JPH0978237A - Production of thin film and device therefor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a thin film producing method capable of obtaining an ultra-thin film faithful to design composed of plural atoms. SOLUTION: In a magnetron sputtering device in which an outer side permanent magnet 4b and an inside permanent magnet 4c are arranged on the back side of a cathode 3 with an electromagnet 4 for controlling in-between, an inside target 6a and an outside target 6b are sputtered to the cathode 3 in such a manner that energizing to inside and outside coils 12b and 12c is controlled, and targets are selectable, inside and outside releasing atom capture rings 7a and 7b are arranged, a bias electrode 15, a thermal conducting board 13 and a heating element 14 are arranged on the back side of a substrate 5, a cooling device 16 is arranged in the vicinity, and by the formed thin film, the bias potential and substrate temp. are controlled.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film manufacturing method and an apparatus thereof, and more particularly to a thin film manufacturing method and an apparatus thereof using a magnetron sputtering method capable of highly controlling characteristics of a thin film to be produced. .

[0002]

2. Description of the Related Art As technology for forming a metal thin film on a substrate such as ceramics with the progress of electronics such as semiconductor devices, vacuum deposition, plating, thick film printing, thermal spraying,
The metal foil etching method and the sputtering method have been developed, and the sputtering method is extremely excellent as a method for obtaining a good-quality metal thin film. Particularly, the magnetron sputtering method is particularly excellent for controlling the film formation. This is already known.

The magnetron sputtering method uses direct current 2
This is an advanced version of the polar sputtering system, in which a cathode with a target made of film material and a substrate for thin film formation are placed in a vacuum chamber (sputtering chamber) (usually the window is opened in the anode. ) And the anode facing each other at a predetermined interval and introducing a discharge gas such as argon gas for glow discharge, and generating a magnetic field approximately parallel to the cathode surface by a permanent magnet to form a secondary electron binding region. Then, the target, which is the cathode, is bombarded with the discharge gas ions, and atoms and secondary electrons are emitted from the target.

Ions, electrons, and the like bound in the secondary electron bound region increase the probability of collision with discharge gas molecules, so that the amount of generated ions increases (so-called magnetron discharge).
However, the generation of sputtered atoms (atoms emitted from the target) is promoted, and the thin film formation rate and the thin film formation area can be increased. As described above, the magnetic field substantially parallel to the cathode surface has one pole (usually N pole) of the permanent magnet at the center of the cathode.
Is arranged to surround the outside of the target, and a cylindrical permanent magnet having the opposite pole to the above is arranged.

By the way, as a means for producing a metal thin film or an alloy thin film in which two or more kinds of metals are formed in layers by the magnetron sputtering method, Tsuchiya and Deep Sea are
The inventor has invented a method of controlling the erosion region of the target by generating a magnetic field in the vicinity of the cathode, which is substantially parallel to the electric field direction, by the coil. As a means for generating a magnetic field in the vicinity of the cathode, which is substantially parallel to the direction of the electric field, Japanese Patent Publication No.
The method described in Japanese Patent Publication No. 4-49516 has a coil surrounding the outer periphery of the cathode, and the energization is controlled. The method described in Japanese Patent Publication No. 4-49516 discloses that the coils are arranged concentrically. A control electromagnet that generates a magnetic pole on the end surface of the cylinder is arranged between the permanent magnets. By forming in this way, it becomes possible to perform control to limit the erosion region to the outer target region and the inner target region of the cylinder of the control electromagnet. Hereinafter, the method disclosed in these publications will be referred to as a triode magnetron sputtering method.

In the three-pole magnetron sputtering method, targets having different elements or elemental constitutions are concentrically arranged in the inner and outer regions, respectively, and the excitation current of the coil or electromagnet is controlled to produce a thin film. You can now change the characteristics.

[0007]

By the way, the resistivity (μΩ is different between the vacuum-deposited nickel-chromium alloy film and the nickel-chromium alloy film formed by the three-pole magnetron sputtering method.
-Cm) and temperature coefficient TCR (ppm / ° C). However, in order to produce a metal thin film having a higher resistivity by the three-pole magnetron sputtering method, further improvement was recognized.

That is, since the emission angle distribution of sputtered atoms follows the cosine law, sputtered atoms scatter in all directions. Therefore, when the inner and outer targets applied to the three-pole magnetron sputtering method are formed with different elemental configurations, the target is cross-contaminated by the scattered sputtered atoms and the film characteristics as designed cannot be obtained. It was found that there was a problem that the insulation sealing material was coated and the insulation was destroyed, resulting in a short circuit of the device.

