JPH10158837A - Substrate transporting device for inline sputtering system - Google Patents

Substrate transporting device for inline sputtering system

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Publication number
JPH10158837A
JPH10158837A JP32622496A JP32622496A JPH10158837A JP H10158837 A JPH10158837 A JP H10158837A JP 32622496 A JP32622496 A JP 32622496A JP 32622496 A JP32622496 A JP 32622496A JP H10158837 A JPH10158837 A JP H10158837A
Authority
JP
Japan
Prior art keywords
transporting
substrate
contact
insulator
back plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP32622496A
Other languages
Japanese (ja)
Inventor
Tatsuo Imada
龍夫 今田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP32622496A priority Critical patent/JPH10158837A/en
Publication of JPH10158837A publication Critical patent/JPH10158837A/en
Pending legal-status Critical Current

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  • Liquid Crystal (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

PROBLEM TO BE SOLVED: To improve yield and productivity for a film forming process by eliminating abnormal discharge traces induced by movement of charges by contact of substrate transporting devices with each other with an inline sputtering system. SOLUTION: The transporting trucks 1 on which substrates 2 are set are passed one after another into a plasma discharge region 12. The transporting truces 1 are provided with insulators 4 projected in contact with the adjacent transporting trucks 1 in proximity to each other at least either before or after the transporting direction A. Even if the adjacent transporting trucks 1 in proximity to each other come into contact with each other, the insulators 4 disposed on the back plates 5 of the transporting trucks 1 existing on the front side are interposed between the transporting tricks 1 existing in the discharge region 12 and the transporting trucks 1 existing on the front side of the transporting direction in contact with each other and the transfer of the charges does not arise between both.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、真空成膜装置に用
いられる基板搬送装置に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate transfer device used for a vacuum film forming apparatus.

【0002】[0002]

【従来の技術】液晶表示器の画素電極の形成には、イン
ラインスパッタ装置が使用されている。まず、インライ
ンスパッタ装置で基板の全面に膜を形成し、次のフォト
リソ工程で前記基板に所定のパターニングを施して画素
電極を作る方法がとられている。
2. Description of the Related Art An in-line sputtering apparatus is used for forming a pixel electrode of a liquid crystal display. First, a method is used in which a film is formed on the entire surface of a substrate by an inline sputtering apparatus, and a predetermined patterning is performed on the substrate in a next photolithography step to form a pixel electrode.

【0003】インラインスパッタ装置は、基板を搭載し
た搬送台車をガスプラズマの放電領域を通過させながら
成膜する真空成膜法の一種である。直流スパッタリング
法を用いて成膜する場合には、イオンの衝撃を緩和する
ことを目的として、ターゲットと基板の間に正の電位に
保たれた中間電極を配置するような構成を採ることがあ
る。
An in-line sputtering apparatus is a kind of vacuum film forming method for forming a film while passing a carrier carrying a substrate through a discharge region of gas plasma. When a film is formed by a direct-current sputtering method, a configuration may be employed in which an intermediate electrode maintained at a positive potential is arranged between a target and a substrate for the purpose of reducing ion bombardment. .

【0004】このような中間電極を有するインラインス
パッタ装置としては、図4および図5に示すようなもの
が存在する。搬送台車1は、搬送方向〔矢印A方向〕と
並行に配設された背板5と、この背板5に基板2を取り
付けるホルダ3を有している。
FIGS. 4 and 5 show an in-line sputtering apparatus having such an intermediate electrode. The transport trolley 1 has a back plate 5 arranged in parallel to the transport direction [arrow A direction], and a holder 3 for attaching the substrate 2 to the back plate 5.

【0005】ホルダ3と背板5は導電体であり、両者は
絶縁ガイシ等で絶縁されている。また搬送台車1はモー
タ等の駆動装置によって軌道に沿って搬送方向〔矢印A
方向〕自走し、放電領域12を通過するように構成され
ている。
[0005] The holder 3 and the back plate 5 are conductors, and both are insulated by an insulating insulator or the like. Further, the carriage 1 is transported along a track by a driving device such as a motor in the transport direction [arrow A
Direction] It is configured to run by itself and pass through the discharge region 12.

