JPH10233434A - Electrostatic adsorbent and adsorber - Google Patents

Abstract

PROBLEM TO BE SOLVED: To suppress the foreign matter adherence to the specimen back, by a method wherein a projection and a recession to be the contact part and non- contact part with adsorbed element are formed on the adsorbing surface of electrostatic adsorbent so as to utilize the adsorption force of the non-contact part to be the recession for adsorbing the adsorbed elements. SOLUTION: An arm main body 2 made of a dielectric using one end thereof as an adsorbing part is provided on an electrostatic adsorbent so as to fix electrode plates 6, 6' connecting to a lead wire 9 on the non-adsorbing surface side of the adsorbing part of the arm main body 2. Next, projections 4 to be the contact parts with a adsorbed element 1 are formed on the adsorbing surface of the adsorbing part of the arm main body 2 while the other parts excluding the projections 4 are formed into the recessions 5 to be the non-contact parts. In such a constitution, the adsorbed element 1 is adsorbed into the adsorbing surface of the adsorbing part for abutting against the projections 4 to be fixed and held, thereby using the recessions 5 by the action of the static electricity generated by the potential difference between the adsorbed element 1 and the electrode plates 6, 6'.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electrostatic chuck and an electrostatic chuck for use in fixing and holding or transporting a sample to be subjected to fine processing, such as a conductor or a semiconductor such as a silicon wafer.

[0002]

2. Description of the Related Art Etching of a sample such as a semiconductor wafer or sputtering, CVD (Chemical Vapo)
When a film is formed by (r Deposition) or the like, it is necessary to fix and hold the sample at a predetermined position in the apparatus. Especially when processing fine patterns on semiconductor wafers,
Since the warpage is corrected and flattened for pattern baking of the wafer, it is necessary to securely fix the wafer in a predetermined position. Also, etching, sputtering, CV
In an apparatus such as D, gas is introduced into the back surface of the wafer to improve the thermal conductivity between the wafer and the wafer susceptor during etching or film formation. However, if the gap between the wafer and the wafer susceptor is not uniform, the thermal conductivity is reduced. In addition to lowering the temperature, the temperature in the wafer surface becomes non-uniform, so that a wafer susceptor capable of uniformly contacting the wafer is required.
Conventionally, as a sample holding means for such an application, an electrostatic suction device which can be used even in a vacuum and has an electrostatic suction body capable of uniformly generating a suction force on the entire back surface of a wafer has been developed. Used. Since the electrostatic suction device can hold a wafer in a vacuum, it is also used as a holding device for high-speed transfer in a vacuum. This electrostatic adsorbent is formed by laminating an electrode plate and a dielectric, and generates a Coulomb force by generating a potential difference between the electrode plate and the sample to be adsorbed, thereby causing the sample to be placed on the dielectric. This is to hold by suction.

[0003] Since the electrostatic attraction member directly contacts the back surface of the wafer, it causes foreign substances to adhere to the back surface of the wafer when being attracted. With respect to such an electrostatic attraction device, for example, in JP-A-5-6933, a concave portion is formed on the attraction surface of the electrostatic attraction member, and the area ratio between the contact portion with the object to be attracted and the entire attraction surface is 10 to 10. It has been proposed to set the contact area to 30% and to set the surface roughness (Rmax) of the contact portion to 0.8 S or less to prevent the adhesion of foreign matter.

In recent semiconductor manufacturing processes, there is a problem that dust adheres not only to the front surface of the wafer but also to the back surface of the wafer. This is because there is transfer of foreign matter from the back surface of the wafer to the front surface in the cleaning process and defocus in the photolithography process due to the presence of foreign matter on the back surface. Therefore, keeping the back surface of the wafer clean has been regarded as important.

[0005] Regarding the above-mentioned technology, see Japanese Patent Publication No. 7-1.
There is an example disclosed in JP-A-9831.

[0006]

SUMMARY OF THE INVENTION A sample,
For example, when a semiconductor wafer is sucked, the following can be considered as the reason why foreign matter adheres to the back surface of the wafer. First,
Abrasion powder due to minute sliding on the contact surface between the electrostatic chuck and the wafer may adhere to the back surface of the wafer as foreign matter. In many cases, the dielectric material that composes the electrostatic attraction body is made of ceramics, which is a hard material, and is made by sintering. And the wear powder may adhere to the wafer side.

