JPH10147553A - Liquid crystal compound excellent in dependence of response speed on temperature and having stable antiferroelectric phase - Google Patents
Liquid crystal compound excellent in dependence of response speed on temperature and having stable antiferroelectric phaseInfo
- Publication number
- JPH10147553A JPH10147553A JP8320943A JP32094396A JPH10147553A JP H10147553 A JPH10147553 A JP H10147553A JP 8320943 A JP8320943 A JP 8320943A JP 32094396 A JP32094396 A JP 32094396A JP H10147553 A JPH10147553 A JP H10147553A
- Authority
- JP
- Japan
- Prior art keywords
- liquid crystal
- response speed
- crystal compound
- temperature
- dependence
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 51
- 150000001875 compounds Chemical class 0.000 title claims abstract description 31
- 230000004044 response Effects 0.000 title claims abstract description 30
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 4
- 125000004432 carbon atom Chemical group C* 0.000 claims description 6
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 abstract description 14
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 abstract description 7
- 238000006243 chemical reaction Methods 0.000 abstract description 6
- SWTGVSCSSDYINB-UHFFFAOYSA-N 1-bromo-4-decylbenzene Chemical compound CCCCCCCCCCC1=CC=C(Br)C=C1 SWTGVSCSSDYINB-UHFFFAOYSA-N 0.000 abstract description 3
- 239000012320 chlorinating reagent Substances 0.000 abstract description 3
- 230000007547 defect Effects 0.000 abstract description 3
- 239000012299 nitrogen atmosphere Substances 0.000 abstract description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 abstract 1
- 238000003747 Grignard reaction Methods 0.000 abstract 1
- 125000001584 benzyloxycarbonyl group Chemical group C(=O)(OCC1=CC=CC=C1)* 0.000 abstract 1
- ZNSSPLQZSUWFJT-UHFFFAOYSA-N pentyl 4-hydroxybenzoate Chemical compound CCCCCOC(=O)C1=CC=C(O)C=C1 ZNSSPLQZSUWFJT-UHFFFAOYSA-N 0.000 abstract 1
- UYWQUFXKFGHYNT-UHFFFAOYSA-N phenylmethyl ester of formic acid Natural products O=COCC1=CC=CC=C1 UYWQUFXKFGHYNT-UHFFFAOYSA-N 0.000 abstract 1
- 239000007858 starting material Substances 0.000 abstract 1
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 abstract 1
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 21
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 21
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 18
- 239000005262 ferroelectric liquid crystals (FLCs) Substances 0.000 description 18
- -1 (4-decylphenyl) dichloroethylsilane Chemical compound 0.000 description 15
- 238000000034 method Methods 0.000 description 15
- 230000005684 electric field Effects 0.000 description 14
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 12
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 12
- 239000000203 mixture Substances 0.000 description 10
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 9
- 239000012043 crude product Substances 0.000 description 9
- 239000000243 solution Substances 0.000 description 9
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 8
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 8
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 5
- 238000002834 transmittance Methods 0.000 description 5
- VHYFNPMBLIVWCW-UHFFFAOYSA-N 4-Dimethylaminopyridine Chemical compound CN(C)C1=CC=NC=C1 VHYFNPMBLIVWCW-UHFFFAOYSA-N 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000000706 filtrate Substances 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 230000010287 polarization Effects 0.000 description 4
- NROKBHXJSPEDAR-UHFFFAOYSA-M potassium fluoride Chemical compound [F-].[K+] NROKBHXJSPEDAR-UHFFFAOYSA-M 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- 230000002269 spontaneous effect Effects 0.000 description 4
- 238000003786 synthesis reaction Methods 0.000 description 4
- FYSNRJHAOHDILO-UHFFFAOYSA-N thionyl chloride Chemical compound ClS(Cl)=O FYSNRJHAOHDILO-UHFFFAOYSA-N 0.000 description 4
- ZOYFEXPFPVDYIS-UHFFFAOYSA-N trichloro(ethyl)silane Chemical compound CC[Si](Cl)(Cl)Cl ZOYFEXPFPVDYIS-UHFFFAOYSA-N 0.000 description 4
- OIJXLIIMXHRJJH-UHFFFAOYSA-N ac1nbclq Chemical compound C1C(C(C)(C)O)C2(OC)CCC31C1CC(C4=5)=CC=C(O)C=5OC2C34CCN1CC1CC1 OIJXLIIMXHRJJH-UHFFFAOYSA-N 0.000 description 3
- 230000001747 exhibiting effect Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000005160 1H NMR spectroscopy Methods 0.000 description 2
- 229960000549 4-dimethylaminophenol Drugs 0.000 description 2
- ZIKOORMHPRJIRR-UHFFFAOYSA-N C(CCCCCCCCC)C1=CC=C(C=C1)C1=CC(=C(C=C1)C(=O)Cl)F Chemical compound C(CCCCCCCCC)C1=CC=C(C=C1)C1=CC(=C(C=C1)C(=O)Cl)F ZIKOORMHPRJIRR-UHFFFAOYSA-N 0.000 description 2
- XZLGUQARUJOGLH-UHFFFAOYSA-N CCCCCCCCCCC1=CC=C(C=C1)C2=CC(=C(C=C2)C(=O)O)F Chemical compound CCCCCCCCCCC1=CC=C(C=C1)C2=CC(=C(C=C2)C(=O)O)F XZLGUQARUJOGLH-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- CSNNHWWHGAXBCP-UHFFFAOYSA-L Magnesium sulfate Chemical compound [Mg+2].[O-][S+2]([O-])([O-])[O-] CSNNHWWHGAXBCP-UHFFFAOYSA-L 0.000 description 2
- 239000004988 Nematic liquid crystal Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical class [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- 230000005620 antiferroelectricity Effects 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 150000004795 grignard reagents Chemical class 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 230000003446 memory effect Effects 0.000 description 2
- DLILIUSWDLJMCE-UHFFFAOYSA-N methyl 4-bromo-2-fluorobenzoate Chemical compound COC(=O)C1=CC=C(Br)C=C1F DLILIUSWDLJMCE-UHFFFAOYSA-N 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 239000012046 mixed solvent Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000011698 potassium fluoride Substances 0.000 description 2
- 235000003270 potassium fluoride Nutrition 0.000 description 2
