JPH10303150A - Adhesive sheet for semiconductor and manufacture of semiconductor device using the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To make electrostatic breakdown or damages to side edges of bottom faces hardly occur by sequentially forming a first adhesive agent layer, metallic foil, and a second adhesive agent layer in order on the upper surface of a base resin sheet and giving conductivity to the base resin sheet and first and second adhesive layers. SOLUTION: After a first adhesive agent layer 23 is formed on a base resin sheet 22 composed of a polyester sheet, etc., a second adhesive agent layer 24 is formed on the layer 23 with ferromagnetic oil 24 in between. Then an adhesive sheet 21 is formed by coating the surface of the adhesive layer 25 with a cover film 26. Thereafter, the cover film 26 of the adhesive sheet 21 is stripped off and a silicon wafer 7 on which a semiconductor device is formed is stuck to the second adhesive agent layer 24. The base resin sheet 22 and first and second adhesive agent layers 23 and 25 have conductivity. Therefore, the static electricity which is generated when the silicon wafer 7 is cut, and so on, can be discharged.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor pressure-sensitive adhesive sheet having an adhesive layer for holding a semiconductor wafer for the purpose of cutting a semiconductor wafer and the like, and a method of manufacturing a semiconductor device using the pressure-sensitive adhesive sheet.

[0002]

2. Description of the Related Art In many cases, a large number of semiconductor devices are manufactured in a large semiconductor wafer, and are used as chips. FIG. 8A is a cross-sectional view illustrating a conventional method for manufacturing a semiconductor device. After the silicon wafer 7 is bonded to the semiconductor pressure-sensitive adhesive sheet 1 having the adhesive layer 3 on the base resin sheet 2, the silicon wafer 7 is mounted on a stage 9 of a dicing saw. 1
Reference numeral 9 denotes a suction groove for vacuum chucking the base resin sheet 1 on the stage 9. The height of the stage 9 is precisely adjusted so that a part of the base resin sheet 2 is cut, the blade 11 is rotated, and the stage 11 is moved in a direction perpendicular to the plane of the paper to cut. The blade 11 is formed by dispersing diamond powder on the surface of a thin metal plate.
7 is firmly fixed by a set screw 12a, and the blade rotation motor 16 rotates about 50,000 revolutions per minute (rpm). The rotary motor 16 to the blade 11 are moved by the y-axis moving guide 18 in the y-axis direction (the direction toward the back of the paper) to cut one cutting line, and then the stage is moved in a predetermined direction in the left and right direction in the figure. Move at a pitch and cut parallel cutting lines. Thereafter, the stage 9 is rotated by 90 ° around the support shaft 13 and cut into chips similarly.

[0003] During cutting, about 10 nozzles are shown from the two washing nozzles 14 shown in the drawing and the upper nozzle in the drawing (not shown).
High-pressure water 15 of about kg / cm ² is sprayed to wash away chips at the time of cutting. FIG. 8B is a cross-sectional view of the pressure-sensitive adhesive sheet 1 to which the semiconductor chip 7a is adhered after cutting the semiconductor wafer, and FIG. 8C is a partial plan view. The semiconductor chip 7a and the cutting line 20 cut to a predetermined size can be seen.

[0004] As a pickup method for picking up the semiconductor chip 7a from the adhesive sheet 1 for disposition in a case, for example, two methods are mainly used.
The first method is that, after the adhesive sheet 1 on which the cut semiconductor chip 7a of FIG. 8B is mounted is concentrically stretched in the outer peripheral direction, a vacuum tweezer having a sucker-shaped vacuum suction function is provided at the tip. It is a method of picking up with such as. FIG. 9 (a)
FIG. 9B is a cross-sectional view before expansion, and FIG. 9B is a cross-sectional view after expansion, which is a method of changing the state from FIG. 9A to FIG. 9B. At this time, the adhesive layer 3 on the bottom surface side of the cut semiconductor chip 7a is pulled to the side, the bonding area with the semiconductor chip 7a decreases with the thickness, and the bonding strength decreases,
This facilitates the pickup of the semiconductor chip 7a.

