JPH10275308A - Thin film head and its production - Google Patents

Abstract

PROBLEM TO BE SOLVED: To attain strong adhesion of a thin film head to a constituting member and excellent durability thereof. SOLUTION: The head has a protective film 1 at least on a surface facing to a recording medium and the protective film 1 has a composition expressed by formula:SiCx HYOZNV (in which X, Y, Z and W denote atomic ratio and X=3 to 26, Y=0.5 to 13, Z=0.5 to 6, W=0 to 6). In this case, the protective film 1 is film-formed by applying negative bias voltage thereon.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to various thin-film magnetic heads such as an induction type magnetic head, a magnetoresistive effect type magnetic head (MR head), and an MR induction type composite head having an induction type head unit and an MR element unit. And its manufacturing method.

[0002]

2. Description of the Related Art In recent years, the density of magnetic recording has been increased. Along with this, the development of thin-film magnetic heads that use a soft magnetic thin film as the magnetic pole and MR heads that perform recording with an inductive head and perform reproduction using the magnetoresistance effect as hard disk heads has been actively pursued. ing.

An MR head reads an external magnetic signal by a change in resistance of a read sensor using a magnetic material. The MR head has a feature that a high output can be obtained even in magnetic recording with a high linear recording density because the reproduction output does not depend on the relative speed to the recording medium. M
The R head is usually configured to have a magnetoresistive film (MR film) sandwiched between a pair of magnetic shield films (shield type MR head) in order to increase resolution and obtain good high frequency characteristics. In this case, since the MR head is a reproducing head,
Usually, an MR induction type composite head in which an induction type head for recording is integrated with an MR head is used.

In general, a thin film head is floated on a recording medium by the action of air bearing, and a CSS (Contact
(Start Stop) system is often used, and is usually held on a magnetic disk rotating at a high speed with a very small flying height of about 0.2 to 2.0 μm. For this reason, surface strength and abrasion resistance to withstand head crash and CSS wear become problems. Various attempts have been made to improve the abrasion resistance. For example, as described in Japanese Patent Application Laid-Open No. Hei 4-27667, a technique of providing a protective film on a rail of a magnetic head slider is known. However, the protective film is made of silicon having a thickness of 250 angstroms or less and has insufficient strength. In addition, when such a silicon film is provided on a structure such as a sintered substrate of alumina and titanium carbide, an alumina insulating layer, a soft magnetic thin film such as permalloy, sendust, and iron nitride, which constitute a magnetic thin film head, Due to insufficient adhesion or adhesion between the head and the protective film, there have been problems such as peeling and insufficient abrasion resistance.

As a protective layer for improving abrasion resistance,
TiN, TiCN, diamond-like carbon thin film (DL
C) and the like are known. However, even if these are used for a thin film magnetic head, they are insufficient in durability.

[0006] For example, Japanese Patent No. 2571957 describes that a buffer layer of amorphous silicon or amorphous silicon carbide is provided on an oxide surface, and a carbon or a film containing carbon as a main component is provided thereon. ing. However, even if such a protective layer provided with a buffer layer is applied to a thin film head, it is still insufficient in durability. In addition, a buffer layer forming step is required in addition to the step of providing a protective film, which increases the manufacturing time and manufacturing cost and increases the film thickness. Therefore, there is a demand for cost reduction, mass productivity, and an increase in recording density. This is extremely disadvantageous in the field of magnetic heads for hard disks, which are becoming increasingly larger.

[0007]

SUMMARY OF THE INVENTION It is an object of the present invention to provide a thin-film head having a strong adhesion to a component member of the thin-film head and excellent in durability, and a method of manufacturing the same.

Another object of the present invention is to provide an inexpensive thin film head which can be further thinned, has a small number of manufacturing steps, and is inexpensive.

