JPH10200312A - Microwave integrated circuit - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a microwave integrated circuit in which the reactance of a matching circuit, especially, the short stab can be easily adjusted with high precision. SOLUTION: One part of the ground conductor of a matching circuit 12 is constituted of a metallic deposition film 24 formed so as to be extremely thin compared with a ground conductor 22 as a trimming area 26, and the width size of the trimming area 26 matches a width size Wg of a gap part 16b of a short stab 16. Thus, the metallic deposition film 24 can be easily removed by using a laser or tweezers, and only the reactance of the short stab 16 can be trimmed with high precision without changing the impedance of transmission lines 15a and 15b.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] 1. Field of the Invention [0002] The present invention relates to a microwave integrated circuit having a short stub constituted by using a coplanar line and handling a microwave band or millimeter wave band signal.

[0002]

SUMMARY OF THE INVENTION On-vehicle radar and wireless LA
For example, a microwave integrated circuit, which is expected to be applied to the communication field such as N, is formed on a semiconductor substrate such as indium phosphide (InP) or gallium arsenide (GaAs) or a dielectric substrate such as alumina by, for example, a high electron mobility transistor ( HEM
T), and a matching circuit including a reactance element is formed. The microwave integrated circuit includes a low-noise amplifier, a transmitter, a frequency multiplier,
There is a frequency mixer and the like.

In this case, short stubs, open stubs, capacitors and the like are used as reactance elements constituting a matching circuit. And the matching circuit is
By being provided on the input side and the output side of the active element,
It has a function of converting the input / output impedance of the active element and matching it to a predetermined value (for example, 50Ω).

FIG. 21 is a circuit diagram when an amplifier is configured as an example of such an integrated circuit. In FIG. 21, matching circuits 2 and 3 are connected to the input side (gate) and the output side (drain) of the HEMT 1 to form an integrated circuit 4. The matching circuits 2 and 3 include transmission lines 2a and 2b
And 3a, 3b, stubs 2c and 3c, and capacitor 2d
And 3d. These capacitors 2
d and 3d are MIM type capacitors. Also,
Transmission lines 2a, 2b and 3a, 3b and stubs 2c and 3
c is composed of a coplanar line.

Here, the configuration of the coplanar line will be described with reference to FIG. The coplanar line 5 includes a conductor 7 on a dielectric or semiconductor substrate 6 and a ground conductor 9 provided on both sides of the conductor 7 with a gap 8 therebetween. The characteristic impedance of the coplanar line 5 is determined by the ratio between the width Ws of the conductor 7 and the width Wg of the gap 8.

[0006] In the integrated circuit 4 as described above, it is necessary to prevent unpredictable variations of the HEMT 1 after the fabrication.
There is a case where it is desired to change the reactance of the matching circuits 2 and 3 for the purpose of obtaining a new matching in response to a request to provide an arbitrary operating condition to the EMT 1.

In such a case, the frequency of the signal to be handled is MHz
In a band integrated circuit, there is a method in which a plurality of bonding pads are provided in advance near a transmission line in the circuit, and the transmission line and the bonding pad or a bonding pad is connected by a wire. However, the variation in the length of the wire and the loop shape formed by the wire caused by the above method is negligible for the signal in the MHz band, but is an integrated circuit that handles signals in the microwave band and the millimeter band. In this case, the above-mentioned method cannot be applied as it is because the influence is so great as to affect the performance.

Japanese Patent Laid-Open Publication No. 3-195108 discloses an arrangement in which a switching element is provided in the middle of a matching circuit composed of a microstrip line so that matching circuits of different lengths can be switched. I have. However, in this method, the length of the matching circuit can be taken only as a discrete value, and it is required for unpredictable variations of active elements or for a demand to provide arbitrary operating conditions. Optimally matching is extremely difficult.

It has been considered that the conductors of the short stubs and transmission lines constituting the matching circuits 2 and 3 are directly processed.
However, since the conductor is usually formed as a thick film (for example, about 5 μm) by plating or the like, it is extremely difficult to process the conductor using mechanical means such as tweezers. Further, even when a laser is used, processing is not easy even if the output of the laser is considerably increased due to a factor that the thermal conductivity of the conductor is high in addition to the thickness of the conductor. In addition, there is a problem that burrs are generated in the processed portion, so that the precision of trimming is not improved.

[0010] The present invention is to solve the above-mentioned problems,
An object of the present invention is to provide a matching circuit, particularly a microwave integrated circuit capable of easily adjusting the reactance of the short stub with high accuracy.

