JPH10173317A - Transfer method and compression system - Google Patents

Abstract

PROBLEM TO BE SOLVED: To avoid long time occupation of an expensive compression system, while preventing a bubble from being captured between an insulating material part and a board by forming a closed region forming pattern having a conductor part and an organic insulating material part in a non-wiring pattern in addition to a wiring pattern having a conductor part and an organic insulating material part. SOLUTION: A conductive plate is subjected to plating using the a negative pattern formed thereon, thus forming a thin film conductor part. An organic insulating material part having viscosity is then formed at the plated conductor part by electrodeposition. At that stage, a wiring pattern 210 having a conductor part and an organic insulating material part and a closed region forming pattern 220 being transferred to a wiring board 150 are formed on the conductive plate. The conductive plate, on which a pattern having a conductor part and an organic insulating material part is formed is referred to transfer plate while a pattern for forming a closed ring other than the wiring pattern 210 is referred to as a closed region forming pattern 220 and the region surrounded by that pattern is referred to as a closed region 225.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a transfer method and an apparatus for manufacturing a wiring board, and more particularly to a method for manufacturing a circuit board for a semiconductor device, a printed board, and a wiring board for a magnetic head suspension in a magnetic disk drive. The present invention relates to a transfer method and a pressure bonding apparatus.

[0002]

2. Description of the Related Art Wiring boards which have been conventionally used as members for assembling semiconductor devices have been required to integrate semiconductors more and more and to mount them with high functions due to the trend toward higher performance and lighter and thinner. That is, more gates can be accommodated in the substrate,
In addition, it is required to reduce the substrate size itself. For this reason, in the production of a wiring board on which a semiconductor element is mounted, various production methods have been developed in order to respond to this. One method is to form a wiring pattern made of a conductor by plating one surface of a conductive plate. A method of manufacturing a wiring board by transfer, as shown in FIG. 6, is known in which the wiring board is formed and transferred to a wiring board to manufacture the wiring board. This method will be briefly described. First, a negative pattern serving as a plating mask is formed on one surface of a conductive plate so that only a predetermined region corresponding to a wiring pattern is exposed. The method for producing this negative pattern is not particularly limited, but generally, it is produced by a photolithography method using a photomask. That is,
Usually, the photosensitive resist 62 is applied to one surface of the conductive plate 610.
0 (FIG. 6A), and then exposed through a photomask 625 having a pattern corresponding to the wiring pattern (FIG. 6A).
(B)) The negative pattern 621 was obtained by developing. (FIG. 6C) Next, the negative pattern 621 is used as a plating mask.
Only the exposed area 611 of the conductive plate 610 was plated to form a thin conductor 630 (FIG. 6D).
Thereafter, an organic insulating material portion 640 having adhesiveness is further formed on the conductor portion 630 formed by plating by an electrodeposition method. (FIG. 7E) Next, the conductive plate 610 is attached to the wiring substrate 650 in the air using the crimping device 660, and the organic insulating material portion 640.
A crimping step of crimping through the step is performed. (FIG. 6 (f)) At this time, when it is necessary to align the transfer plate 610A in which the conductor portion 630 and the organic insulating material portion 640 are formed on the conductive plate 610 with the wiring substrate 650. And a conductive plate 610 using a crimping device having an alignment function.
After the alignment between the substrate and the wiring substrate 650 is performed, pressure bonding is performed. After the pressure bonding, the curing of the organic insulating material portion 640 is completed, and then the conductive plate 610 and the wiring substrate 6 are pressed by the pressure bonding device.
50 are integrally taken out (FIG. 6G), and only the conductive plate 610 is peeled off to form a wiring substrate 650A. (FIG. 6 (h)) However, in the method shown in FIG.
Since the organic insulating material portion 640 is used as an adhesive, the curing reaction must be completed by applying pressure and heat, and the bonding must be completed. Therefore, the conductor portion 630 and the organic insulating material are placed on the conductive plate 610. Transfer plate 6 having a portion 640
When it is necessary to align the 10A with the wiring substrate 650, an expensive crimping device having an alignment mechanism is required, and the crimping device is occupied for one transfer operation for a long time. , Cost and crimping equipment throughput. Further, since pressure bonding is performed in the air, bubbles may be buried between the organic insulating material portion and the wiring substrate, which has been a problem.

