JPH098076A - Bonding wire - Google Patents
Bonding wireInfo
- Publication number
- JPH098076A JPH098076A JP7180703A JP18070395A JPH098076A JP H098076 A JPH098076 A JP H098076A JP 7180703 A JP7180703 A JP 7180703A JP 18070395 A JP18070395 A JP 18070395A JP H098076 A JPH098076 A JP H098076A
- Authority
- JP
- Japan
- Prior art keywords
- conductor
- bonding wire
- skin
- wire
- frequency current
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/43—Manufacturing methods
- H01L2224/432—Mechanical processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/45195—Material with a principal constituent of the material being a gas not provided for in groups H01L2224/451 - H01L2224/45191
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01074—Tungsten [W]
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
- Conductive Materials (AREA)
- Non-Insulated Conductors (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、例えば半導体装置にお
ける半導体チップと外部電極とを接続する場合などに用
いるボンディングワイヤ、特に高周波電流で駆動される
MPU(中央演算集積回路)やデジタルシグナルプロセ
ッサ等に用いるボンディングワイヤに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a bonding wire used for connecting a semiconductor chip and an external electrode in a semiconductor device, in particular, an MPU (central processing integrated circuit) or a digital signal processor driven by a high frequency current. Bonding wire used for.
【0002】[0002]
【従来の技術】上記のようなボンディングワイヤは、一
般に金、アルミニウム、銅等よりなる断面略円形の線状
の導体が用いられている。このようなボンディングワイ
ヤに高周波電流を流す場合、いわゆる表皮効果によって
電流が導体の表面に集中し、中心部には電流が殆ど、も
しくは全く流れなくなる現象が生じる。2. Description of the Related Art As the bonding wire as described above, a linear conductor made of gold, aluminum, copper or the like and having a substantially circular cross section is generally used. When a high-frequency current is passed through such a bonding wire, the current concentrates on the surface of the conductor due to the so-called skin effect, and a phenomenon occurs in which almost or no current flows in the central portion.
【0003】上記のように導体の中心部に電流が流れな
くなる電流の周波数fは、ボンディングワイヤの材質や
半径等によって異なるが、一般に、As described above, the frequency f of the current at which no current flows in the center of the conductor varies depending on the material and radius of the bonding wire, but in general,
【0004】[0004]
【数1】 [Equation 1]
【0005】と定義することができる。ただし、上記式
中のrはボンディングワイヤの半径、ρは比抵抗、μは
磁気透磁率である。Can be defined as However, in the above formula, r is the radius of the bonding wire, ρ is the specific resistance, and μ is the magnetic permeability.
【0006】例えばボンディングワイヤとして直径30
μmφの金線(ρ=2.35×10-8Ωm、μ≒μ0 =4π×
10-7H/m)を用いた場合には、For example, a bonding wire having a diameter of 30
μmφ gold wire (ρ = 2.35 × 10 −8 Ωm, μ≈μ 0 = 4π ×
10 -7 H / m),
【0007】[0007]
【数2】 [Equation 2]
【0008】となり、f>26.5MHzの周波数の電流を
流す場合には、ボンディングワイヤの周縁部にのみ電流
が流れ、中心部に電流が流れない、すなわち中心部は導
体として機能しないこととなる。When a current having a frequency of f> 26.5 MHz is passed, the current flows only in the peripheral portion of the bonding wire, and the current does not flow in the central portion, that is, the central portion does not function as a conductor.
【0009】また前記の表皮効果によって電流が流れる
導体表皮部分の厚さ(以下、表皮厚さという)δは、導
体の透磁率をμ、電気伝導度をσ、電流の角振動数をω
として、δ=(2/μσω)1/2 として算出することが
できる。また導体断面形状が半径rの円形であるときに
は、高周波電流の流れる導体表皮部分の断面積(以下、
有効面積という)Sは、導体外周面から半径方向内方に
厚さδのリング状となるから、 S=πr2 −π(r−δ)2 =2πrδ−πδ2 となる。The thickness (hereinafter referred to as the skin thickness) δ of the conductor skin portion through which the current flows due to the above-mentioned skin effect is μ of the permeability of the conductor, σ of the electrical conductivity, and ω of the angular frequency of the current.