[0009]

This object is achieved by any one of the following constitutions (1) to (10). (1) at least a protective film on the opposite surface of the recording medium, X in the protective layer has the formula _{(I) SiC X H Y O} Z N W [In formula (I), Y, Z and W atomic ratio X = 3 to 26 Y = 0.5 to 13 Z = 0.5 to 6 W = 0 to 6]. (2) The thin-film head according to (1), wherein an end surface of the oxide base material, the oxide insulating layer, and the soft magnetic metal layer exists on the facing surface. (3) The thin film head according to the above (1) or (2), which has an inductive head portion or has an inductive head portion and an MR element portion. (4) a negative bias voltage to the thin film head is applied, the formula _{(I) SiC X H Y N} Z O W [X in the above formula (I), Y, Z and W represent atomic ratios, X =. 3 to 26 Y = 0.5 to 13 Z = 0.5 to 6 W = 0 to 6]
A method of manufacturing a thin film head for forming a vapor phase film at least on a surface facing a recording medium. (5) The method for manufacturing a thin film head according to (4), wherein the bias voltage is applied by a self-bias generated by an applied DC power supply or an applied high-frequency power. (6) The method of manufacturing a thin film head according to the above (4) or (5), wherein the protective film is formed by a plasma CVD method. (7) The method of manufacturing a thin film head according to the above (4) or (5), wherein the protective film is formed by an ionization vapor deposition method. (8) The method of manufacturing a thin film head according to the above (4) or (5), wherein the protective film is formed by a sputtering method. (9) the opposing surface is an oxide base material, an oxide insulating layer,
The method for manufacturing a thin film head according to any one of the above (4) to (8), comprising an interlayer thin film and a soft magnetic metal layer. (10) The method of manufacturing a thin film head according to any one of the above (4) to (9), having an inductive head portion or having an inductive head portion and an MR element portion.

[0010]

According to the present invention, a protective film containing Si + C + H + O having a predetermined composition ratio or N is formed on at least a recording medium facing surface of a thin film head, that is, a floating surface or a sliding surface. This protective film can be formed by applying a DC bias voltage or a self-bias to the thin-film magnetic head, and by a plasma CVD method, an ionized vapor deposition method, a sputtering method, or the like.

The protective film thus formed is made of Ti
Excellent in durability and abrasion resistance as compared with those using N, TiCN, and thin film head of alumina, permalloy, sendust etc. as compared with diamond-like thin film (DLC) or the one with buffer layer interposed therebetween It has high adhesion to the component members, improves durability, and extends the life of the thin film head itself. In addition, since there is no need to provide an intermediate layer or a buffer layer, the overall thickness of the protective film is reduced, so that cost and production efficiency can be reduced, the protective film can be further thinned, and the recording density can be improved. Can be achieved.

[0012]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a specific structure of a thin film head according to the present invention will be described in detail.

The thin-film head of the present invention has a protective film at least on the surface facing the recording medium. The composition of the protective film is represented by the formula _{(I) SiC X H Y O} Z N W. In the above formula (I), X, Y,
Z and W represent atomic ratios, X = 3-26, Y = 0.5
-13, Z = 0.5-6, W = 0-6. Also,
Preferably X = 1-8 Y = 1-4 Z = 0.5-4, especially 0.5-2 W = 0-4, especially 0-2. Among them, particularly preferably, Z + W = 0.5 to
4, especially 0.5 to 3.

When X is less than 3, the film hardness is weak and insufficient, and when X exceeds 26, the internal stress of the film becomes large and the adhesion becomes weak. When Y is less than 0.5, the film hardness is weak and insufficient, and when Y exceeds 13, the film hardness is insufficient. Further, when Z is less than 0.5, the film strength is weak, the film is easily damaged, and the durability is insufficient.
When Z and W exceed 6, the film density and abrasion resistance decrease.

In addition to the above main components, at least one element such as S, B or P may be contained in an amount of 3 wt% or less. Further, such a protective film is in an amorphous state, and its thickness is preferably 1 to 50 nm, particularly preferably 2 to 20 nm. When the film thickness is less than 1 nm, the effect of the present invention is reduced. When the film thickness is more than 50 nm, the gap with the recording medium increases, and the characteristics deteriorate. Usually, the Vickers hardness of this protective film is about Hv = 600 to 400, and the wavelength is 632 nm.
Is about 1.5 to 2.8.

Next, the thin film head of the present invention will be described.

