77 is _removed . For example, the shape is circular (see FIG. 3B).

Next, the wafer is subjected to etching 16 by wet etching or dry etching until the surface of the N-type Al _0.1 Ga _0.9 N clad layer 66 is exposed.
The resist mask 100 is removed with a hydrofluoric acid-based etchant or an organic solvent (see FIG. 3C).

Next, the wafer is again introduced onto the susceptor of the MOCVD apparatus, and the second crystal growth is performed.

In this growth step, first, a substrate temperature of about 40
0 ℃ above, in an N ₂ atmosphere, Mg-doped or N-type In
_{The 0.95} Ga _0.05 N re-evaporation layer 60 is evaporated to expose the surface 17 of the clean Mg-doped Al _0.1 Ga _0.9 N clad layer 66 (see FIG. 4D).

Next, the substrate temperature is raised to about 1050 ° C., and the Mg-doped or N-type In _0.95 Ga _0.05 N re-evaporation layer 6 is formed.
0 and Mg-doped or high-resistance Al _0.05 Ga _0.95 Mg doped to N cover the internal current blocking layer 77 Al _0.1 Ga _0.9 N
An N-type GaN contact layer 88 is formed on the cladding layer 66 in a 0.1.
It grows up to about 5 μm to 1 μm (see FIG. 3E).

Next, the wafer is taken out of the MOCVD apparatus and heat-treated at 800 ° C. in an N ₂ atmosphere.
Change the g-doped layer to P-type. Next, in order to attach a P-type electrode, etching 20 is performed until the surface of the P-type GaN layer 33 is exposed (see FIG. 6F).

Next, an N-type electrode 11 is formed on the N-type GaN contact layer 88. The P-type electrode 9 is formed on the exposed surface of the P-type GaN layer 33. Subsequently, a bonding electrode (Au) 10 is formed at a desired position on the N-type electrode 11 in a thickness of 500 nm to 800 nm (see FIG. 3G). Through the above manufacturing process, the internal current blocking type gallium nitride based compound semiconductor light emitting device of Embodiment 4 is manufactured.

Also in the fourth embodiment, the Mg-doped or N-type In _0.95 Ga _0.05 N re-evaporation layer 60 is removed by evaporation to expose the surface of the clean Mg-doped Al _0.1 Ga _0.9 N clad layer 66. Therefore, similarly to Embodiments 1 to 3, having a high-quality regrowth interface,
A highly reliable gallium nitride-based compound semiconductor light emitting device having excellent electrical characteristics and external luminous efficiency can be realized.

Embodiment 5 FIGS. 7 and 8 show a gallium nitride based compound semiconductor light emitting device according to Embodiment 5 of the present invention.
The gallium nitride-based compound semiconductor light-emitting device of the fifth embodiment has an evaporation prevention layer formed on the reevaporation layer, which is different from the gallium nitride-based compound semiconductor light-emitting device of the first to fourth embodiments. It is very different. The gallium nitride-based compound semiconductor light-emitting devices according to Embodiments 6 to 8 described below also have an evaporation prevention layer formed on the reevaporation layer, similarly to the gallium nitride-based compound semiconductor light-emitting device according to Embodiment 5.

FIG. 7 shows an element structure of a gallium nitride-based compound semiconductor light emitting element of the fifth embodiment. This gallium nitride-based compound semiconductor light emitting device is manufactured through a manufacturing process shown in FIGS. Hereinafter, the fifth embodiment
The structure of the gallium nitride-based compound semiconductor light-emitting device will be described together with the manufacturing process.

First, in order to perform the first crystal growth, the N-type SiC substrate 1 is introduced on the susceptor of the MOCVD apparatus.
The substrate temperature is raised to about 1200 ° C. to perform a surface treatment.
Next, the substrate temperature of the N-type SiC substrate 1 is set to 500 ° C. to 650 ° C.
The temperature is lowered to about ℃, and the N-type AlGa
The N buffer layer 2 is grown to about 10 to 100 nm.

Next, the substrate temperature is raised to about 1050 ° C., and an N-type GaN layer 3 is grown on the N-type AlGaN buffer layer 2 by about 0.5 μm to 4 μm.
Type Al _0.1 Ga _0.9 N clad layer 4 is _0.1 μm-0.3
Growing about μm.

Next, the substrate temperature is lowered to about 800 ° C. to 850 ° C., and a non-doped In _0.15 Ga _0.85 N active layer 5 is formed on the N-type Al _0.1 Ga _0.9 N cladding layer 4 to a thickness of 3 nm to 80 nm.
Let it grow. Next, the substrate temperature is raised to about 1050 ° C., and a Mg-doped Al _0.1 Ga _0.9 N cladding layer 6 is formed on the non-doped In _0.15 Ga _0.85 N active layer 5 in a thickness of _0.1 μm to _0.1 μm.
Then, a Mg-doped or N-type InN reevaporation layer 60 is grown thereon to a thickness of 10 nm to 100 nm.

Next, the substrate temperature is lowered to about 400 ° C. to 550 ° C., and an N-type or high-resistance Al _0.05 Ga _0.95 N evaporation preventing layer 71 is grown on the Mg-doped or N-type InN re-evaporation layer 60 by 10 nm to 100 nm. Let it. Next, a substrate temperature of 10
Raise the temperature to about 50 ° C and use N-type or high-resistance Al _0.05 Ga
_0.95 N-type or high-resistance Al _0.1 Ga
_{A 0.9} N current blocking layer 7 is grown by 0.5 μm (see FIG. 3A).

Here, N-type or high-resistance Al _0.05 Ga _0.95
N evaporation preventing layer 71 and N-type or high-resistance Al _0.1 Ga _0.9 N
The current blocking layer 7 can be grown continuously while lowering the substrate temperature to about 400 ° C. to 550 ° C. and increasing the temperature to about 1050 ° C.

Next, the wafer is once taken out of the growth chamber, and a resist mask 100 (or an insulating film made of SiO _x or SiN _x ) is formed on the N-type or high-resistance Al _0.1 Ga _0.9 N current blocking layer 7. Subsequently, a part of the resist mask 100 on the N-type or high-resistance Al _0.1 Ga _0.9 N current blocking layer 7 is formed in, for example, a circular shape by using a normal photolithography technique (see FIG. 2B). ).

Next, this wafer is subjected to wet-etching or dry-etching to obtain Mg-doped or N-type In.
Etching 16 is performed until the surface of the _0.95 Ga _0.05 N re-evaporation layer 60 is exposed, and then the resist mask 100 is removed with a hydrofluoric acid-based etchant or an organic solvent (see FIG. 3C).

Next, the wafer is introduced again onto the susceptor of the MOCVD apparatus, and the second crystal growth is performed.

In this growth step, the Mg-doped or N-type InN re-evaporation layer 60 is evaporated in a N ₂ atmosphere at a substrate temperature of about 550 ° C. or more, and clean Mg-doped Al _0.1 Ga _0.9 N
The surface 17 of the clad layer 6 is exposed 17 (see FIG. 4D). Next, the substrate temperature is raised to about 1050 ° C.
g-doped or N-type In _0.95 Ga _0.05 N re-evaporation layer 60, N
Type or high resistance Al _0.05 Ga _0.95 N evaporation preventing layer 71 and N
A Mg-doped GaN contact layer 8 is grown on the Mg-doped Al _0.1 Ga _0.9 N cladding layer 6 to a thickness of about 0.5 μm to 1 μm so as to cover the mold or high-resistance Al _0.1 Ga _0.9 N current blocking layer 7 (FIG. 4E). reference).

Next, the wafer is taken out of the MOCVD apparatus and heat-treated at 800 ° C. in an N ₂ atmosphere.
Change the g-doped layer to P-type. Next, a P-type electrode 9 is formed on the P-type GaN contact layer 8. Further, an N-type electrode 11 is formed on the bottom surface of the N-type SiC substrate 1 (see FIG. 3F).

Next, a bonding electrode (Au) 10 having a thickness of 500 nm to 800 nm is formed at a desired position of the P-type electrode 9.
(See FIG. 3G). Through the above manufacturing process, the internal current blocking type gallium nitride-based compound semiconductor light emitting device of the fifth embodiment is manufactured.

According to the gallium nitride-based compound semiconductor light emitting device of Embodiment 5 described above, since the reevaporation layer is provided, the same effects as those of Embodiments 1 to 4 can be obtained. In addition, the gallium nitride-based compound semiconductor light emitting device of the fifth embodiment has an AlGaN
Since the evaporation preventing layer is laminated, there is an advantage that the layer thickness and the composition ratio of the reevaporation layer can be accurately controlled. Accordingly, there is an advantage that a highly reliable gallium nitride-based compound semiconductor light emitting device having a regrowth interface of higher quality, having excellent electrical characteristics and external luminous efficiency, and having high reliability can be easily manufactured.

Embodiment 6 FIG. 9 shows a gallium nitride based compound semiconductor light emitting device according to Embodiment 6 of the present invention. The gallium nitride-based compound semiconductor light-emitting device of the sixth embodiment is the same as the gallium nitride-based compound semiconductor light-emitting device of the fifth embodiment, except that a P-type SiC substrate is used as the substrate. The manufacturing process will be described below with reference to FIGS.