[0011]

According to a first aspect of the present invention, there is provided a microwave integrated circuit having a trimming region provided around a connection portion of a ground conductor to which a short stub conductor is connected. Trimming makes it possible to easily and accurately adjust the reactance of the short stub and thus the matching circuit. Specifically, since the trimming region is formed of a metal deposition film as described in claim 2, for example, the metal deposition film is removed using a laser or the like, and the conductor length of the short stub is easily changed. , High-precision adjustment can be performed.

According to the microwave integrated circuit of the present invention, since the plurality of island-shaped thick metal films arranged on the metal deposition film lower the resistance of the trimming region, the conductivity as the ground conductor is ensured. be able to.

According to the microwave integrated circuit of the fourth aspect, the plurality of island-shaped metal thick films serve as trimming scales, so that the operator can perform trimming work based on the scales. High-precision adjustment can be performed more easily.

According to the microwave integrated circuit of the present invention, the metallized film is provided on the metallized film and the protective film formed on the metallized film is provided at substantially equal intervals. Since the perforated holes or the convex portions or concave portions provided at substantially equal intervals in the metal deposition film serve as trimming scales (claim 7), the same operation and effect as in claim 4 can be obtained.

According to the microwave integrated circuit of the present invention, since the trimming region is provided near the line on the ground electrode side of the MIM capacitor, the conductor of the short stub is connected to the ground conductor via the MIM capacitor. Adjustment can be easily performed even in a connection configuration.

According to the microwave integrated circuit of the ninth aspect, the trimming area is formed by providing a large number of holes or slits in the ground conductor.
Adjustment can be easily performed in the same manner as described above.

According to the microwave integrated circuit of the tenth aspect, the perforations or slits arranged at substantially equal intervals constitute a scale for trimming, so that the same operational effects as those of the fourth to seventh aspects can be obtained. .

According to the microwave integrated circuit of the eleventh aspect, the same effect as in the eighth aspect is provided by arranging the trimming region according to the ninth or tenth aspect near the line on the ground electrode side of the MIM type capacitor. Is obtained.

According to the microwave integrated circuit of the twelfth aspect, the short stub is formed by changing the line width by processing the trimming region formed in a region sufficiently larger than the gap width dimension of the coplanar line. Even in the case of extension, the characteristic impedance of the line can be kept constant.

[0020]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A first embodiment of the present invention will be described below with reference to FIGS. FIG. 2 shows an equivalent circuit of the amplifier circuit 10 configured as a microwave integrated circuit of the present invention. On the input side and output side of the HEMT 11, matching circuits 12 and 13 are arranged. The input-side matching circuit 12 includes transmission lines 15a and 15b connecting between the input terminal 14 and the gate of the HEMT 11, and a short stub 16 connecting between the middle of the transmission lines 15a and 15b and the ground. Have been.

The output-side matching circuit 13 includes a transmission line 18a, 18b connecting the output terminal 17 and the drain of the HEMT 11, and a short circuit connecting the middle of the transmission line 18a, 18b to the ground. And a stub 19. The amplifier circuit 10 is, for example, an InP
It is formed on a single semiconductor substrate 20 (see FIG. 1) made of a so-called MMIC (Monolithic Microwave In).
integrated circuit).

FIG. 1 (a) is a diagram showing a cut-out portion of the matching circuit 12 on the input side of the amplifier circuit 10 around the short stub 16. FIG. FIG. 1B is a view showing A in FIG.
It is a figure which shows the -A 'cross section. In FIG. 1A,
The transmission lines 15a and 15b of the matching circuit 12 are formed of coplanar lines, and specifically, a conductor 21a extending in the left-right direction in FIG. 1A, and a gap 21b on both sides of the conductor 21a. And a ground conductor 22 arranged.

The extension of the conductor 21a at the left end in FIG. 1 is connected to the input terminal 14, and the extension at the right end is the HEMT 1
1 gate. The short stub 16 of the matching circuit 12 is formed of a coplanar line. Specifically, the conductor 16a extends downward from the center of the conductor 21a and is connected to the ground conductor 22;
6a and a ground conductor 22 disposed on both sides of the gap portion 16b via the gap portion 16b. The conductors 21a and 1
The width of 6a is Ws, and the width of gaps 21b and 16b is Wg.

On the other hand, the ground conductors 22 on both sides of the conductor 21a and the conductor 16a are connected by a conductor 23.
The conductor 23 is disposed below the conductor 21a and the conductor 16a via an insulating film.