Further, it has been found that when sputtering is performed while paying attention to the crystal structure of the thin film to be formed, it is necessary to independently control the sputtering rate and the substrate temperature, which are dependent factors. That is, the sputter rate depends on the discharge voltage or input power to the target and can be controlled independently. On the other hand, the substrate temperature rises due to heat radiation from the target and fast secondary electron radiation. Since the amount of heat radiation and the amount of fast secondary electron radiation are proportional to the input power, it is not possible to independently control the substrate temperature in a low temperature range of, for example, 200 ° C. or lower, unless heat radiation or cooling means is attached to the substrate. There is a problem that you cannot do it.

A heating element is installed when the substrate needs to be heated. Conventional heating elements include a heating element embedded in ceramics and fired, an insulating material such as mica and a metal foil or metal. Those that sandwich a heating element such as a wire,
Examples include those that use a sheath heating element and those that are processed into a sheet by mixing a conductive material in a heat-resistant resin such as silicone rubber. However, many seeds heating elements are used from the viewpoint of mechanical strength, life, electrical insulation, high temperature use, etc., but in order to heat them uniformly and efficiently, it is necessary to devise the arrangement pattern of the seeds heating elements. I found out that

On the other hand, in order to stack a thin film formed by the sputtering method (hereinafter referred to as a sputtered thin film) at a high density, sputtered atoms may be surface-diffused on the substrate to fill the gaps or holes in the film. Conventionally, 1) ion irradiation, so-called bias sputtering, and 2) substrate heating are known as means for causing the surface diffusion. Bias of 1)
Sputtering is a means of applying a potential to a substrate that is insulated from the anode, that is, in an electrically floating state, to give energy to the sputtered electrons that have reached the surface of the substrate. It is necessary to take the design into consideration, and if the bias potential is too high, it will be trapped in the thin film generated by sputter gas such as argon gas or cause lattice defects, and finally the generated thin film will be re-sputtered and destroyed. It turns out that there is a problem that occurs. See also 2)
The problem of heating the substrate is as described above.

The present invention has been made in view of the above problems. Mutual contamination between the inner target and the outer target, and formation of a metal thin film on the insulating surface in the sputtering apparatus, resulting in dielectric breakdown. A first problem to be solved is to provide a thin film manufacturing method and an apparatus for preventing the above problems. A second problem to be solved by the present invention is to provide a thin film manufacturing method by sputtering and an apparatus thereof for applying a heating and cooling means for proper temperature control of a substrate in order to generate a metal thin film as designed. is there.

A third object of the present invention is to provide a thin film production method by sputtering having a substrate heating means and a bias potential supply method for producing a high density laminated film, and an apparatus therefor. A fourth problem to be solved by the present invention is to provide a method for producing a chromium-nickel alloy thin film.

[0014]

The thin film manufacturing method of the present invention for achieving the above-mentioned first solution is to dispose a pair of an anode and a cathode at a predetermined interval and to arrange them on the back side of the cathode. A cylindrical outer permanent magnet surrounding the target to be placed on the cathode, and a middle permanent magnet of the opposite pole is placed in the center of the outer permanent magnet, and a cylindrical iron core and the iron core are placed between the two permanent magnets. A control electromagnet having a coil wound in the circumferential direction is arranged, an inner target is arranged on the cathode between the inner permanent magnet and the cylindrical iron core, and a cathode between the outer permanent magnet and the cylindrical iron core. In the magnetron sputtering method, in which an outer target is arranged on the outer target and the target to be sputtered can be selected by controlling the energization of the coil, a target surface is provided between the inner target and the outer target and on the outer periphery of the outer target. The release atomic capture ring made of an insulator which extends out to the anode side disposed from, is obtained so as to capture the sputtered atoms incident on the cathode side by a sputtering atoms and low angle emitted at a low emission angle.

The anode and cathode may be those conventionally used, for example, stainless steel. The material for the ring-shaped emitted atom trapping ring is not particularly limited, but it is preferable to use, for example, alumina or mica-based ceramics capable of cutting. Further, the height of the emitted atom trapping ring may be determined according to actual practice, but as a guideline, the outermost of the erosion region of the inner / outer target and the substrate, for example, on the line connecting the substrate center or the diagonal position,
The height may be such that the upper end of the emission atom trap ring is located. However, the present invention is not limited to this.

