JPH10204642A - Evacuation treating device - Google Patents

Evacuation treating device

Info

Publication number
JPH10204642A
JPH10204642A JP1107997A JP1107997A JPH10204642A JP H10204642 A JPH10204642 A JP H10204642A JP 1107997 A JP1107997 A JP 1107997A JP 1107997 A JP1107997 A JP 1107997A JP H10204642 A JPH10204642 A JP H10204642A
Authority
JP
Japan
Prior art keywords
speed
dust
closed chamber
dusts
exhaust
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1107997A
Other languages
Japanese (ja)
Other versions
JP3037173B2 (en
Inventor
Yasuo Kawasaki
康生 川▲崎▼
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Yamaguchi Ltd
Original Assignee
NEC Yamaguchi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Yamaguchi Ltd filed Critical NEC Yamaguchi Ltd
Priority to JP9011079A priority Critical patent/JP3037173B2/en
Publication of JPH10204642A publication Critical patent/JPH10204642A/en
Application granted granted Critical
Publication of JP3037173B2 publication Critical patent/JP3037173B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps

Abstract

PROBLEM TO BE SOLVED: To enable high throughput while the generation of dusts is prevented by measuring the number of suspending dusts in a sealed chamber, calculating the exhausting speed and sucking speed from the detected number of suspending dusts and controlling the exhausting speed and sucking speed. SOLUTION: A gas in a sealed chamber 1 is exhausted by a pump 4 via an exhaust pipe 2 and a throttle valve 3. A gas is fed to the sealed chamber 1 in an evacuated state from a suction pipe 6 via a flow rate control valve 5. A dust counter 7 always monitors the condition of dusts to be generated in the sealed chamber 1. The detected number of the suspending dusts is fed to a control unit 8, and this control unit 8 controls and adjusts the opening degree of the throttle valve 3 or the flow rate control valve 5 in accordance with the detected number of the suspending dusts. In the case the detected number of the suspending dusts is less than certain value, the throttle valve 3 is continued to be adjusted in the opening direction, so that the exhausting speed is made high in the condition in which the generation of dusts is hard to occur.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は減圧処理装置に係わ
り、特に半導体装置の製造工程に用いるドライエッチン
グ装置や成長装置やCVD装置等の減圧処理装置に関す
る。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a reduced pressure processing apparatus, and more particularly to a reduced pressure processing apparatus such as a dry etching apparatus, a growth apparatus, and a CVD apparatus used in a semiconductor device manufacturing process.

【0002】[0002]

【従来の技術】図4は、特開平4−284622号公報
に開示された給排気装置で、図示のように、密閉室21
は主・副2系統の給排気管25,26により、主・副の
給排気弁23,24を介してポンプ29とつながってお
り、ポンプによる排気時及び流量調節管27に接続する
流量調節弁28を介して密閉室内への給気時に、密閉室
内の圧力を圧力センサー22によりモニターしながら流
量調節弁及び給排気弁を制御装置30により制御してい
る。
2. Description of the Related Art FIG. 4 shows an air supply / exhaust device disclosed in Japanese Patent Application Laid-Open No. 4-284622.
Is connected to a pump 29 through main / sub supply / exhaust valves 23, 24 by two main / sub supply / exhaust pipes 25, 26. At the time of air supply to the closed chamber via 28, the flow control valve and the supply / exhaust valve are controlled by the control device 30 while monitoring the pressure in the closed chamber by the pressure sensor 22.

【0003】この方式により、発塵がおこり易い圧力範
囲では副給排気弁及び流量調節弁を開いて給排気を行
い、高速給排気を行っても発塵しない圧力範囲では副給
排気弁及び流量調節弁を閉じ、主給排気弁を開いて給排
気を行っている。
According to this method, a sub-supply / exhaust valve and a flow rate control valve are opened to supply / exhaust in a pressure range where dust easily occurs, and a sub-supply / exhaust valve and a flow rate in a pressure range where dust is not generated even when high-speed supply / exhaust is performed. The control valve is closed and the main supply / exhaust valve is opened to supply / exhaust air.

