JPH10229245A - Semiconductor laser system - Google Patents

Abstract

PROBLEM TO BE SOLVED: To make feasible high precious characteristics evaluation using a chip tester in a unit laser even in a laser with a modulator, by a method wherein a redundant region creating the electrically short-circuit state in the other semiconductor element is formed on the part to be removed in the case of separating a chip adjacent to respective chips in a bar state. SOLUTION: The optical characteristics in a chip state are measured by impressing an LD 21 with a voltage by applying a probe of a chip tester used in a unit laser. In such a case, since a modulator 231 is brought into short-circuit state by the redundant region 24 through the intermediary of a bonding pad part 21 connected thereto, thereby creating the impressed state of 0V, i.e., in an off state. Accordingly, the optical characteristics of the laser with a modulator can be precisely measured without being affected by the modulator 231. Resultantly, the results of this measurement are similar to those of inspection after finishing the chip assembling step.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor laser device constituting an optical device used as a light source for optical communication or the like, and more particularly to a bar having a plurality of chips formed in a composite integrated semiconductor laser such as a laser with a modulator. The present invention relates to a semiconductor laser device having a structure that enables highly accurate characteristic evaluation in a state.

[0002]

2. Description of the Related Art For example, a single wavelength semiconductor laser (for example,
When a DFB laser alone is used, long-distance transmission becomes impossible due to spread of a spectrum or the like. Therefore, a laser with a modulator provided with an external modulator is usually used. Above all, a light source using a laser with a modulator (composite integrated semiconductor laser) in which an electroabsorption modulator and a single-wavelength semiconductor laser element are integrated is becoming mainstream.

FIG. 7 is a perspective view showing a conventional laser with a modulator. In the drawing, 10 is Au plating for forming a metal wiring, 12 is a groove for reducing the parasitic capacitance of the modulator 231, 21 is a bonding pad, 22 is a laser portion, 23 is a modulator portion, and 25 is a laser portion 22. A separation groove for separating the light from the modulator portion 23;
Denotes an electro-absorption type modulator, and 221 denotes a single wavelength semiconductor laser device.

As shown in FIG. 7, the laser with modulator has a laser (LD) portion 2 separated by a separation groove 25.
2 and a modulator portion 23, a single-wavelength semiconductor laser element 221 is formed in the LD portion 22, and an electro-absorption modulator 231 is formed in the modulator portion 23. . Grooves 12 for reducing the parasitic capacitance of the modulator 231 are formed on both sides of the modulator 231. Further, adjacent to the modulator 231, the modulator 231 and the A
Bonding pads 21 connected by the wiring of the u plating 10 are formed. This bonding pad 21
Is connected to a wiring for applying a voltage to the modulator 231 when a product is manufactured.

In the laser with a modulator, the semiconductor laser element 221 is driven by CW, and in this state, the voltage applied to the modulator 231 is subjected to a high-speed pulse operation, whereby the ON / OFF operation of the laser beam 41 is performed. Generally, the electroabsorption modulator 231 as described above has an MQW in its active layer.
The ON / OFF operation of the laser beam 41 is performed using a (multi-quantum-well) structure and utilizing the quantum confined Stark effect (change in the absorption coefficient of MQW due to an electric field).

Generally, a laser with a modulator is manufactured according to a manufacturing flow shown in FIG. That is, a crystal growth / process technique step of forming a laser element and a modulator on a semiconductor substrate (step S1), and a cleaving step of cleaving a wafer on which a laser chip with a modulator is formed in a bar state along a crystal plane. (Step S2), a chip test for evaluating various characteristics of the chip in a bar state (Step S3),
A chip separating step of separating individual chips from the bar (step S4), an assembling step of assembling a good chip identified in the chip test into a product (step S5), and an inspecting step of inspecting product characteristics (step S6) Through
We manufacture lasers with modulators.

