JPH10270958A - Power synthesis amplifier - Google Patents

Abstract

PROBLEM TO BE SOLVED: To efficiently amplify a microwave and to prevent a semiconductor amplifier element from being destroyed owing to excess input by preventing the distribution ratios of plural distributors from becoming equal and to unequally distributing inputs to plural power amplifiers so that they become uniform as much as possible in a use band. SOLUTION: A branch line 90 degrees hybrid 2a has micro strip lines with line width 2aW1 and 2aW2, and a branch line 90 degrees hybrid 2b has micro strip line width being line with 2bW1 and 2bW2. The branch line 90 degrees hybrid has the micro strip lines of line width 3aW1-3cW2. For varying the distribution ratios in such a form, a maximum loss -6.6 dB is given, for example. Consequently, 0.6 dB is improved by comparing it with the maximum loss when input is equally distributed to the plural power amplifiers, -7.2 dB, for example.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a power combining amplifier used particularly in a microwave band.

[0002]

2. Description of the Related Art FIG. 12 is an explanatory diagram of a conventional power combining amplifier disclosed in Japanese Patent Application No. 7-183. As shown in this figure, the semiconductor amplifying element 1 amplifies a microwave signal. Reference numeral 2 denotes a 90-degree hybrid (distributor) 2 for distributing an input signal. The 90-degree hybrid (combiner) 3 combines the output signals of the semiconductor amplifying device 1.

[0003] The entire power combining amplifier is referred to as Case 4.
The case 4 is provided with an input terminal 5 and an output terminal 6.

FIG. 13 is a detailed explanatory diagram showing the configuration of the 90-degree hybrids (distributors and combiners) 2 and 3. As shown in this figure, a configuration of a 90-degree hybrid branch line of a microstrip line is employed.

This 90-degree branch line hybrid uses a microstrip line having a line width of w1 and w2, and changes the input / output (replaces an input terminal and an output) to provide a distributor or a composite. Can be used as a vessel.

Next, the operation will be described. The microwave input from the input terminal 5 is divided into two by the 90-degree hybrid (distributor) 2a. Next, the two-divided microwaves are again used as 90-degree hybrids (distributors) 2b and 2c.
, Further divided into two and divided into four, and input to the semiconductor amplifying elements 1a, 1b, 1c and 1d. The microwaves input to the semiconductor amplifying elements 1a, 1b, 1c, and 1d respectively include the semiconductor amplifying elements 1a, 1b, 1c,
The signals are amplified by 1d, respectively, and output to the output side 90-degree hybrids (combiners) 3a and 3b.

The 90-degree hybrid (combiner) 3a combines the microwaves output from the semiconductor amplifying elements 1a and 1b.
The 90-degree hybrid (combiner) 3b combines the output microwaves of the semiconductor amplifying elements 1c and 1d. These synthesized microwaves are 90 degree hybrid (synthesizer) 3c
Is output to And 90 degree hybrid (synthesizer)
3c combines all the inputted microwaves, and outputs the combined microwave from the output terminal 6.

Here, the 90-degree hybrids (distributors) 2a, 2b and 2c and the (combiners) 3a, 3b and 3
c, all have the same configuration, and are configured such that microwaves are evenly distributed or combined in the microwave band used. FIG. 14 is an explanatory diagram showing the electrical performance of these 90-degree hybrids (distributors) 2a, 2b, 2c and hybrids (combiners) 3a, 3b, 3c. This figure shows these 90
A graph showing pass characteristics of the degree hybrids (distributors) 2a, 2b, 2c and the hybrids (combiners) 3a, 3b, 3c is shown. In each graph, the horizontal axis represents frequency, and the vertical axis represents distribution loss (dB). This FIG.
As shown in (a), (b) and (c), these 90
The hybrids (distributors) 2a, 2b, 2c and the hybrids (combiners) 3a, 3b, 3c all have the same electrical performance. Then, the terminators 7a, 7b, 7c,
7d, 7e, 7f, 7g are 90-degree hybrids (distributors) 2a, 2b, 2c and hybrid (combiner) 3
a, 3b, 3c and semiconductor amplifying elements 1a, 1b, 1
c) Absorb the microwave reflected by 1d.

[0009]

As described above, the conventional power combining amplifier has the same 90-degree hybrid (distributor) 2.
a, 2b, 2c, 90-degree hybrid (combiner) 3a,
3b and 3c. Therefore, the input points k, l, m, n, of the semiconductor amplifying elements 1a, 1b, 1c, 1d
The distribution loss of the microwave at the point is shown in FIG.
The results are as shown in the graphs of (e) and (f). This graph is similar to FIGS. 14 (a), 14 (b) and 14 (c).
The vertical axis represents distribution loss (dB), and the horizontal axis represents frequency.