- 238000010992 reflux Methods 0.000 description 2
- 239000000741 silica gel Substances 0.000 description 2
- 229910002027 silica gel Inorganic materials 0.000 description 2
- 238000010898 silica gel chromatography Methods 0.000 description 2
- 239000000725 suspension Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- IGNTWNVBGLNYDV-UHFFFAOYSA-N triisopropylphosphine Chemical compound CC(C)P(C(C)C)C(C)C IGNTWNVBGLNYDV-UHFFFAOYSA-N 0.000 description 2
- UHOLAHBNKZHMAS-UHFFFAOYSA-N 2-[(4-amino-4-decoxycyclohexa-1,5-dien-1-yl)methylidene]-3-benzylidene-4-methylhexanoic acid Chemical compound CCCCCCCCCCOC1(CC=C(C=C1)C=C(C(=CC2=CC=CC=C2)C(C)CC)C(=O)O)N UHOLAHBNKZHMAS-UHFFFAOYSA-N 0.000 description 1
- NLCHQMDYTVOMRV-UHFFFAOYSA-N 3-decyl-4-phenylbenzoic acid Chemical compound CCCCCCCCCCc1cc(ccc1-c1ccccc1)C(O)=O NLCHQMDYTVOMRV-UHFFFAOYSA-N 0.000 description 1
- JPVUWCPKMYXOKW-UHFFFAOYSA-N 4-phenylbenzoyl chloride Chemical compound C1=CC(C(=O)Cl)=CC=C1C1=CC=CC=C1 JPVUWCPKMYXOKW-UHFFFAOYSA-N 0.000 description 1
- 239000007818 Grignard reagent Substances 0.000 description 1
- 206010047571 Visual impairment Diseases 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- PFMKUUJQLUQKHT-UHFFFAOYSA-N dichloro(ethyl)silicon Chemical compound CC[Si](Cl)Cl PFMKUUJQLUQKHT-UHFFFAOYSA-N 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- PSHKMPUSSFXUIA-UHFFFAOYSA-N n,n-dimethylpyridin-2-amine Chemical compound CN(C)C1=CC=CC=N1 PSHKMPUSSFXUIA-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 238000000790 scattering method Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
Landscapes
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Liquid Crystal Substances (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、室温付近で安定な
反強誘電性を示しかつディスプレイ表示上不可欠な特性
である応答速度の温度依存性に優れた反強誘電性液晶化
合物に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an antiferroelectric liquid crystal compound which exhibits stable antiferroelectricity near room temperature and has excellent temperature dependence of response speed which is an essential property for display display.
【0002】[0002]
【従来技術】液晶表示素子は、1)低電圧作動性、2)
低消費電力性、3)薄形表示、4)受光型などの優れた
特徴を有するため、現在まで、TN方式、STN方式、
ゲスト−ホスト(Gest−Host)方式などが開発
され実用化されている。2. Description of the Related Art Liquid crystal display devices are 1) low-voltage operable 2).
Since it has excellent features such as low power consumption, 3) thin display, and 4) light receiving type, TN method, STN method,
A guest-host method has been developed and put into practical use.
【0003】しかし、現在広く利用されているネマチッ
ク液晶を用いたものは、応答速度が数msec〜数十m
secと遅い欠点があり、応用上種々の制約を受けてい
る。However, those using nematic liquid crystals which are widely used at present have a response speed of several msec to several tens m.
There is a drawback of as slow as sec, and there are various restrictions in application.
【0004】これらの問題を解決するため、STN方式
や薄層トランジスタなどを用いたアクティブマトリック
ス方式などが開発されたが、STN型表示素子は、表示
コントラストや視野角などの表示品位は優れたものとな
ったが、セルギャップやチルト角の制御に高い精度を必
要とすることや応答がやや遅いことなどが問題となって
いる。In order to solve these problems, an STN method and an active matrix method using thin-layer transistors have been developed. However, STN-type display elements have excellent display quality such as display contrast and viewing angle. However, there is a problem that high accuracy is required for controlling the cell gap and the tilt angle, and that the response is slightly slow.
【0005】このため、応答性のすぐれた新しい液晶表
示方式の開発が要望されており、光学応答時間がμse
cオーダーと極めて短かい超高速デバイスが可能になる
強誘電性液晶の開発が試みられていた。For this reason, there is a demand for the development of a new liquid crystal display system having excellent responsiveness, and the optical response time is μs
Attempts have been made to develop ferroelectric liquid crystals capable of realizing ultra-high-speed devices as short as c-orders.
【0006】強誘電性液晶は、1975年、Meyer
等によりDOBAMBC(p−デシルオキシベンジリデ
ン−p−アミノ−2−メチルブチルシンナメート)が初
めて合成された(Le Journal de Phy
sique,36巻1975,L−69)。[0006] Ferroelectric liquid crystals were introduced in 1975 by Meyer.
DOBMMBC (p-decyloxybenzylidene-p-amino-2-methylbutylcinnamate) was synthesized for the first time (Le Journal de Phys).
sque, 36, 1975, L-69).
【0007】さらに、1980年、ClarkとLag
awallによりDOBAMBCのサブマイクロ秒の高
速応答、メモリー特性など表示デバイス上の特性が報告
されて以来、強誘電性液晶が大きな注目を集めるように
なった〔N.A.Clark,etal.,Appl.
Phys.Lett.36.899(1980)〕。Further, in 1980, Clark and Lag
Ferroelectric liquid crystals have attracted a great deal of attention since the reporting of characteristics on display devices such as the fast response time of DOBAMBC in sub-microseconds and memory characteristics by AWall [N. A. Clark, et al. , Appl.
Phys. Lett. 36.899 (1980)].
【0008】しかし、彼らの方式には、実用化に向けて
多くの技術的課題があり、特に室温で強誘電性液晶を示
す材料は無く、表示ディスプレーに不可欠な液晶分子の
配列制御に有効かつ実用的な方法も確立されていなかっ
た。However, their methods have many technical problems for practical use. In particular, there is no material showing a ferroelectric liquid crystal at room temperature, and it is effective for controlling the alignment of liquid crystal molecules indispensable for a display. No practical method has been established.
【0009】この報告以来、液晶材料/デバイス両面か
らの様々な試みがなされ、ツイスト二状態間のスイッチ
ングを利用した表示デバイスが試作され、それを用いた
高速電気光学装置も例えば特開昭56−107216号
などで提案されているが、高いコントラストや適正なし
きい値特性は得られていない。Since this report, various attempts have been made from both sides of the liquid crystal material / device, and a display device utilizing switching between two twisted states has been prototyped. A high-speed electro-optical device using the same has also been disclosed in, for example, No. 107216, but high contrast and proper threshold characteristics have not been obtained.
【0010】このような視点から他のスイッチング方式
についても探索され、過渡的な散乱方式が提案された。
その後、1988年に本発明者らによる三安定状態を有
する液晶の三状態スイッチング方式が報告された〔A.
D.L.Chandani,T.Hagiwara,
Y.Suzuki etal.,Japan J.of
Appl.Phys.,27,(5),L729−L7
32(1988)〕。[0010] From such a viewpoint, other switching methods have been searched, and a transient scattering method has been proposed.
