JPH10154733A - Bt treating device for semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To adjust easily the amount of static charge on the surface of a semiconductor wafer, by a method wherein a BT treating device for the semiconductor wafer is provided with an ion generating electrode arranged at a position apart from the surface of the wafer, a discharge means for generating discharge in the electrode, a gas feeding means which ionizes gas passing through the periphery of the electrode and, at the same time, feeds the ion-containing gas to the surface of the wafer, and a heating means for the wafer. SOLUTION: A semiconductor wafer W is placed on an insulator 10 and a heating heater is buried in the interior of the insulator 10. An ion jet nozzle 20, a gas flow rate adjuster 24 and the like are provided over the wafer W. A needlelike ion generating electrode 26 is provided in the center of the nozzle 20 and is connected with a high pressure generating power supply 30 and a voltage adjusting unit 32. When a high voltage is applied to the electrode 26, discharge is generated and gas G is ionized. The ion-containing gas is jetted through an open part formed in the point of the nozzle 20 and the surface of the wafer W is charged. A desired charging on the surface of the wafer W is executed by a method, wherein a voltage level of a positive and negative rectangular voltage waveform and an applying period are periodically subjected to voltage control to neutralize. Moreover, the desired charge can be executed also by adjusting the flow rate of the gas G.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a BT (Bias Temperature) processing apparatus for a semiconductor wafer.

[0002]

2. Description of the Related Art Mobile ions such as sodium ions are mixed into an insulating film on the surface of a semiconductor wafer during a wafer process. These mobile ions are easily moved by the electric field, thereby deteriorating the stability of the semiconductor surface.

In general, the amount of mobile ions in an insulating film is evaluated by a so-called BT process (Bias Temperature process) and a CV characteristic evaluation. The conventional BT process is a process of moving mobile ions in an insulating film by applying a DC bias to a gate electrode on the insulating film while keeping a semiconductor wafer at a high temperature. When the mobile ions move, the flat band voltage obtained by the CV measurement changes. Therefore, when the CV characteristic is measured before and after the BT process to determine the amount of change in the flat band voltage, the amount of movable ions in the insulating film can be evaluated from the amount of change.

When an electrode is formed on an insulating film,
In the electrode formation process, mobile ions may be mixed into the insulating film. Therefore, the present applicant has developed an apparatus for performing CV measurement without contact without forming an electrode on an insulating film, and discloses the apparatus in Japanese Patent Application Laid-Open No. 4-132236. In addition, a BT processing apparatus for a non-contact CV measuring apparatus has been developed.
217. This BT processing apparatus performs BT processing by holding a main surface of two semiconductor wafers facing each other with a predetermined gap therebetween and applying a predetermined DC voltage.

[0005]

However, in the case of BT processing utilizing charging, surplus charged charges are often retained on the surface of the semiconductor wafer. In order to perform the non-contact CV measurement with high accuracy, it is preferable to remove such excess charged charges. Therefore, conventionally, after the BT process, the semiconductor wafer has been immersed in pure water to remove excess charged charges.

The present invention has been made to solve the above-mentioned problems in the prior art, and has as its object to provide a BT processing technique that can easily adjust the charge amount on the surface of a semiconductor wafer.

[0007]

In order to solve at least a part of the above problems, a first invention is a BT processing apparatus for performing BT processing on a semiconductor wafer using electric discharge, Holding means for holding the semiconductor wafer, an ion generating electrode disposed at a position separated from the surface of the semiconductor wafer held by the holding means, and a discharge means for generating a discharge at the ion generating electrode, A gas supply unit for supplying a gas containing ions to the surface of the semiconductor wafer while passing a predetermined gas around the ion generating electrode to ionize the gas, and a heating unit for heating the semiconductor wafer, It is characterized by having.

[0008] The type and amount of ions can be adjusted depending on the manner of discharging. Therefore, the semiconductor wafer is charged with the first type of ion (for example, positive ion) by the discharging means, the semiconductor wafer is heated to perform the BT process, and the second type of ion (for example, negative ion) is converted into the semiconductor by the same device. It can be supplied to the wafer to neutralize excess charged charges. Therefore, the charge amount on the surface of the semiconductor wafer can be easily adjusted.

In the first aspect, the discharging means applies a positive voltage and a negative voltage to the ion generating electrode alternately and periodically, and adjusts a voltage waveform of the positive voltage and the negative voltage. It is preferable to provide a means for adjusting the type and amount of ions generated in the ion generating electrode.