Therefore, the laser with a modulator shown in FIG.
First, in step S1, for example, a crystal technique such as MOCVD and film formation, transfer, etching and the like are formed on an n-InP substrate in the same manner as when a single semiconductor laser including only a semiconductor laser element is manufactured. The LD part 22 and the modulator part 23 are formed by the process technology.
In the cleaving step of the next step S2, the wafer on which the laser with the modulator is formed is cleaved along the crystal plane in the same manner as when a single semiconductor laser is manufactured.
A bar state as shown in FIG. In the chip in the bar state, since the cleaved surface of the bar 31 forms a mirror, a laser with a modulator can be caused to oscillate by applying a current to the chip. Therefore, the chip test in step S3 is performed by applying a probe P to the semiconductor laser element 221 of the chip in the bar state, causing a current to flow, and causing laser oscillation, and evaluating the electrical and optical characteristics of the chip at this time. Is done. Thereafter, chip separation in step S4, chip assembly in step S5, and inspection in step S6 are performed.

[0008]

In the case of the conventional single laser, since only the semiconductor laser element is formed on the bar, the characteristics (particularly, the optical characteristics) are determined by the chip test performed in the bar state (step S3). And the inspection performed on the assembled product (step S6) did not change the result. However, in the case of a laser with a modulator (composite integrated semiconductor laser) as shown in FIGS. 7 and 8, when its characteristics are measured by a chip tester used for a single laser, the modulator 231 is in an OPEN state. As shown in FIGS. 10 (a) and 10 (b), there is a problem that the measurement result of the chip test is significantly different from the inspection result of the assembled product.

However, in such a case, the modulator section 2
If the probe P is also applied to the bonding pad 21 of No. 3 to apply a voltage to the modulator 231, the modulator 23
Since the open state of 1 can be avoided, the problem that the result of the chip test is significantly different from the result of the product inspection does not occur. However, as modulator 231, 2.
Since a high-speed operation of 5 Gb / s or more is required, the outer diameter of the bonding pad 21 is formed small, so that the position of the probe P and the pad 21 is displaced, the probe P damages the pad 21, and furthermore, the chip In practice, it is impossible to apply a voltage to the modulator 231 of the chip in the bar state, because problems such as poor test workability occur.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems. Even in a composite integrated semiconductor laser such as a laser with a modulator, a plurality of chips are formed by using a chip tester used in a single laser. An object of the present invention is to provide a semiconductor device capable of performing highly accurate characteristic evaluation in a formed bar state.

[0011]

SUMMARY OF THE INVENTION A semiconductor laser device according to the present invention is a bar-shaped semiconductor laser in which a plurality of integrated semiconductor laser chips formed by integrating a semiconductor laser element and another semiconductor element are formed. In the device,
In a portion adjacent to each of the chips in the bar state and removed at the time of chip separation, a redundant region in which the other semiconductor element is electrically short-circuited with another semiconductor element in the adjacent one of the chips. It is characterized by being formed by being connected by wiring.

Further, in the semiconductor laser device according to the present invention, in the above-described semiconductor laser device, the redundant region includes a p-electrode and an n-type electrode provided in the semiconductor laser device.
It is characterized in that the electrode and the electrode are electrically short-circuited.

Further, the semiconductor laser device according to the present invention is a bar-shaped semiconductor laser device in which a plurality of composite integrated semiconductor laser chips obtained by integrating a semiconductor laser element and another semiconductor element are provided. A probe pad for testing the chip is connected to the other semiconductor element in the adjacent chip by wiring to a portion other than the chip formation region in the bar state,
The other semiconductor element in each of the chips is connected to another semiconductor element in a chip adjacent to the chip by wiring.