【0006】詳しくは、図5に示すように、真空状態に
保たれた空間において、スパッタリングターゲット9と
ターゲットバッキングプレートおよび放電安定化のため
の磁気回路10とからなる放電装置は、直流電源11に
よって大きな負電圧がスパッタリングターゲット9に印
加される。8はアースシールドである。放電中のイオン
衝撃の緩和を目的とする中間電極6を直流電源7によっ
て正電位に保ち、中間電極6がスパッタリングターゲッ
ト9と基板2との間になるように配置する。
More specifically, as shown in FIG. 5, in a space maintained in a vacuum state, a discharge device including a sputtering target 9, a target backing plate, and a magnetic circuit 10 for stabilizing discharge is supplied by a DC power supply 11. A large negative voltage is applied to the sputtering target 9. 8 is an earth shield. The intermediate electrode 6 for the purpose of reducing ion bombardment during discharge is maintained at a positive potential by a DC power supply 7, and the intermediate electrode 6 is arranged between the sputtering target 9 and the substrate 2.

【0007】この大きな負電圧を印加したスパッタリン
グターゲット9と正電位に保たれた中間電極6との間で
グロー放電が発生し、ガスプラズマの放電領域12が生
じる。
[0007] A glow discharge is generated between the sputtering target 9 to which the large negative voltage is applied and the intermediate electrode 6 maintained at a positive potential, and a discharge region 12 of gas plasma is generated.

【0008】放電領域12を搬送台車1が通過すると、
アルゴン等の不活性ガスのイオンによってスパッタリン
グされたターゲット材料がスパッタリングターゲット9
から放出されて、基板2に薄膜が形成される。
When the carrier 1 passes through the discharge area 12,
The target material sputtered by ions of an inert gas such as argon is used as the sputtering target 9.
And a thin film is formed on the substrate 2.

【0009】このとき、前記スパッタリングされたター
ゲット材料が中性の場合には、ターゲット材料はそのま
ま基板2の表面へ付着する。また、ターゲット材料が正
イオン化している場合には、中間電極6が三極真空管で
いういわゆるグリッド電極となり、正イオン化したター
ゲット材料は加速されて物理的、化学的に活性な状態で
基板2に付着する。
At this time, if the sputtered target material is neutral, the target material adheres to the surface of the substrate 2 as it is. When the target material is positively ionized, the intermediate electrode 6 becomes a so-called grid electrode called a triode vacuum tube, and the positively ionized target material is accelerated and physically and chemically activated on the substrate 2. Adhere to.

【0010】また、ガスプラズマの放電領域12で発生
した電子や負にイオン化したガス等の負イオンは、正電
位に保たれた中間電極6に捕獲される。したがって、電
子や負にイオン化したガス等の負イオンは、中性あるい
は正イオンのターゲット材料が堆積した基板2の上の薄
膜に衝突してイオン衝撃を与えることがないため、異常
放電跡のない良質の薄膜が得られる。
Further, negative ions such as electrons generated in the discharge region 12 of the gas plasma and negatively ionized gas are captured by the intermediate electrode 6 maintained at a positive potential. Therefore, negative ions such as electrons and negatively ionized gas do not collide with the thin film on the substrate 2 on which the neutral or positive ion target material is deposited, and do not cause ion bombardment. A good quality thin film can be obtained.

【0011】[0011]

【発明が解決しようとする課題】搬送台車1が放電領域
12を通過しながら、基板2の表面に成膜が行われてい
る間、基板2は放電領域の正イオンおよび負イオンによ
ってある電位に帯電する。またホルダ3と背板5は導電
体であるため、放電領域の電荷により所定の電位を帯び
た状態にある。
During the film formation on the surface of the substrate 2 while the carrier 1 passes through the discharge region 12, the substrate 2 is kept at a certain potential by positive ions and negative ions in the discharge region. Charges. Since the holder 3 and the back plate 5 are conductors, the holder 3 and the back plate 5 are in a state of being given a predetermined potential by the electric charge in the discharge region.

【0012】このようなスパッタリング装置において
は、アウトプットを増やし、かつターゲット材料やプラ
ズマガス等の利用効率を向上させるために、放電領域を
通過する搬送台車1どうしの距離Lをできるだけ小さく
保ったまま連続的に移動搬送させるのが効率的である。
In such a sputtering apparatus, in order to increase the output and improve the utilization efficiency of the target material, the plasma gas and the like, the distance L between the transport vehicles 1 passing through the discharge region is kept as small as possible. It is efficient to move and convey continuously.

【0013】しかしながら、搬送台車1どうしの距離L
が近すぎると、搬送駆動装置の能力の安定性のマージン
やバラツキによって、図6に示すように隣接する搬送台
車1どうしが搬送中に接触する可能性がある。
However, the distance L between the transport vehicles 1 is
If the distances are too close, there is a possibility that adjacent transport vehicles 1 may come into contact with each other during transport, as shown in FIG. 6, due to margins and variations in the stability of the performance of the transport drive device.