FIG. 1 is a schematic sectional view showing an example of the structure of a thin film head according to the present invention. The thin film head in the illustrated example is
Protective film 1 of the present invention, protective layer 2, upper pole layer 3, gap 4, lower pole layer 5, insulating layer 6, upper shield layer 7, M
It has an R element 8, a lower shield 9, a base layer 10, a base 11, a coil 12, and an insulating layer 13.

The thin film head in the illustrated example has an MR head for reproduction and an inductive head for recording.
It is an induction type composite head. Here, the inductive head for recording is composed of the upper magnetic pole layer 3 and the lower magnetic pole layer 5, and the gap 4 and the coil 12 sandwiched between them. M
The R head portion includes an upper shield layer 7 and a lower shield layer 9, and an insulating layer 13 and an MR element 8 interposed therebetween. In the illustrated example, the induction type head is on the so-called trailing side, and the MR head is on the leading side.

Normally, the protective layer 2 is made of a nonmagnetic material such as alumina, the upper and lower magnetic pole layers 3 and 5 are made of a soft magnetic material such as permalloy, and the upper and lower shield layers 7 and 9 are made of permalloy, sendust, and the like. A soft magnetic material such as iron nitride is used, and a non-magnetic material such as alumina is used for the underlayer 10.

For the MR element, besides permalloy or a Ni--Co alloy, various materials having a magnetoresistance effect can be used. Some of these can lower the heat treatment temperature and are particularly suitable when the MR element film has a multilayer structure. As the MR film having a multilayer structure, for example, a spin valve type artificial lattice multilayer film (NiFe / Cu / NiFe / F)
eMn, Co / Cu / Co / FeMn), an antiferromagnetic artificial lattice multilayer film (NiFe / Ag, Co / Ag, etc.).

It is preferable to use a material that does not diffuse into the MR film, such as Ta or W, for the leads connected to the MR element. For the insulating layers 6 and 13, a normal insulating material such as various ceramics such as Al ₂ O ₃ and SiO ₂ can be used. The base 11 made of AlTiC (a sintered body of alumina and titanium carbide) or the like is usually fixed to the slider of the magnetic head, but the base 11 itself may be used as the slider.

Then, at least the running surface or the sliding surface of the thin film head element body on which these structures are stacked, that is, the surface facing the magnetic recording medium (magnetic disk) (the surface perpendicular to the left paper surface in the figure). Then, the protective film 1 of the present invention is formed. The protective film 1 may be provided on at least the running surface or the sliding surface of the thin film head element, and it is not necessary to provide a protective film on other portions of the thin film head. It does not preclude the provision of a protective film on other portions from the viewpoint of, for example, attaching a protective film to other portions or improving the strength of the entire thin film head depending on conditions such as a method of manufacturing the thin film head.

The dimensions of each part are not particularly limited, and may be appropriately determined according to the configuration of the magnetic recording medium to be combined. However, usually, the shield layers 7 and 9 have a thickness of 1 to 5 μm and a width of 3 μm.
0 to 200 μm, MR element (magnetoresistive film) 8 has a thickness of 5 to 60 nm, width of 1 to 10 μm, and shield layers 7, 9 and MR
The distance from the element 8 is 0.03 to 1.0 μm, the pole layers 3 and 5 of the induction type head are 1 to 5 μm in thickness and 0.5 to 10 μm in width.
m, the distance between the shield layer 7 on the trailing side and the lower magnetic pole 5 of the induction type head is 0.2 to 5 μm.

In the magnetic head of the present invention, the method for linearly operating the MR element is not particularly limited.
It can be appropriately selected from various methods such as a hard film bias method, a soft film bias method, and a shape bias method.

The magnetic head of the present invention is usually manufactured by forming a thin film and forming a pattern. For the formation of each film,
A vapor deposition method such as a sputtering method or a vacuum evaporation method, a plating method, or the like may be used. Pattern formation can be performed by selective etching, selective deposition, or the like.

The thin-film head according to the present invention is not limited to the above-described example, but can be applied to thin-film heads having other structures. For example, the lower magnetic pole and the upper shield can be shared, or an inductive type head without using an MR element can be used. A head-only configuration (hereinafter referred to as M
A device using an R element may be referred to as an MR thin film head, and a device using only an inductive head may be referred to as an inductive thin film head. Particularly preferably, a sintered body of alumina and titanium carbide, alumina,
The effect of the present invention can be preferably obtained with a thin film head using a composite material having at least one of permalloy, sendust or iron nitride.

