JPH10172766A - Organic electroluminscent element and manufacture thereof - Google Patents

Organic electroluminscent element and manufacture thereof

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Publication number
JPH10172766A
JPH10172766A JP8337672A JP33767296A JPH10172766A JP H10172766 A JPH10172766 A JP H10172766A JP 8337672 A JP8337672 A JP 8337672A JP 33767296 A JP33767296 A JP 33767296A JP H10172766 A JPH10172766 A JP H10172766A
Authority
JP
Japan
Prior art keywords
film
light
thin film
organic
light emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8337672A
Other languages
Japanese (ja)
Other versions
JP3552435B2 (en
Inventor
Takahiro Nakayama
隆博 中山
Shinya Kobayashi
信也 小林
Akira Shimada
島田  昭
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP33767296A priority Critical patent/JP3552435B2/en
Priority to CA002223167A priority patent/CA2223167C/en
Priority to US08/984,041 priority patent/US6133691A/en
Priority to EP97121325.1A priority patent/EP0847094B1/en
Publication of JPH10172766A publication Critical patent/JPH10172766A/en
Priority to US09/548,681 priority patent/US6563261B1/en
Priority to US10/397,181 priority patent/US6787991B2/en
Application granted granted Critical
Publication of JP3552435B2 publication Critical patent/JP3552435B2/en
Priority to US10/933,254 priority patent/US6909232B2/en
Priority to US11/152,254 priority patent/US7084566B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Abstract

PROBLEM TO BE SOLVED: To provide an organic electroluminescent(EL) element which can effectively utilize the light advancing in the parallel direction of an organic thin film by forming an end surface of the organic thin film in the shape of having a light reflecting function in the organic EL element formed by laminating the organic thin film on a base board. SOLUTION: A semitransparent film 102 such as a titanium oxide or a silicon oxide is formed on a base board 101 formed of glass or the like, and a transparent electrode 103, a hole transport layer 104, a light emitting layer 105 and a back metallic plate 106 are laminated on it, and an organic EL element is formed. An end surface of this organic thin film is made to function as a semitransparent reflecting mirror by a difference in a refractive index with an external part, and is formed in the shape of reflecting the light on the inside. That is, a conventional film thickness changing area is shortened as much as possible, and the light is shut in, and attenuation and extinction of the light are reduced. It is ideally better that the end surface of the organic thin film is a right angle to the base board, but actually, when a right-angled part of about 40 to 90% exists in a thickness of the film, reflection of the light (shutting-in of the light) can be sufficiently obtained.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は有機発光素子に係
り、特に表示光源,光回路構成素子,光スイッチ,光ア
レイ,通信素子,光記録用ヘッド等を用いた光関連製品
に用いられる有機発光素子に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic light-emitting device, and more particularly to an organic light-emitting device used for an optical-related product using a display light source, an optical circuit component, an optical switch, an optical array, a communication device, an optical recording head, and the like. It relates to an element.

【0002】[0002]

【従来の技術】従来の微小共振器構造を有する有機電界
発光素子は「微小共振器構造を利用した有機発光素子に
よる多色発光素子の検討」:中山,角田,長江:電子情
報通信学会志、J77−C−II,437(1994)の
ように、2平面の反射鏡の間に有機発光薄膜を挟んだ共
振器構造であった。
2. Description of the Related Art A conventional organic electroluminescent device having a micro-resonator structure is called "Study of a multicolor light-emitting device using an organic light-emitting device using a micro-resonator structure": Nakayama, Kakuta, Nagae: IEICE Journal, As in J77-C-II, 437 (1994), a resonator structure in which an organic light emitting thin film was sandwiched between two plane reflecting mirrors.

【0003】[0003]

【発明が解決しようとする課題】従来の微小共振器構造
を有する有機電界発光素子では、膜面平行方向に進む光
を閉じ込める構造はなく、その光は活用されずに損失と
なっていた。この点においては、共振器構造を持たない
通常型の有機電界発光素子においても同様である。
In a conventional organic electroluminescent device having a microresonator structure, there is no structure for confining light traveling in a direction parallel to the film surface, and the light is not utilized and is lost. In this regard, the same applies to a normal type organic electroluminescent device having no resonator structure.