[0014]

BEST MODE FOR CARRYING OUT THE INVENTION

Embodiment 1 FIG. FIG. 1 is a plan view showing a semiconductor laser device according to a first embodiment of the present invention, FIG. 2 is a cross-sectional view of an AA ′ portion in a modulator portion 23 in FIG. 1, and FIG. 3 is an LD portion 22 in FIG. FIG. 4 is a cross-sectional view of a portion BB ′ in FIG. In these figures, 1 is an n-InP substrate, 2 is an MQW active layer, 3 is an S.P. I-InP block layer, 4 is an n-InP block layer, 5 is S.I. I-InP block layer, 6 is pI
nP second cladding layer, 7 is a p-InGaAs contact layer, 8 is a SiO ₂ film, 9 is a p electrode, 10 is Au plating,
11 is an n-electrode, 12 is a groove for reducing the parasitic capacitance of a modulator or a semiconductor laser, 16 is a first cladding layer of p-InP, 21 is a bonding pad portion, 22 is a semiconductor laser (LD) portion, and 23 is a modulation. Modulator part, 24 is a redundant area for shorting the modulator, 31 is a bar obtained by cleaving the wafer, 91 is redundant wiring connecting the modulator and the redundant area,
Reference numeral 221 denotes a single wavelength semiconductor laser device (LD), and 231 denotes an external modulator.

The semiconductor laser device according to the first embodiment is shown in FIG.
As shown in FIG. 7, a chip forming portion of a laser with a modulator having an LD portion 22 and a modulator portion 23, and a modulator 231.
Are in a bar state in which the redundant portions in which the redundant regions 24 for short-circuiting are formed are alternately formed.

The modulator section 23 includes a modulator 231 and
It has a bonding pad portion 21, and the bonding pad portion 21 is connected to the modulator 231 by Au plating 10. Further, the redundant area 24 formed in the redundant portion
Is a bonding pad portion 2 of one adjacent chip.
1 and redundant wiring 91.

The modulator 231 includes, as shown in FIG.
An MQW active layer 2, a p-InP first cladding layer 16, a p-InP second cladding layer 6, a p-InP
An InGaAs contact layer 7 is sequentially formed, and the above MQ
The W. active layer 2 and a part of the p-InP first cladding layer 16 have S.P. I-InP block layer 3, n-InP block layer 4, S.I. It has a layer structure in which the I-InP block layer 5 is buried. Also, the modulator 231
In order to reduce the parasitic capacitance of the modulator 231, grooves 12 reaching the n-InP substrate 1 are formed on both sides. An SiO ₂ film 8 serving as an insulating protective film is formed on the entire surface including the groove 12. This SiO ₂ film 8
Is opened above the p-InGaAs contact layer 7, and the SiO ₂ film 8 including this opening is formed.
Above, a p-electrode 9 extending to the redundant region 24 and an Au plating 10 for wiring to an adjacent bonding pad portion 21 are sequentially formed. Note that an n-electrode 11 is formed on the back surface of the n-InP substrate 1.

The bonding pad portion 21 is shown in FIG.
As shown in the above, on the n-InP substrate 1, the above S.P.
I-InP block layer 3, n-InP block layer 4,
S. It has a layer structure in which an I-InP block layer 5, a p-InP second cladding layer 6, a p-InGaAs contact layer 7, an SiO ₂ film 8, a p-electrode 9, and an Au plating 10 are sequentially formed. A wiring metal is bonded to the bonding pad portion 21 when a product is formed, and the modulator 2 connected by the Au plating 10 is formed.
A voltage is applied to 31.

As shown in FIG. 2, the redundant area 24
The SiO ₂ film 8 formed on the n-InP substrate 1 is opened, and the p electrode 9 is formed so as to cover the opening. That is, this redundant area 24
-The p-electrode 9 and the n-electrode 11 are short-circuited via the InP substrate 1. The redundant region 24 can be formed at the same time in the process of manufacturing a laser with a modulator.