First, in order to perform the first crystal growth, the P-type SiC substrate 1p is introduced onto a susceptor of a MOCVD apparatus, and the substrate temperature is increased to about 1200 ° C. to perform a surface treatment. Next, the substrate temperature of the P-type SiC substrate 1p is set to 500 ° C.
The temperature was lowered to about 650 ° C., and Mg was placed on the P-type SiC substrate 1p.
The doped AlGaN buffer layer 22 has a thickness of 10 nm to 100 n.
grow about m.

[0124] Then, the temperature was raised to about a substrate temperature of 1050 ° C., the Mg-doped GaN layer 33 on the Mg-doped AlGaN buffer layer 22 is grown approximately 0.5Myuemu～4myuemu, subsequently, Mg-doped Al _0.1 Ga thereon _{A 0.9} N cladding layer 44 is grown to a thickness of about 0.1 μm to 0.3 μm.

Next, the substrate temperature is set to about 800 ° C. to 850 ° C.
To Mg-doped Al_0.1Ga_0.9N cladding layer 44
Non-doped In on_0.15Ga_0.85N active layer 5 is 3 nm
Grow to 80 nm. Next, set the substrate temperature to about 1050 ° C.
Up to non-doped In_0.15Ga_0.85On N active layer 5
N-type Al_0.1Ga_0.90.1 μm or more
Grown to about 0.3 μm, followed by N-type or M
g-doped In_0.95Ga _0.05N re-evaporation layer 61
Grow 100 nm.

Next, the substrate temperature is lowered to about 400 ° C. to 550 ° C., and an N-type or high-resistance Al _0.05 Ga _0.95 N evaporation preventing layer 72 is formed on the N-type or Mg-doped In _0.95 Ga _0.05 N re-evaporation layer 61. Grow 10 nm to 100 nm. next,
The substrate temperature is raised to about 1050 ° C, and N-type or high resistance A
l _0.05 Ga _0.95 N On the evaporation preventing layer 72, a 0.5 μm Mg-doped or high-resistance Al _0.05 Ga _0.95 N internal current blocking layer 77 is formed.
m (see FIG. 3A).

Next, the wafer is once taken out of the growth chamber, and a resist mask 100 (or an insulating film made of SiO _x or SiN _x ) is formed on the Mg-doped or high-resistance Al _0.05 Ga _0.95 N current blocking layer 77. It followed, using conventional photolithographic techniques, a portion of the resist mask 100 on the Mg-doped or high-resistance Al _0.05 Ga _0.95 N current blocking layer 77, for example, is formed in a circular shape (FIG. (b) reference).

Next, this wafer is subjected to wet-etching or dry-etching to be doped with Mg or N-type In.
Etching 16 is performed until the surface of the _0.95 Ga _0.05 N re-evaporation layer 61 is exposed, and then the resist mask 100 is removed with a hydrofluoric acid-based etchant or an organic solvent (see FIG. 3C).

Next, the wafer is introduced again onto the susceptor of the MOCVD apparatus, and the second crystal growth is performed.

In this growth step, first, a substrate temperature of about 60
0 ℃ above, in an N ₂ atmosphere, Mg-doped or N-type In
_{The 0.95} Ga _0.05 N re-evaporation layer 60 is evaporated to expose the surface 17 of the clean Mg-doped Al _0.1 Ga _0.9 N clad layer 66 (see FIG. 4D).

Next, the substrate temperature is raised to about 1050 ° C., and the Mg-doped or N-type In _0.95 Ga _0.05 N re-evaporation layer 6 is formed.
1. N-type or high-resistance Al _0.05 Ga _0.95 N evaporation preventing layer 72
An N-type GaN contact layer 88 is formed on the N-type Al _0.1 Ga _0.9 N cladding layer 66 so as to cover the Mg-doped or high-resistance Al _0.05 Ga _0.95 N internal current blocking layer 77 by 0.5 μm or more.
It is grown by about 1 μm (see FIG. 3E).

Next, the wafer is taken out of the MOCVD apparatus and heat-treated at 800 ° C. in an N ₂ atmosphere.
Change the g-doped layer to P-type. Subsequently, an N-type electrode 11 is formed on the N-type GaN contact layer 88, and
The P-type electrode 9 is formed on the bottom surface of the type SiC substrate 1p (see FIG. 3F).

Next, a bonding electrode (Au) 10 having a thickness of 500 nm to 800 n is formed at a desired position on the N-type electrode 11.
m (see FIG. 3G). Through the above manufacturing process, the internal current blocking type gallium nitride based compound semiconductor light emitting device of Embodiment 6 is manufactured.

In the gallium nitride-based compound semiconductor light emitting device of the sixth embodiment, the reevaporation layer and the AlG
Since the aN evaporation prevention layer is provided, the same effect as that of the gallium nitride-based compound semiconductor light emitting device of the fifth embodiment can be obtained.

(Embodiment 7) FIGS. 10 and 11 show a gallium nitride based compound semiconductor light emitting device according to Embodiment 7 of the present invention. The gallium nitride-based compound semiconductor light emitting device of the seventh embodiment differs from the fifth and sixth embodiments in that a part of the N-type GaN layer 3 is exposed by etching, and the N-type electrode 11 is formed on the exposed surface. Primarily different.

FIG. 10 shows a cross-sectional structure of a gallium nitride-based compound semiconductor light-emitting device according to the seventh embodiment. This gallium nitride-based compound semiconductor light-emitting device is manufactured through the manufacturing process shown in FIGS. 11 (a) to 11 (g). You. The gallium nitride compound semiconductor light emitting device uses a sapphire substrate 1 'as a substrate. The details will be described below.

First, in order to perform the first crystal growth, the sapphire substrate 1 ′ is introduced onto a susceptor of the MOCVD apparatus, and the temperature is raised to about 1200 ° C. to perform a surface treatment. Next, the substrate temperature of the sapphire substrate 1 ′ is set to 400 ° C.
The temperature was lowered to about 650 ° C, and Al was placed on the sapphire substrate 1 '.
_0.05 Ga _0.95 N buffer layer 2 ′ is 20 nm to 100 nm
Let it grow.

Next, the substrate temperature was raised to about 1050 ° C., and N-type GaN was deposited on the Al _0.05 Ga _0.95 N buffer layer 2 ′.
A layer 3 is grown to a thickness of about 0.5 μm to 4 μm, and an N-type Al _0.1 Ga _0.9 N cladding layer 4 is formed thereon to a thickness of about _0.1 μm
Grow about 0.3 μm.

Next, the substrate temperature is lowered to about 800 ° C. to 850 ° C., and a non-doped In _0.15 Ga _0.85 N active layer 5 is formed on the N-type Al _0.1 Ga _0.9 N cladding layer 4 by 3 nm to 80 nm.
Let it grow. Next, the substrate temperature is raised to about 1050 ° C., and a Mg-doped Al _0.1 Ga _0.9 N cladding layer 6 is formed on the non-doped In _0.15 Ga _0.85 N active layer 5 in a thickness of _0.1 μm to _0.1 μm.
Then, a Mg-doped or N-type InN reevaporation layer 60 is grown thereon to a thickness of 10 nm to 100 nm.

Next, the substrate temperature is lowered to about 400 to 550 ° C., and an N-type or high-resistance Al _0.05 Ga _0.95 N evaporation preventing layer 71 is grown on the Mg-doped or N-type InN re-evaporation layer 60 to a thickness of 10 to 100 nm. Let it. Next, a substrate temperature of 10
Raise the temperature to about 50 ° C and use N-type or high-resistance Al _0.05 Ga
_0.95 N-type or high-resistance Al _0.1 Ga
_{A 0.9} N current blocking layer 7 is grown by 0.5 μm (see FIG. 3A).

Next, the wafer is once taken out of the growth chamber, and a resist mask 100 (or SiO _x or S _x) is formed on the N-type or high-resistance Al _0.05 Ga _0.95 N internal current blocking layer 7.
an insulating film made of iN _x ), and subsequently, using an ordinary photolithography technique, an N-type or high-resistance Al _0.05
Resist mask 10 on Ga _0.95 N internal current blocking layer 7
A part of 0 is formed into, for example, a circular shape (see FIG. 3B).

Next, this wafer was subjected to wet-etching or dry-etching to obtain Mg-doped Al _0.1 Ga.
Etching until _0.9 N clad layer 6 surface is exposed 16
Then, the resist mask 100 is removed with a hydrofluoric acid-based etchant or an organic solvent (see FIG. 3C).

Next, the wafer is again introduced onto the susceptor of the MOCVD apparatus, and the second crystal growth is performed.

In this growth step, first, a substrate temperature of about 55
0 ℃ above, in an N ₂ atmosphere, Mg-doped or N-type InN
The re-evaporation layer 60 is evaporated to obtain a clean Mg-doped Al _0.1 G
The surface of the a _0.9 N cladding layer 6 is exposed 17 (see FIG. 4D).

