JPH10303264A - Method and device for evaluating film quality of semiconductor component - Google Patents
Method and device for evaluating film quality of semiconductor componentInfo
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- JPH10303264A JPH10303264A JP12494597A JP12494597A JPH10303264A JP H10303264 A JPH10303264 A JP H10303264A JP 12494597 A JP12494597 A JP 12494597A JP 12494597 A JP12494597 A JP 12494597A JP H10303264 A JPH10303264 A JP H10303264A
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- electron
- semiconductor device
- film quality
- stage
- current
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- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は半導体素子における
膜質特性を、特に非接触で測定し得る評価装置に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an evaluation apparatus capable of non-contactly measuring film quality characteristics of a semiconductor device.
【０００２】[0002]
【従来の技術】従来、半導体素子の膜質特性、例えばゲ
−ト酸化膜の測定方法において、ゲ−ト酸化膜上に作成
したゲ−ト電極上に直接、測定用針を突き立ててＩ−Ｖ
測定を行い、その測定結果から酸化膜の膜質評価をして
いる。2. Description of the Related Art Conventionally, in a method for measuring film quality characteristics of a semiconductor device, for example, a gate oxide film, a measuring needle is directly protruded on a gate electrode formed on the gate oxide film to obtain an I-electrode. V
The measurement is performed, and the quality of the oxide film is evaluated from the measurement results.
【０００３】図６は、従来の測定方法の例を示してい
る。図６において、ステ−ジ２０上にウェハ２１を置
き、測定用針２２を測定対象位置に突き立てる。測定に
際してステ−ジ２０側は、例えば電位０Ｖまたは接地さ
れている。この場合、図７に示すように、ウェハ２１の
ゲ−ト酸化膜２３上に作成されたゲ−ト電極２４に対し
て直接、測定用針２２が突き立てられる。図８は、この
ようにして測定された従来方法によるＩ−Ｖ測定結果を
示している。FIG. 6 shows an example of a conventional measuring method. In FIG. 6, a wafer 21 is placed on a stage 20, and a measuring needle 22 is pushed up to a position to be measured. At the time of measurement, the stage 20 side is, for example, at a potential of 0 V or grounded. In this case, as shown in FIG. 7, the measuring needle 22 is directly protruded against the gate electrode 24 formed on the gate oxide film 23 of the wafer 21. FIG. 8 shows the results of IV measurement according to the conventional method measured in this way.
【０００４】[0004]
【発明が解決しようとする課題】ところで、従来の測定
方法において測定用針２２は、図示されていない支持手
段によって支持されている。測定対象位置（ゲ−ト電極
２４）に対する測定用針２２の接触圧力は、ゲ−ト電極
２４の下に位置するゲ−ト酸化膜２３へ伝わり、酸化膜
を積極的に薄くしてしまう。このため図８から明らかな
ように測定用針２２の接触圧力の大小によって、電流測
定値に影響を与える。このように機械的な接触による従
来の測定方法もしくは装置では、適正で正確な測定を行
うのが困難であった。By the way, in the conventional measuring method, the measuring needle 22 is supported by supporting means (not shown). The contact pressure of the measurement needle 22 with respect to the measurement target position (gate electrode 24) is transmitted to the gate oxide film 23 located below the gate electrode 24, and the oxide film is positively thinned. Therefore, as is apparent from FIG. 8, the magnitude of the contact pressure of the measuring needle 22 affects the measured current value. As described above, it is difficult to perform proper and accurate measurement with the conventional measurement method or apparatus using mechanical contact.
【０００５】そこで、本発明は、適正かつ正確な測定を
安定的に行い得る半導体素子の膜質評価方法および装置
を提供することを目的とする。Accordingly, an object of the present invention is to provide a method and an apparatus for evaluating the film quality of a semiconductor device, which can stably perform proper and accurate measurements.
【０００６】[0006]
【課題を解決するための手段】本発明による半導体素子
の膜質評価方法は、半導体素子の膜質を非接触で評価す
る方法であって、測定対象領域に電子を供給し、単位時
間あたりの電子供給量を測定して電子電流を求め、さら
に測定対象領域からのリーク電流を前記電子電流から電
圧に変換し、半導体素子からの電流および電圧を測定す
る。また、本発明の半導体素子の膜質評価方法におい
て、半導体素子をステージ上に載置し、このステージ側
で前記リーク電流を測定することを特徴とする。A method for evaluating the film quality of a semiconductor device according to the present invention is a method for evaluating the film quality of a semiconductor device in a non-contact manner, comprising supplying electrons to a measurement target area and supplying electrons per unit time. The amount is measured to obtain an electron current, and the leak current from the measurement target area is converted from the electron current to a voltage, and the current and voltage from the semiconductor element are measured. In the method for evaluating a film quality of a semiconductor device according to the present invention, the semiconductor device is mounted on a stage, and the leakage current is measured on the stage side.
