JPH10303124A - Manufacture of semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To accurately form patterns on wafers without causing dispersion among the wafers at the high volume production of an LSI by using a plurality of etching devices. SOLUTION: In a semiconductor device manufacturing method in which a desired integrated circuit pattern is formed by performing pattern exposure and etching on wafers, two or more kinds, maximum n kinds, of photomasks 13 are prepared corresponding to used etching devices 16, and a pattern which is corrected for the pattern conversion difference caused by the corresponding etching device 16 is formed in advance on each photomask 13 in forming the same integrated circuit pattern on a plurality of wafers by using one exposing device 14 and n (n>=2) sets of etching devices 16 in parallel.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor device for forming an integrated circuit pattern by subjecting a substrate to be processed to pattern exposure and etching, and particularly to mass production using a plurality of the same type of process equipment. For manufacturing a semiconductor device.

[0002] The present invention also relates to an apparatus for creating data of a photomask used for forming an integrated circuit pattern, and further relates to a recording medium storing a program for creating data of the photomask by a computer.

[0003]

2. Description of the Related Art As the degree of integration of LSIs increases and the size of elements formed in the LSIs decreases, the fidelity of pattern transfer in a lithography process has begun to become a problem. Specifically, phenomena such as rounding of a corner, which should be 90 degrees in design, shortening of a line end, and widening / narrowing of a line width occur (optical proximity effect). If the absolute value of the allowable dimensional error decreases as the pattern becomes finer, the allowable dimensional error may exceed the allowable dimensional error due to the optical proximity effect.

The causes of the optical proximity effect include an optical factor in exposure (interference of transmitted light between adjacent patterns), a resist process (bake temperature / time, development time, etc.), reflection and unevenness of a substrate, and etching. Influence. As a method of preventing the problem that the pattern fidelity is degraded by the optical proximity effect, a method of applying a correction in advance on the mask in anticipation of the degradation is mainly used (optical proximity effect correction).

The concept of the optical proximity effect correction is to (1) correct only the conversion difference in the exposure process-based on an optical image simulation, and (2) correct the conversion difference in exposure and development-a simulation including development up to Or by convolving the optical image with a Gaussian function to simulate development, and (3) correcting the conversion difference from exposure to etching.

In (1) and (2), the conversion accuracy due to the etching cannot be taken in, so that the finishing accuracy may not be sufficient depending on the etching conditions. On the other hand, (3) can cope with cases where the conversion difference due to etching is large.
It is considered that this method is higher in principle than (1) and (2).

The first conventional method classified into the above (3) is (Optical / Laser Microlithography VII, Vol. 2197,
SPIE Symposium On Microlithography, 1994, p278-293)
(Oberdan W. Otto) et al. (Automated opti
cal proximity correction-arule-based approach).

In this method, a test pattern is actually formed under lithography conditions and etching conditions used in an actual integrated circuit product, and a finished pattern is measured. Interpolate some discrete data obtained by length measurement with the tendency obtained by simulation (“anch
oring ").

For example, a series of test patterns in which the line width is fixed and the space is changed in a line-and-space pattern are created, and etching is performed under actual process conditions. Measure the finished dimensions after etching,
A correspondence relationship between the space and the conversion difference is created. Since the point data obtained in the experiment is point data, an optical image (or including development) simulation is performed, and the points are interpolated according to the tendency obtained by the simulation. The actual integrated circuit pattern is corrected based on the obtained relationship between the space and the conversion difference.

As the second conventional method classified into the above (3), (Optical / Laser Microlithography VII, Vol2322,
SPIE Symposium On Microlithography, 1994, p371-378)
(John P. Stirniman) et al. (Fast proximi
ty correction with zone sampling).

Also in this method, a test pattern is actually formed under lithography conditions and etching conditions used in an actual integrated circuit product, and a finished pattern is measured. A behavior model is constructed using the data obtained by the length measurement. The behavior model expresses the conversion difference by a polynomial, and the variables of the polynomial correspond to the layout. The coefficients of the polynomial are determined using the length measurement data. Then, once this behavior model is constructed, it is possible to obtain a conversion difference at an arbitrary point in an arbitrary layout.

On the other hand, a conventional semiconductor manufacturing process in which the optical proximity effect correction is not performed is referred to as a third conventional method, and FIG.
This will be described with reference to FIG. Conventionally, when the same integrated circuit product is mass-produced, a plurality of identical photomasks 13 are prepared from the CAD data 11 and mounted on an exposure apparatus 14 for use. Figure 1 three exposure apparatus in the case shown in (a) 14 ₁
-14 ₃ has, two of the etching apparatus 16 _1, 16 ₂
There is. The wafers exposed by the exposure devices 14 ₁ and 14 ₃ are etched by the etching devices 16 ₁ and 16 ₂ , respectively. The wafers exposed by the exposure device 14 ₂ may be processed by the etching device 16 ₁ shows a state that some of which are processed in the etching apparatus 16 _2.

However, this type of method has the following problems. For the first and second conventional methods, the test mask is processed under the same process conditions as the product,
Although it is stated that correction should be performed based on the data, there is no mention of how to correspond to a photomask when there are a plurality of exposure apparatuses and etching apparatuses used in an actual mass production site.

Another problem in the first and second conventional methods is that when the process conditions are changed in any of the exposure apparatus, the coating / developing apparatus, and the etching apparatus,
The photomask must also be changed. If the difference in the nature of the pattern conversion difference is within the allowable range even if the process conditions are changed, there is no need to recreate the photomask, and wasteful work is performed.

Although the optical proximity effect correction is not performed in the third conventional method, a semiconductor manufacturing process in which the correction is performed in consideration of the optical proximity effect is as shown in FIG. 1B.
Here, for example, an exposure apparatus 14 ₂ and the etching apparatus 1
Try to assume a situation in which correction is performed in consideration of the optical proximity effect that occurs when using a combination of 6 _1.

[0016] In accordance with the first and second conventional methods, for measuring a test mask by etching in exposing the test mask by the exposure apparatus 14 ₂ etching apparatus 16 _1. Based on the result of the measurement, the CAD data 11 is subjected to optical proximity effect correction to obtain optical proximity effect correction data 12. A photomask is created from the correction data 12.

[0017] The photomask subjected to such correction is mounted on the exposure apparatus 14 _2, but if it is etched by the etching apparatus 16 ₁ good results are obtained, the etching apparatus 16 ₁ and significantly different etching apparatus in properties 16 ₂
When the pattern is used, the finished dimension of the pattern is deviated from the desired dimension. In particular, compared to controlling the finished dimensions with multiple etching devices of the same manufacturer,
It is known that it is difficult to control the dimensions between etching apparatuses of different manufacturers.

Although the exposure apparatus can control the finished dimensions to some extent by adjusting the optical conditions such as wavelength, numerical aperture, and coherence factor, the exposure apparatus has a slight difference between different apparatuses.

[0019]

As described above, conventionally, when LSIs are mass-produced by using a plurality of exposure apparatuses and etching apparatuses, a plurality of substrates to be processed manufactured using different exposure apparatuses and etching apparatuses are required. Variations in pattern finish dimensions occur due to differences in the properties of the apparatus relating to the pattern conversion differences.

