JPH0992617A - Method for integrating secondary thin film of nano scale microparticle - Google Patents
Method for integrating secondary thin film of nano scale microparticleInfo
- Publication number
- JPH0992617A JPH0992617A JP7242237A JP24223795A JPH0992617A JP H0992617 A JPH0992617 A JP H0992617A JP 7242237 A JP7242237 A JP 7242237A JP 24223795 A JP24223795 A JP 24223795A JP H0992617 A JPH0992617 A JP H0992617A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- film
- fine particles
- nanoscale
- particles
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 52
- 238000000034 method Methods 0.000 title claims description 37
- 239000011859 microparticle Substances 0.000 title abstract 5
- 239000010408 film Substances 0.000 claims abstract description 54
- 239000007788 liquid Substances 0.000 claims abstract description 36
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 239000007787 solid Substances 0.000 claims abstract description 19
- 239000003792 electrolyte Substances 0.000 claims abstract description 18
- 239000002245 particle Substances 0.000 claims abstract description 11
- 238000005381 potential energy Methods 0.000 claims abstract description 9
- 239000010419 fine particle Substances 0.000 claims description 48
- 239000002105 nanoparticle Substances 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 230000010354 integration Effects 0.000 claims description 5
- 239000000243 solution Substances 0.000 claims description 5
- 238000001035 drying Methods 0.000 claims description 4
- 239000008151 electrolyte solution Substances 0.000 claims description 3
- 238000002360 preparation method Methods 0.000 claims description 2
- 102000004169 proteins and genes Human genes 0.000 abstract description 6
- 108090000623 proteins and genes Proteins 0.000 abstract description 6
- 238000012546 transfer Methods 0.000 abstract description 6
- 230000006866 deterioration Effects 0.000 abstract description 5
- 241000219495 Betulaceae Species 0.000 abstract description 3
- 239000013078 crystal Substances 0.000 abstract description 3
- 239000011882 ultra-fine particle Substances 0.000 abstract description 3
- 230000007704 transition Effects 0.000 abstract description 2
- 102000008857 Ferritin Human genes 0.000 description 6
- 108050000784 Ferritin Proteins 0.000 description 6
- 238000008416 Ferritin Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- 238000005054 agglomeration Methods 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005076 Van der Waals potential Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000012620 biological material Substances 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005421 electrostatic potential Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000004816 latex Substances 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 239000005486 organic electrolyte Substances 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Recrystallisation Techniques (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】この発明は、固体基板上への
微粒子薄膜の直接作成方法に関するものである。さらに
詳しくは、液膜を利用して微粒子を固体基板上へ集積す
るナノスケール微粒子の２次薄膜集積法に関するもので
ある。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for directly producing a fine particle film on a solid substrate. More specifically, the present invention relates to a secondary thin film integration method for nanoscale particles in which fine particles are integrated on a solid substrate using a liquid film.
【０００２】[0002]
【従来の技術とその課題】従来より、エレクトロニク
ス、バイオマテリアル等の諸分野においては、新しい高
度機能を実現するための手段として微粒子や薄膜が注目
されており、微粒子そのものによって薄膜を形成するこ
とについても新しい機能性の発現の観点よりその技術的
発展が期待されている。2. Description of the Related Art Conventionally, in fields such as electronics and biomaterials, attention has been paid to fine particles and thin films as means for realizing new advanced functions. The technological development is also expected from the viewpoint of expressing new functionality.
【０００３】このような状況において、この発明の発明
者らによって、微粒子による薄膜形成、さらには、この
微粒子薄膜の三次元立体構造の形成方法が精力的に検討
されてきている。そして実際にも、すでにこれまでに微
粒子薄膜の形成方法についての様々な工夫が提案され、
微粒子を二次元的に凝集させることで個々の微粒子には
ない新しい物性機能を付与することのできる、単層また
は多層の微粒子の薄膜化技術等が確立されてきている。Under such circumstances, the inventors of the present invention have energetically investigated a method for forming a thin film of fine particles and a method for forming a three-dimensional three-dimensional structure of the fine particle thin film. And in fact, various ideas have already been proposed about the method of forming a fine particle thin film,
There has been established a technique for thinning single-layer or multi-layer fine particles, which can impart a new physical property function that individual fine particles do not have, by agglomerating the fine particles two-dimensionally.
