JPH10229076A - Liquid material vaporizer - Google Patents

Liquid material vaporizer

Info

Publication number
JPH10229076A
JPH10229076A JP2944697A JP2944697A JPH10229076A JP H10229076 A JPH10229076 A JP H10229076A JP 2944697 A JP2944697 A JP 2944697A JP 2944697 A JP2944697 A JP 2944697A JP H10229076 A JPH10229076 A JP H10229076A
Authority
JP
Japan
Prior art keywords
solvent
liquid
liquid material
container
containers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2944697A
Other languages
Japanese (ja)
Other versions
JP3106990B2 (en
Inventor
Naomi Yoshioka
尚規 吉岡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shimadzu Corp
Original Assignee
Shimadzu Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shimadzu Corp filed Critical Shimadzu Corp
Priority to JP09029446A priority Critical patent/JP3106990B2/en
Priority to KR1019980003226A priority patent/KR100345223B1/en
Priority to US09/021,153 priority patent/US6074487A/en
Publication of JPH10229076A publication Critical patent/JPH10229076A/en
Application granted granted Critical
Publication of JP3106990B2 publication Critical patent/JP3106990B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To easily perform not only a mixture ratio but also concentration adjustment such as dilution, etc. SOLUTION: Since this vaporizer is arranged so as to collect a liquid material led out of containers 2A-2D and a solvent in one place through liquid-sending lines 4A, 4B, 4C, and 4D by providing this with the same container 2D, used exclusively for a solvent to receive the solvent as those used for liquid material in addition to material containers 2A, 2B, and 2C to receive the liquid material, it becomes possible to easily change not only the rate of the fellow liquid material but also the dilution, etc., through the quantity of led-out material, without removing the containers 2A-2D one by one.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、半導体製造装置へ
の液体材料の供給等を好適に行い得るようにした液体材
料気化装置に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid material vaporizing apparatus capable of suitably supplying a liquid material to a semiconductor manufacturing apparatus.

【0002】[0002]

【従来の技術】半導体デバイスの製造工程で、膜質や成
膜速度、ステップカバレッジの点でスパッタ等に比べて
優れているとして、近年、MoCVD法が盛んに利用さ
れる様になった。このCVD用ガス供給方法には、バブ
リング法、昇華法等があるが、制御性、安定性の点で、
有機金属を溶剤に溶かし、反応層の直前で気化させる方
法が有力視されている。
2. Description of the Related Art In the manufacturing process of semiconductor devices, MoCVD has been widely used in recent years because it is superior to sputtering or the like in film quality, film forming speed, and step coverage. The gas supply method for CVD includes a bubbling method, a sublimation method, and the like, but in terms of controllability and stability,
A promising method is to dissolve the organic metal in a solvent and vaporize the organic metal immediately before the reaction layer.

【0003】[0003]

【発明が解決しようとする課題】ところで、そのための
従来の液体材料気化装置は、原料を溶剤に溶かして収容
する複数の材料容器と、各容器からの液体材料を1箇所
に集合させるための送液ラインとを備えた構成からな
る。しかしながら、単にこのような構成では、原料同士
の混合比率は送液ラインに流量制御弁等を配置すること
によって変えられるものの、全体を希釈若しくは濃厚に
する必要がある場合には、各容器を逐一取り外して溶剤
と原料の比率を変えなければならない。このため、作業
が煩雑であるほか、この種の液体材料は常温常圧で液体
であって容器内を開放したときに大気中の水分に触れる
と加水分解をおこすなど、取り扱いも極めて煩雑なもの
となっている。
A conventional liquid material vaporizer for this purpose comprises a plurality of material containers for accommodating raw materials dissolved in a solvent and a feeder for collecting the liquid material from each container into one place. And a liquid line. However, in such a configuration, the mixing ratio between the raw materials can be changed by arranging a flow control valve or the like in the liquid feed line. It must be removed and the ratio of solvent to raw material must be changed. For this reason, the work is complicated, and this kind of liquid material is liquid at normal temperature and normal pressure, and handling is extremely complicated, such as hydrolysis when exposed to moisture in the atmosphere when the container is opened. It has become.