【0014】搬送台車1どうしが搬送中に接触すると、
放電領域12にあって成膜中の基板2がセットされた搬
送台車1のホルダ3と背板5は所定の電位が得られなく
なる。また、放電領域12を通過している搬送台車1と
これに接触した隣接の搬送台車1とは電位的に差がある
ため、両者が接触することによって一方の搬送台車1か
ら他方の搬送台車へと急激な電荷の移動が生じる。
When the transport vehicles 1 come into contact with each other during transport,
A predetermined potential cannot be obtained between the holder 3 and the back plate 5 of the carrier 1 on which the substrate 2 on which the film is being formed is set in the discharge region 12. In addition, since there is a difference in potential between the transport vehicle 1 passing through the discharge region 12 and the adjacent transport vehicle 1 in contact therewith, the two transport vehicles move from one transport vehicle 1 to the other transport vehicle when they come into contact with each other. This causes rapid charge transfer.

【0015】その結果、成膜した薄膜に異常放電痕が生
じ、成膜工程としての歩留まりおよび生産性の低下を招
くこととなる。本発明は前記問題点を解決し、電位の異
なる搬送台車どうしの接触が発生しても、良好な成膜が
得られる基板搬送装置を提供することを目的とする。
As a result, abnormal discharge marks are formed on the formed thin film, which leads to a decrease in yield and productivity as a film forming process. It is an object of the present invention to solve the above-mentioned problems and to provide a substrate transfer apparatus capable of obtaining a good film formation even when contact between transfer carriages having different potentials occurs.

【0016】[0016]

【課題を解決するための手段】本発明は、搬送装置の一
部に絶縁体を設けたことを特徴とする。この本発明によ
ると、電位の異なる搬送台車どうしの接触が発生して
も、良好な成膜が得られ、異常放電痕の発生のない成膜
が実現でき、成膜工程としての歩留まりおよび生産性を
向上することが可能となる。
The present invention is characterized in that an insulator is provided on a part of the transfer device. According to the present invention, good film formation can be obtained even if contact between transport vehicles having different potentials occurs, film formation without generation of abnormal discharge traces can be realized, and yield and productivity as a film formation process can be improved. Can be improved.

【0017】[0017]

【発明の実施の形態】請求項1記載の基板搬送装置は、
基板がセットされた搬送台車を次々にガスプラズマの放
電領域を通過させ、前記基板の表面に成膜するインライ
ンスパッタ装置において、搬送台車には、搬送方向の前
後の少なくとも一方に接近した隣接の搬送台車に当接す
る絶縁体を突出して設けたことを特徴とする。
BRIEF DESCRIPTION OF THE DRAWINGS FIG.
In an in-line sputtering apparatus in which a carrier truck on which a substrate is set passes one after another through a discharge region of gas plasma and a film is formed on the surface of the substrate, an adjacent carrier close to at least one of the front and rear in the carrying direction is provided on the carrier. An insulator that comes into contact with the carriage is provided so as to protrude.

【0018】この構成によると、帯電した搬送台車どう
しの接触が発生しても、この接触は前記の絶縁体を介し
て接触し、一方の搬送台車から他方の搬送台車へと急激
な電荷の移動が生じない。したがって、帯電した搬送台
車どうしが接触しても、成膜した薄膜に異常放電痕が生
じることがなく、成膜工程の歩留まりや生産性を向上さ
せることができる。
According to this configuration, even if contact occurs between the charged transport vehicles, the contact comes into contact via the insulator, and abrupt transfer of charge from one transport vehicle to the other transport vehicle occurs. Does not occur. Therefore, even if the charged transport vehicles come into contact with each other, no abnormal discharge marks are formed on the formed thin film, and the yield and productivity of the film forming process can be improved.

【0019】具体的には、搬送台車の背板とホルダの少
なくとも一方に、接近した隣接の搬送台車に当接する絶
縁体を突出して設ける。以下、本発明の各実施の形態を
図1〜図3を用いて説明する。
Specifically, at least one of the back plate and the holder of the transport vehicle is provided with a protruding insulator that contacts an adjacent transport vehicle. Hereinafter, embodiments of the present invention will be described with reference to FIGS.

【0020】なお、従来例を示す図4,図5と同様の作
用をなすものには同一の符号を付けて説明する。 (実施の形態1)図1と図2は(実施の形態1)を示
す。
4 and 5 showing the conventional example will be described with the same reference numerals. (Embodiment 1) FIGS. 1 and 2 show (Embodiment 1).

