JPH10270436A - Semiconductor manufacturing apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To make the maintenance easy, improve the availability and form a film by providing an independent energy beam irradiation chamber contg. an energy beam irradiator and means for blocking reactive gases to gasify and feed materials liq. or solid at room temp. SOLUTION: A semiconductor wafer 9 in a CVD chamber 5 is heated by a heater 8 through an SiC disk 7 supported with a quartz tube 13, raw material gases are fed into the CVD chamber 5 pressure-controlled by a vacuum pump 10 and uniformly fed over the heated wafer 9 to form a PZT dielectric film. The material gases are fed in the chamber 5 through pipings 4a-4c after gasifying a solid materials 1a-1c by gasifiers 2a-2c. Thus the heater 8 never contacts the material gases and causes no trouble. The tube 13 and disk 7 with deposits adhered thereto are easily regenerated or replaced.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] The present invention relates to a method of supplying a raw material which is liquid or solid at ordinary temperature as a material gas,
The present invention relates to a semiconductor manufacturing apparatus suitable for forming a film and causing a reaction.

[0002]

2. Description of the Related Art Conventionally, SBT, PZT, and BST dielectric thin film manufacturing apparatuses are disclosed in Mizutani and Funakubo: Applied Physics 62, 124.
6 (1993), the part in contact with the raw material gas produced by vaporizing the raw material which is liquid or solid at normal temperature was heated to about 200 ° C. in order to prevent condensation of the gas.

Further, even in a baking apparatus for performing a heat treatment of a wafer in a heated steam, that is, a reactive gas atmosphere formed by vaporizing a raw material which is liquid at normal temperature, a portion in contact with the reactive gas is used to prevent the gas from condensing. The pipes and valves were warmed.

[0004]

In the prior art, gas pipes and valves are heated to a constant temperature by, for example, winding a heater in order to prevent condensation and condensation of gas. It is difficult to heat all the contacting parts to a constant temperature, and in the parts deviating from the predetermined temperature, for example, an oxide powder such as PbO is generated in a PZT dielectric film forming apparatus, and is applied to members other than the substrate. In the reactive atmosphere baking apparatus, there is a problem in that the gas condenses and adheres to a member other than the substrate, thereby causing a trouble in the apparatus such as a heater abnormality. Therefore, there is a problem that maintenance and replacement of members are required, and the operation rate of the apparatus is reduced.

SUMMARY OF THE INVENTION An object of the present invention is to provide a structure in which a predetermined temperature portion and a portion other than a predetermined temperature are separated, thereby facilitating maintenance, improving an operation rate, and evaporating a liquid or solid raw material at room temperature. An object of the present invention is to provide a semiconductor manufacturing apparatus which is suitable for supplying a gas to form a film or for supplying a reactive gas to cause a reaction.

[0006]

In order to achieve the above-mentioned object, the present invention provides a substrate reaction processing chamber and a sample substrate held in the substrate reaction processing chamber. An independent energy beam for accommodating the energy beam irradiating means in a semiconductor manufacturing apparatus comprising: a supplying means; and a means for causing the gas to come into contact with the surface of the sample substrate under the irradiation of the energy beam to react the surface of the sample substrate. An irradiation chamber is provided, and means for preventing the gas from contacting the energy beam irradiation means is provided.

More specifically, in the above apparatus, the substrate reaction chamber and the energy beam irradiation chamber are provided with means separated by a partition made of a material other than metal or ceramic.

The partition wall facing the sample substrate is provided with the partition wall made of a ceramic material.

Further, in the above apparatus, means for introducing an inert gas into the energy beam irradiation chamber is provided.

Still further, in the above apparatus, one or more holes are provided in the partition wall, the inert gas is introduced into the energy beam irradiation chamber, and the pressure of the energy beam irradiation chamber is the same as the pressure of the reaction chamber. A means for achieving the above is provided.

Still further, in the above-mentioned apparatus, the partition may be provided with a slit or the partition may be provided separately.