【0004】ここで、従来の有機発光素子において膜面
平向方向に進む光が減衰する理由を説明する。
Here, the reason why light traveling in the direction parallel to the film surface in the conventional organic light emitting device is attenuated will be described.

【0005】まず、図11において有機発光素子を製作
する場合の方法を説明する。
First, a method for manufacturing an organic light emitting device will be described with reference to FIG.

【0006】参照番号Aは有機発光素子の基板で、この
基板Aに有機原料によって膜Bを蒸着する。この場合メ
タルマスクCによってマスクされるものでこれは蒸着源
Dによるマスク領域を決めるものである。
Reference numeral A denotes a substrate of an organic light emitting device, and a film B is deposited on the substrate A by using an organic material. In this case, the mask area is masked by the metal mask C, which determines the mask area by the evaporation source D.

【0007】このような装置において、基板Aの凹凸や
マスクのそり,マスク端部のまるみ等のため、膜成長面
とマスクエッジとの間には実際には光学顕微鏡で観察可
能な程度の隙間が生じている。仮りに隙間を0.1mm=
100μm とすると、その位置から蒸着源を見た時、
2°の視角に見えたとすると、 100μm×tan(2°)=3.5μm の膜厚変化長さが発生する。
In such an apparatus, the gap between the film growth surface and the mask edge is practically observable with an optical microscope due to the unevenness of the substrate A, the warpage of the mask, the roundness of the mask edge, and the like. Has occurred. If the gap is 0.1mm =
When the deposition source is viewed from that position,
Assuming a visual angle of 2 °, a film thickness change length of 100 μm × tan (2 °) = 3.5 μm occurs.

【0008】すなわち、膜が100%成長している部分
と膜が0%の部分との間には3.5μmに亘る膜厚変化
領域ができることになる。
That is, between the portion where the film grows 100% and the portion where the film grows 0%, a film thickness change region of 3.5 μm is formed.

【0009】通常有機発光素子等の有機薄膜の厚さは
0.1μm の程度であるので、この膜厚が変化する領域
は厚さと横の長さの比率でみると1:35となる。
Usually, the thickness of an organic thin film such as an organic light-emitting device is about 0.1 μm, and the area where the film thickness changes is 1:35 in terms of the ratio of the thickness to the lateral length.

【0010】したがって、マスク蒸着で膜を形成した場
合に形成される膜のエッジは、 arctan(1/35)=1.6° の角度をとることになる。
Therefore, the edge of the film formed when the film is formed by mask evaporation has an angle of arctan (1/35) = 1.6 °.

【0011】そしてこのようなエッジに対して入り込ん
だ光は図12にあるように反射して戻されることなく進
行して減衰,消滅するものである。
Light entering such an edge proceeds without being reflected and returned as shown in FIG. 12, and attenuates and disappears.

【0012】本発明の目的はこれらの有機発光素子で活
用されずに損失となっていた有機薄膜の平行方向に進む
光を有効に活用する素子を得ることにある。
An object of the present invention is to provide an element which effectively utilizes light traveling in a parallel direction of an organic thin film which has not been utilized in these organic light emitting elements and has been lost.

【0013】[0013]

【課題を解決するための手段】本発明の特徴は、基板の
うえに有機薄膜を形成した有機発光素子において、前記
有機薄膜の端面を光を反射する光反射機能を有する端面
としたものである。
A feature of the present invention is that, in an organic light emitting device having an organic thin film formed on a substrate, an end surface of the organic thin film has an end surface having a light reflecting function of reflecting light. .

【0014】[0014]

【発明の実施の形態】以下図面に基づき本発明の一実施
例を詳細に説明する。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below in detail with reference to the drawings.

【0015】図1は、微小共振器構造を有する有機電界
発光素子に、本発明を適用した時の素子である。素子周
辺部除去による膜端面形成は、透明電極膜の途中まで行
っている。素子構造は発光層,ホール輸送層を積層し
た、p/nの、2積層型EL素子を用いて示している
が、有機層の機能分担や機能併合により、1層や3層以
上の積層構造の有機電界発光素子が報告されており、い
ずれの構造も用いることができる。
FIG. 1 shows a device in which the present invention is applied to an organic electroluminescent device having a microresonator structure. The formation of the film end surface by removing the peripheral portion of the device is performed halfway through the transparent electrode film. Although the device structure is shown using a p / n, two-layer EL device in which a light emitting layer and a hole transport layer are stacked, a stacked structure of one layer or three or more layers due to function sharing or combination of functions of the organic layer. Are reported, and any structure can be used.