FIG. 10A is a sectional view for explaining the second method. This is a method of pushing up from the back surface of the adhesive sheet 1 by a projection plate 41 having a projection 42 like a sword mountain formed on a hot plate, and picking up with vacuum tweezers or the like. Also, heating energy or ultraviolet irradiation energy may be used to weaken the adhesive force of the adhesive layer 3,
They are seen as ancillary of the above two schemes.

[0006]

Since the adhesive layer and the base resin sheet have no conductivity, the adherend is easily damaged by static electricity. Pressurized water 1 in FIG.
Numeral 5 is high-pressure jet water of about 10 kg / cm ² using pure water having a resistivity of 10 MΩ · cm or more. When the pressurized water 15 is sprayed on the blade 11 rotating 50,000 times, high-pressure static electricity is generated. In the conventional pressure-sensitive adhesive sheet 1, since both the base resin sheet 1 and the adhesive layer 3 are made of an insulating material, there is no escape for the generated static electricity, and they are accumulated on the silicon wafer 7 and built into the silicon wafer 7. The semiconductor device was easily damaged by electrostatic discharge. This problem is particularly important in a MOS semiconductor device having a thin gate insulating film.

As a countermeasure for this, a specific concentration of carbon dioxide gas is mixed in pure water to make the specific resistance several hundred mΩ · cm.
In some cases, the blade 11 and the metal members constituting the apparatus are corroded due to acidification by carbonic acid generated, thereby shortening the service life or eluted metal ions from the semiconductor. There is a problem that the semiconductor device adheres to the device and lowers the reliability of the semiconductor device.

It has been mentioned above that two methods are mainly used for picking up a semiconductor chip which has been completely cut into chips. In the first method, the pressure-sensitive adhesive sheet 1 on which the semiconductor chip 7a is placed as shown in FIG. 9 (a) is spread by a uniform force in the outward direction of a concentric circle to obtain the state shown in FIG. 9 (b). It was a method of picking up with tweezers or the like.

At this time, the side edge of the bottom surface of the cut semiconductor chip 7a is subjected to a pulling force, so that minute cracks 37, chips 38 and the like are likely to be damaged, and the risk of impairing the reliability of the device is increased. In the second method, as shown in FIG.
It was a method of pushing up and picking up with vacuum tweezers or the like.

FIG. 10B is a cross-sectional view after being pushed up by the method. As can be seen from this figure, the position of the projection 42 is not necessarily equal to pushing the cut bottom surface of the semiconductor chip 7a by a uniform force or pushing up the bottom surface of the semiconductor chip 7a. In addition, damages such as minute cracks 37 and chips 38 are likely to occur. Generally, in the case of silicon, the damage from a cutting device such as a dicing saw is about 5 μm from the surface. However, if the silicon is picked up by an uneven force, the damage of several μm triggers, and the bottom surface is damaged. Often, the object to be bonded is damaged on the side edge.

Further, vacuum tweezers are often used for the pickup, but there is also a problem of surface contamination in which air is sucked in along the surface of the semiconductor chip at the time of vacuum suction, and foreign substances which are involved are attached. Furthermore, with vacuum tweezers, the cut semiconductor chip cannot be sucked and held evenly, so that unequal force acts on the chip bottom surface, which causes damage to the adherend on the side edge of the bottom surface or the adjacent semiconductor chip. Damage can occur when they collide with each other.

As described above, in the conventional method, there are problems that 1) the semiconductor device is easily broken by static electricity, and 2) the side edge of the cut bottom surface is easily damaged at the time of pickup. In view of these problems, an object of the present invention is to provide a pressure-sensitive adhesive sheet for a semiconductor which is less likely to cause electrostatic breakdown and damage to a bottom edge and a method for manufacturing a semiconductor device using the same.