Can be calculated as δ = (2 / μσω) 1/2 . When the conductor cross section is circular with a radius r, the cross sectional area of the conductor skin portion through which the high frequency current flows (hereinafter,
Since the effective area S has a ring shape with a thickness δ inward from the outer peripheral surface of the conductor, S = πr 2 −π (r−δ) 2 = 2πrδ−πδ 2 .
【0010】この場合、ボンディングワイヤに流れる電
流の周波数が高いほど、δはrに比べ小さくなるから、
上記式中のδ2 の項を無視して有効面積S1 =2πrδ
と近似することができる。一方、低周波直流電流の場合
にはボンディングワイヤの略断面全面に電流が流れ、そ
の有効面積S2 はS2 =πr2 であるから、高周波電流
に対してはS2 −S1 の差である(πr2 −2πrδ)
に相当する面積分が導体として機能していないこととな
る。In this case, δ is smaller than r as the frequency of the current flowing through the bonding wire is higher.
Ignoring the term δ 2 in the above equation, the effective area S 1 = 2πrδ
Can be approximated by On the other hand, in the case of a low frequency direct current, a current flows over the entire cross section of the bonding wire, and the effective area S 2 is S 2 = πr 2 , so there is a difference of S 2 −S 1 for the high frequency current. Yes (πr 2 -2πrδ)
That is, the area corresponding to does not function as a conductor.
【0011】以上のように高周波電流を流すボンディン
グワイヤにあっては、表皮効果によって電流の流れる有
効面積が減少し、それによって実効抵抗値が増大する等
の不具合がある。これを防ぐには高周波電流の流れる有
効面積を増大させればよく、そのためには例えば導体表
皮部分の面積が大きくなるようにすればよい。As described above, in the bonding wire through which the high frequency current is passed, there is a problem that the effective area through which the current flows is reduced due to the skin effect, which increases the effective resistance value. To prevent this, the effective area through which the high-frequency current flows may be increased. For that purpose, for example, the area of the conductor skin portion may be increased.
【0012】そこで、従来は高周波電流用のボンディン
グワイヤとして、リボン状の幅広の導線を用いたり、ボ
ンディング本数を増やす等の方法が採られている。しか
しながら、リボン状の幅広の導線を用いる方法は、最近
のように集積回路の高密度化に伴ってパッドピッチが狭
小化している半導体装置等に適用するには限界があり、
またボンディング本数を増やす方法は半導体チップ上の
パッド数を確保するのが難しく、しかも生産性が低下す
る等の問題がある。Therefore, conventionally, as a bonding wire for high-frequency current, a wide ribbon-shaped conductor wire is used, or the number of bonding wires is increased. However, the method using a ribbon-shaped wide conductive wire has a limit to be applied to a semiconductor device or the like in which the pad pitch is narrowed with the recent increase in density of integrated circuits,
In addition, the method of increasing the number of bonding has a problem that it is difficult to secure the number of pads on the semiconductor chip and the productivity is lowered.
【0013】さらに、例えば特開平6−302640号
公報のようにボンディングワイヤとしてリッツ線(より
線)を用いる方法や、特開平6−283565号公報の
ようにボンディングワイヤの表面断面形状を波形とする
方法等が提案されているが、前者のようにリッツ線を用
いるものは、例えば直径25μmのボンディング用リッ
ツ線を2本のより線で作製するとしても直径12.5μ
mという極細の単線を作らなければならず、製作が困難
であり、又たとえ極細の単線が製作できても、より線に
する際の操作や取扱いが非常に困難である等の不具合が
ある。また前記後者のように表面を波形に形成するもの
は、ボンディングを行う際にキャピラリー等によって波
の角が削られて表面が平坦になってしまい、表面積を増
加させる効果が低減もしくは喪失されてしまう等の問題
がある。Further, for example, a method of using a litz wire (stranded wire) as a bonding wire as in Japanese Patent Laid-Open No. 6-302640 or a corrugated surface cross-sectional shape of the bonding wire as in Japanese Patent Laid-Open No. 6-283565. Although a method and the like have been proposed, the former one using a litz wire has a diameter of 12.5 μm even if a bonding litz wire having a diameter of 25 μm is manufactured with two twisted wires.