【0021】この搬送台車1には、搬送方向と並行に配
設された背板5に、絶縁体4が突出して設けられてい
る。液晶表示器に使われる基板2の大きさは、360m
m×420mm程度のもので、この基板2はホルダ3に
よって背板5にセットされている。なお、絶縁体4は搬
送台車1の搬送方向に対して後側に形成されている。
In the carrier 1, an insulator 4 is provided so as to protrude from a back plate 5 arranged in parallel with the carrier direction. The size of the substrate 2 used for the liquid crystal display is 360 m
The substrate 2 is set to a back plate 5 by a holder 3. Note that the insulator 4 is formed on the rear side in the transport direction of the transport vehicle 1.

【0022】このような構成の搬送台車1を図2に示す
ように放電領域12を通過するように連続的に通過させ
て成膜中に、接近した隣接の搬送台車1どうしが接触し
ても、放電領域12にある搬送台車1と搬送方向の前側
にある搬送台車1との間には、前側にある搬送台車1の
背板5に設けられた絶縁体4が介在して接触しており、
この両者間では電荷の移動が発生しない。
As shown in FIG. 2, the transport carriage 1 having such a structure is continuously passed so as to pass through the discharge region 12, so that even if adjacent transport carriages 1 come into contact with each other during film formation. The insulator 4 provided on the back plate 5 of the transport vehicle 1 on the front side is interposed between the transport vehicle 1 in the discharge region 12 and the transport vehicle 1 on the front side in the transport direction. ,
No charge transfer occurs between the two.

【0023】また、放電領域12にある搬送台車1に対
して搬送方向の後側にある搬送台車1との間には、放電
領域12にある搬送台車1の背板5に設けられた絶縁体
4が介在して接触しており、この両者間でも電荷の移動
が発生しない。
An insulator provided on the back plate 5 of the transport vehicle 1 in the discharge region 12 is provided between the transport vehicle 1 in the discharge region 12 and the transport vehicle 1 on the rear side in the transport direction. 4 are in contact with each other, and no charge transfer occurs between them.

【0024】したがって、接触した搬送台車の間で電荷
の移動がないため、基板2の表面に成膜した薄膜に異常
放電痕が生じることがなくなり、成膜工程の歩留まりが
向上し、生産性を向上させることができる。
Accordingly, since there is no transfer of electric charge between the contacted carriages, abnormal discharge marks are not generated on the thin film formed on the surface of the substrate 2, the yield of the film forming process is improved, and the productivity is improved. Can be improved.

【0025】なお、絶縁体4は搬送方向に対して背板5
の後側に設けたが、搬送方向に対して背板5の前側に絶
縁体4を設けたり、搬送方向に対して背板5の前後に絶
縁体4を設けても同様の効果を期待できる。
It should be noted that the insulator 4 is provided on the back plate 5 in the conveying direction.
The same effect can be expected even if the insulator 4 is provided in front of the back plate 5 in the transport direction, or the insulator 4 is provided before and after the back plate 5 in the transport direction. .

【0026】(実施の形態2)図3は(実施の形態2)
を示す。この(実施の形態2)では搬送台車1のホルダ
3には、搬送方向に対して後側に絶縁体4が設けられて
いる。この場合も絶縁体4が隣接する搬送台車1との間
に介在して(実施の形態1)と同様の効果が期待でき
る。
(Embodiment 2) FIG. 3 shows (Embodiment 2)
Is shown. In this (Embodiment 2), the holder 4 of the transport vehicle 1 is provided with an insulator 4 on the rear side in the transport direction. Also in this case, the same effect as in the first embodiment can be expected because the insulator 4 is interposed between the adjacent carriages 1.

【0027】なお、絶縁体4は搬送方向に対してホルダ
3の後側に設けたが、搬送方向に対してホルダ3の前側
に絶縁体4を設けたり、搬送方向に対してホルダ3の前
後に絶縁体4を設けても同様の効果を期待できる。
Although the insulator 4 is provided on the rear side of the holder 3 with respect to the transport direction, the insulator 4 may be provided on the front side of the holder 3 with respect to the transport direction. The same effect can be expected even if the insulator 4 is provided in the first embodiment.

【0028】上記の各実施の形態では、絶縁体4は背板
5またはホルダ3の何れかに設けられていたが、背板5
とホルダ3の両方に設けることによっても同様の効果を
期待できる。
In each of the above embodiments, the insulator 4 is provided on either the back plate 5 or the holder 3.
The same effect can be expected by providing both the and the holder 3.