[0013]

In order to solve the above problems, the present invention provides a four-layer structure in which a first adhesive layer, a metal foil, and a second adhesive layer are sequentially laminated on the upper surface of a base resin sheet. In the pressure-sensitive adhesive sheet for a semiconductor for holding a semiconductor wafer, both the base resin sheet and the first and second adhesive layers have conductivity.

With such an adhesive sheet for a semiconductor,
Static electricity generated when the semiconductor wafer is cut or the like is discharged through the conductive base resin sheet and the first and second adhesive layers, and the static electricity does not accumulate. Especially,
The metal foil is made of a ferromagnetic material. If the metal foil is a ferromagnetic material, the semiconductor wafer that is attracted by the electromagnet built into the electromagnetic disk and adhered to the metal foil and the second adhesive layer is held firmly. On the other hand, when the electromagnet is turned off, the adhesive sheet on which the semiconductor wafer is placed is released from the electromagnetic disk.

It is also assumed that at least one of the adhesive layers is a temperature-sensitive adhesive layer that becomes less tacky as the temperature increases. When a temperature-sensitive adhesive layer is used, the adhesiveness is weakened by heating to a temperature higher than the transition temperature, so that the pickup can be performed with a small force. Each of the first and second adhesive layers is a temperature-sensitive adhesive layer that becomes weak in tackiness when the temperature is increased, and that there is a difference between their transition temperatures.

For example, if the second adhesive layer becomes weaker in adhesiveness at a temperature lower than that of the first adhesive layer, the semiconductor chip can be peeled off faster than the metal foil on the lower surface, and the first adhesive layer becomes thinner. If the adhesiveness becomes weaker at a temperature lower than that of the second adhesive layer, the semiconductor chip can be peeled later than the metal foil on the lower surface. Then, as a method of manufacturing a semiconductor device of the present invention, a first adhesive layer having conductivity and a property of weakening tackiness when the temperature is increased, a ferromagnetic metal foil, and a conductivity are formed on the upper surface of the base resin sheet. Having a four-layer structure in which a second adhesive layer having a four-layer structure is sequentially laminated, a semiconductor wafer is bonded to an adhesive sheet for a semiconductor, adsorbed on an electromagnetic disk, cut by a dicer, and then another sheet is placed above the cut semiconductor wafer. An electromagnetic disk is placed, both electromagnetic disks are turned on and off, the adhesive strength of the second adhesive layer is reduced, and the semiconductor chip is picked up.

In this case, not only is static electricity not accumulated, but also the object to be adhered is more uniform than the pressure-sensitive adhesive layer due to the fine vibration of the upper and lower sides of the magnetic disk that vibrates the magnetic foil by turning on and off both electromagnetic disks. Peeled off by force. Further, as another manufacturing method, a first adhesive layer having conductivity and a property of weakening tackiness when the temperature is increased, a ferromagnetic metal foil, and a second adhesive having conductivity are provided on the upper surface of the base resin sheet. A semiconductor wafer is bonded to a semiconductor pressure-sensitive adhesive sheet having a four-layer structure in which adhesive layers are sequentially laminated, and the semiconductor wafer is adsorbed on an electromagnetic disk, cut by a dicer, and then heated to weaken the adhesive strength of the first adhesive layer. May pick up the semiconductor chip.

In this case, no static electricity is accumulated,
Not only can the pickup be performed with a small force, but also the pickup can be performed with an electromagnet, so that the surface of the semiconductor chip is not contaminated unlike vacuum suction.

[0019]

Embodiments of the present invention will be described below with reference to examples. Example 1 FIG. 1A is a sectional view of an adhesive sheet 21 according to the present invention. 22 is a base resin sheet such as a polyester sheet, 23 is a first adhesive layer, 24 is a ferromagnetic foil, 25 is a second adhesive layer, and 26 is a cover film.