[0003]

As described above, a wiring pattern made of a conductor is formed by plating on one surface of a conductive plate as shown in FIG. 7, and this is transferred to a wiring board to form a wiring board. In the method of manufacturing a wiring board by transfer, when it is necessary to align the wiring board with the wiring board prior to crimping, an expensive crimping apparatus equipped with an alignment mechanism is required, and one transfer is performed. Since the crimping device is occupied for a long time in the work, there is a problem in terms of cost and throughput of the crimping device. Also, in terms of quality, there is a problem that air bubbles are buried between the organic insulating material portion and the wiring substrate, and a solution has been required. The present invention, under such circumstances, from a transfer plate in which a wiring pattern having a structure in which a conductor portion and an organic insulating material portion are laminated on a conductive plate in this order, a wiring pattern is passed through the organic insulating material portion. Transfer onto the wiring board,
In the method of forming the wiring portion of the wiring substrate, even when the transfer plate needs to be aligned with the wiring substrate, an expensive crimping device is not occupied for one transfer operation for a long time, and An object of the present invention is to provide a method in which bubbles are not embedded between an organic insulating material portion and a wiring substrate during transfer. At the same time, an object of the present invention is to provide a crimping apparatus capable of performing such a method.

[0004]

According to a transfer method of the present invention, a wiring pattern is formed from a transfer plate having a wiring pattern having a structure in which a conductor portion and an organic insulating material portion are laminated on a conductive plate in this order. A method of forming a wiring portion of a wiring board by transferring the resist film on a conductive plate, at least in order of (a) being provided with a resist film on a conductive plate so that only a predetermined region is exposed. A negative pattern forming step of forming a negative pattern, (b) a plating step of plating the conductive pattern on which the negative pattern has been formed by using the negative pattern as a plating mask to form a thin-film conductor, and (c) )
An electrodeposition step of forming an organic insulating material having adhesiveness on a conductor portion formed by plating by an electrodeposition method,
(D) a pressing step of pressing a transfer plate comprising a conductive plate, a conductor portion formed on the conductive plate, and an organic insulating material portion onto a wiring board via the organic insulating material portion; In addition to the wiring pattern consisting of the conductor part and the organic insulating material part, a closed area forming pattern consisting of the conductor part and the organic insulating material part, which is closed and creates a closed area, is formed in an area other than the wiring pattern area on the substrate for use. When performing pressure bonding in the pressure bonding step, it is necessary to evacuate the surrounding closed region formed by the closed region forming pattern in advance, and then press-bond the transfer plate to the wiring substrate via the organic insulating material portion. It is a feature. The closed region is a region including a wiring pattern region.
Further, the wiring substrate in the above is a metal plate. Further, the above-mentioned wiring board is a wiring board on which a semiconductor element is mounted. Further, the conductor portion formed by plating as described above is characterized in that it is formed of a single metal such as copper, gold, silver, or the like, or a conductive electrodeposited resin, or a laminate of these layers. .

[0005] The transfer device of the present invention is a pattern formed by sequentially laminating a conductor portion and an organic insulating material portion. Is a pressing device for pressing a transfer plate provided on one surface of a pattern formed in a non-region on a wiring board through an organic insulating material portion of the pattern, the transfer plate holding the transfer plate Part, a wiring substrate holding part for holding the wiring substrate, and an enclosure for evacuating at least the transfer plate and the wiring substrate with the transfer plate and the wiring substrate separated from each other. A frame unit, a vacuum control unit for performing vacuum control, and a press unit for pressing the transfer plate from the back side where the pattern of the transfer plate is not provided, and pressing the transfer plate against the wiring substrate; Transfer plate between the section and the wiring board holding section. It is characterized in that the wiring board is to sandwiched crimped through an organic insulating material portion. And in the above, the wiring substrate holding part is located on the lower side, on which the wiring substrate is mounted, and on the upper side of the wiring substrate holding part, a vertically movable pressurizing part is provided. The frame portion is supported by the pressing portion and moves toward the wiring substrate holding portion, and the front end of the frame portion on the wiring substrate side is in close contact with an elastic O-ring so as to be in contact therewith. The vacuum evacuation control unit includes a vacuum / vacuum release pipe provided outside the wiring substrate region of the wiring substrate holding unit and on the transfer plate side inside the region surrounded by the frame portion. It is characterized in that it is evacuated through the air.
Further, in the above, there is provided an alignment mechanism for aligning the transfer plate and the wiring substrate, and after positioning the transfer plate and the wiring substrate, evacuating and crimping. It is.