The present invention has been made in consideration of the above circumstances. It is an object of the present invention to provide a method for mass-producing an LSI using a plurality of exposure apparatuses and etching apparatuses. It is an object of the present invention to provide a method of manufacturing a semiconductor device capable of forming a pattern with high accuracy without dimensional variations.

[0021]

[Means for Solving the Problems]

(Structure) The present invention for solving the above problems employs the following structure. (1) In a method of manufacturing a semiconductor device for forming a desired integrated circuit pattern by exposing and etching a pattern on a substrate to be processed, n (n is 2 or more) etching apparatuses are used in parallel. When the same integrated circuit pattern is formed on a plurality of substrates to be processed, two or more types and up to n types of photomasks are prepared corresponding to the etching apparatus to be used, and the etching masks corresponding to the respective photomasks are prepared. It is characterized in that a pattern in which a pattern conversion difference generated by the device is corrected is formed in advance.

(1-1) It is determined whether the properties for the pattern conversion difference are the same or different for the etching apparatus, and the same type of photomask is used for the etching apparatus determined to have the same property for the pattern conversion difference. . (1-2) Judgment of whether the properties related to the pattern conversion difference of the etching apparatus are the same or different is performed by exposing and etching a mask pattern including a line-and-space pattern, and finishing the pattern formed on the substrate to be processed. Is measured, and if the difference due to the apparatus or process conditions is within a predetermined allowable range, the properties are considered to be the same, and if the difference is larger than the allowable range, it is considered to be different.

(1-3) To determine whether the properties relating to the pattern conversion difference of the etching apparatus are the same or different, a mask pattern including a contact hole pattern is subjected from exposure to etching, and the pattern formed on the substrate to be processed is determined. The finished dimensions are measured, and if the difference due to the equipment or process conditions is within a predetermined allowable range, the properties are considered to be the same, and if the difference is larger than the allowable range, it is considered to be different.

(1-4) To determine whether or not the properties of the etching apparatus relating to the pattern conversion difference are the same or different, a typical pattern included in the photomask to be corrected is subjected from exposure to etching to form a pattern formed on the substrate to be processed. The finished dimension of the pattern is measured, and if the difference due to the apparatus or process conditions is within a predetermined allowable range, the properties are regarded as the same, and if the difference is larger than the allowable range, the properties are regarded as different.

(2) In a method of manufacturing a semiconductor device for forming a desired integrated circuit pattern by exposing and etching a pattern on a substrate to be processed, m exposure apparatuses and n etching apparatuses are arranged in parallel. (M,
n is two or more), and when forming the same integrated circuit pattern on a plurality of substrates to be processed, there are two types corresponding to the combination of an exposure apparatus and an etching apparatus used for one substrate to be processed. As described above, a maximum of m × n types of photomasks are prepared, and a pattern in which a pattern conversion difference caused by a combination of a corresponding exposure apparatus and an etching apparatus is corrected is formed on each photomask.

(2-1) It is determined whether or not the properties for the pattern conversion difference are the same or different for the exposure apparatus, and the same type of photomask is associated with the exposure apparatus for which the properties for the pattern conversion difference are determined to be the same. . (2-2) To determine whether the properties related to the pattern conversion difference of the exposure apparatus are the same or different, after exposing and developing a mask pattern including a line and space pattern, measure the length of the resist pattern, Alternatively, if the difference due to the process conditions is within a predetermined allowable range, the properties are regarded as the same, and if the difference is larger than the allowable range, the properties are regarded as different.

(2-3) To determine whether or not the properties of the exposure apparatus relating to the pattern conversion difference are the same or different, determine the size of the resist pattern after exposing and developing a mask pattern including a contact hole pattern. If the difference due to the apparatus or process conditions is within a predetermined allowable range, the properties are regarded as the same, and if the difference is larger than the allowable range, the properties are regarded as different.

(2-4) To determine whether the properties of the exposure apparatus relating to the pattern conversion difference are the same or different, determine the dimensions of the resist pattern after exposing and developing a typical pattern included in the photomask to be corrected. On the other hand, if the difference due to the apparatus or process conditions is within a predetermined allowable range, the properties are considered to be the same, and if the difference is larger than the allowable range, it is considered to be different.

(2-5) It is determined whether the properties for the pattern conversion difference are the same or different for the etching apparatus, and the same type of photomask is used for the etching apparatus determined to have the same property for the pattern conversion difference. . (2-6) Judgment of whether the properties related to the pattern conversion difference of the etching apparatus are the same or different is performed from exposure to etching of the mask pattern including the line-and-space pattern, and the finished dimensions of the pattern formed on the substrate to be processed. Is measured, and if the difference due to the apparatus or process conditions is within a predetermined allowable range, the properties are considered to be the same, and if the difference is larger than the allowable range, it is considered to be different.

(2-7) To determine whether or not the properties of the etching apparatus regarding the pattern conversion difference are the same or different, a mask pattern including a contact hole pattern is subjected from exposure to etching, and the pattern formed on the substrate to be processed is determined. The finished dimensions are measured, and if the difference due to the equipment or process conditions is within a predetermined allowable range, the properties are considered to be the same, and if the difference is larger than the allowable range, it is considered to be different.

(2-8) To determine whether the properties related to the pattern conversion difference of the etching apparatus are the same or different, a typical pattern included in the photomask to be corrected is subjected from exposure to etching to form a pattern on the substrate to be processed. The finished dimension of the pattern is measured, and if the difference due to the apparatus or process conditions is within a predetermined allowable range, the properties are regarded as the same, and if the difference is larger than the allowable range, the properties are regarded as different.

(3) In a method of manufacturing a semiconductor device for forming a desired integrated circuit pattern by exposing and etching a pattern on a substrate to be processed, m exposure apparatuses,
k coating / developing devices and n etching devices are used in parallel (at least one of k, m, and n is 2
As described above, when the same integrated circuit pattern is formed on a plurality of substrates to be processed, two or more types of exposure devices, coating / developing devices, and etching devices are used for one substrate to be processed. Prepare a maximum of k × m × n types of photomasks, and form a pattern on each photomask in which the pattern conversion difference caused by the combination of the corresponding exposure device, coating / developing device, and etching device has been corrected. It is characterized by.

(3-1) It is determined whether or not the properties for the pattern conversion difference are the same or different for the exposure apparatus, and the same type of photomask is used for the exposure apparatus for which the properties for the pattern conversion difference are determined to be the same. . (3-2) To determine whether the properties related to the pattern conversion difference of the exposure apparatus are the same or different, after exposing and developing a mask pattern including a line-and-space pattern, measure the length of the resist pattern, Alternatively, if the difference due to the process conditions is within a predetermined allowable range, the properties are regarded as the same, and if the difference is larger than the allowable range, the properties are regarded as different.

(3-3) To determine whether the properties of the exposure apparatus relating to the pattern conversion difference are the same or different, determine the size of the resist pattern after exposing and developing a mask pattern including a contact hole pattern. If the difference due to the apparatus or process conditions is within a predetermined allowable range, the properties are regarded as the same, and if the difference is larger than the allowable range, the properties are regarded as different.