Since an extremely thin single wire of m must be produced, it is difficult to manufacture, and even if an extremely thin single wire can be manufactured, there is a problem that it is very difficult to operate and handle the stranded wire. Further, in the case of forming a corrugated surface like the latter, the angle of the wave is scraped by a capillary or the like during bonding and the surface becomes flat, and the effect of increasing the surface area is reduced or lost. There is a problem such as.
【0014】[0014]
【発明が解決しようとする課題】以上のように上記従来
の方法は、いずれも表皮効果によって高周波電流が流れ
るワイヤ外周面の面積を増大させることを意図して提案
されたものであるが、必ずしも充分ではなかった。As described above, all of the above conventional methods have been proposed with the intention of increasing the area of the outer peripheral surface of the wire through which the high frequency current flows due to the skin effect. It wasn't enough.
【0015】本発明は上記従来の問題点に鑑みて提案さ
れたもので、ワイヤ外周面だけでなくワイヤ内部にも高
周波電流を良好に流すことのできるボンディングワイヤ
を提供することを目的とする。The present invention has been proposed in view of the above conventional problems, and an object of the present invention is to provide a bonding wire capable of favorably passing a high frequency current not only on the outer peripheral surface of the wire but also inside the wire.
【0016】[0016]
【課題を解決するための手段】上記の目的を達成するた
めに本発明によるボンディングワイヤは、以下の構成と
したものである。即ち、ボンディングワイヤを構成する
導体の内部にも、表皮効果により高周波電流を流すため
の表皮部を設けたことを特徴とする。In order to achieve the above object, the bonding wire according to the present invention has the following constitution. That is, it is characterized in that a skin portion for passing a high frequency current by the skin effect is also provided inside the conductor forming the bonding wire.
【0017】上記のようにワイヤを構成する導体内部に
表皮部を設ける最も典型的な構成例としては、例えば導
体を中空管状に形成する、あるいは導体内部に絶縁材を
介在させ、その中空管状導体の内周面もしくは絶縁材と
の境界面を前記表皮効果により高周波電流を流すための
表皮部とすればよい。As the most typical example of the structure in which the skin portion is provided inside the conductor forming the wire as described above, for example, the conductor is formed into a hollow tube, or an insulating material is interposed inside the conductor, and the hollow tubular conductor is formed. The inner peripheral surface or the boundary surface with the insulating material may be a skin portion for passing a high frequency current by the skin effect.
【0018】[0018]
【作用】上記のようにボンディングワイヤを構成する導
体の内部にも、表皮効果により高周波電流を流すための
表皮部を設けたことによって、従来導体として機能して
いなかったワイヤ内部にも電流を流すことができ、ワイ
ヤの外形寸法を増大させることなく、高周波電流が流れ
る有効面積を増加させることが可能となる。As described above, by providing a skin portion for passing a high frequency current due to the skin effect inside the conductor which constitutes the bonding wire as well, the electric current flows inside the wire which has not conventionally functioned as a conductor. Therefore, it is possible to increase the effective area through which the high-frequency current flows without increasing the outer dimension of the wire.
【0019】[0019]
【実施例】以下、図に示す実施例に基づいて本発明によ
るボンディングワイヤを具体的に説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The bonding wire according to the present invention will be specifically described below with reference to the embodiments shown in the drawings.
【0020】図1は本発明によるボンディングワイヤの
一実施例を示す横断面図である。本実施例のボンディン
グワイヤWは、金等よりなる導体1を中空管状に形成し
たもので、中央部には中空穴1aが形成されている。そ
の中空穴1aの内周面が、表皮効果によって高周波電流
を流すための表皮部として機能し、その中空穴1aの内
周面に高周波電流が流れる表皮厚さδは、導体1の外周
面に流れる表皮厚さδと等しい。FIG. 1 is a cross sectional view showing an embodiment of a bonding wire according to the present invention. The bonding wire W of the present embodiment is formed by forming the conductor 1 made of gold or the like into a hollow tubular shape, and has a hollow hole 1a formed in the central portion. The inner peripheral surface of the hollow hole 1a functions as a skin portion for flowing a high frequency current by the skin effect, and the skin thickness δ through which the high frequency current flows on the inner peripheral surface of the hollow hole 1a is equal to the outer peripheral surface of the conductor 1. It is equal to the flowing skin depth δ.