Next, the substrate temperature is raised to about 1050 ° C., and the Mg-doped or N-type InN re-evaporation layer 60, the N-type or high-resistance Al _0.05 Ga _0.95 N anti-evaporation layer 71 and the N-type or high-resistance Al _0.1 Mg so as to cover the Ga _0.9 N current blocking layer 7.
Mg-doped G on the doped Al _0.1 Ga _0.9 N clad layer 6
The aN contact layer 8 is grown to about 0.5 μm to 1 μm (see FIG. 3E).

Next, the wafer is taken out of the MOCVD apparatus and heat-treated at 800 ° C. in an N ₂ atmosphere.
Change the g-doped layer to P-type. Next, in order to perform N-type electrode attachment, etching 20 is performed until the surface of the N-type GaN layer 3 is exposed (see FIG. 6F).

Next, the P-type GaN contact layer 8 is
The mold electrode 9 is formed. Further, an N-type electrode 11 is formed on the exposed surface of the N-type GaN layer 3. Subsequently, a bonding electrode (Au) 10 having a thickness of 50 is formed at a desired position of the P-type electrode 9.
A film having a thickness of 0 nm to 800 nm is formed (see FIG. 3G). Through the above manufacturing process, the internal current blocking type gallium nitride-based compound semiconductor light emitting device of the seventh embodiment is manufactured.

In the gallium nitride-based compound semiconductor light emitting device of the seventh embodiment, the reevaporation layer and the AlG
Since the aN evaporation prevention layer is provided, the same effect as that of the gallium nitride-based compound semiconductor light emitting device of the fifth embodiment can be obtained.

Embodiment 8 FIG. 12 shows a gallium nitride based compound semiconductor light emitting device according to Embodiment 8 of the present invention. The gallium nitride-based compound semiconductor light-emitting device of the eighth embodiment is a gallium nitride-based compound semiconductor light-emitting device having the same structure as that of the seventh embodiment, but differs from the seventh embodiment in the following points.
Hereinafter, the manufacturing process will be described in detail with reference to FIGS.

First, in order to perform the first crystal growth, the sapphire substrate 1 ′ is introduced onto a susceptor of a MOCVD apparatus, and the substrate temperature is raised to about 1200 ° C. to perform a surface treatment. Next, the substrate temperature of the sapphire substrate 1 ′ is set to 400 ° C.
The temperature was lowered to about 650 ° C, and Al was placed on the sapphire substrate 1 '.
_0.05 Ga _0.95 N buffer layer 2 ′ is 20 nm to 100 nm
Let it grow.

Next, the substrate temperature was raised to about 1050 ° C., and an Mg-doped GaN layer 33 was grown on the Al _0.05 Ga _0.95 N buffer layer 2 ′ to a thickness of about 0.5 μm to 4 μm. Al _0.1 Ga _0.9 N clad layer 4
4 is grown about 0.1 μm to 0.3 μm.

Next, the substrate temperature is set to about 800 ° C. to 850 ° C.
To Mg-doped Al_0.1Ga_0.9N cladding layer 44
Non-doped In on_0.15Ga_0.85N active layer 5 is 3 nm
Grow to 80 nm. Next, set the substrate temperature to about 1050 ° C.
Up to non-doped In_0.15Ga_0.85On N active layer 5
N-type Al_0.1Ga_0.90.1 μm or more
Grow about 0.3μm, and then dope Mg
Or N-type In_0.95Ga _0.05N re-evaporation layer 61
Grow 100 nm.

Next, the substrate temperature was lowered to about 400 ° C. to 550 ° C., and Mg-doped or high-resistance Al _0.05 Ga _0.95 was deposited on the Mg-doped or N-type In _0.95 Ga _0.05 N re-evaporation layer 61.
The N evaporation preventing layer 72 is grown to a thickness of 10 nm to 100 nm.
Next, the substrate temperature is raised to about 1050 ° C., and Mg-doped or high-resistance Al _0.05 Ga _0.95 N
Doped or high resistance Al _0.05 Ga _0.95 N internal current blocking layer 7
7 is grown by 0.5 μm (see FIG. 3A).

Next, the wafer is once taken out of the growth chamber, and a resist mask 100 (or an insulating film made of SiO _x or SiN _x ) is formed on the Mg-doped or high-resistance Al _0.05 Ga _0.95 N current blocking layer 77. Subsequently, a part of the resist mask 100 on the Mg-doped or high-resistance Al _0.05 Ga _0.95 N current blocking layer 77 is formed into, for example, a circular shape by using a normal photolithography technique (FIG. 2B).
reference).

Next, the wafer is subjected to etching 16 by wet etching or dry etching until the surface of the N-type Al _0.1 Ga _0.9 N cladding layer 66 is exposed, and then the resist is etched with a hydrofluoric acid-based etching solution or an organic solvent. The mask 100 is removed (see FIG. 3C).

Next, the wafer is again introduced onto the susceptor of the MOCVD apparatus, and the second crystal growth is performed.

[0157] In this growth process, the substrate temperature of about 600 ° C. or higher, in an N ₂ atmosphere, Mg-doped or N-type an In _0.95 Ga
Evaporate the _0.05N re-evaporation layer 61 to obtain clean Mg-doped Al
_The surface of the _0.1 Ga _0.9 N cladding layer 66 is exposed 17 (see FIG. 4D).

Next, the substrate temperature is raised to about 1050 ° C., and the Mg-doped or N-type In _0.95 Ga _0.05 N re-evaporation layer 6 is formed.
1. N-type on the N-type Al _0.1 Ga _0.9 N cladding layer 66 so as to cover the Mg-doped or high-resistance Al _0.05 Ga _0.95 N evaporation preventing layer 72 and the Mg-doped or high-resistance Al _0.05 Ga _0.95 N internal current blocking layer 77. GaN contact layer 88
It is grown to about 1 μm to 1 μm (see FIG. 3E).

Next, the wafer is taken out of the MOCVD apparatus and heat-treated at 800 ° C. in an N ₂ atmosphere.
Change the g-doped layer to P-type. Next, in order to attach a P-type electrode, etching 20 is performed until the surface of the P-type GaN layer 33 is exposed (see FIG. 6F).

Next, an N-type electrode 11 is formed on the N-type GaN contact layer 88. The P-type electrode 9 is formed on the exposed surface of the P-type GaN layer 33. Subsequently, a bonding electrode (Au) 10 is formed at a desired position on the N-type electrode 11 in a thickness of 500 nm to 800 nm (see FIG. 3G). Through the above manufacturing process, the internal current blocking type gallium nitride-based compound semiconductor light emitting device of the eighth embodiment is manufactured.

In the gallium nitride-based compound semiconductor light emitting device of the eighth embodiment, the reevaporation layer and the AlG
Since the aN evaporation prevention layer is provided, the same effect as that of the gallium nitride-based compound semiconductor light emitting device of the fifth embodiment can be obtained.

(Embodiment 9) FIGS. 13 and 14 show a gallium nitride-based compound semiconductor light emitting device according to Embodiment 9 of the present invention. The gallium nitride-based compound semiconductor light emitting device of the ninth embodiment has a surface protective layer formed so as to cover the reevaporation layer and the internal current blocking layer. It is significantly different from compound semiconductor light emitting devices. It should be noted that embodiments 10 to 1 to be described later
The gallium nitride-based compound semiconductor light-emitting element 2 also has a surface protective layer so as to cover the reevaporation layer and the internal current blocking layer, similarly to the gallium nitride-based compound semiconductor light-emitting element of the ninth embodiment.

FIG. 13 shows an element structure of a gallium nitride-based compound semiconductor light emitting element of the ninth embodiment. This gallium nitride-based compound semiconductor light emitting device is manufactured through the manufacturing process shown in FIGS. Hereinafter, the structure of the gallium nitride-based compound semiconductor light emitting device of Embodiment 9 will be described together with the manufacturing process. The gallium nitride-based compound semiconductor light emitting device of the ninth embodiment uses an N-type SiC substrate as a substrate.

First, in order to perform the first crystal growth, the N-type SiC substrate 1 is introduced on the susceptor of the MOCVD apparatus.
The substrate temperature is raised to about 1200 ° C., and the substrate is exposed to an N ₂ or H ₂ atmosphere. Next, the substrate temperature of the N-type SiC substrate 1 is set to 50.
The temperature is lowered to about 0 ° C. to 650 ° C., and an N-type AlGaN buffer layer 2 is grown on the N-type SiC substrate 1 to about 10 nm to 100 nm.

Next, the substrate temperature is raised to about 1050 ° C., and an N-type GaN layer 3 is grown on the N-type AlGaN buffer layer 2 by about 0.5 μm to 4 μm.
Type Al _0.1 Ga _0.9 N clad layer 4 is _0.1 μm-0.3
Growing about μm.

Next, the substrate temperature is lowered to about 800 ° C. to 850 ° C., and a non-doped In _0.15 Ga _0.85 N active layer 5 is formed on the N-type Al _0.1 Ga _0.9 N cladding layer 4 by 3 nm to 80 nm.
Let it grow. Next, the substrate temperature was raised to about 1050 ° C., and a Mg-doped Al _0.1 Ga _0.9 N cladding layer 6 was formed on the non-doped In _0.15 Ga _0.85 N active layer 5 to a thickness of _0.1 μm to _0.1 μm.
Grow about 3 μm.