(3-4) To determine whether the properties of the exposure apparatus regarding the pattern conversion difference are the same or different, determine the dimensions of the resist pattern after exposing and developing a typical pattern included in the photomask to be corrected. On the other hand, if the difference due to the apparatus or process conditions is within a predetermined allowable range, the properties are considered to be the same, and if the difference is larger than the allowable range, it is considered to be different.

(3-5) For the coating / developing apparatus, it is determined whether the properties for the pattern conversion difference are the same or different, and the same type of photomask is used for the coating / developing apparatus determined to have the same property for the pattern conversion difference. To correspond. (3-6) To determine whether the properties related to the pattern conversion difference of the coating / developing device are the same or different, after exposing and developing a mask pattern including a line and space pattern, measure the length of the resist pattern. If the difference due to the apparatus or process conditions is within a predetermined allowable range, the properties are regarded as the same, and if the difference is larger than the allowable range, the properties are regarded as different.

(3-7) The determination as to whether the properties relating to the pattern conversion difference of the coating / developing apparatus are the same or different is performed by exposing and developing a mask pattern including a contact hole pattern, and then measuring the length of the resist pattern. If the difference due to the apparatus or process conditions is within a predetermined allowable range, the properties are considered to be the same, and if they are larger than the allowable range, they are considered to be different.

(3-8) Whether the properties relating to the pattern conversion difference of the coating / developing apparatus are the same or different is determined by exposing / developing a typical pattern included in the photomask to be corrected and then dimensioning the resist pattern. Is measured, and if the difference due to the apparatus or process conditions is within a predetermined allowable range, the properties are regarded as the same, and if the difference is larger than the allowable range, the properties are regarded as different.

(3-9) It is determined whether the properties for the pattern conversion difference are the same or different for the etching apparatus, and the same type of photomask is used for the etching apparatus determined to have the same property for the pattern conversion difference. . (3
-10) To determine whether the properties related to the pattern conversion difference of the etching apparatus are the same or different, perform the mask pattern including the line and space pattern from exposure to etching, and measure the finished dimensions of the pattern formed on the substrate to be processed. On the other hand, if the difference due to the apparatus or process conditions is within a predetermined allowable range, the properties are considered to be the same, and if they are larger than the allowable range, they are considered to be different.

(3-11) To determine whether the properties related to the pattern conversion difference of the etching apparatus are the same or different, a mask pattern including a contact hole pattern is subjected from exposure to etching, and the pattern formed on the substrate to be processed is determined. The finished dimensions are measured, and if the difference due to the apparatus or process conditions is within a predetermined allowable range, the properties are regarded as the same, and if the difference is larger than the allowable range, the properties are regarded as different.

(3-12) To determine whether or not the properties related to the pattern conversion difference of the etching apparatus are the same or different, a typical pattern included in the photomask to be corrected is subjected from exposure to etching to form on the substrate to be processed. The finished dimension of the pattern is measured, and if the difference due to the apparatus or process conditions is within a predetermined allowable range, the properties are regarded as the same, and if the difference is larger than the allowable range, the properties are regarded as different.

(4) In a photomask used in a semiconductor manufacturing process, information for identifying an etching apparatus that processes a wafer exposed by the photomask is a machine-readable character string or bar code, or a human-readable character string. It is characterized by being included in the form of possible character strings and symbols.
(4-1) The identification information of the etching apparatus must be a mask pattern to be exposed on the wafer.

(5) In a photomask used in a semiconductor manufacturing process, information for identifying an etching apparatus and an exposure apparatus for processing a wafer exposed by the photomask is a machine-readable character string or bar code, or It is characterized by being included in the form of human-readable character strings and symbols. (5-1) The identification information of the etching apparatus and the exposure apparatus is a mask pattern to be exposed on the wafer.

(6) In a photomask used in a semiconductor manufacturing process, information for identifying an etching apparatus, an exposure apparatus, and a coating / developing apparatus for processing a wafer exposed by the photomask is a machine-readable character string. Or a barcode, or a human-readable character string or symbol. (6-1) The identification information of the etching device, the exposure device, and the coating / developing device is a mask pattern to be exposed on the wafer.

(7) In a photomask used in a semiconductor manufacturing process, the identification information of a processing device that processes a wafer exposed by the photomask is a machine-readable character string or bar code, or a human-readable character. Columns,
It is characterized by being included in the form of a symbol. (7-1) In addition to the identification information of the process device, information indicating the condition of the process device and the procedure of the process shall be included. (7-2) The identification information of the process device, the condition of the process device, and the identification information of the process procedure are mask patterns to be exposed on the wafer.

(8) In a method of manufacturing a semiconductor device for forming a desired integrated circuit pattern by exposing and etching a pattern on a substrate to be processed, m exposure apparatuses,
k coating / developing devices and n etching devices are used in parallel (at least one of k, m, and n is 2
As described above, when the same integrated circuit pattern is formed on a plurality of substrates to be processed, two or more types of exposure devices, coating / developing devices, and etching devices are used for one substrate to be processed. A maximum of k × m × n types of photomasks are prepared, and a pattern on which a pattern conversion difference caused by a combination of a corresponding exposure device, coating / developing device, and etching device is formed is formed on each photomask. When the process conditions in the exposure apparatus, the coating / developing apparatus, or the etching apparatus are changed, it is determined whether the property of the pattern conversion difference is the same or different before and after the process conditions are changed in the apparatus in which the process conditions are changed. If the difference due to the conditions is within the predetermined allowable range, use the old photomask.If not, set the new conditions. And a correction mask.

(8-1) To determine whether the properties related to the pattern conversion difference of the exposure apparatus are the same or different, after exposing and developing a mask pattern including a line and space pattern, measure the length of the resist pattern. If the difference due to the apparatus or process conditions is within a predetermined allowable range, the properties are regarded as the same, and if the difference is larger than the allowable range, the properties are regarded as different.

(8-2) To determine whether the properties related to the pattern conversion difference of the exposure apparatus are the same or different, determine the length of the resist pattern after exposing and developing a mask pattern including a contact hole pattern. If the difference due to the apparatus or process conditions is within a predetermined allowable range, the properties are regarded as the same, and if the difference is larger than the allowable range, the properties are regarded as different.

(8-3) To determine whether the properties of the exposure apparatus relating to the pattern conversion difference are the same or different, determine the dimensions of the resist pattern after exposing and developing a typical pattern included in the photomask to be corrected. On the other hand, if the difference due to the apparatus or process conditions is within a predetermined allowable range, the properties are considered to be the same, and if the difference is larger than the allowable range, it is considered to be different.

(8-4) To determine whether the properties regarding the pattern conversion difference of the coating / developing apparatus are the same or different, determine the dimensions of the resist pattern after exposing / developing a mask pattern including a line-and-space pattern. On the other hand, if the difference due to the apparatus or process conditions is within a predetermined allowable range, the properties are considered to be the same, and if they are larger than the allowable range, they are considered to be different.