FIG. 1B is a sectional view showing a state in which the cover film 26 of the pressure-sensitive adhesive sheet of FIG. 1A is peeled off and the silicon wafer 7 in which the semiconductor device is built on the second adhesive layer 24. It is. Here, the base resin sheet 22, the first adhesive layer 23, the ferromagnetic foil 24, and the second adhesive layer 25 all have conductivity.

FIG. 2 is a diagram in which an adhesive sheet 21 to which a silicon wafer 7 is adhered is attached to an electromagnetic disk 28 containing an electromagnet. When the adhesive sheet 21 is
When it is put on the top and the electromagnet of the electromagnetic disk 28 is turned on,
Ferromagnetic foil 24 in adhesive sheet 21 and electromagnetic disk 28
The adhesive sheet 21 to which the silicon wafer 7 is adhered is fixed on the electromagnetic disk 28 by the magnetic attraction between the magnetic disk 28 and the magnetic disk 28.

FIG. 3A is a diagram showing a cutting state with a dicing saw. The electromagnetic disk 28 on which the adhesive sheet 21 is mounted is mounted on the stage 9 of the dicing saw. The method of attachment may be mechanically held or magnetically held. The blade 11 of the dicing saw is formed by dispersing diamond powder on the surface of a metal having a thickness of several tens of μm. The blade 11 is sandwiched between blade holders 12, and is firmly fixed to the blade rotating shaft 16 with set screws 12a. After precisely adjusting the height of the stage 9 so as to cut a part of the base resin sheet 22, the blade 9 is rotated about 50,000 revolutions (rpm) by the blade rotation motor 16 to cut the silicon wafer 7 at ultra high speed.

The motor arm on which the blade rotation motor 16 is mounted is moved by the y-axis moving guide 18 in the y-axis direction (in the depth direction of the drawing) to cut the silicon wafer 7. Subsequently, the semiconductor wafer 7 is moved by the x-axis movable table 10 at a predetermined pitch in the x-axis direction (left-right direction on the paper surface), and cuts the semiconductor wafer 7 in the y-axis direction. When the cutting in one direction is completed by repeating this, the stage 9 is rotated 90 ° together with the adhesive sheet 21 by the rotating shaft 13 and the same operation is repeated to chip the silicon wafer 7 into a predetermined size.

During cutting, high-pressure water 15 of about 10 kg / cm ² is sprayed from another washing nozzle 14 on the upper side of the drawing, in two directions shown in the drawing,
Rinse chips when cutting. FIG. 3B is a diagram illustrating a state after the cutting is completed by the dicing saw. The cut semiconductor chip 7 a is adhered on the adhesive sheet 21.

Next, another electromagnetic disk 29 is placed on the cut semiconductor chip 7a [FIG.
(A)]. Since both of the electromagnetic disks 28 and 29 have a built-in electromagnet, the two electromagnets are turned on and off.
By repeatedly turning off, the force 31 by the magnetic field of the electromagnetic disk 28 is received across the ferromagnetic foil 24, and the force 32 by the magnetic field of the electromagnetic disk 29 is received, and vibration is generated between the attracted portion and the attracted portion. And it becomes easy to peel off [FIG.

Then, the semiconductor chip 7a is picked up by the vacuum tweezers 33 [FIG. 3 (c)] and die-bonded to a predetermined position 52 of the circuit board 51 with a brazing material 53 or the like [FIG. A conductive adhesive may be used.
According to such a manufacturing method, first, static electricity generated between the blade 11 rotating at high speed and the pressurized water 15 of pure water flows to the stage 9 through the fixed conductive adhesive sheet, and passes through the dicing saw. Since it is grounded, it does not accumulate on the semiconductor wafer and no problem of electrostatic breakdown occurs.