Next, at a substrate temperature of about 400 ° C., the Mg-doped or N-type
m. Next, the substrate temperature is raised to about 1050 ° C. to form an N-type or high-resistance Al _0.1 Ga _0.9 N internal current blocking layer 7.
Is grown to a thickness of 0.5 nm (see FIG. 3A).

Here, the re-evaporation layer 60 is an under cladding layer,
That is, the Mg-doped Al _0.1 Ga _0.9 N cladding layer 6
The InN re-evaporation layer 60, which is composed of an impurity layer and can be re-evaporated at a lower temperature, is used.

Next, the wafer is once taken out of the growth chamber, and the N-type or high-resistance Al _0.1 Ga _0.9 N internal current blocking layer 7 is _removed.
Mask 100 (or SiO _x or S
iN _x insulating film), and then using an ordinary photolithography technique, an N-type or high-resistance Al _0.1
Resist mask 10 on Ga _0.9 N internal current blocking layer 7
A part of 0 is formed, for example, in a circular shape (see FIG. 2B).

Next, this wafer is subjected to wet etching or dry etching to perform Mg-doped or N-type In.
Etching 16 is performed until the surface of the _0.95 Ga _0.05 N re-evaporation layer 60 is exposed, and then the resist mask 100 is removed with a hydrofluoric acid-based etchant or an organic solvent (see FIG. 3C).

Next, the wafer is again introduced onto the susceptor of the MOCVD apparatus, and the second crystal growth is performed.

In this growth step, first, a substrate temperature of about 40
0 ℃ above, in an N ₂ atmosphere, Mg-doped or N-type InN
The re-evaporation layer 60 is evaporated to obtain a clean Mg-doped Al _0.1 G
The surface of the a _0.9 N cladding layer 6 is exposed (see FIG. 4D).

Next, the substrate temperature is lowered to about 400 ° C. to 650 ° C., and the Mg-doped or N-type InN reevaporation layer 60 and the N-type or high-resistance Al _0.1 Ga _0.9 N internal current blocking layer 7 are covered with Mg. On the doped Al _0.1 Ga _0.9 N cladding layer 6, an Mg-doped Al _0.05 Ga _0.95 N surface protective layer 80 is formed.
It grows from nm to 100 nm. Next, the substrate temperature is set to 105
The temperature is raised to about 0 ° C., and an Mg-doped GaN contact layer 9 is grown on the Mg-doped Al _0.05 Ga _0.95 N surface protective layer 80 to a thickness of about 0.5 μm to 1 μm (see FIG. 9E).

The Mg-doped Al _0.05 Ga _0.95 N surface protective layer 80 and the Mg-doped GaN contact layer 9 can be continuously grown while the substrate temperature is raised from 400 ° C. to 650 ° C. to about 1050 ° C. This is the same in Embodiments 10 to 12 to be described later.

Next, the wafer is taken out of the MOCVD apparatus and heat-treated at 800 ° C. in an N ₂ atmosphere.
Change the g-doped layer to P-type. Subsequently, a P-type electrode 10 is formed on the P-type GaN contact layer 9. Also,
An N-type electrode 12 is formed on the bottom surface of the N-type SiC substrate 1 (see FIG. 1F).

Next, a bonding electrode (Au) 11 is formed at a desired position on the P-type electrode 10 to a thickness of 500 nm to 800 nm.
m (see FIG. 3G). Through the above manufacturing process, an internal current blocking type gallium nitride based compound semiconductor light emitting device of Embodiment 9 is manufactured.

According to the gallium nitride based compound semiconductor light emitting device of Embodiment 9, since the reevaporation layer 60 is provided,
The same effects as in the first to fourth embodiments can be obtained. In addition, in the gallium nitride-based compound semiconductor light emitting device of the ninth embodiment, the surface protection layer 80 is formed so as to cover the reevaporation layer 60 and the internal current blocking layer 7, so that a more favorable regrowth is achieved. A gallium nitride-based compound semiconductor light emitting device having an interface can be reliably obtained.

That is, the internal current blocking layer 7 is directly placed on the surface of the clad layer 6 having a clean surface, for example, at 1050 ° C.
, The impurities, Ga,
Although N escapes, the surface protective layer 8 formed at a low temperature is formed.
By covering with 0, these omissions are prevented, and
This is because an even better regrowth interface can be reliably obtained.

Therefore, according to the gallium nitride-based compound semiconductor light emitting device of the ninth embodiment, a better regrowth interface is obtained, so that the electrical characteristics and the external luminous efficiency are excellent and the reliability is further improved. There is an advantage that a gallium nitride-based compound semiconductor light emitting device can be manufactured.

(Embodiment 10) FIG. 15 shows a gallium nitride based compound semiconductor light emitting device according to Embodiment 10 of the present invention. The gallium nitride-based compound semiconductor light-emitting device of the tenth embodiment includes a surface protection layer similarly to the gallium nitride-based compound semiconductor light-emitting device of the ninth embodiment. However, in the tenth embodiment, a P-type SiC substrate is used as a substrate. Used. Hereinafter, the manufacturing process will be described in detail with reference to FIGS.

First, in order to perform the first crystal growth, the P-type SiC substrate 1p is introduced onto a susceptor of a MOCVD apparatus, the substrate temperature is raised to about 1200 ° C., and the substrate is exposed to an N ₂ or H ₂ atmosphere. Next, the substrate temperature of the P-type SiC substrate 1p is lowered to about 500 ° C. to 650 ° C., and the Mg-doped AlGaN buffer layer 22 is
It is grown by about m to 100 nm.

[0182] Then, the temperature was raised to about a substrate temperature of 1050 ° C., the Mg-doped GaN layer 33 on the Mg-doped AlGaN buffer layer 22 is grown approximately 0.5Myuemu～4myuemu, subsequently, Mg-doped Al _0.1 Ga thereon _{A 0.9} N cladding layer 44 is grown to a thickness of about 0.1 μm to 0.3 μm.

Next, the substrate temperature is lowered to about 800 ° C. to 850 ° C., and the Mg-doped Al _0.1 Ga _0.9 N cladding layer 44 is formed.
A non-doped In _0.15 Ga _0.85 N active layer 5 is formed on the
nm. Next, the substrate temperature is raised to about 1050 ° C., and N-doped In _0.15 Ga _0.85 N
Type Al _0.1 Ga _0.9 N cladding layer 66 having a thickness of _0.1 μm to _0.1 μm.
Grow about 3 μm.

Next, at a substrate temperature of about 400.degree.
_An N-type or Mg-doped In layer is formed on the _0.1 Ga _0.9 N cladding layer 66.
_{A 0.95} Ga _0.05 N re-evaporation layer 61 is grown from 10 nm to 100 nm, followed by Mg-doped or high-resistance Al
_{A 0.05} Ga _0.95 N internal current blocking layer 77 is grown to a thickness of 0.5 μm (see FIG. 3A).

Next, the wafer is once taken out of the growth chamber, and a resist mask 100 (or a Si mask) is formed on the Mg-doped or high-resistance Al _0.05 Ga _0.95 N internal current blocking layer 77.
O _x or insulating film made of SiN _x) to form a. continue,
Using conventional photolithography technique, a portion of the resist mask 100 on the Mg-doped or high-resistance Al _0.05 Ga _0.95 N internal current blocking layer 77, for example, is formed in a circular shape (see FIG. (B)).

Next, this wafer is subjected to wet etching or dry etching to perform Mg-doped or N-type In.
Etching 16 is performed until the surface of the _0.95 Ga _0.05 N re-evaporation layer 61 is exposed, and then the resist mask 100 is removed with a hydrofluoric acid-based etchant or an organic solvent (see FIG. 3C).

Next, the wafer is again introduced onto the susceptor of the MOCVD apparatus, and the second crystal growth is performed.

In this growth step, first, a substrate temperature of about 50
0 ° C. or higher, in N ₂ atmosphere, N-type or Mg-doped In
_{The 0.95} Ga _0.05 N re-evaporation layer 61 is evaporated to expose the surface of the clean Mg-doped Al _0.1 Ga _0.9 N clad layer 66 (see FIG. 4D).

Next, the substrate temperature is lowered to about 400 ° C. to 650 ° C., and the N-type or Mg-doped In _0.95 Ga _0.05 N re-evaporation layer 61 and the Mg-doped or high-resistance Al _0.05 Ga _0.95
Mg-doped Al _0.1 so as to cover the N internal current blocking layer 77.
N-type Al _0.05 Ga _0.95 N on the Ga _0.9 N cladding layer 66
The surface protection layer 88 is grown to a thickness of 10 nm to 100 nm. Next, the substrate temperature is raised to about 1050 ° C., and N-type Al
N-type Al _0.1 Ga _0.9 on the _0.05 Ga _0.95 N surface protective layer 88
The N cladding layer 67 and the N-type GaN contact layer 99 are grown by about 0.5 μm to 1 μm (see FIG. 3E).