As shown in FIG. 3, the LD 221 has substantially the same layer structure as that of the modulator 231 and has an n-InP
MQW active layer 2, p-InP first cladding layer 16, p-InP second cladding layer 6, p-InGaAs
s contact layer 7 is sequentially formed, and the MQW active layer 2
And a part of the p-InP first cladding layer 16,
S. I-InP block layer 3, n-InP block layer 4, S.I. It has a layer structure in which the I-InP block layer 5 is buried. Also, on both sides of LD221, LD2
In order to reduce the parasitic capacitance 21, a groove 12 reaching the n-InP substrate 1 is formed, and an SiO ₂ film 8 serving as an insulating protective film is formed on the entire surface including the groove 12. The SiO ₂ film 8 has an opening at the top of the p-InGaAs contact layer 7, and further includes a p electrode 9 and an Au plating 10 on the opening including this opening. On the back surface of the n-InP substrate 1, an n-electrode 11 is formed.

Next, a method of manufacturing the semiconductor laser device will be described. FIG. 4 and FIG. 5 are cross-sectional views showing manufacturing steps in the modulator section 23 and the redundant region 24 of the semiconductor laser device.

In order to fabricate the modulator portion 23 of the semiconductor device according to the first embodiment, first, as shown in FIG. 4A, a crystal growth method such as MOCVD is formed on the n-InP substrate 1. , MQW active layer 2 and p-InP first cladding layer 16 are crystal-grown, a predetermined region is removed by side etching, and S.P. I-InP block layer 3, n-InP block layer 4, S.I. After selective crystal growth of the I-InP block layer 5, p-InP
The second cladding layer 6 and the p-InGaAs contact layer 7 are crystal-grown.

Next, the wafer on which the crystal growth has been completed is etched to form a groove 12 for reducing the parasitic capacitance of the modulator 231 as shown in FIG.
It is formed so as to reach the nP substrate 1. At this time, a peripheral portion (right side portion in FIG. 4B) of the bonding pad portion 21 is also removed at the same time, and a redundant region 24 is formed in the removed portion later. Accordingly, since the groove 12 is formed to a depth reaching the n-InP substrate 1, the groove 12 is formed at the peripheral portion (the right portion in FIG. 4B) of the bonding pad portion 21 which is removed at the same time as forming the groove 12. Also reaches the n-InP substrate 1.

After that, FIG.
As shown in (c), an SiO ₂ film 8 serving as an insulating protective film is formed on the entire surface.

Then, as shown in FIG.
31 so that a voltage can be applied to p-InG
An opening 81 is formed by removing a portion of the SiO ₂ film 8 on the aAs contact layer 7 by etching. At this time,
At the same time, the peripheral portion of the bonding pad portion 21 (FIG. 5)
An opening 82 is formed by removing a part of the SiO ₂ film 8 in the right part of FIG. The reason why such an opening 82 is formed is to form a redundant region 24 in this portion which will be in an electrically short state later.

Next, as shown in FIG.
A p-electrode 9 for connecting the bonding pad 31 to the bonding pad portion 21 is formed. At this time, by extending the p-electrode 9 to the opening 82, the redundant region 24 can be formed.

By the way, for example, if the modulator 231 is 10G
When high-speed pulse driving is performed at b / s, the bonding pad portion 21 needs to have a very small outer diameter of 50 μm □ at the maximum. The capacitance of the bonding pad portion 21 is about 0.2 pF, and the lead-out portion of the p-electrode 9 from the bonding pad portion 21 to the redundant region 24 (the portion corresponding to the redundant wiring 91 in FIG. 1) is 0.1 pF.
It is about. Therefore, the capacity of the redundant wiring 91 is very small as compared with the capacity of the modulator 231 and the bonding pad part 21, and therefore, the lead-out line to the redundant area 24, that is, the redundant wiring 91, has a high speed operation of the modulator 231. There is no particular problem for. In particular, by a high-precision process using a round wafer or the like, the metal width serving as the redundant wiring 91 can be made to be several μm.

