JPH10102237A - Electrode forming method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To narrow the clearance between electrodes even if a vapor-deposition mask is used without the mask being affected by an aspect ratio. SOLUTION: A metallic strip electrode is formed on an org. light emitting layer formed on a transparent substrate via a transparent electrode by the use of a vapor-deposition mask 11. In this case, many small circular holes 13 are formed in the mask 11 at a specified space S1 , the mask 11 is moved in the direction orthogonal to the line of the small holes 13, and deposition is carried out. Accordingly, only the formation of the small holes 13 in the mask 11 at a specified space S1 is necessary, a slender slit need not be formed unlike the conventional vapor-deposition mask, the workability of the mask 11 is improved, the mask is not affected by the aspect ratio so much as compared with the conventional one having a slit, the mechanical strength is ensured, the mask 11 can be thinned, hence the space S1 between the small holes 13 is made narrower than that of conventional way, and the clearance between the electrodes is also narrowed.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] The present invention relates to a method for forming an electrode.

[0002]

2. Description of the Related Art Conventionally, display devices include a liquid crystal display device which displays information without emitting light by itself, an electroluminescent display device which emits light to display information, and a plasma display. A light emitting display device will be described as an example. In this electroluminescent display device, an electric field is applied to a light-emitting layer made of a light-emitting substance, and the light-emitting layer is excited by the movement or combination of electrons and holes in the light-emitting layer, thereby causing the light-emitting layer to emit light and emit dots. The structure is such that information is displayed on the display.

FIG. 10 and FIG. 11 are diagrams showing one example. In this electroluminescent display device, strip-shaped transparent electrodes 2 made of a transparent conductive material such as ITO are arranged and formed on an upper surface of a glass substrate 1, and an organic light emitting layer 3 is formed to cover these transparent electrodes 2. A band-shaped metal electrode 4 made of MgIn, AlLi, or the like is formed on the upper surface of the organic light emitting layer 3.
Are formed orthogonal to the transparent electrode 2. In this electroluminescent display device, a region where the transparent electrode 2 and the metal electrode 4 oppose each other with the organic light emitting layer 3 interposed therebetween forms pixels, and the pixels are arranged in a dot matrix.
By selectively applying a DC voltage to the transparent electrode 2 and the metal electrode 4 corresponding to each pixel, the organic light emitting layer 3 is formed by the combination of electrons and holes in the applied organic light emitting layer 3.
Is excited to emit light, and the light is emitted through the transparent electrode 2 and the glass substrate 1.

[0004] The organic light emitting layer 3 is an electroluminescent layer (EL layer), and has a single-layer structure composed of an organic layer having, for example, a hole transporting property, a light emitting property and an electron transporting property. Or a two-layer structure in which a first organic layer having only a hole-transport property or a hole-transport property and a light-emitting property and a second organic layer having only an electron-transport property or a light-emitting property and an electron-transport property are laminated. And a three-layer structure in which a first organic layer having a hole transporting property, a second organic layer having a light emitting property, and a third organic layer having an electron transporting function are sequentially laminated.

In such an electroluminescent display device, the organic light emitting layer 3 is susceptible to moisture and oxygen, and when moisture and oxygen enter the organic light emitting layer 3, the light emitting characteristics are deteriorated.
When the strip-shaped metal electrode 4 is formed on the upper surface of the substrate, it is necessary to form the metal electrode 4 by vacuum evaporation using an evaporation mask 5 as shown in FIG. As shown in FIG. 13, a vapor deposition mask 5 used for this vacuum vapor deposition usually has a strip-shaped metal electrode 4 on a metal plate 6 such as stainless steel or brass in order to vapor-deposit a metal at a predetermined location on the organic light emitting layer 3. Same width L as
Thus, a large number of elongated slit holes 7 having the same length are arranged at predetermined intervals S.

When vacuum evaporation is performed using the evaporation mask 5, as shown in FIG.
Is turned upside down so that the organic light emitting layer 3 faces downward, a vapor deposition mask 5 is fixed below the organic light emitting layer 3, and a metal is vapor deposited in this state. At this time, the metal molecules 8 pass through the slit holes 7 of the evaporation mask 5 and are evaporated on the surface of the organic light emitting layer 3. For this reason, as shown in FIG. 10, the strip-shaped metal electrodes 4 are formed in an array with the same width as the width L of the slit hole 7 of the vapor deposition mask 5, and a portion blocked by the vapor deposition mask 5 is formed in a gap between the metal electrodes 4. This gap has the same width as the interval S between the slit holes 7 of the evaporation mask 5.