【0004】本発明は、このような課題に着目してなさ
れたものであって、混合比のみならず混合液の濃度も容
易に可変とする液体材料気化装置を提供することを目的
としている。
The present invention has been made in view of such a problem, and has as its object to provide a liquid material vaporizer in which not only the mixing ratio but also the concentration of a mixed solution can be easily changed.

【0005】[0005]

【課題を解決するための手段】本発明は、かかる目的を
達成するために、次のような手段を講じたものである。
すなわち、本発明の液体材料気化装置は、複数の液体材
料を混合するための構成として、液体材料を溶剤に溶か
して収容する複数の材料容器と、前記液体材料に使用さ
れている溶剤と同一又は同種の溶剤を充填した溶剤専用
容器と、各容器からの液体材料及び溶剤を1箇所に集合
させるための複数の送液ラインとを設けたものである。
In order to achieve the above object, the present invention takes the following measures.
That is, the liquid material vaporizer of the present invention has a structure for mixing a plurality of liquid materials, a plurality of material containers for dissolving the liquid material in a solvent and containing the same, and the same or the same solvent as that used for the liquid material. It is provided with a dedicated solvent container filled with the same kind of solvent, and a plurality of liquid feed lines for collecting the liquid material and the solvent from each container at one place.

【0006】このようなものであると、溶剤専用容器か
ら適宜量の溶剤を送り込むことで混合液中に占める溶剤
の割合すなわち原料の割合を可変とすることができる。
したがって、本発明によると、容器内を一切開放するこ
となく、混合比は勿論のことその混合液全体の希釈度等
の濃度調整も有効に行うことが可能となる。この場合、
混合を適切に行うためには、各送液ラインによる液体材
料及び溶剤の集合位置の下流にミキサーを配置しておく
ことが好ましい。
[0006] In such a case, the proportion of the solvent in the mixed solution, that is, the proportion of the raw material can be made variable by feeding an appropriate amount of the solvent from the container dedicated to the solvent.
Therefore, according to the present invention, it is possible to effectively adjust not only the mixing ratio but also the concentration such as the degree of dilution of the whole mixture without opening the inside of the container at all. in this case,
In order to perform mixing appropriately, it is preferable to dispose a mixer downstream of the collecting position of the liquid material and the solvent by each liquid sending line.

【0007】液体材料又は溶剤を気化するための気化器
は、送液ライン上の集合位置の上流又は下流いずれに設
けることもできる。気化器の浄化を有効に行うために
は、前記溶剤専用容器を直接気化器の入口に導入する溶
剤移送ラインを設けておくことが好ましい。
A vaporizer for vaporizing a liquid material or a solvent can be provided either upstream or downstream of the collecting position on the liquid sending line. In order to effectively purify the vaporizer, it is preferable to provide a solvent transfer line for directly introducing the solvent-dedicated container into the inlet of the vaporizer.

【0008】[0008]

【実施例】以下、本発明の一実施例を、図面を参照して
説明する。図1に示す液体材料気化装置は、CVD成膜
装置の構成要素であるCVDリアクタ1に液体材料を混
合、気化して供給するためのもので、材料容器2A、2
B、2Cと、溶剤専用容器2Dと、送液ライン4A、4
B、4C、4Dとを具備してなる。
An embodiment of the present invention will be described below with reference to the drawings. The liquid material vaporizer shown in FIG. 1 is for mixing, vaporizing and supplying a liquid material to a CVD reactor 1 which is a component of a CVD film forming apparatus.
B, 2C, a dedicated solvent container 2D, and a liquid sending line 4A,
B, 4C and 4D.

【0009】材料容器2A、2B、2Cには、それぞれ
共通の溶剤を用いて原料を所定の割合で溶かした液体材
料A、B、Cが充填される。上記液体材料A、B、Cの
原料には、例えば強誘電体薄膜を成膜するのであればP
b、Zr、Tiなどが、また高誘電体薄膜を成膜するの
であればBa、Sr、Tiなどが、さらに超伝導薄膜を
成膜するのであればBi、Sr、Cuなどがそれぞれ用
いられる。勿論、原料の数に応じて用意する材料容器の
数が2個或いは4個以上になる事があるのは言うまでも
ない。
The material containers 2A, 2B, and 2C are filled with liquid materials A, B, and C in which raw materials are dissolved at a predetermined ratio using a common solvent. The raw materials of the liquid materials A, B, and C are, for example, P if a ferroelectric thin film is to be formed.
b, Zr, Ti, etc., Ba, Sr, Ti, etc. are used for forming a high dielectric thin film, and Bi, Sr, Cu, etc. are used for forming a superconducting thin film. Of course, it goes without saying that the number of material containers prepared according to the number of raw materials may be two or four or more.