[0012]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is a vertical sectional view showing a principal part of a PZT dielectric film forming apparatus according to an embodiment of the present invention. C
The semiconductor wafer 9 in the VD chamber 5 is heated by the ceramic heater 8 in the heater chamber 6 via the SiC disk 7 supported on the quartz cylinder 13. Thereafter, a material gas is introduced into the CVD chamber 5 whose pressure is controlled to several to several tens of Torr by the vacuum pump 10 and the conductance valve 11, and the heater 8
The PZT dielectric film is formed by flowing the wafer uniformly over the wafer 9 heated to 400 to 900 ° C. The material gas is obtained by converting the solid raw material 1 (a to c) into a vaporizer 2 (a to
c) and gasified by the carrier gas 3
(A to c), and guided into the CVD chamber 5. Further, ozone 22 is generated from oxygen and supplied into the CVD chamber 5 in a circular manner.
At this time, portions other than the quartz cylinder 13 and the SiC disk 7, such as the pipe 4, the valve 11, and the CVD chamber 5, are uniformly heated to 200 ° C. by another heater (not shown).

As a result, since the material gas does not come into contact with the heater 8, there is no accident of the heater 8. The quartz cylinder 13 and the SiC disk 7 to which the product adhered can be easily regenerated or replaced, so that maintenance becomes easy and the operation rate of the apparatus is improved.

The wafer 9 may be placed directly on the SiC disk 7.

An inert gas 12 is introduced into the heater chamber 6 so that the pressure in the heater chamber 6 is equal to the pressure in the CVD chamber 5.
It is also possible to prevent breakage due to the pressure difference between the heater chamber 6 and the heater chamber 6 and further enhance safety.

Further, the SiC disk 7 may be changed to quartz and the partition walls may be made entirely of quartz material.
May be changed to SiC, and all the partition walls may be made of SiC material.

The structure of the SBT / BST dielectric film forming apparatus may be basically the same as that of the PZT.

Furthermore, it is more preferable to provide a heater for heating the quartz cylinder 13 in the heater chamber 6 to prevent the oxide powder from adhering.

FIG. 2 is a vertical sectional view of a main part of a PZT dielectric film forming apparatus according to an embodiment of the present invention. The difference from FIG. 1 is that holes are provided in the SiC disk 7.

An inert gas 12 is introduced into the heater chamber 6,
The pressure in the heater chamber 6 is adjusted to be equal to or higher than the pressure in the CVD chamber 5, and the inert gas 12 is caused to flow on the back surface of the wafer 9 so as not to disturb the flow of the material gas.

As a result, the material gas does not come into contact with the heater 8, and the deposition of the reaction product on the back surface of the wafer is no longer observed.

Further, in order to prevent the SiC disk 7 from being damaged by heat shock, a slit may be provided in the SiC disk 7 or the SiC disk 7 may be divided and used.

FIG. 3 is a vertical sectional view of a main part of a PZT dielectric film forming apparatus according to an embodiment of the present invention. 1 in that an infrared lamp 15 is provided via a quartz window 14 as an energy beam irradiation means.

As a result, the reaction product did not adhere to the quartz window, and the transmittance of infrared rays could always be kept constant.

FIG. 4 is a vertical sectional view of a main part of a baking apparatus for performing a heat treatment of a wafer in a reactive gas according to another embodiment of the present invention. The semiconductor wafer 9 in the quartz reaction chamber 19
Heated by a ceramic heater 8 in a heater chamber 6 via a SiC disk 7 supported by a quartz cylinder 13. Thereafter, the exhaust gas is exhausted by the aspirator 21 using nitrogen gas, and the reaction gas is introduced into the reaction chamber 19 controlled at a pressure of 400 Torr, and is uniformly flowed on the wafer 9 heated to 100 to 600 ° C. by the ceramic heater 8. Thus, the wafer 9 is processed in a heated steam atmosphere. The reaction gas is
The liquid raw material 16 is gasified by the vaporizer 17, flowed through the pipe 18 by the carrier gas 3, and led to the reaction chamber 19.