Then, in 1988, the present inventors reported a three-state switching method of a liquid crystal having a tristable state [A.
D. L. Chandani, T .; Hagiwara,
Y. Suzuki et al. , Japan J .; of
Appl. Phys. , 27, (5), L729-L7
32 (1988)].
【0011】前記「三状態を有する」とは、第一の電極
基板と所定の間隙を隔てて配置されている第二の電極基
板の間に強誘電性液晶が挟まれてなる液晶電気光学装置
において、前記第一及び第二の電極基板に電界形成用の
電圧が印加されるよう構成されており、図1Aで示され
る三角波として電圧を印加したとき、図1Dのように前
記強誘電性液晶が、無電界時に分子配向が第一の安定状
態(図1Dの1)を有し、かつ、電界印加時に一方の電
界方向に対し分子配向が前記第一の安定状態とは異なる
第二の安定状態(図1Dの2)を有し、さらに他方の電
界方向に対し前記第一及び第二の安定状態とは異なる第
三の分子配向安定状態(図1Dの3)を有することを意
味する。なお、この三安定状態、すなわち三状態を利用
する液晶電気光学装置については、本出願人は特願昭6
3−70212号として出願し、特開平2−15332
2号として公開されている。The above-mentioned "having three states" refers to a liquid crystal electro-optical device in which a ferroelectric liquid crystal is sandwiched between a first electrode substrate and a second electrode substrate arranged with a predetermined gap. Wherein a voltage for forming an electric field is applied to the first and second electrode substrates, and when a voltage is applied as a triangular wave shown in FIG. 1A, the ferroelectric liquid crystal is applied as shown in FIG. 1D. Has a second stable state in which the molecular orientation has a first stable state (1 in FIG. 1D) when no electric field is applied, and the molecular orientation is different from the first stable state in one electric field direction when an electric field is applied. State (2 in FIG. 1D) and a third molecular orientation stable state (3 in FIG. 1D) different from the first and second stable states in the other electric field direction. The applicant of the present invention discloses a three-stable state, that is, a liquid crystal electro-optical device utilizing the three states.
No. 3-70212 and Japanese Patent Application Laid-Open No. Hei 2-15332.
Published as Issue 2.
【0012】三安定状態を示す反強誘電性液晶の特徴を
さらに詳しく説明する。クラーク/ラガバァル(Cla
rk−Lagawall)により提案された表面安定化
強誘電性液晶素子では、S*C相において強誘電性液晶分
子が図2(a),(b)のように一方向に均一配向した
2つの安定状態を示し、印加電界の方向により、どちら
か一方の状態に安定化され、電界を切ってもその状態が
保持される。The characteristics of the antiferroelectric liquid crystal exhibiting a tristable state will be described in more detail. Clark / Ragaval (Cla
In the surface-stabilized ferroelectric liquid crystal device proposed by rk-Lagawall, two stable liquid crystal molecules in which the ferroelectric liquid crystal molecules are uniformly aligned in one direction in the S * C phase as shown in FIGS. A state is shown, and the state is stabilized to one of the states depending on the direction of the applied electric field, and the state is maintained even when the electric field is cut off.
【0013】しかしながら実際には、強誘電性液晶分子
の配向状態は、液晶分子のダイレクターが捩れたツイス
ト二状態を示したり、層がくの字に折れ曲ったシエブロ
ン構造を示す。シエブロン層構造では、スイッチング角
が小さくなり低コントラストの原因になるなど、実用化
へ向けて大きな障害になっている。However, in practice, the orientation state of the ferroelectric liquid crystal molecules shows a twisted two state in which the director of the liquid crystal molecules is twisted, or shows a Chevron structure in which the layer is bent in a square shape. In the case of the Chevron layer structure, the switching angle becomes small and causes a low contrast, which is a major obstacle for practical use.
【0014】一方、“反”強誘電性液晶は三安定状態を
示すS*(3)相では、上記液晶電気光学装置において、無
電界時には、図3(a)に示すごとく隣り合う層毎に分
子は逆方向に傾き反平行に配列し、液晶分子の双極子は
お互に打ち消し合っている。したがって、液晶層全体と
して自発分極は打ち消されている。この分子配列を示す
液晶相は、図1Dの1に対応している。On the other hand, in the S * (3) phase in which the "anti" ferroelectric liquid crystal exhibits a tristable state, in the above-mentioned liquid crystal electro-optical device, when there is no electric field, as shown in FIG. The molecules are tilted in opposite directions and arranged antiparallel, and the dipoles of the liquid crystal molecules cancel each other. Therefore, the spontaneous polarization is canceled in the entire liquid crystal layer. The liquid crystal phase exhibiting this molecular arrangement corresponds to 1 in FIG. 1D.
【0015】さらに、(+)又は(−)のしきい値より
充分大きい電圧を印加すると、図3(b)および(c)
に示す液晶分子が同一方向に傾き平行に配列する。この
状態では、分子の双極子も同一方向に揃うため自発分極
が発生し、強誘電相となる。Further, when a voltage sufficiently higher than the threshold value of (+) or (-) is applied, FIGS.
Are arranged in parallel in the same direction. In this state, the dipoles of the molecules are also aligned in the same direction, so that spontaneous polarization occurs and a ferroelectric phase is formed.
【0016】すなわち、“反”強誘電性液晶のS*(3)相
においては、無電界時の“反”強誘電相と印加電界の極
性による2つの強誘電相が安定になり、“反”強誘電相
と2つの強誘電相間を直流的しきい値を持って三安定状
態間スイッチングを行うものである。このスイッチング
に伴う液晶分子配列の変化により図4に示すダブル・ヒ
ステリシスを描いて光透過率が変化する。That is, in the S * (3) phase of the “anti” ferroelectric liquid crystal, the “anti” ferroelectric phase in the absence of an electric field and the two ferroelectric phases depending on the polarity of the applied electric field become stable, and the “anti” ferroelectric phase becomes stable. "Switching between three stable states with a DC threshold value between a ferroelectric phase and two ferroelectric phases. Due to the change in the liquid crystal molecule arrangement accompanying the switching, the light transmittance changes in a double hysteresis shown in FIG.
【0017】このダブル・ヒステリシスに、図4の
(A)に示すようにバイアス電圧を印加して、さらにパ
ルス電圧を重畳することによりメモリー効果を実現でき
る特徴を有する。As shown in FIG. 4A, a memory effect can be realized by applying a bias voltage to the double hysteresis and further superimposing a pulse voltage.