【0004】また、特開平5−288669号公報およ
び特開平3−226579号公報に密閉室もしくは常圧
反応室内の発塵状況をモニターする方法が開示されてい
る。前者は密閉室内の発塵状況のモニターをより高精度
に行うための手法であり、後者は常圧CVD装置で、常
圧反応室につながる排気配管に吸気される排気中のパー
ティクルをモニターし、パーティクル数が上限を越えた
時に警報を発し、反応ガス供給を断とする。
Further, JP-A-5-288669 and JP-A-3-226579 disclose methods for monitoring the state of dust generation in a closed chamber or a normal pressure reaction chamber. The former is a method for monitoring the state of dust generation in a closed chamber with higher accuracy, and the latter is a normal pressure CVD device, which monitors particles in exhaust gas sucked into an exhaust pipe connected to a normal pressure reaction chamber, An alarm is issued when the number of particles exceeds the upper limit, and the supply of the reaction gas is stopped.

【0005】[0005]

【発明が解決しようとする課題】第1の問題点は、特開
平4−284622号公報において、密閉室内の実際の
発塵状況がわからないため、実際に発塵が生じてもそれ
に対応することができず、他方、発塵が生じていなくて
も必要以上に給排気を緩慢に行うことでスループットを
低下させてしまうことである。
The first problem is that in Japanese Patent Application Laid-Open No. 4-284622, since the actual dust generation state in a closed room is not known, even if dust actually occurs, it can be dealt with. On the other hand, even if dust generation does not occur, throughput is reduced by performing supply and exhaust more slowly than necessary.

【0006】その理由は、圧力のみをモニターし、その
状況により主・副の給排気配管を使い分けて密閉室内の
発塵を防止しようとしているからである。
The reason is that only the pressure is monitored, and the main and sub-supply / exhaust pipes are selectively used depending on the situation to prevent dust in the closed chamber.

【0007】第2の問題点は、特開平5−288669
号公報および特開平3−226579号公報の手法にお
いて、発塵が生じた際に前者では発塵による被害を受け
るままであり、後者は発塵に対する対応が反応ガスを止
めること(処理を中断すること)であるため、処理中断
による不具合が発生し、またスループットも低下させて
しまうことである その理由は、両者とも発塵をモニターする機構を持って
いるものの、いずれもその發塵を抑制するための機構を
持たないからである。
The second problem is disclosed in Japanese Patent Application Laid-Open No. 5-288669.
In the methods disclosed in Japanese Patent Application Laid-Open No. HEI 3-226579 and Japanese Patent Application Laid-Open No. Hei 3-226579, when dust is generated, the former remains damaged by dust generation, and the latter responds to the generation of dust by stopping the reaction gas (interrupting the process). That is, a problem occurs due to the interruption of the process, and the throughput is reduced. The reason is that both have a mechanism for monitoring dust generation, but both suppress the dust generation. This is because there is no mechanism for this.

【0008】したがって本発明の目的は、密閉室内の発
塵状況モニター及びその状況に応じた給排気スピードの
制御により、発塵が起こるような状況では確実に給排気
スピードを抑制して発塵による被害を最少限にとどめ、
また発塵が起こらない状況では給排気スピードを上げて
処理速度を高めることでき、これにより、確実に発塵を
防止しながら高スループットを得ることができる減圧処
理装置を提供する事である。
Accordingly, an object of the present invention is to monitor the dust generation status in a closed room and control the supply / exhaust speed in accordance with the situation, thereby surely suppressing the supply / exhaust speed in a situation in which dust is generated, thereby reducing the dust generation. Minimize damage,
Further, it is an object of the present invention to provide a decompression processing apparatus capable of increasing a processing speed by increasing a supply / exhaust speed in a situation where dust does not occur, thereby obtaining a high throughput while reliably preventing dust generation.

【0009】[0009]

【課題を解決するための手段】本発明の特徴は、密閉室
と、前記密閉室に接続された排気配管及び給気配管と、
前記密閉室内の浮遊塵数を計測する検出器とを有し、前
記検出器により検出された浮遊塵数から排気スピードと
給気スピードを演算し、排気スピードと給気スピードを
制御する制御装置を有する減圧処理装置にある。
SUMMARY OF THE INVENTION The present invention is characterized in that a closed chamber, an exhaust pipe and an air supply pipe connected to the closed chamber,
A detector for measuring the number of airborne dust in the closed chamber, calculating a discharge speed and an air supply speed from the number of airborne dust detected by the detector, and controlling the exhaust speed and the air supply speed. Pressure reduction processing apparatus.