Now, trimming areas 26, 26 are provided around the connection portion 26a of the ground conductor 22 to which the conductor 16a of the short stub 16 is connected. The trimming regions 26, 26 are formed on both sides of a portion 16c of the conductor 16a extending downward as regions having the same width as the gap portion 16b. The trimming regions 26, 26 are made of, for example, a metal deposition film 24, and are formed so as to be considerably thinner (specifically, about 0.2 μm) than other portions of the ground conductor 22. (See FIG. 1B). The trimming regions 26, 26 and the extension 16c of the conductor 16a are electrically connected to the ground conductor 22 and are a part of the ground conductor.

The process of forming the AA 'sectional structure shown in FIG. 1B will be schematically described with reference to FIG. FIG.
1 shows only the left half of FIG. First, a metal deposition film 24 is formed on a semiconductor substrate 20 to a thickness of about 0.2 μm in a necessary region by vapor deposition (FIG. 3).
(A)). This film thickness is set to be equal to or greater than the skin depth at the frequency of the signal handled by the amplifier circuit 10, so that the function of the metal deposition film 24 as a ground conductor is ensured.

Next, a protective film (nitride film, FIG.
25A is formed (not shown in FIG. 3A), and a portion serving as a contact region of the metal deposition film 24 is removed (FIG. 3B).
reference). Thereafter, a (lower) resist LR for plating is applied to a portion to be the trimming region 26 (see FIG. 3C), and then a power supply electrode layer K is formed as an upper layer (FIG. 3).
(D)). Further, after forming the upper layer resist UR so as to cover the portion where the lower layer resist LR is applied (see FIG. 3E), Au plating is performed (see FIG. 3F).
When plating is completed, the upper and lower resist layers UR and L
R and the feed electrode layer K are removed (FIGS. 3 (g) to 3 (i)).
reference).

As described above, the conductor 16a, its extension 16c (and the conductor 21a), and the ground conductor 22 are formed to a thickness of about 5 μm. The metal deposition film 24 is, for example, a single Au layer, or Ti / Mo / Au, Ti /
It is composed of a plurality of layers such as Ni / Au and Ti / Au. The matching circuit 13 on the output side has the same configuration.

Next, the operation of this embodiment will be described.
The metal deposition film 24 in the trimming region 26 configured as described above is evaporated by irradiating a laser, or is removed by using mechanical means such as tweezers or a needle. , And the reactance is trimmed.

In this case, if the trimming regions 26, 26 on both sides of the extension 16c of the conductor 16a are substantially uniformly removed from the connection portion 26a in accordance with the width Wg of the gap 16b, the width Ws of the conductor 16a and the width Ws are reduced. It is possible to change the length of the short stub 16 and trim (adjust) only its reactance without changing the impedance of the transmission lines 15a and 15b determined by the ratio with Wg.

As described above, according to the present embodiment, in the matching circuit 12 provided in the amplifier circuit 10, the trimming region 26 is formed around the connection portion 26a where the conductor 16a of the short stub 16 is connected to the ground conductor 22. To the metal deposition film 24
It consisted of. Therefore, unlike the related art, it is possible to easily remove the metal deposited film 24 formed extremely thinner than the ground conductor 22 using a laser, tweezers, or the like, thereby improving the trimming workability. And trimming with higher precision can be performed.

Further, according to the present embodiment, the width dimension of the trimming region 26 is adjusted to the gap portion 16 of the short stub 16.
b, the trimming areas 26, 26 on both sides of the short stub 16 are trimmed substantially evenly, so that the transmission lines 15a, 15b are trimmed.
Of the short stub 16 can be trimmed without changing the impedance of the short stub 16.

FIG. 4 shows a second embodiment of the present invention. The same parts as those in the first embodiment are denoted by the same reference numerals, and the description thereof will be omitted. Only the different parts will be described below. FIG.
The matching circuit 12 shown in FIG.
In this embodiment, island-shaped metal thick films 27 having substantially the same shape are arranged at substantially equal intervals on the metal vapor-deposited film 24 that constitutes No. 6 to form trimming regions 28. The metal thick film 27
The thickness is larger than the metal deposition film 24 (for example, substantially the same as the thickness of the ground conductor 22), and is formed by plating.