Secondly, when a foreign substance adhered during manufacturing, processing, or use of the electrostatic suction device and cannot be removed by subsequent cleaning, or a wafer whose back surface is contaminated, is attracted to the electrostatic suction device side, In some cases, the deposited foreign matter may be transferred to the wafer by contact with the back surface of the wafer or by the action of an electric field. The suction surface of the electrostatic attraction body and the wafer are not actually completely in close contact with each other, but a small gap due to surface roughness or undulation is present between the two. When a voltage is applied to generate an attraction force in a state where dust is present in the gap, the dust may be affected by the electric field and adhere to the back surface of the wafer. Conversely, foreign substances may be transferred from the wafer to the electrostatic attraction body side when a wafer whose back surface is contaminated is adsorbed. However, when the area of the contact surface of the adsorbed surface with the wafer is large, the probability of such transfer is high. Will be higher. Therefore, the smaller the contact area with the wafer, the less the wafer is contaminated as a result.

In the above conventional example, in order to reduce the adhesion of foreign matter to the back surface of the wafer, the contact area between the electrostatic attraction body and the wafer is reduced, and a gap is provided in a non-contact portion so that foreign matter cannot be attached. However, the gap (10 to 50 μm) between the non-contact portion and the wafer is too large to obtain a suction force at the non-contact portion. Therefore, a certain contact area is required to obtain a desired suction force, and the reduction of the contact area between the electrostatic adsorber and the wafer is insufficient. As a means for reducing the adhesion of foreign matter on the back surface of the wafer, it is still unsatisfactory. Was enough.

An object of the present invention is to reduce the adhesion of foreign matter on the back surface of a sample when the sample is adsorbed by an electrostatic attraction device.

[0010]

In order to achieve the above object, a dielectric is laminated on an electrode plate, and a potential difference is generated between the electrode plate and an object to be adsorbed, so that the surface of the dielectric is adsorbed. In an electrostatic attraction body that adsorbs an object, irregularities are formed on the surface of the adsorption surface of the electrostatic attraction body as a contact portion and a non-contact portion with the object to be adsorbed, and the attraction force of the non-contact portion, which is a concave portion, is also used. To adsorb the object to be adsorbed. further,
In the formation of the irregularities, the irregularities are formed such that the area of the convex portion, which is the contact portion, is less than 10% of the area of the suction surface. The electrostatic attraction body may be formed by mounting electrodes on a dielectric.

In order to utilize the attraction force of the non-contact portion, the gap between the bottom of the concave portion, which is the non-contact portion, and the object to be sucked in the suction state is set to 0.35 to 9.0 μm. By utilizing the suction force of the non-contact portion, it is possible to dramatically reduce the contact area with respect to the suction surface while maintaining the required suction force as compared with the related art.

The smaller the area of the contact portion on the suction surface of the electrostatic attraction body, the less the friction between the electrostatic attraction device and the to-be-attached object occurs, and the lower the probability of foreign matter transfer to the to-be-adsorbed object. In addition, the effect of reducing the adhesion of foreign substances is increased. When the gap between the non-contact portion and the object to be adsorbed is set to 0.35 to 9.0 μm, sufficient adsorption force can be obtained even in non-contact.
Even when the area of the contact portion is largely reduced, the required suction force can be easily obtained as a whole.

[0013] The unevenness of the surface of the suction surface, which is a contact portion and a non-contact portion with the object, is formed by etching. The irregularities on the surface of the adsorption surface may be formed by partially forming a film by sputtering or CVD. In this case, the contact portion (convex portion) may be formed by forming a film with a material different from the dielectric material constituting the electrostatic attraction body.

Further, in a semiconductor manufacturing apparatus and a semiconductor inspection apparatus including an electrostatic chuck, the above object is achieved by providing an electrostatic chuck using the electrostatic chuck having the above-described configuration.

[0015]

Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a front view showing a first embodiment of the present invention, and FIG. 2 is a cross-sectional view thereof. The electrostatic suction device shown in FIGS. 1 and 2 is an example in which the present invention is applied to a transfer arm attached to a transfer robot for transferring a wafer, and includes an electrostatic suction body 100 that suctions an object to be suctioned (for example, a semiconductor wafer) 1. A power supply 7 for supplying a voltage to the electrostatic attraction body 100 via a lead wire 9 and a switch 8 interposed between the lead wires 7 to disconnect and connect the voltage applied to the electrostatic attraction body 100 are configured. ing.