[0007]

By the way, in such an electroluminescent display device, in order to increase the area of each pixel and improve display visibility without reducing the number of pixels, the distance between the metal electrodes 4 is increased. There is a demand for narrowing the gap to increase the width of the metal electrode 4, and in order to meet this demand, it is necessary to narrow the interval S between the slit holes 7 of the vapor deposition mask 5. However, in such a conventional vapor deposition mask 5, since the elongated slit holes 7 are sequentially formed at predetermined intervals S in the metal plate 6 such as stainless steel or brass, the processing of the metal plate 6 is limited, and the slit hole is limited. The ratio (aspect ratio) of the thickness L of the metal plate 6 to the width L of the slits 7 or the spacing S between the slit holes 7 (aspect ratio) is limited to 1: 1. It is considered that sufficient processing accuracy cannot be obtained, and it is conceivable to make the metal plate 6 thin in order to keep the aspect ratio low.
If the thickness is less than this, a problem arises that the deposition mask 5 cannot withstand the deposition. Therefore, in such an electrode forming method using the vapor deposition mask 5, since the vapor deposition mask 5 is affected by the aspect ratio, not only the thickness of the vapor deposition mask 5 cannot be reduced, but also the gap between the metal electrodes 4 is reduced. There is a limit to making the pixel narrower, and there is a problem that the visibility of display cannot be sufficiently improved by enlarging each pixel.

An object of the present invention is to make it possible to form a narrow gap between metal electrodes even when an evaporation mask is used, regardless of the aspect ratio of the evaporation mask.

[0009]

According to the first aspect of the present invention,
In an electrode forming method of forming band-shaped electrodes by vapor deposition using a vapor deposition mask, a plurality of small holes are arranged and formed at predetermined intervals in a vapor deposition mask, and the vapor deposition mask is moved in a direction intersecting the arrangement direction of the small holes. It is characterized in that the vapor deposition is performed while being performed. According to the first aspect of the present invention, it is only necessary to form a plurality of small holes at predetermined intervals in a vapor deposition mask, and to form a slit hole having the same shape as a band-shaped electrode finally formed like a conventional vapor deposition mask. Since there is no need to perform this process, the processability of the deposition mask is improved, and the thickness of the deposition mask is not affected by the aspect ratio and less anxious about the mechanical strength compared to the conventional case where slit holes are formed. Can be made thinner, so that the interval between the small holes can be narrower than the conventional one,
As a result, a large number of the arranged small holes move, and the gap between the electrodes finally formed can be narrowed.

In this case, the plurality of small holes may be arranged in a line in a direction intersecting with the moving direction of the evaporation mask, as described in claim 2, but as described in claim 3, a plurality of small holes are arranged. By arranging the small holes in multiple rows in the direction crossing the direction of movement of the evaporation mask and without overlapping each other in the direction of movement of the evaporation mask, a large number of small holes are formed without being affected by the aspect ratio at all. Since the plurality of rows of small holes move without overlapping each other to form an electrode, the gap between the finally formed electrodes can be further reduced.

According to a fourth aspect of the present invention, there is provided an electrode forming method for arranging strip electrodes by vapor deposition using a vapor deposition mask, wherein the elongated slit holes are finally formed in the vapor deposition mask with respect to the strip electrodes. It is characterized in that the deposition is performed by alternately or alternately depositing a plurality of the deposition masks, and the deposition using the deposition mask is divided into a plurality of times, and the position of the deposition mask is shifted each time and the deposition is repeated. Claim 4
In the described invention, the interval between the slit holes can be made sufficiently wider than the width of the slit holes, so that the slit holes can be formed with high accuracy without being affected by the aspect ratio. Can be narrowed to a width which is a multiple of the number of times the position of the deposition mask is shifted with respect to the width of the slit hole.

Further, according to a fifth aspect of the present invention, there is provided an electrode forming method for arranging strip electrodes by vapor deposition using a vapor deposition mask, wherein the width of the strip electrodes in which narrow slit holes are finally formed in the vapor deposition mask. It is characterized by forming an array with a narrower width, and performing evaporation while moving the evaporation mask in the width direction of the slit hole. According to the fifth aspect of the present invention, even if the same number of slit holes as in the related art is formed in the vapor deposition mask, the width of the slit holes can be made smaller than the interval between the slit holes, so that it is not affected by the aspect ratio. Even if the gap between the slit holes is wide, by adjusting the amount of movement of the slit hole in the width direction of the vapor deposition mask, the gap between the electrodes finally formed can be reduced. Can be narrow.

