JPH10135815A - Semiconductor integrated circuit - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve noise immunity of the semiconductor integrated circuit at a low temperature. SOLUTION: The integrated circuit device is provided with a temperature sensing circuit 16 that senses ambient temperature and provides an output of a signal different between high and low temperatures, a 1st output circuit 18 used when the ambient temperature is high, a 2nd output circuit 19 whose current supply capability is smaller than that of the 1st output circuit 18 and that is used when the ambient temperature is low, and an output circuit selection circuit 17 whose operation is controlled by the temperature sensing circuit 16 and that selects the 1st output circuit 18 or the 2nd output circuit 19. Since the 2nd output circuit 19 whose current supply capability is small at a low temperature, a problem that power noise is increased at a low temperature more than that at a high temperature is prevented.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor integrated device, and more particularly to an output section and an input section of a semiconductor memory device (hereinafter, referred to as "semiconductor memory") which guarantees operation in a wide temperature range.

[0002]

2. Description of the Related Art Generally, each semiconductor memory has a specified operation guarantee temperature. Some of the semiconductor memories guarantee operation in a wide temperature range, for example, from -40 degrees Celsius to 85 degrees Celsius. In a semiconductor memory that guarantees operation in a wide temperature range, the problem that the input unit malfunctions due to power supply noise generated in the output unit becomes serious as described later.

FIG. 8 shows an example of a conventional output section in a semiconductor memory. 8, 7 and 8 are P-channel transistors, 9 and 10 are N-channel transistors, 15 is an output terminal, 14 is a first internal circuit, and 51 is called a conventional output circuit.

[0004] The circuit operation of FIG. 8 will be described. The conventional output circuit 5 receives data output from the first internal circuit 14 and receives the data.
1 sends high level (hereinafter, referred to as “H”) or low level (hereinafter, referred to as “L”) data to the output terminal 15. Generally, in order to transfer data from the conventional output circuit 51 to the output terminal 15 at high speed, the current driving capability of the conventional output circuit 51 is set to be large. Here, when the output of the conventional output circuit 51 suddenly changes from H to L or vice versa, a large current flows instantaneously in the circuit, and power supply noise is generated due to the influence of the resistance and inductance of the power supply wiring. When the temperature is low, the time variation of the large current is large as compared with the high temperature, and the power noise is further increased due to the influence of the resistance and inductance of the power wiring. The power supply noise can be reduced by reducing the current driving capability of the conventional output circuit 51. However, if the current driving capability is reduced, the access time becomes longer.

Next, FIG. 9 shows an example of a conventional input section in a semiconductor memory. In FIG. 9, 24 is a P-channel transistor, 25 is an N-channel transistor, 30 is an input terminal, 38 is a second internal circuit, and 31 is called a first input circuit.

The operation of the circuit shown in FIG. 9 will be described. Input terminal 30
Receiving the input signal supplied to the first input circuit 31
Alternatively, L data is output and the data is output to the second internal circuit 3
8 The first input circuit 31 has a determination level (hereinafter, referred to as “logic level”) for determining whether the input signal is at a high level or a low level, and compares the logic level with the input signal supplied to the input terminal 30. The output data to the second internal circuit 38 is determined. Here, for example, when the potential of a wiring for supplying a certain reference potential becomes higher than the reference potential for a certain period due to the effect of a large current flowing through the conventional output circuit 51 in FIG. On the other hand, a state in which the potential of the wiring supplying the reference potential is lower than the reference potential for a certain period due to the effect of the large current is referred to as a "low potential noise occurrence state". ), The logic level of the first input circuit 31 moves in a higher direction. Therefore, even when H data is input to the input terminal 30, the first input circuit 3
1 may mistakenly recognize it as L data. As described above, the power supply noise at the low temperature is larger than that at the high temperature, so that the logic level of the first input circuit 31 fluctuates much more and the risk of erroneous recognition of the input signal increases.