【0010】より具体的には、本発明による減圧処理装
置は、密閉室につながる排気管・吸気管と、排気管に設
けられたスロットルバルブと、排気管につながり排気を
行うポンプと、給気管に設けられた給気用ガス流量調節
弁と、密閉室内の発塵状況をモニタするダストカウンタ
ーと、ダストカウンターから浮遊塵検出数の信号を受け
取りスロットルバルブ及び流量調節弁の働きを制御する
制御装置によって構成され、給排気時の気流による発塵
をモニターし、その量によりスロットルバルブあるいは
流量調節弁を調整する機構を有する。
More specifically, the decompression processing apparatus according to the present invention comprises an exhaust pipe / intake pipe connected to a closed chamber, a throttle valve provided in the exhaust pipe, a pump connected to the exhaust pipe to perform exhaust, and an air supply pipe. A gas flow control valve for air supply, a dust counter for monitoring the state of dust generation in a closed chamber, and a control device for receiving signals of the number of detected suspended dust from the dust counter and controlling the functions of the throttle valve and the flow control valve. And a mechanism for monitoring the generation of dust due to the air flow at the time of air supply and exhaust, and adjusting a throttle valve or a flow control valve according to the amount of dust.

【0011】本発明の他の特徴は、内部に可動部位を有
する密閉室と、前記密閉室内の浮遊塵数を計測する検出
器とを有し、前記検出器により計測された浮遊塵数から
前記可動部位の動作速度を演算し、この動作速度を制御
する制御装置を有する減圧処理装置にある。あるいは本
発明の他の特徴は、内部に可動部位を有する密閉室と、
前記密閉室に接続された排気配管及び給気配管と、前記
密閉室内の浮遊塵数を計測する検出器とを有し、前記検
出器により検出された浮遊塵数から排気スピードと給気
スピードと前記可動部位の動作スピードを演算し、それ
ぞれのスピードを制御する制御装置を有する減圧処理装
置にある。
Another feature of the present invention is that it has a closed chamber having a movable part therein, and a detector for measuring the number of floating dust in the closed chamber. The pressure reduction processing apparatus includes a control device that calculates an operation speed of a movable part and controls the operation speed. Alternatively, another feature of the present invention is a closed chamber having a movable part therein,
An exhaust pipe and an air supply pipe connected to the closed chamber, and a detector for measuring the number of floating dust in the closed chamber, the exhaust speed and the air supply speed from the number of floating dust detected by the detector The present invention resides in a decompression processing device having a control device that calculates an operation speed of the movable part and controls each speed.

【0012】このように本発明によれば、密閉室内の発
塵状況をモニターし、その状況により給排気スピード等
をを制御する機構を有するから、発塵が起こりやすい状
況では給排気スピードを抑制して確実に発塵を防止で
き、一方、発塵が起こり難い状況では給排気スピードを
上げて、処理時間を高効率化することができる。
As described above, according to the present invention, there is provided a mechanism for monitoring the state of dust generation in the sealed room and controlling the supply / exhaust speed based on the situation. Thus, dust generation can be reliably prevented. On the other hand, when dust generation is unlikely to occur, the supply / exhaust speed can be increased, and the processing time can be increased.

【0013】[0013]

【発明の実施の形態】以下図面を参照して本発明を説明
する。
DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below with reference to the drawings.

【0014】図1は本発明の第1の実施の形態の減圧処
理装置の構成を示す図である。この装置では、密閉室1
内の気体を排気管2及びスロットルバルブ3を介してポ
ンプ4で排気し、また減圧状態にある密閉室1内にガス
を供給する際には流量調節弁5を介して吸気管6より行
う。
FIG. 1 is a diagram showing a configuration of a decompression processing apparatus according to a first embodiment of the present invention. In this device, the closed chamber 1
The gas inside is exhausted by the pump 4 through the exhaust pipe 2 and the throttle valve 3, and the gas is supplied from the intake pipe 6 through the flow control valve 5 when the gas is supplied into the closed chamber 1 in a reduced pressure state.

【0015】密閉室1内は常時ダストカウンター7によ
り発塵状況がモニタされており、このダストカウンター
7での浮遊塵検出数は制御装置8に送られ、その数に応
じて制御装置8により、スロットルバルブ3あるいは流
量調節弁5の適切な開度を演算し、それにより開度の制
御、調整を行う。
The state of dust generation in the closed chamber 1 is constantly monitored by a dust counter 7, and the number of floating dust detected by the dust counter 7 is sent to a control device 8. An appropriate opening of the throttle valve 3 or the flow control valve 5 is calculated, thereby controlling and adjusting the opening.