【0016】見体的には、ガラスで形成された基板10
1の上に酸化チタンあるいは酸化シリコン等よりなる半
透明膜102を形成し、更にそのうえに透明電極10
3,ホール輸送層104,発光層105及び背面金属電
極106を積層している。これらの具体的な材料等につ
いては本発明者等が発表した前述した「電子情報通信学
会誌,J77−C−II,437(1994)」等を用い
ることができるし、またこれ以外の適当な材料もまた当
然用いることもできる。
[0016] The substrate 10 is made of glass.
1, a semi-transparent film 102 made of titanium oxide or silicon oxide is formed, and a transparent electrode 10 is further formed thereon.
3, a hole transport layer 104, a light emitting layer 105, and a back metal electrode 106 are laminated. For these specific materials and the like, the above-mentioned “Journal of the Institute of Electronics, Information and Communication Engineers, J77-C-II, 437 (1994)” and the like, and other suitable materials can be used. Materials can of course also be used.

【0017】そして、本発明の特徴はこの図1から理解
できるように有機薄膜の端面を外部との屈折率の差によ
って反透明反射鏡として機能させ光が内部で反射するよ
うな形状としたものである。つまり従来の膜厚変化領域
を可及的に短かくし、光を閉じ込めて光の減衰,消滅を
少なくするものである。
The feature of the present invention is that, as can be understood from FIG. 1, the end face of the organic thin film is formed to function as an anti-transparent reflecting mirror by a difference in the refractive index from the outside, so that light is reflected inside. It is. In other words, the conventional film thickness change region is made as short as possible, and light is confined to reduce light attenuation and disappearance.

【0018】参考までに図2は発光層,ホール輸送層の
例として、アルミキレート(ALQ),トリフェニルジア
ミン(TAD)を示した。図3は酸化チタン(54nm
厚)と酸化シリコン(86nm厚)の薄膜を合計で6層
積層した、誘電体半透明反射膜の透過特性を示す。40
0nmより長波長の領域では、透過光以外の殆どは反射
される。
For reference, FIG. 2 shows aluminum chelate (ALQ) and triphenyldiamine (TAD) as examples of the light emitting layer and the hole transport layer. FIG. 3 shows titanium oxide (54 nm).
9 shows transmission characteristics of a dielectric semi-transparent reflective film in which a total of six thin films of silicon oxide (thickness) and silicon oxide (86 nm thick) are laminated. 40
In a region having a wavelength longer than 0 nm, most of the light other than the transmitted light is reflected.

【0019】次に素子の作製は、切削とドライエッチン
グを組み合わせた手法で実現することができる。切削
は、背面金属電極まで形成した電界発光素子に対し、ガ
ラス等の鋭利な先端を面に沿うように走らせることで可
能である。図4にその模式図を示す。この切削後の素子
の電顕写真を図5に示す。この素子を、表1に示した条
件でドライエッチングを行い作製した素子の電顕写真を
図6に示す。これからわかるように、膜横部に有機薄膜
を除去した端面を形成できていることがわかる。
Next, the fabrication of the element can be realized by a method combining cutting and dry etching. Cutting can be performed by running a sharp tip made of glass or the like along the surface of the electroluminescent element formed up to the back metal electrode. FIG. 4 shows a schematic diagram thereof. FIG. 5 shows an electron micrograph of the element after the cutting. FIG. 6 shows an electron micrograph of the device produced by subjecting the device to dry etching under the conditions shown in Table 1. As can be seen from this, it can be seen that an end face from which the organic thin film has been removed can be formed at the lateral portion of the film.