【0029】[0029]

【発明の効果】以上のように本発明の基板搬送装置によ
ると、搬送台車には、搬送方向の前後の少なくとも一方
に、接近した隣接の搬送台車に当接する絶縁体を突出し
て設けたため、放電領域を通過している搬送台車が隣接
する搬送台車に接触する事態が発生しても、その間には
前記の絶縁体が介在することになり、接触した搬送台車
の間での電荷の移動がなく、異常放電痕のない良好な薄
膜が得られる。したがって、成膜工程の歩留まりが向上
し、生産性を向上させることができる。
As described above, according to the substrate transfer apparatus of the present invention, the transfer carriage is provided with at least one of the front and rear insulators in contact with an adjacent transfer carriage in a protruding direction. Even if a situation occurs in which a transport vehicle that is passing through the area comes into contact with an adjacent transport vehicle, the insulator will be interposed between them, and there will be no transfer of charge between the contacted transport vehicles. And a good thin film without abnormal discharge traces can be obtained. Therefore, the yield of the film forming process is improved, and the productivity can be improved.

【図面の簡単な説明】[Brief description of the drawings]

【図1】(実施の形態1)の搬送台車の斜視図FIG. 1 is a perspective view of a carrier according to a first embodiment.

【図2】同実施の形態の搬送台車を用いたインラインス
パッタ装置の水平断面図
FIG. 2 is a horizontal cross-sectional view of an in-line sputtering apparatus using the carrier according to the embodiment.

【図3】(実施の形態2)の搬送台車の斜視図FIG. 3 is a perspective view of a carrier according to a second embodiment.

【図4】従来の搬送台車の斜視図FIG. 4 is a perspective view of a conventional carriage.

【図5】従来の搬送台車を用いたインラインスパッタ装
置の水平断面図
FIG. 5 is a horizontal cross-sectional view of an in-line sputtering apparatus using a conventional carrier.

【図6】隣接する搬送台車が接触した状態を示す水平断
面図
FIG. 6 is a horizontal cross-sectional view showing a state in which adjacent transport vehicles are in contact with each other.

【符号の説明】[Explanation of symbols]

1 搬送台車 2 基板 3 ホルダ 4 絶縁体 5 背板 12 放電領域 DESCRIPTION OF SYMBOLS 1 Transport cart 2 Substrate 3 Holder 4 Insulator 5 Back plate 12 Discharge area

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 基板がセットされた搬送台車を次々にガ
スプラズマの放電領域を通過させ、前記基板の表面に成
膜するインラインスパッタ装置において、搬送台車に
は、搬送方向の前後の少なくとも一方に、接近した隣接
の搬送台車に当接する絶縁体を突出して設けたインライ
ンスパッタ装置の基板搬送装置。
1. An in-line sputtering apparatus in which a carrier on which a substrate is set is successively passed through a discharge region of gas plasma to form a film on the surface of the substrate. A substrate transfer device of an in-line sputtering device provided with a protruding insulator provided in contact with an adjacent transfer carriage.
【請求項2】 搬送台車は、搬送方向と並行に配設され
た背板と、前記の背板に取り付けられた基板を保持する
ホルダを有しており、前記の背板とホルダの少なくとも
一方に、接近した隣接の搬送台車に当接する絶縁体を突
出して設けた請求項1記載のインラインスパッタ装置の
基板搬送装置。
2. The transfer vehicle has a back plate disposed parallel to the transfer direction, and a holder for holding a substrate attached to the back plate, and at least one of the back plate and the holder. 2. The substrate transfer device for an in-line sputtering device according to claim 1, wherein an insulator that abuts on an adjacent transfer carriage is protruded.
JP32622496A 1996-12-06 1996-12-06 Substrate transporting device for inline sputtering system Pending JPH10158837A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP32622496A JPH10158837A (en) 1996-12-06 1996-12-06 Substrate transporting device for inline sputtering system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP32622496A JPH10158837A (en) 1996-12-06 1996-12-06 Substrate transporting device for inline sputtering system

Publications (1)

Publication Number Publication Date
JPH10158837A true JPH10158837A (en) 1998-06-16

Family

ID=18185384

Family Applications (1)

Application Number Title Priority Date Filing Date
JP32622496A Pending JPH10158837A (en) 1996-12-06 1996-12-06 Substrate transporting device for inline sputtering system

Country Status (1)

Country Link
JP (1) JPH10158837A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006097994A1 (en) * 2005-03-14 2006-09-21 Thin-Film Process Inc. Sputtering apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006097994A1 (en) * 2005-03-14 2006-09-21 Thin-Film Process Inc. Sputtering apparatus

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