When the sputtering operation is completed, the sputtered atoms adhere to the surface of the emission atom trap ring in a thin film form. Since the emitted atom trapping ring must maintain the insulating property, when the attached thin film is a conductive substance such as a metal, high temperature oxidation treatment such as firing is performed, or when the insulation is insufficient due to the oxidation treatment. A mechanical removal method such as sandpaper can be used. Therefore, the emission atom trapping ring can be repeatedly used.

In the method for producing a chromium-nickel alloy thin film of the present invention for achieving the fourth problem, the inner and outer targets are made of chromium and nickel, respectively, and the substrate temperature is 200 ° C. or lower. The time for sputtering the target on the inner side and the target on the outer side are controlled by giving temporal order. In the thin film manufacturing apparatus for achieving the second problem to be solved, a heating element in which sheathed heaters are arranged in parallel with each other is arranged on the back surface of the substrate via a heat conduction plate. The heating element can be formed by arranging a plurality of sheath heating elements in parallel, but can also be formed by folding one sheath heating element outside the substrate. The heating element can be useful for controlling the diffusion energy of sputtered atoms incident on the substrate.

The heat conducting plate is not particularly limited except that it uses a conductor of good heat, but a ceramic insulating material such as aluminum nitride having good heat conductivity can be used. A thin film manufacturing apparatus for achieving the third problem is to dispose an electrode plate between the substrate and the heat conductive plate,
By applying a bias potential from a conductive wire connected to this electrode plate, diffusion energy can be applied to the sputtered atoms incident on the substrate to form a high density film. The material of the electrode plate for bias potential is not particularly limited, but platinum or the like can be used.

Further, the present invention can be implemented by forming the cooling device for cooling the substrate by a cooling pipe through which a cooling fluid is passed, arranging the cooling device near the substrate, and controlling the substrate temperature. The cooling pipes may be arranged alternately with the sheath heaters. The present invention prevents mutual contamination of the target and short circuit accident of the insulating portion by capturing sputtered atoms flying at a height close to the target, deposits sputtered atoms having the composition as designed on the substrate, and simultaneously collides with the substrate. By controlling the energy of the sputtered atoms by controlling the heating means of the substrate, the potential control means, and the cooling means of the anode, a thin film whose density, surface state and the like are controlled can be formed on the substrate.

To limit the film formation area on the substrate, it is possible to use a shutter having a window opened in a specific portion. The material of the shutter used is not particularly limited, but, for example, stainless steel (SUS) or the like can be used. The substrate that can be used in the present invention may be the same as the conventional one. The substrate that is usually used is not constant depending on the purpose of film formation, but when manufacturing a resistor, etc., use a high thermal conductivity electrical insulator such as ceramics such as aluminum nitride or heat resistant resin such as polyimide. In addition, the metal may be used as the substrate when the insulating layer is formed on the surface of the metal.

The thin film obtained by the method of the present invention is, for example, a heat-sensitive thin film such as a heating element for a micro heater, a resistor, a thermistor, or a thermocouple, or a thin film made of a material that senses strain, light, humidity or the like. It can be used as a sensor, a magnetic head, a magnetic material such as a magnetic disk, an electromagnetic wave shielding material, a printing thermal head for thermal recording paper, and the like.

[0022]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of a three-pole magnetron sputtering apparatus used when carrying out the present invention will be described with reference to FIGS. The three-pole magnetron sputtering apparatus shown in FIG. 1 has a vacuum container lid 1a forming a sputtering chamber 1,
A substrate holder unit 2a attached in a suspended form,
The cathode 3 arranged in the vacuum container box 1b and the magnetic field generator 4
and an inner target 6a, an outer target 6b, an inner emission atom trap ring 7a, and an outer emission atom trap ring 7b (hereinafter, the emission atom trap ring is simply referred to as 7) on the cathode 3. Then, the vacuum exhaust port 8 and the sputter gas introduction port 9 are attached to the intermediate portion 1c of the vacuum container.

The cathode 3 has a disk shape as shown in FIG. 2, and has outer peripheral permanent magnets 4b, middle permanent magnets 4c, and positioning recesses 10a, 10b, 10c for the control electromagnets 4 formed on the lower side thereof. A cathode cooling tube 3a was perforated on the inner surface of the substrate, and an inner target 6a, an inner emitted atom capturing ring 7a, an outer target 6b and an outer emitted atom capturing ring 7b were placed on the upper surface. Reference numeral 3b shown in FIG. 2 is a shield member 11 made of an insulator.
(FIG. 1) is a step for positioning, and 10a is a packing.