(8-5) To determine whether the properties relating to the pattern conversion difference of the coating / developing apparatus are the same or different, determine the dimension of the resist pattern after exposing and developing a mask pattern including a contact hole pattern. If the difference due to the apparatus or process conditions is within a predetermined allowable range, the properties are considered to be the same, and if they are larger than the allowable range, they are considered to be different.

(8-6) The determination as to whether the properties relating to the pattern conversion difference of the coating / developing apparatus are the same or different is made by exposing / developing a typical pattern included in the photomask to be corrected, and then measuring the size of the resist pattern. Is measured, and if the difference due to the apparatus or process conditions is within a predetermined allowable range, the properties are regarded as the same, and if the difference is larger than the allowable range, the properties are regarded as different.

(8-7) To determine whether the properties of the etching apparatus regarding the pattern conversion difference are the same or different, a mask pattern including a line-and-space pattern is subjected from exposure to etching, and the pattern formed on the substrate to be processed is determined. Is measured, and if the difference due to the apparatus or process conditions is within a predetermined allowable range, the properties are regarded as the same, and if the difference is larger than the allowable range, the properties are regarded as different.

(8-8) The determination as to whether the properties relating to the pattern conversion difference of the etching apparatus are the same or different is performed by exposing and etching a mask pattern including a contact hole pattern and exposing the pattern formed on the substrate to be processed. The finished dimensions are measured, and if the difference due to the apparatus or process conditions is within a predetermined allowable range, the properties are regarded as the same, and if the difference is larger than the allowable range, the properties are regarded as different.

(8-9) To determine whether or not the properties related to the pattern conversion difference of the etching apparatus are the same or different, a typical pattern included in the photomask to be corrected is subjected from exposure to etching to form a pattern formed on the substrate to be processed. The finished dimension of the pattern is measured, and if the difference due to the apparatus or process conditions is within a predetermined allowable range, the properties are regarded as the same, and if the difference is larger than the allowable range, the properties are regarded as different.

(Operation) According to the present invention, when a plurality of etching apparatuses are used for one type of integrated circuit pattern in order to mass-produce an LSI, a pattern conversion difference caused by the corresponding etching apparatus is corrected. By using a photomask including the patterned pattern, it is possible to reduce the variation in the finished pattern size between the etching apparatuses. In addition, even when a plurality of exposure apparatuses are used, variations in finished dimensions can be reduced by using a photomask including a pattern in which a pattern conversion difference generated by the corresponding exposure apparatus is corrected. Further, even when a plurality of coating / developing apparatuses are used, variations in finished dimensions can be reduced by using a photomask including a pattern in which a pattern conversion difference generated by the corresponding coating / developing apparatus is corrected.

When a plurality of devices for pattern formation are used, a photomask including a pattern whose pattern conversion difference has been corrected in accordance with the combination of these devices is used, so that variations in finished dimensions are obtained. Can be reduced. Therefore, it is possible to suppress a variation in dimension between wafers due to a difference in pattern conversion between various devices when mass-producing an LSI, and it is possible to improve a manufacturing yield.

Further, by providing the photomask with identification information of an etching apparatus, an exposure apparatus, and a coating / developing apparatus for processing the wafer exposed by the photomask, the wafer can be sent to an appropriate apparatus. is there. In particular, when the identification information is a mask pattern, it is possible to determine the apparatus used from the wafer, and if there is an abnormality in the wafer, it is easy to find the cause.

Even when only the process conditions in the exposure device, the coating / developing device, and the etching device are changed, the characteristics of the pattern conversion difference before and after the change are compared, and the photomask is used only when necessary for accuracy. Will be recreated, which is more efficient.

[0060]

Embodiments of the present invention will be described below with reference to the drawings. (First Embodiment) FIG. 2 is a flowchart for explaining a manufacturing process of a semiconductor device according to a first embodiment of the present invention.

It is assumed that one type of CAD data 11 exists after the layout design of a certain integrated circuit product is completed.
The optical proximity effect correction is performed on the CAD data 11.
The situation described below is one of the reasons for producing this integrated circuit.
Exposure apparatuses 14 and n etching apparatuses 16 _{1 to} 16
_{Let n} be used.

First, n etching apparatuses 16 _{1 to} 16
Regarding _n , it is checked whether or not the properties regarding the pattern conversion difference are different from each other. At this time, FIGS.
A mask including a line and space pattern as shown in FIG. The width L of the lines included in this pattern group is the minimum line width of the integrated circuit to be produced or the line width of the most important circuit portion. Several kinds of spaces are changed with respect to the line width (S1, S2, S3).

The pattern is exposed using such a mask, and is further etched. The exposure apparatus used for exposure is desirably the same or the same type as used during production, and under the same conditions. The etching is performed by n etching devices 16
_{This is} performed for each of _{1 to} 16 _n . The measurement of the finished dimension measures the pattern existing near the center of the line-and-space pattern.

FIG. 4 shows an example in which n is 4. The horizontal axis in FIG. 4 indicates a space, and the vertical axis indicates a bias amount. The bias amount is obtained by subtracting a finished dimension after etching from a target design dimension. Although the allowable range of the variation is shown in the figure, the difference between the etching conversion differences in the first and second etching apparatuses is that the difference between the two finished dimensions falls within this allowable range in all the space widths. Properties can be considered the same.

The third etching apparatus behaves similarly to the first and second etching apparatuses in a place where the space width is large, but differs in a portion where the space width is small by more than an allowable range. It is considered to have a property related to a pattern conversion difference of a different kind from the etching apparatus. Similarly, the fourth
The etching apparatus also has a property relating to a different type of pattern conversion difference. In other words, in this case, the four etching apparatuses are classified into three types of properties relating to the pattern conversion difference.

Next, the proximity effect correction is performed on the CAD data 11. When the n etching apparatuses 16 _{1 to} 16 _n are classified into N types (N ≦ n) of conversion differences relating to etching, data 121 to _{1 obtained} by performing N types of proximity effect corrections
2 _N and preparing respective photomask 13 ₁ to 13 _N. In the above example, n = 4 and N = 3. As a method of correcting the proximity effect, for example, a method of reading a bias amount according to the space using FIG. 4 and making the line thicker / smaller by the bias amount may be employed.

[0067] During exposure, a wafer property on the pattern conversion difference is processed by the first type of etching apparatus 16 (type 1) is a photomask 13 _1, property on the pattern conversion difference is the type of the N wafers processed by the etching apparatus 16 (type N), exposure is performed using a photomask 13 _N. Here, it is preferable that the photomask 13 has identification information of the corresponding etching apparatus 16.

As described above, according to the present embodiment, when a plurality of etching devices 16 are used for one type of integrated circuit pattern in order to mass-produce an LSI, the pattern conversion generated by the corresponding etching device 16 By using the photomask 13 including the pattern whose difference has been corrected, it is possible to reduce variation in the finished dimension of the pattern between the etching apparatuses. For this reason, LS
It is possible to contribute to the improvement of the production yield for mass production of I.