By adjusting the positive and negative voltage waveforms applied to the same ion generating electrode, the type and amount of ions can be adjusted, and as a result, the charge amount on the surface of the semiconductor wafer can be easily adjusted. can do.

Further, in the first invention, the ion generating electrode includes a first ion generating electrode to which a positive voltage is applied, and a second ion generating electrode to which a negative voltage is applied. The gas supply means guides a predetermined gas around each of the first and second ion generating electrodes, and converts the gas containing ions respectively generated by the first and second ion generating electrodes into the gas. First and second gas supply paths for supplying substantially the same position on the surface of the semiconductor wafer, wherein the discharging means periodically applies a positive voltage and a negative voltage to the first and second ion generating electrodes, respectively; By applying and adjusting the voltage waveforms of the positive voltage and the negative voltage,
Means may be provided for adjusting the amounts of ions generated in the first and second ion generating electrodes, respectively.

The amount of positive and negative ions can also be adjusted by periodically applying a positive voltage and a negative voltage to the two ion generating electrodes, respectively, and adjusting their voltage waveforms. In addition, the charge amount on the surface of the semiconductor wafer can be easily adjusted.

[0013] In the first aspect, the ion generating electrode includes a first ion generating electrode to which a positive voltage is applied, and a second ion generating electrode to which a negative voltage is applied. The gas supply means supplies the gas around the first and second ion generating electrodes, respectively, and converts the gas containing ions respectively generated at the first and second ion generating electrodes into the gas. First and second gas supply paths for supplying the first and second gas supply paths to different first and second positions on the surface of the semiconductor wafer, respectively, wherein the discharging means applies a positive voltage and a negative voltage to the first and second ion generating electrodes; Means for periodically applying a voltage and adjusting the voltage waveforms of the positive voltage and the negative voltage to adjust the amount of ions generated in the first and second ion generating electrodes, respectively. Is good Arbitrariness.

The amount of positive ions supplied to the first position is
The amount of the negative ions supplied to the second position is adjusted by the waveform of the positive voltage applied to the first ion generation electrode, and the amount of the negative ions supplied to the second position is adjusted by the waveform of the negative voltage applied to the second ion generation electrode. . Therefore, the amount of charge at each position can be individually adjusted.

In the above-mentioned BT processing apparatus, the semiconductor wafer is further moved, so that the first and second gas on the surface of the semiconductor wafer to which gas is respectively supplied by the first and second gas supply passages. It is preferable to provide a wafer moving means for changing the position.

In this case, for example, after the first position is charged with positive ions by using the first ion generating electrode, the wafer is moved to exchange the first and second positions, and the second position is changed. By using the ion generating electrode, it is possible to neutralize the surplus charged charge at the first position. Therefore, it is possible to easily adjust the amount of charge at the first and second positions.

Further, in each of the above BT processing devices,
It is preferable that the gas supply means includes a flow rate adjusting means for adjusting a flow rate of the gas.

The amount of ions supplied to the semiconductor wafer can also be adjusted by adjusting the gas flow rate.

[0019]

BEST MODE FOR CARRYING OUT THE INVENTION

A. First Embodiment: Next, an embodiment of the present invention will be described based on an embodiment. FIG. 1 is a conceptual diagram showing a configuration of a BT processing device according to a first embodiment of the present invention. The BT processing apparatus includes a disk-shaped insulator 10 on which a semiconductor wafer W is mounted.
And a movable table 12 on which the insulator 10 is placed.
The moving table 12 is driven by a motor 14 to rotate in a horizontal plane, and is driven by another motor (not shown) to translate in a horizontal plane. A heater 16 for heating the semiconductor wafer W is embedded in the insulator 10. The heater 16 is controlled by a heater power supply 18. The semiconductor wafer W mounted (held) on the insulator 10 is insulated from the ground potential.