As described above, when the same 90-degree hybrids (distributors) 2a, 2b, and 2c having the same electric performance are used, the maximum loss is 7.2 dB.

As described above, the large loss and the large difference in the power of the microwave signal supplied to each of the semiconductor amplifying elements 1a, 1b, 1c, and 1d are caused by the fact that the C-class amplification is particularly performed. , Semiconductor amplifying elements 1a, 1b that do not operate
1c and 1d may be caused. The occurrence of such non-operating semiconductor amplifying elements 1a, 1b, 1c, 1d
The output power may be insufficient, or the semiconductor amplifying elements 1a, 1b, 1c, and 1d to which an excessive input is applied may be generated, and the semiconductor amplifying element may be destroyed.

Next, the reason why the difference in the distribution power of microwaves occurs will be described in more detail.

FIG. 15 shows a partial circuit configuration diagram on the input side in FIG. FIG. 15 also shows a signal flow in the 90-degree hybrid 2a. That is, in the 90-degree hybrid 2a, the input signal is X
It is divided into two in the direction and the Y direction. The signals in each direction are called "signal X" and "signal Y".

The frequency characteristics of these signals X and Y are shown in the graph of FIG. FIG. 16 (a)
Shows the frequency characteristics of the signal X. The line in the direction in which the signal X flows is called a coupling line. On the other hand, the frequency characteristic of the signal Y is shown in FIG. The line in the direction in which the signal Y flows is called a through line. In each of FIGS. 16A and 16B, the horizontal axis represents frequency, and the vertical axis represents distribution loss (dB).

In the text, in such frequency characteristics,
A portion where the distribution loss is small is called a “mountain”, and a portion where the distribution loss is large is called a “valley”. For example, in FIG. 16A, the distribution loss is larger in the higher and lower frequency bands, and this portion is called a valley. Further, the distribution loss is small in the vicinity of the center of the frequency band, and this part is called a mountain. Similarly, in the 90-degree hybrid 2b, the signal is distributed to the coupling line and the through line for the input signal X, respectively. A signal flowing through the coupling line of the 90-degree hybrid 2b is called a signal X #, and a signal flowing through the through line is called a signal Y #. The frequency characteristics of these signals X # and Y # are the same as those shown in FIG. Such frequency characteristics are the same in the 90-degree hybrid 2c. The signal on the coupling line in the 90-degree hybrid 2c is called a signal X ##, and the signal in the direction of the through line is called a signal Y ##.

Since the 90-degree hybrids 2a, 2b, and 2c have the above-described frequency characteristics, the signals input to the semiconductor amplifying elements 1a, 1b, 1c, and 1d are shown in FIGS. Will be like that.

First, the signal input to the semiconductor amplifying element 1a has a frequency characteristic obtained by combining the characteristic of the signal X of the 90-degree hybrid 2a and the frequency characteristic of the signal Y # of the 90-degree hybrid 2b. Therefore, as shown in FIG. 17A, by combining the frequency characteristics of the signal X and the frequency characteristics of the signal Y #, the peaks and the valleys and the valleys and the valleys cancel each other, and as a result, The microwave signal supplied to the semiconductor amplifier 1a has a flat characteristic with respect to the frequency. FIG. 17 (a)
, Three graphs are shown, and the horizontal axis and the vertical axis of these graphs indicate the frequency, and the vertical axis indicates the distribution loss (dB), as in FIGS. 14 and 16.

Next, FIG. 17B shows the characteristics of the signal input to the semiconductor amplifying element 1b. A signal having a combination of the frequency characteristic of the signal X of the 90-degree hybrid 2a and the frequency characteristic of the signal X # of the 90-degree hybrid 2b is input to the semiconductor amplifying element 1b. As a result, FIG.
As shown in FIG. 7B, the peaks and the valleys and the valleys and the valleys reinforce each other, and the distribution loss has a frequency characteristic that greatly changes depending on the frequency.

Similarly, the frequency characteristic of the microwave input to the semiconductor amplifying element 1c is shown in FIG. The characteristic shown here is a combination of the characteristic of the signal Y of the 90-degree hybrid 2a and the characteristic of the signal X ## of the 90-degree hybrid 2c. As a result, the peaks and the valleys cancel each other, and the distribution loss takes a flat value in the frequency band to be used.

FIG. 18B shows the characteristics of the microwave inputted to the semiconductor amplifying element 1d. As shown here, the microwave signal input to the semiconductor amplifying element 1d has a characteristic obtained by combining the signal Y of the 90-degree hybrid 2a and the frequency characteristic of the signal Y ## of the 90-degree hybrid 2c. Will have. As a result, as in the case of FIG. 17B, the peak-to-peak portion and the valley-to-valley portion reinforce each other, and the distribution loss greatly changes depending on the frequency. In the present invention, FIG.
This is done in order to prevent peaks and peaks or valleys and valleys from strengthening each other as shown in FIG. 18 (b) and to prevent the distribution loss from fluctuating greatly.