Further, an electromagnetic disk 29 different from the electromagnetic disk 28 on the lower surface of the adhesive sheet 21 is disposed above the semiconductor chip 7a, and upper and lower electromagnets generate alternately up and down magnetic fields. Is vibrated, the semiconductor chip 7a is separated from the second adhesive layer 25 by the fine vibration. Since this peeling force is a uniform force, it is possible to prevent damage such as cracks generated on the side edge of the bottom surface of the semiconductor chip when the conventional adhesive sheet is spread or the projection is pushed up.

As described above, by employing the manufacturing method of the present invention, it is possible to suppress electrostatic breakdown or damage to the chip bottom surface, which is a problem of the conventional method. Further, if a temperature-sensitive adhesive whose adhesive strength becomes weak at a low temperature, for example, about 80 ° C., is selected as the second adhesive layer 25, the semiconductor chip 7a can be more easily separated by heating,
There is no such a problem, and damage to the bottom surface of the semiconductor chip 7a is further reduced.

Embodiment 2 As the first adhesive layer 23, an adhesive whose adhesive strength is weak at a low temperature, for example, about 80 ° C., that is, a temperature-sensitive adhesive is used. After the cutting is completed in the same manner as in Example 1, the adhesive sheet 21 on which the semiconductor chip 7a is placed
Is heated by the heater 34 [FIG. 5 (a)].

The adhesive strength of the first adhesive layer 23 decreases,
The semiconductor chip 7a is easily peeled off from the lower surface of the ferromagnetic foil 24 [FIG. The semiconductor chip 7a having the ferromagnetic foil 24 is picked up by a pickup arm 36 having an electromagnet 35 at the tip [FIG. 10 (c)]. A predetermined portion 52 of the circuit board 51 is die-bonded with a brazing material 54 (FIG. 4D).

In this manner, the adhesive strength of the first adhesive layer 23 is weakened, and the semiconductor chip 7a is peeled off from the lower surface of the ferromagnetic foil 24.
There is no damage such as cracks on the side edge of the bottom of a.
Further, since the pickup is performed by the pickup arm 36 having the electromagnet 35, the problem of contamination of the surface of the semiconductor chip as in conventional vacuum tweezers can be avoided. Since both the ferromagnetic foil 24 and the second adhesive layer 25 are conductive, there is no problem of electric contact on the lower surface side of the semiconductor chip 7a and no problem of electrostatic breakdown.

[Embodiment 3] Just as described in Embodiment 2, the first adhesive layer 23 is formed at a low temperature, for example, about 8 ° C.
At 0 ° C., the adhesive strength becomes weak, that is, a temperature-sensitive adhesive is used. After the cutting is completed in the same manner as in the first embodiment, the electromagnetic disk 29 is set on the semiconductor chip 7a (FIG. 6A).

When the pressure-sensitive adhesive sheet 21 is heated by the heater 34, the adhesive strength of the first adhesive layer 23 is reduced, and the semiconductor chip 7a is peeled off from the lower surface of the ferromagnetic foil 24, and is magnetically moved toward the electromagnetic disk 29. Attracted [FIG. (B)]. Next, the electromagnetic disk 29 is turned upside down while the cut semiconductor chip 7a is attached, and a pickup arm 36 having an electromagnet 35 at its tip is used to attract the upper surface of the ferromagnetic foil 24 to the lower surface of the electromagnet 35 to be picked up. [FIG. (C)].

A predetermined portion 52 of the circuit board 51 is flip-chip bonded face down with a conductive adhesive 54 [FIG. Also in this case, the adhesive strength of the first adhesive layer 23 is weakened, and the semiconductor chip 7a is peeled off from the lower surface of the magnetic foil 24.
There is no damage such as cracks on the side edge of the bottom surface. Further, since the pickup is performed by the pickup arm 36 having the electromagnet 35, the problem of contamination of the semiconductor chip surface can be avoided.

Example 4 In this example, the first adhesive layer,
As the second adhesive layer, a temperature-sensitive adhesive is used. And the first adhesive layer has a low temperature, for example, about 80 ° C.
For the second adhesive layer, a temperature-sensitive adhesive whose adhesive strength becomes weaker at a higher temperature, for example, 100 ° C. is used.