[0013]

BEST MODE FOR CARRYING OUT THE INVENTION

[First Embodiment] A first embodiment in which the present invention is applied to a light emitting display device will be described below with reference to FIGS. The same parts as those in the conventional example shown in FIGS. 10 to 13 are denoted by the same reference numerals, and description thereof will be omitted. When the metal electrode 10 is formed on the lower surface of the organic light emitting layer 3 formed on the lower surface of the glass substrate 1 so as to cover the transparent electrode 2, FIG.
As shown in (1), a vapor deposition mask 11 is arranged below the organic light emitting layer 3 to perform vacuum vapor deposition. In this case, the deposition mask 11
As shown in FIG. 2, it has a large number of small holes 13 of the metal plate 12 circularly shaped such as stainless steel or brass is formed and arranged in a row at predetermined intervals S ₁ structure. Therefore, when vacuum deposition is performed using this vapor deposition mask 11, the vapor deposition mask 11 is placed under the organic light emitting layer 3 and the vapor deposition mask 11 is arranged in the direction in which the small holes 13 are arranged as shown in FIG. Is deposited while being moved in a direction orthogonal to. Then, the metal molecules 8 passing through the small holes 13 are sequentially deposited on the lower surface of the organic light emitting layer 3 with the movement of the vapor deposition mask 11, so that the inner diameter L ₁ of the small holes 13 of the vapor deposition mask 11 is formed on the lower surface of the organic light emitting layer 3. And the gap between the metal electrodes 10 is formed with the same width as the interval S ₁ between the small holes 13 of the vapor deposition mask 11.

In such a method of forming the metal electrode 10,
All that is required is to form a circular small hole 13 in the metal plate 12.
Since it is not necessary to form the elongated slit holes 7 unlike the conventional vapor deposition mask 5, the processability of the vapor deposition mask 11 is improved, and the aspect ratio is more affected than the case where the conventional slit holes 7 are formed. And the thickness t of the vapor deposition mask 11
₁ can be made thinner than the thickness t of the conventional evaporation mask 5, the spacing S ₁ between Thus small holes 13 can be narrower than the interval S between the conventional slit 7, thereby sequences A large number of the small holes 13 are moved and the gap between the finally formed metal electrodes 10 can be made narrower than the conventional one. In this case, the inner diameter L ₁ of the small hole 13 is
If the distance between the metal electrodes 10 is formed larger than the distance S ₁ (L ₁ <S ₁ ), the gap between the metal electrodes 10 can be narrower than the conventional one, and the width of the metal electrodes 10 can be increased. The area of each pixel of the light-emitting display device can be increased, and display visibility can be improved. In addition, small hole 13
If the inner diameter L ₁ in the same (L ₁ = S ₁₎ and the spacing S ₁ between the small hole 13, it is possible to increase the number of the metal electrode 10 as compared with the conventional, thereby light-emitting display device And the number of pixels increases, and high-resolution display becomes possible.

[Second Embodiment] Next, referring to FIGS. 4 and 5, a second embodiment in which the present invention is applied to an electroluminescent display device will be described.
An embodiment will be described. In this case, FIGS.
The same reference numerals are given to the same parts as in the first embodiment shown in FIG.
The description is omitted. As shown in FIG. 5, a vapor deposition mask 21 used for forming a metal electrode 20 of this electroluminescent display device has a large number of circular small holes 13 formed in a metal plate 12 at right angles to the moving direction of the vapor deposition mask 21. The structure is arranged in a staggered fashion along the direction, that is, arranged in two rows so as not to overlap each other in the moving direction of the vapor deposition mask 21. That is, the first row of small holes 13, the spacing S ₂ between these small holes 13 are arranged in width than the inner diameter L ₁ of the small holes 13, the second row of small holes 13, first column corresponding, and are arranged apart from the adjacent first row of small holes 13 by the distance S ₂ over the length of the inner diameter L ₁ without protrudes it into the gap S ₂ between the small holes 13 of the.