【０００７】また、本発明の半導体素子の膜質評価装置
は、半導体素子の膜質を非接触で評価する装置であっ
て、ステージ上に載置した半導体素子に対して電子を照
射する電子印加装置と、前記ステージに接続された測定
用電流計および電圧計と、を備え、前記電子印加装置か
ら半導体素子の測定対象領域に電子を供給すると共に、
前記ステージ側で電流または電圧を測定する。A film quality evaluation device for a semiconductor device according to the present invention is a device for evaluating the film quality of a semiconductor device in a non-contact manner, comprising an electron application device for irradiating a semiconductor device mounted on a stage with electrons. , Comprising a measuring ammeter and a voltmeter connected to the stage, and supplying electrons from the electron applying device to a measurement target region of a semiconductor element,
Current or voltage is measured on the stage side.
【０００８】また、本発明の半導体素子の膜質評価装置
において、前記電子印加装置は、電子発生手段、電界お
よび焦点レンズ手段、電子計測手段、測定位置確認手段
および真空排気手段を含んでいることを特徴とする。ま
た、本発明の半導体素子の膜質評価装置において、評価
すべき半導体素子は前記ステ−ジ上に吸着されて、常圧
の環境で測定されることを特徴とする。また、本発明の
半導体素子の膜質評価装置において、電子計測手段とし
て光電子増倍管を備え、この光電子増倍管により、照射
する電子量の単位時間あたりの量を測定することを特徴
とする。また、本発明の半導体素子の膜質評価装置にお
いて、評価すべき半導体素子は、半導体基板上にある酸
化膜の上に導電型の電極を有することを特徴とすること
を特徴とする。Further, in the apparatus for evaluating the film quality of a semiconductor device according to the present invention, the electron applying device includes an electron generating means, an electric field and focusing lens means, an electronic measuring means, a measuring position confirming means and a vacuum exhaust means. Features. Further, in the film quality evaluation apparatus for a semiconductor device according to the present invention, the semiconductor device to be evaluated is adsorbed on the stage and measured in a normal pressure environment. Further, the apparatus for evaluating the film quality of a semiconductor device according to the present invention is characterized in that a photomultiplier tube is provided as an electron measuring means, and the amount of irradiated electrons per unit time is measured by the photomultiplier tube. In the film quality evaluation apparatus for a semiconductor device according to the present invention, the semiconductor device to be evaluated is characterized by having a conductive electrode on an oxide film on a semiconductor substrate.
【０００９】本発明によれば、半導体素子に対して非接
触による電子印加方法を用いて酸化膜の膜質評価方法を
実現する。すなわち、前述の課題を解決するために、測
定対象領域であるゲ−ト電極に電子を供給することによ
り、そのゲ−ト酸化膜の膜質評価をするというものであ
る。According to the present invention, a method for evaluating the quality of an oxide film is realized by using a method for applying electrons in a non-contact manner to a semiconductor element. That is, in order to solve the above-mentioned problem, by supplying electrons to a gate electrode which is a measurement target region, the film quality of the gate oxide film is evaluated.
【００１０】本発明において、電子をゲ−ト電極に供給
する電子銃を持つ。この電子銃内で光電子増倍管を用
い、単位時間あたりの電子供給量を電流ならびに電圧に
置き換える。かつウェハ裏面からステ−ジを経由して電
流ならびに電圧を測定することで常圧での評価を可能に
した。In the present invention, an electron gun for supplying electrons to the gate electrode is provided. A photomultiplier tube is used in this electron gun, and the amount of electrons supplied per unit time is replaced with current and voltage. In addition, by measuring the current and the voltage from the back surface of the wafer via the stage, evaluation at normal pressure is made possible.
【００１１】[0011]
【発明の実施の形態】以下、図面に基づき、本発明によ
る半導体素子の評価装置の好適な実施の形態を説明す
る。図１は、本発明の実施形態における装置全体の構成
例を示している。図１において、測定対象となるウェハ
４を装着するステ−ジ１には電流計２と電圧計３が接続
されている。測定対象であるウェハ４はステ−ジ１上に
載置され、真空引きによって吸着固定されている。ウェ
ハ４と電子印加銃７の間隔は、数μｍ程度に設定され
る。DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of a semiconductor device evaluation apparatus according to the present invention will be described below with reference to the drawings. FIG. 1 shows a configuration example of an entire apparatus according to an embodiment of the present invention. In FIG. 1, an ammeter 2 and a voltmeter 3 are connected to a stage 1 on which a wafer 4 to be measured is mounted. The wafer 4 to be measured is placed on the stage 1 and is suction-fixed by evacuation. The distance between the wafer 4 and the electron application gun 7 is set to about several μm.