In this embodiment, the case of performing exposure using a photomask has been described. However, when an integrated circuit pattern is directly drawn by a charged particle beam, pattern data to be drawn is not corrected by proximity effect correction of photomask data. It is clear that the correction is made for

(Second Embodiment) FIG. 5 shows a second embodiment of the present invention.
24 is a flowchart for describing the manufacturing process of the semiconductor device according to the embodiment.

It is assumed that one type of CAD data 11 exists after the layout design of a certain integrated circuit product is completed.
The optical proximity effect correction is performed on the CAD data 11.
The situation described below means that when producing this integrated circuit,
Using the exposure apparatus 14 ₁ to 14 _m of the platform, also during etching and those using n-number of the etching apparatus 16 ₁ ~ 16 _n.

[0072] Prior to optical proximity effect correction, m stand exposure device 14 ₁ to 14 _m and n stand etching device _161-164
Regarding _n , it is checked whether or not the properties regarding the pattern conversion difference are different from each other. n etching apparatuses 16 _{1 to} 16
_{For n,} it is performed by the method described in the first embodiment.

[0073] The number m of the exposure device 14 ₁ to 14 _m is carried out exposure until development using a mask containing the pattern shown in FIG 3. Subsequently, a graph similar to that of FIG. 4 is created. Here, the bias amount on the vertical axis is obtained by subtracting the resist dimensions after development from the target design dimensions. The determination as to whether the properties regarding the pattern conversion difference of the exposure apparatus are the same or different is the same as in the method described in the first embodiment.
As a result, m stand exposure device 14 ₁ to 14 _m is M type (M
.Ltoreq.m).

Depending on the combination of the exposure apparatus 14 and the etching apparatus 16 used in the production, two or more types may be up to m
It is necessary to prepare xn types (M × N types in the present embodiment) of proximity effect corrected data and respective photomasks 13. Hereinafter, this method will be described.

First, a test mask for preparing a correction rule is prepared. This may include, for example, a pattern in which the line width is fixed and the space is changed as shown in FIG. The test mask is exposed with all combinations of the type of the etching device 16 and the type of the exposure device 14 used in production, and further etched, and a correction rule is created from the finished dimensions of the pattern. When a test pattern as shown in FIG. 3 is used, the rule is in the form of a bias value corresponding to a space.

In FIG. 5, (x,
y) represents a combination of (type of exposure apparatus, type of etching apparatus). M × N types of photomasks are created from the optical proximity effect correction data.
At the time of exposure, a wafer to be processed by the exposure device 14 (type 1) and the etching device 16 (type 1)
3 (1, 1), the wafer processed by the exposure device 14 (type 1) and the etching device 16 (type 2) uses the photomask 13 (1, 2), and the exposure device 14 (type M)
The wafer processed by the etching device 16 (type N) is exposed using the photomask 13 (M, N). Here, it is preferable that the photomask 13 has identification information of the corresponding exposure apparatus 14 and etching apparatus 16.

As described above, according to the present embodiment, even when a plurality of exposure apparatuses 14 and a plurality of etching apparatuses 16 are used, the corresponding exposure apparatus 14 and etching apparatus 1 are used.
By using the photomask 13 including a pattern in which the pattern conversion difference generated by the combination of the patterns 6 is corrected, it is possible to reduce the variation in the finished dimension of the pattern.

In this embodiment, the case of performing exposure using a photomask has been described. However, when an integrated circuit pattern is directly drawn by a charged particle beam, pattern data to be drawn is not corrected by proximity effect correction of photomask data. It is clear that the correction is made for

(Embodiment 3) FIG. 6 is a flowchart for explaining a semiconductor manufacturing process according to a third embodiment of the present invention.

It is assumed that one type of CAD data 11 exists after the layout design of a certain integrated circuit product is completed.
The optical proximity effect correction is performed on the CAD data 11.
The situation described below means that when producing this integrated circuit,
Using the exposure apparatus 14 ₁ to 14 _m of the table, using the k stand coater developer 15 ₁ to 15 _k as a resist coating and developing apparatus, and shall use the n-number of the etching apparatus 16 ₁ ~ 16 _n. Before etching . In FIG. 6, the coater / developer 15 is located after the exposure device 14, but it is obvious that coating is performed before exposure and development is performed after exposure.

[0081] Prior to optical proximity effect correction, m stand exposure device 14 ₁ ~14 _m, k stand Kotadebaroppa 15 _1-15
With respect to _k and n etching apparatuses 16 _{1 to} 16 _n , it is checked whether or not the properties regarding the pattern conversion difference are different from each other. The m exposure apparatuses 14 _{1 to} 14 _m and the n etching apparatuses 16 _{1 to} 16 _n are performed by the method described in the first embodiment and the second embodiment, respectively. For k stand coater developer 15 ₁ to 15 _k, performed in the same manner as described in the second embodiment, as a result, are classified on the nature of the pattern conversion difference of the K types (K ≦ k).

Depending on the combination of the exposure device 14, the coater developer 15, and the etching device 16 used in the production, two or more types and up to m × k × n types (in this embodiment, M × K × N types) of proximity effects are used. It is necessary to prepare corrected data and respective photomasks. Hereinafter, this method will be described.

First, a test mask for preparing a correction rule is prepared. This may include, for example, a pattern in which the line width is fixed and the space is changed as shown in FIG. The test mask is exposed with all combinations of the type of the exposure device 14, the type of the coater developer 15, and the type of the etching device 16 used in production, and is further etched to create a correction rule from the finished dimensions of the pattern. When a test pattern as shown in FIG. 3 is used, the rule is in the form of a bias value corresponding to a space.

In FIG. 6, (x,
y, z), which represents a combination of (type of exposure apparatus, type of coater developer, type of etching apparatus). From these optical proximity effect correction data, M × K × N
Create different types of photomasks. At the time of exposure, the exposure device 14 (type 1), the coater developer 15 (type 1),
The wafer to be processed by the etching apparatus 16 (type 1) uses the photomask 13 (1, 1, 1) and the exposure apparatus 14
(Type 1), the wafer processed by the coater developer 15 (Type 1), and the wafer processed by the etching device 16 (Type 2) use the photomask 13 (1, 1, 2), and the exposure device 14 (Type M) and the coater developer 15 (Type K), the wafer processed by the etching apparatus 16 (Type N) is the photomask 1
Exposure is performed using 3 (M, K, N).

Here, as shown in FIG. 7, the photomask 13 has a corresponding exposure apparatus 14 and coater / developer 1
5. It is preferable that identification information of the etching device 16 be provided. For example, E1S2T3 in this figure represents an etching apparatus (type 1), an exposure apparatus (type 2), and a coater developer (type 3). Further, in common with the above three embodiments, the identification information of the device may be a barcode, a character string, or a symbol that can be automatically read, or may be a human-readable character string or a symbol.

In this way, it is possible to prevent the photomask 13 from being misused. Further, if the identification information is set as a mask pattern and is transferred onto the wafer, it is easy to find the cause of the device in which the abnormality has occurred when there is an abnormality in the wafer.