The magnetic head of the present invention is used in combination with a conventionally known assembly such as an arm.

Next, a method of manufacturing the thin film head will be described.
In the present invention, the protective film is preferably formed by a plasma CVD method. The plasma CVD method is described in, for example, JP-A-4-41672. Plasma in the plasma CVD method may be either direct current or alternating current, but it is preferable to use alternating current. The alternating current can be from a few hertz to a microwave. Further, ECR plasma described in diamond thin film technology (published by General Technology Center) can also be used.

In the present invention, it is preferable to use a bias-applied plasma CVD method as the plasma CVD method. In the bias applying plasma CVD method, a negative bias voltage is applied to the thin film head. For this method, for example,
M. Nakayama et al, Journal of the Ceramic Society o
f Japan Int. Edition Vol 98 607-609 (1990). Alternatively, a self-bias may be used without applying a bias voltage. When a plasma power supply, which is an AC power supply, is connected to the electrodes of the device, plasma is generated. This plasma contains electrons, ions, and radicals, and is neutral as a whole. However, when the frequency of the plasma power supply is an audio wave (AF), a high frequency (RF), or a microwave (MW), there is a difference in the mobility between ions and electrons. This produces a negative voltage condition. This is called a self-bias voltage. The above bias voltage is preferably −10 to −2000 V
And more preferably -50 to -1000V.

When the protective film is formed by the plasma CVD method, it is preferable to use a compound belonging to the following group as a source gas. That is, Si + C + H + O
As a single compound to obtain the composition of, tetramethoxysilane, tetraethoxysilane, octamethylcyclotetrasiloxane, hexamethylcyclosiloxane, hexamethoxydisiloxane, hexaethoxydisiloxane, triethoxyvinylsilane, dimethylethoxyvinylsilane, trimethoxyvinylsilane, Examples include methyltrimethoxysilane, dimethoxymethylchlorosilane, dimethoxymethylsilane, trimethoxysilane, dimethylethoxysilane, trimethoxysilanol, hydroxymethyltrimethylsilane, methoxytrimethylsilane, dimethoxydimethylsilane, ethoxytrimethoxysilane, and the like. These may be used in combination, and another compound may be used in combination.

In order to obtain the composition of Si + C + H + O + N, in addition to the above-mentioned source gas, N, N ₂ N + H, NH ₃ or the like as N source, NO, N as N + O source are used.
A compound of N and O, such as O ₂ and N ₂ O, which can be represented by NO _x may be used.

In addition, Si + C + H, Si + C + H + O
Alternatively, a compound containing Si + C + H + N may be combined with an O source, an ON source, an N source, or the like, and O ₂ or O ₃ may be used as an O source, and CH ₄ or C may be used as a C + H source.
_{2 H 4, C 2 H 6} , C 3 H 8, may be used hydrocarbons such as C ₆ H _6.

Compounds containing Si, C and H include:
Methylsilane, dimethylsilane, trimethylsilane, tetramethylsilane, diethylsilane, tetraethylsilane, tetrabutylsilane, dimethyldiethylsilane, tetraphenylsilane, methyltriphenylsilane, dimethyldiphenylsilane, trimethylphenylsilane, trimethylsilyl-trimethylsilane, trimethylsilylmethyl -Trimethylsilane and the like, and compounds having Si, C, H and N include 3-aminopropyldiethoxymethylsilane, 2-cyanoethyltriethoxysilane, 3-allylaminopropyltrimethoxysilane,
3-aminopropyltriethoxysilane and the like. These may be used in combination, or a silane compound and a hydrocarbon may be used.

The flow rate of the source gas may be determined as appropriate according to the type of the source gas. Operating pressure is usually 0.01 ~
0.5 Torr, and the input power are usually preferably about 10 W to 5 KW.

In the present invention, it is preferable that the protective film is formed by ionization vapor deposition. The ionization deposition method is described in, for example, JP-A-58-174507 and JP-A-59-174.
No. 508, etc. However, the present invention is not limited to the methods and apparatuses disclosed therein, and another type of ion vapor deposition technology may be used as long as the ionization gas for the material of the protective film can be accelerated.