【0018】さらに、電界印加により強誘電相は層がス
トレッチされ、ブックシエルフ構造となる。一方、第三
安定状態の“反”強誘電相では類似ブックシエルフ構造
となる。この電界印加による層構造スイッチングが液晶
層に動的シエアーを与えるため駆動中に配向欠陥が改善
され、良好な分子配向が実現できる。Further, the layer of the ferroelectric phase is stretched by the application of an electric field, and a bookshelf structure is formed. On the other hand, the "anti" ferroelectric phase in the third stable state has a similar bookshelf structure. Since the layer structure switching by the application of the electric field gives dynamic shear to the liquid crystal layer, alignment defects are improved during driving, and good molecular alignment can be realized.
【0019】そして、“反”強誘電性液晶では、プラス
側とマイナス側の両方のヒステリシスを交互に使い画像
表示を行なうため、自発分極に基づく内部電界の蓄積に
よる画像の残像現象を防止することができる。In the "anti" ferroelectric liquid crystal, image display is performed by using both the positive and negative hysteresis alternately, so that the afterimage phenomenon of the image due to the accumulation of the internal electric field based on the spontaneous polarization is prevented. Can be.
【0020】以上のように、“反”強誘電性液晶は、
1)高速応答が可能で、2)高いコントラストと広い視
野角および3)良好な配向特性とメモリー効果が実現で
きる、非常に有用な液晶化合物と言える。As described above, the "anti" ferroelectric liquid crystal is
It can be said that this is a very useful liquid crystal compound capable of 1) high-speed response, 2) high contrast and a wide viewing angle, and 3) excellent alignment characteristics and a memory effect.
【0021】“反”強誘電性液晶の三安定状態を示す液
晶相については、1)A.D.L.Chandani
etal.,Japan J.Appl.Phys.,2
8,L−1265(1989)、2)H.Orihar
a etal.,JapanJ.Appl.Phys.,
29,L−333(1990)に報告されており、
“反”強誘電的性質にちなみS*CA相(Antifer
roelectricSmectic C*相)と命名
している。本発明者らは、この液晶相が三安定状態間の
スイッチングを行なうためS*(3)相と定義した。The liquid crystal phase showing a tristable state of the "anti" ferroelectric liquid crystal is described in 1) A. D. L. Chandani
et al., Japan J. et al. Appl. Phys., 2
8 , L-1265 (1989), 2) H.E. Orihar
a et al., JapanJ. Appl. Phys.,
29 , L-333 (1990);
S * CA phase (Antifer) for its “anti” ferroelectric properties
(selective Sectic C * phase). The present inventors have defined this liquid crystal phase as the S * (3) phase because it switches between the three stable states.
【0022】三安定状態を示す“反”強誘電相S*(3)を
相系列に有する液晶化合物は、本発明者の出願した特開
平1−316367号、特開平1−316372号、特
開平1−316339号、特開平2−28128号及び
市橋等の特開平1−213390号公報があり、また三
安定状態を利用した液晶電気光学装置としては本出願人
は特開平2−40625号、特開平2−153322
号、特開平2−173724号において新しい提案を行
っている。Liquid crystal compounds having an "anti" ferroelectric phase S * (3) exhibiting a tristable state in a phase series are disclosed in JP-A-1-316367, JP-A-1-316372 and JP-A-1-316372, filed by the present inventors. There are JP-A-1-316339, JP-A-2-28128, and JP-A-1-213390 such as Ichihashi. As a liquid crystal electro-optical device utilizing a tristable state, the applicant of the present invention discloses JP-A-2-40625. Kaihei 2-153322
And Japanese Patent Application Laid-Open No. 2-173724.
【0023】“反”強誘電性液晶を液晶ディスプレイへ
応用する場合、1)動作温度範囲、2)応答速度、3)
自発分極、4)ヒステリシス特性等を単一液晶で全て満
足させることは困難であり、通常十数種類の混合液晶と
して調製される。When an "anti" ferroelectric liquid crystal is applied to a liquid crystal display, 1) operating temperature range, 2) response speed, 3).
It is difficult to satisfy all of spontaneous polarization and 4) hysteresis characteristics etc. with a single liquid crystal, and it is usually prepared as a dozen or more kinds of mixed liquid crystal.
【0024】現在、一般的に反強誘電性液晶材料として
知られている反強誘電性液晶化合物は応答速度の温度依
存性が大きいため、ディスプレイ表示した際に、表示む
ら等の欠点が生じる可能性があることが懸念されてい
る。At present, antiferroelectric liquid crystal compounds, which are generally known as antiferroelectric liquid crystal materials, have a large temperature dependence of the response speed, and may cause defects such as display unevenness when displayed on a display. There is concern that there is.
【0025】[0025]
【発明が解決しようとする課題】本発明の目的は、従来
知られている反強誘電性液晶化合物の主骨格を修飾する
ことにより、具体的には主骨格のフッ素修飾場所を適正
化することにより、安定な反強誘電性を示すことは当然
として、ディスプレイに充分使用できる応答速度の温度
依存性に優れた新規な反強誘電性液晶化合物を提供する
ことである。SUMMARY OF THE INVENTION An object of the present invention is to modify the main skeleton of a conventionally known antiferroelectric liquid crystal compound, specifically, to optimize the fluorine-modified site of the main skeleton. Accordingly, it is an object of the present invention to provide a novel antiferroelectric liquid crystal compound which exhibits a stable antiferroelectric property and is excellent in temperature dependency of a response speed which can be sufficiently used for a display.
【0026】[0026]
【課題を解決するための手段】本発明者らは、前記目的
を達成するために、具体的には、従来の反強誘電性液晶
化合物の主骨格をフッ素修飾場所を適正化した反強誘電
性液晶化合物の合成に関して鋭意研究を進めた結果、す
でに特願平7−334122号や特願平8−12656
2号の発明を完成している。本発明者らは、さらに詳細
な分子設計を行い、合成に関して鋭意努力を行った結
果、従来の反強誘電性液晶化合物よりも応答速度の温度
依存性に優れた反強誘電性液晶化合物を見出し、本発明
を完成するに至った。Means for Solving the Problems In order to achieve the above object, the present inventors have specifically proposed an antiferroelectric liquid crystal compound in which the main skeleton of a conventional antiferroelectric liquid crystal compound is modified with an appropriate fluorine modification site. As a result of diligent research on the synthesis of a crystalline liquid crystal compound, Japanese Patent Application Nos. 7-334122 and 8-12656 have already been published.
The invention of No. 2 has been completed. The present inventors have made further detailed molecular design and worked diligently on synthesis, and as a result, have found an antiferroelectric liquid crystal compound that has a higher temperature dependence of response speed than conventional antiferroelectric liquid crystal compounds. Thus, the present invention has been completed.