The electrostatic attraction body 100 is made of a dielectric material, and is attached to the arm body 2 having one end portion as an attraction portion 3 and the attraction portion 3 on the side opposite to the attraction surface, to which the lead wire 9 is connected. And electrode plates 6 and 6 ′. On the suction surface side of the suction portion 3, a contact portion 4 with the object 1 is formed in a convex shape. In the illustrated example, the arm body 2 is made of a dielectric material, and its end is enlarged to be the suction portion 3, but only the suction portion 3 may be made of a dielectric material. A contact portion (hereinafter, also referred to as a protrusion) 4 with the object 1 is formed on the suction surface of the suction portion 3, and a portion other than the protrusion 4 is a non-contact portion (recess) 5.

In this embodiment, the bipolar electrostatic chucking device is shown. However, means for grounding the object (semiconductor wafer) 1 is provided, or one or more of the plurality of contact portions 4 are provided. By using a conductive material for the portion, a single-pole type electrostatic adsorption device can be obtained. Although FIGS. 1 and 2 show examples of the transfer arm, the present invention is not limited to an apparatus using such a transfer arm, for example, an inspection apparatus such as a scanning electron microscope for length measurement. The present invention is effective for all devices that hold and fix a semiconductor wafer or the like using an electrostatic suction device such as a device, a sputtering device, a CVD device, an ion implantation device, and an EB drawing device. When the present invention is applied to an electrostatic suction device having a large area for flattening the wafer, the shape and distribution of the convex portions serving as the contact portions are arranged so as to be in a range where the warpage of the wafer can be prevented. Must be formed. The effects of the present invention are particularly high because the electrostatic suction devices in these devices have a large suction area.

When the switch 8 is turned on and a voltage is applied in the electrostatic chuck having the above-described configuration, the electrostatic force generated by the potential difference between the object (hereinafter referred to as a wafer) 1 and the electrode plate 6 of the electrostatic chuck is generated. Of wafer 1
Is adsorbed on the adsorbing surface side of the adsorbing portion 3 and is fixedly held in contact with the convex portion 4. This makes it possible to transfer the wafer 1 without causing a shift even in operations such as high-speed rotational movement, linear movement, and vertical movement.

Usually, the attraction surface of the electrostatic attraction device is made of an insulating dielectric material, and the material of the dielectric material is hard material S
_{iC, Al 2 O 3, Si} 3 N 4, AlN, Cr 2 O 3 or the like, a ceramic made by sintering. On the surface of these dielectrics, there are minute protrusions and minute burrs left during processing, and when the suction surface comes into contact with the wafer, minute slippage, that is, friction occurs, and the wear powder Become contaminants and contaminate the back surface of the wafer. Alternatively, even when the wafer is merely brought into contact with the suction surface, a phenomenon occurs in which foreign matter is transferred to the wafer side under the influence of the electric field, and the back surface of the wafer is contaminated.

As in this embodiment, irregularities are formed on the suction surface,
If the total area of the projections 4 that are the contact portions with the wafer is reduced, the friction that causes the generation of foreign matter as described above and the probability of transfer of foreign matter are reduced, and as a result, foreign matter adhering to the back surface of the wafer is reduced. Can be reduced. The smaller the contact area, the higher the effect of reducing the adhesion of foreign matter, but usually, the smaller the contact area, the lower the adsorption power,
There is a problem that the wafer cannot be fixedly held.
However, by limiting the size of the gap between the non-contact portion and the wafer to a small value, the non-contact portion can have an attractive force even in the non-contact portion. It is possible to obtain an appropriate suction force.

FIG. 3 shows the suction force F when the gap a = 0 between the object and the non-contact portion of the suction surface (hereinafter referred to as dielectric film).
_The result of calculating the relationship between the gap a and the attraction force F when _{0 is set} to 100% is shown. The suction force F is a force when it is assumed that there is no contact area except when the gap a = 0. Here, an example is shown in which a SiC electrostatic adsorber having a dielectric constant of 600 and 300 and a thickness of the adsorber dielectric of 2 mm is used. The attraction force F of the electrostatic attraction device is expressed by the following equation (1).