The present invention has been made in order to solve the above-mentioned problems. The microwave can be distributed and input to the semiconductor amplifying element as uniformly as possible to efficiently amplify the microwave. An object of the present invention is to obtain an excellent power combining amplifier that does not destroy a semiconductor amplifying element.

For example, the semiconductor amplifying device 1b is configured as shown in FIG.
As shown in (b), the frequency characteristic of the signal X and the frequency characteristic of the signal X # are combined.
By increasing the coupling of # (the coupling line of the 90-degree hybrid 2b), the valley of the signal X # can be reduced. Then, the semiconductor amplifying element 1b
In the frequency characteristic of the signal X + signal X # at the point, the effect that the valley portion is reduced can be obtained.

However, if the coupling of the signal X # is simply increased, the signal Y # of the 90-degree hybrid 2b is simply increased.
In contrast, the distribution loss in the through line increases. As a result, the microwave signal (= signal X + signal Y #) supplied to the semiconductor amplifying element 1a is reduced. Therefore, it is necessary to adopt a means to balance the whole in consideration of the above circumstances.

[0024]

SUMMARY OF THE INVENTION A power combining amplifier according to the present invention receives a plurality of splitters for splitting a microwave signal into a plurality of waves, and receives each of the split microwave signals. A power combining amplifier comprising: a plurality of power amplifiers for amplifying; and a plurality of combiners for receiving respective output signals of the plurality of power amplifiers and combining the output signals. Are non-identical, and the inputs to the plurality of power amplifiers are unequally distributed so as to be as uniform as possible within the used band.

In the power combining amplifier according to the present invention, the number of the plurality of distributors is three.

In the power combining amplifier according to the present invention, the number of the plurality of distributors is seven.

[0027] In the power combining amplifier according to the present invention, the plurality of distributors are 90-degree hybrid microstrip line branch lines.

[0028] In the power combining amplifier according to the present invention, the plurality of distributors may include a microstrip interdigital 90.
The one that is hybrid.

In the power combining amplifier according to the present invention, the plurality of distributors may include a triplate line branch line 90.
The one that is hybrid.

[0030] In the power combining amplifier according to the present invention, the plurality of distributors are air line 90-degree hybrids.

In the power combining amplifier according to the present invention, the plurality of distributors are a triplate 90-degree hybrid.

[0032] The power combining amplifier according to the present invention includes an impedance matching means for connecting the plurality of dividers and the plurality of power amplifiers, and a signal divided by the plurality of dividers is The power is supplied to the plurality of power amplifiers via impedance matching means.

[0033] In the power combining amplifier according to the present invention, the plurality of distributors and the plurality of power amplifiers are formed on the same substrate.

[0034] The power combining amplifier according to the present invention includes connection means for connecting the plurality of dividers and the plurality of power amplifiers, wherein the plurality of dividers and the plurality of power amplifiers are connected to each other. Are formed on different substrates and are connected by the connection means.

In the power combining amplifier according to the present invention, the connection means includes a connector means and a cable means.

The power combining amplifier according to the present invention comprises a plurality of dividers for dividing a microwave signal into a plurality of waves, and a plurality of power amplifiers for receiving each of the divided microwave signals and amplifying the microwave signal. An amplifier and a plurality of combiners for receiving the output signals of the plurality of power amplifiers and combining the output signals,
The combining ratio of the plurality of combiners is not the same, and the combining ratio is set so that the outputs from the plurality of power amplifiers are combined most efficiently.

In the power combining amplifier according to the present invention, the number of the plurality of combiners is three.

[0038] In the power combining amplifier according to the present invention, the number of the plurality of combiners is seven.

[0039] In the power combining amplifier according to the present invention, the plurality of combiners are 90-degree branch line hybrids of microstrip lines.

In the power combining amplifier according to the present invention, the plurality of combiners include a microstrip interdigital 90.
The one that is hybrid.

In the power combining amplifier according to the present invention, the plurality of combiners may include a branch line 90 of a triplate line.
The one that is hybrid.

[0042] In the power combining amplifier according to the present invention, the plurality of combiners are airline 90-degree hybrids.

In the power combining amplifier according to the present invention, the plurality of combiners are a triplate 90-degree hybrid.

[0044] A power combining amplifier according to the present invention includes impedance matching means for connecting the plurality of combiners and the plurality of power amplifiers, and a signal amplified by the plurality of power amplifiers is The signal is supplied to the plurality of combiners via the impedance matching means.

In the power combining amplifier according to the present invention, the plurality of combiners and the plurality of power amplifiers are formed on the same substrate.