Next, the operation of the second embodiment will be described. When trimming the matching circuit 12 using, for example, a laser, the island-shaped metal thick films 2 arranged at substantially equal intervals are used.
Reference numeral 7 is a scale for trimming, and the operator can refer to these scales as a guide for trimming work (for example, how many scales to trim). The metal thick film 27 can be easily removed using a wire bonder, a wedge bonder, or the like. Further, since the thick metal film 27 has substantially the same thickness as the ground conductor 22, even when the trimming region 28 is formed, an increase in the resistance of the ground conductor is suppressed. Note that the matching circuit 13 has the same configuration.

As described above, according to the second embodiment, the island-shaped metal thick film 27 having substantially the same shape is formed on the metal deposition film 24.
Are arranged at substantially equal intervals to form the trimming region 28, so that the trimming workability can be further improved and the impedance of the ground conductor can be maintained at a low value.

FIG. 5 shows a third embodiment of the present invention. The same parts as those in the first embodiment are denoted by the same reference numerals, and description thereof will be omitted. Only different parts will be described below. FIG.
The matching circuit 12 shown in FIG.
A plurality of perforations 29 are provided at equal intervals in the metal vapor deposition film 24 constituting 6 to form a scale for trimming, and the trimming areas 30 are formed.

FIG. 5B is a view showing a cross section taken along line BB 'of FIG. 5A. A perforation 29 is provided in the metal deposition film 24, and a protective film 25 is formed thereon. According to the fifth embodiment configured as described above, the perforations 29 provided at equal intervals are used as trimming scales.
The same effects as in the second embodiment can be obtained.

Further, as in the third embodiment, the metal deposition film 2
Instead of providing a plurality of perforations 29 at equal intervals in 4 to form a scale for trimming, a scale for trimming may be formed as shown in FIGS. 6 to 8 are diagrams corresponding to FIG. 5B.

FIG. 6 shows a fourth embodiment of the present invention in which perforations 31 similar to those of the third embodiment are provided in a protective film 25, which is an upper layer of the metal deposition film 24.

FIG. 7 shows a fifth embodiment of the present invention, in which the active layer on the surface of the semiconductor substrate 20 is etched in a mesa shape to form a plurality of projections 32 corresponding to the positions where the perforations 29 are provided in the second embodiment. Is used. On the semiconductor substrate 20a, the metal deposition film 24, the protective film 25, and the ground conductor 22 are formed by the same steps as in the first embodiment. Then, the metal deposition film 24 (and the protective film 25) in the portion that overlaps the convex portion 32 of the semiconductor substrate 20a also has the convex portion 3.
3 are formed, and a scale that can be visually recognized at the time of trimming is formed.

FIG. 8 shows a sixth embodiment of the present invention. In contrast to the fifth embodiment, the semiconductor substrate 20 is etched to form a plurality of holes corresponding to the positions of the perforations 29 of the second embodiment. The semiconductor substrate 20b on which the recess 34 is formed is used. A concave portion 35 is also formed in the portion of the metal deposition film 24 corresponding to the concave portion 34 on the semiconductor substrate 20b, and a scale that can be visually recognized at the time of trimming is formed. According to the fourth to sixth embodiments configured as described above, effects similar to those of the second embodiment can be obtained.

FIG. 9 shows a seventh embodiment of the present invention. The same parts as those in the first embodiment are denoted by the same reference numerals, and the description thereof will be omitted. Only the different parts will be described below. FIG.
The matching circuit 12 shown in FIG.
Instead of using 4 to form the trimming area 26, a plurality of perforations 36 are provided in the ground conductor 22 to form trimming areas 37, 37.

The hole 36 has a width W of the gap 16b.
Two rows are provided in the extension direction of the short stubs 16 at substantially the same interval as g, and the arrangement in the extension direction is also substantially equal. These perforations 36 are formed by applying a resist when forming the ground conductor 22 by plating.
Further, a portion where the perforation 36 is formed in the ground conductor 22 may be replaced with a metal vapor deposition film and a perforation may be provided.

Next, the operation of the seventh embodiment will be described. The heat conduction of the trimming area 37 in which the plurality of perforations 36 are provided in the ground conductor 22 is lower than that of the other ground conductors 22. Therefore, the trimming area 37 can be trimmed by irradiating, for example, a laser from the end of the gap portion 16b, that is, the connecting portion 26a, to a small distance between each of the perforations 36. Further, since the perforations 36 are arranged at substantially equal intervals, it can be used as a scale for trimming. As described above, according to the seventh embodiment, substantially the same effects as those of the second to sixth embodiments can be obtained.