【０００４】たとえば液体表面上での微粒子の凝集とそ
の転写法や、固体基板上への微粒子薄膜の直接作成法と
しての移流集積法等である。これらの方法は、新しい科
学的知見と考察が加えられることによって、微粒子薄膜
による二次元、そして三次元の新しい機能構造の形成を
可能とする革新的な技術手段として期待されるものであ
る。For example, a method of agglomeration of fine particles on the surface of a liquid and a transfer method thereof, and a method of advection integration as a method of directly producing a thin film of fine particles on a solid substrate. These methods are expected to be innovative technological means that enable the formation of two-dimensional and three-dimensional new functional structures by means of thin film of fine particles by adding new scientific knowledge and consideration.
【０００５】だが、一方で、これまでに確立してきた手
段のうちの、固体基板上への直接的な微粒子薄膜の形成
法については、比較的大きな微粒子（μｍスケール）に
関して適用できる技術であるという限界があった。なぜ
なら、これまでの方法では、集積したい微粒子の径と同
程度の膜厚の液膜を利用することが欠かせないが、この
液膜の膜厚は、その膜を作る固体基板の性質によって規
定されるため、一般には安定なナノメートルスケールの
膜を形成することができなかったからである。従って、
ナノスケールの微粒子（たとえばたんぱく質など）を固
体基板上に制御して集積することは不可能であった。On the other hand, among the means established so far, the method for directly forming a fine particle thin film on a solid substrate is a technique applicable to relatively large fine particles (μm scale). There was a limit. This is because it is essential to use a liquid film with a film thickness similar to the diameter of the particles to be accumulated in the conventional methods, but the film thickness of this liquid film is defined by the properties of the solid substrate on which the film is made. Therefore, in general, a stable nanometer-scale film could not be formed. Therefore,
It has been impossible to controllably integrate nanoscale particles (such as proteins) on a solid substrate.
【０００６】たとえば、電解質液膜の膜厚は静力学的な
釣り合い、すなわち、静電反発力とファンデルワールス
引力のバランスによりきまるが、実際は動力学的な釣り
合い条件、つまり、流体力学的な安定条件を満たさなけ
ればならない。一定面積の液膜の場合、膜厚が小さくな
ればなるほどこのことは難しくなる。また、毛管圧によ
り微粒子は固体基板上へ圧着されるから、ナノスケール
の微粒子の場合、横方向に動かなくなり大きな結晶化膜
をつくれなくなる。実際、実験的にも、固体基板上（ガ
ラス、シリコン基板、水銀など）では水の液膜の最小膜
厚は１００ｎｍ程度であり、これまでの移流集積法で
は、この大きさ以下の微粒子、たとえばたんぱく質程度
の大きさ（〜１０ｎｍ）の微粒子を集積できないことが
確認されている。For example, the film thickness of the electrolyte liquid film is determined by a static balance, that is, the balance between electrostatic repulsion force and van der Waals attractive force. The condition must be met. In the case of a liquid film having a constant area, the smaller the film thickness, the more difficult this becomes. Further, since the fine particles are pressed onto the solid substrate by the capillary pressure, in the case of nanoscale fine particles, they do not move laterally and a large crystallized film cannot be formed. Actually, experimentally, the minimum liquid film thickness of water on a solid substrate (glass, silicon substrate, mercury, etc.) is about 100 nm, and in the conventional advection integration method, fine particles of this size or smaller, for example, It has been confirmed that fine particles as small as proteins (~ 10 nm) cannot be accumulated.