As a preferable example of the device in this case, for example, an ion straight type or ion deflection type described in Japanese Utility Model Laid-Open No. 59-174507 can be used.

In the ionization deposition method, the inside of the vacuum vessel is set to a high vacuum of about 10 ^-6 Torr. A filament that is heated by an AC power supply to generate thermoelectrons is provided in the vacuum vessel. A counter electrode is arranged so as to surround the filament, and a voltage Vd is applied between the filament and the filament. In addition, an electromagnetic coil that surrounds the filament and the counter electrode and generates a magnetic field for trapping ionized gas is arranged. The source gas collides with the thermoelectrons from the filament to generate positive thermal decomposition ions and electrons, and the positive ions are accelerated by the negative potential Va applied to the grid. The composition and film quality can be changed by adjusting Vd, Va and the magnetic field of the coil. In the present invention, Vd = 10 to 500 V, Va = −10 to −500 V
The degree is preferred. As described above, a negative bias voltage is applied to the bias applied to the thin film head. The bias voltage is preferably a direct current. Alternatively, a self-bias may be used without applying a bias voltage. The bias voltage is preferably −10 to −2000 V, more preferably −50 to −1000 V, as described above.

When the protective film is formed by the ionization vapor deposition method, the same material gas as in the plasma CVD method may be used. The flow rate of the source gas may be appropriately determined according to the type. Operating pressure is typically 0.01-0.5
Torr is preferred.

In the present invention, it is preferable that the protective film is formed by a sputtering method. That is, in addition to sputtering gas such as Ar and Kr, O ₂ , N ₂ , NH
₃ , while introducing a gas such as H ₂ as a reactive gas,
C, Si, SiO ₂ , Si ₃ N ₄ , SiC, etc. may be targeted, or C, Si, SiO ₂ , Si ₃ N ₄ , SiC
Or, in some cases,
Two or more targets including C, Si, N, and O may be used. Further, a polymer can be used as a target. A high-frequency power is applied using such a target, the target is sputtered, and the target is sputter-deposited on a thin-film head mounted on a substrate to form a protective film. In this case, a negative bias voltage is applied to the substrate or the thin film head. The bias voltage is preferably a direct current. Alternatively, a self-bias may be used without applying a bias voltage. The bias voltage is preferably -10 to -2000 V,
More preferably, it is -50 to -1000V. The high frequency sputtering power is usually about 50 W to 2 KW. The operating pressure is usually preferably 10 ⁻⁵ to 10 ⁻³ Torr.

[0040]

EXAMPLES Hereinafter, the present invention will be described in more detail by showing specific examples of the present invention.

(Example 1) Plasma CVD (1) Si (OCH ₃ ) ₄ and CH ₄ were used as source gases of a compound containing Si, C, H and O at a flow rate of 5 SCCM and 10 SCCM, respectively. Introduced. RF500W is applied as an alternating current for plasma generation, operating pressure is 0.05 Torr.
Then, a 70 angstrom film was formed on the running surface or sliding surface of the induction thin film head at a self bias of -400 V.

(2) As a source gas for the compound containing Si, C, H and O, Si (OCH ₃ ) ₄ and CH ₄ were introduced at a flow rate of 5 SCCM and 6 SCCM, respectively. An RF of 500 W was applied as an alternating current for plasma generation, and an operating pressure of 0.
At 70 Å, a film was formed on the running surface or sliding surface of the induction thin film head at 05 Torr at a self-bias of -350 V.

(3) SiH ₄ , CO ₂ , and CH ₄ are used as source gases of a compound containing Si, C, H, and O;
The flow was introduced at 20 SCCM, 10 SCCM, and 50 SCCM, respectively. RF 500 W is applied as an alternating current for plasma generation, and the operating pressure is 0.05 Torr.
A 0 angstrom film was formed.

(4) Si (OC ₂ H ₅ ) ₄ was used as a source gas for the compound containing Si, C, H and O at a flow rate of ₅ SCC.
M introduced. RF50 as AC for plasma generation
0 W and an operating pressure of 0.05 Torr, the self-bias -400 is applied to the running surface or sliding surface of the induction thin film head.
V was formed to a thickness of 70 Å.