When the metal electrode 20 is formed by vacuum vapor deposition using the vapor deposition mask 21, the vapor deposition is performed with the vapor deposition mask 21 disposed below the organic light emitting layer 3 as in the first embodiment. Vapor deposition is performed while moving the mask 21 in a direction perpendicular to the arrangement direction of the small holes 13. Then, the metal molecules 8 passing through the small holes 13 are sequentially deposited on the lower surface of the organic light emitting layer 3 with the movement of the vapor deposition mask 21, so that the inner diameter L ₁ of the small holes 13 of the vapor deposition mask 21 is formed on the lower surface of the organic light emitting layer 3. And the gap between the metal electrodes 20 is the distance S ₂ between the small holes 13 in the first row of the vapor deposition mask 21 and the small holes 13 in the second row opposed thereto. It is formed by about half the distance of the difference between the inner diameter L ₁ of (= S ₂ -L _1).

In such a method of forming the metal electrode 20,
Spacing S ₂ between the first row of small holes 13 formed in the evaporation mask 21 is formed wider than the inner diameter L ₁ of the small holes 13, the second row of small holes 13 between the first row of small holes 13 response without protruding into the gap S _2, and so from the adjacent first row of small holes 13 are separated by an inner diameter L ₁ or more spacing S _2, irrespective all the aspect ratio, number of small The holes 13 can be formed, and the gaps between the metal electrodes 20 that are finally formed by the movement of the small holes 13 are equal to the spacing S between the small holes 13 in the first row.
Since approximately half of the interval of the difference between the inner diameter L ₁ of the second row of small holes 13 that faces ₂ and to (= S ₂ -L _1), those gaps between the metal electrodes 20 of the first embodiment Can be made even smaller than in

Although the small holes 13 are formed in the vapor deposition mask 21 in two rows in the second embodiment, the present invention is not limited to this, and the small holes 13 may be formed in three or more rows. In this case, the interval between the small holes 13 in each row may be set to such a size that the small holes 13 can be arranged by the number corresponding to the number of rows. In the first and second embodiments, the small holes 1 of the evaporation masks 11 and 21 are used.
Although 3 is formed in a circular shape, the present invention is not limited to this, and each side may be formed in a square shape such as a square parallel or orthogonal to the moving direction of the evaporation mask. With this configuration, the metal electrode can be formed with a uniform thickness.

[Third Embodiment] Next, referring to FIGS. 6 and 7, a third embodiment in which the present invention is applied to an electroluminescent display device will be described.
An embodiment will be described. In this case, the same parts as those of the conventional example shown in FIGS. 10 to 13 are denoted by the same reference numerals, and description thereof will be omitted. Metal electrode 2 of this electroluminescent display device
As shown in FIG. 7, the vapor deposition mask 26 used for forming the metal layer 5 has a structure in which a long and narrow slit hole 27 is formed in the metal plate 6 every other metal electrode 25 to be finally formed. In this case, the slit holes 27, a wide width L ₂ than the width L of the conventional slit 7 is formed in the same length as the metal electrode 25 to be finally formed. Further, the interval S ₃ between the slit holes 27 is shorter than three times the width L ₂ of the slit holes 27 (S ₃ <3 × L ₂ ) since every other slit hole 27 is formed, and The slit hole 27 is formed to have a width longer than the width L ₂ (S ₃ > L ₂ ).

When the metal electrode 25 is formed by vacuum evaporation using the evaporation mask 26, as shown in FIG. The second evaporation is performed. Then, on the lower surface of the organic light emitting layer 3, every other metal electrode 25 is provided with a slit hole 27.
Formed by the width L _2. Thereafter, the vapor deposition mask 26 is shifted so that the slit holes 27 correspond to the metal electrodes 25 formed alternately, and the second vapor deposition is performed in this state.
Then, every other metal electrode 25 formed by the second vapor deposition is formed with the same width as the width L ₂ of the slit hole 27 between the first formed metal electrodes 25. Thereby, the metal electrode 2
5 together are formed in a wide width L ₂ than the prior art, the spacing S ₃ between the slits 27 between the first metal electrode 25 formed on the metal electrode 25 formed on the second
A narrower gap is formed.

In such a method of forming the metal electrode 25,
Since forming the slits 27 are alternately in the deposition mask 26, even if the width L ₂ of the slit hole 27 in the wider width than that of the conventional, between slits 27 than the width L ₂ of the slit hole 27 the spacing S ₃ is have sufficiently wide, without being is dependent on the aspect ratio, the slits 27 can be formed accurately, yet spacing S ₃ between the slits 27
By setting so as to approach the width L ₂ of the slit hole 27,
Be wider width of the spacing S ₃ between the slits 27, the gap between the finally formed metal electrodes 25 can be very narrow as compared with the prior art.