The BT processing apparatus further includes a substantially hollow cylindrical ion ejection nozzle 20 held substantially vertically above the semiconductor wafer W, a gas cylinder 22 for supplying a gas G to the ion ejection nozzle 20, A flow controller 24 for adjusting the flow rate of the gas G is provided. At the center of the ion ejection nozzle 20, a needle-like ion generating electrode 26 is provided. The ion generating electrode 26 is connected to a high voltage generating power supply 30. Electrode for ion generation 26
When a high voltage is applied to the gas to generate a discharge (corona discharge), the gas G is ionized. The gas containing ions is ejected from the opening at the tip of the ion ejection nozzle 20 to charge the surface of the semiconductor wafer W. In addition, the power supply 3 for high voltage generation
The waveform of the voltage generated at 0 is adjusted by the voltage adjusting device 32.

The insulator 10 corresponds to the holding means in the present invention. Here, “holding” has a wide meaning including a case where a wafer is simply placed and a case where the wafer is fixed by vacuum suction or the like. The high-voltage generating power supply 30 and the voltage adjusting device 32 correspond to a discharging unit in the present invention. Further, the ion ejection nozzle 20, the gas cylinder 22, and the flow controller 24 correspond to a gas supply unit in the present invention.

FIG. 2 is an explanatory diagram showing a voltage waveform when the surface of the semiconductor wafer W is charged and a voltage waveform when the surface charge is neutralized in the BT processing apparatus shown in FIG. The left half of FIG. 2 shows an example of a voltage waveform when the surface of the semiconductor wafer W is charged with positive ions. This voltage waveform has a shape in which rectangular positive and negative voltages are generated alternately and periodically. Specifically, the voltage level V
After the rectangular positive voltage of 1 (+) is generated for the period T1 (+), the rectangular negative voltage of the voltage level V1 (−) is generated for the period T1.
Only (-) has occurred. These voltage levels V1
(+), V1 (-) and the application periods T1 (+), T1
(−) Can be arbitrarily set by the voltage adjusting device 32. By adjusting these voltage levels and application periods (and / or application periods), it is possible to charge the surface of the semiconductor wafer W so as to have a desired positive voltage (for example, +5 V). Similarly, the surface of the semiconductor wafer W can be charged so as to have a desired negative voltage.

The right half of FIG. 2 shows an example of a voltage waveform in the case where charge on the surface of the semiconductor wafer W is neutralized. This voltage waveform also has a shape in which rectangular positive and negative voltages are generated alternately and periodically. After a rectangular positive voltage at the voltage level V2 (+) is generated for the period T2 (+), A rectangular negative voltage of level V2 (-) is generated only for the period T2 (-). These voltage levels V2 (+), V2
(−) And the application periods T2 (+) and T2 (−) can also be arbitrarily set by the voltage adjusting device 32. By adjusting these voltage levels and application periods (and / or application periods), it is possible to neutralize the charge on the surface of the semiconductor wafer W and to achieve a desired charge state.

The charge amount and the neutralization amount can also be adjusted by adjusting the flow rate of the gas G using the flow rate adjuster 24.

FIG. 3 shows BT processing and C in the embodiment.
6 is a graph showing changes in the charge amount and temperature on the surface of a semiconductor wafer when performing a -V measurement process. First, from time t1 to t2
Until then, use the voltage waveform shown in the left half of FIG.
The surface of the semiconductor wafer W is positively charged up to a desired voltage (+5 V). During this period, the surface of the semiconductor wafer W is kept at room temperature. In the period from time t2 to t3, + BT processing (BT processing in positive charging) is performed. That is, at time t2, the charging process is stopped, and the heating of the semiconductor wafer W by the heater 16 is started. When the semiconductor wafer W is held at a predetermined temperature (about 200 ° C.) for a certain period of time, mobile ions in the insulating film on the surface of the semiconductor wafer W move. For example, when the wafer surface is positively charged, sodium ions as mobile ions move near the interface between the insulating film and the substrate. Then, the heater 16
The semiconductor wafer W is cooled by stopping the heating by
The process ends. Due to the + BT treatment, mobile ions in the insulating film may be combined with some of the charged charges and neutralized, but excess charged charges remain on the wafer surface.
Therefore, during the period from time t3 to t4 after the wafer surface has almost reached room temperature, the neutralization of the charged charges is performed. The voltage waveform at this time is shown in the right half of FIG.

The period from the time t1 to the time t4 (from the charging process to the neutralization process) can be referred to as "broad BT process". Further, a preferable voltage waveform in the charging process and the neutralization process is experimentally determined so as to give a desired charge amount and a neutralization amount (a charge amount after neutralization).