The substrate holder unit 2a includes an anode 2 and
It consists of a casing 2b and a holder 2c, and the anode 2 is
A disk-shaped substrate having an opening for exposing the thin film forming substrate 5 (FIG. 3) to the cathode 3 side is formed in the center part, and inside the cooling pipe 2c also serving as a holder, the anode 2 is provided through the outer wall of the cooling pipe 2c. A positive potential is applied. The casing 2b
The cooling pipe 2c has a double wall surface to prevent thermal deformation of each part of the substrate holder unit 2a and thermal deterioration of a packing (not shown) to be used, and a cooling medium such as water is circulated inside the wall. There is.

The magnetic field generating portion 4a is arranged below the cathode 3, the cathode 3 side is the S pole, the outer peripheral permanent magnet 4b is formed in a cylindrical shape, and the central portion thereof, and A rod-shaped middle permanent magnet 4c having an N pole on the third side and a control electromagnet 4 arranged between them are arranged concentrically on a magnetic plate 4d. The control electromagnet 4 has a number of windings of 36 when it is wound inside the magnetic core 12a made of a soft iron cylinder.
No. 00 inner coil 12b is arranged, and is formed on the outer side by an outer coil 12c having 1700 turns in the opposite direction.

The anode 2 is provided with an opening for mounting the substrate 5, the heat conducting plate 13 in which the substrate 5 (FIG. 3) is fitted is arranged in this portion, and the heating element 14 (FIG. 4) is provided on the back side (upper side in the figure). ) Is attached. The heat conducting plate 13 shown in this embodiment is
Was formed of aluminum nitride, which has good thermal conductivity. As shown in FIG. 3, the heat conducting plate 13 was formed with a recess 13a facing downward, and a bias electrode plate 15 made of platinum and the substrate 5 were fitted therein. A conductive wire 15b insulated from the surroundings by an insulating cylindrical insulator 15a (only one is shown) is attached to the bias electrode plate 15 so that a predetermined bias potential is applied to the substrate 5. Reference numeral 5a shown in FIG. 3 is a surface (coating surface) on which a thin film is formed.

As shown in FIG. 4, the heating element 14 has a sheath heater 14a folded back on the outside of a substrate (not shown in FIG. 4) and arranged in parallel at a predetermined interval, and both sides of a straight line portion are supported by support plates.
It is designed to be supported by 14b. FIG. 5 shows a state in which the anode 2, the heat conduction plate 13, the heating element 14 and the cooling device 16 are assembled to the substrate holder unit 2a. The cooling device 16 (FIGS. 1 and 5) arranged on the back surface of the anode 2 is made of copper or SUS316L.
An electromagnetic valve and a drainage pump (both shown in the figure) are arranged outside the system by arranging a corrosion-resistant metal pipe such as, for example, meandering on the back surface of the anode 2 to increase the contact area as much as possible. The amount of cooling water is controlled by (No.).

The cooling pipes constituting the cooling device 16 may be arranged alternately with the sheath heaters 14a and arranged on the back surface of the substrate 5 via the heat conduction plate 13. As described above, the heating element 14 and the cooling device 16 eliminate the thermal gradient of the substrate 5 to control the temperature and control the energy of incident sputter atoms, thereby forming a thin film as designed on the substrate 5. be able to.

The shutter 17 is, as shown in FIGS.
A window 17a consisting of a through hole is opened and is pivotally supported on an operating rod 17b extending out of the sputtering chamber 1. As the sputtering gas, argon gas Ar was used as in the conventional cathode sputtering method. Next, the control of the magnetic field will be described.
As shown in FIG. 6, a semi-circular arc-shaped magnetic field B that is substantially parallel to the cathode 3 is generated in a state in which an excitation current is not applied to the control electromagnet 4, and the N pole of the middle permanent magnet 4c and the S of the outer circumference permanent magnet 4b are S. A donut-shaped secondary electron binding region R is formed in the middle of the pole.

Then, when the cathode 3 side of the control electromagnet 4 is excited to the S pole, a magnetic field in the same direction as the electric field E is generated as shown in FIG. 7A, and a ring-shaped magnetic field substantially parallel to the cathode 3 is generated. B
Is generated on the inner target 6a, and a donut-shaped secondary electron binding region R is generated between the central north pole and the control electromagnet 4. Further, when the excitation current flowing in the control electromagnet 4 is switched and the polarity thereof is changed to the N pole, a magnetic field in the direction opposite to the electric field E works as shown in FIG. B is generated on the outer target 6b, and the donut-shaped secondary electron binding region R is the electromagnet 4 for control and the outer peripheral portion S.
It occurs between the poles.