In the third embodiment, the case where every other slit hole 27 is formed in the vapor deposition mask 26 has been described. However, the present invention is not limited to this, and a plurality of slit holes 27 may be formed. In this case, the interval S ₃ between the slit holes 27 is set to be equal to the width L ₂ of the
If the width is close to a width (S ₃ = L ₂ × n) which is a multiple of the number n of the position shifts of 6, the gap between the finally formed metal electrodes 25 can be narrowed as in the third embodiment. .

[Fourth Embodiment] Next, referring to FIGS. 8 and 9, a fourth embodiment in which the present invention is applied to an electroluminescent display device will be described.
An embodiment will be described. Also in this case, the same parts as those of the conventional example shown in FIGS. 10 to 13 are denoted by the same reference numerals, and description thereof will be omitted. Metal electrode 3 of this electroluminescent display device
As shown in FIG. 9, the vapor deposition mask 31 used to form 0 corresponds to the metal electrode 30 where the elongated slit hole 32 is finally formed in the metal plate 6, and is formed with a width L ₃ smaller than the width thereof. It has a structure. That is, the slit hole 3
Reference numeral 2 denotes a width L ₃ (≦ L) which is equal to or smaller than the width L of the conventional slit hole 7, and is a metal electrode 30 to be finally formed.
It is formed to the same length as. The interval S ₄ between the slit holes 32 is equal to or larger than the gap S between the conventional slit holes 7 (S ₄ ≧ S).

When the metal electrode 30 is formed by vacuum vapor deposition using the vapor deposition mask 31, the vapor deposition is performed with the vapor deposition mask 31 disposed below the organic light emitting layer 3 as shown in FIG. The vapor deposition is performed while moving the mask 31 along the arrangement direction of the slit holes 32. At this time, the movement amount P of the evaporation mask 31 is determined by the distance S ₄ between the slit holes 32.
It is within the range of a slightly shorter distance (P <S ₄ ). When the vapor deposition mask 31 moves in this manner, the metal molecules 8 that have passed through the slit holes 32 with the movement of the vapor deposition mask 31 are sequentially vapor-deposited on the lower surface of the organic light emitting layer 3 and vapor-deposited in the width direction of the slit holes 32. A metal electrode 30 is formed. The width of the metal electrode 30 is the sum (= P + L ₃ ) of the movement amount P of the evaporation mask 31 and the width L ₃ of the slit hole 32, and the gap between the metal electrodes 30 is the distance S ₄ between the slit holes 32. and the difference between the amount of movement P of the slits 32 (= S ₄ -P), is narrower than the spacing S ₄ between the slit 32.

In such a method of forming the metal electrode 30,
The slit hole 32 of the evaporation mask 31 is replaced with the conventional slit hole 7.
The same or narrower width L ₃ than the width L of (≦ L) by forming the spacing S ₄ between the slit 32 of the conventional slit 7
Since the gap L is equal to or larger than the gap S between them (S ₄ ≧ S), the width L ₃ of the slit hole 32 is reduced even if the same number of slit holes 32 are formed in the evaporation mask 31 as in the prior art. It can be narrower than spacing S ₄ between the slit hole 32 without being affected by this order aspect ratio
Can form, yet even wider spacing S ₄ between the slit 32, by adjusting the movement amount P in the width direction of the slit 32 of the deposition mask 31, a metal electrode to be finally formed The gap between the 30 can be made narrower than the conventional one.

In the first to fourth embodiments, the case where the present invention is applied to an electroluminescent display device has been described. However, the present invention is not necessarily limited to the electroluminescent display device, and other display devices such as a liquid crystal display device and a plasma display may be used. It can be widely applied to devices.

[0027]

As described above, according to the first aspect of the present invention, when band-shaped electrodes are formed by vapor deposition using a vapor deposition mask, a plurality of small holes are formed at predetermined intervals in the vapor deposition mask. Then, since the evaporation is performed while moving the evaporation mask in a direction intersecting with the arrangement direction of the small holes, it is only necessary to form small holes such as circular or square at predetermined intervals in the evaporation mask, and it is necessary to form the holes like a conventional evaporation mask. Since it is not necessary to form a slit hole having the same shape as the band-shaped electrode finally formed, the processability of the deposition mask is improved, and the aspect ratio is more affected than when a conventional slit hole is formed. However, since there is little concern about mechanical strength, the thickness of the vapor deposition mask can be reduced, so that the space between the small holes can be narrower than that of the conventional one,
As a result, a large number of the arranged small holes move, and the gap between the electrodes finally formed can be narrowed.