【0021】上記の構成において、導体1の外径(半
径)をr1 、中空穴1aの半径をr2、高周波電流が流
れる表皮厚さをδとしたとき、 r1 ≧r2 +2δ とするのが望ましい。In the above structure, when the outer diameter (radius) of the conductor 1 is r 1 , the radius of the hollow hole 1a is r 2 , and the skin thickness through which the high-frequency current flows is δ, r 1 ≧ r 2 + 2δ Is desirable.
【0022】上記のようにボンディングワイヤWを構成
する導体1を中空管状に形成したことによって、導体半
径r1 に比べて表皮厚さδが非常に小さい高周波域で
は、ボンディングワイヤWには、半径r1 の導体1の外
周面と、半径r2 の中空穴1aの内周面とに、表皮効果
によって高周波電流が流れる表皮部が存在することとな
る。その高周波電流が流れる表皮部の有効面積は、表皮
厚さをδとすれば従来のボンディングワイヤでは半径r
1 の導体周面に2πr1 δの有効面積しかなかったもの
が、本実施例ではその2πr1 δに加えて中空穴1aの
内周面に2πr2δの有効面積を増加させることができ
る。Since the conductor 1 forming the bonding wire W is formed in a hollow tubular shape as described above, the radius of the bonding wire W becomes larger in a high frequency range where the skin depth δ is much smaller than the conductor radius r 1. The outer skin of the conductor 1 of r 1 and the inner skin of the hollow hole 1a of radius r 2 have a skin portion through which a high frequency current flows due to the skin effect. Assuming that the skin thickness is δ, the effective area of the skin portion through which the high-frequency current flows is radius r in the conventional bonding wire.
Although the conductor peripheral surface of 1 had only an effective area of 2πr 1 δ, in the present embodiment, the effective area of 2πr 2 δ can be increased on the inner peripheral surface of the hollow hole 1a in addition to the effective area of 2πr 1 δ.
【0023】上記のように導体1を中空管状に形成して
なるボンディングワイヤWを製造する場合の製造方法等
は適宜であり、例えば押出し法等によって所定寸法の中
空管状の導体1を形成する。あるいは予め所定の寸法よ
りも大径に形成した中空管状の導体を、例えばダイスを
用いた引抜き加工等によって所定の太さに縮径加工する
こともできる。The manufacturing method and the like in the case of manufacturing the bonding wire W in which the conductor 1 is formed into a hollow tubular shape as described above are appropriate. For example, the hollow tubular conductor 1 having a predetermined size is formed by an extrusion method or the like. Alternatively, a hollow tubular conductor formed to have a diameter larger than a predetermined size in advance can be reduced in diameter to a predetermined thickness by, for example, drawing using a die.
【0024】また例えば長尺リボン状の素材板を、その
リボン幅よりも順次小さく形成した成形孔等に挿通させ
るか、もしくはロールフォーミング等によって漸次断面
円弧状に湾曲させ、その幅方向両端部を図2のように突
き合わせて1重の中空管状の導体1を形成する。あるい
は素材板を図3のように渦巻状に多重に巻いて導体1を
形成する。さらに例えば上記のような素材板を図4のよ
うに螺旋状に巻いて中空管状の導体1を形成することも
できる。Further, for example, a long ribbon-shaped material plate is inserted into a forming hole or the like formed successively smaller than the ribbon width, or is gradually curved into an arcuate cross section by roll forming or the like, and both widthwise end portions thereof are formed. As shown in FIG. 2, a single hollow tubular conductor 1 is formed by butting. Alternatively, as shown in FIG. 3, the material plate is spirally wound in multiple layers to form the conductor 1. Further, for example, the material plate as described above can be spirally wound as shown in FIG. 4 to form the hollow tubular conductor 1.