Here, the N-type Al _0.05 Ga _0.95 N surface protective layer 88, the N-type Al _0.1 Ga _0.9 N cladding layer 67 and the N-type GaN contact layer 99 have a substrate temperature of 400 ° C. to 65 ° C.
It is also possible to grow continuously while raising the temperature from 0 ° C. to about 1050 ° C.

Next, the wafer is taken out of the MOCVD apparatus and heat-treated at 800 ° C. in an N ₂ atmosphere.
Change the g-doped layer to P-type. Subsequently, the N-type electrode 12 is formed on the N-type GaN contact layer 99. Further, a P-type electrode 10 is formed on the bottom surface of the P-type SiC substrate 1p (see FIG. 3F).

Next, a bonding electrode (Au) 11 having a thickness of 500 nm to 800 n was formed at a desired position on the N-type electrode 12.
m (see FIG. 3G). Through the above manufacturing process, the internal current blocking type gallium nitride based compound semiconductor light emitting device of Embodiment 10 is manufactured.

Since the gallium nitride-based compound semiconductor light emitting device of the tenth embodiment includes the reevaporation layer 61 and the surface protection layer 88 like the gallium nitride based compound semiconductor light emitting device of the ninth embodiment, The same effect as in the ninth embodiment can be obtained.

(Embodiment 11) FIGS. 16 and 17 show a gallium nitride-based compound semiconductor light emitting device according to Embodiment 11 of the present invention.
Is shown. The gallium nitride-based compound semiconductor light emitting device of the eleventh embodiment also includes a surface protection layer.
Gallium nitride-based compound semiconductor light emitting device is an N-type GaN
An N-type electrode 12 is formed on the surface of the layer 3 exposed by etching. Further, a sapphire substrate 1 'is used as the substrate. FIG. 16 shows an element structure of the gallium nitride-based compound semiconductor light emitting element. This gallium nitride-based compound semiconductor light emitting device is manufactured through the manufacturing process shown in FIGS. The structure will be described below together with the manufacturing process.

First, in order to perform the first crystal growth, the sapphire substrate 1 ′ is introduced onto a susceptor of the MOCVD apparatus, the temperature is raised to about 1200 ° C., and the substrate is exposed to an N ₂ or H ₂ atmosphere. Next, the substrate temperature of the sapphire substrate 1 ′ is lowered to about 500 ° C. to 650 ° C., and the N-type AlGaN buffer layer 2 ′ is
It is grown to about 00 nm.

Next, the substrate temperature was raised to about 1050 ° C., and the N-type GaN layer 3 was placed on the N-type AlGaN buffer layer 2 ′.
Is grown to a thickness of about 0.5 μm to 4 μm, and then an N-type Al _0.1 Ga _0.9 N clad layer 4 is formed thereon to a thickness of _0.1 μm to 0.
Grow about 3 μm.

Next, the substrate temperature is lowered to about 800 ° C. to 850 ° C., and a non-doped In _0.15 Ga _0.85 N active layer 5 is formed on the N-type Al _0.1 Ga _0.9 N cladding layer 4 by 3 nm to 80 nm.
Let it grow. Next, the substrate temperature is raised to about 1050 ° C., and a Mg-doped Al _0.1 Ga _0.9 N cladding layer 6 is formed on the non-doped In _0.15 Ga _0.85 N active layer 5 in a thickness of _0.1 μm to _0.1 μm.
Grow about 3 μm.

Next, at a substrate temperature of about 400 ° C., Mg-doped or N-doped Al _0.1 Ga _0.9 N
A type InN re-evaporation layer 60 is grown to a thickness of 10 nm to 100 nm. Next, the substrate temperature is raised to about 1050 ° C., and an N-type or high-resistance A is deposited on the Mg-doped or N-type InN reevaporation layer 60.
The l _0.1 Ga _0.9 N internal current blocking layer 7 is grown to 0.5 μm (see FIG. 3A).

In the eleventh embodiment, the re-evaporation layer 60 is formed by using the InN re-evaporation layer 60 which can be re-evaporated at a lower temperature because the underlying cladding layer 6 is made of an Mg impurity layer. I have.

Next, the wafer is once taken out of the growth chamber, and a resist mask 100 (or an insulating film made of SiO _x or SiN _x ) is placed on the N-type or high-resistance Al _0.05 Ga _0.95 N internal current blocking layer 7. Formed, followed by N-type or high-resistance Al
A part of the resist mask 100 on the _0.05 Ga _0.95 N internal current blocking layer 7 is formed, for example, in a circular shape (see FIG. 2B).

Next, this wafer is subjected to wet-etching or dry-etching to obtain Mg-doped Al _0.1 Ga.
Etching until _0.9 N clad layer 6 surface is exposed 16
Then, the resist mask 100 is removed with a hydrofluoric acid-based etchant or an organic solvent (see FIG. 3C).

Next, the wafer is again introduced onto the susceptor of the MOCVD apparatus, and the second crystal growth is performed.

In this growth step, first, a substrate temperature of about 40
0 ℃ above, in an N ₂ atmosphere, Mg-doped or N-type InN
The re-evaporation layer 60 is evaporated to obtain a clean Mg-doped Al _0.1 G
The surface of the a _0.9 N cladding layer 6 is exposed (see FIG. 4D).

Next, the substrate temperature is lowered to about 400 ° C. to 650 ° C., and the N type InN re-evaporation layer 60 and the N type or high resistance Al _0.05 Ga _0.95 N internal current blocking layer 7 are covered.
On the g-doped Al _0.1 Ga _0.9 N cladding layer 6, a Mg-doped Al _0.05 Ga _0.95 N surface protective layer 80 having a thickness of 10 nm to 100
nm. Next, the substrate temperature was raised to about 1050 ° C., and the Mg-doped Al _0.05 Ga _0.95 N surface protective layer 80 was formed.
An Mg-doped GaN contact layer 9 having a thickness of 0.5 μm to 1
It grows by about μm (see FIG. 3E).

In the eleventh embodiment, the Mg-doped Al _0.05 Ga _0.95 N surface protective layer 8 and the Mg-doped Ga
The N contact layer 9 can be continuously grown while the substrate temperature is raised from 400 ° C. to 650 ° C. to about 1050 ° C.

Next, the wafer is taken out of the MOCVD apparatus and heat-treated at 800 ° C. in an N ₂ atmosphere.
Change the g-doped layer to P-type. Next, in order to perform N-type electrode attachment, etching 20 is performed on a part of the N-type GaN layer 3 until the surface thereof is exposed (see FIG. 3F).

Next, the P-type GaN contact layer 9 is
The mold electrode 9 is formed. Further, an N-type electrode 12 is formed on the exposed surface of the N-type GaN layer 3. Subsequently, the P-type electrode 10
A bonding electrode (Au) 11 having a thickness of 5
It is formed to a thickness of from 00 nm to 800 nm (see FIG. 3G). Through the above manufacturing process, the internal current blocking type gallium nitride-based compound semiconductor light emitting device of the eleventh embodiment is manufactured.

The gallium nitride-based compound semiconductor light emitting device of the eleventh embodiment includes the re-evaporation layer 60 and the surface protection layer 80 like the gallium nitride based compound semiconductor light-emitting device of the ninth embodiment. The same effect as in the ninth embodiment can be obtained.

(Embodiment 12) FIG. 18 shows a gallium nitride based compound semiconductor light emitting device according to Embodiment 12 of the present invention. The gallium nitride-based compound semiconductor light emitting device of the twelfth embodiment has a P-type GaN layer with a surface exposed by etching.
The point that a mold electrode is formed is mainly different from the gallium nitride-based compound semiconductor light emitting device of the eleventh embodiment. In addition,
The gallium nitride-based compound semiconductor light emitting device of the twelfth embodiment also uses the sapphire substrate 1 'as a substrate. Hereinafter, the manufacturing process will be described in detail with reference to FIGS.

First, in order to perform the first crystal growth, the sapphire substrate 1 ′ is introduced onto a susceptor of a MOCVD apparatus, the temperature is raised to about 1200 ° C., and the substrate is exposed to an N ₂ or H ₂ atmosphere. Next, the substrate temperature of the sapphire substrate 1 ′ is lowered to about 400 ° C. to 650 ° C., and an Al _0.05 Ga _0.95 N buffer layer 2 ′ is formed on the sapphire substrate 1 ′ by 20 nm.
Grow to 100 nm.

[0211] Then, the temperature was raised to a substrate temperature of 1050 ° C. approximately, the Mg-doped GaN layer 33 is grown approximately 0.5Myuemu～4myuemu, subsequently, Mg-doped Al _0.1 Ga _0.9 thereon
The N cladding layer 44 is grown by about 0.1 μm to 0.3 μm. Next, the substrate temperature is lowered to about 800 ° C. to 850 ° C., and a non-doped In _0.15 Ga _0.85 N active layer 5 is formed on the Mg-doped Al _0.1 Ga _0.9 N cladding layer 44 by 3 nm to 80 n.
m.