Therefore, the secondary electrons emitted from the inner target 6a or the outer target 6b are confined in the secondary electron binding region R, the collision probability with the sputter gas such as argon is increased, and high density plasma is generated. An erosion region V (hatched portion in FIG. 7) is formed in which the target corresponding to the region where the secondary electrons are restrained is particularly sputtered.

By controlling the magnitude and direction of the excitation current of the control electromagnet 4 as described above, it becomes possible to control the sputtering region to either the inner target 6a or the outer target 6b. For example, by periodically changing the excitation current of the control electromagnet 4 as shown in FIG. 8 or changing the cycle at a constant rate, it is possible to give temporal order to the elements attached to the substrate 5.

Next, the operation of the emission atom trap ring 7 will be described with reference to FIGS. 9A and 9B, the constituent atoms of the inner target 6a are represented by M, and the constituent atoms of the outer target 6b are designated as N, which are each sputtered separately. In FIG. 9, sputtered atoms M and N emitted from the target 6 scatter in all directions, so sputtered atoms M and N toward the substrate 5 (indicated by a)
To another target 6 (indicated by b) to cause cross-contamination, or toward an electrically sealed portion such as the shielding member 11 (indicated by c), if the sputtered atoms are conductive, a short circuit occurs. There is a risk of accidents such as interruption of the sputtering operation due to.

On the other hand, when the inner emission atom trapping ring 7a and the outer emission atom trapping ring 7b are provided as shown in FIG. 9B, the sputtered atoms M and N indicated by b and c are inside and outside. It is possible to prevent contamination and short circuit accidents by attaching to the emitted atom trapping rings 7a and 7b. Therefore, if the height of the emission atom trap ring 7 is set to an appropriate value, a thin film as designed can be formed on the substrate.

By controlling the sputtering time by using each control means of the method of the present invention described above, the composition of the film to be formed is controlled, the control of sequentially laminating different monoatomic films, the superlattice film, the formation of the multilayer film, It is possible to precisely control the generation of a graded film that changes the component composition with respect to the stacking direction. Next, the operation of the shutter 17 will be described with reference to FIG.

The shutter shown on the left side of FIG.
Reference numeral 17 is a window in which two windows 17a for masking the central portion of the substrate 5 are opened. The symbol S shown on the right side of (A) is
As a result of sputtering by arranging a shutter 17 showing the incident direction of sputtered atoms reaching the substrate 5 on the front surface of the substrate 5, it is possible to form a film having a pattern indicated by a solid line hatched portion a in (B). .

Next, as shown in FIG. 10C, by using a shutter 17 having a window 17c opened in the central portion of the substrate 5, a film having a pattern shown in a dotted line shaded portion b in FIG. Can be generated. Therefore, for example, the inner target 6a is made of chromium Cr, and the outer target 6 is
b is made of Ni, and by controlling the energization of the heating element 14, the potential of the bias electrode 15, the amount of water flowing to the cooling device 16, etc., for example, the composition depending on the location as shown in the lower right graph of FIG. Different Cr—Ni alloy films can be formed on the substrate.

[0038]

EXAMPLE The thin film 18 of Example 1 shown in FIG. 11 was formed by the following procedure. Substrate 5: Material used: Glass substrate (Corning # 7079) 10 mm × 10 mm, thickness 0.5 mm Inner target: Cr, Outer target: Ni Sputter gas: Underlayer and coating layer: Argon gas (10 mTorr) Insulating layer: Argon gas : Oxygen (or nitrogen) gas Gas composition: (Argon: Nitrogen = 90:10) Pressure: 10 mTorr Discharge current: 100 mA for outer target (nickel) 90 mA for inner target (chromium) Substrate temperature: room temperature to 200 ° C Bias potential : -100V to 10V Under the above conditions, the control electromagnet 4 is controlled to sputter the inner target 6a, and energy is irradiated by the heating element 14 and the bias electrode 15 to utilize the surface diffusivity of chromium. As a result, the surface as shown in FIG. 11 (A) has irregularities of Å unit. 0~100Å of the underlying layer 18
a was formed.