[0007]

As described above, in the conventional output circuit, there is a problem that the power supply noise is larger at low temperatures than at high temperatures. At low temperatures, the power supply noise increases, so the logic level fluctuates further,
There has been a problem that a malfunction such as erroneous recognition of an input signal is likely to occur.

An object of the present invention is to solve the above-mentioned problem, and it is an object of the present invention to improve a low-temperature noise withstand voltage in a semiconductor integrated device.

[0009]

According to a first aspect of the present invention, in a semiconductor integrated device having an output circuit, a temperature detecting circuit for detecting an ambient temperature, and the detected ambient temperature is a predetermined value. A high-temperature output circuit selected when the temperature is higher than a temperature, a low-temperature output circuit selected when the detected ambient temperature is lower than a predetermined temperature, and a detection signal output from the temperature detection circuit. And an output circuit selecting circuit for selecting the high-temperature output circuit or the low-temperature output circuit, and an output is made from the output circuit selected according to the ambient temperature.

With such a configuration, the present invention uses an output circuit having a smaller current supply capability at low temperatures than at high temperatures, so that it is possible to prevent a problem that power supply noise increases at low temperatures as compared with high temperatures.

A semiconductor integrated device according to a second aspect of the present invention is different from the semiconductor integrated device according to the first aspect in that the driving capability of the high-temperature output circuit is different from the driving capability of the low-temperature output circuit.

According to a sixth aspect of the present invention, in the semiconductor integrated device according to the second aspect, the driving capability is a current driving capability.

According to the above construction, the first, second or sixth aspect of the present invention is provided.
Since the present invention uses an output circuit having a lower current supply capability at low temperatures than at high temperatures, it is possible to prevent a problem that power supply noise increases at low temperatures as compared with high temperatures.

According to a third aspect of the present invention, in a semiconductor integrated device having an input circuit, a temperature detecting circuit for detecting an ambient temperature is provided when the detected ambient temperature is higher than a predetermined temperature. A high-temperature input circuit selected, a low-temperature input circuit selected when the detected ambient temperature is lower than a predetermined temperature, and the high-temperature input circuit based on a detection signal output by the temperature detection circuit. Alternatively, an input circuit selection circuit for selecting the low-temperature input circuit is provided, and a signal is input to an input circuit selected according to the ambient temperature.

According to a fourth aspect of the present invention, in the semiconductor integrated device according to the third aspect, the judgment level of the input circuit for high temperature is different from the judgment level of the input circuit for low temperature.

With this configuration, the present invention according to claims 3 and 4 can use an input circuit whose logic level is changed at a low temperature compared to a high temperature. If the effect of high-potential noise is a concern, lower the logic level of the input circuit used at low temperatures.If you are concerned about the effect of low-potential noise, set the logic level of the input circuit to be used at low temperatures higher. Erroneous recognition of the input signal caused by the power supply noise in the first embodiment.

According to a fifth aspect of the present invention, there is provided a semiconductor integrated device, comprising: a temperature detecting circuit for detecting an ambient temperature; an output circuit for high temperature selected when the detected ambient temperature is higher than a predetermined temperature; A low-temperature output circuit selected when the detected ambient temperature is lower than a predetermined temperature; and selecting the high-temperature output circuit or the low-temperature output circuit based on a detection signal output by the temperature detection circuit. An output circuit selection circuit, a high temperature input circuit selected when the detected ambient temperature is higher than a predetermined temperature, and a low temperature input circuit selected when the detected ambient temperature is lower than a predetermined temperature An input circuit, comprising: an input circuit selection circuit that selects the high-temperature input circuit or the low-temperature input circuit based on a detection signal output by the temperature detection circuit, and an input circuit selected according to the ambient temperature. Signal input is made, the signal output is made from the output circuit selected according to the ambient temperature.

With this configuration, according to the present invention, for example, when power supply noise remains even after the increase in power supply noise is suppressed at a low temperature, malfunction is prevented by using an input circuit with a changed logic level when power supply noise remains. Therefore, the power supply noise withstand voltage is further increased as compared with the configuration using only one of them, and the reliability of the device is further improved.