【０００７】一方、ナノスケール微粒子を集積する方法
としては、ＬＢ法も知られている。この方法は、目的の
微粒子を吸着する分子を気液界面に展開し、この分子の
膜に微粒子を吸着させ、吸着された微粒子の集積体を固
体基板に転写することを特徴としている。しかし、この
ＬＢ法では、まず展開用の分子が必要であり、さらに、
固体基板上への転写というプロセスが必要となるため、
その操作は複雑で、しかもプロセス過程での集積体の劣
化が避けられないという欠点がある。On the other hand, the LB method is also known as a method for accumulating nanoscale fine particles. This method is characterized in that a molecule that adsorbs a target fine particle is developed at a gas-liquid interface, the fine particle is adsorbed on a film of this molecule, and an aggregate of the adsorbed fine particles is transferred to a solid substrate. However, this LB method first requires a molecule for expansion, and further,
Since a process of transfer onto a solid substrate is required,
Its operation is complicated and has a drawback that deterioration of the integrated body in the process is inevitable.
【０００８】そこで、この発明は、以上の通りの事情に
鑑みてなされたものであり、たんぱく質などのナノスケ
ールの超微粒子の２次元結晶が作成可能で、転写等によ
る劣化も起こらない、新しい薄膜集積法を提供すること
を目的としている。Therefore, the present invention has been made in view of the above-mentioned circumstances, and a new thin film capable of producing a two-dimensional crystal of nanoscale ultrafine particles such as protein without causing deterioration due to transfer or the like. The purpose is to provide an agglomeration method.
【０００９】[0009]
【課題を解決するための手段】この発明は上記の課題を
解決するものとして、イオン強度の制御によって電解質
液膜中の荷電微粒子に対するポテンシャルエネルギーを
２次極小として微粒子のナノスケールの２次薄膜を形成
し、この２次薄膜中にナノスケール微粒子を閉じ込めて
集積することを特徴とする微粒子の２次薄膜集積法を提
供する。In order to solve the above problems, the present invention provides a nanoscale secondary thin film of fine particles by controlling the ionic strength so that the potential energy for the charged fine particles in the electrolyte liquid film is the secondary minimum. Provided is a method for integrating a secondary thin film of fine particles, which is characterized by forming and confining nanoscale fine particles in the secondary thin film.
【００１０】すなわち、この発明では、上記の通り、電
解質液膜中に２次薄膜を形成し、ナノスケール微粒子を
そのなかに閉じ込めて集積させる。このことを、原理的
に説明すると、まず、図１のような巨視的に安定な膜厚
ｈの電解質液膜を考える。その中に電荷ｑを持ち、半径
Ｒの荷電微粒子が存在するとき、この微粒子に対するポ
テンシャルエネルギーは、次式That is, according to the present invention, as described above, the secondary thin film is formed in the electrolyte liquid film, and the nanoscale fine particles are confined and accumulated therein. This will be explained in principle. First, consider an electrolyte liquid film having a macroscopically stable film thickness h as shown in FIG. When a charged fine particle having a charge q and a radius R is present therein, the potential energy for this fine particle is
【００１１】[0011]
【数１】 [Equation 1]
【００１２】で表わすことができる。この式において、
右辺第１、２項は静電ポテンシャルを、第３項はファン
デルワールス・ポテンシャルを示し、式中のｑ，κ，
Ｒ，Ａ，ｈはそれぞれ、微粒子の電荷、デバイパラメー
タ、微粒子半径、Ｈａｍａｋｅｒ定数、電解質液膜の膜
厚である（１，２は２つの界面を表わしている）。そし
て、適当なイオン強度を選ぶことにより、このポテンシ
ャルエネルギーは２次極小を持つ。液膜中でこの極小は
一様に面方向にできるから、これはすなわち、液膜中に
できた薄膜としての２次薄膜とみなすことができる。微
粒子はこの入れ子薄膜に閉じ込められ、２次元系を構成
することになる。たとえば、荷電微粒子が一種類である
とすると、その２次薄膜の中ではアルダー転位が起こ
り、六方細密充填する。Can be expressed as In this formula,
The first and second terms on the right side show the electrostatic potential, and the third term shows the van der Waals potential, where q, κ,
R, A, and h are the charge of the fine particles, the Debye parameter, the radius of the fine particles, the Hamaker constant, and the film thickness of the electrolyte liquid film (1 and 2 represent two interfaces). Then, by selecting an appropriate ionic strength, this potential energy has a secondary minimum. In the liquid film, this local minimum can be uniformly oriented in the surface direction, and thus it can be regarded as a secondary thin film as a thin film formed in the liquid film. The fine particles are confined in this nested thin film to form a two-dimensional system. For example, if there is only one type of charged fine particles, Alder dislocations occur in the secondary thin film, resulting in hexagonal close packing.