The underlayer can exert an excellent anchoring effect on the film laminated thereon. By the way, in the conventional sputtering method, the underlying layer had to be coated with chromium to a film thickness of 100 Å or more, but the apparatus of the present invention could improve the adhesion strength to the substrate with a thinner film. Next, while irradiating the energy with the heating element 14 and the bias electrode 15, the excitation condition of the control electromagnet 4 is switched alternately, and chromium and nickel are alternately sputtered at a predetermined ratio. By synergistic action with energy irradiation,
It is possible to promote diffusion and solid solution of nickel and chromium on the substrate 5. In this way, the alloy coating layer 18b made of a dense Ni-Cr alloy thin film having an average crystal grain size of about 20 Å or less can be produced. The alloy coating layer 18b also diffuses with the base layer 18a to form a strong thin film.

When the nickel-chromium alloy thin film forms a solid solution structure, the cooling device 16 is also used for rapid cooling to cause ordered-irregular transformation, and Ni ₃
A thin film having a regular lattice structure such as Cr or Ni ₂ Cr could be formed. Next, as a sputtering gas, oxygen or nitrogen is added to the argon gas, reactive sputtering is performed, and the sputtered atoms of nickel or chromium released are subjected to a nitriding reaction or an oxidation reaction in flight to form a film,
The insulating layer 18c shown in FIG. 11B can be formed. The obtained film was a resistor having a resistivity of 3 to 8 × 10 ⁻⁴ Ωcm and a temperature coefficient of resistance of 0.3 to 0.8 × 10 ⁻⁴ / K.

In the second embodiment, as shown in FIG.
Pretreatment for forming a thin film in which an insulating layer is provided on the surface of a metal substrate 5b (for example, aluminum) having a base material having a smooth portion 19a and a concave portion 19b, which is formed by using a three-pole magnetron sputtering device Is. That is, the metal substrate 5b is heated, and the metal substrate 5b is heated by the heating element 13 (FIG. 1) in a sputtering gas in which nitrogen is mixed in argon gas, and the surface has a thickness as shown in FIG. 12 (B). A nitriding layer 20d having a thickness of about 10Å was produced. This nitriding layer is an insulating layer that is not corrosive to the metal substrate.

Next, aluminum was used as a target, and the aluminum nitride layer 20e was formed on the nitriding layer by the same sputtering. Example 3 shown in FIG.
Means that the inner target 7a is formed of two kinds of elements of components x and y, the outer target 7b is only one kind of z, and when the inner target 7a is sputtered,
The solid solution of the components x and y is formed into a film.
In this way, compounds such as alloys and semiconductors can be produced by combining two or more kinds of materials.

[0043]

As described above, the thin film manufacturing method and the apparatus thereof of the present invention have an extremely simple means of providing the emission atom trap ring around the target when the thin film is manufactured by the three-pole magnetron sputtering method.
It is possible to prevent contamination of the targets with each other and short circuit of the insulator, and to produce a high quality thin film.

Further, by providing a means for heating and cooling the substrate and a means for applying a bias potential to the contamination preventing means, a high degree of film formation control can be carried out, and a resistance which cannot be obtained by the conventional thin film manufacturing means. Can manufacture membranes,
It has become possible to broaden the application range of thin film technology.

[Brief description of drawings]

FIG. 1 is a sectional view showing an embodiment of a magnetron sputtering apparatus used in the method of the present invention.

FIG. 2 is a perspective view showing a cathode part of the device shown in FIG. 1 with a part thereof cut away.

FIG. 3 is an exploded perspective view of a substrate portion of the device shown in FIG.

FIG. 4 is a perspective view of a heating body of the apparatus shown in FIG.

5 is a partially cutaway perspective view of a substrate holder unit for holding an anode and a substrate of the apparatus shown in FIG.

6 is a cross-sectional view showing a distribution of magnetic lines of force and a secondary electron binding region due to a permanent magnet in a cathode portion of the device shown in FIG.

7A is a cross-sectional view showing a magnetic field line distribution and a secondary electron binding region when the cathode side of the control electromagnet of the device shown in FIG. 1 is controlled to be an S pole, and B is a control electron beam. It is sectional drawing which shows a magnetic force line distribution and secondary electron binding area | region when controlling the cathode side of the electromagnet to N pole.

8 is a graph showing an example of an energization control pattern of a control electromagnet of the apparatus shown in FIG.

9A is an explanatory view of the behavior of sputtered atoms in a conventional three-curve magnetron sputtering apparatus, and FIG. 9B is an explanatory view of the action of an emission atom trap ring used in the apparatus shown in FIG.