【0027】すなわち、本発明は、一般式That is, the present invention provides a compound represented by the general formula
【化2】 (式中、R1は炭素数6〜16のアルキル基であり、R2
は炭素数2〜10のアルキル基であり、CfはCH3ま
たはCF3であり、*は光学活性炭素を示す。)で表わ
される反強誘電性液晶化合物に関する。Embedded image (In the formula, R 1 is an alkyl group having 6 to 16 carbon atoms, R 2
Is an alkyl group having 2 to 10 carbon atoms, Cf is CH 3 or CF 3 , and * indicates an optically active carbon. )).
【0028】とりわけ、前記反強誘電性液晶化合物のな
かでも、下記式(A)Particularly, among the antiferroelectric liquid crystal compounds, the following formula (A)
【数2】 τI=log(τ10)/log(τ30) …(A) (式中、τ10;50V印加時10℃の応答速度。τ30;
50V印加時30℃の応答速度)で表わされるτI(応
答速度の温度依存性を示す指標)が1.7以下のものが
好ましい。ΤI = log (τ 10 ) / log (τ 30 ) (A) (where, τ 10 ; response speed at 10 ° C. when 50 V is applied; τ 30 ;
It is preferable that τI (index indicating the temperature dependency of the response speed) expressed by the response speed at 30 ° C. when a voltage of 50 V is applied is 1.7 or less.
【0029】本発明化合物の1例を列挙すると下記表の
とおりである。One example of the compound of the present invention is listed in the following table.
【表1】 [Table 1]
【0030】[0030]
【表2】 [Table 2]
【0031】以下に本発明化合物の合成方法の1例およ
びそのフローシートを以下に示す。1−ブロモ−4−デ
シルベンゼン(I)、マグネシウム、テトラヒドロフラ
ン(THF)から調製したグリニャール反応剤(II)
を、0℃でエチルトリクロロシランに加え、室温で撹拌
した。減圧下で溶媒のTHFと未反応のエチルトリクロ
ロシランを留去し、残渣にヘキサンを加え、グラスフィ
ルターでろ過した。ろ液を濃縮後、蒸留して、(4−デ
シルフェニル)ジクロロエチルシラン粗生成物(III)
を得た。無水フッ化カリウムのジメチルホルムアミド
(DMF)懸濁液に、0℃で、(4−デシルフェニル)
ジクロロエチルシラン粗生成物(III)のDMF溶液を
加え、60℃で撹拌した。これに、室温で、4−ブロモ
−2−フルオロ安息香酸メチル(IV)とジクロロビス
(トリイソプロピルホスフィン)パラジウムを加え、1
20℃で撹拌した。反応液に、飽和食塩水と酢酸エチル
を加え、セライトろ過し、ろ液を酢酸エチルで抽出、濃
縮した。残渣をシリカゲルカラムクロマトグラフィーで
精製し、4′−デシル−3−フルオロビフェニル−4−
カルボン酸メチル(V)を得た。4′−デシル−3−フ
ルオロビフェニル−4−カルボン酸メチル(V)のエタ
ノール溶液に室温で水酸化カリウム水溶液を加え、加熱
還流した。エタノールを減圧留去した後、反応液に2M
塩酸を加え、エーテル抽出後、濃縮した。残渣をヘキサ
ン/エーテル混合溶媒で再結晶し、4′−デシル−3−
フルオロビフェニル−4−カルボン酸(VI)を得た。An example of a method for synthesizing the compound of the present invention and a flow sheet thereof are shown below. Grignard reagent (II) prepared from 1-bromo-4-decylbenzene (I), magnesium, tetrahydrofuran (THF)
Was added to ethyltrichlorosilane at 0 ° C. and stirred at room temperature. The solvent, THF and unreacted ethyltrichlorosilane were distilled off under reduced pressure, hexane was added to the residue, and the mixture was filtered through a glass filter. The filtrate is concentrated and then distilled to obtain a crude product of (4-decylphenyl) dichloroethylsilane (III)
I got (4-decylphenyl) was added to a suspension of anhydrous potassium fluoride in dimethylformamide (DMF) at 0 ° C.
A DMF solution of the dichloroethylsilane crude product (III) was added, and the mixture was stirred at 60 ° C. To this, methyl 4-bromo-2-fluorobenzoate (IV) and dichlorobis (triisopropylphosphine) palladium were added at room temperature, and 1
Stirred at 20 ° C. A saturated saline solution and ethyl acetate were added to the reaction solution, and the mixture was filtered through celite. The filtrate was extracted with ethyl acetate and concentrated. The residue was purified by silica gel column chromatography, and 4'-decyl-3-fluorobiphenyl-4-
Methyl carboxylate (V) was obtained. An aqueous solution of potassium hydroxide was added to an ethanol solution of methyl 4'-decyl-3-fluorobiphenyl-4-carboxylate at room temperature, and the mixture was heated under reflux. After distilling off ethanol under reduced pressure, 2M
Hydrochloric acid was added, and the mixture was extracted with ether and concentrated. The residue was recrystallized from a mixed solvent of hexane / ether to give 4'-decyl-3-.
Fluorobiphenyl-4-carboxylic acid (VI) was obtained.
【0032】[0032]
【化3】 Embedded image
【0033】つぎに前記方法で作製した4′−デシル−
3−フルオロ−4−ビフェニルカルボン酸(VI)と塩化
チオニル等の塩素化剤とを反応させることにより、4′
−デシル−3−フルオロ−4−ビフェニルカルボン酸ク
ロリドを調製する。これに、従来の方法で調整した1−
(トリフルオロメチル)ペンチル 4−ヒドロキシベン
ゾエートをジクロロメタンを溶媒とし、トリエチルアミ
ン(以下TEAと略す)、ジメチルアミノピリジン(以
下DMAPと略す)を触媒として、窒素雰囲気下室温で
一晩以上反応させる。この反応溶液を塩酸溶液で洗浄
し、無水硫酸マグネシウムで脱水し、ジクロロメタンを
蒸留することにより、粗生成物を得る。この粗生成物を
ヘキサン/酢酸エチルの混合溶液でシリカゲルを用いて
分離精製し、4−{1−(トリフルオロメチル)ペンチ
ルオキシカルボニル}フェニル 4′−デシル−3−フ
ルオロビフェニル−4−カルボキシレートを得る。これ
は、エタノールを用いて更に精製することができる。ま
た、上記の粗生成物の分離精製、エステル合成および液
晶の再結晶は記載の方法以外にも公知の手法により代替
することができる。Next, the 4'-decyl-
By reacting 3-fluoro-4-biphenylcarboxylic acid (VI) with a chlorinating agent such as thionyl chloride, 4 ′
-Decyl-3-fluoro-4-biphenylcarboxylic acid chloride is prepared. In addition, 1-adjusted by the conventional method
(Trifluoromethyl) pentyl 4-hydroxybenzoate is reacted overnight at room temperature under a nitrogen atmosphere using dichloromethane as a solvent and triethylamine (hereinafter abbreviated as TEA) and dimethylaminopyridine (hereinafter abbreviated as DMAP) as catalysts. The reaction solution is washed with a hydrochloric acid solution, dried over anhydrous magnesium sulfate, and dichloromethane is distilled to obtain a crude product. The crude product was separated and purified using a mixed solution of hexane / ethyl acetate using silica gel, and 4- {1- (trifluoromethyl) pentyloxycarbonyl} phenyl 4′-decyl-3-fluorobiphenyl-4-carboxylate was obtained. Get. It can be further purified using ethanol. The separation and purification of the crude product, the synthesis of the ester, and the recrystallization of the liquid crystal can be replaced by known methods other than the methods described above.