FIGS. 10 and 11 show an eighth embodiment of the present invention. The same parts as those in the first embodiment are denoted by the same reference numerals, and description thereof will be omitted. Hereinafter, only different parts will be described. . FIG. 10 shows an amplifier circuit 3 as a microwave integrated circuit.
8 shows an electrical configuration of the second embodiment. The matching circuits 12 and 13 on the input side and output side of the HEMT 11 in the amplifier circuit 10 of the first embodiment shown in FIG.
Has been replaced by At the tip of the short stubs 16 and 19 of the matching circuits 39 and 40, MIM (Metal Ins
ulator Metal) type capacitors (hereinafter simply referred to as capacitors) 41 and 42 are formed.

Such capacitors 41 and 42 are used to shorten the line length of the short stub as in the eighth embodiment, or when a bias application line is connected to the tip of the stub as described later. It is formed to prevent high frequency components from flowing into the DC circuit section. Less than,
The matching circuit 39 will be described with reference to FIG.

FIG. 11 (b) is a diagram showing C in FIG. 11 (a).
It shows a section taken along the line C-C '. In FIG. 11B, a ground electrode 43a of a capacitor 41 made of a metal deposition film 43 is formed on a semiconductor substrate 20, and the ground electrode 43a is connected to the ground conductor 22. The portion where the ground electrode 43a and the conductor 16a of the short stub 16 face each other via the protective film 44 constitutes the capacitor 41. The process for forming these is described in the first section.
This is the same as that described in the embodiment.

The trimming regions 45, 45 are formed as a part of the ground conductor by the metal deposition film 43 as in the first embodiment, and as shown in FIG.
The short stub 16 is formed so as to be continuous with the gap portions 16b on both sides. The configuration of the matching circuit 40 is the same.

According to the eighth embodiment configured as described above, like the matching circuit 39 provided in the amplifier circuit 38,
Even when the capacitor 41 is formed at the tip of the short stub 16, the metal deposition film 4 in the trimming region 45 is formed.
By easily removing 3, high-precision trimming can be performed.

FIG. 12 shows a ninth embodiment of the present invention, in which the same parts as those of the eighth embodiment are denoted by the same reference numerals, and the description thereof will be omitted. Only the different parts will be described below. The matching circuit 39 shown in FIG. 12 has an island-shaped metal thick film 46 similar to that of the second embodiment disposed on the metal deposition film 43 constituting the trimming region 45 of the eighth embodiment.
7, 47.

According to the ninth embodiment configured as described above, the same effect as in the second embodiment can be obtained for the matching circuit 39 in which the capacitor 41 is formed at the tip of the short stub 16. Can be

FIG. 13 shows a tenth embodiment of the present invention. The same parts as those of the eighth embodiment are denoted by the same reference numerals, and description thereof will be omitted. Only different parts will be described below.
A matching circuit 39 shown in FIG. 13 has a plurality of perforations 48 formed at equal intervals in the metal deposition film 43 forming the trimming region 45 of the eighth embodiment, similarly to the third embodiment or the fourth to sixth embodiments. To form a scale for trimming, which is used as trimming areas 49, 49.

According to the tenth embodiment configured as described above, the third to sixth embodiments are applicable to the matching circuit 39 in which the capacitor 41 is formed at the tip of the short stub 16.
The same effect as that of the embodiment can be obtained.

FIG. 14 shows an eleventh embodiment of the present invention. The same parts as those of the eighth embodiment are denoted by the same reference numerals and the description thereof will be omitted. Only the different parts will be described below. The matching circuit 39 shown in FIG. 14 is different from the eighth embodiment in that a plurality of perforations 48a are directly provided at substantially equal intervals in the ground conductor 22 in the same manner as in the seventh embodiment. 49a, 49a.

According to the eleventh embodiment configured as described above, the same effect as in the seventh embodiment can be obtained for the matching circuit 39 in which the capacitor 41 is formed at the tip of the short stub 16. Can be

FIGS. 15 and 16 show a twelfth embodiment of the present invention. The same parts as those in the first embodiment are denoted by the same reference numerals, and description thereof will be omitted. Hereinafter, only different parts will be described. . FIG. 15 shows an electrical configuration of the amplifier circuit 50 as a microwave integrated circuit. In the amplifier circuit 10 of the first embodiment shown in FIG. 2, the matching circuits 12 and 13 on the input side and the output side of the HEMT 11 are replaced by matching circuits 51 and 52.

MIM type capacitors 53 and 54 are formed at the tips of the short stubs 16 and 19 of the matching circuits 51 and 52, respectively. 56 and bias application terminals 55a and 56a are provided.