(5) Si (OC ₂ H ₅ ) ₄ and C ₂ H ₄ were introduced as source gases of the compound containing Si, C, H and O at flow rates of 5 SCCM and 5 SCCM, respectively. An RF of 500 W was applied as an alternating current for plasma generation, and an operating pressure of 0.05 Torr was applied to form a 70 Å film at a self-bias of −400 V on the running surface or sliding surface of the induction thin film head.

(6) Si (OCH ₃ ) ₄ was introduced at a flow rate of 5 SCCM as a source gas of a compound containing Si, C, H and O. RF500W as AC for plasma generation
At an operating pressure of 0.05 Torr, and a film of 70 Å was formed on the running surface or sliding surface of the induction thin film head at a self-bias of −400 V.

(7) In (1), the raw material gas is Si,
C, H, O and N, that is, Si
(OCH ₃ ) ₄ at flow rate 5 SCCM, NO ₂ at flow rate 5 SCCM, CH ₄
At a flow rate of 3 SCCM.

(8) In (5), the self bias-200 V is applied to the running surface or the sliding surface of the MR thin film head.
To form a 70 angstrom film.

(9) In (5), sendust (Fe: 85%, Al: 5) which is a material of the MR thin film head is used.
%, Si: 10%), Permalloy (Ni: 80%, F
e: 20%), and a 70 Å-thick SiCHO film of the present invention was formed under the same conditions on a substrate of Altic and Al ₂ O ₃ .

(10) As a comparative example, CH ₄ was used as a raw material gas.
Was introduced at a flow rate of 10 SCCM, and under the same conditions as (1), a DLC film was formed on the running surface or sliding surface of the induction thin film head at 70 Å.

(11) As a comparative example, CH ₄ was used as a raw material gas.
And a flow rate of 10 SCCM, and under the same conditions as (1), sendust (F
e: A 70 Å DLC film was formed on an 85% substrate.

The adhesive strength of each sample thus obtained was evaluated by a scratch test shown below, and the results are shown in Table 1 together with Vickers hardness. The composition of the formed film measured by chemical analysis is also shown.

[Scratch Test] A scratch tester SRC-02 manufactured by RHESCA was used. The diamond indenter at this time was 100 μm.

Further, the dielectric breakdown voltages of the inductive thin film head and the MR thin film head after 50,000 times of the CSS test are shown. The higher the dielectric breakdown voltage, the higher the CSS durability.

[0055]

[Table 1]

From the results shown in Table 1, the scratch force,
It can be seen that the thin film head of the present invention is excellent in both the dielectric breakdown voltage.

(Example 2) Ionization deposition method (21) Si (O) was used as a source gas of Si + C + H + O.
CH ₃ ) ₄ was introduced at a flow rate of 5 SCCM, and CH ₄ was introduced at a flow rate of 6 SCCM. Va = −80 V, Vd = + 40 at an operating pressure of 0.1 Torr
V was applied to form a 70 Å film at a bias of −500 V on the running surface or sliding surface of the MR thin film head.

(22) Si (OCH ₃ ) ₄ was introduced as a source gas of Si + C + H + O at a flow rate of 5 SCCM. Va = −80 V and Vd = + 40 V were applied at an operating pressure of 0.1 Torr, and a 70 angstrom film was formed at a bias of −500 V on the running surface or sliding surface of the MR thin film head.

(23) Si (OC ₂ H ₅ ) ₄ as a raw material gas of Si + C + H + O at a flow rate of ₅ SCCM and C ₂ H ₄ at a flow rate of 5 S
Introduced by CCM. Va = −80 at operating pressure of 0.1 Torr
V and Vd = + 40 V were applied, and a 70 angstrom film was formed on the running surface or sliding surface of the MR thin film head at a bias of -500 V.

(24) Si (OC ₂ H ₅ ) ₄ as a source gas of Si + C + H + O at a flow rate of ₅ SCCM and C ₂ H ₄ at a flow rate of 1 S
Introduced by CCM. Va = −80 at operating pressure of 0.1 Torr
V and Vd = + 40 V were applied, and a 70 Å film was formed on the running surface or sliding surface of the MR thin film head at a bias of −400 V.