【0034】以下に応答速度の測定方法について記述す
る。上記方法と同様に液晶物性測定セルをホットステー
ジにセットし、これを2枚の偏光板を直交させた光電子
倍増管付き偏光顕微鏡に無電界の状態で暗視野となるよ
うに配置した。セル中の液晶が反強誘電性相であるとき
に、セルに図5に示すような±50Vの矩形波を印加し
たときの光の相対透過率の変化から応答時間τを求める
ことができる。τは強誘電相の状態(マイナス側の矩形
波電圧終了時)から反強誘電相の状態を経由して次の強
誘電相の状態(プラス側の矩形波電圧印加により相対透
過率が90%に達したとき)になるまでの時間である。The method for measuring the response speed will be described below. In the same manner as in the above method, the liquid crystal property measurement cell was set on a hot stage, and this was placed in a polarizing microscope equipped with a photomultiplier tube in which two polarizing plates were orthogonal to each other so as to have a dark field without an electric field. When the liquid crystal in the cell is in the antiferroelectric phase, the response time τ can be determined from the change in the relative transmittance of light when a rectangular wave of ± 50 V as shown in FIG. 5 is applied to the cell. τ is the state of the ferroelectric phase (at the end of the rectangular wave voltage on the minus side), the state of the next ferroelectric phase via the state of the antiferroelectric phase (the relative transmittance is 90% by applying the rectangular wave voltage on the plus side). Is reached).
【0035】以下に本発明の実施例を示すが、本発明は
これにより限定されるものではない。Examples of the present invention will be described below, but the present invention is not limited by these examples.
【0036】実施例1 下記式で示される4−{1−(トリフルオロメチル)ペ
ンチルオキシカルボニル}フェニル 4′−デシル−3
−フルオロビフェニル−4−カルボキシレートの合成Example 1 4- {1- (trifluoromethyl) pentyloxycarbonyl} phenyl 4'-decyl-3 represented by the following formula:
Synthesis of -Fluorobiphenyl-4-carboxylate
【化4】 1−ブロモ−4−デシルベンゼン(2g,6.7mmo
l)、マグネシウム(220mg,9.0mmol)、
テトラヒドロフラン(THF)(12ml)から調製し
たグリニャール反応剤を、0℃でエチルトリクロロシラ
ン(2.3ml)に加え、室温で11時間撹拌した。減
圧下で溶媒のTHFと未反応のエチルトリクロロシラン
を留去し、残渣にヘキサンを加え、グラスフィルターで
ろ過した。ろ液を濃縮後、蒸留(130〜140℃/
0.1Torr)して、(4−デシルフェニル)ジクロ
ロエチルシラン粗生成物(1.85g,約80%)を得
た。無水フッ化カリウム(2g,34mmol)のジメ
チルホルムアミド(DMF)(5ml)懸濁液に、0℃
で、(4−デシルフェニル)ジクロロエチルシラン粗生
成物(1.8g)のDMF(3ml)溶液を加え、60
℃で6時間撹拌した。これに、室温で、4−ブロモ−2
−フルオロ安息香酸メチル(1.0g,4.6mmo
l)とジクロロビス(トリイソプロピルホスフィン)パ
ラジウム(60mg,0.09mmol)を加え、12
0℃で20時間撹拌した。反応液に、飽和食塩水と酢酸
エチルを加え、セライトろ過し、ろ液を酢酸エチルで抽
出、濃縮した。残渣をシリカゲルカラムクロマトグラフ
ィー(ヘキサン/酢酸エチル=20/1)で精製し、
4′−デシル−3−フルオロビフェニル−4−カルボン
酸メチル(1.15g,収率71%)を得た。4′−デ
シル−3−フルオロビフェニル−4−カルボン酸メチル
(1.3g,3.5mmol)のエタノール(70m
l)溶液に室温で水酸化カリウム水溶液(KOH 1
g,H2O 10ml)を加え、30分間加熱還流した。
エタノール約30mlを減圧留去した後、反応液に2M
塩酸を加え、エーテル抽出後、濃縮した。残渣をヘキサ
ン/エーテル(9/1)混合溶媒で再結晶し、4′−デ
シル−3−フルオロビフェニル−4−カルボン酸(1.
1g,88%)を得た。Embedded image 1-bromo-4-decylbenzene (2 g, 6.7 mmol
l), magnesium (220 mg, 9.0 mmol),
A Grignard reactant prepared from tetrahydrofuran (THF) (12 ml) was added to ethyltrichlorosilane (2.3 ml) at 0 ° C., and the mixture was stirred at room temperature for 11 hours. The solvent, THF and unreacted ethyltrichlorosilane were distilled off under reduced pressure, hexane was added to the residue, and the mixture was filtered through a glass filter. After concentration of the filtrate, distillation (130 to 140 ° C /
0.1 Torr) to obtain a crude product of (4-decylphenyl) dichloroethylsilane (1.85 g, about 80%). 0 ° C. was added to a suspension of anhydrous potassium fluoride (2 g, 34 mmol) in dimethylformamide (DMF) (5 ml).
Then, a solution of the crude product of (4-decylphenyl) dichloroethylsilane (1.8 g) in DMF (3 ml) was added, and
Stirred at C for 6 hours. To this, at room temperature, 4-bromo-2
-Methyl fluorobenzoate (1.0 g, 4.6 mmol
l) and dichlorobis (triisopropylphosphine) palladium (60 mg, 0.09 mmol), and 12
Stirred at 0 ° C. for 20 hours. A saturated saline solution and ethyl acetate were added to the reaction solution, and the mixture was filtered through celite. The filtrate was extracted with ethyl acetate and concentrated. The residue was purified by silica gel column chromatography (hexane / ethyl acetate = 20/1),
Methyl 4'-decyl-3-fluorobiphenyl-4-carboxylate (1.15 g, 71% yield) was obtained. Methyl 4'-decyl-3-fluorobiphenyl-4-carboxylate (1.3 g, 3.5 mmol) in ethanol (70 m
l) Add potassium hydroxide aqueous solution (KOH 1
g, H 2 O 10 ml) was added, and the mixture was heated under reflux for 30 minutes.