[0019]

DESCRIPTION OF THE PREFERRED EMBODIMENTS A semiconductor integrated device according to the present invention will be described with reference to the drawings.

FIG. 1 shows an example of an output unit according to a first embodiment of the semiconductor integrated device of the present invention. In FIG. 1, 1 is a diffusion resistance, 2 is a polysilicon resistance, 12 is an N-channel transistor, 11 is a P-channel transistor, 3, 4,.
5, 6, and 13 are inverter circuits, and 20, 22 are NAND circuits.
Circuits, 21 and 23 are NOR circuits, 16 is a temperature detection circuit, 17 is an output circuit selection circuit, 18 is a first output circuit, and 19 is a second output circuit. In FIG. 1, elements having the same reference numerals as those in FIG. 8 showing the conventional example are the same as those in FIG. The new elements in FIG. 1 will be described below.

The temperature detecting circuit 16 shown in FIG. 1 has a function of detecting the ambient temperature and outputting different data at a high temperature and at a low temperature. Here, the temperature dependence of the diffusion resistance 1 and the polysilicon resistance 2 is shown in FIG. The resistance value of the diffusion resistor 1 decreases as the temperature decreases, whereas the resistance value of the polysilicon resistor 2 hardly changes with temperature. Using the characteristics of FIG. 6, the values of the diffusion resistance 1 and the polysilicon resistance 2 are changed so that the output of the inverter 5 of FIG. Set. In FIG. 1, the temperature detection circuit 16
Is constituted by the diffused resistor 1 and the polysilicon resistor 2, but the same function can be provided by other resistive elements such as transistors and diodes.

The output circuit selection circuit 17 shown in FIG.
8 has a function of sending a signal from the first internal circuit 14 to the second output circuit 19 when the temperature is low.

The first output circuit 18 shown in FIG. 1 is an output circuit selectively used at a high temperature, and includes transistors 7, 8, 9, 10
It is constituted by. Here, the first output circuit 18
Has the same current driving capability as that of the conventional output circuit 51 of FIG.

The second output circuit 19 in FIG. 1 is an output circuit selectively used at a low temperature. Reference numerals 11 and 12 in FIG. 1 are the same as reference numerals 7 and 9 showing the first input circuit 18. Therefore, the second output circuit 19 is connected to the first output circuit 1
8, the current driving capability is made smaller. However, a method for reducing the current driving capability of the second output circuit 19 is as follows.
The method is not limited to the method of changing the number of transistors shown in FIG. 1, but may be another method such as changing the threshold voltage of the transistor.

Next, the operation of the circuit shown in FIG. 1 will be described. When the ambient temperature is higher than Tc, the temperature detection circuit 16 detects the high temperature state and sends H data to the output circuit selection circuit 17. As a result, the NAND circuit 22 outputs H and the NOR circuit 23 outputs L, so that the transistors 11 and 12 are turned off. At this time, when an H or L signal is sent from the first internal circuit 14 to the NAND circuit 20 and the NOR circuit 21 via the inverter 13, H or L data is output from the first output circuit 18 to the output terminal 15. Sent. Since the current driving capability of the first output circuit 18 is equivalent to that of the conventional output circuit 51 of FIG. 8, the operation at high temperature is the same as that of FIG.

On the other hand, when the ambient temperature is lower than Tc, the temperature detecting circuit 16 detects a low temperature state and sends L data to the output circuit selecting circuit 17. As a result, the NAND circuit 20
And the NOR circuit 21 outputs L, so that the transistors 7, 8, 9, and 10 are turned off. At this time, when an H or L signal is sent from the first internal circuit 14 to the NAND circuit 22 and the NOR circuit 23 via the inverter 13, the H or L signal is sent from the second output circuit 19 to the output terminal 15.
Is sent.