【0010】溶剤専用容器2Dには、上記各液体材料
A、B、Cに用いているものと同一の溶剤Dが充填され
る。この場合、CVD処理に化学的影響を与えない範囲
で溶剤Dは必ずしも同一でなくてもよく、性質を共通に
する同種の溶剤を用いることもできる。送液ライン4A
〜4Dは、一端を各材料容器2A〜2C若しくは溶剤専
用容器2Dの液中に浸漬する位置に配設し他端を集合位
置Xに集合させてなるもので、この集合位置Xの上流に
それぞれ流量調節可能な比例バルブ5A、5B、5C、
5Dを介在させている。この実施例では送液ライン4
A、4B、4C、4D以外に外部供給ライン6A、6
B、6C、6D、パージライン7、バキュームライン8
及び溶剤バイパスライン9等を可能な限り配管を共用し
且つ配管の接点の周辺に多数のバルブ(図示省略)を組
み込んで構成しているものであり、上記送液ライン4
A、4B、4C、4Dは所要のバルブ開閉操作を通じて
図2中矢印a1、b1、c1、d1に沿ってそれぞれ容
器2A、2B、2C、2Dから集合位置Xへ送液される
ものである。
The solvent dedicated container 2D is filled with the same solvent D as that used for the liquid materials A, B, and C. In this case, the solvents D are not necessarily the same as long as they do not chemically affect the CVD process, and the same type of solvent having the same property can be used. Liquid sending line 4A
4D are arranged such that one end is immersed in the liquid of each of the material containers 2A to 2C or the solvent dedicated container 2D, and the other end is gathered at the gathering position X, and each is upstream of the gathering position X. Flow rate adjustable proportional valves 5A, 5B, 5C,
5D is interposed. In this embodiment, the liquid supply line 4
A, 4B, 4C, 4D, and external supply lines 6A, 6
B, 6C, 6D, purge line 7, vacuum line 8
And the solvent bypass line 9 and the like share a pipe as much as possible and incorporate a number of valves (not shown) around the contact point of the pipe.
A, 4B, 4C, and 4D are sent from the containers 2A, 2B, 2C, and 2D to the collecting position X along arrows a1, b1, c1, and d1 in FIG.

【0011】外部供給ライン6A〜6Dは、所要のバル
ブ操作を通じ、図3中矢印a2、b2、c2、d2に沿
って図外の供給源から各容器2A〜2Dの入口側に液体
材料A〜Cや溶剤Dを充填、補充するものである。パー
ジライン7は、各容器2A〜2Dに対して送液の為の液
面加圧を行い、或いは容器2A〜2D内、周辺管内のパ
ージを行うためのもので、液面加圧を行う場合には図2
中矢印eに沿って図外のN2やAr等の不活性ガスを各
容器2A〜2Dに供給する。また容器入口側の配管内及
び容器2内のパージを行う場合には図4中矢印fに沿っ
て不活性ガス供給源から容器出口側に不活性ガスを導入
する。さらに、容器入口側及び容器出口側の配管のパー
ジを行う場合は、図5中矢印gに沿って容器入口側から
容器2を介さず直接容器出口側を経て比例バルブ5A〜
5Dに向かい不活性ガスを送給する。
The external supply lines 6A to 6D are provided with liquid materials A to D from the supply source (not shown) along the arrows a2, b2, c2 and d2 in FIG. C and solvent D are charged and replenished. The purge line 7 is for performing liquid level pressurization for sending liquid to each of the containers 2A to 2D, or for purging the inside of the containers 2A to 2D and the peripheral pipes. Figure 2
Along the middle arrow e for supplying an inert gas such as an unshown N 2 and Ar in each container 2A-2D. When purging the inside of the pipe on the container inlet side and the inside of the container 2, an inert gas is introduced from the inert gas supply source to the container outlet side along the arrow f in FIG. Further, when purging the pipes on the container inlet side and the container outlet side, the proportional valves 5A to 5A through the container outlet side are directly passed from the container inlet side without passing through the container 2 along the arrow g in FIG.
The inert gas is supplied toward 5D.