A power combining amplifier according to the present invention includes a plurality of combiners and connection means for connecting the plurality of power amplifiers, wherein the plurality of combiners and the plurality of power amplifiers are connected to each other. Are formed on different substrates and are connected by the connection means.

In the power combining amplifier according to the present invention, the connection means includes a connector means and a cable means.

[0048]

BEST MODE FOR CARRYING OUT THE INVENTION

Embodiment 1 FIG. First, the present invention employs the following basic principle to overlap the peaks and valleys of the frequency characteristics of a 90-degree hybrid.

First, the distribution loss in the coupling line of the 90-degree hybrid 2a is set as shown in the graph of FIG. That is, the peak portion of the frequency characteristic is set to C (dB), and the portion corresponding to the valley is set to be a distribution loss of D (dB). When the 90-degree hybrid 2a is designed in this manner, the distribution loss of the through line is reduced as shown in FIG.
As shown in FIG. here,

## EQU1 ## C # (dB) = ¹⁰ log {1-10 ^{(C / 10)} } D # (dB) = 10 log１０1-1
0 ^{(D / 10)} ｝.

Similarly, the coupling line of the 90-degree hybrid 2b is set such that the distribution loss at the peak is E (dB) and the distribution loss at the valley is F (dB). Then, the graph of the frequency characteristic is shown in FIG.
The graph is as shown in FIG. By setting the frequency characteristic of the coupling line in this way, a graph of the frequency characteristic of the through line is as shown in FIG. Similar to the 90-degree hybrid 2a, the distribution loss E # (dB) at the trough portion of the through line is

## EQU2 ## E # (dB) = ¹⁰ log {1-10 ^{(E / 10)} }. Similarly, the distribution loss F # (dB) at the peak of the through line is

## EQU3 ## F # (dB) = ¹⁰ log {1-10 ^{(F / 10)} }

Further, as for the coupling line of the 90-degree hybrid 2c, as shown in the graph of FIG. 1 (e), the distribution loss at the peak is represented by G (dB), and the distribution loss at the valley is represented by H. By setting (dB), the frequency characteristic of the through line becomes a graph as shown in FIG. In the 90-degree hybrid 2c as well, the distribution loss of the through line is summarized as follows. That is,

## EQU4 ## G # (dB) = ¹⁰ log {1-10 ^{(G / 10)} } H # (dB) = 10 log１０1-1
0 ^{(H / 10)} ｝.

As described above, when each distribution loss is expressed, the distribution loss at the portion where the valleys of the semiconductor amplifying elements 1b and 1d overlap can be expressed as follows.

The portion where the valleys of the semiconductor amplifying element 1b overlap each other is D (dB) + F (dB).

The distribution loss of the valley-to-valley overlap portion in the semiconductor amplifying element 1d is as follows:

## EQU5 ## C # (dB) + G # (dB) = 10 log ｛1−
10 ^{(C / 10)} {+10 log {1-10 ^{(G / 10)} }}. Therefore,

D (dB) + F (dB) = 10 log ｛1-10
^{(C / 10)} ｝ + 10log ｛1-10 ^{(G / 10)} 、
It is understood that 90-degree hybrids (distributors) 2b and 2c that realize F (dB) and G (dB) may be created.

Given the values of F (dB) and G (dB), there is a known method of designing a 90-degree hybrid realized by those values.

As shown in FIG. 2, in the 90-degree hybrid using the microstrip, (1) to
Assuming that the distribution loss at the center frequency of the coupling line toward (2) is k (dB),

## EQU7 ## Z1 = Z0√ ｛1-10^{(k / 10)}｝ Z2 = Z1 / 10^{(k / 20)}  l1 = l2 = λ_g/ 4 where λ_gIs the wavelength at the center frequency. Also,
The line impedances Z0, Z1, Z2 are determined according to a known method.
It is determined from the line widths W0, W1, and W2. In general,
Line impedance increases as W (line width) increases
As Z becomes smaller and the line width W becomes narrower, the line
The impedance Z tends to increase.

Specifically, the present invention has the configuration as described in the above means.

Embodiment 2 Hereinafter, embodiments of the present invention will be described in more detail with reference to the drawings. 3, the same reference numerals as those in FIG. 10 indicate the same or corresponding parts. That is,
The semiconductor amplifying element 1 amplifies microwaves, and the 90-degree hybrids (distributors) 2a, 2b, and 2c distribute input signals. Also, 90-degree hybrids (combiners) 3a, 3b, 3
c synthesizes the output of the semiconductor amplifying element 1. This power combining amplifier is housed in case 4. The case 4 has an input terminal 5 and an output terminal 6. A terminator 7 is also provided.

In the present embodiment, the 90-degree hybrid is a microstrip line branch line 90.
Degree hybrid is adopted. The branch line 90-degree hybrid 2a has microstrip lines having line widths 2aw1 and 2aw2, and the branch line 90-degree hybrid 2b has microstrip lines having line widths 2bw1 and 2bw.