【0020】[0020]

【表1】 尚、図5,図6に示す記号はそれぞれQuartzがガラス基
板101、ITOが透明電極103、TADがホール輸
送層104、ALQが発光層105及びAL:LI10
6が背面金属電極である。
[Table 1] The symbols shown in FIGS. 5 and 6 are, respectively, the glass substrate 101 for Quartz, the transparent electrode 103 for ITO, the hole transport layer 104 for TAD, the light emitting layer 105 for ALQ, and AL: LI10
6 is a back metal electrode.

【0021】そして、この作成方法の長所は、レジスト
などの薬品を膜上に使用せずに加工できることにある。
有機電界発光素子は、十分な性能を発揮させるには有機
薄膜部分を高純度に維持することが重要であり、不純物
の僅かな混入により極端な性能劣化を示す。有機薄膜の
膜厚は100nm程度であり体積的にも極めて小さいた
め、総量的にはごく僅かの、レジストなどからの不純物
拡散混入も、性能を大きく劣化させる。本作成方法はこ
の問題点を解決する。また、作製コストに関しても、作
製パターンに応じた専用の切削装置を使用することによ
り、レジストを使用する加工プロセスより低減できる可
能性がある。
An advantage of this manufacturing method is that processing can be performed without using a chemical such as a resist on the film.
It is important for an organic electroluminescent element to maintain an organic thin film portion with high purity in order to exhibit sufficient performance, and extremely small deterioration of performance is caused by a small amount of impurities. Since the organic thin film has a thickness of about 100 nm and is extremely small in volume, even a very small amount of impurities diffused in from a resist or the like greatly deteriorates the performance. This creation method solves this problem. In addition, the production cost may be reduced by using a dedicated cutting device corresponding to the production pattern as compared with a processing process using a resist.

【0022】加工の微細化の精度に関しては、切削時
に、刃または基板を動かす精度で決まる。STMやSE
M等に用いられている、ステージ位置の精密制御技術を
適用することにより、ミクロンオーダー或いはそれより
微細な加工の精度まで実現できる。
The precision of the fine processing is determined by the precision of moving the blade or the substrate during cutting. STM and SE
By applying the precision control technology of the stage position used for the M and the like, it is possible to realize a processing accuracy of micron order or finer.

【0023】尚、有機薄膜の端面は理想的には基板に対
して直角が良いわけであるが、実際には膜の厚さの内4
0〜90%程度の直角部があれば充分光の反射(いいか
えれば光の閉じ込め)を得ることができるものである。
The end face of the organic thin film ideally has a right angle to the substrate, but in practice, four out of four
If there is a right angle portion of about 0 to 90%, sufficient light reflection (in other words, light confinement) can be obtained.

【0024】図7はエッチングの深さの異なる素子構造
の断面図を示しており、図7(a)は有機薄膜104ま
でエッチングした素子、図7(b)はITOまでエッチ
ングした素子、図7(c)は半透明反射膜までエッチン
グした素子である。尚、どこまで加工した素子を用いる
かは、作製コストと側面反射の効果を考慮し、用途ごと
に最適化をすることになる。深くエッチングをするため
には、背面金属電極の膜厚を厚くする、エッチング速度
の遅い物質を電極に用いる、エッチング速度の遅い物質
を電極上に積層して同時に切削する、などの必要が生じ
る。
FIGS. 7A and 7B are cross-sectional views of element structures having different etching depths. FIG. 7A shows an element etched to the organic thin film 104, FIG. 7B shows an element etched to ITO, and FIG. (C) is an element etched to the translucent reflection film. The extent to which the processed element is used is optimized for each application in consideration of the production cost and the effect of side reflection. In order to perform deep etching, it is necessary to increase the film thickness of the back metal electrode, use a material with a low etching rate for the electrode, or stack a material with a low etching rate on the electrode and cut it at the same time.

【0025】また、図8に示したように、絶縁膜107
を形成した上に金属などの反射膜108を形成すること
により、側面反射の効果を上げることができる。
Further, as shown in FIG.
By forming a reflective film 108 of metal or the like on top of this, the effect of side reflection can be improved.