【0025】上記のような中空管状をなす導体1の中空
穴1aは、必要に応じて複数個設けてもよく、図5は導
体1内に断面円形の3つの中空穴1aを形成した例を示
す。その中空穴1aの個数や大きさ及び断面形状等は適
宜である。又その製造方法等も適宜であり、例えば前記
図1の実施例の場合と同様に押出し法や引抜き加工等に
よって製造することができる。あるいは図6のように中
空管状の導体1の周面の一部を内方に略Ω字状に一体に
連続的に屈曲形成して断面略円形の3つの中空穴1aを
形成してもよく、その製造方法としては、例えば予め中
空管状に形成した導体を一旦ほぼ偏平に潰したのち再度
中空管状に丸めることによって製造することができる。A plurality of hollow holes 1a of the conductor 1 having a hollow tubular shape as described above may be provided if necessary. FIG. 5 shows an example in which three hollow holes 1a having a circular cross section are formed in the conductor 1. Show. The number, size and sectional shape of the hollow holes 1a are appropriate. Further, the manufacturing method and the like are also appropriate, and for example, it can be manufactured by an extrusion method or a drawing process as in the case of the embodiment of FIG. Alternatively, as shown in FIG. 6, a part of the peripheral surface of the hollow tubular conductor 1 may be integrally and continuously bent inward into a substantially Ω shape to form three hollow holes 1a having a substantially circular cross section. As a manufacturing method thereof, for example, it can be manufactured by crushing a conductor formed in advance in a hollow tube into a substantially flat shape and then rolling it into a hollow tube again.
【0026】上記実施例のように導体1内に中空穴1a
を複数個設けることによって、その個数と中空穴1aの
径に応じて前記の有効面積を増大させることができる。
例えば、上記図5および図6の各実施例において、導体
1の外周面の半径をr1 、3つの中空穴1aの各半径を
r2 としたとき、導体1の外周面側に前記従来ワイヤと
同じ2πr1 δの有効面積が得られる他に、上記3つの
中空穴1aによって3×2πr2 δの有効面積を増大さ
せることが可能となる。一般に半径r2 の中空穴1aを
n個設ければ、2nπr2 δの有効面積を従来ワイヤよ
りも増加させることができるものである。A hollow hole 1a is formed in the conductor 1 as in the above embodiment.
By providing a plurality of the above, the effective area can be increased according to the number thereof and the diameter of the hollow hole 1a.
For example, in each of the embodiments shown in FIGS. 5 and 6, when the radius of the outer peripheral surface of the conductor 1 is r 1 and the radii of the three hollow holes 1 a are r 2 , the conventional wire is attached to the outer peripheral surface of the conductor 1. In addition to the same effective area of 2πr 1 δ as described above, the effective area of 3 × 2πr 2 δ can be increased by the three hollow holes 1a. Generally, if n hollow holes 1a having a radius r 2 are provided, the effective area of 2nπr 2 δ can be increased as compared with the conventional wire.
【0027】なお上記各実施例において中空穴1aを含
む導体1の表面の一部もしくは全面には、必要に応じて
エポキシ樹脂等の絶縁材を充填もしくは被覆するように
してもよい。この場合、特に前記図3や図6の実施例の
ように導体1が重なる部分が存在するものにあっては、
その重なる部分の一部もしくは全部に図7および図8に
示すように絶縁材2を介在させ、あるいは絶縁材2を介
して接着すれば、その絶縁材2に接触する導体表面の全
面を、表皮効果によって高周波電流が流れる表皮部とし
て機能させることが可能となり、前記の有効面積をさら
に増大させることができる。ただし、上記の導体1が重
なる部分の一部もしくは全部に単に隙間を形成すること
によっても上記と同等の効果を得ることができる。In each of the above embodiments, a part or the whole of the surface of the conductor 1 including the hollow hole 1a may be filled or covered with an insulating material such as an epoxy resin if necessary. In this case, particularly in the case where there is a portion where the conductor 1 overlaps as in the embodiment of FIGS. 3 and 6,
If the insulating material 2 is interposed or adhered via the insulating material 2 to a part or all of the overlapping portion as shown in FIGS. 7 and 8, the entire surface of the conductor which contacts the insulating material 2 is covered with the skin. Due to the effect, it becomes possible to function as a skin portion through which a high-frequency current flows, and the effective area can be further increased. However, the same effect as the above can be obtained by simply forming a gap in a part or all of the portion where the conductor 1 is overlapped.