【0012】バキュームライン8は、容器2A〜2D内
や周辺配管内の真空引きを行うためのもので、容器2A
〜2D内の真空排気を行う場合は図3及び図4における
矢印hに沿って各容器2A〜2D内を図外の真空ポンプ
で排気し、また周辺配管内の真空引きを行う場合は回路
上の各接点付近にある全てのバルブを開くことによって
比例バルブ5A〜5Dよりも上流側の全配管内の真空排
気を行うことができる。
The vacuum line 8 is used for evacuating the inside of the containers 2A to 2D and the surrounding pipes.
2D is evacuated by a vacuum pump (not shown) along the arrow h in FIG. 3 and FIG. By opening all the valves near each of the above-mentioned contacts, it is possible to evacuate all the piping upstream of the proportional valves 5A to 5D.

【0013】溶剤バイパスライン9は、容器出口側に位
置する配管内の溶剤洗浄を行うためのもので、図6中矢
印iに沿って溶剤専用容器2Dから導出した溶剤を各材
料容器2A〜2Cに向けて移送することができる。この
場合、各材料容器2A〜2Cはバキュームライン8を用
いて図中矢印hのように排気し、溶剤容器2Dはパージ
ライン7を用いて図中矢印kのように液面加圧する。
The solvent bypass line 9 is for cleaning the inside of a pipe located on the container outlet side. The solvent drawn out of the solvent exclusive container 2D along the arrow i in FIG. Can be transferred to In this case, the material containers 2A to 2C are evacuated using a vacuum line 8 as shown by an arrow h in the figure, and the solvent container 2D is pressurized by using a purge line 7 as shown by an arrow k in the figure.

【0014】このような構成に加え、図1に示す液体材
料気化装置は、上記集合位置Xよりも下流側に、流量を
制御する送液ポンプ10、液混合の為のミキサー11、
液体材料A〜C等を気化させる為の気化器12を設け、
これらを通過した後の混合ガスをCVDリアクター1に
供給するようにしている。ポンプ10には高精度で低脈
動の直列形ダブルプランジャポンプを採用しており、プ
ランジャが1ストロークする際の吸入時間内に、前述し
た各比例バルブ5A〜5Dが各々予め設定された混合比
に見合う配分時間づつ順次に開いてその液体材料又は溶
剤をプランジャに吸入させるものである。全流量は送液
ポンプ10の駆動回転数を通じて制御される。
In addition to the above structure, the liquid material vaporizer shown in FIG. 1 has a liquid feed pump 10 for controlling the flow rate, a mixer 11 for mixing the liquid,
A vaporizer 12 for vaporizing the liquid materials A to C, etc.,
The mixed gas that has passed through them is supplied to the CVD reactor 1. The pump 10 employs a high-precision, low-pulsation in-line type double plunger pump, and within the suction time when the plunger makes one stroke, each of the proportional valves 5A to 5D is set to a predetermined mixing ratio. The liquid material or the solvent is sequentially opened at appropriate distribution times so that the plunger sucks the liquid material or the solvent. The total flow rate is controlled through the driving speed of the liquid feed pump 10.