【0026】次に図9(a)は側面加工により3次元閉
じ込め構造とした素子、及び図9(b)に2次元閉じ込
め構造とした素子の模式図を示す。このように、発光す
る領域を閉じ込めることにより素子内部に光共振器を構
成し、閉じ込めや共振による古典的,量子的効果(遷移
確率の構造による修正など)を利用した素子を実現する
ことができる。また、当然ながら、素子の面積を微小化
するほど端面の寄与は相対的に大きくなるため、本特許
の効果も大きく現れるようになる。
Next, FIG. 9A is a schematic view of an element having a three-dimensional confinement structure by side processing, and FIG. 9B is a schematic view of an element having a two-dimensional confinement structure. As described above, an optical resonator is formed inside the element by confining the light emitting region, and an element utilizing classical and quantum effects (such as modification of the transition probability structure) due to confinement and resonance can be realized. . In addition, as a matter of course, as the area of the element becomes smaller, the contribution of the end face becomes relatively larger, so that the effect of the present invention also appears more.

【0027】ここで図7,図8,図9(a)でエッチン
グされた各素子の間の間隔は発光波長λの1/4より広
くすることが必要である。
Here, it is necessary that the interval between the elements etched in FIGS. 7, 8 and 9A is wider than 1 / of the emission wavelength λ.

【0028】すなわち、相互の素子から漏れ出る光は波
長の1/4の範囲まで到達し、この各素子の間隔が1/
4より狭いと一方の光が他方の素子へ干渉するようにな
るからである。
That is, the light leaking from the mutual elements reaches a range of 1/4 of the wavelength, and the interval between these elements is 1 /
If it is smaller than 4, one light will interfere with the other element.

【0029】図10(a)は3次元閉じ込め構造を有す
る有機電界発光素子を用いた発光パネルである。この場
合図1に示したものと同一の画素を用いている。101
及び101Aはガラス基板、102は酸化チタンと酸化
シリコンを6積層した半透明反射膜、103は透明電極
ITO(厚さ200nm)、104はホール輸送層TA
D(厚さ50nm)、105は発光層ALQ(厚さ50
nm)、106は背面金属電極Al:Li合金(厚さ2
00nm)である。また、101と101Aの2枚の基
板は接着剤302で接着して素子は封止されている。基
板101,101Aの間の空隙301には、乾燥した窒
素ガスを封入する。
FIG. 10A shows a light emitting panel using an organic electroluminescent device having a three-dimensional confinement structure. In this case, the same pixels as those shown in FIG. 1 are used. 101
101A is a glass substrate, 102 is a translucent reflective film formed by stacking six titanium oxides and silicon oxides, 103 is a transparent electrode ITO (200 nm thick), 104 is a hole transport layer TA
D (thickness 50 nm), 105 is a light emitting layer ALQ (thickness 50 nm).
nm), 106 is a back metal electrode Al: Li alloy (thickness 2)
00 nm). Further, the two substrates 101 and 101A are bonded with an adhesive 302 to seal the element. Dried nitrogen gas is sealed in the gap 301 between the substrates 101 and 101A.

【0030】図10(b)に示したように、前面透明電
極103と、背面金属電極303とによってマトリクス
状の配線とし、発光する部分を選択する。図10(c)
に示したように、Inなどの柔らかい金属を突起状に作
製した突起304を303上に作製し、それによって、
前面透明電極106と背面金属電極303との間で圧着
を行う。そのとき、画素以外の場所で303と103が
接触しないようにする絶縁部305が必要である。
As shown in FIG. 10B, the front transparent electrode 103 and the rear metal electrode 303 form a matrix wiring, and a light emitting portion is selected. FIG. 10 (c)
As shown in, a projection 304 made of a soft metal such as In in the form of a projection is formed on 303, and
Pressure bonding is performed between the front transparent electrode 106 and the rear metal electrode 303. At that time, an insulating section 305 is required to prevent 303 and 103 from coming into contact with each other except at the pixel.

【0031】303と103がクロスした部分に配置す
る、3次元閉じ込め構造を有する有機電界発光素子の数
は、クロスした部分1つあたり一個である必要はなく、
2個以上の任意の数にすることもできる。図10(c)
の実施例では、2個配置している。
The number of organic electroluminescent elements having a three-dimensional confinement structure, which are arranged at the portions where 303 and 103 cross, does not need to be one per crossed portion.
Any number of two or more can be used. FIG. 10 (c)
In this embodiment, two are arranged.