(25) As a source gas of Si + C + H + O + N, Si (OCH ₃ ) ₄ was introduced at a flow rate of 5 SCCM, NO ₂ was introduced at a flow rate of 5 SCCM, and CH ₄ was introduced at a flow rate of ₄ SCCM. Operating pressure
At 1 Torr, Va = −80V and Vd = + 40V are applied, and MR
A bias-500 is applied to the running or sliding surface of the thin film head.
V was formed to a thickness of 70 Å.

(26) As a comparative example, CH ₄ was used as a raw material gas.
Was introduced at a flow rate of 10 SCCM, and the other conditions were the same as in (21), and a DLC film was formed on the running surface or sliding surface of the MR thin film head at 70 Å.

The adhesion of each sample thus obtained was evaluated by a scratch test, and the results are shown in Table 2 together with the Vickers hardness. The composition of the formed film measured by chemical analysis is also shown.

[0064]

[Table 2]

From the results shown in Table 2, it is understood that the thin film head of the present invention is excellent in both the scratch force and the durability.

(Example 3) Sputtering method (31) Using O ₂ + H ₂ as a reactive gas,
Was targeted. At an operating pressure of 10 ⁻³ Torr, a high frequency sputtering power of 500 W was applied, and a 70 Å film was formed on the running surface or sliding surface of the MR thin film head at a self-bias of −150 V.

(32) O ₂ + N ₂ + as reactive gas
Using the H _2, it was the SiC target. Operating pressure 10 ^-3
500W as high frequency sputtering power at Torr, MR
Self-biasing on the running surface or sliding surface of the thin film head
A 70 Å film was formed at 150 V.

[0068]

As described above, according to the present invention, it is possible to realize a thin-film head which has a strong adhesion to alumina, permalloy, sendust or iron nitride, has excellent durability, and a method of manufacturing the same. It is possible to realize an inexpensive thin-film head with a small number of manufacturing steps and a manufacturing method thereof.

[Brief description of the drawings]

FIG. 1 is a schematic sectional view showing a configuration example of a thin film head (MR thin film head) of the present invention.

[Description of Signs] 1 Protective film 2 Protective layer 3 Upper magnetic pole layer 4 Gap 5 Lower magnetic pole layer 6 Insulating layer 7 Upper shield layer 8 MR element 9 Lower shield layer 10 Underlayer 11 Base material 12 Coil 13 Insulating layer

Claims (10)

[Claims] [Claim 1 further comprising a protective film on the opposite surfaces of the at least a recording medium, X the protective film has the formula _{(I) SiC X H Y O} Z N W [In the above formula (I), Y, Z and W are X = 3 to 26, Y = 0.5 to 13 and Z = 0.5 to 6 W = 0 to 6]. 2. The thin-film head according to claim 1, wherein end faces of an oxide base material, an oxide insulating layer and a soft magnetic metal layer are present on the facing surface. 3. The thin-film head according to claim 1, which has an inductive head portion or has an inductive head portion and an MR element portion. 4. A negative bias voltage is applied to the thin film head, and a formula (I) SiC _X H _Y N _Z O _W [X, Y, Z and W in the above formula (I) represent atomic ratios, and X = 3 to 26 Y = 0.5 to 13 Z = 0.5 to 6 W = 0 to 6]
A method of manufacturing a thin film head for forming a vapor phase film at least on a surface facing a recording medium. 5. The method according to claim 4, wherein the bias voltage is applied by a self-bias generated by an applied DC power supply or an applied high-frequency power. 6. The method according to claim 4, wherein the protective film is formed by a plasma CVD method. 7. The method for manufacturing a thin film head according to claim 4, wherein said protective film is formed by an ionization vapor deposition method. 8. The method according to claim 4, wherein the protective film is formed by a sputtering method. 9. The method for manufacturing a thin film head according to claim 4, wherein said opposed surface has an oxide base material, an oxide insulating layer, an interlayer thin film, and a soft magnetic metal layer. 10. The method of manufacturing a thin-film head according to claim 4, which has an inductive head portion or has an inductive head portion and an MR element portion.