Here, the data at the output terminal 15 changes from H to L
Or conversely, when power supply noise occurs due to a sudden change,
In the case of the circuit of FIG. 8 showing a conventional example, as described above, a larger power supply noise occurs at low temperatures than at high temperatures. On the other hand, in the case of the circuit of FIG. 1 showing the present invention, since the second output circuit 19 having a small current driving capability is used at a low temperature,
The problem that power supply noise increases at low temperatures can be prevented.

FIG. 4 shows another example of the first embodiment of the present invention. In FIG. 4, 41 is a P-channel transistor,
42 and 45 are N-channel transistors, 43 is a NAND
The circuit 44 is an inverter circuit.

The operation of the circuit shown in FIG. 4 will be described. Ambient temperature is T
When the temperature is higher than c, the temperature detection circuit 16 detects the high temperature state and sends H data to the NAND circuit 43. When the gate input of the transistor 42 becomes H in this state, the NAND
Since the circuit 43 outputs L, the transistor 45 is turned on, and the ground potential is supplied to the output terminal 15. On the other hand, when the ambient temperature is lower than Tc, the temperature detection circuit 16 detects a low temperature state and sends L data to the NAND circuit 43. As a result, the NAND circuit 43 outputs H, so that the transistor 45 is turned off. Therefore, when the ambient temperature is lower than Tc, the supply capability of the ground potential is lower than when the ambient temperature is higher than Tc. That is, in the circuit of FIG.
The output circuit composed of 45 plays the same role as the first output circuit 18 in FIG. 1, the output circuit composed of the transistors 41 and 42 plays the same role as the second output circuit 19 in FIG. The circuit 43 and the inverter circuit 44 play the same role as the output circuit selection circuit 17 in FIG.

Here, the data at the output terminal 15 changes from H to L
Or conversely, when power supply noise occurs due to a sudden change,
At a low temperature, the transistor 45 is turned off to reduce the current driving capability of the output circuit, thereby preventing a problem that power supply noise increases at a low temperature. The circuit of FIG. 4 can realize the same function as the circuit of FIG. 1 with a small number of elements.

In the present invention, since the current driving capability of the output circuit is made smaller at low temperatures than at high temperatures, there is a concern that the access time may be delayed. So fast
Even if the current driving capability of the output circuit is reduced, the access time does not become slower than at high temperatures.

FIG. 2 shows an example of the input unit according to the second embodiment of the present invention. 26, 28, 35, 37 in FIG.
Is a P-channel transistor; 27, 34, and 36 are N-channel transistors; 29 is an inverter circuit;
Are referred to as a second input circuit, and 33 is referred to as an input circuit selection circuit. In FIG. 2, elements having the same reference numerals as in FIG. 9 showing the conventional example are the same as those in FIG. 9, and the temperature detecting circuit 16 is the same as in FIG. The new elements in FIG. 2 will be described below.

The input circuit control circuit 33 shown in FIG.
1 has a function of sending a signal from the second input circuit 32 to the second internal circuit 38 when the temperature is low.

The second input circuit 32 shown in FIG. 2 is an input circuit selectively used at a low temperature. Since the second input circuit 32 has the P-channel transistor 28 for supplying the power supply potential, the logic level is higher than that of the first input circuit 31. However, when H data is input to the input terminal 30, the logic level is raised within a range in which the second input circuit 32 does not mistakenly recognize it as L data. The method of changing the logic levels of the first input circuit 31 and the second input circuit 32 is not limited to the method of adding the transistor shown in FIG. 2, but may be, for example, changing the threshold voltage of the transistor. Method is also acceptable.