【0032】[0032]

【発明の効果】本発明によれば膜端面の、一定の割合の
光を膜内部に戻す作用によって損失を低減させ、膜前面
に出る有効な光の総量を増大させ、発光素子の入力エネ
ルギー当たりの出力発光量を向上させる効果がある。あ
るいは、この膜内部に光を戻す効果により、発光する領
域を閉じ込めて素子内部に光共振器を構成し、閉じ込め
や共振による古典的,量子的効果(遷移確率の構造によ
る修正など)を利用した素子を実現することも可能にな
る。
According to the present invention, the loss of light is reduced by the action of returning a certain percentage of light to the inside of the film at the end face of the film, the total amount of effective light emitted to the front surface of the film is increased, and the energy per input energy of the light emitting element is reduced. This has the effect of improving the output light emission amount of. Alternatively, an optical resonator is formed inside the device by confining the light emitting region by the effect of returning light into the film, and classical and quantum effects due to confinement and resonance (such as modification of the transition probability structure) are used. An element can also be realized.

【図面の簡単な説明】[Brief description of the drawings]

【図1】微小共振器構造を有する有機電界発光素子に、
膜端面加工を行った素子の断面図である。
FIG. 1 shows an organic electroluminescent device having a microresonator structure,
It is sectional drawing of the element which performed the film end surface processing.

【図2】図1に示す有機薄膜材料の組成図である。FIG. 2 is a composition diagram of the organic thin film material shown in FIG.

【図3】素子に用いた半透明反射層の透過特性例。FIG. 3 is an example of transmission characteristics of a translucent reflective layer used for an element.

【図4】切削加工の概念図である。FIG. 4 is a conceptual diagram of a cutting process.

【図5】有機発光素子の劈開したものの切削後のSEM
像である。
FIG. 5 is an SEM of a cleaved organic light emitting device after cutting.
It is a statue.

【図6】ドライエッチング後のSEM像である。FIG. 6 is an SEM image after dry etching.

【図7】エッチングの深さの異なる素子構造の断面図
で、それぞれ、(a)は有機薄膜までエッチングした素
子、(b)はITOまでエッチングした素子、(c)は
半透明反射膜までエッチングした素子である。
FIGS. 7A and 7B are cross-sectional views of element structures having different etching depths. FIG. 7A shows an element etched to an organic thin film, FIG. 7B shows an element etched to an ITO, and FIG. It is a device which did.

【図8】絶縁膜を形成した上に金属などの反射膜を形成
することにより、側面反射の効果を上げた素子の断面図
である。
FIG. 8 is a cross-sectional view of an element in which a reflective film made of metal or the like is formed on an insulating film to improve the effect of side reflection.

【図9】(a)は3次元閉じ込め構造の素子、(b)は
2次元閉じ込め構造の素子の構造を示す図である。
9A is a diagram showing the structure of an element having a three-dimensional confinement structure, and FIG. 9B is a diagram showing the structure of an element having a two-dimensional confinement structure.

【図10】本発明の応用例を示す図であり、(a)はそ
の断面構造図、(b)はマトリクス電極の構造、(c)
は斜めから俯瞰した図である。
10A and 10B are diagrams showing application examples of the present invention, in which FIG. 10A is a cross-sectional structure diagram, FIG. 10B is a structure of a matrix electrode, and FIG.
Is a view looking down from an angle.

【図11】有機薄膜を形成する装置の構成図である。FIG. 11 is a configuration diagram of an apparatus for forming an organic thin film.

【図12】従来の有機薄膜の拡大断面図である。FIG. 12 is an enlarged sectional view of a conventional organic thin film.