When the neutralization is completed at time t4, the semiconductor wafer W is transferred from the BT processing apparatus to the CV measuring apparatus. Then, during the period from time t5 to t6, CV measurement is performed. As the CV measuring device, a non-contact CV measuring device described in Japanese Patent Application Laid-Open No. 4-132236 disclosed by the present applicant can be used.

Thereafter, during the period from time t11 to time t16, the surface of the semiconductor wafer W is negatively charged to perform -BT processing (BT processing in negative charging), and the CV measurement is performed again. As a result, the CV curve when the surface of the semiconductor wafer W is positively charged and the CV curve when the surface of the semiconductor wafer W is negatively charged.
V curve is obtained. From the difference between the flat band voltages in these two CV curves, the amount of mobile ions in the insulating film can be determined.

In the first embodiment described above, the semiconductor wafer W
Since the surplus charged charges on the surface can be neutralized, the amount of mobile ions in the insulating film can be accurately measured. In particular, since the charging process and the neutralization process can be performed by the same device, there is an advantage that the semiconductor wafer W does not need to be immersed in pure water or neutralized by another neutralization device.

B. FIG. 4 shows a second embodiment of the present invention.
It is a key map showing the composition of the BT processing device which is an example.
This BT processing apparatus has two ion ejection nozzles 20a,
20b and the gas G1 and G
2, two gas cylinders 22a for supplying
22b and two flow controllers 24a and 24b for adjusting the flow rates of the gases G1 and G2, respectively.
In addition, ion generating electrodes 26a and 26b are provided at the centers of the ion ejection nozzles 20a and 20b, respectively. The first ion generation electrode 26a is connected to a positive high voltage power supply 30a, and the second ion generation electrode 26b is connected to a negative high voltage power supply 30b. Note that the first gas G1 is a gas having a relatively high ionization tendency to become positive ions, and the second gas G2 is
It is a gas that has a relatively high tendency to ionize into negative ions.
However, the same type of gas (for example, nitrogen) may be used as the gases G1 and G2.

Two ion ejection nozzles 20a, 20b
Are held in an inclined state so as to eject ionized gas to substantially the same position on the surface of the semiconductor wafer W. Therefore, these two ion ejection nozzles 20a and 20b perform almost the same function as the one ion ejection nozzle 20 shown in FIG. However, in the second embodiment shown in FIG. 4, a nozzle for supplying positive ions and a nozzle for supplying negative ions are separately provided.
Can be adjusted more flexibly than the first embodiment shown in FIG.

FIG. 5 is an explanatory diagram showing a voltage waveform when the surface of the semiconductor wafer W is charged and a voltage waveform when the surface charge is neutralized in the BT processing apparatus shown in FIG. The left half of FIG. 5 shows an example of a voltage waveform when the surface of the semiconductor wafer W is charged with positive ions.
The upper half is the voltage applied by the positive high voltage power supply 30a, and the lower half is the voltage applied by the negative high voltage power supply 30b. The voltage waveform by the positive high voltage generating power supply 30a has a shape in which a rectangular positive voltage is generated intermittently and periodically. Specifically, a rectangular positive voltage at the voltage level V10 (+) is generated intermittently in the period T10 (+) only during the period T11 (+). On the other hand, a power supply 30b for generating a negative high voltage
Has a shape in which a rectangular negative voltage is generated intermittently and periodically. Specifically, the voltage level V1
A rectangular positive voltage of 0 (-) is generated intermittently in the period T10 (-) for the period T11 (-). As described above, the intermittent generation of the high voltage has an advantage that the discharge is easily generated.

The right half of FIG. 5 shows an example of a voltage waveform in the case where charge on the surface of the semiconductor wafer W is neutralized. This voltage waveform also has a rectangular shape in which positive and negative voltages are generated intermittently and periodically. That is, the voltage waveform by the positive high voltage generating power supply 30a is the voltage level V2
A rectangular positive voltage of 0 (+) is generated intermittently in the period T20 (+) for the period T21 (+). On the other hand, the voltage waveform by the negative high voltage generating power supply 30b is the voltage level T20.
The positive voltage of the rectangular shape of (−) corresponds to the period T21 (−) for the period T.
It occurs intermittently at 20 (-).