[0006]

According to the transfer method of the present invention, by adopting such a structure, a pattern is formed on a conductive plate from a transfer plate having a structure in which a conductor portion and an organic insulating material portion are laminated in this order. Transferred to the substrate via the insulating material,
In the method of forming the wiring portion of the wiring board, even when it is necessary to perform alignment with respect to the wiring substrate, an expensive crimping device is not occupied for a long time in one transfer operation, and the transfer operation is not performed. In addition, it is possible to provide a method in which air bubbles are not embedded between the organic insulating material portion and the wiring substrate. More specifically, at least in order, (a) a negative pattern forming step of forming a negative pattern formed of a resist film on a conductive plate so as to expose only a predetermined area; and (b) a negative pattern forming step. A plating step of forming a thin-film conductor portion by plating on the conductive plate on which is formed, using the negative pattern as a plating mask; and (c)
An electrodeposition step of forming an organic insulating material having adhesiveness on a conductor portion formed by plating by an electrodeposition method,
(D) a crimping step of crimping a transfer plate comprising a conductive plate, a conductor portion formed on the conductive plate, and an organic insulating material portion to a wiring board via the organic insulating material portion; On the wiring board, in addition to the wiring pattern composed of the conductor portion and the organic insulating material portion, a closed region creating pattern composed of the conductor portion and the organic insulating material portion and closed to create a closed region is formed in an area other than the wiring pattern region. In the press-bonding step, in the press-bonding step, when the press-bonding is performed, the enclosing closed area formed by the closed-area forming pattern is evacuated in advance, and then the transfer plate is press-bonded to the wiring substrate via the organic insulating material portion. This has been achieved by: Specifically, in addition to a wiring pattern formed of a conductor portion and an organic insulating material portion, a closed region forming pattern formed of a conductor portion and an organic insulating material portion, which is closed and forms a closed region, is formed on a conductive plate. Not formed in the area, and, at the time of pressure bonding in the transfer process,
After evacuating the surrounding closed area formed by the closed area forming pattern, the transfer plate is pressed against the wiring substrate via the organic insulating material portion, and the transfer plate and the wiring substrate are organically insulated. When pressure-bonded through the material portion, a vacuum-sealed portion is formed, which is hermetically sealed while being evacuated by the transfer plate, the closed region forming pattern, and the wiring substrate. In this state, a portion other than the vacuum-sealed portion is formed. Even if the vacuum is released
The positional relationship between the transfer plate and the wiring board is ensured in the state at the time of crimping, and the position between the transfer plate and the wiring board is securely fixed. Then, after the evacuation is performed, pressure bonding is performed, so that bubbles are not embedded between the organic insulating material portion and the wiring substrate during the pressure bonding. Even if the wiring substrate is a metal plate, a wiring pattern can be formed by forming a conductor portion via an insulating organic insulating material portion. Further, the present invention is also effective in the case where the above-mentioned wiring substrate is a wiring substrate on which a semiconductor element is mounted. Further, as the conductor portion formed by plating, a single metal such as copper, gold, silver or the like, a conductive electrodeposited resin, or a laminate formed by laminating these conductive layers can also be manufactured.

The crimping apparatus according to the present invention is for performing the transfer method according to the present invention. Even when it is necessary to perform alignment with respect to a wiring substrate, an expensive crimping apparatus is required for one transfer operation. No time is occupied, and no bubbles are buried between the organic insulating material portion and the wiring substrate during transfer.

[0008]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The transfer method of the present invention will be described below with reference to the drawings. FIG. 1 is a sectional view showing the steps of the transfer method of the present invention, and FIG. 2 is a view for explaining a wiring board. 1 and 2, 110 is a conductive plate, 110A is a transfer plate, 120 is a negative pattern, 130 is a conductor, 140 is an organic insulating material, 150 is a wiring board, 150A is a wiring board, and 160 is pressurized. Part, 165 is a frame part, 170 is a mounting table, 180 is a vacuum evacuation and vacuum release pipe, 210 is a wiring pattern, 211 is an electrode pad for connection with a semiconductor element,
212 is an electrode pad for connection to an external circuit, 213 is a wiring portion, 215 is a wiring pattern region, 220 is a closed region creation pattern, and 225 is a closed region. According to the transfer method of the present invention, a wiring pattern having a structure in which a conductor portion 130 and an organic insulating material portion 140 are laminated in this order on a conductive plate 110 is formed, and the wiring pattern is transferred onto a wiring substrate. This is a method of forming a wiring portion of a substrate.