The same applies to the case where a process apparatus other than the above is used. It is further preferable that the information on the process procedure and the process conditions of each apparatus is also included in the photomask. Further, the identification information may be commonly used as a mask pattern, and the identification information may be included in the wafer.

As described above, according to the present embodiment, even when a plurality of exposure apparatuses 14, a plurality of coater developers 15, and a plurality of etching apparatuses 16 are used, the corresponding exposure apparatuses 14, coater developers 15 By using the photomask 13 including a pattern in which the pattern conversion difference generated by the combination of the etching device 16 and the etching device 16 is corrected, it is possible to reduce the variation in the finished dimension of the pattern.

(Embodiment 4) FIG. 8 is a flowchart for explaining a mask data creation method according to a fourth embodiment of the present invention.

The pattern data for one layer to be corrected is input from the CAD data (step 1). Subsequently, a representative pattern among the patterns included in the correction target layer is determined. Typical patterns differ depending on the layer. For example, in a contact hole layer, a contact hole pattern having a minimum size is a typical pattern.

FIG. 9 shows an example of the active region of the DRAM memory cell portion. In this case, it is assumed that the widths of three positions A, B, and C of the active region represent the nature of the pattern conversion difference. Subsequently, the characteristics of the pattern conversion difference are compared using the representative pattern (step 2).

[0092] The situation described below, using a number m of the exposure device 14 ₁ to 14 _m in producing the integrated circuits, k stand coater developer 15 as a resist coating and developing apparatus
With ₁ to 15 _k, and we shall use the n-number of the etching apparatus 16 ₁ ~ 16 _n. Before etching. First relates n number of the etching apparatus 16 ₁ ~ 16 _n, checks the disparate nature or a pattern conversion difference from each other. Exposing a mask including a pattern shown in FIG. 9, respectively etched in n number of the etching apparatus 16 ₁ ~ 16 _n. At this time, to know the difference only in the etching equipment,
It is better to use the same apparatus for the exposure apparatus and the coater developer. The measurement of the finished dimensions is shown in A, B and C in FIG.
Do about points.

FIG. 10 shows an example in which n is 4. FIG.
The horizontal axis of 0 indicates the measurement point, and the vertical axis indicates the bias amount. The bias amount is obtained by subtracting a finished dimension after etching from a target design dimension. Although the permissible range of the variation is shown in the figure, the first and second etching apparatuses use the pattern conversion because the difference between the two finished dimensions falls within the permissible range at the three set measurement points. The properties regarding the difference can be considered the same. Third
In addition, the fourth etching apparatus considers that the property related to the etching conversion difference is different at one or more measurement points because the difference in the finished dimensions from the other etching apparatuses is larger than the allowable range. That is, in this case, the four etching apparatuses are classified into three types of properties relating to the pattern conversion difference.

[0094] For even k stand coater developer 15 ₁ to 15 _k, exposing a mask including a pattern shown in FIG. 9,
After development, the resist dimensions are measured at three locations A, B, and C. At this time, it is better to use the same exposure apparatus in order to know the difference only in the coater developer. Subsequently, a graph similar to that shown in FIG. 10 is created, and it is determined in the same manner as described with reference to FIG. 10 whether the properties of the coater developer regarding the pattern conversion difference are the same or different.

[0095] The number m of the exposure device 14 ₁ to 14 _m also exposes the mask shown in FIG. 9, and developed, A, B, C
The resist dimensions are measured for the three locations. At this time,
It is better for the coater developer to use the same apparatus in order to know the difference only in the exposure apparatus.

In this way, m exposure apparatuses 14 ₁ to 14 ₁
14 _m is M type, k table of the coater developer 15 _1-15
k is K types, and n etching apparatuses 16 _{1 to} 16 _n
Can be classified into N types.

Subsequently, a pattern conversion difference caused by the combination is corrected in accordance with the combination of the types of apparatus to be used (step 3). The subsequent procedure is the same as the procedure described in the third embodiment.

In this embodiment, some measurement points are provided in the memory cell portion as a typical pattern of the DRAM active region. However, in the case of DRAM bit lines and word lines, the memory cell portion is generally provided with a plurality of measurement points. Since it is a line and space pattern, a representative pattern may be a line and space pattern. However, since the periphery of the memory cell is a two-dimensional pattern, a line-an and space pattern and some specific measurement points may be provided in the pattern around the memory cell to be a representative pattern. .

(Embodiment 5) As a fifth embodiment of the present invention, a case where the object to be corrected is a contact hole will be described.

When the object to be corrected is a contact hole layer, the nature of the pattern conversion difference is monitored using the contact hole pattern. FIG. 11 shows an example of a pattern for monitoring the nature of the pattern conversion difference. FIG. 11A shows a layout in which contact holes are arranged vertically and horizontally, and several monitor holes having different distances (X1) from adjacent contact holes are prepared to form a monitor pattern. Alternatively, contact holes arranged in a line as shown in FIG. 11B and having different distances (X2) from adjacent patterns may be used. Alternatively, the contact holes included in the layer to be corrected may be vertically and horizontally shifted, and as shown in FIG. 11C, the distance between the patterns (X3) May be used.

FIG. 12 shows the result of examining the nature of the pattern conversion difference for three exposure apparatuses using the monitor pattern of FIG. 11A. FIG. 12 shows the results obtained under the optical conditions of a contact hole size of 0.2 μm, a numerical aperture of 0.6, a coherence factor of 0.3, and a wavelength of 248 nm. FIG. 11 also shows the results obtained from the monitor pattern of FIG. 11C for a 0.2 μm line and space pattern for reference.

As is apparent from FIG. 12, the characteristics relating to the pattern conversion difference are very different between the contact hole and the line and space. Therefore, if the layer to be corrected is a line-and-space layer, it is desirable to select line and space as a pattern for monitoring the nature of the pattern conversion difference, and if the layer to be corrected is a contact hole, the contact hole pattern is changed. It is preferable to monitor.

In the example shown in FIG. 12, no remarkable difference is observed between the three exposure apparatuses, which is within the range of variation. Therefore,
Even when these three exposure apparatuses are used in parallel, it can be determined that there is only one type of exposure apparatus. Here, the case where the contact hole is the layer to be corrected and three exposure apparatuses are used in parallel has been described, but the same applies to a case where a plurality of etching apparatuses and a plurality of coating / developing apparatuses are used.

(Embodiment 6) FIG. 13 is a flowchart for explaining a mask data creation method according to a sixth embodiment of the present invention.

In the manufacture of an integrated circuit product, it is assumed that the process conditions when using any one of the exposure apparatus, the coater developer, and the etching apparatus are changed (step 1). For example, in the case of an exposure apparatus, the change of the process conditions may be an optical condition (numerical aperture, coherence factor, etc.) of the exposure apparatus itself, a change in a resist material, a change in an antireflection film material, and the like. The process conditions of the coater developer include a change in a film thickness condition, a change in a bake temperature, and the like. Further, as for the etching apparatus, there are a change in etching gas, a change in pressure, a change in temperature, and the like.