【００１３】このように、２次薄膜中での微粒子の集積
には、ＬＢ法の場合のように余分な分子も必要とせず、
液膜を固体基板上へ直接作成することができ、２次薄膜
中で集積した微粒子集積体は転写等による劣化を伴うこ
ともなく、直接固体基板上に形成することができる。そ
して、電解質液膜の中に２次薄膜をつることで、実際に
ナノスケール薄膜を作成しなくともよい。２次薄膜は電
解質膜中に保持されるので、毛管圧による基板への圧着
もなく横方向に可動なので大きなドメインができる。As described above, the accumulation of fine particles in the secondary thin film does not require extra molecules as in the case of the LB method,
The liquid film can be directly formed on the solid substrate, and the fine particle aggregate integrated in the secondary thin film can be directly formed on the solid substrate without deterioration due to transfer or the like. Then, it is not necessary to actually form the nanoscale thin film by suspending the secondary thin film in the electrolyte liquid film. Since the secondary thin film is held in the electrolyte membrane, it can be moved in the lateral direction without pressure bonding to the substrate due to capillary pressure, so that a large domain can be formed.
【００１４】[0014]
【発明の実施の形態】さらに詳しく説明すると、この発
明の方法では、電解質液膜中の荷電粒子に対するポテン
シャルエネルギーを２次極小としてナノスケールの２次
薄膜を形成するが、このことは、イオン強度、すなわち
電解質濃度の選択によって規定される。BEST MODE FOR CARRYING OUT THE INVENTION In more detail, according to the method of the present invention, a nanoscale secondary thin film is formed by setting the potential energy for charged particles in an electrolyte liquid film to a secondary minimum. , I.e., defined by the choice of electrolyte concentration.
【００１５】たとえばイオン強度が０．０１程度の時、
上記の２次極小の大きさは大体１０ｎｍから３０ｎｍで
あり、この時の２次薄膜の膜厚は１０ｎｍ〜３０ｎｍと
なる。従って、この２次薄膜に閉じ込めることができる
微粒子のサイズはその程度の大きさに制限される。イオ
ン強度を高くすることで、微粒子の電荷が大きいときは
数ｎｍ程度の小さな粒子まで入れることができる。一
方、大きな粒子の場合（μｍスケールのＬＡＴＥＸ粒子
など）には２次極小自体が意味を失う。従って、この方
法はナノスケール微粒子の集積にのみ適用できる。さら
に、イオン強度に粒子の電荷が依存してしまう時は、Ｈ
ａｍａｋｅｒ定数などを調整し２次薄膜の膜厚を小さく
すればよい。ただし、この時電解質液膜の巨視的安定性
を同時に満たすようにしなければならない。For example, when the ionic strength is about 0.01,
The size of the secondary minimum is approximately 10 nm to 30 nm, and the thickness of the secondary thin film at this time is 10 nm to 30 nm. Therefore, the size of the fine particles that can be confined in this secondary thin film is limited to that size. By increasing the ionic strength, small particles of about several nm can be included when the electric charge of the particles is large. On the other hand, in the case of large particles (such as LATEX particles on the μm scale), the secondary minimum itself loses its meaning. Therefore, this method can be applied only to the accumulation of nanoscale particles. Furthermore, when the charge of the particles depends on the ionic strength, H
The film thickness of the secondary thin film may be reduced by adjusting the maker constant or the like. However, at this time, it is necessary to simultaneously satisfy the macroscopic stability of the electrolyte liquid membrane.