【0016】以上述べた構成を持つ装置で、排気時に密
閉室1内で気流による発塵が生じた場合、ダストカウン
ター7による浮遊塵検出数がある一定の値を超えた際
に、この数が一定値以下となるように制御装置8がスロ
ットバルブ3を閉方向に調整することで密閉室1内の気
流流速を下げ、発塵を抑制する。
In the apparatus having the above-described configuration, when dust is generated due to an air current in the closed chamber 1 at the time of evacuation, when the number of floating dust detected by the dust counter 7 exceeds a certain value, this number is reduced. The controller 8 adjusts the slot valve 3 in the closing direction so as to be equal to or less than a certain value, thereby reducing the air flow velocity in the closed chamber 1 and suppressing dust generation.

【0017】また、発塵による浮遊塵検出数がある一定
の値以下であれば、制御装置8によりスロットルバルブ
3が開方向に調整され続けるため、発塵の起こりにくい
状況では排気スピードを上げることができる。
If the number of detections of floating dust due to dust generation is less than a certain value, the throttle valve 3 is continuously adjusted in the opening direction by the control device 8, so that the exhaust speed should be increased in a situation where dust generation hardly occurs. Can be.

【0018】給気についても同様の制御が行われ、浮遊
塵数が一定の値以上であれば流量調節弁が閉方向に調整
され、一定の値以下であれば流量調節弁が開方向に調整
され続ける。
The same control is performed for the air supply. If the number of floating dust is equal to or more than a certain value, the flow control valve is adjusted in the closing direction. Continue to be.

【0019】図2は上記本発明の減圧処理装置におい
て、密閉室の排気を行う際の密閉室内圧力およびスロッ
トルバルブ開度の経時変化を例示するグラフである。
FIG. 2 is a graph illustrating changes over time in the pressure in the closed chamber and the degree of opening of the throttle valve when the closed chamber is evacuated in the decompression processing apparatus of the present invention.

【0020】一般的には圧力の高い領域では発塵が起こ
り易く、低圧になるほど発塵は起こりにくいため、高圧
領域ではスロットルバルブ開度は小さく、低圧領域にな
る程スロットルバルブ開度は大きくなり、最終的に全開
となる。
In general, dust is likely to occur in a high pressure region, and is less likely to occur in a low pressure region. Therefore, the throttle valve opening is small in a high pressure region and is large in a low pressure region. , Finally fully open.

【0021】次に、本発明の第2の実施の形態について
図3を参照して説明する。
Next, a second embodiment of the present invention will be described with reference to FIG.

【0022】この第2の実施の形態の減圧処理装置は、
例えば半導体装置の製造装置に適用することができる。
より具体的にはドライエッチング装置や成長装置に適用
することができる。
The decompression processing apparatus according to the second embodiment comprises:
For example, the present invention can be applied to a semiconductor device manufacturing apparatus.
More specifically, the present invention can be applied to a dry etching apparatus or a growth apparatus.

【0023】図3の減圧処理装置の密閉室は、半導体装
置の入ったキャリアを収納する第1の密閉室11と、処
理ステージ17を有しその上で半導体装置の処理を行う
第2の密閉室12に分けられ、第1の密閉室11と第2
の密閉室12との間で半導体装置を搬送するハンドラー
18が密閉室内の可動部位の一つとして設けられ、第1
の密閉室11と第2の密閉室12との間の仕切に形成さ
れ、両室につながる開孔部を開閉するドア16が密閉室
内の可動部位の他の一つとして設けられている。
The closed chamber of the decompression processing apparatus shown in FIG. 3 has a first closed chamber 11 for accommodating a carrier containing a semiconductor device, and a second sealed chamber having a processing stage 17 on which the semiconductor device is processed. The first closed chamber 11 and the second
A handler 18 for transferring a semiconductor device to and from the closed chamber 12 is provided as one of movable parts in the closed chamber,
A door 16 which is formed in a partition between the closed chamber 11 and the second closed chamber 12 and opens and closes an opening connected to both the chambers is provided as another movable part in the closed chamber.

【0024】また、第1および第2の密閉室11,12
における發塵状況をそれぞれモニターする第1および第
2のダストカウンター13,14がそれぞれ設けられ、
さらにこれらのダストカウンターからの信号を受けてハ
ンドラー18やドア16の動きを制御し、図1に示した
ような給排気系統(図3では図示省略)のバルブを制御
する制御装置19を有して構成される。
Further, the first and second closed chambers 11, 12
First and second dust counters 13 and 14 for monitoring the dust generation status at
Further, a control device 19 is provided for controlling the movement of the handler 18 and the door 16 in response to signals from these dust counters and controlling valves of a supply / exhaust system (not shown in FIG. 3) as shown in FIG. It is composed.