[0022]

(Equation 1)

Ε ₀ : dielectric constant of vacuum, V: potential difference between electrodes,
a: the gap between the substance to be adsorbed and the dielectric film; b: the thickness of the dielectric film; and κ: the relative dielectric constant.

As can be seen from FIG. 3, the suction force F decreases as the gap a increases, but the gap a is 9.0.
In the range of μm or less, in the electrostatic adsorbent having a relative dielectric constant of 300, the attraction force gradually decreases as the gap a increases, but retains about 20% of F ₀ . This decrease in the attraction force can be sufficiently compensated for by taking measures such as increasing the applied voltage to about twice in the above-mentioned example of the electrostatic attraction device having the relative dielectric constant κ = 300. This means that the magnitude of the electrostatic force is proportional to the square of the potential difference and inversely proportional to the square of the thickness of the dielectric of the attracting portion, that is, the electric field strength (potential difference /
Equation (1) indicating that it is proportional to the square of the thickness of the dielectric part of the suction part)
It is clear from. The thickness of the dielectric of the attraction portion is problematic in terms of strength of the electrostatic attraction body itself and withstand voltage, but the thickness may be changed as much as possible to secure the attraction force.

The smaller the gap between the object to be adsorbed and the dielectric film is, the larger the attraction force can be obtained. However, as shown in FIG. Is larger than the gap a between the wafer 1 and the suction part 3 of the electrostatic suction body.
In the case where the foreign matter is present between the two, the foreign matter adheres to the back surface of the wafer. Current,
Particles targeted by foreign material management standards in semiconductor manufacturing have a diameter of about 0.2 to 0.3 μm or more,
In addition, foreign substances having a large particle diameter have been reduced due to the progress of clean technology due to miniaturization of semiconductor manufacturing processes. That is, when the electrostatic adsorbent is adsorbed on the wafer, the foreign object having a particle diameter of about 0.2 to 0.3 μm, which is most frequently present, is prevented from adhering to the wafer. Can be reduced. Therefore, in the present embodiment, as shown in FIG. 5, foreign matter having a diameter of about 0.2 to 0.3 μm enters into the concave portion of the adsorption surface of the electrostatic adsorption body,
A gap was formed between the wafer and the dielectric film to such an extent that it could not adhere to the wafer. Furthermore, in consideration of the processing accuracy when forming irregularities on the surface and the relationship with the surface roughness, etc., in reality,
It is desirable that the gap a between the object to be adsorbed and the dielectric film in the non-contact portion when the object to be adsorbed is 0.35 μm or more.

On the basis of the calculation by the equation (1), there may be a state where there is a gap between the adsorption surface and the object to be adsorbed, that is, the contact area may be zero. Since it is impossible to make 0 be 0, a contact area that is as close as possible to 0 and that can hold an object to be adsorbed is required. FIG. 6 shows the relationship between the gap a between the object to be adsorbed and the dielectric film and the attraction force F when the contact area is reduced. An example of the electrostatic suction device under the same conditions as in FIG. 3 was used, and similarly, when the gap a between the object to be sucked and the dielectric film was 0 and the contact area was 100%, the suction force F ₀ was 100%. For example, gap a = 2.0 μm
, The suction force obtained assuming that there is no contact area is 59.2% of the suction force F ₀ when the original gap a = 0.
(FIG. 3), as shown in FIG. 6, when the contact area ratio is 10%, the attraction force is 6% at the time of full contact without any gap.
It becomes 3.3%. Further, the contact area ratio was further reduced to 1
%, It is 59.6%. As described above, when the contact area is reduced, the attraction force is reduced, but the reduction is slight. This is because the attraction force of the non-contact portion is secured by narrowing the gap between the wafer and the dielectric film.

According to FIG. 6, even when the gap a between the object to be adsorbed and the dielectric film is set to 9 μm and the contact area ratio is set to 1%, if the dielectric having the relative permittivity κ = 300 is used, It can be seen that about 20% of the attraction force in the case of contact can be generated.
If about 20% of the attraction force in the case of full surface contact can be generated, there is no problem in attracting the wafer. In other words, by appropriately selecting the relative dielectric constant of the dielectric, the applied voltage, and the like, even when the gap a between the object to be adsorbed and the dielectric film is 9 μm and the contact area ratio is 1%, it is sufficient. It can be seen that a high suction force can be generated.