【００１２】電子印加銃７には、外部から後述の電子発
生管（Ｅ−ＧＵＮ）をコントロ−ルするための電源５と
単位時間あたりの電子量の測定結果を出力するための配
線６とが接続されている。また、電子印加銃７を例えば
１×１０-6Ｐａ以上の真空を維持するために真空排気用
の配管８を備える。なお、この配管８は、図示しない真
空バキューム源に接続されている。The electron application gun 7 has a power supply 5 for externally controlling an electron generating tube (E-GUN), which will be described later, and a wiring 6 for outputting a measurement result of the amount of electrons per unit time. It is connected. Further, in order to maintain the electron application gun 7 at a vacuum of, for example, 1 × 10 −6 Pa or more, a pipe 8 for evacuation is provided. The pipe 8 is connected to a vacuum vacuum source (not shown).
【００１３】電子印加銃７から照射された電子９は、ウ
ェハ４に照射され、ウェハ４のゲ−ト電極（図７参照）
に蓄積されていく。蓄積された電子は、ゲ−ト酸化膜の
膜質により徐々に該ゲ−ト酸化膜を通じてウェハ４内に
流れ込み、ステ−ジ１を通じて外部電流計２および電圧
計３によって測定される。The electrons 9 radiated from the electron gun 7 irradiate the wafer 4 and the gate electrode of the wafer 4 (see FIG. 7).
Will be accumulated. The accumulated electrons gradually flow into the wafer 4 through the gate oxide film due to the film quality of the gate oxide film, and are measured by the external ammeter 2 and the voltmeter 3 through the stage 1.
【００１４】ここで図２は、電子印加銃７の構成例を示
している。電子印加銃７はその内部に、電子発生管１
０、電界レンズ１１、焦点レンズ１２、光電子増倍管
（電子計測手段）１３およびＣＣＤカメラ（測定位置確
認手段）１４を含んでいる。電子発生管１０にて例えば
１２０ｋｅＶの電源で発生した電子９は、電界レンズ１
１内を通過することで、エネルギー的に等価な電子のみ
が通過する。この電子９はつぎに、焦点レンズ１２を経
由して電子印加銃７から照射される。FIG. 2 shows an example of the configuration of the electron application gun 7. The electron applying gun 7 has an electron generating tube 1 therein.
0, an electric field lens 11, a focus lens 12, a photomultiplier tube (electronic measurement means) 13, and a CCD camera (measurement position confirmation means) 14. Electrons 9 generated by a power supply of, for example, 120 keV in the electron generating tube 10
By passing through 1, only energetically equivalent electrons pass. Next, the electrons 9 are emitted from the electron application gun 7 via the focusing lens 12.
【００１５】このとき照射される電子量は、測定前に光
電子増倍管１３を用いて単位時間あたりの電子数をカウ
ントすることで、単位時間あたりの電流値として用られ
る。また、電子印加銃７には、ＣＣＤカメラ１４が設置
されており、測定位置を特定することができるようにな
っている。従って、半導体素子における測定対象領域を
正確に把握することができる。The amount of electrons irradiated at this time is used as a current value per unit time by counting the number of electrons per unit time using a photomultiplier tube 13 before measurement. Further, a CCD camera 14 is provided on the electron application gun 7 so that a measurement position can be specified. Therefore, the measurement target region in the semiconductor element can be accurately grasped.
【００１６】例えば図３は、光電子増倍管１３で得られ
た電子印加時間に対する電子量の変化の例を示してい
る。ある一定時間、例えば１０秒間程度測定した場合に
は、５〜１０秒間における電子量変化の傾きから単位時
間あたりの電子数を用いるものとする。また、電子電流
は単位時間あたりの電子量として求めることができるの
で、図３で説明した電子量の測定結果から電流へ変換す
ることができる（図４参照）。For example, FIG. 3 shows an example of a change in the amount of electrons with respect to the electron application time obtained by the photomultiplier 13. When the measurement is performed for a certain period of time, for example, about 10 seconds, the number of electrons per unit time is used from the slope of the change in the amount of electrons in 5 to 10 seconds. Further, since the electron current can be obtained as the amount of electrons per unit time, the measurement result of the amount of electrons described with reference to FIG. 3 can be converted into a current (see FIG. 4).