Next, the temperature of the substrate was raised to about 1050 ° C., and N-type A was deposited on the non-doped In _0.15 Ga _0.85 N active layer 5.
l _0.1 Ga _0.9 N cladding layer 66 is _0.1 μm to 0.3 μm
grow about m. Next, at a substrate temperature of about 400 ° C.,
N-type or Mg on the N-type Al _0.1 Ga _0.9 N cladding layer 66
The doped In _0.95 Ga _0.05 N re-evaporation layer 61 has a thickness of 10 nm to 1
Growing to 00 nm. Next, the substrate temperature was raised to about 1050 ° C., and Mg-doped or high-resistance Al _0.05 Ga _0.95 N was deposited on the N-type or Mg-doped In _0.95 Ga _0.05 N re-evaporation layer 61.
The internal current blocking layer 77 is grown by 0.5 μm (see FIG. 3A).

Next, the wafer is once taken out of the growth chamber, and the resist mask 100 (or SiO _x) is formed on the Mg-doped or high-resistance Al _0.05 Ga _0.95 N current blocking layer 77.
Or an insulating film made of SiN _x ), and then, using a normal photolithography technique, a part of the resist mask 100 on the Mg-doped or high-resistance Al _0.05 Ga _0.95 N current blocking layer 77 is _removed , for example. The shape is circular (see FIG. 3B).

Next, this wafer is subjected to etching 16 by wet etching or dry etching until the surface of the N-type Al _0.1 Ga _0.9 N cladding layer 66 is exposed, and then the resist is etched with a hydrofluoric acid-based etching solution or an organic solvent. The mask 100 is removed (see FIG. 3C).

Next, the wafer is again introduced onto the susceptor of the MOCVD apparatus, and the second crystal growth is performed.

In this growth step, first, a substrate temperature of about 50
0 ° C. or higher, in N ₂ atmosphere, N-type or Mg-doped In
_0.95 Ga 0.05N re-evaporation layer 61 is evaporated to obtain clean M
The surface of the g-doped Al _0.1 Ga _0.9 N cladding layer 66 is exposed (see FIG. 4D).

Next, the temperature of the substrate is lowered to about 400 ° C. to 650 ° C., and N-type or Mg-doped In _0.95 Ga 0.05
N re-evaporation layer 61 and Mg-doped or high-resistance Al _0.05 Ga
_0.95 Mg-doped Al _0.1
N-type Al _0.05 Ga _0.95 N on the Ga _0.9 N cladding layer 66
The surface protection layer 88 is grown to a thickness of 10 nm to 100 nm. Next, the substrate temperature is raised to about 1050 ° C., and N-type Al
N-type Al _0.1 Ga _0.9 on the _0.05 Ga _0.95 N surface protective layer 88
The N cladding layer 67 and the N-type GaN contact layer 99 are grown to about 0.5 μm to 1 μm (see FIG. 6E).

In the twelfth embodiment, the N-type A
l _0.05 Ga _0.95 N surface protective layer 88, N-type Al _0.1 Ga _0.9
The N cladding layer 67 and the N-type GaN contact layer 99
It is also possible to grow continuously while raising the substrate temperature from 400 ° C. to 650 ° C. to about 1050 ° C.

Next, the wafer was taken out of the MOCVD apparatus and heat-treated at 800 ° C. in an N ₂ atmosphere.
Change the g-doped layer to P-type. Next, in order to attach a P-type electrode, etching 20 is performed until a part of the surface of the P-type GaN layer 33 is exposed (see FIG. 6F).

Next, on the N-type GaN contact layer 99, N
The mold electrode 12 is formed. The P-type electrode 10 is formed on the exposed surface of the P-type GaN layer 33. Subsequently, a bonding electrode (Au) 11 is formed at a desired position on the N-type electrode 12 with a thickness of 500 nm to 800 nm (see FIG. 3G). Through the above manufacturing process, the internal current blocking type gallium nitride-based compound semiconductor light emitting device of the twelfth embodiment is manufactured.

The gallium nitride-based compound semiconductor light emitting device of the twelfth embodiment also includes the reevaporation layer 61 and the surface protection layer 88, similarly to the gallium nitride based compound semiconductor light-emitting device of the ninth embodiment. The same effect as in the ninth embodiment can be obtained.

[0222]

According to the gallium nitride based compound semiconductor light emitting device of the present invention described above, since the reevaporation layer is provided, a clean clad layer surface can be exposed. For this reason, the exposed surface is not oxidized and contaminants are not attached, so that a good regrowth layer with few crystal defects can be obtained. As a result, a highly reliable gallium nitride-based compound semiconductor light-emitting device having a high-quality regrowth interface, having excellent electrical characteristics and external luminous efficiency, and having high reliability can be realized.

Further, according to the present invention, in which the evaporation preventing layer is provided particularly on the reevaporation layer, the layer thickness and the composition ratio of the reevaporation layer can be controlled accurately. Accordingly, there is an advantage that a highly reliable gallium nitride-based compound semiconductor light emitting device having a regrowth interface of higher quality, having excellent electrical characteristics and external luminous efficiency, and having high reliability can be easily manufactured.

According to the present invention having a structure in which a surface protective layer is provided, for example, when lamination is performed at 1050 ° C., impurities, Ga, and N escape from the surface of the cladding layer. Covering with a layer prevents these dropouts. Therefore, according to this configuration, a better regrowth interface can be reliably obtained.

Further, according to the present invention having a structure in which the bonding electrode is disposed just above the center of the current blocking layer,
Since light from the active layer is not blocked, there is an advantage that external light emission efficiency can be improved.

[Brief description of the drawings]

FIG. 1 is a sectional view of a gallium nitride-based compound semiconductor light emitting device according to a first embodiment of the present invention.

FIG. 2 is a manufacturing process diagram showing Embodiment 1 of the gallium nitride-based compound semiconductor light emitting device of the present invention.

FIG. 3 is a manufacturing process diagram showing Embodiment 2 of the gallium nitride-based compound semiconductor light emitting device of the present invention.

FIG. 4 is a sectional view of a gallium nitride-based compound semiconductor light emitting device according to a third embodiment of the present invention.

FIG. 5 is a manufacturing process diagram showing Embodiment 3 of the gallium nitride-based compound semiconductor light emitting device of the present invention.

FIG. 6 is a manufacturing process diagram showing Embodiment 4 of the gallium nitride-based compound semiconductor light emitting device of the present invention.

FIG. 7 is a sectional view of a gallium nitride-based compound semiconductor light emitting device according to a fifth embodiment of the present invention.

FIG. 8 is a manufacturing process diagram showing Embodiment 5 of the gallium nitride-based compound semiconductor light emitting device of the present invention.

FIG. 9 is a manufacturing process diagram showing Embodiment 6 of the gallium nitride-based compound semiconductor light emitting device of the present invention.

FIG. 10 is a sectional view of a gallium nitride-based compound semiconductor light emitting device according to a seventh embodiment of the present invention.

FIG. 11 is a manufacturing process diagram showing a gallium nitride-based compound semiconductor light emitting device according to a seventh embodiment of the present invention.

FIG. 12 is a manufacturing process diagram showing Embodiment 8 of the gallium nitride-based compound semiconductor light emitting device of the present invention.

FIG. 13 is a sectional view of a gallium nitride-based compound semiconductor light emitting device according to a ninth embodiment of the present invention.

FIG. 14 is a manufacturing process diagram showing Embodiment 9 of the gallium nitride-based compound semiconductor light emitting device of the present invention.

FIG. 15 is a manufacturing process diagram showing Embodiment 10 of the gallium nitride-based compound semiconductor light emitting device of the present invention.

FIG. 16 is a sectional view of a gallium nitride-based compound semiconductor light emitting device according to a eleventh embodiment of the present invention.

FIG. 17 is a manufacturing process diagram showing Embodiment 11 of the gallium nitride-based compound semiconductor light emitting device of the present invention.

FIG. 18 is a manufacturing process diagram showing Embodiment 12 of the gallium nitride-based compound semiconductor light emitting device of the present invention.

FIG. 19 is an element cross-sectional view showing a conventional example of a compound semiconductor light-emitting element.