In this embodiment, a case where the numerical aperture of the exposure apparatus is changed will be described. The old condition is
It is assumed that a wavelength of 248 nm, NA of 0.5, coherence factor of 0.75, and ／ annular illumination are used, and under the new condition, only NA is changed, and the condition of NA of 0.55 is adopted.

In the pattern shown in FIG. 3, L = 0.2 μm
FIG. 14 shows the result of comparing the old and new conditions. Although this result is obtained from the optical image simulation, an experiment may be actually performed instead of the simulation. In particular, when the conditions in the etching are changed, it is difficult to perform such a simulation, and therefore, it is necessary to obtain the simulation by an experiment. Comparing the old and new conditions in FIG. 14, a difference exceeding the allowable error range is recognized when the space is large. Therefore, it is understood that it is necessary to newly create mask data corrected in accordance with the new optical conditions in accordance with the change of the optical conditions.

(Embodiment 7) Next, a description will be given of a mask data creation apparatus according to a seventh embodiment of the present invention.
FIG. 15 shows a configuration diagram of the present embodiment. The present apparatus is realized by a computer which reads a program recorded on a recording medium such as a magnetic disk and the operation of which is controlled by the program.

This apparatus can be roughly divided into a control section 20, a display section 30, an input section 40, property data 50 on pattern conversion differences between exposure apparatus groups, property data 51 on pattern conversion differences between coating and developing apparatus groups, and an etching apparatus. It is composed of property data 52 relating to the pattern conversion difference between groups and a pattern data storage unit 60.

The property data 50 relating to the pattern conversion difference of the exposure apparatus group includes, for each apparatus, exposure conditions (resist type, resist thickness, numerical aperture, coherence factor, wavelength, dose amount, focus condition, etc.) and the exposure conditions. The pattern conversion difference in the condition is stored. As the pattern conversion difference, for example, data as shown in FIG. 4 may be stored, or a function f satisfying a resist pattern = f (design pattern) may be obtained and stored.

The property data 51 relating to the pattern conversion difference between the coating and developing apparatus group is stored separately from the property data 50 for the exposing apparatus group in FIG. 15, but the exposing apparatus and the coating and developing apparatus are set as a set. In such a case, the property data relating to the pattern conversion difference between the exposure apparatus group and the coating / developing apparatus group may be combined.

The property data 52 relating to the pattern conversion difference of the etching apparatus group includes the etching conditions (gas type, resist type, pressure, temperature, etc.) for each apparatus.
And the pattern conversion difference under the etching condition. As the pattern conversion difference, for example, FIG.
Or a function f that satisfies the post-etch pattern = f (resist pattern) may be obtained and stored.

The control unit 20 first uses means 21 for judging whether the properties relating to the pattern conversion difference are the same or different.
Based on the types of devices used in the actual manufacturing line, with respect to a group of devices used in parallel, it is determined whether the properties related to the pattern conversion difference are the same or different by referring to the property data 50 to 52 related to the pattern conversion difference. Then, if the properties relating to the pattern conversion difference are within a predetermined allowable range, it is determined that they are the same. Then, using the means 22 for creating a mask pattern in which the pattern conversion difference has been corrected, mask data subjected to proximity effect correction is created in a required number by a combination of device types.

With such a configuration, the above-described first to first embodiments
The proximity effect correction of the mask in the sixth embodiment can be performed effectively. In addition, the method described in the above embodiment may be a computer-executable program such as a magnetic disk (floppy disk, hard disk, etc.), an optical disk (CD-RO
M, DVD, etc.), writing to a recording medium such as a semiconductor memory and applying to various devices, and transmitting to a communication medium and applying to various devices. A computer that realizes the present apparatus reads the program recorded on the recording medium, and executes the above-described processing by controlling the operation of the program.

The present invention is not limited to the above embodiments. In the embodiment, a plurality of etching apparatuses are used. However, when the processing speed of the exposure apparatus is higher than that of the etching apparatus, the present invention can be applied to a combination of one etching apparatus and a plurality of exposure apparatuses. Further, the types of the exposure apparatus and the etching apparatus are not limited at all, and can be appropriately changed according to the specifications. In addition, various modifications can be made without departing from the scope of the present invention.

[0116]

As described above in detail, according to the present invention, when mass-producing an LSI using a plurality of exposure apparatuses, etching apparatuses, and the like, the pattern conversion difference of each apparatus is corrected by a photomask. It is possible to form a pattern with high accuracy without variation between substrates to be processed, and to improve a manufacturing yield.

[Brief description of the drawings]

FIG. 1 is a view showing a processing flow of a conventional semiconductor device manufacturing process.

FIG. 2 is a view showing a processing flow of a manufacturing process of the semiconductor device according to the first embodiment;

FIG. 3 is a diagram showing an example of a mask pattern used to determine whether the properties regarding the pattern conversion difference of each device are the same or different.

FIG. 4 is a diagram showing an example of a graph used to determine whether the properties regarding the pattern conversion difference of each device are the same or different.

FIG. 5 is a view showing a processing flow of a manufacturing process of the semiconductor device according to the second embodiment;

FIG. 6 is a view showing a processing flow of a semiconductor manufacturing process according to the third embodiment.

FIG. 7 is a diagram showing an example of identification information formed on a photomask.

FIG. 8 is a view showing a processing flow of a semiconductor manufacturing process according to a fourth embodiment.

FIG. 9 is a diagram showing a part for monitoring the nature of a pattern conversion difference in an active region layer of a DRAM memory cell part.

FIG. 10 is a diagram illustrating an example of a graph used to determine whether the properties regarding the pattern conversion difference of each device are the same or different.

FIG. 11 is a diagram showing an example of a pattern for monitoring the nature of a pattern conversion difference.

FIG. 12 is a view showing the result of examining the properties of a pattern conversion difference for three exposure apparatuses.

FIG. 13 is a view showing a processing flow of a manufacturing process of the semiconductor device according to the fifth embodiment;

FIG. 14 illustrates a case where optical conditions in an exposure apparatus are different.
The figure which shows the example of the graph used when judging whether the property regarding a pattern conversion difference is the same or different.

FIG. 15 is a block diagram showing a configuration of a mask data creation device according to a sixth embodiment.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 11 ... CAD data 12 ... Proximity effect correction data 13 ... Photo mask 14 ... Exposure device 15 ... Coater developer 16 ... Etching device 20 ... Control unit 21 ... Means for judging whether the property regarding a pattern conversion difference is the same or different 22 ... Pattern conversion Means for creating a mask pattern corrected for the difference 30 Display unit 40 Input unit 50 Property data on pattern conversion difference of exposure apparatus group 51 Property data on pattern conversion difference of coating / developing apparatus group 52 Etching apparatus group Property data relating to the pattern conversion difference 53: Pattern data storage

 ──────────────────────────────────────────────────続 き Continuing from the front page (72) Inventor Soichi Inoue 8 Shinsugita-cho, Isogo-ku, Yokohama-shi, Kanagawa Prefecture Inside the Toshiba Yokohama Office (72) Inventor Shigeki Nojima 8 Shinsugita-cho, Isogo-ku, Yokohama-shi, Kanagawa Company Toshiba Yokohama Office