【0028】また前記図4の実施例のようにリボン状の
素材板を螺旋状に巻いて中空管状の導体を形成するもの
にあっては、軸線方向に隣り合う素材板の縁部を合成樹
脂等の絶縁材で順次接合固着して中空管状に形成するこ
とができる。その場合、軸線方向に隣り合う素材板は上
記絶縁材で絶縁され、リボン状の素材板をそのままボン
ディングワイヤとして用いた場合と同等の有効面積を確
保できると共に、螺旋状にすることで外形寸法をリボン
幅よりも小さくすることが可能となり狭ピッチで使用す
ることができる。In the case of forming a hollow tubular conductor by spirally winding a ribbon-shaped material plate as in the embodiment shown in FIG. 4, the edges of the material plates adjacent in the axial direction are made of synthetic resin. It can be formed into a hollow tube by sequentially bonding and fixing with an insulating material such as. In that case, the material plates adjacent to each other in the axial direction are insulated by the above-mentioned insulating material, and an effective area equivalent to the case where the ribbon-shaped material plate is used as it is as the bonding wire can be ensured, and the external dimensions can be made by making it spiral. It can be made smaller than the ribbon width and can be used at a narrow pitch.
【0029】さらに前記の各実施例は導体1の内部に中
空穴1aを形成したが、必ずしもそのような中空穴を形
成する必要はなく、例えば図9に示すように複数枚の素
材板をエポキシ系樹脂等の絶縁材2を介して一体的に固
着(接着)するようにしてもよい。そのようにすれば、
各素材板の絶縁材2との接触面を含む外周面全面を、表
皮効果によって高周波電流が流れる表皮部として機能さ
せることができる。Further, in each of the above-mentioned embodiments, the hollow hole 1a is formed inside the conductor 1. However, it is not always necessary to form such a hollow hole. For example, as shown in FIG. Alternatively, they may be integrally fixed (adhered) via an insulating material 2 such as a system resin. If you do that,
The entire outer peripheral surface including the contact surface of each material plate with the insulating material 2 can function as a skin portion through which a high-frequency current flows due to the skin effect.
【0030】〔実験例〕前記図1の実施例において外径
が30μmφと35μmφの金よりなる断面円形の導体
1の内部にそれぞれ直径10μmφの中空穴1aを形成
した場合と、その比較例として外径および材質が同じで
従来のように中空穴1aを有しないボンディングワイヤ
を作製し、それらの抵抗値等を測定して導電特性を調べ
た。その結果を下記表1に示す。なお表中の有効面積は
計算によって求めたものであり、また抵抗Rは単位長さ
(2mm)当たりの測定値である。[Experimental Example] In the embodiment shown in FIG. 1, a conductor 1 having a circular cross-section made of gold and having an outer diameter of 30 μmφ and 35 μmφ was formed with hollow holes 1 a each having a diameter of 10 μmφ. A bonding wire having the same diameter and the same material as that of the prior art, which does not have the hollow hole 1a, was prepared, and the resistance value and the like were measured to examine the conductive property. The results are shown in Table 1 below. The effective area in the table is obtained by calculation, and the resistance R is a measured value per unit length (2 mm).
【0031】[0031]
【表1】 [Table 1]
【0032】上記の表からも明らかなように動作周波数
が、各ボンディングワイヤにおける高周波域以上の場合
には、いずれも比較例(従来品)よりも抵抗値が低くな
り、導電特性が向上することがわかった。As is clear from the above table, when the operating frequency is higher than the high frequency range of each bonding wire, the resistance value is lower than that of the comparative example (conventional product) and the conductive characteristics are improved. I understood.