Hereinafter, it is assumed that the 90-degree branch line hybrid has microstrip lines having line widths w1 and w2, respectively. Also, their branch lines 90
The hybrid is used as a distributor or a combiner by changing the input / output (replace the input terminal and the output terminal). FIG. 4 shows a 90-degree hybrid (synthesizer) 3a.
3c and a graph showing microwave distribution loss at input points k, l, m, n and points of the semiconductor amplifying elements 1a, 1b, 1c, 1d. In these graphs, as in the above-described graphs, the horizontal axis represents frequency, and the vertical axis represents distribution loss (cB).

Next, the operation will be described. The microwave input from the input terminal 5 is split into two by the 90-degree hybrid (distributor) 2a. Next, the two-divided microwaves are again used as 90-degree hybrids (distributors) 2b and 2c.
, Further divided into two and divided into four, and input to the semiconductor amplifying elements 1a, 1b, 1c and 1d.

The microwave supplied to the semiconductor amplifying elements 1a, 1b, 1c and 1d is applied to the semiconductor amplifying elements 1a, 1b and 1d.
c, 1d, and the amplified signal is
It is output to the 0-degree hybrids (combiners) 3a and 3b. The 90-degree hybrid (combiner) 3a combines the output microwaves of the semiconductor amplifying elements 1a and 1b. or,
The 90-degree hybrid (combiner) 3b combines the output microwaves of the semiconductor amplifying elements 1c and 1d.

90 degree hybrids (combiners) 3a and 3
The composite signal b is output to the 90-degree hybrid (combiner) 3c. 90 degree hybrid (combiner) 3c
Synthesizes all of these microwaves and outputs them to the output terminal 6.

The branch line 90-degree hybrid 2a has a microstrip line having line widths 2aw1 and 2aw2, and the branch line 90-degree hybrid 2b has microstrip line widths having line widths 2bw1 and 2bw2. I have.

Hereinafter, the 90-degree branch line hybrid is configured to have microstrip lines having line widths 3aw1 to 3cw2, respectively. Therefore, the input points k, l, of the semiconductor amplifying elements 1a, 1b, 1c, 1d
The distribution loss of the microwave at points m and n is as shown in the graph of FIG. Specifically, input points k, l,
FIG. 4 is a graph showing characteristics of signals appearing at points m and n.
(D), FIG. 4 (e), FIG. 4 (f), and FIG. 4 (g). In these graphs, similarly to the graphs described above, the horizontal axis represents frequency, and the vertical axis represents distribution loss (dB).

As described above, in this embodiment, since the distribution ratios are different, FIGS. 4D, 4E, and 4
(F), as shown in FIG.
It can be 6.6 dB. Therefore, 0.6 dB compared with the maximum loss of -7.2 dB according to the above-described conventional technique.
Improvements have been made.

Embodiment 3 In the above embodiment, four semiconductor amplifying elements 1a, 1b, 1c, and 1d and six 90-degree hybrids (distributors) 2a, 2b, and 2c and 90-degree hybrids (combiners) 3a, 3b, and 3c are provided in total. Has been described, but more semiconductor amplifying elements 1 and 9
It is also preferable to use a 0-degree hybrid (distributor) 2 and a 90-degree hybrid (combiner) 3.

FIG. 5 shows a configuration diagram of a power combining amplifier in the case of using eight semiconductor amplifying elements and fourteen 90-degree hybrids (dividers). Thus, four semiconductor amplification elements 1 and six 90-degree hybrids (distributors) are used.
It is apparent that the same effect as that shown in the second embodiment can be obtained in other combinations, not limited to the case of the number.

Embodiment 4 FIG. 6 is an explanatory diagram showing a configuration of a distributor and a combiner according to another embodiment of the present invention. As shown in this figure, in the present embodiment, a 90-degree hybrid (distributor, combiner) is not a microstrip line branch line 90-degree hybrid but a micro-strip line unlike the first embodiment. A strip interdigital 90-degree hybrid is used. In the microstrip interdigital 90-degree hybrid, the distribution ratio can be optimized by changing the line width w and the line interval s. As a result, it is clear that the same effect as in the second embodiment is provided.

Embodiment 5 FIG. Note that, in the second embodiment and the like, the case where the semiconductor amplifying element 1 is directly connected to the 90-degree hybrid (distributor) has been described.
Some power combining amplifiers require impedance matching means.

FIG. 7 is an explanatory diagram showing the configuration of a power combining amplifier when an impedance matching pattern is required before and after the semiconductor amplifying element 1.

In this case, the impedance matching patterns 8a, 8b, 8c, 8d are designed by a known method and used as a configuration of a power combining amplifier.