First, a negative pattern forming step of forming a negative pattern 120 made of a resist film on a conductive plate 110 and exposing only a predetermined region is performed. (FIG. 1A) The shape of the negative pattern 120 is shown in FIG.
It is created according to the pattern shape of 50A. The patterning method is not particularly limited, but a photolithography method in which plate making is performed using a photomask is common. As a material of the conductive plate 110, a stainless plate is generally used, and a surface subjected to sand blasting is plated with copper, but is not particularly limited to this. The conductive plate 110 only needs to have at least a surface having conductivity. In addition, a conductive metal plate such as aluminum, copper, nickel, iron, or titanium, or a glass plate, polyester, polycarbonate, A conductive thin film formed on the surface of an insulating substrate of a resin film of polyimide, polyethylene, acrylic, or the like can also be used. Further, a thin film of chromium, ceramic kanigen (manufactured by Kanigen, Ni + P + SiC) or the like may be formed on the surface of the conductive plate. The thickness of this thin film is 0.1 to 1.0.
It is preferably about μm.

Next, plating is performed on the conductive plate 110 on which the negative pattern 120 has been formed, using the negative pattern 120 as a plating mask to form a thin-film conductor portion 130. (FIG. 1B) The conductor portion 130 is formed of a single metal such as copper, gold, silver or the like, a conductive electrodeposited resin, or a laminate of these.

Next, the conductor portion 1 formed by plating
An electrodeposition step of forming an organic insulating material 140 having adhesiveness on the electrode 30 by an electrodeposition method is performed. (FIG. 1C) The organic insulating material portion 140 is formed so as to protrude more than the negative pattern 120. The organic insulating material portion 140 may be any material that has electrodeposition properties and exhibits tackiness at normal temperature or heating. For example, the polymer used may be an anionic or cationic synthetic polymer having tackiness. Molecular resins can be mentioned. As the anionic synthetic polymer resin, acrylic resin, polyester resin,
A maleated oil resin, a polybutadiene resin, an epoxy resin, a polyamide resin, a polyimide resin, or the like can be used alone or as a mixture of any combination of these resins. Further, the above-mentioned anionic synthetic resin may be used in combination with a crosslinkable resin such as a melamine resin, a phenol resin and a urethane resin. In addition, as the cationic synthetic polymer resin, an acrylic resin, an epoxy resin, a urethane resin, a polybutadiene resin, a polyamide resin, a polyimide resin, or the like can be used alone or as a mixture of any combination thereof. Further, the above cationic synthetic polymer resin and a crosslinkable resin such as a polyester resin and a urethane resin may be used in combination. Further, in order to impart tackiness to the above-mentioned polymer resin, a rosin-based, terpene-based, or petroleum-based resin for imparting tackiness can be added as necessary. The polymer resin is subjected to an electrodeposition method in a state of being neutralized by an alkaline or acidic substance and solubilized in water, or in a water-dispersed state. That is, the anionic synthetic polymer resin is trimethylamine, diethylamine,
Neutralize with amines such as dimethylethanolamine and diisopropanolamine, and inorganic alkalis such as ammonia and potassium hydroxide. The cationic synthetic polymer resin is neutralized with an acid such as acetic acid, formic acid, propionic acid, and lactic acid. Then, the polymer resin solubilized in the neutralized water is used in a state of being diluted with water as a water dispersion type or a solution type. In addition, in order to enhance the reliability of the organic insulating material portion 140 such as insulation and heat resistance, a known thermosetting resin having a thermopolymerizable unsaturated bond such as a blocked isocyanate is added to the polymer resin, and heat treatment is performed. May be cured. Of course, if a resin having a polymerizable unsaturated bond (for example, an acrylic group, a vinyl group, an allyl group, etc.) is added in addition to the thermosetting resin, the resin can be cured by electron beam irradiation. As the organic insulating material portion 140, in addition to the above, as long as it shows adhesiveness at room temperature or by heating, it is not only a thermoplastic resin but also a thermosetting resin such as an adhesive resin which loses its tackiness after being cured. But it is good.

At this stage, the conductive portion 13 shown in FIG.
0 and wiring pattern 210 composed of organic insulating material 140
And a pattern 220 for forming a closed region.
In addition, what formed the pattern which consists of the conductor part 130 and the organic insulating material part 140 on the conductive plate 110 is called the transfer plate 110A here. As shown in FIG. 2, a pattern other than the wiring pattern 210 that forms a closed loop (closed loop) is referred to as a closed area creation pattern 220, and an area surrounded by this pattern is referred to as a closed area 225. In the transfer method of the present invention, as shown in FIG.
Even if 25 is a region including the wiring pattern region 215,
As shown in FIG. 2B, the closed region 225 may not include the wiring pattern region 215, but FIG. 2A is preferable from the viewpoint of wiring and productivity.