According to the fourth aspect of the present invention, when the strip-shaped electrodes are arrayed and formed by vapor deposition using a vapor deposition mask, a narrow slit hole is formed in the vapor deposition mask with respect to the band-shaped electrode finally formed. Every other or a plurality of them are arranged and formed.
Since the position of the evaporation mask is shifted every time and the evaporation is repeated, the interval between the slit holes can be made sufficiently large compared to the width of the slit holes, so that the slit holes can be precisely formed regardless of the aspect ratio. It is possible to make the gap between the electrodes finally formed extremely narrow by making the interval between the slit holes close to a multiple of the number of times the position of the deposition mask is shifted with respect to the width of the slit holes. it can.

Further, according to the fifth aspect of the present invention, when the strip-shaped electrodes are arrayed and formed by vapor deposition using a vapor deposition mask, a narrow slit hole is formed in the vapor deposition mask in accordance with the width of the band-shaped electrode finally formed. Since the vapor deposition mask is vapor-deposited while moving it in the width direction of the slit holes, even if the same number of slit holes are formed in the vapor deposition mask, the width of the slit holes is set between the slit holes. The gap can be narrower than the gap, so that the slit hole can be formed regardless of the aspect ratio, and even if the gap between the slit holes is wide, the amount of movement of the evaporation mask in the width direction of the slit hole can be increased. By adjusting the distance between the electrodes, the gap between the electrodes to be finally formed can be narrowed.

[Brief description of the drawings]

FIG. 1 is a sectional view at the time of vapor deposition in a first embodiment in which the present invention is applied to an electroluminescent display device.

FIG. 2 is a rear view of the vapor deposition mask of FIG.

FIG. 3 is a sectional view taken along line AA of FIG. 1;

FIG. 4 is a sectional view at the time of vapor deposition in a second embodiment in which the present invention is applied to a light emitting display device.

FIG. 5 is a rear view of the deposition mask of FIG. 4;

FIG. 6 is a cross-sectional view at the end of vapor deposition in a third embodiment in which the present invention is applied to an electroluminescent display device.

FIG. 7 is a rear view of the vapor deposition mask of FIG. 6;

FIG. 8 is a cross-sectional view at the end of vapor deposition in a fourth embodiment in which the present invention is applied to a light emitting display.

FIG. 9 is a rear view of the vapor deposition mask of FIG. 8;

FIG. 10 is a rear view of the electroluminescent display device.

11 is a side view of the light emitting display of FIG.

FIG. 12 is a cross-sectional view showing a process of forming a metal electrode by vacuum evaporation using a conventional evaporation mask.

FIG. 13 is a rear view of the vapor deposition mask of FIG.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Glass substrate 2 Transparent electrode 3 Organic light emitting layer 10, 20, 25, 30 Metal electrode 11, 21, 26, 31 Deposition mask 13 Small hole 27, 32 Slit hole

Claims (5)

[Claims] 1. An electrode forming method for arranging strip electrodes by vapor deposition using a vapor deposition mask, wherein a plurality of small holes are arrayed and formed at predetermined intervals in the vapor deposition mask,
An electrode forming method, wherein the evaporation is performed while moving the evaporation mask in a direction intersecting the arrangement direction of the small holes. 2. The method according to claim 1, wherein the plurality of small holes are arranged in a line in a direction intersecting a moving direction of the deposition mask. 3. The method according to claim 1, wherein the plurality of small holes are arranged in a plurality of rows in a direction intersecting with the moving direction of the vapor deposition mask and are not overlapped with each other in the moving direction of the vapor deposition mask. The method for forming an electrode according to claim 1. 4. An electrode forming method for arranging strip electrodes by vapor deposition using a vapor deposition mask, wherein one or a plurality of elongated slit holes are formed in the vapor deposition mask with respect to the finally formed band electrode. A method for forming an electrode, comprising: arranging a plurality of individual depositions; dividing the deposition by a plurality of deposition masks into a plurality of depositions; 5. An electrode forming method for arranging strip electrodes by vapor deposition using a vapor deposition mask, wherein narrow slit holes are arranged in the vapor deposition mask with a width smaller than the width of the strip electrodes to be finally formed. An electrode forming method comprising: forming a film; and performing vapor deposition while moving the vapor deposition mask in a width direction of the slit hole.