Incidentally, similarly to the first embodiment, the voltage level and the application period (and / or the application period) can be arbitrarily adjusted in the second embodiment. However, in the second embodiment, since the positive voltage and the negative voltage are applied to the separate ion generating electrodes 26a and 26b, respectively, the application period of the positive voltage and the negative voltage (for example, T10 (+) and T10 (-)) Can be set to different values. It is also possible to arbitrarily adjust the flow rates of the gases G1 and G2 using the flow rate adjusters 24a and 24b. The second embodiment also has substantially the same effect as the first embodiment.

C. Third Embodiment FIG. 6 shows a third embodiment of the present invention.
It is a key map showing the composition of the BT processing device which is an example.
The BT processing apparatus of the third embodiment has substantially the same configuration as that of the BT processing apparatus of the second embodiment shown in FIG. 4, but the two ion ejection nozzles 20a and 20b are respectively held substantially vertically. The difference is that gas containing ions is ejected to two different positions on the surface of the semiconductor wafer W, respectively. These two positions are preferably present on one diameter of the same circumference when the semiconductor wafer W is rotated by the motor 14. In this case, the semiconductor wafer W
By rotating, the two positions can be exchanged.

FIG. 7 is an explanatory diagram showing a voltage waveform when charging the surface of the semiconductor wafer W and a voltage waveform when neutralizing the surface charge in the BT processing apparatus shown in FIG. The left half of FIG. 7 shows an example of a voltage waveform when the surface of the semiconductor wafer W is charged with positive ions.
The upper half is the voltage applied by the positive high voltage power supply 30a, and the lower half is the voltage applied by the negative high voltage power supply 30b. The voltage waveform by the positive high voltage generating power supply 30a has a shape in which a rectangular positive voltage is generated intermittently and periodically. Specifically, a rectangular positive voltage of the voltage level V30 (+) is generated intermittently in the cycle T30 (+) for the period T31 (+). On the other hand, a power supply 30b for generating a negative high voltage
Has a shape in which a rectangular negative voltage is generated intermittently and periodically. Specifically, the voltage level V3
A rectangular positive voltage of 0 (-) is generated intermittently in the period T30 (-) for the period T31 (-).

The right half of FIG. 7 shows an example of a voltage waveform when neutralizing the charging of the surface of the semiconductor wafer W. However, when performing the neutralization in the third embodiment, the motor 14
By rotating the semiconductor wafer W by 180 degrees, the position where the positive ions are blown and the position where the negative ions are blown are exchanged. In the voltage waveform from the positive high voltage generating power supply 30a, a rectangular positive voltage having a voltage level V40 (+) is generated intermittently in a period T41 (+) in a period T40 (+). On the other hand, the voltage waveform by the power supply 30b for generating a negative high voltage has a rectangular positive voltage of the voltage level T40 (-) during the period T4.
Only 1 (-) occurs intermittently in the cycle T40 (-).

As in the first and second embodiments,
Also in the third embodiment, the voltage level and the application period (and / or the application period) can be arbitrarily adjusted. Further, the gas G1, G2 is controlled by using the flow controllers 24a, 24b.
Can be adjusted arbitrarily. The third embodiment also has substantially the same effects as the first and second embodiments. In particular, the third embodiment has the advantage that two positions on the surface of the semiconductor wafer W can be simultaneously charged positively and negatively, and that these positions can be simultaneously neutralized.

D. FIG. 8 shows a fourth embodiment of the present invention.
It is a key map showing the composition of the BT processing device which is an example.
This BT processing apparatus is obtained by adding a surface voltmeter 40 and a probe 42 of the surface voltmeter 40 to the BT processing apparatus of the first embodiment shown in FIG. The probe 42 is held above the semiconductor wafer W. The probe 42 and the surface voltmeter 40 are measuring means for measuring the potential on the surface of the semiconductor wafer W.

FIG. 8B is a plan view showing the positional relationship among the semiconductor wafer W, the ion ejection nozzle 20, and the probe 42. As can be seen from this figure, the ion ejection nozzle 2
The position on the wafer surface onto which ions are ejected by 0 and the position directly below the probe 42 are on the same circumference when the semiconductor wafer W is rotated by the motor 14. Therefore, after the semiconductor wafer W is charged, the wafer is rotated, and the charge amount is measured by the surface voltmeter 40 and the probe 4.
2 can be measured. In the case of the neutralization treatment, the charge amount after the neutralization can be measured. Therefore, there is an advantage that the charging process and the neutralization process can be performed while measuring the charge amount so as to obtain a desired charge amount. The surface electrometer 40 and its probe 42 are
The present invention can be applied to the second and third embodiments.