Next, the operation of the circuit shown in FIG. 2 will be described. When the ambient temperature is higher than Tc, the temperature detection circuit 16 detects the high temperature state and sends H data to the input circuit selection circuit 33. As a result, in the input circuit selection circuit 33, 34 and 35 are turned on, and 36 and 37 are turned off, so that the first input circuit 31 and the second internal circuit 38 are connected. At this time, the first input circuit 31 and the second input circuit 32 output certain data in response to a signal from the input terminal 30.
Only the data from the first input circuit 31 is sent to the second internal circuit 38. That is, at a high temperature, the same operation as that of the conventional circuit shown in FIG. 9 is performed. On the other hand, when the ambient temperature is lower than Tc, the temperature detection circuit 16 detects a low temperature state and sends L data to the input circuit selection circuit 33. As a result, in the input circuit selection circuit 33, 34 and 35 are turned off,
Since the switches 36 and 37 are turned on, the second input circuit 32 and the second internal circuit 38 are connected. At this time, the first input circuit 31 and the second input circuit 32 output certain data in response to the signal from the input terminal 30, but the second internal circuit 38 outputs only the data from the second input circuit 32. Is sent.

Here, when low-potential noise is generated in the power supply line while the input section of FIG. 2 is operating, the first input circuit 3
The logic levels of the first and second input circuits 32 change in a lower direction. As described above, the power supply noise is greater at low temperatures than at high temperatures, so the logic level drop is more severe at low temperatures. At this time, L
Even when data is input, an erroneous operation of erroneously recognizing it as H data is likely to occur. However, when the temperature is low, the second input circuit 32 whose logic level is set high in advance is used, so that the logic level can be prevented from lowering as a result. Therefore, input terminal 3
The malfunction of erroneously recognizing the input signal given to 0 can be suppressed.

FIG. 3 shows another example of the input unit according to the second embodiment of the present invention. In FIG. 3, reference numeral 39 denotes an N-channel transistor, and reference numeral 40 denotes a third input circuit. In FIG. 3, elements having the same reference numerals as those in FIG. 2 are the same as those in FIG. The new elements in FIG. 3 will be described below.

The third input circuit 40 shown in FIG. 3 is an input circuit selectively used at a low temperature. Since the third input circuit 40 has the N-channel transistor 39 for supplying the ground potential, the logic level is lower than that of the first input circuit 31. However, when L data is input to the input terminal 30, the logic level is kept low within a range where the third input circuit 40 does not mistakenly recognize it as H data. The method for changing the logic levels of the first input circuit 31 and the third input circuit 40 is not limited to the method of adding the transistor shown in FIG. 3, but may be, for example, changing the threshold voltage of the transistor. Method is also acceptable.

Next, the operation of the circuit shown in FIG. 3 will be described. When the ambient temperature is higher than Tc, the temperature detection circuit 16 detects the high temperature state and sends H data to the input circuit selection circuit 33. As a result, in the input circuit selection circuit 33, 34 and 35 are turned on, and 36 and 37 are turned off, so that the first input circuit 31 and the second internal circuit 38 are connected. At this time, the first input circuit 31 and the third input circuit 40 receive a signal from the input terminal 30 and output certain data.
Only the data from the first input circuit 31 is sent to the second internal circuit 38. That is, at a high temperature, the same operation as that of the conventional circuit shown in FIG. 9 is performed. On the other hand, when the ambient temperature is lower than Tc, the temperature detection circuit 16 detects a low temperature state and sends L data to the input circuit selection circuit 33. As a result, in the input circuit selection circuit 33, 34 and 35 are turned off,
Since the switches 36 and 37 are turned on, the third input circuit 40 and the second internal circuit 38 are connected. At this time, the first input circuit 31 and the third input circuit 40 output certain data in response to a signal from the input terminal 30, but the second internal circuit 38 outputs only data from the third input circuit 40. Is sent.

Here, when high potential noise is generated in the power supply line while the input section of FIG. 3 is operating, the first input circuit 3
The logic levels of the first and third input circuits 40 change in a lower direction. As described above, the power supply noise is greater at low temperatures than at high temperatures, so that the logic level rises more severely at low temperatures. At this time, H
Even when data is input, a malfunction of erroneously recognizing it as L data is likely to occur. However, when the temperature is low, since the third input circuit 40 in which the logic level is set low in advance is used, it is possible to prevent the logic level from rising as a result. Therefore, input terminal 3
The malfunction of erroneously recognizing the input signal given to 0 can be suppressed.