Next, after the formation of the p-electrode 9, FIG.
As shown in FIG. 2C, when the Au plating 10 for electrically connecting the modulator 231 and the bonding pad portion 21 is formed, and the n-electrode 11 is formed on the back surface of the n-InP substrate 1, FIG. The modulator section 23 shown and the redundant area 24
Is completed.

The redundant area 24 formed as described above
The p-electrode 9 and the n-electrode 11 are electrically shorted via the n-InP substrate 1. Therefore, since the modulator section 23 is electrically connected to the redundant region 24 through the redundant wiring 91, that is, the p electrode 9, the redundant region 2 in which the p electrode 9 and the n electrode 11 are electrically short-circuited.
4 causes an electrical short.

On the other hand, the LD portion 22 shown in FIG. 3 is manufactured through substantially the same process as the manufacturing of the modulator portion 23 by not forming the redundant region 24 in the manufacturing process of the modulator 231. Is done.

Next, after the above-described wafer process is completed, the wafer is cleaved along a crystal plane into a bar state in which chip forming portions and redundant portions are formed alternately, and the semiconductor laser device shown in FIG. Complete.

As described above, according to the semiconductor laser device (laser with modulator) according to the first embodiment, when a chip test is performed, the LD portion 22 of the semiconductor laser device in a bar state as shown in FIG. By applying a probe of a chip tester used in a conventional single laser, LD221
By applying a voltage to, there is an effect that optical characteristics in a chip state can be measured with high accuracy.
That is, since the modulator 231 is short-circuited by the redundant region 24 via the bonding pad portion 21 connected thereto, the modulator 231 is in the same state as the state where a voltage of 0 V is applied, that is, the modulator 231 is in the OFF state ( Transmission). Therefore, by applying a voltage to the LD 221 by applying a probe thereto, the optical characteristics of the laser with a modulator can be accurately measured without being affected by the modulator 231. The optical characteristics of the product can be evaluated with high accuracy in a chip state because it is the same as the inspection result of the product. The redundant region 24 of the semiconductor laser device in the bar state is formed adjacent to the chip forming region. When the bar 31 is separated into individual chips after the chip test, the redundant region 24 is The laser chip with the modulator can be separated and removed, and the chip separated in this way has the same form as the conventional laser with a modulator. On the chip, the lead metal (redundant wiring 91) is insulated on the SiO ₂ film 8 and its metal width (line width of the redundant wiring 91) is as small as several μm. 0.1 parasitic capacitance
Since it is only about pF, it has no influence on the high-speed operation of the laser.

Embodiment 2 FIG. In the first embodiment, the case in which the chip test probe is applied only to the semiconductor laser element 221 to evaluate the laser characteristics has been described. However, in the semiconductor laser device of the second embodiment, the modulator portion 23 is used.
The laser characteristics can be evaluated by applying a voltage to the laser.

FIG. 6 is a plan view showing a semiconductor laser device according to the second embodiment. In FIG. 6, 10 is Au
Plating, 21 a bonding pad portion, 22 a semiconductor laser (LD) portion, 23 a modulator portion, 31 a bar,
32 is a probe pad, 33 is a redundant wiring, 221 is a single wavelength semiconductor laser device, and 231 is an external modulator.

The semiconductor laser device of the second embodiment is
As shown in FIG. 6, a pad 32 for a probe is provided at a portion corresponding to the end of one bar 31 independently of the laser chip with a modulator.
And redundant wiring 33. Embodiment 2
The LD portion 22 and the modulator portion 23 in the semiconductor laser device according to the first embodiment have the same layer structure as the LD portion 22 and the modulator portion 23 in the first embodiment.
The probe pad 32 has the same layer structure as the bonding pad portion 21 except that the Au plating 10 is not formed.