The semiconductor amplifying elements 1a, 1b, 1c and 1d are matched with the microstrip line by the impedance matching patterns 8a, 8b, 8c and 8d. The 90-degree hybrids (distributors) 2a, 2b, and 2c are configured as shown in the first embodiment and the like, whereby the second embodiment is used.
It is clear that the same effect as the above is achieved.

Embodiment 6 FIG. In the above-described embodiment, the 90-degree hybrid (distributor) 2 and the 90-degree hybrid (combiner) 3 are formed on the same substrate as the semiconductor amplifying element 1, but they need not necessarily be formed on the same substrate. It is also preferable that the 90-degree hybrid (distributor) 2 and the 90-degree hybrid (combiner) 3 are connected to the semiconductor amplifying element 1 via a connector or a cable.

FIG. 8 shows a 90-degree hybrid (distributor).
The 2, 90-degree hybrid (synthesizer) 3 is not directly connected to the semiconductor amplifying device 1, but is connected to the connector 9a,
9b, 9c, 9d, 9e, 9f, 9g, 9h, 9i, 9
j, 9k, 9l, 9m, 9n, 9o, 9p and cables 10a, 10b, 10c, 10d, 10e, 10f, 1
0g and 10h. 90 degree hybrid (distributor) 2, 90 degree hybrid (combiner)
It is apparent that the configuration of the third embodiment is the same as that of the first embodiment and the like, so that the distribution ratio is optimized and the same effect as the second embodiment and the like is obtained.

Of course, 90 degree hybrid (distributor)
2 or 90-degree hybrid (combiner) 3, micro-strip line branch line 90-degree hybrid,
It is also preferable to use a 90-degree hybrid such as a microstrip interdigital 90-degree hybrid as in the second embodiment.

Embodiment 7 In the second embodiment, a branch line 90-degree hybrid of a microstrip line is used as the 90-degree hybrid (distributor) 2 and the 90-degree hybrid (combiner) 3.

However, the 90-degree hybrid (distributor) 2
Alternatively, it is also preferable to use a branch line 90-degree hybrid of a triplate line as the 90-degree hybrid (combiner) 3.

FIG. 9 shows a 90-degree hybrid (distributor).
2 shows a configuration diagram of a power combining amplifier in the case of using a branch line 90-degree hybrid of a triplate line as the 2 or 90-degree hybrid (combiner) 3. As shown in this figure, the 90-degree hybrid (distributor) 2 and the 90-degree hybrid (combiner) 3 are composed of triplate upper surface dielectric substrates 11a and 11b and triplate lower surface dielectric substrates 12a and 12b. Is formed on each.

Also in the present embodiment, the 90-degree hybrid (distributor) 2 and the 90-degree hybrid (combiner) 3
It is clear that the same effects as those of the second embodiment and the like can be obtained by optimizing the distribution ratio of.

Embodiment 8 FIG. FIG. 10 shows a 90-degree hybrid (distributor) 2 and a 90-degree hybrid (combiner)
3 is a microstrip line branch line 9
Air line 9 that can be used in place of 0 degree hybrid
An explanatory diagram of the 0-degree hybrid is shown.

The 90-degree air line hybrid shown in this figure is replaced with a microstrip line branch line 90-degree hybrid, and is connected to a plurality of semiconductor amplifying elements 1 by cables. It is obvious that the same effect as in the second embodiment can be obtained by optimizing the distribution ratio of the hybrid.

The 90-degree hybrid (distributor) 2, 90
When a 90-degree air line hybrid is used as the degree hybrid (synthesizer) 3, the distribution ratio is as shown in FIG.
It is determined by the width w and the gap s shown at 0. By designing these width w and gap s by a known method,
The distribution ratio can be optimized.

Embodiment 9 FIG. FIG. 11 shows a 90-degree hybrid (distributor) 2 and a 90-degree hybrid (combiner)
3 is a microstrip line branch line 9
An illustration of a triplate 90 degree hybrid where the 0 degree hybrid 2 can be used instead is shown.

It is apparent that the same effect can be obtained by optimizing the distribution ratio also in the case of using the 90 degree triplate hybrid as shown in FIG. .

[0086]

As described above, according to the present invention, the distribution ratios of the plurality of distributors are not made equal, and the distribution to the plurality of power amplifiers is made uneven distribution so as to be as uniform as possible within the band used. As a result, microwaves can be efficiently amplified,
An excellent power combining amplifier that does not destroy the semiconductor amplifying element due to excessive input can be obtained.

The present invention has the following effects.

According to the present invention, since the distribution ratios of the distributors are not the same, the power supplied to the power amplifier can be made uniform.

According to the present invention, since three distributors are used, signals can be evenly distributed to four.

According to the present invention, since seven distributors are used, signals can be uniformly distributed into eight.