Claims (12)

【特許請求の範囲】[Claims] 【請求項1】基板のうえに有機薄膜を形成した有機発光
素子において、前記有機薄膜の端面を光を反射する光反
射機能を有する端面としたことを特徴とする有機発光素
子。
1. An organic light emitting device having an organic thin film formed on a substrate, wherein an end surface of the organic thin film has an end surface having a light reflecting function of reflecting light.
【請求項2】基板のうえに有機薄膜を形成した有機発光
素子において、前記有機薄膜の端面で前記有機薄膜内の
光が外部との屈折率の差によって閉じ込められるように
したことを特徴とする有機発光素子。
2. An organic light-emitting device having an organic thin film formed on a substrate, wherein light in the organic thin film is confined at an end face of the organic thin film by a difference in refractive index from the outside. Organic light emitting device.
【請求項3】基板のうえに有機薄膜を形成した有機発光
素子において、前記有機薄膜の端面が前記基板面に対し
て少なくとも50〜90%程度に亘ってほぼ直角の関係
を有していることを特徴とする有機発光素子。
3. An organic light-emitting device in which an organic thin film is formed on a substrate, wherein an end surface of the organic thin film has a substantially right angle with the substrate surface for at least about 50 to 90%. An organic light-emitting device comprising:
【請求項4】基板のうえに透明膜,透明電極,ホール輸
送層,発光層および金属電極を積層した有機発光素子に
おいて、少なくとも前記金属電極、前記発光層及びホー
ル輸送層までの端面が前記基板面に対して少なくとも5
0〜90%程度に亘ってほぼ直角の関係を有しているこ
とを特徴とする有機発光素子。
4. An organic light emitting device having a transparent film, a transparent electrode, a hole transport layer, a light emitting layer, and a metal electrode laminated on a substrate, wherein at least an end face to the metal electrode, the light emitting layer, and the hole transport layer is the substrate. At least 5 for the face
An organic light-emitting device having a substantially right-angle relationship over about 0 to 90%.
【請求項5】基板のうえに透明膜,透明電極,ホール輸
送層,発光層および金属電極を積層した有機発光素子に
おいて、少なくとも前記ホール輸送層,前記発光層およ
び金属電極とを個別に分離して構成すると共に互いにと
なり合う間隔を発光波長の1/4以上にしたことを特徴
とする有機発光素子。基板のうえに有機薄膜を形成した
有機発光素子において、前記有機薄膜の端面を光を反射
する光反射機能を有する端面としたことを特徴とする有
機発光素子。
5. An organic light emitting device having a transparent film, a transparent electrode, a hole transport layer, a light emitting layer, and a metal electrode laminated on a substrate, wherein at least the hole transport layer, the light emitting layer, and the metal electrode are individually separated. An organic light-emitting device comprising: an organic light-emitting device; An organic light-emitting device having an organic thin film formed on a substrate, wherein an end surface of the organic thin film has an end surface having a light reflecting function of reflecting light.
【請求項6】有機発光膜の発光前面の膜面側に誘電体積
層膜或いは半透明金属膜からなる半透明の反射鏡を形成
し、この反射鏡と上部電極の間で膜面垂直方向に光共振
器を構成すると共に、前記有機薄膜の端面を光を反射す
る光反射機能を有する端面としたことを特徴とする有機
発光素子。
6. A translucent reflecting mirror made of a dielectric laminated film or a translucent metal film is formed on the film surface side of the light emitting front surface of the organic light emitting film, and a vertical direction of the film surface is provided between the reflecting mirror and the upper electrode. An organic light emitting device, comprising an optical resonator, wherein an end face of the organic thin film has an end face having a light reflecting function of reflecting light.
【請求項7】有機発光膜の発光前面の膜面側に誘電体積
層膜或いは半透明金属膜からなる半透明の反射鏡を形成
し、この反射鏡と上部電極の間で膜面垂直方向に光共振
器を構成すると共に、前記有機薄膜の端面で前記有機薄
膜内の光が外部との屈折率の差によって閉じ込められる
ようにしたことを特徴とする有機発光素子。
7. A translucent reflecting mirror made of a dielectric laminated film or a translucent metal film is formed on the film surface side of the light emitting front surface of the organic light emitting film, and a vertical direction of the film surface is provided between the reflecting mirror and the upper electrode. An organic light emitting device, comprising an optical resonator, wherein light in the organic thin film is confined at an end face of the organic thin film by a difference in refractive index from the outside.
【請求項8】有機発光膜の発光前面の膜面側に誘電体積
層膜或いは半透明金属膜からなる半透明の反射鏡を形成