[Explanation of symbols]

 Reference Signs List 1 N-type SiC substrate 1 'Sapphire substrate 1P P-type SiC substrate 2 N-type AlGaN buffer layer 2' AlGaN buffer layer 22 P-type AlGaN buffer layer 3 N-type GaN layer 33 P-type GaN layer 4 N-type AlGaN cladding layer 44 P-type AlGaN cladding layer 5 Non-doped InGaN active layer 6 P-type AlGaN cladding layer 60 N-type or P-type InGaN re-evaporation layer 61 P-type or N-type InGaN re-evaporation layer 66 N-type AlGaN cladding layer 7 N-type or high-resistance AlGaN internal current blocking Layer 71 AlGaN evaporation preventing layer 77 P-type or high-resistance AlGaN internal current blocking layer 8 P-type GaN contact layer 80 AlGaN surface protection layer 88 N-type GaN contact layer 9 P-type p-type electrode 10 Bonding electrode 11 N-type electrode

Claims (29)

[Claims] 1. A gallium nitride-based compound semiconductor light emitting device comprising a substrate and a laminated structure provided on the substrate, the laminated structure comprising: an active layer; and a pair of clad layers sandwiching the active layer. A re-evaporation layer formed partially on the clad layer of the pair of clad layers remote from the substrate; and an internal current blocking layer formed on the re-evaporation layer. A gallium nitride-based compound semiconductor light emitting device in which an evaporation layer has a function of cleaning the surface of a clad layer farther from the substrate among the pair of clad layers. 2. The method according to claim 1, wherein the re-evaporation layer is formed of In _z Ga _{1 -zN} (0 <z
≦ 1), the active layer is made of In _y Ga _1-y N (0 ≦ y ≦ 1: x
= 0, y ≠ 0), and the cladding layer is made of Al _x Ga ₁ -xN.
(0 ≦ x <1) and the internal current blocking layer is Al _w Ga _1-w
2. The gallium nitride-based compound semiconductor light emitting device according to claim 1, wherein N (0 ≦ w ≦ 1). 3. The gallium nitride based compound semiconductor light emitting device according to claim 1, wherein an evaporation prevention layer is provided between said reevaporation layer and said internal current blocking layer. 4. The re-evaporation layer is made of In _z Ga _{1 -zN} (0 <z
≦ 1), the active layer is made of In _y Ga _1-y N (0 ≦ y ≦ 1: x
= 0, y ≠ 0), and the cladding layer is made of Al _x Ga ₁ -xN.
(0 ≦ x <1), and the evaporation preventing layer is made of Al _{w ′} Ga _{1-w ′} N
(0 ≦ w ′ ≦ 1) and the current blocking layer is Al _w Ga _1-w N
4. The gallium nitride-based compound semiconductor light emitting device according to claim 3, wherein (0 ≦ w ≦ 1). 5. The gallium nitride-based compound semiconductor light emitting device according to claim 1, wherein a surface protective layer is provided on said internal current blocking layer. 6. The gallium nitride-based compound semiconductor according to claim 5, wherein said surface protective layer is provided on said clad layer remote from said substrate so as to cover said reevaporation layer and said internal current blocking layer. Light emitting element. 7. The reevaporation layer is made of In _z Ga _{1 -zN} (0 <z
≦ 1), the active layer is made of In _y Ga _1-y N (0 ≦ y ≦ 1: x
= 0, y ≠ 0), and the cladding layer is made of Al _x Ga ₁ -xN.
(0 ≦ x <1), and the internal current blocking layer is made of Al _w Ga _1-w N
(0 ≦ w ≦ 1) and the surface protective layer is made of Al _{x ′} Ga _{1-x ′} N
7. The gallium nitride-based compound semiconductor light emitting device according to claim 5, wherein (0 ≦ x ′ <1). 8. The substrate according to claim 1, wherein the substrate is a first conductivity type substrate, and the laminated structure includes a first conductivity type buffer layer formed on the substrate, and a first conductivity type buffer layer formed on the first conductivity type buffer layer. A cladding layer of one conductivity type; an active layer formed on the cladding layer of the first conductivity type; a cladding layer of the second conductivity type formed on the active layer; and a cladding layer of the second conductivity type. A second conductivity type or first conductivity type reevaporation layer formed; a first conductivity type or high resistance internal current blocking layer formed on the reevaporation layer; 2. The gallium nitride-based compound semiconductor light emitting device according to claim 1, wherein the gallium nitride-based compound semiconductor light emitting device comprises a second conductive type contact layer formed. 9. The substrate according to claim 1, wherein the substrate is a non-conductive substrate, and the laminated structure includes a first buffer layer formed on the substrate, and a first conductive layer formed on the first buffer layer. A second buffer layer, a first conductivity type clad layer formed on the second buffer layer, an active layer formed on the first conductivity type clad layer, and a second conductive layer formed on the active layer. A first conductivity type or second conductivity type re-evaporation layer formed on the second conductivity type cladding layer; a first conductivity type or high resistance formed on the re-evaporation layer 2. The gallium nitride-based compound semiconductor light-emitting device according to claim 1, wherein the gallium nitride-based compound semiconductor light-emitting device comprises: an internal current blocking layer; 10. The gallium nitride-based compound semiconductor light emitting device according to claim 8, wherein a first conductivity type or high-resistance evaporation preventing layer is provided between the reevaporation layer and the internal current blocking layer. element. 11. The gallium nitride-based compound semiconductor light emitting device according to claim 8, wherein a second conductivity type surface protection layer is provided on the internal current blocking layer. 12. The evaporation substrate temperature of the reevaporation layer is 550.
The gallium nitride-based compound semiconductor light emitting device according to claim 3, wherein the temperature is at least 550 ° C., preferably 550 ° C. to 800 ° C. 11. 13. The evaporation substrate temperature of the reevaporation layer is 400.
The gallium nitride-based compound semiconductor light emitting device according to claim 5, wherein the temperature is in a range of 400 ° C. to 800 ° C., preferably 400 ° C. to 650 ° C. 14. The growth temperature of the evaporation preventing layer is 400 ° C.
Above, preferably 400 ° C ~ 550 ° C,
The gallium nitride-based compound semiconductor light-emitting device according to claim 4. 15. The method according to claim 15, wherein the evaporation preventing layer and the current blocking layer
The gallium nitride-based compound semiconductor light emitting device according to claim 3, wherein the gallium nitride-based compound semiconductor light emitting device is grown while being heated to a temperature from 00 ° C. to 1200 ° C. 11. 16. The growth temperature of the surface protective layer is 400 ° C.
The gallium nitride-based compound semiconductor light emitting device according to claim 5, wherein the temperature is −650 ° C. 17. An N-type or P-type electrode on the laminated structure, and a bonding electrode on the N-type or P-type electrode, the bonding electrode being located directly above the center of the internal current blocking layer. The gallium nitride-based compound semiconductor light emitting device according to claim 1, wherein the light emitting device is located. 18. A step of forming an N-type GaN buffer layer and an N-type Al _x Ga ₁ -xN (0 ≦ x <1) first cladding layer on an N-type substrate; _y Ga _1-y N (0 ≦ y ≦ 1: x
= 0 if y 活性 0) forming an active layer; forming a P-type Al _x Ga ₁ -xN (0 ≦ x <1) second cladding layer on the active layer; On the cladding layer, a P-type or N-type In _z Ga _{1 -zN} (0
<Z ≦ 1) a step of forming a reevaporation layer, and an N-type or high-resistance Al _w Ga _1-w N (0 ≦
w ≦ 1) a step of forming an internal current blocking layer, a step of re-evaporating the reevaporation layer to expose a surface of the second cladding layer, and a step of subsequently forming a P-type GaN contact layer. Of manufacturing a gallium nitride based compound semiconductor light emitting device. 19. A step of forming a P-type GaN buffer layer and a P-type Al _x Ga ₁ -xN (0 ≦ x <1) first cladding layer on a P-type substrate; _y Ga _1-y N (0 ≦ y ≦ 1: x
Y = 0 if y = 0) forming an active layer; forming an N-type Al _x Ga ₁ -xN (0 ≦ x <1) second cladding layer on the active layer; On the cladding layer, N-type or P-type In _z Ga _{1 -z} N (0
<Z ≦ 1) a step of forming a re-evaporation layer, and a P-type or high-resistance Al _w Ga _1-w N (0 ≦
w ≦ 1) a step of forming an internal current blocking layer, a step of re-evaporating the reevaporation layer to expose a surface of the second cladding layer, and a step of subsequently forming a P-type GaN contact layer. Of manufacturing a gallium nitride based compound semiconductor light emitting device. 20. Al _d Ga ₁ -dN (0%) on a non-conductive substrate.