Next, the wiring pattern forming side surface of the wiring substrate 150 is placed on the mounting table 170 of the crimping apparatus with the side facing up, and the organic insulating material portion 140 of the transfer plate is transferred to the wiring substrate 15.
On the 0 side, the transfer plate 110A and the wiring substrate 150 are opposed to each other while being separated from each other, and at least the surrounding closed area formed by the closed area forming pattern is evacuated in advance. (FIG. 1 (d)) For evacuation, for example, using a crimping device as shown in FIG.
The transfer plate 110A and the wiring substrate 150 are placed in a crimping device, and a sealed state is created. If it is necessary to align the transfer plate and the wiring substrate 150, the alignment is performed.

Next, the transfer plate 110A is evacuated while the surrounding closed region formed by the closed region forming pattern is evacuated.
Is performed on the wiring substrate 150 via the organic insulating material portion 140 by a pressure bonding step. (FIG. 1E) The wiring substrate 150 is a metal plate, ceramic,
Although various materials such as a printed board, a flexible film, and the like can be used, the material needs to withstand the transfer step of pressing, and a metal plate and a ceramic plate are particularly suitable for the transfer step. Organic insulating material section 14
As 0, a thermosetting resin that is practical from the viewpoint of workability is used, but is not necessarily limited to this.

Next, the transfer plate 110A and the wiring substrate 15
The transfer plate 110 is separated from the conductor 130 after the resin is completely cured (FIG. 1 (f)). Then, the transfer of the conductor portion 130 and the organic machine insulating material portion 140 is completed, and the wiring board 150A is obtained. (Figure 1
(G))

In the pressing step in the pressing step, the closed region 225 formed by the closed region forming pattern 220 is evacuated in advance, and then the transfer plate 110A is connected to the wiring substrate 150 via the organic insulating material portion 140. In the closed region 215, the closed region forming pattern 220, the conductive plate 110, and the wiring substrate 150 maintain a vacuum, and even if the closed region 215 is taken out of the crimping device (to the atmosphere),
The transfer plate 110A and the wiring substrate 150 are kept in close contact with each other. When the transfer plate 110 is peeled off from the conductor section 130, it is ensured that the transfer plate 110 is peeled off. For example, when a stainless steel plate is used as the base material of the transfer plate 110, sand blasting is performed on the surface of the stainless steel plate so that the copper plating portion adheres to the stainless steel plate with a certain adhesive strength when copper plating is performed. Adjust it.

Next, the wiring substrate 150A manufactured by the transfer method of the present invention will be briefly described with reference to FIG. FIG. 2A shows a wiring pattern region 215 inside a region (closed region 225) surrounded by the closed region creation pattern 220.
In this case, the entire wiring pattern area 215 is surrounded by the closed area creation pattern 220. FIG. 2 (b)
Is a region surrounded by the closed region creation pattern 122 (closed region 2
25) has a wiring pattern area 215 outside of
The entire wiring pattern area 215 is a closed area creation pattern 2
Not surrounded by 20. The wiring pattern 210 includes an electrode pad 211 for connecting to a semiconductor element, an external electrode pad 212 for connecting to an external circuit, and a wiring portion 213 connecting these. When a semiconductor device is manufactured using a metal plate as the wiring substrate 150, the surface of the metal plate may be a die pad portion on which the semiconductor device is mounted. In FIG. 2, the wiring pattern area 215 is shown as an area surrounded by a dotted line. For example, when the wiring pattern area 215 is used as a circuit board for a semiconductor device, the wiring board 150A is divided and used for each area. Sometimes.