し、この反射鏡と上部電極の間で膜面垂直方向に光共振
器を構成すると共に、前記有機薄膜の端面が前記基板面
に対して少なくとも50〜90%程度に亘ってほぼ直角
の関係を有していることを特徴とする有機発光素子。
8. A translucent reflecting mirror formed of a dielectric laminated film or a translucent metal film is formed on the film surface side of the light emitting front surface of the organic light emitting film, and a vertical direction of the film surface is provided between the reflecting mirror and the upper electrode. An organic light-emitting device, comprising an optical resonator, wherein an end face of the organic thin film has a substantially right-angled relationship with the substrate surface for at least about 50 to 90%.
【請求項9】基板のうえに半透明の反射膜,ホール輸送
層,発光層および金属電極を積層し、前記反射膜と前記
金属電極の間で膜面垂直方向に光共振器を構成すると共
に、少なくとも前記金属電極、前記発光層及びホール輸
送層までの端面が前記基板面に対して少なくとも50〜
90%程度に亘ってほぼ直角の関係を有していることを
特徴とする有機発光素子。
9. A translucent reflective film, a hole transport layer, a light emitting layer, and a metal electrode are laminated on a substrate, and an optical resonator is formed between the reflective film and the metal electrode in a direction perpendicular to the film surface. , At least an end surface up to the metal electrode, the light emitting layer and the hole transport layer is at least 50 to the substrate surface.
An organic light-emitting device having a substantially right angle relationship over about 90%.
【請求項10】基板のうえに半透明の反射膜,ホール輸
送層,発光層および金属電極を積層し、前記反射膜と前
記金属電極の間で膜面垂直方向に光共振器を構成すると
共に、少なくとも前記ホール輸送層,前記発光層および
金属電極とを個別に分離して構成すると共に互いにとな
り合う間隔を発光波長の1/4以上にしたことを特徴と
する有機発光素子。
10. A translucent reflective film, a hole transport layer, a light emitting layer, and a metal electrode are laminated on a substrate, and an optical resonator is formed between the reflective film and the metal electrode in a direction perpendicular to the film surface. An organic light-emitting device, wherein at least the hole transport layer, the light-emitting layer, and the metal electrode are separately formed, and an interval between each other is set to 1 / or more of a light emission wavelength.
【請求項11】基板のうえに有機薄膜を形成した有機発
光素子において、前記有機薄膜のうえに金属薄膜を形成
し、前記金属薄膜を機械的あるいは物理的に取り除いて
必要な形状のマスクとして形成し、その後ドライエッチ
ング処理によって有機発光素子を得ることを特徴とする
有機発光素子の作成方法。
11. An organic light-emitting device having an organic thin film formed on a substrate, wherein a metal thin film is formed on the organic thin film, and the metal thin film is mechanically or physically removed to form a mask having a required shape. And then obtaining an organic light emitting device by dry etching.
【請求項12】請求項11において、残された金属薄膜
を金属電極として使用することを特徴とする有機発光素
子の作成方法。
12. The method according to claim 11, wherein the remaining metal thin film is used as a metal electrode.
JP33767296A 1996-04-12 1996-12-04 Organic light emitting device and method for producing the same Expired - Fee Related JP3552435B2 (en)

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JP33767296A JP3552435B2 (en) 1996-12-04 1996-12-04 Organic light emitting device and method for producing the same
CA002223167A CA2223167C (en) 1996-12-04 1997-12-02 Organic light emitting element and producing method thereof
US08/984,041 US6133691A (en) 1996-04-12 1997-12-03 Organic light emitting element with resonant structure
EP97121325.1A EP0847094B1 (en) 1996-12-04 1997-12-04 Organic light emitting element and producing method thereof
US09/548,681 US6563261B1 (en) 1996-12-04 2000-04-13 Organic light emitting element and method of producing the same
US10/397,181 US6787991B2 (en) 1996-12-04 2003-03-27 Organic light emitting element and method of producing the same
US10/933,254 US6909232B2 (en) 1996-12-04 2004-09-03 Organic light emitting element and method of producing the same
US11/152,254 US7084566B2 (en) 1996-12-04 2005-06-15 Organic light emitting element with insulation film and metal reflection film

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