FIG. 5 shows another example of the second embodiment of the present invention. In FIG. 5, 46 is a P-channel transistor,
47, 49 and 50 are N-channel transistors, and 48 is an inverter circuit.

The operation of the circuit shown in FIG. 5 will be described. Ambient temperature is T
When the temperature is higher than c, the temperature detection circuit 16 detects the high temperature state and sends H data to the inverter circuit 48. As a result, the inverter circuit 48 outputs L, so that the transistor 49
Is turned off. Therefore, even if transistor 50 is turned on, it cannot supply the second internal circuit 38 with the ground potential. On the other hand, when the ambient temperature is lower than Tc, the temperature detection circuit 16 detects a low temperature state and sends L data to the inverter circuit 48. As a result, the inverter circuit 48 outputs H, so that the transistor 49 is turned on. When the transistor 50 is turned on in this state, the ground potential is supplied to the second internal circuit 38. Therefore, when the ambient temperature is lower than Tc, the transistor 50 is added as compared with when the ambient temperature is higher than Tc. As a result, the logic level is lower than that of the input circuit including the transistors 46 and 47. That is, the input circuit composed of the transistors 46 and 47 plays the same role as the first input circuit 31 in FIG.
The input circuit constituted by the transistors 46, 47 and 50 plays the same role as the third input circuit 40 in FIG. 3, and the inverter circuit 48 and the transistor 49 play the same role as the input circuit selection circuit 33. .

Here, when high potential noise is generated in the power supply line when the input section of FIG. 5 is operating, an input circuit in which the logic level is previously set lower at low temperatures than at high temperatures, specifically, a transistor 46 is used. , 47, and 50, the logic level can be prevented from rising as a result. Therefore, the input terminal 30
Erroneous recognition of the input signal given to The circuit of FIG. 5 can realize the same function as the circuit of FIG. 3 with a small number of elements.

Further, the third semiconductor integrated device of the present invention comprises:
A configuration in which the first and second semiconductor integrated devices of the present invention are combined, that is, a configuration in which FIGS. 1 and 2 or FIGS. 1 and 3 are combined. According to the third semiconductor integrated device of the present invention, the logic level is changed by the circuit of FIG. 2 or 3 even when the power supply noise remains even after the increase of the power supply noise is suppressed by the circuit of FIG. The malfunction can be prevented by using the input circuit. Therefore, a circuit that is more resistant to power supply noise than when the first semiconductor integrated device of the present invention or the second semiconductor integrated device of the present invention is used alone can be realized.

[0045]

As described above, according to the present invention,
Since an output circuit having a smaller current supply capability is used at a low temperature than at a high temperature, a problem that power supply noise increases at a low temperature can be prevented. On the other hand, according to the present invention,
At low temperatures, an input circuit whose logic level is changed as compared with that at high temperatures can be used. If you are concerned about the effects of high-potential noise, lower the logic level of the input circuit used at low temperatures.If you are concerned about the effects of low-potential noise, set the logic level of the input circuit used at low temperatures higher to reduce power supply noise. It is possible to reduce erroneous operation of erroneous recognition of the input signal due to the erroneous operation.

According to the semiconductor integrated device of the present invention,
For example, it is possible to prevent malfunction by using the input circuit whose logic level is changed by the circuit of FIG. 2 or 3 when the power supply noise remains even after the increase in power supply noise is suppressed by the circuit of FIG. 1 at a low temperature. Therefore, the power supply noise withstand voltage is further increased as compared with the configuration using only one of them, and the reliability of the device is further improved.

As described above, according to the present invention, a semiconductor integrated device with improved noise withstand voltage during low-temperature operation can be realized.

[Brief description of the drawings]

FIG. 1 is a diagram showing an example of an output unit which is a first semiconductor integrated device of the present invention.