In order to operate the modulator 231 at high speed, as described in the first embodiment, the size of the bonding pad portion 21 which is a wire bonding portion for the modulator needs to be 50 μm □ or less. . Therefore, in the semiconductor laser device shown in the first embodiment, the probe is accurately applied to the bonding pad portion 21 without damaging the bonding pad portion 21 (especially, it is not impossible to strike a wire. ) It is not easy to apply a probe. Therefore, the bond pad portion 2 formed in the modulator portion 23
It is almost impossible to apply a voltage to the modulator 231 by applying a probe to 1.

However, in the semiconductor laser device according to the second embodiment, as shown in FIG. 6, the modulator 231 is provided with the dedicated probe pad 32 electrically connected by the redundant wiring 33. , This pad 32
To apply a voltage to the modulator 23. Therefore, for example, the probe pad 3
2 is applied to the n-electrode 11 of the semiconductor laser device.
By setting the same potential as above, the modulator 231 can be in the same state as the short-circuit state, that is, the modulator 231 can be in the OFF state (transmission). In this state, if a probe is applied to the LD 221 to apply a voltage, The characteristics of the modulator-equipped laser can be measured without being affected by the modulator 231. In this case, the chip test can be performed in a state similar to that of the semiconductor laser device of the first embodiment. Also, by applying a predetermined voltage to the probe applied to the probe pad 32,
1 can be turned on (absorbed), and in this state L
If a voltage is applied by applying a probe to D221, the extinction characteristic of the laser with a modulator can also be measured. In the case of the semiconductor laser device according to the second embodiment, when separating the chip from the bar state, the probe pad 32 can be removed, and the redundant wiring 33 connecting the chips can be cut by chip separation. Then, a laser having almost the same form as that of a conventional laser with a modulator can be obtained.

The above-mentioned redundant wiring 33 can be formed simultaneously with the formation of the p-electrode 9 during the wafer process, and after the completion of the wafer process, the wiring between the modulator portions 23 is wired in the air by wire or the like. It is also possible.

[0039]

According to the semiconductor laser device of the present invention, there is provided a semiconductor laser device in a bar state in which a plurality of composite integrated semiconductor laser chips obtained by integrating a semiconductor laser element and another semiconductor element are formed. A redundant area adjacent to each of the chips in the bar state and removed at the time of chip separation has a redundant area for electrically short-circuiting the other semiconductor element. In this case, the semiconductor device is short-circuited by the redundant region to stop the function of the semiconductor device. In this case, the probe is applied only to the semiconductor laser element of the composite integrated semiconductor laser with the chip tester used for the single laser. By applying, the optical characteristics of the semiconductor laser device can be measured without being affected by the semiconductor element, and the measurement result is the same as the characteristics of the product after chip assembly. In such a state, there is an effect that a laser which can accurately measure laser characteristics of a product after chip assembly is obtained. Further, since the redundant region of the semiconductor laser device in the bar state is formed in a portion that can be removed at the time of chip separation, a chip separated from the bar state has the same form as a conventional laser with a modulator. There is an effect that it can be.

Further, in the semiconductor laser device according to the present invention, in the semiconductor laser device described above, the redundant region includes a p-electrode and an n-type electrode provided in the semiconductor laser device.
The electrode and the electrode are electrically short-circuited, whereby the redundant region can be easily formed by short-circuiting the p-electrode and the n-electrode when the semiconductor laser device is manufactured. In addition, as in the case of the semiconductor laser device described above, the laser characteristics of the product after chip assembly can be accurately measured in the chip state, and the chip separated from the bar state has the conventional modulation characteristics. There is an effect that a laser having the same form as that of a laser with a container can be obtained.