10 is an explanatory view of thin film patterning by the shutter of the device shown in FIG. 1, the left drawing of A is a bottom view of a window opened in the shutter, and the right drawing is a cross section showing a positional relationship with a substrate. In the figure, the left figure of B shows a pattern of sputtered atoms attached to the substrate, the right figure is a cross-sectional view thereof, and the figure of the left side of C is a further illustration of the patterned substrate shown in B. It is a bottom view of a shutter for performing thin film patterning of
The right figure is a cross-sectional view showing the positional relationship with the substrate, and the right figure of D shows the film pattern on the substrate finally obtained,
The upper drawing on the right is a cross-sectional view thereof, and the lower drawing thereof is a graph showing the relationship between the component of the chromium component and the position of the upper film cross section.

11 is a diagram schematically showing a cross-sectional structure of the thin film of Example 1 obtained by using the apparatus shown in FIG. 1, where A is a cross-sectional view of a base layer and B is a diffusion layer formed thereon. It is the cross-sectional view provided, C is a cross-sectional view of the entire film having an insulating layer as the outermost layer.

12 is a diagram schematically showing a cross-sectional structure of a thin film of Example 2 obtained by using the apparatus shown in FIG. 1, where A is an enlarged cross-sectional view of a surface portion of a metal substrate, and the surface is nitrided. It is the processed figure and C is a sectional view at the time of forming an aluminum nitride layer (or aluminum oxide layer) on it.

FIG. 13 is a plan view of a target attached to the apparatus shown in FIG. 1, which is implemented according to another mode.

[Explanation of symbols]

1 Sputtering chamber 2 Anode 3 Cathode 4 Control electromagnet 4a Magnetic field generator 4b Peripheral permanent magnet 4c Middle permanent magnet 5 Substrate 5a Coating surface 5b Metal substrate 6 Target 6a Inner target 6b Outer target 7 Emitted atom trapping ring 7a Inner emitted atom trap Ring 7b Outer emission atom trapping ring 8 Vacuum exhaust port 9 Sputter gas inlet 12a Magnetic core 12b Inner coil 12c Outer coil 13 Heat conduction plate 13a Recess 14 Heat generator 15 Bias electrode plate 15a Cylindrical insulator 16 Cooling device 17 Shutter 17a Window 17b Operation rod 17c Window 18 Thin film 18a Underlayer 18b Diffusion layer 18c Insulating layer 19a Smooth part 19b Recess B B Magnetic field E Electric field M Sputtering atom N Sputtering atom R Secondary electron binding region S Radiation direction

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[Procedure amendment]

[Submission date] January 22, 1996

[Procedure amendment 1]

[Document name to be amended] Statement

[Correction target item name] Brief description of drawings

[Correction method] Change

[Correction contents]

[Brief description of drawings]

FIG. 1 is a sectional view showing an embodiment of a magnetron sputtering apparatus used in the method of the present invention.

FIG. 2 is a perspective view showing a cathode part of the device shown in FIG. 1 with a part thereof cut away.

FIG. 3 is an exploded perspective view of a substrate portion of the device shown in FIG.

FIG. 4 is a perspective view of a heating body of the apparatus shown in FIG.

5 is a partially cutaway perspective view of a substrate holder unit for holding an anode and a substrate of the apparatus shown in FIG.

6 is a cross-sectional view showing a distribution of magnetic lines of force and a secondary electron binding region due to a permanent magnet in a cathode portion of the device shown in FIG.

7A is a cross-sectional view showing a magnetic field line distribution and a secondary electron binding region when the cathode side of the control electromagnet of the device shown in FIG. 1 is controlled to be an S pole, and B is a control electron beam. It is sectional drawing which shows a magnetic force line distribution and secondary electron binding area | region when controlling the cathode side of the electromagnet to N pole.

8 is a graph showing an example of an energization control pattern of a control electromagnet of the apparatus shown in FIG.

9A is an explanatory view of the behavior of sputtered atoms in a conventional three-curve magnetron sputtered layer, and FIG. 9B is an explanatory view of the action of an emission atom supplementing ring used in the device shown in FIG.

10 is an explanatory view of thin film patterning by a shutter of the apparatus shown in FIG. 1, the left drawing of A is a bottom view of a window opened in the shutter, and the right drawing is a cross section showing a positional relationship with a substrate. In the figure, the left figure of B shows the pattern of sputtered atoms adhering to the substrate, the right figure is its sectional view, and C
The left side of the figure is a bottom view of the shutter on which the patterned substrate shown in B is subjected to another thin film patterning, and the right side is a sectional view showing the positional relationship with the substrate.
The figure on the right of shows the finally obtained film pattern on the substrate, the figure on the right is its cross-sectional view, and the figure below it shows the composition and position of the chromium component of the upper film cross-section. It is a graph which shows a relationship.