Next, a crimping apparatus according to the present invention will be described with reference to the drawings. FIG. 3 is a schematic sectional view of the crimping device of the present invention,
FIG. 4 is a diagram for explaining the operation of the crimping device of the present invention. 3 and 4, reference numeral 300 denotes a crimping device, 310 denotes a transfer plate, 320 denotes a transfer plate holding unit, 330 denotes a wiring board, and
0 is a wiring substrate holding unit, 350 is an alignment mechanism unit,
360 is a pressurizing section, 370 is a frame section, 375 is an O-ring, 3
Reference numeral 381 denotes a vacuum / vacuum release pipe, 382 denotes a vacuum release pipe, 382 denotes a vacuum release pipe, and 382A and 383A denote control valves. The crimping device 300 of the present invention is a crimping device for performing the crimping step in the transfer method of the present invention. As shown in FIG. 3, a transfer plate holding portion 320 for holding a transfer plate 310, a wiring substrate 330 340, an alignment mechanism 350 for aligning the transfer plate 310 and the wiring substrate 330, and at least separating the transfer plate 310 and the wiring substrate 330 after alignment. A frame 370 which is an enclosure for vacuuming between the transfer plate 310 and the wiring substrate 330, a vacuum control unit 380 for performing vacuum control, and a back side of the transfer plate 310 where no pattern is provided. A pressing unit 360 for pressing the transfer plate 310 and pressing the transfer plate 310 against the wiring substrate 330;
The wiring substrate holding part 340 is disposed on the lower side, and the wiring substrate 330 is placed thereon.
A pressurizing unit 360 that can move up and down is provided on the upper side of the transfer plate 310 between the pressurizing unit 360 and the wiring substrate holding unit 340.
And the wiring substrate 330, and pressurizes the pressing portion 360 to press them together. In the apparatus 300 shown in FIG. 3, the frame 370 is supported by the pressing unit 360 and the pressing unit 3
It is provided over the entire circumference of the wire 60 and moves along the pressing portion 360 toward the wiring substrate holding portion 340.
Then, the leading end of the frame portion 370 on the side of the wiring substrate 330 moves to the side of the wiring substrate holding portion 340, and the wiring substrate holding portion 34.
A contact is made with the elastic O-ring 375 provided at the contact point 0 to form a closed space. The evacuation control unit 380 performs evacuation and release of evacuation of the space created by moving the frame 370. The evacuation is performed by opening the control valve 382A, closing the control valve 383A, and evacuating piping. 282, a vacuum is drawn through a vacuum / vacuum release pipe 381. The release of the vacuum is performed by the control valve 382.
A is closed, the control valve 383A is opened, and the vacuum release pipe 38 is opened.
3. This is performed by introducing air through a vacuum / vacuum release pipe 381. Vacuum and vacuum release piping 3
Reference numeral 81 is provided so as to communicate with the transfer plate 310 side outside the region of the wiring substrate 330 of the wiring substrate holding portion 340 and inside the region surrounded by the frame portion 370.

The operation of the crimping apparatus according to the present invention will be briefly described with reference to FIG. First, the wiring substrate holding unit 340
The wiring substrate 330 is placed on the upper side with the side on which the wiring pattern is formed facing upward. (FIG. 4A) Next, with the transfer plate 310 held by the transfer plate holding unit 320, the wiring pattern side faces the wiring substrate holding unit 340, and is placed on the wiring substrate holding unit 340 so as to face each other. Position. (FIG. 4B) In this state, the transfer plate 310 and the wiring substrate 3 are moved by the alignment mechanism 350 while moving the transfer plate 310.
The alignment with 30 is performed. Alignment can be performed by providing a mark for alignment or a mark corresponding thereto in advance on the transfer plate 310. After the alignment is completed, the alignment mechanism 350 is moved out of the area to be pressed. It moves at least outside the area surrounded by the frame 370. (FIG. 4 (c)) Thereafter, the frame 370 is moved downward along the pressing portion 360 while the transfer plate 310 and the wiring substrate 330 are kept separated, and the tip of the frame 370 adheres to the O-ring 375. So that
Space 3 in which transfer plate 310 and wiring substrate 330 are sealed.
90, the control valve 382A shown in FIG.
383A is adjusted, and vacuum is drawn through a vacuum / vacuum release pipe 381. (FIG. 4D) Then, the pressing unit 360 is gradually lowered to the lower side, and the transfer plate 31 is moved.
The entire back surface, which is not the wiring pattern side of No. 0, is pressurized and pressure-bonded to the wiring substrate 330 via the organic insulating material portion. (FIG. 4
(E)) When applying heat at the time of pressure bonding, a temperature adjusting unit (not shown) is provided. After crimping, control valves 382A, 383
A is adjusted, the vacuum is released through the vacuum / vacuum release pipe 381, and the pressing unit 360 and the frame unit 370 are moved upward (FIG. 4F).
Take this out in a state where 0 is integrated. (FIG. 4
(G)) Thereafter, only the conductor 311 of the transfer plate 310 is peeled off,
This is to obtain the wiring board 330A (FIG. 4H).