【００１７】さらに図５は、電子印加銃７が電子を印加
する電子印加時間とステ−ジ１から電流計２によって得
られた電流との関係を示している。ゲ−ト酸化膜のリ−
ク電流は、初期の電子供給量では大きな変動が見られな
い。ゲ−ト酸化膜に一定量の電子が蓄積されると電位差
が次第に大きくなり、電流が流れ始める。電子印加銃７
による印加電子量を越えたところで電流計２の電流値が
一定量となる。この測定デ−タから一定の電流、例えば
１ｎＡ程度流れたときの時間を印加電子の電流値から電
圧値に変換することで、ゲ−ト酸化膜のＩ−Ｖ特性を評
価することができる。FIG. 5 shows the relationship between the electron application time during which the electron application gun 7 applies electrons and the current obtained from the stage 1 by the ammeter 2. Gate oxide film lead
In the initial current, a large fluctuation is not observed in the initial electron supply amount. When a certain amount of electrons are accumulated in the gate oxide film, the potential difference gradually increases, and a current starts to flow. Electron application gun 7
The current value of the ammeter 2 becomes a fixed amount when the applied electron amount exceeds. The IV characteristic of the gate oxide film can be evaluated by converting the time when a constant current, for example, about 1 nA, flows from the measurement data from the current value of the applied electrons to a voltage value.
【００１８】なお、上記実施形態においては、特に半導
体素子のゲート酸化膜の測定、評価の例で説明したが、
本発明はゲート酸化膜に限らずその他の膜質に対しても
有効に適用可能であり、上述した実施形態の場合と同様
な作用効果を得ることができる。In the above embodiment, the example of measurement and evaluation of a gate oxide film of a semiconductor device has been described.
The present invention can be effectively applied not only to the gate oxide film but also to other film qualities, and the same operational effects as those of the above-described embodiment can be obtained.
【００１９】[0019]
【発明の効果】以上説明したように本発明によれば、非
接触によるゲ−ト酸化膜の評価方法として電子量を用い
ることにより、測定値変動がなく正確な測定を行うこと
ができる。このように正確な測定を安定して行えること
で、この種の半導体素子を適正に評価することができる
等の利点を有している。As described above, according to the present invention, accurate measurement can be performed without fluctuation of measured values by using the amount of electrons as a method for evaluating a gate oxide film in a non-contact manner. Since such accurate measurement can be stably performed, there is an advantage that such a semiconductor element can be appropriately evaluated.
【図１】本発明による半導体素子の膜質評価装置の実施
形態における全体構成例を示す図である。FIG. 1 is a diagram showing an example of the overall configuration of a semiconductor element film quality evaluation apparatus according to an embodiment of the present invention.
【図２】本発明による半導体素子の膜質評価装置に係る
電子印加銃の構成例を示す図である。FIG. 2 is a diagram showing a configuration example of an electron application gun according to the semiconductor element film quality evaluation apparatus according to the present invention.
【図３】本発明における電子量と時間の関係の１例を示
す図である。FIG. 3 is a diagram showing an example of the relationship between the amount of electrons and time in the present invention.
【図４】本発明における電子数と電子電流の関係の１例
を示す図である。FIG. 4 is a diagram showing an example of the relationship between the number of electrons and the electron current in the present invention.
【図５】本発明における電子電流と電流測定値の関係の
１例を示す図である。FIG. 5 is a diagram illustrating an example of a relationship between an electron current and a measured current value in the present invention.
【図６】従来の膜質評価方法の１例を説明するための図
である。FIG. 6 is a diagram for explaining an example of a conventional film quality evaluation method.
【図７】従来の膜質評価方法の１例におけるゲ−ト酸化
膜の構造を説明するための図である。FIG. 7 is a view for explaining the structure of a gate oxide film in one example of a conventional film quality evaluation method.
【図８】従来方法による針圧の変化とＩ−Ｖ特性の関係
を示す図である。FIG. 8 is a diagram showing a relationship between a change in stylus pressure and an IV characteristic according to a conventional method.