FIG. 2 is a diagram showing an example of an input unit which is a second semiconductor integrated device of the present invention.

FIG. 3 is a diagram showing another example of the input unit which is the second semiconductor integrated device of the present invention.

FIG. 4 is a diagram showing another example of the first semiconductor integrated device of the present invention.

FIG. 5 is a diagram showing another example of the second semiconductor integrated device of the present invention.

FIG. 6 is a diagram showing the relationship between diffusion resistance and polysilicon resistance and temperature.

FIG. 7 is an operation diagram of a temperature detection circuit according to the present invention.

FIG. 8 is a diagram showing an example of an output unit which is a conventional semiconductor integrated device.

FIG. 9 is a diagram showing an example of an input unit which is a conventional semiconductor integrated device.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Diffusion resistance 2 ... Polysilicon resistance 3,4,5,6,13,29,44,48 ... Inverter circuit 7,8,11,24,26,28,35,37,41 ,
46... P-channel transistors 9, 10, 12, 25, 27, 34, 36, 39, 4
2, 45, 47, 49, 50 N channel transistor 14 First internal circuit 15 Output terminal 16 Temperature detection circuit 17 Output circuit selection circuit 18 1 output circuit 19 ... second output circuit 31 ... first input circuit 32 ... second input circuit 33 ... input circuit selection circuit 20,22,43 ... NAND circuit 21 , 23 ... NOR circuit 30 ... input terminal 38 ... second internal circuit 40 ... third input circuit 51 ... conventional output circuit

Claims (6)

[Claims] 1. A semiconductor integrated device having an output circuit, comprising: a temperature detection circuit for detecting an ambient temperature; an output circuit for high temperature selected when the detected ambient temperature is higher than a predetermined temperature; A low-temperature output circuit that is selected when the detected ambient temperature is lower than a predetermined temperature, and an output circuit that selects the high-temperature output circuit or the low-temperature output circuit based on a detection signal output by the temperature detection circuit. A semiconductor integrated device, comprising: a selection circuit; and an output from an output circuit selected according to the ambient temperature. 2. The semiconductor integrated device according to claim 1, wherein
A semiconductor integrated device, wherein the driving capability of the high-temperature output circuit is different from the driving capability of the low-temperature output circuit. 3. A semiconductor integrated device having an input circuit, a temperature detection circuit for detecting an ambient temperature, an input circuit for high temperature selected when the detected ambient temperature is higher than a predetermined temperature, and A low-temperature input circuit selected when the detected ambient temperature is lower than a predetermined temperature, and an input circuit that selects the high-temperature input circuit or the low-temperature input circuit based on a detection signal output by the temperature detection circuit. A semiconductor integrated device comprising: a selection circuit; and a signal input to an input circuit selected according to the ambient temperature. 4. The semiconductor integrated device according to claim 3, wherein
A semiconductor integrated device, wherein a judgment level of the high-temperature input circuit is different from a judgment level of the low-temperature input circuit. 5. A temperature detecting circuit for detecting an ambient temperature; an output circuit for high temperature selected when the detected ambient temperature is higher than a predetermined temperature; A low-temperature output circuit selected when the temperature is low, an output circuit selection circuit that selects the high-temperature output circuit or the low-temperature output circuit based on a detection signal output by the temperature detection circuit, and the detected surroundings. A high-temperature input circuit selected when the temperature is higher than a predetermined temperature; a low-temperature input circuit selected when the detected ambient temperature is lower than the predetermined temperature; and an output from the temperature detection circuit. An input circuit selection circuit that selects the high-temperature input circuit or the low-temperature input circuit based on a detection signal, wherein a signal is input to an input circuit selected in accordance with the ambient temperature, and in accordance with the ambient temperature. The semiconductor integrated device, characterized in that the signal output is performed from-option output circuit. 6. The semiconductor integrated device according to claim 2, wherein
The semiconductor integrated device, wherein the driving capability is a current driving capability.