According to the present invention, a power combining amplifier using a microstrip line branch line 90-degree hybrid as a distributor can be provided.

According to the present invention, a power combining amplifier using a microstrip interdigital 90-degree hybrid as a distributor can be provided.

According to the present invention, a power combining amplifier using a branch line 90-degree hybrid of a triplate line as a distributor can be provided.

According to the present invention, a power combining amplifier using an airline 90-degree hybrid as a distributor can be provided.

According to the present invention, a power combining amplifier using a triplate 90-degree hybrid as a distributor can be provided.

According to the present invention, in a power amplifier in which impedance matching between the distributor and the power amplifier is performed, the input power of each power amplifier can be made uniform.

According to the present invention, since the distributor and the power amplifier are formed on the same substrate, a small power combining amplifier can be obtained.

According to the present invention, since the distributor and the power amplifier are formed on different substrates, each component can be formed independently.

According to the present invention, there is provided a power combining amplifier which can easily connect a distributor and a power amplifier formed on different substrates by a connector and a cable.

According to the present invention, since the distribution ratios of the combiners are not the same, the power output from the power amplifier can be uniformly combined.

According to the present invention, since three synthesizers are used, four signals can be uniformly synthesized.

According to the present invention, since seven synthesizers are used, eight signals can be uniformly synthesized.

According to the present invention, a power combining amplifier using a microstrip line branch line 90-degree hybrid as a combiner can be provided.

According to the present invention, a power combining amplifier using a microstrip interdigital 90-degree hybrid as a combiner can be provided.

According to the present invention, a power combining amplifier using a branch line 90-degree hybrid of a triplate line as a combiner can be provided.

According to the present invention, a power combining amplifier using an airline 90-degree hybrid as a combiner can be provided.

According to the present invention, a power combining amplifier using a triplate 90-degree hybrid as a combiner can be provided.

According to the present invention, in a power amplifier in which impedance matching between a combiner and a power amplifier is taken, the output power of each power amplifier can be uniformly combined.

According to the present invention, since the combiner and the power amplifier are formed on the same substrate, a small power combiner can be obtained.

According to the present invention, since the combiner and the power amplifier are formed on different substrates, each component can be formed independently.

According to the present invention, it is possible to obtain a power combining amplifier that can easily connect a combiner and a power amplifier formed on different substrates with a connector and a cable.

[Brief description of the drawings]

FIG. 1 is an explanatory diagram illustrating a solution principle of the present invention.

FIG. 2 is an explanatory plan view showing a configuration of a branch line 90-degree hybrid of a microstrip line according to one embodiment of the present invention;

FIG. 3 is a diagram illustrating a power combining amplifier according to one embodiment of the present invention.

FIG. 4 shows the electrical performance of a 90-degree hybrid (distributor, combiner) of a power combining amplifier according to one embodiment of the present invention;
FIG. 3 is a diagram illustrating distribution loss of microwaves at an input point of a power amplification element.

FIG. 5 is a diagram illustrating a power combining amplifier according to another embodiment of the present invention.

FIG. 6 shows another embodiment of the present invention, in which a 90-degree hybrid (divider, combiner) is not a microstrip line branch line 90-degree hybrid but a microstrip interdigital 90-degree hybrid. FIG.

FIG. 7 is a view showing another embodiment of the present invention to which an impedance matching pattern is added.

FIG. 8 is a diagram illustrating another embodiment of the present invention.

FIG. 9 is a diagram illustrating another embodiment of the present invention.

FIG. 10 is another embodiment of the present invention and is an explanatory view showing another embodiment of the 90-degree hybrids 2 and 3.

FIG. 11 is another embodiment of the present invention and is an explanatory diagram showing another embodiment of the 90-degree hybrids 2 and 3.

FIG. 12 is a diagram illustrating a conventional power combining amplifier.

FIG. 13 is a detailed view of a microstrip line branch line 90-degree hybrid of a conventional power combining amplifier.

FIG. 14 is an explanatory diagram showing a graph showing electric performance of 90-degree hybrids 2 and 3 of a conventional power combining amplifier and distribution loss of microwaves.

FIG. 15 is a partial explanatory diagram on the input side in FIG. 12;

FIG. 16 is an explanatory diagram showing a graph representing frequency characteristics of a signal X and a signal Y.

FIG. 17 is an explanatory diagram showing a graph illustrating frequency characteristics of a signal input to a semiconductor amplifier.

FIG. 18 is an explanatory diagram showing a graph illustrating frequency characteristics of a signal input to a semiconductor amplifier.

[Explanation of symbols]

Reference Signs List 1 semiconductor amplifying element, 2 90 degree hybrid (distributor), 3 90 degree hybrid (combiner), 4 case, 5 input terminal, 6 output terminal, 7 terminator, 8 impedance matching pattern, 9 connector, 10
Cable, 11 Triplate top dielectric substrate, 12
Triplate bottom dielectric substrate.