≦ d ≦ 1) forming a first buffer layer, an N-type GaN second buffer layer, and an N-type Al _x Ga ₁ -xN (0 ≦ x <1) first cladding layer; To In _y Ga _1-y N (0 ≦ y ≦ 1: x
= 0 if y 活性 0) forming an active layer; forming a P-type Al _x Ga ₁ -xN (0 ≦ x <1) second cladding layer on the active layer; On the cladding layer, a P-type or N-type In _z Ga _{1 -zN} (0
<Z ≦ 1) a step of forming a reevaporation layer; and an N-type or high-low Al _w Ga _1-w N (0 ≦
w ≦ 1) a step of forming an internal current blocking layer, a step of re-evaporating the reevaporation layer to expose a surface of the second cladding layer, and a step of subsequently forming a P-type GaN contact layer. A method for manufacturing a gallium nitride based compound semiconductor light emitting device. 21. Al _d Ga ₁ -dN (0 to 0) on a non-conductive type substrate.
≦ d ≦ 1) forming a first buffer layer, a P-type GaN second buffer layer, and a P-type Al _x Ga ₁ -xN (0 ≦ x <1) first cladding layer; To In _y Ga _1-y N (0 ≦ y ≦ 1: x
Y = 0 if y = 0) forming an active layer; forming an N-type Al _x Ga ₁ -xN (0 ≦ x <1) second cladding layer on the active layer; On the cladding layer, N-type or P-type In _z Ga _{1 -z} N (0
<Z ≦ 1) a step of forming a reevaporation layer, and an N-type or high-resistance Al _w Ga _1-w N (0 ≦
w ≦ 1) a step of forming an internal current blocking layer, a step of re-evaporating the reevaporation layer to expose a surface of the second cladding layer, and a step of subsequently forming a P-type GaN contact layer. Of manufacturing a gallium nitride based compound semiconductor light emitting device. 22. A step of forming an N-type GaN buffer layer and an N-type Al _x Ga ₁ -xN (0 ≦ x <1) first cladding layer on an N-type substrate; _y Ga _1-y N (0 ≦ y ≦ 1: x
= 0 if y 活性 0) forming an active layer; forming a P-type Al _x Ga ₁ -xN (0 ≦ x <1) second cladding layer on the active layer; On the cladding layer, a P-type or N-type In _z Ga _{1 -zN} (0
<Z ≦ 1) forming a re-evaporation layer; and forming an N-type or high-resistance Al _{w ′} Ga _{1-w ′} N (0
<W ′ <1) a step of forming an evaporation-preventing layer, and an N-type or high-resistance Al _w Ga _1-w N (0
≦ w ≦ 1) a step of forming an internal current blocking layer, a step of re-evaporating the reevaporation layer to expose the surface of the second cladding layer, and thereafter, a P-type Al _{x ′} Ga _{1-x ′} N ( 0 ≦ x ′ <1) a step of forming a contact layer. 23. A step of forming a P-type GaN buffer layer and a P-type Al _x Ga ₁ -xN (0 ≦ x <1) first cladding layer on a P-type substrate; _y Ga _1-y N (0 ≦ y ≦ 1: x
Y = 0 if y = 0) forming an active layer; forming an N-type Al _x Ga ₁ -xN (0 ≦ x <1) second cladding layer on the active layer; On the cladding layer, N-type or P-type In _z Ga _{1 -z} N (0
<Z ≦ 1) a step of forming a reevaporation layer, and a P-type or high-resistance Al _{w ′} Ga _{1-w ′} N (0
<W ′ <1) a step of forming an evaporation-preventing layer, and a P-type or high-resistance Al _w Ga _1-w N (0
A ≦ w ≦ 1) forming an internal current blocking layer and re-evaporated to該再evaporation layer, a step of exposing the surface of the second clad layer, then, P-type _{Al x 'Ga 1-x'} N (0 ≦ x ′ <1) a step of forming a contact layer. 24. An Al _d Ga _{1 -d} N (0,0) substrate on a non-conductive type substrate.
≦ d ≦ 1) forming a first buffer layer, an N-type GaN second buffer layer, and an N-type Al _x Ga ₁ -xN (0 ≦ x <1) first cladding layer; To In _y Ga _1-y N (0 ≦ y ≦ 1: x
= 0 if y 活性 0) forming an active layer; forming a P-type Al _x Ga ₁ -xN (0 ≦ x <1) second cladding layer on the active layer; On the cladding layer, a P-type or N-type In _z Ga _{1 -zN} (0
<Z ≦ 1) forming a re-evaporation layer; and forming an N-type or high-resistance Al _{w ′} Ga _{1-w ′} N (0
<W ′ <1) a step of forming an evaporation-preventing layer, and an N-type or high-resistance Al _w Ga _1-w N (0
A ≦ w ≦ 1) forming an internal current blocking layer and re-evaporated to該再evaporation layer, a step of exposing the surface of the second clad layer, then, P-type _{Al x 'Ga 1-x'} N (0 ≦ x ′ <1) a step of forming a contact layer. 25. An Al _d Ga ₁ -dN (0,0) substrate on a non-conductive substrate.
≦ d ≦ 1) forming a first buffer layer, a P-type GaN second buffer layer, and a P-type Al _x Ga ₁ -xN (0 ≦ x <1) first cladding layer; To In _y Ga _1-y N (0 ≦ y ≦ 1: x
Y = 0 if y = 0) forming an active layer; forming an N-type Al _x Ga ₁ -xN (0 ≦ x <1) second cladding layer on the active layer; On the cladding layer, N-type or P-type In _z Ga _{1 -z} N (0
<Z ≦ 1) forming a re-evaporation layer; and forming an N-type or high-resistance Al _{w ′} Ga _{1-w ′} N (0
<W ′ <1) a step of forming an evaporation-preventing layer, and an N-type or high-low Al _w Ga _1-w N (0
≦ w ≦ 1) a step of forming an internal current blocking layer, a step of re-evaporating the reevaporation layer to expose a surface of the second cladding layer, and thereafter, N-type Al _{x ′} Ga _{1-x ′} N (0 ≦ x ′ <1) a step of forming a contact layer. 26. A step of forming an N-type GaN buffer layer and an N-type Al _x Ga ₁ -xN (0 ≦ x <1) first cladding layer on an N-type substrate; _y Ga _1-y N (0 ≦ y ≦ 1: x
= 0 if y 活性 0) forming an active layer; forming a P-type Al _x Ga ₁ -xN (0 ≦ x <1) second cladding layer on the active layer; On the cladding layer, a P-type or N-type In _z Ga _{1 -zN} (0
<Z ≦ 1) a step of forming a reevaporation layer, and an N-type or high-resistance Al _w Ga _1-w N (0 ≦
w ≦ 1) a step of forming an internal current blocking layer, a step of forming the internal current blocking layer in a convex shape, a step of re-evaporating the reevaporation layer to expose a surface of the second clad layer, A gallium nitride-based compound semiconductor light emitting device including a step of forming a P-type Al _{x ′} Ga _{1-x ′} N (0 ≦ x ′ <1) surface protective layer, and a step of subsequently forming a P-type GaN contact layer Manufacturing method. 27. A step of forming a P-type GaN buffer layer and a P-type Al _x Ga ₁ -xN (0 ≦ x <1) first cladding layer on a P-type substrate; _y Ga _1-y N (0 ≦ y ≦ 1: x
Y = 0 if y = 0) forming an active layer; forming an N-type Al _x Ga ₁ -xN (0 ≦ x <1) second cladding layer on the active layer; On the cladding layer, N-type or P-type In _z Ga _{1 -z} N (0
<Z ≦ 1) a step of forming a re-evaporation layer, and a P-type or high-resistance Al _w Ga _1-w N (0 ≦
w ≦ 1) a step of forming an internal current blocking layer, a step of forming the internal current blocking layer in a convex shape, a step of re-evaporating the reevaporation layer to expose a surface of the second cladding layer, A gallium nitride-based compound semiconductor light emitting device including a step of forming a type Al _{x ′} Ga _{1-x ′} N (0 ≦ x ′ <1) surface protective layer, and a step of subsequently forming an N-type GaN contact layer. Production method. 28. An Al _d Ga ₁ -dN (0,0) substrate on a non-conductive substrate.
≦ d ≦ 1) forming a first buffer layer, an N-type GaN second buffer layer, and an N-type Al _x Ga ₁ -xN (0 ≦ x <1) first cladding layer; To In _y Ga _1-y N (0 ≦ y ≦ 1: x
= 0 if y 活性 0) forming an active layer; forming a P-type Al _x Ga ₁ -xN (0 ≦ x <1) second cladding layer on the active layer; On the cladding layer, a P-type or N-type In _z Ga _{1 -zN} (0
<Z ≦ 1) a step of forming a reevaporation layer, and an N-type or high-resistance Al _w Ga _1-w N (0 ≦
w ≦ 1) a step of forming an internal current blocking layer, a step of forming the internal current blocking layer in a convex shape, a step of re-evaporating the reevaporation layer to expose a surface of the second clad layer, A gallium nitride-based compound semiconductor light emitting device including a step of forming a P-type Al _{x ′} Ga _{1-x ′} N (0 ≦ x ′ <1) surface protective layer, and a step of subsequently forming a P-type GaN contact layer Manufacturing method. 29. An Al _d Ga ₁ -dN (0 0
≦ d ≦ 1) forming a first buffer layer, a P-type GaN second buffer layer and a P-type Al _x Ga ₁ -xN (0 ≦ x <1) first cladding layer; To In _y Ga _1-y N (0 ≦ y ≦ 1: x
Y = 0 if y = 0) forming an active layer; forming an N-type Al _x Ga ₁ -xN (0 ≦ x <1) second cladding layer on the active layer; On the cladding layer, N-type or P-type In _z Ga _{1 -z} N (0
<Z ≦ 1) a step of forming a reevaporation layer, and an N-type or high-resistance Al _w Ga _1-w N (0 ≦
w ≦ 1) a step of forming an internal current blocking layer, a step of forming the internal current blocking layer in a convex shape, a step of re-evaporating the reevaporation layer to expose a surface of the second clad layer, A gallium nitride-based compound semiconductor light emitting device including a step of forming an N-type Al _{x ′} Ga _{1-x ′} N (0 ≦ x ′ <1) surface protective layer and a step of subsequently forming an N-type GaN contact layer Manufacturing method.