FIG. 16A is a diagram showing a portion of the matching circuit 51 cut out from the amplifier circuit 50, and FIG.
It is a figure which shows the DD 'cross section of FIG.16 (a). The conductor 23 for connecting the ground conductor 22, the ground electrode 57 of the capacitor 53, the protective film 58, the conductor 16a, the bias application line 55, and the ground conductor 22 are sequentially formed on the semiconductor substrate 20 in the same process as in the first embodiment. Has formed.

The ground electrode 57 is arranged so as to be orthogonal to the short stub 16, that is, symmetrically on both sides of the conductor 16 a of the short stub 16 in FIG. The MIM-type capacitor 53 is formed in a portion where the ground electrode 57 and the conductor 16a face each other via the protective film 58. As shown in FIG. 16A, a bias application line 55 having a width smaller than the width Ws of the short stub 16 is connected to the tip of the short stub 16.

In this matching circuit 51, the trimming regions 59, 59 are, as in the trimming region 26 of the first embodiment, formed as a part of the ground conductor 22 and have the same metal deposition film 60 as the width Wg of the gap portion 16b. The short stub 16 is disposed on both sides of the short stub 16 so as to be bilaterally symmetrical and intersect perpendicularly with the gap 16b.
Further, the left and right trimming regions 59, 59 are respectively provided on both sides of the ground electrode 57 as the center, with the width dimension Wc of the ground electrode 57 therebetween.
They are arranged at the same intervals as. Note that the matching circuit 52 has the same configuration.

According to the twelfth embodiment configured as described above, like the matching circuit 51 provided in the amplifier circuit 50, the bias application line 55 and the capacitor 53 are formed at the tip of the short stub 16. In this case, the same effect as in the first embodiment can be obtained.

The thirteenth to fifteenth embodiments shown in FIGS. 17 to 19 show the second, third and fourth embodiments when the basic configuration of the matching circuit 51 is the same as that of the twelfth embodiment.
This corresponds to the seventh to seventh embodiments.

In the thirteenth embodiment shown in FIG. 17, a thick metal film 61 similar to that of the second embodiment is provided on the metal deposition film 60 in the trimming region 59 of the twelfth embodiment.
2,62.

In the fourteenth embodiment shown in FIG. 18, perforations 63 similar to those of the third embodiment are provided in the metal deposition film 60 in the trimming region 59 of the twelfth embodiment, and the trimming regions 64, 64 are provided.
It is what it was. Instead of the perforations 63, as in the fourth to sixth embodiments, perforations may be provided in the protective film 58, or convex portions or concave portions may be provided in the metal deposition film 60.

In the fifteenth embodiment shown in FIG. 19, a plurality of perforations 65 are provided in the ground conductor 22 in place of the trimming region 59 of the twelfth embodiment to form trimming regions 66,66.

As described above, according to the thirteenth to fifteenth embodiments, like the matching circuit 51 provided in the amplifier circuit 50, the bias application line 55 and the MIM type capacitor 53 are provided at the tip of the short stub 16. , The same effects as those of the second, third and fourth to seventh embodiments can be obtained.

FIG. 20 shows a sixteenth embodiment of the present invention. Only parts different from the first embodiment will be described. The matching circuit 12a of the sixteenth embodiment is provided in place of the matching circuit 12 in the amplifier circuit 10 shown in FIG.

Although the trimming area 26 of the first embodiment is formed in a rectangular shape having the same width as the width Wg of the gap portion 16b, the trimming area of the matching circuit 12a (made of a metal deposition film). ) 67 is the gap portion 16 b
20 is formed in a trapezoidal shape such that the width dimension gradually increases from Wg downward in FIG. The extension 16c following the conductor 16a of the short stub 16 is
It is made of the same Au plating as the ground conductor 22 with the width dimension Ws.

Next, the operation of the sixteenth embodiment will be described. It is assumed that the short stub 16 of the matching circuit 12a configured as described above is extended while changing its conductor width. For example, the final transmission line width is Ws 'and the gap width is Wg' (Ws '> Ws, Wg'> W
g, Wg / Ws = Wg '/ Ws').

In this case, the trimming area 67 is trimmed as shown by a broken line in FIG. That is, the conductor width of the extended portion (including the extension portion 16c from the end of the conductor 16a) increases linearly from Ws to Ws' and is formed on both sides of the conductor accordingly. Trimming is performed so that the width of the gap portion linearly increases from Wg to Wg ′.