【0033】[0033]
【発明の効果】以上説明したように、本発明によるボン
ディングワイヤWは、そのワイヤWを構成する導体1の
内部にも、表皮効果により高周波電流を流すための表皮
部を設けたから、高周波電流が流れる有効面積を従来の
ものよりも大きくすることが可能となり、同じ線径の従
来ワイヤに比べてより多くの電流を流すことができる。
逆に従来は導体として機能していなかったワイヤ内部に
も電流を流すことが可能となるため、同じ有効面積を確
保した上で従来のワイヤよりも外形寸法を小さくするこ
とができ、ボンディングピッチをより狭小化することが
求められている最近の半導体装置等においても充分かつ
良好に適用することが可能となる。またボンディングワ
イヤWを構成する導体1が、例えば鉄、ニッケル、コバ
ルトなどの強磁性体であるときには、導体1の透磁率μ
が、例えば金や銅などの弱磁性体に比べて極めて大きく
なるため、従来品では表皮効果による有効面積の減少は
著しいが、本発明によるボンディングワイヤでは導体が
強磁性体からなる場合には、従来品に比べ有効面積の減
少を抑制することができる等の効果もある。As described above, in the bonding wire W according to the present invention, since the skin portion for passing the high frequency current by the skin effect is also provided inside the conductor 1 forming the wire W, the high frequency current is not generated. It is possible to make the effective area to flow larger than that of the conventional one, and it is possible to flow a larger amount of current as compared with the conventional wire having the same wire diameter.
On the contrary, since it is possible to flow current inside the wire that did not function as a conductor in the past, the external dimensions can be made smaller than the conventional wire while securing the same effective area, and the bonding pitch can be reduced. The present invention can be sufficiently and satisfactorily applied to recent semiconductor devices and the like which are required to be narrowed. When the conductor 1 forming the bonding wire W is a ferromagnetic material such as iron, nickel or cobalt, the magnetic permeability μ of the conductor 1
However, since it becomes extremely larger than a weak magnetic material such as gold or copper, the effective area is significantly reduced by the skin effect in the conventional product, but in the bonding wire according to the present invention, when the conductor is made of a ferromagnetic material, It also has the effect of suppressing the reduction of the effective area compared to conventional products.
【図1】本発明によるボンディングワイヤの一実施例を
示す横断面図。FIG. 1 is a cross-sectional view showing an embodiment of a bonding wire according to the present invention.
【図2】上記実施例によるボンディングワイヤの製造方
法の一例を示す横断面図。FIG. 2 is a cross-sectional view showing an example of a method of manufacturing a bonding wire according to the above embodiment.
【図3】上記実施例によるボンディングワイヤの製造方
法の他の例を示す横断面図。FIG. 3 is a transverse cross-sectional view showing another example of the method for manufacturing the bonding wire according to the above embodiment.
【図4】上記実施例によるボンディングワイヤの製造方
法の他の例を示す横断面図。FIG. 4 is a transverse cross-sectional view showing another example of the method for manufacturing the bonding wire according to the above embodiment.
【図5】中空穴を複数個設けたボンディングワイヤの一
実施例を示す横断面図。FIG. 5 is a cross-sectional view showing an example of a bonding wire having a plurality of hollow holes.
【図6】中空穴を複数個設けたボンディングワイヤの他
の実施例を示す横断面図。FIG. 6 is a cross-sectional view showing another embodiment of a bonding wire having a plurality of hollow holes.
【図7】絶縁材を用いたボンディングワイヤの一実施例
を示す横断面図。FIG. 7 is a cross-sectional view showing an example of a bonding wire using an insulating material.
【図8】絶縁材を用いたボンディングワイヤの他の実施
例を示す横断面図。FIG. 8 is a cross-sectional view showing another embodiment of a bonding wire using an insulating material.
【図9】絶縁材を用いたボンディングワイヤの他の実施
例を示す横断面図。FIG. 9 is a cross-sectional view showing another embodiment of a bonding wire using an insulating material.