【0015】なお、前記溶剤専用容器2Dは、別途に気
化器洗浄用に設けた溶剤移送ライン13及び補助ポンプ
14を通じて溶剤を直接気化器12の入口に移送し得る
ようにしている。また、気化器12に外部からキャリヤ
ガス導入系路15を通じて不活性なキャリヤガスを導入
することも可能である。次に、本実施例の取扱方法につ
いて説明する。先ず空の容器2A〜2Dを取り付ける場
合には、各容器2A〜2Dが接続されるべき最寄りの配
管にそれぞれ継手zを介してそれらの入口側及び出口側
を接続する。次に、全てのバルブを開いてバキュームラ
イン8を作動させ、容器2A〜2D及び随所の配管内を
真空排気した後、図3の矢印a2〜d2に沿って各容器
2A〜2D内に液体材料A〜C及び溶剤Dを充填する。
そして、ポンプ10を作動させると共に、図2に矢印e
で示すパージライン7に沿って各容器2A〜2Dの入口
側に不活性ガスを導入し液面加圧を行うと、これらの容
器2A〜2Dに充填されている液体材料A〜C及び溶剤
Dが同図中矢印a1〜d1で示すように送液ライン4A
〜4Dに送り出され、比例バルブ5A〜5Dを経て予め
定めた所定の混合比で集合位置Xに集合する。この混合
比は、稼働中であっても各比例バルブ5A〜5Dの設定
を通じて変更することが可能である。このようにして作
られた混合液は、図1に示すポンプ10を通過した後、
ミキサー11で均質に混合され、気化器12で気化され
る。この気化器12にはCVDリアクター1の他にベン
トライン16が設けてあり、混合ガスは図8のタイムチ
ャートで示すように成膜中にのみCVDリアクター1に
送られ、成膜と成膜の間はベントライン16側に逃がさ
れる。このとき、ポンプ10をOFF、ポンプ14をO
Nにして、溶剤移送ライン13から気化器12に溶剤が
直接移送され、内部の洗浄が行われる。
The solvent-only container 2D is designed so that the solvent can be directly transferred to the inlet of the vaporizer 12 through a solvent transfer line 13 and an auxiliary pump 14 separately provided for cleaning the vaporizer. It is also possible to introduce an inert carrier gas into the vaporizer 12 through the carrier gas introduction system 15 from outside. Next, the handling method of this embodiment will be described. First, when attaching empty containers 2A to 2D, their inlet side and outlet side are connected to the nearest pipes to which the containers 2A to 2D are to be connected, respectively, via joints z. Next, after opening all the valves to operate the vacuum line 8 and evacuating the containers 2A to 2D and the pipes at various locations, the liquid material is introduced into each of the containers 2A to 2D along arrows a2 to d2 in FIG. Fill AC and solvent D.
Then, while the pump 10 is operated, an arrow e in FIG.
When an inert gas is introduced into the inlet side of each of the containers 2A to 2D along the purge line 7 and pressurized at the liquid level, the liquid materials A to C and the solvent D filled in these containers 2A to 2D Are indicated by arrows a1 to d1 in FIG.
To 4D, and gather at the gathering position X at a predetermined mixing ratio via the proportional valves 5A to 5D. This mixing ratio can be changed through the setting of each of the proportional valves 5A to 5D even during operation. After the mixture thus produced passes through the pump 10 shown in FIG.
The mixture is homogeneously mixed by a mixer 11 and vaporized by a vaporizer 12. The vaporizer 12 is provided with a vent line 16 in addition to the CVD reactor 1, and the mixed gas is sent to the CVD reactor 1 only during the film formation as shown in the time chart of FIG. The space is released to the vent line 16 side. At this time, the pump 10 is turned off and the pump 14 is turned off.
N, the solvent is directly transferred from the solvent transfer line 13 to the vaporizer 12, and the inside is cleaned.