FIG. 11: Example 1 obtained using the apparatus shown in FIG.
2A is a model view showing the cross-sectional structure of the thin film, A is a cross-sectional view of the underlayer, and B is a cross-sectional view of the entire film on which a diffusion layer and an insulating layer are provided as the outermost layer.

FIG. 12: Example 2 obtained using the apparatus shown in FIG.
3A is a diagram schematically showing the cross-sectional structure of the thin film of FIG. 1, A is an enlarged cross-sectional view of the surface portion of the metal substrate, and is a view of the surface being nitrided, and C is an aluminum nitride layer (or an aluminum oxide layer) thereon. 3] is a cross-sectional view in the case of forming ().

FIG. 13 shows a target attached to the apparatus shown in FIG.
It is a top view implemented by the form different from the above.

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Claims (9)

[Claims] 1. A pair of an anode and a cathode are arranged with a predetermined space therebetween, a cylindrical outer permanent magnet surrounding a target arranged on the cathode on the back side of the cathode, and a central outer portion of the outer permanent magnet. A middle permanent magnet of the pole is arranged, a cylindrical iron core and a control electromagnet wound with a coil in the circumferential direction of the iron core are arranged between the two permanent magnets, and the middle permanent magnet and the cylindrical iron core are arranged. The inner target is placed on the cathode between and the outer target is placed on the cathode between the outer permanent magnet and the cylindrical iron core, and the target to be sputtered can be selected by controlling the energization of the coil. In the magnetron sputtering method described above, an emission atom trap ring made of an insulator extending from the target surface to the anode side is arranged between the inner and outer targets and on the outer periphery of the outer target, and a low emission angle is provided. A method for manufacturing a thin film, in which the sputtered atoms emitted in step 2 and the sputtered atoms incident on the cathode side at a low angle are captured. 2. The inner and outer targets are made of chromium and nickel, respectively, and at a substrate temperature of 200 ° C. or less, the time for sputtering the inner and outer targets is controlled in a timely manner. The manufacturing method according to claim 1. 3. A pair of an anode and a cathode are arranged with a predetermined gap therebetween, a cylindrical outer permanent magnet surrounding a target arranged on the cathode on the back side of the cathode, and a central outer portion of the outer permanent magnet, which is opposite to the above. A middle permanent magnet of the pole is arranged, a cylindrical iron core and a control electromagnet wound with a coil in the circumferential direction of the iron core are arranged between the two permanent magnets, and the middle permanent magnet and the cylindrical iron core are arranged. The inner target is placed on the cathode between and the outer target is placed on the cathode between the outer permanent magnet and the cylindrical iron core, and the target to be sputtered can be selected by controlling the energization of the coil. In the magnetron sputtering apparatus described above, the emission atom trapping ring made of an insulator extending from the target surface to the anode side is arranged between the inner and outer targets and on the outer periphery of the outer target to provide a low emission. A thin film manufacturing apparatus that captures sputtered atoms emitted at an angle and sputtered atoms that enter the cathode side at a low angle. 4. The thin film manufacturing apparatus according to claim 3, wherein the emitted atom trapping ring is made of ceramics. 5. A sheathed heater is provided with heating elements arranged in parallel with each other on the back side of the substrate, a heat conduction plate is interposed between the heating element and the substrate, and the energy of sputtered atoms incident on the substrate. 3. The method according to claim 3, wherein
The thin film manufacturing apparatus described. 6. The thin-film manufacturing apparatus according to claim 5, wherein a plurality of the sheath heaters are folded back on the outside of the substrate to form the sheath heaters in parallel with each other. 7. An electrode plate is arranged between the substrate and the heat conducting plate, and a bias potential is applied from a conductive wire connected to the electrode plate to control the energy of sputtered atoms incident on the substrate. The thin film manufacturing apparatus according to claim 5. 8. The thin film manufacturing apparatus according to claim 3, wherein the cooling device for cooling the substrate is formed by a cooling pipe through which a cooling fluid is passed and is arranged in the vicinity of the substrate. 9. A shutter having a window covering at least a part of the substrate is detachably attached to the front surface of the substrate,
The thin film manufacturing apparatus according to claim 3, 4, 5, 6, 7, or 8, wherein a region where sputtered atoms adhere to the substrate can be controlled.