W ボンディングワイヤ 1 導体 1a 中空穴 2 絶縁材 W Bonding wire 1 Conductor 1a Hollow hole 2 Insulation material
Claims (5)
部にも、表皮効果により高周波電流を流すための表皮部
を設けたことを特徴とするボンディングワイヤ。1. A bonding wire characterized in that a skin portion for allowing a high-frequency current to flow due to a skin effect is also provided inside a conductor constituting the bonding wire.
空穴の内周面を前記表皮効果により高周波電流を流すた
めの表皮部とした請求項1記載のボンディングワイヤ。2. The bonding wire according to claim 1, wherein the conductor is formed in a hollow tubular shape, and an inner peripheral surface of the hollow hole serves as a skin portion for passing a high frequency current by the skin effect.
設けてなる請求項2記載のボンディングワイヤ。3. The bonding wire according to claim 2, wherein a plurality of hollow holes forming the skin portion are provided.
構成され、全体的断面の外周輪郭形状を略円形に形成し
てなる請求項1、2または3記載のボンディングワイ
ヤ。4. The bonding wire according to claim 1, 2 or 3, wherein the conductor is formed of a ribbon-shaped material plate and the outer peripheral contour of the entire cross section is formed into a substantially circular shape.
部に絶縁材を充填もしくは被覆してなる請求項1、2、
3または4記載のボンディングワイヤ。5. A conductor skin including the hollow hole and the material plate is filled or covered with an insulating material.
The bonding wire according to 3 or 4.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7180703A JPH098076A (en) | 1995-06-23 | 1995-06-23 | Bonding wire |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7180703A JPH098076A (en) | 1995-06-23 | 1995-06-23 | Bonding wire |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH098076A true JPH098076A (en) | 1997-01-10 |
Family
ID=16087845
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7180703A Withdrawn JPH098076A (en) | 1995-06-23 | 1995-06-23 | Bonding wire |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH098076A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1347466A2 (en) * | 2002-03-19 | 2003-09-24 | Goto Electronic Co., Ltd. | Electric wire |
JP2009538523A (en) * | 2006-05-25 | 2009-11-05 | 台灣積體電路製造股▲ふん▼有限公司 | Method and system for composite bond wires |
JP2013251101A (en) * | 2012-05-31 | 2013-12-12 | Tatsuta Electric Wire & Cable Co Ltd | Electric wire for high-frequency current |
CN111083609A (en) * | 2019-12-06 | 2020-04-28 | 歌尔股份有限公司 | Voice coil wire, voice coil and sound production device for sound production device |
US20210193546A1 (en) * | 2017-02-28 | 2021-06-24 | Mitsubishi Electric Corporation | Packaging of a semiconductor device with dual sealing materials |
-
1995
- 1995-06-23 JP JP7180703A patent/JPH098076A/en not_active Withdrawn
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1347466A2 (en) * | 2002-03-19 | 2003-09-24 | Goto Electronic Co., Ltd. | Electric wire |
JP2009538523A (en) * | 2006-05-25 | 2009-11-05 | 台灣積體電路製造股▲ふん▼有限公司 | Method and system for composite bond wires |
JP2012134534A (en) * | 2006-05-25 | 2012-07-12 | Taiwan Semiconductor Manufacturing Co Ltd | Method and system for composite bond wire |
JP2013251101A (en) * | 2012-05-31 | 2013-12-12 | Tatsuta Electric Wire & Cable Co Ltd | Electric wire for high-frequency current |
US20210193546A1 (en) * | 2017-02-28 | 2021-06-24 | Mitsubishi Electric Corporation | Packaging of a semiconductor device with dual sealing materials |
CN111083609A (en) * | 2019-12-06 | 2020-04-28 | 歌尔股份有限公司 | Voice coil wire, voice coil and sound production device for sound production device |
CN111083609B (en) * | 2019-12-06 | 2021-11-26 | 歌尔股份有限公司 | Voice coil wire, voice coil and sound production device for sound production device |
US12003939B2 (en) | 2019-12-06 | 2024-06-04 | Goertek Inc. | Voice coil wire for sound generating device, voice coil and sound generating device |
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