【0016】以上のようにして、この実施例のものは、
比例バルブ5A〜5Dの設定を通じて各液体材料の混合
比は勿論のこと混合液中に占める溶剤の割合すなわち原
料の濃度を随意に変更することができる。したがって、
本実施例によると、逐一装置の稼働を止めて容器2A〜
2Dを継手zから取り外すような事を一切行わずとも、
混合液の希釈等を極めて容易に行い、稼働効率の向上を
図ることが可能となる。特に、近時では1回の成膜中に
も混合比や希釈度を変えたいという要望があり、本実施
例の装置はこのような要望に応える上で極めて有用なも
のとなり得る。しかも、各送液ライン4A〜4Dの集合
位置Xの下流に従来採用されていなかったミキサー11
を配置しているため、混合はこのミキサー11において
均質化されることになり、成膜に供される混合ガスを極
めて良質なものにして成膜精度の向上を図ることができ
る。特に、使用される材料によっては気化温度と分解温
度が接近し、気化器12内にその液体材料が残留するこ
とで分解生成物が発生する場合があったが、本実施例は
図2にタイムチャートで示したように成膜が終了するご
とに気化器12をベントライン16に接続して溶剤送給
ライン13から溶剤を導入し、内部を洗浄するため、分
解生成物の発生を有効に防止して膜質の低下を防ぐこと
ができる。また、各ラインを構成するにあたり種々の配
管を共用化し、また送液のためのポンプ10や気化器1
2を各1台で賄っているため、全体構成の簡素化を通じ
てコストやメンテナンス上の利点も得ることができる。
As described above, in this embodiment,
Through setting of the proportional valves 5A to 5D, not only the mixing ratio of each liquid material but also the ratio of the solvent in the mixed liquid, that is, the concentration of the raw material can be arbitrarily changed. Therefore,
According to this embodiment, the operation of the apparatus is stopped one by one and the containers 2A to
Without doing anything like removing 2D from joint z,
Dilution of the mixed solution can be performed very easily, and operation efficiency can be improved. In particular, recently, there is a demand to change the mixing ratio and the degree of dilution even during one film formation, and the apparatus of this embodiment can be extremely useful in meeting such a demand. In addition, the mixer 11 that has not been conventionally employed is located downstream of the collecting position X of each of the liquid sending lines 4A to 4D.
Is arranged, the mixing is homogenized in the mixer 11, and the quality of the mixed gas supplied to the film formation can be made extremely high to improve the film formation accuracy. In particular, depending on the material used, the vaporization temperature and the decomposition temperature approach each other, and the liquid material may remain in the vaporizer 12 to generate decomposition products. As shown in the chart, every time the film formation is completed, the vaporizer 12 is connected to the vent line 16 to introduce the solvent from the solvent supply line 13 and clean the inside, thereby effectively preventing generation of decomposition products. As a result, deterioration of the film quality can be prevented. Also, various pipes are commonly used for configuring each line, and a pump 10 and a vaporizer 1 for liquid sending are used.
Since each of the two is covered by one unit, advantages in cost and maintenance can be obtained through simplification of the overall configuration.

【0017】以上のような取り扱いに加え、パージライ
ン7を図5の矢印gのように形成すれば各容器2A〜2
Dに液を残したままの状態で容器下流側の配管における
液除去が行えるし、容器2A〜2Dの全部又は一部を液
交換等のために取り外したい場合にはパージライン7を
図4の矢印fのように形成し、バキュームライン8を矢
印hのように形成すれば容器2A〜2Dの継手z付近に
存在する液体材料等をパージすることができる。この場
合、継手z付近の配管内に液体材料が残っていると加水
分解等の原因となるため、引き続き図6に矢印kで示す
パージライン7を通じて溶剤容器2D内の液面加圧を行
いながら矢印iで示す溶剤バイパスライン9を通じて材
料容器2A〜2Cに溶剤を導入し、同時にバキュームラ
イン8を通じて必要な配管の真空引きを行えば、液体材
料の残留を確実に防止することが可能となる。さらに、
ポンプ10やバルブ5A〜5Cをメンテナンスする際
は、図7の矢印mに沿って溶剤容器2Dを液面加圧し、
矢印nに沿って溶剤を周辺配管に送り出すこともでき
る。
In addition to the handling described above, if the purge line 7 is formed as shown by the arrow g in FIG.
The liquid can be removed from the piping on the downstream side of the container while the liquid remains in D. If it is desired to remove all or a part of the containers 2A to 2D for liquid exchange or the like, the purge line 7 is connected to the position shown in FIG. If the vacuum line 8 is formed as shown by the arrow h and the vacuum line 8 is formed as shown by the arrow h, the liquid material and the like existing near the joint z of the containers 2A to 2D can be purged. In this case, if the liquid material remains in the pipe near the joint z, it may cause hydrolysis or the like. Therefore, while the liquid level in the solvent container 2D is continuously performed through the purge line 7 indicated by an arrow k in FIG. If the solvent is introduced into the material containers 2A to 2C through the solvent bypass line 9 indicated by the arrow i and the necessary piping is simultaneously evacuated through the vacuum line 8, it is possible to reliably prevent the liquid material from remaining. further,
When performing maintenance on the pump 10 and the valves 5A to 5C, the liquid level of the solvent container 2D is increased along the arrow m in FIG.
The solvent can be sent out to the peripheral piping along the arrow n.