【００１６】また、２次薄膜の膜厚調整のパラメーター
としては次のものを考慮することができる。 電解質液膜の膜厚・・・電解質濃度、Ｈａｍａｋｅ
ｒ定数、毛管圧の制御 イオン強度・・・電解質濃度の制御 Ｈａｍａｋｅｒ定数・・・液膜が接している界面の
物質を変える 実際の微粒子の集積による薄膜形成について説明する
と、この発明の方法では、次の手順、操作に従うことが
できる。The following can be considered as parameters for adjusting the thickness of the secondary thin film. Thickness of electrolyte liquid film: Electrolyte concentration, Hamake
Control of r constant and capillary pressure Ionic strength ... Control of electrolyte concentration Hamaker constant ... Changing the substance at the interface with which the liquid film is in contact The thin film formation by the actual accumulation of fine particles will be explained. The following procedures and operations can be followed.
【００１７】１）荷電性ナノスケール微粒子を分散させ
た電解質溶液の調製 ２）この微粒子分散電解質溶液の液膜の掃引法等による
固体基板上への形成（ナノメートルサイズの膜厚の液膜
とする必要はない） ３）固体基板上の液膜の乾燥によるナノスケール微粒子
の集積薄膜の形成 以上の操作において、通常では形成困難なナノスケール
微粒子の集積薄膜が形成されることになる。このこと
は、この発明の微粒子の２次薄膜集積法によって可能と
されたことを意味している。1) Preparation of an electrolyte solution in which charged nanoscale fine particles are dispersed 2) Formation of a liquid film of this fine particle-dispersed electrolyte solution on a solid substrate by means of a sweep method or the like (with a liquid film having a nanometer-sized film thickness) 3) Formation of an integrated thin film of nanoscale particles by drying a liquid film on a solid substrate In the above operation, an integrated thin film of nanoscale particles, which is usually difficult to form, is formed. This means that it is possible by the secondary thin film integration method of fine particles of the present invention.
【００１８】従って、より実際的表現としては、この発
明は、上記の１）２）３）のプロセスからなるナノスケ
ール微粒子の集積薄膜の形成方法を提供するものでもあ
る。もちろん、この場合、イオン強度の制御による前記
のポテンシャルエネルギーの２次極小化による２次薄膜
の形成と、この２次薄膜中への微粒子の閉じ込め集積が
必須となることは言うまでもない。Therefore, as a more practical expression, the present invention also provides a method for forming an integrated thin film of nanoscale fine particles, which comprises the above processes 1), 2) and 3). Needless to say, in this case, it is indispensable to form the secondary thin film by the secondary minimization of the potential energy by controlling the ion intensity and confine and accumulate the fine particles in the secondary thin film.
【００１９】また、この発明では、電解質や、荷電性微
粒子の種類に特に制限はない。無機質または有機電解
質、そしてたんぱく質等の荷電性微粒子の任意のものが
対象となる。以下実施例を示し、さらに詳しくこの発明
の実施の形態について説明する。Further, in the present invention, there are no particular restrictions on the type of the electrolyte and the charged fine particles. Inorganic or organic electrolytes and any of the charged fine particles such as proteins are of interest. Hereinafter, examples will be shown, and embodiments of the present invention will be described in more detail.