At this time, assuming that the conductor width and the gap width that change in the trimming region 67 are Wsx and Wgx, respectively, the characteristic impedance is reduced by trimming so that the ratio Wgx / Wsx of the two is always equal to Wg / Ws. The short stub 16 can be extended while keeping it constant. For example, this is effective when a short stub needs to be connected to coplanar lines having different conductor widths in a circuit after the integrated circuit is formed.

As described above, according to the sixteenth embodiment, since the trimming region 67 is formed in a region larger than the width of the gap portion 16b of the coplanar line constituting the short stub 16, the characteristic impedance is kept constant. The short stub 16 can be extended, and the short stub 16 can be connected to coplanar lines having different line widths in the circuit even after the integrated circuit is manufactured.

The present invention is not limited to the embodiment described above and shown in the drawings, and the following modifications or extensions are possible. In the second embodiment, the thick metal films 27 having substantially the same shape are arranged at substantially equal intervals. However, the thick metal films need not necessarily be formed to have substantially the same shape, and need not necessarily be arranged at substantially equal intervals. In short, it is sufficient to arrange a plurality of islands, and even in such a case, the effect of reducing the impedance of the trimming region by the thick metal film can be achieved. In the seventh and eleventh embodiments, instead of providing the plurality of perforations 36 and 48 a in the ground conductor 22, a plurality of slits may be provided in the extension direction of the short stub 16 in a broken line shape. Also, in the eleventh embodiment, a slit may be provided instead of the perforation 65. An MIM capacitor may be formed at the tip of the short stub 16 in the sixteenth embodiment.

Further, the trimming area 67 of the sixteenth embodiment is used.
Metal thick films may be arranged in substantially the same shape and at substantially equal intervals as in the second embodiment, or a plurality of metal thick films may be simply arranged in an island shape on the metal vapor deposited film. Further, a plurality of perforations are provided on the metal deposition film in the trimming region 67 of the sixteenth embodiment as in the third embodiment, or a plurality of holes are formed in the protective film on the metal deposition film as in the fourth embodiment. Perforations may be provided, or the substrate may be processed as in the fifth or sixth embodiment, and a convex or concave portion may be provided in the metal deposition film to form a scale for trimming. Also, the trimming area 37 of the seventh embodiment is
It may be configured like the trimming area 67 of the sixth embodiment.

The trimming is not limited to the method of keeping the characteristic impedance of the coplanar line constant. The trimming is made smaller than the gap width Wg to reduce the impedance.
When the trimming region 67 is formed as in the embodiment,
The impedance may be increased by making the trimming dimension larger than the gap width dimension Wg while keeping the transmission line width Ws constant. By doing so, for example, a reflector or the like can be formed.
Instead of the semiconductor substrates 20, 20a and 20b, a dielectric substrate may be used.

[Brief description of the drawings]

FIG. 1A is a diagram illustrating a cut-out portion of an input-side matching circuit portion in an amplifier circuit according to a first embodiment of the present invention;
(B) is a view showing an AA ′ cross section of (a).

FIG. 2 is an electrical configuration diagram of an amplifier circuit.

FIG. 3 is a diagram showing a manufacturing process when an amplifier circuit is created.

FIG. 4 is a view corresponding to FIG. 1A showing a second embodiment of the present invention.

FIG. 5A is a diagram illustrating a cut-out portion of an input-side matching circuit in an amplifier circuit according to a third embodiment of the present invention;
(B) is a diagram showing a BB 'cross section of (a).

FIG. 6 is a view corresponding to FIG. 5B showing a fourth embodiment of the present invention.

FIG. 7 is a view corresponding to FIG. 5 (b) showing a fifth embodiment of the present invention.

FIG. 8 is a view corresponding to FIG. 5 (b) showing a sixth embodiment of the present invention.

FIG. 9 is a view corresponding to FIG. 1A showing a seventh embodiment of the present invention.

FIG. 10 is a view corresponding to FIG. 2, showing an eighth embodiment of the present invention;

11A is a diagram showing a cut-out portion of a matching circuit portion on the input side in an amplifier circuit, and FIG. 11B is a diagram showing C- in FIG.
Diagram showing C 'section

FIG. 12 is a view corresponding to FIG. 11A showing a ninth embodiment of the present invention.

FIG. 13 is a view corresponding to FIG. 11A showing a tenth embodiment of the present invention.

FIG. 14 is a view corresponding to FIG. 11 (a) showing an eleventh embodiment of the present invention.