After about 30 ml of ethanol was distilled off under reduced pressure, 2 M
Hydrochloric acid was added, and the mixture was extracted with ether and concentrated. The residue was recrystallized from a mixed solvent of hexane / ether (9/1), and 4'-decyl-3-fluorobiphenyl-4-carboxylic acid (1.
1 g, 88%).
【0037】本化合物の同定資料は以下のとおりであ
る。1 H−NMR(CDCl3) δ 0.88(t,J=6.8Hz,3H),1.32
〜1.40(m,14H),1.65(broad q
uintet,J=7.5Hz,2H),2.66(b
road t,J=7.5Hz,2H),7.29
(d,J=8.2Hz,2H),7.40(dd,J=
12.2 and 1.6Hz,1H),7.47(d
d,J=8.1 and 1.6Hz,1H),7.5
4(d,J=8.2Hz,2H),8.09(t,J=
8.1Hz,1H),11.5(broad s,1
H)The identification data of the present compound are as follows. 1 H-NMR (CDCl 3 ) δ 0.88 (t, J = 6.8 Hz, 3H), 1.32
~ 1.40 (m, 14H), 1.65 (broad q
uintet, J = 7.5 Hz, 2H), 2.66 (b
load t, J = 7.5 Hz, 2H), 7.29
(D, J = 8.2 Hz, 2H), 7.40 (dd, J =
12.2 and 1.6 Hz, 1H), 7.47 (d
d, J = 8.1 and 1.6 Hz, 1H), 7.5
4 (d, J = 8.2 Hz, 2H), 8.09 (t, J =
8.1 Hz, 1 H), 11.5 (broad s, 1
H)
【0038】前記方法で調製した3−フルオロ−4′−
n−デシル−4−ビフェニルカルボン酸と塩化チオニル
等の塩素化剤とを反応させることにより、3−フルオロ
−4′−n−デシル−4−ビフェニルカルボン酸クロリ
ドを調製する。この3−フルオロ−4′−n−デシル−
4−ビフェニルカルボン酸クロリド0.27g(0.7
mmol)に、従来の方法で調製した1−(トリフルオ
ロメチル)ペンチル4−ヒドロキシベンゾエート0.2
0g(0.7mmol)を塩化メチレンを溶媒とし、T
EA0.07g(0.7mmol)、DMAP0.02
g(0.2mmol)を触媒として、窒素雰囲気下室温
で一晩以上反応させる。この反応溶液を塩酸溶液で洗浄
し、無水硫酸マグネシウムで脱水し、ジクロロメタンを
蒸留することにより、粗生成物を得る。この粗生成物を
ヘキサン/酢酸エチルの20/1(v/v)混合溶液で
シリカゲルを用いて分離精製し、4−{1−(トリフル
オロメチル)ペンチルオキシカルボニル}フェニル
4′−デシル−3−フルオロビフェニル−4−カルボキ
シレート0.39g(88%)を得る。これは、エタノ
ールを用いて更に精製することができる。The 3-fluoro-4'-prepared by the above method
By reacting n-decyl-4-biphenylcarboxylic acid with a chlorinating agent such as thionyl chloride, 3-fluoro-4'-n-decyl-4-biphenylcarboxylic acid chloride is prepared. This 3-fluoro-4'-n-decyl-
0.27 g of 4-biphenylcarboxylic acid chloride (0.7
mmol) to 1- (trifluoromethyl) pentyl 4-hydroxybenzoate 0.2 prepared by a conventional method.
0 g (0.7 mmol) using methylene chloride as a solvent and T
EA 0.07 g (0.7 mmol), DMAP 0.02
Using g (0.2 mmol) as a catalyst, the reaction is carried out at room temperature overnight or more in a nitrogen atmosphere. The reaction solution is washed with a hydrochloric acid solution, dried over anhydrous magnesium sulfate, and dichloromethane is distilled to obtain a crude product. This crude product was separated and purified using a 20/1 (v / v) mixed solution of hexane / ethyl acetate using silica gel, and 4- {1- (trifluoromethyl) pentyloxycarbonyl} phenyl
0.39 g (88%) of 4'-decyl-3-fluorobiphenyl-4-carboxylate is obtained. It can be further purified using ethanol.
【0039】本化合物の1H−NMR(CDCl3中、T
MS基準、δ値ppm)は 8.3〜7.1(m,11H),5.7〜5.5(m,
1H),2.8〜2.6(t,2H),2.1〜0.8
(m,28H)であった。 1 H-NMR of this compound (CDCl 3 , T
MS standard, δ value ppm) are 8.3 to 7.1 (m, 11H) and 5.7 to 5.5 (m, 11H).
1H), 2.8-2.6 (t, 2H), 2.1-0.8
(M, 28H).
【0040】前記化合物をポリイミドを塗布しラビング
処理を施した透明電極付ガラスからなる厚さ2μmのセ
ルに注入し、ホットステージ付偏光顕微鏡観察による相
転移温度を表3に示す。また、30℃、10℃における
応答速度および式(A)で表わされるτIも表3に示
す。The above compound was injected into a 2 μm-thick cell made of glass with a transparent electrode which had been coated with polyimide and subjected to rubbing treatment. The phase transition temperature as observed by a polarizing microscope equipped with a hot stage is shown in Table 3. Table 3 also shows the response speed at 30 ° C. and 10 ° C. and τI represented by the formula (A).
【0041】比較例1 4−{1−(トリフルオロメチル)ペンチルオキシカル
ボニル}フェニル4′−デシルビフェニル−4−カルボ
キシレートComparative Example 1 4- {1- (trifluoromethyl) pentyloxycarbonyl} phenyl 4'-decylbiphenyl-4-carboxylate
【化5】 また、上記化合物をポリイミドを塗布しラビング処理を
施した透明電極付ガラスからなる厚さ2μmのセルに注
入し、ホットステージ付偏光顕微鏡観察により測定され
た相転移温度を表3に示す。また、30℃、10℃にお
ける応答速度および式(A)で表わされるτIも表3に
示す。Embedded image In addition, the above compound was injected into a 2 μm-thick cell made of glass with a transparent electrode which had been coated with polyimide and rubbed, and the phase transition temperature measured by observation with a polarizing microscope equipped with a hot stage is shown in Table 3. Table 3 also shows the response speed at 30 ° C. and 10 ° C. and τI represented by the formula (A).