【0018】なお、上記実施例は取り扱いの一例を示し
たに過ぎないものであり、バルブの種々の開閉操作を通
じて異なる態様のパージ、真空引き等が行えるのは言う
までもない。また、バルブを自動で制御するようにした
り、ポンプに変えてマスフローコントローラを用いるな
ど、各部の具体的な構成は図示実施例のものに限定され
るものではなく、本発明の趣旨を逸脱しない範囲で種々
変形が可能である。
The above embodiment is merely an example of handling, and it goes without saying that purging and evacuation in different modes can be performed through various opening and closing operations of the valve. Also, the specific configuration of each part is not limited to those in the illustrated embodiment, such as automatically controlling the valve or using a mass flow controller instead of the pump. Various modifications are possible.

【0019】[0019]

【発明の効果】本発明は、以上説明したように、液体材
料を収容する容器以外にそれらの液体材料に用いられて
いるものと同一又は同種の溶剤を収容する溶剤専用容器
を設け、これらの容器から導出した液体材料及び溶剤を
送液ラインを介して1箇所に集合させるようにしたもの
である。このため、各液体材料同士の割合のみならずそ
の希釈度等をも逐一容器を取り外すことなく簡単に変更
することが可能となり、稼働効率のみならず成膜の品質
なども有効に向上させることが可能となる。
According to the present invention, as described above, in addition to the container for storing the liquid material, a solvent-only container for storing the same or the same type of solvent as that used for the liquid material is provided. The liquid material and the solvent derived from the container are collected at one place via a liquid sending line. Therefore, it is possible to easily change not only the ratio of each liquid material but also the degree of dilution thereof without removing the container one by one, and it is possible to effectively improve not only the operation efficiency but also the quality of film formation. It becomes possible.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の一実施例を示す回路図。FIG. 1 is a circuit diagram showing one embodiment of the present invention.

【図2】同回路の要部説明図。FIG. 2 is an explanatory diagram of a main part of the circuit.

【図3】同回路の要部説明図。FIG. 3 is an explanatory diagram of a main part of the circuit.

【図4】同回路の要部説明図。FIG. 4 is an explanatory diagram of a main part of the circuit.

【図5】同回路の要部説明図。FIG. 5 is an explanatory diagram of a main part of the circuit.

【図6】同回路の要部説明図。FIG. 6 is an explanatory diagram of a main part of the circuit.

【図7】同回路の要部説明図。FIG. 7 is an explanatory diagram of a main part of the circuit.

【図8】同実施例の運転状態を示すタイムチャート図。FIG. 8 is a time chart showing an operation state of the embodiment.

【符号の説明】[Explanation of symbols]

A、B、C…液体材料 D…溶剤 2A、2B、2C…材料容器 2D…溶剤専用容器 4A、4B、4C、4D…送液ライン A, B, C: liquid material D: solvent 2A, 2B, 2C: material container 2D: solvent-only container 4A, 4B, 4C, 4D: liquid sending line

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】複数の液体材料を混合する際に利用される
ものであって、各々の液体材料を収容する複数の材料容
器と、前記各液体材料に使用されている溶剤と同一又は
同種の溶剤を充填した溶剤専用容器と、各容器からの液
体材料及び溶剤を1箇所に集合させるための複数の送液
ラインとを具備してなることを特徴とする液体材料気化
装置。
An apparatus for mixing a plurality of liquid materials, comprising: a plurality of material containers for storing the respective liquid materials; and a same or similar type of solvent used for each of the liquid materials. A liquid material vaporizer comprising: a solvent-dedicated container filled with a solvent; and a plurality of liquid feed lines for collecting the liquid material and the solvent from each container at one place.
JP09029446A 1997-02-13 1997-02-13 Liquid material vaporizer Expired - Fee Related JP3106990B2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP09029446A JP3106990B2 (en) 1997-02-13 1997-02-13 Liquid material vaporizer
KR1019980003226A KR100345223B1 (en) 1997-02-13 1998-02-05 Apparatus for vaporizing liquid material
US09/021,153 US6074487A (en) 1997-02-13 1998-02-10 Unit for vaporizing liquid materials