FIG. 15 is a view corresponding to FIG. 2, showing a twelfth embodiment of the present invention;

FIG. 16A is a diagram cut out and illustrating a matching circuit portion on the input side in the amplifier circuit, and FIG. 16B is a diagram illustrating D- in FIG.
Diagram showing D 'section

FIG. 17 is a view corresponding to FIG. 16 (a) showing a thirteenth embodiment of the present invention.

FIG. 18 is a view corresponding to FIG. 16A showing a fourteenth embodiment of the present invention.

FIG. 19 is a view corresponding to FIG. 16A showing a fifteenth embodiment of the present invention;

FIG. 20 is a view corresponding to FIG. 1A showing a sixteenth embodiment of the present invention.

FIG. 21 is a diagram corresponding to FIG. 2 showing a conventional technique.

FIG. 22 is a perspective view schematically showing a configuration of a coplanar line.

[Explanation of symbols]

10 is an amplifier circuit (microwave integrated circuit), 12 and 12a
And 13 are matching circuits, 16 is a short stub, 16a is a conductor, 16b is a gap, 20, 20a and 20b are semiconductor substrates, 21a is a conductor, 21b is a gap, 22
Is a ground conductor, 24 is a metal deposition film, 25 is a protective film, 26 is a trimming area, 26a is a connection portion, 27 is a thick metal film, 2
8 is a trimming area, 29 is a perforation, 30 is a trimming area, 31 is a perforation, 33 is a projection, 35 is a recess, 36 is a perforation, 37 is a trimming area, 38 is an amplifier circuit (microwave integrated circuit), and 39 and 40. Is a matching circuit, 41 is a MIM
Type capacitor, 43 is a metal deposition film, 43a is a ground electrode,
44 is a protective film, 45 is a trimming area, 46 is a thick metal film, 47 is a trimming area, 48 and 48a are perforations,
9 and 49a are trimming areas, 50 is an amplifier circuit (microwave integrated circuit), 51 and 52 are matching circuits, 53 and 54 are MIM capacitors, 55 and 56 are bias application lines, 57 is a ground electrode, and 58 is protection. Film, 59 is a trimming area, 60 is a metal deposition film, 61 is a thick metal film, 62
Denotes a trimming area, 63 denotes a hole, 64 denotes a trimming area, 65 denotes a hole, and 66 and 67 denote trimming areas.

Claims (12)

[Claims] 1. A microwave integrated circuit in which a short stub made of a coplanar line is provided on a dielectric or semiconductor substrate, wherein a trimming area capable of being trimmed around a connection part of a ground conductor to which the conductor of the short stub is connected. A microwave integrated circuit, comprising: 2. The microwave integrated circuit according to claim 1, wherein said trimming region is formed of a metal deposition film. 3. The microwave integrated circuit according to claim 2, wherein a plurality of thick metal films having a thickness larger than that of the metal deposition film are arranged on the metal deposition film in an island shape. 4. The microwave according to claim 3, wherein said plurality of island-shaped metal thick films are formed in substantially the same shape and are arranged at substantially equal intervals to form said scale for trimming. Integrated circuit. 5. The microwave integrated circuit according to claim 2, wherein perforations are provided at substantially equal intervals in said metal vapor-deposited film to form said trimming scale. 6. The microwave integrated circuit according to claim 2, wherein a protective film is formed on the metal vapor-deposited film, and the protective film is provided with holes at substantially equal intervals to form the scale for trimming. circuit. 7. The microwave integrated circuit according to claim 2, wherein convex portions or concave portions are provided on the metal vapor-deposited film at substantially equal intervals to form the scale for trimming. 8. The method according to claim 1, wherein the conductor of the short stub is connected to a ground conductor via a MIM capacitor, and the trimming region is disposed near a line on the ground electrode side of the MIM capacitor. The microwave integrated circuit according to any one of claims 1 to 7, wherein 9. The microwave integrated circuit according to claim 1, wherein said trimming region is formed by providing a large number of holes or slits in said ground conductor. 10. The microwave integrated circuit according to claim 10, wherein said trimming scale is formed by arranging said perforations or slits at substantially equal intervals. 11. A configuration in which the conductor of the short stub is connected to a ground conductor via a MIM-type capacitor, and the line on the ground electrode side of the MIM-type capacitor is symmetrically arranged on both sides of the conductor of the short stub. 11. The microwave integrated circuit according to claim 9, wherein the trimming region is arranged near a line on the ground electrode side of the MIM capacitor. 12. The microwave integrated circuit according to claim 1, wherein said trimming region is formed in a region sufficiently larger than a width dimension of a gap of said coplanar line.