【００２０】[0020]
【実施例】フェリチン分子（直径１３ｎｍ）を１０ｍＭ
ＮａＣｌ（イオン強度０．０１）水溶液に分散させ、
その溶液の液膜を図２に示した通りの掃引法によりシリ
コン基板上へ作った。そして、フェリチン集積膜を乾燥
によって基板上に形成した。この時のフェリチン集積膜
は、溶液のｐＨが５から９へと高くなるほど良質なもの
となることが確認された（図３）。このことは、計算に
よっても、図４に示したように、フェリチン分子の電荷
（ｑ）が大きいほど（溶液のｐＨが高いほど）入れ子膜
の寿命が長いことからもわかる。これは、アルダー転位
的な相転移において相関距離が長くなり質が向上したか
らと考えられる。また、図４からは、液膜の膜厚（ｈ）
が厚いほど２次薄膜の寿命が短いので、乾燥によりアレ
イ（集積薄膜）を基板上へ作る場合、より薄い液膜が望
ましい。[Example] Ferritin molecule (diameter 13 nm) 10 mM
Disperse in NaCl (ionic strength 0.01) aqueous solution,
A liquid film of the solution was formed on the silicon substrate by the sweep method as shown in FIG. Then, the ferritin integrated film was formed on the substrate by drying. It was confirmed that the ferritin integrated film at this time had higher quality as the pH of the solution increased from 5 to 9 (FIG. 3). This can be seen from the calculation as well, as shown in FIG. 4, because the life of the nesting membrane is longer as the charge (q) of the ferritin molecule is larger (the pH of the solution is higher). It is considered that this is because the correlation distance becomes longer and the quality is improved in the Alder dislocation-like phase transition. Further, from FIG. 4, the film thickness (h) of the liquid film
Since the thicker the film, the shorter the life of the secondary thin film, a thinner liquid film is desirable when the array (integrated thin film) is formed on the substrate by drying.
【００２１】[0021]
【発明の効果】以上詳しく説明した通り、この発明によ
り、実ナノスケール液膜を作らずに、２次薄膜を電解質
液膜中に保持することができ、毛管圧による基板への圧
着もなく横方向に可動な大きなドメインを形成して良質
な微粒子集積薄膜を作ることができる。これにより、固
体基板上に直接にたんぱく質などのナノスケールの超微
粒子の２次元結晶が作成可能となる。この方法ではＬＢ
法のように展開用の分子の必要もなく、集積体が直接固
体基板上へ作成されるので、転写の必要がなく劣化もし
ない。As described in detail above, according to the present invention, the secondary thin film can be held in the electrolyte liquid film without forming a real nanoscale liquid film, and the lateral pressure is not applied to the substrate by capillary pressure. A fine particle-integrated thin film can be formed by forming a large domain that is movable in the direction. As a result, it becomes possible to directly form a two-dimensional crystal of nanoscale ultrafine particles such as protein directly on the solid substrate. This way LB
Unlike the method, there is no need for developing molecules, and since the aggregate is directly formed on the solid substrate, there is no need for transfer and no deterioration.
【図１】この発明の原理を説明するための液膜と微粒子
との関係図である。FIG. 1 is a relationship diagram between a liquid film and fine particles for explaining the principle of the present invention.
【図２】実施例として、フェリチン分子を含む液膜をシ
リコン基板上で掃引法により作成する場合の概略図であ
る。FIG. 2 is a schematic view of a case where a liquid film containing a ferritin molecule is formed on a silicon substrate by a sweep method as an example.
【図３】実施例としてのフェリチン集積膜の溶液ｐＨに
よる状態を示した図面に代わる写真である。FIG. 3 is a photograph replacing a drawing showing a state of a ferritin integrated film as an example according to a solution pH.
【図４】２し薄膜の寿命と、液膜の膜厚および分子の電
荷量の関係を示した相関図である。FIG. 4 is a correlation diagram showing the relationship between the life of a thin film and the thickness of a liquid film and the amount of charges of molecules.