１ ウェハステ−ジ ２ 電流計 ３ 電圧計 ４ ウェハ ５ コントロ−ル系電源 ６ 電子カウンティング出力用の配線 ７ 電子印加銃 ８ 真空排気用配管 ９ 照射電子 １０ 電子発生管 １１ 電界レンズ １２ 焦点レンズ １３ 光電子増倍管 １４ ＣＣＤカメラ ２３ ゲ−ト酸化膜 ２４ ゲ−ト電極 DESCRIPTION OF SYMBOLS 1 Wafer stage 2 Ammeter 3 Voltmeter 4 Wafer 5 Control system power supply 6 Wiring for electronic counting output 7 Electron application gun 8 Vacuum exhaust piping 9 Irradiation electron 10 Electron generation tube 11 Electric field lens 12 Focus lens 13 Photoelectron increase Doubler 14 CCD camera 23 Gate oxide film 24 Gate electrode
Claims (7)
法であって、 測定対象領域に電子を供給し、単位時間あたりの電子供
給量を測定して電子電流を求め、さらに測定対象領域か
らのリーク電流を前記電子電流から電圧に変換し、半導
体素子からの電流および電圧を測定することを特徴とす
る半導体素子の膜質評価方法。1. A method for evaluating the film quality of a semiconductor device in a non-contact manner, comprising supplying electrons to a measurement target area, measuring an electron supply amount per unit time to obtain an electron current, and further calculating an electron current from the measurement target area. Converting the leak current from the electron current to a voltage and measuring the current and voltage from the semiconductor element.
方法において、 前記半導体素子をステージ上に載置し、このステージ側
で前記リーク電流を測定することを特徴とする半導体素
子の膜質評価方法。2. The method for evaluating film quality of a semiconductor device according to claim 1, wherein the semiconductor device is mounted on a stage, and the leakage current is measured on the stage side. Method.
置であって、 ステージ上に載置した半導体素子に対して電子を照射す
る電子印加装置と、 前記ステージに接続された測定用電流計および電圧計
と、を備え、 前記電子印加装置から半導体素子の測定対象領域に電子
を供給すると共に、前記ステージ側で電流または電圧を
測定することを特徴とする半導体素子の膜質評価装置。3. An apparatus for non-contactly evaluating the film quality of a semiconductor device, comprising: an electron application device for irradiating a semiconductor device mounted on a stage with electrons; and a measuring ammeter connected to the stage. And a voltmeter, wherein an electron is supplied from the electron applying device to a measurement target region of the semiconductor element, and a current or a voltage is measured on the stage side.
界および焦点レンズ手段、電子計測手段、測定位置確認
手段および真空排気手段を含んでいることを特徴とする
請求項３に記載の半導体素子の膜質評価装置。4. The semiconductor device according to claim 3, wherein said electron applying device includes an electron generating unit, an electric field and focusing lens unit, an electronic measuring unit, a measuring position confirming unit, and a vacuum exhausting unit. Film quality evaluation device.
装置において、 評価すべき半導体素子は前記ステ−ジ上に吸着されて、
常圧の環境で測定されることを特徴とする半導体素子の
膜質評価装置。5. The apparatus for evaluating film quality of a semiconductor device according to claim 3, wherein the semiconductor device to be evaluated is adsorbed on the stage,
An apparatus for evaluating film quality of a semiconductor device, wherein the film quality is measured in a normal pressure environment.
え、この光電子増倍管により、照射する電子量の単位時
間あたりの量を測定することを特徴とする請求項４に記
載の半導体素子の膜質評価装置。6. The semiconductor device according to claim 4, wherein a photomultiplier tube is provided as the electron measuring means, and the amount of irradiated electrons per unit time is measured by the photomultiplier tube. Film quality evaluation device.
にある酸化膜の上に導電型の電極を有することを特徴と
することを特徴とする請求項３に記載の半導体素子の膜
質評価装置。7. The apparatus for evaluating film quality of a semiconductor device according to claim 3, wherein the semiconductor device to be evaluated has a conductive electrode on an oxide film on a semiconductor substrate. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12494597A JPH10303264A (en) | 1997-04-28 | 1997-04-28 | Method and device for evaluating film quality of semiconductor component |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12494597A JPH10303264A (en) | 1997-04-28 | 1997-04-28 | Method and device for evaluating film quality of semiconductor component |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH10303264A true JPH10303264A (en) | 1998-11-13 |
Family
ID=14898094
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12494597A Pending JPH10303264A (en) | 1997-04-28 | 1997-04-28 | Method and device for evaluating film quality of semiconductor component |
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| Country | Link |
|---|---|
| JP (1) | JPH10303264A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015032652A (en) * | 2013-08-01 | 2015-02-16 | 信越半導体株式会社 | Method and device for evaluating semiconductor substrate |
-
1997
- 1997-04-28 JP JP12494597A patent/JPH10303264A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015032652A (en) * | 2013-08-01 | 2015-02-16 | 信越半導体株式会社 | Method and device for evaluating semiconductor substrate |
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