【0025】この装置では、第1のダストカウンター1
3と第2のダストカウンター14によって常時、第1の
密閉室11と第2の密閉室12内の発塵状況をモニター
しながら半導体装置の搬送・処理を行っている。
In this apparatus, the first dust counter 1
The semiconductor device is transported and processed while constantly monitoring the state of dust generation in the first closed chamber 11 and the second closed chamber 12 by the third dust counter 14 and the second dust counter 14.

【0026】ダストカウンターからの信号を受けた制御
装置19は、密閉室内の発塵状況に応じてハンドラー1
8及びドア16の適切な動作スピードを演算し、それに
よりこれらのスピードを制御し調整する。
The control device 19, which has received the signal from the dust counter, sets the handler 1 according to the dust generation condition in the closed room.
The appropriate operating speed of the door 8 and the door 16 is calculated, thereby controlling and adjusting these speeds.

【0027】この機構により、発塵が起こりやすいよう
な状況では可動部の動作スピードを遅くしてゴミの発生
を抑制し、また発塵が起こり難いような状況では可動部
の動きをスムースにすることで処理時間を短縮すること
ができる。
With this mechanism, the operation speed of the movable portion is reduced in a situation where dust is likely to occur, thereby suppressing generation of dust. In a situation where dust is unlikely to occur, the movement of the movable portion is made smooth. As a result, the processing time can be reduced.

【0028】[0028]

【発明の効果】以上説明したように本発明の第1の効果
は、発塵による悪影響を最小限にとどめることができる
ことである。
As described above, the first effect of the present invention is that the adverse effect of dust generation can be minimized.

【0029】その理由は、密閉室内の発塵状況を常時モ
ニターしているため、発塵がおこり易い状況での給排気
スピードもしくは可動部の動作スピードの調整により発
塵を確実に抑制できるからである。
The reason is that the dust generation state in the sealed room is constantly monitored, so that the generation of dust can be reliably suppressed by adjusting the air supply / exhaust speed or the operation speed of the movable part in the case where dust easily occurs. is there.

【0030】第2の効果は、不必要に給排気スピードも
しくは可動部の動作スピードを下げることによる処理時
間の浪費を防ぐことができるということである。
The second effect is that processing time can be prevented from being wasted due to unnecessary lowering of the supply / exhaust speed or the operation speed of the movable part.

【0031】その理由は、密閉室内で発塵が起こってい
なければ、それに対応して給排気スピードもしくは可動
部の動作スピードを上げるという機構を有しているから
である。
The reason is that if dust is not generated in the closed chamber, a mechanism is provided to increase the supply / exhaust speed or the operation speed of the movable part correspondingly.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の第1の実施の形態の減圧処理装置の構
成を示した図である。
FIG. 1 is a diagram showing a configuration of a decompression processing apparatus according to a first embodiment of the present invention.

【図2】本発明の実施の形態の減圧処理装置において、
密閉室排気を行う際の密閉室内圧力及びスロットルバル
ブ開度の経時変化を例示した図である。
FIG. 2 shows a decompression processing apparatus according to an embodiment of the present invention.
It is the figure which illustrated change with time of the pressure of a closed chamber, and the opening degree of a throttle valve at the time of performing a closed chamber exhaust.

【図3】本発明の第2の実施の形態の減圧処理装置の構
成を示した図である。
FIG. 3 is a diagram illustrating a configuration of a decompression processing apparatus according to a second embodiment of the present invention.

【図4】従来技術の減圧処理装置の構成を示した図であ
る。
FIG. 4 is a diagram showing a configuration of a conventional decompression processing apparatus.

【符号の説明】[Explanation of symbols]

1 密閉室 2 排気管 3 スロットルバルブ 4 ポンプ 5 流量調節弁 6 給気管 7 ダストカウンター 8 制御装置 11 第1の密閉室 12 第2の密閉室 13 第1のダストカウンター 14 第2のダストカウンター 15 キャリア 16 ドア 17 処理ステージ 18 ハンドラー 19 制御装置 21 密閉室 22 圧力センサー 23 主給排気弁 24 副給排気弁 25 主排気管 26 副給排気管 27 流量調節管 28 流量調節弁 29 ポンプ 30 制御装置 DESCRIPTION OF SYMBOLS 1 Closed chamber 2 Exhaust pipe 3 Throttle valve 4 Pump 5 Flow control valve 6 Air supply pipe 7 Dust counter 8 Control device 11 1st closed chamber 12 2nd closed chamber 13 1st dust counter 14 2nd dust counter 15 Carrier Reference Signs List 16 Door 17 Processing stage 18 Handler 19 Controller 21 Sealed chamber 22 Pressure sensor 23 Main supply / exhaust valve 24 Secondary supply / exhaust valve 25 Main exhaust pipe 26 Secondary supply / exhaust pipe 27 Flow control pipe 28 Flow control valve 29 Pump 30 Controller