【0042】[0042]
【表3】 [Table 3]
【0043】以下に本発明の実施態様項を列記する。 (1)一般式The embodiments of the present invention are listed below. (1) General formula
【化6】 (式中、R1は炭素数6〜16のアルキル基であり、R2
は炭素数2〜10のアルキル基であり、CfはCH3ま
たはCF3であり、*は光学活性炭素を示す。)で表わ
される反強誘電性液晶化合物。 (2)下記式(A)Embedded image (In the formula, R 1 is an alkyl group having 6 to 16 carbon atoms, R 2
Is an alkyl group having 2 to 10 carbon atoms, Cf is CH 3 or CF 3 , and * indicates an optically active carbon. An antiferroelectric liquid crystal compound represented by the formula: (2) The following formula (A)
【数3】 τI=log(τ10)/log(τ30) …(A) (式中、τ10;50V印加時10℃の応答速度。τ30;
50V印加時30℃の応答速度)で表わされるτI(応
答速度の温度依存性を示す指標)が1.7以下である前
項(1)記載の反強誘電性液晶化合物。ΤI = log (τ 10 ) / log (τ 30 ) (A) (where, τ 10 ; response speed at 10 ° C. when 50 V is applied. Τ 30 ;
The antiferroelectric liquid crystal compound according to the above item (1), wherein τI (index indicating the temperature dependence of the response speed) represented by the response speed at 30 ° C. when 50 V is applied is 1.7 or less.
【0044】[0044]
【効果】従来の反強誘電性液晶化合物の主骨格のフッ素
修飾場所の適性化をしたことにより、室温付近および低
温領域において安定な反強誘電性を示し、高速応答かつ
応答速度の温度依存性の小さな反強誘電性液晶化合物を
提供することができた。具体的には、実施例1と比較例
1を比較すると、 1)10℃の応答速度が約73%も高速化した。 2)τIも約5%改善できた。[Effect] By optimizing the location of fluorine modification of the main skeleton of the conventional antiferroelectric liquid crystal compound, it shows stable antiferroelectricity near room temperature and low temperature range, and has fast response and temperature dependence of response speed. Can be provided. Specifically, comparing Example 1 with Comparative Example 1, 1) The response speed at 10 ° C. was increased by about 73%. 2) τI was also improved by about 5%.
【図1】(A)は印加される三角波を、(B)は市販の
ネマチック液晶の、(C)は二状態液晶の、(D)は三
安定状態液晶の、それぞれの光学応答特性を示す。1 (A) shows an applied triangular wave, (B) shows a commercially available nematic liquid crystal, (C) shows a two-state liquid crystal, and (D) shows a tristable state liquid crystal. .
【図2】クラーク/ラガバァルにより提案された強誘電
性液晶分子の二つの安定した配向状態を示す。FIG. 2 shows two stable alignment states of ferroelectric liquid crystal molecules proposed by Clark / Ragaval.
【図3】(A)は、本発明の“反”強誘電性液晶分子の
三つの安定した配向状態を示し、(B)は、Aの各
(a)、(b)、(c)に対応した三状態スイッチング
と液晶分子配列の変化を示す。FIG. 3 (A) shows three stable alignment states of the “anti” ferroelectric liquid crystal molecules of the present invention, and (B) shows each of (A), (b) and (c) of A. The corresponding three-state switching and the change of the liquid crystal molecule arrangement are shown.
【図4】“反”強誘電性液晶分子が印加電圧に対してダ
ブルヒステリシスを描いて光透過率が変化することを示
す印加電圧−光透過率特性図である。FIG. 4 is an applied voltage-light transmittance characteristic diagram showing that the “anti” ferroelectric liquid crystal molecules change their light transmittance by drawing a double hysteresis with respect to an applied voltage.
【図5】(A)は印加電圧と時間の関係を示し、(B)
はその印加電圧がかかったときの液晶分子の応答状態を
示すグラフである。FIG. 5A shows a relationship between applied voltage and time, and FIG.
Is a graph showing a response state of liquid crystal molecules when the applied voltage is applied.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 楠本 哲生 神奈川県相模原市南台1−9−2−102 (72)発明者 萩原 恵美子 神奈川県相模原市南台1−9−1−302 (72)発明者 檜山 爲次郎 神奈川県相模原市上鶴間4−29−3−101 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Tetsuo Kusumoto 1-9-1-102, Minamidai, Sagamihara-shi, Kanagawa (72) Inventor Emiko Hagiwara 1-9-1-302, Minamidai, Sagamihara-shi, Kanagawa (72) Inventor Tanijiro Hiyama 4-29-3-101 Kamizuruma, Sagamihara City, Kanagawa Prefecture
Claims (2)
は炭素数2〜10のアルキル基であり、CfはCH3ま
たはCF3であり、*は光学活性炭素を示す。)で表わ
される反強誘電性液晶化合物。1. A compound of the general formula (In the formula, R 1 is an alkyl group having 6 to 16 carbon atoms, R 2
Is an alkyl group having 2 to 10 carbon atoms, Cf is CH 3 or CF 3 , and * indicates an optically active carbon. An antiferroelectric liquid crystal compound represented by the formula:
50V印加時30℃の応答速度)で表わされるτI(応
答速度の温度依存性を示す指標)が1.7以下である請
求項1記載の反強誘電性液晶化合物。2. The following equation (A): τI = log (τ 10 ) / log (τ 30 ) (A) (where, τ 10 ; response speed at 10 ° C. when 50 V is applied; τ 30 ;
2. The antiferroelectric liquid crystal compound according to claim 1, wherein τI (index indicating the temperature dependence of the response speed) expressed by a response speed at 30 ° C. when a voltage of 50 V is applied is 1.7 or less.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8320943A JPH10147553A (en) | 1996-11-15 | 1996-11-15 | Liquid crystal compound excellent in dependence of response speed on temperature and having stable antiferroelectric phase |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8320943A JPH10147553A (en) | 1996-11-15 | 1996-11-15 | Liquid crystal compound excellent in dependence of response speed on temperature and having stable antiferroelectric phase |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH10147553A true JPH10147553A (en) | 1998-06-02 |
Family
ID=18127024
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8320943A Pending JPH10147553A (en) | 1996-11-15 | 1996-11-15 | Liquid crystal compound excellent in dependence of response speed on temperature and having stable antiferroelectric phase |
Country Status (1)
Country | Link |
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JP (1) | JPH10147553A (en) |
-
1996
- 1996-11-15 JP JP8320943A patent/JPH10147553A/en active Pending
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