Since the number of foreign particles adhering to the wafer tends to be proportional to the contact area between the wafer and the suction portion, the area of the contact portion (convex portion) of the suction portion is 0.1% within a range capable of holding the wafer.
Foreign matter adhering to the back surface of the wafer can be reduced by reducing the size as small as possible to about 0.01%. Also,
In order to effectively reduce a large amount of foreign substances adhering to the back surface of the wafer by electrostatic attraction, it is desirable that the area of the contact portion with the wafer is less than 10% of the area of the attraction surface.

Therefore, in this embodiment, the total area of the contact portion 4 is set to less than 10% of the area of the suction surface 3, and at the same time, the gap between the non-contact portion 5 and the wafer 1 is set to 0.35 to 9.0 μm. .
Even if the area of the contact portion 4 is reduced, the wafer 1 is suctioned by using the suction force of the non-contact portion 5 to generate a necessary suction force and greatly reduce foreign matter adhering to the back surface of the wafer. Was completed.

The shape of the contact portion 4 of the suction surface is as shown in FIG. 1 within a range in which the wafer does not bend according to the suction force of the electrostatic suction body, the area of the suction surface, the type of the wafer, and the like. In addition to the circular island shape, various shapes such as a polygonal island shape, a parallel or lattice shape, and a radial linear shape can be used.

FIG. 7 is a cross sectional view showing a second embodiment of the present invention. FIG. 7 shows an example of a procedure for forming irregularities on the suction surface of the electrostatic attraction body, and is a diagram in a case where the irregularities on the suction surface are formed by etching. First, a mask 10, which is a pattern of convex portions, is formed on the suction surface of the suction section 3, and etching is performed. Since only the portion without the mask is etched to form a concave portion, when the mask is removed, unevenness is formed with the portion where the mask 10 was present as a convex portion. Since etching conditions may be selected depending on the material of the dielectric, processing can be performed by either dry etching or wet etching.

FIG. 8 is a cross-sectional view showing a third embodiment of the present invention. FIG. 8 shows another example of the procedure for forming the irregularities on the adsorption surface of the electrostatic adsorption body. In this case, the irregularities on the adsorption surface of the electrostatic adsorption device are formed by sputtering or CVD. First, a mask 10 ′, which is a pattern of convex portions, is attached on the suction surface, and a film forming process is performed by sputtering or CVD, and a convex portion serving as a contact portion with the wafer 1 is formed in a portion without the mask. Materials used for the film forming process include SiC, Al ₂ O ₃ , and Si ₃ , which are dielectrics constituting the suction unit of the electrostatic suction device.
The same material as the ceramic such as N ₄ , AlN, Cr ₂ O _3, or a different material may be used. As long as it is a high-purity and thermally stable thin film, either a semiconductor film or an insulating film may be used. As a material having little influence on contamination of the wafer, a silicon thin film such as amorphous silicon or polycrystalline silicon or SiO _{2 is used.} And the like. Further, if a ferroelectric substance having a large relative permittivity is used for forming the contact portion, a large attraction force can be obtained. Conversely, the contact portion may be formed of a material having no attraction force. If a material that generates low dust with respect to friction with the wafer, for example, a material such as amorphous diamond or polycrystalline diamond can be used, dust generated at the time of contact can be suppressed, so that contamination of the wafer can be reduced. it can.

In the above embodiment, the electrode is mounted on the dielectric. On the contrary, a dielectric film is laminated on the electrode plate, and a non-contact portion and a contact portion are formed on the dielectric surface at the film formation stage. Irregularities may be formed.

[0034]

As described above, according to the present invention, since the contact area of the adsorption surface of the electrostatic attraction device with the object to be adsorbed is greatly reduced, the object to be adsorbed (sample) of the electrostatic attraction device is reduced. Foreign matter adhering to the back surface of the object to be adsorbed due to adsorption can be reduced, and finally, contamination of the object to be adsorbed can be reduced.

[Brief description of the drawings]

FIG. 1 is a front view showing a first embodiment of the present invention.

FIG. 2 is a cross-sectional view showing the first embodiment of the present invention.

FIG. 3 is a graph showing a relationship between a gap a between an object to be adsorbed and a dielectric film and an attraction force F in the example of the present invention.

FIG. 4 is an enlarged sectional view showing an example of the prior art.

FIG. 5 is an enlarged view showing a part of the first embodiment of the present invention.