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁶ Identification code FI H03F 3/68 H03F 3/68 Z

Claims (24)

[Claims] A plurality of splitters for splitting a microwave signal into a plurality of waves; a plurality of power amplifiers for receiving each of the split microwave signals and amplifying the microwave signal; A plurality of combiners that receive each output signal of the power amplifier and combine these output signals, wherein the distribution ratio of the plurality of distributors is not the same, and the plurality of power amplifiers Characterized in that the inputs of the power combining amplifiers are unequally distributed such that the inputs are as uniform as possible within the band used. 2. The power combining amplifier according to claim 1, wherein the number of the plurality of distributors is three. 3. The power combining amplifier according to claim 1, wherein the number of the plurality of distributors is seven. 4. The power combining amplifier according to claim 1, wherein the plurality of distributors are 90-degree hybrid branch line hybrids of microstrip lines. 5. The power combining amplifier according to claim 1, wherein the plurality of distributors are microstrip interdigital 90-degree hybrids. 6. The power combining amplifier according to claim 1, wherein said plurality of distributors are 90 degree hybrids of a branch line of a triplate line. 7. The air distributor according to claim 7, wherein the plurality of distributors include an air line.
The hybrid according to claim 1, wherein the hybrid is a degree hybrid.
4. The power combining amplifier according to 2 or 3. 8. The dispenser according to claim 8, wherein the plurality of distributors include a triplate.
The hybrid according to claim 1, wherein the hybrid is a degree hybrid.
4. The power combining amplifier according to 2 or 3. 9. An impedance matching means for connecting the plurality of dividers and the plurality of power amplifiers, wherein a signal divided by the plurality of dividers is
9. The power combining amplifier according to claim 1, wherein the power combining amplifier is supplied to the plurality of power amplifiers via the impedance matching means. 10. The apparatus according to claim 1, wherein the plurality of distributors and the plurality of power amplifiers are formed on a same substrate. 10. The power combining amplifier according to 7, 8, or 9. 11. A connecting means for connecting the plurality of dividers and the plurality of power amplifiers, wherein the plurality of dividers and the plurality of power amplifiers are formed on different substrates. Wherein said connection means is connected by said connection means.
The power combining amplifier according to 4, 5, 6, 7, 8 or 9. 12. The apparatus according to claim 11, wherein said connection means includes a connector means and a cable means.
A power combining amplifier as described in any of the preceding claims. 13. A plurality of distributors for dividing a microwave signal into a plurality of waves; a plurality of power amplifiers for receiving each of the divided microwave signals and amplifying the microwave signal; A plurality of combiners for receiving each output signal of the power amplifier and combining the output signals, wherein a combining ratio of the plurality of combiners is not the same, and Wherein the combining ratio is set so that the outputs of the power combining are most efficiently combined. 14. The power combining amplifier according to claim 13, wherein the number of the plurality of combiners is three. 15. The power combining amplifier according to claim 13, wherein the number of the plurality of combiners is seven. 16. The power combining amplifier according to claim 13, wherein the plurality of combiners are a 90-degree branch line hybrid of a microstrip line. 17. The power combining amplifier according to claim 13, wherein the plurality of combiners are microstrip interdigital 90-degree hybrids. 18. The power combining amplifier according to claim 13, wherein the plurality of combiners are a 90 degree hybrid of a branch line of a triplate line. 19. The plurality of synthesizers are connected to an air line 9
The said 1 degree is a hybrid, The said 1 characterized by the above-mentioned.
16. The power combining amplifier according to 3, 14, or 15. 20. The plurality of synthesizers include a triplate 9.
The said 1 degree is a hybrid, The said 1 characterized by the above-mentioned.
16. The power combining amplifier according to 3, 14, or 15. 21. An impedance matching means for connecting the plurality of combiners and the plurality of power amplifiers, wherein a signal amplified by the plurality of power amplifiers is connected via the impedance matching means. , Said plurality of combiners being supplied to said plurality of combiners.
0. The power combining amplifier according to item 0. 22. The apparatus according to claim 13, wherein the plurality of combiners and the plurality of power amplifiers are formed on the same substrate.
22. The power combining amplifier according to 8, 19, 20 or 21. 23. Connecting means for connecting the plurality of combiners and the plurality of power amplifiers, wherein the plurality of combiners and the plurality of power amplifiers are formed on different substrates. 14. The method according to claim 13, wherein said connection means is connected by said connection means.
The power combining amplifier according to 5, 16, 17, 18, 19, 20, or 21. 24. The apparatus according to claim 23, wherein said connection means includes connector means and cable means.
A power combining amplifier as described in any of the preceding claims.