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP09029446A JP3106990B2 (en) 1997-02-13 1997-02-13 Liquid material vaporizer

Publications (2)

Publication Number Publication Date
JPH10229076A true JPH10229076A (en) 1998-08-25
JP3106990B2 JP3106990B2 (en) 2000-11-06

Family

ID=12276357

Family Applications (1)

Application Number Title Priority Date Filing Date
JP09029446A Expired - Fee Related JP3106990B2 (en) 1997-02-13 1997-02-13 Liquid material vaporizer

Country Status (1)

Country Link
JP (1) JP3106990B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009129966A (en) * 2007-11-20 2009-06-11 Fujitsu Microelectronics Ltd Film formation method, film-forming apparatus, and method for manufacturing semiconductor device
JP2013055359A (en) * 2007-08-30 2013-03-21 Hitachi Kokusai Electric Inc Method for manufacturing semiconductor device, substrate processing method and substrate processing apparatus

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013055359A (en) * 2007-08-30 2013-03-21 Hitachi Kokusai Electric Inc Method for manufacturing semiconductor device, substrate processing method and substrate processing apparatus
JP2009129966A (en) * 2007-11-20 2009-06-11 Fujitsu Microelectronics Ltd Film formation method, film-forming apparatus, and method for manufacturing semiconductor device

Also Published As

Publication number Publication date
JP3106990B2 (en) 2000-11-06

Similar Documents

Publication Publication Date Title
JP3601153B2 (en) Cleaning method for processing gas supply device
TW468020B (en) Auto-switching gas delivery system utilizing sub-atmospheric pressure gas supply vessels
TW201907038A (en) Method and device for depositing germanium layer in interconnect metallization
JP2011174170A (en) Substrate processing apparatus and method for manufacturing semiconductor device
KR20040030063A (en) Integral blocks, chemical delivery systems and methods for delivering an ultrapure chemical
DE4330266A1 (en) Reaction chamber for chemical vapour deposition - comprises wafer heating appts., gas supply head, reaction chamber element, waste gas outlet
US8641829B2 (en) Substrate processing system
JP2003524292A5 (en)
KR20100043289A (en) Film forming apparatus and film forming method
CN105714272A (en) Hardware And Process For Film Uniformity Improvement
CN101608734B (en) Reagent dispensing apparatus and carrying method
JP2008205151A (en) Substrate processing apparatus
JPH01187808A (en) Method and apparatus for eptaxial manufacture of semiconductor device or object with layers
EP0818565A2 (en) Gas supplying apparatus and vapor-phase growth plant
JP3106990B2 (en) Liquid material vaporizer
JP2009094401A (en) Substrate processing apparatus
CN102134708A (en) Filter for filtering fluid in a substrate treatment chamber
JP3106991B2 (en) Liquid material vaporizer
US20170167022A1 (en) Apparatus for high speed atomic layer deposition and deposition method using the same
JP3741860B2 (en) Manufacturing apparatus and manufacturing method of oxide superconducting conductor
TW200304185A (en) Method of manufacturing a semiconductor device and method of forming a film
JPH10303189A (en) Vaporizing device for liquid material
JPH02125421A (en) Heat treatment apparatus
JP2005256107A (en) Organometallic chemical vapor deposition system and raw material carburetor
JP2010040845A (en) Substrate treating apparatus

Legal Events

Date Code Title Description
FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20070908

Year of fee payment: 7

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20080908

Year of fee payment: 8

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20080908

Year of fee payment: 8

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20090908

Year of fee payment: 9

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20090908

Year of fee payment: 9

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100908

Year of fee payment: 10

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110908

Year of fee payment: 11

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110908

Year of fee payment: 11

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120908

Year of fee payment: 12

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120908

Year of fee payment: 12

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130908

Year of fee payment: 13

LAPS Cancellation because of no payment of annual fees