After the cutting is completed in the same manner as in Example 3, an electromagnetic disk is placed on the semiconductor chip and heated to 90 ° C. with a heater. The chip peels off from the lower surface of the ferromagnetic foil and is attracted to the electromagnetic disk by magnetic force. Next, the electromagnetic disk is turned upside down with the cut semiconductor chips attached, and the ferromagnetic foil 2 is applied to the lower surface of the electromagnet 35 by the pickup arm 36 having the electromagnet 35 at the tip.
Suck the top of 4 and pick it up. Circuit board 51
Is die-bonded to the predetermined portion 52 with a conductive adhesive 54 or the like [FIG. 7A].

The second adhesive layer 2 is heated to 110 ° C. by a heater 45 built in the pickup arm 36.
5, the ferromagnetic foil 24 is removed from the surface of the semiconductor chip 7a [FIG. Also in this case, since the pickup is performed by the pickup arm 36 having the electromagnet 35, the problem of contamination of the semiconductor chip surface can be avoided. The second adhesive layer 25 comes into contact with the surface of the semiconductor chip 7a, but only the second adhesive layer 25, and it is not impossible to know what kind of contamination is attached as in the case of vacuum tweezers. Rather, it can be considered that the surface of the semiconductor chip 7a is protected by the second adhesive layer 25. The silicon wafer may be bonded and placed on the second adhesive layer 25 with the fabricated surface of the semiconductor device facing down.

In the above-described embodiments, an example using a silicon wafer has been described. However, the present invention can also be applied to chip formation of thin plates of other various semiconductors, ceramics, glass, and the like.

[0039]

As described above, according to the present invention, by using a base resin sheet having conductivity and a pressure-sensitive adhesive sheet for semiconductor comprising first and second adhesive layers and metal foil, The static electricity generated when the semiconductor wafer is cut is discharged, and the semiconductor device is free from the problem of electrostatic breakdown.

In particular, if the metal foil is ferromagnetic, the magnetic foil is vibrated by attaching and detaching the semiconductor wafer to and from the electromagnetic disk, and turning on and off both electromagnetic disks using two electromagnetic disks. It can be used for peeling of a semiconductor chip from an adhesive layer or picking up of a peeled chip due to vertical fine vibration. Further, by using a temperature-sensitive adhesive layer as the adhesive layer, peeling can be further facilitated.

The method described above facilitates the peeling of the semiconductor chip from the pressure-sensitive adhesive sheet, and can reduce damages such as cracks and chips near the side edges of the bottom surface of the semiconductor chip, which have been a problem in the conventional method.

[Brief description of the drawings]

FIG. 1A is a cross-sectional view of the pressure-sensitive adhesive sheet of the present invention, and FIG.
Is a cross-sectional view of a semiconductor wafer bonded to the adhesive sheet of FIG.

FIG. 2 is a cross-sectional view in which an adhesive sheet to which a semiconductor wafer is bonded is attached to an electromagnetic disk.

3A is a cross-sectional view in which an electromagnetic disk is attached to a dicer, and FIG. 3B is a cross-sectional view of the electromagnetic disk after cutting is completed.

FIGS. 4A to 4D are cross-sectional views of Example 1 in the order of the manufacturing process.

FIGS. 5A to 5D are cross-sectional views in the order of the manufacturing process of the second embodiment.

FIGS. 6A to 6D are cross-sectional views in the order of the manufacturing process of the third embodiment.

FIGS. 7A and 7B are cross-sectional views of a fourth embodiment in the order of the manufacturing process.

8A is a sectional view of a conventional example at the time of cutting, FIG. 8B is a sectional view after cutting, and FIG. 8C is a plan view after cutting.