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 密閉室と、前記密閉室に接続された排気
配管及び給気配管と、前記密閉室内の浮遊塵数を計測す
る検出器とを有し、前記検出器により検出された浮遊塵
数から排気スピードと給気スピードを演算し、排気スピ
ードと給気スピードを制御する制御装置を有することを
特徴とする減圧処理装置。
A closed chamber, an exhaust pipe and an air supply pipe connected to the closed chamber, and a detector for measuring the number of floating dust in the closed chamber, wherein the floating dust detected by the detector is provided. A decompression processing device comprising a control device that calculates an exhaust speed and an air supply speed from a number and controls the exhaust speed and the air supply speed.
【請求項2】 内部に可動部位を有する密閉室と、前記
密閉室内の浮遊塵数を計測する検出器とを有し、前記検
出器により計測された浮遊塵数から前記可動部位の動作
速度を演算し、この動作速度を制御する制御装置を有す
ることを特徴とする減圧処理装置。
2. A closed chamber having a movable part therein, and a detector for measuring the number of floating dust in the closed chamber, and the operating speed of the movable part is determined from the number of floating dust measured by the detector. A decompression processing device comprising a control device for calculating and controlling the operation speed.
【請求項3】 内部に可動部位を有する密閉室と、前記
密閉室に接続された排気配管及び給気配管と、前記密閉
室内の浮遊塵数を計測する検出器とを有し、前記検出器
により検出された浮遊塵数から排気スピードと給気スピ
ードと前記可動部位の動作スピードを演算し、それぞれ
のスピードを制御する制御装置を有することを特徴とす
る減圧処理装置。
3. A closed chamber having a movable portion therein, an exhaust pipe and an air supply pipe connected to the closed chamber, and a detector for counting the number of floating dust in the closed chamber. A decompression processing device comprising: a controller that calculates an exhaust speed, an air supply speed, and an operation speed of the movable portion from the number of suspended dust detected by the control device and controls the respective speeds.
JP9011079A 1997-01-24 1997-01-24 Decompression processing equipment Expired - Fee Related JP3037173B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9011079A JP3037173B2 (en) 1997-01-24 1997-01-24 Decompression processing equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9011079A JP3037173B2 (en) 1997-01-24 1997-01-24 Decompression processing equipment

Publications (2)

Publication Number Publication Date
JPH10204642A true JPH10204642A (en) 1998-08-04
JP3037173B2 JP3037173B2 (en) 2000-04-24

Family

ID=11767983

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9011079A Expired - Fee Related JP3037173B2 (en) 1997-01-24 1997-01-24 Decompression processing equipment

Country Status (1)

Country Link
JP (1) JP3037173B2 (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005114709A3 (en) * 2004-05-12 2006-01-19 Inficon Inc Inter-process sensing of wafer outcome
KR100754243B1 (en) * 2006-02-17 2007-09-03 삼성전자주식회사 vacuum apparatus of semiconductor device manufacturing equipment
WO2008083026A1 (en) * 2006-12-27 2008-07-10 Varian Semiconductor Equipment Associates, Inc. Active particle trapping for process control

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KR101935286B1 (en) 2012-12-17 2019-01-04 코웨이 주식회사 A bathtub for foot including sliding type of support part

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005114709A3 (en) * 2004-05-12 2006-01-19 Inficon Inc Inter-process sensing of wafer outcome
US7257494B2 (en) 2004-05-12 2007-08-14 Inficon, Inc. Inter-process sensing of wafer outcome
JP2007537603A (en) * 2004-05-12 2007-12-20 インフィコン インコーポレイティッド Inter-process detection of wafer results
KR100754243B1 (en) * 2006-02-17 2007-09-03 삼성전자주식회사 vacuum apparatus of semiconductor device manufacturing equipment
WO2008083026A1 (en) * 2006-12-27 2008-07-10 Varian Semiconductor Equipment Associates, Inc. Active particle trapping for process control

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