Parts other than the quartz cylinder 13 and the SiC disk 7 that come into contact with the reactive gas, that is, the pipe 18, the valve 20, and the reaction chamber 19 are made of a material such as fluororesin or quartz. The piping 18, the valve 20, the reaction chamber 19 and the like are heated to 60 ° C. by another heater not shown.

As a result, since the reaction gas does not come into contact with the heater 8, the accident of the heater 8 is eliminated.

It should be noted that the apparatus configuration may be the same as the PZT dielectric film manufacturing apparatus already described.

Further, the present invention can be used as an apparatus having less trouble even in an apparatus other than the MOCVD apparatus and the reactive atmosphere baking apparatus.

[0030]

According to the present invention, there is no accident of the energy beam irradiating means, and the operation rate of the apparatus can be improved.

[Brief description of the drawings]

FIG. 1 is a vertical cross-sectional configuration view of a main part of a semiconductor manufacturing apparatus according to an embodiment of the present invention.

FIG. 2 is a vertical sectional view showing a main part of a semiconductor manufacturing apparatus according to an embodiment of the present invention.

FIG. 3 is a vertical sectional view showing a main part of a semiconductor manufacturing apparatus according to another embodiment of the present invention.

FIG. 4 is a vertical sectional view showing a main part of a semiconductor manufacturing apparatus according to another embodiment of the present invention.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Solid raw material, 2 ... Vaporizer, 3 ... Carrier gas, 4 ... Piping, 5 ... CVD chamber, 6 ... Heater chamber, 7 ... SiC disk, 8
... heater, 9 ... wafer, 10 ... vacuum pump, 11 ...
Conductance valve, 12: inert gas, 13: quartz cylinder.

 ──────────────────────────────────────────────────の Continuing on the front page (72) Inventor Masakazu Sugaya 1-280 Higashi-Koigakubo, Kokubunji-shi, Tokyo Inside the Central Research Laboratory of Hitachi, Ltd. Central Research Laboratory (72) Inventor Takeshi Furusawa 1-280 Higashi Koigakubo, Kokubunji-shi, Tokyo Hitachi Research Laboratory Central Research Laboratory

Claims (8)

[Claims] 1. A substrate reaction processing chamber, means for gasifying and supplying a liquid or solid material at room temperature to a sample substrate held in the substrate reaction processing chamber, and supplying the gas to the sample substrate under irradiation with energy rays. Means for reacting the surface of the sample substrate by contact with the surface,
A semiconductor manufacturing apparatus, comprising: an independent energy beam irradiation chamber accommodating the energy beam irradiation means; and means for preventing the gas from coming into contact with the energy beam irradiation means. 2. The semiconductor manufacturing apparatus according to claim 1, wherein said substrate reaction processing chamber and said energy beam irradiation chamber are provided with means separated by a partition made of a material other than metal or ceramic. 3. The semiconductor manufacturing apparatus according to claim 1, wherein the partition wall of the partition wall is made of a ceramic material. 4. The semiconductor manufacturing apparatus according to claim 1, further comprising means for introducing an inert gas into said energy beam irradiation chamber. 5. The energy beam irradiation chamber according to claim 1, wherein one or more holes are provided in said partition wall, and said inert gas is introduced into said energy beam irradiation chamber. A semiconductor manufacturing apparatus provided with means for making the pressure equal to or higher than the pressure of the chamber. 6. The method of claim 1, 2, 3, 4, or 5,
A semiconductor manufacturing apparatus in which a slit is provided in the partition or the partition is provided by dividing the partition. 7. The semiconductor manufacturing apparatus according to claim 1, 2, 3, 4, 5, or 6, wherein oxygen or ozone is generated and supplied from oxygen to generate an oxide. 8. A semiconductor manufacturing apparatus according to claim 1, wherein said SBT, BST, or PZT dielectric film is manufactured.