[0020]

EXAMPLES Further, the transfer method of the present invention will be described with reference to examples. In the embodiment, on a metal plate on which a semiconductor element is mounted,
This is a transfer method for producing a wiring board having an external terminal electrode pad, an electrode pad for connection with a semiconductor element, and a wiring pattern including a wiring portion connecting these, and an embodiment will be described below with reference to FIG. . FIG. 5 is a view showing a part of the wiring board manufactured by the transfer method of the embodiment. First, a surface of a stainless steel plate (SUS304MA material) having a thickness of 0.15 mm as a conductive plate is lightly polished, and then, as in the conventional method shown in FIG. Negative resist C made by company
BR-M901 (100 CPS) is formed by a spin coating method, heated and dried to form a resist layer 120, and then, using a photomask, a predetermined region is exposed to light, developed, baked, and subjected to a desired wiring. A 0.5 μm-thick negative pattern 120 was formed on the conductive plate 110 so that the conductive plate surface was exposed in the shape of the pattern. (Figure 1
(A))

Next, the conductive plate 110 on which the negative pattern 120 is formed is electrolytically plated to have a thickness of about 5.0 μm.
A conductor portion 130 made of thick copper plating was applied (FIG. 1).
(B)). The copper plating was performed under the composition and plating conditions shown in Table 1.

Next, the entirety of the conductive plate 110 on which the conductor portion 130 has been formed is washed with water and then immersed in an electrodeposition solution to form the conductive plate 11.
0 is used as an anode, a stainless steel plate of the same area is used as a cathode, and both electrodes are opposed to each other at 50 mm, and a continuous voltage is applied at 50 V for 10 minutes to further form an organic insulating material portion made of a polyamic acid thin film on the copper plating 110. 140 was electrodeposited (FIG. 1 (c)). This electrodeposition was performed under the composition and electrodeposition conditions shown in Table 2. As the electrodeposition solution, each of the solutions (a), (b) and (c) shown in Table 2 was stirred and reacted at room temperature for 12 hours, (d) was added thereto, and the mixture was further reacted for 1 hour. ). Thus, the conductor portion 1 made of copper plating on the conductive plate
30 and an organic insulating material portion 14 comprising a polyamic acid thin film
0 was formed on the transfer plate 110A.

Next, after the transfer plate 110A and the wiring substrate 150 are aligned using the crimping device of the present invention shown in FIG. 3, the transfer plate 110A and the wiring substrate 150 are kept separated from each other. Then, the transfer plate 110A is evacuated (FIG. 1 (d)), and then the transfer plate 110A is pressed by the pressurizing unit of the pressing device.
0. (FIG. 1E) The pressure bonding conditions were 1.0 kg / cm ² , 250 ° C., and 1 minute.

Next, the transfer plate 110A and the wiring substrate 15
The transfer plate 110 is separated from the conductor 130 after the resin is completely cured (FIG. 1 (f)). Then, the transfer of the conductor portion 130 and the organic machine insulating material portion 140 was completed, and a wiring board 150A was obtained. (Figure 1
(G))

FIG. 5 is a perspective view showing a part of the wiring board 150A obtained in this embodiment. Wiring board 55
Organic insulating material portion 14 comprising a polyamic acid thin film
The conductor portion 130 made of a copper plating portion is formed through the through hole 0 to form a wiring pattern. 5 in FIG.
Reference numeral 61 denotes an electrode pad for connection to a semiconductor element, 562 denotes an electrode pad for connection to an external circuit, and 563 denotes a wiring unit connecting these. Reference numeral 570 denotes a closed region forming pattern, and the wiring substrate 550A has the same pattern as in FIG.
The wiring pattern is in the closed area.

[0026]

As described above, according to the present invention, a pattern is formed on a conductive plate from a transfer plate having a structure in which a conductor portion and an organic insulating material portion are laminated in this order via the organic insulating material portion. In a method of forming a wiring portion of a wiring board by transferring the wiring onto a substrate, even if it is necessary to perform alignment on the wiring board at the time of crimping, an expensive crimping apparatus can be used for one crimping operation. Time is not occupied. In terms of quality as well, it is possible to perform transfer without bubbles being embedded between the organic insulating material portion and the wiring substrate.

[Brief description of the drawings]

FIG. 1 is a process diagram of the transfer method of the present invention.

FIG. 2 is a view for explaining a wiring substrate;

FIG. 3 is a schematic sectional view of the crimping device of the present invention.

FIG. 4 is a view for explaining the operation of the crimping device of the present invention.

FIG. 5 is a partial perspective view of a wiring substrate manufactured according to an example.

FIG. 6 is a process diagram of a conventional transfer method.