Claims (2)
の荷電微粒子に対するポテンシャルエネルギーを２次極
小としてナノスケールの２次薄膜を形成し、この２次薄
膜中にナノスケール微粒子を閉じ込めて集積することを
特徴とするナノスケール微粒子の２次薄膜集積法。1. A nanoscale secondary thin film is formed by controlling the ionic strength so that the potential energy for charged fine particles in an electrolyte liquid film is a secondary minimum, and the nanoscale fine particles are confined and integrated in the secondary thin film. A secondary thin film integration method of nanoscale fine particles characterized by:
ナノスケール微粒子の集積薄膜の形成法。 １）荷電性ナノスケール微粒子を分散させた電解質溶液
の調製 ２）前記溶液の液膜中の荷電粒子に対するポテンシャル
エネルギーの２次極小化による液膜の固体基板上への直
接的形成 ３）前記液膜の乾燥によるナノスケール微粒子の集積薄
膜の固体基板上への形成2. A method for forming an integrated thin film of nanoscale particles, which comprises the following process. 1) Preparation of an electrolyte solution in which charged nanoscale fine particles are dispersed 2) Direct formation of a liquid film on a solid substrate by secondary minimization of the potential energy of the solution for the charged particles in the liquid film 3) The liquid Formation of integrated thin film of nanoscale particles on solid substrate by drying film
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| JP24223795A JP3768568B2 (en) | 1995-09-20 | 1995-09-20 | Secondary thin film integration method of nanoscale fine particles |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24223795A JP3768568B2 (en) | 1995-09-20 | 1995-09-20 | Secondary thin film integration method of nanoscale fine particles |
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| Publication Number | Publication Date |
|---|---|
| JPH0992617A true JPH0992617A (en) | 1997-04-04 |
| JP3768568B2 JP3768568B2 (en) | 2006-04-19 |
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ID=17086284
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| JP24223795A Expired - Fee Related JP3768568B2 (en) | 1995-09-20 | 1995-09-20 | Secondary thin film integration method of nanoscale fine particles |
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Cited By (5)
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|---|---|---|---|---|
| EP1431244A1 (en) * | 2001-11-08 | 2004-06-23 | Matsushita Electric Industrial Co., Ltd. | Micrograin film and process for producing the same |
| JP2005288325A (en) * | 2004-03-31 | 2005-10-20 | Gunma Univ | Manufacturing method of particulate accumulated structure |
| JP2012020389A (en) * | 2010-07-16 | 2012-02-02 | Oji Paper Co Ltd | Method for manufacturing single-particle film-coated roller, method for manufacturing irregularity-forming roller, method for manufacturing irregularity-forming film, and single-particle film-coating device |
| WO2014175351A1 (en) * | 2013-04-25 | 2014-10-30 | 国立大学法人大阪大学 | Organic semiconductor thin film production method |
| WO2017134990A1 (en) * | 2016-02-03 | 2017-08-10 | 富士フイルム株式会社 | Method for producing organic semiconductor film |
-
1995
- 1995-09-20 JP JP24223795A patent/JP3768568B2/en not_active Expired - Fee Related
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1431244A1 (en) * | 2001-11-08 | 2004-06-23 | Matsushita Electric Industrial Co., Ltd. | Micrograin film and process for producing the same |
| US7037728B2 (en) | 2001-11-08 | 2006-05-02 | Matsushita Electric Industrial Co., Ltd. | Fine particle film and producing method of the same |
| US7399642B2 (en) | 2001-11-08 | 2008-07-15 | Matsushita Electric Industrial Co., Ltd. | Fine particle film and producing method of the same |
| JP2005288325A (en) * | 2004-03-31 | 2005-10-20 | Gunma Univ | Manufacturing method of particulate accumulated structure |
| JP2012020389A (en) * | 2010-07-16 | 2012-02-02 | Oji Paper Co Ltd | Method for manufacturing single-particle film-coated roller, method for manufacturing irregularity-forming roller, method for manufacturing irregularity-forming film, and single-particle film-coating device |
| WO2014175351A1 (en) * | 2013-04-25 | 2014-10-30 | 国立大学法人大阪大学 | Organic semiconductor thin film production method |
| US10205094B2 (en) | 2013-04-25 | 2019-02-12 | Pi-Crystal Inc. | Organic semiconductor thin film production method |
| WO2017134990A1 (en) * | 2016-02-03 | 2017-08-10 | 富士フイルム株式会社 | Method for producing organic semiconductor film |
| CN108475644A (en) * | 2016-02-03 | 2018-08-31 | 富士胶片株式会社 | The manufacturing method of organic semiconductor film |
| JPWO2017134990A1 (en) * | 2016-02-03 | 2018-11-08 | 富士フイルム株式会社 | Method for producing organic semiconductor film |
| US10468597B2 (en) | 2016-02-03 | 2019-11-05 | Fujifilm Corporation | Method of manufacturing organic semiconductor film |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3768568B2 (en) | 2006-04-19 |
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