The present invention is not limited to the above-described examples and embodiments, but can be implemented in various modes without departing from the scope of the invention.

[Brief description of the drawings]

FIG. 1 is a conceptual diagram showing a configuration of a BT processing device according to a first embodiment of the present invention.

FIG. 2 is an explanatory diagram showing voltage waveforms in the BT processing device of the first embodiment.

FIG. 3 is a graph showing changes in charge amount and temperature on the surface of a semiconductor wafer when performing BT processing and CV measurement processing in an example.

FIG. 4 is a conceptual diagram showing a configuration of a BT processing device according to a second embodiment of the present invention.

FIG. 5 is an explanatory diagram showing voltage waveforms in the BT processing device of the second embodiment.

FIG. 6 is a conceptual diagram showing a configuration of a BT processing device according to a third embodiment of the present invention.

FIG. 7 is an explanatory diagram showing voltage waveforms in the BT processing device according to the third embodiment.

FIG. 8 is a conceptual diagram showing a configuration of a BT processing device according to a fourth embodiment of the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 10 ... Insulator 12 ... Moving stand 14 ... Motor 16 ... Heater 18 ... Heater power supply 20 ... Ion ejection nozzle 22 ... Gas cylinder 24 ... Flow controller 26 ... Ion generation electrode 30 ... High voltage generation power supply 30a ... Positive high pressure generation Power supply 30b Power supply for generating negative high voltage 32 Voltage regulator 40 Surface electrometer 42 Probe

Claims (6)

[Claims] 1. A BT processing apparatus for performing BT processing on a semiconductor wafer using electric discharge, comprising: a holding unit for holding the semiconductor wafer; and a BT processing device at a position separated from a surface of the semiconductor wafer held by the holding unit. An electrode for ion generation, a discharge unit for generating a discharge in the electrode for ion generation, and a gas containing ions while passing a predetermined gas around the electrode for ion generation to ionize the gas. A BT processing apparatus comprising: a gas supply unit that supplies a gas to a surface of the semiconductor wafer; and a heating unit that heats the semiconductor wafer. 2. The BT processing apparatus according to claim 1, wherein the discharging unit applies a positive voltage and a negative voltage to the ion generating electrode alternately and periodically, and controls the positive and negative voltages. A BT processing apparatus, comprising: means for adjusting the type and amount of ions generated in the ion generation electrode by adjusting a voltage waveform. 3. The BT processing apparatus according to claim 1, wherein the ion generating electrode is a first ion generating electrode to which a positive voltage is applied, and a second ion generating electrode to which a negative voltage is applied. The gas supply means guides a predetermined gas around the first and second ion generating electrodes, respectively, and generates ions generated by the first and second ion generating electrodes, respectively. First and second gas supply paths for supplying a gas containing the same to substantially the same position on the surface of the semiconductor wafer, wherein the discharging means applies a positive voltage and a negative voltage to the first and second ion generating electrodes. Are applied periodically,
A BT processing apparatus comprising: means for adjusting the amount of ions generated in the first and second ion generation electrodes by adjusting the voltage waveforms of the positive voltage and the negative voltage, respectively. 4. The BT processing apparatus according to claim 1, wherein the electrode for ion generation is a first electrode for ion generation to which a positive voltage is applied, and a second ion generation electrode to which a negative voltage is applied. The gas supply means supplies the gas around the first and second ion generating electrodes, respectively, and the ions generated by the first and second ion generating electrodes, respectively. First and second gas supply passages for supplying a gas containing, respectively, to first and second positions different from each other on the surface of the semiconductor wafer, wherein the discharging means includes the first and second ion generating electrodes. While periodically applying a positive voltage and a negative voltage to
A BT processing apparatus comprising: means for adjusting the amount of ions generated in the first and second ion generation electrodes by adjusting the voltage waveforms of the positive voltage and the negative voltage, respectively. 5. The BT processing device according to claim 4, wherein
Further, by moving the semiconductor wafer, the first
And a wafer moving means for exchanging the first and second positions on the surface of the semiconductor wafer to which gas is supplied by a second gas supply path. 6. B according to claim 1, wherein
A T processing apparatus, wherein the gas supply unit includes a flow rate adjustment unit that adjusts a flow rate of a gas.