Claims (14)

[Claims] In a method of manufacturing a semiconductor device for forming a desired integrated circuit pattern by exposing and etching a pattern on a substrate to be processed, n (n is 2 or more) etching apparatuses are used in parallel. When the same integrated circuit pattern is formed on a plurality of substrates to be processed, two or more types and up to n types of photomasks are prepared corresponding to the etching apparatus to be used, and the etching masks corresponding to the respective photomasks are prepared. A method for manufacturing a semiconductor device, comprising forming a pattern in which a pattern conversion difference generated by the device has been corrected. 2. A method of manufacturing a semiconductor device for forming a desired integrated circuit pattern by exposing and etching a pattern on a substrate to be processed, wherein m exposure apparatuses and n etching apparatuses are connected in parallel. (At least one of m and n is 2 or more), and when forming the same integrated circuit pattern on a plurality of substrates to be processed, a combination of an exposure apparatus and an etching apparatus used for one substrate to be processed In this case, two or more types of photomasks of a maximum of m × n types are prepared, and a pattern in which a pattern conversion difference caused by a combination of the corresponding exposure apparatus and etching apparatus is corrected is formed on each photomask. A method for manufacturing a semiconductor device, comprising: 3. A method for manufacturing a semiconductor device for forming a desired integrated circuit pattern by exposing and etching a pattern on a substrate to be processed, comprising: m exposure apparatuses, k application / development apparatuses, and n When one etching apparatus is used in parallel (at least one of k, m, and n is two or more) to form the same integrated circuit pattern on a plurality of substrates, Up to k × m with two or more types corresponding to the combination of the exposure equipment, coating / development equipment and etching equipment used
Xn types of photomasks are prepared, and a pattern is formed on each photomask in which a pattern conversion difference caused by a combination of a corresponding exposure apparatus, coating / development apparatus, and etching apparatus is corrected. A method for manufacturing a semiconductor device. 4. A determination is made as to whether the properties with respect to the pattern conversion difference are the same or different for the same type of apparatus among the apparatuses for forming the pattern, and the apparatus determined as having the same property with respect to the pattern conversion difference is the same. 4. The method for manufacturing a semiconductor device according to claim 1, wherein a corresponding type of photomask is used. 5. When the process conditions in the exposure apparatus, the coating / developing apparatus or the etching apparatus are changed, in the apparatus in which the process conditions are changed, whether the nature of the pattern conversion difference before and after changing the process conditions is the same or different. 4. The method according to claim 1, wherein an old photomask is used if the difference between the old and new conditions is within a predetermined allowable range, and a correction mask under the new condition is used if the difference is not within the allowable range. 13. A method for manufacturing a semiconductor device according to 6. A method for judging whether the properties relating to the pattern conversion difference are the same or different for each of the exposure apparatus and the coating / developing apparatus, comprises: exposing and developing a mask pattern including a line-and-space pattern; 6. The pattern according to claim 4, wherein the length of the pattern is measured, and if the difference due to the apparatus or process conditions is within a predetermined allowable range, the properties are regarded as the same, and if the difference is larger than the allowable range, the properties are regarded as different. A method for manufacturing a semiconductor device. 7. A method of judging whether the properties relating to the pattern conversion difference of the etching apparatus are the same or different is performed by exposing and etching a mask pattern including a line-and-space pattern, and finishing the pattern formed on the substrate to be processed. 6. The semiconductor device according to claim 4, wherein the dimensions are measured, and if the difference due to the apparatus or process conditions is within a predetermined allowable range, the properties are regarded as the same, and if the difference is larger than the allowable range, the properties are regarded as different. Manufacturing method. 8. A method for judging whether the properties relating to the pattern conversion difference are the same or different for each of the exposure apparatus and the coating / developing apparatus, comprises: exposing and developing a mask pattern including a contact hole pattern; 6. The semiconductor according to claim 4, wherein the length of the semiconductor device is measured, and if the difference due to the apparatus or process conditions is within a predetermined allowable range, the properties are regarded as the same, and if the difference is larger than the allowable range, the properties are regarded as different. Device manufacturing method. 9. A method of determining whether the properties of the etching apparatus relating to a pattern conversion difference are the same or different is performed by exposing and etching a mask pattern including a contact hole-shaped pattern, and finishing the pattern formed on the substrate to be processed. 6. The semiconductor device according to claim 4, wherein if the difference due to the device or process conditions is within a predetermined allowable range, the properties are regarded as the same, and if the difference is larger than the allowable range, the properties are regarded as different. Production method. 10. A determination as to whether the properties relating to the pattern conversion difference are the same or different for each of the exposure apparatus and the coating / developing apparatus is performed after exposing and developing a representative pattern included in the photomask to be corrected. And measuring the length of the resist pattern. If the difference due to the apparatus or process conditions is within a predetermined allowable range, the properties are regarded as the same, and if the difference is larger than the allowable range, the properties are regarded as different. The manufacturing method of the semiconductor device described in the above. 11. A method of judging whether or not properties of the etching apparatus relating to a pattern conversion difference are the same or different is performed by exposing and etching a representative pattern included in a photomask to be corrected and forming a pattern formed on a substrate to be processed. 6. The length according to claim 4, wherein when the difference due to the apparatus or process conditions is within a predetermined allowable range, the properties are regarded as the same, and when the difference is larger than the allowable range, the properties are regarded as different. A method for manufacturing a semiconductor device. 12. A photomask data generating apparatus used to form a desired integrated circuit pattern by exposing and etching a pattern on a substrate to be processed, comprising: an exposure apparatus group, a coating / developing apparatus group, and an etching apparatus group. Means for storing a property related to the pattern conversion difference with respect to
A mask pattern that corrects a pattern conversion difference caused by a combination of a means for assuming that the property is the same if the difference between the properties of the pattern conversion difference is within a predetermined allowable range and different if the difference is larger than the allowable range, and a semiconductor manufacturing apparatus to be used. And a means for creating a photomask. 13. A program for creating, by a computer, data of a photomask used for forming an integrated circuit pattern, the program comprising: a property relating to a pattern conversion difference between an exposure apparatus group, a coating / developing apparatus group, and an etching apparatus group. A step of inputting data, a step of determining that the properties are the same if the pattern conversion difference is within a predetermined allowable range based on the input property data, and a step of determining that the properties are different if the difference is larger than the allowable range; A computer-readable recording medium storing a program for executing a procedure of creating a mask pattern in which a pattern conversion difference caused by a combination of semiconductor manufacturing apparatuses used based on the obtained information is corrected. 14. A program for forming a desired integrated circuit pattern by exposing and etching a pattern on a substrate to be processed, wherein at least two types and at most n types of photos are used in accordance with an etching apparatus to be used. A mask is prepared, and a pattern in which a pattern conversion difference generated by a corresponding etching device is corrected is formed on each photomask, and n (n is 2 or more) etching devices are used in parallel and the same. A computer-readable recording medium storing a program for controlling a computer to select an optimal photomask corresponding to each etching apparatus when forming the integrated circuit pattern on a plurality of substrates to be processed.