Further, according to the semiconductor laser device of the present invention, a semiconductor laser device in a bar state formed by forming a plurality of composite integrated semiconductor laser chips obtained by integrating a semiconductor laser element and another semiconductor element. At
A probe pad for testing the chip is formed in a portion other than the chip formation region in the bar state by being connected to the other semiconductor element in the adjacent chip by wiring, and each chip is formed. The other semiconductor element in the above is characterized by being connected to another semiconductor element in a chip adjacent to the chip by wiring, whereby a probe is applied to the probe pad, By applying the same voltage as the electrode potential of the semiconductor laser device to the semiconductor laser device, the semiconductor device is short-circuited, that is, the semiconductor device is turned off (transmitted), and the optical characteristics of the semiconductor laser device are measured without being affected by the semiconductor device. The semiconductor device can be turned on (absorbed) by applying a predetermined voltage to the probe pad, and the semiconductor laser can be turned on. It is possible also to measure the extinction characteristic of the device, there is an effect that it is possible at the time of chip testing to evaluate the laser characteristics, such as electrical and optical properties of the product after assembly more accurately. Further, since the probe pad for the chip test is formed in a portion other than the chip forming region, the probe pad is separated and removed at the time of chip separation, so that the chip separated from the bar state is a conventional modulation pad. There is an effect that a laser having the same form as that of the laser with the container can be obtained.

[Brief description of the drawings]

FIG. 1 is a plan view showing a semiconductor laser device (a laser with a modulator) according to a first embodiment of the present invention.

FIG. 2 is a sectional view taken along the line AA ′ in FIG.

FIG. 3 is a cross-sectional view taken along the line BB 'of FIG.

FIG. 4 is a cross-sectional view showing a manufacturing step in the modulator part of the first embodiment.

FIG. 5 is a cross-sectional view showing a manufacturing step in the modulator part of the first embodiment.

FIG. 6 is a plan view showing a semiconductor laser device (a laser with a modulator) according to a second embodiment of the present invention.

FIG. 7 is a perspective view showing a conventional compound semiconductor laser (modulator-equipped laser) including a semiconductor laser element and a modulator.

FIG. 8 is a plan view showing a bar state of a conventional laser with a modulator.

FIG. 9 is a flowchart showing a manufacturing flow of a semiconductor laser (including an integrated semiconductor laser including a semiconductor laser element such as a laser with a modulator and another semiconductor element).

FIG. 10 shows optical characteristics (p-I characteristics) of a laser with a modulator.
3 is a graph showing a comparison before and after chip assembly in FIG.

[Explanation of symbols]

1 n-InP substrate, 2 MQW active layer, 3S. I-
InP block layer, 4 n-InP block layer, 5
S. I-InP block layer, 6 p-InP second cladding layer, 7 p-InGaAs contact layer, 8 SiO
₂ film, 9 p electrode, 10 Au plating, 11 n electrode,
12 groove, 16 p-InP first cladding layer, 21 bonding pad portion, 22 semiconductor laser (LD) portion, 23 modulator portion, 24 redundant region, 31 bar obtained by cleaving wafer, 32 probe pad, 33
Redundant wiring, 91 redundant wiring, 221 single wavelength semiconductor laser element (LD), 231 external modulator.

Claims (3)

[Claims] 1. A semiconductor laser device in a bar state formed by forming a plurality of composite integrated semiconductor laser chips obtained by integrating a semiconductor laser element and another semiconductor element, wherein the semiconductor laser device is adjacent to each of the chips in the bar state. In a portion removed at the time of chip separation, a redundant region in which the other semiconductor element is electrically short-circuited is formed by being connected to another semiconductor element of one of the adjacent chips by wiring. A semiconductor laser device, comprising: 2. The semiconductor laser device according to claim 1, wherein the redundant region has a state in which a p-electrode and an n-electrode provided in the semiconductor laser device are electrically short-circuited. A semiconductor laser device characterized by the above-mentioned. 3. A semiconductor laser device in a bar state formed by forming a plurality of composite integrated semiconductor laser chips obtained by integrating a semiconductor laser element and another semiconductor element. A test probe pad for the chip is formed in a part other than the chip by being connected to the other semiconductor element in the adjacent chip by wiring, and the other semiconductor element in each chip is connected to the chip. A semiconductor laser device which is connected by wiring to another semiconductor element in a chip adjacent to the semiconductor laser device.