FIG. 6 is a graph showing a relationship between a gap a between an object to be adsorbed and a dielectric film and an attraction force F using a contact area ratio as a parameter.

FIG. 7 is a cross sectional view showing a second embodiment of the present invention.

FIG. 8 is a cross sectional view showing a third embodiment of the present invention.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 Semiconductor wafer 2 Electrostatic attraction device 3 Suction surface 4 Contact part (convex part) 5 Non-contact part (depressed part) 6.6 'electrode plate 7 Power supply 8 Switch 9 Lead wire 10.10' Mask 100 Electrostatic adsorption body

Claims (11)

[Claims] 1. An electrostatic adsorber comprising an electrode plate and a dielectric layered thereon, wherein a potential difference is generated between the electrode plate and the object to be adsorbed, whereby the object to be adsorbed is adsorbed on the adsorption surface of the dielectric. On the surface of the adsorption surface of the body, a convex portion serving as a contact portion with the object to be adsorbed and a concave portion serving as a non-contact portion when the object is adsorbed are formed, and the contact area of the contact portion with the object to be adsorbed is defined as the area of the adsorption surface. An electrostatic adsorbent characterized by being less than 10%. 2. An electrostatic attraction body comprising an electrode plate mounted on a dielectric and causing a potential difference between the electrode plate and the object to be attracted to attract the object to be attracted to the attraction surface of the dielectric. On the surface of the adsorption surface of the body, a convex portion serving as a contact portion with the object to be adsorbed and a concave portion serving as a non-contact portion when the object is adsorbed are formed, and the contact area of the contact portion with the object to be adsorbed is defined as the area of the adsorption surface. An electrostatic adsorbent characterized by being less than 10%. 3. An electrostatic attraction body comprising a dielectric material laminated on an electrode plate, wherein a potential difference is generated between the electrode plate and the attraction object to cause the attraction object to be attracted to the attraction surface of the dielectric material. On the surface of the adsorbing surface of the body, a convex portion serving as a contact portion with the object to be adsorbed when the object is adsorbed and a concave portion serving as a non-contact portion are formed. Characterized in that the distance between them is 0.35 to 9.0 μm. 4. An electrostatic attraction member mounted on an electrode plate on a dielectric and causing a potential difference between the electrode plate and the attraction object to attract the attraction object onto the attraction surface of the dielectric material, On the surface of the adsorbing surface of the body, a convex portion serving as a contact portion with the object to be adsorbed when the object is adsorbed and a concave portion serving as a non-contact portion are formed. Characterized in that the distance between them is 0.35 to 9.0 μm. 5. The electrostatic adsorbent according to claim 1, wherein a distance between the object and the bottom of the non-contact portion is 0.35 to 9.0 μm when the object is adsorbed. Characteristic electrostatic adsorbent. 6. The electrostatic attraction body according to claim 1, wherein the surface of the attraction surface serving as a contact portion and a non-contact portion with the object to be attracted is formed on the dielectric by etching. An electrostatic attraction body characterized in that it is a material. 7. The electrostatic attraction body according to claim 1, wherein irregularities on the surface of the attraction surface, which are a contact portion and a non-contact portion with the object, are formed on the dielectric surface by sputtering or CVD. An electrostatic adsorbent formed by partially forming a film. 8. The electrostatic adsorbent according to claim 7, wherein the convex portion serving as a contact portion of the surface of the adsorption surface with the object to be adsorbed is made of a material different from a dielectric material on which the convex portion is formed. Characteristic electrostatic adsorbent. 9. An electrostatic attraction member formed to include a dielectric to which an electrode plate is attached and adsorbing an object to be attached to the dielectric by a potential difference generated at the dielectric by a voltage applied through the electrode plate. A power supply connected to the electrode plate via a lead wire, and a switch interposed on the lead wire;
An electrostatic attraction device comprising: an electrostatic attraction device, wherein the electrostatic attraction member is the electrostatic attraction member according to claim 1. 10. A semiconductor manufacturing apparatus comprising an electrostatic attraction device for attracting and holding a semiconductor wafer, wherein the electrostatic attraction device is the electrostatic attraction device according to claim 9. . 11. A semiconductor inspection apparatus comprising an electrostatic chuck for holding a semiconductor wafer by suction, wherein the electrostatic chuck is the electrostatic chuck according to claim 9. .