[Explanation of symbols]

110 Conductive plate 110A Transfer plate 120 Negative pattern 130 Conductor part 140 Organic insulating material part 150 Wiring substrate 150A Wiring board 160 Pressurizing part 165 Frame part 170 Mounting table 180 Vacuum evacuation / vacuum release pipe 210 Wiring pattern 211 Semiconductor element Connection electrode pad 212 for connection to an external circuit 213 wiring part 213 wiring part 215 wiring pattern area 220 closed area creation 225 closed area 300 crimping device 310 transfer plate 320 transfer plate holding part 330 wiring substrate 340 wiring substrate holding part 350 Alignment mechanism section 360 Pressurizing section 370 Frame section 375 O-ring 380 Vacuum control section 381 Vacuum / vacuum release pipe 382 Exhaust pipe 383 Control valve 390 Space 550 Wiring board 550A Wiring board 561 Electrode pad for connection with semiconductor element 56 2 Electrode pad for connection to external circuit 563 Wiring part 610 Conductive plate 610A Transfer plate 620 Resist 621 Negative pattern 611 Exposed area 630 Conductor part 640 Organic insulating material part 650 Wiring board 650A Wiring board

Claims (8)

[Claims] A wiring pattern is transferred onto a wiring substrate from a transfer plate in which a wiring pattern having a structure in which a conductor portion and an organic insulating material portion are laminated in this order on a conductive plate is transferred to a wiring portion of the wiring board. At least, in order, at least (a) a negative pattern forming step of forming a negative pattern formed of a resist film on a conductive plate so that only a predetermined region is exposed; (B) plating on the conductive plate on which the negative pattern is formed by using the negative pattern as a plating mask to form a thin-film conductor; and (c) plating on the conductor formed by plating. An electrodeposition step of forming an organic insulating material having adhesiveness by an electrodeposition method, and (d) wiring a transfer plate comprising a conductive plate, a conductor portion formed on the conductive plate, and the organic insulating material portion by wiring. Organic insulating material part for substrate Forming a ring-closed region on the wiring board, which is made up of a conductor portion and an organic insulating material portion, in addition to a wiring pattern made of a conductor portion and an organic insulating material portion. A pattern for forming a closed region is formed in a region other than a wiring pattern region. When performing pressure bonding in the pressing process, a closed region formed by the closed region forming pattern is evacuated in advance, and then the transfer plate is subjected to organic insulation. A transfer method, wherein the transfer method is pressure-bonded to a wiring substrate via a material portion. 2. The transfer method according to claim 1, wherein the closed area is an area including a wiring pattern area. 3. The transfer method according to claim 1, wherein the wiring substrate according to claim 1 is a metal plate. 4. The transfer method according to claim 1, wherein the wiring substrate according to claim 1 is a wiring substrate on which a semiconductor element is mounted. 5. A conductor part formed by plating according to claim 1 to 4, which is made of a single metal such as copper, gold, silver or the like, or a conductive electrodeposited resin, or a laminate of these. A transfer method characterized by the above-mentioned. 6. A pattern formed by sequentially laminating a conductor portion and an organic insulating material portion. In addition to a wiring pattern, a closed region forming pattern for forming a closed region by ring closure is formed in a region other than the wiring pattern region. A press plate for pressing a transfer plate provided on one surface thereof onto a wiring substrate via an organic insulating material portion of the pattern, the transfer plate holding portion holding the transfer plate; With the wiring board holding part for holding the board, the transfer plate and the wiring board separated,
At least a frame portion which is an enclosure for vacuuming between the transfer plate and the wiring substrate, a vacuum control portion for performing vacuum control, and pressing the transfer plate from the back side where the pattern of the transfer plate is not provided. And a pressurizing portion for press-bonding to the wiring substrate. The transfer plate and the wiring substrate are sandwiched between the pressurizing portion and the wiring-substrate holding portion via the organic insulating material portion. And a pressure bonding device for transfer. 7. The wiring substrate holding portion according to claim 6, wherein the wiring substrate holding portion is located on a lower side and the wiring substrate is mounted thereon.
A pressurizing section that can move up and down is provided above the wiring board holding section, and the frame section is supported by the pressurizing section and moves to the wiring board holding section side. The substrate side tip is brought into close contact with an elastic O-ring so as to be in contact therewith, and the evacuation control unit is surrounded by a frame outside the wiring substrate region of the wiring substrate holding unit. Wherein the vacuum is evacuated via a vacuum and vacuum release pipe provided on the transfer plate side inside the area to be pressed. 8. An apparatus according to claim 6, further comprising an alignment mechanism for aligning the transfer plate and the wiring substrate, and after positioning the transfer plate and the wiring substrate, evacuating and crimping. A pressure bonding device for transfer, characterized in that: