JPH10121256A - Electroless plating method and device - Google Patents

Electroless plating method and device

Info

Publication number
JPH10121256A
JPH10121256A JP4348397A JP4348397A JPH10121256A JP H10121256 A JPH10121256 A JP H10121256A JP 4348397 A JP4348397 A JP 4348397A JP 4348397 A JP4348397 A JP 4348397A JP H10121256 A JPH10121256 A JP H10121256A
Authority
JP
Japan
Prior art keywords
electroless plating
plating bath
pressure
electroless
bath
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4348397A
Other languages
Japanese (ja)
Inventor
Takenori Nakayama
武典 中山
Atsushi Kato
淳 加藤
Wataru Urushibara
亘 漆原
Motoharu Sato
元治 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kobe Steel Ltd
Original Assignee
Kobe Steel Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kobe Steel Ltd filed Critical Kobe Steel Ltd
Priority to JP4348397A priority Critical patent/JPH10121256A/en
Publication of JPH10121256A publication Critical patent/JPH10121256A/en
Pending legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To provide the electroless plating method and device by which the film forming rate of electroless plating is increased as compared with the conventional electroless plating technique, and hence the productivity is improved. SOLUTION: In this electroless plating method, an electroless plating bath is kept at >95 deg.C, the atmosphere pressure of the bath is made identical to or higher than the saturated vapor pressure of the bath, and the electroless plating device is provided with an electroless plating tank and a means for heating the bath. In this case, the electroless plating tank 10 is set in a pressure space V, and the tank is formed by a pressure vessel.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、無電解めっき方法
及び装置に関し、詳細には各種の工業分野において素材
の表面の高機能化(耐摩耗性や耐食性、電磁気特性、は
んだ付け性、ボンディング性、光学特性、耐熱性、意匠
性等の付与或いは向上)に適用される無電解めっき方法
及び装置に関し、特には、成膜速度が高く、磁気ディス
ク用非磁性下地めっき方法として好適な無電解めっき方
法に関する技術分野に属するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method and an apparatus for electroless plating, and more particularly to a method for improving the surface of a material in various industrial fields (e.g., abrasion resistance, corrosion resistance, electromagnetic properties, solderability, bonding property). Electroless plating method and apparatus applied to imparting or improving optical properties, heat resistance, design properties, etc.), in particular, a high deposition rate, and suitable as a non-magnetic under plating method for a magnetic disk. It belongs to the technical field of methods.

【0002】[0002]

【従来の技術】無電解めっきは、電気めっき等と同様の
湿式タイプの成膜プロセスであり、エレクトロニクスや
家電製品、機械・精密製品、自動車、自転車、自転二
輪、スポーツ・レジャー、航空宇宙、建築・土木等の各
種の工業分野において素材の表面の高機能化(耐摩耗
性、耐食性、磁気記録等の電磁気特性、はんだ付け性、
ボンディング性、光学特性、耐熱性、意匠性等の付与或
いは向上)のための手段として注目されており、その利
用頻度が増加している。この利用増加に伴い、共通ニー
ズとして生産性向上やめっきコストダウンのためのめっ
き速度の高速化などが望まれている。
2. Description of the Related Art Electroless plating is a wet type film forming process similar to electroplating, and is used for electronics, home appliances, machinery and precision products, automobiles, bicycles, bicycles, sports and leisure, aerospace, and architecture.・ In the various industrial fields such as civil engineering, the surface of the material is highly functionalized (abrasion resistance, corrosion resistance, electromagnetic characteristics such as magnetic recording, solderability,
Attention has been paid to this as means for imparting or improving bonding properties, optical properties, heat resistance, design properties, and the like, and the frequency of use thereof has been increasing. Along with this increase in use, there is a demand for increasing productivity and increasing plating speed for reducing plating cost as common needs.

【0003】特に、近年、磁気ディスク分野等において
は、磁気ディスク等の使い易さや高信頼性、低価格化等
の追求がなされており、磁気ディスク用非磁性下地めっ
きである無電解Ni−Pめっきにおいては、耐衝撃性の
向上をはじめとするめっき膜の改善(ピンホール等の膜
欠陥の低減)やめっき速度の高速化などが強く望まれて
いる。
In particular, in recent years, in the field of magnetic disks and the like, the pursuit of ease of use, high reliability, and low price of magnetic disks has been pursued. In plating, there is a strong demand for improvement of a plating film such as improvement of impact resistance (reduction of film defects such as pinholes) and an increase in plating speed.

【0004】このように無電解めっきが注目され、利用
されている理由は、無電解めっきには次の如き特長〜
があるからである。 電気めっきでは外部電源より供給される電子によっ
て溶液中の金属イオンを還元析出させるが、無電解めっ
きは金属塩と還元剤を共存させた溶液から化学反応によ
り金属・合金めっき皮膜を析出させる技術である。従っ
て、無電解めっきにおいては、電気めっきでは不可欠な
対極や外部電源装置が不要であり、溶液中に被めっき材
を単純浸漬するだけで成膜できる。 しかも、無電解めっきは、原理的に付き回り性及び
膜厚の均一性が優れ、被めっき材の形状の如何にかかわ
らず各部が均一にめっきされる。特に、磁気ディスク用
非磁性下地めっきには膜厚の均一性が厳しく要求されて
おり、この膜厚均一性を確保するのに無電解めっきは好
適である。 無電解めっきは、セラミックやプラスチック等の不
導体表面へもめっき可能である。
As described above, electroless plating is attracting attention and is used because electroless plating has the following features.
Because there is. In electroplating, metal ions in a solution are reduced and precipitated by electrons supplied from an external power source.In electroless plating, a metal / alloy plating film is deposited by a chemical reaction from a solution in which a metal salt and a reducing agent coexist. is there. Therefore, in the electroless plating, a counter electrode and an external power supply, which are indispensable for the electroplating, are not required, and the film can be formed simply by immersing the material to be plated in the solution. In addition, electroless plating is excellent in principle in terms of throwing power and uniformity of film thickness, and each part is uniformly plated regardless of the shape of the material to be plated. In particular, non-magnetic undercoats for magnetic disks are strictly required to have uniform film thickness, and electroless plating is suitable for ensuring this film thickness uniformity. Electroless plating can also be performed on non-conductive surfaces such as ceramics and plastics.

【0005】しかしながら、無電解めっきは、かかる特
長を有する反面、一般的に成膜速度が電気めっきの場合
よりも低く、例えば、Ni−Pめっきの場合、無電解め
っきの成膜速度は電気めっきの成膜速度の1/3 〜1/6 と
小さく、それは生産性の低下、ひいてはコスト高の要因
となっている。従って、成膜速度の向上が望まれ、課題
となっている。
[0005] However, although electroless plating has such features, the film forming speed is generally lower than that of electroplating. For example, in the case of Ni-P plating, the film forming speed of electroless plating is lower than that of electroplating. Is as small as 1/3 to 1/6 of the film formation rate, which causes a decrease in productivity and a higher cost. Therefore, an improvement in the film formation rate is desired and has been a problem.

【0006】ところで、無電解めっき技術については多
くの研究報告がなされている。例えば、「無電解めっき
−基礎と応用−:電気鍍金研究会編/日刊工業新聞社発
行(1994)」には、無電解めっきの原理から最新の成果も
含めた知見が収録されており、多くの参考文献が紹介さ
れている。
Incidentally, many research reports have been made on the electroless plating technique. For example, “Electroless Plating-Fundamentals and Applications-: Electroplating Study Group Edition / Published by Nikkan Kogyo Shimbun (1994)” contains knowledge including the latest results from the principles of electroless plating. References are introduced.

【0007】それらからもわかる如く、上記無電解めっ
きの成膜速度の向上という課題を解決すべく提案されて
いる従来技術としては、(A) めっき浴の攪拌、(B) めっ
き浴温度の制御、あるいは、(C) pHや還元剤濃度の調
整、各種薬剤(緩衝剤、錯化剤)の添加等のめっき浴組
成の調整などの対策が講じられたものがある。尚、無電
解めっきよりも電気めっきの方が成膜速度を大きくする
ことができる場合の多いことから、(D) 用途によって
は、無電解めっきに代えて電気めっきを使用することあ
るいは試みること(電気めっきへの切り替え)が行われ
ている。
As can be seen from the above, the prior arts proposed to solve the problem of improving the film forming rate of the electroless plating include (A) stirring of a plating bath and (B) control of a plating bath temperature. Alternatively, (C) measures have been taken such as adjusting the pH and the concentration of the reducing agent, and adjusting the composition of the plating bath such as addition of various chemicals (buffers, complexing agents). Note that, in many cases, electroplating can increase the film formation rate more than electroless plating. Therefore, depending on the application (D), use or attempt to use electroplating instead of electroless plating ( Switching to electroplating).

【0008】[0008]

【発明が解決しようとする課題】ところが、前記従来の
技術(A) 、(B) においては、下記の如く無電解めっきの
成膜速度の向上がまだ不充分であるという問題点があ
る。
However, in the above-mentioned prior arts (A) and (B), there is a problem that the film formation rate of electroless plating is still insufficiently improved as described below.

【0009】(A) :めっき浴の攪拌によるものは、空気
攪拌法やスピンめっき法(例えば、特開昭64-55386号公
報)等により限界レベルに達しており、改善余地は少な
く、無電解めっきの成膜速度の向上がまだ不充分であ
る。
(A): In the case of plating bath stirring, the limit level is reached by air stirring method or spin plating method (for example, JP-A-64-55386), and there is little room for improvement. The improvement of the plating film formation rate is still insufficient.

【0010】(B) :めっき浴温度の制御によるものも、
すでに実用的なめっき浴温度の上限値である90℃前後で
なされている場合が多く、適用限界に達しており、無電
解めっきの成膜速度の向上がまだ不充分である。即ち、
めっき浴温度の上昇は成膜速度の向上に効果的である
が、ミスト発生やめっき浴の蒸発の回避等という観点か
ら実用的なめっき浴温度の上限値(90℃)で無電解めっ
きがなされることが多く、この上限値(90℃)により成
膜速度が制限されるため、無電解めっきの成膜速度の向
上がまだ不充分である。
(B): The control of the plating bath temperature also
In many cases, the plating temperature is already about 90 ° C., which is the upper limit value of the practical plating bath temperature, which has reached the applicable limit, and the improvement of the film formation rate of electroless plating is still insufficient. That is,
Increasing the plating bath temperature is effective in increasing the deposition rate, but electroless plating is performed at a practical upper limit (90 ° C) of the plating bath temperature from the viewpoint of avoiding mist generation and evaporation of the plating bath. Since the film forming rate is limited by the upper limit (90 ° C.), the improvement of the film forming rate of the electroless plating is still insufficient.

【0011】一方、前記従来の技術(C) 、(D) には、次
のような問題点がある。即ち、(C)のめっき浴組成の調
整によるものは、めっき浴組成の変更により各種マイナ
ス効果(めっき浴の短寿命化や不安定化等)を生ずる等
という問題点がある。(D) の電気めっきへの切り替えに
関しては、電気めっきは付き回り性や膜厚の均一性に劣
るので、無電解めっきから電気めっきへの切り替えが困
難な場合が多い。
On the other hand, the conventional techniques (C) and (D) have the following problems. That is, the adjustment of the plating bath composition of (C) has a problem that various negative effects (such as shortening of the life of the plating bath and instability) are caused by changing the plating bath composition. Regarding the switch to (D) electroplating, it is often difficult to switch from electroless plating to electroplating because electroplating is poor in throwing power and uniformity of film thickness.

【0012】本発明はこの様な事情に着目してなされた
ものであって、その目的は、前記従来技術の有する問題
点を解消し、前記従来の技術(A) 、(B) の場合よりも無
電解めっきの成膜速度を向上し得、ひいては生産性を向
上し得る無電解めっき方法及び装置を提供しようとする
ものである。
The present invention has been made in view of such circumstances, and an object of the present invention is to solve the problems of the above-mentioned prior art, and to provide a better solution than the above-mentioned prior arts (A) and (B). Another object of the present invention is to provide an electroless plating method and apparatus capable of improving the film forming speed of electroless plating, and thereby improving productivity.

【0013】[0013]

【課題を解決するための手段】上記の目的を達成するた
めに、本発明に係る無電解めっき方法及び装置は、請求
項1〜3、6記載の無電解めっき方法及び請求項4〜
5、7〜8記載の無電解めっき装置としており、それは
次のような構成としたものである。
To achieve the above object, an electroless plating method and apparatus according to the present invention are described in claims 1 to 3 and 6 and in claims 4 to 6.
The electroless plating apparatus described in 5, 7 or 8, which has the following configuration.

【0014】即ち、請求項1記載の無電解めっき方法
は、無電解めっきするに際し、無電解めっき浴の温度を
95℃超の温度にすると共に、該無電解めっき浴の雰囲気
圧力を該無電解めっき浴の飽和蒸気圧と同等以上の圧力
にすることを特徴とする無電解めっき方法である(第1
発明)。
That is, in the electroless plating method according to the first aspect, when performing the electroless plating, the temperature of the electroless plating bath is adjusted.
An electroless plating method characterized in that the temperature is higher than 95 ° C. and the atmospheric pressure of the electroless plating bath is equal to or higher than the saturated vapor pressure of the electroless plating bath (first method).
invention).

【0015】請求項2記載の無電解めっき方法は、前記
無電解めっき浴が、前記無電解めっき浴の雰囲気圧力に
耐える圧力容器の内部に入れられている請求項1記載の
無電解めっき方法である(第2発明)。請求項3記載の
無電解めっき方法は、前記無電解めっき浴が、前記無電
解めっき浴の雰囲気圧力と同一圧の空気あるいはガスが
含まれた圧力空間におかれている請求項1記載の無電解
めっき方法である(第3発明)。
According to a second aspect of the present invention, in the electroless plating method according to the first aspect, the electroless plating bath is placed inside a pressure vessel that can withstand the atmospheric pressure of the electroless plating bath. (Second invention). The electroless plating method according to claim 3, wherein the electroless plating bath is placed in a pressure space containing air or gas at the same pressure as the atmospheric pressure of the electroless plating bath. This is an electrolytic plating method (third invention).

【0016】請求項4記載の無電解めっき装置は、無電
解めっき槽と無電解めっき浴を加熱する手段とを有する
無電解めっき装置において、前記無電解めっき槽が圧力
容器により形成されていることを特徴とする無電解めっ
き装置である(第4発明)。請求項5記載の無電解めっ
き装置は、無電解めっき槽と無電解めっき浴を加熱する
手段とを有する無電解めっき装置において、前記無電解
めっき槽が上部に開口部を有する容器により形成され、
該容器が圧力空間に配されていることを特徴とする無電
解めっき装置である(第5発明)。
According to a fourth aspect of the present invention, in the electroless plating apparatus having an electroless plating bath and a means for heating the electroless plating bath, the electroless plating bath is formed by a pressure vessel. (4th invention). The electroless plating apparatus according to claim 5, wherein in the electroless plating apparatus having an electroless plating tank and a means for heating the electroless plating bath, the electroless plating tank is formed by a container having an opening at an upper part,
An electroless plating apparatus characterized in that the container is disposed in a pressure space (fifth invention).

【0017】請求項6記載の無電解めっき方法は、前記
無電解めっき浴の雰囲気圧力中の蒸気分圧を調整して無
電解めっき浴の蒸発量を制御する請求項1、2又は3記
載の無電解めっき方法である(第6発明)。請求項7記
載の無電解めっき装置は、前記圧力容器内へ気体を導入
する気体導入管と、該圧力容器内の蒸気を該圧力容器外
へ放出する排気管とを有する請求項4記載の無電解めっ
き装置である(第7発明)。請求項8記載の無電解めっ
き装置は、前記圧力空間内へ気体を導入する気体導入管
と、該圧力空間内の蒸気を該圧力空間外へ放出する排気
管とを有する請求項5記載の無電解めっき装置である
(第8発明)。
According to a sixth aspect of the present invention, in the electroless plating method, the evaporation amount of the electroless plating bath is controlled by adjusting a partial pressure of steam in the atmosphere pressure of the electroless plating bath. This is an electroless plating method (sixth invention). The electroless plating apparatus according to claim 7 has a gas introduction pipe for introducing gas into the pressure vessel, and an exhaust pipe for discharging steam in the pressure vessel to outside the pressure vessel. This is an electrolytic plating apparatus (seventh invention). The electroless plating apparatus according to claim 8 has a gas introduction pipe for introducing gas into the pressure space, and an exhaust pipe for discharging steam in the pressure space to outside the pressure space. This is an electrolytic plating apparatus (eighth invention).

【0018】[0018]

【発明の実施の形態】本発明は例えば次のようにして実
施する。ヒータ及び温度調節器を有する圧力容器(オー
トクレーブ等)に圧力調整弁を介して圧縮空気ボンベを
管接続する。次に、この圧力容器内に所定の無電解めっ
き浴を入れ、圧力容器外から遠隔操作可能な被めっき材
保持具に被めっき材を固定し、圧力容器の蓋を閉じた
後、圧縮空気ボンベから圧力容器内の空間部に圧縮空気
を導入して圧力容器内の圧力を大気圧以上の所定圧P0
し、圧力調整弁を閉じる。次に、ヒータ及び温度調節器
を稼働させ、圧力容器内の無電解めっき浴の温度を95℃
超の温度T1に調整する。そうすると、圧力容器内の圧力
は上昇しP1となる。
DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention is implemented, for example, as follows. A compressed air cylinder is connected via a pressure regulating valve to a pressure vessel (autoclave or the like) having a heater and a temperature controller. Next, a predetermined electroless plating bath is placed in the pressure vessel, the workpiece is fixed to a workpiece holder that can be remotely operated from outside the pressure vessel, and the lid of the pressure vessel is closed. the pressure P 0 at the above atmospheric pressure in the pressure vessel by introducing compressed air into the space portion of the pressure vessel from closing the pressure regulating valve. Next, the heater and the temperature controller were operated to raise the temperature of the electroless plating bath in the pressure vessel to 95 ° C.
Adjusted to a temperature T 1 of the super. Then, the pressure in the pressure vessel becomes elevated P 1.

【0019】このとき、室温での圧力容器内の所定圧P0
は、温度T1での圧力容器内の圧力P1が温度T1での無電解
めっき浴の飽和蒸気圧P2超の圧力になるような圧力に定
めておく。そうすると、無電解めっき浴の温度が95℃超
の温度T1になると共に、この温度T1の無電解めっき浴の
雰囲気圧力が該無電解めっき浴の飽和蒸気圧P2超の圧力
P1となる。例えば、使用する無電解めっき浴の110 ℃で
の飽和蒸気圧P2を1.7atm (0.17 MPa)であるとする
と、無電解めっき浴の温度T1は110 ℃、この無電解めっ
き浴の雰囲気圧力P1は2.0atm(0.20 MPa)となる。
At this time, the predetermined pressure P 0 in the pressure vessel at room temperature
Is previously determined pressure, as the pressure P 1 is saturated vapor pressure P 2 greater than the pressure of the electroless plating bath at a temperature T 1 of the pressure vessel at a temperature T 1 of. Then, the temperature of the electroless plating bath to a temperature T 1 of the 95 ° C. greater than the saturated vapor pressure P 2 greater than the pressure of the electroless plating bath atmosphere pressure electroless plating bath of the temperatures T 1
The P 1. For example, if the saturation vapor pressure P 2 at 110 ° C. of the electroless plating bath used is 1.7 atm (0.17 MPa), the temperature T 1 of the electroless plating bath is 110 ° C., and the atmospheric pressure of the electroless plating bath is P 1 is 2.0 atm (0.20 MPa).

【0020】上記無電解めっき浴は温度が95℃超の温度
T1であるものの、雰囲気圧力P1がこの温度T1の無電解め
っき浴の飽和蒸気圧P2超であることから沸点がT1超であ
り、そのため、沸騰現象を呈さず、ミスト発生及びめっ
き浴の蒸発等という支障が生じない。
The above electroless plating bath has a temperature exceeding 95 ° C.
Although a T 1, a boiling point T 1 greater since atmospheric pressure P 1 is a saturated vapor pressure P 2 greater than the electroless plating bath of the temperature T 1, therefore, not exhibit boiling phenomenon, mist generation, and There is no problem such as evaporation of the plating bath.

【0021】次に、被めっき材保持具を圧力容器外から
遠隔操作し、被めっき材を無電解めっき浴中に浸漬して
無電解めっきする。
Next, the material to be plated is remotely operated from outside the pressure vessel, and the material to be plated is immersed in an electroless plating bath for electroless plating.

【0022】このようにすると、沸騰現象を呈さず、ミ
スト発生及びめっき浴の蒸発等という支障を生じること
なく、95℃超の温度T1で無電解めっきすることができ、
ひいては無電解めっきの成膜速度を向上し得る。
[0022] Thus, not exhibit boiling phenomenon, without causing any trouble of such as evaporation of the mist and the plating bath, can be electrolessly plated with a temperature T 1 of the 95 ° C. greater,
As a result, the film forming speed of the electroless plating can be improved.

【0023】かかる本発明の実施の形態からもわかる如
く、本発明によれば、ミスト発生及びめっき浴の蒸発等
という支障を生じることなく、95℃超の温度T1で無電解
めっきすることができ、ひいては無電解めっきの成膜速
度を向上し得る。
[0023] As can be seen from the preferred embodiment of a present invention, according to the present invention, without causing any trouble of such as evaporation of the mist and the plating bath, can be electrolessly plated with a temperature T 1 of the 95 ° C. greater Thus, the film formation rate of electroless plating can be improved.

【0024】この詳細を以下に説明する。The details will be described below.

【0025】大気圧下では100 ℃近傍(気圧や無電解め
っき浴の成分濃度にも依存)で無電解めっき浴が沸騰す
るため、従来法ではミスト発生やめっき浴蒸発の回避等
という観点から実用的なめっき浴温度の上限値は90℃と
なっている。
Under the atmospheric pressure, the electroless plating bath boils at around 100 ° C. (depending on the atmospheric pressure and the component concentration of the electroless plating bath), so that the conventional method is practical from the viewpoint of avoiding mist generation and evaporation of the plating bath. The upper limit of the typical plating bath temperature is 90 ° C.

【0026】これに対し、本発明に係る無電解めっき方
法では、前述の如く、無電解めっきするに際し、無電解
めっき浴の温度を95℃超の温度T1にすると共に、該無電
解めっき浴の雰囲気圧力P1をこの温度T1の無電解めっき
浴の飽和蒸気圧P2と同等以上の圧力にしているので、こ
の無電解めっき浴は沸点がT1以上であり、従って、無電
解めっき浴の沸騰現象を呈さず、ミスト発生及びめっき
浴の蒸発等という支障を生じることなく、95℃超の温度
で無電解めっきすることができ、ひいては無電解めっき
の成膜速度を向上し得る。即ち、無電解めっき浴の沸点
は無電解めっき浴の雰囲気圧力P1が高くなるに伴って高
くなり、この雰囲気圧力P1を無電解めっき浴の飽和蒸気
圧P2超にする(P2よりも高くする)と、この圧力P2と平
衡する沸点(雰囲気圧力がP2のときの沸点)に等しい温
度まで、沸騰現象を呈さず、ミスト発生及びめっき浴の
蒸発等という支障を生じることなく、無電解めっき浴の
温度T1を高めることができ、そのため、無電解めっきの
成膜速度を向上し得る。このとき、無電解めっき浴の温
度が高いほど、成膜速度がより向上し、この温度を高く
することは成膜速度の向上に極めて効果的である。従っ
て、本発明に係る無電解めっき方法によれば、ミスト発
生及びめっき浴の蒸発等という支障を生じることなく、
前記従来技術の有する問題点を解消し得、前記従来の技
術(A) 、(B)の場合よりも無電解めっきの成膜速度を向
上することができ、ひいては生産性を向上し得るように
なる。
[0026] In contrast, in the electroless plating method according to the present invention, as described above, when electroless plating, the temperature of the electroless plating bath while the temperature T 1 of the 95 ° C. greater than the electroless plating bath since the atmospheric pressure P 1 of which the saturated vapor pressure P 2 equal to or higher than the pressure of the electroless plating bath of the temperature T 1, the electroless plating bath is a boiling point of above T 1, therefore, the electroless plating The electroless plating can be performed at a temperature higher than 95 ° C. without causing the boiling phenomenon of the bath and without causing troubles such as generation of mist and evaporation of the plating bath, thereby improving the film forming speed of the electroless plating. That is, the boiling point of the electroless plating bath increases with the atmospheric pressure P 1 of the electroless plating bath is higher than (P 2 to the atmospheric pressure P 1 in the saturated vapor pressure P 2 greater than the electroless plating bath and also higher), the pressure P 2 to the boiling point (atmospheric pressure equilibrium to a temperature equal to the boiling point) in the case of P 2, not exhibit boiling phenomenon, without causing any trouble of such as evaporation of the mist and the plating bath , it is possible to increase the temperature T 1 of the electroless plating bath, therefore, can improve the deposition rate of the electroless plating. At this time, the higher the temperature of the electroless plating bath is, the more the film forming rate is improved, and raising this temperature is extremely effective for improving the film forming rate. Therefore, according to the electroless plating method according to the present invention, without causing problems such as mist generation and evaporation of the plating bath,
It is possible to solve the problems of the prior art, to improve the film formation rate of the electroless plating than in the case of the conventional techniques (A) and (B), and to improve the productivity. Become.

【0027】但し、上記無電解めっき浴の雰囲気圧力P1
を無電解めっき浴の飽和蒸気圧P2超ではなくP2に等しい
値にした場合、無電解めっき浴の沸点はT1となるので、
無電解めっき浴の沸騰現象を呈し、ミスト発生現象及び
めっき浴の蒸発現象が起こるが、これらは下記の如く外
部と遮断された系内で起こるので、このミスト発生現象
及びめっき浴の蒸発現象の発生は支障がない。従って、
実質的にはミスト発生及びめっき浴の蒸発等という支障
を生じることなく、95℃超の温度T1で無電解めっきする
ことができ、ひいては無電解めっきの成膜速度を向上し
得る。
However, the atmospheric pressure of the above electroless plating bath P 1
A case in which a value equal to P 2 rather than the saturated vapor pressure P 2 greater than the electroless plating bath, since the boiling point of the electroless plating bath becomes T 1,
The electroless plating bath exhibits a boiling phenomenon, and a mist generation phenomenon and an evaporation phenomenon of the plating bath occur.These phenomena occur in a system isolated from the outside as described below. Outbreak does not have any trouble. Therefore,
Substantially without causing any trouble of such as evaporation of the mist and the plating bath, can be electrolessly plated with a temperature T 1 of the 95 ° C. greater, can improve the deposition rate of the thus electroless plating.

【0028】即ち、無電解めっき浴の雰囲気圧力P1を無
電解めっき浴の飽和蒸気圧P2に等しい値にするために
は、基本的に無電解めっき浴の雰囲気圧力を制御し得る
ことが必要であり、そのためには無電解めっき浴は外部
と遮断された系内(閉じた系内、即ち、閉じたスペース
内)、例えば後述する圧力容器や圧力空間内におかれて
いることが必要である。故に、無電解めっき浴は必然的
に外部と遮断された系内にある。そのため、無電解めっ
き浴の沸騰現象を呈し、ミスト発生現象及びめっき浴の
蒸発現象が起こっても、これらは外部と遮断された系内
で起こるので、このミスト発生現象及びめっき浴の蒸発
現象の発生は支障がない。従って、実質的にはミスト発
生及びめっき浴の蒸発等という支障を生じることなく、
95℃超の温度T1で無電解めっきすることができ、ひいて
は無電解めっきの成膜速度を向上し得る。
That is, in order to make the atmospheric pressure P 1 of the electroless plating bath equal to the saturated vapor pressure P 2 of the electroless plating bath, it is basically necessary to control the atmospheric pressure of the electroless plating bath. For this purpose, the electroless plating bath must be placed in a system that is isolated from the outside (in a closed system, that is, in a closed space), for example, in a pressure vessel or pressure space described later. It is. Thus, the electroless plating bath is necessarily in a system that is isolated from the outside. Therefore, even if the electroless plating bath exhibits a boiling phenomenon and a mist generation phenomenon and an evaporation phenomenon of the plating bath occur, since these occur in a system that is shut off from the outside, the mist generation phenomenon and the evaporation phenomenon of the plating bath occur. Outbreak does not have any trouble. Therefore, virtually no hindrance such as mist generation and evaporation of the plating bath occurs,
Can be electrolessly plated with 95 ° C. greater than the temperature T 1, it can improve the deposition rate of the thus electroless plating.

【0029】本発明に係る無電解めっき方法において無
電解めっき浴の温度を95℃超の温度T1にしているのは、
90℃以下にすると、無電解めっきの成膜速度が前記従来
の技術(A) 、(B) の場合と同等もしくはそれ以下とな
り、無電解めっきの成膜速度の向上が全く図れず、90℃
超95℃以下にすると、前記従来の技術(A) 、(B) の場合
よりも無電解めっきの成膜速度が向上するが、その向上
の程度は小さくて不充分であるからである。
[0029] The temperature of the electroless plating bath in an electroless plating method according to the present invention is to a temperature T 1 of the 95 ° C. than the
When the temperature is set to 90 ° C. or lower, the film forming speed of the electroless plating is equal to or lower than that of the conventional technologies (A) and (B), and the film forming speed of the electroless plating cannot be improved at all.
If the temperature is super lower than 95 ° C., the film forming speed of the electroless plating is improved as compared with the cases of the prior arts (A) and (B), but the degree of the improvement is small and insufficient.

【0030】前記の如く無電解めっき浴の温度を95℃超
の温度T1にすると共に、該温度T1の無電解めっき浴の雰
囲気圧力を該温度T1の無電解めっき浴の飽和蒸気圧P2
同等以上の圧力P1にするためには、この無電解めっき浴
の雰囲気圧力P1に耐える圧力容器を用い、該圧力容器の
内部に無電解めっき浴を入れ、温度T1に加熱すればよい
(第2発明)。ここで、加熱前の圧力容器内の空間部の
圧力が大気圧である場合、P1はP2と同等もしくはP2より
少し高い程度である。一方、前記本発明の実施の形態例
の場合の如く、加熱前の圧力容器内の空間部の圧力を大
気圧以上の圧力P0にした場合、P1はP2よりも高く、P1
P2との差はP0に応じて大きくなる。
The saturated vapor pressure of said as the temperature of the electroless plating bath while the temperature T 1 of the 95 ° C. greater than the temperature T 1 of the electroless plating bath electroless plating bath temperature T 1 atmosphere pressure to P 2 equal to or higher than the pressure P 1 is a pressure vessel to withstand the atmospheric pressure P 1 of the electroless plating bath, placed in an electroless plating bath to the interior of the pressure vessel, heated to a temperature T 1 of (Second invention). Here, when the pressure of the space in the pressure vessel before heating is atmospheric pressure, P 1 is the degree slightly higher than P 2 equal to or P 2. Meanwhile, the as in the case of the embodiment of the present invention, when the pressure in the space portion in the pressure vessel prior to heating to the pressure P 0 above atmospheric pressure, P 1 is higher than P 2, and P 1
The difference between P 2 increases according to P 0.

【0031】あるいは、温度T1に調整された無電解めっ
き浴が前記無電解めっき浴の雰囲気圧力P1と同一圧の空
気あるいはガスが含まれた圧力空間におかれている状態
にすればよい(第3発明)。ここで、圧力空間とは、大
気圧を超える圧力を実現することのできる空間のことで
ある。かかる圧力空間は、例えば圧力部屋や圧力容器の
内部に圧縮空気や大気圧超のガスを送り込むことにより
実現し得る。
Alternatively, the electroless plating bath adjusted to the temperature T 1 may be placed in a pressure space containing air or gas at the same pressure as the atmospheric pressure P 1 of the electroless plating bath. (Third invention). Here, the pressure space is a space capable of realizing a pressure exceeding atmospheric pressure. Such a pressure space can be realized, for example, by sending compressed air or a gas having a pressure higher than the atmospheric pressure into a pressure chamber or a pressure vessel.

【0032】上記第3発明に係る状態は、より具体的に
は、上部に開口部を有する容器に無電解めっき浴を入れ
たものを、圧力部屋や圧力容器等の内部(圧力空間)に
おき、該内部に圧縮空気や大気圧超のガスを送り込み、
無電解めっき浴を温度T1に加熱すると共に、該内部(圧
力空間)の圧力をP1にすることにより実現することがで
きる。
More specifically, the condition according to the third aspect of the present invention is as follows. A container having an opening at the top and containing an electroless plating bath is placed inside a pressure chamber or pressure vessel (pressure space). , Sending compressed air or a gas exceeding atmospheric pressure into the inside,
This can be realized by heating the electroless plating bath to the temperature T 1 and setting the pressure in the inside (pressure space) to P 1 .

【0033】一方、本発明に係る無電解めっき装置は、
前述の如く、無電解めっき槽と無電解めっき浴を加熱す
る手段とを有する無電解めっき装置であって、この無電
解めっき槽が圧力容器により形成されている(第4発
明)。また、無電解めっき槽と無電解めっき浴を加熱す
る手段とを有する無電解めっき装置であって、この無電
解めっき槽が上部に開口部を有する容器により形成さ
れ、該容器が圧力空間に配されている(第5発明)。こ
れらの装置によれば、前記第2発明、第3発明について
の記述事項からわかる如く、いずれの装置も、無電解め
っき浴の温度を95℃超の温度T1にすると共に、該温度T1
の無電解めっき浴の雰囲気圧力を該温度T1の無電解めっ
き浴の飽和蒸気圧P2と同等以上の圧力P1にすることがで
き、従って、本発明に係る無電解めっき方法を遂行し
得、そのため、ミスト発生及びめっき浴の蒸発等という
支障を生じることなく、前記従来の技術(A) 、(B) の場
合よりも無電解めっきの成膜速度を向上し得、ひいては
生産性を向上し得るようになる。尚、上記無電解めっき
浴の雰囲気圧力P1を無電解めっき浴の飽和蒸気圧P2超に
した場合には、無電解めっき浴の沸騰現象を呈すること
もない。
On the other hand, the electroless plating apparatus according to the present invention
As described above, the present invention is an electroless plating apparatus having an electroless plating bath and a means for heating the electroless plating bath, wherein the electroless plating bath is formed by a pressure vessel (a fourth invention). An electroless plating apparatus having an electroless plating bath and a means for heating the electroless plating bath, wherein the electroless plating bath is formed by a container having an opening at an upper portion, and the container is disposed in a pressure space. (Fifth invention). According to these devices, the second invention, as seen from the descriptive matter of the third invention, any of the apparatus, the temperature of the electroless plating bath as well as to 95 ° C. than the temperature T 1 of the, temperature T 1
No atmospheric pressure in the electroplating bath can be a saturated vapor pressure P 2 equal to or higher than the pressure P 1 of the electroless plating bath of the temperature T 1, thus, performs an electroless plating method according to the present invention Therefore, the film formation rate of the electroless plating can be improved as compared with the above-mentioned conventional techniques (A) and (B) without any troubles such as generation of mist and evaporation of the plating bath, thereby increasing productivity. Can be improved. Incidentally, in the case where the atmospheric pressure P 1 of the electroless plating bath to the saturation vapor pressure P 2 greater than the electroless plating bath, nor exhibit boiling phenomenon of the electroless plating bath.

【0034】ここで、第4発明に係る圧力容器を用いる
場合或いは第2発明の場合、P1(無電解めっき浴の雰囲
気圧力)をP2(無電解めっき浴の飽和蒸気圧)に等しい
値にし、それにより無電解めっき浴の沸点がT1となり、
無電解めっき浴の沸騰現象を呈し、ミスト発生現象及び
めっき浴の蒸発現象が起こっても、これらは圧力容器内
で起こり、圧力容器内は平衡状態にあり、圧力容器の外
部へのミストの飛散(拡散)及びめっき浴の蒸発(ひい
ては蒸気の拡散)は生じず、又、めっき浴の蒸発による
減少も生じないので、この圧力容器内での平衡状態のミ
スト発生現象及びめっき浴の蒸発現象はそれ自体全く支
障のないものである。従って、P1=P2にしたときでも、
実質的にはミスト発生及びめっき浴の蒸発等という支障
が生じない。但し、沸騰の際の気泡によるめっき皮膜欠
陥の発生を抑制するという観点から、P1をP2超(即ちP1
>P2)とし、それにより無電解めっき浴の沸点をT1超と
し、無電解めっき浴を沸騰させないようにするほうが望
ましい。
Here, in the case of using the pressure vessel according to the fourth invention or in the case of the second invention, P 1 (atmospheric pressure of the electroless plating bath) is set to a value equal to P 2 (saturated vapor pressure of the electroless plating bath). to it a boiling point of T 1 next to the electroless plating bath,
Even if the electroless plating bath exhibits a boiling phenomenon and a mist generation phenomenon and a plating bath evaporation phenomenon occur, these occur in the pressure vessel, the pressure vessel is in an equilibrium state, and the mist scatters to the outside of the pressure vessel. (Diffusion) and evaporation of the plating bath (and thus vapor diffusion) do not occur, and no reduction occurs due to evaporation of the plating bath. In itself, there is no trouble at all. Therefore, even when P 1 = P 2 ,
Substantially no trouble such as generation of mist and evaporation of the plating bath occurs. However, from the viewpoint of suppressing the occurrence of plating film defects due to bubbles at the time of boiling, P 1 exceeds P 2 (that is, P 1
> P 2 ), so that the boiling point of the electroless plating bath should be higher than T 1 so that the electroless plating bath does not boil.

【0035】第5発明に係る装置を用いる場合或いは第
3発明の場合、P1=P2にしたとき、無電解めっき浴の沸
騰現象を呈し、ミスト発生現象及びめっき浴の蒸発現象
が起こるが、これらは圧力空間内で起こり、圧力空間の
外部へのミストの拡散及びめっき浴の蒸発蒸気の拡散は
生じないので、予め圧力空間を構成する内壁表面や圧力
空間内の機器に防錆処理等をしてこれらにミストや蒸気
が付着しても支障がないようにしておくことにより、実
質的にはミスト発生及びめっき浴の蒸発が起こっても支
障はない。しかし、ミスト発生及びめっき浴の蒸発現象
が起こらなければ、かかる防錆処理等の処置が不必要と
なり、或いは処理が簡略化され、又、めっき浴の蒸発に
よる減少が抑制されるので、ミスト発生及びめっき浴の
蒸発現象が起こらないようにするほうがよく、そのため
P1>P2とすることが望ましい。又、沸騰気泡によるめっ
き皮膜欠陥の発生を抑制の点からもP1>P2とすることが
望ましい。
When the apparatus according to the fifth invention is used or in the case of the third invention, when P 1 = P 2 , the electroless plating bath exhibits a boiling phenomenon, and a mist generation phenomenon and an evaporation phenomenon of the plating bath occur. Since these occur in the pressure space and do not cause the diffusion of mist to the outside of the pressure space and the diffusion of evaporation vapor from the plating bath, the surface of the inner wall that composes the pressure space and the equipment in the pressure space are subjected to rust prevention treatment in advance. In this way, there is no problem even if mist or vapor adheres to these, so that there is substantially no problem even if mist generation and evaporation of the plating bath occur. However, if the generation of mist and the phenomenon of evaporation of the plating bath do not occur, such a treatment as rust prevention treatment becomes unnecessary, or the treatment is simplified, and the reduction due to the evaporation of the plating bath is suppressed. And it is better to avoid the evaporation phenomenon of the plating bath.
It is desirable that P 1 > P 2 . It is also desirable that P 1 > P 2 from the viewpoint of suppressing the occurrence of plating film defects due to boiling bubbles.

【0036】上記第4発明に係る無電解めっき装置の例
を図1に示す。この無電解めっき装置は、無電解めっき
浴の貯水槽5に圧力ポンプ6を管接続し、該圧力ポンプ
6に無電解めっき浴の加熱手段としてヒータ及び温度調
節器を有する加熱器7を管接続し、該加熱器7に無電解
めっき槽としてヒータ及び温度調節器を有する圧力容器
(オートクレーブ)1を管接続し、該圧力容器1に冷却
器2、再生器3、ろ過器4をこの順に管接続し、該ろ過
器4と前記貯水槽5とを管接続してなるものである。
尚、必要に応じて(特にP1>P2とする場合)、上記圧力
容器1は高圧ガス導入管を有し、該導入管には圧力調整
弁を介して圧縮空気ボンベが管接続されていることが望
ましい。
FIG. 1 shows an example of the electroless plating apparatus according to the fourth invention. In this electroless plating apparatus, a pressure pump 6 is connected to a water tank 5 of the electroless plating bath by a pipe, and a heater 7 having a heater and a temperature controller as a heating means of the electroless plating bath is connected to the pressure pump 6 by a pipe. Then, a pressure vessel (autoclave) 1 having a heater and a temperature controller as an electroless plating tank is connected to the heater 7 by a tube, and a cooler 2, a regenerator 3, and a filter 4 are connected to the pressure vessel 1 in this order. The filter 4 and the water storage tank 5 are connected by pipe connection.
If necessary (especially when P 1 > P 2 ), the pressure vessel 1 has a high-pressure gas inlet pipe, and a compressed air cylinder is connected to the inlet pipe via a pressure regulating valve. Is desirable.

【0037】この無電解めっき装置によれば、圧力容器
1内(めっき槽)において無電解めっき浴の温度を95℃
超の温度T1にすると共に、該温度T1の無電解めっき浴の
雰囲気圧力を該温度T1の無電解めっき浴の飽和蒸気圧P2
と同等以上の圧力P1にすることができ、従って、本発明
に係る無電解めっき方法を遂行し得る。また、無電解め
っきに不適切となっためっき液を冷却器2、再生器3、
ろ過器4に送り、再生し適切なめっき液とし得、そし
て、これを貯水槽5から加熱器7に送って95℃超の温度
T1にした後、圧力容器1内(めっき槽)へ戻すことによ
り、再度使用し得る。そのため、断続的(半連続的)に
本発明に係る無電解めっき方法を遂行し得る。
According to this electroless plating apparatus, the temperature of the electroless plating bath is set to 95 ° C. in the pressure vessel 1 (plating tank).
While the temperature T 1 of the super-saturated vapor pressure of the electroless plating bath of the temperature T 1 of the temperature T 1 of the atmosphere pressure of the electroless plating bath P 2
And it can be equal or higher pressure P 1, therefore, may perform the electroless plating method of the present invention. In addition, the plating solution that has become unsuitable for electroless plating is cooled by the cooler 2, the regenerator 3,
It can be sent to the filter 4 and regenerated to obtain a suitable plating solution, and this can be sent from the water storage tank 5 to the heater 7 to a temperature of more than 95 ° C.
After the T 1, by returning the pressure vessel 1 (plating bath), it can be used again. Therefore, the electroless plating method according to the present invention can be performed intermittently (semi-continuously).

【0038】第5発明に係る無電解めっき装置の例を図
2に示す。本無電解めっき装置は、無電解めっき浴の貯
水槽8に、無電解めっき浴加熱手段としてヒータ及び温
度調節器を有する加熱器9を管接続し、該加熱器9に無
電解めっき槽として上部に開口部を有する容器により形
成されためっき槽10をポンプ(図示していない)を介し
て管接続し、該めっき槽10に冷却器11、再生器12、ろ過
器13をこの順に管接続し、該ろ過器13と前記貯水槽8と
をポンプ(図示していない)を介して管接続してなるも
のを、ガス導入口Pを有し内部に大気圧以上の圧力空間
を形成することのできる圧力部屋(圧力空間)V内に配
し、この圧力部屋Vのガス導入口Pに圧力調整弁を介し
て圧縮空気ボンベ(図示していない)を管接続してなる
ものである。尚、貯水槽8やめっき槽10から圧力空間内
へのめっき浴の蒸発蒸気の拡散及びミストの拡散を抑制
し、それにより圧力空間内の機器等への影響を軽減する
と共にめっき浴の蒸発による減少を軽減するという観点
から、貯水槽8やめっき槽10は図2に示す如く蓋をする
などして出来るだけ密閉することが望ましい。
FIG. 2 shows an example of the electroless plating apparatus according to the fifth invention. In the present electroless plating apparatus, a heater 9 having a heater and a temperature controller as a means for heating the electroless plating bath is pipe-connected to a water tank 8 for the electroless plating bath. A plating tank 10 formed by a container having an opening is connected to the plating tank 10 via a pump (not shown), and a cooler 11, a regenerator 12, and a filter 13 are connected to the plating tank 10 in this order. The filter 13 and the water storage tank 8 are connected by a pipe via a pump (not shown) to form a pressure space having a gas inlet P and a pressure higher than the atmospheric pressure inside. It is arranged in a pressure chamber (pressure space) V which can be formed, and a compressed air cylinder (not shown) is connected to the gas inlet P of the pressure chamber V via a pressure regulating valve. In addition, the diffusion of evaporation vapor and mist of the plating bath from the water storage tank 8 and the plating tank 10 into the pressure space is suppressed, thereby reducing the influence on the equipment and the like in the pressure space and reducing the evaporation of the plating bath. From the viewpoint of reducing the decrease, it is preferable that the water storage tank 8 and the plating tank 10 be sealed as much as possible by covering the lid as shown in FIG.

【0039】本無電解めっき装置によれば、貯水槽8に
無電解めっき液を入れ、めっき槽10内に被めっき材を配
した後、圧縮空気ボンベから圧力部屋V内に圧縮空気を
導入して圧力部屋V内の圧力を大気圧以上の所定圧P0
し、次に、貯水槽8から無電解めっき液を加熱器9に送
り、加熱器9により95℃超の温度T1に調整した後、めっ
き槽10に送ることにより、めっき槽10における無電解め
っき浴の温度を95℃超の温度T1にすると共に、該温度T1
の無電解めっき浴の雰囲気圧力を該温度T1の無電解めっ
き浴の飽和蒸気圧P2と同等以上の圧力P1にすることがで
き、従って、本発明に係る無電解めっき方法を遂行し得
る。又、無電解めっきに不適切となっためっき液を冷却
器11、再生器12、ろ過器13に送り、再生し適切なめっき
液とし得、そして、これを貯水槽8から加熱器9に送っ
て95℃超の温度T1にした後、めっき槽10内へ戻すことに
より、再度使用し得る。そのため、連続的に本発明に係
る無電解めっき方法を遂行し得る。
According to the present electroless plating apparatus, the electroless plating solution is put into the water tank 8, the material to be plated is placed in the plating tank 10, and compressed air is introduced from the compressed air cylinder into the pressure chamber V. The pressure in the pressure chamber V was adjusted to a predetermined pressure P 0 equal to or higher than the atmospheric pressure, and then the electroless plating solution was sent from the water storage tank 8 to the heater 9, and adjusted to a temperature T 1 exceeding 95 ° C. by the heater 9. after, by sending to the plating tank 10, while the temperature of the electroless plating bath to a temperature T 1 of the 95 ° C. than in the plating bath 10, the temperature T 1
No atmospheric pressure in the electroplating bath can be a saturated vapor pressure P 2 equal to or higher than the pressure P 1 of the electroless plating bath of the temperature T 1, thus, performs an electroless plating method according to the present invention obtain. In addition, the plating solution that has become unsuitable for electroless plating is sent to a cooler 11, a regenerator 12, and a filter 13 to regenerate a suitable plating solution, and then sent from a water storage tank 8 to a heater 9. after the temperature T 1 of the 95 ° C. greater than Te, by returning to the plating tank 10 may be used again. Therefore, the electroless plating method according to the present invention can be continuously performed.

【0040】ところで、無電解めっき浴の成分濃度が高
いほど、無電解めっき浴の沸点が高くなる傾向があるの
で、ミスト発生及びめっき浴の蒸発等という支障を生じ
ることなく、無電解めっきするために必要な無電解めっ
き浴の雰囲気圧力P1が低くなり、ひいては圧力容器や圧
力部屋に負荷される圧力が低減される。従って、本発明
を適用するに際し、無電解めっき浴の成分濃度を高めて
支障がない場合は、該成分濃度をできるだけ高めること
が望ましい。
By the way, since the boiling point of the electroless plating bath tends to be higher as the component concentration of the electroless plating bath is higher, the electroless plating is performed without causing any trouble such as generation of mist and evaporation of the plating bath. electroless plating bath ambient pressure P 1 becomes lower the required, pressure is reduced to be loaded in turn the pressure vessel and the pressure chambers. Therefore, when applying the present invention, if there is no problem in increasing the component concentration of the electroless plating bath, it is desirable to increase the component concentration as much as possible.

【0041】無電解めっき浴の温度T1が高いほど、成膜
速度がより向上する点ではよいが、該温度T1の無電解め
っき浴の飽和蒸気圧P2が高くなるので、該圧力P2と同等
以上であることの必要な無電解めっき浴の雰囲気圧力P1
が高くなり、そのため、圧力容器や圧力部屋に負荷され
る圧力が大きくなり、それらの構成に必要なコストが上
昇する。
Although the higher the temperature T 1 of the electroless plating bath, the better the film-forming rate is, the higher the saturation vapor pressure P 2 of the electroless plating bath at the temperature T 1 , the higher the pressure P. 2 and the ambient pressure P 1 of the necessary electroless plating bath is at least equivalent
, Which increases the pressure applied to the pressure vessels and pressure chambers and increases the costs required for their construction.

【0042】一方、無電解めっき浴の温度T1が成膜速度
に及ぼす影響は著しく、無電解めっき浴の温度T1を95℃
より少し高くすることによって成膜速度が大幅に向上す
る。例えば、後述の実施例からわかる如く、無電解めっ
き浴の温度が従来の上限値である90℃の場合の成膜速度
に比較し、100 ℃の場合の成膜速度は約2倍、110 ℃の
場合の成膜速度は約5倍、120 ℃の場合の成膜速度は約
10倍に向上する。
On the other hand, the temperature T 1 is significantly effect on the deposition rate of an electroless plating bath, the temperature T 1 of the electroless plating bath 95 ° C.
By making it slightly higher, the film forming speed is greatly improved. For example, as will be understood from the examples described later, the film forming rate at 100 ° C. is about twice as high as that at 110 ° C. compared to the film forming rate when the temperature of the electroless plating bath is 90 ° C. which is the conventional upper limit. In the case of, the deposition rate is about 5 times, and in the case of
10 times better.

【0043】従って、本発明を適用するに際し、成膜速
度の向上分と圧力容器や圧力空間の構成に必要なコスト
とをよく勘案して無電解めっき浴の温度T1及び無電解め
っき浴の雰囲気圧力P1等を設定することが望ましい。か
かる観点からすると、無電解めっき浴の温度T1は、この
温度T1での無電解めっき浴の飽和蒸気圧P2が大気圧の数
倍以下の範囲内となる95℃超150 ℃以下にすることが望
ましい。かかる95℃超150 ℃以下の温度に設定した場
合、比較的圧力容器や圧力空間の構成に必要なコストが
低い割りには成膜速度の向上が大きく、例えば、120 ℃
近傍の温度に設定した場合、圧力容器や圧力空間として
は簡易なものでよく、従来の90℃の場合の10倍の成膜速
度が実現され、又、100 〜110 ℃の温度に設定した場
合、圧力容器や圧力空間としては更に簡易なものでよ
く、例えば圧力鍋でよく、従来の90℃の場合の2〜5倍
の成膜速度が可能である。尚、無電解めっき浴の成分の
分解等による機能低下を来さないような温度T1にするこ
とに留意する必要があり、例えば無電解Ni−Pめっき
の場合、そのNi−Pめっき浴に還元剤として添加され
ている次亜りん酸塩は140 ℃超では分解するので、かか
る還元剤の高温安定性等の観点から、めっき浴の温度T1
は95℃超140 ℃以下にするのがよい。
Therefore, when applying the present invention, the temperature T 1 of the electroless plating bath and the cost of the it is desirable to set the atmospheric pressure P 1 and the like. From this point of view, the temperature T 1 of the electroless plating bath, the saturation vapor pressure P 2 of the electroless plating bath at the temperature T 1 is less 95 ° C. Ultra 0.99 ° C. to be in the range of several times the atmospheric pressure It is desirable to do. When the temperature is set to be higher than 95 ° C. and equal to or lower than 150 ° C., the film forming rate is greatly improved in spite of the relatively low cost required for forming the pressure vessel and the pressure space.
When the temperature is set to a nearby temperature, a simple pressure vessel or pressure space is sufficient, and a film deposition rate that is 10 times that of the conventional case of 90 ° C is realized, and when the temperature is set to 100 to 110 ° C. Further, the pressure vessel and the pressure space may be simpler, for example, a pressure cooker, and a film formation rate 2 to 5 times that of the conventional case of 90 ° C. is possible. Incidentally, it is necessary to note that the temperatures T 1, such as not hexa functional deterioration due to decomposition of components of an electroless plating bath, for example, in the case of electroless Ni-P plating, on the Ni-P plating bath Since hypophosphite added as a reducing agent decomposes at a temperature exceeding 140 ° C., from the viewpoint of the high-temperature stability of the reducing agent, the temperature of the plating bath T 1
The temperature should be more than 95 ° C and 140 ° C or less.

【0044】本発明において無電解めっき浴の温度T1
95℃超にする必要があり、そうすることによって前記従
来の技術(A) 、(B) の場合よりも無電解めっきの成膜速
度が充分に向上し、無電解めっきの成膜速度の向上が図
れるが、前述の如く、無電解めっき浴の温度が従来の上
限値である90℃の場合の成膜速度に比較し、T1=100℃
の場合の成膜速度は約2倍、T1=110 ℃の場合の成膜速
度は約5倍、T1=120℃の場合の成膜速度は約10倍に向
上し、T1≧100 ℃とすることにより成膜速度は約2倍以
上と飛躍的に向上するので、成膜速度の点からすると、
無電解めっき浴の温度T1は100 ℃以上とすることが望ま
しく、更には成膜速度が約5倍以上に向上する110 ℃以
上とすることが望ましい。
In the present invention, the temperature T 1 of the electroless plating bath is
It is necessary to exceed 95 ° C., so that the deposition rate of the electroless plating is sufficiently improved and the deposition rate of the electroless plating is improved as compared with the conventional techniques (A) and (B). However, as described above, T 1 = 100 ° C. compared to the film forming rate when the temperature of the electroless plating bath is 90 ° C. which is the conventional upper limit.
The film forming rate in the case of T 1 is about double, the film forming rate in the case of T 1 = 110 ° C. is about 5 times, and the film forming rate in the case of T 1 = 120 ° C. is about 10 times, and T 1 ≧ 100 C., the film formation rate is drastically improved to about twice or more. Therefore, in terms of the film formation rate,
Temperature T 1 of the electroless plating bath is preferably set to 100 ° C. or more, more desirably to 110 ° C. or higher the deposition rate is increased above about 5 times.

【0045】本発明に係る無電解めっき方法では、前述
の如く、無電解めっき浴の温度を95℃超の温度T1にする
と共に、該無電解めっき浴の雰囲気圧力P1をこの温度T1
の無電解めっき浴の飽和蒸気圧P2と同等以上の圧力にし
ているが、このとき、前記無電解めっき浴の雰囲気圧力
中の蒸気分圧を調整して無電解めっき浴の蒸発量を制御
するようにすると、長期間にわたって無電解めっきする
場合であっても、無電解めっきの成膜速度及びめっき品
質を安定させることができる(第6発明)。この詳細を
以下説明する。
[0045] In the electroless plating method according to the present invention, as described above, the temperature of the electroless plating bath while the temperature T 1 of the 95 ° C. greater than the temperature T 1 of the atmosphere pressure P 1 of the electroless plating bath
Electroless is the saturated vapor pressure P 2 equal to or higher than the pressure of the plating bath, but this time, the control amount of evaporation vapor partial pressure to adjust to the electroless plating bath in the ambient pressure of the electroless plating bath By doing so, it is possible to stabilize the film formation rate and plating quality of electroless plating even when electroless plating is performed for a long period of time (sixth invention). The details will be described below.

【0046】無電解めっきは化学反応による金属析出現
象を利用しためっきであり、めっき時間の経過に伴い、
めっき浴中の金属イオン種及び析出反応に関与した還元
剤等が消耗するだけでなく、水素ガスが発生し、めっき
浴のpHも変化する。そこで、一般には金属塩、還元剤、
錯化剤、緩衝剤、pH調整のためのアルカリや酸などの添
加剤を定期的にめっき浴に添加し、それにより、めっき
浴成分を一定に維持するように努めている。ここで、添
加剤としては、金属塩には硫酸ニッケル等、還元剤には
次亜燐酸塩やジメチルアミンボラン等、錯化剤には酢酸
やクエン酸等、緩衝剤には酢酸やコハク酸等、pH調整用
アルカリにはアンモニア水等、酸には希硫酸等が使用さ
れる。添加剤の種類や添加頻度、添加量は、無電解めっ
きの種類の他、所望の成膜速度を勘案して設定した無電
解めっき浴温における化学反応、分解、蒸発等によるめ
っき浴成分の消耗量(変動)、pHの変動に応じて決定さ
れ、めっき浴成分は安定した性能の無電解めっき膜が得
られる濃度範囲に制御される。添加剤は水に混合溶解し
て水溶液状の添加剤(以降、液状添加剤という)とし、
これがめっき浴に添加される。これは、液状添加剤とす
ると、添加量等の管理が容易であること等の理由によ
る。この液状添加剤の濃度は、添加液量と蒸発量がバラ
ンスするように設定される。
Electroless plating is a plating utilizing a metal deposition phenomenon caused by a chemical reaction.
Not only is the metal ion species in the plating bath and the reducing agent involved in the precipitation reaction consumed, but also hydrogen gas is generated and the pH of the plating bath is changed. Therefore, in general, metal salts, reducing agents,
Additives such as complexing agents, buffers, alkalis and acids for pH adjustment are regularly added to the plating bath, thereby stabilizing the components of the plating bath. Here, as an additive, a metal salt such as nickel sulfate, a reducing agent such as hypophosphite or dimethylamine borane, a complexing agent such as acetic acid or citric acid, and a buffering agent such as acetic acid or succinic acid. Ammonia water or the like is used as an alkali for pH adjustment, and dilute sulfuric acid or the like is used as an acid. The type, frequency, and amount of the additives are determined by the type of electroless plating, and the consumption of plating bath components due to chemical reaction, decomposition, evaporation, etc. at the electroless plating bath temperature set in consideration of the desired film formation rate. It is determined according to the amount (fluctuation) and the fluctuation of pH, and the plating bath components are controlled to a concentration range in which an electroless plating film having stable performance can be obtained. The additive is mixed and dissolved in water to form an aqueous additive (hereinafter referred to as a liquid additive),
This is added to the plating bath. This is because, when a liquid additive is used, it is easy to control the addition amount and the like. The concentration of the liquid additive is set so that the amount of the added liquid and the amount of evaporation are balanced.

【0047】このとき、従来の大気開放下の90℃以下の
めっき浴が用いられる無電解めっき方法の場合において
は、蒸発によって失われるめっき浴量と液状添加剤の添
加量とがほぼバランスしている他、成膜速度が低いため
にめっき浴成分の変動が緩やかであり、そのため液状添
加剤添加の頻度が少なく、従って、長期間にわたって無
電解めっきする場合であっても、めっき浴及びその周辺
の状態維持に特別の工夫を要しない。
At this time, in the case of the conventional electroless plating method using a plating bath at 90 ° C. or lower under the open atmosphere, the amount of the plating bath lost by evaporation and the amount of the liquid additive are substantially balanced. In addition, the plating bath components fluctuate slowly due to the low film formation rate, so the frequency of liquid additive addition is low, and therefore, even when electroless plating is performed over a long period of time, the plating bath and its surroundings No special ingenuity is required to maintain the state of the.

【0048】これに対し、本発明に係る無電解めっき方
法の場合においては、成膜速度が極めて向上して高いた
めにめっき浴成分の変動速度が大きく、そのため単位時
間当たりの液状添加剤の添加量が増すこと、又、無電解
めっき浴が圧力容器や圧力空間内の如き外部と遮断され
た系内(閉じたスペース内)におかれているため、その
系内から系外へのめっき浴の散逸が抑制されることか
ら、長期間にわたって無電解めっきする場合には、液状
添加剤の添加量に伴ってめっき浴量が増し、最終的には
液状添加剤の添加ができず、めっき浴成分の維持ができ
なくなり、ひいては成膜速度及びめっき品質が不安定に
なる。
On the other hand, in the case of the electroless plating method according to the present invention, since the film forming rate is extremely improved and high, the fluctuation rate of the plating bath components is large, and therefore the addition of the liquid additive per unit time is required. Because the volume of the electroless plating bath is increased and the electroless plating bath is placed in a system (closed space) that is isolated from the outside such as in a pressure vessel or pressure space, the plating bath from the system to the outside of the system When electroless plating is performed over a long period of time, the amount of the plating bath increases with the addition amount of the liquid additive, and eventually the addition of the liquid additive cannot be performed. The components cannot be maintained, and as a result, the deposition rate and plating quality become unstable.

【0049】この対策を検討したところ、液状添加剤に
代えて粉末状薬剤(添加剤)を添加する方法や、浸透膜
の使用によってめっき浴成分濃度の調整をする場合に
は、めっき浴の再生機自体が複雑で高価なものになる等
の、設備上の問題が発生した。又、無電解めっき反応に
伴って発生した水素ガスの濃度が閉じたスペース内で次
第に高まり、長期間にわたる無電解めっきの場合には安
全上の問題が生じる可能性もあった。
After examining the countermeasures, when the method of adding a powdery agent (additive) in place of the liquid additive or adjusting the concentration of the plating bath component by using a permeable membrane, the plating bath is regenerated. Equipment problems, such as the machine itself becoming complicated and expensive, occurred. In addition, the concentration of hydrogen gas generated by the electroless plating reaction gradually increases in a closed space, and in the case of electroless plating for a long period of time, a safety problem may occur.

【0050】これに対し、無電解めっき浴の雰囲気圧力
中の蒸気分圧を調整して無電解めっき浴の蒸発量を制御
するようにすると、無電解めっき浴の蒸発量と液状添加
剤の添加量とをバランスさせることができ、そのため、
めっき浴量の支障ある増大を抑えることができ、液状添
加剤の添加の都度、該添加後のめっき浴量を常に問題の
ない量、例えば無電解めっき開始時のめっき浴量と同等
の一定量にし得ることが確認された。即ち、液状添加剤
の添加の都度、液状添加剤の添加後のめっき浴量が問題
のない量になる程度に、該添加剤の添加前に無電解めっ
き浴の雰囲気圧力中の蒸気分圧を調整して無電解めっき
浴の蒸発量を制御し、めっき浴量を調整しておけば、め
っき浴量の支障ある増大を招くことなく、液状添加剤を
添加することができることが確認された。
On the other hand, by adjusting the vapor partial pressure in the atmosphere pressure of the electroless plating bath to control the evaporation amount of the electroless plating bath, the evaporation amount of the electroless plating bath and the addition of the liquid additive are controlled. Quantity and balance, so
Each time the liquid additive is added, the amount of the plating bath after the addition can be suppressed without any problem, for example, a fixed amount equal to the amount of the plating bath at the start of electroless plating. It was confirmed that it could be. That is, each time the liquid additive is added, the partial pressure of the vapor in the atmosphere pressure of the electroless plating bath is adjusted before the addition of the liquid additive so that the amount of the plating bath after the addition of the liquid additive becomes a problem-free amount. It has been confirmed that the liquid additive can be added without adjusting the amount of the plating bath by adjusting the amount of evaporation of the electroless plating bath and adjusting the amount of the plating bath.

【0051】従って、無電解めっき浴の雰囲気圧力中の
蒸気分圧を調整して無電解めっき浴の蒸発量を制御する
ようにすると、長期間にわたって無電解めっきする場合
であっても、めっき浴量の支障ある増大を招くことな
く、液状添加剤を必要時に必要量添加することができ、
そのため、めっき浴成分の維持ができ、ひいては無電解
めっきの成膜速度及びめっき品質を安定させることがで
きる(第6発明)。
Therefore, when the vapor partial pressure in the atmosphere pressure of the electroless plating bath is adjusted to control the amount of evaporation of the electroless plating bath, even when the electroless plating is performed for a long period of time, the plating bath The required amount of the liquid additive can be added when needed, without inducing a troublesome increase in the amount,
Therefore, the components of the plating bath can be maintained, and the film formation rate and plating quality of electroless plating can be stabilized (sixth invention).

【0052】かかる無電解めっき浴の雰囲気圧力中の蒸
気分圧の調整による無電解めっき浴の蒸発量の制御は、
例えば次のような方法により行う。
The control of the evaporation amount of the electroless plating bath by adjusting the vapor partial pressure in the atmosphere pressure of the electroless plating bath is as follows.
For example, the following method is used.

【0053】無電解めっき浴の雰囲気中に圧縮空気等の
ガスを導入すると共に無電解めっき浴の雰囲気(即ち蒸
気含有ガス)中から蒸気含有ガスの一部を外部へ排気す
る方法(以降、ガス導入・排気法という)により行う。
ここで、ガスの導入を行うのは、無電解めっき浴の雰囲
気圧力P1を無電解めっき浴の飽和蒸気圧P2と同等以上の
圧力に保持するためである。即ち、蒸気含有ガスの排気
を行うだけでは、無電解めっき浴の蒸気分圧を下げて蒸
発量を高め、めっき浴量の支障ある増大を防止すること
はできても、無電解めっき浴の雰囲気圧力P1を無電解め
っき浴の飽和蒸気圧P2と同等以上の圧力に維持すること
ができなくなるからである。
A method in which a gas such as compressed air is introduced into the atmosphere of the electroless plating bath and a part of the vapor-containing gas is exhausted from the atmosphere of the electroless plating bath (ie, the vapor-containing gas) (hereinafter referred to as gas (Referred to as the introduction and exhaust method).
Here, the introduction of the gas is to hold the ambient pressure P 1 of the electroless plating bath to the saturation vapor pressure P 2 equal to or higher than the pressure of the electroless plating bath. In other words, by merely exhausting the vapor-containing gas, it is possible to lower the vapor partial pressure of the electroless plating bath to increase the amount of evaporation and prevent a troublesome increase in the amount of the plating bath. it is because it becomes impossible to maintain the pressure P 1 in the saturated vapor pressure P 2 equal to or higher than the pressure of the electroless plating bath.

【0054】また、別の方法として、無電解めっき浴の
雰囲気中に冷却された蒸気捕集板を設けて蒸気を捕集す
る方法(以降、蒸気冷却捕集法という)により行う。
As another method, a method of providing a cooled steam collecting plate in an atmosphere of an electroless plating bath to collect steam (hereinafter, referred to as a steam cooling collecting method) is employed.

【0055】前記ガス導入・排気法は、第4発明に係る
装置の圧力容器内へ気体を導入する気体導入管と、該圧
力容器内の蒸気を該圧力容器外へ放出する排気管とを設
けた無電解めっき装置(第7発明)や、第5発明に係る
装置の圧力空間内へ気体を導入する気体導入管と、該圧
力空間内の蒸気を該圧力空間外へ放出する排気管とを設
けた無電解めっき装置(第8発明)を用いることによ
り、行うことができる。前記蒸気冷却捕集法は、第5発
明に係る装置の圧力空間内に冷却された蒸気捕集板を設
けた装置により、行うことができる。
In the gas introducing / exhausting method, a gas introducing pipe for introducing gas into the pressure vessel of the apparatus according to the fourth invention and an exhaust pipe for discharging vapor in the pressure vessel to the outside of the pressure vessel are provided. A gas introduction pipe for introducing gas into the pressure space of the electroless plating apparatus (seventh invention) or the apparatus according to the fifth invention, and an exhaust pipe for discharging vapor in the pressure space to the outside of the pressure space. It can be performed by using the provided electroless plating apparatus (the eighth invention). The vapor cooling and collecting method can be performed by a device having a cooled vapor collecting plate in a pressure space of the device according to the fifth invention.

【0056】上記第7発明に係る無電解めっき装置の例
を図3に示す。本無電解めっき装置は、無電解めっき槽
(圧力容器)21に、無電解めっき浴22の加熱手段である
温度調節器付きヒータ23を設け、更に、無電解めっき浴
22の上の雰囲気24に圧縮空気を導入する配管25及び雰囲
気24を排気する圧力調整弁付き排気管26を設けたもので
ある。
FIG. 3 shows an example of the electroless plating apparatus according to the seventh aspect of the present invention. In the present electroless plating apparatus, a heater 23 with a temperature controller, which is a heating means for an electroless plating bath 22, is provided in an electroless plating tank (pressure vessel) 21.
A pipe 25 for introducing compressed air to an atmosphere 24 above the pipe 22 and an exhaust pipe 26 with a pressure regulating valve for exhausting the atmosphere 24 are provided.

【0057】尚、図3に示す装置においては液状添加剤
導入管27を設けているが、かかる導入管27を設けずに圧
縮空気導入管25で代用してもよく、又、めっき槽21に配
管を介してめっき浴再生機を接続し、該再生機にて添加
剤の添加を行うことも可能である。
Although the liquid additive introduction pipe 27 is provided in the apparatus shown in FIG. 3, the compressed air introduction pipe 25 may be substituted without providing the introduction pipe 27, and the plating tank 21 It is also possible to connect a plating bath regenerator via piping and add the additive in the regenerator.

【0058】通常の無電解めっき装置では空気バブリン
グによってめっき浴の攪拌を行うことがあるが、本無電
解めっき装置でも図3に示す如く圧縮空気を供給するバ
ブリング管28を設けてもよい。このバブリング管28によ
って導入された圧縮空気は無電解めっき浴22中を上昇し
て雰囲気24に至り、圧縮空気導入管25によって導入され
た圧縮空気と同様の効果をもたらすが、バブリング量は
成膜速度に影響する因子であり、バブリング管28に導入
される圧縮空気量は一定に維持されるべきであるため
に、バブリング管28を設ける場合においても圧縮空気導
入管25は独立して設けた方がよい。
In a usual electroless plating apparatus, the plating bath may be agitated by air bubbling. However, the present electroless plating apparatus may be provided with a bubbling tube 28 for supplying compressed air as shown in FIG. The compressed air introduced by the bubbling tube 28 rises in the electroless plating bath 22 to reach the atmosphere 24 and has the same effect as the compressed air introduced by the compressed air introduction tube 25, but the amount of bubbling is reduced. Since it is a factor that affects the speed and the amount of compressed air introduced into the bubbling tube 28 should be kept constant, even when the bubbling tube 28 is provided, it is preferable to provide the compressed air introduction tube 25 independently. Is good.

【0059】また、通常の無電解めっき装置では多くの
場合に濾過機が接続されているが、本無電解めっき装置
においても濾過機を接続してめっき浴22を循環濾過して
もよい。
Although a filter is connected in many cases in a normal electroless plating apparatus, a filter may be connected in the present electroless plating apparatus to filter the plating bath 22 by circulation.

【0060】本無電解めっき装置によれば、ガス導入・
排気法により、無電解めっき浴の雰囲気圧力P1を無電解
めっき浴の飽和蒸気圧P2と同等以上の圧力に維持しつ
つ、無電解めっき浴の雰囲気圧力中の蒸気分圧の調整に
よる無電解めっき浴の蒸発量の制御をし得、めっき浴量
を適正量に調整することができる。更に、無電解めっき
中に発生する水素が圧力容器21もしくは圧力空間中に徐
々に蓄積される問題についても、蓄積される水素量を問
題のない微量に抑制することが可能である。
According to the present electroless plating apparatus, gas introduction and
By the exhaust method, while maintaining the atmospheric pressure P 1 of the electroless plating bath to the saturation vapor pressure P 2 equal to or higher than the pressure of the electroless plating bath, free by adjusting the partial vapor pressure in the atmosphere pressure of the electroless plating bath The evaporation amount of the electrolytic plating bath can be controlled, and the plating bath amount can be adjusted to an appropriate amount. Further, with respect to the problem that hydrogen generated during electroless plating is gradually accumulated in the pressure vessel 21 or the pressure space, it is possible to suppress the amount of accumulated hydrogen to a small amount without any problem.

【0061】前記蒸気冷却捕集法を適用するための無電
解めっき装置の例を図4に示す。本無電解めっき装置
は、圧力部屋(圧力空間)V内の無電解めっき槽(上部
に開口部を有する容器)31に、無電解めっき浴32の加熱
手段である温度調節器付きヒータ33を設け、又、無電解
めっき浴32の上の雰囲気34に圧縮空気を導入する圧力調
整弁付き配管35を設け、更に、圧力部屋Vを形成する容
器38の内壁に蒸気捕集板36を設けたものである。この蒸
気捕集板36には冷却水を循環させ、それにより蒸気捕集
板36を冷却することができるようになっている。
FIG. 4 shows an example of an electroless plating apparatus to which the above-mentioned vapor cooling collection method is applied. In the present electroless plating apparatus, a heater 33 with a temperature controller, which is a heating means for an electroless plating bath 32, is provided in an electroless plating tank (a container having an opening at the top) 31 in a pressure chamber (pressure space) V. A pipe 35 with a pressure regulating valve for introducing compressed air into an atmosphere 34 above an electroless plating bath 32, and a vapor collecting plate 36 provided on an inner wall of a container 38 forming a pressure chamber V. It is. Cooling water is circulated through the steam collecting plate 36, so that the steam collecting plate 36 can be cooled.

【0062】尚、図4に示す装置においては液状添加剤
導入管37を設けているが、かかる導入管37を接続せずに
圧縮空気導入管35で代用してもよく、又、めっき槽31に
配管を介してめっき浴再生機を接続し、該再生機にて添
加剤の添加を行うことも可能である。又、濾過機を接続
してめっき浴32を循環濾過してもよい。
Although the liquid additive introduction pipe 37 is provided in the apparatus shown in FIG. 4, the compressed air introduction pipe 35 may be used instead of connecting the liquid additive introduction pipe 37. It is also possible to connect a plating bath regenerator through a pipe and add the additive in the regenerator. Alternatively, a plating machine may be connected to perform circulating filtration of the plating bath 32.

【0063】本無電解めっき装置によれば、蒸気冷却捕
集法により、無電解めっき浴の雰囲気圧力中の蒸気分圧
の調整による無電解めっき浴の蒸発量の制御をし得、め
っき浴量を適正量に調整することができる。雰囲気圧力
中の蒸気分圧を下げる場合には、蒸気捕集板36に冷却水
を流して蒸気捕集板36の表面温度を下げ、雰囲気圧力中
の蒸気分圧を上げる場合には、冷却水による冷却を停止
することによって、或いは更に必要であれば予備ヒータ
により加熱することによって、蒸気捕集板36の表面温度
を上げる。蒸気捕集板36により冷却された蒸気は、液体
となって容器38の底部に溜まり、無電解めっき浴32及び
その上の雰囲気34よりなる系から除外される。
According to the present electroless plating apparatus, the evaporation amount of the electroless plating bath can be controlled by adjusting the partial pressure of steam in the atmosphere pressure of the electroless plating bath by the steam cooling collection method. Can be adjusted to an appropriate amount. When lowering the partial pressure of the steam under the atmospheric pressure, the cooling water is supplied to the steam collecting plate 36 to lower the surface temperature of the steam collecting plate 36, and when increasing the partial pressure of the steam under the atmospheric pressure, the cooling water is used. The surface temperature of the vapor collecting plate 36 is increased by stopping the cooling by the steam collecting plate 36 or, if necessary, by heating with a preliminary heater. The vapor cooled by the vapor collecting plate 36 becomes a liquid and accumulates at the bottom of the container 38, and is excluded from the system including the electroless plating bath 32 and the atmosphere 34 thereon.

【0064】第7発明に係る無電解めっき装置のより具
体的な例を図8に示す。図8において、41はめっき槽外
槽、42は開閉蓋、44はクランプ、45はパッキンを示すも
のである。47はモータ、46はモータ47の回転により連動
するギア、54はギア46により連動する回転シャフトを示
すものであり、該回転シャフト54に被めっき材(図示し
ていない)が取り付けられる。55はギア46及び回転シャ
フト54等から構成されるラックを示すものである。52は
バブリング管、51はヒータ、50はヒータ51に接続された
通電部を示すものである。53はめっき浴調整液導入部、
49は循環濾過機配管を示すものであり、該配管49には循
環濾過機(図示していない)が接続されている。48は圧
縮空気導入部、60は排気管、43は該排気管60に接続され
た背圧弁を示すものである。
FIG. 8 shows a more specific example of the electroless plating apparatus according to the seventh invention. 8, reference numeral 41 denotes a plating tank outer tank, 42 denotes an opening / closing lid, 44 denotes a clamp, and 45 denotes a packing. Reference numeral 47 denotes a motor, 46 denotes a gear interlocked by the rotation of the motor 47, and 54 denotes a rotating shaft interlocked by the gear 46. A plating target material (not shown) is attached to the rotating shaft 54. Reference numeral 55 denotes a rack including the gear 46, the rotating shaft 54, and the like. Reference numeral 52 denotes a bubbling tube, 51 denotes a heater, and 50 denotes a power supply unit connected to the heater 51. 53 is a plating bath adjusting solution introduction section,
Reference numeral 49 denotes a circulation filter pipe, and a circulation filter (not shown) is connected to the pipe 49. Reference numeral 48 denotes a compressed air introduction unit, 60 denotes an exhaust pipe, and 43 denotes a back pressure valve connected to the exhaust pipe 60.

【0065】第8発明に係る無電解めっき装置のより具
体的な例を図9に示す。図9において、58は圧力部屋、
56は該圧力部屋58内上部の内壁近傍に設けられた冷却
板、57は該冷却板56に冷却水を循環させるための冷却水
配管、51は冷却板56に取り付けられたヒータ、50は該ヒ
ータ51に接続された通電部、59は冷却板56から圧力部屋
58の底部の凹状部に落ちて溜まった液体等を圧力部屋58
外へ排出するための排水配管を示すものである。その他
の符番については、前述の図8の場合と同様である。
FIG. 9 shows a more specific example of the electroless plating apparatus according to the eighth invention. In FIG. 9, 58 is a pressure chamber,
56 is a cooling plate provided in the vicinity of the inner wall in the upper part of the pressure chamber 58, 57 is a cooling water pipe for circulating cooling water to the cooling plate 56, 51 is a heater attached to the cooling plate 56, 50 is The energization section connected to the heater 51, 59 is a pressure chamber from the cooling plate 56
The liquid, etc., which has fallen into the concave portion at the bottom of
It shows a drainage pipe for discharging to the outside. The other reference numerals are the same as those in FIG.

【0066】[0066]

【実施例】【Example】

(実施例1)前述の図1及び2と同様の無電解めっき装
置を用いて無電解Ni−Pめっきを行った。このとき、
無電解めっき液としては、市販の無電解Ni−Pめっき
薬剤を調合したもの(成膜後のめっき膜のP含有量:1
1.5%)を用いた。尚、この調合後のものは、硫酸ニッ
ケル:20g/dm3、次亜りん酸ソーダ:20g/dm3、酢酸ソー
ダ:10g/dm3、クエン酸ソーダ:10g/dm3を含む水溶液であ
る。被めっき材としては、磁気ディスク用アルミニウム
(Al−4%Mg)合金板にダブルジンケート処理を施した
ものを用いた。そして、無電解Ni−Pめっき浴の温
度、該無電解めっき浴の雰囲気圧力をパラメータとして
変化させ、めっき速度をめっき前後の質量変化より求め
た。
Example 1 Electroless Ni-P plating was performed using the same electroless plating apparatus as in FIGS. 1 and 2 described above. At this time,
As the electroless plating solution, a mixture of a commercially available electroless Ni-P plating agent (P content of the plated film after film formation: 1)
1.5%). Incidentally, those after the preparation, nickel sulfate: 20 g / dm 3, hypophosphite soda: 20 g / dm 3, sodium acetate: 10 g / dm 3, sodium citrate: an aqueous solution containing 10 g / dm 3. As a material to be plated, an aluminum (Al-4% Mg) alloy plate for a magnetic disk which was subjected to a double zincate treatment was used. The temperature of the electroless Ni-P plating bath and the atmospheric pressure of the electroless plating bath were varied as parameters, and the plating rate was determined from the change in mass before and after plating.

【0067】その結果を表1に示す。本発明の実施例に
係る方法(No.2〜6)による場合は、大気圧下で無電解N
i−Pめっき浴の温度を90℃とした比較例の場合(No.
1)に比べ、めっき速度が極めて高速である。即ち、比
較例の場合(No.1)の成膜速度に比較し、本発明の実施
例の場合(No.2〜6)の成膜速度は無電解Ni−Pめっき
浴の温度を100 ℃としたときで約2倍、110 ℃としたと
きで約5倍、120 ℃としたときで約10倍に向上してい
る。尚、いずれの場合も、無電解Ni−Pめっき浴の沸
騰現象を呈さず、ミスト発生及びめっき浴の蒸発等とい
う支障を生じることなく、無電解Ni−Pめっきをする
ことができた。
Table 1 shows the results. In the case of the method according to the embodiment of the present invention (Nos. 2 to 6), electroless N
In the case of the comparative example in which the temperature of the IP plating bath was 90 ° C. (No.
The plating speed is extremely high compared to 1). That is, as compared with the film forming rate in the comparative example (No. 1), the film forming rate in the example of the present invention (No. 2 to 6) is set at a temperature of the electroless Ni—P plating bath of 100 ° C. Approximately 2 times at 110 ° C., approximately 5 times at 110 ° C., and approximately 10 times at 120 ° C. In each case, the electroless Ni-P plating could be performed without exhibiting the boiling phenomenon of the electroless Ni-P plating bath and without causing problems such as generation of mist and evaporation of the plating bath.

【0068】(実施例2)無電解めっき液として、市販
の無電解Ni−Pめっき薬剤をベースに硫酸銅を添加し
調合したもの(成膜後めっき膜のNi量:52%、Cu量:41
%、P量:7%)を用い、被めっき材として実施例1の
場合と同様のものを用い、実施例1の場合と同様の無電
解めっき装置を用いて無電解Ni−Cu−Pめっきを行
った。そして、めっき速度を実施例1の場合と同様の方
法により測定した。
Example 2 An electroless plating solution prepared by adding copper sulfate based on a commercially available electroless Ni-P plating agent (Ni content of plated film after film formation: 52%, Cu content: 41
%, P content: 7%), and the same material as in Example 1 was used as the material to be plated, and electroless Ni-Cu-P plating was performed using the same electroless plating apparatus as in Example 1. Was done. Then, the plating rate was measured in the same manner as in Example 1.

【0069】その結果を表2に示す。本発明の実施例に
係る方法による場合〔無電解Ni-Cu-Pめっき浴の温度:
110 ℃、該めっき浴の雰囲気圧力:3atm (0.3 MPa)〕
は、比較例(無電解Ni−Cu−Pめっき浴の温度:80
℃、大気圧下)の場合に比べ、めっき速度が10倍に向上
し、極めて高速である。尚、いずれの場合も、めっき浴
の沸騰現象を呈さず、ミスト発生及びめっき浴の蒸発等
という支障を生じなかった。
Table 2 shows the results. According to the method according to the embodiment of the present invention [Temperature of electroless Ni-Cu-P plating bath:
110 ° C, atmospheric pressure of the plating bath: 3 atm (0.3 MPa)]
Is a comparative example (temperature of electroless Ni-Cu-P plating bath: 80
(° C, under atmospheric pressure), the plating rate is 10 times higher and extremely high. In any case, no boiling phenomenon of the plating bath was exhibited, and no troubles such as generation of mist and evaporation of the plating bath occurred.

【0070】[0070]

【表1】 [Table 1]

【0071】[0071]

【表2】 [Table 2]

【0072】[0072]

【表3】 [Table 3]

【0073】[0073]

【表4】 [Table 4]

【0074】(実施例3)無電解めっき液として硫酸ニ
ッケル、水酸化ナトリウム、エチレンジアミンをベース
にテトラヒドロホウ酸ナトリウム等を添加・調合したも
の(成膜後めっき膜のB量:5%)を用い、被めっき材
としてAl合金(A7075 合金)板にダブルジンケート処理
を施したものを用い、実施例1の場合と同様の無電解め
っき装置を用いて無電解Ni−Bめっきを行った。そし
て、めっき速度を実施例1の場合と同様の方法により測
定した。
(Example 3) As an electroless plating solution, a mixture of nickel sulfate, sodium hydroxide, ethylenediamine and the like to which sodium tetrahydroborate was added and blended (B content of plated film after film formation: 5%) was used. An Al alloy (A7075 alloy) plate subjected to double zincate treatment was used as a material to be plated, and electroless Ni-B plating was performed using the same electroless plating apparatus as in Example 1. Then, the plating rate was measured in the same manner as in Example 1.

【0075】その結果を表3に示す。本発明の実施例に
係る方法による場合〔無電解Ni−Bめっき浴の温度:10
5 ℃、該めっき浴の雰囲気圧力:2atm (0.2 MPa)〕
は、比較例(無電解Ni−Bめっき浴の温度:90℃、大気
圧下)の場合に比べ、めっき速度が約5倍に向上し、極
めて高速である。尚、いずれの場合も、めっき浴の沸騰
現象を呈さず、ミスト発生及びめっき浴の蒸発等という
支障を生じなかった。
Table 3 shows the results. In the case of the method according to the embodiment of the present invention [Temperature of electroless Ni-B plating bath: 10
5 ° C, atmospheric pressure of the plating bath: 2 atm (0.2 MPa)]
The plating speed is about 5 times higher than that of the comparative example (temperature of the electroless Ni-B plating bath: 90 ° C. under atmospheric pressure), and is extremely high. In any case, no boiling phenomenon of the plating bath was exhibited, and no troubles such as generation of mist and evaporation of the plating bath occurred.

【0076】(実施例4)本発明の実施例として、前述
の図3及び4と同様の無電解めっき装置を用いて無電解
Ni−Pめっきを行った。このとき、無電解めっき液及
び被めっき材としては、実施例1と同様のものを用い
た。そして、無電解めっき浴の雰囲気圧力中の蒸気分圧
を調整して無電解めっき浴の蒸発量を制御し、又、予め
実験的に求めておいた成膜速度に応じて液状添加剤を定
期的に添加して、無電解Ni−Pめっきを延べ7時間行
い、めっき浴量及びめっき浴のpHの変化を調査した。
又、無電解Ni−Pめっき成膜速度及びめっき性能(め
っき膜の性能)に大きな影響を及ぼすめっき中のP量の
変化を調査した。その結果を図5〜6、及び、表4の実
施例の欄に示す。尚、上記液状添加剤としては、市販の
無電解Ni−Pめっき薬剤に付属の液状添加剤を用い
た。
Example 4 As an example of the present invention, electroless Ni-P plating was performed using the same electroless plating apparatus as in FIGS. At this time, the same electroless plating solution and plating material as in Example 1 were used. Then, the vapor partial pressure in the atmosphere pressure of the electroless plating bath is adjusted to control the evaporation amount of the electroless plating bath, and the liquid additive is periodically added in accordance with the film formation rate experimentally obtained in advance. And electroless Ni-P plating was performed for a total of 7 hours, and changes in the plating bath volume and the pH of the plating bath were investigated.
In addition, a change in the amount of P during plating, which has a significant effect on the electroless Ni-P plating film formation rate and plating performance (performance of the plating film), was investigated. The results are shown in FIGS. 5 and 6 and in the column of Example in Table 4. As the liquid additive, a liquid additive attached to a commercially available electroless Ni-P plating agent was used.

【0077】一方、無電解めっき浴の雰囲気圧力中の蒸
気分圧の調整による無電解めっき浴の蒸発量の制御をせ
ず、この点を除き上記実施例4と同様の方法、条件によ
り無電解Ni−Pめっきを行い、同様の調査を行った。
その結果を図7、及び、表4の比較例の欄に示す。
On the other hand, the amount of evaporation of the electroless plating bath was not controlled by adjusting the partial pressure of the vapor in the atmosphere pressure of the electroless plating bath. Ni-P plating was performed, and the same investigation was performed.
The results are shown in FIG. 7 and the column of Comparative Example in Table 4.

【0078】比較例に係る方法(蒸気分圧制御せず)の
場合には、図7からわかる如く、経時的にめっき浴量が
増大すると共にめっき浴のpHも上昇する。一般的には、
無電解Ni−Pめっき浴のpH管理範囲は目標管理値±0.
2 以内であるが、めっき開始後4時間後にはpHがpH管理
範囲を超えている。又、めっき浴のpHが上昇した影響
で、表4の比較例の欄に示す如く、成膜速度の上方への
ばらつきが大きくなり、更には、めっき中のP量が低下
し、ばらつき範囲も拡大している。
In the case of the method according to the comparative example (without controlling the steam partial pressure), as can be seen from FIG. 7, the plating bath volume increases with time and the plating bath pH also increases. In general,
The pH control range of the electroless Ni-P plating bath is the target control value ± 0.
Within 2 hours, the pH exceeded the pH control range 4 hours after the start of plating. In addition, due to the effect of the increase in the pH of the plating bath, as shown in the column of Comparative Example in Table 4, the upward variation in the film forming rate became large, and further, the P amount during plating decreased, and the variation range was also reduced. It is expanding.

【0079】これに対して、本発明の実施例に係る方法
の場合には、図5〜6に示す如く、めっき浴量及びめっ
き浴のpHの経時的変化は無視できる程度に小さく、無電
解めっき浴の雰囲気圧力中の蒸気分圧の調整による無電
解めっき浴の蒸発量の制御によってめっき浴量及びめっ
き浴のpHを安定して維持できることがわかる。又、表4
の実施例の欄に示す如く、成膜速度及びめっき中のP量
が安定している。
On the other hand, in the case of the method according to the embodiment of the present invention, as shown in FIGS. It can be seen that the amount of the plating bath and the pH of the plating bath can be stably maintained by controlling the evaporation amount of the electroless plating bath by adjusting the vapor partial pressure in the atmosphere pressure of the plating bath. Table 4
As shown in the column of Examples, the film formation rate and the P content during plating are stable.

【0080】上記結果は無電解Ni−Pめっきの場合の
ものであるが、他の無電解めっきの場合にも、同様の傾
向の結果が得られた。
The above results are for electroless Ni-P plating, but similar results were obtained for other electroless plating.

【0081】[0081]

【発明の効果】本発明によれば、ミスト発生及びめっき
浴の蒸発等という支障を生じることなく、95℃超の温度
で無電解めっきすることができ、そのため、従来の無電
解めっき技術の場合に比較して無電解めっきの成膜速度
を著しく向上し得、ひいては生産性を大幅に向上し得る
ようになる。
According to the present invention, it is possible to perform electroless plating at a temperature higher than 95 ° C. without causing problems such as generation of mist and evaporation of a plating bath. As compared with the method described above, the film formation rate of electroless plating can be remarkably improved, and the productivity can be greatly improved.

【図面の簡単な説明】[Brief description of the drawings]

【図1】 本発明に係る無電解めっき装置の一例を説明
する図である。
FIG. 1 is a diagram illustrating an example of an electroless plating apparatus according to the present invention.

【図2】 本発明に係る無電解めっき装置の一例を説明
する図である。
FIG. 2 is a diagram illustrating an example of an electroless plating apparatus according to the present invention.

【図3】 本発明に係る無電解めっき装置の一例を説明
する図である。
FIG. 3 is a diagram illustrating an example of an electroless plating apparatus according to the present invention.

【図4】 本発明に係る無電解めっき装置の一例を説明
する図である。
FIG. 4 is a diagram illustrating an example of an electroless plating apparatus according to the present invention.

【図5】 実施例4に係るめっき時間とめっき浴容積及
びpHとの関係を示す図である。
FIG. 5 is a diagram showing a relationship between a plating time, a plating bath volume, and a pH according to Example 4.

【図6】 実施例4に係るめっき時間とめっき浴容積及
びpHとの関係を示す図である。
FIG. 6 is a diagram showing the relationship between plating time, plating bath volume and pH according to Example 4.

【図7】 比較例に係るめっき時間とめっき浴容積及び
pHとの関係を示す図である。
FIG. 7 shows a plating time and a plating bath volume according to a comparative example;
It is a figure which shows the relationship with pH.

【図8】 本発明に係る無電解めっき装置の一例を説明
する図である。
FIG. 8 is a diagram illustrating an example of an electroless plating apparatus according to the present invention.

【図9】 本発明に係る無電解めっき装置の一例を説明
する図である。
FIG. 9 is a diagram illustrating an example of an electroless plating apparatus according to the present invention.

【符号の説明】[Explanation of symbols]

1--圧力容器、2--冷却器、3--再生器、4--ろ過器、
5--貯水槽、6--圧力ポンプ、7--加熱器、8--貯水
槽、9--加熱器、10--めっき槽、11--冷却器、12--再生
器、13--ろ過器、21--無電解めっき槽(圧力容器)、22
--無電解めっき浴、23--ヒータ、24--雰囲気、25--圧縮
空気導入管、26--排気管、27--液状添加剤導入管、28--
バブリング管、31--無電解めっき槽、32--無電解めっき
浴、33--ヒータ、34--雰囲気、35--圧縮空気導入管、36
--蒸気捕集板、37--液状添加剤導入管、38--容器、P--
ガス導入口、V--圧力部屋(圧力空間)、41--めっき槽
外槽、42--開閉蓋、43--背圧弁、44--クランプ、45--パ
ッキン、46--ギア、47--モータ、48--圧縮空気導入部、
49--循環濾過機配管、50--通電部、51--ヒータ、52--バ
ブリング管、53--めっき浴調整液導入部、54--回転シャ
フト、55--ラック、56--冷却板、57--冷却水配管、58--
圧力部屋、59--排水配管、60--排気管。
1-pressure vessel, 2-cooler, 3-regenerator, 4-filter,
5-water tank, 6-pressure pump, 7-heater, 8-water tank, 9-heater, 10-plating tank, 11-cooler, 12-regenerator, 13- -Filter, 21--Electroless plating tank (pressure vessel), 22
--Electroless plating bath, 23--Heater, 24--Atmosphere, 25--Compressed air inlet, 26--Exhaust, 27--Liquid additive inlet, 28--
Bubbling tube, 31--electroless plating bath, 32--electroless plating bath, 33--heater, 34--atmosphere, 35--compressed air inlet tube, 36
--Vapor collecting plate, 37--Liquid additive introduction pipe, 38--Container, P--
Gas inlet, V--pressure chamber (pressure space), 41--plating tank outer tank, 42--open / close lid, 43--back pressure valve, 44--clamp, 45--packing, 46--gear, 47 --Motor, 48--Compressed air inlet,
49--Circulation filter piping, 50--Electrification section, 51--Heater, 52--Bubbling pipe, 53--Plating bath adjusting solution introduction section, 54--Rotating shaft, 55--Rack, 56--Cooling Board, 57--cooling water piping, 58--
Pressure chamber, 59--drain pipe, 60--exhaust pipe.

───────────────────────────────────────────────────── フロントページの続き (72)発明者 佐藤 元治 兵庫県神戸市西区高塚台1丁目5番5号 株式会社神戸製鋼所神戸総合技術研究所内 ────────────────────────────────────────────────── ─── Continued on the front page (72) Inventor Motoharu Sato 1-5-5 Takatsukadai, Nishi-ku, Kobe-shi, Hyogo Kobe Steel, Ltd. Kobe Research Institute

Claims (8)

【特許請求の範囲】[Claims] 【請求項1】 無電解めっきするに際し、無電解めっき
浴の温度を95℃超の温度にすると共に、該無電解めっき
浴の雰囲気圧力を該無電解めっき浴の飽和蒸気圧と同等
以上の圧力にすることを特徴とする無電解めっき方法。
In the electroless plating, the temperature of the electroless plating bath is set to a temperature exceeding 95 ° C., and the atmospheric pressure of the electroless plating bath is set to a pressure equal to or higher than the saturated vapor pressure of the electroless plating bath. An electroless plating method characterized by:
【請求項2】 前記無電解めっき浴が、前記無電解めっ
き浴の雰囲気圧力に耐える圧力容器の内部に入れられて
いる請求項1記載の無電解めっき方法。
2. The electroless plating method according to claim 1, wherein the electroless plating bath is placed inside a pressure vessel that can withstand the atmospheric pressure of the electroless plating bath.
【請求項3】 前記無電解めっき浴が、前記無電解めっ
き浴の雰囲気圧力と同一圧の空気あるいはガスが含まれ
た圧力空間におかれている請求項1記載の無電解めっき
方法。
3. The electroless plating method according to claim 1, wherein the electroless plating bath is placed in a pressure space containing air or gas at the same pressure as the atmospheric pressure of the electroless plating bath.
【請求項4】 無電解めっき槽と無電解めっき浴を加熱
する手段とを有する無電解めっき装置において、前記無
電解めっき槽が圧力容器により形成されていることを特
徴とする無電解めっき装置。
4. An electroless plating apparatus having an electroless plating tank and a means for heating the electroless plating bath, wherein the electroless plating tank is formed by a pressure vessel.
【請求項5】 無電解めっき槽と無電解めっき浴を加熱
する手段とを有する無電解めっき装置において、前記無
電解めっき槽が上部に開口部を有する容器により形成さ
れ、該容器が圧力空間に配されていることを特徴とする
無電解めっき装置。
5. An electroless plating apparatus having an electroless plating bath and a means for heating the electroless plating bath, wherein the electroless plating bath is formed by a container having an opening at an upper part, and the container is formed in a pressure space. An electroless plating apparatus characterized by being arranged.
【請求項6】 前記無電解めっき浴の雰囲気圧力中の蒸
気分圧を調整して無電解めっき浴の蒸発量を制御する請
求項1、2又は3記載の無電解めっき方法。
6. The electroless plating method according to claim 1, wherein an evaporation amount of the electroless plating bath is controlled by adjusting a partial pressure of steam in the atmosphere pressure of the electroless plating bath.
【請求項7】 前記圧力容器内へ気体を導入する気体導
入管と、該圧力容器内の蒸気を該圧力容器外へ放出する
排気管とを有する請求項4記載の無電解めっき装置。
7. The electroless plating apparatus according to claim 4, further comprising a gas introduction pipe for introducing gas into the pressure vessel, and an exhaust pipe for discharging vapor in the pressure vessel to outside the pressure vessel.
【請求項8】 前記圧力空間内へ気体を導入する気体導
入管と、該圧力空間内の蒸気を該圧力空間外へ放出する
排気管とを有する請求項5記載の無電解めっき装置。
8. The electroless plating apparatus according to claim 5, further comprising a gas introduction pipe for introducing a gas into the pressure space, and an exhaust pipe for discharging steam in the pressure space to the outside of the pressure space.
JP4348397A 1996-08-22 1997-02-27 Electroless plating method and device Pending JPH10121256A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4348397A JPH10121256A (en) 1996-08-22 1997-02-27 Electroless plating method and device

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP22109396 1996-08-22
JP8-221093 1996-08-22
JP4348397A JPH10121256A (en) 1996-08-22 1997-02-27 Electroless plating method and device

Publications (1)

Publication Number Publication Date
JPH10121256A true JPH10121256A (en) 1998-05-12

Family

ID=26383257

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4348397A Pending JPH10121256A (en) 1996-08-22 1997-02-27 Electroless plating method and device

Country Status (1)

Country Link
JP (1) JPH10121256A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005501964A (en) * 2001-08-31 2005-01-20 マクダーミド・インコーポレーテツド Electroless nickel plating solution and use thereof
US8128987B2 (en) * 2002-03-22 2012-03-06 Lam Research Corp. Apparatus and method for electroless deposition of materials on semiconductor substrates
CN103103507A (en) * 2011-11-15 2013-05-15 夏普株式会社 Control method and control device for liquid amount, manufacturing method for semiconductor integrated circuit, control program, and readable recording medium

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005501964A (en) * 2001-08-31 2005-01-20 マクダーミド・インコーポレーテツド Electroless nickel plating solution and use thereof
US8128987B2 (en) * 2002-03-22 2012-03-06 Lam Research Corp. Apparatus and method for electroless deposition of materials on semiconductor substrates
CN103103507A (en) * 2011-11-15 2013-05-15 夏普株式会社 Control method and control device for liquid amount, manufacturing method for semiconductor integrated circuit, control program, and readable recording medium
JP2013104112A (en) * 2011-11-15 2013-05-30 Sharp Corp Volume control method and volume control device, manufacturing method of semiconductor integrated circuit, control program, and readable storage medium

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