FIG. 9A is a cross-sectional view before expansion by a conventional method, and FIG.
Is the cross section after expansion

FIG. 10A is a cross-sectional view before being pushed up by a conventional method,
(B) is a sectional view after pushing up.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1, 21 Adhesive sheet 2, 22 Base resin sheet 3 Adhesive layer 6, 26 Cover film 7 Silicon wafer 7a Semiconductor chip 9 Stage 10 X-axis movable table 11 Blade 12 Blade holding 12a Set screw 13 Rotating shaft 14 Nozzle 15 High pressure water 16 Rotating motor 17 Motor shaft 18 Y-axis guide 19 Suction groove 20 Cutting line 23 First adhesive layer 24 Ferromagnetic foil 25 Second adhesive layer 28 Electromagnetic disk 29 Electromagnetic disk 31 Suction force by electromagnetic disk 28 32 Electromagnetic disk 29 Attraction force 33 Vacuum tweezers 34 Heater 35 Electromagnet 36 Pickup arm 37 Crack 38 Chipping 41 Projection plate 42 Projection 45 Built-in heater 51 Circuit board 52 Predetermined position 53 Brazing material 54 Conductive adhesive

Claims (8)

[Claims] An adhesive sheet for holding a semiconductor wafer having a four-layer structure in which a first adhesive layer, a metal foil, and a second adhesive layer are sequentially laminated on an upper surface of a base resin sheet. A pressure-sensitive adhesive sheet for semiconductors, wherein the resin sheet and the first and second adhesive layers both have conductivity. 2. The pressure-sensitive adhesive sheet for semiconductor according to claim 1, wherein the metal foil is made of a ferromagnetic material. 3. The pressure-sensitive adhesive sheet for semiconductors according to claim 1, wherein at least one of the pressure-sensitive adhesive layers is a temperature-sensitive pressure-sensitive adhesive layer whose tackiness decreases when the temperature increases. 4. A temperature-sensitive adhesive layer in which the first and second adhesive layers both become less adhesive when the temperature is higher,
4. The method according to claim 3, wherein the transition temperatures are different.
The pressure-sensitive adhesive sheet for a semiconductor according to the above. 5. The adhesive layer according to claim 1, wherein the first and second adhesive layers are both temperature-sensitive adhesive layers whose tackiness decreases as the temperature increases.
5. The adhesive for a semiconductor according to claim 4, wherein the second adhesive layer has a lower adhesiveness at a temperature lower than that of the first adhesive layer, so that the adherend can be peeled off faster than the metal foil on the lower surface. Sheet. 6. The first and second adhesive layers are both temperature-sensitive adhesive layers whose tackiness decreases when the temperature increases.
The semiconductor device according to claim 4, wherein the first adhesive layer has a lower adhesiveness at a temperature lower than that of the second adhesive layer, so that the adherend can be peeled off later than the metal foil on the lower surface. Adhesive sheet. 7. A first adhesive layer having conductivity and a property of weakening tackiness when the temperature is increased, a ferromagnetic metal foil, and a second adhesive layer having conductivity are sequentially provided on the upper surface of the base resin sheet. A semiconductor wafer is adhered to an adhesive sheet for a semiconductor having a laminated four-layer structure, adsorbed to an electromagnetic disk, cut by a dicer, and then another electromagnetic disk is placed above the cut semiconductor wafer, and both electromagnetic disks are placed. A method for manufacturing a semiconductor device, comprising: turning a disk on and off, weakening the adhesive strength of a second adhesive layer, and picking up a semiconductor chip. 8. A first adhesive layer having conductivity and a property of becoming weak in tackiness when the temperature is increased, a ferromagnetic metal foil, and a second adhesive layer having conductivity are sequentially provided on the upper surface of the base resin sheet. A semiconductor wafer is adhered to a semiconductor adhesive sheet having a laminated four-layer structure, adsorbed to an electromagnetic disk, cut by a dicer, heated to weaken the adhesive strength of the first adhesive layer, and a semiconductor chip is magnetized. A method for manufacturing a semiconductor device, characterized by picking up.